Abstract

Temperature-dependent ultraviolet (UV) Raman scattering from AlGaN/GaN heterostructure is investigated. Compared to the visible Raman spectrum, four new peaks at 600, 700, 780, and 840 cm−1 are observed in the UV Raman spectrum. The peak at 780 cm−1 is from the AlGaN A1(LO) mode. According to the calculated dispersion relations of the interface phonon modes in the AlGaN/GaN heterostructure, the peaks at 600 and 840 cm−1 correspond to interface phonon modes. Meanwhile, the peak at 700 cm−1 is attributed to the disorder-active mode near the 2DEG interface. Due to the near-resonant enhancement effect, the intensities of the GaN A1(LO) mode, interface phonon modes, disorder active mode and the AlGaN A1(LO) mode exhibit different temperature dependence. Furthermore, the frequencies of the interface phonon modes and the disorder active mode show anomalous temperature dependence, which can be attributed to the strong built-in electric field near the 2DEG interface.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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    [Crossref]
  2. J. W. Chung, W. E. Hoke, E. M. Chumbes, and T. Palacios, “AlGaN/GaN HEMT With 300-GHz fmax,” IEEE Electron Device Lett. 31(3), 195–197 (2010).
    [Crossref]
  3. S. Bouzid-Driad, H. Maher, N. Defrance, V. Hoel, J.-C. De Jaeger, M. Renvoise, and P. Frijlink, “AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz FMAX,” IEEE Electron Device Lett. 34(1), 36–38 (2013).
    [Crossref]
  4. R. C. Fitch, D. E. Walker, A. J. Green, S. E. Tetlak, J. K. Gillespie, R. D. Gilbert, K. A. Sutherlin, W. D. Gouty, J. P. Theimer, G. D. Via, K. D. Chabak, and G. H. Jessen, “Implementation of high-power-density x-band AlGaN/GaN high electron mobility transistors in a millimeter-wave monolithic microwave integrated circuit process,” IEEE Electron Device Lett. 36(10), 1004–1007 (2015).
    [Crossref]
  5. W. Shaobing, G. Jianfeng, W. Weibo, and Z. Junyun, “W-Band MMIC PA with ultrahigh power density in 100-nm AlGaN/GaN technology,” IEEE Trans. Electron Dev. 63(10), 3882–3886 (2016).
    [Crossref]
  6. G. Meneghesso, G. Verzellesi, F. Danesin, F. Rampazzo, F. Zanon, A. Tazzoli, M. Meneghini, and E. Zanoni, “Reliability of GaN high-electron-mobility transistors: state of the art and perspectives,” IEEE Trans. Device Mater. Reliab. 8(2), 332–343 (2008).
    [Crossref]
  7. M. Meneghini, A. Stocco, M. Bertin, D. Marcon, A. Chini, G. Meneghesso, and E. Zanoni, “Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias,” Appl. Phys. Lett. 100(3), 033505 (2012).
    [Crossref]
  8. Y. Wu, C.-Y. Chen, and J. A. del Alamo, “Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature direct current stress,” J. Appl. Phys. 117(2), 025707 (2015).
    [Crossref]
  9. D. Bisi, A. Chini, F. Soci, A. Stocco, M. Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, P. Gamarra, C. Lacam, M. Tordjman, M.-A. di-Forte-Poisson, G. Meneghesso, and E. Zanoni, “Hot-electron degradation of AlGaN/GaN high-electron mobility transistors during RF operation: correlation with GaN buffer design,” IEEE Electron Device Lett. 36(10), 1011–1014 (2015).
    [Crossref]
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    [Crossref]
  11. V. Sodan, D. Kosemura, S. Stoffels, H. Oprins, M. Baelmans, S. Decoutere, and I. De Wolf, “Experimental Benchmarking of Electrical Methods and μ-Raman Spectroscopy for Channel Temperature Detection in AlGaN/GaN HEMTs,” IEEE Trans. Electron Dev. 63(6), 2321–2327 (2016).
    [Crossref]
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    [Crossref]
  13. F. Jabli, M. A. Zaidi, M. Gassoumi, H. Mosbahi, M. Charfeddine, T. Alharbi, and H. Maaref, “Optical Analysis of Biaxial Stress Distribution in Al0.26Ga0.74N/GaN/Si HEMT’s,” J. Alloys Compd. 650, 533–536 (2015).
    [Crossref]
  14. T. Batten, J. W. Pomeroy, M. J. Uren, T. Martin, and M. Kuball, “Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy,” J. Appl. Phys. 106(9), 094509 (2009).
    [Crossref]
  15. M. Kuball, “Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control,” Surf. Interface Anal. 31(10), 987–999 (2001).
    [Crossref]
  16. V. K. Lin, S. Dolmanan, S. L. Teo, H. H. Kim, E. Alarconllado, A. Dadgar, A. Krost, and S. Tripathy, “AlGaN/GaN heterostructures on a thin silicon-on-insulator substrate for metal-semiconductor-metal photodetectors,” J. Phys. D Appl. Phys. 44(36), 365102 (2011).
    [Crossref]
  17. J. T. Lü and J. C. Cao, “Interface and confined optical-phonon modes in wurtzite multi-interface heterostructures,” J. Appl. Phys. 97(3), 033502 (2005).
    [Crossref]
  18. C. Kranert, R. Schmidt-Grund, and M. Grundmann, “Surface- and point-defect-related Raman scattering in wurtzite semiconductors excited above the band gap,” New J. Phys. 15(11), 113048 (2013).
    [Crossref]
  19. V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
    [Crossref]
  20. F. W. Yan, H. Y. Gao, H. X. Zhang, G. H. Wang, F. H. Yang, J. C. Yan, J. X. Wang, Y. P. Zeng, and J. M. Li, “Temperature dependence of the Raman-active modes in the nonpolar a-plane GaN film,” J. Appl. Phys. 101(2), 023506 (2007).
    [Crossref]
  21. X. Q. Wang, “The influence of temperature on the average number of optical phonons in a polar slab of semiconductors,” Quantum Inform. Process. 16(3), 57 (2017).
    [Crossref]
  22. M. S. Liu, L. A. Bursill, S. Prawer, K. W. Nugent, Y. Z. Tong, and G. Y. Zhang, “Temperature dependence of Raman scattering in single crystal GaN films,” Appl. Phys. Lett. 74(21), 3125–3127 (1999).
    [Crossref]
  23. D. J. Chen, B. Shen, X. L. Wu, J. C. Shen, F. J. Xu, K. X. Zhang, R. Zhang, R. L. Jiang, Y. Shi, and Y. D. Zheng, “Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure,” Appl. Phys., A Mater. Sci. Process. 80(8), 1729–1731 (2005).
    [Crossref]
  24. K. R. Bagnall, C. E. Dreyer, D. Vanderbilt, and E. N. Wang, “Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors,” J. Appl. Phys. 120(15), 155104 (2016).
    [Crossref]

2017 (1)

X. Q. Wang, “The influence of temperature on the average number of optical phonons in a polar slab of semiconductors,” Quantum Inform. Process. 16(3), 57 (2017).
[Crossref]

2016 (3)

K. R. Bagnall, C. E. Dreyer, D. Vanderbilt, and E. N. Wang, “Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors,” J. Appl. Phys. 120(15), 155104 (2016).
[Crossref]

W. Shaobing, G. Jianfeng, W. Weibo, and Z. Junyun, “W-Band MMIC PA with ultrahigh power density in 100-nm AlGaN/GaN technology,” IEEE Trans. Electron Dev. 63(10), 3882–3886 (2016).
[Crossref]

V. Sodan, D. Kosemura, S. Stoffels, H. Oprins, M. Baelmans, S. Decoutere, and I. De Wolf, “Experimental Benchmarking of Electrical Methods and μ-Raman Spectroscopy for Channel Temperature Detection in AlGaN/GaN HEMTs,” IEEE Trans. Electron Dev. 63(6), 2321–2327 (2016).
[Crossref]

2015 (4)

F. Jabli, M. A. Zaidi, M. Gassoumi, H. Mosbahi, M. Charfeddine, T. Alharbi, and H. Maaref, “Optical Analysis of Biaxial Stress Distribution in Al0.26Ga0.74N/GaN/Si HEMT’s,” J. Alloys Compd. 650, 533–536 (2015).
[Crossref]

Y. Wu, C.-Y. Chen, and J. A. del Alamo, “Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature direct current stress,” J. Appl. Phys. 117(2), 025707 (2015).
[Crossref]

