H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, S. Fathololoumi, M. Couillard, G. A. Botton, and Z. Mi, “p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111),” Nano Lett. 11(5), 1919–1924 (2011).
[Crossref]
[PubMed]
L. Baird, C. P. Ong, R. A. Cole, N. M. Haegel, A. A. Talin, Q. M. Li, and G. T. Wang, “Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires,” Appl. Phys. Lett. 98(13), 132104 (2011).
[Crossref]
A. Armstrong, Q. Li, Y. Lin, A. A. Talin, and G. T. Wang, “GaN nanowire surface state observed using deep level optical spectroscopy,” Appl. Phys. Lett. 96(16), 163106 (2010).
[Crossref]
E. Garnett and P. Yang, “Light trapping in silicon nanowire solar cells,” Nano Lett. 10(3), 1082–1087 (2010).
[Crossref]
[PubMed]
H. W. Lin, Y. J. Lu, H. Y. Chen, H. M. Lee, and S. Gwo, “InGaN/GaN nanorod array white light-emitting diode,” Appl. Phys. Lett. 97(7), 073101 (2010).
[Crossref]
H. Sekiguchi, K. Kishino, and A. Kikuchi, “Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate,” Appl. Phys. Lett. 96(23), 231104 (2010).
[Crossref]
C. H. Kuo, L. C. Chang, C. W. Kuo, and G. C. Chi, “Efficiency improvement of GaN-based light-emitting diode prepared on GaN nanorod template,” IEEE Photon. Technol. Lett. 22(4), 257–259 (2010).
[Crossref]
Q. M. Li and G. T. Wang, “Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires,” Appl. Phys. Lett. 97(18), 181107 (2010).
[Crossref]
P. C. Upadhya, Q. M. Li, G. T. Wang, A. J. Fischer, A. J. Taylor, and R. P. Prasankumar, “The influence of defect states on non-equilibrium carrier dynamics in GaN nanowires,” Semicond. Sci. Technol. 25(2), 024017 (2010).
[Crossref]
Q. Li, J. J. Figiel, and G. T. Wang, “Dislocation density reduction in GaN by dislocation filtering through a self-assembled monolayer of silica microspheres,” Appl. Phys. Lett. 94(23), 231105 (2009).
[Crossref]
M. A. Miller, M. H. Crawford, A. A. Allerman, K. C. Cross, M. A. Banas, R. J. Shul, J. Stevens, and K. H. A. Bogart, “Smooth and vertical facet formation for AlGaN-based deep-UV laser diodes,” J. Electron. Mater. 38(4), 533–537 (2009).
[Crossref]
C. Y. Wang, L. Y. Chen, C. P. Chen, Y. W. Cheng, M. Y. Ke, M. Y. Hsieh, H. M. Wu, L. H. Peng, and J. Huang, “GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength,” Opt. Express 16(14), 10549–10556 (2008).
[Crossref]
[PubMed]
A. A. Talin, F. Léonard, B. S. Swartzentruber, X. Wang, and S. D. Hersee, “Unusually strong space-charge-limited current in thin wires,” Phys. Rev. Lett. 101(7), 076802 (2008).
[Crossref]
[PubMed]
A. A. Talin, G. T. Wang, E. Lai, and R. J. Anderson, “Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires,” Appl. Phys. Lett. 92(9), 093105 (2008).
[Crossref]
S. Barbet, R. Aubry, M. A. di Forte-Poisson, J. C. Jacquet, D. Deresmes, T. Melin, and D. Theron, “Surface potential of n- and p-type GaN measured by Kelvin force microscopy,” Appl. Phys. Lett. 93(21), 212107 (2008).
[Crossref]
T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater. 6(12), 951–956 (2007).
[Crossref]
[PubMed]
C. H. Chiu, T. C. Lu, H. W. Huang, C. F. Lai, C. C. Kao, J. T. Chu, C. C. Yu, H. C. Kuo, S. C. Wang, C. F. Lin, and T. H. Hsueh, “Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands,” Nanotechnology 18(44), 445201 (2007).
[Crossref]
K. Kishino, A. Kikuchi, H. Sekiguchi, and S. Ishizawa, “InGaN/GaN nanocolumn LEDs emitting from blue to red,” Proc. SPIE 6473, 64730T (2007).
[Crossref]
G. T. Wang, A. A. Talin, D. J. Werder, J. R. Creighton, E. Lai, R. J. Anderson, and I. Arslan, “Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal-organic chemical vapour deposition,” Nanotechnology 17(23), 5773–5780 (2006).
[Crossref]
S. D. Hersee, X. Y. Sun, and X. Wang, “The controlled growth of GaN nanowires,” Nano Lett. 6(8), 1808–1811 (2006).
[Crossref]
[PubMed]
H. W. Li, A. H. Chin, and M. K. Sunkara, “Direction-dependent homoepitaxial growth of GaN nanowires,” Adv. Mater. (Deerfield Beach Fla.) 18(2), 216–220 (2006).
[Crossref]
Y. K. Byeun, K. S. Han, and S. C. Choi, “Influence on the growth temperature for one-dimesional GaN nanostructures by halide vapor-phase epitaxy,” J. Ceram. Process. Res. 6(3), 197–200 (2005).
D. Zhuang and J. H. Edgar, “Wet etching of GaN, AIN, and SiC: a review,” Mater. Sci. Eng. Rep. 48(1), 1–46 (2005).
[Crossref]
Y. D. Wang, S. J. Chua, S. Tripathy, M. S. Sander, P. Chen, and C. G. Fonstad, “High optical quality GaN nanopillar arrays,” Appl. Phys. Lett. 86(7), 071917 (2005).
