Abstract

We demonstrate a simple method to fabricate efficient, electrically driven, polarized, and phosphor-free white semipolar (20-21) InGaN light-emitting diodes (LEDs) by adopting a top blue quantum well (QW) and a bottom yellow QW directly grown on (20-21) semipolar bulk GaN substrate. At an injection current of 20 mA, the fabricated 0.1 mm2 size regular LEDs show an output power of 0.9 mW tested on wafer without any backside roughing, a forward voltage of 3.1 V and two emission peaks located at 427 and 560 nm. A high polarization ratio of 0.40 was measured in the semipolar monolithic white LEDs, making them promising candidates for backlighting sources in liquid crystal displays (LCDs). Furthermore, a 3dB modulation bandwidth of 410 MHz in visible light communication (VLC) was obtained in the micro-size LEDs (µLEDs) with a size of 20×20 µm2 and 40×40 µm2, which could overcome the limitation of slow frequency response of yellow phosphor in commercial white LEDs combing blue LEDs and yellow phosphor.

© 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. S. Nakamura, “The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes,” Science 281(5379), 956–961 (1998).
    [Crossref]
  2. E. F. Schubert and J. K. Kim, “The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes,” Science 308(5726), 1274–1278 (2005).
    [Crossref]
  3. Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” J. Phys. D: Appl. Phys. 43(35), 354002 (2010).
    [Crossref]
  4. J. H. Ryou, P. D. Yoder, J. P. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis, “Control of quantum-confined stark effect in InGaN-based quantum wells,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1080–1091 (2009).
    [Crossref]
  5. H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
    [Crossref]
  6. D. F. Feezell, M. C. Schmidt, S. P. DenBaars, and S. Nakamura, “Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes,” MRS Bull. 34(5), 318–323 (2009).
    [Crossref]
  7. Y. Zhao, J. Sonoda, C.-C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (1011) InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3(10), 102101 (2010).
    [Crossref]
  8. S. Mehari, D. A. Cohen, D. L. Becerra, S. Nakamura, and S. P. DenBaars, “Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 20-2-1 GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers,” Opt. Express 26(2), 1564–1572 (2018).
    [Crossref]
  9. H. Li, P. Li, J. Kang, Z. Li, Z. Li, J. Li, X. Yi, and G. Wang, “Phosphor-free, color-tunable monolithic InGaN light-emitting diodes,” Appl. Phys. Express 6(10), 102103 (2013).
    [Crossref]
  10. S.-H. Lim, Y.-H. Ko, C. Rodriguez, S.-H. Gong, and Y.-H. Cho, “Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures,” Light: Sci. Appl. 5(2), e16030 (2016).
    [Crossref]
  11. H. Masui, H. Yamada, K. Iso, S. Nakamura, and S. P. DenBaars, “Optical polarization characteristics of In GaN/GaN light-emitting diodes fabricated on GaN substrates oriented between (10-10) and (10-1-1) planes,” Appl. Phys. Lett. 92(9), 091105 (2008).
    [Crossref]
  12. H. Le Minh, D. O’Brien, G. Faulkner, L. Zeng, K. Lee, D. Jung, Y. Oh, and E. T. Won, “100-Mb/s NRZ visible light communications using a postequalized white LED,” IEEE Photonics Technol. Lett. 21(15), 1063–1065 (2009).
    [Crossref]
  13. A. Rashidi, M. Monavarian, A. Aragon, A. Rishinaramangalam, and D. Feezell, “Nonpolar m-Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth,” IEEE Electron Device Lett. 39(4), 520–523 (2018).
    [Crossref]
  14. Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
    [Crossref]
  15. S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20-21) GaN Substrates,” Appl. Phys. Express 3(12), 122102 (2010).
    [Crossref]
  16. S. J. Kowsz, E. C. Young, B. P. Yonkee, C. D. Pynn, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells,” Opt. Express 25(4), 3841–3849 (2017).
    [Crossref]
  17. S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells,” Appl. Phys. Lett. 107(10), 101104 (2015).
    [Crossref]
  18. M. S. Wong, D. Hwang, A. I. Alhassan, C. Lee, R. Ley, S. Nakamura, and S. P. DenBaars, “High Efficiency of III-Nitride Micro-Light-Emitting Diodes by Sidewall Passivation Using Atomic Layer Deposition,” Opt. Express 26(16), 21324–21331 (2018).
    [Crossref]
  19. H. Li, M. S. Wong, M. Khoury, B. Bonef, H. Zhang, Y. C. Chow, P. Li, J. Kearns, A. A. Taylor, P. D. Mierry, Z. Hassan, S. Nakamura, and S. P. DenBaars, “Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template,” Opt. Express 27(17), 24154–24160 (2019).
    [Crossref]
  20. H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
    [Crossref]
  21. B. Bonef, M. Catalano, C. Lund, S. P. Denbaars, S. Nakamura, U. K. Mishra, M. J. Kim, and S. Keller, “Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography,” Appl. Phys. Lett. 110(14), 143101 (2017).
    [Crossref]
  22. R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi C 11(3-4), 628–631 (2014).
    [Crossref]
  23. M. Khoury, H. Li, P. Li, Y. C. Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Polarized monolithic white semipolar (20-21) InGaN light-emitting diodes grown on high quality (20-21) GaN/sapphire templates and its application to visible light communication,” Nano Energy 67, 104236 (2020).
    [Crossref]
  24. M. S. Islim, R. X. Ferreira, X. He, E. Xie, S. Videv, S. Viola, S. Watson, N. Bamiedakis, R. V. Penty, I. H. White, and A. E. Kelly, “Towards 10 Gb/s orthogonal frequency division multiplexing-based visible light communication using a GaN violet micro-LED,” Photonics Res. 5(2), A35–A43 (2017).
    [Crossref]
  25. M. Monavarian, A. Rashidi, A. A. Aragon, M. Nami, S. H. Oh, S. P. DenBaars, and D. Feezell, “Trade-off between bandwidth and efficiency in semipolar (20-2-1) InGaN/GaN single- and multiple-quantum-well light-emitting diodes,” Appl. Phys. Lett. 112(19), 191102 (2018).
    [Crossref]

2020 (1)

