Abstract

GaN-based semiconductor optical amplifier (SOA) and its integration with laser diode (LD) is an essential building block yet to be demonstrated for III-nitride photonic integrated circuits (PICs) at visible wavelength. This paper presents the InGaN/GaN quantum well (QW) based dual-section LD consisting of integrated amplifier and laser gain regions fabricated on a semipolar GaN substrate. The threshold current in the laser gain region was favorably reduced from 229mA to 135mA at SOA driving voltages, VSOA, of 0V and 6.25V, respectively. The amplification effect was measured based on a large gain of 5.7 dB at VSOA = 6.25V from the increased optical output power of 8.2 mW to 30.5 mW. Such integrated amplifier can be modulated to achieve Gbps data communication using on-off keying technique. The monolithically integrated amplifier-LD paves the way towards the III-nitride on-chip photonic system, providing a compact, low-cost, and multi-functional solution for applications such as smart lighting and visible light communications.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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References

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    [Crossref]

2017 (3)

X. M. Gao, J. L. Yuan, Y. C. Yang, Y. H. Li, W. Yuan, G. X. Zhu, H. B. Zhu, M. X. Feng, Q. Sun, Y. H. Liu, and Y. J. Wang, “A 30Mbps in-plane full-duplex light communication using a monolithic GaN photonic circuit,” Semicond. Sci. Technol. 32(7), 075002 (2017).
[Crossref]

C. Shen, C. Lee, E. Stegenburgs, J. H. Lerma, T. K. Ng, S. Nakamura, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system,” Appl. Phys. Express 10(4), 042201 (2017).
[Crossref]

C. Lee, C. Shen, C. Cozzan, R. M. Farrell, J. S. Speck, S. Nakamura, B. S. Ooi, and S. P. DenBaars, “Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors,” Opt. Express 25(15), 17480–17487 (2017).
[Crossref] [PubMed]

2016 (4)

2015 (3)

2014 (1)

C. L. Liao, C. L. Ho, Y. F. Chang, C. H. Wu, and M. C. Wu, “High-speed light-emitting diodes emitting at 500 nm with 463-MHz modulation bandwidth,” IEEE Electron Device Lett. 35(5), 563–565 (2014).
[Crossref]

2013 (2)

J.-L. Hou, S.-J. Chang, M.-C. Chen, C. H. Liu, T.-J. Hsueh, J.-K. Sheu, and S. Li, “GaN-based planar p-i-n photodetectors with the Be-implanted isolation ring,” IEEE Trans. Electron Dev. 60(3), 1178–1182 (2013).
[Crossref]

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar(2021¯) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting, ” J. Disp. Technol. 9(4), 190–198 (2013).
[Crossref]

2012 (1)

L. Sulmoni, J. M. Lamy, J. Dorsaz, A. Castiglia, J. F. Carlin, W. G. Scheibenzuber, U. T. Schwarz, X. Zeng, D. L. Boiko, and N. Grandjean, “Static and dynamic properties of multi-section InGaN-based laser diodes,” J. Appl. Phys. 112(10), 103112 (2012).
[Crossref]

2011 (2)

R. M. Farrell, D. A. Haeger, P. S. Hsu, M. C. Schmidt, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 99(17), 171113 (2011).
[Crossref]

L. A. Coldren, S. C. Nicholes, L. Johansson, S. Ristic, R. S. Guzzon, E. J. Norberg, and U. Krishnamachari, “High performance InP-based photonic ICs-a tutorial,” J. Lightwave Technol. 29(4), 554–570 (2011).
[Crossref]

2009 (2)

M. H. Crawford, “LEDs for solid-state lighting: performance challenges and recent advances,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1028–1040 (2009).
[Crossref]

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
[Crossref]

2002 (1)

M. Kneissl, T. L. Paoli, P. Kiesel, D. W. Treat, M. Teepe, N. Miyashita, and N. M. Johnson, “Two-section InGaN multiple-quantum-well laser diode with integrated electroabsorption modulator,” Appl. Phys. Lett. 80(18), 3283–3285 (2002).
[Crossref]

Alias, M. S.

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, “High-Modulation-Efficiency, Integrated Waveguide Modulator-Laser Diode at 448 nm,” ACS Photonics 3(2), 262–268 (2016).
[Crossref]

Alouini, M.-S.

Alyamani, A. Y.

