Abstract

The optical properties of hexagonal GaN microdisk arrays grown on sapphire substrates by selective area growth (SAG) technique were investigated both experimentally and theoretically. Whispering-gallery-mode (WGM) lasing is observed from various directions of the GaN pyramids collected at room temperature, with the dominant lasing mode being Transverse-Electric (TE) polarized. A relaxation of compressive strain in the lateral overgrown region of the GaN microdisk is illustrated by photoluminescence (PL) mapping and Raman spectroscopy. A strong correlation between the crystalline quality and lasing behavior of the GaN microdisks was also demonstrated.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref] [PubMed]
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    [Crossref] [PubMed]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  29. W. Tawfik, J. Song, J. J. Lee, J. S. Ha, S.-W. Ryu, H. S. Choi, B. Ryu, and J. K. Lee, “Effect of external tensile stress on blue InGaN/GaN multi-quantum-well light-emitting diodes,” Appl. Surf. Sci. 283(14), 727–731 (2013).
    [Crossref]
  30. Q. Li and G. T. Wang, “Spatial distribution of defect luminescence in GaN nanowires,” Nano Lett. 10(5), 1554–1558 (2010).
    [Crossref] [PubMed]
  31. P. Reddy, M. P. Hoffmann, F. Kaess, Z. Bryan, I. Bryan, M. Bobea, A. Klump, J. Tweedie, R. Kirste, S. Mita, M. Gerhold, R. Collazo, and Z. Sitar, “Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control,” J. Appl. Phys. 120(18), 185704 (2016).
    [Crossref]

2018 (7)

W. Guo, J. Li, M. Sheikhi, J. Jiang, Z. Yang, H. Li, S. Guo, J. Sheng, J. Sun, B. Bo, and J. Ye, “Comparative study on luminescence extraction strategies of LED by large-scale fabrication of nanopillar and nanohole structures,” J. Phys. D Appl. Phys. 51(24), 24LT01 (2018).
[Crossref]

C.-Y. Huang, T.-Y. Tai, J.-J. Lin, T.-C. Chang, C.-Y. Liu, T.-C. Lu, Y.-R. Wu, and H.-C. Kuo, “Mode-Hopping Phenomena in the InGaN-Based Core–Shell Nanorod Array Collective Lasing,” ACS Photonics 5(7), 2724–2729 (2018).
[Crossref]

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, R. Lin, A. Giugni, E. Di Fabrizio, X. Li, and J. Ye, “Lateral-Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence,” Adv. Funct. Mater. 28(32), 1802395 (2018).
[Crossref]

Z. Li, M. Jiang, Y. Sun, Z. Zhang, B. Li, H. Zhao, C. Shan, and D. Shen, “Electrically pumped Fabry-Perot microlasers from single Ga-doped ZnO microbelt based heterostructure diodes,” Nanoscale 10(39), 18774–18785 (2018).
[Crossref] [PubMed]

G. Wang, X. Yi, L. Wang, P. Li, L. Liu, H. Li, and Y. Zhang, “UV-C whispering-gallery modes in AlN microdisks with AlGaN-based multiple quantum wells on Si substrate,” J. Nanophotonics 12, 1 (2018).

J. Mickevičius, T. Grinys, A. Kadys, and G. Tamulaitis, “Optimization of growing green-emitting InGaN/GaN multiple quantum wells on stress-relieving superlattices,” Opt. Mater. 82, 71–74 (2018).
[Crossref]

M. Feng, J. He, Q. Sun, H. Gao, Z. Li, Y. Zhou, J. Liu, S. Zhang, D. Li, L. Zhang, X. Sun, D. Li, H. Wang, M. Ikeda, R. Wang, and H. Yang, “Room-temperature electrically pumped InGaN-based microdisk laser grown on Si,” Opt. Express 26(4), 5043–5051 (2018).
[Crossref] [PubMed]

2017 (3)

L. C. Wang, Y. Y. Zhang, R. Chen, Z. Q. Liu, J. Ma, Z. Li, X. Y. Yi, H. J. Li, J. X. Wang, G. H. Wang, W. H. Zhu, and J. M. Li, “Optically pumped lasing with a Q-factor exceeding 6000 from wet-etched GaN micro-pyramids,” Opt. Lett. 42(15), 2976–2979 (2017).
[Crossref] [PubMed]

S.-Y. Bae, K. Lekhal, H.-J. Lee, J.-W. Min, D.-S. Lee, Y. Honda, and H. Amano, “Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants,” Physica Status Solidi (b) 254, 1600722 (2017).

Y. Zhang, H. Li, P. Li, A. Dehzangi, L. Wang, X. Yi, and G. Wang, “Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si Substrate,” IEEE Photonics J. 9(5), 1–8 (2017).
[Crossref]

2016 (3)

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, S. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10(9), 595–599 (2016).
[Crossref]

P. Reddy, M. P. Hoffmann, F. Kaess, Z. Bryan, I. Bryan, M. Bobea, A. Klump, J. Tweedie, R. Kirste, S. Mita, M. Gerhold, R. Collazo, and Z. Sitar, “Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control,” J. Appl. Phys. 120(18), 185704 (2016).
[Crossref]

J. Méndez-Ramos, J. C. Ruiz-Morales, P. Acosta-Mora, and N. M. Khaidukov, “Infrared-light induced curing of photosensitive resins through photon up-conversion for novel cost-effective luminescent 3D-printing technology,” J. Mater. Chem. C Mater. Opt. Electron. Devices 4(4), 801–806 (2016).
[Crossref]

2015 (1)

M. Kushimoto, T. Tanikawa, Y. Honda, and H. Amano, “Optically pumped lasing properties of (1-101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates,” Appl. Phys. Express 8(2), 022702 (2015).
[Crossref]

2014 (3)

X. Zhang, Y. F. Cheung, Y. Zhang, and H. W. Choi, “Whispering-gallery mode lasing from optically free-standing InGaN microdisks,” Opt. Lett. 39(19), 5614–5617 (2014).
[Crossref] [PubMed]

W. Guo, Z. Bryan, J. Xie, R. Kirste, S. Mita, I. Bryan, L. Hussey, M. Bobea, B. Haidet, M. Gerhold, R. Collazo, and Z. Sitar, “Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates,” J. Appl. Phys. 115(10), 103108 (2014).
[Crossref]

H. Baek, J. K. Hyun, K. Chung, H. Oh, and G.-C. Yi, “Selective excitation of Fabry-Perot or whispering-gallery mode-type lasing in GaN microrods,” Appl. Phys. Lett. 105(20), 201108 (2014).
[Crossref]

2013 (3)

H. Baek, C. H. Lee, K. Chung, and G. C. Yi, “Epitaxial GaN microdisk lasers grown on graphene microdots,” Nano Lett. 13(6), 2782–2785 (2013).
[Crossref] [PubMed]

C. Tessarek, G. Sarau, M. Kiometzis, and S. Christiansen, “High quality factor whispering gallery modes from self-assembled hexagonal GaN rods grown by metal-organic vapor phase epitaxy,” Opt. Express 21(3), 2733–2740 (2013).
[Crossref] [PubMed]

W. Tawfik, J. Song, J. J. Lee, J. S. Ha, S.-W. Ryu, H. S. Choi, B. Ryu, and J. K. Lee, “Effect of external tensile stress on blue InGaN/GaN multi-quantum-well light-emitting diodes,” Appl. Surf. Sci. 283(14), 727–731 (2013).
[Crossref]

2012 (3)

W. Tian, W. Y. Yan, X. Hui, S. L. Li, Y. Y. Ding, Y. Li, Y. Tian, J. N. Dai, Y. Y. Fang, Z. H. Wu, C. H. Yu, and C. Q. Chen, “Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition,” J. Appl. Phys. 112(6), 063526 (2012).
[Crossref]

Y. T. Lin, T. W. Yeh, and P. D. Dapkus, “Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition,” Nanotechnology 23(46), 465601 (2012).
[Crossref] [PubMed]

J. R. Chang, S. P. Chang, Y. J. Li, Y. J. Cheng, K. P. Sou, J. K. Huang, H. C. Kuo, and C. Y. Chang, “Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars,” Appl. Phys. Lett. 100(26), 261103 (2012).
[Crossref]

2011 (2)

R. Chen, B. Ling, X. W. Sun, and H. D. Sun, “Room temperature excitonic whispering gallery mode lasing from high-quality hexagonal ZnO microdisks,” Adv. Mater. 23(19), 2199–2204 (2011).
[Crossref] [PubMed]

T. Kouno, K. Kishino, and M. Sakai, “Lasing Action on Whispering Gallery Mode of Self-Organized GaN Hexagonal Microdisk Crystal Fabricated by RF-Plasma-Assisted Molecular Beam Epitaxy,” IEEE J. Quantum Electron. 47(12), 1565–1570 (2011).
[Crossref]

2010 (2)

R. Koester, J. S. Hwang, C. Durand, Dle. S. Dang, and J. Eymery, “Self-assembled growth of catalyst-free GaN wires by metal-organic vapour phase epitaxy,” Nanotechnology 21(1), 015602 (2010).
[Crossref] [PubMed]

Q. Li and G. T. Wang, “Spatial distribution of defect luminescence in GaN nanowires,” Nano Lett. 10(5), 1554–1558 (2010).
[Crossref] [PubMed]

2009 (1)

S. Mita, R. Collazo, and Z. Sitar, “Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition,” J. Cryst. Growth 311(10), 3044–3048 (2009).
[Crossref]

2008 (1)

H. Yoshida, Y. Yamashita, M. Kuwabara, and H. Kan, “A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode,” Nat. Photonics 2(9), 551–554 (2008).
[Crossref]

2004 (1)

K. Nam, J. Li, M. Nakarmi, J. Lin, and H. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[Crossref]

Acosta-Mora, P.

