Abstract

Terahertz (THz) waves at 9.7, 10.1 and 10.6 THz were generated via difference frequency generation in high-quality InxG1-xaSe mixed crystals with a relatively high indium compositions (x = 0.040, 0.048, 0.074) grown from an indium flux. The phase-matching angle for THz wave generation was measured for each indium content. As a result, it is confirmed that the incident angle of the excitation light satisfying the phase-matching condition is shifted to a higher angle with an increase in the indium content.

© 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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  1. W. Shi, Y. J. Ding, N. Fernelius, and K. Vodopyanov, “Efficient, tunable, and coherent 0.18–5.27-THz source based on GaSe crystal,” Opt. Lett. 27(16), 1454–1456 (2002).
    [Crossref]
  2. W. Shi and Y. Ding, “A monochromatic and high-power terahertz source tunable in the ranges of 2.7–38.4 and 58.2–3540 µm for variety of potential applications,” J. Appl. Phys. Lett. 84(10), 1635–1637 (2004).
    [Crossref]
  3. T. Tanabe, K. Suto, J. Nishizawa, and T. Sasaki, “Characteristics of terahertz-wave generation from GaSe crystals,” J. Phys. D: Appl. Phys. 37(2), 155–158 (2004).
    [Crossref]
  4. K. Saito, Y. Nagai, K. Yamamoto, K. Maeda, T. Tanabe, and Y. Oyama, “Terahertz Wave Generation via Nonlinear Parametric Process from ɛ-GaSe Single Crystals Grown by Liquid Phase Solution Method,” Opt. Photonics J. 04(08), 213–218 (2014).
    [Crossref]
  5. S. Takasuna, J. Shiogai, S. Matsuzaka, M. Kohda, Y. Oyama, and J. Nitta, “Weak antilocalization induced by Rashba spin-orbit interaction in layered III-VI compound semiconductor GaSe thin films,” Phys. Rev. B 96(16), 161303 (2017).
    [Crossref]
  6. V. G. Dmitriev, G. G. Gurzadyan, and D. N. Nikogosyan, Handbook of Nonlinear Optical Crystals. Springer, Berlin, pp. 166–169 (1997).
  7. C. W. Chen, T. T. Tang, S. H. Lin, J. Y. Huang, C.-S. Chang, P. K. Chung, S. T. Yen, and C. L. Pan, “Optical properties and potential applications of ɛ-GaSe at terahertz frequencies,” J. Opt. Soc. Am. B 26(9), A58–A56 (2009).
    [Crossref]
  8. J. Nishizawa, T. Sasaki, Y. Oyama, and T. Tanabe, “Aspects of point defects in coherent terahertz-wave spectroscopy,” Phys. B (Amsterdam, Neth.) 401-402, 677–681 (2007).
    [Crossref]
  9. H. Dezaki, T. Tanabe, J. Haiyan, and Y. Oyama, “Wide Frequency Tunable GaSe Terahertz Emitter under Collinear Phase Matching Condition,” Key Eng. Mater. 500, 58–61 (2012).
    [Crossref]
  10. A. Kasuya, Y. Sasaki, S. Hashimoto, Y. Nishina, and H. Iwasaki, “Stacking fault density and splitting of exciton states in ɛ-GaSe,” Solid State Commun. 55(1), 63–66 (1985).
    [Crossref]
  11. F. London, “The general theory of molecular forces,” Trans. Faraday Soc. 33, 8b (1937).
    [Crossref]
  12. T. Tanabe, S. Zhao, Y. Sato, and Y. Oyama, “Effect of adding Te to layered GaSe crystals to increase the van der Waals bonding force,” J. Appl. Phys. 122(16), 165105 (2017).
    [Crossref]
  13. J. Guo, D. J. Li, J. J. Xie, L. M. Zhang, Z. S. Feng, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Limiting pump intensity for sulfur-doped gallium selenide crystals,” Laser Phys. Lett. 11(5), 055401 (2014).
    [Crossref]
  14. K. A. Kokh, J. F. Molloy, M. Naftaly, Y. M. Andreev, V. A. Svetlichnyi, G. V. Lanskii, I. N. Lapin, T. I. Izaak, and A. E. Kokh, “Growth and optical properties of solid solution crystals GaSe1-xSx,” Mater. Chem. Phys. 154, 152–157 (2015).
    [Crossref]
  15. S. Zhao, Y. Sato, K. Maeda, T. Tanabe, H. Ohtani, and Y. Oyama, “Liquid phase growth of GaSe1-xTex mixed crystals by temperature difference method under controlled vapor pressure,” J. Cryst. Growth 467, 107–110 (2017).
    [Crossref]
  16. S. A. Ku, W. C. Chu, C. W. Luo, Y. M. Andreev, G. Lanskii, A. Shaidukoi, T. Izaak, V. Svetlichnyi, K. H. Wu, and T. Kobayashi, “Optimal Te-doping in GaSe for non-linear applications,” Opt. Express 20(5), 5029–5037 (2012).
    [Crossref]
  17. J. Guo, J. J. Xie, L. M. Zhang, D. J. Li, G. L. Yang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. V. Shabalina, A. V. Shaiduko, and V. A. Svetlichnyi, “Characterization of Bridgman grown GaSe:Al crystals,” CrystEngComm 15(32), 6323–6328 (2013).
    [Crossref]
  18. Y. K. Hsu, W. C. Chen, J. Y. Huang, C. L. Pan, J. Y. Zhang, and C. S. Chang, “Erbium doped GaSe crystal for mid-IR applications,” Opt. Express 14(12), 5484–5491 (2006).
    [Crossref]
  19. N. Lei, Y. Sato, T. Tanabe, K. Maeda, and Y. Oyama, “Transition metal doping of GaSe implemented with low temperature liquid phase growth,” J. Cryst. Growth 460, 94–97 (2017).
    [Crossref]
  20. Y. Sato, C. Tang, K. Watanabe, T. Tanabe, and Y. Oyama, “Characteristics of 2D Ge-doped GaSe grown by low temperature liquid phase deposition under a controlled Se vapor pressure,” J. Nanosci. Curr. Res. 03(02), 1000128 (2018).
    [Crossref]
  21. J. Guo, J. J. Xie, D. J. Li, G. L. Yang, F. Chen, C. R. Wang, L. M. Zhang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, and V. A. Svetlichnyi, “Doped GaSe crystals for laser frequency conversion,” Light: Sci. Appl. 4(12), e362 (2015).
    [Crossref]
  22. V. G. Voevodin, O. V. Voevodina, S. A. Bereznaya, Z. V. Korotchenko, A. N. Morozov, S. Y. Sarkisov, N. C. Fernelius, and J. T. Goldstein, “Large single crystals of gallium selenide: growing, doping by In and characterization,” Opt. Mater. 26(4), 495–499 (2004).
    [Crossref]
  23. Z. S. Feng, Z. H. Kang, F. G. Wu, J. Y. Gao, Y. Jiang, H. Z. Zhang, Y. M. Andreev, G. V. Lanskii, V. V. Atuchin, and T. A. Gavrilova, “SHG in doped GaSe:In crystals,” Opt. Express 16(13), 9978–9985 (2008).
    [Crossref]
  24. D. R. Suhre, N. B. Singh, V. Balakrishna, N. C. Fernelius, and F. K. Hopkins, “Improved crystal quality and harmonic generation in GaSe doped with indium,” Opt. Lett. 22(11), 775–777 (1997).
    [Crossref]
  25. Y. Sato, C. Tang, K. Watanabe, J. Ohsaki, T. Yamamoto, N. Tezuka, T. Tanabe, and Y. Oyama, “Terahertz wave generation via difference frequency generation by using 2D InxGa1-xSe crystal grown from an indium flux,” Opt. Express 28(1), 472–477 (2020).
    [Crossref]
  26. S. Das, C. Ghosh, S. Gangopadhyay, U. Chatterjee, G. C. Bhar, V. G. Voevodin, and O. G. Voevodina, “Tunable coherent infrared source from 5–16 µm based on difference-frequency mixing in an indium-doped GaSe crystal,” J. Opt. Soc. Am. B 23(2), 282–288 (2006).
    [Crossref]
  27. O. Madelung, Semiconductors: Data Handbook, 3rd ed.; (Springer, Berlin, 2004) p. 524 & p. 531.
  28. Y. Sato, C. Tang, K. Watanabe, M. Nakajima, T. Yamamoto, N. Tezuka, T. Tanabe, and Y. Oyama, “Optical and electrical properties of InxGa1-xSe mixed crystal grown from indium flux by the traveling heater method,” J. Electron. Mater., (Submitted)
  29. R. L. Aggarwal and B. Lax, 1977 Nonlinear Infrared Generation. Springer, New York, p. 28 (1977).
  30. W. Shi, Y. J. Ding, X. Mu, and N. Fernelius, “Tunable and coherent nanosecond radiation in the range of 2.7–28.7 mm based on difference-frequency generation in gallium selenide,” Appl. Phys. Lett. 80(21), 3889–3891 (2002).
    [Crossref]