D. Bisi, A. Chini, F. Soci, A. Stocco, M. Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, P. Gamarra, C. Lacam, M. Tordjman, M.-A. di-Forte-Poisson, G. Meneghesso, and E. Zanoni, “Hot-electron degradation of AlGaN/GaN high-electron mobility transistors during RF operation: correlation with GaN buffer design,” IEEE Electron Device Lett. 36(10), 1011–1014 (2015).
[Crossref]

R. C. Fitch, D. E. Walker, A. J. Green, S. E. Tetlak, J. K. Gillespie, R. D. Gilbert, K. A. Sutherlin, W. D. Gouty, J. P. Theimer, G. D. Via, K. D. Chabak, and G. H. Jessen, “Implementation of high-power-density x-band AlGaN/GaN high electron mobility transistors in a millimeter-wave monolithic microwave integrated circuit process,” IEEE Electron Device Lett. 36(10), 1004–1007 (2015).
[Crossref]

2013 (4)

S. Bouzid-Driad, H. Maher, N. Defrance, V. Hoel, J.-C. De Jaeger, M. Renvoise, and P. Frijlink, “AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz FMAX,” IEEE Electron Device Lett. 34(1), 36–38 (2013).
[Crossref]

S. Choi, E. R. Heller, D. Dorsey, R. Vetury, and S. Graham, “Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features,” IEEE Trans. Electron Dev. 60(6), 1898–1904 (2013).
[Crossref]

S. Choi, E. Heller, D. Dorsey, R. Vetury, and S. Graham, “Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors,” J. Appl. Phys. 113(9), 093510 (2013).
[Crossref]

C. Kranert, R. Schmidt-Grund, and M. Grundmann, “Surface- and point-defect-related Raman scattering in wurtzite semiconductors excited above the band gap,” New J. Phys. 15(11), 113048 (2013).
[Crossref]

2012 (1)

M. Meneghini, A. Stocco, M. Bertin, D. Marcon, A. Chini, G. Meneghesso, and E. Zanoni, “Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias,” Appl. Phys. Lett. 100(3), 033505 (2012).
[Crossref]

2011 (1)

V. K. Lin, S. Dolmanan, S. L. Teo, H. H. Kim, E. Alarconllado, A. Dadgar, A. Krost, and S. Tripathy, “AlGaN/GaN heterostructures on a thin silicon-on-insulator substrate for metal-semiconductor-metal photodetectors,” J. Phys. D Appl. Phys. 44(36), 365102 (2011).
[Crossref]

2010 (1)

J. W. Chung, W. E. Hoke, E. M. Chumbes, and T. Palacios, “AlGaN/GaN HEMT With 300-GHz fmax,” IEEE Electron Device Lett. 31(3), 195–197 (2010).
[Crossref]

2009 (1)

T. Batten, J. W. Pomeroy, M. J. Uren, T. Martin, and M. Kuball, “Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy,” J. Appl. Phys. 106(9), 094509 (2009).
[Crossref]

2008 (1)

G. Meneghesso, G. Verzellesi, F. Danesin, F. Rampazzo, F. Zanon, A. Tazzoli, M. Meneghini, and E. Zanoni, “Reliability of GaN high-electron-mobility transistors: state of the art and perspectives,” IEEE Trans. Device Mater. Reliab. 8(2), 332–343 (2008).
[Crossref]

2007 (1)

F. W. Yan, H. Y. Gao, H. X. Zhang, G. H. Wang, F. H. Yang, J. C. Yan, J. X. Wang, Y. P. Zeng, and J. M. Li, “Temperature dependence of the Raman-active modes in the nonpolar a-plane GaN film,” J. Appl. Phys. 101(2), 023506 (2007).
[Crossref]

2005 (3)

D. J. Chen, B. Shen, X. L. Wu, J. C. Shen, F. J. Xu, K. X. Zhang, R. Zhang, R. L. Jiang, Y. Shi, and Y. D. Zheng, “Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure,” Appl. Phys., A Mater. Sci. Process. 80(8), 1729–1731 (2005).
[Crossref]

T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “High-power AlGaN/GaN HEMTs for Ka-band applications,” IEEE Electron Device Lett. 26(11), 781–783 (2005).
[Crossref]

J. T. Lü and J. C. Cao, “Interface and confined optical-phonon modes in wurtzite multi-interface heterostructures,” J. Appl. Phys. 97(3), 033502 (2005).
[Crossref]

2002 (1)

V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
[Crossref]

2001 (1)

M. Kuball, “Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control,” Surf. Interface Anal. 31(10), 987–999 (2001).
[Crossref]

1999 (1)

M. S. Liu, L. A. Bursill, S. Prawer, K. W. Nugent, Y. Z. Tong, and G. Y. Zhang, “Temperature dependence of Raman scattering in single crystal GaN films,” Appl. Phys. Lett. 74(21), 3125–3127 (1999).
[Crossref]

Aderhold, J.

V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
[Crossref]

Alarconllado, E.

V. K. Lin, S. Dolmanan, S. L. Teo, H. H. Kim, E. Alarconllado, A. Dadgar, A. Krost, and S. Tripathy, “AlGaN/GaN heterostructures on a thin silicon-on-insulator substrate for metal-semiconductor-metal photodetectors,” J. Phys. D Appl. Phys. 44(36), 365102 (2011).
[Crossref]

Alharbi, T.

F. Jabli, M. A. Zaidi, M. Gassoumi, H. Mosbahi, M. Charfeddine, T. Alharbi, and H. Maaref, “Optical Analysis of Biaxial Stress Distribution in Al0.26Ga0.74N/GaN/Si HEMT’s,” J. Alloys Compd. 650, 533–536 (2015).
[Crossref]

Baelmans, M.

V. Sodan, D. Kosemura, S. Stoffels, H. Oprins, M. Baelmans, S. Decoutere, and I. De Wolf, “Experimental Benchmarking of Electrical Methods and μ-Raman Spectroscopy for Channel Temperature Detection in AlGaN/GaN HEMTs,” IEEE Trans. Electron Dev. 63(6), 2321–2327 (2016).
[Crossref]

Bagnall, K. R.

K. R. Bagnall, C. E. Dreyer, D. Vanderbilt, and E. N. Wang, “Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors,” J. Appl. Phys. 120(15), 155104 (2016).
[Crossref]

Batten, T.

T. Batten, J. W. Pomeroy, M. J. Uren, T. Martin, and M. Kuball, “Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy,” J. Appl. Phys. 106(9), 094509 (2009).
[Crossref]

Bertin, M.

M. Meneghini, A. Stocco, M. Bertin, D. Marcon, A. Chini, G. Meneghesso, and E. Zanoni, “Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias,” Appl. Phys. Lett. 100(3), 033505 (2012).
[Crossref]

Bisi, D.

D. Bisi, A. Chini, F. Soci, A. Stocco, M. Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, P. Gamarra, C. Lacam, M. Tordjman, M.-A. di-Forte-Poisson, G. Meneghesso, and E. Zanoni, “Hot-electron degradation of AlGaN/GaN high-electron mobility transistors during RF operation: correlation with GaN buffer design,” IEEE Electron Device Lett. 36(10), 1011–1014 (2015).
[Crossref]

Bouzid-Driad, S.

S. Bouzid-Driad, H. Maher, N. Defrance, V. Hoel, J.-C. De Jaeger, M. Renvoise, and P. Frijlink, “AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz FMAX,” IEEE Electron Device Lett. 34(1), 36–38 (2013).
[Crossref]

Bursill, L. A.

M. S. Liu, L. A. Bursill, S. Prawer, K. W. Nugent, Y. Z. Tong, and G. Y. Zhang, “Temperature dependence of Raman scattering in single crystal GaN films,” Appl. Phys. Lett. 74(21), 3125–3127 (1999).
[Crossref]

Cao, J. C.

J. T. Lü and J. C. Cao, “Interface and confined optical-phonon modes in wurtzite multi-interface heterostructures,” J. Appl. Phys. 97(3), 033502 (2005).
[Crossref]

Chabak, K. D.

R. C. Fitch, D. E. Walker, A. J. Green, S. E. Tetlak, J. K. Gillespie, R. D. Gilbert, K. A. Sutherlin, W. D. Gouty, J. P. Theimer, G. D. Via, K. D. Chabak, and G. H. Jessen, “Implementation of high-power-density x-band AlGaN/GaN high electron mobility transistors in a millimeter-wave monolithic microwave integrated circuit process,” IEEE Electron Device Lett. 36(10), 1004–1007 (2015).
[Crossref]

Chakraborty, A.

