Abstract

We demonstrate a stack of two III-nitride laser diodes (LDs) interconnected by a tunnel junction grown by plasma-assisted molecular beam epitaxy. Hydrogen-free growth is used to obtain as-grown p-type conductivity essential for buried tunnel junctions (TJ). We show the impact of the design of tunnel junction. In particular, we show that, apart from the beneficial piezoelectric polarization inside the TJ, heavy doping reduces the differential resistivity even further. The device starts to lase at a wavelength of 459 nm with a slope efficiency (SE) of 0.7 W/A followed by lasing at 456 nm from the second active region doubling the total SE to 1.4 W/A. This demonstration opens new possibilities for the fabrication of stacks of ultraviolet and visible high power pulsed III-nitride LD.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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    [Crossref]
  2. S. Krishnamoorthy, F. Akyol, and S. Rajan, “InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes,” Appl. Phys. Lett. 105(14), 141104 (2014).
    [Crossref]
  3. J. T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
    [Crossref]
  4. M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Vélez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” ‎,” Appl. Phys. Express 9(6), 061004 (2016).
    [Crossref]
  5. Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions,” Jpn. J. Appl. Phys. 52(8S), 08JB02 (2013).
    [Crossref]
  6. S. Krishnamoorthy, D. N. Nath, F. Akyol, P. S. Park, M. Esposto, and S. Rajan, “Polarization-engineered GaN/InGaN/GaN tunnel diodes,” Appl. Phys. Lett. 97(20), 203502 (2010).
    [Crossref]
  7. M. Malinverni, D. Martin, and N. Grandjean, “InGaN based micro light emitting diodes featuring a buried GaN tunnel junction,” Appl. Phys. Lett. 107(5), 051107 (2015).
    [Crossref]
  8. M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79(22), 3720–3722 (2001).
    [Crossref]
  9. H. Kurokawa, M. Kaga, T. Goda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Multijunction GaInN-based solar cells using a tunnel junction,” Appl. Phys. Express 7(3), 034104 (2014).
    [Crossref]
  10. R. Czernecki, E. Grzanka, R. Jakiela, S. Grzanka, C. Skierbiszewski, H. Turski, P. Perlin, T. Suski, K. Donimirski, and M. Leszczynski, “Hydrogen diffusion in GaN:Mg and GaN:Si,” J. Alloys Compd. 747, 354–358 (2018).
    [Crossref]
  11. S.-R. Jeon, Y.-H. Song, H.-J. Jang, G. M. Yang, S. W. Hwang, and S. J. Son, “Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions,” Appl. Phys. Lett. 78(21), 3265–3267 (2001).
    [Crossref]
  12. J. Neugebauer and C. G. Van de Walle, “Role of hydrogen in doping of GaN,” Appl. Phys. Lett. 68(13), 1829–1831 (1996).
    [Crossref]
  13. S. Chang, W. Lin, and C. Yu, “GaN-Based Multiquantum Well Light-Emitting Diodes With Tunnel-Junction-Cascaded Active Regions,” IEEE Electron Device Lett. 36(4), 366–368 (2015).
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  14. Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions,” Jpn. J. Appl. Phys. 52(8S), 08JK12 (2013).
    [Crossref]
  15. S. Lee, C. A. Forman, C. Lee, J. Kearns, E. C. Young, J. T. Leonard, D. A. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, “GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition‎,” Appl. Phys. Express 11(6), 062703 (2018).
    [Crossref]
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    [Crossref]
  17. B. Schwarz, “Mapping the world in 3D,” Nat. Photonics 4(7), 429–430 (2010).
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  18. S. Okawara, Y. Aoki, M. Kuwabara, Y. Takagi, J. Maeda, and H. Yoshida, “Nitride-based stacked laser diodes with a tunnel junction,” ‎,” Appl. Phys. Express 11(1), 012701 (2018).
    [Crossref]
  19. R. Dwiliński, R. Doradziński, J. Garczyński, L. P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, and H. Hayashi, “Bulk ammonothermal GaN,” J. Cryst. Growth 311(10), 3015–3018 (2009).
    [Crossref]
  20. G. Muziol, H. Turski, M. Siekacz, K. Szkudlarek, L. Janicki, S. Zolud, R. Kudrawiec, T. Suski, and C. Skierbiszewski, “Highly efficient optical transition between excited states in wide InGaN quantum wells,” https://arxiv.org/abs/1810.07612v1 (2018)
  21. C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, G. Cywiński, C. Cheze, S. Grzanka, P. Perlin, P. Wiśniewski, Z. R. Wasilewski, and S. Porowski, “AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy,” ‎,” Appl. Phys. Express 5(2), 112103 (2012).
    [Crossref]
  22. G. Muziol, H. Turski, M. Siekacz, S. Grzanka, P. Perlin, and C. Skierbiszewski, “Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide,” Appl. Phys. Express 9(9), 092103 (2016).
    [Crossref]
  23. G. Muziol, H. Turski, M. Siekacz, P. Wolny, J. Borysiuk, S. Grzanka, P. Perlin, and C. Skierbiszewski, “Aluminum-free nitride laser diodes: waveguiding, electrical and degradation properties,” Opt. Express 25(26), 33113–33121 (2017).
    [Crossref]
  24. C. Skierbiszewski, H. Turski, G. Muziol, M. Siekacz, M. Sawicka, G. Cywiński, Z. R. Wasilewski, and S. Porowski, “Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy,” J. Phys. D Appl. Phys. 47(7), 073001 (2014).
    [Crossref]
  25. G. Muziol, H. Turski, M. Siekacz, P. Wolny, S. Grzanka, E. Grzanka, P. Perlin, and C. Skierbiszewski, “Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 8(3), 032103 (2015).
    [Crossref]
  26. S. Rogowsky, H. Braun, U. T. Schwarz, S. Brüninghoff, A. Lell, and U. Strauß, “Multidimensional near- and far-field measurements of broad ridge (Al,In)GaN laser diodes,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 6(S2), S852–S855 (2009).
    [Crossref]
  27. D. Scholz, H. Braun, U. T. Schwarz, S. Brüninghoff, D. Queren, A. Lell, and U. Strauss, “Measurement and simulation of filamentation in (Al,In)GaN laser diodes,” Opt. Express 16(10), 6846–6859 (2008).
    [Crossref] [PubMed]
  28. S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110(10), 102104 (2017).
    [Crossref]

