Abstract

Intense electroluminescence (EL) from Tb3+ ions in the Al2O3/Tb2O3 nanolaminate films is achieved in a metal-oxide-semiconductor structure fabricated on silicon, utilizing atomic layer deposition. Precisely controlling of the nanolaminates enables the study on the influence of the atomic Tb layers and the distance between every dopant layers on the EL mechanism. The EL intensity decreases with excessive Tb dopant cycles due to the reduction of optically active Tb3+ ions. Cross-relaxation among adjacent Tb2O3 dopant layers depopulates the excited ions in 5D3 level and contributes to the green EL from 5D4 level, which strongly depends on the Al2O3 sublayer thickness with a critical value of ~3 nm. The 543 nm green EL from Tb3+ ions shows maximum power density of 3.37 mW cm−2 and external quantum efficiency up to 0.73%. Further promotion of efficiency is realized by adopting thicker luminescent layer and Al2O3 cladding layer.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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References

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  1. J. H. Kim and P. H. Holloway, “Near-Infrared-Electroluminescent Light-Emitting Planar Optical Sources Based on Gallium Nitride Doped with Rare Earths,” Adv. Mater. 17(1), 91–96 (2005).
    [Crossref]
  2. C. H. Cheng, Y. C. Lien, C. L. Wu, and G. R. Lin, “Mutlicolor electroluminescent Si quantum dots embedded in SiOx thin film MOSLED with 2.4% external quantum efficiency,” Opt. Express 21(1), 391–403 (2013).
    [Crossref] [PubMed]
  3. O. Jambois, Y. Berencen, K. Hijazi, M. Wojdak, A. J. Kenyon, F. Gourbilleau, R. Rizk, and B. Garrido, “Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions,” J. Appl. Phys. 106(6), 063526 (2009).
    [Crossref]
  4. C. Zhu, C. Lv, C. Wang, Y. Sha, D. Li, X. Ma, and D. Yang, “Color-tunable electroluminescence from Eu-doped TiO2/p+-Si heterostructured devices: engineering of energy transfer,” Opt. Express 23(3), 2819–2826 (2015).
    [Crossref] [PubMed]
  5. O. Jambois, F. Gourbilleau, A. J. Kenyon, J. Montserrat, R. Rizk, and B. Garrido, “Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters,” Opt. Express 18(3), 2230–2235 (2010).
    [Crossref] [PubMed]
  6. T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: Increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
    [Crossref]
  7. C. Zhu, C. Y. Lv, M. M. Jiang, J. W. Zhou, D. S. Li, X. Y. Ma, and D. R. Yang, “Green electroluminescence from Tb4O7 films on silicon: impact excitation of Tb3+ ions by hot carriers,” Appl. Phys. Lett. 108(5), 051113 (2016).
    [Crossref]
  8. L. Rebohle, J. Lehmann, S. Prucnal, M. Helm, and W. Skorupa, “The electrical and electroluminescence properties of rare earth implanted MOS light emitting devices in the near infrared,” J. Lumin. 132(12), 3151–3153 (2012).
    [Crossref]
  9. Y. Berencen, R. Wutzler, L. Rebohle, D. Hiller, J. M. Ramirez, J. A. Rodriguez, W. Skorupa, and B. Garrido, “Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices,” Appl. Phys. Lett. 103(11), 111102 (2013).
    [Crossref]
  10. L. Rebohle, M. Braun, R. Wutzler, B. Liu, J. M. Sun, M. Helm, and W. Skorupa, “Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition,” Appl. Phys. Lett. 104(25), 251113 (2014).
    [Crossref]
  11. A. J. Kenyon, “Recent developments in rare-earth doped materials for optoelectronics,” Prog. Quantum Electron. 26(4–5), 225–284 (2002).
    [Crossref]
  12. Y. Yang, Y. P. Li, C. X. Wang, C. Zhu, C. Y. Lv, X. Y. Ma, and D. R. Yang, “Rare-Earth Doped ZnO Films: A Material Platform to Realize Multicolor and Near-Infrared Electroluminescence,” Adv. Opt. Mater. 2(3), 240–244 (2014).
    [Crossref]
  13. E. H. Penilla, Y. Kodera, and J. E. Garay, “Blue-Green Emission in Terbium-Doped Alumina (Tb: Al2O3) Transparent Ceramics,” Adv. Funct. Mater. 23(48), 6036–6043 (2013).
    [Crossref]
  14. J. M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, and T. Gebel, “Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices,” J. Appl. Phys. 97(12), 123513 (2005).
    [Crossref]
  15. A. N. Nazarov, S. I. Tiagulskyi, I. P. Tyagulskyy, V. S. Lysenko, L. Rebohle, J. Lehmann, S. Prucnal, M. Voelskow, and W. Skorupa, “The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices,” J. Appl. Phys. 107(12), 123112 (2010).
    [Crossref]
  16. Y. Y. Choi, K. S. Sohn, H. D. Park, and S. Y. Choi, “Luminescence and decay behaviors of Tb-doped yttrium silicate,” J. Mater. Res. 16(3), 881–889 (2001).
    [Crossref]
  17. S. M. Sze, Physics of Semiconductor Devices (Wiley, 1981).
  18. S. Cueff, J. M. Ramirez, J. A. Kurvits, Y. Berencen, R. Zia, B. Garrido, R. Rizk, and Ch. Labbe, “Electroluminescence efficiencies of erbium in silicon-based hosts,” Appl. Phys. Lett. 103(19), 191109 (2013).
    [Crossref]
  19. W. Kim, S. I. Park, Z. P. Zhang, and S. Wong, “Current Conduction Mechanism of Nitrogen-Doped AlOx RRAM,” IEEE Trans. Electron Dev. 61(6), 2158–2163 (2014).
    [Crossref]
  20. N. Krasutsky and H. W. Moos, “Energy Transfer between the Low-Lying Energy Levels of Pr3+ and Nd3+ in LaCl3,” Phys. Rev. B 8(3), 1010–1020 (1973).
    [Crossref]
  21. M. V. Fischetti, D. J. DiMaria, S. D. Brorson, T. N. Theis, and J. Kirtley, “Theory of high-field electron transport in silicon dioxide,” Phys. Rev. B Condens. Matter 31(12), 8124–8142 (1985).
    [Crossref] [PubMed]
  22. L. Rebohle, J. Lehmann, S. Prucnal, J. M. Sun, M. Helm, and W. Skorupa, “Physical limitations of the electroluminescence mechanism in terbium-based light emitters: matrix and layer thickness dependence,” Appl. Phys. B 98(2–3), 439–442 (2010).
    [Crossref]
  23. S. Coffa, G. Franzò, and F. Priolo, “High efficiency and fast modulation of Er-doped light emitting Si diodes,” Appl. Phys. Lett. 69(14), 2077–2079 (1996).
    [Crossref]