[Crossref]
H.-M. Kim, Y.-H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004).
[Crossref]
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1-xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741–4743 (2002).
[Crossref]
S. J. Chua, H. W. Choi, J. Zhang, and P. Li, “Vacancy effects on plasma-induced damage to n-type GaN,” Phys. Rev. B 64(20), 205302 (2001).
[Crossref]
H. W. Choi, S. J. Chua, A. Raman, J. S. Pan, and A. T. S. Wee, “Plasma-induced damage to n-type GaN,” Appl. Phys. Lett. 77(12), 1795–1797 (2000).
[Crossref]
D. A. Stocker, E. F. Schubert, and J. M. Redwing, “Crystallographic wet chemical etching of GaN,” Appl. Phys. Lett. 73(18), 2654–2656 (1998).
[Crossref]
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1-xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741–4743 (2002).
[Crossref]
M. A. Miller, M. H. Crawford, A. A. Allerman, K. C. Cross, M. A. Banas, R. J. Shul, J. Stevens, and K. H. A. Bogart, “Smooth and vertical facet formation for AlGaN-based deep-UV laser diodes,” J. Electron. Mater. 38(4), 533–537 (2009).
[Crossref]
T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater. 6(12), 951–956 (2007).
[Crossref]
[PubMed]
A. A. Talin, G. T. Wang, E. Lai, and R. J. Anderson, “Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires,” Appl. Phys. Lett. 92(9), 093105 (2008).
[Crossref]
G. T. Wang, A. A. Talin, D. J. Werder, J. R. Creighton, E. Lai, R. J. Anderson, and I. Arslan, “Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal-organic chemical vapour deposition,” Nanotechnology 17(23), 5773–5780 (2006).
[Crossref]
A. Armstrong, Q. Li, Y. Lin, A. A. Talin, and G. T. Wang, “GaN nanowire surface state observed using deep level optical spectroscopy,” Appl. Phys. Lett. 96(16), 163106 (2010).
[Crossref]
G. T. Wang, A. A. Talin, D. J. Werder, J. R. Creighton, E. Lai, R. J. Anderson, and I. Arslan, “Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal-organic chemical vapour deposition,” Nanotechnology 17(23), 5773–5780 (2006).
[Crossref]
S. Barbet, R. Aubry, M. A. di Forte-Poisson, J. C. Jacquet, D. Deresmes, T. Melin, and D. Theron, “Surface potential of n- and p-type GaN measured by Kelvin force microscopy,” Appl. Phys. Lett. 93(21), 212107 (2008).
[Crossref]
L. Baird, C. P. Ong, R. A. Cole, N. M. Haegel, A. A. Talin, Q. M. Li, and G. T. Wang, “Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires,” Appl. Phys. Lett. 98(13), 132104 (2011).
[Crossref]
M. A. Miller, M. H. Crawford, A. A. Allerman, K. C. Cross, M. A. Banas, R. J. Shul, J. Stevens, and K. H. A. Bogart, “Smooth and vertical facet formation for AlGaN-based deep-UV laser diodes,” J. Electron. Mater. 38(4), 533–537 (2009).
[Crossref]
S. Barbet, R. Aubry, M. A. di Forte-Poisson, J. C. Jacquet, D. Deresmes, T. Melin, and D. Theron, “Surface potential of n- and p-type GaN measured by Kelvin force microscopy,” Appl. Phys. Lett. 93(21), 212107 (2008).
[Crossref]
M. A. Miller, M. H. Crawford, A. A. Allerman, K. C. Cross, M. A. Banas, R. J. Shul, J. Stevens, and K. H. A. Bogart, “Smooth and vertical facet formation for AlGaN-based deep-UV laser diodes,” J. Electron. Mater. 38(4), 533–537 (2009).
[Crossref]
H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, S. Fathololoumi, M. Couillard, G. A. Botton, and Z. Mi, “p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111),” Nano Lett. 11(5), 1919–1924 (2011).
[Crossref]
[PubMed]
Y. K. Byeun, K. S. Han, and S. C. Choi, “Influence on the growth temperature for one-dimesional GaN nanostructures by halide vapor-phase epitaxy,” J. Ceram. Process. Res. 6(3), 197–200 (2005).
C. H. Kuo, L. C. Chang, C. W. Kuo, and G. C. Chi, “Efficiency improvement of GaN-based light-emitting diode prepared on GaN nanorod template,” IEEE Photon. Technol. Lett. 22(4), 257–259 (2010).
[Crossref]
C. Y. Wang, L. Y. Chen, C. P. Chen, Y. W. Cheng, M. Y. Ke, M. Y. Hsieh, H. M. Wu, L. H. Peng, and J. Huang, “GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength,” Opt. Express 16(14), 10549–10556 (2008).
[Crossref]
[PubMed]
H. W. Lin, Y. J. Lu, H. Y. Chen, H. M. Lee, and S. Gwo, “InGaN/GaN nanorod array white light-emitting diode,” Appl. Phys. Lett. 97(7), 073101 (2010).
[Crossref]
C. Y. Wang, L. Y. Chen, C. P. Chen, Y. W. Cheng, M. Y. Ke, M. Y. Hsieh, H. M. Wu, L. H. Peng, and J. Huang, “GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength,” Opt. Express 16(14), 10549–10556 (2008).
[Crossref]
[PubMed]
Y. D. Wang, S. J. Chua, S. Tripathy, M. S. Sander, P. Chen, and C. G. Fonstad, “High optical quality GaN nanopillar arrays,” Appl. Phys. Lett. 86(7), 071917 (2005).