T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “High-power AlGaN/GaN HEMTs for Ka-band applications,” IEEE Electron Device Lett. 26(11), 781–783 (2005).
[Crossref]

Charfeddine, M.

F. Jabli, M. A. Zaidi, M. Gassoumi, H. Mosbahi, M. Charfeddine, T. Alharbi, and H. Maaref, “Optical Analysis of Biaxial Stress Distribution in Al0.26Ga0.74N/GaN/Si HEMT’s,” J. Alloys Compd. 650, 533–536 (2015).
[Crossref]

Chen, C.-Y.

Y. Wu, C.-Y. Chen, and J. A. del Alamo, “Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature direct current stress,” J. Appl. Phys. 117(2), 025707 (2015).
[Crossref]

Chen, D. J.

D. J. Chen, B. Shen, X. L. Wu, J. C. Shen, F. J. Xu, K. X. Zhang, R. Zhang, R. L. Jiang, Y. Shi, and Y. D. Zheng, “Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure,” Appl. Phys., A Mater. Sci. Process. 80(8), 1729–1731 (2005).
[Crossref]

Chini, A.

D. Bisi, A. Chini, F. Soci, A. Stocco, M. Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, P. Gamarra, C. Lacam, M. Tordjman, M.-A. di-Forte-Poisson, G. Meneghesso, and E. Zanoni, “Hot-electron degradation of AlGaN/GaN high-electron mobility transistors during RF operation: correlation with GaN buffer design,” IEEE Electron Device Lett. 36(10), 1011–1014 (2015).
[Crossref]

M. Meneghini, A. Stocco, M. Bertin, D. Marcon, A. Chini, G. Meneghesso, and E. Zanoni, “Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias,” Appl. Phys. Lett. 100(3), 033505 (2012).
[Crossref]

Choi, S.

S. Choi, E. R. Heller, D. Dorsey, R. Vetury, and S. Graham, “Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features,” IEEE Trans. Electron Dev. 60(6), 1898–1904 (2013).
[Crossref]

S. Choi, E. Heller, D. Dorsey, R. Vetury, and S. Graham, “Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors,” J. Appl. Phys. 113(9), 093510 (2013).
[Crossref]

Chumbes, E. M.

J. W. Chung, W. E. Hoke, E. M. Chumbes, and T. Palacios, “AlGaN/GaN HEMT With 300-GHz fmax,” IEEE Electron Device Lett. 31(3), 195–197 (2010).
[Crossref]

Chung, J. W.

J. W. Chung, W. E. Hoke, E. M. Chumbes, and T. Palacios, “AlGaN/GaN HEMT With 300-GHz fmax,” IEEE Electron Device Lett. 31(3), 195–197 (2010).
[Crossref]

Dadgar, A.

V. K. Lin, S. Dolmanan, S. L. Teo, H. H. Kim, E. Alarconllado, A. Dadgar, A. Krost, and S. Tripathy, “AlGaN/GaN heterostructures on a thin silicon-on-insulator substrate for metal-semiconductor-metal photodetectors,” J. Phys. D Appl. Phys. 44(36), 365102 (2011).
[Crossref]

Danesin, F.

G. Meneghesso, G. Verzellesi, F. Danesin, F. Rampazzo, F. Zanon, A. Tazzoli, M. Meneghini, and E. Zanoni, “Reliability of GaN high-electron-mobility transistors: state of the art and perspectives,” IEEE Trans. Device Mater. Reliab. 8(2), 332–343 (2008).
[Crossref]

Davydov, V. Y.

V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
[Crossref]

De Jaeger, J.-C.

S. Bouzid-Driad, H. Maher, N. Defrance, V. Hoel, J.-C. De Jaeger, M. Renvoise, and P. Frijlink, “AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz FMAX,” IEEE Electron Device Lett. 34(1), 36–38 (2013).
[Crossref]

De Wolf, I.

V. Sodan, D. Kosemura, S. Stoffels, H. Oprins, M. Baelmans, S. Decoutere, and I. De Wolf, “Experimental Benchmarking of Electrical Methods and μ-Raman Spectroscopy for Channel Temperature Detection in AlGaN/GaN HEMTs,” IEEE Trans. Electron Dev. 63(6), 2321–2327 (2016).
[Crossref]

Decoutere, S.

V. Sodan, D. Kosemura, S. Stoffels, H. Oprins, M. Baelmans, S. Decoutere, and I. De Wolf, “Experimental Benchmarking of Electrical Methods and μ-Raman Spectroscopy for Channel Temperature Detection in AlGaN/GaN HEMTs,” IEEE Trans. Electron Dev. 63(6), 2321–2327 (2016).
[Crossref]

Defrance, N.

S. Bouzid-Driad, H. Maher, N. Defrance, V. Hoel, J.-C. De Jaeger, M. Renvoise, and P. Frijlink, “AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz FMAX,” IEEE Electron Device Lett. 34(1), 36–38 (2013).
[Crossref]

del Alamo, J. A.

Y. Wu, C.-Y. Chen, and J. A. del Alamo, “Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature direct current stress,” J. Appl. Phys. 117(2), 025707 (2015).
[Crossref]

DenBaars, S. P.

T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “High-power AlGaN/GaN HEMTs for Ka-band applications,” IEEE Electron Device Lett. 26(11), 781–783 (2005).
[Crossref]

di-Forte-Poisson, M.-A.

D. Bisi, A. Chini, F. Soci, A. Stocco, M. Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, P. Gamarra, C. Lacam, M. Tordjman, M.-A. di-Forte-Poisson, G. Meneghesso, and E. Zanoni, “Hot-electron degradation of AlGaN/GaN high-electron mobility transistors during RF operation: correlation with GaN buffer design,” IEEE Electron Device Lett. 36(10), 1011–1014 (2015).
[Crossref]

Dolmanan, S.

V. K. Lin, S. Dolmanan, S. L. Teo, H. H. Kim, E. Alarconllado, A. Dadgar, A. Krost, and S. Tripathy, “AlGaN/GaN heterostructures on a thin silicon-on-insulator substrate for metal-semiconductor-metal photodetectors,” J. Phys. D Appl. Phys. 44(36), 365102 (2011).
[Crossref]

Dorsey, D.

S. Choi, E. Heller, D. Dorsey, R. Vetury, and S. Graham, “Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors,” J. Appl. Phys. 113(9), 093510 (2013).
[Crossref]

S. Choi, E. R. Heller, D. Dorsey, R. Vetury, and S. Graham, “Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features,” IEEE Trans. Electron Dev. 60(6), 1898–1904 (2013).
[Crossref]

Dreyer, C. E.

K. R. Bagnall, C. E. Dreyer, D. Vanderbilt, and E. N. Wang, “Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors,” J. Appl. Phys. 120(15), 155104 (2016).
[Crossref]

Fitch, R. C.

R. C. Fitch, D. E. Walker, A. J. Green, S. E. Tetlak, J. K. Gillespie, R. D. Gilbert, K. A. Sutherlin, W. D. Gouty, J. P. Theimer, G. D. Via, K. D. Chabak, and G. H. Jessen, “Implementation of high-power-density x-band AlGaN/GaN high electron mobility transistors in a millimeter-wave monolithic microwave integrated circuit process,” IEEE Electron Device Lett. 36(10), 1004–1007 (2015).
[Crossref]

Frijlink, P.

S. Bouzid-Driad, H. Maher, N. Defrance, V. Hoel, J.-C. De Jaeger, M. Renvoise, and P. Frijlink, “AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz FMAX,” IEEE Electron Device Lett. 34(1), 36–38 (2013).
[Crossref]

Gamarra, P.

D. Bisi, A. Chini, F. Soci, A. Stocco, M. Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, P. Gamarra, C. Lacam, M. Tordjman, M.-A. di-Forte-Poisson, G. Meneghesso, and E. Zanoni, “Hot-electron degradation of AlGaN/GaN high-electron mobility transistors during RF operation: correlation with GaN buffer design,” IEEE Electron Device Lett. 36(10), 1011–1014 (2015).
[Crossref]

Gao, H. Y.

F. W. Yan, H. Y. Gao, H. X. Zhang, G. H. Wang, F. H. Yang, J. C. Yan, J. X. Wang, Y. P. Zeng, and J. M. Li, “Temperature dependence of the Raman-active modes in the nonpolar a-plane GaN film,” J. Appl. Phys. 101(2), 023506 (2007).
[Crossref]

Gassoumi, M.