M. Khoury, H. Li, P. Li, Y. C. Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Polarized monolithic white semipolar (20-21) InGaN light-emitting diodes grown on high quality (20-21) GaN/sapphire templates and its application to visible light communication,” Nano Energy 67, 104236 (2020).
[Crossref]

2019 (1)

2018 (4)

M. S. Wong, D. Hwang, A. I. Alhassan, C. Lee, R. Ley, S. Nakamura, and S. P. DenBaars, “High Efficiency of III-Nitride Micro-Light-Emitting Diodes by Sidewall Passivation Using Atomic Layer Deposition,” Opt. Express 26(16), 21324–21331 (2018).
[Crossref]

M. Monavarian, A. Rashidi, A. A. Aragon, M. Nami, S. H. Oh, S. P. DenBaars, and D. Feezell, “Trade-off between bandwidth and efficiency in semipolar (20-2-1) InGaN/GaN single- and multiple-quantum-well light-emitting diodes,” Appl. Phys. Lett. 112(19), 191102 (2018).
[Crossref]

S. Mehari, D. A. Cohen, D. L. Becerra, S. Nakamura, and S. P. DenBaars, “Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 20-2-1 GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers,” Opt. Express 26(2), 1564–1572 (2018).
[Crossref]

A. Rashidi, M. Monavarian, A. Aragon, A. Rishinaramangalam, and D. Feezell, “Nonpolar m-Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth,” IEEE Electron Device Lett. 39(4), 520–523 (2018).
[Crossref]

2017 (4)

S. J. Kowsz, E. C. Young, B. P. Yonkee, C. D. Pynn, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells,” Opt. Express 25(4), 3841–3849 (2017).
[Crossref]

M. S. Islim, R. X. Ferreira, X. He, E. Xie, S. Videv, S. Viola, S. Watson, N. Bamiedakis, R. V. Penty, I. H. White, and A. E. Kelly, “Towards 10 Gb/s orthogonal frequency division multiplexing-based visible light communication using a GaN violet micro-LED,” Photonics Res. 5(2), A35–A43 (2017).
[Crossref]

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref]

B. Bonef, M. Catalano, C. Lund, S. P. Denbaars, S. Nakamura, U. K. Mishra, M. J. Kim, and S. Keller, “Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography,” Appl. Phys. Lett. 110(14), 143101 (2017).
[Crossref]

2016 (1)

S.-H. Lim, Y.-H. Ko, C. Rodriguez, S.-H. Gong, and Y.-H. Cho, “Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures,” Light: Sci. Appl. 5(2), e16030 (2016).
[Crossref]

2015 (1)

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells,” Appl. Phys. Lett. 107(10), 101104 (2015).
[Crossref]

2014 (1)

R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi C 11(3-4), 628–631 (2014).
[Crossref]

2013 (2)

H. Li, P. Li, J. Kang, Z. Li, Z. Li, J. Li, X. Yi, and G. Wang, “Phosphor-free, color-tunable monolithic InGaN light-emitting diodes,” Appl. Phys. Express 6(10), 102103 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

2012 (1)

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

2010 (3)

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20-21) GaN Substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Y. Zhao, J. Sonoda, C.-C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (1011) InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3(10), 102101 (2010).
[Crossref]

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” J. Phys. D: Appl. Phys. 43(35), 354002 (2010).
[Crossref]

2009 (3)

J. H. Ryou, P. D. Yoder, J. P. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis, “Control of quantum-confined stark effect in InGaN-based quantum wells,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1080–1091 (2009).
[Crossref]

D. F. Feezell, M. C. Schmidt, S. P. DenBaars, and S. Nakamura, “Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes,” MRS Bull. 34(5), 318–323 (2009).
[Crossref]

H. Le Minh, D. O’Brien, G. Faulkner, L. Zeng, K. Lee, D. Jung, Y. Oh, and E. T. Won, “100-Mb/s NRZ visible light communications using a postequalized white LED,” IEEE Photonics Technol. Lett. 21(15), 1063–1065 (2009).
[Crossref]

2008 (1)

H. Masui, H. Yamada, K. Iso, S. Nakamura, and S. P. DenBaars, “Optical polarization characteristics of In GaN/GaN light-emitting diodes fabricated on GaN substrates oriented between (10-10) and (10-1-1) planes,” Appl. Phys. Lett. 92(9), 091105 (2008).
[Crossref]

2005 (1)

E. F. Schubert and J. K. Kim, “The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes,” Science 308(5726), 1274–1278 (2005).
[Crossref]

1998 (1)

S. Nakamura, “The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes,” Science 281(5379), 956–961 (1998).
[Crossref]

Alhassan, A. I.

M. S. Wong, D. Hwang, A. I. Alhassan, C. Lee, R. Ley, S. Nakamura, and S. P. DenBaars, “High Efficiency of III-Nitride Micro-Light-Emitting Diodes by Sidewall Passivation Using Atomic Layer Deposition,” Opt. Express 26(16), 21324–21331 (2018).
[Crossref]

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref]

Aragon, A.

A. Rashidi, M. Monavarian, A. Aragon, A. Rishinaramangalam, and D. Feezell, “Nonpolar m-Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth,” IEEE Electron Device Lett. 39(4), 520–523 (2018).
[Crossref]

Aragon, A. A.

M. Monavarian, A. Rashidi, A. A. Aragon, M. Nami, S. H. Oh, S. P. DenBaars, and D. Feezell, “Trade-off between bandwidth and efficiency in semipolar (20-2-1) InGaN/GaN single- and multiple-quantum-well light-emitting diodes,” Appl. Phys. Lett. 112(19), 191102 (2018).
[Crossref]

Azimah, E.

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref]

Bamiedakis, N.

M. S. Islim, R. X. Ferreira, X. He, E. Xie, S. Videv, S. Viola, S. Watson, N. Bamiedakis, R. V. Penty, I. H. White, and A. E. Kelly, “Towards 10 Gb/s orthogonal frequency division multiplexing-based visible light communication using a GaN violet micro-LED,” Photonics Res. 5(2), A35–A43 (2017).
[Crossref]

Becerra, D. L.

Bonef, B.