2020 (1)

2018 (1)

Y. Sato, C. Tang, K. Watanabe, T. Tanabe, and Y. Oyama, “Characteristics of 2D Ge-doped GaSe grown by low temperature liquid phase deposition under a controlled Se vapor pressure,” J. Nanosci. Curr. Res. 03(02), 1000128 (2018).
[Crossref]

2017 (4)

S. Takasuna, J. Shiogai, S. Matsuzaka, M. Kohda, Y. Oyama, and J. Nitta, “Weak antilocalization induced by Rashba spin-orbit interaction in layered III-VI compound semiconductor GaSe thin films,” Phys. Rev. B 96(16), 161303 (2017).
[Crossref]

T. Tanabe, S. Zhao, Y. Sato, and Y. Oyama, “Effect of adding Te to layered GaSe crystals to increase the van der Waals bonding force,” J. Appl. Phys. 122(16), 165105 (2017).
[Crossref]

S. Zhao, Y. Sato, K. Maeda, T. Tanabe, H. Ohtani, and Y. Oyama, “Liquid phase growth of GaSe1-xTex mixed crystals by temperature difference method under controlled vapor pressure,” J. Cryst. Growth 467, 107–110 (2017).
[Crossref]

N. Lei, Y. Sato, T. Tanabe, K. Maeda, and Y. Oyama, “Transition metal doping of GaSe implemented with low temperature liquid phase growth,” J. Cryst. Growth 460, 94–97 (2017).
[Crossref]

2015 (2)

K. A. Kokh, J. F. Molloy, M. Naftaly, Y. M. Andreev, V. A. Svetlichnyi, G. V. Lanskii, I. N. Lapin, T. I. Izaak, and A. E. Kokh, “Growth and optical properties of solid solution crystals GaSe1-xSx,” Mater. Chem. Phys. 154, 152–157 (2015).
[Crossref]

J. Guo, J. J. Xie, D. J. Li, G. L. Yang, F. Chen, C. R. Wang, L. M. Zhang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, and V. A. Svetlichnyi, “Doped GaSe crystals for laser frequency conversion,” Light: Sci. Appl. 4(12), e362 (2015).
[Crossref]

2014 (2)

J. Guo, D. J. Li, J. J. Xie, L. M. Zhang, Z. S. Feng, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Limiting pump intensity for sulfur-doped gallium selenide crystals,” Laser Phys. Lett. 11(5), 055401 (2014).
[Crossref]

K. Saito, Y. Nagai, K. Yamamoto, K. Maeda, T. Tanabe, and Y. Oyama, “Terahertz Wave Generation via Nonlinear Parametric Process from ɛ-GaSe Single Crystals Grown by Liquid Phase Solution Method,” Opt. Photonics J. 04(08), 213–218 (2014).
[Crossref]

2013 (1)

J. Guo, J. J. Xie, L. M. Zhang, D. J. Li, G. L. Yang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. V. Shabalina, A. V. Shaiduko, and V. A. Svetlichnyi, “Characterization of Bridgman grown GaSe:Al crystals,” CrystEngComm 15(32), 6323–6328 (2013).
[Crossref]

2012 (2)

S. A. Ku, W. C. Chu, C. W. Luo, Y. M. Andreev, G. Lanskii, A. Shaidukoi, T. Izaak, V. Svetlichnyi, K. H. Wu, and T. Kobayashi, “Optimal Te-doping in GaSe for non-linear applications,” Opt. Express 20(5), 5029–5037 (2012).
[Crossref]

H. Dezaki, T. Tanabe, J. Haiyan, and Y. Oyama, “Wide Frequency Tunable GaSe Terahertz Emitter under Collinear Phase Matching Condition,” Key Eng. Mater. 500, 58–61 (2012).
[Crossref]

2009 (1)

2008 (1)

2007 (1)

J. Nishizawa, T. Sasaki, Y. Oyama, and T. Tanabe, “Aspects of point defects in coherent terahertz-wave spectroscopy,” Phys. B (Amsterdam, Neth.) 401-402, 677–681 (2007).
[Crossref]

2006 (2)

2004 (3)

V. G. Voevodin, O. V. Voevodina, S. A. Bereznaya, Z. V. Korotchenko, A. N. Morozov, S. Y. Sarkisov, N. C. Fernelius, and J. T. Goldstein, “Large single crystals of gallium selenide: growing, doping by In and characterization,” Opt. Mater. 26(4), 495–499 (2004).
[Crossref]

W. Shi and Y. Ding, “A monochromatic and high-power terahertz source tunable in the ranges of 2.7–38.4 and 58.2–3540 µm for variety of potential applications,” J. Appl. Phys. Lett. 84(10), 1635–1637 (2004).
[Crossref]

T. Tanabe, K. Suto, J. Nishizawa, and T. Sasaki, “Characteristics of terahertz-wave generation from GaSe crystals,” J. Phys. D: Appl. Phys. 37(2), 155–158 (2004).
[Crossref]

2002 (2)

W. Shi, Y. J. Ding, N. Fernelius, and K. Vodopyanov, “Efficient, tunable, and coherent 0.18–5.27-THz source based on GaSe crystal,” Opt. Lett. 27(16), 1454–1456 (2002).
[Crossref]

W. Shi, Y. J. Ding, X. Mu, and N. Fernelius, “Tunable and coherent nanosecond radiation in the range of 2.7–28.7 mm based on difference-frequency generation in gallium selenide,” Appl. Phys. Lett. 80(21), 3889–3891 (2002).
[Crossref]

1997 (1)

1985 (1)

A. Kasuya, Y. Sasaki, S. Hashimoto, Y. Nishina, and H. Iwasaki, “Stacking fault density and splitting of exciton states in ɛ-GaSe,” Solid State Commun. 55(1), 63–66 (1985).
[Crossref]

1937 (1)

F. London, “The general theory of molecular forces,” Trans. Faraday Soc. 33, 8b (1937).
[Crossref]

Aggarwal, R. L.

R. L. Aggarwal and B. Lax, 1977 Nonlinear Infrared Generation. Springer, New York, p. 28 (1977).

Andreev, Y. M.

K. A. Kokh, J. F. Molloy, M. Naftaly, Y. M. Andreev, V. A. Svetlichnyi, G. V. Lanskii, I. N. Lapin, T. I. Izaak, and A. E. Kokh, “Growth and optical properties of solid solution crystals GaSe1-xSx,” Mater. Chem. Phys. 154, 152–157 (2015).
[Crossref]

J. Guo, J. J. Xie, D. J. Li, G. L. Yang, F. Chen, C. R. Wang, L. M. Zhang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, and V. A. Svetlichnyi, “Doped GaSe crystals for laser frequency conversion,” Light: Sci. Appl. 4(12), e362 (2015).
[Crossref]

J. Guo, D. J. Li, J. J. Xie, L. M. Zhang, Z. S. Feng, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Limiting pump intensity for sulfur-doped gallium selenide crystals,” Laser Phys. Lett. 11(5), 055401 (2014).
[Crossref]

J. Guo, J. J. Xie, L. M. Zhang, D. J. Li, G. L. Yang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. V. Shabalina, A. V. Shaiduko, and V. A. Svetlichnyi, “Characterization of Bridgman grown GaSe:Al crystals,” CrystEngComm 15(32), 6323–6328 (2013).
[Crossref]

S. A. Ku, W. C. Chu, C. W. Luo, Y. M. Andreev, G. Lanskii, A. Shaidukoi, T. Izaak, V. Svetlichnyi, K. H. Wu, and T. Kobayashi, “Optimal Te-doping in GaSe for non-linear applications,” Opt. Express 20(5), 5029–5037 (2012).
[Crossref]

Z. S. Feng, Z. H. Kang, F. G. Wu, J. Y. Gao, Y. Jiang, H. Z. Zhang, Y. M. Andreev, G. V. Lanskii, V. V. Atuchin, and T. A. Gavrilova, “SHG in doped GaSe:In crystals,” Opt. Express 16(13), 9978–9985 (2008).
[Crossref]

Atuchin, V. V.

