Abstract

We successfully demonstrated an electrically injected blue(202¯1¯)semipolar vertical-cavity surface-emitting laser with a 5λ cavity length, an ion implanted aperture, and a dual dielectric DBR design. The peak power under pulsed operation was 1.85 mW, the threshold current was 4.6 kA/cm2, and the differential efficiency was 2.4% for the mode at 445 nm of a device with a 12 µm aperture. Lasing was achieved up to a 50% duty cycle and the thermal impedance was estimated to be 1800 K/W. The lasing emission was found to be 100% plane polarized along the a-direction.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref] [PubMed]
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    [Crossref]
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    [Crossref]

2019 (6)

M. Kuramoto, S. Kobayashi, T. Akagi, K. Tazawa, K. Tanaka, T. Saito, and T. Takeuchi, “High-Power GaN-Based Vertical-Cavity Surface-Emitting Lasers with AlInN/GaN Distributed Bragg Reflectors,” Appl. Sci. (Basel) 9(3), 416 (2019).
[Crossref]

T. Hamaguchi, H. Nakajima, M. Tanaka, M. Ito, M. Ohara, T. Jyoukawa, N. Kobayashi, T. Matou, K. Hayashi, H. Watanabe, R. Koda, and K. Yanashima, “Sub-milliampere-threshold continuous wave operation of GaN-based vertical-cavity surface-emitting laser with lateral optical confinement by curved mirror,” Appl. Phys. Express 12(4), 044004 (2019).
[Crossref]

S. M. Mishkat-Ul-Masabih, A. A. Aragon, M. Monavarian, T. S. Luk, and D. F. Feezell, “Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors,” Appl. Phys. Express 12(3), 036504 (2019).
[Crossref]

A. S. Abbas, A. Y. Alyamani, S. Nakamura, and S. P. Dembaars, “Enhancement of n-type GaN(202¯1),” Appl. Phys. Express 12(3), 036503 (2019).
[Crossref]

D. L. Becerra, D. A. Cohen, S. Mehari, S. P. DenBaars, and S. Nakamura, “Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization,” J. Cryst. Growth 507, 118–123 (2019).
[Crossref]

W. Muranaga, T. Akagi, R. Fuwa, S. Yoshida, J. Ogimoto, Y. Akatsuka, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “GaN-based vertical-cavity surface-emitting lasers using n-type conductive AlInN/GaN bottom distributed Bragg reflectors with graded interfaces,” Jpn. J. Appl. Phys. 58(SC), SCCC01 (2019).
[Crossref]

2018 (3)

N. Hayashi, J. Ogimoto, K. Matsui, T. Furuta, T. Akagi, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “A GaN-Based VCSEL with a Convex Structure for Optical Guiding,” Phys. Status Solidi 215(10), 1700648 (2018).
[Crossref]

T. Hamaguchi, M. Tanaka, J. Mitomo, H. Nakajima, M. Ito, M. Ohara, N. Kobayashi, K. Fujii, H. Watanabe, S. Satou, R. Koda, and H. Narui, “Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror,” Sci. Rep. 8(1), 10350 (2018).
[Crossref] [PubMed]

C. A. Forman, S. Lee, E. C. Young, J. A. Kearns, D. A. Cohen, J. T. Leonard, T. Margalith, S. P. DenBaars, and S. Nakamura, “Continuous-wave operation of m -plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact,” Appl. Phys. Lett. 112(11), 111106 (2018).
[Crossref]

2016 (5)

B. Leung, D. Wang, Y.-S. Kuo, and J. Han, “Complete orientational access for semipolar GaN devices on sapphire,” Phys. Status Solidi 253(1), 23–35 (2016).
[Crossref]

P. S. Yeh, C.-C. Chang, Y.-T. Chen, D.-W. Lin, J.-S. Liou, C. C. Wu, J. H. He, and H.-C. Kuo, “GaN-based vertical-cavity surface emitting lasers with sub-milliamp threshold and small divergence angle,” Appl. Phys. Lett. 109(24), 241103 (2016).
[Crossref]

J. T. Leonard, B. P. Yonkee, D. A. Cohen, L. Megalini, S. Lee, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture,” Appl. Phys. Lett. 108(3), 031111 (2016).
[Crossref]

T. Hamaguchi, N. Fuutagawa, S. Izumi, M. Murayama, and H. Narui, “Continuous wave operation of high power GaN-based blue vertical-cavity surface-emitting lasers using epitaxial lateral overgrowth,” Proc. SPIE 9748, 974817 (2016).
[Crossref]

R. P. Sarzała, K. Pijanowski, M. Gębski, M. Marciniak, and W. Nakwaski, “Designing of TJ VCSEL based on nitride materials,” Proc. SPIE 10159, 1015908 (2016).
[Crossref]

2015 (4)

J. T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts,” J. Appl. Phys. 118(14), 145304 (2015).
[Crossref]

W. J. Liu, X. L. Hu, L. Y. Ying, S. Q. Chen, J. Y. Zhang, H. Akiyama, Z. P. Cai, and B. P. Zhang, “On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers,” Sci. Rep. 5(1), 9600 (2015).
[Crossref] [PubMed]

J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, T. Margalith, S. Lee, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture,” Appl. Phys. Lett. 107(1), 011102 (2015).
[Crossref]

2014 (2)

M. Kawaguchi, O. Imafuji, K. Nagamatsu, K. Yamanaka, S. Takigawa, and T. Katayama, “Design and lasing characteristics of GaN vertical elongated cavity surface emitting lasers,” Proc. SPIE 8986, 89861K (2014).
[Crossref]

C. O. Holder, J. T. Leonard, R. M. Farrell, D. A. Cohen, B. Yonkee, J. S. Speck, S. P. Denbaars, S. Nakamura, and D. F. Feezell, “Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching,” Appl. Phys. Lett. 105(3), 1–6 (2014).
[Crossref]

2012 (2)

C. Holder, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers,” Appl. Phys. Express 5(9), 092104 (2012).
[Crossref]

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

2011 (3)

D. Kasahara, D. Morita, T. Kosugi, K. Nakagawa, J. Kawamata, Y. Higuchi, H. Matsumura, and T. Mukai, “Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature,” Appl. Phys. Express 4(7), 072103 (2011).
[Crossref]

L. Schade, U. T. Schwarz, T. Wernicke, M. Weyers, and M. Kneissl, “Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells,” Phys. Status Solidi 248(3), 638–646 (2011).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯),” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

2010 (2)

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar(202¯1),” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

2009 (1)

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar(202¯1),” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

2008 (1)

Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai, “Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection,” Appl. Phys. Express 1, 121102 (2008).
[Crossref]

2007 (1)

S.-H. Park and D. Ahn, “Depolarization effects in(112¯2), ” Appl. Phys. Lett. 90(1), 013505 (2007).
[Crossref]

1974 (1)

P. Johnson and R. Christy, “Optical constants of transition metals: Ti, V, Cr, Mn, Fe, Co, Ni, and Pd,” Phys. Rev. B 9(12), 5056–5070 (1974).
[Crossref]

1972 (1)

P. B. Johnson and R. W. Christy, “Optical Constants of the Noble Metals,” Phys. Rev. B 6(12), 4370–4379 (1972).
[Crossref]

Abbas, A. S.

A. S. Abbas, A. Y. Alyamani, S. Nakamura, and S. P. Dembaars, “Enhancement of n-type GaN(202¯1),” Appl. Phys. Express 12(3), 036503 (2019).
[Crossref]

Adachi, M.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar(202¯1),” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Ahn, D.

S.-H. Park and D. Ahn, “Depolarization effects in(112¯2), ” Appl. Phys. Lett. 90(1), 013505 (2007).
[Crossref]

Akagi, T.

