Abstract

We demonstrate that a phase difference between terahertz signals coupled to the gate and source and gate and drain terminals of a field effect transistor (a TeraFET) induces a plasmon-assisted DC current, which is dramatically enhanced in the vicinity of plasmonic resonances. We describe a TeraFET operation with identical radiation amplitudes at the source and drain antennas but with a phase-shift-induced asymmetry. In this regime, the TeraFET operates as a tunable resonant polarization-sensitive plasmonic spectrometer, operating in the sub-terahertz and terahertz ranges of frequencies. We also propose an effective scheme of a phase-sensitive homodyne detector operating in this phase-asymmetry mode, which allows for a dramatic enhancement of the response. These regimes can be implemented in different materials systems, including silicon. The p-diamond TeraFETs could support operation in the 200 to 600 GHz atmospheric windows, which is especially important for beyond 5G communication systems.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Full Article  |  PDF Article
OSA Recommended Articles
Numerical study on heterodyne terahertz detection in field effect transistor

Zhifeng Yan, Jingxuan Zhu, Yinglei Wang, Xinnan Lin, Jin He, and Juncheng Cao
Opt. Express 18(8) 7782-7789 (2010)

Interferometric measurement of far infrared plasmons via resonant homodyne mixing

Gregory C. Dyer, Gregory R. Aizin, S. James Allen, Albert D. Grine, Don Bethke, John L. Reno, and Eric A. Shaner
Opt. Express 22(13) 16254-16266 (2014)

References

  • View by:
  • |
  • |
  • |

  1. M. Dyakonov and M. Shur, “Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current,” Phys. Rev. Lett. 71(15), 2465–2468 (1993).
    [Crossref] [PubMed]
  2. M. Dyakonov and M. S. Shur, “Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid,” IEEE Trans. Electron Dev. 43(3), 380–387 (1996).
    [Crossref]
  3. W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
    [Crossref]
  4. R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
    [Crossref]
  5. W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant Detection of Terahertz Radiation in Field Effect Transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
    [Crossref]
  6. F. Teppe, M. Orlov, A. El Fatimy, A. Tiberj, W. Knap, J. Torres, V. Gavrilenko, A. Shchepetov, Y. Roelens, and S. Bollaert, “Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors,” Appl. Phys. Lett. 89(22), 222109 (2006).
    [Crossref]
  7. A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342–1343 (2006).
    [Crossref]
  8. T. Otsuji, V. Popov, and V. Ryzhii, “Active graphene plasmonics for terahertz device applications,” J. Phys. D Appl. Phys. 47(9), 94006 (2014).
    [Crossref]
  9. D. Veksler, A. Muraviev, V.Yu. Kachorovskii, T. Elkhatib, K. Salama, X.-C. Zhang, and M. Shur, “Imaging of field-effect transistors by focused terahertz radiation,” Solid State Electron. 53, 571–573 (2009).
  10. C. Drexler, N. Dyakonova, P. Olbrich, J. Karch, M. Schafberger, K. Karpierz, Yu. Mityagin, M. B. Lifshits, F. Teppe, O. Klimenko, Y. M. Meziani, W. Knap, and S. D. Ganichev, “Helicity sensitive terahertz radiation detection by field effect transistors,” J. Appl. Phys. 111(12), 124504 (2012).
    [Crossref]
  11. K. S. Romanov and M. I. Dyakonov, “Theory of helicity-sensitive terahertz radiation detection by field effect transistors,” Appl. Phys. Lett. 102(15), 153502 (2013).
    [Crossref]
  12. I. V. Gorbenko, V. Yu. Kachorovskii, and M. S. Shur, “Plasmonic Helicity-Driven Detector of Terahertz Radiation,” Phys. Status Solidi Rapid Res. Lett., 1800464 (2018).
    [Crossref]
  13. G. R. Aizin, J. Mikalopas, and M. Shur, “Plasmons in ballistic nanostructures with stubs: transmission line approach” https://arxiv.org/abs/1806.00682 , (2018).
  14. S. Rumyantsev, X. Liu, V. Kachorovskii, and M. Shur, “Homodyne Phase Sensitive Terahertz Spectrometer,” Appl. Phys. Lett. 111(12), 121105 (2017).
    [Crossref]

2017 (1)