C. Shen, C. Lee, E. Stegenburgs, J. H. Lerma, T. K. Ng, S. Nakamura, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system,” Appl. Phys. Express 10(4), 042201 (2017).
[Crossref]

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, “High-Modulation-Efficiency, Integrated Waveguide Modulator-Laser Diode at 448 nm,” ACS Photonics 3(2), 262–268 (2016).
[Crossref]

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications,” Opt. Lett. 41(11), 2608–2611 (2016).
[Crossref] [PubMed]

Boiko, D. L.

L. Sulmoni, J. M. Lamy, J. Dorsaz, A. Castiglia, J. F. Carlin, W. G. Scheibenzuber, U. T. Schwarz, X. Zeng, D. L. Boiko, and N. Grandjean, “Static and dynamic properties of multi-section InGaN-based laser diodes,” J. Appl. Phys. 112(10), 103112 (2012).
[Crossref]

Cai, W.

Cantore, M.

Carlin, J. F.

L. Sulmoni, J. M. Lamy, J. Dorsaz, A. Castiglia, J. F. Carlin, W. G. Scheibenzuber, U. T. Schwarz, X. Zeng, D. L. Boiko, and N. Grandjean, “Static and dynamic properties of multi-section InGaN-based laser diodes,” J. Appl. Phys. 112(10), 103112 (2012).
[Crossref]

Castiglia, A.

L. Sulmoni, J. M. Lamy, J. Dorsaz, A. Castiglia, J. F. Carlin, W. G. Scheibenzuber, U. T. Schwarz, X. Zeng, D. L. Boiko, and N. Grandjean, “Static and dynamic properties of multi-section InGaN-based laser diodes,” J. Appl. Phys. 112(10), 103112 (2012).
[Crossref]

Chang, C. C.

P. K. Shen, C. T. Chen, R. H. Chen, S. S. Lin, C. C. Chang, H. L. Hsiao, H. C. Lan, Y. C. Lee, Y. S. Lin, and M. L. Wu, “Chip-level optical interconnects using polymer waveguide integrated with laser/PD on silicon,” IEEE Photonics Technol. Lett. 27(13), 1359–1362 (2015).
[Crossref]

Chang, S.-J.

J.-L. Hou, S.-J. Chang, M.-C. Chen, C. H. Liu, T.-J. Hsueh, J.-K. Sheu, and S. Li, “GaN-based planar p-i-n photodetectors with the Be-implanted isolation ring,” IEEE Trans. Electron Dev. 60(3), 1178–1182 (2013).
[Crossref]

Chang, Y. F.

C. L. Liao, C. L. Ho, Y. F. Chang, C. H. Wu, and M. C. Wu, “High-speed light-emitting diodes emitting at 500 nm with 463-MHz modulation bandwidth,” IEEE Electron Device Lett. 35(5), 563–565 (2014).
[Crossref]

Chen, C. T.

P. K. Shen, C. T. Chen, R. H. Chen, S. S. Lin, C. C. Chang, H. L. Hsiao, H. C. Lan, Y. C. Lee, Y. S. Lin, and M. L. Wu, “Chip-level optical interconnects using polymer waveguide integrated with laser/PD on silicon,” IEEE Photonics Technol. Lett. 27(13), 1359–1362 (2015).
[Crossref]

Chen, M.-C.

J.-L. Hou, S.-J. Chang, M.-C. Chen, C. H. Liu, T.-J. Hsueh, J.-K. Sheu, and S. Li, “GaN-based planar p-i-n photodetectors with the Be-implanted isolation ring,” IEEE Trans. Electron Dev. 60(3), 1178–1182 (2013).
[Crossref]

Chen, R. H.

P. K. Shen, C. T. Chen, R. H. Chen, S. S. Lin, C. C. Chang, H. L. Hsiao, H. C. Lan, Y. C. Lee, Y. S. Lin, and M. L. Wu, “Chip-level optical interconnects using polymer waveguide integrated with laser/PD on silicon,” IEEE Photonics Technol. Lett. 27(13), 1359–1362 (2015).
[Crossref]

Coldren, L. A.

Cozzan, C.

Crawford, M. H.

M. H. Crawford, “LEDs for solid-state lighting: performance challenges and recent advances,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1028–1040 (2009).
[Crossref]

DenBaars, S. P.

