H. Ahmad, M. Z. Samion, A. S. Sharbirin, and M. F. Ismail, “Dual-wavelength, passively Q-switched thulium-doped fiber laser with n-doped graphene saturable absorber,” Optik 149, 391–397 (2017).
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M. B. S. Sabran, Z. Jusoh, I. M. Babar, H. Ahmad, and S. W. Harun, “Dual-wavelength passively Q-switched erbium ytterbium codoped fiber laser based on a nonlinear polarization rotation technique,” Microw. Opt. Technol. Lett. 57(3), 530–533 (2015).
[Crossref]
T. Akiyama, M. Ekawa, M. Sugawara, K. Kawaguchi, H. Sudo, H. Kuwatsuka, H. Ebe, A. Kuramata, and Y. Arakawa, “Quantum dots for semiconductor optical amplifiers,” in Optical Fiber Communication Conference, 2005 OSA Technical Digest (CD) (Optical Society of America, 2005), paper OWM2.
A. Salhi, S. Alshaibani, Y. Alaskar, A. Albadri, A. Alyamani, and M. Missous, “Tuning the optical properties of InAs QDs by means of digitally-alloyed GaAsSb strain reducing layers,” Appl. Phys. Lett. 113(10), 103101 (2018).
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A. Salhi, S. Alshaibani, Y. Alaskar, A. Albadri, A. Alyamani, and M. Missous, “Tuning the optical properties of InAs QDs by means of digitally-alloyed GaAsSb strain reducing layers,” Appl. Phys. Lett. 113(10), 103101 (2018).
[Crossref]
C. Scurtescu, Z. Y. Zhang, J. Alcock, R. Fedosejevs, M. Blumin, I. Saveliev, S. Yang, H. Ruda, and Y. Y. Tsui, “Quantum dot saturable absorber for passive mode locking of Nd:YVO4 lasers at 1064 nm,” Appl. Phys. B: Lasers Opt. 87(4), 671–675 (2007).
[Crossref]
A. Bosacchi, P. Frigeri, S. Franchi, P. Allegri, and V. Avanzini, “InAs/GaAs self-assembled quantum dots grown by ALMBE and MBE,” J. Cryst. Growth 175-176, 771–776 (1997).
[Crossref]
A. Salhi, S. Alshaibani, Y. Alaskar, A. Albadri, A. Alyamani, and M. Missous, “Tuning the optical properties of InAs QDs by means of digitally-alloyed GaAsSb strain reducing layers,” Appl. Phys. Lett. 113(10), 103101 (2018).
[Crossref]
A. Salhi, S. Alshaibani, Y. Alaskar, A. Albadri, A. Alyamani, and M. Missous, “Tuning the optical properties of InAs QDs by means of digitally-alloyed GaAsSb strain reducing layers,” Appl. Phys. Lett. 113(10), 103101 (2018).
[Crossref]
T. Akiyama, M. Ekawa, M. Sugawara, K. Kawaguchi, H. Sudo, H. Kuwatsuka, H. Ebe, A. Kuramata, and Y. Arakawa, “Quantum dots for semiconductor optical amplifiers,” in Optical Fiber Communication Conference, 2005 OSA Technical Digest (CD) (Optical Society of America, 2005), paper OWM2.
A. Bosacchi, P. Frigeri, S. Franchi, P. Allegri, and V. Avanzini, “InAs/GaAs self-assembled quantum dots grown by ALMBE and MBE,” J. Cryst. Growth 175-176, 771–776 (1997).
[Crossref]
M. B. S. Sabran, Z. Jusoh, I. M. Babar, H. Ahmad, and S. W. Harun, “Dual-wavelength passively Q-switched erbium ytterbium codoped fiber laser based on a nonlinear polarization rotation technique,” Microw. Opt. Technol. Lett. 57(3), 530–533 (2015).
[Crossref]
Y. Sun, Y. Bai, D. Li, L. Hou, B. Bai, Y. Gong, L. Yu, and J. Bai, “946 nm Nd:YAG double Q-switched laser based on monolayer WSe2 saturable absorber,” Opt. Express 25(18), 21312 (2017).
[Crossref]
Y. Sun, Y. Bai, D. Li, L. Hou, B. Bai, Y. Gong, L. Yu, and J. Bai, “946 nm Nd:YAG double Q-switched laser based on monolayer WSe2 saturable absorber,” Opt. Express 25(18), 21312 (2017).
[Crossref]
Y. Sun, Y. Bai, D. Li, L. Hou, B. Bai, Y. Gong, L. Yu, and J. Bai, “946 nm Nd:YAG double Q-switched laser based on monolayer WSe2 saturable absorber,” Opt. Express 25(18), 21312 (2017).
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G. M. Matutano, D. Barrera, C. R. F. Pousa, R. C. Jordan, L. Seravalli, G. Trevisi, P. Frigeri, S. Sales, and J. M. Pastor, “All-Optical Fiber Hanbury Brown & Twiss Interferometer to study 1300 nm single photon emission of a metamorphic InAs Quantum Dot,” Sci. Rep. 6(1), 27214 (2016).