M. Kuramoto, S. Kobayashi, T. Akagi, K. Tazawa, K. Tanaka, T. Saito, and T. Takeuchi, “High-Power GaN-Based Vertical-Cavity Surface-Emitting Lasers with AlInN/GaN Distributed Bragg Reflectors,” Appl. Sci. (Basel) 9(3), 416 (2019).
[Crossref]

W. Muranaga, T. Akagi, R. Fuwa, S. Yoshida, J. Ogimoto, Y. Akatsuka, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “GaN-based vertical-cavity surface-emitting lasers using n-type conductive AlInN/GaN bottom distributed Bragg reflectors with graded interfaces,” Jpn. J. Appl. Phys. 58(SC), SCCC01 (2019).
[Crossref]

N. Hayashi, J. Ogimoto, K. Matsui, T. Furuta, T. Akagi, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “A GaN-Based VCSEL with a Convex Structure for Optical Guiding,” Phys. Status Solidi 215(10), 1700648 (2018).
[Crossref]

Akasaki, I.

W. Muranaga, T. Akagi, R. Fuwa, S. Yoshida, J. Ogimoto, Y. Akatsuka, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “GaN-based vertical-cavity surface-emitting lasers using n-type conductive AlInN/GaN bottom distributed Bragg reflectors with graded interfaces,” Jpn. J. Appl. Phys. 58(SC), SCCC01 (2019).
[Crossref]

N. Hayashi, J. Ogimoto, K. Matsui, T. Furuta, T. Akagi, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “A GaN-Based VCSEL with a Convex Structure for Optical Guiding,” Phys. Status Solidi 215(10), 1700648 (2018).
[Crossref]

Akatsuka, Y.

W. Muranaga, T. Akagi, R. Fuwa, S. Yoshida, J. Ogimoto, Y. Akatsuka, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “GaN-based vertical-cavity surface-emitting lasers using n-type conductive AlInN/GaN bottom distributed Bragg reflectors with graded interfaces,” Jpn. J. Appl. Phys. 58(SC), SCCC01 (2019).
[Crossref]

Akita, K.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar(202¯1),” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Akiyama, H.

W. J. Liu, X. L. Hu, L. Y. Ying, S. Q. Chen, J. Y. Zhang, H. Akiyama, Z. P. Cai, and B. P. Zhang, “On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers,” Sci. Rep. 5(1), 9600 (2015).
[Crossref] [PubMed]

Alyamani, A. Y.

A. S. Abbas, A. Y. Alyamani, S. Nakamura, and S. P. Dembaars, “Enhancement of n-type GaN(202¯1),” Appl. Phys. Express 12(3), 036503 (2019).
[Crossref]

Aragon, A. A.

S. M. Mishkat-Ul-Masabih, A. A. Aragon, M. Monavarian, T. S. Luk, and D. F. Feezell, “Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors,” Appl. Phys. Express 12(3), 036504 (2019).
[Crossref]

Becerra, D. L.

D. L. Becerra, D. A. Cohen, S. Mehari, S. P. DenBaars, and S. Nakamura, “Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization,” J. Cryst. Growth 507, 118–123 (2019).
[Crossref]

Cai, Z. P.

W. J. Liu, X. L. Hu, L. Y. Ying, S. Q. Chen, J. Y. Zhang, H. Akiyama, Z. P. Cai, and B. P. Zhang, “On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers,” Sci. Rep. 5(1), 9600 (2015).
[Crossref] [PubMed]

Chang, C.-C.

P. S. Yeh, C.-C. Chang, Y.-T. Chen, D.-W. Lin, J.-S. Liou, C. C. Wu, J. H. He, and H.-C. Kuo, “GaN-based vertical-cavity surface emitting lasers with sub-milliamp threshold and small divergence angle,” Appl. Phys. Lett. 109(24), 241103 (2016).
[Crossref]

Chen, S. Q.

W. J. Liu, X. L. Hu, L. Y. Ying, S. Q. Chen, J. Y. Zhang, H. Akiyama, Z. P. Cai, and B. P. Zhang, “On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers,” Sci. Rep. 5(1), 9600 (2015).
[Crossref] [PubMed]

Chen, Y.-T.

P. S. Yeh, C.-C. Chang, Y.-T. Chen, D.-W. Lin, J.-S. Liou, C. C. Wu, J. H. He, and H.-C. Kuo, “GaN-based vertical-cavity surface emitting lasers with sub-milliamp threshold and small divergence angle,” Appl. Phys. Lett. 109(24), 241103 (2016).
[Crossref]

Christy, R.

P. Johnson and R. Christy, “Optical constants of transition metals: Ti, V, Cr, Mn, Fe, Co, Ni, and Pd,” Phys. Rev. B 9(12), 5056–5070 (1974).
[Crossref]

Christy, R. W.

P. B. Johnson and R. W. Christy, “Optical Constants of the Noble Metals,” Phys. Rev. B 6(12), 4370–4379 (1972).
[Crossref]

Chung, R. B.

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯),” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar(202¯1),” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Cohen, D. A.

D. L. Becerra, D. A. Cohen, S. Mehari, S. P. DenBaars, and S. Nakamura, “Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization,” J. Cryst. Growth 507, 118–123 (2019).
[Crossref]

C. A. Forman, S. Lee, E. C. Young, J. A. Kearns, D. A. Cohen, J. T. Leonard, T. Margalith, S. P. DenBaars, and S. Nakamura, “Continuous-wave operation of m -plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact,” Appl. Phys. Lett. 112(11), 111106 (2018).
[Crossref]

J. T. Leonard, B. P. Yonkee, D. A. Cohen, L. Megalini, S. Lee, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture,” Appl. Phys. Lett. 108(3), 031111 (2016).
[Crossref]

J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, T. Margalith, S. Lee, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture,” Appl. Phys. Lett. 107(1), 011102 (2015).
[Crossref]

J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts,” J. Appl. Phys. 118(14), 145304 (2015).
[Crossref]

J. T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

C. O. Holder, J. T. Leonard, R. M. Farrell, D. A. Cohen, B. Yonkee, J. S. Speck, S. P. Denbaars, S. Nakamura, and D. F. Feezell, “Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching,” Appl. Phys. Lett. 105(3), 1–6 (2014).
[Crossref]

Dembaars, S. P.

A. S. Abbas, A. Y. Alyamani, S. Nakamura, and S. P. Dembaars, “Enhancement of n-type GaN(202¯1),” Appl. Phys. Express 12(3), 036503 (2019).
[Crossref]

DenBaars, S. P.

D. L. Becerra, D. A. Cohen, S. Mehari, S. P. DenBaars, and S. Nakamura, “Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization,” J. Cryst. Growth 507, 118–123 (2019).
[Crossref]

C. A. Forman, S. Lee, E. C. Young, J. A. Kearns, D. A. Cohen, J. T. Leonard, T. Margalith, S. P. DenBaars, and S. Nakamura, “Continuous-wave operation of m -plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact,” Appl. Phys. Lett. 112(11), 111106 (2018).
[Crossref]

J. T. Leonard, B. P. Yonkee, D. A. Cohen, L. Megalini, S. Lee, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture,” Appl. Phys. Lett. 108(3), 031111 (2016).
[Crossref]

J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, T. Margalith, S. Lee, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture,” Appl. Phys. Lett. 107(1), 011102 (2015).
[Crossref]

J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts,” J. Appl. Phys. 118(14), 145304 (2015).
[Crossref]

J. T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

C. O. Holder, J. T. Leonard, R. M. Farrell, D. A. Cohen, B. Yonkee, J. S. Speck, S. P. Denbaars, S. Nakamura, and D. F. Feezell, “Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching,” Appl. Phys. Lett. 105(3), 1–6 (2014).
[Crossref]

C. Holder, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers,” Appl. Phys. Express 5(9), 092104 (2012).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯),” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar(202¯1),” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

Enya, Y.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar(202¯1),” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Farrell, R. M.