2018 (4)

R. Czernecki, E. Grzanka, R. Jakiela, S. Grzanka, C. Skierbiszewski, H. Turski, P. Perlin, T. Suski, K. Donimirski, and M. Leszczynski, “Hydrogen diffusion in GaN:Mg and GaN:Si,” J. Alloys Compd. 747, 354–358 (2018).
[Crossref]

S. Lee, C. A. Forman, C. Lee, J. Kearns, E. C. Young, J. T. Leonard, D. A. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, “GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition‎,” Appl. Phys. Express 11(6), 062703 (2018).
[Crossref]

C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11(3), 034103 (2018).
[Crossref]

S. Okawara, Y. Aoki, M. Kuwabara, Y. Takagi, J. Maeda, and H. Yoshida, “Nitride-based stacked laser diodes with a tunnel junction,” ‎,” Appl. Phys. Express 11(1), 012701 (2018).
[Crossref]

2017 (2)

G. Muziol, H. Turski, M. Siekacz, P. Wolny, J. Borysiuk, S. Grzanka, P. Perlin, and C. Skierbiszewski, “Aluminum-free nitride laser diodes: waveguiding, electrical and degradation properties,” Opt. Express 25(26), 33113–33121 (2017).
[Crossref]

S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110(10), 102104 (2017).
[Crossref]

2016 (2)

G. Muziol, H. Turski, M. Siekacz, S. Grzanka, P. Perlin, and C. Skierbiszewski, “Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide,” Appl. Phys. Express 9(9), 092103 (2016).
[Crossref]

M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Vélez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” ‎,” Appl. Phys. Express 9(6), 061004 (2016).
[Crossref]

2015 (4)

M. Malinverni, D. Martin, and N. Grandjean, “InGaN based micro light emitting diodes featuring a buried GaN tunnel junction,” Appl. Phys. Lett. 107(5), 051107 (2015).
[Crossref]

J. T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

S. Chang, W. Lin, and C. Yu, “GaN-Based Multiquantum Well Light-Emitting Diodes With Tunnel-Junction-Cascaded Active Regions,” IEEE Electron Device Lett. 36(4), 366–368 (2015).
[Crossref]

G. Muziol, H. Turski, M. Siekacz, P. Wolny, S. Grzanka, E. Grzanka, P. Perlin, and C. Skierbiszewski, “Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 8(3), 032103 (2015).
[Crossref]

2014 (3)

C. Skierbiszewski, H. Turski, G. Muziol, M. Siekacz, M. Sawicka, G. Cywiński, Z. R. Wasilewski, and S. Porowski, “Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy,” J. Phys. D Appl. Phys. 47(7), 073001 (2014).
[Crossref]

H. Kurokawa, M. Kaga, T. Goda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Multijunction GaInN-based solar cells using a tunnel junction,” Appl. Phys. Express 7(3), 034104 (2014).
[Crossref]

S. Krishnamoorthy, F. Akyol, and S. Rajan, “InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes,” Appl. Phys. Lett. 105(14), 141104 (2014).
[Crossref]

2013 (2)

Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions,” Jpn. J. Appl. Phys. 52(8S), 08JB02 (2013).
[Crossref]

Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions,” Jpn. J. Appl. Phys. 52(8S), 08JK12 (2013).
[Crossref]

2012 (1)

C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, G. Cywiński, C. Cheze, S. Grzanka, P. Perlin, P. Wiśniewski, Z. R. Wasilewski, and S. Porowski, “AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy,” ‎,” Appl. Phys. Express 5(2), 112103 (2012).
[Crossref]

2010 (2)

B. Schwarz, “Mapping the world in 3D,” Nat. Photonics 4(7), 429–430 (2010).
[Crossref]

S. Krishnamoorthy, D. N. Nath, F. Akyol, P. S. Park, M. Esposto, and S. Rajan, “Polarization-engineered GaN/InGaN/GaN tunnel diodes,” Appl. Phys. Lett. 97(20), 203502 (2010).
[Crossref]

2009 (2)

R. Dwiliński, R. Doradziński, J. Garczyński, L. P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, and H. Hayashi, “Bulk ammonothermal GaN,” J. Cryst. Growth 311(10), 3015–3018 (2009).
[Crossref]

S. Rogowsky, H. Braun, U. T. Schwarz, S. Brüninghoff, A. Lell, and U. Strauß, “Multidimensional near- and far-field measurements of broad ridge (Al,In)GaN laser diodes,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 6(S2), S852–S855 (2009).
[Crossref]

2008 (1)

2001 (2)

S.-R. Jeon, Y.-H. Song, H.-J. Jang, G. M. Yang, S. W. Hwang, and S. J. Son, “Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions,” Appl. Phys. Lett. 78(21), 3265–3267 (2001).
[Crossref]

M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79(22), 3720–3722 (2001).
[Crossref]

1996 (1)

J. Neugebauer and C. G. Van de Walle, “Role of hydrogen in doping of GaN,” Appl. Phys. Lett. 68(13), 1829–1831 (1996).
[Crossref]

1958 (1)

L. Esaki, “New Phenomenon in Narrow Germanium p-n Junctions,” Phys. Rev. 109(2), 603–604 (1958).
[Crossref]

Akasaki, I.

H. Kurokawa, M. Kaga, T. Goda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Multijunction GaInN-based solar cells using a tunnel junction,” Appl. Phys. Express 7(3), 034104 (2014).
[Crossref]

Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions,” Jpn. J. Appl. Phys. 52(8S), 08JB02 (2013).
[Crossref]

Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions,” Jpn. J. Appl. Phys. 52(8S), 08JK12 (2013).
[Crossref]

Akyol, F.

S. Krishnamoorthy, F. Akyol, and S. Rajan, “InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes,” Appl. Phys. Lett. 105(14), 141104 (2014).
[Crossref]

S. Krishnamoorthy, D. N. Nath, F. Akyol, P. S. Park, M. Esposto, and S. Rajan, “Polarization-engineered GaN/InGaN/GaN tunnel diodes,” Appl. Phys. Lett. 97(20), 203502 (2010).
[Crossref]

Amano, H.