F. Jabli, M. A. Zaidi, M. Gassoumi, H. Mosbahi, M. Charfeddine, T. Alharbi, and H. Maaref, “Optical Analysis of Biaxial Stress Distribution in Al0.26Ga0.74N/GaN/Si HEMT’s,” J. Alloys Compd. 650, 533–536 (2015).
[Crossref]

Gilbert, R. D.

R. C. Fitch, D. E. Walker, A. J. Green, S. E. Tetlak, J. K. Gillespie, R. D. Gilbert, K. A. Sutherlin, W. D. Gouty, J. P. Theimer, G. D. Via, K. D. Chabak, and G. H. Jessen, “Implementation of high-power-density x-band AlGaN/GaN high electron mobility transistors in a millimeter-wave monolithic microwave integrated circuit process,” IEEE Electron Device Lett. 36(10), 1004–1007 (2015).
[Crossref]

Gillespie, J. K.

R. C. Fitch, D. E. Walker, A. J. Green, S. E. Tetlak, J. K. Gillespie, R. D. Gilbert, K. A. Sutherlin, W. D. Gouty, J. P. Theimer, G. D. Via, K. D. Chabak, and G. H. Jessen, “Implementation of high-power-density x-band AlGaN/GaN high electron mobility transistors in a millimeter-wave monolithic microwave integrated circuit process,” IEEE Electron Device Lett. 36(10), 1004–1007 (2015).
[Crossref]

Goncharuk, I. N.

V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
[Crossref]

Gouty, W. D.

R. C. Fitch, D. E. Walker, A. J. Green, S. E. Tetlak, J. K. Gillespie, R. D. Gilbert, K. A. Sutherlin, W. D. Gouty, J. P. Theimer, G. D. Via, K. D. Chabak, and G. H. Jessen, “Implementation of high-power-density x-band AlGaN/GaN high electron mobility transistors in a millimeter-wave monolithic microwave integrated circuit process,” IEEE Electron Device Lett. 36(10), 1004–1007 (2015).
[Crossref]

Graham, S.

S. Choi, E. Heller, D. Dorsey, R. Vetury, and S. Graham, “Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors,” J. Appl. Phys. 113(9), 093510 (2013).
[Crossref]

S. Choi, E. R. Heller, D. Dorsey, R. Vetury, and S. Graham, “Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features,” IEEE Trans. Electron Dev. 60(6), 1898–1904 (2013).
[Crossref]

Graul, J.

V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
[Crossref]

Green, A. J.

R. C. Fitch, D. E. Walker, A. J. Green, S. E. Tetlak, J. K. Gillespie, R. D. Gilbert, K. A. Sutherlin, W. D. Gouty, J. P. Theimer, G. D. Via, K. D. Chabak, and G. H. Jessen, “Implementation of high-power-density x-band AlGaN/GaN high electron mobility transistors in a millimeter-wave monolithic microwave integrated circuit process,” IEEE Electron Device Lett. 36(10), 1004–1007 (2015).
[Crossref]

Grundmann, M.

C. Kranert, R. Schmidt-Grund, and M. Grundmann, “Surface- and point-defect-related Raman scattering in wurtzite semiconductors excited above the band gap,” New J. Phys. 15(11), 113048 (2013).
[Crossref]

Harima, H.

V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
[Crossref]

Heller, E.

S. Choi, E. Heller, D. Dorsey, R. Vetury, and S. Graham, “Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors,” J. Appl. Phys. 113(9), 093510 (2013).
[Crossref]

Heller, E. R.

S. Choi, E. R. Heller, D. Dorsey, R. Vetury, and S. Graham, “Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features,” IEEE Trans. Electron Dev. 60(6), 1898–1904 (2013).
[Crossref]

Hoel, V.

S. Bouzid-Driad, H. Maher, N. Defrance, V. Hoel, J.-C. De Jaeger, M. Renvoise, and P. Frijlink, “AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz FMAX,” IEEE Electron Device Lett. 34(1), 36–38 (2013).
[Crossref]

Hoke, W. E.

J. W. Chung, W. E. Hoke, E. M. Chumbes, and T. Palacios, “AlGaN/GaN HEMT With 300-GHz fmax,” IEEE Electron Device Lett. 31(3), 195–197 (2010).
[Crossref]

Jabli, F.

F. Jabli, M. A. Zaidi, M. Gassoumi, H. Mosbahi, M. Charfeddine, T. Alharbi, and H. Maaref, “Optical Analysis of Biaxial Stress Distribution in Al0.26Ga0.74N/GaN/Si HEMT’s,” J. Alloys Compd. 650, 533–536 (2015).
[Crossref]

Jessen, G. H.

R. C. Fitch, D. E. Walker, A. J. Green, S. E. Tetlak, J. K. Gillespie, R. D. Gilbert, K. A. Sutherlin, W. D. Gouty, J. P. Theimer, G. D. Via, K. D. Chabak, and G. H. Jessen, “Implementation of high-power-density x-band AlGaN/GaN high electron mobility transistors in a millimeter-wave monolithic microwave integrated circuit process,” IEEE Electron Device Lett. 36(10), 1004–1007 (2015).
[Crossref]

Jianfeng, G.

W. Shaobing, G. Jianfeng, W. Weibo, and Z. Junyun, “W-Band MMIC PA with ultrahigh power density in 100-nm AlGaN/GaN technology,” IEEE Trans. Electron Dev. 63(10), 3882–3886 (2016).
[Crossref]

Jiang, R. L.

D. J. Chen, B. Shen, X. L. Wu, J. C. Shen, F. J. Xu, K. X. Zhang, R. Zhang, R. L. Jiang, Y. Shi, and Y. D. Zheng, “Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure,” Appl. Phys., A Mater. Sci. Process. 80(8), 1729–1731 (2005).
[Crossref]

Junyun, Z.

W. Shaobing, G. Jianfeng, W. Weibo, and Z. Junyun, “W-Band MMIC PA with ultrahigh power density in 100-nm AlGaN/GaN technology,” IEEE Trans. Electron Dev. 63(10), 3882–3886 (2016).
[Crossref]

Keller, S.

T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “High-power AlGaN/GaN HEMTs for Ka-band applications,” IEEE Electron Device Lett. 26(11), 781–783 (2005).
[Crossref]

Kim, H. H.

V. K. Lin, S. Dolmanan, S. L. Teo, H. H. Kim, E. Alarconllado, A. Dadgar, A. Krost, and S. Tripathy, “AlGaN/GaN heterostructures on a thin silicon-on-insulator substrate for metal-semiconductor-metal photodetectors,” J. Phys. D Appl. Phys. 44(36), 365102 (2011).
[Crossref]

Klochikhin, A. A.

V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
[Crossref]

Kosemura, D.

V. Sodan, D. Kosemura, S. Stoffels, H. Oprins, M. Baelmans, S. Decoutere, and I. De Wolf, “Experimental Benchmarking of Electrical Methods and μ-Raman Spectroscopy for Channel Temperature Detection in AlGaN/GaN HEMTs,” IEEE Trans. Electron Dev. 63(6), 2321–2327 (2016).
[Crossref]

Kranert, C.

C. Kranert, R. Schmidt-Grund, and M. Grundmann, “Surface- and point-defect-related Raman scattering in wurtzite semiconductors excited above the band gap,” New J. Phys. 15(11), 113048 (2013).
[Crossref]

Krost, A.

V. K. Lin, S. Dolmanan, S. L. Teo, H. H. Kim, E. Alarconllado, A. Dadgar, A. Krost, and S. Tripathy, “AlGaN/GaN heterostructures on a thin silicon-on-insulator substrate for metal-semiconductor-metal photodetectors,” J. Phys. D Appl. Phys. 44(36), 365102 (2011).
[Crossref]

Kuball, M.

T. Batten, J. W. Pomeroy, M. J. Uren, T. Martin, and M. Kuball, “Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy,” J. Appl. Phys. 106(9), 094509 (2009).
[Crossref]

M. Kuball, “Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control,” Surf. Interface Anal. 31(10), 987–999 (2001).
[Crossref]

Lacam, C.

D. Bisi, A. Chini, F. Soci, A. Stocco, M. Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, P. Gamarra, C. Lacam, M. Tordjman, M.-A. di-Forte-Poisson, G. Meneghesso, and E. Zanoni, “Hot-electron degradation of AlGaN/GaN high-electron mobility transistors during RF operation: correlation with GaN buffer design,” IEEE Electron Device Lett. 36(10), 1011–1014 (2015).
[Crossref]

Lanzieri, C.

