Abstract

We report the performance enhancement of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) using AlGaN nanoporous template (NPT). The NPT was fabricated by the electrochemical etching method and served as the dislocation filtering layer and strain relieving layer. The n-AlGaN laterally regrown on NPT showed reduced dislocation density and mitigated compressive strain comparing with that on the as-grown template (AGT). A 23% improvement of internal quantum efficiency was achieved for the multiple quantum wells thereon. Moreover, the nanopores in the NPT transformed into elongated air voids during high temperature growth process, which could facilitate the escaping of photons by scattering and thus improve the light extraction efficiency. As a consequence, the DUV LED based on NPT demonstrated an increase of the light outpower by 50% at 20 mA than that on AGT.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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2018 (6)

D. Li, K. Jiang, X. Sun, and C. Guo, “AlGaN photonics: recent advances in materials and ultraviolet devices,” Adv. Opt. Photonics 10(1), 43 (2018).
[Crossref]

J. Zhang, Y. Gao, L. Zhou, Y.-U. Gil, and K.-M. Kim, “Surface hole gas enabled transparent deep ultraviolet light-emitting diode,” Semicond. Sci. Technol. 33(7), 07LT01 (2018).
[Crossref]

R. Lin, S. V. Galan, H. Sun, Y. Hu, M. S. Alias, B. Janjua, T. K. Ng, B. S. Ooi, and X. Li, “Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations,” Photon. Res. 6(5), 457 (2018).
[Crossref]

Y. Guo, J. Yan, Y. Zhang, J. Wang, and J. Li, “Enhancing the light extraction of AlGaN-based ultraviolet light-emitting diodes in the nanoscale,” J. Nanophotonics 12(04), 1 (2018).
[Crossref]

B. S. Ooi, T. K. Ng, M. K. Shakfa, D. Priante, R. C. Subedi, I. Ashry, A. A. Alatawi, E. Stegenburgs, J. A. Holguin-Lerma, M. Tangi, and M. S. Alias, “Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices,” J. Nanophotonics 12, 1 (2018).

L. Zhang, J. Yan, Q. Wu, Y. Guo, C. Yang, T. Wei, Z. Liu, G. Yuan, X. Wei, L. Zhao, Y. Zhang, J. Li, and J. Wang, “Improved crystalline quality of Al-rich n-AlGaN by regrowth on nanoporous template fabricated by electrochemical etching,” J. Nanophotonics 12(04), 1 (2018).
[Crossref]

2017 (11)

G.-J. Wang, B.-S. Hong, Y.-Y. Chen, Z.-J. Yang, T.-L. Tsai, Y.-S. Lin, and C.-F. Lin, “GaN/AlGaN ultraviolet light-emitting diode with an embedded porous-AlGaN distributed Bragg reflector,” Appl. Phys. Express 10(12), 122102 (2017).
[Crossref]

M. S. Alias, B. Janjua, C. Zhao, D. Priante, A. A. Alhamoud, M. Tangi, L. M. Alanazi, A. A. Alatawi, A. M. Albadri, A. Y. Alyamani, T. K. Ng, and B. S. Ooi, “Enhancing the Light-Extraction Efficiency of an AlGaN Nanowire Ultraviolet Light-Emitting Diode by Using Nitride/Air Distributed Bragg Reflector Nanogratings,” IEEE Photonics J. 9(5), 1–8 (2017).
[Crossref]

Y. Guo, Y. Zhang, J. Yan, H. Xie, L. Liu, X. Chen, M. Hou, Z. Qin, J. Wang, and J. Li, “Light extraction enhancement of AlGaN-based ultraviolet light-emitting diodes by substrate sidewall roughening,” Appl. Phys. Lett. 111(1), 011102 (2017).
[Crossref] [PubMed]

S.-i. Inoue, N. Tamari, and M. Taniguchi, “150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm,” Appl. Phys. Lett. 110(14), 141106 (2017).
[Crossref]

B. Janjua, H. Sun, C. Zhao, D. H. Anjum, D. Priante, A. A. Alhamoud, F. Wu, X. Li, A. M. Albadri, A. Y. Alyamani, M. M. El-Desouki, T. K. Ng, and B. S. Ooi, “Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates,” Opt. Express 25(2), 1381–1390 (2017).
[Crossref] [PubMed]

S. Zhang, Y. Zhang, X. Chen, Y. Guo, J. Yan, J. Wang, and J. Li, “The effect of AlN/AlGaN superlattices on crystal and optical properties of AlGaN epitaxial layers,” Journal of Semiconductors 38(11), 112002 (2017).
[Crossref]

D. Lee, J. W. Lee, J. Jang, I.-S. Shin, L. Jin, J. H. Park, J. Kim, J. Lee, H.-S. Noh, Y.-I. Kim, Y. Park, G.-D. Lee, Y. Park, J. K. Kim, and E. Yoon, “Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates,” Appl. Phys. Lett. 110(19), 191103 (2017).
[Crossref]

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D Appl. Phys. 50(24), 245101 (2017).
[Crossref]

Z. H. Zhang, L. Li, Y. Zhang, F. Xu, Q. Shi, B. Shen, and W. Bi, “On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes,” Opt. Express 25(14), 16550–16559 (2017).
[Crossref] [PubMed]

T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10(3), 031002 (2017).
[Crossref]

T. H. Lee, B. R. Lee, K. R. Son, H. W. Shin, and T. G. Kim, “Highly Efficient Deep-UV Light-Emitting Diodes Using AlN-Based Deep-UV-Transparent Glass Electrodes,” ACS Appl. Mater. Interfaces 9(50), 43774–43781 (2017).
[Crossref] [PubMed]

2016 (2)

L. Jinmin, L. Zhe, L. Zhiqiang, Y. Jianchang, W. Tongbo, Y. Xiaoyan, and W. Junxi, “Advances and prospects in nitrides based light-emitting-diodes,” Journal of Semiconductors 37(6), 061001 (2016).
[Crossref]

L. Zhang, F. Xu, J. Wang, C. He, W. Guo, M. Wang, B. Sheng, L. Lu, Z. Qin, X. Wang, and B. Shen, “High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography,” Sci. Rep. 6(1), 35934 (2016).
[Crossref] [PubMed]

2015 (4)

Y. Tian, J. Yan, Y. Zhang, X. Chen, Y. Guo, P. Cong, L. Sun, Q. Wang, E. Guo, X. Wei, J. Wang, and J. Li, “Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser,” Opt. Express 23(9), 11334–11340 (2015).
[Crossref] [PubMed]

S. Zhao, M. Djavid, and Z. Mi, “Surface emitting, high efficiency near-vacuum ultraviolet light source with aluminum nitride nanowires monolithically grown on silicon,” Nano Lett. 15(10), 7006–7009 (2015).
[Crossref] [PubMed]

K. H. Lee, H. J. Park, S. H. Kim, M. Asadirad, Y. T. Moon, J. S. Kwak, and J. H. Ryou, “Light-extraction efficiency control in AlGaN-based deep-ultraviolet flip-chip light-emitting diodes: a comparison to InGaN-based visible flip-chip light-emitting diodes,” Opt. Express 23(16), 20340–20349 (2015).
[Crossref] [PubMed]

C. He, Z. Qin, F. Xu, M. Hou, S. Zhang, L. Zhang, X. Wang, W. Ge, and B. Shen, “Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers,” Sci. Rep. 5(1), 13046 (2015).
[Crossref] [PubMed]

2014 (6)

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

A. Zhen, P. Ma, Y. Zhang, E. Guo, Y. Tian, B. Liu, S. Guo, L. Shan, J. Wang, and J. Li, “Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode,” Appl. Phys. Lett. 105(25), 251103 (2014).
[Crossref]

M. Hou, Z. Qin, C. He, J. Cai, X. Wang, and B. Shen, “Effect of injection current on the optical polarization of AlGaN-based ultraviolet light-emitting diodes,” Opt. Express 22(16), 19589–19594 (2014).
[Crossref] [PubMed]

H.-Y. Ryu, “Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures,” Nanoscale Res. Lett. 9(1), 58 (2014).
[Crossref] [PubMed]

P. Dong, J. Yan, Y. Zhang, J. Wang, C. Geng, H. Zheng, X. Wei, Q. Yan, and J. Li, “Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes,” Opt. Express 22(S2Suppl 2), A320–A327 (2014).
[Crossref]

K. J. Lee, S. J. Kim, J. J. Kim, K. Hwang, S. T. Kim, and S. J. Park, “Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers,” Opt. Express 22(S4Suppl 4), A1164–A1173 (2014).
[Crossref] [PubMed]

2013 (2)