M. Khoury, H. Li, P. Li, Y. C. Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Polarized monolithic white semipolar (20-21) InGaN light-emitting diodes grown on high quality (20-21) GaN/sapphire templates and its application to visible light communication,” Nano Energy 67, 104236 (2020).
[Crossref]

H. Li, M. S. Wong, M. Khoury, B. Bonef, H. Zhang, Y. C. Chow, P. Li, J. Kearns, A. A. Taylor, P. D. Mierry, Z. Hassan, S. Nakamura, and S. P. DenBaars, “Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template,” Opt. Express 27(17), 24154–24160 (2019).
[Crossref]

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref]

B. Bonef, M. Catalano, C. Lund, S. P. Denbaars, S. Nakamura, U. K. Mishra, M. J. Kim, and S. Keller, “Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography,” Appl. Phys. Lett. 110(14), 143101 (2017).
[Crossref]

Brinkley, S.

Y. Zhao, J. Sonoda, C.-C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (1011) InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3(10), 102101 (2010).
[Crossref]

Catalano, M.

B. Bonef, M. Catalano, C. Lund, S. P. Denbaars, S. Nakamura, U. K. Mishra, M. J. Kim, and S. Keller, “Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography,” Appl. Phys. Lett. 110(14), 143101 (2017).
[Crossref]

Cho, Y.-H.

S.-H. Lim, Y.-H. Ko, C. Rodriguez, S.-H. Gong, and Y.-H. Cho, “Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures,” Light: Sci. Appl. 5(2), e16030 (2016).
[Crossref]

Choi, J.

M. Khoury, H. Li, P. Li, Y. C. Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Polarized monolithic white semipolar (20-21) InGaN light-emitting diodes grown on high quality (20-21) GaN/sapphire templates and its application to visible light communication,” Nano Energy 67, 104236 (2020).
[Crossref]

Choi, S.

J. H. Ryou, P. D. Yoder, J. P. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis, “Control of quantum-confined stark effect in InGaN-based quantum wells,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1080–1091 (2009).
[Crossref]

Chow, Y. C.

M. Khoury, H. Li, P. Li, Y. C. Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Polarized monolithic white semipolar (20-21) InGaN light-emitting diodes grown on high quality (20-21) GaN/sapphire templates and its application to visible light communication,” Nano Energy 67, 104236 (2020).
[Crossref]

H. Li, M. S. Wong, M. Khoury, B. Bonef, H. Zhang, Y. C. Chow, P. Li, J. Kearns, A. A. Taylor, P. D. Mierry, Z. Hassan, S. Nakamura, and S. P. DenBaars, “Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template,” Opt. Express 27(17), 24154–24160 (2019).
[Crossref]

Chung, R. B.

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20-21) GaN Substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Cohen, D. A.

De Mierry, P.

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref]

DenBaars, S. P.

M. Khoury, H. Li, P. Li, Y. C. Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Polarized monolithic white semipolar (20-21) InGaN light-emitting diodes grown on high quality (20-21) GaN/sapphire templates and its application to visible light communication,” Nano Energy 67, 104236 (2020).
[Crossref]

H. Li, M. S. Wong, M. Khoury, B. Bonef, H. Zhang, Y. C. Chow, P. Li, J. Kearns, A. A. Taylor, P. D. Mierry, Z. Hassan, S. Nakamura, and S. P. DenBaars, “Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template,” Opt. Express 27(17), 24154–24160 (2019).
[Crossref]

M. S. Wong, D. Hwang, A. I. Alhassan, C. Lee, R. Ley, S. Nakamura, and S. P. DenBaars, “High Efficiency of III-Nitride Micro-Light-Emitting Diodes by Sidewall Passivation Using Atomic Layer Deposition,” Opt. Express 26(16), 21324–21331 (2018).
[Crossref]

S. Mehari, D. A. Cohen, D. L. Becerra, S. Nakamura, and S. P. DenBaars, “Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 20-2-1 GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers,” Opt. Express 26(2), 1564–1572 (2018).
[Crossref]

M. Monavarian, A. Rashidi, A. A. Aragon, M. Nami, S. H. Oh, S. P. DenBaars, and D. Feezell, “Trade-off between bandwidth and efficiency in semipolar (20-2-1) InGaN/GaN single- and multiple-quantum-well light-emitting diodes,” Appl. Phys. Lett. 112(19), 191102 (2018).
[Crossref]

B. Bonef, M. Catalano, C. Lund, S. P. Denbaars, S. Nakamura, U. K. Mishra, M. J. Kim, and S. Keller, “Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography,” Appl. Phys. Lett. 110(14), 143101 (2017).
[Crossref]

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref]

S. J. Kowsz, E. C. Young, B. P. Yonkee, C. D. Pynn, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells,” Opt. Express 25(4), 3841–3849 (2017).
[Crossref]

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells,” Appl. Phys. Lett. 107(10), 101104 (2015).
[Crossref]

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20-21) GaN Substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Y. Zhao, J. Sonoda, C.-C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (1011) InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3(10), 102101 (2010).
[Crossref]

D. F. Feezell, M. C. Schmidt, S. P. DenBaars, and S. Nakamura, “Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes,” MRS Bull. 34(5), 318–323 (2009).
[Crossref]

H. Masui, H. Yamada, K. Iso, S. Nakamura, and S. P. DenBaars, “Optical polarization characteristics of In GaN/GaN light-emitting diodes fabricated on GaN substrates oriented between (10-10) and (10-1-1) planes,” Appl. Phys. Lett. 92(9), 091105 (2008).
[Crossref]

Dupuis, R. D.

J. H. Ryou, P. D. Yoder, J. P. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis, “Control of quantum-confined stark effect in InGaN-based quantum wells,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1080–1091 (2009).
[Crossref]

Farrell, R. M.

S. J. Kowsz, E. C. Young, B. P. Yonkee, C. D. Pynn, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells,” Opt. Express 25(4), 3841–3849 (2017).
[Crossref]

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells,” Appl. Phys. Lett. 107(10), 101104 (2015).
[Crossref]

Faulkner, G.