D. Bisi, A. Chini, F. Soci, A. Stocco, M. Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, P. Gamarra, C. Lacam, M. Tordjman, M.-A. di-Forte-Poisson, G. Meneghesso, and E. Zanoni, “Hot-electron degradation of AlGaN/GaN high-electron mobility transistors during RF operation: correlation with GaN buffer design,” IEEE Electron Device Lett. 36(10), 1011–1014 (2015).
[Crossref]

Li, J. M.

F. W. Yan, H. Y. Gao, H. X. Zhang, G. H. Wang, F. H. Yang, J. C. Yan, J. X. Wang, Y. P. Zeng, and J. M. Li, “Temperature dependence of the Raman-active modes in the nonpolar a-plane GaN film,” J. Appl. Phys. 101(2), 023506 (2007).
[Crossref]

Lin, V. K.

V. K. Lin, S. Dolmanan, S. L. Teo, H. H. Kim, E. Alarconllado, A. Dadgar, A. Krost, and S. Tripathy, “AlGaN/GaN heterostructures on a thin silicon-on-insulator substrate for metal-semiconductor-metal photodetectors,” J. Phys. D Appl. Phys. 44(36), 365102 (2011).
[Crossref]

Liu, M. S.

M. S. Liu, L. A. Bursill, S. Prawer, K. W. Nugent, Y. Z. Tong, and G. Y. Zhang, “Temperature dependence of Raman scattering in single crystal GaN films,” Appl. Phys. Lett. 74(21), 3125–3127 (1999).
[Crossref]

Lü, J. T.

J. T. Lü and J. C. Cao, “Interface and confined optical-phonon modes in wurtzite multi-interface heterostructures,” J. Appl. Phys. 97(3), 033502 (2005).
[Crossref]

Lundin, W. V.

V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
[Crossref]

Maaref, H.

F. Jabli, M. A. Zaidi, M. Gassoumi, H. Mosbahi, M. Charfeddine, T. Alharbi, and H. Maaref, “Optical Analysis of Biaxial Stress Distribution in Al0.26Ga0.74N/GaN/Si HEMT’s,” J. Alloys Compd. 650, 533–536 (2015).
[Crossref]

Maher, H.

S. Bouzid-Driad, H. Maher, N. Defrance, V. Hoel, J.-C. De Jaeger, M. Renvoise, and P. Frijlink, “AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz FMAX,” IEEE Electron Device Lett. 34(1), 36–38 (2013).
[Crossref]

Marcon, D.

M. Meneghini, A. Stocco, M. Bertin, D. Marcon, A. Chini, G. Meneghesso, and E. Zanoni, “Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias,” Appl. Phys. Lett. 100(3), 033505 (2012).
[Crossref]

Martin, T.

T. Batten, J. W. Pomeroy, M. J. Uren, T. Martin, and M. Kuball, “Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy,” J. Appl. Phys. 106(9), 094509 (2009).
[Crossref]

Meneghesso, G.

D. Bisi, A. Chini, F. Soci, A. Stocco, M. Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, P. Gamarra, C. Lacam, M. Tordjman, M.-A. di-Forte-Poisson, G. Meneghesso, and E. Zanoni, “Hot-electron degradation of AlGaN/GaN high-electron mobility transistors during RF operation: correlation with GaN buffer design,” IEEE Electron Device Lett. 36(10), 1011–1014 (2015).
[Crossref]

M. Meneghini, A. Stocco, M. Bertin, D. Marcon, A. Chini, G. Meneghesso, and E. Zanoni, “Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias,” Appl. Phys. Lett. 100(3), 033505 (2012).
[Crossref]

G. Meneghesso, G. Verzellesi, F. Danesin, F. Rampazzo, F. Zanon, A. Tazzoli, M. Meneghini, and E. Zanoni, “Reliability of GaN high-electron-mobility transistors: state of the art and perspectives,” IEEE Trans. Device Mater. Reliab. 8(2), 332–343 (2008).
[Crossref]

Meneghini, M.

D. Bisi, A. Chini, F. Soci, A. Stocco, M. Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, P. Gamarra, C. Lacam, M. Tordjman, M.-A. di-Forte-Poisson, G. Meneghesso, and E. Zanoni, “Hot-electron degradation of AlGaN/GaN high-electron mobility transistors during RF operation: correlation with GaN buffer design,” IEEE Electron Device Lett. 36(10), 1011–1014 (2015).
[Crossref]

M. Meneghini, A. Stocco, M. Bertin, D. Marcon, A. Chini, G. Meneghesso, and E. Zanoni, “Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias,” Appl. Phys. Lett. 100(3), 033505 (2012).
[Crossref]

G. Meneghesso, G. Verzellesi, F. Danesin, F. Rampazzo, F. Zanon, A. Tazzoli, M. Meneghini, and E. Zanoni, “Reliability of GaN high-electron-mobility transistors: state of the art and perspectives,” IEEE Trans. Device Mater. Reliab. 8(2), 332–343 (2008).
[Crossref]

Mishra, U. K.

T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “High-power AlGaN/GaN HEMTs for Ka-band applications,” IEEE Electron Device Lett. 26(11), 781–783 (2005).
[Crossref]

Mosbahi, H.

F. Jabli, M. A. Zaidi, M. Gassoumi, H. Mosbahi, M. Charfeddine, T. Alharbi, and H. Maaref, “Optical Analysis of Biaxial Stress Distribution in Al0.26Ga0.74N/GaN/Si HEMT’s,” J. Alloys Compd. 650, 533–536 (2015).
[Crossref]

Nanni, A.

D. Bisi, A. Chini, F. Soci, A. Stocco, M. Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, P. Gamarra, C. Lacam, M. Tordjman, M.-A. di-Forte-Poisson, G. Meneghesso, and E. Zanoni, “Hot-electron degradation of AlGaN/GaN high-electron mobility transistors during RF operation: correlation with GaN buffer design,” IEEE Electron Device Lett. 36(10), 1011–1014 (2015).
[Crossref]

Nikolaev, A. E.

V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
[Crossref]

Nugent, K. W.

M. S. Liu, L. A. Bursill, S. Prawer, K. W. Nugent, Y. Z. Tong, and G. Y. Zhang, “Temperature dependence of Raman scattering in single crystal GaN films,” Appl. Phys. Lett. 74(21), 3125–3127 (1999).
[Crossref]

Oprins, H.

V. Sodan, D. Kosemura, S. Stoffels, H. Oprins, M. Baelmans, S. Decoutere, and I. De Wolf, “Experimental Benchmarking of Electrical Methods and μ-Raman Spectroscopy for Channel Temperature Detection in AlGaN/GaN HEMTs,” IEEE Trans. Electron Dev. 63(6), 2321–2327 (2016).
[Crossref]

Palacios, T.

J. W. Chung, W. E. Hoke, E. M. Chumbes, and T. Palacios, “AlGaN/GaN HEMT With 300-GHz fmax,” IEEE Electron Device Lett. 31(3), 195–197 (2010).
[Crossref]

T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “High-power AlGaN/GaN HEMTs for Ka-band applications,” IEEE Electron Device Lett. 26(11), 781–783 (2005).
[Crossref]

Pantellini, A.

D. Bisi, A. Chini, F. Soci, A. Stocco, M. Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, P. Gamarra, C. Lacam, M. Tordjman, M.-A. di-Forte-Poisson, G. Meneghesso, and E. Zanoni, “Hot-electron degradation of AlGaN/GaN high-electron mobility transistors during RF operation: correlation with GaN buffer design,” IEEE Electron Device Lett. 36(10), 1011–1014 (2015).
[Crossref]

Poblenz, C.

T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “High-power AlGaN/GaN HEMTs for Ka-band applications,” IEEE Electron Device Lett. 26(11), 781–783 (2005).
[Crossref]

Pomeroy, J. W.

T. Batten, J. W. Pomeroy, M. J. Uren, T. Martin, and M. Kuball, “Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy,” J. Appl. Phys. 106(9), 094509 (2009).
[Crossref]

Prawer, S.

M. S. Liu, L. A. Bursill, S. Prawer, K. W. Nugent, Y. Z. Tong, and G. Y. Zhang, “Temperature dependence of Raman scattering in single crystal GaN films,” Appl. Phys. Lett. 74(21), 3125–3127 (1999).
[Crossref]

Rajan, S.

T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “High-power AlGaN/GaN HEMTs for Ka-band applications,” IEEE Electron Device Lett. 26(11), 781–783 (2005).
[Crossref]

Rampazzo, F.