H. Kurokawa, M. Kaga, T. Goda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Multijunction GaInN-based solar cells using a tunnel junction,” Appl. Phys. Express 7(3), 034104 (2014).
[Crossref]

Aoki, Y.

S. Okawara, Y. Aoki, M. Kuwabara, Y. Takagi, J. Maeda, and H. Yoshida, “Nitride-based stacked laser diodes with a tunnel junction,” ‎,” Appl. Phys. Express 11(1), 012701 (2018).
[Crossref]

Bläsing, J.

S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110(10), 102104 (2017).
[Crossref]

Borysiuk, J.

Braun, H.

S. Rogowsky, H. Braun, U. T. Schwarz, S. Brüninghoff, A. Lell, and U. Strauß, “Multidimensional near- and far-field measurements of broad ridge (Al,In)GaN laser diodes,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 6(S2), S852–S855 (2009).
[Crossref]

D. Scholz, H. Braun, U. T. Schwarz, S. Brüninghoff, D. Queren, A. Lell, and U. Strauss, “Measurement and simulation of filamentation in (Al,In)GaN laser diodes,” Opt. Express 16(10), 6846–6859 (2008).
[Crossref] [PubMed]

Brüninghoff, S.

S. Rogowsky, H. Braun, U. T. Schwarz, S. Brüninghoff, A. Lell, and U. Strauß, “Multidimensional near- and far-field measurements of broad ridge (Al,In)GaN laser diodes,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 6(S2), S852–S855 (2009).
[Crossref]

D. Scholz, H. Braun, U. T. Schwarz, S. Brüninghoff, D. Queren, A. Lell, and U. Strauss, “Measurement and simulation of filamentation in (Al,In)GaN laser diodes,” Opt. Express 16(10), 6846–6859 (2008).
[Crossref] [PubMed]

Castiglia, A.

M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Vélez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” ‎,” Appl. Phys. Express 9(6), 061004 (2016).
[Crossref]

Chang, S.

S. Chang, W. Lin, and C. Yu, “GaN-Based Multiquantum Well Light-Emitting Diodes With Tunnel-Junction-Cascaded Active Regions,” IEEE Electron Device Lett. 36(4), 366–368 (2015).
[Crossref]

Cheze, C.

C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, G. Cywiński, C. Cheze, S. Grzanka, P. Perlin, P. Wiśniewski, Z. R. Wasilewski, and S. Porowski, “AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy,” ‎,” Appl. Phys. Express 5(2), 112103 (2012).
[Crossref]

Cohen, D. A.

S. Lee, C. A. Forman, C. Lee, J. Kearns, E. C. Young, J. T. Leonard, D. A. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, “GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition‎,” Appl. Phys. Express 11(6), 062703 (2018).
[Crossref]

J. T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

Cywinski, G.

C. Skierbiszewski, H. Turski, G. Muziol, M. Siekacz, M. Sawicka, G. Cywiński, Z. R. Wasilewski, and S. Porowski, “Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy,” J. Phys. D Appl. Phys. 47(7), 073001 (2014).
[Crossref]

C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, G. Cywiński, C. Cheze, S. Grzanka, P. Perlin, P. Wiśniewski, Z. R. Wasilewski, and S. Porowski, “AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy,” ‎,” Appl. Phys. Express 5(2), 112103 (2012).
[Crossref]

Czernecki, R.

R. Czernecki, E. Grzanka, R. Jakiela, S. Grzanka, C. Skierbiszewski, H. Turski, P. Perlin, T. Suski, K. Donimirski, and M. Leszczynski, “Hydrogen diffusion in GaN:Mg and GaN:Si,” J. Alloys Compd. 747, 354–358 (2018).
[Crossref]

Dadgar, A.

S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110(10), 102104 (2017).
[Crossref]

DenBaars, S. P.

S. Lee, C. A. Forman, C. Lee, J. Kearns, E. C. Young, J. T. Leonard, D. A. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, “GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition‎,” Appl. Phys. Express 11(6), 062703 (2018).
[Crossref]

J. T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

Diagne, M.

M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79(22), 3720–3722 (2001).
[Crossref]

Donimirski, K.

R. Czernecki, E. Grzanka, R. Jakiela, S. Grzanka, C. Skierbiszewski, H. Turski, P. Perlin, T. Suski, K. Donimirski, and M. Leszczynski, “Hydrogen diffusion in GaN:Mg and GaN:Si,” J. Alloys Compd. 747, 354–358 (2018).
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R. Dwiliński, R. Doradziński, J. Garczyński, L. P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, and H. Hayashi, “Bulk ammonothermal GaN,” J. Cryst. Growth 311(10), 3015–3018 (2009).
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Duelk, M.

M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Vélez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” ‎,” Appl. Phys. Express 9(6), 061004 (2016).
[Crossref]

Dwilinski, R.

R. Dwiliński, R. Doradziński, J. Garczyński, L. P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, and H. Hayashi, “Bulk ammonothermal GaN,” J. Cryst. Growth 311(10), 3015–3018 (2009).
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L. Esaki, “New Phenomenon in Narrow Germanium p-n Junctions,” Phys. Rev. 109(2), 603–604 (1958).
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S. Krishnamoorthy, D. N. Nath, F. Akyol, P. S. Park, M. Esposto, and S. Rajan, “Polarization-engineered GaN/InGaN/GaN tunnel diodes,” Appl. Phys. Lett. 97(20), 203502 (2010).
[Crossref]

Feduniewicz-Zmuda, A.

C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11(3), 034103 (2018).
[Crossref]

C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, G. Cywiński, C. Cheze, S. Grzanka, P. Perlin, P. Wiśniewski, Z. R. Wasilewski, and S. Porowski, “AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy,” ‎,” Appl. Phys. Express 5(2), 112103 (2012).
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Figiel, J. J.

M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79(22), 3720–3722 (2001).
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Forman, C. A.