H. Le Minh, D. O’Brien, G. Faulkner, L. Zeng, K. Lee, D. Jung, Y. Oh, and E. T. Won, “100-Mb/s NRZ visible light communications using a postequalized white LED,” IEEE Photonics Technol. Lett. 21(15), 1063–1065 (2009).
[Crossref]

Feezell, D.

A. Rashidi, M. Monavarian, A. Aragon, A. Rishinaramangalam, and D. Feezell, “Nonpolar m-Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth,” IEEE Electron Device Lett. 39(4), 520–523 (2018).
[Crossref]

M. Monavarian, A. Rashidi, A. A. Aragon, M. Nami, S. H. Oh, S. P. DenBaars, and D. Feezell, “Trade-off between bandwidth and efficiency in semipolar (20-2-1) InGaN/GaN single- and multiple-quantum-well light-emitting diodes,” Appl. Phys. Lett. 112(19), 191102 (2018).
[Crossref]

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Feezell, D. F.

D. F. Feezell, M. C. Schmidt, S. P. DenBaars, and S. Nakamura, “Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes,” MRS Bull. 34(5), 318–323 (2009).
[Crossref]

Ferreira, R. X.

M. S. Islim, R. X. Ferreira, X. He, E. Xie, S. Videv, S. Viola, S. Watson, N. Bamiedakis, R. V. Penty, I. H. White, and A. E. Kelly, “Towards 10 Gb/s orthogonal frequency division multiplexing-based visible light communication using a GaN violet micro-LED,” Photonics Res. 5(2), A35–A43 (2017).
[Crossref]

Fujito, K.

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20-21) GaN Substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Y. Zhao, J. Sonoda, C.-C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (1011) InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3(10), 102101 (2010).
[Crossref]

Gong, S.-H.

S.-H. Lim, Y.-H. Ko, C. Rodriguez, S.-H. Gong, and Y.-H. Cho, “Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures,” Light: Sci. Appl. 5(2), e16030 (2016).
[Crossref]

Hashimoto, R.

R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi C 11(3-4), 628–631 (2014).
[Crossref]

Hassan, Z.

He, X.

M. S. Islim, R. X. Ferreira, X. He, E. Xie, S. Videv, S. Viola, S. Watson, N. Bamiedakis, R. V. Penty, I. H. White, and A. E. Kelly, “Towards 10 Gb/s orthogonal frequency division multiplexing-based visible light communication using a GaN violet micro-LED,” Photonics Res. 5(2), A35–A43 (2017).
[Crossref]

Hsu, P. S.

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Huang, C.-Y.

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Huang, S.-C.

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Hwang, D.

Hwang, J.

R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi C 11(3-4), 628–631 (2014).
[Crossref]

Ichikawa, M.

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” J. Phys. D: Appl. Phys. 43(35), 354002 (2010).
[Crossref]

Islim, M. S.

M. S. Islim, R. X. Ferreira, X. He, E. Xie, S. Videv, S. Viola, S. Watson, N. Bamiedakis, R. V. Penty, I. H. White, and A. E. Kelly, “Towards 10 Gb/s orthogonal frequency division multiplexing-based visible light communication using a GaN violet micro-LED,” Photonics Res. 5(2), A35–A43 (2017).
[Crossref]

Iso, K.

H. Masui, H. Yamada, K. Iso, S. Nakamura, and S. P. DenBaars, “Optical polarization characteristics of In GaN/GaN light-emitting diodes fabricated on GaN substrates oriented between (10-10) and (10-1-1) planes,” Appl. Phys. Lett. 92(9), 091105 (2008).
[Crossref]

Jung, D.

H. Le Minh, D. O’Brien, G. Faulkner, L. Zeng, K. Lee, D. Jung, Y. Oh, and E. T. Won, “100-Mb/s NRZ visible light communications using a postequalized white LED,” IEEE Photonics Technol. Lett. 21(15), 1063–1065 (2009).
[Crossref]

Kang, J.

H. Li, P. Li, J. Kang, Z. Li, Z. Li, J. Li, X. Yi, and G. Wang, “Phosphor-free, color-tunable monolithic InGaN light-emitting diodes,” Appl. Phys. Express 6(10), 102103 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

Kawaguchi, Y.

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Kearns, J.

Keller, S.

B. Bonef, M. Catalano, C. Lund, S. P. Denbaars, S. Nakamura, U. K. Mishra, M. J. Kim, and S. Keller, “Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography,” Appl. Phys. Lett. 110(14), 143101 (2017).
[Crossref]

Kelly, A. E.

M. S. Islim, R. X. Ferreira, X. He, E. Xie, S. Videv, S. Viola, S. Watson, N. Bamiedakis, R. V. Penty, I. H. White, and A. E. Kelly, “Towards 10 Gb/s orthogonal frequency division multiplexing-based visible light communication using a GaN violet micro-LED,” Photonics Res. 5(2), A35–A43 (2017).
[Crossref]

Khoury, M.

M. Khoury, H. Li, P. Li, Y. C. Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Polarized monolithic white semipolar (20-21) InGaN light-emitting diodes grown on high quality (20-21) GaN/sapphire templates and its application to visible light communication,” Nano Energy 67, 104236 (2020).
[Crossref]

H. Li, M. S. Wong, M. Khoury, B. Bonef, H. Zhang, Y. C. Chow, P. Li, J. Kearns, A. A. Taylor, P. D. Mierry, Z. Hassan, S. Nakamura, and S. P. DenBaars, “Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template,” Opt. Express 27(17), 24154–24160 (2019).
[Crossref]

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref]

Kim, H.

J. H. Ryou, P. D. Yoder, J. P. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis, “Control of quantum-confined stark effect in InGaN-based quantum wells,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1080–1091 (2009).
[Crossref]

Kim, H. J.

J. H. Ryou, P. D. Yoder, J. P. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis, “Control of quantum-confined stark effect in InGaN-based quantum wells,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1080–1091 (2009).
[Crossref]

Kim, J. K.

E. F. Schubert and J. K. Kim, “The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes,” Science 308(5726), 1274–1278 (2005).
[Crossref]

Kim, M. J.

B. Bonef, M. Catalano, C. Lund, S. P. Denbaars, S. Nakamura, U. K. Mishra, M. J. Kim, and S. Keller, “Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography,” Appl. Phys. Lett. 110(14), 143101 (2017).
[Crossref]

Ko, Y.-H.