Balakrishna, V.

Bereznaya, S. A.

V. G. Voevodin, O. V. Voevodina, S. A. Bereznaya, Z. V. Korotchenko, A. N. Morozov, S. Y. Sarkisov, N. C. Fernelius, and J. T. Goldstein, “Large single crystals of gallium selenide: growing, doping by In and characterization,” Opt. Mater. 26(4), 495–499 (2004).
[Crossref]

Bhar, G. C.

Chang, C. S.

Chang, C.-S.

Chatterjee, U.

Chen, C. W.

Chen, F.

J. Guo, J. J. Xie, D. J. Li, G. L. Yang, F. Chen, C. R. Wang, L. M. Zhang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, and V. A. Svetlichnyi, “Doped GaSe crystals for laser frequency conversion,” Light: Sci. Appl. 4(12), e362 (2015).
[Crossref]

Chen, W. C.

Chu, W. C.

Chung, P. K.

Das, S.

Dezaki, H.

H. Dezaki, T. Tanabe, J. Haiyan, and Y. Oyama, “Wide Frequency Tunable GaSe Terahertz Emitter under Collinear Phase Matching Condition,” Key Eng. Mater. 500, 58–61 (2012).
[Crossref]

Ding, Y.

W. Shi and Y. Ding, “A monochromatic and high-power terahertz source tunable in the ranges of 2.7–38.4 and 58.2–3540 µm for variety of potential applications,” J. Appl. Phys. Lett. 84(10), 1635–1637 (2004).
[Crossref]

Ding, Y. J.

W. Shi, Y. J. Ding, N. Fernelius, and K. Vodopyanov, “Efficient, tunable, and coherent 0.18–5.27-THz source based on GaSe crystal,” Opt. Lett. 27(16), 1454–1456 (2002).
[Crossref]

W. Shi, Y. J. Ding, X. Mu, and N. Fernelius, “Tunable and coherent nanosecond radiation in the range of 2.7–28.7 mm based on difference-frequency generation in gallium selenide,” Appl. Phys. Lett. 80(21), 3889–3891 (2002).
[Crossref]

Dmitriev, V. G.

V. G. Dmitriev, G. G. Gurzadyan, and D. N. Nikogosyan, Handbook of Nonlinear Optical Crystals. Springer, Berlin, pp. 166–169 (1997).

Feng, Z. S.

J. Guo, D. J. Li, J. J. Xie, L. M. Zhang, Z. S. Feng, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Limiting pump intensity for sulfur-doped gallium selenide crystals,” Laser Phys. Lett. 11(5), 055401 (2014).
[Crossref]

Z. S. Feng, Z. H. Kang, F. G. Wu, J. Y. Gao, Y. Jiang, H. Z. Zhang, Y. M. Andreev, G. V. Lanskii, V. V. Atuchin, and T. A. Gavrilova, “SHG in doped GaSe:In crystals,” Opt. Express 16(13), 9978–9985 (2008).
[Crossref]

Fernelius, N.

W. Shi, Y. J. Ding, N. Fernelius, and K. Vodopyanov, “Efficient, tunable, and coherent 0.18–5.27-THz source based on GaSe crystal,” Opt. Lett. 27(16), 1454–1456 (2002).
[Crossref]

W. Shi, Y. J. Ding, X. Mu, and N. Fernelius, “Tunable and coherent nanosecond radiation in the range of 2.7–28.7 mm based on difference-frequency generation in gallium selenide,” Appl. Phys. Lett. 80(21), 3889–3891 (2002).
[Crossref]

Fernelius, N. C.

V. G. Voevodin, O. V. Voevodina, S. A. Bereznaya, Z. V. Korotchenko, A. N. Morozov, S. Y. Sarkisov, N. C. Fernelius, and J. T. Goldstein, “Large single crystals of gallium selenide: growing, doping by In and characterization,” Opt. Mater. 26(4), 495–499 (2004).
[Crossref]

D. R. Suhre, N. B. Singh, V. Balakrishna, N. C. Fernelius, and F. K. Hopkins, “Improved crystal quality and harmonic generation in GaSe doped with indium,” Opt. Lett. 22(11), 775–777 (1997).
[Crossref]

Gangopadhyay, S.

Gao, J. Y.

Gavrilova, T. A.

Ghosh, C.

Goldstein, J. T.

V. G. Voevodin, O. V. Voevodina, S. A. Bereznaya, Z. V. Korotchenko, A. N. Morozov, S. Y. Sarkisov, N. C. Fernelius, and J. T. Goldstein, “Large single crystals of gallium selenide: growing, doping by In and characterization,” Opt. Mater. 26(4), 495–499 (2004).
[Crossref]

Guo, J.

J. Guo, J. J. Xie, D. J. Li, G. L. Yang, F. Chen, C. R. Wang, L. M. Zhang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, and V. A. Svetlichnyi, “Doped GaSe crystals for laser frequency conversion,” Light: Sci. Appl. 4(12), e362 (2015).
[Crossref]

J. Guo, D. J. Li, J. J. Xie, L. M. Zhang, Z. S. Feng, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Limiting pump intensity for sulfur-doped gallium selenide crystals,” Laser Phys. Lett. 11(5), 055401 (2014).
[Crossref]

J. Guo, J. J. Xie, L. M. Zhang, D. J. Li, G. L. Yang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. V. Shabalina, A. V. Shaiduko, and V. A. Svetlichnyi, “Characterization of Bridgman grown GaSe:Al crystals,” CrystEngComm 15(32), 6323–6328 (2013).
[Crossref]

Gurzadyan, G. G.

V. G. Dmitriev, G. G. Gurzadyan, and D. N. Nikogosyan, Handbook of Nonlinear Optical Crystals. Springer, Berlin, pp. 166–169 (1997).

Haiyan, J.

H. Dezaki, T. Tanabe, J. Haiyan, and Y. Oyama, “Wide Frequency Tunable GaSe Terahertz Emitter under Collinear Phase Matching Condition,” Key Eng. Mater. 500, 58–61 (2012).
[Crossref]

Hashimoto, S.

A. Kasuya, Y. Sasaki, S. Hashimoto, Y. Nishina, and H. Iwasaki, “Stacking fault density and splitting of exciton states in ɛ-GaSe,” Solid State Commun. 55(1), 63–66 (1985).
[Crossref]

Hopkins, F. K.

Hsu, Y. K.

Huang, J. Y.

Iwasaki, H.

A. Kasuya, Y. Sasaki, S. Hashimoto, Y. Nishina, and H. Iwasaki, “Stacking fault density and splitting of exciton states in ɛ-GaSe,” Solid State Commun. 55(1), 63–66 (1985).
[Crossref]

Izaak, T.

Izaak, T. I.

K. A. Kokh, J. F. Molloy, M. Naftaly, Y. M. Andreev, V. A. Svetlichnyi, G. V. Lanskii, I. N. Lapin, T. I. Izaak, and A. E. Kokh, “Growth and optical properties of solid solution crystals GaSe1-xSx,” Mater. Chem. Phys. 154, 152–157 (2015).
[Crossref]

Jiang, Y.

Kang, Z. H.

Kasuya, A.

A. Kasuya, Y. Sasaki, S. Hashimoto, Y. Nishina, and H. Iwasaki, “Stacking fault density and splitting of exciton states in ɛ-GaSe,” Solid State Commun. 55(1), 63–66 (1985).
[Crossref]

Kobayashi, T.

Kohda, M.

S. Takasuna, J. Shiogai, S. Matsuzaka, M. Kohda, Y. Oyama, and J. Nitta, “Weak antilocalization induced by Rashba spin-orbit interaction in layered III-VI compound semiconductor GaSe thin films,” Phys. Rev. B 96(16), 161303 (2017).
[Crossref]

Kokh, A. E.

K. A. Kokh, J. F. Molloy, M. Naftaly, Y. M. Andreev, V. A. Svetlichnyi, G. V. Lanskii, I. N. Lapin, T. I. Izaak, and A. E. Kokh, “Growth and optical properties of solid solution crystals GaSe1-xSx,” Mater. Chem. Phys. 154, 152–157 (2015).
[Crossref]

Kokh, K. A.