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E. S. Semenova, R. Hostein, G. Patriache, O. Mauguin, L. Largeau, I. R. Philip, A. Beveratos, and A. Lemaite, “Metamorphic approach to single quantum dot emission at 1.55 µm on GaAs substrate,” J. Appl. Phys. 103(10), 103533 (2008).
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Z. Mi, P. Bhattacharya, and J. Yang, “Growth and characteristics of ultralow threshold 1.45 µm metamorphic InAs tunnel injection quantum dot lasers on GaAs,” Appl. Phys. Lett. 89(15), 153109 (2006).
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L. Liu, Z. Zheng, X. Zhao, S. Sun, Y. Bian, Y. Su, J. Liu, and J. Zhu, “Dual-wavelength passively Q-switched Erbium doped fiber laser based on an SWNT saturable absorber,” Opt. Commun. 294, 267–270 (2013).
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N. N. Ledentsov, A. R. Kovsh, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, A. P. Vasil’ev, E. S. Semenova, M. V. Maximov, Y. M. Shernyakov, N. V. Kryzhanovskaya, V. M. Ustinov, and D. Bimberg, “High performance quantum dot lasers on GaAs substrates operating in 1.5 µm range,” Electron. Lett. 39(15), 1126–1128 (2003).
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E. S. Semenova, A. E. Zhukov, S. S. Mikhrin, A. Y. Egorov, V. A. Odnoblyudov, A. P. Vasil’ev, E. V. Nikitina, A. R. Kovsh, N. V. Kryzhanovskaya, A. G. Gladyshev, S. A. Blokhin, Y. G. Musikhin, M. V. Maximov, Y. M. Shernyakov, V. M. Ustinov, and N. N. Ledentsov, “Metamorphic growth for application in long-wavelength (1.3–1.55 µm) lasers and MODFET- type structures on GaAs substrates,” Nanotechnology 15(4), S283–S287 (2004).
[Crossref]
C. Scurtescu, Z. Y. Zhang, J. Alcock, R. Fedosejevs, M. Blumin, I. Saveliev, S. Yang, H. Ruda, and Y. Y. Tsui, “Quantum dot saturable absorber for passive mode locking of Nd:YVO4 lasers at 1064 nm,” Appl. Phys. B: Lasers Opt. 87(4), 671–675 (2007).
[Crossref]
L. Seravalli, P. Frigeri, L. Nasi, G. Trevisi, and C. Bocchi, “Metamorphic quantum dots: Quite different nanostructures,” J. Appl. Phys. 108(6), 064324 (2010).
[Crossref]
A. Bosacchi, P. Frigeri, S. Franchi, P. Allegri, and V. Avanzini, “InAs/GaAs self-assembled quantum dots grown by ALMBE and MBE,” J. Cryst. Growth 175-176, 771–776 (1997).
[Crossref]
L. Seravalli, M. Gioannini, F. Cappelluti, F. Sacconi, G. Trevisi, and P. Frigeri, “Broadband light sources based on InAs/InGaAs metamorphic quantum dots,” J. Appl. Phys. 119(14), 143102 (2016).
[Crossref]
C. C. Hou, H. M. Chen, J. C. Zhang, N. Zhuo, Y. Q. Huang, R. A. Hogg, D. Childs, J. Q. Ning, Z. G. Wang, F. Q. Liu, and Z. Y. Zhang, “Near-infrared and mid-infrared semiconductor broadband light emitters,” Light: Sci. Appl. 7(3), 17170 (2018).
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J. M. Liu, Y. Chen, Y. Li, H. Zhang, S. Q. Zheng, and S. X. Xu, “Switchable dual-wavelength Q-switched fiber laser using multilayer black phosphorus as a saturable absorber,” Photonics Res. 6(3), 198–203 (2018).
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X. H. Li, Y. G. Wang, Y. Wang, W. Zhao, X. Yu, Z. Sun, X. Cheng, X. Yu, Y. Zhang, and Q. Wang, “Nonlinear absorption of SWNT film and its effects to the operation state of pulsed fiber laser,” Opt. Express 22(14), 17227–17235 (2014).
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C. C. Hou, H. M. Chen, J. C. Zhang, N. Zhuo, Y. Q. Huang, R. A. Hogg, D. Childs, J. Q. Ning, Z. G. Wang, F. Q. Liu, and Z. Y. Zhang, “Near-infrared and mid-infrared semiconductor broadband light emitters,” Light: Sci. Appl. 7(3), 17170 (2018).
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M. Richter, B. Damilano, J. Massies, J. Y. Duboz, and A. D. Wieck, “InAs/In0.15Ga0.85As1-xNx quantum dots for 1.5 µm laser applications,” Mater. Res. Soc. Symp. Proc. 891, 0891-EE03-29 (2005).
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J. Wu, D. Shao, V. G. Dorogan, A. Z. Li, S. Li, E. A. DeCuir, M. O. Manasreh, Z. M. Wang, Y. I. Mazur, and G. J. Salamo, “Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy,” Nano Lett. 10(4), 1512–1516 (2010).
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A. P. Luo, Z. C. Luo, W. C. Xu, V. V. Dvoyrin, V. M. Mashinsky, and E. Dianov, “Tunable and switchable dual wavelength passively mode-locked Bi-doped all-fiber ring laser based on nonlinear polarization rotation,” Laser Phys. Lett. 8(8), 601–605 (2011).