W.-C. Lai, C.-H. Yen, J.-Z. Li, Y.-Y. Yang, H.-E. Cheng, S.-J. Chang, and S. Li, “GaN-Based Light-Emitting Diodes on Electrochemically Etched GaN Template,” IEEE Photonics Technol. Lett. 25(15), 1531–1534 (2013).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

2011 (2)

C. D. Yerino, Y. Zhang, B. Leung, M. L. Lee, T.-C. Hsu, C.-K. Wang, W.-C. Peng, and J. Han, “Shape transformation of nanoporous GaN by annealing: From buried cavities to nanomembranes,” Appl. Phys. Lett. 98(25), 251910 (2011).
[Crossref]

V. Kueller, A. Knauer, F. Brunner, U. Zeimer, H. Rodriguez, M. Kneissl, and M. Weyers, “Growth of AlGaN and AlN on patterned AlN/sapphire templates,” J. Cryst. Growth 315(1), 200–203 (2011).
[Crossref]

2010 (1)

2009 (1)

K. Sudoh, H. Iwasaki, R. Hiruta, H. Kuribayashi, and R. Shimizu, “Void shape evolution and formation of silicon-on-nothing structures during hydrogen annealing of hole arrays on Si(001),” J. Appl. Phys. 105(8), 083536 (2009).
[Crossref]

2007 (2)

H. Hartono, C. B. Soh, S. Y. Chow, S. J. Chua, and E. A. Fitzgerald, “Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template,” Appl. Phys. Lett. 90(17), 171917 (2007).
[Crossref]

M. Imura, K. Nakano, G. Narita, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, and A. Bandoh, “Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers,” J. Cryst. Growth 298, 257–260 (2007).
[Crossref]

2005 (1)

M. Khizar, Z. Y. Fan, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Nitride deep-ultraviolet light-emitting diodes with microlens array,” Appl. Phys. Lett. 86(17), 173504 (2005).
[Crossref]

2004 (1)

R. S. Q. Fareed, V. Adivarahan, C. Q. Chen, S. Rai, E. Kuokstis, J. W. Yang, M. A. Khan, J. Caissie, and R. J. Molnar, “Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN,” Appl. Phys. Lett. 84(5), 696–698 (2004).
[Crossref]

2002 (1)

V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
[Crossref]

Aderhold, J.

V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
[Crossref]

Adivarahan, V.

R. S. Q. Fareed, V. Adivarahan, C. Q. Chen, S. Rai, E. Kuokstis, J. W. Yang, M. A. Khan, J. Caissie, and R. J. Molnar, “Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN,” Appl. Phys. Lett. 84(5), 696–698 (2004).
[Crossref]

Ajia, I. A.

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D Appl. Phys. 50(24), 245101 (2017).
[Crossref]

Akasaki, I.

M. Imura, K. Nakano, G. Narita, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, and A. Bandoh, “Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers,” J. Cryst. Growth 298, 257–260 (2007).
[Crossref]

Alanazi, L. M.

M. S. Alias, B. Janjua, C. Zhao, D. Priante, A. A. Alhamoud, M. Tangi, L. M. Alanazi, A. A. Alatawi, A. M. Albadri, A. Y. Alyamani, T. K. Ng, and B. S. Ooi, “Enhancing the Light-Extraction Efficiency of an AlGaN Nanowire Ultraviolet Light-Emitting Diode by Using Nitride/Air Distributed Bragg Reflector Nanogratings,” IEEE Photonics J. 9(5), 1–8 (2017).
[Crossref]

Alatawi, A. A.

B. S. Ooi, T. K. Ng, M. K. Shakfa, D. Priante, R. C. Subedi, I. Ashry, A. A. Alatawi, E. Stegenburgs, J. A. Holguin-Lerma, M. Tangi, and M. S. Alias, “Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices,” J. Nanophotonics 12, 1 (2018).

M. S. Alias, B. Janjua, C. Zhao, D. Priante, A. A. Alhamoud, M. Tangi, L. M. Alanazi, A. A. Alatawi, A. M. Albadri, A. Y. Alyamani, T. K. Ng, and B. S. Ooi, “Enhancing the Light-Extraction Efficiency of an AlGaN Nanowire Ultraviolet Light-Emitting Diode by Using Nitride/Air Distributed Bragg Reflector Nanogratings,” IEEE Photonics J. 9(5), 1–8 (2017).
[Crossref]

Albadri, A. M.

M. S. Alias, B. Janjua, C. Zhao, D. Priante, A. A. Alhamoud, M. Tangi, L. M. Alanazi, A. A. Alatawi, A. M. Albadri, A. Y. Alyamani, T. K. Ng, and B. S. Ooi, “Enhancing the Light-Extraction Efficiency of an AlGaN Nanowire Ultraviolet Light-Emitting Diode by Using Nitride/Air Distributed Bragg Reflector Nanogratings,” IEEE Photonics J. 9(5), 1–8 (2017).
[Crossref]

B. Janjua, H. Sun, C. Zhao, D. H. Anjum, D. Priante, A. A. Alhamoud, F. Wu, X. Li, A. M. Albadri, A. Y. Alyamani, M. M. El-Desouki, T. K. Ng, and B. S. Ooi, “Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates,” Opt. Express 25(2), 1381–1390 (2017).
[Crossref] [PubMed]

Alhamoud, A. A.

B. Janjua, H. Sun, C. Zhao, D. H. Anjum, D. Priante, A. A. Alhamoud, F. Wu, X. Li, A. M. Albadri, A. Y. Alyamani, M. M. El-Desouki, T. K. Ng, and B. S. Ooi, “Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates,” Opt. Express 25(2), 1381–1390 (2017).
[Crossref] [PubMed]

M. S. Alias, B. Janjua, C. Zhao, D. Priante, A. A. Alhamoud, M. Tangi, L. M. Alanazi, A. A. Alatawi, A. M. Albadri, A. Y. Alyamani, T. K. Ng, and B. S. Ooi, “Enhancing the Light-Extraction Efficiency of an AlGaN Nanowire Ultraviolet Light-Emitting Diode by Using Nitride/Air Distributed Bragg Reflector Nanogratings,” IEEE Photonics J. 9(5), 1–8 (2017).
[Crossref]

Alias, M. S.

B. S. Ooi, T. K. Ng, M. K. Shakfa, D. Priante, R. C. Subedi, I. Ashry, A. A. Alatawi, E. Stegenburgs, J. A. Holguin-Lerma, M. Tangi, and M. S. Alias, “Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices,” J. Nanophotonics 12, 1 (2018).

R. Lin, S. V. Galan, H. Sun, Y. Hu, M. S. Alias, B. Janjua, T. K. Ng, B. S. Ooi, and X. Li, “Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations,” Photon. Res. 6(5), 457 (2018).
[Crossref]

M. S. Alias, B. Janjua, C. Zhao, D. Priante, A. A. Alhamoud, M. Tangi, L. M. Alanazi, A. A. Alatawi, A. M. Albadri, A. Y. Alyamani, T. K. Ng, and B. S. Ooi, “Enhancing the Light-Extraction Efficiency of an AlGaN Nanowire Ultraviolet Light-Emitting Diode by Using Nitride/Air Distributed Bragg Reflector Nanogratings,” IEEE Photonics J. 9(5), 1–8 (2017).
[Crossref]

Alyamani, A. Y.

M. S. Alias, B. Janjua, C. Zhao, D. Priante, A. A. Alhamoud, M. Tangi, L. M. Alanazi, A. A. Alatawi, A. M. Albadri, A. Y. Alyamani, T. K. Ng, and B. S. Ooi, “Enhancing the Light-Extraction Efficiency of an AlGaN Nanowire Ultraviolet Light-Emitting Diode by Using Nitride/Air Distributed Bragg Reflector Nanogratings,” IEEE Photonics J. 9(5), 1–8 (2017).
[Crossref]

B. Janjua, H. Sun, C. Zhao, D. H. Anjum, D. Priante, A. A. Alhamoud, F. Wu, X. Li, A. M. Albadri, A. Y. Alyamani, M. M. El-Desouki, T. K. Ng, and B. S. Ooi, “Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates,” Opt. Express 25(2), 1381–1390 (2017).
[Crossref] [PubMed]

Amano, H.

M. Imura, K. Nakano, G. Narita, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, and A. Bandoh, “Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers,” J. Cryst. Growth 298, 257–260 (2007).
[Crossref]

Anjum, D. H.

Asadirad, M.

Ashry, I.

B. S. Ooi, T. K. Ng, M. K. Shakfa, D. Priante, R. C. Subedi, I. Ashry, A. A. Alatawi, E. Stegenburgs, J. A. Holguin-Lerma, M. Tangi, and M. S. Alias, “Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices,” J. Nanophotonics 12, 1 (2018).