[Crossref]
C. Y. Wang, L. Y. Chen, C. P. Chen, Y. W. Cheng, M. Y. Ke, M. Y. Hsieh, H. M. Wu, L. H. Peng, and J. Huang, “GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength,” Opt. Express 16(14), 10549–10556 (2008).
[Crossref]
[PubMed]
C. H. Kuo, L. C. Chang, C. W. Kuo, and G. C. Chi, “Efficiency improvement of GaN-based light-emitting diode prepared on GaN nanorod template,” IEEE Photon. Technol. Lett. 22(4), 257–259 (2010).
[Crossref]
H. W. Li, A. H. Chin, and M. K. Sunkara, “Direction-dependent homoepitaxial growth of GaN nanowires,” Adv. Mater. (Deerfield Beach Fla.) 18(2), 216–220 (2006).
[Crossref]
C. H. Chiu, T. C. Lu, H. W. Huang, C. F. Lai, C. C. Kao, J. T. Chu, C. C. Yu, H. C. Kuo, S. C. Wang, C. F. Lin, and T. H. Hsueh, “Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands,” Nanotechnology 18(44), 445201 (2007).
[Crossref]
H.-M. Kim, Y.-H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004).
[Crossref]
S. J. Chua, H. W. Choi, J. Zhang, and P. Li, “Vacancy effects on plasma-induced damage to n-type GaN,” Phys. Rev. B 64(20), 205302 (2001).
[Crossref]
H. W. Choi, S. J. Chua, A. Raman, J. S. Pan, and A. T. S. Wee, “Plasma-induced damage to n-type GaN,” Appl. Phys. Lett. 77(12), 1795–1797 (2000).
[Crossref]
Y. K. Byeun, K. S. Han, and S. C. Choi, “Influence on the growth temperature for one-dimesional GaN nanostructures by halide vapor-phase epitaxy,” J. Ceram. Process. Res. 6(3), 197–200 (2005).
C. H. Chiu, T. C. Lu, H. W. Huang, C. F. Lai, C. C. Kao, J. T. Chu, C. C. Yu, H. C. Kuo, S. C. Wang, C. F. Lin, and T. H. Hsueh, “Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands,” Nanotechnology 18(44), 445201 (2007).
[Crossref]
Y. D. Wang, S. J. Chua, S. Tripathy, M. S. Sander, P. Chen, and C. G. Fonstad, “High optical quality GaN nanopillar arrays,” Appl. Phys. Lett. 86(7), 071917 (2005).
[Crossref]
S. J. Chua, H. W. Choi, J. Zhang, and P. Li, “Vacancy effects on plasma-induced damage to n-type GaN,” Phys. Rev. B 64(20), 205302 (2001).
[Crossref]
H. W. Choi, S. J. Chua, A. Raman, J. S. Pan, and A. T. S. Wee, “Plasma-induced damage to n-type GaN,” Appl. Phys. Lett. 77(12), 1795–1797 (2000).
[Crossref]
H.-M. Kim, Y.-H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004).
[Crossref]
L. Baird, C. P. Ong, R. A. Cole, N. M. Haegel, A. A. Talin, Q. M. Li, and G. T. Wang, “Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires,” Appl. Phys. Lett. 98(13), 132104 (2011).
[Crossref]
H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, S. Fathololoumi, M. Couillard, G. A. Botton, and Z. Mi, “p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111),” Nano Lett. 11(5), 1919–1924 (2011).
[Crossref]
[PubMed]
M. A. Miller, M. H. Crawford, A. A. Allerman, K. C. Cross, M. A. Banas, R. J. Shul, J. Stevens, and K. H. A. Bogart, “Smooth and vertical facet formation for AlGaN-based deep-UV laser diodes,” J. Electron. Mater. 38(4), 533–537 (2009).
[Crossref]
G. T. Wang, A. A. Talin, D. J. Werder, J. R. Creighton, E. Lai, R. J. Anderson, and I. Arslan, “Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal-organic chemical vapour deposition,” Nanotechnology 17(23), 5773–5780 (2006).
[Crossref]
M. A. Miller, M. H. Crawford, A. A. Allerman, K. C. Cross, M. A. Banas, R. J. Shul, J. Stevens, and K. H. A. Bogart, “Smooth and vertical facet formation for AlGaN-based deep-UV laser diodes,” J. Electron. Mater. 38(4), 533–537 (2009).
[Crossref]
H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, S. Fathololoumi, M. Couillard, G. A. Botton, and Z. Mi, “p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111),” Nano Lett. 11(5), 1919–1924 (2011).
[Crossref]
[PubMed]
S. Barbet, R. Aubry, M. A. di Forte-Poisson, J. C. Jacquet, D. Deresmes, T. Melin, and D. Theron, “Surface potential of n- and p-type GaN measured by Kelvin force microscopy,” Appl. Phys. Lett. 93(21), 212107 (2008).
[Crossref]
S. Barbet, R. Aubry, M. A. di Forte-Poisson, J. C. Jacquet, D. Deresmes, T. Melin, and D. Theron, “Surface potential of n- and p-type GaN measured by Kelvin force microscopy,” Appl. Phys. Lett. 93(21), 212107 (2008).
[Crossref]
D. Zhuang and J. H. Edgar, “Wet etching of GaN, AIN, and SiC: a review,” Mater. Sci. Eng. Rep. 48(1), 1–46 (2005).
[Crossref]
H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, S. Fathololoumi, M. Couillard, G. A. Botton, and Z. Mi, “p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111),” Nano Lett. 11(5), 1919–1924 (2011).