J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts,” J. Appl. Phys. 118(14), 145304 (2015).
[Crossref]

J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, T. Margalith, S. Lee, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture,” Appl. Phys. Lett. 107(1), 011102 (2015).
[Crossref]

C. O. Holder, J. T. Leonard, R. M. Farrell, D. A. Cohen, B. Yonkee, J. S. Speck, S. P. Denbaars, S. Nakamura, and D. F. Feezell, “Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching,” Appl. Phys. Lett. 105(3), 1–6 (2014).
[Crossref]

Feezell, D.

C. Holder, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers,” Appl. Phys. Express 5(9), 092104 (2012).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯),” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Feezell, D. F.

S. M. Mishkat-Ul-Masabih, A. A. Aragon, M. Monavarian, T. S. Luk, and D. F. Feezell, “Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors,” Appl. Phys. Express 12(3), 036504 (2019).
[Crossref]

C. O. Holder, J. T. Leonard, R. M. Farrell, D. A. Cohen, B. Yonkee, J. S. Speck, S. P. Denbaars, S. Nakamura, and D. F. Feezell, “Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching,” Appl. Phys. Lett. 105(3), 1–6 (2014).
[Crossref]

Forman, C. A.

C. A. Forman, S. Lee, E. C. Young, J. A. Kearns, D. A. Cohen, J. T. Leonard, T. Margalith, S. P. DenBaars, and S. Nakamura, “Continuous-wave operation of m -plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact,” Appl. Phys. Lett. 112(11), 111106 (2018).
[Crossref]

Fujii, K.

T. Hamaguchi, M. Tanaka, J. Mitomo, H. Nakajima, M. Ito, M. Ohara, N. Kobayashi, K. Fujii, H. Watanabe, S. Satou, R. Koda, and H. Narui, “Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror,” Sci. Rep. 8(1), 10350 (2018).
[Crossref] [PubMed]

Fujito, K.

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯),” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar(202¯1),” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

Furuta, T.

N. Hayashi, J. Ogimoto, K. Matsui, T. Furuta, T. Akagi, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “A GaN-Based VCSEL with a Convex Structure for Optical Guiding,” Phys. Status Solidi 215(10), 1700648 (2018).
[Crossref]

Fuutagawa, N.

T. Hamaguchi, N. Fuutagawa, S. Izumi, M. Murayama, and H. Narui, “Continuous wave operation of high power GaN-based blue vertical-cavity surface-emitting lasers using epitaxial lateral overgrowth,” Proc. SPIE 9748, 974817 (2016).
[Crossref]

Fuwa, R.

W. Muranaga, T. Akagi, R. Fuwa, S. Yoshida, J. Ogimoto, Y. Akatsuka, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “GaN-based vertical-cavity surface-emitting lasers using n-type conductive AlInN/GaN bottom distributed Bragg reflectors with graded interfaces,” Jpn. J. Appl. Phys. 58(SC), SCCC01 (2019).
[Crossref]

Gebski, M.

R. P. Sarzała, K. Pijanowski, M. Gębski, M. Marciniak, and W. Nakwaski, “Designing of TJ VCSEL based on nitride materials,” Proc. SPIE 10159, 1015908 (2016).
[Crossref]

Hamaguchi, T.

T. Hamaguchi, H. Nakajima, M. Tanaka, M. Ito, M. Ohara, T. Jyoukawa, N. Kobayashi, T. Matou, K. Hayashi, H. Watanabe, R. Koda, and K. Yanashima, “Sub-milliampere-threshold continuous wave operation of GaN-based vertical-cavity surface-emitting laser with lateral optical confinement by curved mirror,” Appl. Phys. Express 12(4), 044004 (2019).
[Crossref]

T. Hamaguchi, M. Tanaka, J. Mitomo, H. Nakajima, M. Ito, M. Ohara, N. Kobayashi, K. Fujii, H. Watanabe, S. Satou, R. Koda, and H. Narui, “Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror,” Sci. Rep. 8(1), 10350 (2018).
[Crossref] [PubMed]

T. Hamaguchi, N. Fuutagawa, S. Izumi, M. Murayama, and H. Narui, “Continuous wave operation of high power GaN-based blue vertical-cavity surface-emitting lasers using epitaxial lateral overgrowth,” Proc. SPIE 9748, 974817 (2016).
[Crossref]

Han, J.

B. Leung, D. Wang, Y.-S. Kuo, and J. Han, “Complete orientational access for semipolar GaN devices on sapphire,” Phys. Status Solidi 253(1), 23–35 (2016).
[Crossref]

Hayashi, K.

T. Hamaguchi, H. Nakajima, M. Tanaka, M. Ito, M. Ohara, T. Jyoukawa, N. Kobayashi, T. Matou, K. Hayashi, H. Watanabe, R. Koda, and K. Yanashima, “Sub-milliampere-threshold continuous wave operation of GaN-based vertical-cavity surface-emitting laser with lateral optical confinement by curved mirror,” Appl. Phys. Express 12(4), 044004 (2019).
[Crossref]

Hayashi, N.

N. Hayashi, J. Ogimoto, K. Matsui, T. Furuta, T. Akagi, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “A GaN-Based VCSEL with a Convex Structure for Optical Guiding,” Phys. Status Solidi 215(10), 1700648 (2018).
[Crossref]

He, J. H.

P. S. Yeh, C.-C. Chang, Y.-T. Chen, D.-W. Lin, J.-S. Liou, C. C. Wu, J. H. He, and H.-C. Kuo, “GaN-based vertical-cavity surface emitting lasers with sub-milliamp threshold and small divergence angle,” Appl. Phys. Lett. 109(24), 241103 (2016).
[Crossref]

Higuchi, Y.

D. Kasahara, D. Morita, T. Kosugi, K. Nakagawa, J. Kawamata, Y. Higuchi, H. Matsumura, and T. Mukai, “Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature,” Appl. Phys. Express 4(7), 072103 (2011).
[Crossref]

Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai, “Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection,” Appl. Phys. Express 1, 121102 (2008).
[Crossref]

Hoffmann, V.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

Holder, C.

C. Holder, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers,” Appl. Phys. Express 5(9), 092104 (2012).
[Crossref]

Holder, C. O.

C. O. Holder, J. T. Leonard, R. M. Farrell, D. A. Cohen, B. Yonkee, J. S. Speck, S. P. Denbaars, S. Nakamura, and D. F. Feezell, “Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching,” Appl. Phys. Lett. 105(3), 1–6 (2014).
[Crossref]

Hsiung, C.-L.

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

Hu, X. L.

W. J. Liu, X. L. Hu, L. Y. Ying, S. Q. Chen, J. Y. Zhang, H. Akiyama, Z. P. Cai, and B. P. Zhang, “On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers,” Sci. Rep. 5(1), 9600 (2015).
[Crossref] [PubMed]

Huang, C.-Y.

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯),” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

Ikegami, T.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar(202¯1),” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Imafuji, O.

M. Kawaguchi, O. Imafuji, K. Nagamatsu, K. Yamanaka, S. Takigawa, and T. Katayama, “Design and lasing characteristics of GaN vertical elongated cavity surface emitting lasers,” Proc. SPIE 8986, 89861K (2014).
[Crossref]

Ito, M.

T. Hamaguchi, H. Nakajima, M. Tanaka, M. Ito, M. Ohara, T. Jyoukawa, N. Kobayashi, T. Matou, K. Hayashi, H. Watanabe, R. Koda, and K. Yanashima, “Sub-milliampere-threshold continuous wave operation of GaN-based vertical-cavity surface-emitting laser with lateral optical confinement by curved mirror,” Appl. Phys. Express 12(4), 044004 (2019).
[Crossref]

T. Hamaguchi, M. Tanaka, J. Mitomo, H. Nakajima, M. Ito, M. Ohara, N. Kobayashi, K. Fujii, H. Watanabe, S. Satou, R. Koda, and H. Narui, “Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror,” Sci. Rep. 8(1), 10350 (2018).
[Crossref] [PubMed]

Iwaya, M.