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Y. Liu, K. Zhong, J. L. Mei, C. Liu, J. Shi, X. Ding, D. G. Xu, W. Shi, and J. Q. Yao, “Compact and stable high-repetition-rate terahertz generation based on an efficient coaxially pumped dual-wavelength laser,” Opt. Express 25(25), 31988–31996 (2017).
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J. Wu, D. Shao, V. G. Dorogan, A. Z. Li, S. Li, E. A. DeCuir, M. O. Manasreh, Z. M. Wang, Y. I. Mazur, and G. J. Salamo, “Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy,” Nano Lett. 10(4), 1512–1516 (2010).
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M. Richter, B. Damilano, J. Massies, J. Y. Duboz, and A. D. Wieck, “InAs/In0.15Ga0.85As1-xNx quantum dots for 1.5 µm laser applications,” Mater. Res. Soc. Symp. Proc. 891, 0891-EE03-29 (2005).
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A. P. Luo, Z. C. Luo, W. C. Xu, V. V. Dvoyrin, V. M. Mashinsky, and E. Dianov, “Tunable and switchable dual wavelength passively mode-locked Bi-doped all-fiber ring laser based on nonlinear polarization rotation,” Laser Phys. Lett. 8(8), 601–605 (2011).
[Crossref]
T. Akiyama, M. Ekawa, M. Sugawara, K. Kawaguchi, H. Sudo, H. Kuwatsuka, H. Ebe, A. Kuramata, and Y. Arakawa, “Quantum dots for semiconductor optical amplifiers,” in Optical Fiber Communication Conference, 2005 OSA Technical Digest (CD) (Optical Society of America, 2005), paper OWM2.
E. S. Semenova, A. E. Zhukov, S. S. Mikhrin, A. Y. Egorov, V. A. Odnoblyudov, A. P. Vasil’ev, E. V. Nikitina, A. R. Kovsh, N. V. Kryzhanovskaya, A. G. Gladyshev, S. A. Blokhin, Y. G. Musikhin, M. V. Maximov, Y. M. Shernyakov, V. M. Ustinov, and N. N. Ledentsov, “Metamorphic growth for application in long-wavelength (1.3–1.55 µm) lasers and MODFET- type structures on GaAs substrates,” Nanotechnology 15(4), S283–S287 (2004).
[Crossref]
T. Akiyama, M. Ekawa, M. Sugawara, K. Kawaguchi, H. Sudo, H. Kuwatsuka, H. Ebe, A. Kuramata, and Y. Arakawa, “Quantum dots for semiconductor optical amplifiers,” in Optical Fiber Communication Conference, 2005 OSA Technical Digest (CD) (Optical Society of America, 2005), paper OWM2.
M. D. Sánchez, E. A. Kuzin, O. Pottiez, B. I. Escamilla, A. G. García, F. M. Ordoñez, R. I. Á. Tamayo, and A. F. Rosas, “Tunable dual-wavelength actively Q-switched Er/Yb double-clad fiber laser,” Laser Phys. Lett. 11(1), 015102 (2014).
[Crossref]
Z. C. Luo, A. P. Luo, W. C. Xu, H. S. Yin, J. R. Liu, Q. Ye, and Z. J. Fang, “Tunable multiwavelength passively mode locked fiber ring laser using intracavity birefringence-induced comb filter,” IEEE Photonics J. 2(4), 571–577 (2010).
[Crossref]
C. Scurtescu, Z. Y. Zhang, J. Alcock, R. Fedosejevs, M. Blumin, I. Saveliev, S. Yang, H. Ruda, and Y. Y. Tsui, “Quantum dot saturable absorber for passive mode locking of Nd:YVO4 lasers at 1064 nm,” Appl. Phys. B: Lasers Opt. 87(4), 671–675 (2007).
[Crossref]
Z. Y. Zhang, C. Scurtescu, M. T. Taschuk, Y. Y. Tsui, and R. Fedosejevs, “GaAs based semiconductor quantum dot saturable absorber mirror grown by molecular beam epitaxy,” Proc. SPIE 6343, 63432N (2006).
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C. Wang, L. Wang, X. H. Li, W. F. Luo, T. Feng, Y. Zhang, P. Guo, and Y. Ge, “Few-layer bismuthene for femtosecond soliton molecules generation in Er-doped fiber laser,” Nanotechnology 30(2), 025204 (2019).
[Crossref]
L. Seravalli, P. Frigeri, G. Trevisi, and S. Franchi, “1.59 µm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates,” Appl. Phys. Lett. 92(21), 213104 (2008).
[Crossref]
A. Bosacchi, P. Frigeri, S. Franchi, P. Allegri, and V. Avanzini, “InAs/GaAs self-assembled quantum dots grown by ALMBE and MBE,” J. Cryst. Growth 175-176, 771–776 (1997).
[Crossref]
L. Seravalli, M. Gioannini, F. Cappelluti, F. Sacconi, G. Trevisi, and P. Frigeri, “Broadband light sources based on InAs/InGaAs metamorphic quantum dots,” J. Appl. Phys. 119(14), 143102 (2016).
