Abstract

The reflectivity of absorbing Bragg reflectors consisting of a GaAs/AlAs Bragg mirror and a InGaAs/InGaAsP multiple-quantum-well cavity layer was studied as a function of temperature. An absorption dip in the stop band due to the optical confinement of the Fabry-Perot resonance was observed in the reflectivity spectra. The absorption intensity of the dip increased with temperature and was explained by the resonant coincidence of the Fabry-Perot cavity mode and the quantum-well absorption. The temperature-dependent reflectivity spectra were successfully reproduced using the transfer matrix method and the linear dependence of the refractive index on temperature.

© 2001 Optical Society of America

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References

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  1. S. Tsuda, W. H. Knox, S. T. Cundiff, W. Y. Jan, and J. E. Cunningham, “Mode-locking ultrafast solid-state lasers with saturable Bragg reflectors,” IEEE J. of Selected Topics in Quantum Electron. 2, 454–464 (1996).
    [Crossref]
  2. J. L. Shen, T. Jung, S. Murthy, T. Chau, M. C. Wu, Y. H. Lo, C. L. Chua, and Z. H. Zhu, “Mode locking of external-cavity semiconductor lasers with saturable Bragg reflectors,” J. Opt. Soc. Am. B 16, 1064–1067 (1999).
    [Crossref]
  3. K. Ogawa, Y. Matsui, T. Itatani, and K. Ouchi, “Spectral characteristics of an InP/InGaAs distribution absorbing Bragg reflector,” Appl. Phys. Lett. 72, 155–157 (1998).
    [Crossref]
  4. V. V. Evstropov, M. A. Kaliteevskii, A. L. Lipko, M. A. Sinitsyn, B. V. Tsarenkov, Yu. M. Shernyakov, and B. S. Yavich, “Semiconductor Bragg reflector with absorbing layers,” Semicond. 30, 57–59 (1996).
  5. A. V. Kavokin and M. A. Kaliteevski, “Light-absorption effect on Bragg interference in multilayer semiconductor heterostructures,” J. Appl. Phys. 79, 595–598 (1997).
    [Crossref]
  6. K. Ogawa, Y. Matsui, T. Itatani, and K. Ouchi, “Carrier relaxation in an InP/InGaAs nonlinear Bragg reflector,” Appl. Phys. Lett. 73, 297–299 (1998).
    [Crossref]
  7. E. J. Mozdy, M. A. Jaspan, Z. H. Zhu, Y. H. Lo, C. R. Pollock, R. Bhat, and H. Hong, “NaCl:OH-color center laser modelocked by a novel bonded saturable Bragg reflector,” Opt. Commun. 151, 62–64 (1998).
    [Crossref]
  8. G. M. Yang, M. H. MacDougal, H. Zhao, and P. D. Kapkus, “Microcavity effects on the spontaneous emission from InGaAs/GaAs quantum wells,” J. Appl. Phys. 78, 3605–3609 (1995).
    [Crossref]
  9. J. I. Pankove, Optical processes in semiconductors (Prentice-Hall, 1971).
  10. P. Yeh, Optical waves and layered media (JohnWiley& Sons, 1991).
  11. R. E. Fern and A. Onton, “Refractive index of AlAs,” J. Appl. Phys. 42, 3499–3500 (1971).
    [Crossref]
  12. J. S. Blakemore, “Intrinsic density ni (T) in GaAs: Deduced from band gap and effective mass parameters and derived independently from Cr acceptor capture and emission coefficients,” J. Appl. Phys. 53, 520–531 (1982).
    [Crossref]
  13. A. Yariv and P. Yeh, Optical waves in crystals (Wiley, 1983).
  14. J. Talghader and J. S. Smith, “Thermal dependence of the refractive index of GaAs and AlAs measured using semiconductor multiplayer optical cavities,” Appl. Phys. Lett. 66, 335–337 (1995).
    [Crossref]
  15. E. Zielinski, H. Schweizer, K. Streubel, H. Eisele, and G. Weimann, “Excitonic transitions and exciton damping processes in InGaAs/InP,” J. Appl. Phys. 58, 2196 (1986).
    [Crossref]
  16. J. L. Shen, J. Y. Chang, H. C. Liu, W. C. Chou, Y. F. Chen, T. Jung, and M. C. Wu, “Nearly in-plane photoluminescence studies in asymmetric semiconductor microcavities,” Solid State Commun. 116, 431–435 (2000).
    [Crossref]