J. Méndez-Ramos, J. C. Ruiz-Morales, P. Acosta-Mora, and N. M. Khaidukov, “Infrared-light induced curing of photosensitive resins through photon up-conversion for novel cost-effective luminescent 3D-printing technology,” J. Mater. Chem. C Mater. Opt. Electron. Devices 4(4), 801–806 (2016).
[Crossref]

Amano, H.

S.-Y. Bae, K. Lekhal, H.-J. Lee, J.-W. Min, D.-S. Lee, Y. Honda, and H. Amano, “Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants,” Physica Status Solidi (b) 254, 1600722 (2017).

M. Kushimoto, T. Tanikawa, Y. Honda, and H. Amano, “Optically pumped lasing properties of (1-101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates,” Appl. Phys. Express 8(2), 022702 (2015).
[Crossref]

Bae, S.-Y.

S.-Y. Bae, K. Lekhal, H.-J. Lee, J.-W. Min, D.-S. Lee, Y. Honda, and H. Amano, “Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants,” Physica Status Solidi (b) 254, 1600722 (2017).

Baek, H.

H. Baek, J. K. Hyun, K. Chung, H. Oh, and G.-C. Yi, “Selective excitation of Fabry-Perot or whispering-gallery mode-type lasing in GaN microrods,” Appl. Phys. Lett. 105(20), 201108 (2014).
[Crossref]

H. Baek, C. H. Lee, K. Chung, and G. C. Yi, “Epitaxial GaN microdisk lasers grown on graphene microdots,” Nano Lett. 13(6), 2782–2785 (2013).
[Crossref] [PubMed]

Bo, B.

W. Guo, J. Li, M. Sheikhi, J. Jiang, Z. Yang, H. Li, S. Guo, J. Sheng, J. Sun, B. Bo, and J. Ye, “Comparative study on luminescence extraction strategies of LED by large-scale fabrication of nanopillar and nanohole structures,” J. Phys. D Appl. Phys. 51(24), 24LT01 (2018).
[Crossref]

Bobea, M.

P. Reddy, M. P. Hoffmann, F. Kaess, Z. Bryan, I. Bryan, M. Bobea, A. Klump, J. Tweedie, R. Kirste, S. Mita, M. Gerhold, R. Collazo, and Z. Sitar, “Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control,” J. Appl. Phys. 120(18), 185704 (2016).
[Crossref]

W. Guo, Z. Bryan, J. Xie, R. Kirste, S. Mita, I. Bryan, L. Hussey, M. Bobea, B. Haidet, M. Gerhold, R. Collazo, and Z. Sitar, “Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates,” J. Appl. Phys. 115(10), 103108 (2014).
[Crossref]

Bryan, I.

P. Reddy, M. P. Hoffmann, F. Kaess, Z. Bryan, I. Bryan, M. Bobea, A. Klump, J. Tweedie, R. Kirste, S. Mita, M. Gerhold, R. Collazo, and Z. Sitar, “Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control,” J. Appl. Phys. 120(18), 185704 (2016).
[Crossref]

W. Guo, Z. Bryan, J. Xie, R. Kirste, S. Mita, I. Bryan, L. Hussey, M. Bobea, B. Haidet, M. Gerhold, R. Collazo, and Z. Sitar, “Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates,” J. Appl. Phys. 115(10), 103108 (2014).
[Crossref]

Bryan, Z.

P. Reddy, M. P. Hoffmann, F. Kaess, Z. Bryan, I. Bryan, M. Bobea, A. Klump, J. Tweedie, R. Kirste, S. Mita, M. Gerhold, R. Collazo, and Z. Sitar, “Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control,” J. Appl. Phys. 120(18), 185704 (2016).
[Crossref]

W. Guo, Z. Bryan, J. Xie, R. Kirste, S. Mita, I. Bryan, L. Hussey, M. Bobea, B. Haidet, M. Gerhold, R. Collazo, and Z. Sitar, “Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates,” J. Appl. Phys. 115(10), 103108 (2014).
[Crossref]

Chang, C. Y.

J. R. Chang, S. P. Chang, Y. J. Li, Y. J. Cheng, K. P. Sou, J. K. Huang, H. C. Kuo, and C. Y. Chang, “Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars,” Appl. Phys. Lett. 100(26), 261103 (2012).
[Crossref]

Chang, J. R.

J. R. Chang, S. P. Chang, Y. J. Li, Y. J. Cheng, K. P. Sou, J. K. Huang, H. C. Kuo, and C. Y. Chang, “Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars,” Appl. Phys. Lett. 100(26), 261103 (2012).
[Crossref]

Chang, S. P.

J. R. Chang, S. P. Chang, Y. J. Li, Y. J. Cheng, K. P. Sou, J. K. Huang, H. C. Kuo, and C. Y. Chang, “Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars,” Appl. Phys. Lett. 100(26), 261103 (2012).
[Crossref]

Chang, T.-C.

C.-Y. Huang, T.-Y. Tai, J.-J. Lin, T.-C. Chang, C.-Y. Liu, T.-C. Lu, Y.-R. Wu, and H.-C. Kuo, “Mode-Hopping Phenomena in the InGaN-Based Core–Shell Nanorod Array Collective Lasing,” ACS Photonics 5(7), 2724–2729 (2018).
[Crossref]

Chen, C. Q.

W. Tian, W. Y. Yan, X. Hui, S. L. Li, Y. Y. Ding, Y. Li, Y. Tian, J. N. Dai, Y. Y. Fang, Z. H. Wu, C. H. Yu, and C. Q. Chen, “Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition,” J. Appl. Phys. 112(6), 063526 (2012).
[Crossref]

Chen, R.

Cheng, Y. J.

J. R. Chang, S. P. Chang, Y. J. Li, Y. J. Cheng, K. P. Sou, J. K. Huang, H. C. Kuo, and C. Y. Chang, “Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars,” Appl. Phys. Lett. 100(26), 261103 (2012).
[Crossref]

Cheung, Y. F.

Choi, H. S.

W. Tawfik, J. Song, J. J. Lee, J. S. Ha, S.-W. Ryu, H. S. Choi, B. Ryu, and J. K. Lee, “Effect of external tensile stress on blue InGaN/GaN multi-quantum-well light-emitting diodes,” Appl. Surf. Sci. 283(14), 727–731 (2013).
[Crossref]

Choi, H. W.

Christiansen, S.

Chung, K.

H. Baek, J. K. Hyun, K. Chung, H. Oh, and G.-C. Yi, “Selective excitation of Fabry-Perot or whispering-gallery mode-type lasing in GaN microrods,” Appl. Phys. Lett. 105(20), 201108 (2014).
[Crossref]

H. Baek, C. H. Lee, K. Chung, and G. C. Yi, “Epitaxial GaN microdisk lasers grown on graphene microdots,” Nano Lett. 13(6), 2782–2785 (2013).
[Crossref] [PubMed]

Collazo, R.

P. Reddy, M. P. Hoffmann, F. Kaess, Z. Bryan, I. Bryan, M. Bobea, A. Klump, J. Tweedie, R. Kirste, S. Mita, M. Gerhold, R. Collazo, and Z. Sitar, “Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control,” J. Appl. Phys. 120(18), 185704 (2016).
[Crossref]

W. Guo, Z. Bryan, J. Xie, R. Kirste, S. Mita, I. Bryan, L. Hussey, M. Bobea, B. Haidet, M. Gerhold, R. Collazo, and Z. Sitar, “Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates,” J. Appl. Phys. 115(10), 103108 (2014).
[Crossref]

S. Mita, R. Collazo, and Z. Sitar, “Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition,” J. Cryst. Growth 311(10), 3044–3048 (2009).
[Crossref]

Dai, J. N.

W. Tian, W. Y. Yan, X. Hui, S. L. Li, Y. Y. Ding, Y. Li, Y. Tian, J. N. Dai, Y. Y. Fang, Z. H. Wu, C. H. Yu, and C. Q. Chen, “Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition,” J. Appl. Phys. 112(6), 063526 (2012).
[Crossref]

Dang, Dle. S.