G. Meneghesso, G. Verzellesi, F. Danesin, F. Rampazzo, F. Zanon, A. Tazzoli, M. Meneghini, and E. Zanoni, “Reliability of GaN high-electron-mobility transistors: state of the art and perspectives,” IEEE Trans. Device Mater. Reliab. 8(2), 332–343 (2008).
[Crossref]

Renvoise, M.

S. Bouzid-Driad, H. Maher, N. Defrance, V. Hoel, J.-C. De Jaeger, M. Renvoise, and P. Frijlink, “AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz FMAX,” IEEE Electron Device Lett. 34(1), 36–38 (2013).
[Crossref]

Schmidt-Grund, R.

C. Kranert, R. Schmidt-Grund, and M. Grundmann, “Surface- and point-defect-related Raman scattering in wurtzite semiconductors excited above the band gap,” New J. Phys. 15(11), 113048 (2013).
[Crossref]

Semchinova, O.

V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
[Crossref]

Shaobing, W.

W. Shaobing, G. Jianfeng, W. Weibo, and Z. Junyun, “W-Band MMIC PA with ultrahigh power density in 100-nm AlGaN/GaN technology,” IEEE Trans. Electron Dev. 63(10), 3882–3886 (2016).
[Crossref]

Shen, B.

D. J. Chen, B. Shen, X. L. Wu, J. C. Shen, F. J. Xu, K. X. Zhang, R. Zhang, R. L. Jiang, Y. Shi, and Y. D. Zheng, “Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure,” Appl. Phys., A Mater. Sci. Process. 80(8), 1729–1731 (2005).
[Crossref]

Shen, J. C.

D. J. Chen, B. Shen, X. L. Wu, J. C. Shen, F. J. Xu, K. X. Zhang, R. Zhang, R. L. Jiang, Y. Shi, and Y. D. Zheng, “Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure,” Appl. Phys., A Mater. Sci. Process. 80(8), 1729–1731 (2005).
[Crossref]

Shi, Y.

D. J. Chen, B. Shen, X. L. Wu, J. C. Shen, F. J. Xu, K. X. Zhang, R. Zhang, R. L. Jiang, Y. Shi, and Y. D. Zheng, “Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure,” Appl. Phys., A Mater. Sci. Process. 80(8), 1729–1731 (2005).
[Crossref]

Smirnov, A. N.

V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
[Crossref]

Soci, F.

D. Bisi, A. Chini, F. Soci, A. Stocco, M. Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, P. Gamarra, C. Lacam, M. Tordjman, M.-A. di-Forte-Poisson, G. Meneghesso, and E. Zanoni, “Hot-electron degradation of AlGaN/GaN high-electron mobility transistors during RF operation: correlation with GaN buffer design,” IEEE Electron Device Lett. 36(10), 1011–1014 (2015).
[Crossref]

Sodan, V.

V. Sodan, D. Kosemura, S. Stoffels, H. Oprins, M. Baelmans, S. Decoutere, and I. De Wolf, “Experimental Benchmarking of Electrical Methods and μ-Raman Spectroscopy for Channel Temperature Detection in AlGaN/GaN HEMTs,” IEEE Trans. Electron Dev. 63(6), 2321–2327 (2016).
[Crossref]

Speck, J. S.

T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “High-power AlGaN/GaN HEMTs for Ka-band applications,” IEEE Electron Device Lett. 26(11), 781–783 (2005).
[Crossref]

Stocco, A.

D. Bisi, A. Chini, F. Soci, A. Stocco, M. Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, P. Gamarra, C. Lacam, M. Tordjman, M.-A. di-Forte-Poisson, G. Meneghesso, and E. Zanoni, “Hot-electron degradation of AlGaN/GaN high-electron mobility transistors during RF operation: correlation with GaN buffer design,” IEEE Electron Device Lett. 36(10), 1011–1014 (2015).
[Crossref]

M. Meneghini, A. Stocco, M. Bertin, D. Marcon, A. Chini, G. Meneghesso, and E. Zanoni, “Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias,” Appl. Phys. Lett. 100(3), 033505 (2012).
[Crossref]

Stoffels, S.

V. Sodan, D. Kosemura, S. Stoffels, H. Oprins, M. Baelmans, S. Decoutere, and I. De Wolf, “Experimental Benchmarking of Electrical Methods and μ-Raman Spectroscopy for Channel Temperature Detection in AlGaN/GaN HEMTs,” IEEE Trans. Electron Dev. 63(6), 2321–2327 (2016).
[Crossref]

Sutherlin, K. A.

R. C. Fitch, D. E. Walker, A. J. Green, S. E. Tetlak, J. K. Gillespie, R. D. Gilbert, K. A. Sutherlin, W. D. Gouty, J. P. Theimer, G. D. Via, K. D. Chabak, and G. H. Jessen, “Implementation of high-power-density x-band AlGaN/GaN high electron mobility transistors in a millimeter-wave monolithic microwave integrated circuit process,” IEEE Electron Device Lett. 36(10), 1004–1007 (2015).
[Crossref]

Tazzoli, A.

G. Meneghesso, G. Verzellesi, F. Danesin, F. Rampazzo, F. Zanon, A. Tazzoli, M. Meneghini, and E. Zanoni, “Reliability of GaN high-electron-mobility transistors: state of the art and perspectives,” IEEE Trans. Device Mater. Reliab. 8(2), 332–343 (2008).
[Crossref]

Teo, S. L.

V. K. Lin, S. Dolmanan, S. L. Teo, H. H. Kim, E. Alarconllado, A. Dadgar, A. Krost, and S. Tripathy, “AlGaN/GaN heterostructures on a thin silicon-on-insulator substrate for metal-semiconductor-metal photodetectors,” J. Phys. D Appl. Phys. 44(36), 365102 (2011).
[Crossref]

Tetlak, S. E.

R. C. Fitch, D. E. Walker, A. J. Green, S. E. Tetlak, J. K. Gillespie, R. D. Gilbert, K. A. Sutherlin, W. D. Gouty, J. P. Theimer, G. D. Via, K. D. Chabak, and G. H. Jessen, “Implementation of high-power-density x-band AlGaN/GaN high electron mobility transistors in a millimeter-wave monolithic microwave integrated circuit process,” IEEE Electron Device Lett. 36(10), 1004–1007 (2015).
[Crossref]

Theimer, J. P.

R. C. Fitch, D. E. Walker, A. J. Green, S. E. Tetlak, J. K. Gillespie, R. D. Gilbert, K. A. Sutherlin, W. D. Gouty, J. P. Theimer, G. D. Via, K. D. Chabak, and G. H. Jessen, “Implementation of high-power-density x-band AlGaN/GaN high electron mobility transistors in a millimeter-wave monolithic microwave integrated circuit process,” IEEE Electron Device Lett. 36(10), 1004–1007 (2015).
[Crossref]

Tong, Y. Z.

M. S. Liu, L. A. Bursill, S. Prawer, K. W. Nugent, Y. Z. Tong, and G. Y. Zhang, “Temperature dependence of Raman scattering in single crystal GaN films,” Appl. Phys. Lett. 74(21), 3125–3127 (1999).
[Crossref]

Tordjman, M.

D. Bisi, A. Chini, F. Soci, A. Stocco, M. Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, P. Gamarra, C. Lacam, M. Tordjman, M.-A. di-Forte-Poisson, G. Meneghesso, and E. Zanoni, “Hot-electron degradation of AlGaN/GaN high-electron mobility transistors during RF operation: correlation with GaN buffer design,” IEEE Electron Device Lett. 36(10), 1011–1014 (2015).
[Crossref]

Tripathy, S.

V. K. Lin, S. Dolmanan, S. L. Teo, H. H. Kim, E. Alarconllado, A. Dadgar, A. Krost, and S. Tripathy, “AlGaN/GaN heterostructures on a thin silicon-on-insulator substrate for metal-semiconductor-metal photodetectors,” J. Phys. D Appl. Phys. 44(36), 365102 (2011).
[Crossref]

Uren, M. J.

T. Batten, J. W. Pomeroy, M. J. Uren, T. Martin, and M. Kuball, “Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy,” J. Appl. Phys. 106(9), 094509 (2009).
[Crossref]

Usikov, A. S.

V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
[Crossref]

Vanderbilt, D.

K. R. Bagnall, C. E. Dreyer, D. Vanderbilt, and E. N. Wang, “Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors,” J. Appl. Phys. 120(15), 155104 (2016).
[Crossref]

Verzellesi, G.

G. Meneghesso, G. Verzellesi, F. Danesin, F. Rampazzo, F. Zanon, A. Tazzoli, M. Meneghini, and E. Zanoni, “Reliability of GaN high-electron-mobility transistors: state of the art and perspectives,” IEEE Trans. Device Mater. Reliab. 8(2), 332–343 (2008).
[Crossref]

Vetury, R.