S. Rumyantsev, X. Liu, V. Kachorovskii, and M. Shur, “Homodyne Phase Sensitive Terahertz Spectrometer,” Appl. Phys. Lett. 111(12), 121105 (2017).
[Crossref]

2014 (1)

T. Otsuji, V. Popov, and V. Ryzhii, “Active graphene plasmonics for terahertz device applications,” J. Phys. D Appl. Phys. 47(9), 94006 (2014).
[Crossref]

2013 (1)

K. S. Romanov and M. I. Dyakonov, “Theory of helicity-sensitive terahertz radiation detection by field effect transistors,” Appl. Phys. Lett. 102(15), 153502 (2013).
[Crossref]

2012 (1)

C. Drexler, N. Dyakonova, P. Olbrich, J. Karch, M. Schafberger, K. Karpierz, Yu. Mityagin, M. B. Lifshits, F. Teppe, O. Klimenko, Y. M. Meziani, W. Knap, and S. D. Ganichev, “Helicity sensitive terahertz radiation detection by field effect transistors,” J. Appl. Phys. 111(12), 124504 (2012).
[Crossref]

2009 (1)

D. Veksler, A. Muraviev, V.Yu. Kachorovskii, T. Elkhatib, K. Salama, X.-C. Zhang, and M. Shur, “Imaging of field-effect transistors by focused terahertz radiation,” Solid State Electron. 53, 571–573 (2009).

2006 (3)

F. Teppe, M. Orlov, A. El Fatimy, A. Tiberj, W. Knap, J. Torres, V. Gavrilenko, A. Shchepetov, Y. Roelens, and S. Bollaert, “Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors,” Appl. Phys. Lett. 89(22), 222109 (2006).
[Crossref]

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342–1343 (2006).
[Crossref]

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[Crossref]

2004 (1)

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[Crossref]

2002 (1)

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant Detection of Terahertz Radiation in Field Effect Transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[Crossref]

1996 (1)

M. Dyakonov and M. S. Shur, “Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid,” IEEE Trans. Electron Dev. 43(3), 380–387 (1996).
[Crossref]

1993 (1)

M. Dyakonov and M. Shur, “Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current,” Phys. Rev. Lett. 71(15), 2465–2468 (1993).
[Crossref] [PubMed]

Boeuf, F.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[Crossref]

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[Crossref]

Bollaert, S.

F. Teppe, M. Orlov, A. El Fatimy, A. Tiberj, W. Knap, J. Torres, V. Gavrilenko, A. Shchepetov, Y. Roelens, and S. Bollaert, “Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors,” Appl. Phys. Lett. 89(22), 222109 (2006).
[Crossref]

Boubanga, S.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[Crossref]

Boubanga Tombet, S.

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342–1343 (2006).
[Crossref]

Brunel, L. C.

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant Detection of Terahertz Radiation in Field Effect Transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[Crossref]

Cappy, A.

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342–1343 (2006).
[Crossref]

Coquillat, D.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[Crossref]

Deng, Y.

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant Detection of Terahertz Radiation in Field Effect Transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[Crossref]

Drexler, C.

C. Drexler, N. Dyakonova, P. Olbrich, J. Karch, M. Schafberger, K. Karpierz, Yu. Mityagin, M. B. Lifshits, F. Teppe, O. Klimenko, Y. M. Meziani, W. Knap, and S. D. Ganichev, “Helicity sensitive terahertz radiation detection by field effect transistors,” J. Appl. Phys. 111(12), 124504 (2012).
[Crossref]

Dyakonov, M.

M. Dyakonov and M. S. Shur, “Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid,” IEEE Trans. Electron Dev. 43(3), 380–387 (1996).
[Crossref]

M. Dyakonov and M. Shur, “Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current,” Phys. Rev. Lett. 71(15), 2465–2468 (1993).
[Crossref] [PubMed]

Dyakonov, M. I.

K. S. Romanov and M. I. Dyakonov, “Theory of helicity-sensitive terahertz radiation detection by field effect transistors,” Appl. Phys. Lett. 102(15), 153502 (2013).
[Crossref]

Dyakonova, N.

C. Drexler, N. Dyakonova, P. Olbrich, J. Karch, M. Schafberger, K. Karpierz, Yu. Mityagin, M. B. Lifshits, F. Teppe, O. Klimenko, Y. M. Meziani, W. Knap, and S. D. Ganichev, “Helicity sensitive terahertz radiation detection by field effect transistors,” J. Appl. Phys. 111(12), 124504 (2012).
[Crossref]

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[Crossref]

El Fatimy, A.