2016 (1)

C. Zhu, C. Y. Lv, M. M. Jiang, J. W. Zhou, D. S. Li, X. Y. Ma, and D. R. Yang, “Green electroluminescence from Tb4O7 films on silicon: impact excitation of Tb3+ ions by hot carriers,” Appl. Phys. Lett. 108(5), 051113 (2016).
[Crossref]

2015 (1)

2014 (3)

L. Rebohle, M. Braun, R. Wutzler, B. Liu, J. M. Sun, M. Helm, and W. Skorupa, “Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition,” Appl. Phys. Lett. 104(25), 251113 (2014).
[Crossref]

Y. Yang, Y. P. Li, C. X. Wang, C. Zhu, C. Y. Lv, X. Y. Ma, and D. R. Yang, “Rare-Earth Doped ZnO Films: A Material Platform to Realize Multicolor and Near-Infrared Electroluminescence,” Adv. Opt. Mater. 2(3), 240–244 (2014).
[Crossref]

W. Kim, S. I. Park, Z. P. Zhang, and S. Wong, “Current Conduction Mechanism of Nitrogen-Doped AlOx RRAM,” IEEE Trans. Electron Dev. 61(6), 2158–2163 (2014).
[Crossref]

2013 (4)

E. H. Penilla, Y. Kodera, and J. E. Garay, “Blue-Green Emission in Terbium-Doped Alumina (Tb: Al2O3) Transparent Ceramics,” Adv. Funct. Mater. 23(48), 6036–6043 (2013).
[Crossref]

Y. Berencen, R. Wutzler, L. Rebohle, D. Hiller, J. M. Ramirez, J. A. Rodriguez, W. Skorupa, and B. Garrido, “Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices,” Appl. Phys. Lett. 103(11), 111102 (2013).
[Crossref]

S. Cueff, J. M. Ramirez, J. A. Kurvits, Y. Berencen, R. Zia, B. Garrido, R. Rizk, and Ch. Labbe, “Electroluminescence efficiencies of erbium in silicon-based hosts,” Appl. Phys. Lett. 103(19), 191109 (2013).
[Crossref]

C. H. Cheng, Y. C. Lien, C. L. Wu, and G. R. Lin, “Mutlicolor electroluminescent Si quantum dots embedded in SiOx thin film MOSLED with 2.4% external quantum efficiency,” Opt. Express 21(1), 391–403 (2013).
[Crossref] [PubMed]

2012 (1)

L. Rebohle, J. Lehmann, S. Prucnal, M. Helm, and W. Skorupa, “The electrical and electroluminescence properties of rare earth implanted MOS light emitting devices in the near infrared,” J. Lumin. 132(12), 3151–3153 (2012).
[Crossref]

2011 (1)

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: Increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

2010 (3)

O. Jambois, F. Gourbilleau, A. J. Kenyon, J. Montserrat, R. Rizk, and B. Garrido, “Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters,” Opt. Express 18(3), 2230–2235 (2010).
[Crossref] [PubMed]

A. N. Nazarov, S. I. Tiagulskyi, I. P. Tyagulskyy, V. S. Lysenko, L. Rebohle, J. Lehmann, S. Prucnal, M. Voelskow, and W. Skorupa, “The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices,” J. Appl. Phys. 107(12), 123112 (2010).
[Crossref]

L. Rebohle, J. Lehmann, S. Prucnal, J. M. Sun, M. Helm, and W. Skorupa, “Physical limitations of the electroluminescence mechanism in terbium-based light emitters: matrix and layer thickness dependence,” Appl. Phys. B 98(2–3), 439–442 (2010).
[Crossref]

2009 (1)

O. Jambois, Y. Berencen, K. Hijazi, M. Wojdak, A. J. Kenyon, F. Gourbilleau, R. Rizk, and B. Garrido, “Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions,” J. Appl. Phys. 106(6), 063526 (2009).
[Crossref]

2005 (2)

J. H. Kim and P. H. Holloway, “Near-Infrared-Electroluminescent Light-Emitting Planar Optical Sources Based on Gallium Nitride Doped with Rare Earths,” Adv. Mater. 17(1), 91–96 (2005).
[Crossref]

J. M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, and T. Gebel, “Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices,” J. Appl. Phys. 97(12), 123513 (2005).
[Crossref]

2002 (1)

A. J. Kenyon, “Recent developments in rare-earth doped materials for optoelectronics,” Prog. Quantum Electron. 26(4–5), 225–284 (2002).
[Crossref]

2001 (1)

Y. Y. Choi, K. S. Sohn, H. D. Park, and S. Y. Choi, “Luminescence and decay behaviors of Tb-doped yttrium silicate,” J. Mater. Res. 16(3), 881–889 (2001).
[Crossref]

1996 (1)

S. Coffa, G. Franzò, and F. Priolo, “High efficiency and fast modulation of Er-doped light emitting Si diodes,” Appl. Phys. Lett. 69(14), 2077–2079 (1996).
[Crossref]

1985 (1)

M. V. Fischetti, D. J. DiMaria, S. D. Brorson, T. N. Theis, and J. Kirtley, “Theory of high-field electron transport in silicon dioxide,” Phys. Rev. B Condens. Matter 31(12), 8124–8142 (1985).
[Crossref] [PubMed]

1973 (1)

N. Krasutsky and H. W. Moos, “Energy Transfer between the Low-Lying Energy Levels of Pr3+ and Nd3+ in LaCl3,” Phys. Rev. B 8(3), 1010–1020 (1973).
[Crossref]

Berencen, Y.