S. Choi, E. R. Heller, D. Dorsey, R. Vetury, and S. Graham, “Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features,” IEEE Trans. Electron Dev. 60(6), 1898–1904 (2013).
[Crossref]

S. Choi, E. Heller, D. Dorsey, R. Vetury, and S. Graham, “Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors,” J. Appl. Phys. 113(9), 093510 (2013).
[Crossref]

Via, G. D.

R. C. Fitch, D. E. Walker, A. J. Green, S. E. Tetlak, J. K. Gillespie, R. D. Gilbert, K. A. Sutherlin, W. D. Gouty, J. P. Theimer, G. D. Via, K. D. Chabak, and G. H. Jessen, “Implementation of high-power-density x-band AlGaN/GaN high electron mobility transistors in a millimeter-wave monolithic microwave integrated circuit process,” IEEE Electron Device Lett. 36(10), 1004–1007 (2015).
[Crossref]

Walker, D. E.

R. C. Fitch, D. E. Walker, A. J. Green, S. E. Tetlak, J. K. Gillespie, R. D. Gilbert, K. A. Sutherlin, W. D. Gouty, J. P. Theimer, G. D. Via, K. D. Chabak, and G. H. Jessen, “Implementation of high-power-density x-band AlGaN/GaN high electron mobility transistors in a millimeter-wave monolithic microwave integrated circuit process,” IEEE Electron Device Lett. 36(10), 1004–1007 (2015).
[Crossref]

Wang, E. N.

K. R. Bagnall, C. E. Dreyer, D. Vanderbilt, and E. N. Wang, “Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors,” J. Appl. Phys. 120(15), 155104 (2016).
[Crossref]

Wang, G. H.

F. W. Yan, H. Y. Gao, H. X. Zhang, G. H. Wang, F. H. Yang, J. C. Yan, J. X. Wang, Y. P. Zeng, and J. M. Li, “Temperature dependence of the Raman-active modes in the nonpolar a-plane GaN film,” J. Appl. Phys. 101(2), 023506 (2007).
[Crossref]

Wang, J. X.

F. W. Yan, H. Y. Gao, H. X. Zhang, G. H. Wang, F. H. Yang, J. C. Yan, J. X. Wang, Y. P. Zeng, and J. M. Li, “Temperature dependence of the Raman-active modes in the nonpolar a-plane GaN film,” J. Appl. Phys. 101(2), 023506 (2007).
[Crossref]

Wang, X. Q.

X. Q. Wang, “The influence of temperature on the average number of optical phonons in a polar slab of semiconductors,” Quantum Inform. Process. 16(3), 57 (2017).
[Crossref]

Weibo, W.

W. Shaobing, G. Jianfeng, W. Weibo, and Z. Junyun, “W-Band MMIC PA with ultrahigh power density in 100-nm AlGaN/GaN technology,” IEEE Trans. Electron Dev. 63(10), 3882–3886 (2016).
[Crossref]

Wu, X. L.

D. J. Chen, B. Shen, X. L. Wu, J. C. Shen, F. J. Xu, K. X. Zhang, R. Zhang, R. L. Jiang, Y. Shi, and Y. D. Zheng, “Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure,” Appl. Phys., A Mater. Sci. Process. 80(8), 1729–1731 (2005).
[Crossref]

Wu, Y.

Y. Wu, C.-Y. Chen, and J. A. del Alamo, “Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature direct current stress,” J. Appl. Phys. 117(2), 025707 (2015).
[Crossref]

Xu, F. J.

D. J. Chen, B. Shen, X. L. Wu, J. C. Shen, F. J. Xu, K. X. Zhang, R. Zhang, R. L. Jiang, Y. Shi, and Y. D. Zheng, “Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure,” Appl. Phys., A Mater. Sci. Process. 80(8), 1729–1731 (2005).
[Crossref]

Yan, F. W.

F. W. Yan, H. Y. Gao, H. X. Zhang, G. H. Wang, F. H. Yang, J. C. Yan, J. X. Wang, Y. P. Zeng, and J. M. Li, “Temperature dependence of the Raman-active modes in the nonpolar a-plane GaN film,” J. Appl. Phys. 101(2), 023506 (2007).
[Crossref]

Yan, J. C.

F. W. Yan, H. Y. Gao, H. X. Zhang, G. H. Wang, F. H. Yang, J. C. Yan, J. X. Wang, Y. P. Zeng, and J. M. Li, “Temperature dependence of the Raman-active modes in the nonpolar a-plane GaN film,” J. Appl. Phys. 101(2), 023506 (2007).
[Crossref]

Yang, F. H.

F. W. Yan, H. Y. Gao, H. X. Zhang, G. H. Wang, F. H. Yang, J. C. Yan, J. X. Wang, Y. P. Zeng, and J. M. Li, “Temperature dependence of the Raman-active modes in the nonpolar a-plane GaN film,” J. Appl. Phys. 101(2), 023506 (2007).
[Crossref]

Zaidi, M. A.

F. Jabli, M. A. Zaidi, M. Gassoumi, H. Mosbahi, M. Charfeddine, T. Alharbi, and H. Maaref, “Optical Analysis of Biaxial Stress Distribution in Al0.26Ga0.74N/GaN/Si HEMT’s,” J. Alloys Compd. 650, 533–536 (2015).
[Crossref]

Zanon, F.

G. Meneghesso, G. Verzellesi, F. Danesin, F. Rampazzo, F. Zanon, A. Tazzoli, M. Meneghini, and E. Zanoni, “Reliability of GaN high-electron-mobility transistors: state of the art and perspectives,” IEEE Trans. Device Mater. Reliab. 8(2), 332–343 (2008).
[Crossref]

Zanoni, E.

D. Bisi, A. Chini, F. Soci, A. Stocco, M. Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, P. Gamarra, C. Lacam, M. Tordjman, M.-A. di-Forte-Poisson, G. Meneghesso, and E. Zanoni, “Hot-electron degradation of AlGaN/GaN high-electron mobility transistors during RF operation: correlation with GaN buffer design,” IEEE Electron Device Lett. 36(10), 1011–1014 (2015).
[Crossref]

M. Meneghini, A. Stocco, M. Bertin, D. Marcon, A. Chini, G. Meneghesso, and E. Zanoni, “Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias,” Appl. Phys. Lett. 100(3), 033505 (2012).
[Crossref]

G. Meneghesso, G. Verzellesi, F. Danesin, F. Rampazzo, F. Zanon, A. Tazzoli, M. Meneghini, and E. Zanoni, “Reliability of GaN high-electron-mobility transistors: state of the art and perspectives,” IEEE Trans. Device Mater. Reliab. 8(2), 332–343 (2008).
[Crossref]

Zeng, Y. P.

F. W. Yan, H. Y. Gao, H. X. Zhang, G. H. Wang, F. H. Yang, J. C. Yan, J. X. Wang, Y. P. Zeng, and J. M. Li, “Temperature dependence of the Raman-active modes in the nonpolar a-plane GaN film,” J. Appl. Phys. 101(2), 023506 (2007).
[Crossref]

Zhang, G. Y.

M. S. Liu, L. A. Bursill, S. Prawer, K. W. Nugent, Y. Z. Tong, and G. Y. Zhang, “Temperature dependence of Raman scattering in single crystal GaN films,” Appl. Phys. Lett. 74(21), 3125–3127 (1999).
[Crossref]

Zhang, H. X.

F. W. Yan, H. Y. Gao, H. X. Zhang, G. H. Wang, F. H. Yang, J. C. Yan, J. X. Wang, Y. P. Zeng, and J. M. Li, “Temperature dependence of the Raman-active modes in the nonpolar a-plane GaN film,” J. Appl. Phys. 101(2), 023506 (2007).
[Crossref]

Zhang, K. X.

D. J. Chen, B. Shen, X. L. Wu, J. C. Shen, F. J. Xu, K. X. Zhang, R. Zhang, R. L. Jiang, Y. Shi, and Y. D. Zheng, “Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure,” Appl. Phys., A Mater. Sci. Process. 80(8), 1729–1731 (2005).
[Crossref]

Zhang, R.

D. J. Chen, B. Shen, X. L. Wu, J. C. Shen, F. J. Xu, K. X. Zhang, R. Zhang, R. L. Jiang, Y. Shi, and Y. D. Zheng, “Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure,” Appl. Phys., A Mater. Sci. Process. 80(8), 1729–1731 (2005).
[Crossref]

Zheng, Y. D.