F. Teppe, M. Orlov, A. El Fatimy, A. Tiberj, W. Knap, J. Torres, V. Gavrilenko, A. Shchepetov, Y. Roelens, and S. Bollaert, “Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors,” Appl. Phys. Lett. 89(22), 222109 (2006).
[Crossref]

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342–1343 (2006).
[Crossref]

Elkhatib, T.

D. Veksler, A. Muraviev, V.Yu. Kachorovskii, T. Elkhatib, K. Salama, X.-C. Zhang, and M. Shur, “Imaging of field-effect transistors by focused terahertz radiation,” Solid State Electron. 53, 571–573 (2009).

Fareed, Q.

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342–1343 (2006).
[Crossref]

Fenouillet-Beranger, C.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[Crossref]

Gallon, C.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[Crossref]

Ganichev, S. D.

C. Drexler, N. Dyakonova, P. Olbrich, J. Karch, M. Schafberger, K. Karpierz, Yu. Mityagin, M. B. Lifshits, F. Teppe, O. Klimenko, Y. M. Meziani, W. Knap, and S. D. Ganichev, “Helicity sensitive terahertz radiation detection by field effect transistors,” J. Appl. Phys. 111(12), 124504 (2012).
[Crossref]

Gaquiere, C.

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342–1343 (2006).
[Crossref]

Gaska, R.

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342–1343 (2006).
[Crossref]

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant Detection of Terahertz Radiation in Field Effect Transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[Crossref]

Gavrilenko, V.

F. Teppe, M. Orlov, A. El Fatimy, A. Tiberj, W. Knap, J. Torres, V. Gavrilenko, A. Shchepetov, Y. Roelens, and S. Bollaert, “Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors,” Appl. Phys. Lett. 89(22), 222109 (2006).
[Crossref]

Gorbenko, I. V.

I. V. Gorbenko, V. Yu. Kachorovskii, and M. S. Shur, “Plasmonic Helicity-Driven Detector of Terahertz Radiation,” Phys. Status Solidi Rapid Res. Lett., 1800464 (2018).
[Crossref]

Hu, X.

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342–1343 (2006).
[Crossref]

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant Detection of Terahertz Radiation in Field Effect Transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[Crossref]

Kachorovskii, V.

S. Rumyantsev, X. Liu, V. Kachorovskii, and M. Shur, “Homodyne Phase Sensitive Terahertz Spectrometer,” Appl. Phys. Lett. 111(12), 121105 (2017).
[Crossref]

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant Detection of Terahertz Radiation in Field Effect Transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[Crossref]

Kachorovskii, V. Yu.

I. V. Gorbenko, V. Yu. Kachorovskii, and M. S. Shur, “Plasmonic Helicity-Driven Detector of Terahertz Radiation,” Phys. Status Solidi Rapid Res. Lett., 1800464 (2018).
[Crossref]

Kachorovskii, V.Yu.

D. Veksler, A. Muraviev, V.Yu. Kachorovskii, T. Elkhatib, K. Salama, X.-C. Zhang, and M. Shur, “Imaging of field-effect transistors by focused terahertz radiation,” Solid State Electron. 53, 571–573 (2009).

Karch, J.

C. Drexler, N. Dyakonova, P. Olbrich, J. Karch, M. Schafberger, K. Karpierz, Yu. Mityagin, M. B. Lifshits, F. Teppe, O. Klimenko, Y. M. Meziani, W. Knap, and S. D. Ganichev, “Helicity sensitive terahertz radiation detection by field effect transistors,” J. Appl. Phys. 111(12), 124504 (2012).
[Crossref]

Karpierz, K.

C. Drexler, N. Dyakonova, P. Olbrich, J. Karch, M. Schafberger, K. Karpierz, Yu. Mityagin, M. B. Lifshits, F. Teppe, O. Klimenko, Y. M. Meziani, W. Knap, and S. D. Ganichev, “Helicity sensitive terahertz radiation detection by field effect transistors,” J. Appl. Phys. 111(12), 124504 (2012).
[Crossref]

Khan, M. A.

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant Detection of Terahertz Radiation in Field Effect Transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[Crossref]

Klimenko, O.