S. Lee, C. A. Forman, C. Lee, J. Kearns, E. C. Young, J. T. Leonard, D. A. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, “GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition‎,” Appl. Phys. Express 11(6), 062703 (2018).
[Crossref]

Garczynski, J.

R. Dwiliński, R. Doradziński, J. Garczyński, L. P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, and H. Hayashi, “Bulk ammonothermal GaN,” J. Cryst. Growth 311(10), 3015–3018 (2009).
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Goda, T.

H. Kurokawa, M. Kaga, T. Goda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Multijunction GaInN-based solar cells using a tunnel junction,” Appl. Phys. Express 7(3), 034104 (2014).
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M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Vélez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” ‎,” Appl. Phys. Express 9(6), 061004 (2016).
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M. Malinverni, D. Martin, and N. Grandjean, “InGaN based micro light emitting diodes featuring a buried GaN tunnel junction,” Appl. Phys. Lett. 107(5), 051107 (2015).
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Grzanka, E.

R. Czernecki, E. Grzanka, R. Jakiela, S. Grzanka, C. Skierbiszewski, H. Turski, P. Perlin, T. Suski, K. Donimirski, and M. Leszczynski, “Hydrogen diffusion in GaN:Mg and GaN:Si,” J. Alloys Compd. 747, 354–358 (2018).
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G. Muziol, H. Turski, M. Siekacz, P. Wolny, S. Grzanka, E. Grzanka, P. Perlin, and C. Skierbiszewski, “Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 8(3), 032103 (2015).
[Crossref]

Grzanka, S.

R. Czernecki, E. Grzanka, R. Jakiela, S. Grzanka, C. Skierbiszewski, H. Turski, P. Perlin, T. Suski, K. Donimirski, and M. Leszczynski, “Hydrogen diffusion in GaN:Mg and GaN:Si,” J. Alloys Compd. 747, 354–358 (2018).
[Crossref]

G. Muziol, H. Turski, M. Siekacz, P. Wolny, J. Borysiuk, S. Grzanka, P. Perlin, and C. Skierbiszewski, “Aluminum-free nitride laser diodes: waveguiding, electrical and degradation properties,” Opt. Express 25(26), 33113–33121 (2017).
[Crossref]

G. Muziol, H. Turski, M. Siekacz, S. Grzanka, P. Perlin, and C. Skierbiszewski, “Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide,” Appl. Phys. Express 9(9), 092103 (2016).
[Crossref]

G. Muziol, H. Turski, M. Siekacz, P. Wolny, S. Grzanka, E. Grzanka, P. Perlin, and C. Skierbiszewski, “Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 8(3), 032103 (2015).
[Crossref]

C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, G. Cywiński, C. Cheze, S. Grzanka, P. Perlin, P. Wiśniewski, Z. R. Wasilewski, and S. Porowski, “AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy,” ‎,” Appl. Phys. Express 5(2), 112103 (2012).
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Han, J.

M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79(22), 3720–3722 (2001).
[Crossref]

Hayashi, H.

R. Dwiliński, R. Doradziński, J. Garczyński, L. P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, and H. Hayashi, “Bulk ammonothermal GaN,” J. Cryst. Growth 311(10), 3015–3018 (2009).
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He, Y.

M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79(22), 3720–3722 (2001).
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Hoffmann, M. P.

S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110(10), 102104 (2017).
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S.-R. Jeon, Y.-H. Song, H.-J. Jang, G. M. Yang, S. W. Hwang, and S. J. Son, “Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions,” Appl. Phys. Lett. 78(21), 3265–3267 (2001).
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Iwaya, M.

H. Kurokawa, M. Kaga, T. Goda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Multijunction GaInN-based solar cells using a tunnel junction,” Appl. Phys. Express 7(3), 034104 (2014).
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Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions,” Jpn. J. Appl. Phys. 52(8S), 08JB02 (2013).
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Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions,” Jpn. J. Appl. Phys. 52(8S), 08JK12 (2013).
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Jakiela, R.

R. Czernecki, E. Grzanka, R. Jakiela, S. Grzanka, C. Skierbiszewski, H. Turski, P. Perlin, T. Suski, K. Donimirski, and M. Leszczynski, “Hydrogen diffusion in GaN:Mg and GaN:Si,” J. Alloys Compd. 747, 354–358 (2018).
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Jang, H.-J.

S.-R. Jeon, Y.-H. Song, H.-J. Jang, G. M. Yang, S. W. Hwang, and S. J. Son, “Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions,” Appl. Phys. Lett. 78(21), 3265–3267 (2001).
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Jeon, S.-R.

S.-R. Jeon, Y.-H. Song, H.-J. Jang, G. M. Yang, S. W. Hwang, and S. J. Son, “Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions,” Appl. Phys. Lett. 78(21), 3265–3267 (2001).
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Kaga, M.

H. Kurokawa, M. Kaga, T. Goda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Multijunction GaInN-based solar cells using a tunnel junction,” Appl. Phys. Express 7(3), 034104 (2014).
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Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions,” Jpn. J. Appl. Phys. 52(8S), 08JB02 (2013).
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Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions,” Jpn. J. Appl. Phys. 52(8S), 08JK12 (2013).
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Kamiyama, S.

H. Kurokawa, M. Kaga, T. Goda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Multijunction GaInN-based solar cells using a tunnel junction,” Appl. Phys. Express 7(3), 034104 (2014).
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Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions,” Jpn. J. Appl. Phys. 52(8S), 08JK12 (2013).
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Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions,” Jpn. J. Appl. Phys. 52(8S), 08JB02 (2013).
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R. Dwiliński, R. Doradziński, J. Garczyński, L. P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, and H. Hayashi, “Bulk ammonothermal GaN,” J. Cryst. Growth 311(10), 3015–3018 (2009).
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Kearns, J.