Y. Berencen, R. Wutzler, L. Rebohle, D. Hiller, J. M. Ramirez, J. A. Rodriguez, W. Skorupa, and B. Garrido, “Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices,” Appl. Phys. Lett. 103(11), 111102 (2013).
[Crossref]

S. Cueff, J. M. Ramirez, J. A. Kurvits, Y. Berencen, R. Zia, B. Garrido, R. Rizk, and Ch. Labbe, “Electroluminescence efficiencies of erbium in silicon-based hosts,” Appl. Phys. Lett. 103(19), 191109 (2013).
[Crossref]

O. Jambois, Y. Berencen, K. Hijazi, M. Wojdak, A. J. Kenyon, F. Gourbilleau, R. Rizk, and B. Garrido, “Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions,” J. Appl. Phys. 106(6), 063526 (2009).
[Crossref]

Braun, M.

L. Rebohle, M. Braun, R. Wutzler, B. Liu, J. M. Sun, M. Helm, and W. Skorupa, “Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition,” Appl. Phys. Lett. 104(25), 251113 (2014).
[Crossref]

Bremers, H.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: Increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Brorson, S. D.

M. V. Fischetti, D. J. DiMaria, S. D. Brorson, T. N. Theis, and J. Kirtley, “Theory of high-field electron transport in silicon dioxide,” Phys. Rev. B Condens. Matter 31(12), 8124–8142 (1985).
[Crossref] [PubMed]

Cheng, C. H.

Choi, S. Y.

Y. Y. Choi, K. S. Sohn, H. D. Park, and S. Y. Choi, “Luminescence and decay behaviors of Tb-doped yttrium silicate,” J. Mater. Res. 16(3), 881–889 (2001).
[Crossref]

Choi, Y. Y.

Y. Y. Choi, K. S. Sohn, H. D. Park, and S. Y. Choi, “Luminescence and decay behaviors of Tb-doped yttrium silicate,” J. Mater. Res. 16(3), 881–889 (2001).
[Crossref]

Coffa, S.

S. Coffa, G. Franzò, and F. Priolo, “High efficiency and fast modulation of Er-doped light emitting Si diodes,” Appl. Phys. Lett. 69(14), 2077–2079 (1996).
[Crossref]

Cueff, S.

S. Cueff, J. M. Ramirez, J. A. Kurvits, Y. Berencen, R. Zia, B. Garrido, R. Rizk, and Ch. Labbe, “Electroluminescence efficiencies of erbium in silicon-based hosts,” Appl. Phys. Lett. 103(19), 191109 (2013).
[Crossref]

Dekorsy, T.

J. M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, and T. Gebel, “Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices,” J. Appl. Phys. 97(12), 123513 (2005).
[Crossref]

DiMaria, D. J.

M. V. Fischetti, D. J. DiMaria, S. D. Brorson, T. N. Theis, and J. Kirtley, “Theory of high-field electron transport in silicon dioxide,” Phys. Rev. B Condens. Matter 31(12), 8124–8142 (1985).
[Crossref] [PubMed]

Fischetti, M. V.

M. V. Fischetti, D. J. DiMaria, S. D. Brorson, T. N. Theis, and J. Kirtley, “Theory of high-field electron transport in silicon dioxide,” Phys. Rev. B Condens. Matter 31(12), 8124–8142 (1985).
[Crossref] [PubMed]

Franzò, G.

S. Coffa, G. Franzò, and F. Priolo, “High efficiency and fast modulation of Er-doped light emitting Si diodes,” Appl. Phys. Lett. 69(14), 2077–2079 (1996).
[Crossref]

Garay, J. E.

E. H. Penilla, Y. Kodera, and J. E. Garay, “Blue-Green Emission in Terbium-Doped Alumina (Tb: Al2O3) Transparent Ceramics,” Adv. Funct. Mater. 23(48), 6036–6043 (2013).
[Crossref]

Garrido, B.

S. Cueff, J. M. Ramirez, J. A. Kurvits, Y. Berencen, R. Zia, B. Garrido, R. Rizk, and Ch. Labbe, “Electroluminescence efficiencies of erbium in silicon-based hosts,” Appl. Phys. Lett. 103(19), 191109 (2013).
[Crossref]

Y. Berencen, R. Wutzler, L. Rebohle, D. Hiller, J. M. Ramirez, J. A. Rodriguez, W. Skorupa, and B. Garrido, “Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices,” Appl. Phys. Lett. 103(11), 111102 (2013).
[Crossref]

O. Jambois, F. Gourbilleau, A. J. Kenyon, J. Montserrat, R. Rizk, and B. Garrido, “Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters,” Opt. Express 18(3), 2230–2235 (2010).
[Crossref] [PubMed]

O. Jambois, Y. Berencen, K. Hijazi, M. Wojdak, A. J. Kenyon, F. Gourbilleau, R. Rizk, and B. Garrido, “Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions,” J. Appl. Phys. 106(6), 063526 (2009).
[Crossref]

Gebel, T.

J. M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, and T. Gebel, “Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices,” J. Appl. Phys. 97(12), 123513 (2005).
[Crossref]

Gourbilleau, F.

O. Jambois, F. Gourbilleau, A. J. Kenyon, J. Montserrat, R. Rizk, and B. Garrido, “Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters,” Opt. Express 18(3), 2230–2235 (2010).
[Crossref] [PubMed]

O. Jambois, Y. Berencen, K. Hijazi, M. Wojdak, A. J. Kenyon, F. Gourbilleau, R. Rizk, and B. Garrido, “Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions,” J. Appl. Phys. 106(6), 063526 (2009).
[Crossref]

Hangleiter, A.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: Increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Helm, M.