[Crossref]
G. M. Matutano, D. Barrera, C. R. F. Pousa, R. C. Jordan, L. Seravalli, G. Trevisi, P. Frigeri, S. Sales, and J. M. Pastor, “All-Optical Fiber Hanbury Brown & Twiss Interferometer to study 1300 nm single photon emission of a metamorphic InAs Quantum Dot,” Sci. Rep. 6(1), 27214 (2016).
[Crossref]
L. Seravalli, P. Frigeri, L. Nasi, G. Trevisi, and C. Bocchi, “Metamorphic quantum dots: Quite different nanostructures,” J. Appl. Phys. 108(6), 064324 (2010).
[Crossref]
L. Seravalli, P. Frigeri, G. Trevisi, and S. Franchi, “1.59 µm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates,” Appl. Phys. Lett. 92(21), 213104 (2008).
[Crossref]
A. Bosacchi, P. Frigeri, S. Franchi, P. Allegri, and V. Avanzini, “InAs/GaAs self-assembled quantum dots grown by ALMBE and MBE,” J. Cryst. Growth 175-176, 771–776 (1997).
[Crossref]
M. D. Sánchez, E. A. Kuzin, O. Pottiez, B. I. Escamilla, A. G. García, F. M. Ordoñez, R. I. Á. Tamayo, and A. F. Rosas, “Tunable dual-wavelength actively Q-switched Er/Yb double-clad fiber laser,” Laser Phys. Lett. 11(1), 015102 (2014).
[Crossref]
C. Wang, L. Wang, X. H. Li, W. F. Luo, T. Feng, Y. Zhang, P. Guo, and Y. Ge, “Few-layer bismuthene for femtosecond soliton molecules generation in Er-doped fiber laser,” Nanotechnology 30(2), 025204 (2019).
[Crossref]
L. Seravalli, M. Gioannini, F. Cappelluti, F. Sacconi, G. Trevisi, and P. Frigeri, “Broadband light sources based on InAs/InGaAs metamorphic quantum dots,” J. Appl. Phys. 119(14), 143102 (2016).
[Crossref]
E. S. Semenova, A. E. Zhukov, S. S. Mikhrin, A. Y. Egorov, V. A. Odnoblyudov, A. P. Vasil’ev, E. V. Nikitina, A. R. Kovsh, N. V. Kryzhanovskaya, A. G. Gladyshev, S. A. Blokhin, Y. G. Musikhin, M. V. Maximov, Y. M. Shernyakov, V. M. Ustinov, and N. N. Ledentsov, “Metamorphic growth for application in long-wavelength (1.3–1.55 µm) lasers and MODFET- type structures on GaAs substrates,” Nanotechnology 15(4), S283–S287 (2004).
[Crossref]
Y. Sun, Y. Bai, D. Li, L. Hou, B. Bai, Y. Gong, L. Yu, and J. Bai, “946 nm Nd:YAG double Q-switched laser based on monolayer WSe2 saturable absorber,” Opt. Express 25(18), 21312 (2017).
[Crossref]
J. M. Ripalda, D. Granados, and S. I. Molina, “Room temperature emission at 1.6 µm from InGaAs quantum dots capped with GaAsSb,” Appl. Phys. Lett. 87(20), 202108 (2005).
[Crossref]
C. Wang, L. Wang, X. H. Li, W. F. Luo, T. Feng, Y. Zhang, P. Guo, and Y. Ge, “Few-layer bismuthene for femtosecond soliton molecules generation in Er-doped fiber laser,” Nanotechnology 30(2), 025204 (2019).
[Crossref]
Z. Hui, W. Xu, X. Li, P. Guo, Y. Zhang, and J. Liu, “Cu2S nanosheets for ultrashort pulse generation in the near-infrared region,” Nanoscale 11(13), 6045–6051 (2019).
[Crossref]
Y. Zhao, P. L. Guo, X. H. Li, and Z. W. Jin, “Ultrafast photonics application of graphdiyne in optical communication region,” Carbon 149, 336–341 (2019).
[Crossref]
Y. X. Guo, X. H. Li, P. L. Guo, and H. R. Zheng, “Supercontinuum generation in an er-doped figure-eight passively mode-locked fiber laser,” Opt. Express 26(8), 9893–9900 (2018).
[Crossref]
I. S. Han, J. S. Kim, J. O. Kim, S. K. Noh, and S. J. Lee, “Fabrication and characterization of InAs/InGaAs sub-monolayer quantum dot solar cell with dot-in-a-well structure,” Curr. Appl. Phys. 16(5), 587–592 (2016).
[Crossref]
M. B. S. Sabran, Z. Jusoh, I. M. Babar, H. Ahmad, and S. W. Harun, “Dual-wavelength passively Q-switched erbium ytterbium codoped fiber laser based on a nonlinear polarization rotation technique,” Microw. Opt. Technol. Lett. 57(3), 530–533 (2015).
[Crossref]
C. C. Hou, H. M. Chen, J. C. Zhang, N. Zhuo, Y. Q. Huang, R. A. Hogg, D. Childs, J. Q. Ning, Z. G. Wang, F. Q. Liu, and Z. Y. Zhang, “Near-infrared and mid-infrared semiconductor broadband light emitters,” Light: Sci. Appl. 7(3), 17170 (2018).