S. Lee, C. A. Forman, C. Lee, J. Kearns, E. C. Young, J. T. Leonard, D. A. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, “GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition‎,” Appl. Phys. Express 11(6), 062703 (2018).
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M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79(22), 3720–3722 (2001).
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S. Krishnamoorthy, F. Akyol, and S. Rajan, “InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes,” Appl. Phys. Lett. 105(14), 141104 (2014).
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S. Krishnamoorthy, D. N. Nath, F. Akyol, P. S. Park, M. Esposto, and S. Rajan, “Polarization-engineered GaN/InGaN/GaN tunnel diodes,” Appl. Phys. Lett. 97(20), 203502 (2010).
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H. Kurokawa, M. Kaga, T. Goda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Multijunction GaInN-based solar cells using a tunnel junction,” Appl. Phys. Express 7(3), 034104 (2014).
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S. Okawara, Y. Aoki, M. Kuwabara, Y. Takagi, J. Maeda, and H. Yoshida, “Nitride-based stacked laser diodes with a tunnel junction,” ‎,” Appl. Phys. Express 11(1), 012701 (2018).
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Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions,” Jpn. J. Appl. Phys. 52(8S), 08JK12 (2013).
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Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions,” Jpn. J. Appl. Phys. 52(8S), 08JB02 (2013).
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Lee, C.

S. Lee, C. A. Forman, C. Lee, J. Kearns, E. C. Young, J. T. Leonard, D. A. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, “GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition‎,” Appl. Phys. Express 11(6), 062703 (2018).
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Lee, S.

S. Lee, C. A. Forman, C. Lee, J. Kearns, E. C. Young, J. T. Leonard, D. A. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, “GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition‎,” Appl. Phys. Express 11(6), 062703 (2018).
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Lehmann, M.

S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110(10), 102104 (2017).
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Lell, A.

S. Rogowsky, H. Braun, U. T. Schwarz, S. Brüninghoff, A. Lell, and U. Strauß, “Multidimensional near- and far-field measurements of broad ridge (Al,In)GaN laser diodes,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 6(S2), S852–S855 (2009).
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D. Scholz, H. Braun, U. T. Schwarz, S. Brüninghoff, D. Queren, A. Lell, and U. Strauss, “Measurement and simulation of filamentation in (Al,In)GaN laser diodes,” Opt. Express 16(10), 6846–6859 (2008).
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Leonard, J. T.

S. Lee, C. A. Forman, C. Lee, J. Kearns, E. C. Young, J. T. Leonard, D. A. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, “GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition‎,” Appl. Phys. Express 11(6), 062703 (2018).
[Crossref]

J. T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

Leszczynski, M.

R. Czernecki, E. Grzanka, R. Jakiela, S. Grzanka, C. Skierbiszewski, H. Turski, P. Perlin, T. Suski, K. Donimirski, and M. Leszczynski, “Hydrogen diffusion in GaN:Mg and GaN:Si,” J. Alloys Compd. 747, 354–358 (2018).
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Lin, W.

S. Chang, W. Lin, and C. Yu, “GaN-Based Multiquantum Well Light-Emitting Diodes With Tunnel-Junction-Cascaded Active Regions,” IEEE Electron Device Lett. 36(4), 366–368 (2015).
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Maeda, J.

S. Okawara, Y. Aoki, M. Kuwabara, Y. Takagi, J. Maeda, and H. Yoshida, “Nitride-based stacked laser diodes with a tunnel junction,” ‎,” Appl. Phys. Express 11(1), 012701 (2018).
[Crossref]

Makarona, E.

M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79(22), 3720–3722 (2001).
[Crossref]

Malinverni, M.

M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Vélez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” ‎,” Appl. Phys. Express 9(6), 061004 (2016).
[Crossref]

M. Malinverni, D. Martin, and N. Grandjean, “InGaN based micro light emitting diodes featuring a buried GaN tunnel junction,” Appl. Phys. Lett. 107(5), 051107 (2015).
[Crossref]

Margalith, T.

J. T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

Martin, D.

M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Vélez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” ‎,” Appl. Phys. Express 9(6), 061004 (2016).
[Crossref]

M. Malinverni, D. Martin, and N. Grandjean, “InGaN based micro light emitting diodes featuring a buried GaN tunnel junction,” Appl. Phys. Lett. 107(5), 051107 (2015).
[Crossref]

Minakuchi, H.

R. Dwiliński, R. Doradziński, J. Garczyński, L. P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, and H. Hayashi, “Bulk ammonothermal GaN,” J. Cryst. Growth 311(10), 3015–3018 (2009).
[Crossref]

Morita, T.

Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions,” Jpn. J. Appl. Phys. 52(8S), 08JK12 (2013).
[Crossref]

Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions,” Jpn. J. Appl. Phys. 52(8S), 08JB02 (2013).
[Crossref]

Muziol, G.

C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11(3), 034103 (2018).
[Crossref]

G. Muziol, H. Turski, M. Siekacz, P. Wolny, J. Borysiuk, S. Grzanka, P. Perlin, and C. Skierbiszewski, “Aluminum-free nitride laser diodes: waveguiding, electrical and degradation properties,” Opt. Express 25(26), 33113–33121 (2017).
[Crossref]

G. Muziol, H. Turski, M. Siekacz, S. Grzanka, P. Perlin, and C. Skierbiszewski, “Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide,” Appl. Phys. Express 9(9), 092103 (2016).
[Crossref]

G. Muziol, H. Turski, M. Siekacz, P. Wolny, S. Grzanka, E. Grzanka, P. Perlin, and C. Skierbiszewski, “Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 8(3), 032103 (2015).
[Crossref]

C. Skierbiszewski, H. Turski, G. Muziol, M. Siekacz, M. Sawicka, G. Cywiński, Z. R. Wasilewski, and S. Porowski, “Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy,” J. Phys. D Appl. Phys. 47(7), 073001 (2014).
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C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, G. Cywiński, C. Cheze, S. Grzanka, P. Perlin, P. Wiśniewski, Z. R. Wasilewski, and S. Porowski, “AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy,” ‎,” Appl. Phys. Express 5(2), 112103 (2012).
[Crossref]

Nakamura, S.

S. Lee, C. A. Forman, C. Lee, J. Kearns, E. C. Young, J. T. Leonard, D. A. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, “GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition‎,” Appl. Phys. Express 11(6), 062703 (2018).
[Crossref]

J. T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

Narodovitch, M.

S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110(10), 102104 (2017).
[Crossref]

Nath, D. N.