C. Shen, C. Lee, E. Stegenburgs, J. H. Lerma, T. K. Ng, S. Nakamura, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system,” Appl. Phys. Express 10(4), 042201 (2017).
[Crossref]

C. Lee, C. Shen, C. Cozzan, R. M. Farrell, J. S. Speck, S. Nakamura, B. S. Ooi, and S. P. DenBaars, “Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors,” Opt. Express 25(15), 17480–17487 (2017).
[Crossref] [PubMed]

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications,” Opt. Lett. 41(11), 2608–2611 (2016).
[Crossref] [PubMed]

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, “High-Modulation-Efficiency, Integrated Waveguide Modulator-Laser Diode at 448 nm,” ACS Photonics 3(2), 262–268 (2016).
[Crossref]

C. Lee, C. Shen, H. M. Oubei, M. Cantore, B. Janjua, T. K. Ng, R. M. Farrell, M. M. El-Desouki, J. S. Speck, S. Nakamura, B. S. Ooi, and S. P. DenBaars, “2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system,” Opt. Express 23(23), 29779–29787 (2015).
[Crossref] [PubMed]

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar(2021¯) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting, ” J. Disp. Technol. 9(4), 190–198 (2013).
[Crossref]

R. M. Farrell, D. A. Haeger, P. S. Hsu, M. C. Schmidt, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 99(17), 171113 (2011).
[Crossref]

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
[Crossref]

Dorsaz, J.

L. Sulmoni, J. M. Lamy, J. Dorsaz, A. Castiglia, J. F. Carlin, W. G. Scheibenzuber, U. T. Schwarz, X. Zeng, D. L. Boiko, and N. Grandjean, “Static and dynamic properties of multi-section InGaN-based laser diodes,” J. Appl. Phys. 112(10), 103112 (2012).
[Crossref]

Eldesouki, M. M.

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, “High-Modulation-Efficiency, Integrated Waveguide Modulator-Laser Diode at 448 nm,” ACS Photonics 3(2), 262–268 (2016).
[Crossref]

El-Desouki, M. M.

Farrell, R. M.

Feezell, D. F.

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar(2021¯) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting, ” J. Disp. Technol. 9(4), 190–198 (2013).
[Crossref]

R. M. Farrell, D. A. Haeger, P. S. Hsu, M. C. Schmidt, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 99(17), 171113 (2011).
[Crossref]

Feng, M. X.

X. M. Gao, J. L. Yuan, Y. C. Yang, Y. H. Li, W. Yuan, G. X. Zhu, H. B. Zhu, M. X. Feng, Q. Sun, Y. H. Liu, and Y. J. Wang, “A 30Mbps in-plane full-duplex light communication using a monolithic GaN photonic circuit,” Semicond. Sci. Technol. 32(7), 075002 (2017).
[Crossref]

Fujito, K.

R. M. Farrell, D. A. Haeger, P. S. Hsu, M. C. Schmidt, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 99(17), 171113 (2011).
[Crossref]

Gao, X.

Gao, X. M.

X. M. Gao, J. L. Yuan, Y. C. Yang, Y. H. Li, W. Yuan, G. X. Zhu, H. B. Zhu, M. X. Feng, Q. Sun, Y. H. Liu, and Y. J. Wang, “A 30Mbps in-plane full-duplex light communication using a monolithic GaN photonic circuit,” Semicond. Sci. Technol. 32(7), 075002 (2017).
[Crossref]

Grandjean, N.

L. Sulmoni, J. M. Lamy, J. Dorsaz, A. Castiglia, J. F. Carlin, W. G. Scheibenzuber, U. T. Schwarz, X. Zeng, D. L. Boiko, and N. Grandjean, “Static and dynamic properties of multi-section InGaN-based laser diodes,” J. Appl. Phys. 112(10), 103112 (2012).
[Crossref]

Guo, Y.

Guzzon, R. S.

Haas, H.

Haeger, D. A.

R. M. Farrell, D. A. Haeger, P. S. Hsu, M. C. Schmidt, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 99(17), 171113 (2011).
[Crossref]

Ho, C. L.

C. L. Liao, C. L. Ho, Y. F. Chang, C. H. Wu, and M. C. Wu, “High-speed light-emitting diodes emitting at 500 nm with 463-MHz modulation bandwidth,” IEEE Electron Device Lett. 35(5), 563–565 (2014).
[Crossref]

Ho, K.-T.

Hou, J.-L.

J.-L. Hou, S.-J. Chang, M.-C. Chen, C. H. Liu, T.-J. Hsueh, J.-K. Sheu, and S. Li, “GaN-based planar p-i-n photodetectors with the Be-implanted isolation ring,” IEEE Trans. Electron Dev. 60(3), 1178–1182 (2013).
[Crossref]

Hsiao, H. L.