2000 (1)

J. L. Shen, J. Y. Chang, H. C. Liu, W. C. Chou, Y. F. Chen, T. Jung, and M. C. Wu, “Nearly in-plane photoluminescence studies in asymmetric semiconductor microcavities,” Solid State Commun. 116, 431–435 (2000).
[Crossref]

1999 (1)

1998 (3)

K. Ogawa, Y. Matsui, T. Itatani, and K. Ouchi, “Spectral characteristics of an InP/InGaAs distribution absorbing Bragg reflector,” Appl. Phys. Lett. 72, 155–157 (1998).
[Crossref]

K. Ogawa, Y. Matsui, T. Itatani, and K. Ouchi, “Carrier relaxation in an InP/InGaAs nonlinear Bragg reflector,” Appl. Phys. Lett. 73, 297–299 (1998).
[Crossref]

E. J. Mozdy, M. A. Jaspan, Z. H. Zhu, Y. H. Lo, C. R. Pollock, R. Bhat, and H. Hong, “NaCl:OH-color center laser modelocked by a novel bonded saturable Bragg reflector,” Opt. Commun. 151, 62–64 (1998).
[Crossref]

1997 (1)

A. V. Kavokin and M. A. Kaliteevski, “Light-absorption effect on Bragg interference in multilayer semiconductor heterostructures,” J. Appl. Phys. 79, 595–598 (1997).
[Crossref]

1996 (2)

S. Tsuda, W. H. Knox, S. T. Cundiff, W. Y. Jan, and J. E. Cunningham, “Mode-locking ultrafast solid-state lasers with saturable Bragg reflectors,” IEEE J. of Selected Topics in Quantum Electron. 2, 454–464 (1996).
[Crossref]

V. V. Evstropov, M. A. Kaliteevskii, A. L. Lipko, M. A. Sinitsyn, B. V. Tsarenkov, Yu. M. Shernyakov, and B. S. Yavich, “Semiconductor Bragg reflector with absorbing layers,” Semicond. 30, 57–59 (1996).

1995 (2)

G. M. Yang, M. H. MacDougal, H. Zhao, and P. D. Kapkus, “Microcavity effects on the spontaneous emission from InGaAs/GaAs quantum wells,” J. Appl. Phys. 78, 3605–3609 (1995).
[Crossref]

J. Talghader and J. S. Smith, “Thermal dependence of the refractive index of GaAs and AlAs measured using semiconductor multiplayer optical cavities,” Appl. Phys. Lett. 66, 335–337 (1995).
[Crossref]

1986 (1)

E. Zielinski, H. Schweizer, K. Streubel, H. Eisele, and G. Weimann, “Excitonic transitions and exciton damping processes in InGaAs/InP,” J. Appl. Phys. 58, 2196 (1986).
[Crossref]

1982 (1)

J. S. Blakemore, “Intrinsic density ni (T) in GaAs: Deduced from band gap and effective mass parameters and derived independently from Cr acceptor capture and emission coefficients,” J. Appl. Phys. 53, 520–531 (1982).
[Crossref]

1971 (1)

R. E. Fern and A. Onton, “Refractive index of AlAs,” J. Appl. Phys. 42, 3499–3500 (1971).
[Crossref]

Bhat, R.

E. J. Mozdy, M. A. Jaspan, Z. H. Zhu, Y. H. Lo, C. R. Pollock, R. Bhat, and H. Hong, “NaCl:OH-color center laser modelocked by a novel bonded saturable Bragg reflector,” Opt. Commun. 151, 62–64 (1998).
[Crossref]

Blakemore, J. S.

J. S. Blakemore, “Intrinsic density ni (T) in GaAs: Deduced from band gap and effective mass parameters and derived independently from Cr acceptor capture and emission coefficients,” J. Appl. Phys. 53, 520–531 (1982).
[Crossref]

Chang, J. Y.