K. A. Kokh, J. F. Molloy, M. Naftaly, Y. M. Andreev, V. A. Svetlichnyi, G. V. Lanskii, I. N. Lapin, T. I. Izaak, and A. E. Kokh, “Growth and optical properties of solid solution crystals GaSe1-xSx,” Mater. Chem. Phys. 154, 152–157 (2015).
[Crossref]

J. Guo, J. J. Xie, D. J. Li, G. L. Yang, F. Chen, C. R. Wang, L. M. Zhang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, and V. A. Svetlichnyi, “Doped GaSe crystals for laser frequency conversion,” Light: Sci. Appl. 4(12), e362 (2015).
[Crossref]

J. Guo, D. J. Li, J. J. Xie, L. M. Zhang, Z. S. Feng, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Limiting pump intensity for sulfur-doped gallium selenide crystals,” Laser Phys. Lett. 11(5), 055401 (2014).
[Crossref]

J. Guo, J. J. Xie, L. M. Zhang, D. J. Li, G. L. Yang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. V. Shabalina, A. V. Shaiduko, and V. A. Svetlichnyi, “Characterization of Bridgman grown GaSe:Al crystals,” CrystEngComm 15(32), 6323–6328 (2013).
[Crossref]

Korotchenko, Z. V.

V. G. Voevodin, O. V. Voevodina, S. A. Bereznaya, Z. V. Korotchenko, A. N. Morozov, S. Y. Sarkisov, N. C. Fernelius, and J. T. Goldstein, “Large single crystals of gallium selenide: growing, doping by In and characterization,” Opt. Mater. 26(4), 495–499 (2004).
[Crossref]

Ku, S. A.

Lanskii, G.

Lanskii, G. V.

J. Guo, J. J. Xie, D. J. Li, G. L. Yang, F. Chen, C. R. Wang, L. M. Zhang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, and V. A. Svetlichnyi, “Doped GaSe crystals for laser frequency conversion,” Light: Sci. Appl. 4(12), e362 (2015).
[Crossref]

K. A. Kokh, J. F. Molloy, M. Naftaly, Y. M. Andreev, V. A. Svetlichnyi, G. V. Lanskii, I. N. Lapin, T. I. Izaak, and A. E. Kokh, “Growth and optical properties of solid solution crystals GaSe1-xSx,” Mater. Chem. Phys. 154, 152–157 (2015).
[Crossref]

J. Guo, D. J. Li, J. J. Xie, L. M. Zhang, Z. S. Feng, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Limiting pump intensity for sulfur-doped gallium selenide crystals,” Laser Phys. Lett. 11(5), 055401 (2014).
[Crossref]

J. Guo, J. J. Xie, L. M. Zhang, D. J. Li, G. L. Yang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. V. Shabalina, A. V. Shaiduko, and V. A. Svetlichnyi, “Characterization of Bridgman grown GaSe:Al crystals,” CrystEngComm 15(32), 6323–6328 (2013).
[Crossref]

Z. S. Feng, Z. H. Kang, F. G. Wu, J. Y. Gao, Y. Jiang, H. Z. Zhang, Y. M. Andreev, G. V. Lanskii, V. V. Atuchin, and T. A. Gavrilova, “SHG in doped GaSe:In crystals,” Opt. Express 16(13), 9978–9985 (2008).
[Crossref]

Lapin, I. N.

K. A. Kokh, J. F. Molloy, M. Naftaly, Y. M. Andreev, V. A. Svetlichnyi, G. V. Lanskii, I. N. Lapin, T. I. Izaak, and A. E. Kokh, “Growth and optical properties of solid solution crystals GaSe1-xSx,” Mater. Chem. Phys. 154, 152–157 (2015).
[Crossref]

Lax, B.

R. L. Aggarwal and B. Lax, 1977 Nonlinear Infrared Generation. Springer, New York, p. 28 (1977).

Lei, N.

N. Lei, Y. Sato, T. Tanabe, K. Maeda, and Y. Oyama, “Transition metal doping of GaSe implemented with low temperature liquid phase growth,” J. Cryst. Growth 460, 94–97 (2017).
[Crossref]

Li, D. J.

J. Guo, J. J. Xie, D. J. Li, G. L. Yang, F. Chen, C. R. Wang, L. M. Zhang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, and V. A. Svetlichnyi, “Doped GaSe crystals for laser frequency conversion,” Light: Sci. Appl. 4(12), e362 (2015).
[Crossref]

J. Guo, D. J. Li, J. J. Xie, L. M. Zhang, Z. S. Feng, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Limiting pump intensity for sulfur-doped gallium selenide crystals,” Laser Phys. Lett. 11(5), 055401 (2014).
[Crossref]

J. Guo, J. J. Xie, L. M. Zhang, D. J. Li, G. L. Yang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. V. Shabalina, A. V. Shaiduko, and V. A. Svetlichnyi, “Characterization of Bridgman grown GaSe:Al crystals,” CrystEngComm 15(32), 6323–6328 (2013).
[Crossref]

Lin, S. H.

London, F.

F. London, “The general theory of molecular forces,” Trans. Faraday Soc. 33, 8b (1937).
[Crossref]

Luo, C. W.

Madelung, O.

O. Madelung, Semiconductors: Data Handbook, 3rd ed.; (Springer, Berlin, 2004) p. 524 & p. 531.

Maeda, K.

S. Zhao, Y. Sato, K. Maeda, T. Tanabe, H. Ohtani, and Y. Oyama, “Liquid phase growth of GaSe1-xTex mixed crystals by temperature difference method under controlled vapor pressure,” J. Cryst. Growth 467, 107–110 (2017).
[Crossref]

N. Lei, Y. Sato, T. Tanabe, K. Maeda, and Y. Oyama, “Transition metal doping of GaSe implemented with low temperature liquid phase growth,” J. Cryst. Growth 460, 94–97 (2017).
[Crossref]

K. Saito, Y. Nagai, K. Yamamoto, K. Maeda, T. Tanabe, and Y. Oyama, “Terahertz Wave Generation via Nonlinear Parametric Process from ɛ-GaSe Single Crystals Grown by Liquid Phase Solution Method,” Opt. Photonics J. 04(08), 213–218 (2014).
[Crossref]

Matsuzaka, S.

S. Takasuna, J. Shiogai, S. Matsuzaka, M. Kohda, Y. Oyama, and J. Nitta, “Weak antilocalization induced by Rashba spin-orbit interaction in layered III-VI compound semiconductor GaSe thin films,” Phys. Rev. B 96(16), 161303 (2017).
[Crossref]

Molloy, J. F.

K. A. Kokh, J. F. Molloy, M. Naftaly, Y. M. Andreev, V. A. Svetlichnyi, G. V. Lanskii, I. N. Lapin, T. I. Izaak, and A. E. Kokh, “Growth and optical properties of solid solution crystals GaSe1-xSx,” Mater. Chem. Phys. 154, 152–157 (2015).
[Crossref]

Morozov, A. N.

V. G. Voevodin, O. V. Voevodina, S. A. Bereznaya, Z. V. Korotchenko, A. N. Morozov, S. Y. Sarkisov, N. C. Fernelius, and J. T. Goldstein, “Large single crystals of gallium selenide: growing, doping by In and characterization,” Opt. Mater. 26(4), 495–499 (2004).
[Crossref]

Mu, X.

W. Shi, Y. J. Ding, X. Mu, and N. Fernelius, “Tunable and coherent nanosecond radiation in the range of 2.7–28.7 mm based on difference-frequency generation in gallium selenide,” Appl. Phys. Lett. 80(21), 3889–3891 (2002).
[Crossref]

Naftaly, M.

K. A. Kokh, J. F. Molloy, M. Naftaly, Y. M. Andreev, V. A. Svetlichnyi, G. V. Lanskii, I. N. Lapin, T. I. Izaak, and A. E. Kokh, “Growth and optical properties of solid solution crystals GaSe1-xSx,” Mater. Chem. Phys. 154, 152–157 (2015).
[Crossref]

Nagai, Y.

K. Saito, Y. Nagai, K. Yamamoto, K. Maeda, T. Tanabe, and Y. Oyama, “Terahertz Wave Generation via Nonlinear Parametric Process from ɛ-GaSe Single Crystals Grown by Liquid Phase Solution Method,” Opt. Photonics J. 04(08), 213–218 (2014).
[Crossref]

Nakajima, M.

Y. Sato, C. Tang, K. Watanabe, M. Nakajima, T. Yamamoto, N. Tezuka, T. Tanabe, and Y. Oyama, “Optical and electrical properties of InxGa1-xSe mixed crystal grown from indium flux by the traveling heater method,” J. Electron. Mater., (Submitted)

Nikogosyan, D. N.