P. K. Shen, C. T. Chen, R. H. Chen, S. S. Lin, C. C. Chang, H. L. Hsiao, H. C. Lan, Y. C. Lee, Y. S. Lin, and M. L. Wu, “Chip-level optical interconnects using polymer waveguide integrated with laser/PD on silicon,” IEEE Photonics Technol. Lett. 27(13), 1359–1362 (2015).
[Crossref]

Hsu, P. S.

R. M. Farrell, D. A. Haeger, P. S. Hsu, M. C. Schmidt, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 99(17), 171113 (2011).
[Crossref]

Hsueh, T.-J.

J.-L. Hou, S.-J. Chang, M.-C. Chen, C. H. Liu, T.-J. Hsueh, J.-K. Sheu, and S. Li, “GaN-based planar p-i-n photodetectors with the Be-implanted isolation ring,” IEEE Trans. Electron Dev. 60(3), 1178–1182 (2013).
[Crossref]

Janjua, B.

Johansson, L.

Johnson, N. M.

M. Kneissl, T. L. Paoli, P. Kiesel, D. W. Treat, M. Teepe, N. Miyashita, and N. M. Johnson, “Two-section InGaN multiple-quantum-well laser diode with integrated electroabsorption modulator,” Appl. Phys. Lett. 80(18), 3283–3285 (2002).
[Crossref]

Kiesel, P.

M. Kneissl, T. L. Paoli, P. Kiesel, D. W. Treat, M. Teepe, N. Miyashita, and N. M. Johnson, “Two-section InGaN multiple-quantum-well laser diode with integrated electroabsorption modulator,” Appl. Phys. Lett. 80(18), 3283–3285 (2002).
[Crossref]

Kneissl, M.

M. Kneissl, T. L. Paoli, P. Kiesel, D. W. Treat, M. Teepe, N. Miyashita, and N. M. Johnson, “Two-section InGaN multiple-quantum-well laser diode with integrated electroabsorption modulator,” Appl. Phys. Lett. 80(18), 3283–3285 (2002).
[Crossref]

Krishnamachari, U.

Lamy, J. M.

L. Sulmoni, J. M. Lamy, J. Dorsaz, A. Castiglia, J. F. Carlin, W. G. Scheibenzuber, U. T. Schwarz, X. Zeng, D. L. Boiko, and N. Grandjean, “Static and dynamic properties of multi-section InGaN-based laser diodes,” J. Appl. Phys. 112(10), 103112 (2012).
[Crossref]

Lan, H. C.

P. K. Shen, C. T. Chen, R. H. Chen, S. S. Lin, C. C. Chang, H. L. Hsiao, H. C. Lan, Y. C. Lee, Y. S. Lin, and M. L. Wu, “Chip-level optical interconnects using polymer waveguide integrated with laser/PD on silicon,” IEEE Photonics Technol. Lett. 27(13), 1359–1362 (2015).
[Crossref]

Lee, C.

Lee, Y. C.

P. K. Shen, C. T. Chen, R. H. Chen, S. S. Lin, C. C. Chang, H. L. Hsiao, H. C. Lan, Y. C. Lee, Y. S. Lin, and M. L. Wu, “Chip-level optical interconnects using polymer waveguide integrated with laser/PD on silicon,” IEEE Photonics Technol. Lett. 27(13), 1359–1362 (2015).
[Crossref]

Leonard, J. T.

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications,” Opt. Lett. 41(11), 2608–2611 (2016).
[Crossref] [PubMed]

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, “High-Modulation-Efficiency, Integrated Waveguide Modulator-Laser Diode at 448 nm,” ACS Photonics 3(2), 262–268 (2016).
[Crossref]

Lerma, J. H.

C. Shen, C. Lee, E. Stegenburgs, J. H. Lerma, T. K. Ng, S. Nakamura, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system,” Appl. Phys. Express 10(4), 042201 (2017).
[Crossref]

Li, S.

J.-L. Hou, S.-J. Chang, M.-C. Chen, C. H. Liu, T.-J. Hsueh, J.-K. Sheu, and S. Li, “GaN-based planar p-i-n photodetectors with the Be-implanted isolation ring,” IEEE Trans. Electron Dev. 60(3), 1178–1182 (2013).
[Crossref]

Li, Y. H.

X. M. Gao, J. L. Yuan, Y. C. Yang, Y. H. Li, W. Yuan, G. X. Zhu, H. B. Zhu, M. X. Feng, Q. Sun, Y. H. Liu, and Y. J. Wang, “A 30Mbps in-plane full-duplex light communication using a monolithic GaN photonic circuit,” Semicond. Sci. Technol. 32(7), 075002 (2017).
[Crossref]

Liao, C. L.