S.-H. Lim, Y.-H. Ko, C. Rodriguez, S.-H. Gong, and Y.-H. Cho, “Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures,” Light: Sci. Appl. 5(2), e16030 (2016).
[Crossref]

Koslow, I.

Y. Zhao, J. Sonoda, C.-C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (1011) InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3(10), 102101 (2010).
[Crossref]

Kowsz, S. J.

S. J. Kowsz, E. C. Young, B. P. Yonkee, C. D. Pynn, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells,” Opt. Express 25(4), 3841–3849 (2017).
[Crossref]

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells,” Appl. Phys. Lett. 107(10), 101104 (2015).
[Crossref]

Le Minh, H.

H. Le Minh, D. O’Brien, G. Faulkner, L. Zeng, K. Lee, D. Jung, Y. Oh, and E. T. Won, “100-Mb/s NRZ visible light communications using a postequalized white LED,” IEEE Photonics Technol. Lett. 21(15), 1063–1065 (2009).
[Crossref]

Lee, C.

Lee, K.

H. Le Minh, D. O’Brien, G. Faulkner, L. Zeng, K. Lee, D. Jung, Y. Oh, and E. T. Won, “100-Mb/s NRZ visible light communications using a postequalized white LED,” IEEE Photonics Technol. Lett. 21(15), 1063–1065 (2009).
[Crossref]

Ley, R.

Li, H.

M. Khoury, H. Li, P. Li, Y. C. Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Polarized monolithic white semipolar (20-21) InGaN light-emitting diodes grown on high quality (20-21) GaN/sapphire templates and its application to visible light communication,” Nano Energy 67, 104236 (2020).
[Crossref]

H. Li, M. S. Wong, M. Khoury, B. Bonef, H. Zhang, Y. C. Chow, P. Li, J. Kearns, A. A. Taylor, P. D. Mierry, Z. Hassan, S. Nakamura, and S. P. DenBaars, “Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template,” Opt. Express 27(17), 24154–24160 (2019).
[Crossref]

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Z. Li, J. Li, X. Yi, and G. Wang, “Phosphor-free, color-tunable monolithic InGaN light-emitting diodes,” Appl. Phys. Express 6(10), 102103 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

Li, J.

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Z. Li, J. Li, X. Yi, and G. Wang, “Phosphor-free, color-tunable monolithic InGaN light-emitting diodes,” Appl. Phys. Express 6(10), 102103 (2013).
[Crossref]

Li, P.

M. Khoury, H. Li, P. Li, Y. C. Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Polarized monolithic white semipolar (20-21) InGaN light-emitting diodes grown on high quality (20-21) GaN/sapphire templates and its application to visible light communication,” Nano Energy 67, 104236 (2020).
[Crossref]

H. Li, M. S. Wong, M. Khoury, B. Bonef, H. Zhang, Y. C. Chow, P. Li, J. Kearns, A. A. Taylor, P. D. Mierry, Z. Hassan, S. Nakamura, and S. P. DenBaars, “Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template,” Opt. Express 27(17), 24154–24160 (2019).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Z. Li, J. Li, X. Yi, and G. Wang, “Phosphor-free, color-tunable monolithic InGaN light-emitting diodes,” Appl. Phys. Express 6(10), 102103 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

Li, Z.

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Z. Li, J. Li, X. Yi, and G. Wang, “Phosphor-free, color-tunable monolithic InGaN light-emitting diodes,” Appl. Phys. Express 6(10), 102103 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Z. Li, J. Li, X. Yi, and G. Wang, “Phosphor-free, color-tunable monolithic InGaN light-emitting diodes,” Appl. Phys. Express 6(10), 102103 (2013).
[Crossref]

Lim, S.-H.

S.-H. Lim, Y.-H. Ko, C. Rodriguez, S.-H. Gong, and Y.-H. Cho, “Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures,” Light: Sci. Appl. 5(2), e16030 (2016).
[Crossref]

Liu, J. P.

J. H. Ryou, P. D. Yoder, J. P. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis, “Control of quantum-confined stark effect in InGaN-based quantum wells,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1080–1091 (2009).
[Crossref]

Lochner, Z.

J. H. Ryou, P. D. Yoder, J. P. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis, “Control of quantum-confined stark effect in InGaN-based quantum wells,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1080–1091 (2009).
[Crossref]

Lund, C.

B. Bonef, M. Catalano, C. Lund, S. P. Denbaars, S. Nakamura, U. K. Mishra, M. J. Kim, and S. Keller, “Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography,” Appl. Phys. Lett. 110(14), 143101 (2017).
[Crossref]

Masui, H.

H. Masui, H. Yamada, K. Iso, S. Nakamura, and S. P. DenBaars, “Optical polarization characteristics of In GaN/GaN light-emitting diodes fabricated on GaN substrates oriented between (10-10) and (10-1-1) planes,” Appl. Phys. Lett. 92(9), 091105 (2008).
[Crossref]

Mehari, S.

Mierry, P. D.

Mishra, U. K.

B. Bonef, M. Catalano, C. Lund, S. P. Denbaars, S. Nakamura, U. K. Mishra, M. J. Kim, and S. Keller, “Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography,” Appl. Phys. Lett. 110(14), 143101 (2017).
[Crossref]

Monavarian, M.

M. Monavarian, A. Rashidi, A. A. Aragon, M. Nami, S. H. Oh, S. P. DenBaars, and D. Feezell, “Trade-off between bandwidth and efficiency in semipolar (20-2-1) InGaN/GaN single- and multiple-quantum-well light-emitting diodes,” Appl. Phys. Lett. 112(19), 191102 (2018).
[Crossref]

A. Rashidi, M. Monavarian, A. Aragon, A. Rishinaramangalam, and D. Feezell, “Nonpolar m-Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth,” IEEE Electron Device Lett. 39(4), 520–523 (2018).
[Crossref]

Mughal, A. J.

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref]

Mukai, T.

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” J. Phys. D: Appl. Phys. 43(35), 354002 (2010).
[Crossref]

Nakamura, S.