Balakrishnan, K.

M. Imura, K. Nakano, G. Narita, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, and A. Bandoh, “Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers,” J. Cryst. Growth 298, 257–260 (2007).
[Crossref]

Bandoh, A.

M. Imura, K. Nakano, G. Narita, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, and A. Bandoh, “Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers,” J. Cryst. Growth 298, 257–260 (2007).
[Crossref]

Bi, W.

Brunner, F.

V. Kueller, A. Knauer, F. Brunner, U. Zeimer, H. Rodriguez, M. Kneissl, and M. Weyers, “Growth of AlGaN and AlN on patterned AlN/sapphire templates,” J. Cryst. Growth 315(1), 200–203 (2011).
[Crossref]

Cai, J.

Caissie, J.

R. S. Q. Fareed, V. Adivarahan, C. Q. Chen, S. Rai, E. Kuokstis, J. W. Yang, M. A. Khan, J. Caissie, and R. J. Molnar, “Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN,” Appl. Phys. Lett. 84(5), 696–698 (2004).
[Crossref]

Chang, S.-J.

W.-C. Lai, C.-H. Yen, J.-Z. Li, Y.-Y. Yang, H.-E. Cheng, S.-J. Chang, and S. Li, “GaN-Based Light-Emitting Diodes on Electrochemically Etched GaN Template,” IEEE Photonics Technol. Lett. 25(15), 1531–1534 (2013).
[Crossref]

Chen, C.

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D Appl. Phys. 50(24), 245101 (2017).
[Crossref]

Chen, C. Q.

R. S. Q. Fareed, V. Adivarahan, C. Q. Chen, S. Rai, E. Kuokstis, J. W. Yang, M. A. Khan, J. Caissie, and R. J. Molnar, “Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN,” Appl. Phys. Lett. 84(5), 696–698 (2004).
[Crossref]

Chen, X.

S. Zhang, Y. Zhang, X. Chen, Y. Guo, J. Yan, J. Wang, and J. Li, “The effect of AlN/AlGaN superlattices on crystal and optical properties of AlGaN epitaxial layers,” Journal of Semiconductors 38(11), 112002 (2017).
[Crossref]

Y. Guo, Y. Zhang, J. Yan, H. Xie, L. Liu, X. Chen, M. Hou, Z. Qin, J. Wang, and J. Li, “Light extraction enhancement of AlGaN-based ultraviolet light-emitting diodes by substrate sidewall roughening,” Appl. Phys. Lett. 111(1), 011102 (2017).
[Crossref] [PubMed]

Y. Tian, J. Yan, Y. Zhang, X. Chen, Y. Guo, P. Cong, L. Sun, Q. Wang, E. Guo, X. Wei, J. Wang, and J. Li, “Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser,” Opt. Express 23(9), 11334–11340 (2015).
[Crossref] [PubMed]

Chen, Y.-Y.

G.-J. Wang, B.-S. Hong, Y.-Y. Chen, Z.-J. Yang, T.-L. Tsai, Y.-S. Lin, and C.-F. Lin, “GaN/AlGaN ultraviolet light-emitting diode with an embedded porous-AlGaN distributed Bragg reflector,” Appl. Phys. Express 10(12), 122102 (2017).
[Crossref]

Cheng, H.-E.

W.-C. Lai, C.-H. Yen, J.-Z. Li, Y.-Y. Yang, H.-E. Cheng, S.-J. Chang, and S. Li, “GaN-Based Light-Emitting Diodes on Electrochemically Etched GaN Template,” IEEE Photonics Technol. Lett. 25(15), 1531–1534 (2013).
[Crossref]

Chow, S. Y.

H. Hartono, C. B. Soh, S. Y. Chow, S. J. Chua, and E. A. Fitzgerald, “Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template,” Appl. Phys. Lett. 90(17), 171917 (2007).
[Crossref]

Chua, S. J.

H. Hartono, C. B. Soh, S. Y. Chow, S. J. Chua, and E. A. Fitzgerald, “Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template,” Appl. Phys. Lett. 90(17), 171917 (2007).
[Crossref]

Cong, P.

Y. Tian, J. Yan, Y. Zhang, X. Chen, Y. Guo, P. Cong, L. Sun, Q. Wang, E. Guo, X. Wei, J. Wang, and J. Li, “Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser,” Opt. Express 23(9), 11334–11340 (2015).
[Crossref] [PubMed]

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

Dai, J.

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D Appl. Phys. 50(24), 245101 (2017).
[Crossref]

Davydov, V. Y.

V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
[Crossref]

Djavid, M.

S. Zhao, M. Djavid, and Z. Mi, “Surface emitting, high efficiency near-vacuum ultraviolet light source with aluminum nitride nanowires monolithically grown on silicon,” Nano Lett. 15(10), 7006–7009 (2015).
[Crossref] [PubMed]

Dong, P.

P. Dong, J. Yan, Y. Zhang, J. Wang, C. Geng, H. Zheng, X. Wei, Q. Yan, and J. Li, “Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes,” Opt. Express 22(S2Suppl 2), A320–A327 (2014).
[Crossref]

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

El-Desouki, M. M.

Fan, S.

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

Fan, Z. Y.

M. Khizar, Z. Y. Fan, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Nitride deep-ultraviolet light-emitting diodes with microlens array,” Appl. Phys. Lett. 86(17), 173504 (2005).
[Crossref]

Fareed, R. S. Q.

R. S. Q. Fareed, V. Adivarahan, C. Q. Chen, S. Rai, E. Kuokstis, J. W. Yang, M. A. Khan, J. Caissie, and R. J. Molnar, “Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN,” Appl. Phys. Lett. 84(5), 696–698 (2004).
[Crossref]

Feng, Z. C.

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D Appl. Phys. 50(24), 245101 (2017).
[Crossref]

Fitzgerald, E. A.

H. Hartono, C. B. Soh, S. Y. Chow, S. J. Chua, and E. A. Fitzgerald, “Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template,” Appl. Phys. Lett. 90(17), 171917 (2007).
[Crossref]

Fujimoto, N.

M. Imura, K. Nakano, G. Narita, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, and A. Bandoh, “Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers,” J. Cryst. Growth 298, 257–260 (2007).
[Crossref]

Galan, S. V.

Gao, Y.

J. Zhang, Y. Gao, L. Zhou, Y.-U. Gil, and K.-M. Kim, “Surface hole gas enabled transparent deep ultraviolet light-emitting diode,” Semicond. Sci. Technol. 33(7), 07LT01 (2018).
[Crossref]

Ge, W.

C. He, Z. Qin, F. Xu, M. Hou, S. Zhang, L. Zhang, X. Wang, W. Ge, and B. Shen, “Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers,” Sci. Rep. 5(1), 13046 (2015).
[Crossref] [PubMed]

Geng, C.

P. Dong, J. Yan, Y. Zhang, J. Wang, C. Geng, H. Zheng, X. Wei, Q. Yan, and J. Li, “Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes,” Opt. Express 22(S2Suppl 2), A320–A327 (2014).
[Crossref]

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

Gil, Y.-U.

J. Zhang, Y. Gao, L. Zhou, Y.-U. Gil, and K.-M. Kim, “Surface hole gas enabled transparent deep ultraviolet light-emitting diode,” Semicond. Sci. Technol. 33(7), 07LT01 (2018).
[Crossref]

Goncharuk, I. N.

V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
[Crossref]

Graul, J.

V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
[Crossref]

Guo, C.

D. Li, K. Jiang, X. Sun, and C. Guo, “AlGaN photonics: recent advances in materials and ultraviolet devices,” Adv. Opt. Photonics 10(1), 43 (2018).
[Crossref]

Guo, E.

Y. Tian, J. Yan, Y. Zhang, X. Chen, Y. Guo, P. Cong, L. Sun, Q. Wang, E. Guo, X. Wei, J. Wang, and J. Li, “Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser,” Opt. Express 23(9), 11334–11340 (2015).
[Crossref] [PubMed]

A. Zhen, P. Ma, Y. Zhang, E. Guo, Y. Tian, B. Liu, S. Guo, L. Shan, J. Wang, and J. Li, “Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode,” Appl. Phys. Lett. 105(25), 251103 (2014).
[Crossref]

Guo, S.

A. Zhen, P. Ma, Y. Zhang, E. Guo, Y. Tian, B. Liu, S. Guo, L. Shan, J. Wang, and J. Li, “Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode,” Appl. Phys. Lett. 105(25), 251103 (2014).
[Crossref]

Guo, W.

