Abstract

We investigated the electrical and optical performances of semipolar (11-22) InGaN green µLEDs with a size ranging from 20 × 20 µm2 to 100 × 100 µm2, grown on a low defect density and large area (11-22) GaN template on patterned sapphire substrate. Atom probe tomography (APT) gave insights on quantum wells (QWs) thickness and indium composition and indicated that no indium clusters were observed in the QWs. The µLEDs showed a small wavelength blueshift of 5 nm, as the current density increased from 5 to 90 A/cm2 and exhibited a size-independent EQE of 2% by sidewall passivation using atomic-layer deposition, followed by an extremely low leakage current of ~0.1 nA at −5 V. Moreover, optical polarization behavior with a polarization ratio of 40% was observed. This work demonstrated long-wavelength µLEDs fabricated on semipolar GaN grown on foreign substrate, which are applicable for a variety of display applications at a low cost.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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    [Crossref]
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    [Crossref]
  3. V. W. Lee, N. Twu, and I. Kymissis, “Micro-LED Technologies and Applications frontline technology,” Inf. Disp. 32(6), 16–23 (2016).
    [Crossref]
  4. D. Hwang, A. Mughal, C. D. Pynn, S. Nakamura, and S. P. DenBaars, “Sustained high external quantum efficiency in ultrasmall blue III-nitride micro-LEDs,” Appl. Phys. Express 10(3), 032101 (2017).
    [Crossref]
  5. D. Hwang, A. J. Mughal, M. S. Wong, A. I. Alhassan, S. Nakamura, and S. P. DenBaars, “Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs,” Appl. Phys. Express 11(1), 012102 (2018).
    [Crossref]
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    [Crossref] [PubMed]
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    [Crossref] [PubMed]
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    [Crossref] [PubMed]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  13. D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (30-3-1) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105(17), 171106 (2014).
    [Crossref]
  14. Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, and J. S. Speck, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
    [Crossref]
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    [Crossref]
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    [Crossref]
  17. C. D. Pynn, S. J. Kowsz, S. H. Oh, H. Gardner, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy,” Appl. Phys. Lett. 109(4), 041107 (2016).
    [Crossref]
  18. H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. A. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
    [Crossref] [PubMed]
  19. F. Tendille, P. De Mierry, P. Vennéguès, S. Chenot, and M. Teisseire, “Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults,” J. Cryst. Growth 404(15), 177–183 (2014).
    [Crossref]
  20. K. Thompson, D. Lawrence, D. J. Larson, J. D. Olson, T. F. Kelly, and B. Gorman, “In situ site-specific specimen preparation for atom probe tomography,” Ultramicroscopy 107(2-3), 131–139 (2007).
    [Crossref] [PubMed]
  21. F. Vurpillot, B. Gault, B. P. Geiser, and D. J. Larson, “Reconstructing atom probe data: A review,” Ultramicroscopy 132, 19–30 (2013).
    [Crossref] [PubMed]
  22. R. Shivaraman, Y. Kawaguchi, S. Tanaka, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Comparative analysis of (20-21) and (20-2-1) semipolar GaN light emitting diodes using atom probe tomography,” Appl. Phys. Lett. 102(25), 251104 (2013).
    [Crossref]
  23. P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux, and J. Zuniga‐Perez, “Green emission from semipolar InGaN quantum wells grown on low-defect (11-22) GaN templates fabricated on patterned r-sapphire,” Phys. Status Solidi, B Basic Res. 253(1), 105–111 (2016).
    [Crossref]
  24. M. Khoury, H. Li, B. Bonef, L. Y. Kuritzky, A. J. Mughal, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Semipolar (20-21) GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations,” Appl. Phys. Express 11(3), 036501 (2018).
    [Crossref]
  25. B. Bonef, M. Catalano, C. Lund, S. P. Denbaars, S. Nakamura, U. K. Mishra, M. J. Kim, and S. Keller, “Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography,” Appl. Phys. Lett. 110(14), 143101 (2017).
    [Crossref]
  26. K. L. Torres, M. Daniil, M. A. Willard, and G. B. Thompson, “The influence of voxel size on atom probe tomography data,” Ultramicroscopy 111(6), 464–468 (2011).
    [Crossref] [PubMed]
  27. M. P. Moody, L. T. Stephenson, A. V. Ceguerra, and S. P. Ringer, “Quantitative binomial distribution analyses of nanoscale like-solute atom clustering and segregation in atom probe tomography data,” Microsc. Res. Tech. 71(7), 542–550 (2008).
    [Crossref] [PubMed]
  28. Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, and S. P. DenBaars, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 51109 (2011).
    [Crossref]
  29. N. Fellows, H. Sato, H. Masui, S. P. DenBaars, and S. Nakamura, “Increased polarization ratio on semipolar (11-22) InGaN/GaN light-emitting diodes with increasing indium composition,” Jpn. J. Appl. Phys., 47(10), 7854–7856 (2008).
  30. A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11-22) InGaN Multiple Quantum Well Laser Diode Structures,” Appl. Phys. Express 1(9), 091103 (2008).
    [Crossref]
  31. S. E. Brinkley, Y.-D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011).
    [Crossref]
  32. H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m-plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi., A Appl. Mater. Sci. 205(5), 1203–1206 (2008).
    [Crossref]
  33. F. Olivier, A. Daami, C. Licitra, and F. Templier, “Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study,” Appl. Phys. Lett. 111(2), 022104 (2017).
    [Crossref]

2018 (5)

D. Hwang, A. J. Mughal, M. S. Wong, A. I. Alhassan, S. Nakamura, and S. P. DenBaars, “Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs,” Appl. Phys. Express 11(1), 012102 (2018).
[Crossref]

M. S. Wong, D. Hwang, A. I. Alhassan, C. Lee, R. Ley, S. Nakamura, and S. P. DenBaars, “High Efficiency of III-Nitride Micro-Light-Emitting Diodes by Sidewall Passivation Using Atomic Layer Deposition,” Opt. Express 26(16), 21324–21331 (2018).
[Crossref] [PubMed]

A. I. Alhassan, N. G. Young, R. M. Farrell, C. Pynn, F. Wu, A. Y. Alyamani, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Development of high performance green c-plane III-nitride light-emitting diodes,” Opt. Express 26(5), 5591–5601 (2018).
[Crossref] [PubMed]

P. P. Li, Y. B. Zhao, H. J. Li, J. M. Che, Z. H. Zhang, Z. C. Li, Y. Y. Zhang, L. C. Wang, M. Liang, X. Y. Yi, and G. H. Wang, “Very high external quantum efficiency and wall-plug efficiency 527 nm InGaN green LEDs by MOCVD,” Opt. Express 26(25), 33108–33115 (2018).
[Crossref] [PubMed]

M. Khoury, H. Li, B. Bonef, L. Y. Kuritzky, A. J. Mughal, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Semipolar (20-21) GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations,” Appl. Phys. Express 11(3), 036501 (2018).
[Crossref]

2017 (5)

B. Bonef, M. Catalano, C. Lund, S. P. Denbaars, S. Nakamura, U. K. Mishra, M. J. Kim, and S. Keller, “Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography,” Appl. Phys. Lett. 110(14), 143101 (2017).
[Crossref]