[Crossref]
Z. Y. Zhang, A. E. Oehler, B. Resan, S. Kurmulis, K. J. Zhou, Q. Wang, M. Mangold, T. Süedmeyer, U. Keller, K. J. Weingarten, and R. A. Hogg, “1.55 µm InAs/GaAs quantum dots and high repetition rate quantum dot SESAM mode-locked laser,” Sci. Rep. 2(1), 477 (2012).
[Crossref]
Z. Y. Zhang, R. A. Hogg, X. Q. Lv, and Z. G. Wang, “Self-assembled quantum-dot superluminescent light-emitting diodes,” Adv. Opt. Photonics 2(2), 201–228 (2010).
[Crossref]
E. S. Semenova, R. Hostein, G. Patriache, O. Mauguin, L. Largeau, I. R. Philip, A. Beveratos, and A. Lemaite, “Metamorphic approach to single quantum dot emission at 1.55 µm on GaAs substrate,” J. Appl. Phys. 103(10), 103533 (2008).
[Crossref]
C. C. Hou, H. M. Chen, J. C. Zhang, N. Zhuo, Y. Q. Huang, R. A. Hogg, D. Childs, J. Q. Ning, Z. G. Wang, F. Q. Liu, and Z. Y. Zhang, “Near-infrared and mid-infrared semiconductor broadband light emitters,” Light: Sci. Appl. 7(3), 17170 (2018).
[Crossref]
Y. Sun, Y. Bai, D. Li, L. Hou, B. Bai, Y. Gong, L. Yu, and J. Bai, “946 nm Nd:YAG double Q-switched laser based on monolayer WSe2 saturable absorber,” Opt. Express 25(18), 21312 (2017).
[Crossref]
C. C. Hou, H. M. Chen, J. C. Zhang, N. Zhuo, Y. Q. Huang, R. A. Hogg, D. Childs, J. Q. Ning, Z. G. Wang, F. Q. Liu, and Z. Y. Zhang, “Near-infrared and mid-infrared semiconductor broadband light emitters,” Light: Sci. Appl. 7(3), 17170 (2018).
[Crossref]
Z. Hui, W. Xu, X. Li, P. Guo, Y. Zhang, and J. Liu, “Cu2S nanosheets for ultrashort pulse generation in the near-infrared region,” Nanoscale 11(13), 6045–6051 (2019).
[Crossref]
H. Ahmad, M. Z. Samion, A. S. Sharbirin, and M. F. Ismail, “Dual-wavelength, passively Q-switched thulium-doped fiber laser with n-doped graphene saturable absorber,” Optik 149, 391–397 (2017).
[Crossref]
G. Y. Zhou, Y. H. Chen, J. L. Yu, X. L. Zhou, X. L. Ye, P. Jin, and Z. G. Wang, “The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing,” Appl. Phys. Lett. 98(7), 071914 (2011).
[Crossref]
J. Sun, P. Jin, and Z. G. Wang, “Extremely low density InAs quantum dots realized in situ on (100) GaAs,” Nanotechnology 15(12), 1763–1766 (2004).
[Crossref]
Y. Zhao, P. L. Guo, X. H. Li, and Z. W. Jin, “Ultrafast photonics application of graphdiyne in optical communication region,” Carbon 149, 336–341 (2019).
[Crossref]
G. M. Matutano, D. Barrera, C. R. F. Pousa, R. C. Jordan, L. Seravalli, G. Trevisi, P. Frigeri, S. Sales, and J. M. Pastor, “All-Optical Fiber Hanbury Brown & Twiss Interferometer to study 1300 nm single photon emission of a metamorphic InAs Quantum Dot,” Sci. Rep. 6(1), 27214 (2016).
[Crossref]
M. B. S. Sabran, Z. Jusoh, I. M. Babar, H. Ahmad, and S. W. Harun, “Dual-wavelength passively Q-switched erbium ytterbium codoped fiber laser based on a nonlinear polarization rotation technique,” Microw. Opt. Technol. Lett. 57(3), 530–533 (2015).
[Crossref]
T. Akiyama, M. Ekawa, M. Sugawara, K. Kawaguchi, H. Sudo, H. Kuwatsuka, H. Ebe, A. Kuramata, and Y. Arakawa, “Quantum dots for semiconductor optical amplifiers,” in Optical Fiber Communication Conference, 2005 OSA Technical Digest (CD) (Optical Society of America, 2005), paper OWM2.
Z. Y. Zhang, A. E. Oehler, B. Resan, S. Kurmulis, K. J. Zhou, Q. Wang, M. Mangold, T. Süedmeyer, U. Keller, K. J. Weingarten, and R. A. Hogg, “1.55 µm InAs/GaAs quantum dots and high repetition rate quantum dot SESAM mode-locked laser,” Sci. Rep. 2(1), 477 (2012).
[Crossref]
I. S. Han, J. S. Kim, J. O. Kim, S. K. Noh, and S. J. Lee, “Fabrication and characterization of InAs/InGaAs sub-monolayer quantum dot solar cell with dot-in-a-well structure,” Curr. Appl. Phys. 16(5), 587–592 (2016).