R. Koester, J. S. Hwang, C. Durand, Dle. S. Dang, and J. Eymery, “Self-assembled growth of catalyst-free GaN wires by metal-organic vapour phase epitaxy,” Nanotechnology 21(1), 015602 (2010).
[Crossref] [PubMed]

Dapkus, P. D.

Y. T. Lin, T. W. Yeh, and P. D. Dapkus, “Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition,” Nanotechnology 23(46), 465601 (2012).
[Crossref] [PubMed]

Dehzangi, A.

Y. Zhang, H. Li, P. Li, A. Dehzangi, L. Wang, X. Yi, and G. Wang, “Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si Substrate,” IEEE Photonics J. 9(5), 1–8 (2017).
[Crossref]

Di Fabrizio, E.

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, R. Lin, A. Giugni, E. Di Fabrizio, X. Li, and J. Ye, “Lateral-Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence,” Adv. Funct. Mater. 28(32), 1802395 (2018).
[Crossref]

Ding, Y. Y.

W. Tian, W. Y. Yan, X. Hui, S. L. Li, Y. Y. Ding, Y. Li, Y. Tian, J. N. Dai, Y. Y. Fang, Z. H. Wu, C. H. Yu, and C. Q. Chen, “Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition,” J. Appl. Phys. 112(6), 063526 (2012).
[Crossref]

Durand, C.

R. Koester, J. S. Hwang, C. Durand, Dle. S. Dang, and J. Eymery, “Self-assembled growth of catalyst-free GaN wires by metal-organic vapour phase epitaxy,” Nanotechnology 21(1), 015602 (2010).
[Crossref] [PubMed]

Eymery, J.

R. Koester, J. S. Hwang, C. Durand, Dle. S. Dang, and J. Eymery, “Self-assembled growth of catalyst-free GaN wires by metal-organic vapour phase epitaxy,” Nanotechnology 21(1), 015602 (2010).
[Crossref] [PubMed]

Fang, Y. Y.

W. Tian, W. Y. Yan, X. Hui, S. L. Li, Y. Y. Ding, Y. Li, Y. Tian, J. N. Dai, Y. Y. Fang, Z. H. Wu, C. H. Yu, and C. Q. Chen, “Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition,” J. Appl. Phys. 112(6), 063526 (2012).
[Crossref]

Feng, M.

M. Feng, J. He, Q. Sun, H. Gao, Z. Li, Y. Zhou, J. Liu, S. Zhang, D. Li, L. Zhang, X. Sun, D. Li, H. Wang, M. Ikeda, R. Wang, and H. Yang, “Room-temperature electrically pumped InGaN-based microdisk laser grown on Si,” Opt. Express 26(4), 5043–5051 (2018).
[Crossref] [PubMed]

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, S. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10(9), 595–599 (2016).
[Crossref]

Gao, H.

Gerhold, M.

P. Reddy, M. P. Hoffmann, F. Kaess, Z. Bryan, I. Bryan, M. Bobea, A. Klump, J. Tweedie, R. Kirste, S. Mita, M. Gerhold, R. Collazo, and Z. Sitar, “Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control,” J. Appl. Phys. 120(18), 185704 (2016).
[Crossref]

W. Guo, Z. Bryan, J. Xie, R. Kirste, S. Mita, I. Bryan, L. Hussey, M. Bobea, B. Haidet, M. Gerhold, R. Collazo, and Z. Sitar, “Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates,” J. Appl. Phys. 115(10), 103108 (2014).
[Crossref]

Giugni, A.

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, R. Lin, A. Giugni, E. Di Fabrizio, X. Li, and J. Ye, “Lateral-Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence,” Adv. Funct. Mater. 28(32), 1802395 (2018).
[Crossref]

Grinys, T.

J. Mickevičius, T. Grinys, A. Kadys, and G. Tamulaitis, “Optimization of growing green-emitting InGaN/GaN multiple quantum wells on stress-relieving superlattices,” Opt. Mater. 82, 71–74 (2018).
[Crossref]

Guo, S.

W. Guo, J. Li, M. Sheikhi, J. Jiang, Z. Yang, H. Li, S. Guo, J. Sheng, J. Sun, B. Bo, and J. Ye, “Comparative study on luminescence extraction strategies of LED by large-scale fabrication of nanopillar and nanohole structures,” J. Phys. D Appl. Phys. 51(24), 24LT01 (2018).
[Crossref]

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, R. Lin, A. Giugni, E. Di Fabrizio, X. Li, and J. Ye, “Lateral-Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence,” Adv. Funct. Mater. 28(32), 1802395 (2018).
[Crossref]

Guo, W.

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, R. Lin, A. Giugni, E. Di Fabrizio, X. Li, and J. Ye, “Lateral-Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence,” Adv. Funct. Mater. 28(32), 1802395 (2018).
[Crossref]

W. Guo, J. Li, M. Sheikhi, J. Jiang, Z. Yang, H. Li, S. Guo, J. Sheng, J. Sun, B. Bo, and J. Ye, “Comparative study on luminescence extraction strategies of LED by large-scale fabrication of nanopillar and nanohole structures,” J. Phys. D Appl. Phys. 51(24), 24LT01 (2018).
[Crossref]

W. Guo, Z. Bryan, J. Xie, R. Kirste, S. Mita, I. Bryan, L. Hussey, M. Bobea, B. Haidet, M. Gerhold, R. Collazo, and Z. Sitar, “Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates,” J. Appl. Phys. 115(10), 103108 (2014).
[Crossref]

Ha, J. S.

W. Tawfik, J. Song, J. J. Lee, J. S. Ha, S.-W. Ryu, H. S. Choi, B. Ryu, and J. K. Lee, “Effect of external tensile stress on blue InGaN/GaN multi-quantum-well light-emitting diodes,” Appl. Surf. Sci. 283(14), 727–731 (2013).
[Crossref]

Haidet, B.

W. Guo, Z. Bryan, J. Xie, R. Kirste, S. Mita, I. Bryan, L. Hussey, M. Bobea, B. Haidet, M. Gerhold, R. Collazo, and Z. Sitar, “Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates,” J. Appl. Phys. 115(10), 103108 (2014).
[Crossref]

He, J.

Hoffmann, M. P.

P. Reddy, M. P. Hoffmann, F. Kaess, Z. Bryan, I. Bryan, M. Bobea, A. Klump, J. Tweedie, R. Kirste, S. Mita, M. Gerhold, R. Collazo, and Z. Sitar, “Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control,” J. Appl. Phys. 120(18), 185704 (2016).
[Crossref]

Honda, Y.

S.-Y. Bae, K. Lekhal, H.-J. Lee, J.-W. Min, D.-S. Lee, Y. Honda, and H. Amano, “Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants,” Physica Status Solidi (b) 254, 1600722 (2017).

M. Kushimoto, T. Tanikawa, Y. Honda, and H. Amano, “Optically pumped lasing properties of (1-101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates,” Appl. Phys. Express 8(2), 022702 (2015).
[Crossref]

Huang, C.-Y.

C.-Y. Huang, T.-Y. Tai, J.-J. Lin, T.-C. Chang, C.-Y. Liu, T.-C. Lu, Y.-R. Wu, and H.-C. Kuo, “Mode-Hopping Phenomena in the InGaN-Based Core–Shell Nanorod Array Collective Lasing,” ACS Photonics 5(7), 2724–2729 (2018).
[Crossref]

Huang, J. K.

J. R. Chang, S. P. Chang, Y. J. Li, Y. J. Cheng, K. P. Sou, J. K. Huang, H. C. Kuo, and C. Y. Chang, “Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars,” Appl. Phys. Lett. 100(26), 261103 (2012).
[Crossref]

Hui, X.

W. Tian, W. Y. Yan, X. Hui, S. L. Li, Y. Y. Ding, Y. Li, Y. Tian, J. N. Dai, Y. Y. Fang, Z. H. Wu, C. H. Yu, and C. Q. Chen, “Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition,” J. Appl. Phys. 112(6), 063526 (2012).
[Crossref]

Hussey, L.

W. Guo, Z. Bryan, J. Xie, R. Kirste, S. Mita, I. Bryan, L. Hussey, M. Bobea, B. Haidet, M. Gerhold, R. Collazo, and Z. Sitar, “Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates,” J. Appl. Phys. 115(10), 103108 (2014).
[Crossref]

Hwang, J. S.

R. Koester, J. S. Hwang, C. Durand, Dle. S. Dang, and J. Eymery, “Self-assembled growth of catalyst-free GaN wires by metal-organic vapour phase epitaxy,” Nanotechnology 21(1), 015602 (2010).
[Crossref] [PubMed]

Hyun, J. K.

H. Baek, J. K. Hyun, K. Chung, H. Oh, and G.-C. Yi, “Selective excitation of Fabry-Perot or whispering-gallery mode-type lasing in GaN microrods,” Appl. Phys. Lett. 105(20), 201108 (2014).
[Crossref]

Ikeda, M.