W. Muranaga, T. Akagi, R. Fuwa, S. Yoshida, J. Ogimoto, Y. Akatsuka, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “GaN-based vertical-cavity surface-emitting lasers using n-type conductive AlInN/GaN bottom distributed Bragg reflectors with graded interfaces,” Jpn. J. Appl. Phys. 58(SC), SCCC01 (2019).
[Crossref]

N. Hayashi, J. Ogimoto, K. Matsui, T. Furuta, T. Akagi, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “A GaN-Based VCSEL with a Convex Structure for Optical Guiding,” Phys. Status Solidi 215(10), 1700648 (2018).
[Crossref]

Iwayama, S.

W. Muranaga, T. Akagi, R. Fuwa, S. Yoshida, J. Ogimoto, Y. Akatsuka, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “GaN-based vertical-cavity surface-emitting lasers using n-type conductive AlInN/GaN bottom distributed Bragg reflectors with graded interfaces,” Jpn. J. Appl. Phys. 58(SC), SCCC01 (2019).
[Crossref]

N. Hayashi, J. Ogimoto, K. Matsui, T. Furuta, T. Akagi, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “A GaN-Based VCSEL with a Convex Structure for Optical Guiding,” Phys. Status Solidi 215(10), 1700648 (2018).
[Crossref]

Izumi, S.

T. Hamaguchi, N. Fuutagawa, S. Izumi, M. Murayama, and H. Narui, “Continuous wave operation of high power GaN-based blue vertical-cavity surface-emitting lasers using epitaxial lateral overgrowth,” Proc. SPIE 9748, 974817 (2016).
[Crossref]

Johnson, P.

P. Johnson and R. Christy, “Optical constants of transition metals: Ti, V, Cr, Mn, Fe, Co, Ni, and Pd,” Phys. Rev. B 9(12), 5056–5070 (1974).
[Crossref]

Johnson, P. B.

P. B. Johnson and R. W. Christy, “Optical Constants of the Noble Metals,” Phys. Rev. B 6(12), 4370–4379 (1972).
[Crossref]

Jyoukawa, T.

T. Hamaguchi, H. Nakajima, M. Tanaka, M. Ito, M. Ohara, T. Jyoukawa, N. Kobayashi, T. Matou, K. Hayashi, H. Watanabe, R. Koda, and K. Yanashima, “Sub-milliampere-threshold continuous wave operation of GaN-based vertical-cavity surface-emitting laser with lateral optical confinement by curved mirror,” Appl. Phys. Express 12(4), 044004 (2019).
[Crossref]

Kamiyama, S.

W. Muranaga, T. Akagi, R. Fuwa, S. Yoshida, J. Ogimoto, Y. Akatsuka, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “GaN-based vertical-cavity surface-emitting lasers using n-type conductive AlInN/GaN bottom distributed Bragg reflectors with graded interfaces,” Jpn. J. Appl. Phys. 58(SC), SCCC01 (2019).
[Crossref]

N. Hayashi, J. Ogimoto, K. Matsui, T. Furuta, T. Akagi, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “A GaN-Based VCSEL with a Convex Structure for Optical Guiding,” Phys. Status Solidi 215(10), 1700648 (2018).
[Crossref]

Kasahara, D.

D. Kasahara, D. Morita, T. Kosugi, K. Nakagawa, J. Kawamata, Y. Higuchi, H. Matsumura, and T. Mukai, “Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature,” Appl. Phys. Express 4(7), 072103 (2011).
[Crossref]

Katayama, K.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar(202¯1),” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Katayama, T.

M. Kawaguchi, O. Imafuji, K. Nagamatsu, K. Yamanaka, S. Takigawa, and T. Katayama, “Design and lasing characteristics of GaN vertical elongated cavity surface emitting lasers,” Proc. SPIE 8986, 89861K (2014).
[Crossref]

Kawaguchi, M.

M. Kawaguchi, O. Imafuji, K. Nagamatsu, K. Yamanaka, S. Takigawa, and T. Katayama, “Design and lasing characteristics of GaN vertical elongated cavity surface emitting lasers,” Proc. SPIE 8986, 89861K (2014).
[Crossref]

Kawamata, J.

D. Kasahara, D. Morita, T. Kosugi, K. Nakagawa, J. Kawamata, Y. Higuchi, H. Matsumura, and T. Mukai, “Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature,” Appl. Phys. Express 4(7), 072103 (2011).
[Crossref]

Kearns, J. A.

C. A. Forman, S. Lee, E. C. Young, J. A. Kearns, D. A. Cohen, J. T. Leonard, T. Margalith, S. P. DenBaars, and S. Nakamura, “Continuous-wave operation of m -plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact,” Appl. Phys. Lett. 112(11), 111106 (2018).
[Crossref]

Knauer, A.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

Kneissl, M.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

L. Schade, U. T. Schwarz, T. Wernicke, M. Weyers, and M. Kneissl, “Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells,” Phys. Status Solidi 248(3), 638–646 (2011).
[Crossref]

Kobayashi, N.

T. Hamaguchi, H. Nakajima, M. Tanaka, M. Ito, M. Ohara, T. Jyoukawa, N. Kobayashi, T. Matou, K. Hayashi, H. Watanabe, R. Koda, and K. Yanashima, “Sub-milliampere-threshold continuous wave operation of GaN-based vertical-cavity surface-emitting laser with lateral optical confinement by curved mirror,” Appl. Phys. Express 12(4), 044004 (2019).
[Crossref]

T. Hamaguchi, M. Tanaka, J. Mitomo, H. Nakajima, M. Ito, M. Ohara, N. Kobayashi, K. Fujii, H. Watanabe, S. Satou, R. Koda, and H. Narui, “Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror,” Sci. Rep. 8(1), 10350 (2018).
[Crossref] [PubMed]

Kobayashi, S.

M. Kuramoto, S. Kobayashi, T. Akagi, K. Tazawa, K. Tanaka, T. Saito, and T. Takeuchi, “High-Power GaN-Based Vertical-Cavity Surface-Emitting Lasers with AlInN/GaN Distributed Bragg Reflectors,” Appl. Sci. (Basel) 9(3), 416 (2019).
[Crossref]

Koda, R.

T. Hamaguchi, H. Nakajima, M. Tanaka, M. Ito, M. Ohara, T. Jyoukawa, N. Kobayashi, T. Matou, K. Hayashi, H. Watanabe, R. Koda, and K. Yanashima, “Sub-milliampere-threshold continuous wave operation of GaN-based vertical-cavity surface-emitting laser with lateral optical confinement by curved mirror,” Appl. Phys. Express 12(4), 044004 (2019).
[Crossref]

T. Hamaguchi, M. Tanaka, J. Mitomo, H. Nakajima, M. Ito, M. Ohara, N. Kobayashi, K. Fujii, H. Watanabe, S. Satou, R. Koda, and H. Narui, “Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror,” Sci. Rep. 8(1), 10350 (2018).
[Crossref] [PubMed]

Kosugi, T.

D. Kasahara, D. Morita, T. Kosugi, K. Nakagawa, J. Kawamata, Y. Higuchi, H. Matsumura, and T. Mukai, “Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature,” Appl. Phys. Express 4(7), 072103 (2011).
[Crossref]

Kuo, H.-C.

P. S. Yeh, C.-C. Chang, Y.-T. Chen, D.-W. Lin, J.-S. Liou, C. C. Wu, J. H. He, and H.-C. Kuo, “GaN-based vertical-cavity surface emitting lasers with sub-milliamp threshold and small divergence angle,” Appl. Phys. Lett. 109(24), 241103 (2016).
[Crossref]

Kuo, Y.-S.

B. Leung, D. Wang, Y.-S. Kuo, and J. Han, “Complete orientational access for semipolar GaN devices on sapphire,” Phys. Status Solidi 253(1), 23–35 (2016).
[Crossref]

Kuramoto, M.