C. L. Liao, C. L. Ho, Y. F. Chang, C. H. Wu, and M. C. Wu, “High-speed light-emitting diodes emitting at 500 nm with 463-MHz modulation bandwidth,” IEEE Electron Device Lett. 35(5), 563–565 (2014).
[Crossref]

Lin, S. S.

P. K. Shen, C. T. Chen, R. H. Chen, S. S. Lin, C. C. Chang, H. L. Hsiao, H. C. Lan, Y. C. Lee, Y. S. Lin, and M. L. Wu, “Chip-level optical interconnects using polymer waveguide integrated with laser/PD on silicon,” IEEE Photonics Technol. Lett. 27(13), 1359–1362 (2015).
[Crossref]

Lin, Y. S.

P. K. Shen, C. T. Chen, R. H. Chen, S. S. Lin, C. C. Chang, H. L. Hsiao, H. C. Lan, Y. C. Lee, Y. S. Lin, and M. L. Wu, “Chip-level optical interconnects using polymer waveguide integrated with laser/PD on silicon,” IEEE Photonics Technol. Lett. 27(13), 1359–1362 (2015).
[Crossref]

Liu, C. H.

J.-L. Hou, S.-J. Chang, M.-C. Chen, C. H. Liu, T.-J. Hsueh, J.-K. Sheu, and S. Li, “GaN-based planar p-i-n photodetectors with the Be-implanted isolation ring,” IEEE Trans. Electron Dev. 60(3), 1178–1182 (2013).
[Crossref]

Liu, G.

Liu, Y. H.

X. M. Gao, J. L. Yuan, Y. C. Yang, Y. H. Li, W. Yuan, G. X. Zhu, H. B. Zhu, M. X. Feng, Q. Sun, Y. H. Liu, and Y. J. Wang, “A 30Mbps in-plane full-duplex light communication using a monolithic GaN photonic circuit,” Semicond. Sci. Technol. 32(7), 075002 (2017).
[Crossref]

Miyashita, N.

M. Kneissl, T. L. Paoli, P. Kiesel, D. W. Treat, M. Teepe, N. Miyashita, and N. M. Johnson, “Two-section InGaN multiple-quantum-well laser diode with integrated electroabsorption modulator,” Appl. Phys. Lett. 80(18), 3283–3285 (2002).
[Crossref]

Nakamura, S.

C. Lee, C. Shen, C. Cozzan, R. M. Farrell, J. S. Speck, S. Nakamura, B. S. Ooi, and S. P. DenBaars, “Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors,” Opt. Express 25(15), 17480–17487 (2017).
[Crossref] [PubMed]

C. Shen, C. Lee, E. Stegenburgs, J. H. Lerma, T. K. Ng, S. Nakamura, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system,” Appl. Phys. Express 10(4), 042201 (2017).
[Crossref]

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications,” Opt. Lett. 41(11), 2608–2611 (2016).
[Crossref] [PubMed]

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, “High-Modulation-Efficiency, Integrated Waveguide Modulator-Laser Diode at 448 nm,” ACS Photonics 3(2), 262–268 (2016).
[Crossref]

C. Lee, C. Shen, H. M. Oubei, M. Cantore, B. Janjua, T. K. Ng, R. M. Farrell, M. M. El-Desouki, J. S. Speck, S. Nakamura, B. S. Ooi, and S. P. DenBaars, “2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system,” Opt. Express 23(23), 29779–29787 (2015).
[Crossref] [PubMed]

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar(2021¯) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting, ” J. Disp. Technol. 9(4), 190–198 (2013).
[Crossref]

R. M. Farrell, D. A. Haeger, P. S. Hsu, M. C. Schmidt, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 99(17), 171113 (2011).
[Crossref]

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
[Crossref]

Ng, T. K.

C. Shen, C. Lee, E. Stegenburgs, J. H. Lerma, T. K. Ng, S. Nakamura, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system,” Appl. Phys. Express 10(4), 042201 (2017).
[Crossref]

C. Shen, Y. Guo, H. M. Oubei, T. K. Ng, G. Liu, K.-H. Park, K.-T. Ho, M.-S. Alouini, and B. S. Ooi, “20-meter underwater wireless optical communication link with 1.5 Gbps data rate,” Opt. Express 24(22), 25502–25509 (2016).
[Crossref] [PubMed]

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, “High-Modulation-Efficiency, Integrated Waveguide Modulator-Laser Diode at 448 nm,” ACS Photonics 3(2), 262–268 (2016).
[Crossref]

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications,” Opt. Lett. 41(11), 2608–2611 (2016).
[Crossref] [PubMed]

C. Lee, C. Shen, H. M. Oubei, M. Cantore, B. Janjua, T. K. Ng, R. M. Farrell, M. M. El-Desouki, J. S. Speck, S. Nakamura, B. S. Ooi, and S. P. DenBaars, “2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system,” Opt. Express 23(23), 29779–29787 (2015).
[Crossref] [PubMed]

Nicholes, S. C.