M. Feng, J. He, Q. Sun, H. Gao, Z. Li, Y. Zhou, J. Liu, S. Zhang, D. Li, L. Zhang, X. Sun, D. Li, H. Wang, M. Ikeda, R. Wang, and H. Yang, “Room-temperature electrically pumped InGaN-based microdisk laser grown on Si,” Opt. Express 26(4), 5043–5051 (2018).
[Crossref] [PubMed]

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, S. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10(9), 595–599 (2016).
[Crossref]

Jiang, H.

K. Nam, J. Li, M. Nakarmi, J. Lin, and H. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[Crossref]

Jiang, J.

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, R. Lin, A. Giugni, E. Di Fabrizio, X. Li, and J. Ye, “Lateral-Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence,” Adv. Funct. Mater. 28(32), 1802395 (2018).
[Crossref]

W. Guo, J. Li, M. Sheikhi, J. Jiang, Z. Yang, H. Li, S. Guo, J. Sheng, J. Sun, B. Bo, and J. Ye, “Comparative study on luminescence extraction strategies of LED by large-scale fabrication of nanopillar and nanohole structures,” J. Phys. D Appl. Phys. 51(24), 24LT01 (2018).
[Crossref]

Jiang, M.

Z. Li, M. Jiang, Y. Sun, Z. Zhang, B. Li, H. Zhao, C. Shan, and D. Shen, “Electrically pumped Fabry-Perot microlasers from single Ga-doped ZnO microbelt based heterostructure diodes,” Nanoscale 10(39), 18774–18785 (2018).
[Crossref] [PubMed]

Kadys, A.

J. Mickevičius, T. Grinys, A. Kadys, and G. Tamulaitis, “Optimization of growing green-emitting InGaN/GaN multiple quantum wells on stress-relieving superlattices,” Opt. Mater. 82, 71–74 (2018).
[Crossref]

Kaess, F.

P. Reddy, M. P. Hoffmann, F. Kaess, Z. Bryan, I. Bryan, M. Bobea, A. Klump, J. Tweedie, R. Kirste, S. Mita, M. Gerhold, R. Collazo, and Z. Sitar, “Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control,” J. Appl. Phys. 120(18), 185704 (2016).
[Crossref]

Kan, H.

H. Yoshida, Y. Yamashita, M. Kuwabara, and H. Kan, “A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode,” Nat. Photonics 2(9), 551–554 (2008).
[Crossref]

Khaidukov, N. M.

J. Méndez-Ramos, J. C. Ruiz-Morales, P. Acosta-Mora, and N. M. Khaidukov, “Infrared-light induced curing of photosensitive resins through photon up-conversion for novel cost-effective luminescent 3D-printing technology,” J. Mater. Chem. C Mater. Opt. Electron. Devices 4(4), 801–806 (2016).
[Crossref]

Kiometzis, M.

Kirste, R.

P. Reddy, M. P. Hoffmann, F. Kaess, Z. Bryan, I. Bryan, M. Bobea, A. Klump, J. Tweedie, R. Kirste, S. Mita, M. Gerhold, R. Collazo, and Z. Sitar, “Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control,” J. Appl. Phys. 120(18), 185704 (2016).
[Crossref]

W. Guo, Z. Bryan, J. Xie, R. Kirste, S. Mita, I. Bryan, L. Hussey, M. Bobea, B. Haidet, M. Gerhold, R. Collazo, and Z. Sitar, “Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates,” J. Appl. Phys. 115(10), 103108 (2014).
[Crossref]

Kishino, K.

T. Kouno, K. Kishino, and M. Sakai, “Lasing Action on Whispering Gallery Mode of Self-Organized GaN Hexagonal Microdisk Crystal Fabricated by RF-Plasma-Assisted Molecular Beam Epitaxy,” IEEE J. Quantum Electron. 47(12), 1565–1570 (2011).
[Crossref]

Klump, A.

P. Reddy, M. P. Hoffmann, F. Kaess, Z. Bryan, I. Bryan, M. Bobea, A. Klump, J. Tweedie, R. Kirste, S. Mita, M. Gerhold, R. Collazo, and Z. Sitar, “Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control,” J. Appl. Phys. 120(18), 185704 (2016).
[Crossref]

Koester, R.

R. Koester, J. S. Hwang, C. Durand, Dle. S. Dang, and J. Eymery, “Self-assembled growth of catalyst-free GaN wires by metal-organic vapour phase epitaxy,” Nanotechnology 21(1), 015602 (2010).
[Crossref] [PubMed]

Kouno, T.

T. Kouno, K. Kishino, and M. Sakai, “Lasing Action on Whispering Gallery Mode of Self-Organized GaN Hexagonal Microdisk Crystal Fabricated by RF-Plasma-Assisted Molecular Beam Epitaxy,” IEEE J. Quantum Electron. 47(12), 1565–1570 (2011).
[Crossref]

Kuo, H. C.

J. R. Chang, S. P. Chang, Y. J. Li, Y. J. Cheng, K. P. Sou, J. K. Huang, H. C. Kuo, and C. Y. Chang, “Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars,” Appl. Phys. Lett. 100(26), 261103 (2012).
[Crossref]

Kuo, H.-C.

C.-Y. Huang, T.-Y. Tai, J.-J. Lin, T.-C. Chang, C.-Y. Liu, T.-C. Lu, Y.-R. Wu, and H.-C. Kuo, “Mode-Hopping Phenomena in the InGaN-Based Core–Shell Nanorod Array Collective Lasing,” ACS Photonics 5(7), 2724–2729 (2018).
[Crossref]

Kushimoto, M.

M. Kushimoto, T. Tanikawa, Y. Honda, and H. Amano, “Optically pumped lasing properties of (1-101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates,” Appl. Phys. Express 8(2), 022702 (2015).
[Crossref]

Kuwabara, M.

H. Yoshida, Y. Yamashita, M. Kuwabara, and H. Kan, “A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode,” Nat. Photonics 2(9), 551–554 (2008).
[Crossref]

Lee, C. H.

H. Baek, C. H. Lee, K. Chung, and G. C. Yi, “Epitaxial GaN microdisk lasers grown on graphene microdots,” Nano Lett. 13(6), 2782–2785 (2013).
[Crossref] [PubMed]

Lee, D.-S.

S.-Y. Bae, K. Lekhal, H.-J. Lee, J.-W. Min, D.-S. Lee, Y. Honda, and H. Amano, “Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants,” Physica Status Solidi (b) 254, 1600722 (2017).

Lee, H.-J.

S.-Y. Bae, K. Lekhal, H.-J. Lee, J.-W. Min, D.-S. Lee, Y. Honda, and H. Amano, “Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants,” Physica Status Solidi (b) 254, 1600722 (2017).

Lee, J. J.

W. Tawfik, J. Song, J. J. Lee, J. S. Ha, S.-W. Ryu, H. S. Choi, B. Ryu, and J. K. Lee, “Effect of external tensile stress on blue InGaN/GaN multi-quantum-well light-emitting diodes,” Appl. Surf. Sci. 283(14), 727–731 (2013).
[Crossref]

Lee, J. K.

W. Tawfik, J. Song, J. J. Lee, J. S. Ha, S.-W. Ryu, H. S. Choi, B. Ryu, and J. K. Lee, “Effect of external tensile stress on blue InGaN/GaN multi-quantum-well light-emitting diodes,” Appl. Surf. Sci. 283(14), 727–731 (2013).
[Crossref]

Lekhal, K.

S.-Y. Bae, K. Lekhal, H.-J. Lee, J.-W. Min, D.-S. Lee, Y. Honda, and H. Amano, “Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants,” Physica Status Solidi (b) 254, 1600722 (2017).

Li, B.

Z. Li, M. Jiang, Y. Sun, Z. Zhang, B. Li, H. Zhao, C. Shan, and D. Shen, “Electrically pumped Fabry-Perot microlasers from single Ga-doped ZnO microbelt based heterostructure diodes,” Nanoscale 10(39), 18774–18785 (2018).
[Crossref] [PubMed]

Li, D.

Li, H.

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, R. Lin, A. Giugni, E. Di Fabrizio, X. Li, and J. Ye, “Lateral-Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence,” Adv. Funct. Mater. 28(32), 1802395 (2018).
[Crossref]

W. Guo, J. Li, M. Sheikhi, J. Jiang, Z. Yang, H. Li, S. Guo, J. Sheng, J. Sun, B. Bo, and J. Ye, “Comparative study on luminescence extraction strategies of LED by large-scale fabrication of nanopillar and nanohole structures,” J. Phys. D Appl. Phys. 51(24), 24LT01 (2018).
[Crossref]

G. Wang, X. Yi, L. Wang, P. Li, L. Liu, H. Li, and Y. Zhang, “UV-C whispering-gallery modes in AlN microdisks with AlGaN-based multiple quantum wells on Si substrate,” J. Nanophotonics 12, 1 (2018).