L. Zhang, F. Xu, J. Wang, C. He, W. Guo, M. Wang, B. Sheng, L. Lu, Z. Qin, X. Wang, and B. Shen, “High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography,” Sci. Rep. 6(1), 35934 (2016).
[Crossref] [PubMed]

Guo, Y.

Y. Guo, J. Yan, Y. Zhang, J. Wang, and J. Li, “Enhancing the light extraction of AlGaN-based ultraviolet light-emitting diodes in the nanoscale,” J. Nanophotonics 12(04), 1 (2018).
[Crossref]

L. Zhang, J. Yan, Q. Wu, Y. Guo, C. Yang, T. Wei, Z. Liu, G. Yuan, X. Wei, L. Zhao, Y. Zhang, J. Li, and J. Wang, “Improved crystalline quality of Al-rich n-AlGaN by regrowth on nanoporous template fabricated by electrochemical etching,” J. Nanophotonics 12(04), 1 (2018).
[Crossref]

Y. Guo, Y. Zhang, J. Yan, H. Xie, L. Liu, X. Chen, M. Hou, Z. Qin, J. Wang, and J. Li, “Light extraction enhancement of AlGaN-based ultraviolet light-emitting diodes by substrate sidewall roughening,” Appl. Phys. Lett. 111(1), 011102 (2017).
[Crossref] [PubMed]

S. Zhang, Y. Zhang, X. Chen, Y. Guo, J. Yan, J. Wang, and J. Li, “The effect of AlN/AlGaN superlattices on crystal and optical properties of AlGaN epitaxial layers,” Journal of Semiconductors 38(11), 112002 (2017).
[Crossref]

Y. Tian, J. Yan, Y. Zhang, X. Chen, Y. Guo, P. Cong, L. Sun, Q. Wang, E. Guo, X. Wei, J. Wang, and J. Li, “Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser,” Opt. Express 23(9), 11334–11340 (2015).
[Crossref] [PubMed]

Han, J.

C. D. Yerino, Y. Zhang, B. Leung, M. L. Lee, T.-C. Hsu, C.-K. Wang, W.-C. Peng, and J. Han, “Shape transformation of nanoporous GaN by annealing: From buried cavities to nanomembranes,” Appl. Phys. Lett. 98(25), 251910 (2011).
[Crossref]

Harima, H.

V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
[Crossref]

Hartono, H.

H. Hartono, C. B. Soh, S. Y. Chow, S. J. Chua, and E. A. Fitzgerald, “Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template,” Appl. Phys. Lett. 90(17), 171917 (2007).
[Crossref]

He, C.

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G.-J. Wang, B.-S. Hong, Y.-Y. Chen, Z.-J. Yang, T.-L. Tsai, Y.-S. Lin, and C.-F. Lin, “GaN/AlGaN ultraviolet light-emitting diode with an embedded porous-AlGaN distributed Bragg reflector,” Appl. Phys. Express 10(12), 122102 (2017).
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R. Lin, S. V. Galan, H. Sun, Y. Hu, M. S. Alias, B. Janjua, T. K. Ng, B. S. Ooi, and X. Li, “Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations,” Photon. Res. 6(5), 457 (2018).
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M. S. Alias, B. Janjua, C. Zhao, D. Priante, A. A. Alhamoud, M. Tangi, L. M. Alanazi, A. A. Alatawi, A. M. Albadri, A. Y. Alyamani, T. K. Ng, and B. S. Ooi, “Enhancing the Light-Extraction Efficiency of an AlGaN Nanowire Ultraviolet Light-Emitting Diode by Using Nitride/Air Distributed Bragg Reflector Nanogratings,” IEEE Photonics J. 9(5), 1–8 (2017).
[Crossref]

B. Janjua, H. Sun, C. Zhao, D. H. Anjum, D. Priante, A. A. Alhamoud, F. Wu, X. Li, A. M. Albadri, A. Y. Alyamani, M. M. El-Desouki, T. K. Ng, and B. S. Ooi, “Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates,” Opt. Express 25(2), 1381–1390 (2017).
[Crossref] [PubMed]

Nikolaev, A. E.

V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
[Crossref]

Noguchi, N.

T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10(3), 031002 (2017).
[Crossref]

Noh, H.-S.

D. Lee, J. W. Lee, J. Jang, I.-S. Shin, L. Jin, J. H. Park, J. Kim, J. Lee, H.-S. Noh, Y.-I. Kim, Y. Park, G.-D. Lee, Y. Park, J. K. Kim, and E. Yoon, “Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates,” Appl. Phys. Lett. 110(19), 191103 (2017).
[Crossref]

Noro, T.

M. Imura, K. Nakano, G. Narita, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, and A. Bandoh, “Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers,” J. Cryst. Growth 298, 257–260 (2007).
[Crossref]

Okada, N.

M. Imura, K. Nakano, G. Narita, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, and A. Bandoh, “Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers,” J. Cryst. Growth 298, 257–260 (2007).
[Crossref]

Ooi, B. S.

B. S. Ooi, T. K. Ng, M. K. Shakfa, D. Priante, R. C. Subedi, I. Ashry, A. A. Alatawi, E. Stegenburgs, J. A. Holguin-Lerma, M. Tangi, and M. S. Alias, “Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices,” J. Nanophotonics 12, 1 (2018).

R. Lin, S. V. Galan, H. Sun, Y. Hu, M. S. Alias, B. Janjua, T. K. Ng, B. S. Ooi, and X. Li, “Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations,” Photon. Res. 6(5), 457 (2018).
[Crossref]

M. S. Alias, B. Janjua, C. Zhao, D. Priante, A. A. Alhamoud, M. Tangi, L. M. Alanazi, A. A. Alatawi, A. M. Albadri, A. Y. Alyamani, T. K. Ng, and B. S. Ooi, “Enhancing the Light-Extraction Efficiency of an AlGaN Nanowire Ultraviolet Light-Emitting Diode by Using Nitride/Air Distributed Bragg Reflector Nanogratings,” IEEE Photonics J. 9(5), 1–8 (2017).
[Crossref]

B. Janjua, H. Sun, C. Zhao, D. H. Anjum, D. Priante, A. A. Alhamoud, F. Wu, X. Li, A. M. Albadri, A. Y. Alyamani, M. M. El-Desouki, T. K. Ng, and B. S. Ooi, “Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates,” Opt. Express 25(2), 1381–1390 (2017).
[Crossref] [PubMed]

Park, H. J.

Park, J. H.

D. Lee, J. W. Lee, J. Jang, I.-S. Shin, L. Jin, J. H. Park, J. Kim, J. Lee, H.-S. Noh, Y.-I. Kim, Y. Park, G.-D. Lee, Y. Park, J. K. Kim, and E. Yoon, “Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates,” Appl. Phys. Lett. 110(19), 191103 (2017).
[Crossref]

Park, S. J.

Park, Y.

D. Lee, J. W. Lee, J. Jang, I.-S. Shin, L. Jin, J. H. Park, J. Kim, J. Lee, H.-S. Noh, Y.-I. Kim, Y. Park, G.-D. Lee, Y. Park, J. K. Kim, and E. Yoon, “Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates,” Appl. Phys. Lett. 110(19), 191103 (2017).
[Crossref]

D. Lee, J. W. Lee, J. Jang, I.-S. Shin, L. Jin, J. H. Park, J. Kim, J. Lee, H.-S. Noh, Y.-I. Kim, Y. Park, G.-D. Lee, Y. Park, J. K. Kim, and E. Yoon, “Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates,” Appl. Phys. Lett. 110(19), 191103 (2017).
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Peng, W.-C.

C. D. Yerino, Y. Zhang, B. Leung, M. L. Lee, T.-C. Hsu, C.-K. Wang, W.-C. Peng, and J. Han, “Shape transformation of nanoporous GaN by annealing: From buried cavities to nanomembranes,” Appl. Phys. Lett. 98(25), 251910 (2011).
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Priante, D.

B. S. Ooi, T. K. Ng, M. K. Shakfa, D. Priante, R. C. Subedi, I. Ashry, A. A. Alatawi, E. Stegenburgs, J. A. Holguin-Lerma, M. Tangi, and M. S. Alias, “Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices,” J. Nanophotonics 12, 1 (2018).