Norberg, E. J.

Ooi, B. S.

C. Lee, C. Shen, C. Cozzan, R. M. Farrell, J. S. Speck, S. Nakamura, B. S. Ooi, and S. P. DenBaars, “Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors,” Opt. Express 25(15), 17480–17487 (2017).
[Crossref] [PubMed]

C. Shen, C. Lee, E. Stegenburgs, J. H. Lerma, T. K. Ng, S. Nakamura, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system,” Appl. Phys. Express 10(4), 042201 (2017).
[Crossref]

C. Shen, Y. Guo, H. M. Oubei, T. K. Ng, G. Liu, K.-H. Park, K.-T. Ho, M.-S. Alouini, and B. S. Ooi, “20-meter underwater wireless optical communication link with 1.5 Gbps data rate,” Opt. Express 24(22), 25502–25509 (2016).
[Crossref] [PubMed]

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications,” Opt. Lett. 41(11), 2608–2611 (2016).
[Crossref] [PubMed]

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, “High-Modulation-Efficiency, Integrated Waveguide Modulator-Laser Diode at 448 nm,” ACS Photonics 3(2), 262–268 (2016).
[Crossref]

C. Lee, C. Shen, H. M. Oubei, M. Cantore, B. Janjua, T. K. Ng, R. M. Farrell, M. M. El-Desouki, J. S. Speck, S. Nakamura, B. S. Ooi, and S. P. DenBaars, “2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system,” Opt. Express 23(23), 29779–29787 (2015).
[Crossref] [PubMed]

Oubei, H. M.

Paoli, T. L.

M. Kneissl, T. L. Paoli, P. Kiesel, D. W. Treat, M. Teepe, N. Miyashita, and N. M. Johnson, “Two-section InGaN multiple-quantum-well laser diode with integrated electroabsorption modulator,” Appl. Phys. Lett. 80(18), 3283–3285 (2002).
[Crossref]

Park, K.-H.

Pimputkar, S.

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
[Crossref]

Pourhashemi, A.

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, “High-Modulation-Efficiency, Integrated Waveguide Modulator-Laser Diode at 448 nm,” ACS Photonics 3(2), 262–268 (2016).
[Crossref]

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications,” Opt. Lett. 41(11), 2608–2611 (2016).
[Crossref] [PubMed]

Ristic, S.

Scheibenzuber, W. G.

L. Sulmoni, J. M. Lamy, J. Dorsaz, A. Castiglia, J. F. Carlin, W. G. Scheibenzuber, U. T. Schwarz, X. Zeng, D. L. Boiko, and N. Grandjean, “Static and dynamic properties of multi-section InGaN-based laser diodes,” J. Appl. Phys. 112(10), 103112 (2012).
[Crossref]

Schmidt, M. C.

R. M. Farrell, D. A. Haeger, P. S. Hsu, M. C. Schmidt, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 99(17), 171113 (2011).
[Crossref]

Schwarz, U. T.

L. Sulmoni, J. M. Lamy, J. Dorsaz, A. Castiglia, J. F. Carlin, W. G. Scheibenzuber, U. T. Schwarz, X. Zeng, D. L. Boiko, and N. Grandjean, “Static and dynamic properties of multi-section InGaN-based laser diodes,” J. Appl. Phys. 112(10), 103112 (2012).
[Crossref]

Shen, C.

C. Shen, C. Lee, E. Stegenburgs, J. H. Lerma, T. K. Ng, S. Nakamura, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system,” Appl. Phys. Express 10(4), 042201 (2017).
[Crossref]

C. Lee, C. Shen, C. Cozzan, R. M. Farrell, J. S. Speck, S. Nakamura, B. S. Ooi, and S. P. DenBaars, “Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors,” Opt. Express 25(15), 17480–17487 (2017).
[Crossref] [PubMed]

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications,” Opt. Lett. 41(11), 2608–2611 (2016).
[Crossref] [PubMed]

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, “High-Modulation-Efficiency, Integrated Waveguide Modulator-Laser Diode at 448 nm,” ACS Photonics 3(2), 262–268 (2016).
[Crossref]