[Crossref]
[PubMed]
Q. Li, J. J. Figiel, and G. T. Wang, “Dislocation density reduction in GaN by dislocation filtering through a self-assembled monolayer of silica microspheres,” Appl. Phys. Lett. 94(23), 231105 (2009).
[Crossref]
P. C. Upadhya, Q. M. Li, G. T. Wang, A. J. Fischer, A. J. Taylor, and R. P. Prasankumar, “The influence of defect states on non-equilibrium carrier dynamics in GaN nanowires,” Semicond. Sci. Technol. 25(2), 024017 (2010).
[Crossref]
Y. D. Wang, S. J. Chua, S. Tripathy, M. S. Sander, P. Chen, and C. G. Fonstad, “High optical quality GaN nanopillar arrays,” Appl. Phys. Lett. 86(7), 071917 (2005).
[Crossref]
E. Garnett and P. Yang, “Light trapping in silicon nanowire solar cells,” Nano Lett. 10(3), 1082–1087 (2010).
[Crossref]
[PubMed]
H. W. Lin, Y. J. Lu, H. Y. Chen, H. M. Lee, and S. Gwo, “InGaN/GaN nanorod array white light-emitting diode,” Appl. Phys. Lett. 97(7), 073101 (2010).
[Crossref]
L. Baird, C. P. Ong, R. A. Cole, N. M. Haegel, A. A. Talin, Q. M. Li, and G. T. Wang, “Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires,” Appl. Phys. Lett. 98(13), 132104 (2011).
[Crossref]
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1-xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741–4743 (2002).
[Crossref]
Y. K. Byeun, K. S. Han, and S. C. Choi, “Influence on the growth temperature for one-dimesional GaN nanostructures by halide vapor-phase epitaxy,” J. Ceram. Process. Res. 6(3), 197–200 (2005).
H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, S. Fathololoumi, M. Couillard, G. A. Botton, and Z. Mi, “p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111),” Nano Lett. 11(5), 1919–1924 (2011).
[Crossref]
[PubMed]
A. A. Talin, F. Léonard, B. S. Swartzentruber, X. Wang, and S. D. Hersee, “Unusually strong space-charge-limited current in thin wires,” Phys. Rev. Lett. 101(7), 076802 (2008).
[Crossref]
[PubMed]
S. D. Hersee, X. Y. Sun, and X. Wang, “The controlled growth of GaN nanowires,” Nano Lett. 6(8), 1808–1811 (2006).
[Crossref]
[PubMed]
C. Y. Wang, L. Y. Chen, C. P. Chen, Y. W. Cheng, M. Y. Ke, M. Y. Hsieh, H. M. Wu, L. H. Peng, and J. Huang, “GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength,” Opt. Express 16(14), 10549–10556 (2008).
[Crossref]
[PubMed]
C. H. Chiu, T. C. Lu, H. W. Huang, C. F. Lai, C. C. Kao, J. T. Chu, C. C. Yu, H. C. Kuo, S. C. Wang, C. F. Lin, and T. H. Hsueh, “Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands,” Nanotechnology 18(44), 445201 (2007).
[Crossref]
C. H. Chiu, T. C. Lu, H. W. Huang, C. F. Lai, C. C. Kao, J. T. Chu, C. C. Yu, H. C. Kuo, S. C. Wang, C. F. Lin, and T. H. Hsueh, “Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands,” Nanotechnology 18(44), 445201 (2007).
[Crossref]
C. Y. Wang, L. Y. Chen, C. P. Chen, Y. W. Cheng, M. Y. Ke, M. Y. Hsieh, H. M. Wu, L. H. Peng, and J. Huang, “GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength,” Opt. Express 16(14), 10549–10556 (2008).
[Crossref]
[PubMed]
K. Kishino, A. Kikuchi, H. Sekiguchi, and S. Ishizawa, “InGaN/GaN nanocolumn LEDs emitting from blue to red,” Proc. SPIE 6473, 64730T (2007).
[Crossref]
S. Barbet, R. Aubry, M. A. di Forte-Poisson, J. C. Jacquet, D. Deresmes, T. Melin, and D. Theron, “Surface potential of n- and p-type GaN measured by Kelvin force microscopy,” Appl. Phys. Lett. 93(21), 212107 (2008).
[Crossref]
H.-M. Kim, Y.-H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004).
[Crossref]
C. H. Chiu, T. C. Lu, H. W. Huang, C. F. Lai, C. C. Kao, J. T. Chu, C. C. Yu, H. C. Kuo, S. C. Wang, C. F. Lin, and T. H. Hsueh, “Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands,” Nanotechnology 18(44), 445201 (2007).
[Crossref]
C. Y. Wang, L. Y. Chen, C. P. Chen, Y. W. Cheng, M. Y. Ke, M. Y. Hsieh, H. M. Wu, L. H. Peng, and J. Huang, “GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength,” Opt. Express 16(14), 10549–10556 (2008).
[Crossref]
[PubMed]
H. Sekiguchi, K. Kishino, and A. Kikuchi, “Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate,” Appl. Phys. Lett. 96(23), 231104 (2010).
[Crossref]
K. Kishino, A. Kikuchi, H. Sekiguchi, and S. Ishizawa, “InGaN/GaN nanocolumn LEDs emitting from blue to red,” Proc. SPIE 6473, 64730T (2007).
[Crossref]
H.-M. Kim, Y.-H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004).
[Crossref]
H.-M. Kim, Y.-H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004).
[Crossref]
H.-M. Kim, Y.-H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004).
[Crossref]
H. Sekiguchi, K. Kishino, and A. Kikuchi, “Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate,” Appl. Phys. Lett. 96(23), 231104 (2010).