M. Kuramoto, S. Kobayashi, T. Akagi, K. Tazawa, K. Tanaka, T. Saito, and T. Takeuchi, “High-Power GaN-Based Vertical-Cavity Surface-Emitting Lasers with AlInN/GaN Distributed Bragg Reflectors,” Appl. Sci. (Basel) 9(3), 416 (2019).
[Crossref]

Kyono, T.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar(202¯1),” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Lee, S.

C. A. Forman, S. Lee, E. C. Young, J. A. Kearns, D. A. Cohen, J. T. Leonard, T. Margalith, S. P. DenBaars, and S. Nakamura, “Continuous-wave operation of m -plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact,” Appl. Phys. Lett. 112(11), 111106 (2018).
[Crossref]

J. T. Leonard, B. P. Yonkee, D. A. Cohen, L. Megalini, S. Lee, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture,” Appl. Phys. Lett. 108(3), 031111 (2016).
[Crossref]

J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, T. Margalith, S. Lee, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture,” Appl. Phys. Lett. 107(1), 011102 (2015).
[Crossref]

Leonard, J. T.

C. A. Forman, S. Lee, E. C. Young, J. A. Kearns, D. A. Cohen, J. T. Leonard, T. Margalith, S. P. DenBaars, and S. Nakamura, “Continuous-wave operation of m -plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact,” Appl. Phys. Lett. 112(11), 111106 (2018).
[Crossref]

J. T. Leonard, B. P. Yonkee, D. A. Cohen, L. Megalini, S. Lee, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture,” Appl. Phys. Lett. 108(3), 031111 (2016).
[Crossref]

J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, T. Margalith, S. Lee, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture,” Appl. Phys. Lett. 107(1), 011102 (2015).
[Crossref]

J. T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts,” J. Appl. Phys. 118(14), 145304 (2015).
[Crossref]

C. O. Holder, J. T. Leonard, R. M. Farrell, D. A. Cohen, B. Yonkee, J. S. Speck, S. P. Denbaars, S. Nakamura, and D. F. Feezell, “Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching,” Appl. Phys. Lett. 105(3), 1–6 (2014).
[Crossref]

Leung, B.

B. Leung, D. Wang, Y.-S. Kuo, and J. Han, “Complete orientational access for semipolar GaN devices on sapphire,” Phys. Status Solidi 253(1), 23–35 (2016).
[Crossref]

Lin, D.-W.

P. S. Yeh, C.-C. Chang, Y.-T. Chen, D.-W. Lin, J.-S. Liou, C. C. Wu, J. H. He, and H.-C. Kuo, “GaN-based vertical-cavity surface emitting lasers with sub-milliamp threshold and small divergence angle,” Appl. Phys. Lett. 109(24), 241103 (2016).
[Crossref]

Lin, Y.-D.

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

Liou, J.-S.

P. S. Yeh, C.-C. Chang, Y.-T. Chen, D.-W. Lin, J.-S. Liou, C. C. Wu, J. H. He, and H.-C. Kuo, “GaN-based vertical-cavity surface emitting lasers with sub-milliamp threshold and small divergence angle,” Appl. Phys. Lett. 109(24), 241103 (2016).
[Crossref]

Liu, W. J.

W. J. Liu, X. L. Hu, L. Y. Ying, S. Q. Chen, J. Y. Zhang, H. Akiyama, Z. P. Cai, and B. P. Zhang, “On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers,” Sci. Rep. 5(1), 9600 (2015).
[Crossref] [PubMed]

Luk, T. S.

S. M. Mishkat-Ul-Masabih, A. A. Aragon, M. Monavarian, T. S. Luk, and D. F. Feezell, “Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors,” Appl. Phys. Express 12(3), 036504 (2019).
[Crossref]

Marciniak, M.

R. P. Sarzała, K. Pijanowski, M. Gębski, M. Marciniak, and W. Nakwaski, “Designing of TJ VCSEL based on nitride materials,” Proc. SPIE 10159, 1015908 (2016).
[Crossref]

Margalith, T.

C. A. Forman, S. Lee, E. C. Young, J. A. Kearns, D. A. Cohen, J. T. Leonard, T. Margalith, S. P. DenBaars, and S. Nakamura, “Continuous-wave operation of m -plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact,” Appl. Phys. Lett. 112(11), 111106 (2018).
[Crossref]

J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, T. Margalith, S. Lee, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture,” Appl. Phys. Lett. 107(1), 011102 (2015).
[Crossref]

J. T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

Matou, T.

T. Hamaguchi, H. Nakajima, M. Tanaka, M. Ito, M. Ohara, T. Jyoukawa, N. Kobayashi, T. Matou, K. Hayashi, H. Watanabe, R. Koda, and K. Yanashima, “Sub-milliampere-threshold continuous wave operation of GaN-based vertical-cavity surface-emitting laser with lateral optical confinement by curved mirror,” Appl. Phys. Express 12(4), 044004 (2019).
[Crossref]

Matsui, K.

N. Hayashi, J. Ogimoto, K. Matsui, T. Furuta, T. Akagi, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “A GaN-Based VCSEL with a Convex Structure for Optical Guiding,” Phys. Status Solidi 215(10), 1700648 (2018).
[Crossref]

Matsumura, H.

D. Kasahara, D. Morita, T. Kosugi, K. Nakagawa, J. Kawamata, Y. Higuchi, H. Matsumura, and T. Mukai, “Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature,” Appl. Phys. Express 4(7), 072103 (2011).
[Crossref]

Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai, “Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection,” Appl. Phys. Express 1, 121102 (2008).
[Crossref]

Megalini, L.

J. T. Leonard, B. P. Yonkee, D. A. Cohen, L. Megalini, S. Lee, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture,” Appl. Phys. Lett. 108(3), 031111 (2016).
[Crossref]

Mehari, S.

D. L. Becerra, D. A. Cohen, S. Mehari, S. P. DenBaars, and S. Nakamura, “Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization,” J. Cryst. Growth 507, 118–123 (2019).
[Crossref]

Mishkat-Ul-Masabih, S. M.

S. M. Mishkat-Ul-Masabih, A. A. Aragon, M. Monavarian, T. S. Luk, and D. F. Feezell, “Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors,” Appl. Phys. Express 12(3), 036504 (2019).
[Crossref]

Mitomo, J.

T. Hamaguchi, M. Tanaka, J. Mitomo, H. Nakajima, M. Ito, M. Ohara, N. Kobayashi, K. Fujii, H. Watanabe, S. Satou, R. Koda, and H. Narui, “Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror,” Sci. Rep. 8(1), 10350 (2018).
[Crossref] [PubMed]

Monavarian, M.

S. M. Mishkat-Ul-Masabih, A. A. Aragon, M. Monavarian, T. S. Luk, and D. F. Feezell, “Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors,” Appl. Phys. Express 12(3), 036504 (2019).
[Crossref]

Morita, D.

D. Kasahara, D. Morita, T. Kosugi, K. Nakagawa, J. Kawamata, Y. Higuchi, H. Matsumura, and T. Mukai, “Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature,” Appl. Phys. Express 4(7), 072103 (2011).
[Crossref]

Mukai, T.

D. Kasahara, D. Morita, T. Kosugi, K. Nakagawa, J. Kawamata, Y. Higuchi, H. Matsumura, and T. Mukai, “Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature,” Appl. Phys. Express 4(7), 072103 (2011).
[Crossref]

Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai, “Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection,” Appl. Phys. Express 1, 121102 (2008).
[Crossref]

Muranaga, W.

W. Muranaga, T. Akagi, R. Fuwa, S. Yoshida, J. Ogimoto, Y. Akatsuka, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “GaN-based vertical-cavity surface-emitting lasers using n-type conductive AlInN/GaN bottom distributed Bragg reflectors with graded interfaces,” Jpn. J. Appl. Phys. 58(SC), SCCC01 (2019).
[Crossref]

Murayama, M.