C. Shen, Y. Guo, H. M. Oubei, T. K. Ng, G. Liu, K.-H. Park, K.-T. Ho, M.-S. Alouini, and B. S. Ooi, “20-meter underwater wireless optical communication link with 1.5 Gbps data rate,” Opt. Express 24(22), 25502–25509 (2016).
[Crossref] [PubMed]

C. Lee, C. Shen, H. M. Oubei, M. Cantore, B. Janjua, T. K. Ng, R. M. Farrell, M. M. El-Desouki, J. S. Speck, S. Nakamura, B. S. Ooi, and S. P. DenBaars, “2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system,” Opt. Express 23(23), 29779–29787 (2015).
[Crossref] [PubMed]

Shen, P. K.

P. K. Shen, C. T. Chen, R. H. Chen, S. S. Lin, C. C. Chang, H. L. Hsiao, H. C. Lan, Y. C. Lee, Y. S. Lin, and M. L. Wu, “Chip-level optical interconnects using polymer waveguide integrated with laser/PD on silicon,” IEEE Photonics Technol. Lett. 27(13), 1359–1362 (2015).
[Crossref]

Sheu, J.-K.

J.-L. Hou, S.-J. Chang, M.-C. Chen, C. H. Liu, T.-J. Hsueh, J.-K. Sheu, and S. Li, “GaN-based planar p-i-n photodetectors with the Be-implanted isolation ring,” IEEE Trans. Electron Dev. 60(3), 1178–1182 (2013).
[Crossref]

Speck, J. S.

C. Lee, C. Shen, C. Cozzan, R. M. Farrell, J. S. Speck, S. Nakamura, B. S. Ooi, and S. P. DenBaars, “Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors,” Opt. Express 25(15), 17480–17487 (2017).
[Crossref] [PubMed]

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications,” Opt. Lett. 41(11), 2608–2611 (2016).
[Crossref] [PubMed]

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, “High-Modulation-Efficiency, Integrated Waveguide Modulator-Laser Diode at 448 nm,” ACS Photonics 3(2), 262–268 (2016).
[Crossref]

C. Lee, C. Shen, H. M. Oubei, M. Cantore, B. Janjua, T. K. Ng, R. M. Farrell, M. M. El-Desouki, J. S. Speck, S. Nakamura, B. S. Ooi, and S. P. DenBaars, “2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system,” Opt. Express 23(23), 29779–29787 (2015).
[Crossref] [PubMed]

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar(2021¯) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting, ” J. Disp. Technol. 9(4), 190–198 (2013).
[Crossref]

R. M. Farrell, D. A. Haeger, P. S. Hsu, M. C. Schmidt, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 99(17), 171113 (2011).
[Crossref]

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
[Crossref]

Stegenburgs, E.

C. Shen, C. Lee, E. Stegenburgs, J. H. Lerma, T. K. Ng, S. Nakamura, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system,” Appl. Phys. Express 10(4), 042201 (2017).
[Crossref]

Sulmoni, L.

L. Sulmoni, J. M. Lamy, J. Dorsaz, A. Castiglia, J. F. Carlin, W. G. Scheibenzuber, U. T. Schwarz, X. Zeng, D. L. Boiko, and N. Grandjean, “Static and dynamic properties of multi-section InGaN-based laser diodes,” J. Appl. Phys. 112(10), 103112 (2012).
[Crossref]

Sun, Q.

X. M. Gao, J. L. Yuan, Y. C. Yang, Y. H. Li, W. Yuan, G. X. Zhu, H. B. Zhu, M. X. Feng, Q. Sun, Y. H. Liu, and Y. J. Wang, “A 30Mbps in-plane full-duplex light communication using a monolithic GaN photonic circuit,” Semicond. Sci. Technol. 32(7), 075002 (2017).
[Crossref]

Teepe, M.

M. Kneissl, T. L. Paoli, P. Kiesel, D. W. Treat, M. Teepe, N. Miyashita, and N. M. Johnson, “Two-section InGaN multiple-quantum-well laser diode with integrated electroabsorption modulator,” Appl. Phys. Lett. 80(18), 3283–3285 (2002).
[Crossref]

Treat, D. W.

M. Kneissl, T. L. Paoli, P. Kiesel, D. W. Treat, M. Teepe, N. Miyashita, and N. M. Johnson, “Two-section InGaN multiple-quantum-well laser diode with integrated electroabsorption modulator,” Appl. Phys. Lett. 80(18), 3283–3285 (2002).
[Crossref]

Tsonev, D.