B. Janjua, H. Sun, C. Zhao, D. H. Anjum, D. Priante, A. A. Alhamoud, F. Wu, X. Li, A. M. Albadri, A. Y. Alyamani, M. M. El-Desouki, T. K. Ng, and B. S. Ooi, “Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates,” Opt. Express 25(2), 1381–1390 (2017).
[Crossref] [PubMed]

M. S. Alias, B. Janjua, C. Zhao, D. Priante, A. A. Alhamoud, M. Tangi, L. M. Alanazi, A. A. Alatawi, A. M. Albadri, A. Y. Alyamani, T. K. Ng, and B. S. Ooi, “Enhancing the Light-Extraction Efficiency of an AlGaN Nanowire Ultraviolet Light-Emitting Diode by Using Nitride/Air Distributed Bragg Reflector Nanogratings,” IEEE Photonics J. 9(5), 1–8 (2017).
[Crossref]

Qin, Z.

Y. Guo, Y. Zhang, J. Yan, H. Xie, L. Liu, X. Chen, M. Hou, Z. Qin, J. Wang, and J. Li, “Light extraction enhancement of AlGaN-based ultraviolet light-emitting diodes by substrate sidewall roughening,” Appl. Phys. Lett. 111(1), 011102 (2017).
[Crossref] [PubMed]

L. Zhang, F. Xu, J. Wang, C. He, W. Guo, M. Wang, B. Sheng, L. Lu, Z. Qin, X. Wang, and B. Shen, “High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography,” Sci. Rep. 6(1), 35934 (2016).
[Crossref] [PubMed]

C. He, Z. Qin, F. Xu, M. Hou, S. Zhang, L. Zhang, X. Wang, W. Ge, and B. Shen, “Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers,” Sci. Rep. 5(1), 13046 (2015).
[Crossref] [PubMed]

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

M. Hou, Z. Qin, C. He, J. Cai, X. Wang, and B. Shen, “Effect of injection current on the optical polarization of AlGaN-based ultraviolet light-emitting diodes,” Opt. Express 22(16), 19589–19594 (2014).
[Crossref] [PubMed]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

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R. S. Q. Fareed, V. Adivarahan, C. Q. Chen, S. Rai, E. Kuokstis, J. W. Yang, M. A. Khan, J. Caissie, and R. J. Molnar, “Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN,” Appl. Phys. Lett. 84(5), 696–698 (2004).
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V. Kueller, A. Knauer, F. Brunner, U. Zeimer, H. Rodriguez, M. Kneissl, and M. Weyers, “Growth of AlGaN and AlN on patterned AlN/sapphire templates,” J. Cryst. Growth 315(1), 200–203 (2011).
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F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D Appl. Phys. 50(24), 245101 (2017).
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Ryu, H.-Y.

H.-Y. Ryu, “Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures,” Nanoscale Res. Lett. 9(1), 58 (2014).
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Sakai, J.

T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10(3), 031002 (2017).
[Crossref]

Semchinova, O.

V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
[Crossref]

Shakfa, M. K.

B. S. Ooi, T. K. Ng, M. K. Shakfa, D. Priante, R. C. Subedi, I. Ashry, A. A. Alatawi, E. Stegenburgs, J. A. Holguin-Lerma, M. Tangi, and M. S. Alias, “Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices,” J. Nanophotonics 12, 1 (2018).

Shan, L.

A. Zhen, P. Ma, Y. Zhang, E. Guo, Y. Tian, B. Liu, S. Guo, L. Shan, J. Wang, and J. Li, “Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode,” Appl. Phys. Lett. 105(25), 251103 (2014).
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Shen, B.

Z. H. Zhang, L. Li, Y. Zhang, F. Xu, Q. Shi, B. Shen, and W. Bi, “On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes,” Opt. Express 25(14), 16550–16559 (2017).
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L. Zhang, F. Xu, J. Wang, C. He, W. Guo, M. Wang, B. Sheng, L. Lu, Z. Qin, X. Wang, and B. Shen, “High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography,” Sci. Rep. 6(1), 35934 (2016).
[Crossref] [PubMed]

C. He, Z. Qin, F. Xu, M. Hou, S. Zhang, L. Zhang, X. Wang, W. Ge, and B. Shen, “Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers,” Sci. Rep. 5(1), 13046 (2015).
[Crossref] [PubMed]

M. Hou, Z. Qin, C. He, J. Cai, X. Wang, and B. Shen, “Effect of injection current on the optical polarization of AlGaN-based ultraviolet light-emitting diodes,” Opt. Express 22(16), 19589–19594 (2014).
[Crossref] [PubMed]

Sheng, B.

L. Zhang, F. Xu, J. Wang, C. He, W. Guo, M. Wang, B. Sheng, L. Lu, Z. Qin, X. Wang, and B. Shen, “High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography,” Sci. Rep. 6(1), 35934 (2016).
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Shi, Q.

Shimizu, R.

K. Sudoh, H. Iwasaki, R. Hiruta, H. Kuribayashi, and R. Shimizu, “Void shape evolution and formation of silicon-on-nothing structures during hydrogen annealing of hole arrays on Si(001),” J. Appl. Phys. 105(8), 083536 (2009).
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Shin, H. W.

T. H. Lee, B. R. Lee, K. R. Son, H. W. Shin, and T. G. Kim, “Highly Efficient Deep-UV Light-Emitting Diodes Using AlN-Based Deep-UV-Transparent Glass Electrodes,” ACS Appl. Mater. Interfaces 9(50), 43774–43781 (2017).
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D. Lee, J. W. Lee, J. Jang, I.-S. Shin, L. Jin, J. H. Park, J. Kim, J. Lee, H.-S. Noh, Y.-I. Kim, Y. Park, G.-D. Lee, Y. Park, J. K. Kim, and E. Yoon, “Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates,” Appl. Phys. Lett. 110(19), 191103 (2017).
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Smirnov, A. N.

V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
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H. Hartono, C. B. Soh, S. Y. Chow, S. J. Chua, and E. A. Fitzgerald, “Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template,” Appl. Phys. Lett. 90(17), 171917 (2007).
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T. H. Lee, B. R. Lee, K. R. Son, H. W. Shin, and T. G. Kim, “Highly Efficient Deep-UV Light-Emitting Diodes Using AlN-Based Deep-UV-Transparent Glass Electrodes,” ACS Appl. Mater. Interfaces 9(50), 43774–43781 (2017).
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Stegenburgs, E.

B. S. Ooi, T. K. Ng, M. K. Shakfa, D. Priante, R. C. Subedi, I. Ashry, A. A. Alatawi, E. Stegenburgs, J. A. Holguin-Lerma, M. Tangi, and M. S. Alias, “Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices,” J. Nanophotonics 12, 1 (2018).

Subedi, R. C.

B. S. Ooi, T. K. Ng, M. K. Shakfa, D. Priante, R. C. Subedi, I. Ashry, A. A. Alatawi, E. Stegenburgs, J. A. Holguin-Lerma, M. Tangi, and M. S. Alias, “Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices,” J. Nanophotonics 12, 1 (2018).

Sudoh, K.

K. Sudoh, H. Iwasaki, R. Hiruta, H. Kuribayashi, and R. Shimizu, “Void shape evolution and formation of silicon-on-nothing structures during hydrogen annealing of hole arrays on Si(001),” J. Appl. Phys. 105(8), 083536 (2009).
[Crossref]

Sun, H.

Sun, L.

Y. Tian, J. Yan, Y. Zhang, X. Chen, Y. Guo, P. Cong, L. Sun, Q. Wang, E. Guo, X. Wei, J. Wang, and J. Li, “Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser,” Opt. Express 23(9), 11334–11340 (2015).
[Crossref] [PubMed]

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
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Sun, X.

D. Li, K. Jiang, X. Sun, and C. Guo, “AlGaN photonics: recent advances in materials and ultraviolet devices,” Adv. Opt. Photonics 10(1), 43 (2018).
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Takagi, T.

M. Imura, K. Nakano, G. Narita, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, and A. Bandoh, “Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers,” J. Cryst. Growth 298, 257–260 (2007).
[Crossref]

Takano, T.

T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10(3), 031002 (2017).
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Tamari, N.

S.-i. Inoue, N. Tamari, and M. Taniguchi, “150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm,” Appl. Phys. Lett. 110(14), 141106 (2017).
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Tangi, M.

B. S. Ooi, T. K. Ng, M. K. Shakfa, D. Priante, R. C. Subedi, I. Ashry, A. A. Alatawi, E. Stegenburgs, J. A. Holguin-Lerma, M. Tangi, and M. S. Alias, “Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices,” J. Nanophotonics 12, 1 (2018).

M. S. Alias, B. Janjua, C. Zhao, D. Priante, A. A. Alhamoud, M. Tangi, L. M. Alanazi, A. A. Alatawi, A. M. Albadri, A. Y. Alyamani, T. K. Ng, and B. S. Ooi, “Enhancing the Light-Extraction Efficiency of an AlGaN Nanowire Ultraviolet Light-Emitting Diode by Using Nitride/Air Distributed Bragg Reflector Nanogratings,” IEEE Photonics J. 9(5), 1–8 (2017).
[Crossref]

Taniguchi, M.