J. L. Shen, J. Y. Chang, H. C. Liu, W. C. Chou, Y. F. Chen, T. Jung, and M. C. Wu, “Nearly in-plane photoluminescence studies in asymmetric semiconductor microcavities,” Solid State Commun. 116, 431–435 (2000).
[Crossref]

Chau, T.

Chen, Y. F.

J. L. Shen, J. Y. Chang, H. C. Liu, W. C. Chou, Y. F. Chen, T. Jung, and M. C. Wu, “Nearly in-plane photoluminescence studies in asymmetric semiconductor microcavities,” Solid State Commun. 116, 431–435 (2000).
[Crossref]

Chou, W. C.

J. L. Shen, J. Y. Chang, H. C. Liu, W. C. Chou, Y. F. Chen, T. Jung, and M. C. Wu, “Nearly in-plane photoluminescence studies in asymmetric semiconductor microcavities,” Solid State Commun. 116, 431–435 (2000).
[Crossref]

Chua, C. L.

Cundiff, S. T.

S. Tsuda, W. H. Knox, S. T. Cundiff, W. Y. Jan, and J. E. Cunningham, “Mode-locking ultrafast solid-state lasers with saturable Bragg reflectors,” IEEE J. of Selected Topics in Quantum Electron. 2, 454–464 (1996).
[Crossref]

Cunningham, J. E.

S. Tsuda, W. H. Knox, S. T. Cundiff, W. Y. Jan, and J. E. Cunningham, “Mode-locking ultrafast solid-state lasers with saturable Bragg reflectors,” IEEE J. of Selected Topics in Quantum Electron. 2, 454–464 (1996).
[Crossref]

Eisele, H.

E. Zielinski, H. Schweizer, K. Streubel, H. Eisele, and G. Weimann, “Excitonic transitions and exciton damping processes in InGaAs/InP,” J. Appl. Phys. 58, 2196 (1986).
[Crossref]

Evstropov, V. V.

V. V. Evstropov, M. A. Kaliteevskii, A. L. Lipko, M. A. Sinitsyn, B. V. Tsarenkov, Yu. M. Shernyakov, and B. S. Yavich, “Semiconductor Bragg reflector with absorbing layers,” Semicond. 30, 57–59 (1996).

Fern, R. E.

R. E. Fern and A. Onton, “Refractive index of AlAs,” J. Appl. Phys. 42, 3499–3500 (1971).
[Crossref]

Hong, H.

E. J. Mozdy, M. A. Jaspan, Z. H. Zhu, Y. H. Lo, C. R. Pollock, R. Bhat, and H. Hong, “NaCl:OH-color center laser modelocked by a novel bonded saturable Bragg reflector,” Opt. Commun. 151, 62–64 (1998).
[Crossref]

Itatani, T.

K. Ogawa, Y. Matsui, T. Itatani, and K. Ouchi, “Carrier relaxation in an InP/InGaAs nonlinear Bragg reflector,” Appl. Phys. Lett. 73, 297–299 (1998).
[Crossref]

K. Ogawa, Y. Matsui, T. Itatani, and K. Ouchi, “Spectral characteristics of an InP/InGaAs distribution absorbing Bragg reflector,” Appl. Phys. Lett. 72, 155–157 (1998).
[Crossref]

Jan, W. Y.

S. Tsuda, W. H. Knox, S. T. Cundiff, W. Y. Jan, and J. E. Cunningham, “Mode-locking ultrafast solid-state lasers with saturable Bragg reflectors,” IEEE J. of Selected Topics in Quantum Electron. 2, 454–464 (1996).
[Crossref]

Jaspan, M. A.

E. J. Mozdy, M. A. Jaspan, Z. H. Zhu, Y. H. Lo, C. R. Pollock, R. Bhat, and H. Hong, “NaCl:OH-color center laser modelocked by a novel bonded saturable Bragg reflector,” Opt. Commun. 151, 62–64 (1998).
[Crossref]

Jung, T.