Y. Zhang, H. Li, P. Li, A. Dehzangi, L. Wang, X. Yi, and G. Wang, “Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si Substrate,” IEEE Photonics J. 9(5), 1–8 (2017).
[Crossref]

Li, H. J.

Li, J.

W. Guo, J. Li, M. Sheikhi, J. Jiang, Z. Yang, H. Li, S. Guo, J. Sheng, J. Sun, B. Bo, and J. Ye, “Comparative study on luminescence extraction strategies of LED by large-scale fabrication of nanopillar and nanohole structures,” J. Phys. D Appl. Phys. 51(24), 24LT01 (2018).
[Crossref]

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, R. Lin, A. Giugni, E. Di Fabrizio, X. Li, and J. Ye, “Lateral-Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence,” Adv. Funct. Mater. 28(32), 1802395 (2018).
[Crossref]

K. Nam, J. Li, M. Nakarmi, J. Lin, and H. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[Crossref]

Li, J. M.

Li, K.-H.

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, R. Lin, A. Giugni, E. Di Fabrizio, X. Li, and J. Ye, “Lateral-Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence,” Adv. Funct. Mater. 28(32), 1802395 (2018).
[Crossref]

Li, P.

G. Wang, X. Yi, L. Wang, P. Li, L. Liu, H. Li, and Y. Zhang, “UV-C whispering-gallery modes in AlN microdisks with AlGaN-based multiple quantum wells on Si substrate,” J. Nanophotonics 12, 1 (2018).

Y. Zhang, H. Li, P. Li, A. Dehzangi, L. Wang, X. Yi, and G. Wang, “Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si Substrate,” IEEE Photonics J. 9(5), 1–8 (2017).
[Crossref]

Li, Q.

Q. Li and G. T. Wang, “Spatial distribution of defect luminescence in GaN nanowires,” Nano Lett. 10(5), 1554–1558 (2010).
[Crossref] [PubMed]

Li, S. L.

W. Tian, W. Y. Yan, X. Hui, S. L. Li, Y. Y. Ding, Y. Li, Y. Tian, J. N. Dai, Y. Y. Fang, Z. H. Wu, C. H. Yu, and C. Q. Chen, “Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition,” J. Appl. Phys. 112(6), 063526 (2012).
[Crossref]

Li, X.

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, R. Lin, A. Giugni, E. Di Fabrizio, X. Li, and J. Ye, “Lateral-Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence,” Adv. Funct. Mater. 28(32), 1802395 (2018).
[Crossref]

Li, Y.

W. Tian, W. Y. Yan, X. Hui, S. L. Li, Y. Y. Ding, Y. Li, Y. Tian, J. N. Dai, Y. Y. Fang, Z. H. Wu, C. H. Yu, and C. Q. Chen, “Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition,” J. Appl. Phys. 112(6), 063526 (2012).
[Crossref]

Li, Y. J.

J. R. Chang, S. P. Chang, Y. J. Li, Y. J. Cheng, K. P. Sou, J. K. Huang, H. C. Kuo, and C. Y. Chang, “Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars,” Appl. Phys. Lett. 100(26), 261103 (2012).
[Crossref]

Li, Z.

M. Feng, J. He, Q. Sun, H. Gao, Z. Li, Y. Zhou, J. Liu, S. Zhang, D. Li, L. Zhang, X. Sun, D. Li, H. Wang, M. Ikeda, R. Wang, and H. Yang, “Room-temperature electrically pumped InGaN-based microdisk laser grown on Si,” Opt. Express 26(4), 5043–5051 (2018).
[Crossref] [PubMed]

Z. Li, M. Jiang, Y. Sun, Z. Zhang, B. Li, H. Zhao, C. Shan, and D. Shen, “Electrically pumped Fabry-Perot microlasers from single Ga-doped ZnO microbelt based heterostructure diodes,” Nanoscale 10(39), 18774–18785 (2018).
[Crossref] [PubMed]

L. C. Wang, Y. Y. Zhang, R. Chen, Z. Q. Liu, J. Ma, Z. Li, X. Y. Yi, H. J. Li, J. X. Wang, G. H. Wang, W. H. Zhu, and J. M. Li, “Optically pumped lasing with a Q-factor exceeding 6000 from wet-etched GaN micro-pyramids,” Opt. Lett. 42(15), 2976–2979 (2017).
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Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, S. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10(9), 595–599 (2016).
[Crossref]

Lin, J.

K. Nam, J. Li, M. Nakarmi, J. Lin, and H. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[Crossref]

Lin, J.-J.

C.-Y. Huang, T.-Y. Tai, J.-J. Lin, T.-C. Chang, C.-Y. Liu, T.-C. Lu, Y.-R. Wu, and H.-C. Kuo, “Mode-Hopping Phenomena in the InGaN-Based Core–Shell Nanorod Array Collective Lasing,” ACS Photonics 5(7), 2724–2729 (2018).
[Crossref]

Lin, R.

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, R. Lin, A. Giugni, E. Di Fabrizio, X. Li, and J. Ye, “Lateral-Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence,” Adv. Funct. Mater. 28(32), 1802395 (2018).
[Crossref]

Lin, Y. T.

Y. T. Lin, T. W. Yeh, and P. D. Dapkus, “Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition,” Nanotechnology 23(46), 465601 (2012).
[Crossref] [PubMed]

Ling, B.

R. Chen, B. Ling, X. W. Sun, and H. D. Sun, “Room temperature excitonic whispering gallery mode lasing from high-quality hexagonal ZnO microdisks,” Adv. Mater. 23(19), 2199–2204 (2011).
[Crossref] [PubMed]

Liu, C.-Y.

C.-Y. Huang, T.-Y. Tai, J.-J. Lin, T.-C. Chang, C.-Y. Liu, T.-C. Lu, Y.-R. Wu, and H.-C. Kuo, “Mode-Hopping Phenomena in the InGaN-Based Core–Shell Nanorod Array Collective Lasing,” ACS Photonics 5(7), 2724–2729 (2018).
[Crossref]

Liu, J.

M. Feng, J. He, Q. Sun, H. Gao, Z. Li, Y. Zhou, J. Liu, S. Zhang, D. Li, L. Zhang, X. Sun, D. Li, H. Wang, M. Ikeda, R. Wang, and H. Yang, “Room-temperature electrically pumped InGaN-based microdisk laser grown on Si,” Opt. Express 26(4), 5043–5051 (2018).
[Crossref] [PubMed]

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, S. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10(9), 595–599 (2016).
[Crossref]

Liu, L.

G. Wang, X. Yi, L. Wang, P. Li, L. Liu, H. Li, and Y. Zhang, “UV-C whispering-gallery modes in AlN microdisks with AlGaN-based multiple quantum wells on Si substrate,” J. Nanophotonics 12, 1 (2018).

Liu, S.

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, S. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10(9), 595–599 (2016).
[Crossref]

Liu, Z. Q.

Lu, T.-C.

C.-Y. Huang, T.-Y. Tai, J.-J. Lin, T.-C. Chang, C.-Y. Liu, T.-C. Lu, Y.-R. Wu, and H.-C. Kuo, “Mode-Hopping Phenomena in the InGaN-Based Core–Shell Nanorod Array Collective Lasing,” ACS Photonics 5(7), 2724–2729 (2018).
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Ma, J.

Méndez-Ramos, J.

J. Méndez-Ramos, J. C. Ruiz-Morales, P. Acosta-Mora, and N. M. Khaidukov, “Infrared-light induced curing of photosensitive resins through photon up-conversion for novel cost-effective luminescent 3D-printing technology,” J. Mater. Chem. C Mater. Opt. Electron. Devices 4(4), 801–806 (2016).
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J. Mickevičius, T. Grinys, A. Kadys, and G. Tamulaitis, “Optimization of growing green-emitting InGaN/GaN multiple quantum wells on stress-relieving superlattices,” Opt. Mater. 82, 71–74 (2018).
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Min, J.-W.

S.-Y. Bae, K. Lekhal, H.-J. Lee, J.-W. Min, D.-S. Lee, Y. Honda, and H. Amano, “Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants,” Physica Status Solidi (b) 254, 1600722 (2017).

Mita, S.

P. Reddy, M. P. Hoffmann, F. Kaess, Z. Bryan, I. Bryan, M. Bobea, A. Klump, J. Tweedie, R. Kirste, S. Mita, M. Gerhold, R. Collazo, and Z. Sitar, “Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control,” J. Appl. Phys. 120(18), 185704 (2016).
[Crossref]

W. Guo, Z. Bryan, J. Xie, R. Kirste, S. Mita, I. Bryan, L. Hussey, M. Bobea, B. Haidet, M. Gerhold, R. Collazo, and Z. Sitar, “Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates,” J. Appl. Phys. 115(10), 103108 (2014).
[Crossref]

S. Mita, R. Collazo, and Z. Sitar, “Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition,” J. Cryst. Growth 311(10), 3044–3048 (2009).
[Crossref]

Nakarmi, M.