Videv, S.

Wang, Y.

Wang, Y. J.

X. M. Gao, J. L. Yuan, Y. C. Yang, Y. H. Li, W. Yuan, G. X. Zhu, H. B. Zhu, M. X. Feng, Q. Sun, Y. H. Liu, and Y. J. Wang, “A 30Mbps in-plane full-duplex light communication using a monolithic GaN photonic circuit,” Semicond. Sci. Technol. 32(7), 075002 (2017).
[Crossref]

Wu, C. H.

C. L. Liao, C. L. Ho, Y. F. Chang, C. H. Wu, and M. C. Wu, “High-speed light-emitting diodes emitting at 500 nm with 463-MHz modulation bandwidth,” IEEE Electron Device Lett. 35(5), 563–565 (2014).
[Crossref]

Wu, M. C.

C. L. Liao, C. L. Ho, Y. F. Chang, C. H. Wu, and M. C. Wu, “High-speed light-emitting diodes emitting at 500 nm with 463-MHz modulation bandwidth,” IEEE Electron Device Lett. 35(5), 563–565 (2014).
[Crossref]

Wu, M. L.

P. K. Shen, C. T. Chen, R. H. Chen, S. S. Lin, C. C. Chang, H. L. Hsiao, H. C. Lan, Y. C. Lee, Y. S. Lin, and M. L. Wu, “Chip-level optical interconnects using polymer waveguide integrated with laser/PD on silicon,” IEEE Photonics Technol. Lett. 27(13), 1359–1362 (2015).
[Crossref]

Yang, Y.

Yang, Y. C.

X. M. Gao, J. L. Yuan, Y. C. Yang, Y. H. Li, W. Yuan, G. X. Zhu, H. B. Zhu, M. X. Feng, Q. Sun, Y. H. Liu, and Y. J. Wang, “A 30Mbps in-plane full-duplex light communication using a monolithic GaN photonic circuit,” Semicond. Sci. Technol. 32(7), 075002 (2017).
[Crossref]

Yuan, J.

Yuan, J. L.

X. M. Gao, J. L. Yuan, Y. C. Yang, Y. H. Li, W. Yuan, G. X. Zhu, H. B. Zhu, M. X. Feng, Q. Sun, Y. H. Liu, and Y. J. Wang, “A 30Mbps in-plane full-duplex light communication using a monolithic GaN photonic circuit,” Semicond. Sci. Technol. 32(7), 075002 (2017).
[Crossref]

Yuan, W.

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Figures (6)

Fig. 1
Fig. 1

(a) Cross-sectional layered structure and (b) 3D illustration of the 405-nm emitting dual-section integrated SOA-LD on semipolar GaN substrate. The device involves 4 pairs of In0.1Ga0.9N/GaN multi-quantum-wells (MQWs) as active region and a pair of InGaN separate confinement heterostructure waveguide layers. The length of the integrated SOA section and LD gain section is 300 µm and 1190 µm, respectively. Inset: Photo of the fabricated device under optical microscope. (c) Photo of the device operating at room temperature. (d) The emission spectrum of the device at a laser gain section current of 250 mA and zero SOA section driving voltage, showing a peak emission at ~404.3 nm.

Fig. 2
Fig. 2

(a) Optical output power vs. LD gain region current (ILD) relation of integrated SOA-LD with varying SOA driving voltage (VSOA) at room temperature. (b) L-I relation of a 1200 µm long LD and its comparison with that of integrating SOA-LD at VSOA of 0 V, 5 V, and 6 V.

Fig. 3
Fig. 3

(a) Optical power vs. VSOA and Ith vs. VSOA at ILD = 250 mA. (b) Voltage vs. current (V-I) relations of the integrated SOA section and LD gain section in the SOA-LD, and the 1200 µm long LD.

Fig. 4
Fig. 4

(a) Effective gain vs. ILD relation of the SOA-LD at different VSOA. (b) Effective gain vs. VSOA relation at ILD = 250 mA.

Fig. 5
Fig. 5

Emission spectra of the SOA-LD at ILD = 200 mA with VSOA = 0 V and 6.25 V. The amplification ratio (Ramp) is also shown with a peak Ramp of 18.4 at 404 nm.

Fig. 6
Fig. 6

(a) Schematic of the NRZ-OOK data transmission measurement using the SOA-LD as transmitter. BERT stands for bit error rate tester and DCA stands for digital communication analyzer. (b) Eye diagram of 1 Gbit/s data rate showing with a clear open eye.

Equations (1)

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effectivegain= P V SOA / P V=3.5V