[Crossref]
K. Kishino, A. Kikuchi, H. Sekiguchi, and S. Ishizawa, “InGaN/GaN nanocolumn LEDs emitting from blue to red,” Proc. SPIE 6473, 64730T (2007).
[Crossref]
C. H. Kuo, L. C. Chang, C. W. Kuo, and G. C. Chi, “Efficiency improvement of GaN-based light-emitting diode prepared on GaN nanorod template,” IEEE Photon. Technol. Lett. 22(4), 257–259 (2010).
[Crossref]
C. H. Kuo, L. C. Chang, C. W. Kuo, and G. C. Chi, “Efficiency improvement of GaN-based light-emitting diode prepared on GaN nanorod template,” IEEE Photon. Technol. Lett. 22(4), 257–259 (2010).
[Crossref]
C. H. Chiu, T. C. Lu, H. W. Huang, C. F. Lai, C. C. Kao, J. T. Chu, C. C. Yu, H. C. Kuo, S. C. Wang, C. F. Lin, and T. H. Hsueh, “Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands,” Nanotechnology 18(44), 445201 (2007).
[Crossref]
T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater. 6(12), 951–956 (2007).
[Crossref]
[PubMed]
C. H. Chiu, T. C. Lu, H. W. Huang, C. F. Lai, C. C. Kao, J. T. Chu, C. C. Yu, H. C. Kuo, S. C. Wang, C. F. Lin, and T. H. Hsueh, “Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands,” Nanotechnology 18(44), 445201 (2007).
[Crossref]
A. A. Talin, G. T. Wang, E. Lai, and R. J. Anderson, “Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires,” Appl. Phys. Lett. 92(9), 093105 (2008).
[Crossref]
G. T. Wang, A. A. Talin, D. J. Werder, J. R. Creighton, E. Lai, R. J. Anderson, and I. Arslan, “Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal-organic chemical vapour deposition,” Nanotechnology 17(23), 5773–5780 (2006).
[Crossref]
H.-M. Kim, Y.-H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004).
[Crossref]
H. W. Lin, Y. J. Lu, H. Y. Chen, H. M. Lee, and S. Gwo, “InGaN/GaN nanorod array white light-emitting diode,” Appl. Phys. Lett. 97(7), 073101 (2010).
[Crossref]
A. A. Talin, F. Léonard, B. S. Swartzentruber, X. Wang, and S. D. Hersee, “Unusually strong space-charge-limited current in thin wires,” Phys. Rev. Lett. 101(7), 076802 (2008).
[Crossref]
[PubMed]
H. W. Li, A. H. Chin, and M. K. Sunkara, “Direction-dependent homoepitaxial growth of GaN nanowires,” Adv. Mater. (Deerfield Beach Fla.) 18(2), 216–220 (2006).
[Crossref]
S. J. Chua, H. W. Choi, J. Zhang, and P. Li, “Vacancy effects on plasma-induced damage to n-type GaN,” Phys. Rev. B 64(20), 205302 (2001).
[Crossref]
A. Armstrong, Q. Li, Y. Lin, A. A. Talin, and G. T. Wang, “GaN nanowire surface state observed using deep level optical spectroscopy,” Appl. Phys. Lett. 96(16), 163106 (2010).
[Crossref]
Q. Li, J. J. Figiel, and G. T. Wang, “Dislocation density reduction in GaN by dislocation filtering through a self-assembled monolayer of silica microspheres,” Appl. Phys. Lett. 94(23), 231105 (2009).
[Crossref]
L. Baird, C. P. Ong, R. A. Cole, N. M. Haegel, A. A. Talin, Q. M. Li, and G. T. Wang, “Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires,” Appl. Phys. Lett. 98(13), 132104 (2011).
[Crossref]
Q. M. Li and G. T. Wang, “Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires,” Appl. Phys. Lett. 97(18), 181107 (2010).
[Crossref]
P. C. Upadhya, Q. M. Li, G. T. Wang, A. J. Fischer, A. J. Taylor, and R. P. Prasankumar, “The influence of defect states on non-equilibrium carrier dynamics in GaN nanowires,” Semicond. Sci. Technol. 25(2), 024017 (2010).
[Crossref]
C. H. Chiu, T. C. Lu, H. W. Huang, C. F. Lai, C. C. Kao, J. T. Chu, C. C. Yu, H. C. Kuo, S. C. Wang, C. F. Lin, and T. H. Hsueh, “Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands,” Nanotechnology 18(44), 445201 (2007).
[Crossref]
H. W. Lin, Y. J. Lu, H. Y. Chen, H. M. Lee, and S. Gwo, “InGaN/GaN nanorod array white light-emitting diode,” Appl. Phys. Lett. 97(7), 073101 (2010).
[Crossref]
A. Armstrong, Q. Li, Y. Lin, A. A. Talin, and G. T. Wang, “GaN nanowire surface state observed using deep level optical spectroscopy,” Appl. Phys. Lett. 96(16), 163106 (2010).
[Crossref]
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1-xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741–4743 (2002).
[Crossref]
C. H. Chiu, T. C. Lu, H. W. Huang, C. F. Lai, C. C. Kao, J. T. Chu, C. C. Yu, H. C. Kuo, S. C. Wang, C. F. Lin, and T. H. Hsueh, “Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands,” Nanotechnology 18(44), 445201 (2007).
[Crossref]
H. W. Lin, Y. J. Lu, H. Y. Chen, H. M. Lee, and S. Gwo, “InGaN/GaN nanorod array white light-emitting diode,” Appl. Phys. Lett. 97(7), 073101 (2010).