K. Nam, J. Li, M. Nakarmi, J. Lin, and H. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[Crossref]

Nam, K.

K. Nam, J. Li, M. Nakarmi, J. Lin, and H. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[Crossref]

Oh, H.

H. Baek, J. K. Hyun, K. Chung, H. Oh, and G.-C. Yi, “Selective excitation of Fabry-Perot or whispering-gallery mode-type lasing in GaN microrods,” Appl. Phys. Lett. 105(20), 201108 (2014).
[Crossref]

Reddy, P.

P. Reddy, M. P. Hoffmann, F. Kaess, Z. Bryan, I. Bryan, M. Bobea, A. Klump, J. Tweedie, R. Kirste, S. Mita, M. Gerhold, R. Collazo, and Z. Sitar, “Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control,” J. Appl. Phys. 120(18), 185704 (2016).
[Crossref]

Ruiz-Morales, J. C.

J. Méndez-Ramos, J. C. Ruiz-Morales, P. Acosta-Mora, and N. M. Khaidukov, “Infrared-light induced curing of photosensitive resins through photon up-conversion for novel cost-effective luminescent 3D-printing technology,” J. Mater. Chem. C Mater. Opt. Electron. Devices 4(4), 801–806 (2016).
[Crossref]

Ryu, B.

W. Tawfik, J. Song, J. J. Lee, J. S. Ha, S.-W. Ryu, H. S. Choi, B. Ryu, and J. K. Lee, “Effect of external tensile stress on blue InGaN/GaN multi-quantum-well light-emitting diodes,” Appl. Surf. Sci. 283(14), 727–731 (2013).
[Crossref]

Ryu, S.-W.

W. Tawfik, J. Song, J. J. Lee, J. S. Ha, S.-W. Ryu, H. S. Choi, B. Ryu, and J. K. Lee, “Effect of external tensile stress on blue InGaN/GaN multi-quantum-well light-emitting diodes,” Appl. Surf. Sci. 283(14), 727–731 (2013).
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Sakai, M.

T. Kouno, K. Kishino, and M. Sakai, “Lasing Action on Whispering Gallery Mode of Self-Organized GaN Hexagonal Microdisk Crystal Fabricated by RF-Plasma-Assisted Molecular Beam Epitaxy,” IEEE J. Quantum Electron. 47(12), 1565–1570 (2011).
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Sarau, G.

Shan, C.

Z. Li, M. Jiang, Y. Sun, Z. Zhang, B. Li, H. Zhao, C. Shan, and D. Shen, “Electrically pumped Fabry-Perot microlasers from single Ga-doped ZnO microbelt based heterostructure diodes,” Nanoscale 10(39), 18774–18785 (2018).
[Crossref] [PubMed]

Sheikhi, M.

W. Guo, J. Li, M. Sheikhi, J. Jiang, Z. Yang, H. Li, S. Guo, J. Sheng, J. Sun, B. Bo, and J. Ye, “Comparative study on luminescence extraction strategies of LED by large-scale fabrication of nanopillar and nanohole structures,” J. Phys. D Appl. Phys. 51(24), 24LT01 (2018).
[Crossref]

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, R. Lin, A. Giugni, E. Di Fabrizio, X. Li, and J. Ye, “Lateral-Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence,” Adv. Funct. Mater. 28(32), 1802395 (2018).
[Crossref]

Shen, D.

Z. Li, M. Jiang, Y. Sun, Z. Zhang, B. Li, H. Zhao, C. Shan, and D. Shen, “Electrically pumped Fabry-Perot microlasers from single Ga-doped ZnO microbelt based heterostructure diodes,” Nanoscale 10(39), 18774–18785 (2018).
[Crossref] [PubMed]

Sheng, J.

W. Guo, J. Li, M. Sheikhi, J. Jiang, Z. Yang, H. Li, S. Guo, J. Sheng, J. Sun, B. Bo, and J. Ye, “Comparative study on luminescence extraction strategies of LED by large-scale fabrication of nanopillar and nanohole structures,” J. Phys. D Appl. Phys. 51(24), 24LT01 (2018).
[Crossref]

Sitar, Z.

P. Reddy, M. P. Hoffmann, F. Kaess, Z. Bryan, I. Bryan, M. Bobea, A. Klump, J. Tweedie, R. Kirste, S. Mita, M. Gerhold, R. Collazo, and Z. Sitar, “Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control,” J. Appl. Phys. 120(18), 185704 (2016).
[Crossref]

W. Guo, Z. Bryan, J. Xie, R. Kirste, S. Mita, I. Bryan, L. Hussey, M. Bobea, B. Haidet, M. Gerhold, R. Collazo, and Z. Sitar, “Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates,” J. Appl. Phys. 115(10), 103108 (2014).
[Crossref]

S. Mita, R. Collazo, and Z. Sitar, “Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition,” J. Cryst. Growth 311(10), 3044–3048 (2009).
[Crossref]

Song, J.

W. Tawfik, J. Song, J. J. Lee, J. S. Ha, S.-W. Ryu, H. S. Choi, B. Ryu, and J. K. Lee, “Effect of external tensile stress on blue InGaN/GaN multi-quantum-well light-emitting diodes,” Appl. Surf. Sci. 283(14), 727–731 (2013).
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J. R. Chang, S. P. Chang, Y. J. Li, Y. J. Cheng, K. P. Sou, J. K. Huang, H. C. Kuo, and C. Y. Chang, “Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars,” Appl. Phys. Lett. 100(26), 261103 (2012).
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W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, R. Lin, A. Giugni, E. Di Fabrizio, X. Li, and J. Ye, “Lateral-Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence,” Adv. Funct. Mater. 28(32), 1802395 (2018).
[Crossref]

Sun, H. D.

R. Chen, B. Ling, X. W. Sun, and H. D. Sun, “Room temperature excitonic whispering gallery mode lasing from high-quality hexagonal ZnO microdisks,” Adv. Mater. 23(19), 2199–2204 (2011).
[Crossref] [PubMed]

Sun, J.

W. Guo, J. Li, M. Sheikhi, J. Jiang, Z. Yang, H. Li, S. Guo, J. Sheng, J. Sun, B. Bo, and J. Ye, “Comparative study on luminescence extraction strategies of LED by large-scale fabrication of nanopillar and nanohole structures,” J. Phys. D Appl. Phys. 51(24), 24LT01 (2018).
[Crossref]

Sun, Q.

M. Feng, J. He, Q. Sun, H. Gao, Z. Li, Y. Zhou, J. Liu, S. Zhang, D. Li, L. Zhang, X. Sun, D. Li, H. Wang, M. Ikeda, R. Wang, and H. Yang, “Room-temperature electrically pumped InGaN-based microdisk laser grown on Si,” Opt. Express 26(4), 5043–5051 (2018).
[Crossref] [PubMed]

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, S. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10(9), 595–599 (2016).
[Crossref]

Sun, X.

Sun, X. W.

R. Chen, B. Ling, X. W. Sun, and H. D. Sun, “Room temperature excitonic whispering gallery mode lasing from high-quality hexagonal ZnO microdisks,” Adv. Mater. 23(19), 2199–2204 (2011).
[Crossref] [PubMed]

Sun, Y.

Z. Li, M. Jiang, Y. Sun, Z. Zhang, B. Li, H. Zhao, C. Shan, and D. Shen, “Electrically pumped Fabry-Perot microlasers from single Ga-doped ZnO microbelt based heterostructure diodes,” Nanoscale 10(39), 18774–18785 (2018).
[Crossref] [PubMed]

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, S. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10(9), 595–599 (2016).
[Crossref]

Tai, T.-Y.

C.-Y. Huang, T.-Y. Tai, J.-J. Lin, T.-C. Chang, C.-Y. Liu, T.-C. Lu, Y.-R. Wu, and H.-C. Kuo, “Mode-Hopping Phenomena in the InGaN-Based Core–Shell Nanorod Array Collective Lasing,” ACS Photonics 5(7), 2724–2729 (2018).
[Crossref]

Tamulaitis, G.

J. Mickevičius, T. Grinys, A. Kadys, and G. Tamulaitis, “Optimization of growing green-emitting InGaN/GaN multiple quantum wells on stress-relieving superlattices,” Opt. Mater. 82, 71–74 (2018).
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Tanikawa, T.

M. Kushimoto, T. Tanikawa, Y. Honda, and H. Amano, “Optically pumped lasing properties of (1-101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates,” Appl. Phys. Express 8(2), 022702 (2015).
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Tawfik, W.

W. Tawfik, J. Song, J. J. Lee, J. S. Ha, S.-W. Ryu, H. S. Choi, B. Ryu, and J. K. Lee, “Effect of external tensile stress on blue InGaN/GaN multi-quantum-well light-emitting diodes,” Appl. Surf. Sci. 283(14), 727–731 (2013).
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Tessarek, C.