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. A. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref] [PubMed]

F. Olivier, A. Daami, C. Licitra, and F. Templier, “Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study,” Appl. Phys. Lett. 111(2), 022104 (2017).
[Crossref]

F. Olivier, S. Tirano, L. Dupré, B. Aventurier, C. Largeron, and F. Templier, “Influence of size-reduction on the performances of GaN-based micro-LEDs for display application,” J. Lumin. 191, 112–116 (2017).
[Crossref]

D. Hwang, A. Mughal, C. D. Pynn, S. Nakamura, and S. P. DenBaars, “Sustained high external quantum efficiency in ultrasmall blue III-nitride micro-LEDs,” Appl. Phys. Express 10(3), 032101 (2017).
[Crossref]

2016 (4)

V. W. Lee, N. Twu, and I. Kymissis, “Micro-LED Technologies and Applications frontline technology,” Inf. Disp. 32(6), 16–23 (2016).
[Crossref]

S. H. Oh, B. P. Yonkee, M. Cantore, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Semipolar III-nitride light-emitting diodes with negligible efficiency droop up to ∼1 W,” Appl. Phys. Express 9(10), 102102 (2016).
[Crossref]

C. D. Pynn, S. J. Kowsz, S. H. Oh, H. Gardner, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy,” Appl. Phys. Lett. 109(4), 041107 (2016).
[Crossref]

P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux, and J. Zuniga‐Perez, “Green emission from semipolar InGaN quantum wells grown on low-defect (11-22) GaN templates fabricated on patterned r-sapphire,” Phys. Status Solidi, B Basic Res. 253(1), 105–111 (2016).
[Crossref]

2014 (2)

F. Tendille, P. De Mierry, P. Vennéguès, S. Chenot, and M. Teisseire, “Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults,” J. Cryst. Growth 404(15), 177–183 (2014).
[Crossref]

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (30-3-1) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105(17), 171106 (2014).
[Crossref]

2013 (3)

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar (20-21) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting,” IEEE/OSA. J. Disp. Technol. 9(4), 190–198 (2013).
[Crossref]

F. Vurpillot, B. Gault, B. P. Geiser, and D. J. Larson, “Reconstructing atom probe data: A review,” Ultramicroscopy 132, 19–30 (2013).
[Crossref] [PubMed]

R. Shivaraman, Y. Kawaguchi, S. Tanaka, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Comparative analysis of (20-21) and (20-2-1) semipolar GaN light emitting diodes using atom probe tomography,” Appl. Phys. Lett. 102(25), 251104 (2013).
[Crossref]

2012 (1)

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, and J. S. Speck, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

2011 (5)

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar (20-2-1) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2,” Appl. Phys. Express 4(8), 82104 (2011).
[Crossref]

J. Day, J. Li, D. Y. C. Lie, C. Bradford, J. Y. Lin, and H. X. Jiang, “III-Nitride full-scale high-resolution microdisplays,” Appl. Phys. Lett. 99(3), 031116 (2011).
[Crossref]

K. L. Torres, M. Daniil, M. A. Willard, and G. B. Thompson, “The influence of voxel size on atom probe tomography data,” Ultramicroscopy 111(6), 464–468 (2011).
[Crossref] [PubMed]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, and S. P. DenBaars, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 51109 (2011).
[Crossref]

S. E. Brinkley, Y.-D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011).
[Crossref]

2010 (2)

H. Masui, S. Nakamura, S. P. DenBaars, and U. K. Mishra, “Nonpolar and semipolar III-nitride light-emitting diodes: Achievements and challenges,” IEEE Trans. Electron Dev. 57(1), 88–100 (2010).
[Crossref]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20-21) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

2009 (1)

D. F. Feezell, M. C. Schmidt, S. P. DenBaars, and S. Nakamura, “Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes,” MRS Bull. 34(5), 318–323 (2009).
[Crossref]

2008 (4)

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m-plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi., A Appl. Mater. Sci. 205(5), 1203–1206 (2008).
[Crossref]

N. Fellows, H. Sato, H. Masui, S. P. DenBaars, and S. Nakamura, “Increased polarization ratio on semipolar (11-22) InGaN/GaN light-emitting diodes with increasing indium composition,” Jpn. J. Appl. Phys., 47(10), 7854–7856 (2008).

A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11-22) InGaN Multiple Quantum Well Laser Diode Structures,” Appl. Phys. Express 1(9), 091103 (2008).
[Crossref]

M. P. Moody, L. T. Stephenson, A. V. Ceguerra, and S. P. Ringer, “Quantitative binomial distribution analyses of nanoscale like-solute atom clustering and segregation in atom probe tomography data,” Microsc. Res. Tech. 71(7), 542–550 (2008).
[Crossref] [PubMed]

2007 (1)

K. Thompson, D. Lawrence, D. J. Larson, J. D. Olson, T. F. Kelly, and B. Gorman, “In situ site-specific specimen preparation for atom probe tomography,” Ultramicroscopy 107(2-3), 131–139 (2007).
[Crossref] [PubMed]

Alhassan, A. I.

D. Hwang, A. J. Mughal, M. S. Wong, A. I. Alhassan, S. Nakamura, and S. P. DenBaars, “Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs,” Appl. Phys. Express 11(1), 012102 (2018).
[Crossref]

A. I. Alhassan, N. G. Young, R. M. Farrell, C. Pynn, F. Wu, A. Y. Alyamani, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Development of high performance green c-plane III-nitride light-emitting diodes,” Opt. Express 26(5), 5591–5601 (2018).
[Crossref] [PubMed]

M. S. Wong, D. Hwang, A. I. Alhassan, C. Lee, R. Ley, S. Nakamura, and S. P. DenBaars, “High Efficiency of III-Nitride Micro-Light-Emitting Diodes by Sidewall Passivation Using Atomic Layer Deposition,” Opt. Express 26(16), 21324–21331 (2018).
[Crossref] [PubMed]

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. A. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref] [PubMed]

Alyamani, A. Y.

Aventurier, B.

F. Olivier, S. Tirano, L. Dupré, B. Aventurier, C. Largeron, and F. Templier, “Influence of size-reduction on the performances of GaN-based micro-LEDs for display application,” J. Lumin. 191, 112–116 (2017).
[Crossref]

Azimah, E.

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. A. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref] [PubMed]

Becerra, D. L.

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (30-3-1) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105(17), 171106 (2014).
[Crossref]

Bonef, B.

M. Khoury, H. Li, B. Bonef, L. Y. Kuritzky, A. J. Mughal, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Semipolar (20-21) GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations,” Appl. Phys. Express 11(3), 036501 (2018).
[Crossref]

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. A. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref] [PubMed]

B. Bonef, M. Catalano, C. Lund, S. P. Denbaars, S. Nakamura, U. K. Mishra, M. J. Kim, and S. Keller, “Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography,” Appl. Phys. Lett. 110(14), 143101 (2017).
[Crossref]

Bradford, C.

J. Day, J. Li, D. Y. C. Lie, C. Bradford, J. Y. Lin, and H. X. Jiang, “III-Nitride full-scale high-resolution microdisplays,” Appl. Phys. Lett. 99(3), 031116 (2011).
[Crossref]

Brinkley, S. E.