T. Hamaguchi, N. Fuutagawa, S. Izumi, M. Murayama, and H. Narui, “Continuous wave operation of high power GaN-based blue vertical-cavity surface-emitting lasers using epitaxial lateral overgrowth,” Proc. SPIE 9748, 974817 (2016).
[Crossref]

Nagamatsu, K.

M. Kawaguchi, O. Imafuji, K. Nagamatsu, K. Yamanaka, S. Takigawa, and T. Katayama, “Design and lasing characteristics of GaN vertical elongated cavity surface emitting lasers,” Proc. SPIE 8986, 89861K (2014).
[Crossref]

Nakagawa, K.

D. Kasahara, D. Morita, T. Kosugi, K. Nakagawa, J. Kawamata, Y. Higuchi, H. Matsumura, and T. Mukai, “Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature,” Appl. Phys. Express 4(7), 072103 (2011).
[Crossref]

Nakajima, H.

T. Hamaguchi, H. Nakajima, M. Tanaka, M. Ito, M. Ohara, T. Jyoukawa, N. Kobayashi, T. Matou, K. Hayashi, H. Watanabe, R. Koda, and K. Yanashima, “Sub-milliampere-threshold continuous wave operation of GaN-based vertical-cavity surface-emitting laser with lateral optical confinement by curved mirror,” Appl. Phys. Express 12(4), 044004 (2019).
[Crossref]

T. Hamaguchi, M. Tanaka, J. Mitomo, H. Nakajima, M. Ito, M. Ohara, N. Kobayashi, K. Fujii, H. Watanabe, S. Satou, R. Koda, and H. Narui, “Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror,” Sci. Rep. 8(1), 10350 (2018).
[Crossref] [PubMed]

Nakamura, S.

D. L. Becerra, D. A. Cohen, S. Mehari, S. P. DenBaars, and S. Nakamura, “Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization,” J. Cryst. Growth 507, 118–123 (2019).
[Crossref]

A. S. Abbas, A. Y. Alyamani, S. Nakamura, and S. P. Dembaars, “Enhancement of n-type GaN(202¯1),” Appl. Phys. Express 12(3), 036503 (2019).
[Crossref]

C. A. Forman, S. Lee, E. C. Young, J. A. Kearns, D. A. Cohen, J. T. Leonard, T. Margalith, S. P. DenBaars, and S. Nakamura, “Continuous-wave operation of m -plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact,” Appl. Phys. Lett. 112(11), 111106 (2018).
[Crossref]

J. T. Leonard, B. P. Yonkee, D. A. Cohen, L. Megalini, S. Lee, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture,” Appl. Phys. Lett. 108(3), 031111 (2016).
[Crossref]

J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, T. Margalith, S. Lee, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture,” Appl. Phys. Lett. 107(1), 011102 (2015).
[Crossref]

J. T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts,” J. Appl. Phys. 118(14), 145304 (2015).
[Crossref]

C. O. Holder, J. T. Leonard, R. M. Farrell, D. A. Cohen, B. Yonkee, J. S. Speck, S. P. Denbaars, S. Nakamura, and D. F. Feezell, “Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching,” Appl. Phys. Lett. 105(3), 1–6 (2014).
[Crossref]

C. Holder, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers,” Appl. Phys. Express 5(9), 092104 (2012).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯),” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar(202¯1),” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Nakamura, T.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar(202¯1),” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Nakwaski, W.

R. P. Sarzała, K. Pijanowski, M. Gębski, M. Marciniak, and W. Nakwaski, “Designing of TJ VCSEL based on nitride materials,” Proc. SPIE 10159, 1015908 (2016).
[Crossref]

Narui, H.

T. Hamaguchi, M. Tanaka, J. Mitomo, H. Nakajima, M. Ito, M. Ohara, N. Kobayashi, K. Fujii, H. Watanabe, S. Satou, R. Koda, and H. Narui, “Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror,” Sci. Rep. 8(1), 10350 (2018).
[Crossref] [PubMed]

T. Hamaguchi, N. Fuutagawa, S. Izumi, M. Murayama, and H. Narui, “Continuous wave operation of high power GaN-based blue vertical-cavity surface-emitting lasers using epitaxial lateral overgrowth,” Proc. SPIE 9748, 974817 (2016).
[Crossref]

Netzel, C.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

Ogimoto, J.

W. Muranaga, T. Akagi, R. Fuwa, S. Yoshida, J. Ogimoto, Y. Akatsuka, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “GaN-based vertical-cavity surface-emitting lasers using n-type conductive AlInN/GaN bottom distributed Bragg reflectors with graded interfaces,” Jpn. J. Appl. Phys. 58(SC), SCCC01 (2019).
[Crossref]

N. Hayashi, J. Ogimoto, K. Matsui, T. Furuta, T. Akagi, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “A GaN-Based VCSEL with a Convex Structure for Optical Guiding,” Phys. Status Solidi 215(10), 1700648 (2018).
[Crossref]

Ohara, M.

T. Hamaguchi, H. Nakajima, M. Tanaka, M. Ito, M. Ohara, T. Jyoukawa, N. Kobayashi, T. Matou, K. Hayashi, H. Watanabe, R. Koda, and K. Yanashima, “Sub-milliampere-threshold continuous wave operation of GaN-based vertical-cavity surface-emitting laser with lateral optical confinement by curved mirror,” Appl. Phys. Express 12(4), 044004 (2019).
[Crossref]

T. Hamaguchi, M. Tanaka, J. Mitomo, H. Nakajima, M. Ito, M. Ohara, N. Kobayashi, K. Fujii, H. Watanabe, S. Satou, R. Koda, and H. Narui, “Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror,” Sci. Rep. 8(1), 10350 (2018).
[Crossref] [PubMed]

Ohta, H.

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

Omae, K.

Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai, “Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection,” Appl. Phys. Express 1, 121102 (2008).
[Crossref]

Pan, C.-C.

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯),” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar(202¯1),” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Park, S.-H.

S.-H. Park and D. Ahn, “Depolarization effects in(112¯2), ” Appl. Phys. Lett. 90(1), 013505 (2007).
[Crossref]

Pijanowski, K.

R. P. Sarzała, K. Pijanowski, M. Gębski, M. Marciniak, and W. Nakwaski, “Designing of TJ VCSEL based on nitride materials,” Proc. SPIE 10159, 1015908 (2016).
[Crossref]

Ploch, S.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

Rass, J.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

Saito, T.

M. Kuramoto, S. Kobayashi, T. Akagi, K. Tazawa, K. Tanaka, T. Saito, and T. Takeuchi, “High-Power GaN-Based Vertical-Cavity Surface-Emitting Lasers with AlInN/GaN Distributed Bragg Reflectors,” Appl. Sci. (Basel) 9(3), 416 (2019).
[Crossref]

Sarzala, R. P.

R. P. Sarzała, K. Pijanowski, M. Gębski, M. Marciniak, and W. Nakwaski, “Designing of TJ VCSEL based on nitride materials,” Proc. SPIE 10159, 1015908 (2016).
[Crossref]

Satou, S.

T. Hamaguchi, M. Tanaka, J. Mitomo, H. Nakajima, M. Ito, M. Ohara, N. Kobayashi, K. Fujii, H. Watanabe, S. Satou, R. Koda, and H. Narui, “Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror,” Sci. Rep. 8(1), 10350 (2018).
[Crossref] [PubMed]

Schade, L.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

L. Schade, U. T. Schwarz, T. Wernicke, M. Weyers, and M. Kneissl, “Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells,” Phys. Status Solidi 248(3), 638–646 (2011).
[Crossref]

Schwarz, U.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

Schwarz, U. T.

L. Schade, U. T. Schwarz, T. Wernicke, M. Weyers, and M. Kneissl, “Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells,” Phys. Status Solidi 248(3), 638–646 (2011).
[Crossref]

Sonoda, J.

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar(202¯1),” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Speck, J. S.