Tian, W.

W. Tian, W. Y. Yan, X. Hui, S. L. Li, Y. Y. Ding, Y. Li, Y. Tian, J. N. Dai, Y. Y. Fang, Z. H. Wu, C. H. Yu, and C. Q. Chen, “Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition,” J. Appl. Phys. 112(6), 063526 (2012).
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Tian, Y.

W. Tian, W. Y. Yan, X. Hui, S. L. Li, Y. Y. Ding, Y. Li, Y. Tian, J. N. Dai, Y. Y. Fang, Z. H. Wu, C. H. Yu, and C. Q. Chen, “Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition,” J. Appl. Phys. 112(6), 063526 (2012).
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Torre, B.

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, R. Lin, A. Giugni, E. Di Fabrizio, X. Li, and J. Ye, “Lateral-Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence,” Adv. Funct. Mater. 28(32), 1802395 (2018).
[Crossref]

Tweedie, J.

P. Reddy, M. P. Hoffmann, F. Kaess, Z. Bryan, I. Bryan, M. Bobea, A. Klump, J. Tweedie, R. Kirste, S. Mita, M. Gerhold, R. Collazo, and Z. Sitar, “Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control,” J. Appl. Phys. 120(18), 185704 (2016).
[Crossref]

Wang, G.

G. Wang, X. Yi, L. Wang, P. Li, L. Liu, H. Li, and Y. Zhang, “UV-C whispering-gallery modes in AlN microdisks with AlGaN-based multiple quantum wells on Si substrate,” J. Nanophotonics 12, 1 (2018).

Y. Zhang, H. Li, P. Li, A. Dehzangi, L. Wang, X. Yi, and G. Wang, “Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si Substrate,” IEEE Photonics J. 9(5), 1–8 (2017).
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Wang, G. H.

Wang, G. T.

Q. Li and G. T. Wang, “Spatial distribution of defect luminescence in GaN nanowires,” Nano Lett. 10(5), 1554–1558 (2010).
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Wang, H.

Wang, J. X.

Wang, L.

G. Wang, X. Yi, L. Wang, P. Li, L. Liu, H. Li, and Y. Zhang, “UV-C whispering-gallery modes in AlN microdisks with AlGaN-based multiple quantum wells on Si substrate,” J. Nanophotonics 12, 1 (2018).

Y. Zhang, H. Li, P. Li, A. Dehzangi, L. Wang, X. Yi, and G. Wang, “Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si Substrate,” IEEE Photonics J. 9(5), 1–8 (2017).
[Crossref]

Wang, L. C.

Wang, R.

Wu, Y.-R.

C.-Y. Huang, T.-Y. Tai, J.-J. Lin, T.-C. Chang, C.-Y. Liu, T.-C. Lu, Y.-R. Wu, and H.-C. Kuo, “Mode-Hopping Phenomena in the InGaN-Based Core–Shell Nanorod Array Collective Lasing,” ACS Photonics 5(7), 2724–2729 (2018).
[Crossref]

Wu, Z. H.

W. Tian, W. Y. Yan, X. Hui, S. L. Li, Y. Y. Ding, Y. Li, Y. Tian, J. N. Dai, Y. Y. Fang, Z. H. Wu, C. H. Yu, and C. Q. Chen, “Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition,” J. Appl. Phys. 112(6), 063526 (2012).
[Crossref]

Xie, J.

W. Guo, Z. Bryan, J. Xie, R. Kirste, S. Mita, I. Bryan, L. Hussey, M. Bobea, B. Haidet, M. Gerhold, R. Collazo, and Z. Sitar, “Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates,” J. Appl. Phys. 115(10), 103108 (2014).
[Crossref]

Yamashita, Y.

H. Yoshida, Y. Yamashita, M. Kuwabara, and H. Kan, “A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode,” Nat. Photonics 2(9), 551–554 (2008).
[Crossref]

Yan, W. Y.

W. Tian, W. Y. Yan, X. Hui, S. L. Li, Y. Y. Ding, Y. Li, Y. Tian, J. N. Dai, Y. Y. Fang, Z. H. Wu, C. H. Yu, and C. Q. Chen, “Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition,” J. Appl. Phys. 112(6), 063526 (2012).
[Crossref]

Yang, H.

M. Feng, J. He, Q. Sun, H. Gao, Z. Li, Y. Zhou, J. Liu, S. Zhang, D. Li, L. Zhang, X. Sun, D. Li, H. Wang, M. Ikeda, R. Wang, and H. Yang, “Room-temperature electrically pumped InGaN-based microdisk laser grown on Si,” Opt. Express 26(4), 5043–5051 (2018).
[Crossref] [PubMed]

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, S. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10(9), 595–599 (2016).
[Crossref]

Yang, Z.

W. Guo, J. Li, M. Sheikhi, J. Jiang, Z. Yang, H. Li, S. Guo, J. Sheng, J. Sun, B. Bo, and J. Ye, “Comparative study on luminescence extraction strategies of LED by large-scale fabrication of nanopillar and nanohole structures,” J. Phys. D Appl. Phys. 51(24), 24LT01 (2018).
[Crossref]

Ye, J.

W. Guo, J. Li, M. Sheikhi, J. Jiang, Z. Yang, H. Li, S. Guo, J. Sheng, J. Sun, B. Bo, and J. Ye, “Comparative study on luminescence extraction strategies of LED by large-scale fabrication of nanopillar and nanohole structures,” J. Phys. D Appl. Phys. 51(24), 24LT01 (2018).
[Crossref]

W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, R. Lin, A. Giugni, E. Di Fabrizio, X. Li, and J. Ye, “Lateral-Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence,” Adv. Funct. Mater. 28(32), 1802395 (2018).
[Crossref]

Yeh, T. W.

Y. T. Lin, T. W. Yeh, and P. D. Dapkus, “Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition,” Nanotechnology 23(46), 465601 (2012).
[Crossref] [PubMed]

Yi, G. C.

H. Baek, C. H. Lee, K. Chung, and G. C. Yi, “Epitaxial GaN microdisk lasers grown on graphene microdots,” Nano Lett. 13(6), 2782–2785 (2013).
[Crossref] [PubMed]

Yi, G.-C.

H. Baek, J. K. Hyun, K. Chung, H. Oh, and G.-C. Yi, “Selective excitation of Fabry-Perot or whispering-gallery mode-type lasing in GaN microrods,” Appl. Phys. Lett. 105(20), 201108 (2014).
[Crossref]

Yi, X.

G. Wang, X. Yi, L. Wang, P. Li, L. Liu, H. Li, and Y. Zhang, “UV-C whispering-gallery modes in AlN microdisks with AlGaN-based multiple quantum wells on Si substrate,” J. Nanophotonics 12, 1 (2018).

Y. Zhang, H. Li, P. Li, A. Dehzangi, L. Wang, X. Yi, and G. Wang, “Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si Substrate,” IEEE Photonics J. 9(5), 1–8 (2017).
[Crossref]

Yi, X. Y.

Yoshida, H.

H. Yoshida, Y. Yamashita, M. Kuwabara, and H. Kan, “A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode,” Nat. Photonics 2(9), 551–554 (2008).
[Crossref]

Yu, C. H.

W. Tian, W. Y. Yan, X. Hui, S. L. Li, Y. Y. Ding, Y. Li, Y. Tian, J. N. Dai, Y. Y. Fang, Z. H. Wu, C. H. Yu, and C. Q. Chen, “Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition,” J. Appl. Phys. 112(6), 063526 (2012).
[Crossref]

Zhang, L.

M. Feng, J. He, Q. Sun, H. Gao, Z. Li, Y. Zhou, J. Liu, S. Zhang, D. Li, L. Zhang, X. Sun, D. Li, H. Wang, M. Ikeda, R. Wang, and H. Yang, “Room-temperature electrically pumped InGaN-based microdisk laser grown on Si,” Opt. Express 26(4), 5043–5051 (2018).
[Crossref] [PubMed]

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, S. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10(9), 595–599 (2016).
[Crossref]

Zhang, S.

M. Feng, J. He, Q. Sun, H. Gao, Z. Li, Y. Zhou, J. Liu, S. Zhang, D. Li, L. Zhang, X. Sun, D. Li, H. Wang, M. Ikeda, R. Wang, and H. Yang, “Room-temperature electrically pumped InGaN-based microdisk laser grown on Si,” Opt. Express 26(4), 5043–5051 (2018).
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Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, S. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10(9), 595–599 (2016).
[Crossref]

Zhang, X.

Zhang, Y.

G. Wang, X. Yi, L. Wang, P. Li, L. Liu, H. Li, and Y. Zhang, “UV-C whispering-gallery modes in AlN microdisks with AlGaN-based multiple quantum wells on Si substrate,” J. Nanophotonics 12, 1 (2018).