V. G. Dmitriev, G. G. Gurzadyan, and D. N. Nikogosyan, Handbook of Nonlinear Optical Crystals. Springer, Berlin, pp. 166–169 (1997).

Nishina, Y.

A. Kasuya, Y. Sasaki, S. Hashimoto, Y. Nishina, and H. Iwasaki, “Stacking fault density and splitting of exciton states in ɛ-GaSe,” Solid State Commun. 55(1), 63–66 (1985).
[Crossref]

Nishizawa, J.

J. Nishizawa, T. Sasaki, Y. Oyama, and T. Tanabe, “Aspects of point defects in coherent terahertz-wave spectroscopy,” Phys. B (Amsterdam, Neth.) 401-402, 677–681 (2007).
[Crossref]

T. Tanabe, K. Suto, J. Nishizawa, and T. Sasaki, “Characteristics of terahertz-wave generation from GaSe crystals,” J. Phys. D: Appl. Phys. 37(2), 155–158 (2004).
[Crossref]

Nitta, J.

S. Takasuna, J. Shiogai, S. Matsuzaka, M. Kohda, Y. Oyama, and J. Nitta, “Weak antilocalization induced by Rashba spin-orbit interaction in layered III-VI compound semiconductor GaSe thin films,” Phys. Rev. B 96(16), 161303 (2017).
[Crossref]

Ohsaki, J.

Ohtani, H.

S. Zhao, Y. Sato, K. Maeda, T. Tanabe, H. Ohtani, and Y. Oyama, “Liquid phase growth of GaSe1-xTex mixed crystals by temperature difference method under controlled vapor pressure,” J. Cryst. Growth 467, 107–110 (2017).
[Crossref]

Oyama, Y.

Y. Sato, C. Tang, K. Watanabe, J. Ohsaki, T. Yamamoto, N. Tezuka, T. Tanabe, and Y. Oyama, “Terahertz wave generation via difference frequency generation by using 2D InxGa1-xSe crystal grown from an indium flux,” Opt. Express 28(1), 472–477 (2020).
[Crossref]

Y. Sato, C. Tang, K. Watanabe, T. Tanabe, and Y. Oyama, “Characteristics of 2D Ge-doped GaSe grown by low temperature liquid phase deposition under a controlled Se vapor pressure,” J. Nanosci. Curr. Res. 03(02), 1000128 (2018).
[Crossref]

S. Zhao, Y. Sato, K. Maeda, T. Tanabe, H. Ohtani, and Y. Oyama, “Liquid phase growth of GaSe1-xTex mixed crystals by temperature difference method under controlled vapor pressure,” J. Cryst. Growth 467, 107–110 (2017).
[Crossref]

N. Lei, Y. Sato, T. Tanabe, K. Maeda, and Y. Oyama, “Transition metal doping of GaSe implemented with low temperature liquid phase growth,” J. Cryst. Growth 460, 94–97 (2017).
[Crossref]

S. Takasuna, J. Shiogai, S. Matsuzaka, M. Kohda, Y. Oyama, and J. Nitta, “Weak antilocalization induced by Rashba spin-orbit interaction in layered III-VI compound semiconductor GaSe thin films,” Phys. Rev. B 96(16), 161303 (2017).
[Crossref]

T. Tanabe, S. Zhao, Y. Sato, and Y. Oyama, “Effect of adding Te to layered GaSe crystals to increase the van der Waals bonding force,” J. Appl. Phys. 122(16), 165105 (2017).
[Crossref]

K. Saito, Y. Nagai, K. Yamamoto, K. Maeda, T. Tanabe, and Y. Oyama, “Terahertz Wave Generation via Nonlinear Parametric Process from ɛ-GaSe Single Crystals Grown by Liquid Phase Solution Method,” Opt. Photonics J. 04(08), 213–218 (2014).
[Crossref]

H. Dezaki, T. Tanabe, J. Haiyan, and Y. Oyama, “Wide Frequency Tunable GaSe Terahertz Emitter under Collinear Phase Matching Condition,” Key Eng. Mater. 500, 58–61 (2012).
[Crossref]

J. Nishizawa, T. Sasaki, Y. Oyama, and T. Tanabe, “Aspects of point defects in coherent terahertz-wave spectroscopy,” Phys. B (Amsterdam, Neth.) 401-402, 677–681 (2007).
[Crossref]

Y. Sato, C. Tang, K. Watanabe, M. Nakajima, T. Yamamoto, N. Tezuka, T. Tanabe, and Y. Oyama, “Optical and electrical properties of InxGa1-xSe mixed crystal grown from indium flux by the traveling heater method,” J. Electron. Mater., (Submitted)

Pan, C. L.

Potekaev, A. I.

J. Guo, D. J. Li, J. J. Xie, L. M. Zhang, Z. S. Feng, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Limiting pump intensity for sulfur-doped gallium selenide crystals,” Laser Phys. Lett. 11(5), 055401 (2014).
[Crossref]

Saito, K.

K. Saito, Y. Nagai, K. Yamamoto, K. Maeda, T. Tanabe, and Y. Oyama, “Terahertz Wave Generation via Nonlinear Parametric Process from ɛ-GaSe Single Crystals Grown by Liquid Phase Solution Method,” Opt. Photonics J. 04(08), 213–218 (2014).
[Crossref]

Sarkisov, S. Y.

V. G. Voevodin, O. V. Voevodina, S. A. Bereznaya, Z. V. Korotchenko, A. N. Morozov, S. Y. Sarkisov, N. C. Fernelius, and J. T. Goldstein, “Large single crystals of gallium selenide: growing, doping by In and characterization,” Opt. Mater. 26(4), 495–499 (2004).
[Crossref]

Sasaki, T.

J. Nishizawa, T. Sasaki, Y. Oyama, and T. Tanabe, “Aspects of point defects in coherent terahertz-wave spectroscopy,” Phys. B (Amsterdam, Neth.) 401-402, 677–681 (2007).
[Crossref]

T. Tanabe, K. Suto, J. Nishizawa, and T. Sasaki, “Characteristics of terahertz-wave generation from GaSe crystals,” J. Phys. D: Appl. Phys. 37(2), 155–158 (2004).
[Crossref]

Sasaki, Y.

A. Kasuya, Y. Sasaki, S. Hashimoto, Y. Nishina, and H. Iwasaki, “Stacking fault density and splitting of exciton states in ɛ-GaSe,” Solid State Commun. 55(1), 63–66 (1985).
[Crossref]

Sato, Y.

Y. Sato, C. Tang, K. Watanabe, J. Ohsaki, T. Yamamoto, N. Tezuka, T. Tanabe, and Y. Oyama, “Terahertz wave generation via difference frequency generation by using 2D InxGa1-xSe crystal grown from an indium flux,” Opt. Express 28(1), 472–477 (2020).
[Crossref]

Y. Sato, C. Tang, K. Watanabe, T. Tanabe, and Y. Oyama, “Characteristics of 2D Ge-doped GaSe grown by low temperature liquid phase deposition under a controlled Se vapor pressure,” J. Nanosci. Curr. Res. 03(02), 1000128 (2018).
[Crossref]

N. Lei, Y. Sato, T. Tanabe, K. Maeda, and Y. Oyama, “Transition metal doping of GaSe implemented with low temperature liquid phase growth,” J. Cryst. Growth 460, 94–97 (2017).
[Crossref]

S. Zhao, Y. Sato, K. Maeda, T. Tanabe, H. Ohtani, and Y. Oyama, “Liquid phase growth of GaSe1-xTex mixed crystals by temperature difference method under controlled vapor pressure,” J. Cryst. Growth 467, 107–110 (2017).
[Crossref]

T. Tanabe, S. Zhao, Y. Sato, and Y. Oyama, “Effect of adding Te to layered GaSe crystals to increase the van der Waals bonding force,” J. Appl. Phys. 122(16), 165105 (2017).
[Crossref]

Y. Sato, C. Tang, K. Watanabe, M. Nakajima, T. Yamamoto, N. Tezuka, T. Tanabe, and Y. Oyama, “Optical and electrical properties of InxGa1-xSe mixed crystal grown from indium flux by the traveling heater method,” J. Electron. Mater., (Submitted)

Shabalina, A. V.