S. E. Brinkley, Y.-D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011).
[Crossref]

Cantore, M.

S. H. Oh, B. P. Yonkee, M. Cantore, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Semipolar III-nitride light-emitting diodes with negligible efficiency droop up to ∼1 W,” Appl. Phys. Express 9(10), 102102 (2016).
[Crossref]

Catalano, M.

B. Bonef, M. Catalano, C. Lund, S. P. Denbaars, S. Nakamura, U. K. Mishra, M. J. Kim, and S. Keller, “Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography,” Appl. Phys. Lett. 110(14), 143101 (2017).
[Crossref]

Ceguerra, A. V.

M. P. Moody, L. T. Stephenson, A. V. Ceguerra, and S. P. Ringer, “Quantitative binomial distribution analyses of nanoscale like-solute atom clustering and segregation in atom probe tomography data,” Microsc. Res. Tech. 71(7), 542–550 (2008).
[Crossref] [PubMed]

Chakraborty, A.

S. E. Brinkley, Y.-D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011).
[Crossref]

Che, J. M.

Chenot, S.

F. Tendille, P. De Mierry, P. Vennéguès, S. Chenot, and M. Teisseire, “Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults,” J. Cryst. Growth 404(15), 177–183 (2014).
[Crossref]

Chung, R. B.

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, and S. P. DenBaars, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 51109 (2011).
[Crossref]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20-21) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Cohen, D.

S. E. Brinkley, Y.-D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011).
[Crossref]

Cohen, D. A.

A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11-22) InGaN Multiple Quantum Well Laser Diode Structures,” Appl. Phys. Express 1(9), 091103 (2008).
[Crossref]

Daami, A.

F. Olivier, A. Daami, C. Licitra, and F. Templier, “Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study,” Appl. Phys. Lett. 111(2), 022104 (2017).
[Crossref]

Daniil, M.

K. L. Torres, M. Daniil, M. A. Willard, and G. B. Thompson, “The influence of voxel size on atom probe tomography data,” Ultramicroscopy 111(6), 464–468 (2011).
[Crossref] [PubMed]

Day, J.

J. Day, J. Li, D. Y. C. Lie, C. Bradford, J. Y. Lin, and H. X. Jiang, “III-Nitride full-scale high-resolution microdisplays,” Appl. Phys. Lett. 99(3), 031116 (2011).
[Crossref]

De Mierry, P.

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. A. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref] [PubMed]

P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux, and J. Zuniga‐Perez, “Green emission from semipolar InGaN quantum wells grown on low-defect (11-22) GaN templates fabricated on patterned r-sapphire,” Phys. Status Solidi, B Basic Res. 253(1), 105–111 (2016).
[Crossref]

F. Tendille, P. De Mierry, P. Vennéguès, S. Chenot, and M. Teisseire, “Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults,” J. Cryst. Growth 404(15), 177–183 (2014).
[Crossref]

DenBaars, S. P.

M. Khoury, H. Li, B. Bonef, L. Y. Kuritzky, A. J. Mughal, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Semipolar (20-21) GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations,” Appl. Phys. Express 11(3), 036501 (2018).
[Crossref]

M. S. Wong, D. Hwang, A. I. Alhassan, C. Lee, R. Ley, S. Nakamura, and S. P. DenBaars, “High Efficiency of III-Nitride Micro-Light-Emitting Diodes by Sidewall Passivation Using Atomic Layer Deposition,” Opt. Express 26(16), 21324–21331 (2018).
[Crossref] [PubMed]

A. I. Alhassan, N. G. Young, R. M. Farrell, C. Pynn, F. Wu, A. Y. Alyamani, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Development of high performance green c-plane III-nitride light-emitting diodes,” Opt. Express 26(5), 5591–5601 (2018).
[Crossref] [PubMed]

D. Hwang, A. J. Mughal, M. S. Wong, A. I. Alhassan, S. Nakamura, and S. P. DenBaars, “Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs,” Appl. Phys. Express 11(1), 012102 (2018).
[Crossref]

D. Hwang, A. Mughal, C. D. Pynn, S. Nakamura, and S. P. DenBaars, “Sustained high external quantum efficiency in ultrasmall blue III-nitride micro-LEDs,” Appl. Phys. Express 10(3), 032101 (2017).
[Crossref]

B. Bonef, M. Catalano, C. Lund, S. P. Denbaars, S. Nakamura, U. K. Mishra, M. J. Kim, and S. Keller, “Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography,” Appl. Phys. Lett. 110(14), 143101 (2017).
[Crossref]

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. A. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref] [PubMed]

C. D. Pynn, S. J. Kowsz, S. H. Oh, H. Gardner, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy,” Appl. Phys. Lett. 109(4), 041107 (2016).
[Crossref]

S. H. Oh, B. P. Yonkee, M. Cantore, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Semipolar III-nitride light-emitting diodes with negligible efficiency droop up to ∼1 W,” Appl. Phys. Express 9(10), 102102 (2016).
[Crossref]

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (30-3-1) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105(17), 171106 (2014).
[Crossref]

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar (20-21) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting,” IEEE/OSA. J. Disp. Technol. 9(4), 190–198 (2013).
[Crossref]

R. Shivaraman, Y. Kawaguchi, S. Tanaka, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Comparative analysis of (20-21) and (20-2-1) semipolar GaN light emitting diodes using atom probe tomography,” Appl. Phys. Lett. 102(25), 251104 (2013).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, and S. P. DenBaars, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 51109 (2011).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar (20-2-1) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2,” Appl. Phys. Express 4(8), 82104 (2011).
[Crossref]

S. E. Brinkley, Y.-D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011).
[Crossref]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20-21) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

H. Masui, S. Nakamura, S. P. DenBaars, and U. K. Mishra, “Nonpolar and semipolar III-nitride light-emitting diodes: Achievements and challenges,” IEEE Trans. Electron Dev. 57(1), 88–100 (2010).
[Crossref]

D. F. Feezell, M. C. Schmidt, S. P. DenBaars, and S. Nakamura, “Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes,” MRS Bull. 34(5), 318–323 (2009).
[Crossref]

N. Fellows, H. Sato, H. Masui, S. P. DenBaars, and S. Nakamura, “Increased polarization ratio on semipolar (11-22) InGaN/GaN light-emitting diodes with increasing indium composition,” Jpn. J. Appl. Phys., 47(10), 7854–7856 (2008).

A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11-22) InGaN Multiple Quantum Well Laser Diode Structures,” Appl. Phys. Express 1(9), 091103 (2008).
[Crossref]

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m-plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi., A Appl. Mater. Sci. 205(5), 1203–1206 (2008).
[Crossref]

Dupré, L.

F. Olivier, S. Tirano, L. Dupré, B. Aventurier, C. Largeron, and F. Templier, “Influence of size-reduction on the performances of GaN-based micro-LEDs for display application,” J. Lumin. 191, 112–116 (2017).
[Crossref]

Farrell, R. M.