[Crossref]
S. Barbet, R. Aubry, M. A. di Forte-Poisson, J. C. Jacquet, D. Deresmes, T. Melin, and D. Theron, “Surface potential of n- and p-type GaN measured by Kelvin force microscopy,” Appl. Phys. Lett. 93(21), 212107 (2008).
[Crossref]
H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, S. Fathololoumi, M. Couillard, G. A. Botton, and Z. Mi, “p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111),” Nano Lett. 11(5), 1919–1924 (2011).
[Crossref]
[PubMed]
M. A. Miller, M. H. Crawford, A. A. Allerman, K. C. Cross, M. A. Banas, R. J. Shul, J. Stevens, and K. H. A. Bogart, “Smooth and vertical facet formation for AlGaN-based deep-UV laser diodes,” J. Electron. Mater. 38(4), 533–537 (2009).
[Crossref]
H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, S. Fathololoumi, M. Couillard, G. A. Botton, and Z. Mi, “p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111),” Nano Lett. 11(5), 1919–1924 (2011).
[Crossref]
[PubMed]
L. Baird, C. P. Ong, R. A. Cole, N. M. Haegel, A. A. Talin, Q. M. Li, and G. T. Wang, “Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires,” Appl. Phys. Lett. 98(13), 132104 (2011).
[Crossref]
H. W. Choi, S. J. Chua, A. Raman, J. S. Pan, and A. T. S. Wee, “Plasma-induced damage to n-type GaN,” Appl. Phys. Lett. 77(12), 1795–1797 (2000).
[Crossref]
C. Y. Wang, L. Y. Chen, C. P. Chen, Y. W. Cheng, M. Y. Ke, M. Y. Hsieh, H. M. Wu, L. H. Peng, and J. Huang, “GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength,” Opt. Express 16(14), 10549–10556 (2008).
[Crossref]
[PubMed]
P. C. Upadhya, Q. M. Li, G. T. Wang, A. J. Fischer, A. J. Taylor, and R. P. Prasankumar, “The influence of defect states on non-equilibrium carrier dynamics in GaN nanowires,” Semicond. Sci. Technol. 25(2), 024017 (2010).
[Crossref]
H. W. Choi, S. J. Chua, A. Raman, J. S. Pan, and A. T. S. Wee, “Plasma-induced damage to n-type GaN,” Appl. Phys. Lett. 77(12), 1795–1797 (2000).
[Crossref]
D. A. Stocker, E. F. Schubert, and J. M. Redwing, “Crystallographic wet chemical etching of GaN,” Appl. Phys. Lett. 73(18), 2654–2656 (1998).
[Crossref]
H.-M. Kim, Y.-H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004).
[Crossref]
Y. D. Wang, S. J. Chua, S. Tripathy, M. S. Sander, P. Chen, and C. G. Fonstad, “High optical quality GaN nanopillar arrays,” Appl. Phys. Lett. 86(7), 071917 (2005).
[Crossref]
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1-xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741–4743 (2002).
[Crossref]
D. A. Stocker, E. F. Schubert, and J. M. Redwing, “Crystallographic wet chemical etching of GaN,” Appl. Phys. Lett. 73(18), 2654–2656 (1998).
[Crossref]
H. Sekiguchi, K. Kishino, and A. Kikuchi, “Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate,” Appl. Phys. Lett. 96(23), 231104 (2010).
[Crossref]
K. Kishino, A. Kikuchi, H. Sekiguchi, and S. Ishizawa, “InGaN/GaN nanocolumn LEDs emitting from blue to red,” Proc. SPIE 6473, 64730T (2007).
[Crossref]
M. A. Miller, M. H. Crawford, A. A. Allerman, K. C. Cross, M. A. Banas, R. J. Shul, J. Stevens, and K. H. A. Bogart, “Smooth and vertical facet formation for AlGaN-based deep-UV laser diodes,” J. Electron. Mater. 38(4), 533–537 (2009).
[Crossref]
M. A. Miller, M. H. Crawford, A. A. Allerman, K. C. Cross, M. A. Banas, R. J. Shul, J. Stevens, and K. H. A. Bogart, “Smooth and vertical facet formation for AlGaN-based deep-UV laser diodes,” J. Electron. Mater. 38(4), 533–537 (2009).
[Crossref]
D. A. Stocker, E. F. Schubert, and J. M. Redwing, “Crystallographic wet chemical etching of GaN,” Appl. Phys. Lett. 73(18), 2654–2656 (1998).
[Crossref]
S. D. Hersee, X. Y. Sun, and X. Wang, “The controlled growth of GaN nanowires,” Nano Lett. 6(8), 1808–1811 (2006).
[Crossref]
[PubMed]
H. W. Li, A. H. Chin, and M. K. Sunkara, “Direction-dependent homoepitaxial growth of GaN nanowires,” Adv. Mater. (Deerfield Beach Fla.) 18(2), 216–220 (2006).
[Crossref]
A. A. Talin, F. Léonard, B. S. Swartzentruber, X. Wang, and S. D. Hersee, “Unusually strong space-charge-limited current in thin wires,” Phys. Rev. Lett. 101(7), 076802 (2008).
[Crossref]
[PubMed]
L. Baird, C. P. Ong, R. A. Cole, N. M. Haegel, A. A. Talin, Q. M. Li, and G. T. Wang, “Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires,” Appl. Phys. Lett. 98(13), 132104 (2011).
[Crossref]
A. Armstrong, Q. Li, Y. Lin, A. A. Talin, and G. T. Wang, “GaN nanowire surface state observed using deep level optical spectroscopy,” Appl. Phys. Lett. 96(16), 163106 (2010).
