Abstract

We demonstrate hybridly integrated narrow-linewidth, tunable diode lasers in the InP/GaAs-Si3N4 platform. Silicon nitride photonic integrated circuits, instead of silicon waveguides that suffer from high optical loss near 1 µm, are chosen to build a tunable external cavity for both InP and GaAs gain chips at the same time. Single frequency lasing at 1.55 µm and 1 µm is simultaneously obtained on a single chip with spectral linewidths of 18-kHz and 70-kHz, a side mode suppression ratio of 52 dB and 46 dB, and tuning range of 46 nm and 38 nm, respectively. The resulting dual-band narrow-linewidth diode lasers have potential for use in a variety of novel applications such as integrated difference-frequency generation, quantum photonics, and nonlinear optics.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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2018 (8)

K. Kasai, M. Nakazawa, M. Ishikawa, and H. Ishii, “8 kHz linewidth, 50 mW output, full C-band wavelength tunable DFB LD array with self-optical feedback,” Opt. Express 26(5), 5675–5685 (2018).
[Crossref] [PubMed]

G. Liu, V. S. Ilchenko, T. Su, Y.-C. Ling, S. Feng, K. Shang, Y. Zhang, W. Liang, A. A. Savchenkov, A. B. Matsko, L. Maleki, and S. J. Ben Yoo, “Low-loss prism-waveguide optical coupling for ultrahigh-Q low-index monolithic resonators,” Optica 5(2), 219 (2018).
[Crossref]

Y. Zhu and L. Zhu, “Integrated Single Frequency, High Power Laser Sources Based on Monolithic and Hybrid Coherent Beam Combining,” IEEE J. Sel. Top. Quantum Electron. 24(6), 1–8 (2018).
[Crossref]

A. Verdier, G. de Valicourt, R. Brenot, H. Debregeas, P. Dong, M. Earnshaw, H. Carrere, and Y.-K. Chen, “Ultrawideband Wavelength-Tunable Hybrid External-Cavity Lasers,” J. Lightwave Technol. 36(1), 37–43 (2018).
[Crossref]

G. de Valicourt, C.-M. Chang, M. S. Eggleston, A. Melikyan, C. Zhu, J. Lee, J. E. Simsarian, S. Chandrasekhar, J. H. Sinsky, K. W. Kim, P. Dong, A. Maho, A. Verdier, R. Brenot, and Y. K. Chen, “Photonic Integrated Circuit Based on Hybrid III–V/Silicon Integration,” J. Lightwave Technol. 36(2), 265–273 (2018).
[Crossref]

Y. Zhu and L. Zhu, “Accessing the Exceptional Points in Coupled Fabry–Perot Resonators through Hybrid Integration,” ACS Photonics 5(12), 4920–4927 (2018).
[Crossref]

H. Guan, A. Novack, T. Galfsky, Y. Ma, S. Fathololoumi, A. Horth, T. N. Huynh, J. Roman, R. Shi, M. Caverley, Y. Liu, T. Baehr-Jones, K. Bergman, and M. Hochberg, “Widely-tunable, narrow-linewidth III-V/silicon hybrid external-cavity laser for coherent communication,” Opt. Express 26(7), 7920–7933 (2018).
[Crossref] [PubMed]

Y. Zhu, Y. Zhao, and L. Zhu, “Loss induced coherent combining in InP-Si3N4 hybrid platform,” Sci. Rep. 8(1), 878 (2018).
[Crossref] [PubMed]

2017 (4)

2016 (7)

S. Dhoore, L. Li, A. Abbasi, G. Roelkens, and G. Morthier, “Demonstration of a discretely tunable III-V-on-silicon sampled grating DFB laser,” IEEE Photonics Technol. Lett. 28(21), 2343–2346 (2016).
[Crossref]

W. L. Zhang, Y. B. Song, X. P. Zeng, R. Ma, Z. J. Yang, and Y. J. Rao, “Temperature-controlled mode selection of Er-doped random fiber laser with disordered Bragg gratings,” Photon. Res. 4(3), 102 (2016).
[Crossref]

A. A. Liles, K. Debnath, and L. O’Faolain, “Lithographic wavelength control of an external cavity laser with a silicon photonic crystal cavity-based resonant reflector,” Opt. Lett. 41(5), 894–897 (2016).
[Crossref] [PubMed]