S. Krishnamoorthy, D. N. Nath, F. Akyol, P. S. Park, M. Esposto, and S. Rajan, “Polarization-engineered GaN/InGaN/GaN tunnel diodes,” Appl. Phys. Lett. 97(20), 203502 (2010).
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Neugebauer, J.

J. Neugebauer and C. G. Van de Walle, “Role of hydrogen in doping of GaN,” Appl. Phys. Lett. 68(13), 1829–1831 (1996).
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Neugebauer, S.

S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110(10), 102104 (2017).
[Crossref]

Niermann, T.

S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110(10), 102104 (2017).
[Crossref]

Nowakowska-Szkudlarek, A.

C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11(3), 034103 (2018).
[Crossref]

Nowakowski-Szkudlarek, K.

C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11(3), 034103 (2018).
[Crossref]

Nurmikko, A. V.

M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79(22), 3720–3722 (2001).
[Crossref]

Okawara, S.

S. Okawara, Y. Aoki, M. Kuwabara, Y. Takagi, J. Maeda, and H. Yoshida, “Nitride-based stacked laser diodes with a tunnel junction,” ‎,” Appl. Phys. Express 11(1), 012701 (2018).
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Park, P. S.

S. Krishnamoorthy, D. N. Nath, F. Akyol, P. S. Park, M. Esposto, and S. Rajan, “Polarization-engineered GaN/InGaN/GaN tunnel diodes,” Appl. Phys. Lett. 97(20), 203502 (2010).
[Crossref]

Perlin, P.

R. Czernecki, E. Grzanka, R. Jakiela, S. Grzanka, C. Skierbiszewski, H. Turski, P. Perlin, T. Suski, K. Donimirski, and M. Leszczynski, “Hydrogen diffusion in GaN:Mg and GaN:Si,” J. Alloys Compd. 747, 354–358 (2018).
[Crossref]

C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11(3), 034103 (2018).
[Crossref]

G. Muziol, H. Turski, M. Siekacz, P. Wolny, J. Borysiuk, S. Grzanka, P. Perlin, and C. Skierbiszewski, “Aluminum-free nitride laser diodes: waveguiding, electrical and degradation properties,” Opt. Express 25(26), 33113–33121 (2017).
[Crossref]

G. Muziol, H. Turski, M. Siekacz, S. Grzanka, P. Perlin, and C. Skierbiszewski, “Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide,” Appl. Phys. Express 9(9), 092103 (2016).
[Crossref]

G. Muziol, H. Turski, M. Siekacz, P. Wolny, S. Grzanka, E. Grzanka, P. Perlin, and C. Skierbiszewski, “Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 8(3), 032103 (2015).
[Crossref]

C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, G. Cywiński, C. Cheze, S. Grzanka, P. Perlin, P. Wiśniewski, Z. R. Wasilewski, and S. Porowski, “AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy,” ‎,” Appl. Phys. Express 5(2), 112103 (2012).
[Crossref]

Porowski, S.

C. Skierbiszewski, H. Turski, G. Muziol, M. Siekacz, M. Sawicka, G. Cywiński, Z. R. Wasilewski, and S. Porowski, “Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy,” J. Phys. D Appl. Phys. 47(7), 073001 (2014).
[Crossref]

C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, G. Cywiński, C. Cheze, S. Grzanka, P. Perlin, P. Wiśniewski, Z. R. Wasilewski, and S. Porowski, “AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy,” ‎,” Appl. Phys. Express 5(2), 112103 (2012).
[Crossref]

Puchalski, A.

R. Dwiliński, R. Doradziński, J. Garczyński, L. P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, and H. Hayashi, “Bulk ammonothermal GaN,” J. Cryst. Growth 311(10), 3015–3018 (2009).
[Crossref]

Queren, D.

Rajan, S.

S. Krishnamoorthy, F. Akyol, and S. Rajan, “InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes,” Appl. Phys. Lett. 105(14), 141104 (2014).
[Crossref]

S. Krishnamoorthy, D. N. Nath, F. Akyol, P. S. Park, M. Esposto, and S. Rajan, “Polarization-engineered GaN/InGaN/GaN tunnel diodes,” Appl. Phys. Lett. 97(20), 203502 (2010).
[Crossref]

Rogowsky, S.

S. Rogowsky, H. Braun, U. T. Schwarz, S. Brüninghoff, A. Lell, and U. Strauß, “Multidimensional near- and far-field measurements of broad ridge (Al,In)GaN laser diodes,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 6(S2), S852–S855 (2009).
[Crossref]

Rossetti, M.

M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Vélez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” ‎,” Appl. Phys. Express 9(6), 061004 (2016).
[Crossref]

Sawicka, M.

C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11(3), 034103 (2018).
[Crossref]

C. Skierbiszewski, H. Turski, G. Muziol, M. Siekacz, M. Sawicka, G. Cywiński, Z. R. Wasilewski, and S. Porowski, “Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy,” J. Phys. D Appl. Phys. 47(7), 073001 (2014).
[Crossref]

C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, G. Cywiński, C. Cheze, S. Grzanka, P. Perlin, P. Wiśniewski, Z. R. Wasilewski, and S. Porowski, “AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy,” ‎,” Appl. Phys. Express 5(2), 112103 (2012).
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Schwarz, B.

B. Schwarz, “Mapping the world in 3D,” Nat. Photonics 4(7), 429–430 (2010).
[Crossref]

Schwarz, U. T.

S. Rogowsky, H. Braun, U. T. Schwarz, S. Brüninghoff, A. Lell, and U. Strauß, “Multidimensional near- and far-field measurements of broad ridge (Al,In)GaN laser diodes,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 6(S2), S852–S855 (2009).
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D. Scholz, H. Braun, U. T. Schwarz, S. Brüninghoff, D. Queren, A. Lell, and U. Strauss, “Measurement and simulation of filamentation in (Al,In)GaN laser diodes,” Opt. Express 16(10), 6846–6859 (2008).
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Siekacz, M.