A. I. Alhassan, N. G. Young, R. M. Farrell, C. Pynn, F. Wu, A. Y. Alyamani, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Development of high performance green c-plane III-nitride light-emitting diodes,” Opt. Express 26(5), 5591–5601 (2018).
[Crossref] [PubMed]

S. H. Oh, B. P. Yonkee, M. Cantore, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Semipolar III-nitride light-emitting diodes with negligible efficiency droop up to ∼1 W,” Appl. Phys. Express 9(10), 102102 (2016).
[Crossref]

C. D. Pynn, S. J. Kowsz, S. H. Oh, H. Gardner, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy,” Appl. Phys. Lett. 109(4), 041107 (2016).
[Crossref]

Feezell, D.

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar (20-2-1) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2,” Appl. Phys. Express 4(8), 82104 (2011).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, and S. P. DenBaars, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 51109 (2011).
[Crossref]

Feezell, D. F.

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar (20-21) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting,” IEEE/OSA. J. Disp. Technol. 9(4), 190–198 (2013).
[Crossref]

D. F. Feezell, M. C. Schmidt, S. P. DenBaars, and S. Nakamura, “Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes,” MRS Bull. 34(5), 318–323 (2009).
[Crossref]

Fellows, N.

N. Fellows, H. Sato, H. Masui, S. P. DenBaars, and S. Nakamura, “Increased polarization ratio on semipolar (11-22) InGaN/GaN light-emitting diodes with increasing indium composition,” Jpn. J. Appl. Phys., 47(10), 7854–7856 (2008).

Fellows, N. N.

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m-plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi., A Appl. Mater. Sci. 205(5), 1203–1206 (2008).
[Crossref]

Fujito, K.

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (30-3-1) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105(17), 171106 (2014).
[Crossref]

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, and J. S. Speck, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar (20-2-1) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2,” Appl. Phys. Express 4(8), 82104 (2011).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, and S. P. DenBaars, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 51109 (2011).
[Crossref]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20-21) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11-22) InGaN Multiple Quantum Well Laser Diode Structures,” Appl. Phys. Express 1(9), 091103 (2008).
[Crossref]

Gardner, H.

C. D. Pynn, S. J. Kowsz, S. H. Oh, H. Gardner, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy,” Appl. Phys. Lett. 109(4), 041107 (2016).
[Crossref]

Gault, B.

F. Vurpillot, B. Gault, B. P. Geiser, and D. J. Larson, “Reconstructing atom probe data: A review,” Ultramicroscopy 132, 19–30 (2013).
[Crossref] [PubMed]

Geiser, B. P.

F. Vurpillot, B. Gault, B. P. Geiser, and D. J. Larson, “Reconstructing atom probe data: A review,” Ultramicroscopy 132, 19–30 (2013).
[Crossref] [PubMed]

Gorman, B.

K. Thompson, D. Lawrence, D. J. Larson, J. D. Olson, T. F. Kelly, and B. Gorman, “In situ site-specific specimen preparation for atom probe tomography,” Ultramicroscopy 107(2-3), 131–139 (2007).
[Crossref] [PubMed]

Hirasawa, H.

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m-plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi., A Appl. Mater. Sci. 205(5), 1203–1206 (2008).
[Crossref]

Hsu, P. S.

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, and J. S. Speck, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Huang, C. Y.

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, and J. S. Speck, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, and S. P. DenBaars, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 51109 (2011).
[Crossref]

Huang, S. C.

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, and J. S. Speck, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Hwang, D.

D. Hwang, A. J. Mughal, M. S. Wong, A. I. Alhassan, S. Nakamura, and S. P. DenBaars, “Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs,” Appl. Phys. Express 11(1), 012102 (2018).
[Crossref]

M. S. Wong, D. Hwang, A. I. Alhassan, C. Lee, R. Ley, S. Nakamura, and S. P. DenBaars, “High Efficiency of III-Nitride Micro-Light-Emitting Diodes by Sidewall Passivation Using Atomic Layer Deposition,” Opt. Express 26(16), 21324–21331 (2018).
[Crossref] [PubMed]

D. Hwang, A. Mughal, C. D. Pynn, S. Nakamura, and S. P. DenBaars, “Sustained high external quantum efficiency in ultrasmall blue III-nitride micro-LEDs,” Appl. Phys. Express 10(3), 032101 (2017).
[Crossref]

Iso, K.

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m-plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi., A Appl. Mater. Sci. 205(5), 1203–1206 (2008).
[Crossref]

Jiang, H. X.

J. Day, J. Li, D. Y. C. Lie, C. Bradford, J. Y. Lin, and H. X. Jiang, “III-Nitride full-scale high-resolution microdisplays,” Appl. Phys. Lett. 99(3), 031116 (2011).
[Crossref]

Kappei, L.

P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux, and J. Zuniga‐Perez, “Green emission from semipolar InGaN quantum wells grown on low-defect (11-22) GaN templates fabricated on patterned r-sapphire,” Phys. Status Solidi, B Basic Res. 253(1), 105–111 (2016).
[Crossref]

Kawaguchi, Y.

R. Shivaraman, Y. Kawaguchi, S. Tanaka, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Comparative analysis of (20-21) and (20-2-1) semipolar GaN light emitting diodes using atom probe tomography,” Appl. Phys. Lett. 102(25), 251104 (2013).
[Crossref]

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, and J. S. Speck, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Keller, S.

B. Bonef, M. Catalano, C. Lund, S. P. Denbaars, S. Nakamura, U. K. Mishra, M. J. Kim, and S. Keller, “Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography,” Appl. Phys. Lett. 110(14), 143101 (2017).
[Crossref]

Kelly, T. F.

K. Thompson, D. Lawrence, D. J. Larson, J. D. Olson, T. F. Kelly, and B. Gorman, “In situ site-specific specimen preparation for atom probe tomography,” Ultramicroscopy 107(2-3), 131–139 (2007).
[Crossref] [PubMed]

Khoury, M.

M. Khoury, H. Li, B. Bonef, L. Y. Kuritzky, A. J. Mughal, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Semipolar (20-21) GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations,” Appl. Phys. Express 11(3), 036501 (2018).
[Crossref]

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. A. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref] [PubMed]

Kim, M. J.

B. Bonef, M. Catalano, C. Lund, S. P. Denbaars, S. Nakamura, U. K. Mishra, M. J. Kim, and S. Keller, “Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography,” Appl. Phys. Lett. 110(14), 143101 (2017).
[Crossref]

Kowsz, S. J.

C. D. Pynn, S. J. Kowsz, S. H. Oh, H. Gardner, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy,” Appl. Phys. Lett. 109(4), 041107 (2016).
[Crossref]

Kuritzky, L. Y.

M. Khoury, H. Li, B. Bonef, L. Y. Kuritzky, A. J. Mughal, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Semipolar (20-21) GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations,” Appl. Phys. Express 11(3), 036501 (2018).
[Crossref]

Kymissis, I.

V. W. Lee, N. Twu, and I. Kymissis, “Micro-LED Technologies and Applications frontline technology,” Inf. Disp. 32(6), 16–23 (2016).
[Crossref]

Largeron, C.

F. Olivier, S. Tirano, L. Dupré, B. Aventurier, C. Largeron, and F. Templier, “Influence of size-reduction on the performances of GaN-based micro-LEDs for display application,” J. Lumin. 191, 112–116 (2017).
[Crossref]

Larson, D. J.