J. L. Shen, J. Y. Chang, H. C. Liu, W. C. Chou, Y. F. Chen, T. Jung, and M. C. Wu, “Nearly in-plane photoluminescence studies in asymmetric semiconductor microcavities,” Solid State Commun. 116, 431–435 (2000).
[Crossref]

J. L. Shen, T. Jung, S. Murthy, T. Chau, M. C. Wu, Y. H. Lo, C. L. Chua, and Z. H. Zhu, “Mode locking of external-cavity semiconductor lasers with saturable Bragg reflectors,” J. Opt. Soc. Am. B 16, 1064–1067 (1999).
[Crossref]

Kaliteevski, M. A.

A. V. Kavokin and M. A. Kaliteevski, “Light-absorption effect on Bragg interference in multilayer semiconductor heterostructures,” J. Appl. Phys. 79, 595–598 (1997).
[Crossref]

Kaliteevskii, M. A.

V. V. Evstropov, M. A. Kaliteevskii, A. L. Lipko, M. A. Sinitsyn, B. V. Tsarenkov, Yu. M. Shernyakov, and B. S. Yavich, “Semiconductor Bragg reflector with absorbing layers,” Semicond. 30, 57–59 (1996).

Kapkus, P. D.

G. M. Yang, M. H. MacDougal, H. Zhao, and P. D. Kapkus, “Microcavity effects on the spontaneous emission from InGaAs/GaAs quantum wells,” J. Appl. Phys. 78, 3605–3609 (1995).
[Crossref]

Kavokin, A. V.

A. V. Kavokin and M. A. Kaliteevski, “Light-absorption effect on Bragg interference in multilayer semiconductor heterostructures,” J. Appl. Phys. 79, 595–598 (1997).
[Crossref]

Knox, W. H.

S. Tsuda, W. H. Knox, S. T. Cundiff, W. Y. Jan, and J. E. Cunningham, “Mode-locking ultrafast solid-state lasers with saturable Bragg reflectors,” IEEE J. of Selected Topics in Quantum Electron. 2, 454–464 (1996).
[Crossref]

Lipko, A. L.

V. V. Evstropov, M. A. Kaliteevskii, A. L. Lipko, M. A. Sinitsyn, B. V. Tsarenkov, Yu. M. Shernyakov, and B. S. Yavich, “Semiconductor Bragg reflector with absorbing layers,” Semicond. 30, 57–59 (1996).

Liu, H. C.

J. L. Shen, J. Y. Chang, H. C. Liu, W. C. Chou, Y. F. Chen, T. Jung, and M. C. Wu, “Nearly in-plane photoluminescence studies in asymmetric semiconductor microcavities,” Solid State Commun. 116, 431–435 (2000).
[Crossref]

Lo, Y. H.

J. L. Shen, T. Jung, S. Murthy, T. Chau, M. C. Wu, Y. H. Lo, C. L. Chua, and Z. H. Zhu, “Mode locking of external-cavity semiconductor lasers with saturable Bragg reflectors,” J. Opt. Soc. Am. B 16, 1064–1067 (1999).
[Crossref]

E. J. Mozdy, M. A. Jaspan, Z. H. Zhu, Y. H. Lo, C. R. Pollock, R. Bhat, and H. Hong, “NaCl:OH-color center laser modelocked by a novel bonded saturable Bragg reflector,” Opt. Commun. 151, 62–64 (1998).
[Crossref]

MacDougal, M. H.

G. M. Yang, M. H. MacDougal, H. Zhao, and P. D. Kapkus, “Microcavity effects on the spontaneous emission from InGaAs/GaAs quantum wells,” J. Appl. Phys. 78, 3605–3609 (1995).
[Crossref]

Matsui, Y.

K. Ogawa, Y. Matsui, T. Itatani, and K. Ouchi, “Spectral characteristics of an InP/InGaAs distribution absorbing Bragg reflector,” Appl. Phys. Lett. 72, 155–157 (1998).
[Crossref]

K. Ogawa, Y. Matsui, T. Itatani, and K. Ouchi, “Carrier relaxation in an InP/InGaAs nonlinear Bragg reflector,” Appl. Phys. Lett. 73, 297–299 (1998).
[Crossref]

Mozdy, E. J.

E. J. Mozdy, M. A. Jaspan, Z. H. Zhu, Y. H. Lo, C. R. Pollock, R. Bhat, and H. Hong, “NaCl:OH-color center laser modelocked by a novel bonded saturable Bragg reflector,” Opt. Commun. 151, 62–64 (1998).
[Crossref]

Murthy, S.