S.-i. Inoue, N. Tamari, and M. Taniguchi, “150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm,” Appl. Phys. Lett. 110(14), 141106 (2017).
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Tian, Y.

Y. Tian, J. Yan, Y. Zhang, X. Chen, Y. Guo, P. Cong, L. Sun, Q. Wang, E. Guo, X. Wei, J. Wang, and J. Li, “Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser,” Opt. Express 23(9), 11334–11340 (2015).
[Crossref] [PubMed]

A. Zhen, P. Ma, Y. Zhang, E. Guo, Y. Tian, B. Liu, S. Guo, L. Shan, J. Wang, and J. Li, “Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode,” Appl. Phys. Lett. 105(25), 251103 (2014).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
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L. Jinmin, L. Zhe, L. Zhiqiang, Y. Jianchang, W. Tongbo, Y. Xiaoyan, and W. Junxi, “Advances and prospects in nitrides based light-emitting-diodes,” Journal of Semiconductors 37(6), 061001 (2016).
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G.-J. Wang, B.-S. Hong, Y.-Y. Chen, Z.-J. Yang, T.-L. Tsai, Y.-S. Lin, and C.-F. Lin, “GaN/AlGaN ultraviolet light-emitting diode with an embedded porous-AlGaN distributed Bragg reflector,” Appl. Phys. Express 10(12), 122102 (2017).
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Tsubaki, K.

T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10(3), 031002 (2017).
[Crossref]

Usikov, A. S.

V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
[Crossref]

Wang, C.-K.

C. D. Yerino, Y. Zhang, B. Leung, M. L. Lee, T.-C. Hsu, C.-K. Wang, W.-C. Peng, and J. Han, “Shape transformation of nanoporous GaN by annealing: From buried cavities to nanomembranes,” Appl. Phys. Lett. 98(25), 251910 (2011).
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Wang, G.-J.

G.-J. Wang, B.-S. Hong, Y.-Y. Chen, Z.-J. Yang, T.-L. Tsai, Y.-S. Lin, and C.-F. Lin, “GaN/AlGaN ultraviolet light-emitting diode with an embedded porous-AlGaN distributed Bragg reflector,” Appl. Phys. Express 10(12), 122102 (2017).
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Wang, J.

Y. Guo, J. Yan, Y. Zhang, J. Wang, and J. Li, “Enhancing the light extraction of AlGaN-based ultraviolet light-emitting diodes in the nanoscale,” J. Nanophotonics 12(04), 1 (2018).
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L. Zhang, J. Yan, Q. Wu, Y. Guo, C. Yang, T. Wei, Z. Liu, G. Yuan, X. Wei, L. Zhao, Y. Zhang, J. Li, and J. Wang, “Improved crystalline quality of Al-rich n-AlGaN by regrowth on nanoporous template fabricated by electrochemical etching,” J. Nanophotonics 12(04), 1 (2018).
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Y. Guo, Y. Zhang, J. Yan, H. Xie, L. Liu, X. Chen, M. Hou, Z. Qin, J. Wang, and J. Li, “Light extraction enhancement of AlGaN-based ultraviolet light-emitting diodes by substrate sidewall roughening,” Appl. Phys. Lett. 111(1), 011102 (2017).
[Crossref] [PubMed]

S. Zhang, Y. Zhang, X. Chen, Y. Guo, J. Yan, J. Wang, and J. Li, “The effect of AlN/AlGaN superlattices on crystal and optical properties of AlGaN epitaxial layers,” Journal of Semiconductors 38(11), 112002 (2017).
[Crossref]

L. Zhang, F. Xu, J. Wang, C. He, W. Guo, M. Wang, B. Sheng, L. Lu, Z. Qin, X. Wang, and B. Shen, “High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography,” Sci. Rep. 6(1), 35934 (2016).
[Crossref] [PubMed]

Y. Tian, J. Yan, Y. Zhang, X. Chen, Y. Guo, P. Cong, L. Sun, Q. Wang, E. Guo, X. Wei, J. Wang, and J. Li, “Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser,” Opt. Express 23(9), 11334–11340 (2015).
[Crossref] [PubMed]

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

P. Dong, J. Yan, Y. Zhang, J. Wang, C. Geng, H. Zheng, X. Wei, Q. Yan, and J. Li, “Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes,” Opt. Express 22(S2Suppl 2), A320–A327 (2014).
[Crossref]

A. Zhen, P. Ma, Y. Zhang, E. Guo, Y. Tian, B. Liu, S. Guo, L. Shan, J. Wang, and J. Li, “Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode,” Appl. Phys. Lett. 105(25), 251103 (2014).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

Wang, K.

Wang, M.

L. Zhang, F. Xu, J. Wang, C. He, W. Guo, M. Wang, B. Sheng, L. Lu, Z. Qin, X. Wang, and B. Shen, “High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography,” Sci. Rep. 6(1), 35934 (2016).
[Crossref] [PubMed]

Wang, Q.

Wang, X.

L. Zhang, F. Xu, J. Wang, C. He, W. Guo, M. Wang, B. Sheng, L. Lu, Z. Qin, X. Wang, and B. Shen, “High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography,” Sci. Rep. 6(1), 35934 (2016).
[Crossref] [PubMed]

C. He, Z. Qin, F. Xu, M. Hou, S. Zhang, L. Zhang, X. Wang, W. Ge, and B. Shen, “Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers,” Sci. Rep. 5(1), 13046 (2015).
[Crossref] [PubMed]

M. Hou, Z. Qin, C. He, J. Cai, X. Wang, and B. Shen, “Effect of injection current on the optical polarization of AlGaN-based ultraviolet light-emitting diodes,” Opt. Express 22(16), 19589–19594 (2014).
[Crossref] [PubMed]

Wei, T.

L. Zhang, J. Yan, Q. Wu, Y. Guo, C. Yang, T. Wei, Z. Liu, G. Yuan, X. Wei, L. Zhao, Y. Zhang, J. Li, and J. Wang, “Improved crystalline quality of Al-rich n-AlGaN by regrowth on nanoporous template fabricated by electrochemical etching,” J. Nanophotonics 12(04), 1 (2018).
[Crossref]

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

Wei, X.

Weyers, M.

V. Kueller, A. Knauer, F. Brunner, U. Zeimer, H. Rodriguez, M. Kneissl, and M. Weyers, “Growth of AlGaN and AlN on patterned AlN/sapphire templates,” J. Cryst. Growth 315(1), 200–203 (2011).
[Crossref]

Wu, F.

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D Appl. Phys. 50(24), 245101 (2017).
[Crossref]

B. Janjua, H. Sun, C. Zhao, D. H. Anjum, D. Priante, A. A. Alhamoud, F. Wu, X. Li, A. M. Albadri, A. Y. Alyamani, M. M. El-Desouki, T. K. Ng, and B. S. Ooi, “Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates,” Opt. Express 25(2), 1381–1390 (2017).
[Crossref] [PubMed]

Wu, Q.

L. Zhang, J. Yan, Q. Wu, Y. Guo, C. Yang, T. Wei, Z. Liu, G. Yuan, X. Wei, L. Zhao, Y. Zhang, J. Li, and J. Wang, “Improved crystalline quality of Al-rich n-AlGaN by regrowth on nanoporous template fabricated by electrochemical etching,” J. Nanophotonics 12(04), 1 (2018).
[Crossref]

Xiaoyan, Y.

L. Jinmin, L. Zhe, L. Zhiqiang, Y. Jianchang, W. Tongbo, Y. Xiaoyan, and W. Junxi, “Advances and prospects in nitrides based light-emitting-diodes,” Journal of Semiconductors 37(6), 061001 (2016).
[Crossref]

Xie, H.

Y. Guo, Y. Zhang, J. Yan, H. Xie, L. Liu, X. Chen, M. Hou, Z. Qin, J. Wang, and J. Li, “Light extraction enhancement of AlGaN-based ultraviolet light-emitting diodes by substrate sidewall roughening,” Appl. Phys. Lett. 111(1), 011102 (2017).
[Crossref] [PubMed]

Xu, F.

Z. H. Zhang, L. Li, Y. Zhang, F. Xu, Q. Shi, B. Shen, and W. Bi, “On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes,” Opt. Express 25(14), 16550–16559 (2017).
[Crossref] [PubMed]

L. Zhang, F. Xu, J. Wang, C. He, W. Guo, M. Wang, B. Sheng, L. Lu, Z. Qin, X. Wang, and B. Shen, “High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography,” Sci. Rep. 6(1), 35934 (2016).
[Crossref] [PubMed]

C. He, Z. Qin, F. Xu, M. Hou, S. Zhang, L. Zhang, X. Wang, W. Ge, and B. Shen, “Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers,” Sci. Rep. 5(1), 13046 (2015).
[Crossref] [PubMed]

Yan, J.