C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11(3), 034103 (2018).
[Crossref]

G. Muziol, H. Turski, M. Siekacz, P. Wolny, J. Borysiuk, S. Grzanka, P. Perlin, and C. Skierbiszewski, “Aluminum-free nitride laser diodes: waveguiding, electrical and degradation properties,” Opt. Express 25(26), 33113–33121 (2017).
[Crossref]

G. Muziol, H. Turski, M. Siekacz, S. Grzanka, P. Perlin, and C. Skierbiszewski, “Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide,” Appl. Phys. Express 9(9), 092103 (2016).
[Crossref]

G. Muziol, H. Turski, M. Siekacz, P. Wolny, S. Grzanka, E. Grzanka, P. Perlin, and C. Skierbiszewski, “Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 8(3), 032103 (2015).
[Crossref]

C. Skierbiszewski, H. Turski, G. Muziol, M. Siekacz, M. Sawicka, G. Cywiński, Z. R. Wasilewski, and S. Porowski, “Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy,” J. Phys. D Appl. Phys. 47(7), 073001 (2014).
[Crossref]

C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, G. Cywiński, C. Cheze, S. Grzanka, P. Perlin, P. Wiśniewski, Z. R. Wasilewski, and S. Porowski, “AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy,” ‎,” Appl. Phys. Express 5(2), 112103 (2012).
[Crossref]

Sierzputowski, L. P.

R. Dwiliński, R. Doradziński, J. Garczyński, L. P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, and H. Hayashi, “Bulk ammonothermal GaN,” J. Cryst. Growth 311(10), 3015–3018 (2009).
[Crossref]

Skierbiszewski, C.

C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11(3), 034103 (2018).
[Crossref]

R. Czernecki, E. Grzanka, R. Jakiela, S. Grzanka, C. Skierbiszewski, H. Turski, P. Perlin, T. Suski, K. Donimirski, and M. Leszczynski, “Hydrogen diffusion in GaN:Mg and GaN:Si,” J. Alloys Compd. 747, 354–358 (2018).
[Crossref]

G. Muziol, H. Turski, M. Siekacz, P. Wolny, J. Borysiuk, S. Grzanka, P. Perlin, and C. Skierbiszewski, “Aluminum-free nitride laser diodes: waveguiding, electrical and degradation properties,” Opt. Express 25(26), 33113–33121 (2017).
[Crossref]

G. Muziol, H. Turski, M. Siekacz, S. Grzanka, P. Perlin, and C. Skierbiszewski, “Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide,” Appl. Phys. Express 9(9), 092103 (2016).
[Crossref]

G. Muziol, H. Turski, M. Siekacz, P. Wolny, S. Grzanka, E. Grzanka, P. Perlin, and C. Skierbiszewski, “Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 8(3), 032103 (2015).
[Crossref]

C. Skierbiszewski, H. Turski, G. Muziol, M. Siekacz, M. Sawicka, G. Cywiński, Z. R. Wasilewski, and S. Porowski, “Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy,” J. Phys. D Appl. Phys. 47(7), 073001 (2014).
[Crossref]

C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, G. Cywiński, C. Cheze, S. Grzanka, P. Perlin, P. Wiśniewski, Z. R. Wasilewski, and S. Porowski, “AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy,” ‎,” Appl. Phys. Express 5(2), 112103 (2012).
[Crossref]

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S.-R. Jeon, Y.-H. Song, H.-J. Jang, G. M. Yang, S. W. Hwang, and S. J. Son, “Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions,” Appl. Phys. Lett. 78(21), 3265–3267 (2001).
[Crossref]

Song, Y.-H.

S.-R. Jeon, Y.-H. Song, H.-J. Jang, G. M. Yang, S. W. Hwang, and S. J. Son, “Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions,” Appl. Phys. Lett. 78(21), 3265–3267 (2001).
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S. Lee, C. A. Forman, C. Lee, J. Kearns, E. C. Young, J. T. Leonard, D. A. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, “GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition‎,” Appl. Phys. Express 11(6), 062703 (2018).
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J. T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

Strauß, U.

S. Rogowsky, H. Braun, U. T. Schwarz, S. Brüninghoff, A. Lell, and U. Strauß, “Multidimensional near- and far-field measurements of broad ridge (Al,In)GaN laser diodes,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 6(S2), S852–S855 (2009).
[Crossref]

Strauss, U.

Strittmatter, A.

S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110(10), 102104 (2017).
[Crossref]

Suski, T.

R. Czernecki, E. Grzanka, R. Jakiela, S. Grzanka, C. Skierbiszewski, H. Turski, P. Perlin, T. Suski, K. Donimirski, and M. Leszczynski, “Hydrogen diffusion in GaN:Mg and GaN:Si,” J. Alloys Compd. 747, 354–358 (2018).
[Crossref]

Takagi, Y.

S. Okawara, Y. Aoki, M. Kuwabara, Y. Takagi, J. Maeda, and H. Yoshida, “Nitride-based stacked laser diodes with a tunnel junction,” ‎,” Appl. Phys. Express 11(1), 012701 (2018).
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Takeuchi, T.

H. Kurokawa, M. Kaga, T. Goda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano, “Multijunction GaInN-based solar cells using a tunnel junction,” Appl. Phys. Express 7(3), 034104 (2014).
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Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions,” Jpn. J. Appl. Phys. 52(8S), 08JB02 (2013).
[Crossref]

Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions,” Jpn. J. Appl. Phys. 52(8S), 08JK12 (2013).
[Crossref]

M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79(22), 3720–3722 (2001).
[Crossref]

Tardy, C.

M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Vélez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” ‎,” Appl. Phys. Express 9(6), 061004 (2016).
[Crossref]

Turski, H.