F. Vurpillot, B. Gault, B. P. Geiser, and D. J. Larson, “Reconstructing atom probe data: A review,” Ultramicroscopy 132, 19–30 (2013).
[Crossref] [PubMed]

K. Thompson, D. Lawrence, D. J. Larson, J. D. Olson, T. F. Kelly, and B. Gorman, “In situ site-specific specimen preparation for atom probe tomography,” Ultramicroscopy 107(2-3), 131–139 (2007).
[Crossref] [PubMed]

Lawrence, D.

K. Thompson, D. Lawrence, D. J. Larson, J. D. Olson, T. F. Kelly, and B. Gorman, “In situ site-specific specimen preparation for atom probe tomography,” Ultramicroscopy 107(2-3), 131–139 (2007).
[Crossref] [PubMed]

Lee, C.

Lee, V. W.

V. W. Lee, N. Twu, and I. Kymissis, “Micro-LED Technologies and Applications frontline technology,” Inf. Disp. 32(6), 16–23 (2016).
[Crossref]

Leroux, M.

P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux, and J. Zuniga‐Perez, “Green emission from semipolar InGaN quantum wells grown on low-defect (11-22) GaN templates fabricated on patterned r-sapphire,” Phys. Status Solidi, B Basic Res. 253(1), 105–111 (2016).
[Crossref]

Ley, R.

Li, H.

M. Khoury, H. Li, B. Bonef, L. Y. Kuritzky, A. J. Mughal, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Semipolar (20-21) GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations,” Appl. Phys. Express 11(3), 036501 (2018).
[Crossref]

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. A. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref] [PubMed]

Li, H. J.

Li, J.

J. Day, J. Li, D. Y. C. Lie, C. Bradford, J. Y. Lin, and H. X. Jiang, “III-Nitride full-scale high-resolution microdisplays,” Appl. Phys. Lett. 99(3), 031116 (2011).
[Crossref]

Li, P. P.

Li, Z. C.

Liang, M.

Licitra, C.

F. Olivier, A. Daami, C. Licitra, and F. Templier, “Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study,” Appl. Phys. Lett. 111(2), 022104 (2017).
[Crossref]

Lie, D. Y. C.

J. Day, J. Li, D. Y. C. Lie, C. Bradford, J. Y. Lin, and H. X. Jiang, “III-Nitride full-scale high-resolution microdisplays,” Appl. Phys. Lett. 99(3), 031116 (2011).
[Crossref]

Lin, J. Y.

J. Day, J. Li, D. Y. C. Lie, C. Bradford, J. Y. Lin, and H. X. Jiang, “III-Nitride full-scale high-resolution microdisplays,” Appl. Phys. Lett. 99(3), 031116 (2011).
[Crossref]

Lin, Y. D.

A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11-22) InGaN Multiple Quantum Well Laser Diode Structures,” Appl. Phys. Express 1(9), 091103 (2008).
[Crossref]

Lin, Y.-D.

S. E. Brinkley, Y.-D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011).
[Crossref]

Lund, C.

B. Bonef, M. Catalano, C. Lund, S. P. Denbaars, S. Nakamura, U. K. Mishra, M. J. Kim, and S. Keller, “Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography,” Appl. Phys. Lett. 110(14), 143101 (2017).
[Crossref]

Masui, H.

H. Masui, S. Nakamura, S. P. DenBaars, and U. K. Mishra, “Nonpolar and semipolar III-nitride light-emitting diodes: Achievements and challenges,” IEEE Trans. Electron Dev. 57(1), 88–100 (2010).
[Crossref]

N. Fellows, H. Sato, H. Masui, S. P. DenBaars, and S. Nakamura, “Increased polarization ratio on semipolar (11-22) InGaN/GaN light-emitting diodes with increasing indium composition,” Jpn. J. Appl. Phys., 47(10), 7854–7856 (2008).

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m-plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi., A Appl. Mater. Sci. 205(5), 1203–1206 (2008).
[Crossref]

Mishra, U. K.

B. Bonef, M. Catalano, C. Lund, S. P. Denbaars, S. Nakamura, U. K. Mishra, M. J. Kim, and S. Keller, “Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography,” Appl. Phys. Lett. 110(14), 143101 (2017).
[Crossref]

H. Masui, S. Nakamura, S. P. DenBaars, and U. K. Mishra, “Nonpolar and semipolar III-nitride light-emitting diodes: Achievements and challenges,” IEEE Trans. Electron Dev. 57(1), 88–100 (2010).
[Crossref]

Moody, M. P.

M. P. Moody, L. T. Stephenson, A. V. Ceguerra, and S. P. Ringer, “Quantitative binomial distribution analyses of nanoscale like-solute atom clustering and segregation in atom probe tomography data,” Microsc. Res. Tech. 71(7), 542–550 (2008).
[Crossref] [PubMed]

Mughal, A.

D. Hwang, A. Mughal, C. D. Pynn, S. Nakamura, and S. P. DenBaars, “Sustained high external quantum efficiency in ultrasmall blue III-nitride micro-LEDs,” Appl. Phys. Express 10(3), 032101 (2017).
[Crossref]

Mughal, A. J.

D. Hwang, A. J. Mughal, M. S. Wong, A. I. Alhassan, S. Nakamura, and S. P. DenBaars, “Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs,” Appl. Phys. Express 11(1), 012102 (2018).
[Crossref]

M. Khoury, H. Li, B. Bonef, L. Y. Kuritzky, A. J. Mughal, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Semipolar (20-21) GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations,” Appl. Phys. Express 11(3), 036501 (2018).
[Crossref]

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. A. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref] [PubMed]

Nakamura, S.

M. Khoury, H. Li, B. Bonef, L. Y. Kuritzky, A. J. Mughal, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Semipolar (20-21) GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations,” Appl. Phys. Express 11(3), 036501 (2018).
[Crossref]

D. Hwang, A. J. Mughal, M. S. Wong, A. I. Alhassan, S. Nakamura, and S. P. DenBaars, “Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs,” Appl. Phys. Express 11(1), 012102 (2018).
[Crossref]

M. S. Wong, D. Hwang, A. I. Alhassan, C. Lee, R. Ley, S. Nakamura, and S. P. DenBaars, “High Efficiency of III-Nitride Micro-Light-Emitting Diodes by Sidewall Passivation Using Atomic Layer Deposition,” Opt. Express 26(16), 21324–21331 (2018).
[Crossref] [PubMed]

A. I. Alhassan, N. G. Young, R. M. Farrell, C. Pynn, F. Wu, A. Y. Alyamani, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Development of high performance green c-plane III-nitride light-emitting diodes,” Opt. Express 26(5), 5591–5601 (2018).
[Crossref] [PubMed]

D. Hwang, A. Mughal, C. D. Pynn, S. Nakamura, and S. P. DenBaars, “Sustained high external quantum efficiency in ultrasmall blue III-nitride micro-LEDs,” Appl. Phys. Express 10(3), 032101 (2017).
[Crossref]

B. Bonef, M. Catalano, C. Lund, S. P. Denbaars, S. Nakamura, U. K. Mishra, M. J. Kim, and S. Keller, “Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography,” Appl. Phys. Lett. 110(14), 143101 (2017).
[Crossref]