D. J. Chen, B. Shen, X. L. Wu, J. C. Shen, F. J. Xu, K. X. Zhang, R. Zhang, R. L. Jiang, Y. Shi, and Y. D. Zheng, “Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure,” Appl. Phys., A Mater. Sci. Process. 80(8), 1729–1731 (2005).
[Crossref]

Appl. Phys. Lett. (2)

M. Meneghini, A. Stocco, M. Bertin, D. Marcon, A. Chini, G. Meneghesso, and E. Zanoni, “Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias,” Appl. Phys. Lett. 100(3), 033505 (2012).
[Crossref]

M. S. Liu, L. A. Bursill, S. Prawer, K. W. Nugent, Y. Z. Tong, and G. Y. Zhang, “Temperature dependence of Raman scattering in single crystal GaN films,” Appl. Phys. Lett. 74(21), 3125–3127 (1999).
[Crossref]

Appl. Phys., A Mater. Sci. Process. (1)

D. J. Chen, B. Shen, X. L. Wu, J. C. Shen, F. J. Xu, K. X. Zhang, R. Zhang, R. L. Jiang, Y. Shi, and Y. D. Zheng, “Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure,” Appl. Phys., A Mater. Sci. Process. 80(8), 1729–1731 (2005).
[Crossref]

IEEE Electron Device Lett. (5)

T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “High-power AlGaN/GaN HEMTs for Ka-band applications,” IEEE Electron Device Lett. 26(11), 781–783 (2005).
[Crossref]

J. W. Chung, W. E. Hoke, E. M. Chumbes, and T. Palacios, “AlGaN/GaN HEMT With 300-GHz fmax,” IEEE Electron Device Lett. 31(3), 195–197 (2010).
[Crossref]

S. Bouzid-Driad, H. Maher, N. Defrance, V. Hoel, J.-C. De Jaeger, M. Renvoise, and P. Frijlink, “AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz FMAX,” IEEE Electron Device Lett. 34(1), 36–38 (2013).
[Crossref]

R. C. Fitch, D. E. Walker, A. J. Green, S. E. Tetlak, J. K. Gillespie, R. D. Gilbert, K. A. Sutherlin, W. D. Gouty, J. P. Theimer, G. D. Via, K. D. Chabak, and G. H. Jessen, “Implementation of high-power-density x-band AlGaN/GaN high electron mobility transistors in a millimeter-wave monolithic microwave integrated circuit process,” IEEE Electron Device Lett. 36(10), 1004–1007 (2015).
[Crossref]

D. Bisi, A. Chini, F. Soci, A. Stocco, M. Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, P. Gamarra, C. Lacam, M. Tordjman, M.-A. di-Forte-Poisson, G. Meneghesso, and E. Zanoni, “Hot-electron degradation of AlGaN/GaN high-electron mobility transistors during RF operation: correlation with GaN buffer design,” IEEE Electron Device Lett. 36(10), 1011–1014 (2015).
[Crossref]

IEEE Trans. Device Mater. Reliab. (1)

G. Meneghesso, G. Verzellesi, F. Danesin, F. Rampazzo, F. Zanon, A. Tazzoli, M. Meneghini, and E. Zanoni, “Reliability of GaN high-electron-mobility transistors: state of the art and perspectives,” IEEE Trans. Device Mater. Reliab. 8(2), 332–343 (2008).
[Crossref]

IEEE Trans. Electron Dev. (3)

S. Choi, E. R. Heller, D. Dorsey, R. Vetury, and S. Graham, “Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features,” IEEE Trans. Electron Dev. 60(6), 1898–1904 (2013).
[Crossref]

V. Sodan, D. Kosemura, S. Stoffels, H. Oprins, M. Baelmans, S. Decoutere, and I. De Wolf, “Experimental Benchmarking of Electrical Methods and μ-Raman Spectroscopy for Channel Temperature Detection in AlGaN/GaN HEMTs,” IEEE Trans. Electron Dev. 63(6), 2321–2327 (2016).
[Crossref]

W. Shaobing, G. Jianfeng, W. Weibo, and Z. Junyun, “W-Band MMIC PA with ultrahigh power density in 100-nm AlGaN/GaN technology,” IEEE Trans. Electron Dev. 63(10), 3882–3886 (2016).
[Crossref]

J. Alloys Compd. (1)

F. Jabli, M. A. Zaidi, M. Gassoumi, H. Mosbahi, M. Charfeddine, T. Alharbi, and H. Maaref, “Optical Analysis of Biaxial Stress Distribution in Al0.26Ga0.74N/GaN/Si HEMT’s,” J. Alloys Compd. 650, 533–536 (2015).
[Crossref]

J. Appl. Phys. (6)

T. Batten, J. W. Pomeroy, M. J. Uren, T. Martin, and M. Kuball, “Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy,” J. Appl. Phys. 106(9), 094509 (2009).
[Crossref]

Y. Wu, C.-Y. Chen, and J. A. del Alamo, “Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature direct current stress,” J. Appl. Phys. 117(2), 025707 (2015).
[Crossref]

J. T. Lü and J. C. Cao, “Interface and confined optical-phonon modes in wurtzite multi-interface heterostructures,” J. Appl. Phys. 97(3), 033502 (2005).
[Crossref]

S. Choi, E. Heller, D. Dorsey, R. Vetury, and S. Graham, “Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors,” J. Appl. Phys. 113(9), 093510 (2013).
[Crossref]

K. R. Bagnall, C. E. Dreyer, D. Vanderbilt, and E. N. Wang, “Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors,” J. Appl. Phys. 120(15), 155104 (2016).
[Crossref]

F. W. Yan, H. Y. Gao, H. X. Zhang, G. H. Wang, F. H. Yang, J. C. Yan, J. X. Wang, Y. P. Zeng, and J. M. Li, “Temperature dependence of the Raman-active modes in the nonpolar a-plane GaN film,” J. Appl. Phys. 101(2), 023506 (2007).
[Crossref]

J. Phys. D Appl. Phys. (1)

V. K. Lin, S. Dolmanan, S. L. Teo, H. H. Kim, E. Alarconllado, A. Dadgar, A. Krost, and S. Tripathy, “AlGaN/GaN heterostructures on a thin silicon-on-insulator substrate for metal-semiconductor-metal photodetectors,” J. Phys. D Appl. Phys. 44(36), 365102 (2011).
[Crossref]

New J. Phys. (1)

C. Kranert, R. Schmidt-Grund, and M. Grundmann, “Surface- and point-defect-related Raman scattering in wurtzite semiconductors excited above the band gap,” New J. Phys. 15(11), 113048 (2013).
[Crossref]

Phys. Rev. B Condens. Matter Mater. Phys. (1)

V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, “Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys,” Phys. Rev. B Condens. Matter Mater. Phys. 65(12), 125203 (2002).
[Crossref]

Quantum Inform. Process. (1)

X. Q. Wang, “The influence of temperature on the average number of optical phonons in a polar slab of semiconductors,” Quantum Inform. Process. 16(3), 57 (2017).
[Crossref]

Surf. Interface Anal. (1)

M. Kuball, “Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control,” Surf. Interface Anal. 31(10), 987–999 (2001).
[Crossref]

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Figures (8)

Fig. 1
Fig. 1 HRXRD ω-2θ scan of (0002) diffraction plane of the AlGaN/GaN heterostructure. The inset shows the HRXRD rocking curves of (002) and (102) planes.
Fig. 2
Fig. 2 AFM image of the AlGaN/GaN heterostructure.
Fig. 3
Fig. 3 (a) The UV and visible Raman spectra of AlGaN/GaN heterostructure at room temperature. (b) The UV Raman spectra of AlGaN/GaN heterostructure with and without 2DEG.
Fig. 4
Fig. 4 Dispersion relations of the interface phonon modes in AlGaN/GaN heterostructrue with (a) and without taking into account vacuum (b).
Fig. 5
Fig. 5 The UV Raman spectra of AlGaN/GaN heterostructure with temperature in the range of 80-300 K (a) and 300-600 K (b), respectively.
Fig. 6
Fig. 6 Temperature dependent energy gaps of AlGaN/GaN heterostructure. The red solid line in this figure represents the excitation photon energy.
Fig. 7
Fig. 7 The distribution of the built-in electric field in the AlGaN/GaN heterostructure.
Fig. 8
Fig. 8 Unit cell of the hexagonal III-Nitride material and the relative motion of the atoms due to the veritical electric field.