[Crossref]
I. S. Han, J. S. Kim, J. O. Kim, S. K. Noh, and S. J. Lee, “Fabrication and characterization of InAs/InGaAs sub-monolayer quantum dot solar cell with dot-in-a-well structure,” Curr. Appl. Phys. 16(5), 587–592 (2016).
[Crossref]
E. S. Semenova, A. E. Zhukov, S. S. Mikhrin, A. Y. Egorov, V. A. Odnoblyudov, A. P. Vasil’ev, E. V. Nikitina, A. R. Kovsh, N. V. Kryzhanovskaya, A. G. Gladyshev, S. A. Blokhin, Y. G. Musikhin, M. V. Maximov, Y. M. Shernyakov, V. M. Ustinov, and N. N. Ledentsov, “Metamorphic growth for application in long-wavelength (1.3–1.55 µm) lasers and MODFET- type structures on GaAs substrates,” Nanotechnology 15(4), S283–S287 (2004).
[Crossref]
N. N. Ledentsov, A. R. Kovsh, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, A. P. Vasil’ev, E. S. Semenova, M. V. Maximov, Y. M. Shernyakov, N. V. Kryzhanovskaya, V. M. Ustinov, and D. Bimberg, “High performance quantum dot lasers on GaAs substrates operating in 1.5 µm range,” Electron. Lett. 39(15), 1126–1128 (2003).
[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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Z. Y. Zhang, C. Scurtescu, M. T. Taschuk, Y. Y. Tsui, and R. Fedosejevs, “GaAs based semiconductor quantum dot saturable absorber mirror grown by molecular beam epitaxy,” Proc. SPIE 6343, 63432N (2006).
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[Crossref]
H. Ahmad, M. Z. Samion, A. S. Sharbirin, and M. F. Ismail, “Dual-wavelength, passively Q-switched thulium-doped fiber laser with n-doped graphene saturable absorber,” Optik 149, 391–397 (2017).
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L. Liu, Z. Zheng, X. Zhao, S. Sun, Y. Bian, Y. Su, J. Liu, and J. Zhu, “Dual-wavelength passively Q-switched Erbium doped fiber laser based on an SWNT saturable absorber,” Opt. Commun. 294, 267–270 (2013).
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Y. Sun, Y. Bai, D. Li, L. Hou, B. Bai, Y. Gong, L. Yu, and J. Bai, “946 nm Nd:YAG double Q-switched laser based on monolayer WSe2 saturable absorber,” Opt. Express 25(18), 21312 (2017).
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X. H. Li, Y. G. Wang, Y. Wang, W. Zhao, X. Yu, Z. Sun, X. Cheng, X. Yu, Y. Zhang, and Q. Wang, “Nonlinear absorption of SWNT film and its effects to the operation state of pulsed fiber laser,” Opt. Express 22(14), 17227–17235 (2014).
[Crossref]
M. D. Sánchez, E. A. Kuzin, O. Pottiez, B. I. Escamilla, A. G. García, F. M. Ordoñez, R. I. Á. Tamayo, and A. F. Rosas, “Tunable dual-wavelength actively Q-switched Er/Yb double-clad fiber laser,” Laser Phys. Lett. 11(1), 015102 (2014).
[Crossref]
Z. Y. Zhang, C. Scurtescu, M. T. Taschuk, Y. Y. Tsui, and R. Fedosejevs, “GaAs based semiconductor quantum dot saturable absorber mirror grown by molecular beam epitaxy,” Proc. SPIE 6343, 63432N (2006).
[Crossref]
G. M. Matutano, D. Barrera, C. R. F. Pousa, R. C. Jordan, L. Seravalli, G. Trevisi, P. Frigeri, S. Sales, and J. M. Pastor, “All-Optical Fiber Hanbury Brown & Twiss Interferometer to study 1300 nm single photon emission of a metamorphic InAs Quantum Dot,” Sci. Rep. 6(1), 27214 (2016).
[Crossref]
L. Seravalli, M. Gioannini, F. Cappelluti, F. Sacconi, G. Trevisi, and P. Frigeri, “Broadband light sources based on InAs/InGaAs metamorphic quantum dots,” J. Appl. Phys. 119(14), 143102 (2016).
[Crossref]
L. Seravalli, P. Frigeri, L. Nasi, G. Trevisi, and C. Bocchi, “Metamorphic quantum dots: Quite different nanostructures,” J. Appl. Phys. 108(6), 064324 (2010).
[Crossref]
L. Seravalli, P. Frigeri, G. Trevisi, and S. Franchi, “1.59 µm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates,” Appl. Phys. Lett. 92(21), 213104 (2008).
[Crossref]
C. Scurtescu, Z. Y. Zhang, J. Alcock, R. Fedosejevs, M. Blumin, I. Saveliev, S. Yang, H. Ruda, and Y. Y. Tsui, “Quantum dot saturable absorber for passive mode locking of Nd:YVO4 lasers at 1064 nm,” Appl. Phys. B: Lasers Opt. 87(4), 671–675 (2007).
[Crossref]
Z. Y. Zhang, C. Scurtescu, M. T. Taschuk, Y. Y. Tsui, and R. Fedosejevs, “GaAs based semiconductor quantum dot saturable absorber mirror grown by molecular beam epitaxy,” Proc. SPIE 6343, 63432N (2006).