Ogawa, K.

K. Ogawa, Y. Matsui, T. Itatani, and K. Ouchi, “Spectral characteristics of an InP/InGaAs distribution absorbing Bragg reflector,” Appl. Phys. Lett. 72, 155–157 (1998).
[Crossref]

K. Ogawa, Y. Matsui, T. Itatani, and K. Ouchi, “Carrier relaxation in an InP/InGaAs nonlinear Bragg reflector,” Appl. Phys. Lett. 73, 297–299 (1998).
[Crossref]

Onton, A.

R. E. Fern and A. Onton, “Refractive index of AlAs,” J. Appl. Phys. 42, 3499–3500 (1971).
[Crossref]

Ouchi, K.

K. Ogawa, Y. Matsui, T. Itatani, and K. Ouchi, “Carrier relaxation in an InP/InGaAs nonlinear Bragg reflector,” Appl. Phys. Lett. 73, 297–299 (1998).
[Crossref]

K. Ogawa, Y. Matsui, T. Itatani, and K. Ouchi, “Spectral characteristics of an InP/InGaAs distribution absorbing Bragg reflector,” Appl. Phys. Lett. 72, 155–157 (1998).
[Crossref]

Pankove, J. I.

J. I. Pankove, Optical processes in semiconductors (Prentice-Hall, 1971).

Pollock, C. R.

E. J. Mozdy, M. A. Jaspan, Z. H. Zhu, Y. H. Lo, C. R. Pollock, R. Bhat, and H. Hong, “NaCl:OH-color center laser modelocked by a novel bonded saturable Bragg reflector,” Opt. Commun. 151, 62–64 (1998).
[Crossref]

Schweizer, H.

E. Zielinski, H. Schweizer, K. Streubel, H. Eisele, and G. Weimann, “Excitonic transitions and exciton damping processes in InGaAs/InP,” J. Appl. Phys. 58, 2196 (1986).
[Crossref]

Shen, J. L.

J. L. Shen, J. Y. Chang, H. C. Liu, W. C. Chou, Y. F. Chen, T. Jung, and M. C. Wu, “Nearly in-plane photoluminescence studies in asymmetric semiconductor microcavities,” Solid State Commun. 116, 431–435 (2000).
[Crossref]

J. L. Shen, T. Jung, S. Murthy, T. Chau, M. C. Wu, Y. H. Lo, C. L. Chua, and Z. H. Zhu, “Mode locking of external-cavity semiconductor lasers with saturable Bragg reflectors,” J. Opt. Soc. Am. B 16, 1064–1067 (1999).
[Crossref]

Shernyakov, Yu. M.

V. V. Evstropov, M. A. Kaliteevskii, A. L. Lipko, M. A. Sinitsyn, B. V. Tsarenkov, Yu. M. Shernyakov, and B. S. Yavich, “Semiconductor Bragg reflector with absorbing layers,” Semicond. 30, 57–59 (1996).

Sinitsyn, M. A.

V. V. Evstropov, M. A. Kaliteevskii, A. L. Lipko, M. A. Sinitsyn, B. V. Tsarenkov, Yu. M. Shernyakov, and B. S. Yavich, “Semiconductor Bragg reflector with absorbing layers,” Semicond. 30, 57–59 (1996).

Smith, J. S.

J. Talghader and J. S. Smith, “Thermal dependence of the refractive index of GaAs and AlAs measured using semiconductor multiplayer optical cavities,” Appl. Phys. Lett. 66, 335–337 (1995).
[Crossref]

Streubel, K.

E. Zielinski, H. Schweizer, K. Streubel, H. Eisele, and G. Weimann, “Excitonic transitions and exciton damping processes in InGaAs/InP,” J. Appl. Phys. 58, 2196 (1986).
[Crossref]

Talghader, J.

J. Talghader and J. S. Smith, “Thermal dependence of the refractive index of GaAs and AlAs measured using semiconductor multiplayer optical cavities,” Appl. Phys. Lett. 66, 335–337 (1995).
[Crossref]

Tsarenkov, B. V.