M. Khoury, H. Li, P. Li, Y. C. Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Polarized monolithic white semipolar (20-21) InGaN light-emitting diodes grown on high quality (20-21) GaN/sapphire templates and its application to visible light communication,” Nano Energy 67, 104236 (2020).
[Crossref]

H. Li, M. S. Wong, M. Khoury, B. Bonef, H. Zhang, Y. C. Chow, P. Li, J. Kearns, A. A. Taylor, P. D. Mierry, Z. Hassan, S. Nakamura, and S. P. DenBaars, “Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template,” Opt. Express 27(17), 24154–24160 (2019).
[Crossref]

M. S. Wong, D. Hwang, A. I. Alhassan, C. Lee, R. Ley, S. Nakamura, and S. P. DenBaars, “High Efficiency of III-Nitride Micro-Light-Emitting Diodes by Sidewall Passivation Using Atomic Layer Deposition,” Opt. Express 26(16), 21324–21331 (2018).
[Crossref]

S. Mehari, D. A. Cohen, D. L. Becerra, S. Nakamura, and S. P. DenBaars, “Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 20-2-1 GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers,” Opt. Express 26(2), 1564–1572 (2018).
[Crossref]

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref]

S. J. Kowsz, E. C. Young, B. P. Yonkee, C. D. Pynn, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells,” Opt. Express 25(4), 3841–3849 (2017).
[Crossref]

B. Bonef, M. Catalano, C. Lund, S. P. Denbaars, S. Nakamura, U. K. Mishra, M. J. Kim, and S. Keller, “Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography,” Appl. Phys. Lett. 110(14), 143101 (2017).
[Crossref]

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells,” Appl. Phys. Lett. 107(10), 101104 (2015).
[Crossref]

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20-21) GaN Substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Y. Zhao, J. Sonoda, C.-C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (1011) InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3(10), 102101 (2010).
[Crossref]

D. F. Feezell, M. C. Schmidt, S. P. DenBaars, and S. Nakamura, “Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes,” MRS Bull. 34(5), 318–323 (2009).
[Crossref]

H. Masui, H. Yamada, K. Iso, S. Nakamura, and S. P. DenBaars, “Optical polarization characteristics of In GaN/GaN light-emitting diodes fabricated on GaN substrates oriented between (10-10) and (10-1-1) planes,” Appl. Phys. Lett. 92(9), 091105 (2008).
[Crossref]

S. Nakamura, “The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes,” Science 281(5379), 956–961 (1998).
[Crossref]

Nami, M.

M. Monavarian, A. Rashidi, A. A. Aragon, M. Nami, S. H. Oh, S. P. DenBaars, and D. Feezell, “Trade-off between bandwidth and efficiency in semipolar (20-2-1) InGaN/GaN single- and multiple-quantum-well light-emitting diodes,” Appl. Phys. Lett. 112(19), 191102 (2018).
[Crossref]

Narukawa, Y.

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” J. Phys. D: Appl. Phys. 43(35), 354002 (2010).
[Crossref]

Nunoue, S.

R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi C 11(3-4), 628–631 (2014).
[Crossref]

O’Brien, D.

H. Le Minh, D. O’Brien, G. Faulkner, L. Zeng, K. Lee, D. Jung, Y. Oh, and E. T. Won, “100-Mb/s NRZ visible light communications using a postequalized white LED,” IEEE Photonics Technol. Lett. 21(15), 1063–1065 (2009).
[Crossref]

Oh, S. H.

M. Monavarian, A. Rashidi, A. A. Aragon, M. Nami, S. H. Oh, S. P. DenBaars, and D. Feezell, “Trade-off between bandwidth and efficiency in semipolar (20-2-1) InGaN/GaN single- and multiple-quantum-well light-emitting diodes,” Appl. Phys. Lett. 112(19), 191102 (2018).
[Crossref]

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells,” Appl. Phys. Lett. 107(10), 101104 (2015).
[Crossref]

Oh, Y.

H. Le Minh, D. O’Brien, G. Faulkner, L. Zeng, K. Lee, D. Jung, Y. Oh, and E. T. Won, “100-Mb/s NRZ visible light communications using a postequalized white LED,” IEEE Photonics Technol. Lett. 21(15), 1063–1065 (2009).
[Crossref]

Ohta, H.

Y. Zhao, J. Sonoda, C.-C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (1011) InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3(10), 102101 (2010).
[Crossref]

Pan, C.-C.

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20-21) GaN Substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Y. Zhao, J. Sonoda, C.-C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (1011) InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3(10), 102101 (2010).
[Crossref]

Penty, R. V.

M. S. Islim, R. X. Ferreira, X. He, E. Xie, S. Videv, S. Viola, S. Watson, N. Bamiedakis, R. V. Penty, I. H. White, and A. E. Kelly, “Towards 10 Gb/s orthogonal frequency division multiplexing-based visible light communication using a GaN violet micro-LED,” Photonics Res. 5(2), A35–A43 (2017).
[Crossref]

Pinna, S.

M. Khoury, H. Li, P. Li, Y. C. Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Polarized monolithic white semipolar (20-21) InGaN light-emitting diodes grown on high quality (20-21) GaN/sapphire templates and its application to visible light communication,” Nano Energy 67, 104236 (2020).
[Crossref]

Pynn, C. D.

S. J. Kowsz, E. C. Young, B. P. Yonkee, C. D. Pynn, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells,” Opt. Express 25(4), 3841–3849 (2017).
[Crossref]

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells,” Appl. Phys. Lett. 107(10), 101104 (2015).
[Crossref]

Rashidi, A.

A. Rashidi, M. Monavarian, A. Aragon, A. Rishinaramangalam, and D. Feezell, “Nonpolar m-Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth,” IEEE Electron Device Lett. 39(4), 520–523 (2018).
[Crossref]

M. Monavarian, A. Rashidi, A. A. Aragon, M. Nami, S. H. Oh, S. P. DenBaars, and D. Feezell, “Trade-off between bandwidth and efficiency in semipolar (20-2-1) InGaN/GaN single- and multiple-quantum-well light-emitting diodes,” Appl. Phys. Lett. 112(19), 191102 (2018).
[Crossref]

Rishinaramangalam, A.