X. Luo, Y. Cheng, J. Song, T.-Y. Liow, Q. J. Wang, and M. Yu, “Wafer-Scale Dies-Transfer Bonding Technology for Hybrid III/V-on-Silicon Photonic Integrated Circuit Application,” IEEE J. Sel. Top. Quantum Electron. 22(6), 443–454 (2016).
[Crossref]

Y. Fan, J. P. Epping, R. M. Oldenbeuving, C. G. H. Roeloffzen, M. Hoekman, R. Dekker, R. G. Heideman, P. J. M. van der Slot, and K.-J. Boller, “Optically Integrated InP–Si$_3$ N$_4$ Hybrid Laser,” IEEE Photonics J. 8(6), 1–11 (2016).
[Crossref]

X. Zheng, I. Shubin, J.-H. Lee, S. Lin, Y. Luo, J. Yao, S. S. Djordjevic, J. Bovington, D. Y. Lee, H. D. Thacker, C. Zhang, K. Raj, J. E. Cunningham, and A. V. Krishnamoorthy, “III-V/Si Hybrid Laser Arrays Using Back End of the Line (BEOL) Integration,” IEEE J. Sel. Top. Quantum Electron. 22(6), 204–217 (2016).
[Crossref]

T. Komljenovic, M. Davenport, J. Hulme, A. Y. Liu, C. T. Santis, A. Spott, S. Srinivasan, E. J. Stanton, C. Zhang, and J. E. Bowers, “Heterogeneous Silicon Photonic Integrated Circuits,” J. Lightwave Technol. 34(1), 20–35 (2016).
[Crossref]

2015 (4)

N. Kobayashi, K. Sato, M. Namiwaka, K. Yamamoto, S. Watanabe, T. Kita, H. Yamada, and H. Yamazaki, “Silicon Photonic Hybrid Ring-Filter External Cavity Wavelength Tunable Lasers,” J. Lightwave Technol. 33(6), 1241–1246 (2015).
[Crossref]

W. Liang, V. S. Ilchenko, D. Eliyahu, A. A. Savchenkov, A. B. Matsko, D. Seidel, and L. Maleki, “Ultralow noise miniature external cavity semiconductor laser,” Nat. Commun. 6(1), 7371 (2015).
[Crossref] [PubMed]

T. Komljenovic, S. Srinivasan, E. Norberg, M. Davenport, G. Fish, and J. E. Bowers, “Widely Tunable Narrow-Linewidth Monolithically Integrated External-Cavity Semiconductor Lasers,” IEEE J. Sel. Top. Quantum Electron. 21(6), 214–222 (2015).
[Crossref]

E. J. Stanton, M. J. R. Heck, J. Bovington, A. Spott, and J. E. Bowers, “Multi-octave spectral beam combiner on ultra-broadband photonic integrated circuit platform,” Opt. Express 23(9), 11272–11283 (2015).
[Crossref] [PubMed]

2014 (3)

2013 (4)

2012 (2)

2010 (1)

2009 (2)

2008 (2)

2007 (1)

2006 (1)

P. Dupriez, A. Piper, A. Malinowski, J. K. Sahu, M. Ibsen, B. C. Thomsen, Y. Jeong, L. M. Hickey, M. N. Zervas, J. Nilsson, and D. J. Richardson, “High average power, high repetition rate, picosecond pulsed fiber master oscillator power amplifier source seeded by a gain-switched laser diode at 1060 nm,” IEEE Photonics Technol. Lett. 18(9), 1013–1015 (2006).
[Crossref]

2004 (1)

2002 (1)

B. Liu, A. Shakouri, and J. E. Bowers, “Wide tunable double ring resonator coupled lasers,” IEEE Photonics Technol. Lett. 14(5), 600–602 (2002).
[Crossref]

2001 (1)

B. Liu, A. Shakouri, and J. E. Bowers, “Passive microring-resonator-coupled lasers,” Appl. Phys. Lett. 79(22), 3561–3563 (2001).
[Crossref]

1998 (1)

1991 (1)

I. H. White, “A multichannel grating cavity laser for wavelength division multiplexing applications,” J. Lightwave Technol. 9(7), 893–899 (1991).
[Crossref]

1982 (1)

C. Henry, “Theory of the linewidth of semiconductor lasers,” IEEE J. Quantum Electron. 18(2), 259–264 (1982).
[Crossref]

Abbasi, A.