L. Rebohle, M. Braun, R. Wutzler, B. Liu, J. M. Sun, M. Helm, and W. Skorupa, “Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition,” Appl. Phys. Lett. 104(25), 251113 (2014).
[Crossref]

L. Rebohle, J. Lehmann, S. Prucnal, M. Helm, and W. Skorupa, “The electrical and electroluminescence properties of rare earth implanted MOS light emitting devices in the near infrared,” J. Lumin. 132(12), 3151–3153 (2012).
[Crossref]

L. Rebohle, J. Lehmann, S. Prucnal, J. M. Sun, M. Helm, and W. Skorupa, “Physical limitations of the electroluminescence mechanism in terbium-based light emitters: matrix and layer thickness dependence,” Appl. Phys. B 98(2–3), 439–442 (2010).
[Crossref]

J. M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, and T. Gebel, “Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices,” J. Appl. Phys. 97(12), 123513 (2005).
[Crossref]

Hijazi, K.

O. Jambois, Y. Berencen, K. Hijazi, M. Wojdak, A. J. Kenyon, F. Gourbilleau, R. Rizk, and B. Garrido, “Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions,” J. Appl. Phys. 106(6), 063526 (2009).
[Crossref]

Hiller, D.

Y. Berencen, R. Wutzler, L. Rebohle, D. Hiller, J. M. Ramirez, J. A. Rodriguez, W. Skorupa, and B. Garrido, “Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices,” Appl. Phys. Lett. 103(11), 111102 (2013).
[Crossref]

Hoffmann, L.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: Increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Holloway, P. H.

J. H. Kim and P. H. Holloway, “Near-Infrared-Electroluminescent Light-Emitting Planar Optical Sources Based on Gallium Nitride Doped with Rare Earths,” Adv. Mater. 17(1), 91–96 (2005).
[Crossref]

Jambois, O.

O. Jambois, F. Gourbilleau, A. J. Kenyon, J. Montserrat, R. Rizk, and B. Garrido, “Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters,” Opt. Express 18(3), 2230–2235 (2010).
[Crossref] [PubMed]

O. Jambois, Y. Berencen, K. Hijazi, M. Wojdak, A. J. Kenyon, F. Gourbilleau, R. Rizk, and B. Garrido, “Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions,” J. Appl. Phys. 106(6), 063526 (2009).
[Crossref]

Jiang, M. M.

C. Zhu, C. Y. Lv, M. M. Jiang, J. W. Zhou, D. S. Li, X. Y. Ma, and D. R. Yang, “Green electroluminescence from Tb4O7 films on silicon: impact excitation of Tb3+ ions by hot carriers,” Appl. Phys. Lett. 108(5), 051113 (2016).
[Crossref]

Jonen, H.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: Increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Kenyon, A. J.

O. Jambois, F. Gourbilleau, A. J. Kenyon, J. Montserrat, R. Rizk, and B. Garrido, “Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters,” Opt. Express 18(3), 2230–2235 (2010).
[Crossref] [PubMed]

O. Jambois, Y. Berencen, K. Hijazi, M. Wojdak, A. J. Kenyon, F. Gourbilleau, R. Rizk, and B. Garrido, “Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions,” J. Appl. Phys. 106(6), 063526 (2009).
[Crossref]

A. J. Kenyon, “Recent developments in rare-earth doped materials for optoelectronics,” Prog. Quantum Electron. 26(4–5), 225–284 (2002).
[Crossref]

Ketzer, F. A.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: Increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Kim, J. H.

J. H. Kim and P. H. Holloway, “Near-Infrared-Electroluminescent Light-Emitting Planar Optical Sources Based on Gallium Nitride Doped with Rare Earths,” Adv. Mater. 17(1), 91–96 (2005).
[Crossref]

Kim, W.

W. Kim, S. I. Park, Z. P. Zhang, and S. Wong, “Current Conduction Mechanism of Nitrogen-Doped AlOx RRAM,” IEEE Trans. Electron Dev. 61(6), 2158–2163 (2014).
[Crossref]

Kirtley, J.

M. V. Fischetti, D. J. DiMaria, S. D. Brorson, T. N. Theis, and J. Kirtley, “Theory of high-field electron transport in silicon dioxide,” Phys. Rev. B Condens. Matter 31(12), 8124–8142 (1985).
[Crossref] [PubMed]

Kodera, Y.

E. H. Penilla, Y. Kodera, and J. E. Garay, “Blue-Green Emission in Terbium-Doped Alumina (Tb: Al2O3) Transparent Ceramics,” Adv. Funct. Mater. 23(48), 6036–6043 (2013).
[Crossref]

Krasutsky, N.

N. Krasutsky and H. W. Moos, “Energy Transfer between the Low-Lying Energy Levels of Pr3+ and Nd3+ in LaCl3,” Phys. Rev. B 8(3), 1010–1020 (1973).
[Crossref]

Kruse, A.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: Increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Kurvits, J. A.

S. Cueff, J. M. Ramirez, J. A. Kurvits, Y. Berencen, R. Zia, B. Garrido, R. Rizk, and Ch. Labbe, “Electroluminescence efficiencies of erbium in silicon-based hosts,” Appl. Phys. Lett. 103(19), 191109 (2013).
[Crossref]

Labbe, Ch.

S. Cueff, J. M. Ramirez, J. A. Kurvits, Y. Berencen, R. Zia, B. Garrido, R. Rizk, and Ch. Labbe, “Electroluminescence efficiencies of erbium in silicon-based hosts,” Appl. Phys. Lett. 103(19), 191109 (2013).
[Crossref]

Langer, T.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: Increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Lehmann, J.

L. Rebohle, J. Lehmann, S. Prucnal, M. Helm, and W. Skorupa, “The electrical and electroluminescence properties of rare earth implanted MOS light emitting devices in the near infrared,” J. Lumin. 132(12), 3151–3153 (2012).
[Crossref]

A. N. Nazarov, S. I. Tiagulskyi, I. P. Tyagulskyy, V. S. Lysenko, L. Rebohle, J. Lehmann, S. Prucnal, M. Voelskow, and W. Skorupa, “The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices,” J. Appl. Phys. 107(12), 123112 (2010).
[Crossref]

L. Rebohle, J. Lehmann, S. Prucnal, J. M. Sun, M. Helm, and W. Skorupa, “Physical limitations of the electroluminescence mechanism in terbium-based light emitters: matrix and layer thickness dependence,” Appl. Phys. B 98(2–3), 439–442 (2010).
[Crossref]

Li, D.