J. T. Leonard, B. P. Yonkee, D. A. Cohen, L. Megalini, S. Lee, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture,” Appl. Phys. Lett. 108(3), 031111 (2016).
[Crossref]

J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, T. Margalith, S. Lee, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture,” Appl. Phys. Lett. 107(1), 011102 (2015).
[Crossref]

J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts,” J. Appl. Phys. 118(14), 145304 (2015).
[Crossref]

J. T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

C. O. Holder, J. T. Leonard, R. M. Farrell, D. A. Cohen, B. Yonkee, J. S. Speck, S. P. Denbaars, S. Nakamura, and D. F. Feezell, “Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching,” Appl. Phys. Lett. 105(3), 1–6 (2014).
[Crossref]

C. Holder, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers,” Appl. Phys. Express 5(9), 092104 (2012).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯),” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

Sumitomo, T.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar(202¯1),” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Takeuchi, T.

W. Muranaga, T. Akagi, R. Fuwa, S. Yoshida, J. Ogimoto, Y. Akatsuka, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “GaN-based vertical-cavity surface-emitting lasers using n-type conductive AlInN/GaN bottom distributed Bragg reflectors with graded interfaces,” Jpn. J. Appl. Phys. 58(SC), SCCC01 (2019).
[Crossref]

M. Kuramoto, S. Kobayashi, T. Akagi, K. Tazawa, K. Tanaka, T. Saito, and T. Takeuchi, “High-Power GaN-Based Vertical-Cavity Surface-Emitting Lasers with AlInN/GaN Distributed Bragg Reflectors,” Appl. Sci. (Basel) 9(3), 416 (2019).
[Crossref]

N. Hayashi, J. Ogimoto, K. Matsui, T. Furuta, T. Akagi, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “A GaN-Based VCSEL with a Convex Structure for Optical Guiding,” Phys. Status Solidi 215(10), 1700648 (2018).
[Crossref]

Takigawa, S.

M. Kawaguchi, O. Imafuji, K. Nagamatsu, K. Yamanaka, S. Takigawa, and T. Katayama, “Design and lasing characteristics of GaN vertical elongated cavity surface emitting lasers,” Proc. SPIE 8986, 89861K (2014).
[Crossref]

Tanaka, K.

M. Kuramoto, S. Kobayashi, T. Akagi, K. Tazawa, K. Tanaka, T. Saito, and T. Takeuchi, “High-Power GaN-Based Vertical-Cavity Surface-Emitting Lasers with AlInN/GaN Distributed Bragg Reflectors,” Appl. Sci. (Basel) 9(3), 416 (2019).
[Crossref]

Tanaka, M.

T. Hamaguchi, H. Nakajima, M. Tanaka, M. Ito, M. Ohara, T. Jyoukawa, N. Kobayashi, T. Matou, K. Hayashi, H. Watanabe, R. Koda, and K. Yanashima, “Sub-milliampere-threshold continuous wave operation of GaN-based vertical-cavity surface-emitting laser with lateral optical confinement by curved mirror,” Appl. Phys. Express 12(4), 044004 (2019).
[Crossref]

T. Hamaguchi, M. Tanaka, J. Mitomo, H. Nakajima, M. Ito, M. Ohara, N. Kobayashi, K. Fujii, H. Watanabe, S. Satou, R. Koda, and H. Narui, “Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror,” Sci. Rep. 8(1), 10350 (2018).
[Crossref] [PubMed]

Tanaka, S.

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯),” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Tazawa, K.

M. Kuramoto, S. Kobayashi, T. Akagi, K. Tazawa, K. Tanaka, T. Saito, and T. Takeuchi, “High-Power GaN-Based Vertical-Cavity Surface-Emitting Lasers with AlInN/GaN Distributed Bragg Reflectors,” Appl. Sci. (Basel) 9(3), 416 (2019).
[Crossref]

Tokuyama, S.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar(202¯1),” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Ueno, M.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar(202¯1),” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Van de Walle, C. G.

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯),” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Wang, D.

B. Leung, D. Wang, Y.-S. Kuo, and J. Han, “Complete orientational access for semipolar GaN devices on sapphire,” Phys. Status Solidi 253(1), 23–35 (2016).
[Crossref]

Watanabe, H.

T. Hamaguchi, H. Nakajima, M. Tanaka, M. Ito, M. Ohara, T. Jyoukawa, N. Kobayashi, T. Matou, K. Hayashi, H. Watanabe, R. Koda, and K. Yanashima, “Sub-milliampere-threshold continuous wave operation of GaN-based vertical-cavity surface-emitting laser with lateral optical confinement by curved mirror,” Appl. Phys. Express 12(4), 044004 (2019).
[Crossref]

T. Hamaguchi, M. Tanaka, J. Mitomo, H. Nakajima, M. Ito, M. Ohara, N. Kobayashi, K. Fujii, H. Watanabe, S. Satou, R. Koda, and H. Narui, “Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror,” Sci. Rep. 8(1), 10350 (2018).
[Crossref] [PubMed]

Wernicke, T.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

L. Schade, U. T. Schwarz, T. Wernicke, M. Weyers, and M. Kneissl, “Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells,” Phys. Status Solidi 248(3), 638–646 (2011).
[Crossref]

Weyers, M.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

L. Schade, U. T. Schwarz, T. Wernicke, M. Weyers, and M. Kneissl, “Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells,” Phys. Status Solidi 248(3), 638–646 (2011).
[Crossref]

Wu, C. C.

P. S. Yeh, C.-C. Chang, Y.-T. Chen, D.-W. Lin, J.-S. Liou, C. C. Wu, J. H. He, and H.-C. Kuo, “GaN-based vertical-cavity surface emitting lasers with sub-milliamp threshold and small divergence angle,” Appl. Phys. Lett. 109(24), 241103 (2016).
[Crossref]

Wu, F.

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

Yamamoto, S.

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar(202¯1),” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Yamanaka, K.

M. Kawaguchi, O. Imafuji, K. Nagamatsu, K. Yamanaka, S. Takigawa, and T. Katayama, “Design and lasing characteristics of GaN vertical elongated cavity surface emitting lasers,” Proc. SPIE 8986, 89861K (2014).
[Crossref]

Yan, Q.

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯),” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Yanashima, K.

T. Hamaguchi, H. Nakajima, M. Tanaka, M. Ito, M. Ohara, T. Jyoukawa, N. Kobayashi, T. Matou, K. Hayashi, H. Watanabe, R. Koda, and K. Yanashima, “Sub-milliampere-threshold continuous wave operation of GaN-based vertical-cavity surface-emitting laser with lateral optical confinement by curved mirror,” Appl. Phys. Express 12(4), 044004 (2019).
[Crossref]

Yeh, P. S.

P. S. Yeh, C.-C. Chang, Y.-T. Chen, D.-W. Lin, J.-S. Liou, C. C. Wu, J. H. He, and H.-C. Kuo, “GaN-based vertical-cavity surface emitting lasers with sub-milliamp threshold and small divergence angle,” Appl. Phys. Lett. 109(24), 241103 (2016).
[Crossref]

Ying, L. Y.

W. J. Liu, X. L. Hu, L. Y. Ying, S. Q. Chen, J. Y. Zhang, H. Akiyama, Z. P. Cai, and B. P. Zhang, “On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers,” Sci. Rep. 5(1), 9600 (2015).
[Crossref] [PubMed]

Yonkee, B.

C. O. Holder, J. T. Leonard, R. M. Farrell, D. A. Cohen, B. Yonkee, J. S. Speck, S. P. Denbaars, S. Nakamura, and D. F. Feezell, “Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching,” Appl. Phys. Lett. 105(3), 1–6 (2014).
[Crossref]

Yonkee, B. P.

J. T. Leonard, B. P. Yonkee, D. A. Cohen, L. Megalini, S. Lee, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture,” Appl. Phys. Lett. 108(3), 031111 (2016).
[Crossref]

J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, T. Margalith, S. Lee, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture,” Appl. Phys. Lett. 107(1), 011102 (2015).
[Crossref]

J. T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts,” J. Appl. Phys. 118(14), 145304 (2015).
[Crossref]

Yoshida, S.