A. Rashidi, M. Monavarian, A. Aragon, A. Rishinaramangalam, and D. Feezell, “Nonpolar m-Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth,” IEEE Electron Device Lett. 39(4), 520–523 (2018).
[Crossref]

Rodriguez, C.

S.-H. Lim, Y.-H. Ko, C. Rodriguez, S.-H. Gong, and Y.-H. Cho, “Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures,” Light: Sci. Appl. 5(2), e16030 (2016).
[Crossref]

Ryou, J. H.

J. H. Ryou, P. D. Yoder, J. P. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis, “Control of quantum-confined stark effect in InGaN-based quantum wells,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1080–1091 (2009).
[Crossref]

Saito, S.

R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi C 11(3-4), 628–631 (2014).
[Crossref]

Samsudin, M. E.

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref]

Sanga, D.

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” J. Phys. D: Appl. Phys. 43(35), 354002 (2010).
[Crossref]

Sano, M.

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” J. Phys. D: Appl. Phys. 43(35), 354002 (2010).
[Crossref]

Schmidt, M. C.

D. F. Feezell, M. C. Schmidt, S. P. DenBaars, and S. Nakamura, “Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes,” MRS Bull. 34(5), 318–323 (2009).
[Crossref]

Schubert, E. F.

E. F. Schubert and J. K. Kim, “The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes,” Science 308(5726), 1274–1278 (2005).
[Crossref]

Song, J.

M. Khoury, H. Li, P. Li, Y. C. Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Polarized monolithic white semipolar (20-21) InGaN light-emitting diodes grown on high quality (20-21) GaN/sapphire templates and its application to visible light communication,” Nano Energy 67, 104236 (2020).
[Crossref]

Sonoda, J.

Y. Zhao, J. Sonoda, C.-C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (1011) InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3(10), 102101 (2010).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20-21) GaN Substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Speck, J. S.

M. Khoury, H. Li, P. Li, Y. C. Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Polarized monolithic white semipolar (20-21) InGaN light-emitting diodes grown on high quality (20-21) GaN/sapphire templates and its application to visible light communication,” Nano Energy 67, 104236 (2020).
[Crossref]

S. J. Kowsz, E. C. Young, B. P. Yonkee, C. D. Pynn, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells,” Opt. Express 25(4), 3841–3849 (2017).
[Crossref]

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref]

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells,” Appl. Phys. Lett. 107(10), 101104 (2015).
[Crossref]

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Tanaka, S.

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Taylor, A. A.

Van de Walle, C. G.

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Videv, S.

M. S. Islim, R. X. Ferreira, X. He, E. Xie, S. Videv, S. Viola, S. Watson, N. Bamiedakis, R. V. Penty, I. H. White, and A. E. Kelly, “Towards 10 Gb/s orthogonal frequency division multiplexing-based visible light communication using a GaN violet micro-LED,” Photonics Res. 5(2), A35–A43 (2017).
[Crossref]

Viola, S.

M. S. Islim, R. X. Ferreira, X. He, E. Xie, S. Videv, S. Viola, S. Watson, N. Bamiedakis, R. V. Penty, I. H. White, and A. E. Kelly, “Towards 10 Gb/s orthogonal frequency division multiplexing-based visible light communication using a GaN violet micro-LED,” Photonics Res. 5(2), A35–A43 (2017).
[Crossref]

Wang, G.

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Z. Li, J. Li, X. Yi, and G. Wang, “Phosphor-free, color-tunable monolithic InGaN light-emitting diodes,” Appl. Phys. Express 6(10), 102103 (2013).
[Crossref]

Watson, S.

M. S. Islim, R. X. Ferreira, X. He, E. Xie, S. Videv, S. Viola, S. Watson, N. Bamiedakis, R. V. Penty, I. H. White, and A. E. Kelly, “Towards 10 Gb/s orthogonal frequency division multiplexing-based visible light communication using a GaN violet micro-LED,” Photonics Res. 5(2), A35–A43 (2017).
[Crossref]

White, I. H.

M. S. Islim, R. X. Ferreira, X. He, E. Xie, S. Videv, S. Viola, S. Watson, N. Bamiedakis, R. V. Penty, I. H. White, and A. E. Kelly, “Towards 10 Gb/s orthogonal frequency division multiplexing-based visible light communication using a GaN violet micro-LED,” Photonics Res. 5(2), A35–A43 (2017).
[Crossref]

Won, E. T.

H. Le Minh, D. O’Brien, G. Faulkner, L. Zeng, K. Lee, D. Jung, Y. Oh, and E. T. Won, “100-Mb/s NRZ visible light communications using a postequalized white LED,” IEEE Photonics Technol. Lett. 21(15), 1063–1065 (2009).
[Crossref]

Wong, M. S.

Xie, E.

M. S. Islim, R. X. Ferreira, X. He, E. Xie, S. Videv, S. Viola, S. Watson, N. Bamiedakis, R. V. Penty, I. H. White, and A. E. Kelly, “Towards 10 Gb/s orthogonal frequency division multiplexing-based visible light communication using a GaN violet micro-LED,” Photonics Res. 5(2), A35–A43 (2017).
[Crossref]

Yamada, H.

H. Masui, H. Yamada, K. Iso, S. Nakamura, and S. P. DenBaars, “Optical polarization characteristics of In GaN/GaN light-emitting diodes fabricated on GaN substrates oriented between (10-10) and (10-1-1) planes,” Appl. Phys. Lett. 92(9), 091105 (2008).
[Crossref]

Yamamoto, S.

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20-21) GaN Substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Yan, Q.

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Yi, X.

H. Li, P. Li, J. Kang, Z. Li, Z. Li, J. Li, X. Yi, and G. Wang, “Phosphor-free, color-tunable monolithic InGaN light-emitting diodes,” Appl. Phys. Express 6(10), 102103 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

Yoder, P. D.

J. H. Ryou, P. D. Yoder, J. P. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis, “Control of quantum-confined stark effect in InGaN-based quantum wells,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1080–1091 (2009).
[Crossref]

Yonkee, B. P.

Young, E. C.

Zeng, L.