Li, D. S.

C. Zhu, C. Y. Lv, M. M. Jiang, J. W. Zhou, D. S. Li, X. Y. Ma, and D. R. Yang, “Green electroluminescence from Tb4O7 films on silicon: impact excitation of Tb3+ ions by hot carriers,” Appl. Phys. Lett. 108(5), 051113 (2016).
[Crossref]

Li, Y. P.

Y. Yang, Y. P. Li, C. X. Wang, C. Zhu, C. Y. Lv, X. Y. Ma, and D. R. Yang, “Rare-Earth Doped ZnO Films: A Material Platform to Realize Multicolor and Near-Infrared Electroluminescence,” Adv. Opt. Mater. 2(3), 240–244 (2014).
[Crossref]

Lien, Y. C.

Lin, G. R.

Liu, B.

L. Rebohle, M. Braun, R. Wutzler, B. Liu, J. M. Sun, M. Helm, and W. Skorupa, “Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition,” Appl. Phys. Lett. 104(25), 251113 (2014).
[Crossref]

Lv, C.

Lv, C. Y.

C. Zhu, C. Y. Lv, M. M. Jiang, J. W. Zhou, D. S. Li, X. Y. Ma, and D. R. Yang, “Green electroluminescence from Tb4O7 films on silicon: impact excitation of Tb3+ ions by hot carriers,” Appl. Phys. Lett. 108(5), 051113 (2016).
[Crossref]

Y. Yang, Y. P. Li, C. X. Wang, C. Zhu, C. Y. Lv, X. Y. Ma, and D. R. Yang, “Rare-Earth Doped ZnO Films: A Material Platform to Realize Multicolor and Near-Infrared Electroluminescence,” Adv. Opt. Mater. 2(3), 240–244 (2014).
[Crossref]

Lysenko, V. S.

A. N. Nazarov, S. I. Tiagulskyi, I. P. Tyagulskyy, V. S. Lysenko, L. Rebohle, J. Lehmann, S. Prucnal, M. Voelskow, and W. Skorupa, “The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices,” J. Appl. Phys. 107(12), 123112 (2010).
[Crossref]

Ma, X.

Ma, X. Y.

C. Zhu, C. Y. Lv, M. M. Jiang, J. W. Zhou, D. S. Li, X. Y. Ma, and D. R. Yang, “Green electroluminescence from Tb4O7 films on silicon: impact excitation of Tb3+ ions by hot carriers,” Appl. Phys. Lett. 108(5), 051113 (2016).
[Crossref]

Y. Yang, Y. P. Li, C. X. Wang, C. Zhu, C. Y. Lv, X. Y. Ma, and D. R. Yang, “Rare-Earth Doped ZnO Films: A Material Platform to Realize Multicolor and Near-Infrared Electroluminescence,” Adv. Opt. Mater. 2(3), 240–244 (2014).
[Crossref]

Montserrat, J.

Moos, H. W.

N. Krasutsky and H. W. Moos, “Energy Transfer between the Low-Lying Energy Levels of Pr3+ and Nd3+ in LaCl3,” Phys. Rev. B 8(3), 1010–1020 (1973).
[Crossref]

Nazarov, A. N.

A. N. Nazarov, S. I. Tiagulskyi, I. P. Tyagulskyy, V. S. Lysenko, L. Rebohle, J. Lehmann, S. Prucnal, M. Voelskow, and W. Skorupa, “The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices,” J. Appl. Phys. 107(12), 123112 (2010).
[Crossref]

Park, H. D.

Y. Y. Choi, K. S. Sohn, H. D. Park, and S. Y. Choi, “Luminescence and decay behaviors of Tb-doped yttrium silicate,” J. Mater. Res. 16(3), 881–889 (2001).
[Crossref]

Park, S. I.

W. Kim, S. I. Park, Z. P. Zhang, and S. Wong, “Current Conduction Mechanism of Nitrogen-Doped AlOx RRAM,” IEEE Trans. Electron Dev. 61(6), 2158–2163 (2014).
[Crossref]

Penilla, E. H.

E. H. Penilla, Y. Kodera, and J. E. Garay, “Blue-Green Emission in Terbium-Doped Alumina (Tb: Al2O3) Transparent Ceramics,” Adv. Funct. Mater. 23(48), 6036–6043 (2013).
[Crossref]

Priolo, F.

S. Coffa, G. Franzò, and F. Priolo, “High efficiency and fast modulation of Er-doped light emitting Si diodes,” Appl. Phys. Lett. 69(14), 2077–2079 (1996).
[Crossref]

Prucnal, S.

L. Rebohle, J. Lehmann, S. Prucnal, M. Helm, and W. Skorupa, “The electrical and electroluminescence properties of rare earth implanted MOS light emitting devices in the near infrared,” J. Lumin. 132(12), 3151–3153 (2012).
[Crossref]

L. Rebohle, J. Lehmann, S. Prucnal, J. M. Sun, M. Helm, and W. Skorupa, “Physical limitations of the electroluminescence mechanism in terbium-based light emitters: matrix and layer thickness dependence,” Appl. Phys. B 98(2–3), 439–442 (2010).
[Crossref]

A. N. Nazarov, S. I. Tiagulskyi, I. P. Tyagulskyy, V. S. Lysenko, L. Rebohle, J. Lehmann, S. Prucnal, M. Voelskow, and W. Skorupa, “The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices,” J. Appl. Phys. 107(12), 123112 (2010).
[Crossref]

Ramirez, J. M.

S. Cueff, J. M. Ramirez, J. A. Kurvits, Y. Berencen, R. Zia, B. Garrido, R. Rizk, and Ch. Labbe, “Electroluminescence efficiencies of erbium in silicon-based hosts,” Appl. Phys. Lett. 103(19), 191109 (2013).
[Crossref]

Y. Berencen, R. Wutzler, L. Rebohle, D. Hiller, J. M. Ramirez, J. A. Rodriguez, W. Skorupa, and B. Garrido, “Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices,” Appl. Phys. Lett. 103(11), 111102 (2013).
[Crossref]

Rebohle, L.