C. Drexler, N. Dyakonova, P. Olbrich, J. Karch, M. Schafberger, K. Karpierz, Yu. Mityagin, M. B. Lifshits, F. Teppe, O. Klimenko, Y. M. Meziani, W. Knap, and S. D. Ganichev, “Helicity sensitive terahertz radiation detection by field effect transistors,” J. Appl. Phys. 111(12), 124504 (2012).
[Crossref]

Knap, W.

C. Drexler, N. Dyakonova, P. Olbrich, J. Karch, M. Schafberger, K. Karpierz, Yu. Mityagin, M. B. Lifshits, F. Teppe, O. Klimenko, Y. M. Meziani, W. Knap, and S. D. Ganichev, “Helicity sensitive terahertz radiation detection by field effect transistors,” J. Appl. Phys. 111(12), 124504 (2012).
[Crossref]

F. Teppe, M. Orlov, A. El Fatimy, A. Tiberj, W. Knap, J. Torres, V. Gavrilenko, A. Shchepetov, Y. Roelens, and S. Bollaert, “Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors,” Appl. Phys. Lett. 89(22), 222109 (2006).
[Crossref]

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342–1343 (2006).
[Crossref]

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[Crossref]

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[Crossref]

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant Detection of Terahertz Radiation in Field Effect Transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[Crossref]

Lifshits, M. B.

C. Drexler, N. Dyakonova, P. Olbrich, J. Karch, M. Schafberger, K. Karpierz, Yu. Mityagin, M. B. Lifshits, F. Teppe, O. Klimenko, Y. M. Meziani, W. Knap, and S. D. Ganichev, “Helicity sensitive terahertz radiation detection by field effect transistors,” J. Appl. Phys. 111(12), 124504 (2012).
[Crossref]

Liu, X.

S. Rumyantsev, X. Liu, V. Kachorovskii, and M. Shur, “Homodyne Phase Sensitive Terahertz Spectrometer,” Appl. Phys. Lett. 111(12), 121105 (2017).
[Crossref]

Lu, J. Q.

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant Detection of Terahertz Radiation in Field Effect Transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[Crossref]

Lusakowski, J.

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[Crossref]

Maude, D.

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[Crossref]

Maude, D. K.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[Crossref]

Meziani, Y.

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[Crossref]

Meziani, Y. M.

C. Drexler, N. Dyakonova, P. Olbrich, J. Karch, M. Schafberger, K. Karpierz, Yu. Mityagin, M. B. Lifshits, F. Teppe, O. Klimenko, Y. M. Meziani, W. Knap, and S. D. Ganichev, “Helicity sensitive terahertz radiation detection by field effect transistors,” J. Appl. Phys. 111(12), 124504 (2012).
[Crossref]

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[Crossref]

Mityagin, Yu.

C. Drexler, N. Dyakonova, P. Olbrich, J. Karch, M. Schafberger, K. Karpierz, Yu. Mityagin, M. B. Lifshits, F. Teppe, O. Klimenko, Y. M. Meziani, W. Knap, and S. D. Ganichev, “Helicity sensitive terahertz radiation detection by field effect transistors,” J. Appl. Phys. 111(12), 124504 (2012).
[Crossref]

Muraviev, A.

D. Veksler, A. Muraviev, V.Yu. Kachorovskii, T. Elkhatib, K. Salama, X.-C. Zhang, and M. Shur, “Imaging of field-effect transistors by focused terahertz radiation,” Solid State Electron. 53, 571–573 (2009).

Olbrich, P.

C. Drexler, N. Dyakonova, P. Olbrich, J. Karch, M. Schafberger, K. Karpierz, Yu. Mityagin, M. B. Lifshits, F. Teppe, O. Klimenko, Y. M. Meziani, W. Knap, and S. D. Ganichev, “Helicity sensitive terahertz radiation detection by field effect transistors,” J. Appl. Phys. 111(12), 124504 (2012).
[Crossref]

Orlov, M.

F. Teppe, M. Orlov, A. El Fatimy, A. Tiberj, W. Knap, J. Torres, V. Gavrilenko, A. Shchepetov, Y. Roelens, and S. Bollaert, “Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors,” Appl. Phys. Lett. 89(22), 222109 (2006).
[Crossref]

Otsuji, T.

T. Otsuji, V. Popov, and V. Ryzhii, “Active graphene plasmonics for terahertz device applications,” J. Phys. D Appl. Phys. 47(9), 94006 (2014).
[Crossref]

Pala, N.

