Abstract

We present a new technique for porous semiconductor formation which is based on the exposure of semiconductor surfaces to gas phase etchants. The technique offers the possibility of fabricating light-emitting devices by selectively exposing a silicon surface to HF vapor. Photoluminescence measurements reveal an efficient emission at around 750 nm. FTIR analysis confirm the existence of strong hydrogen incorporation and oxidation as evidenced from the local bonding environment of hydrogen and oxygen atoms.

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  1. L. T. Canham, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers," Appl. Phys. Lett. 57, 1046 (1990).
  2. V. Lehmann and U. Gosele, "Porous silicon formation: A quantum wire effect," Appl. Phys. Lett. 58, 856 (1991).
  3. L. T.canham, W. Y.Leong, T. I.Cox, and L. Taylor, "Efficient visible electroluminescence from highly porous silicon under cathodic bias," Appl. Phys. Letts. 21, 2563(1992)
  4. H. D. Fuchs, M. Stutzmann, M. S. Brandt, M. Rosenbauer, J. Weber, A. Breitschwerdt, P. Deak and M. Cardona, "Porous silicon and siloxene: vibrational and structural properties," Phys. Rev. B48, 8172(1993)
  5. A. G. Cullis, L. T. Canham and P. D. J. Calcott, J. Appl. Phys. 82, 909(1997).
  6. Z. Gaburro, H. You and D. Babie,"Effect of Resistivity and current density on photoluminescence in porous silicon produced at low HF concentration," J. Appl. Phys. 84, 6345 (1998).
  7. J. Sarathy, S. Shih, K. H. Jung, C. Tsai, K. -H. Li, D. L. Kwong, J. C. Campbell, "Demonstration of photoluminescence in nonanodized silicon," Appl. Phys. Lett. 60, 1533 (1992).
  8. A. Ksendzov, R. W. Fathauer, T. George , W. T. Pike, and R. P. Vasquez,"Visible photoluminescence of porous Si1-xGex obtained by stain etching," Appl. Phys. Lett. 63, 200 (1993).
  9. S. Kalem and Rosenbauer, "Optical and structural investigation of stain-etched silicon," Appl. Phys. Lett. 67, 2551 (1995).
  10. Y. Kanemitsu, T. Futagi, T. Matsumoto, and H. Mimura, "Origin of the blue and red photoluminescence from oxidized porous silicon," Phys. Rev. B49, 14732 (1994).
  11. J. L. Gole and D. A. Dixon, "Evidence for oxide formation from the single and multiphoton excitation of a porous silicon surface or silicon nanoparticles," J. Appl. Phys. 83, 5985 (1998).

Other

L. T. Canham, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers," Appl. Phys. Lett. 57, 1046 (1990).

V. Lehmann and U. Gosele, "Porous silicon formation: A quantum wire effect," Appl. Phys. Lett. 58, 856 (1991).

L. T.canham, W. Y.Leong, T. I.Cox, and L. Taylor, "Efficient visible electroluminescence from highly porous silicon under cathodic bias," Appl. Phys. Letts. 21, 2563(1992)

H. D. Fuchs, M. Stutzmann, M. S. Brandt, M. Rosenbauer, J. Weber, A. Breitschwerdt, P. Deak and M. Cardona, "Porous silicon and siloxene: vibrational and structural properties," Phys. Rev. B48, 8172(1993)

A. G. Cullis, L. T. Canham and P. D. J. Calcott, J. Appl. Phys. 82, 909(1997).

Z. Gaburro, H. You and D. Babie,"Effect of Resistivity and current density on photoluminescence in porous silicon produced at low HF concentration," J. Appl. Phys. 84, 6345 (1998).

J. Sarathy, S. Shih, K. H. Jung, C. Tsai, K. -H. Li, D. L. Kwong, J. C. Campbell, "Demonstration of photoluminescence in nonanodized silicon," Appl. Phys. Lett. 60, 1533 (1992).

A. Ksendzov, R. W. Fathauer, T. George , W. T. Pike, and R. P. Vasquez,"Visible photoluminescence of porous Si1-xGex obtained by stain etching," Appl. Phys. Lett. 63, 200 (1993).

S. Kalem and Rosenbauer, "Optical and structural investigation of stain-etched silicon," Appl. Phys. Lett. 67, 2551 (1995).

Y. Kanemitsu, T. Futagi, T. Matsumoto, and H. Mimura, "Origin of the blue and red photoluminescence from oxidized porous silicon," Phys. Rev. B49, 14732 (1994).

J. L. Gole and D. A. Dixon, "Evidence for oxide formation from the single and multiphoton excitation of a porous silicon surface or silicon nanoparticles," J. Appl. Phys. 83, 5985 (1998).

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