S. Dhoore, L. Li, A. Abbasi, G. Roelkens, and G. Morthier, “Demonstration of a discretely tunable III-V-on-silicon sampled grating DFB laser,” IEEE Photonics Technol. Lett. 28(21), 2343–2346 (2016).
[Crossref]

Adibi, A.

Asghari, M.

Atabaki, A. H.

Atwater, H. A.

Baehr-Jones, T.

Baets, R.

Bai, Y.

Beckx, S.

Belkin, M. A.

Ben Yoo, S. J.

Bergman, K.

Bienstman, P.

Bijlani, B. J.

Bin Shen,

S. Romero-Garcia, B. Marzban, F. Merget, Bin Shen, and J. Witzens, “Edge Couplers With Relaxed Alignment Tolerance for Pick-and-Place Hybrid Integration of III–V Lasers With SOI Waveguides,” IEEE J. Sel. Top. Quantum Electron. 20(4), 369–379 (2014).
[Crossref]

Bogaerts, W.

Boller, K.-J.

Y. Fan, R. E. M. Lammerink, J. Mak, R. M. Oldenbeuving, P. J. M. van der Slot, and K.-J. Boller, “Spectral linewidth analysis of semiconductor hybrid lasers with feedback from an external waveguide resonator circuit,” Opt. Express 25(26), 32767 (2017).
[Crossref]

Y. Fan, J. P. Epping, R. M. Oldenbeuving, C. G. H. Roeloffzen, M. Hoekman, R. Dekker, R. G. Heideman, P. J. M. van der Slot, and K.-J. Boller, “Optically Integrated InP–Si$_3$ N$_4$ Hybrid Laser,” IEEE Photonics J. 8(6), 1–11 (2016).
[Crossref]

Bordel, D.

Bovington, J.

X. Zheng, I. Shubin, J.-H. Lee, S. Lin, Y. Luo, J. Yao, S. S. Djordjevic, J. Bovington, D. Y. Lee, H. D. Thacker, C. Zhang, K. Raj, J. E. Cunningham, and A. V. Krishnamoorthy, “III-V/Si Hybrid Laser Arrays Using Back End of the Line (BEOL) Integration,” IEEE J. Sel. Top. Quantum Electron. 22(6), 204–217 (2016).
[Crossref]

E. J. Stanton, M. J. R. Heck, J. Bovington, A. Spott, and J. E. Bowers, “Multi-octave spectral beam combiner on ultra-broadband photonic integrated circuit platform,” Opt. Express 23(9), 11272–11283 (2015).
[Crossref] [PubMed]

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Figures (4)

Fig. 1
Fig. 1 Schematic plot of the hybridly integrated diode laser.
Fig. 2
Fig. 2 (a) Spot size converter and the profile evolution of the optical mode propagating from the single-mode ridge waveguide in the gain chip to the silicon nitride waveguide. (b) Simulated and measured transmission spectra of the double-ring filter. (c) SEM image of the Si3N4 cleaved waveguide facet.
Fig. 3
Fig. 3 Experimental results of the InP-Si3N4 hybrid laser. (a) L-I curve (blue) and I-V curve (red). (b) Normalized output optical spectrum with the single frequency operation. (c) Delayed self-heterodyne experimental setup; OSA: optical spectrum analyzer; VOA: variable optical attenuator; FPC: fiber polarization controller; PD: photodiode; ESA: electrical spectrum analyzer; EOM: electro-optic modulator. (d) Recorded RF beat spectrum (red dots), the blue line shows a Lorentzian fit corresponding to a laser linewidth of 18-kHz. (e) Superimposed spectra when we thermally tune one of the two microresonators (the tuning range is ~46 nm).
Fig. 4
Fig. 4 Experimental results of the GaAs-Si3N4 hybrid laser. (a) L-I curve (blue) and I-V curve (red). (b) Normalized output optical spectrum. (c) Recorded RF beat spectrum (red dots), the blue line shows a Lorentzian fit corresponding to a laser linewidth of 70-kHz. (d) Superimposed spectra when we thermally tune one of the two microresonators.

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