L. Rebohle, M. Braun, R. Wutzler, B. Liu, J. M. Sun, M. Helm, and W. Skorupa, “Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition,” Appl. Phys. Lett. 104(25), 251113 (2014).
[Crossref]

Y. Berencen, R. Wutzler, L. Rebohle, D. Hiller, J. M. Ramirez, J. A. Rodriguez, W. Skorupa, and B. Garrido, “Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices,” Appl. Phys. Lett. 103(11), 111102 (2013).
[Crossref]

L. Rebohle, J. Lehmann, S. Prucnal, M. Helm, and W. Skorupa, “The electrical and electroluminescence properties of rare earth implanted MOS light emitting devices in the near infrared,” J. Lumin. 132(12), 3151–3153 (2012).
[Crossref]

A. N. Nazarov, S. I. Tiagulskyi, I. P. Tyagulskyy, V. S. Lysenko, L. Rebohle, J. Lehmann, S. Prucnal, M. Voelskow, and W. Skorupa, “The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices,” J. Appl. Phys. 107(12), 123112 (2010).
[Crossref]

L. Rebohle, J. Lehmann, S. Prucnal, J. M. Sun, M. Helm, and W. Skorupa, “Physical limitations of the electroluminescence mechanism in terbium-based light emitters: matrix and layer thickness dependence,” Appl. Phys. B 98(2–3), 439–442 (2010).
[Crossref]

J. M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, and T. Gebel, “Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices,” J. Appl. Phys. 97(12), 123513 (2005).
[Crossref]

Rizk, R.

S. Cueff, J. M. Ramirez, J. A. Kurvits, Y. Berencen, R. Zia, B. Garrido, R. Rizk, and Ch. Labbe, “Electroluminescence efficiencies of erbium in silicon-based hosts,” Appl. Phys. Lett. 103(19), 191109 (2013).
[Crossref]

O. Jambois, F. Gourbilleau, A. J. Kenyon, J. Montserrat, R. Rizk, and B. Garrido, “Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters,” Opt. Express 18(3), 2230–2235 (2010).
[Crossref] [PubMed]

O. Jambois, Y. Berencen, K. Hijazi, M. Wojdak, A. J. Kenyon, F. Gourbilleau, R. Rizk, and B. Garrido, “Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions,” J. Appl. Phys. 106(6), 063526 (2009).
[Crossref]

Rodriguez, J. A.

Y. Berencen, R. Wutzler, L. Rebohle, D. Hiller, J. M. Ramirez, J. A. Rodriguez, W. Skorupa, and B. Garrido, “Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices,” Appl. Phys. Lett. 103(11), 111102 (2013).
[Crossref]

Rossow, U.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: Increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Schwiegel, A.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: Increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Sha, Y.

Skorupa, W.

L. Rebohle, M. Braun, R. Wutzler, B. Liu, J. M. Sun, M. Helm, and W. Skorupa, “Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition,” Appl. Phys. Lett. 104(25), 251113 (2014).
[Crossref]

Y. Berencen, R. Wutzler, L. Rebohle, D. Hiller, J. M. Ramirez, J. A. Rodriguez, W. Skorupa, and B. Garrido, “Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices,” Appl. Phys. Lett. 103(11), 111102 (2013).
[Crossref]

L. Rebohle, J. Lehmann, S. Prucnal, M. Helm, and W. Skorupa, “The electrical and electroluminescence properties of rare earth implanted MOS light emitting devices in the near infrared,” J. Lumin. 132(12), 3151–3153 (2012).
[Crossref]

A. N. Nazarov, S. I. Tiagulskyi, I. P. Tyagulskyy, V. S. Lysenko, L. Rebohle, J. Lehmann, S. Prucnal, M. Voelskow, and W. Skorupa, “The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices,” J. Appl. Phys. 107(12), 123112 (2010).
[Crossref]

L. Rebohle, J. Lehmann, S. Prucnal, J. M. Sun, M. Helm, and W. Skorupa, “Physical limitations of the electroluminescence mechanism in terbium-based light emitters: matrix and layer thickness dependence,” Appl. Phys. B 98(2–3), 439–442 (2010).
[Crossref]

J. M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, and T. Gebel, “Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices,” J. Appl. Phys. 97(12), 123513 (2005).
[Crossref]

Sohn, K. S.

Y. Y. Choi, K. S. Sohn, H. D. Park, and S. Y. Choi, “Luminescence and decay behaviors of Tb-doped yttrium silicate,” J. Mater. Res. 16(3), 881–889 (2001).
[Crossref]

Sun, J. M.

L. Rebohle, M. Braun, R. Wutzler, B. Liu, J. M. Sun, M. Helm, and W. Skorupa, “Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition,” Appl. Phys. Lett. 104(25), 251113 (2014).
[Crossref]

L. Rebohle, J. Lehmann, S. Prucnal, J. M. Sun, M. Helm, and W. Skorupa, “Physical limitations of the electroluminescence mechanism in terbium-based light emitters: matrix and layer thickness dependence,” Appl. Phys. B 98(2–3), 439–442 (2010).
[Crossref]

J. M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, and T. Gebel, “Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices,” J. Appl. Phys. 97(12), 123513 (2005).
[Crossref]

Theis, T. N.

M. V. Fischetti, D. J. DiMaria, S. D. Brorson, T. N. Theis, and J. Kirtley, “Theory of high-field electron transport in silicon dioxide,” Phys. Rev. B Condens. Matter 31(12), 8124–8142 (1985).
[Crossref] [PubMed]

Tiagulskyi, S. I.

A. N. Nazarov, S. I. Tiagulskyi, I. P. Tyagulskyy, V. S. Lysenko, L. Rebohle, J. Lehmann, S. Prucnal, M. Voelskow, and W. Skorupa, “The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices,” J. Appl. Phys. 107(12), 123112 (2010).
[Crossref]

Tyagulskyy, I. P.