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. A. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref] [PubMed]

C. D. Pynn, S. J. Kowsz, S. H. Oh, H. Gardner, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy,” Appl. Phys. Lett. 109(4), 041107 (2016).
[Crossref]

S. H. Oh, B. P. Yonkee, M. Cantore, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Semipolar III-nitride light-emitting diodes with negligible efficiency droop up to ∼1 W,” Appl. Phys. Express 9(10), 102102 (2016).
[Crossref]

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (30-3-1) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105(17), 171106 (2014).
[Crossref]

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar (20-21) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting,” IEEE/OSA. J. Disp. Technol. 9(4), 190–198 (2013).
[Crossref]

R. Shivaraman, Y. Kawaguchi, S. Tanaka, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Comparative analysis of (20-21) and (20-2-1) semipolar GaN light emitting diodes using atom probe tomography,” Appl. Phys. Lett. 102(25), 251104 (2013).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar (20-2-1) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2,” Appl. Phys. Express 4(8), 82104 (2011).
[Crossref]

S. E. Brinkley, Y.-D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011).
[Crossref]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20-21) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

H. Masui, S. Nakamura, S. P. DenBaars, and U. K. Mishra, “Nonpolar and semipolar III-nitride light-emitting diodes: Achievements and challenges,” IEEE Trans. Electron Dev. 57(1), 88–100 (2010).
[Crossref]

D. F. Feezell, M. C. Schmidt, S. P. DenBaars, and S. Nakamura, “Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes,” MRS Bull. 34(5), 318–323 (2009).
[Crossref]

N. Fellows, H. Sato, H. Masui, S. P. DenBaars, and S. Nakamura, “Increased polarization ratio on semipolar (11-22) InGaN/GaN light-emitting diodes with increasing indium composition,” Jpn. J. Appl. Phys., 47(10), 7854–7856 (2008).

A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11-22) InGaN Multiple Quantum Well Laser Diode Structures,” Appl. Phys. Express 1(9), 091103 (2008).
[Crossref]

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m-plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi., A Appl. Mater. Sci. 205(5), 1203–1206 (2008).
[Crossref]

Oh, S. H.

S. H. Oh, B. P. Yonkee, M. Cantore, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Semipolar III-nitride light-emitting diodes with negligible efficiency droop up to ∼1 W,” Appl. Phys. Express 9(10), 102102 (2016).
[Crossref]

C. D. Pynn, S. J. Kowsz, S. H. Oh, H. Gardner, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy,” Appl. Phys. Lett. 109(4), 041107 (2016).
[Crossref]

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (30-3-1) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105(17), 171106 (2014).
[Crossref]

Olivier, F.

F. Olivier, A. Daami, C. Licitra, and F. Templier, “Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study,” Appl. Phys. Lett. 111(2), 022104 (2017).
[Crossref]

F. Olivier, S. Tirano, L. Dupré, B. Aventurier, C. Largeron, and F. Templier, “Influence of size-reduction on the performances of GaN-based micro-LEDs for display application,” J. Lumin. 191, 112–116 (2017).
[Crossref]

Olson, J. D.

K. Thompson, D. Lawrence, D. J. Larson, J. D. Olson, T. F. Kelly, and B. Gorman, “In situ site-specific specimen preparation for atom probe tomography,” Ultramicroscopy 107(2-3), 131–139 (2007).
[Crossref] [PubMed]

Pan, C. C.

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, and J. S. Speck, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar (20-2-1) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2,” Appl. Phys. Express 4(8), 82104 (2011).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, and S. P. DenBaars, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 51109 (2011).
[Crossref]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20-21) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Pfaff, N.

S. E. Brinkley, Y.-D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011).
[Crossref]

Pynn, C.

Pynn, C. D.

D. Hwang, A. Mughal, C. D. Pynn, S. Nakamura, and S. P. DenBaars, “Sustained high external quantum efficiency in ultrasmall blue III-nitride micro-LEDs,” Appl. Phys. Express 10(3), 032101 (2017).
[Crossref]

C. D. Pynn, S. J. Kowsz, S. H. Oh, H. Gardner, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy,” Appl. Phys. Lett. 109(4), 041107 (2016).
[Crossref]

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (30-3-1) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105(17), 171106 (2014).
[Crossref]

Ringer, S. P.

M. P. Moody, L. T. Stephenson, A. V. Ceguerra, and S. P. Ringer, “Quantitative binomial distribution analyses of nanoscale like-solute atom clustering and segregation in atom probe tomography data,” Microsc. Res. Tech. 71(7), 542–550 (2008).
[Crossref] [PubMed]

Saito, M.

A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11-22) InGaN Multiple Quantum Well Laser Diode Structures,” Appl. Phys. Express 1(9), 091103 (2008).
[Crossref]

Samsudin, M. E. A.

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. A. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref] [PubMed]

Sato, H.

N. Fellows, H. Sato, H. Masui, S. P. DenBaars, and S. Nakamura, “Increased polarization ratio on semipolar (11-22) InGaN/GaN light-emitting diodes with increasing indium composition,” Jpn. J. Appl. Phys., 47(10), 7854–7856 (2008).

Schmidt, M. C.

D. F. Feezell, M. C. Schmidt, S. P. DenBaars, and S. Nakamura, “Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes,” MRS Bull. 34(5), 318–323 (2009).
[Crossref]

Shivaraman, R.

R. Shivaraman, Y. Kawaguchi, S. Tanaka, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Comparative analysis of (20-21) and (20-2-1) semipolar GaN light emitting diodes using atom probe tomography,” Appl. Phys. Lett. 102(25), 251104 (2013).
[Crossref]

Sonoda, J.

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20-21) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Speck, J. S.

M. Khoury, H. Li, B. Bonef, L. Y. Kuritzky, A. J. Mughal, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Semipolar (20-21) GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations,” Appl. Phys. Express 11(3), 036501 (2018).
[Crossref]

A. I. Alhassan, N. G. Young, R. M. Farrell, C. Pynn, F. Wu, A. Y. Alyamani, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Development of high performance green c-plane III-nitride light-emitting diodes,” Opt. Express 26(5), 5591–5601 (2018).
[Crossref] [PubMed]

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. A. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref] [PubMed]

C. D. Pynn, S. J. Kowsz, S. H. Oh, H. Gardner, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy,” Appl. Phys. Lett. 109(4), 041107 (2016).
[Crossref]

S. H. Oh, B. P. Yonkee, M. Cantore, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Semipolar III-nitride light-emitting diodes with negligible efficiency droop up to ∼1 W,” Appl. Phys. Express 9(10), 102102 (2016).
[Crossref]

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar (20-21) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting,” IEEE/OSA. J. Disp. Technol. 9(4), 190–198 (2013).
[Crossref]

R. Shivaraman, Y. Kawaguchi, S. Tanaka, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Comparative analysis of (20-21) and (20-2-1) semipolar GaN light emitting diodes using atom probe tomography,” Appl. Phys. Lett. 102(25), 251104 (2013).
[Crossref]

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, and J. S. Speck, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar (20-2-1) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2,” Appl. Phys. Express 4(8), 82104 (2011).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, and S. P. DenBaars, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 51109 (2011).
[Crossref]

S. E. Brinkley, Y.-D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011).
[Crossref]

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m-plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi., A Appl. Mater. Sci. 205(5), 1203–1206 (2008).
[Crossref]

A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11-22) InGaN Multiple Quantum Well Laser Diode Structures,” Appl. Phys. Express 1(9), 091103 (2008).
[Crossref]

Stephenson, L. T.