V. V. Evstropov, M. A. Kaliteevskii, A. L. Lipko, M. A. Sinitsyn, B. V. Tsarenkov, Yu. M. Shernyakov, and B. S. Yavich, “Semiconductor Bragg reflector with absorbing layers,” Semicond. 30, 57–59 (1996).

Tsuda, S.

S. Tsuda, W. H. Knox, S. T. Cundiff, W. Y. Jan, and J. E. Cunningham, “Mode-locking ultrafast solid-state lasers with saturable Bragg reflectors,” IEEE J. of Selected Topics in Quantum Electron. 2, 454–464 (1996).
[Crossref]

Weimann, G.

E. Zielinski, H. Schweizer, K. Streubel, H. Eisele, and G. Weimann, “Excitonic transitions and exciton damping processes in InGaAs/InP,” J. Appl. Phys. 58, 2196 (1986).
[Crossref]

Wu, M. C.

J. L. Shen, J. Y. Chang, H. C. Liu, W. C. Chou, Y. F. Chen, T. Jung, and M. C. Wu, “Nearly in-plane photoluminescence studies in asymmetric semiconductor microcavities,” Solid State Commun. 116, 431–435 (2000).
[Crossref]

J. L. Shen, T. Jung, S. Murthy, T. Chau, M. C. Wu, Y. H. Lo, C. L. Chua, and Z. H. Zhu, “Mode locking of external-cavity semiconductor lasers with saturable Bragg reflectors,” J. Opt. Soc. Am. B 16, 1064–1067 (1999).
[Crossref]

Yang, G. M.

G. M. Yang, M. H. MacDougal, H. Zhao, and P. D. Kapkus, “Microcavity effects on the spontaneous emission from InGaAs/GaAs quantum wells,” J. Appl. Phys. 78, 3605–3609 (1995).
[Crossref]

Yariv, A.

A. Yariv and P. Yeh, Optical waves in crystals (Wiley, 1983).

Yavich, B. S.

V. V. Evstropov, M. A. Kaliteevskii, A. L. Lipko, M. A. Sinitsyn, B. V. Tsarenkov, Yu. M. Shernyakov, and B. S. Yavich, “Semiconductor Bragg reflector with absorbing layers,” Semicond. 30, 57–59 (1996).

Yeh, P.

A. Yariv and P. Yeh, Optical waves in crystals (Wiley, 1983).

P. Yeh, Optical waves and layered media (JohnWiley& Sons, 1991).

Zhao, H.

G. M. Yang, M. H. MacDougal, H. Zhao, and P. D. Kapkus, “Microcavity effects on the spontaneous emission from InGaAs/GaAs quantum wells,” J. Appl. Phys. 78, 3605–3609 (1995).
[Crossref]

Zhu, Z. H.

J. L. Shen, T. Jung, S. Murthy, T. Chau, M. C. Wu, Y. H. Lo, C. L. Chua, and Z. H. Zhu, “Mode locking of external-cavity semiconductor lasers with saturable Bragg reflectors,” J. Opt. Soc. Am. B 16, 1064–1067 (1999).
[Crossref]

E. J. Mozdy, M. A. Jaspan, Z. H. Zhu, Y. H. Lo, C. R. Pollock, R. Bhat, and H. Hong, “NaCl:OH-color center laser modelocked by a novel bonded saturable Bragg reflector,” Opt. Commun. 151, 62–64 (1998).
[Crossref]

Zielinski, E.

E. Zielinski, H. Schweizer, K. Streubel, H. Eisele, and G. Weimann, “Excitonic transitions and exciton damping processes in InGaAs/InP,” J. Appl. Phys. 58, 2196 (1986).
[Crossref]

Appl. Phys. Lett. (3)

K. Ogawa, Y. Matsui, T. Itatani, and K. Ouchi, “Spectral characteristics of an InP/InGaAs distribution absorbing Bragg reflector,” Appl. Phys. Lett. 72, 155–157 (1998).
[Crossref]

K. Ogawa, Y. Matsui, T. Itatani, and K. Ouchi, “Carrier relaxation in an InP/InGaAs nonlinear Bragg reflector,” Appl. Phys. Lett. 73, 297–299 (1998).
[Crossref]