A. N. Nazarov, S. I. Tiagulskyi, I. P. Tyagulskyy, V. S. Lysenko, L. Rebohle, J. Lehmann, S. Prucnal, M. Voelskow, and W. Skorupa, “The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices,” J. Appl. Phys. 107(12), 123112 (2010).
[Crossref]

Voelskow, M.

A. N. Nazarov, S. I. Tiagulskyi, I. P. Tyagulskyy, V. S. Lysenko, L. Rebohle, J. Lehmann, S. Prucnal, M. Voelskow, and W. Skorupa, “The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices,” J. Appl. Phys. 107(12), 123112 (2010).
[Crossref]

Wang, C.

Wang, C. X.

Y. Yang, Y. P. Li, C. X. Wang, C. Zhu, C. Y. Lv, X. Y. Ma, and D. R. Yang, “Rare-Earth Doped ZnO Films: A Material Platform to Realize Multicolor and Near-Infrared Electroluminescence,” Adv. Opt. Mater. 2(3), 240–244 (2014).
[Crossref]

Wojdak, M.

O. Jambois, Y. Berencen, K. Hijazi, M. Wojdak, A. J. Kenyon, F. Gourbilleau, R. Rizk, and B. Garrido, “Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions,” J. Appl. Phys. 106(6), 063526 (2009).
[Crossref]

Wong, S.

W. Kim, S. I. Park, Z. P. Zhang, and S. Wong, “Current Conduction Mechanism of Nitrogen-Doped AlOx RRAM,” IEEE Trans. Electron Dev. 61(6), 2158–2163 (2014).
[Crossref]

Wu, C. L.

Wutzler, R.

L. Rebohle, M. Braun, R. Wutzler, B. Liu, J. M. Sun, M. Helm, and W. Skorupa, “Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition,” Appl. Phys. Lett. 104(25), 251113 (2014).
[Crossref]

Y. Berencen, R. Wutzler, L. Rebohle, D. Hiller, J. M. Ramirez, J. A. Rodriguez, W. Skorupa, and B. Garrido, “Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices,” Appl. Phys. Lett. 103(11), 111102 (2013).
[Crossref]

Yang, D.

Yang, D. R.

C. Zhu, C. Y. Lv, M. M. Jiang, J. W. Zhou, D. S. Li, X. Y. Ma, and D. R. Yang, “Green electroluminescence from Tb4O7 films on silicon: impact excitation of Tb3+ ions by hot carriers,” Appl. Phys. Lett. 108(5), 051113 (2016).
[Crossref]

Y. Yang, Y. P. Li, C. X. Wang, C. Zhu, C. Y. Lv, X. Y. Ma, and D. R. Yang, “Rare-Earth Doped ZnO Films: A Material Platform to Realize Multicolor and Near-Infrared Electroluminescence,” Adv. Opt. Mater. 2(3), 240–244 (2014).
[Crossref]

Yang, Y.

Y. Yang, Y. P. Li, C. X. Wang, C. Zhu, C. Y. Lv, X. Y. Ma, and D. R. Yang, “Rare-Earth Doped ZnO Films: A Material Platform to Realize Multicolor and Near-Infrared Electroluminescence,” Adv. Opt. Mater. 2(3), 240–244 (2014).
[Crossref]

Zhang, Z. P.

W. Kim, S. I. Park, Z. P. Zhang, and S. Wong, “Current Conduction Mechanism of Nitrogen-Doped AlOx RRAM,” IEEE Trans. Electron Dev. 61(6), 2158–2163 (2014).
[Crossref]

Zhou, J. W.

C. Zhu, C. Y. Lv, M. M. Jiang, J. W. Zhou, D. S. Li, X. Y. Ma, and D. R. Yang, “Green electroluminescence from Tb4O7 films on silicon: impact excitation of Tb3+ ions by hot carriers,” Appl. Phys. Lett. 108(5), 051113 (2016).
[Crossref]

Zhu, C.

C. Zhu, C. Y. Lv, M. M. Jiang, J. W. Zhou, D. S. Li, X. Y. Ma, and D. R. Yang, “Green electroluminescence from Tb4O7 films on silicon: impact excitation of Tb3+ ions by hot carriers,” Appl. Phys. Lett. 108(5), 051113 (2016).
[Crossref]

C. Zhu, C. Lv, C. Wang, Y. Sha, D. Li, X. Ma, and D. Yang, “Color-tunable electroluminescence from Eu-doped TiO2/p+-Si heterostructured devices: engineering of energy transfer,” Opt. Express 23(3), 2819–2826 (2015).
[Crossref] [PubMed]

Y. Yang, Y. P. Li, C. X. Wang, C. Zhu, C. Y. Lv, X. Y. Ma, and D. R. Yang, “Rare-Earth Doped ZnO Films: A Material Platform to Realize Multicolor and Near-Infrared Electroluminescence,” Adv. Opt. Mater. 2(3), 240–244 (2014).
[Crossref]

Zia, R.

S. Cueff, J. M. Ramirez, J. A. Kurvits, Y. Berencen, R. Zia, B. Garrido, R. Rizk, and Ch. Labbe, “Electroluminescence efficiencies of erbium in silicon-based hosts,” Appl. Phys. Lett. 103(19), 191109 (2013).
[Crossref]

Adv. Funct. Mater. (1)

E. H. Penilla, Y. Kodera, and J. E. Garay, “Blue-Green Emission in Terbium-Doped Alumina (Tb: Al2O3) Transparent Ceramics,” Adv. Funct. Mater. 23(48), 6036–6043 (2013).
[Crossref]

Adv. Mater. (1)

J. H. Kim and P. H. Holloway, “Near-Infrared-Electroluminescent Light-Emitting Planar Optical Sources Based on Gallium Nitride Doped with Rare Earths,” Adv. Mater. 17(1), 91–96 (2005).
[Crossref]

Adv. Opt. Mater. (1)

Y. Yang, Y. P. Li, C. X. Wang, C. Zhu, C. Y. Lv, X. Y. Ma, and D. R. Yang, “Rare-Earth Doped ZnO Films: A Material Platform to Realize Multicolor and Near-Infrared Electroluminescence,” Adv. Opt. Mater. 2(3), 240–244 (2014).
[Crossref]

Appl. Phys. B (1)