Y. Zhang, H. Li, P. Li, A. Dehzangi, L. Wang, X. Yi, and G. Wang, “Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si Substrate,” IEEE Photonics J. 9(5), 1–8 (2017).
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X. Zhang, Y. F. Cheung, Y. Zhang, and H. W. Choi, “Whispering-gallery mode lasing from optically free-standing InGaN microdisks,” Opt. Lett. 39(19), 5614–5617 (2014).
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Zhang, Y. Y.

Zhang, Z.

Z. Li, M. Jiang, Y. Sun, Z. Zhang, B. Li, H. Zhao, C. Shan, and D. Shen, “Electrically pumped Fabry-Perot microlasers from single Ga-doped ZnO microbelt based heterostructure diodes,” Nanoscale 10(39), 18774–18785 (2018).
[Crossref] [PubMed]

Zhao, H.

Z. Li, M. Jiang, Y. Sun, Z. Zhang, B. Li, H. Zhao, C. Shan, and D. Shen, “Electrically pumped Fabry-Perot microlasers from single Ga-doped ZnO microbelt based heterostructure diodes,” Nanoscale 10(39), 18774–18785 (2018).
[Crossref] [PubMed]

Zhou, K.

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, S. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10(9), 595–599 (2016).
[Crossref]

Zhou, Y.

M. Feng, J. He, Q. Sun, H. Gao, Z. Li, Y. Zhou, J. Liu, S. Zhang, D. Li, L. Zhang, X. Sun, D. Li, H. Wang, M. Ikeda, R. Wang, and H. Yang, “Room-temperature electrically pumped InGaN-based microdisk laser grown on Si,” Opt. Express 26(4), 5043–5051 (2018).
[Crossref] [PubMed]

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, S. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10(9), 595–599 (2016).
[Crossref]

Zhu, W. H.

ACS Photonics (1)

C.-Y. Huang, T.-Y. Tai, J.-J. Lin, T.-C. Chang, C.-Y. Liu, T.-C. Lu, Y.-R. Wu, and H.-C. Kuo, “Mode-Hopping Phenomena in the InGaN-Based Core–Shell Nanorod Array Collective Lasing,” ACS Photonics 5(7), 2724–2729 (2018).
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R. Chen, B. Ling, X. W. Sun, and H. D. Sun, “Room temperature excitonic whispering gallery mode lasing from high-quality hexagonal ZnO microdisks,” Adv. Mater. 23(19), 2199–2204 (2011).
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M. Kushimoto, T. Tanikawa, Y. Honda, and H. Amano, “Optically pumped lasing properties of (1-101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates,” Appl. Phys. Express 8(2), 022702 (2015).
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K. Nam, J. Li, M. Nakarmi, J. Lin, and H. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
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J. R. Chang, S. P. Chang, Y. J. Li, Y. J. Cheng, K. P. Sou, J. K. Huang, H. C. Kuo, and C. Y. Chang, “Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars,” Appl. Phys. Lett. 100(26), 261103 (2012).
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Appl. Surf. Sci. (1)

W. Tawfik, J. Song, J. J. Lee, J. S. Ha, S.-W. Ryu, H. S. Choi, B. Ryu, and J. K. Lee, “Effect of external tensile stress on blue InGaN/GaN multi-quantum-well light-emitting diodes,” Appl. Surf. Sci. 283(14), 727–731 (2013).
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T. Kouno, K. Kishino, and M. Sakai, “Lasing Action on Whispering Gallery Mode of Self-Organized GaN Hexagonal Microdisk Crystal Fabricated by RF-Plasma-Assisted Molecular Beam Epitaxy,” IEEE J. Quantum Electron. 47(12), 1565–1570 (2011).
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IEEE Photonics J. (1)

Y. Zhang, H. Li, P. Li, A. Dehzangi, L. Wang, X. Yi, and G. Wang, “Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si Substrate,” IEEE Photonics J. 9(5), 1–8 (2017).
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W. Tian, W. Y. Yan, X. Hui, S. L. Li, Y. Y. Ding, Y. Li, Y. Tian, J. N. Dai, Y. Y. Fang, Z. H. Wu, C. H. Yu, and C. Q. Chen, “Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition,” J. Appl. Phys. 112(6), 063526 (2012).
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G. Wang, X. Yi, L. Wang, P. Li, L. Liu, H. Li, and Y. Zhang, “UV-C whispering-gallery modes in AlN microdisks with AlGaN-based multiple quantum wells on Si substrate,” J. Nanophotonics 12, 1 (2018).

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W. Guo, J. Li, M. Sheikhi, J. Jiang, Z. Yang, H. Li, S. Guo, J. Sheng, J. Sun, B. Bo, and J. Ye, “Comparative study on luminescence extraction strategies of LED by large-scale fabrication of nanopillar and nanohole structures,” J. Phys. D Appl. Phys. 51(24), 24LT01 (2018).
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H. Baek, C. H. Lee, K. Chung, and G. C. Yi, “Epitaxial GaN microdisk lasers grown on graphene microdots,” Nano Lett. 13(6), 2782–2785 (2013).
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Nanoscale (1)

Z. Li, M. Jiang, Y. Sun, Z. Zhang, B. Li, H. Zhao, C. Shan, and D. Shen, “Electrically pumped Fabry-Perot microlasers from single Ga-doped ZnO microbelt based heterostructure diodes,” Nanoscale 10(39), 18774–18785 (2018).
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R. Koester, J. S. Hwang, C. Durand, Dle. S. Dang, and J. Eymery, “Self-assembled growth of catalyst-free GaN wires by metal-organic vapour phase epitaxy,” Nanotechnology 21(1), 015602 (2010).
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Nat. Photonics (2)

Y. Sun, K. Zhou, Q. Sun, J. Liu, M. Feng, Z. Li, Y. Zhou, L. Zhang, D. Li, S. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10(9), 595–599 (2016).
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Other (1)

H. W. Choi, P. T. Lai, and S. J. Chua, “Whispering-gallery mode lasing in GaN microdisks,” in SPIE, 2007), 0692.

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Figures (8)

Fig. 1
Fig. 1 Top-view SEM images of Single GaN microdisk with side length of 5 μm (a) and 14 μm (b). The outlines of the underlying SiO2 microholes are marked with the dashed red.
Fig. 2
Fig. 2 Schematic process flow in fabricating GaN hexagonal microdisk arrays on the surface of patterned SiO2/GaN/sapphire: As-fabricated patterned SiO2 circular microholes (a); Growth front evolution of the GaN hexagonal microdisk (b)-(d).
Fig. 3
Fig. 3 Schematic setup of μ-PL measurement system (a); RT-PL spectra of 14 μm microdisk arrays under different pumping powers (b). Inset image shows a zoom-in view of the emissions below lasing threshold; The zoom-in view of the evolution of two modes located at 372.3 and 373.9 nm, respectively, at pumping power below lasing threshold and above lasing threshold (c); The influence of pumping power on the integrated intensity and FWHM of the edge emission of 14 μm microdisk arrays (d).
Fig. 4
Fig. 4 Far-field patterns observed below (a) and above threshold (b)-(d) by setting a sheet of white copying paper in front of the edge of 14 μm GaN microdisk arrays under optical pumping (the pulse width was 5 ns, and the repetition rate 50 Hz) at room temperature, and a blue luminescence formed when the near-UV light illuminated the white copying paper.
Fig. 5
Fig. 5 Angular-resolved PL measurement in a three-dimensional illustration, together with a top-view SEM image indicating the collection direction of the optical fiber (a); PL spectra of the 14 μm microdisk arrays above lasing threshold (b).
Fig. 6
Fig. 6 Polarization dependent PL spectra of the 14 μm GaN microdisk, where TE (0°) and TM (90°) polarizations of the edge emissions were collected through a Glan-Talyor prism (a); Integrated PL intensity as a function of angle between polarizer prism and sample surface (b); Calculated resonant modes (dashed vertical lines) intersecting with the dispersion curve (top) and the experimental lasing spectrum (bottom) of the 14 μm GaN microdisk above lasing threshold (c).
Fig. 7
Fig. 7 Spatially-resolved PL mapping of the emission wavelength (a) and Raman spectroscopy of E2 (high) peak position (b) of a single 14 μm GaN microdisk.
Fig. 8
Fig. 8 Top-view SEM image (a) and CL intensity distribution of panchromatic (250-850 nm) (b), as well as monochromatic intensity distribution at λ = 370 nm (c) and λ = 550 nm (d) of the 14 μm GaN microdisk. The outlines of the underlying SiO2 holes are denoted by the dashed red circles.

Equations (4)

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Δλ= λ 2 2d( nλ dn dλ ) .
n 2 1=2.60+ 1.75 λ 2 λ 2 0.256 2 + 4.1 λ 2 λ 2 17.86 2 .
Δλ= λ 2 2π n eff R
9 2 L×n=λ[ N TE + 3 π arctan(n n 2 4 3 )]

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