[Crossref]
A. A. Talin, G. T. Wang, E. Lai, and R. J. Anderson, “Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires,” Appl. Phys. Lett. 92(9), 093105 (2008).
[Crossref]
A. A. Talin, F. Léonard, B. S. Swartzentruber, X. Wang, and S. D. Hersee, “Unusually strong space-charge-limited current in thin wires,” Phys. Rev. Lett. 101(7), 076802 (2008).
[Crossref]
[PubMed]
G. T. Wang, A. A. Talin, D. J. Werder, J. R. Creighton, E. Lai, R. J. Anderson, and I. Arslan, “Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal-organic chemical vapour deposition,” Nanotechnology 17(23), 5773–5780 (2006).
[Crossref]
P. C. Upadhya, Q. M. Li, G. T. Wang, A. J. Fischer, A. J. Taylor, and R. P. Prasankumar, “The influence of defect states on non-equilibrium carrier dynamics in GaN nanowires,” Semicond. Sci. Technol. 25(2), 024017 (2010).
[Crossref]
S. Barbet, R. Aubry, M. A. di Forte-Poisson, J. C. Jacquet, D. Deresmes, T. Melin, and D. Theron, “Surface potential of n- and p-type GaN measured by Kelvin force microscopy,” Appl. Phys. Lett. 93(21), 212107 (2008).
[Crossref]
Y. D. Wang, S. J. Chua, S. Tripathy, M. S. Sander, P. Chen, and C. G. Fonstad, “High optical quality GaN nanopillar arrays,” Appl. Phys. Lett. 86(7), 071917 (2005).
[Crossref]
T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater. 6(12), 951–956 (2007).
[Crossref]
[PubMed]
P. C. Upadhya, Q. M. Li, G. T. Wang, A. J. Fischer, A. J. Taylor, and R. P. Prasankumar, “The influence of defect states on non-equilibrium carrier dynamics in GaN nanowires,” Semicond. Sci. Technol. 25(2), 024017 (2010).
[Crossref]
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1-xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741–4743 (2002).
[Crossref]
C. Y. Wang, L. Y. Chen, C. P. Chen, Y. W. Cheng, M. Y. Ke, M. Y. Hsieh, H. M. Wu, L. H. Peng, and J. Huang, “GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength,” Opt. Express 16(14), 10549–10556 (2008).
[Crossref]
[PubMed]
L. Baird, C. P. Ong, R. A. Cole, N. M. Haegel, A. A. Talin, Q. M. Li, and G. T. Wang, “Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires,” Appl. Phys. Lett. 98(13), 132104 (2011).
[Crossref]
Q. M. Li and G. T. Wang, “Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires,” Appl. Phys. Lett. 97(18), 181107 (2010).
[Crossref]
P. C. Upadhya, Q. M. Li, G. T. Wang, A. J. Fischer, A. J. Taylor, and R. P. Prasankumar, “The influence of defect states on non-equilibrium carrier dynamics in GaN nanowires,” Semicond. Sci. Technol. 25(2), 024017 (2010).
[Crossref]
A. Armstrong, Q. Li, Y. Lin, A. A. Talin, and G. T. Wang, “GaN nanowire surface state observed using deep level optical spectroscopy,” Appl. Phys. Lett. 96(16), 163106 (2010).
[Crossref]
Q. Li, J. J. Figiel, and G. T. Wang, “Dislocation density reduction in GaN by dislocation filtering through a self-assembled monolayer of silica microspheres,” Appl. Phys. Lett. 94(23), 231105 (2009).
[Crossref]
A. A. Talin, G. T. Wang, E. Lai, and R. J. Anderson, “Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires,” Appl. Phys. Lett. 92(9), 093105 (2008).
[Crossref]
G. T. Wang, A. A. Talin, D. J. Werder, J. R. Creighton, E. Lai, R. J. Anderson, and I. Arslan, “Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal-organic chemical vapour deposition,” Nanotechnology 17(23), 5773–5780 (2006).
[Crossref]
C. H. Chiu, T. C. Lu, H. W. Huang, C. F. Lai, C. C. Kao, J. T. Chu, C. C. Yu, H. C. Kuo, S. C. Wang, C. F. Lin, and T. H. Hsueh, “Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands,” Nanotechnology 18(44), 445201 (2007).
[Crossref]
A. A. Talin, F. Léonard, B. S. Swartzentruber, X. Wang, and S. D. Hersee, “Unusually strong space-charge-limited current in thin wires,” Phys. Rev. Lett. 101(7), 076802 (2008).
[Crossref]
[PubMed]
S. D. Hersee, X. Y. Sun, and X. Wang, “The controlled growth of GaN nanowires,” Nano Lett. 6(8), 1808–1811 (2006).
[Crossref]
[PubMed]
Y. D. Wang, S. J. Chua, S. Tripathy, M. S. Sander, P. Chen, and C. G. Fonstad, “High optical quality GaN nanopillar arrays,” Appl. Phys. Lett. 86(7), 071917 (2005).
[Crossref]
H. W. Choi, S. J. Chua, A. Raman, J. S. Pan, and A. T. S. Wee, “Plasma-induced damage to n-type GaN,” Appl. Phys. Lett. 77(12), 1795–1797 (2000).
[Crossref]
G. T. Wang, A. A. Talin, D. J. Werder, J. R. Creighton, E. Lai, R. J. Anderson, and I. Arslan, “Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal-organic chemical vapour deposition,” Nanotechnology 17(23), 5773–5780 (2006).
[Crossref]
C. Y. Wang, L. Y. Chen, C. P. Chen, Y. W. Cheng, M. Y. Ke, M. Y. Hsieh, H. M. Wu, L. H. Peng, and J. Huang, “GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength,” Opt. Express 16(14), 10549–10556 (2008).