J. Guo, J. J. Xie, L. M. Zhang, D. J. Li, G. L. Yang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. V. Shabalina, A. V. Shaiduko, and V. A. Svetlichnyi, “Characterization of Bridgman grown GaSe:Al crystals,” CrystEngComm 15(32), 6323–6328 (2013).
[Crossref]

Shaiduko, A. V.

J. Guo, D. J. Li, J. J. Xie, L. M. Zhang, Z. S. Feng, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Limiting pump intensity for sulfur-doped gallium selenide crystals,” Laser Phys. Lett. 11(5), 055401 (2014).
[Crossref]

J. Guo, J. J. Xie, L. M. Zhang, D. J. Li, G. L. Yang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. V. Shabalina, A. V. Shaiduko, and V. A. Svetlichnyi, “Characterization of Bridgman grown GaSe:Al crystals,” CrystEngComm 15(32), 6323–6328 (2013).
[Crossref]

Shaidukoi, A.

Shi, W.

W. Shi and Y. Ding, “A monochromatic and high-power terahertz source tunable in the ranges of 2.7–38.4 and 58.2–3540 µm for variety of potential applications,” J. Appl. Phys. Lett. 84(10), 1635–1637 (2004).
[Crossref]

W. Shi, Y. J. Ding, N. Fernelius, and K. Vodopyanov, “Efficient, tunable, and coherent 0.18–5.27-THz source based on GaSe crystal,” Opt. Lett. 27(16), 1454–1456 (2002).
[Crossref]

W. Shi, Y. J. Ding, X. Mu, and N. Fernelius, “Tunable and coherent nanosecond radiation in the range of 2.7–28.7 mm based on difference-frequency generation in gallium selenide,” Appl. Phys. Lett. 80(21), 3889–3891 (2002).
[Crossref]

Shiogai, J.

S. Takasuna, J. Shiogai, S. Matsuzaka, M. Kohda, Y. Oyama, and J. Nitta, “Weak antilocalization induced by Rashba spin-orbit interaction in layered III-VI compound semiconductor GaSe thin films,” Phys. Rev. B 96(16), 161303 (2017).
[Crossref]

Singh, N. B.

Suhre, D. R.

Suto, K.

T. Tanabe, K. Suto, J. Nishizawa, and T. Sasaki, “Characteristics of terahertz-wave generation from GaSe crystals,” J. Phys. D: Appl. Phys. 37(2), 155–158 (2004).
[Crossref]

Svetlichnyi, V.

Svetlichnyi, V. A.

J. Guo, J. J. Xie, D. J. Li, G. L. Yang, F. Chen, C. R. Wang, L. M. Zhang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, and V. A. Svetlichnyi, “Doped GaSe crystals for laser frequency conversion,” Light: Sci. Appl. 4(12), e362 (2015).
[Crossref]

K. A. Kokh, J. F. Molloy, M. Naftaly, Y. M. Andreev, V. A. Svetlichnyi, G. V. Lanskii, I. N. Lapin, T. I. Izaak, and A. E. Kokh, “Growth and optical properties of solid solution crystals GaSe1-xSx,” Mater. Chem. Phys. 154, 152–157 (2015).
[Crossref]

J. Guo, D. J. Li, J. J. Xie, L. M. Zhang, Z. S. Feng, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Limiting pump intensity for sulfur-doped gallium selenide crystals,” Laser Phys. Lett. 11(5), 055401 (2014).
[Crossref]

J. Guo, J. J. Xie, L. M. Zhang, D. J. Li, G. L. Yang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. V. Shabalina, A. V. Shaiduko, and V. A. Svetlichnyi, “Characterization of Bridgman grown GaSe:Al crystals,” CrystEngComm 15(32), 6323–6328 (2013).
[Crossref]

Takasuna, S.

S. Takasuna, J. Shiogai, S. Matsuzaka, M. Kohda, Y. Oyama, and J. Nitta, “Weak antilocalization induced by Rashba spin-orbit interaction in layered III-VI compound semiconductor GaSe thin films,” Phys. Rev. B 96(16), 161303 (2017).
[Crossref]

Tanabe, T.

Y. Sato, C. Tang, K. Watanabe, J. Ohsaki, T. Yamamoto, N. Tezuka, T. Tanabe, and Y. Oyama, “Terahertz wave generation via difference frequency generation by using 2D InxGa1-xSe crystal grown from an indium flux,” Opt. Express 28(1), 472–477 (2020).
[Crossref]

Y. Sato, C. Tang, K. Watanabe, T. Tanabe, and Y. Oyama, “Characteristics of 2D Ge-doped GaSe grown by low temperature liquid phase deposition under a controlled Se vapor pressure,” J. Nanosci. Curr. Res. 03(02), 1000128 (2018).
[Crossref]

N. Lei, Y. Sato, T. Tanabe, K. Maeda, and Y. Oyama, “Transition metal doping of GaSe implemented with low temperature liquid phase growth,” J. Cryst. Growth 460, 94–97 (2017).
[Crossref]

S. Zhao, Y. Sato, K. Maeda, T. Tanabe, H. Ohtani, and Y. Oyama, “Liquid phase growth of GaSe1-xTex mixed crystals by temperature difference method under controlled vapor pressure,” J. Cryst. Growth 467, 107–110 (2017).
[Crossref]

T. Tanabe, S. Zhao, Y. Sato, and Y. Oyama, “Effect of adding Te to layered GaSe crystals to increase the van der Waals bonding force,” J. Appl. Phys. 122(16), 165105 (2017).
[Crossref]

K. Saito, Y. Nagai, K. Yamamoto, K. Maeda, T. Tanabe, and Y. Oyama, “Terahertz Wave Generation via Nonlinear Parametric Process from ɛ-GaSe Single Crystals Grown by Liquid Phase Solution Method,” Opt. Photonics J. 04(08), 213–218 (2014).
[Crossref]

H. Dezaki, T. Tanabe, J. Haiyan, and Y. Oyama, “Wide Frequency Tunable GaSe Terahertz Emitter under Collinear Phase Matching Condition,” Key Eng. Mater. 500, 58–61 (2012).
[Crossref]

J. Nishizawa, T. Sasaki, Y. Oyama, and T. Tanabe, “Aspects of point defects in coherent terahertz-wave spectroscopy,” Phys. B (Amsterdam, Neth.) 401-402, 677–681 (2007).
[Crossref]

T. Tanabe, K. Suto, J. Nishizawa, and T. Sasaki, “Characteristics of terahertz-wave generation from GaSe crystals,” J. Phys. D: Appl. Phys. 37(2), 155–158 (2004).
[Crossref]

Y. Sato, C. Tang, K. Watanabe, M. Nakajima, T. Yamamoto, N. Tezuka, T. Tanabe, and Y. Oyama, “Optical and electrical properties of InxGa1-xSe mixed crystal grown from indium flux by the traveling heater method,” J. Electron. Mater., (Submitted)

Tang, C.

Y. Sato, C. Tang, K. Watanabe, J. Ohsaki, T. Yamamoto, N. Tezuka, T. Tanabe, and Y. Oyama, “Terahertz wave generation via difference frequency generation by using 2D InxGa1-xSe crystal grown from an indium flux,” Opt. Express 28(1), 472–477 (2020).
[Crossref]

Y. Sato, C. Tang, K. Watanabe, T. Tanabe, and Y. Oyama, “Characteristics of 2D Ge-doped GaSe grown by low temperature liquid phase deposition under a controlled Se vapor pressure,” J. Nanosci. Curr. Res. 03(02), 1000128 (2018).
[Crossref]

Y. Sato, C. Tang, K. Watanabe, M. Nakajima, T. Yamamoto, N. Tezuka, T. Tanabe, and Y. Oyama, “Optical and electrical properties of InxGa1-xSe mixed crystal grown from indium flux by the traveling heater method,” J. Electron. Mater., (Submitted)

Tang, T. T.

Tezuka, N.

Y. Sato, C. Tang, K. Watanabe, J. Ohsaki, T. Yamamoto, N. Tezuka, T. Tanabe, and Y. Oyama, “Terahertz wave generation via difference frequency generation by using 2D InxGa1-xSe crystal grown from an indium flux,” Opt. Express 28(1), 472–477 (2020).
[Crossref]

Y. Sato, C. Tang, K. Watanabe, M. Nakajima, T. Yamamoto, N. Tezuka, T. Tanabe, and Y. Oyama, “Optical and electrical properties of InxGa1-xSe mixed crystal grown from indium flux by the traveling heater method,” J. Electron. Mater., (Submitted)

Vodopyanov, K.