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342–1343 (2006).
[Crossref]

Popov, V.

T. Otsuji, V. Popov, and V. Ryzhii, “Active graphene plasmonics for terahertz device applications,” J. Phys. D Appl. Phys. 47(9), 94006 (2014).
[Crossref]

Roelens, Y.

F. Teppe, M. Orlov, A. El Fatimy, A. Tiberj, W. Knap, J. Torres, V. Gavrilenko, A. Shchepetov, Y. Roelens, and S. Bollaert, “Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors,” Appl. Phys. Lett. 89(22), 222109 (2006).
[Crossref]

Romanov, K. S.

K. S. Romanov and M. I. Dyakonov, “Theory of helicity-sensitive terahertz radiation detection by field effect transistors,” Appl. Phys. Lett. 102(15), 153502 (2013).
[Crossref]

Rumyantsev, S.

S. Rumyantsev, X. Liu, V. Kachorovskii, and M. Shur, “Homodyne Phase Sensitive Terahertz Spectrometer,” Appl. Phys. Lett. 111(12), 121105 (2017).
[Crossref]

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342–1343 (2006).
[Crossref]

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[Crossref]

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[Crossref]

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant Detection of Terahertz Radiation in Field Effect Transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[Crossref]

Ryzhii, V.

T. Otsuji, V. Popov, and V. Ryzhii, “Active graphene plasmonics for terahertz device applications,” J. Phys. D Appl. Phys. 47(9), 94006 (2014).
[Crossref]

Salama, K.

D. Veksler, A. Muraviev, V.Yu. Kachorovskii, T. Elkhatib, K. Salama, X.-C. Zhang, and M. Shur, “Imaging of field-effect transistors by focused terahertz radiation,” Solid State Electron. 53, 571–573 (2009).

Saylor, C. A.

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant Detection of Terahertz Radiation in Field Effect Transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[Crossref]

Schafberger, M.

C. Drexler, N. Dyakonova, P. Olbrich, J. Karch, M. Schafberger, K. Karpierz, Yu. Mityagin, M. B. Lifshits, F. Teppe, O. Klimenko, Y. M. Meziani, W. Knap, and S. D. Ganichev, “Helicity sensitive terahertz radiation detection by field effect transistors,” J. Appl. Phys. 111(12), 124504 (2012).
[Crossref]

Seliuta, D.

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342–1343 (2006).
[Crossref]

Shchepetov, A.

F. Teppe, M. Orlov, A. El Fatimy, A. Tiberj, W. Knap, J. Torres, V. Gavrilenko, A. Shchepetov, Y. Roelens, and S. Bollaert, “Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors,” Appl. Phys. Lett. 89(22), 222109 (2006).
[Crossref]

Shur, M.

S. Rumyantsev, X. Liu, V. Kachorovskii, and M. Shur, “Homodyne Phase Sensitive Terahertz Spectrometer,” Appl. Phys. Lett. 111(12), 121105 (2017).
[Crossref]

D. Veksler, A. Muraviev, V.Yu. Kachorovskii, T. Elkhatib, K. Salama, X.-C. Zhang, and M. Shur, “Imaging of field-effect transistors by focused terahertz radiation,” Solid State Electron. 53, 571–573 (2009).

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[Crossref]

M. Dyakonov and M. Shur, “Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current,” Phys. Rev. Lett. 71(15), 2465–2468 (1993).
[Crossref] [PubMed]

Shur, M. S.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[Crossref]

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342–1343 (2006).
[Crossref]

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant Detection of Terahertz Radiation in Field Effect Transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[Crossref]

M. Dyakonov and M. S. Shur, “Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid,” IEEE Trans. Electron Dev. 43(3), 380–387 (1996).
[Crossref]

I. V. Gorbenko, V. Yu. Kachorovskii, and M. S. Shur, “Plasmonic Helicity-Driven Detector of Terahertz Radiation,” Phys. Status Solidi Rapid Res. Lett., 1800464 (2018).
[Crossref]

Simin, G.

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant Detection of Terahertz Radiation in Field Effect Transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[Crossref]

Skotnicki, T.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[Crossref]

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[Crossref]

Tauk, R.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[Crossref]

Teppe, F.