[Crossref]
E. S. Semenova, A. E. Zhukov, S. S. Mikhrin, A. Y. Egorov, V. A. Odnoblyudov, A. P. Vasil’ev, E. V. Nikitina, A. R. Kovsh, N. V. Kryzhanovskaya, A. G. Gladyshev, S. A. Blokhin, Y. G. Musikhin, M. V. Maximov, Y. M. Shernyakov, V. M. Ustinov, and N. N. Ledentsov, “Metamorphic growth for application in long-wavelength (1.3–1.55 µm) lasers and MODFET- type structures on GaAs substrates,” Nanotechnology 15(4), S283–S287 (2004).
[Crossref]
N. N. Ledentsov, A. R. Kovsh, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, A. P. Vasil’ev, E. S. Semenova, M. V. Maximov, Y. M. Shernyakov, N. V. Kryzhanovskaya, V. M. Ustinov, and D. Bimberg, “High performance quantum dot lasers on GaAs substrates operating in 1.5 µm range,” Electron. Lett. 39(15), 1126–1128 (2003).
[Crossref]
E. S. Semenova, A. E. Zhukov, S. S. Mikhrin, A. Y. Egorov, V. A. Odnoblyudov, A. P. Vasil’ev, E. V. Nikitina, A. R. Kovsh, N. V. Kryzhanovskaya, A. G. Gladyshev, S. A. Blokhin, Y. G. Musikhin, M. V. Maximov, Y. M. Shernyakov, V. M. Ustinov, and N. N. Ledentsov, “Metamorphic growth for application in long-wavelength (1.3–1.55 µm) lasers and MODFET- type structures on GaAs substrates,” Nanotechnology 15(4), S283–S287 (2004).
[Crossref]
N. N. Ledentsov, A. R. Kovsh, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, A. P. Vasil’ev, E. S. Semenova, M. V. Maximov, Y. M. Shernyakov, N. V. Kryzhanovskaya, V. M. Ustinov, and D. Bimberg, “High performance quantum dot lasers on GaAs substrates operating in 1.5 µm range,” Electron. Lett. 39(15), 1126–1128 (2003).
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C. Wang, L. Wang, X. H. Li, W. F. Luo, T. Feng, Y. Zhang, P. Guo, and Y. Ge, “Few-layer bismuthene for femtosecond soliton molecules generation in Er-doped fiber laser,” Nanotechnology 30(2), 025204 (2019).
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C. Wang, L. Wang, X. H. Li, W. F. Luo, T. Feng, Y. Zhang, P. Guo, and Y. Ge, “Few-layer bismuthene for femtosecond soliton molecules generation in Er-doped fiber laser,” Nanotechnology 30(2), 025204 (2019).
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X. H. Li, Y. G. Wang, Y. Wang, W. Zhao, X. Yu, Z. Sun, X. Cheng, X. Yu, Y. Zhang, and Q. Wang, “Nonlinear absorption of SWNT film and its effects to the operation state of pulsed fiber laser,” Opt. Express 22(14), 17227–17235 (2014).
[Crossref]
Z. Y. Zhang, A. E. Oehler, B. Resan, S. Kurmulis, K. J. Zhou, Q. Wang, M. Mangold, T. Süedmeyer, U. Keller, K. J. Weingarten, and R. A. Hogg, “1.55 µm InAs/GaAs quantum dots and high repetition rate quantum dot SESAM mode-locked laser,” Sci. Rep. 2(1), 477 (2012).
[Crossref]
X. H. Li, Y. G. Wang, Y. Wang, W. Zhao, X. Yu, Z. Sun, X. Cheng, X. Yu, Y. Zhang, and Q. Wang, “Nonlinear absorption of SWNT film and its effects to the operation state of pulsed fiber laser,” Opt. Express 22(14), 17227–17235 (2014).
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C. C. Hou, H. M. Chen, J. C. Zhang, N. Zhuo, Y. Q. Huang, R. A. Hogg, D. Childs, J. Q. Ning, Z. G. Wang, F. Q. Liu, and Z. Y. Zhang, “Near-infrared and mid-infrared semiconductor broadband light emitters,” Light: Sci. Appl. 7(3), 17170 (2018).
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G. Y. Zhou, Y. H. Chen, J. L. Yu, X. L. Zhou, X. L. Ye, P. Jin, and Z. G. Wang, “The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing,” Appl. Phys. Lett. 98(7), 071914 (2011).
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Z. Y. Zhang, R. A. Hogg, X. Q. Lv, and Z. G. Wang, “Self-assembled quantum-dot superluminescent light-emitting diodes,” Adv. Opt. Photonics 2(2), 201–228 (2010).
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J. Sun, P. Jin, and Z. G. Wang, “Extremely low density InAs quantum dots realized in situ on (100) GaAs,” Nanotechnology 15(12), 1763–1766 (2004).
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Y. Liu, K. Zhong, J. L. Mei, C. Liu, J. Shi, X. Ding, D. G. Xu, W. Shi, and J. Q. Yao, “Compact and stable high-repetition-rate terahertz generation based on an efficient coaxially pumped dual-wavelength laser,” Opt. Express 25(25), 31988–31996 (2017).