Voevodin, V. G.

S. Das, C. Ghosh, S. Gangopadhyay, U. Chatterjee, G. C. Bhar, V. G. Voevodin, and O. G. Voevodina, “Tunable coherent infrared source from 5–16 µm based on difference-frequency mixing in an indium-doped GaSe crystal,” J. Opt. Soc. Am. B 23(2), 282–288 (2006).
[Crossref]

V. G. Voevodin, O. V. Voevodina, S. A. Bereznaya, Z. V. Korotchenko, A. N. Morozov, S. Y. Sarkisov, N. C. Fernelius, and J. T. Goldstein, “Large single crystals of gallium selenide: growing, doping by In and characterization,” Opt. Mater. 26(4), 495–499 (2004).
[Crossref]

Voevodina, O. G.

Voevodina, O. V.

V. G. Voevodin, O. V. Voevodina, S. A. Bereznaya, Z. V. Korotchenko, A. N. Morozov, S. Y. Sarkisov, N. C. Fernelius, and J. T. Goldstein, “Large single crystals of gallium selenide: growing, doping by In and characterization,” Opt. Mater. 26(4), 495–499 (2004).
[Crossref]

Wang, C. R.

J. Guo, J. J. Xie, D. J. Li, G. L. Yang, F. Chen, C. R. Wang, L. M. Zhang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, and V. A. Svetlichnyi, “Doped GaSe crystals for laser frequency conversion,” Light: Sci. Appl. 4(12), e362 (2015).
[Crossref]

Watanabe, K.

Y. Sato, C. Tang, K. Watanabe, J. Ohsaki, T. Yamamoto, N. Tezuka, T. Tanabe, and Y. Oyama, “Terahertz wave generation via difference frequency generation by using 2D InxGa1-xSe crystal grown from an indium flux,” Opt. Express 28(1), 472–477 (2020).
[Crossref]

Y. Sato, C. Tang, K. Watanabe, T. Tanabe, and Y. Oyama, “Characteristics of 2D Ge-doped GaSe grown by low temperature liquid phase deposition under a controlled Se vapor pressure,” J. Nanosci. Curr. Res. 03(02), 1000128 (2018).
[Crossref]

Y. Sato, C. Tang, K. Watanabe, M. Nakajima, T. Yamamoto, N. Tezuka, T. Tanabe, and Y. Oyama, “Optical and electrical properties of InxGa1-xSe mixed crystal grown from indium flux by the traveling heater method,” J. Electron. Mater., (Submitted)

Wu, F. G.

Wu, K. H.

Xie, J. J.

J. Guo, J. J. Xie, D. J. Li, G. L. Yang, F. Chen, C. R. Wang, L. M. Zhang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, and V. A. Svetlichnyi, “Doped GaSe crystals for laser frequency conversion,” Light: Sci. Appl. 4(12), e362 (2015).
[Crossref]

J. Guo, D. J. Li, J. J. Xie, L. M. Zhang, Z. S. Feng, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Limiting pump intensity for sulfur-doped gallium selenide crystals,” Laser Phys. Lett. 11(5), 055401 (2014).
[Crossref]

J. Guo, J. J. Xie, L. M. Zhang, D. J. Li, G. L. Yang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. V. Shabalina, A. V. Shaiduko, and V. A. Svetlichnyi, “Characterization of Bridgman grown GaSe:Al crystals,” CrystEngComm 15(32), 6323–6328 (2013).
[Crossref]

Yamamoto, K.

K. Saito, Y. Nagai, K. Yamamoto, K. Maeda, T. Tanabe, and Y. Oyama, “Terahertz Wave Generation via Nonlinear Parametric Process from ɛ-GaSe Single Crystals Grown by Liquid Phase Solution Method,” Opt. Photonics J. 04(08), 213–218 (2014).
[Crossref]

Yamamoto, T.

Y. Sato, C. Tang, K. Watanabe, J. Ohsaki, T. Yamamoto, N. Tezuka, T. Tanabe, and Y. Oyama, “Terahertz wave generation via difference frequency generation by using 2D InxGa1-xSe crystal grown from an indium flux,” Opt. Express 28(1), 472–477 (2020).
[Crossref]

Y. Sato, C. Tang, K. Watanabe, M. Nakajima, T. Yamamoto, N. Tezuka, T. Tanabe, and Y. Oyama, “Optical and electrical properties of InxGa1-xSe mixed crystal grown from indium flux by the traveling heater method,” J. Electron. Mater., (Submitted)

Yang, G. L.

J. Guo, J. J. Xie, D. J. Li, G. L. Yang, F. Chen, C. R. Wang, L. M. Zhang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, and V. A. Svetlichnyi, “Doped GaSe crystals for laser frequency conversion,” Light: Sci. Appl. 4(12), e362 (2015).
[Crossref]

J. Guo, J. J. Xie, L. M. Zhang, D. J. Li, G. L. Yang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. V. Shabalina, A. V. Shaiduko, and V. A. Svetlichnyi, “Characterization of Bridgman grown GaSe:Al crystals,” CrystEngComm 15(32), 6323–6328 (2013).
[Crossref]

Yen, S. T.

Zhang, H. Z.

Zhang, J. Y.

Zhang, L. M.

J. Guo, J. J. Xie, D. J. Li, G. L. Yang, F. Chen, C. R. Wang, L. M. Zhang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, and V. A. Svetlichnyi, “Doped GaSe crystals for laser frequency conversion,” Light: Sci. Appl. 4(12), e362 (2015).
[Crossref]

J. Guo, D. J. Li, J. J. Xie, L. M. Zhang, Z. S. Feng, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Limiting pump intensity for sulfur-doped gallium selenide crystals,” Laser Phys. Lett. 11(5), 055401 (2014).
[Crossref]

J. Guo, J. J. Xie, L. M. Zhang, D. J. Li, G. L. Yang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. V. Shabalina, A. V. Shaiduko, and V. A. Svetlichnyi, “Characterization of Bridgman grown GaSe:Al crystals,” CrystEngComm 15(32), 6323–6328 (2013).
[Crossref]

Zhao, S.

S. Zhao, Y. Sato, K. Maeda, T. Tanabe, H. Ohtani, and Y. Oyama, “Liquid phase growth of GaSe1-xTex mixed crystals by temperature difference method under controlled vapor pressure,” J. Cryst. Growth 467, 107–110 (2017).
[Crossref]

T. Tanabe, S. Zhao, Y. Sato, and Y. Oyama, “Effect of adding Te to layered GaSe crystals to increase the van der Waals bonding force,” J. Appl. Phys. 122(16), 165105 (2017).
[Crossref]

Appl. Phys. Lett. (1)

W. Shi, Y. J. Ding, X. Mu, and N. Fernelius, “Tunable and coherent nanosecond radiation in the range of 2.7–28.7 mm based on difference-frequency generation in gallium selenide,” Appl. Phys. Lett. 80(21), 3889–3891 (2002).
[Crossref]

CrystEngComm (1)

J. Guo, J. J. Xie, L. M. Zhang, D. J. Li, G. L. Yang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. V. Shabalina, A. V. Shaiduko, and V. A. Svetlichnyi, “Characterization of Bridgman grown GaSe:Al crystals,” CrystEngComm 15(32), 6323–6328 (2013).
[Crossref]

J. Appl. Phys. (1)

T. Tanabe, S. Zhao, Y. Sato, and Y. Oyama, “Effect of adding Te to layered GaSe crystals to increase the van der Waals bonding force,” J. Appl. Phys. 122(16), 165105 (2017).
[Crossref]

J. Appl. Phys. Lett. (1)

W. Shi and Y. Ding, “A monochromatic and high-power terahertz source tunable in the ranges of 2.7–38.4 and 58.2–3540 µm for variety of potential applications,” J. Appl. Phys. Lett. 84(10), 1635–1637 (2004).
[Crossref]

J. Cryst. Growth (2)

S. Zhao, Y. Sato, K. Maeda, T. Tanabe, H. Ohtani, and Y. Oyama, “Liquid phase growth of GaSe1-xTex mixed crystals by temperature difference method under controlled vapor pressure,” J. Cryst. Growth 467, 107–110 (2017).
[Crossref]

N. Lei, Y. Sato, T. Tanabe, K. Maeda, and Y. Oyama, “Transition metal doping of GaSe implemented with low temperature liquid phase growth,” J. Cryst. Growth 460, 94–97 (2017).
[Crossref]