C. Drexler, N. Dyakonova, P. Olbrich, J. Karch, M. Schafberger, K. Karpierz, Yu. Mityagin, M. B. Lifshits, F. Teppe, O. Klimenko, Y. M. Meziani, W. Knap, and S. D. Ganichev, “Helicity sensitive terahertz radiation detection by field effect transistors,” J. Appl. Phys. 111(12), 124504 (2012).
[Crossref]

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[Crossref]

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342–1343 (2006).
[Crossref]

F. Teppe, M. Orlov, A. El Fatimy, A. Tiberj, W. Knap, J. Torres, V. Gavrilenko, A. Shchepetov, Y. Roelens, and S. Bollaert, “Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors,” Appl. Phys. Lett. 89(22), 222109 (2006).
[Crossref]

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[Crossref]

Theron, D.

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342–1343 (2006).
[Crossref]

Tiberj, A.

F. Teppe, M. Orlov, A. El Fatimy, A. Tiberj, W. Knap, J. Torres, V. Gavrilenko, A. Shchepetov, Y. Roelens, and S. Bollaert, “Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors,” Appl. Phys. Lett. 89(22), 222109 (2006).
[Crossref]

Torres, J.

F. Teppe, M. Orlov, A. El Fatimy, A. Tiberj, W. Knap, J. Torres, V. Gavrilenko, A. Shchepetov, Y. Roelens, and S. Bollaert, “Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors,” Appl. Phys. Lett. 89(22), 222109 (2006).
[Crossref]

Valusis, G.

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342–1343 (2006).
[Crossref]

Veksler, D.

D. Veksler, A. Muraviev, V.Yu. Kachorovskii, T. Elkhatib, K. Salama, X.-C. Zhang, and M. Shur, “Imaging of field-effect transistors by focused terahertz radiation,” Solid State Electron. 53, 571–573 (2009).

Veksler, D. B.

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342–1343 (2006).
[Crossref]

Zhang, X.-C.

D. Veksler, A. Muraviev, V.Yu. Kachorovskii, T. Elkhatib, K. Salama, X.-C. Zhang, and M. Shur, “Imaging of field-effect transistors by focused terahertz radiation,” Solid State Electron. 53, 571–573 (2009).

Appl. Phys. Lett. (5)

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004).
[Crossref]

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[Crossref]

F. Teppe, M. Orlov, A. El Fatimy, A. Tiberj, W. Knap, J. Torres, V. Gavrilenko, A. Shchepetov, Y. Roelens, and S. Bollaert, “Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors,” Appl. Phys. Lett. 89(22), 222109 (2006).
[Crossref]

K. S. Romanov and M. I. Dyakonov, “Theory of helicity-sensitive terahertz radiation detection by field effect transistors,” Appl. Phys. Lett. 102(15), 153502 (2013).
[Crossref]

S. Rumyantsev, X. Liu, V. Kachorovskii, and M. Shur, “Homodyne Phase Sensitive Terahertz Spectrometer,” Appl. Phys. Lett. 111(12), 121105 (2017).
[Crossref]

Electron. Lett. (1)

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342–1343 (2006).
[Crossref]

IEEE Trans. Electron Dev. (1)

M. Dyakonov and M. S. Shur, “Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid,” IEEE Trans. Electron Dev. 43(3), 380–387 (1996).
[Crossref]

J. Appl. Phys. (2)

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant Detection of Terahertz Radiation in Field Effect Transistors,” J. Appl. Phys. 91(11), 9346–9353 (2002).
[Crossref]

C. Drexler, N. Dyakonova, P. Olbrich, J. Karch, M. Schafberger, K. Karpierz, Yu. Mityagin, M. B. Lifshits, F. Teppe, O. Klimenko, Y. M. Meziani, W. Knap, and S. D. Ganichev, “Helicity sensitive terahertz radiation detection by field effect transistors,” J. Appl. Phys. 111(12), 124504 (2012).
[Crossref]

J. Phys. D Appl. Phys. (1)

T. Otsuji, V. Popov, and V. Ryzhii, “Active graphene plasmonics for terahertz device applications,” J. Phys. D Appl. Phys. 47(9), 94006 (2014).
[Crossref]

Phys. Rev. Lett. (1)

M. Dyakonov and M. Shur, “Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current,” Phys. Rev. Lett. 71(15), 2465–2468 (1993).
[Crossref] [PubMed]

Solid State Electron. (1)

D. Veksler, A. Muraviev, V.Yu. Kachorovskii, T. Elkhatib, K. Salama, X.-C. Zhang, and M. Shur, “Imaging of field-effect transistors by focused terahertz radiation,” Solid State Electron. 53, 571–573 (2009).