J. Talghader and J. S. Smith, “Thermal dependence of the refractive index of GaAs and AlAs measured using semiconductor multiplayer optical cavities,” Appl. Phys. Lett. 66, 335–337 (1995).
[Crossref]

IEEE J. of Selected Topics in Quantum Electron. (1)

S. Tsuda, W. H. Knox, S. T. Cundiff, W. Y. Jan, and J. E. Cunningham, “Mode-locking ultrafast solid-state lasers with saturable Bragg reflectors,” IEEE J. of Selected Topics in Quantum Electron. 2, 454–464 (1996).
[Crossref]

J. Appl. Phys. (5)

G. M. Yang, M. H. MacDougal, H. Zhao, and P. D. Kapkus, “Microcavity effects on the spontaneous emission from InGaAs/GaAs quantum wells,” J. Appl. Phys. 78, 3605–3609 (1995).
[Crossref]

E. Zielinski, H. Schweizer, K. Streubel, H. Eisele, and G. Weimann, “Excitonic transitions and exciton damping processes in InGaAs/InP,” J. Appl. Phys. 58, 2196 (1986).
[Crossref]

R. E. Fern and A. Onton, “Refractive index of AlAs,” J. Appl. Phys. 42, 3499–3500 (1971).
[Crossref]

J. S. Blakemore, “Intrinsic density ni (T) in GaAs: Deduced from band gap and effective mass parameters and derived independently from Cr acceptor capture and emission coefficients,” J. Appl. Phys. 53, 520–531 (1982).
[Crossref]

A. V. Kavokin and M. A. Kaliteevski, “Light-absorption effect on Bragg interference in multilayer semiconductor heterostructures,” J. Appl. Phys. 79, 595–598 (1997).
[Crossref]

J. Opt. Soc. Am. B (1)

Opt. Commun. (1)

E. J. Mozdy, M. A. Jaspan, Z. H. Zhu, Y. H. Lo, C. R. Pollock, R. Bhat, and H. Hong, “NaCl:OH-color center laser modelocked by a novel bonded saturable Bragg reflector,” Opt. Commun. 151, 62–64 (1998).
[Crossref]

Semicond. (1)

V. V. Evstropov, M. A. Kaliteevskii, A. L. Lipko, M. A. Sinitsyn, B. V. Tsarenkov, Yu. M. Shernyakov, and B. S. Yavich, “Semiconductor Bragg reflector with absorbing layers,” Semicond. 30, 57–59 (1996).

Solid State Commun. (1)

J. L. Shen, J. Y. Chang, H. C. Liu, W. C. Chou, Y. F. Chen, T. Jung, and M. C. Wu, “Nearly in-plane photoluminescence studies in asymmetric semiconductor microcavities,” Solid State Commun. 116, 431–435 (2000).
[Crossref]

Other (3)

A. Yariv and P. Yeh, Optical waves in crystals (Wiley, 1983).

J. I. Pankove, Optical processes in semiconductors (Prentice-Hall, 1971).

P. Yeh, Optical waves and layered media (JohnWiley& Sons, 1991).

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Figures (6)

Fig. 1.
Fig. 1.

Measured reflection spectra of absorbing Bragg reflectors as a function of temperature.

Fig. 2.
Fig. 2.

Calculated reflection spectra of absorbing Bragg reflectors as a function of temperature.

Table. 1.
Table. 1.

Values of dip positions, κs , and αs as functions of temperature.

Fig. 3.
Fig. 3.

Temperature dependence of the experimentally measured (solid circles) and theoretically predicted (solid line) bandwidth of the stop band.

Fig. 4.
Fig. 4.

Temperature dependence of the experimentally measured (solid circles) and theoretically predicted (solid line) center of the stop band.

Fig. 5.
Fig. 5.

Temperature dependence of the experimentally measured (solid circles) and theoretically predicted (solid line) dip position in the stop band.

Equations (2)

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( M 11 M 12 M 21 M 22 ) = D 0 1 · D c · P c · D c 1 · [ D L · P L · D L 1 · D H · P H · D H 1 ] 27 · D H ,
Δ ω ( T ) = 4 π · sin 1 n H ( T ) n L ( T ) n H ( T ) + n L ( T ) · ω ( T ) ,

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