R. Czernecki, E. Grzanka, R. Jakiela, S. Grzanka, C. Skierbiszewski, H. Turski, P. Perlin, T. Suski, K. Donimirski, and M. Leszczynski, “Hydrogen diffusion in GaN:Mg and GaN:Si,” J. Alloys Compd. 747, 354–358 (2018).
[Crossref]

C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11(3), 034103 (2018).
[Crossref]

G. Muziol, H. Turski, M. Siekacz, P. Wolny, J. Borysiuk, S. Grzanka, P. Perlin, and C. Skierbiszewski, “Aluminum-free nitride laser diodes: waveguiding, electrical and degradation properties,” Opt. Express 25(26), 33113–33121 (2017).
[Crossref]

G. Muziol, H. Turski, M. Siekacz, S. Grzanka, P. Perlin, and C. Skierbiszewski, “Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide,” Appl. Phys. Express 9(9), 092103 (2016).
[Crossref]

G. Muziol, H. Turski, M. Siekacz, P. Wolny, S. Grzanka, E. Grzanka, P. Perlin, and C. Skierbiszewski, “Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 8(3), 032103 (2015).
[Crossref]

C. Skierbiszewski, H. Turski, G. Muziol, M. Siekacz, M. Sawicka, G. Cywiński, Z. R. Wasilewski, and S. Porowski, “Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy,” J. Phys. D Appl. Phys. 47(7), 073001 (2014).
[Crossref]

C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, G. Cywiński, C. Cheze, S. Grzanka, P. Perlin, P. Wiśniewski, Z. R. Wasilewski, and S. Porowski, “AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy,” ‎,” Appl. Phys. Express 5(2), 112103 (2012).
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J. Neugebauer and C. G. Van de Walle, “Role of hydrogen in doping of GaN,” Appl. Phys. Lett. 68(13), 1829–1831 (1996).
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M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Vélez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” ‎,” Appl. Phys. Express 9(6), 061004 (2016).
[Crossref]

Waldrip, K. E.

M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79(22), 3720–3722 (2001).
[Crossref]

Wasilewski, Z. R.

C. Skierbiszewski, H. Turski, G. Muziol, M. Siekacz, M. Sawicka, G. Cywiński, Z. R. Wasilewski, and S. Porowski, “Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy,” J. Phys. D Appl. Phys. 47(7), 073001 (2014).
[Crossref]

C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, G. Cywiński, C. Cheze, S. Grzanka, P. Perlin, P. Wiśniewski, Z. R. Wasilewski, and S. Porowski, “AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy,” ‎,” Appl. Phys. Express 5(2), 112103 (2012).
[Crossref]

Wisniewski, P.

C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, G. Cywiński, C. Cheze, S. Grzanka, P. Perlin, P. Wiśniewski, Z. R. Wasilewski, and S. Porowski, “AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy,” ‎,” Appl. Phys. Express 5(2), 112103 (2012).
[Crossref]

Witte, H.

S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110(10), 102104 (2017).
[Crossref]

Wolny, P.

G. Muziol, H. Turski, M. Siekacz, P. Wolny, J. Borysiuk, S. Grzanka, P. Perlin, and C. Skierbiszewski, “Aluminum-free nitride laser diodes: waveguiding, electrical and degradation properties,” Opt. Express 25(26), 33113–33121 (2017).
[Crossref]

G. Muziol, H. Turski, M. Siekacz, P. Wolny, S. Grzanka, E. Grzanka, P. Perlin, and C. Skierbiszewski, “Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 8(3), 032103 (2015).
[Crossref]

Yagi, K.

Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions,” Jpn. J. Appl. Phys. 52(8S), 08JK12 (2013).
[Crossref]

Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions,” Jpn. J. Appl. Phys. 52(8S), 08JB02 (2013).
[Crossref]

R. Dwiliński, R. Doradziński, J. Garczyński, L. P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, and H. Hayashi, “Bulk ammonothermal GaN,” J. Cryst. Growth 311(10), 3015–3018 (2009).
[Crossref]

Yamashita, K.

Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions,” Jpn. J. Appl. Phys. 52(8S), 08JK12 (2013).
[Crossref]

Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions,” Jpn. J. Appl. Phys. 52(8S), 08JB02 (2013).
[Crossref]

Yang, G. M.

S.-R. Jeon, Y.-H. Song, H.-J. Jang, G. M. Yang, S. W. Hwang, and S. J. Son, “Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions,” Appl. Phys. Lett. 78(21), 3265–3267 (2001).
[Crossref]

Yonkee, B. P.

J. T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

Yoshida, H.

S. Okawara, Y. Aoki, M. Kuwabara, Y. Takagi, J. Maeda, and H. Yoshida, “Nitride-based stacked laser diodes with a tunnel junction,” ‎,” Appl. Phys. Express 11(1), 012701 (2018).
[Crossref]

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S. Okawara, Y. Aoki, M. Kuwabara, Y. Takagi, J. Maeda, and H. Yoshida, “Nitride-based stacked laser diodes with a tunnel junction,” ‎,” Appl. Phys. Express 11(1), 012701 (2018).
[Crossref]

C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, G. Cywiński, C. Cheze, S. Grzanka, P. Perlin, P. Wiśniewski, Z. R. Wasilewski, and S. Porowski, “AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy,” ‎,” Appl. Phys. Express 5(2), 112103 (2012).
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G. Muziol, H. Turski, M. Siekacz, S. Grzanka, P. Perlin, and C. Skierbiszewski, “Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide,” Appl. Phys. Express 9(9), 092103 (2016).
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Figures (7)

Fig. 1
Fig. 1 Schematic image of the processing design of stack of two LDs grown by PAMBE.
Fig. 2
Fig. 2 (a) STEM image of the stack of two LDs grown by PAMBE with the layer sequence. Details of (b) top LD2 active region lasing at 459 nm, (c) tunnel junctions used to interconnect the LDs and grown on top of the LD stack and (d) bottom LD1 active region lasing at 456 nm.
Fig. 3
Fig. 3 (a) Band diagram of the stack of two III-nitride laser diodes interconnected with a tunnel junction, (b) band structures of undoped and doped tunnel junctions, (c) I-V characteristics of LED test structures with undoped and doped InGaN QW tunnel junctions.
Fig. 4
Fig. 4 AFM image showing the surface morphology of the stack of two LDs grown by PAMBE. Atomic step edges are visible.
Fig. 5
Fig. 5 Light-Current characteristics of the stack of two LDs structure grown by PAMBE. Two lasing thresholds are observed. The slope efficiency is doubled after the second LD starts to lase.
Fig. 6
Fig. 6 Lasing spectra of the stack of two LDs obtained for (a) 3.7 kA/cm2 and (b) 5.3 kA/cm2. Inserts show the collected near-field patterns.
Fig. 7
Fig. 7 Voltage-current density diagram for PAMBE LDs.

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