J. Nanosci. Curr. Res. (1)

Y. Sato, C. Tang, K. Watanabe, T. Tanabe, and Y. Oyama, “Characteristics of 2D Ge-doped GaSe grown by low temperature liquid phase deposition under a controlled Se vapor pressure,” J. Nanosci. Curr. Res. 03(02), 1000128 (2018).
[Crossref]

J. Opt. Soc. Am. B (2)

J. Phys. D: Appl. Phys. (1)

T. Tanabe, K. Suto, J. Nishizawa, and T. Sasaki, “Characteristics of terahertz-wave generation from GaSe crystals,” J. Phys. D: Appl. Phys. 37(2), 155–158 (2004).
[Crossref]

Key Eng. Mater. (1)

H. Dezaki, T. Tanabe, J. Haiyan, and Y. Oyama, “Wide Frequency Tunable GaSe Terahertz Emitter under Collinear Phase Matching Condition,” Key Eng. Mater. 500, 58–61 (2012).
[Crossref]

Laser Phys. Lett. (1)

J. Guo, D. J. Li, J. J. Xie, L. M. Zhang, Z. S. Feng, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Limiting pump intensity for sulfur-doped gallium selenide crystals,” Laser Phys. Lett. 11(5), 055401 (2014).
[Crossref]

Light: Sci. Appl. (1)

J. Guo, J. J. Xie, D. J. Li, G. L. Yang, F. Chen, C. R. Wang, L. M. Zhang, Y. M. Andreev, K. A. Kokh, G. V. Lanskii, and V. A. Svetlichnyi, “Doped GaSe crystals for laser frequency conversion,” Light: Sci. Appl. 4(12), e362 (2015).
[Crossref]

Mater. Chem. Phys. (1)

K. A. Kokh, J. F. Molloy, M. Naftaly, Y. M. Andreev, V. A. Svetlichnyi, G. V. Lanskii, I. N. Lapin, T. I. Izaak, and A. E. Kokh, “Growth and optical properties of solid solution crystals GaSe1-xSx,” Mater. Chem. Phys. 154, 152–157 (2015).
[Crossref]

Opt. Express (4)

Opt. Lett. (2)

Opt. Mater. (1)

V. G. Voevodin, O. V. Voevodina, S. A. Bereznaya, Z. V. Korotchenko, A. N. Morozov, S. Y. Sarkisov, N. C. Fernelius, and J. T. Goldstein, “Large single crystals of gallium selenide: growing, doping by In and characterization,” Opt. Mater. 26(4), 495–499 (2004).
[Crossref]

Opt. Photonics J. (1)

K. Saito, Y. Nagai, K. Yamamoto, K. Maeda, T. Tanabe, and Y. Oyama, “Terahertz Wave Generation via Nonlinear Parametric Process from ɛ-GaSe Single Crystals Grown by Liquid Phase Solution Method,” Opt. Photonics J. 04(08), 213–218 (2014).
[Crossref]

Phys. B (Amsterdam, Neth.) (1)

J. Nishizawa, T. Sasaki, Y. Oyama, and T. Tanabe, “Aspects of point defects in coherent terahertz-wave spectroscopy,” Phys. B (Amsterdam, Neth.) 401-402, 677–681 (2007).
[Crossref]

Phys. Rev. B (1)

S. Takasuna, J. Shiogai, S. Matsuzaka, M. Kohda, Y. Oyama, and J. Nitta, “Weak antilocalization induced by Rashba spin-orbit interaction in layered III-VI compound semiconductor GaSe thin films,” Phys. Rev. B 96(16), 161303 (2017).
[Crossref]

Solid State Commun. (1)

A. Kasuya, Y. Sasaki, S. Hashimoto, Y. Nishina, and H. Iwasaki, “Stacking fault density and splitting of exciton states in ɛ-GaSe,” Solid State Commun. 55(1), 63–66 (1985).
[Crossref]

Trans. Faraday Soc. (1)

F. London, “The general theory of molecular forces,” Trans. Faraday Soc. 33, 8b (1937).
[Crossref]

Other (4)

V. G. Dmitriev, G. G. Gurzadyan, and D. N. Nikogosyan, Handbook of Nonlinear Optical Crystals. Springer, Berlin, pp. 166–169 (1997).

O. Madelung, Semiconductors: Data Handbook, 3rd ed.; (Springer, Berlin, 2004) p. 524 & p. 531.

Y. Sato, C. Tang, K. Watanabe, M. Nakajima, T. Yamamoto, N. Tezuka, T. Tanabe, and Y. Oyama, “Optical and electrical properties of InxGa1-xSe mixed crystal grown from indium flux by the traveling heater method,” J. Electron. Mater., (Submitted)

R. L. Aggarwal and B. Lax, 1977 Nonlinear Infrared Generation. Springer, New York, p. 28 (1977).

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Figures (4)

Fig. 1.
Fig. 1. Schematic view of the THz wave generation system and definition of angles of excitation light
Fig. 2.
Fig. 2. (a) X-ray diffraction peaks from (0 0 18), (b) The plot of ${\cos ^2}{\boldsymbol {\theta} }$ vs. the lattice constant c calculated from diffraction peak from (0 0 14) to (0 0 20)
Fig. 3.
Fig. 3. Phase-matched peak at (a) 9.7 THz, (b) 10.1 THz and (c) 10.6 THz in the THz wave generation from 4 samples with different In content. Here black squares are the measured points and the solid red line are the fitting curve
Fig. 4.
Fig. 4. Relationship between the phase-matched incident angle of pump light and the indium content

Tables (3)

Tables Icon

Table 1. Indium content and thickness of the crystal used for THz wave generation

Tables Icon

Table 2. The THz pulse energy of each indium content and THz wave frequency

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Table 3. The maximum conversion efficiency of each indium content and THz wave frequency

Equations (14)

Equations on this page are rendered with MathJax. Learn more.

Conversion efficiency ( J 1 ) = P T H z ( J ) P p u m p ( J ) P s i g n a l ( J ) .
I THz ( L ) = 2 I pump I signal d eff 2 ω THz 2 n pump n signal n THz ε 0 c 3 L 2 sin c 2 ( Δ k L 2 ) × T pump T signal T THz × e α THz L 1 + e α THz L 2 e 1 2 Δ α L ( 1 2 Δ α L ) 2 ,
I THz = L 2 sin c 2 ( Δ k L 2 )
Δ k = | k THz | 2 ( | k pump | 2 + | k signal | 2 2 | k pump | | k signal | cos Δ θ int . ) .
Δ k = | k pump fit . k signal | 2 ( | k pump | 2 + | k signal | 2 2 | k pump | | k signal | cos Δ θ int . )
k signal = 2 π / λ signal = n signal ω signal / c
k pump = 2 π / λ pump = n pump ω pump / c = ( si n 2 θ int . pump n e 2 + co s 2 θ int . pump n o 2 ) 1 × ω pump c = ω pump c n o 2 × ( 1 sin 2 θ ext . pump n e 2 + sin 2 θ ext . pump n o 2 )
Δ θ int . = θ int . pump θ int . signal
θ int . pump = arcsin [ sin θ ext . pump n pump ] = arcsin [ sin θ ext . pump n o 2 × ( 1 sin 2 θ ext . pump n e 2 + sin 2 θ ext . pump n o 2 ) ]
θ int . signal = arcsin [ sin { θ ext . signal } n signal ] = arcsin [ sin { θ ext . pump Δ θ ext . } n signal ] = arcsin [ sin { θ ext . pump ( θ ext . fit . ( pump ) θ ext . fit . ( signal ) ) } n signal ] = arcsin [ sin { θ ext . pump ( θ ext . fit . ( pump ) arcsin ( n signal sin θ int . fit . ( signal ) ) ) } n signal ]
θ int . signal = arcsin [ sin { θ ext . pump ( θ ext . fit . ( pump ) arcsin ( n signal sin θ int . fit . ( pump ) ) ) } n signal ] = arcsin [ sin { θ ext . pump ( θ ext . fit . ( pump ) arcsin ( n signal Δ sin θ ext . fit . ( pump ) n pump fit . ) ) } n signal ]
n pump fit . = n o 2 × ( 1 sin 2 θ ext . fit . ( pump ) n e 2 + sin 2 θ ext . fit . ( pump ) n o 2 ) .
n pump fit . = n THz ω THz + n signal ω signal ω pump
n e = n o 2 ( n o 2 n pump fit . 2 ) / sin 2 θ ext . fit . ( pump ) + 1

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