Other (2)

I. V. Gorbenko, V. Yu. Kachorovskii, and M. S. Shur, “Plasmonic Helicity-Driven Detector of Terahertz Radiation,” Phys. Status Solidi Rapid Res. Lett., 1800464 (2018).
[Crossref]

G. R. Aizin, J. Mikalopas, and M. Shur, “Plasmons in ballistic nanostructures with stubs: transmission line approach” https://arxiv.org/abs/1806.00682 , (2018).

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (8)

Fig. 1
Fig. 1 TeraFET Spectrometer principle of operation: (a) phase shift induced by asymmetric antennas and circularly polarized radiation (b) nonzero incident angle of incoming radiation
Fig. 2
Fig. 2 Homodyne detector operation scheme
Fig. 3
Fig. 3 Resonant dependence of dimensionless response on the radiation frequency [Eq. (20)] for fundamental plasmonic frequency (N = 1) at different θ ( θ/π=0.1,0.2,0.3,0.4,0.5) increasing from bottom to the top at negative x.
Fig. 4
Fig. 4 Diamond TeraFET normalized response for Ug = 0.1 V and L = 130 nm (a) L = 65 nm (b) and L = 25nm (c).
Fig. 5
Fig. 5 Silicon TeraFET normalized response for 130 nm (a), 65 nm (b) and 25nm (c) channel lengths and Ug = 0.1 V.
Fig. 6
Fig. 6 AlGaN/GaN TeraFET normalized response for 130 nm (a), 65 nm (b) and 25nm (c) channel lengths and Ug = 0.1 V
Fig. 7
Fig. 7 InGaAs/GaAs TeraFET normalized response for 130 nm (a), 65 nm (b) and 25nm (c) channel lengths and Ug = 0.1 V.
Fig. 8
Fig. 8 Normalized response for different values of the gate voltage (Vg = 0.1 V, 0.2 V and 0.3 V) for 250 nm p-diamond (a) and 130 nm silicon (b) FETs.

Tables (1)

Tables Icon

Table 1 Materials parameters

Equations (20)

Equations on this page are rendered with MathJax. Learn more.

V U a 2
V U a 2 U b 2 .
V U a 2 sinθ.
V U local U signal [ A(1cosθ)+Bsinθ ],
{ U(0)= U g + U a cos(ωt), U(L)= U g + U a cos(ωt+θ).
v t +v v x +γv= e m U x ,
U t + (Uv) x =0.
n s =CU/e,
V= βω U a 2 sinθ 4 U g | sin(kL) | 2 ω 2 + γ 2 ,
Ω= ω 4 + ω 2 γ 2 2 + ω 2 2 , Γ= ω 4 + ω 2 γ 2 2 ω 2 2 .
Ωω, Γ γ 2 , ΩΓ,
V 4δωγ (1) N 4 U g (δ ω 2 + γ 2 /4) U a 2 sinθ,
ω N 4 + ω N 2 γ 2 2 + ω N 2 2 = πs L N.
ω N = ( πsN L ) 2 ( πsN L ) 2 + γ 2 4 = e π 2 N 2 U g m L 2 e π 2 N 2 U g m L 2 + γ 2 4 { U g ,for U g U γ N U g ,for U g U γ N ,
{ U(0)= U local cosωt+ U signal cosωt, U(L)= U local cosωt+ U signal cos(ωt+θ).
U(0)= U a cosωt, U(L)= U b cos(ωt+ θ ˜ ),
{ A= ω[ ( 1+ γΩ Γω )sin h 2 ( ΓL s )( 1 γΓ ωΩ )si n 2 ( ΩL s ) ] 2 U g | sin(kL) | 2 ω 2 + γ 2 , B= 2ω U g | sin(kL) | 2 ω 2 + γ 2 sinh( ΓL s )sin( ΩL s ).
V U local U signal 2 U g (3 γ 2 /4δ ω 2 )(1cosθ)+2 (1) N γδωsinθ (δ ω 2 + γ 2 /4) .
V(δω)V()= U local U signal 2 U g F( δω γ )
F( x )= 1cosθ+2 (1) N xsinθ x 2 +1/4

Metrics