L. Rebohle, J. Lehmann, S. Prucnal, J. M. Sun, M. Helm, and W. Skorupa, “Physical limitations of the electroluminescence mechanism in terbium-based light emitters: matrix and layer thickness dependence,” Appl. Phys. B 98(2–3), 439–442 (2010).
[Crossref]

Appl. Phys. Lett. (5)

S. Coffa, G. Franzò, and F. Priolo, “High efficiency and fast modulation of Er-doped light emitting Si diodes,” Appl. Phys. Lett. 69(14), 2077–2079 (1996).
[Crossref]

Y. Berencen, R. Wutzler, L. Rebohle, D. Hiller, J. M. Ramirez, J. A. Rodriguez, W. Skorupa, and B. Garrido, “Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices,” Appl. Phys. Lett. 103(11), 111102 (2013).
[Crossref]

L. Rebohle, M. Braun, R. Wutzler, B. Liu, J. M. Sun, M. Helm, and W. Skorupa, “Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition,” Appl. Phys. Lett. 104(25), 251113 (2014).
[Crossref]

C. Zhu, C. Y. Lv, M. M. Jiang, J. W. Zhou, D. S. Li, X. Y. Ma, and D. R. Yang, “Green electroluminescence from Tb4O7 films on silicon: impact excitation of Tb3+ ions by hot carriers,” Appl. Phys. Lett. 108(5), 051113 (2016).
[Crossref]

S. Cueff, J. M. Ramirez, J. A. Kurvits, Y. Berencen, R. Zia, B. Garrido, R. Rizk, and Ch. Labbe, “Electroluminescence efficiencies of erbium in silicon-based hosts,” Appl. Phys. Lett. 103(19), 191109 (2013).
[Crossref]

IEEE Trans. Electron Dev. (1)

W. Kim, S. I. Park, Z. P. Zhang, and S. Wong, “Current Conduction Mechanism of Nitrogen-Doped AlOx RRAM,” IEEE Trans. Electron Dev. 61(6), 2158–2163 (2014).
[Crossref]

J. Appl. Phys. (3)

J. M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, and T. Gebel, “Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices,” J. Appl. Phys. 97(12), 123513 (2005).
[Crossref]

A. N. Nazarov, S. I. Tiagulskyi, I. P. Tyagulskyy, V. S. Lysenko, L. Rebohle, J. Lehmann, S. Prucnal, M. Voelskow, and W. Skorupa, “The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices,” J. Appl. Phys. 107(12), 123112 (2010).
[Crossref]

O. Jambois, Y. Berencen, K. Hijazi, M. Wojdak, A. J. Kenyon, F. Gourbilleau, R. Rizk, and B. Garrido, “Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions,” J. Appl. Phys. 106(6), 063526 (2009).
[Crossref]

J. Lumin. (1)

L. Rebohle, J. Lehmann, S. Prucnal, M. Helm, and W. Skorupa, “The electrical and electroluminescence properties of rare earth implanted MOS light emitting devices in the near infrared,” J. Lumin. 132(12), 3151–3153 (2012).
[Crossref]

J. Mater. Res. (1)

Y. Y. Choi, K. S. Sohn, H. D. Park, and S. Y. Choi, “Luminescence and decay behaviors of Tb-doped yttrium silicate,” J. Mater. Res. 16(3), 881–889 (2001).
[Crossref]

Opt. Express (3)

Phys. Rev. B (1)

N. Krasutsky and H. W. Moos, “Energy Transfer between the Low-Lying Energy Levels of Pr3+ and Nd3+ in LaCl3,” Phys. Rev. B 8(3), 1010–1020 (1973).
[Crossref]

Phys. Rev. B Condens. Matter (1)

M. V. Fischetti, D. J. DiMaria, S. D. Brorson, T. N. Theis, and J. Kirtley, “Theory of high-field electron transport in silicon dioxide,” Phys. Rev. B Condens. Matter 31(12), 8124–8142 (1985).
[Crossref] [PubMed]

Phys. Status Solidi., C Curr. Top. Solid State Phys. (1)

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: Increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Prog. Quantum Electron. (1)

A. J. Kenyon, “Recent developments in rare-earth doped materials for optoelectronics,” Prog. Quantum Electron. 26(4–5), 225–284 (2002).
[Crossref]

Other (1)

S. M. Sze, Physics of Semiconductor Devices (Wiley, 1981).

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Figures (5)

Fig. 1
Fig. 1 (a) EL spectra from the MOSLEDs based on the Al2O3/Tb2O3 films with different Tb dopant cycles, at the injection current of 50 μA. (b) The light-emitting images from the MOSLEDs in which the Al2O3: Tb2O3 sub-cycle ratio is 4:2, at different injection currents. The top-right inset shows the schematic diagram for the luminescent films.
Fig. 2
Fig. 2 (a) The dependence of representative green (543 nm) and blue (437 nm) EL intensities on the applied voltages, together with the I-V characteristics of the MOSLEDs based on different Al2O3/Tb2O3 films. (b) The dependence of the EL intensities on the current densities for these MOSLEDs.
Fig. 3
Fig. 3 (a) The decay traces of the 543 nm EL emissions from MOSLEDs based on different Al2O3/Tb2O3 films. (b) The plot of ln(J/E) versus E1/2 (Poole-Frenkel plots of the I-V characteristics) for these MOSLEDs.
Fig. 4
Fig. 4 (a) The dependence of the 543 nm EL intensities, together with the current densities, on the applied voltages for the MOSLEDs based on Al2O3/Tb2O3 films with different Al2O3 sublayers. (b) The EL decay time for the 543 nm and 437 nm EL emissions, and the EL intensity from single Tb2O3 dopant layer at 50 μA (25.5 mA cm−2), as a function of the thickness of Al2O3 sublayers.
Fig. 5
Fig. 5 (a) The excitation cross sections of the EL from 5D4 level as a function of the Tb concentration. (b) The dependence of external quantum efficiency and power efficiency on the current density for MOSLEDs based on different Al2O3/Tb2O3 films.

Tables (1)

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Table 1 The corresponding experimental parameters for clarity

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