W. Muranaga, T. Akagi, R. Fuwa, S. Yoshida, J. Ogimoto, Y. Akatsuka, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “GaN-based vertical-cavity surface-emitting lasers using n-type conductive AlInN/GaN bottom distributed Bragg reflectors with graded interfaces,” Jpn. J. Appl. Phys. 58(SC), SCCC01 (2019).
[Crossref]

Yoshizumi, Y.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar(202¯1),” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Young, E. C.

C. A. Forman, S. Lee, E. C. Young, J. A. Kearns, D. A. Cohen, J. T. Leonard, T. Margalith, S. P. DenBaars, and S. Nakamura, “Continuous-wave operation of m -plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact,” Appl. Phys. Lett. 112(11), 111106 (2018).
[Crossref]

J. T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

Zhang, B. P.

W. J. Liu, X. L. Hu, L. Y. Ying, S. Q. Chen, J. Y. Zhang, H. Akiyama, Z. P. Cai, and B. P. Zhang, “On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers,” Sci. Rep. 5(1), 9600 (2015).
[Crossref] [PubMed]

Zhang, J. Y.

W. J. Liu, X. L. Hu, L. Y. Ying, S. Q. Chen, J. Y. Zhang, H. Akiyama, Z. P. Cai, and B. P. Zhang, “On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers,” Sci. Rep. 5(1), 9600 (2015).
[Crossref] [PubMed]

Zhao, Y.

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯),” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar(202¯1),” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Appl. Phys. Express (9)

D. Kasahara, D. Morita, T. Kosugi, K. Nakagawa, J. Kawamata, Y. Higuchi, H. Matsumura, and T. Mukai, “Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature,” Appl. Phys. Express 4(7), 072103 (2011).
[Crossref]

T. Hamaguchi, H. Nakajima, M. Tanaka, M. Ito, M. Ohara, T. Jyoukawa, N. Kobayashi, T. Matou, K. Hayashi, H. Watanabe, R. Koda, and K. Yanashima, “Sub-milliampere-threshold continuous wave operation of GaN-based vertical-cavity surface-emitting laser with lateral optical confinement by curved mirror,” Appl. Phys. Express 12(4), 044004 (2019).
[Crossref]

C. Holder, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers,” Appl. Phys. Express 5(9), 092104 (2012).
[Crossref]

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar(202¯1),” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar(202¯1),” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

A. S. Abbas, A. Y. Alyamani, S. Nakamura, and S. P. Dembaars, “Enhancement of n-type GaN(202¯1),” Appl. Phys. Express 12(3), 036503 (2019).
[Crossref]

S. M. Mishkat-Ul-Masabih, A. A. Aragon, M. Monavarian, T. S. Luk, and D. F. Feezell, “Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors,” Appl. Phys. Express 12(3), 036504 (2019).
[Crossref]

Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai, “Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection,” Appl. Phys. Express 1, 121102 (2008).
[Crossref]

Appl. Phys. Lett. (8)

J. T. Leonard, E. C. Young, B. P. Yonkee, D. A. Cohen, T. Margalith, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact,” Appl. Phys. Lett. 107(9), 091105 (2015).
[Crossref]

S.-H. Park and D. Ahn, “Depolarization effects in(112¯2), ” Appl. Phys. Lett. 90(1), 013505 (2007).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯),” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

C. A. Forman, S. Lee, E. C. Young, J. A. Kearns, D. A. Cohen, J. T. Leonard, T. Margalith, S. P. DenBaars, and S. Nakamura, “Continuous-wave operation of m -plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact,” Appl. Phys. Lett. 112(11), 111106 (2018).
[Crossref]

C. O. Holder, J. T. Leonard, R. M. Farrell, D. A. Cohen, B. Yonkee, J. S. Speck, S. P. Denbaars, S. Nakamura, and D. F. Feezell, “Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching,” Appl. Phys. Lett. 105(3), 1–6 (2014).
[Crossref]

P. S. Yeh, C.-C. Chang, Y.-T. Chen, D.-W. Lin, J.-S. Liou, C. C. Wu, J. H. He, and H.-C. Kuo, “GaN-based vertical-cavity surface emitting lasers with sub-milliamp threshold and small divergence angle,” Appl. Phys. Lett. 109(24), 241103 (2016).
[Crossref]

J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, T. Margalith, S. Lee, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture,” Appl. Phys. Lett. 107(1), 011102 (2015).
[Crossref]

J. T. Leonard, B. P. Yonkee, D. A. Cohen, L. Megalini, S. Lee, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture,” Appl. Phys. Lett. 108(3), 031111 (2016).
[Crossref]

Appl. Sci. (Basel) (1)

M. Kuramoto, S. Kobayashi, T. Akagi, K. Tazawa, K. Tanaka, T. Saito, and T. Takeuchi, “High-Power GaN-Based Vertical-Cavity Surface-Emitting Lasers with AlInN/GaN Distributed Bragg Reflectors,” Appl. Sci. (Basel) 9(3), 416 (2019).
[Crossref]

J. Appl. Phys. (1)

J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts,” J. Appl. Phys. 118(14), 145304 (2015).
[Crossref]

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D. L. Becerra, D. A. Cohen, S. Mehari, S. P. DenBaars, and S. Nakamura, “Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization,” J. Cryst. Growth 507, 118–123 (2019).
[Crossref]

Jpn. J. Appl. Phys. (1)

W. Muranaga, T. Akagi, R. Fuwa, S. Yoshida, J. Ogimoto, Y. Akatsuka, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “GaN-based vertical-cavity surface-emitting lasers using n-type conductive AlInN/GaN bottom distributed Bragg reflectors with graded interfaces,” Jpn. J. Appl. Phys. 58(SC), SCCC01 (2019).
[Crossref]

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[Crossref]

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[Crossref]

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[Crossref]

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T. Hamaguchi, M. Tanaka, J. Mitomo, H. Nakajima, M. Ito, M. Ohara, N. Kobayashi, K. Fujii, H. Watanabe, S. Satou, R. Koda, and H. Narui, “Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror,” Sci. Rep. 8(1), 10350 (2018).
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T. Furuta, K. Matsui, Y. Kozuka, S. Yoshida, N. Hayasi, T. Akagi, N. Koide, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki, “1.7-mW nitride-based vertical-cavity surface-emitting lasers using AlInN/GaN bottom DBRs,” 2016 Int. Semicond. Laser Conf. 1–2 (2016).

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Figures (4)

Fig. 1
Fig. 1 Schematic of the semipolar VCSEL device structure.
Fig. 2
Fig. 2 Light-current-voltage results (a) for a 12 µm aperture VCSEL under pulsed operation with a 2.5% duty cycle and a 1 μs pulse width. The inset of (a) depicts the nearfield pattern at 5% above threshold. This pattern is maintained at higher current densities. The spectrum (b) for an adjacent 12 µm aperture device is shown for different stage temperatures when held at 12 mA. This second device was used for thermal characterization due to a catastrophic failure of the other during testing.
Fig. 3
Fig. 3 The white circle on the nearfield pattern (a) defines the edge of the metal contact. The green circle represents the unimplanted aperture, while the red circle defines the mode. The light seen to the right of the unimplanted aperture is due to scattering from the edge of the bonding metal. (b) Shows the spectrum of an example 8 um VCSEL at different polarization angles. The polarization of maximum intensity was found to be parallel to the a-direction.
Fig. 4
Fig. 4 The secondary ion image taken with focused ion beam microscopy shows the voids formed in the bonding metal, highlighted by the red rectangle.

Equations (2)

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p= ( I [ 1 ¯ 2 1 ¯ 0] I [ 1 ¯ 01 4 ¯ ] ) ( I [ 1 ¯ 2 1 ¯ 0] + I [ 1 ¯ 01 4 ¯ ] ) ,
η d1 = F 1 η i α m α m + α i + α s ,

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