H. Le Minh, D. O’Brien, G. Faulkner, L. Zeng, K. Lee, D. Jung, Y. Oh, and E. T. Won, “100-Mb/s NRZ visible light communications using a postequalized white LED,” IEEE Photonics Technol. Lett. 21(15), 1063–1065 (2009).
[Crossref]

Zhang, H.

M. Khoury, H. Li, P. Li, Y. C. Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Polarized monolithic white semipolar (20-21) InGaN light-emitting diodes grown on high quality (20-21) GaN/sapphire templates and its application to visible light communication,” Nano Energy 67, 104236 (2020).
[Crossref]

H. Li, M. S. Wong, M. Khoury, B. Bonef, H. Zhang, Y. C. Chow, P. Li, J. Kearns, A. A. Taylor, P. D. Mierry, Z. Hassan, S. Nakamura, and S. P. DenBaars, “Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template,” Opt. Express 27(17), 24154–24160 (2019).
[Crossref]

Zhang, Y.

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

Zhao, Y.

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20-21) GaN Substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Y. Zhao, J. Sonoda, C.-C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (1011) InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3(10), 102101 (2010).
[Crossref]

ACS Appl. Mater. Interfaces (1)

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref]

Appl. Phys. Express (4)

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

Y. Zhao, J. Sonoda, C.-C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (1011) InGaN/GaN light-emitting diodes obtained by backside roughening technique,” Appl. Phys. Express 3(10), 102101 (2010).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Z. Li, J. Li, X. Yi, and G. Wang, “Phosphor-free, color-tunable monolithic InGaN light-emitting diodes,” Appl. Phys. Express 6(10), 102103 (2013).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20-21) GaN Substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Appl. Phys. Lett. (5)

M. Monavarian, A. Rashidi, A. A. Aragon, M. Nami, S. H. Oh, S. P. DenBaars, and D. Feezell, “Trade-off between bandwidth and efficiency in semipolar (20-2-1) InGaN/GaN single- and multiple-quantum-well light-emitting diodes,” Appl. Phys. Lett. 112(19), 191102 (2018).
[Crossref]

S. J. Kowsz, C. D. Pynn, S. H. Oh, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells,” Appl. Phys. Lett. 107(10), 101104 (2015).
[Crossref]

B. Bonef, M. Catalano, C. Lund, S. P. Denbaars, S. Nakamura, U. K. Mishra, M. J. Kim, and S. Keller, “Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography,” Appl. Phys. Lett. 110(14), 143101 (2017).
[Crossref]

H. Masui, H. Yamada, K. Iso, S. Nakamura, and S. P. DenBaars, “Optical polarization characteristics of In GaN/GaN light-emitting diodes fabricated on GaN substrates oriented between (10-10) and (10-1-1) planes,” Appl. Phys. Lett. 92(9), 091105 (2008).
[Crossref]

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

IEEE Electron Device Lett. (1)

A. Rashidi, M. Monavarian, A. Aragon, A. Rishinaramangalam, and D. Feezell, “Nonpolar m-Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth,” IEEE Electron Device Lett. 39(4), 520–523 (2018).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

J. H. Ryou, P. D. Yoder, J. P. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis, “Control of quantum-confined stark effect in InGaN-based quantum wells,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1080–1091 (2009).
[Crossref]

IEEE Photonics Technol. Lett. (1)

H. Le Minh, D. O’Brien, G. Faulkner, L. Zeng, K. Lee, D. Jung, Y. Oh, and E. T. Won, “100-Mb/s NRZ visible light communications using a postequalized white LED,” IEEE Photonics Technol. Lett. 21(15), 1063–1065 (2009).
[Crossref]

J. Phys. D: Appl. Phys. (1)

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White light emitting diodes with super-high luminous efficacy,” J. Phys. D: Appl. Phys. 43(35), 354002 (2010).
[Crossref]

Light: Sci. Appl. (1)

S.-H. Lim, Y.-H. Ko, C. Rodriguez, S.-H. Gong, and Y.-H. Cho, “Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures,” Light: Sci. Appl. 5(2), e16030 (2016).
[Crossref]

MRS Bull. (1)

D. F. Feezell, M. C. Schmidt, S. P. DenBaars, and S. Nakamura, “Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes,” MRS Bull. 34(5), 318–323 (2009).
[Crossref]

Nano Energy (1)

M. Khoury, H. Li, P. Li, Y. C. Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Polarized monolithic white semipolar (20-21) InGaN light-emitting diodes grown on high quality (20-21) GaN/sapphire templates and its application to visible light communication,” Nano Energy 67, 104236 (2020).
[Crossref]

Opt. Express (4)

Photonics Res. (1)

M. S. Islim, R. X. Ferreira, X. He, E. Xie, S. Videv, S. Viola, S. Watson, N. Bamiedakis, R. V. Penty, I. H. White, and A. E. Kelly, “Towards 10 Gb/s orthogonal frequency division multiplexing-based visible light communication using a GaN violet micro-LED,” Photonics Res. 5(2), A35–A43 (2017).
[Crossref]

Phys. Status Solidi C (1)

R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi C 11(3-4), 628–631 (2014).
[Crossref]

Science (2)

S. Nakamura, “The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes,” Science 281(5379), 956–961 (1998).
[Crossref]

E. F. Schubert and J. K. Kim, “The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes,” Science 308(5726), 1274–1278 (2005).
[Crossref]

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (5)

Fig. 1.
Fig. 1. (a) Side view distribution of In, Al and Ga in the active region and (b) The distribution of bin compositions of In and comparison with the binomial distribution in the blue and yellow QWs.
Fig. 2.
Fig. 2. Output power-current-voltage characteristics for the regular LEDs with a size of 0.1 mm2. The power is measured from the chips on wafer.
Fig. 3.
Fig. 3. (a) EL spectra versus current from 10 to 100 mA; (b) The peak wavelength of blue and yellow QWs and Iblue/Iyellow at various injection current.
Fig. 4.
Fig. 4. EL emission spectra with the polarizer aligned along [1-210] ($x^{\prime}$-direction) and [10-1-4] ($y^{\prime}$-direction).
Fig. 5.
Fig. 5. (a) Frequency response of µLED with a length of 60 µm and (b) 3 dB modulation bandwidths with increasing the current density from 0.1 to 2 kA/cm2 in different sizes µLEDs.

Metrics