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J. M. Liu, Y. Chen, Y. Li, H. Zhang, S. Q. Zheng, and S. X. Xu, “Switchable dual-wavelength Q-switched fiber laser using multilayer black phosphorus as a saturable absorber,” Photonics Res. 6(3), 198–203 (2018).
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Z. Hui, W. Xu, X. Li, P. Guo, Y. Zhang, and J. Liu, “Cu2S nanosheets for ultrashort pulse generation in the near-infrared region,” Nanoscale 11(13), 6045–6051 (2019).
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[Crossref]
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[Crossref]
Z. C. Luo, A. P. Luo, W. C. Xu, H. S. Yin, J. R. Liu, Q. Ye, and Z. J. Fang, “Tunable multiwavelength passively mode locked fiber ring laser using intracavity birefringence-induced comb filter,” IEEE Photonics J. 2(4), 571–577 (2010).
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[Crossref]
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G. Y. Zhou, Y. H. Chen, J. L. Yu, X. L. Zhou, X. L. Ye, P. Jin, and Z. G. Wang, “The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing,” Appl. Phys. Lett. 98(7), 071914 (2011).
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Y. Sun, Y. Bai, D. Li, L. Hou, B. Bai, Y. Gong, L. Yu, and J. Bai, “946 nm Nd:YAG double Q-switched laser based on monolayer WSe2 saturable absorber,” Opt. Express 25(18), 21312 (2017).
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[Crossref]
X. H. Li, Y. G. Wang, Y. Wang, W. Zhao, X. Yu, Z. Sun, X. Cheng, X. Yu, Y. Zhang, and Q. Wang, “Nonlinear absorption of SWNT film and its effects to the operation state of pulsed fiber laser,” Opt. Express 22(14), 17227–17235 (2014).
[Crossref]
J. M. Liu, Y. Chen, Y. Li, H. Zhang, S. Q. Zheng, and S. X. Xu, “Switchable dual-wavelength Q-switched fiber laser using multilayer black phosphorus as a saturable absorber,” Photonics Res. 6(3), 198–203 (2018).
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J. Liu, Z. Guo, H. Zhang, W. Ma, J. Wang, and L. Su, “Dual-wavelength Q-switched Er:SrF2 laser with a black phosphorus absorber in the mid-infrared region,” Opt. Express 24(26), 30289–30295 (2016).
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C. C. Hou, H. M. Chen, J. C. Zhang, N. Zhuo, Y. Q. Huang, R. A. Hogg, D. Childs, J. Q. Ning, Z. G. Wang, F. Q. Liu, and Z. Y. Zhang, “Near-infrared and mid-infrared semiconductor broadband light emitters,” Light: Sci. Appl. 7(3), 17170 (2018).
[Crossref]
C. Wang, L. Wang, X. H. Li, W. F. Luo, T. Feng, Y. Zhang, P. Guo, and Y. Ge, “Few-layer bismuthene for femtosecond soliton molecules generation in Er-doped fiber laser,” Nanotechnology 30(2), 025204 (2019).
[Crossref]
Z. Hui, W. Xu, X. Li, P. Guo, Y. Zhang, and J. Liu, “Cu2S nanosheets for ultrashort pulse generation in the near-infrared region,” Nanoscale 11(13), 6045–6051 (2019).
[Crossref]
X. H. Li, Y. G. Wang, Y. Wang, W. Zhao, X. Yu, Z. Sun, X. Cheng, X. Yu, Y. Zhang, and Q. Wang, “Nonlinear absorption of SWNT film and its effects to the operation state of pulsed fiber laser,” Opt. Express 22(14), 17227–17235 (2014).
[Crossref]
C. C. Hou, H. M. Chen, J. C. Zhang, N. Zhuo, Y. Q. Huang, R. A. Hogg, D. Childs, J. Q. Ning, Z. G. Wang, F. Q. Liu, and Z. Y. Zhang, “Near-infrared and mid-infrared semiconductor broadband light emitters,” Light: Sci. Appl. 7(3), 17170 (2018).
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Z. Y. Zhang, A. E. Oehler, B. Resan, S. Kurmulis, K. J. Zhou, Q. Wang, M. Mangold, T. Süedmeyer, U. Keller, K. J. Weingarten, and R. A. Hogg, “1.55 µm InAs/GaAs quantum dots and high repetition rate quantum dot SESAM mode-locked laser,” Sci. Rep. 2(1), 477 (2012).
[Crossref]
Z. Y. Zhang, R. A. Hogg, X. Q. Lv, and Z. G. Wang, “Self-assembled quantum-dot superluminescent light-emitting diodes,” Adv. Opt. Photonics 2(2), 201–228 (2010).
[Crossref]
C. Scurtescu, Z. Y. Zhang, J. Alcock, R. Fedosejevs, M. Blumin, I. Saveliev, S. Yang, H. Ruda, and Y. Y. Tsui, “Quantum dot saturable absorber for passive mode locking of Nd:YVO4 lasers at 1064 nm,” Appl. Phys. B: Lasers Opt. 87(4), 671–675 (2007).
[Crossref]
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