L. Zhang, J. Yan, Q. Wu, Y. Guo, C. Yang, T. Wei, Z. Liu, G. Yuan, X. Wei, L. Zhao, Y. Zhang, J. Li, and J. Wang, “Improved crystalline quality of Al-rich n-AlGaN by regrowth on nanoporous template fabricated by electrochemical etching,” J. Nanophotonics 12(04), 1 (2018).
[Crossref]

Y. Guo, J. Yan, Y. Zhang, J. Wang, and J. Li, “Enhancing the light extraction of AlGaN-based ultraviolet light-emitting diodes in the nanoscale,” J. Nanophotonics 12(04), 1 (2018).
[Crossref]

Y. Guo, Y. Zhang, J. Yan, H. Xie, L. Liu, X. Chen, M. Hou, Z. Qin, J. Wang, and J. Li, “Light extraction enhancement of AlGaN-based ultraviolet light-emitting diodes by substrate sidewall roughening,” Appl. Phys. Lett. 111(1), 011102 (2017).
[Crossref] [PubMed]

S. Zhang, Y. Zhang, X. Chen, Y. Guo, J. Yan, J. Wang, and J. Li, “The effect of AlN/AlGaN superlattices on crystal and optical properties of AlGaN epitaxial layers,” Journal of Semiconductors 38(11), 112002 (2017).
[Crossref]

Y. Tian, J. Yan, Y. Zhang, X. Chen, Y. Guo, P. Cong, L. Sun, Q. Wang, E. Guo, X. Wei, J. Wang, and J. Li, “Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser,” Opt. Express 23(9), 11334–11340 (2015).
[Crossref] [PubMed]

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

P. Dong, J. Yan, Y. Zhang, J. Wang, C. Geng, H. Zheng, X. Wei, Q. Yan, and J. Li, “Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes,” Opt. Express 22(S2Suppl 2), A320–A327 (2014).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

Yan, Q.

P. Dong, J. Yan, Y. Zhang, J. Wang, C. Geng, H. Zheng, X. Wei, Q. Yan, and J. Li, “Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes,” Opt. Express 22(S2Suppl 2), A320–A327 (2014).
[Crossref]

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

Yang, C.

L. Zhang, J. Yan, Q. Wu, Y. Guo, C. Yang, T. Wei, Z. Liu, G. Yuan, X. Wei, L. Zhao, Y. Zhang, J. Li, and J. Wang, “Improved crystalline quality of Al-rich n-AlGaN by regrowth on nanoporous template fabricated by electrochemical etching,” J. Nanophotonics 12(04), 1 (2018).
[Crossref]

Yang, J. W.

R. S. Q. Fareed, V. Adivarahan, C. Q. Chen, S. Rai, E. Kuokstis, J. W. Yang, M. A. Khan, J. Caissie, and R. J. Molnar, “Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN,” Appl. Phys. Lett. 84(5), 696–698 (2004).
[Crossref]

Yang, Y.-Y.

W.-C. Lai, C.-H. Yen, J.-Z. Li, Y.-Y. Yang, H.-E. Cheng, S.-J. Chang, and S. Li, “GaN-Based Light-Emitting Diodes on Electrochemically Etched GaN Template,” IEEE Photonics Technol. Lett. 25(15), 1531–1534 (2013).
[Crossref]

Yang, Z.-J.

G.-J. Wang, B.-S. Hong, Y.-Y. Chen, Z.-J. Yang, T.-L. Tsai, Y.-S. Lin, and C.-F. Lin, “GaN/AlGaN ultraviolet light-emitting diode with an embedded porous-AlGaN distributed Bragg reflector,” Appl. Phys. Express 10(12), 122102 (2017).
[Crossref]

Yen, C.-H.

W.-C. Lai, C.-H. Yen, J.-Z. Li, Y.-Y. Yang, H.-E. Cheng, S.-J. Chang, and S. Li, “GaN-Based Light-Emitting Diodes on Electrochemically Etched GaN Template,” IEEE Photonics Technol. Lett. 25(15), 1531–1534 (2013).
[Crossref]

Yerino, C. D.

C. D. Yerino, Y. Zhang, B. Leung, M. L. Lee, T.-C. Hsu, C.-K. Wang, W.-C. Peng, and J. Han, “Shape transformation of nanoporous GaN by annealing: From buried cavities to nanomembranes,” Appl. Phys. Lett. 98(25), 251910 (2011).
[Crossref]

Yoon, E.

D. Lee, J. W. Lee, J. Jang, I.-S. Shin, L. Jin, J. H. Park, J. Kim, J. Lee, H.-S. Noh, Y.-I. Kim, Y. Park, G.-D. Lee, Y. Park, J. K. Kim, and E. Yoon, “Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates,” Appl. Phys. Lett. 110(19), 191103 (2017).
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Yuan, G.

L. Zhang, J. Yan, Q. Wu, Y. Guo, C. Yang, T. Wei, Z. Liu, G. Yuan, X. Wei, L. Zhao, Y. Zhang, J. Li, and J. Wang, “Improved crystalline quality of Al-rich n-AlGaN by regrowth on nanoporous template fabricated by electrochemical etching,” J. Nanophotonics 12(04), 1 (2018).
[Crossref]

Zeimer, U.

V. Kueller, A. Knauer, F. Brunner, U. Zeimer, H. Rodriguez, M. Kneissl, and M. Weyers, “Growth of AlGaN and AlN on patterned AlN/sapphire templates,” J. Cryst. Growth 315(1), 200–203 (2011).
[Crossref]

Zeng, J.

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

Zhang, D.

F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D Appl. Phys. 50(24), 245101 (2017).
[Crossref]

Zhang, J.

J. Zhang, Y. Gao, L. Zhou, Y.-U. Gil, and K.-M. Kim, “Surface hole gas enabled transparent deep ultraviolet light-emitting diode,” Semicond. Sci. Technol. 33(7), 07LT01 (2018).
[Crossref]

Zhang, L.

L. Zhang, J. Yan, Q. Wu, Y. Guo, C. Yang, T. Wei, Z. Liu, G. Yuan, X. Wei, L. Zhao, Y. Zhang, J. Li, and J. Wang, “Improved crystalline quality of Al-rich n-AlGaN by regrowth on nanoporous template fabricated by electrochemical etching,” J. Nanophotonics 12(04), 1 (2018).
[Crossref]

L. Zhang, F. Xu, J. Wang, C. He, W. Guo, M. Wang, B. Sheng, L. Lu, Z. Qin, X. Wang, and B. Shen, “High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography,” Sci. Rep. 6(1), 35934 (2016).
[Crossref] [PubMed]

C. He, Z. Qin, F. Xu, M. Hou, S. Zhang, L. Zhang, X. Wang, W. Ge, and B. Shen, “Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers,” Sci. Rep. 5(1), 13046 (2015).
[Crossref] [PubMed]

Zhang, S.

S. Zhang, Y. Zhang, X. Chen, Y. Guo, J. Yan, J. Wang, and J. Li, “The effect of AlN/AlGaN superlattices on crystal and optical properties of AlGaN epitaxial layers,” Journal of Semiconductors 38(11), 112002 (2017).
[Crossref]

C. He, Z. Qin, F. Xu, M. Hou, S. Zhang, L. Zhang, X. Wang, W. Ge, and B. Shen, “Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers,” Sci. Rep. 5(1), 13046 (2015).
[Crossref] [PubMed]

Zhang, Y.