M. P. Moody, L. T. Stephenson, A. V. Ceguerra, and S. P. Ringer, “Quantitative binomial distribution analyses of nanoscale like-solute atom clustering and segregation in atom probe tomography data,” Microsc. Res. Tech. 71(7), 542–550 (2008).
[Crossref] [PubMed]

Tanaka, S.

R. Shivaraman, Y. Kawaguchi, S. Tanaka, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Comparative analysis of (20-21) and (20-2-1) semipolar GaN light emitting diodes using atom probe tomography,” Appl. Phys. Lett. 102(25), 251104 (2013).
[Crossref]

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, and J. S. Speck, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar (20-2-1) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2,” Appl. Phys. Express 4(8), 82104 (2011).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, and S. P. DenBaars, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 51109 (2011).
[Crossref]

Teisseire, M.

F. Tendille, P. De Mierry, P. Vennéguès, S. Chenot, and M. Teisseire, “Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults,” J. Cryst. Growth 404(15), 177–183 (2014).
[Crossref]

Templier, F.

F. Olivier, S. Tirano, L. Dupré, B. Aventurier, C. Largeron, and F. Templier, “Influence of size-reduction on the performances of GaN-based micro-LEDs for display application,” J. Lumin. 191, 112–116 (2017).
[Crossref]

F. Olivier, A. Daami, C. Licitra, and F. Templier, “Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study,” Appl. Phys. Lett. 111(2), 022104 (2017).
[Crossref]

Tendille, F.

P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux, and J. Zuniga‐Perez, “Green emission from semipolar InGaN quantum wells grown on low-defect (11-22) GaN templates fabricated on patterned r-sapphire,” Phys. Status Solidi, B Basic Res. 253(1), 105–111 (2016).
[Crossref]

F. Tendille, P. De Mierry, P. Vennéguès, S. Chenot, and M. Teisseire, “Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults,” J. Cryst. Growth 404(15), 177–183 (2014).
[Crossref]

Thompson, G. B.

K. L. Torres, M. Daniil, M. A. Willard, and G. B. Thompson, “The influence of voxel size on atom probe tomography data,” Ultramicroscopy 111(6), 464–468 (2011).
[Crossref] [PubMed]

Thompson, K.

K. Thompson, D. Lawrence, D. J. Larson, J. D. Olson, T. F. Kelly, and B. Gorman, “In situ site-specific specimen preparation for atom probe tomography,” Ultramicroscopy 107(2-3), 131–139 (2007).
[Crossref] [PubMed]

Tirano, S.

F. Olivier, S. Tirano, L. Dupré, B. Aventurier, C. Largeron, and F. Templier, “Influence of size-reduction on the performances of GaN-based micro-LEDs for display application,” J. Lumin. 191, 112–116 (2017).
[Crossref]

Torres, K. L.

K. L. Torres, M. Daniil, M. A. Willard, and G. B. Thompson, “The influence of voxel size on atom probe tomography data,” Ultramicroscopy 111(6), 464–468 (2011).
[Crossref] [PubMed]

Twu, N.

V. W. Lee, N. Twu, and I. Kymissis, “Micro-LED Technologies and Applications frontline technology,” Inf. Disp. 32(6), 16–23 (2016).
[Crossref]

Tyagi, A.

A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11-22) InGaN Multiple Quantum Well Laser Diode Structures,” Appl. Phys. Express 1(9), 091103 (2008).
[Crossref]

Van de Walle, C. G.

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, and J. S. Speck, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, and S. P. DenBaars, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 51109 (2011).
[Crossref]

Vennéguès, P.

P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux, and J. Zuniga‐Perez, “Green emission from semipolar InGaN quantum wells grown on low-defect (11-22) GaN templates fabricated on patterned r-sapphire,” Phys. Status Solidi, B Basic Res. 253(1), 105–111 (2016).
[Crossref]

F. Tendille, P. De Mierry, P. Vennéguès, S. Chenot, and M. Teisseire, “Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults,” J. Cryst. Growth 404(15), 177–183 (2014).
[Crossref]

Vurpillot, F.

F. Vurpillot, B. Gault, B. P. Geiser, and D. J. Larson, “Reconstructing atom probe data: A review,” Ultramicroscopy 132, 19–30 (2013).
[Crossref] [PubMed]

Wang, G. H.

Wang, L. C.

Willard, M. A.

K. L. Torres, M. Daniil, M. A. Willard, and G. B. Thompson, “The influence of voxel size on atom probe tomography data,” Ultramicroscopy 111(6), 464–468 (2011).
[Crossref] [PubMed]

Wong, M. S.

M. S. Wong, D. Hwang, A. I. Alhassan, C. Lee, R. Ley, S. Nakamura, and S. P. DenBaars, “High Efficiency of III-Nitride Micro-Light-Emitting Diodes by Sidewall Passivation Using Atomic Layer Deposition,” Opt. Express 26(16), 21324–21331 (2018).
[Crossref] [PubMed]

D. Hwang, A. J. Mughal, M. S. Wong, A. I. Alhassan, S. Nakamura, and S. P. DenBaars, “Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs,” Appl. Phys. Express 11(1), 012102 (2018).
[Crossref]

Wu, F.

Yamada, H.

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m-plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi., A Appl. Mater. Sci. 205(5), 1203–1206 (2008).
[Crossref]

Yamamoto, S.

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20-21) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Yan, Q.

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, and J. S. Speck, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, and S. P. DenBaars, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 51109 (2011).
[Crossref]

Yi, X. Y.

Yonkee, B. P.

S. H. Oh, B. P. Yonkee, M. Cantore, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Semipolar III-nitride light-emitting diodes with negligible efficiency droop up to ∼1 W,” Appl. Phys. Express 9(10), 102102 (2016).
[Crossref]

Young, N. G.

Zhang, Y. Y.

Zhang, Z. H.

Zhao, Y.

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (30-3-1) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105(17), 171106 (2014).
[Crossref]

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, and J. S. Speck, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar (20-2-1) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2,” Appl. Phys. Express 4(8), 82104 (2011).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, and S. P. DenBaars, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 51109 (2011).
[Crossref]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20-21) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Zhao, Y. B.

Zuniga-Perez, J.