[Crossref]
[PubMed]
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1-xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741–4743 (2002).
[Crossref]
E. Garnett and P. Yang, “Light trapping in silicon nanowire solar cells,” Nano Lett. 10(3), 1082–1087 (2010).
[Crossref]
[PubMed]
T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater. 6(12), 951–956 (2007).
[Crossref]
[PubMed]
C. H. Chiu, T. C. Lu, H. W. Huang, C. F. Lai, C. C. Kao, J. T. Chu, C. C. Yu, H. C. Kuo, S. C. Wang, C. F. Lin, and T. H. Hsueh, “Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands,” Nanotechnology 18(44), 445201 (2007).
[Crossref]
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1-xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741–4743 (2002).
[Crossref]
S. J. Chua, H. W. Choi, J. Zhang, and P. Li, “Vacancy effects on plasma-induced damage to n-type GaN,” Phys. Rev. B 64(20), 205302 (2001).
[Crossref]
H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, S. Fathololoumi, M. Couillard, G. A. Botton, and Z. Mi, “p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111),” Nano Lett. 11(5), 1919–1924 (2011).
[Crossref]
[PubMed]
D. Zhuang and J. H. Edgar, “Wet etching of GaN, AIN, and SiC: a review,” Mater. Sci. Eng. Rep. 48(1), 1–46 (2005).
[Crossref]
H. W. Li, A. H. Chin, and M. K. Sunkara, “Direction-dependent homoepitaxial growth of GaN nanowires,” Adv. Mater. (Deerfield Beach Fla.) 18(2), 216–220 (2006).
[Crossref]
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1-xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741–4743 (2002).
[Crossref]
S. Barbet, R. Aubry, M. A. di Forte-Poisson, J. C. Jacquet, D. Deresmes, T. Melin, and D. Theron, “Surface potential of n- and p-type GaN measured by Kelvin force microscopy,” Appl. Phys. Lett. 93(21), 212107 (2008).
[Crossref]
H. W. Choi, S. J. Chua, A. Raman, J. S. Pan, and A. T. S. Wee, “Plasma-induced damage to n-type GaN,” Appl. Phys. Lett. 77(12), 1795–1797 (2000).
[Crossref]
A. Armstrong, Q. Li, Y. Lin, A. A. Talin, and G. T. Wang, “GaN nanowire surface state observed using deep level optical spectroscopy,” Appl. Phys. Lett. 96(16), 163106 (2010).
[Crossref]
L. Baird, C. P. Ong, R. A. Cole, N. M. Haegel, A. A. Talin, Q. M. Li, and G. T. Wang, “Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires,” Appl. Phys. Lett. 98(13), 132104 (2011).
[Crossref]
Q. M. Li and G. T. Wang, “Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires,” Appl. Phys. Lett. 97(18), 181107 (2010).
[Crossref]
H. W. Lin, Y. J. Lu, H. Y. Chen, H. M. Lee, and S. Gwo, “InGaN/GaN nanorod array white light-emitting diode,” Appl. Phys. Lett. 97(7), 073101 (2010).
[Crossref]
H. Sekiguchi, K. Kishino, and A. Kikuchi, “Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate,” Appl. Phys. Lett. 96(23), 231104 (2010).
[Crossref]
A. A. Talin, G. T. Wang, E. Lai, and R. J. Anderson, “Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires,” Appl. Phys. Lett. 92(9), 093105 (2008).
[Crossref]
Q. Li, J. J. Figiel, and G. T. Wang, “Dislocation density reduction in GaN by dislocation filtering through a self-assembled monolayer of silica microspheres,” Appl. Phys. Lett. 94(23), 231105 (2009).
[Crossref]
Y. D. Wang, S. J. Chua, S. Tripathy, M. S. Sander, P. Chen, and C. G. Fonstad, “High optical quality GaN nanopillar arrays,” Appl. Phys. Lett. 86(7), 071917 (2005).
[Crossref]
D. A. Stocker, E. F. Schubert, and J. M. Redwing, “Crystallographic wet chemical etching of GaN,” Appl. Phys. Lett. 73(18), 2654–2656 (1998).
[Crossref]
C. H. Kuo, L. C. Chang, C. W. Kuo, and G. C. Chi, “Efficiency improvement of GaN-based light-emitting diode prepared on GaN nanorod template,” IEEE Photon. Technol. Lett. 22(4), 257–259 (2010).
[Crossref]
Y. K. Byeun, K. S. Han, and S. C. Choi, “Influence on the growth temperature for one-dimesional GaN nanostructures by halide vapor-phase epitaxy,” J. Ceram. Process. Res. 6(3), 197–200 (2005).
M. A. Miller, M. H. Crawford, A. A. Allerman, K. C. Cross, M. A. Banas, R. J. Shul, J. Stevens, and K. H. A. Bogart, “Smooth and vertical facet formation for AlGaN-based deep-UV laser diodes,” J. Electron. Mater. 38(4), 533–537 (2009).
[Crossref]
D. Zhuang and J. H. Edgar, “Wet etching of GaN, AIN, and SiC: a review,” Mater. Sci. Eng. Rep. 48(1), 1–46 (2005).
[Crossref]
S. D. Hersee, X. Y. Sun, and X. Wang, “The controlled growth of GaN nanowires,” Nano Lett. 6(8), 1808–1811 (2006).
[Crossref]
[PubMed]
H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, S. Fathololoumi, M. Couillard, G. A. Botton, and Z. Mi, “p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111),” Nano Lett. 11(5), 1919–1924 (2011).
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