Y. Guo, J. Yan, Y. Zhang, J. Wang, and J. Li, “Enhancing the light extraction of AlGaN-based ultraviolet light-emitting diodes in the nanoscale,” J. Nanophotonics 12(04), 1 (2018).
[Crossref]

L. Zhang, J. Yan, Q. Wu, Y. Guo, C. Yang, T. Wei, Z. Liu, G. Yuan, X. Wei, L. Zhao, Y. Zhang, J. Li, and J. Wang, “Improved crystalline quality of Al-rich n-AlGaN by regrowth on nanoporous template fabricated by electrochemical etching,” J. Nanophotonics 12(04), 1 (2018).
[Crossref]

S. Zhang, Y. Zhang, X. Chen, Y. Guo, J. Yan, J. Wang, and J. Li, “The effect of AlN/AlGaN superlattices on crystal and optical properties of AlGaN epitaxial layers,” Journal of Semiconductors 38(11), 112002 (2017).
[Crossref]

Y. Guo, Y. Zhang, J. Yan, H. Xie, L. Liu, X. Chen, M. Hou, Z. Qin, J. Wang, and J. Li, “Light extraction enhancement of AlGaN-based ultraviolet light-emitting diodes by substrate sidewall roughening,” Appl. Phys. Lett. 111(1), 011102 (2017).
[Crossref] [PubMed]

Z. H. Zhang, L. Li, Y. Zhang, F. Xu, Q. Shi, B. Shen, and W. Bi, “On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes,” Opt. Express 25(14), 16550–16559 (2017).
[Crossref] [PubMed]

Y. Tian, J. Yan, Y. Zhang, X. Chen, Y. Guo, P. Cong, L. Sun, Q. Wang, E. Guo, X. Wei, J. Wang, and J. Li, “Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser,” Opt. Express 23(9), 11334–11340 (2015).
[Crossref] [PubMed]

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

P. Dong, J. Yan, Y. Zhang, J. Wang, C. Geng, H. Zheng, X. Wei, Q. Yan, and J. Li, “Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes,” Opt. Express 22(S2Suppl 2), A320–A327 (2014).
[Crossref]

A. Zhen, P. Ma, Y. Zhang, E. Guo, Y. Tian, B. Liu, S. Guo, L. Shan, J. Wang, and J. Li, “Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode,” Appl. Phys. Lett. 105(25), 251103 (2014).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
[Crossref]

C. D. Yerino, Y. Zhang, B. Leung, M. L. Lee, T.-C. Hsu, C.-K. Wang, W.-C. Peng, and J. Han, “Shape transformation of nanoporous GaN by annealing: From buried cavities to nanomembranes,” Appl. Phys. Lett. 98(25), 251910 (2011).
[Crossref]

Zhang, Z. H.

Zhao, C.

B. Janjua, H. Sun, C. Zhao, D. H. Anjum, D. Priante, A. A. Alhamoud, F. Wu, X. Li, A. M. Albadri, A. Y. Alyamani, M. M. El-Desouki, T. K. Ng, and B. S. Ooi, “Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates,” Opt. Express 25(2), 1381–1390 (2017).
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M. S. Alias, B. Janjua, C. Zhao, D. Priante, A. A. Alhamoud, M. Tangi, L. M. Alanazi, A. A. Alatawi, A. M. Albadri, A. Y. Alyamani, T. K. Ng, and B. S. Ooi, “Enhancing the Light-Extraction Efficiency of an AlGaN Nanowire Ultraviolet Light-Emitting Diode by Using Nitride/Air Distributed Bragg Reflector Nanogratings,” IEEE Photonics J. 9(5), 1–8 (2017).
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Zhao, L.

L. Zhang, J. Yan, Q. Wu, Y. Guo, C. Yang, T. Wei, Z. Liu, G. Yuan, X. Wei, L. Zhao, Y. Zhang, J. Li, and J. Wang, “Improved crystalline quality of Al-rich n-AlGaN by regrowth on nanoporous template fabricated by electrochemical etching,” J. Nanophotonics 12(04), 1 (2018).
[Crossref]

P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, Q. Yan, C. He, Z. Qin, and J. Li, “AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency,” J. Cryst. Growth 395, 9–13 (2014).
[Crossref]

Zhao, S.

S. Zhao, M. Djavid, and Z. Mi, “Surface emitting, high efficiency near-vacuum ultraviolet light source with aluminum nitride nanowires monolithically grown on silicon,” Nano Lett. 15(10), 7006–7009 (2015).
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Zhe, L.

L. Jinmin, L. Zhe, L. Zhiqiang, Y. Jianchang, W. Tongbo, Y. Xiaoyan, and W. Junxi, “Advances and prospects in nitrides based light-emitting-diodes,” Journal of Semiconductors 37(6), 061001 (2016).
[Crossref]

Zhen, A.

A. Zhen, P. Ma, Y. Zhang, E. Guo, Y. Tian, B. Liu, S. Guo, L. Shan, J. Wang, and J. Li, “Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode,” Appl. Phys. Lett. 105(25), 251103 (2014).
[Crossref]

Zheng, H.

Zhiqiang, L.

L. Jinmin, L. Zhe, L. Zhiqiang, Y. Jianchang, W. Tongbo, Y. Xiaoyan, and W. Junxi, “Advances and prospects in nitrides based light-emitting-diodes,” Journal of Semiconductors 37(6), 061001 (2016).
[Crossref]

Zhou, L.

J. Zhang, Y. Gao, L. Zhou, Y.-U. Gil, and K.-M. Kim, “Surface hole gas enabled transparent deep ultraviolet light-emitting diode,” Semicond. Sci. Technol. 33(7), 07LT01 (2018).
[Crossref]

ACS Appl. Mater. Interfaces (1)

T. H. Lee, B. R. Lee, K. R. Son, H. W. Shin, and T. G. Kim, “Highly Efficient Deep-UV Light-Emitting Diodes Using AlN-Based Deep-UV-Transparent Glass Electrodes,” ACS Appl. Mater. Interfaces 9(50), 43774–43781 (2017).
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Adv. Opt. Photonics (1)

D. Li, K. Jiang, X. Sun, and C. Guo, “AlGaN photonics: recent advances in materials and ultraviolet devices,” Adv. Opt. Photonics 10(1), 43 (2018).
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Appl. Phys. Express (2)

T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10(3), 031002 (2017).
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G.-J. Wang, B.-S. Hong, Y.-Y. Chen, Z.-J. Yang, T.-L. Tsai, Y.-S. Lin, and C.-F. Lin, “GaN/AlGaN ultraviolet light-emitting diode with an embedded porous-AlGaN distributed Bragg reflector,” Appl. Phys. Express 10(12), 122102 (2017).
[Crossref]

Appl. Phys. Lett. (9)

R. S. Q. Fareed, V. Adivarahan, C. Q. Chen, S. Rai, E. Kuokstis, J. W. Yang, M. A. Khan, J. Caissie, and R. J. Molnar, “Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN,” Appl. Phys. Lett. 84(5), 696–698 (2004).
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H. Hartono, C. B. Soh, S. Y. Chow, S. J. Chua, and E. A. Fitzgerald, “Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template,” Appl. Phys. Lett. 90(17), 171917 (2007).
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C. D. Yerino, Y. Zhang, B. Leung, M. L. Lee, T.-C. Hsu, C.-K. Wang, W.-C. Peng, and J. Han, “Shape transformation of nanoporous GaN by annealing: From buried cavities to nanomembranes,” Appl. Phys. Lett. 98(25), 251910 (2011).
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P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, and Z. Qin, “282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates,” Appl. Phys. Lett. 102(24), 241113 (2013).
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L. Zhang, J. Yan, Q. Wu, Y. Guo, C. Yang, T. Wei, Z. Liu, G. Yuan, X. Wei, L. Zhao, Y. Zhang, J. Li, and J. Wang, “Improved crystalline quality of Al-rich n-AlGaN by regrowth on nanoporous template fabricated by electrochemical etching,” J. Nanophotonics 12(04), 1 (2018).
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J. Phys. D Appl. Phys. (1)

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Figures (8)

Fig. 1
Fig. 1 (a) The schematic epitaxial structure of AGT. (b)Top-view and (c) cross-sectional SEM images of NPT.
Fig. 2
Fig. 2 (a) Cross-sectional SEM image of regrown n-AlGaN on NPT. AFM images for regrowth of n-AlGaN on (b) AGT and (c) NPT.
Fig. 3
Fig. 3 The XRCs of (002) (a) and (102) (b) diffractions for the regrown n-AlGaN on NPT and AGT.
Fig. 4
Fig. 4 Raman spectra for the regrowth AlGaN on NPT and AGT.
Fig. 5
Fig. 5 Temperature-dependent PL spectra for DUV LEDs based on AGT (a) and NPT (b) and their Arrhenius plot of integrated PL spectra (c).
Fig. 6
Fig. 6 The EL spectra (a), I-V characteristics (b) plotted in linear and semilogarithmic scale, relative LOPs and EQEs (c), angle-resolved EL spectra (d) of the DUV LEDs on NPT and AGT.
Fig. 7
Fig. 7 The EL spectra of TE and TM polarized light emitted from DUV LED based on (a) AGT and (b) NPT at 80 mA, respectively. And their DOP as a function of injection current (c).
Fig. 8
Fig. 8 FDTD simulation of light propagation at 7 fs intervals in DUV LEDs on NPT [TE (a)-(c), TM (g)-(i)] and AGT [TE (d)-(f), TM (j)-(l)].

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