P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux, and J. Zuniga‐Perez, “Green emission from semipolar InGaN quantum wells grown on low-defect (11-22) GaN templates fabricated on patterned r-sapphire,” Phys. Status Solidi, B Basic Res. 253(1), 105–111 (2016).
[Crossref]

ACS Appl. Mater. Interfaces (1)

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. A. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates,” ACS Appl. Mater. Interfaces 9(41), 36417–36422 (2017).
[Crossref] [PubMed]

Appl. Phys. Express (7)

S. H. Oh, B. P. Yonkee, M. Cantore, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Semipolar III-nitride light-emitting diodes with negligible efficiency droop up to ∼1 W,” Appl. Phys. Express 9(10), 102102 (2016).
[Crossref]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20-21) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar (20-2-1) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2,” Appl. Phys. Express 4(8), 82104 (2011).
[Crossref]

M. Khoury, H. Li, B. Bonef, L. Y. Kuritzky, A. J. Mughal, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Semipolar (20-21) GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations,” Appl. Phys. Express 11(3), 036501 (2018).
[Crossref]

A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11-22) InGaN Multiple Quantum Well Laser Diode Structures,” Appl. Phys. Express 1(9), 091103 (2008).
[Crossref]

D. Hwang, A. Mughal, C. D. Pynn, S. Nakamura, and S. P. DenBaars, “Sustained high external quantum efficiency in ultrasmall blue III-nitride micro-LEDs,” Appl. Phys. Express 10(3), 032101 (2017).
[Crossref]

D. Hwang, A. J. Mughal, M. S. Wong, A. I. Alhassan, S. Nakamura, and S. P. DenBaars, “Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs,” Appl. Phys. Express 11(1), 012102 (2018).
[Crossref]

Appl. Phys. Lett. (9)

S. E. Brinkley, Y.-D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, and S. P. DenBaars, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 99(5), 51109 (2011).
[Crossref]

F. Olivier, A. Daami, C. Licitra, and F. Templier, “Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study,” Appl. Phys. Lett. 111(2), 022104 (2017).
[Crossref]

J. Day, J. Li, D. Y. C. Lie, C. Bradford, J. Y. Lin, and H. X. Jiang, “III-Nitride full-scale high-resolution microdisplays,” Appl. Phys. Lett. 99(3), 031116 (2011).
[Crossref]

B. Bonef, M. Catalano, C. Lund, S. P. Denbaars, S. Nakamura, U. K. Mishra, M. J. Kim, and S. Keller, “Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography,” Appl. Phys. Lett. 110(14), 143101 (2017).
[Crossref]

C. D. Pynn, S. J. Kowsz, S. H. Oh, H. Gardner, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy,” Appl. Phys. Lett. 109(4), 041107 (2016).
[Crossref]

R. Shivaraman, Y. Kawaguchi, S. Tanaka, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Comparative analysis of (20-21) and (20-2-1) semipolar GaN light emitting diodes using atom probe tomography,” Appl. Phys. Lett. 102(25), 251104 (2013).
[Crossref]

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (30-3-1) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105(17), 171106 (2014).
[Crossref]

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, and J. S. Speck, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

IEEE Trans. Electron Dev. (1)

H. Masui, S. Nakamura, S. P. DenBaars, and U. K. Mishra, “Nonpolar and semipolar III-nitride light-emitting diodes: Achievements and challenges,” IEEE Trans. Electron Dev. 57(1), 88–100 (2010).
[Crossref]

IEEE/OSA. J. Disp. Technol. (1)

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar (20-21) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting,” IEEE/OSA. J. Disp. Technol. 9(4), 190–198 (2013).
[Crossref]

Inf. Disp. (1)

V. W. Lee, N. Twu, and I. Kymissis, “Micro-LED Technologies and Applications frontline technology,” Inf. Disp. 32(6), 16–23 (2016).
[Crossref]

J. Cryst. Growth (1)

F. Tendille, P. De Mierry, P. Vennéguès, S. Chenot, and M. Teisseire, “Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults,” J. Cryst. Growth 404(15), 177–183 (2014).
[Crossref]

J. Lumin. (1)

F. Olivier, S. Tirano, L. Dupré, B. Aventurier, C. Largeron, and F. Templier, “Influence of size-reduction on the performances of GaN-based micro-LEDs for display application,” J. Lumin. 191, 112–116 (2017).
[Crossref]

Jpn. J. Appl. Phys. (1)

N. Fellows, H. Sato, H. Masui, S. P. DenBaars, and S. Nakamura, “Increased polarization ratio on semipolar (11-22) InGaN/GaN light-emitting diodes with increasing indium composition,” Jpn. J. Appl. Phys., 47(10), 7854–7856 (2008).

Microsc. Res. Tech. (1)

M. P. Moody, L. T. Stephenson, A. V. Ceguerra, and S. P. Ringer, “Quantitative binomial distribution analyses of nanoscale like-solute atom clustering and segregation in atom probe tomography data,” Microsc. Res. Tech. 71(7), 542–550 (2008).
[Crossref] [PubMed]

MRS Bull. (1)

D. F. Feezell, M. C. Schmidt, S. P. DenBaars, and S. Nakamura, “Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes,” MRS Bull. 34(5), 318–323 (2009).
[Crossref]

Opt. Express (3)

Phys. Status Solidi, B Basic Res. (1)

P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux, and J. Zuniga‐Perez, “Green emission from semipolar InGaN quantum wells grown on low-defect (11-22) GaN templates fabricated on patterned r-sapphire,” Phys. Status Solidi, B Basic Res. 253(1), 105–111 (2016).
[Crossref]

Phys. Status Solidi., A Appl. Mater. Sci. (1)

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Optical polarization of m-plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi., A Appl. Mater. Sci. 205(5), 1203–1206 (2008).
[Crossref]

Ultramicroscopy (3)

K. L. Torres, M. Daniil, M. A. Willard, and G. B. Thompson, “The influence of voxel size on atom probe tomography data,” Ultramicroscopy 111(6), 464–468 (2011).
[Crossref] [PubMed]

K. Thompson, D. Lawrence, D. J. Larson, J. D. Olson, T. F. Kelly, and B. Gorman, “In situ site-specific specimen preparation for atom probe tomography,” Ultramicroscopy 107(2-3), 131–139 (2007).
[Crossref] [PubMed]

F. Vurpillot, B. Gault, B. P. Geiser, and D. J. Larson, “Reconstructing atom probe data: A review,” Ultramicroscopy 132, 19–30 (2013).
[Crossref] [PubMed]

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Figures (5)

Fig. 1
Fig. 1 (a) 2 × 2 μm2 AFM image of the semipolar (11-22) GaN/sapphire template and (b) Schematic image of the epitaxial structure and µLEDs design.
Fig. 2
Fig. 2 (a) APT 3D volume extracted in the center of the global tip reconstruction showing the AlGaN EBL layer, the three InGaN/GaN MQWs and the top part of the InGaN buffer layer. (b) 1D concentration profile extracted from the APT reconstruction in (a) along the [11–22] direction. The sampling volume dimension is 30 × 30 × 60 nm3 and the sampling step is 0.1 nm.
Fig. 3
Fig. 3 (a) 2D In concentration map in the second QW and (b) Distribution of bin compositions of In and comparison with the binomial distribution for the case of random alloy.
Fig. 4
Fig. 4 (a) Forward current density-voltage characteristics of µLEDs with different sizes. The inset are the reverse characteristics. (b) EQE versus current density for different size µLEDs. The inset are the lumious image of 40 × 40 and 80 × 80 µm2.
Fig. 5
Fig. 5 (a) Blueshift in wavelength comparison between the semipolar (11-22) green µLEDs and c-plane green LED and (b) Polarization ratio of the semipolar (11-22) µLED with a size of 100 × 100 µm2 at various current densities.

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