Abstract

In this study, InSb p-i-n photodetectors with In0.82Al0.18Sb barrier layers were grown on a (100) 6° offcut Si substrate by heteroepitaxy via an AlSb/GaSb buffer. Based on an interfacial misfit array growth mode, the dislocations at the GaSb/Si and InSb/AlSb interfaces accommodated the lattice mismatch. The In0.82Al0.18Sb barrier layer increased the 77 K R0A of the detector. From 180 K to 300 K, the generation-recombination mechanism dominated the dark current generation in the detector and surface leakage became dominant below 120 K. The detector exhibited a 77 K responsivity of 0.475 A/W and a Johnson-noise-limited detectivity of 3.08 × 109 cmHz1/2W−1 at 5.3 µm.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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  7. Z.-H. Zhu, F. E. Ejeckam, Y. Qian, J. Zhang, Z. Zhang, G. L. Christenson, and Y. Lo, “Wafer bonding technology and its applications in optoelectronic devices and materials,” IEEE J. Sel. Top. Quantum Electron. 3(3), 927–936 (1997).
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    [Crossref]
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  20. M. De Giorgi, A. Taurino, A. Passaseo, M. Catalano, and R. Cingolani, “Interpretation of phase and strain contrast of TEM images of InxGa1-xAs/GaAs quantum dots,” Phys. Rev. B 63(24), 245302 (2001).
    [Crossref]
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  23. D. M. Hwang, S. A. Schwarz, T. S. Ravi, R. Bhat, and C. Y. Chen, “Strained-layer relaxation in fcc structures via the generation of partial dislocations,” Phys. Rev. Lett. 66(6), 739–742 (1991).
    [Crossref] [PubMed]
  24. V. Pusino, C. Xie, A. Khalid, M. J. Steer, M. Sorel, I. G. Thayne, and D. R. Cumming, “InSb Photodiodes for Monolithic Active Focal Plane Arrays on GaAs Substrates,” IEEE Trans. Electron Dev. 63(8), 3135–3142 (2016).
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    [Crossref]
  27. C. E. Jones, V. Nair, and D. L. Polla, “Generation‐recombination centers in p‐type Hg1-xCdxTe,” Appl. Phys. Lett. 39(3), 248–250 (1981).
    [Crossref]
  28. M. Erkus, O. Senel, and U. Serincan, “Structural, optical and electrical characterization of InAs0.83Sb0.17 p-π-n photodetector grown on GaAs substrate,” Thin Solid Films 616, 141–144 (2016).
    [Crossref]
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    [Crossref]
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    [Crossref]
  32. A. Evirgen, J. Abautret, J. Perez, A. Cordat, A. Nedelcu, and P. Christol, “Midwave infrared InSb nBn photodetector,” Electron. Lett. 50(20), 1472–1473 (2014).
    [Crossref]
  33. A. Tevke, C. Besikci, C. Van Hoof, and G. Borghs, “InSb infrared p–i–n photodetectors grown on GaAs coated Si substrates by molecular beam epitaxy,” Solid-State Electron. 42(6), 1039–1044 (1998).
    [Crossref]
  34. Z. Djuric, B. Livada, V. Jovic, M. Smiljanic, M. Matic, and Z. Lazic, “Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect,” Infrared Phys. 29(1), 1–7 (1989).
    [Crossref]

2017 (2)

V. M. Lavchiev and B. Jakoby, “Photonics in the Mid-Infrared: Challenges in Single-Chip Integration and Absorption Sensing,” IEEE J. Sel. Top. Quantum Electron. 23(2), 452 (2017).
[Crossref]

A. Spott, E. J. Stanton, N. Volet, J. D. Peters, J. R. Meyer, and J. E. Bowers, “Heterogeneous Integration for Mid-Infrared Silicon Photonics,” IEEE J. Sel. Top. Quantum Electron. 23(6), 1–10 (2017).
[Crossref]

2016 (2)

V. Pusino, C. Xie, A. Khalid, M. J. Steer, M. Sorel, I. G. Thayne, and D. R. Cumming, “InSb Photodiodes for Monolithic Active Focal Plane Arrays on GaAs Substrates,” IEEE Trans. Electron Dev. 63(8), 3135–3142 (2016).
[Crossref]

M. Erkus, O. Senel, and U. Serincan, “Structural, optical and electrical characterization of InAs0.83Sb0.17 p-π-n photodetector grown on GaAs substrate,” Thin Solid Films 616, 141–144 (2016).
[Crossref]

2015 (1)

B. W. Jia, K. H. Tan, W. K. Loke, S. Wicaksono, and S. F. Yoon, “Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations,” Mater. Lett. 158, 258–261 (2015).
[Crossref]

2014 (2)

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

A. Evirgen, J. Abautret, J. Perez, A. Cordat, A. Nedelcu, and P. Christol, “Midwave infrared InSb nBn photodetector,” Electron. Lett. 50(20), 1472–1473 (2014).
[Crossref]

2013 (2)

Y. Wang, P. Ruterana, S. Kret, S. El Kazzi, L. Desplanque, and X. Wallart, “The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism,” Appl. Phys. Lett. 102, 052102(2013).

K. Ueno, E. G. Camargo, T. Katsumata, H. Goto, N. Kuze, Y. Kangawa, and K. Kakimoto, “InSb mid-infrared photon detector for room-temperature operation,” Jpn. J. Appl. Phys. 52(9R), 092202 (2013).
[Crossref]

2012 (1)

S. Woo, S. Hosseini Vajargah, S. Ghanad-Tavakoli, R. Kleiman, and G. Botton, “Direct observation of anti-phase boundaries in heteroepitaxy of GaSb thin films grown on Si (001) by transmission electron microscopy,” J. Appl. Phys. 112(7), 074306 (2012).
[Crossref]

2011 (1)

G. Savich, J. Pedrazzani, D. Sidor, S. Maimon, and G. Wicks, “Dark current filtering in unipolar barrier infrared detectors,” Appl. Phys. Lett. 99(12), 121112 (2011).
[Crossref]

2010 (2)

R. Soref, “Mid-infrared photonics in silicon and germanium,” Nat. Photonics 4(8), 495–497 (2010).
[Crossref]

W. Tennant, ““Rule 07” revisited: Still a good heuristic predictor of p/n HgCdTe photodiode performance?” J. Electron. Mater. 39(7), 1030–1035 (2010).
[Crossref]

2009 (3)

W. Hu, X. Chen, F. Yin, Z. Quan, Z. Ye, X. Hu, Z. Li, and W. Lu, “Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors,” J. Appl. Phys. 105(10), 104502 (2009).
[Crossref]

A. Rogalski, J. Antoszewski, and L. Faraone, “Third-generation infrared photodetector arrays,” J. Appl. Phys. 105(9), 091101 (2009).
[Crossref]

T. Grassman, M. Brenner, S. Rajagopalan, R. Unocic, R. Dehoff, M. Mills, H. Fraser, and S. Ringel, “Control and elimination of nucleation-related defects in GaP/Si (001) heteroepitaxy,” Appl. Phys. Lett. 94(23), 232106 (2009).
[Crossref]

2008 (1)

S. H. Huang, G. Balakrishnan, A. Khoshakhlagh, L. R. Dawson, and D. L. Huffaker, “Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate,” Appl. Phys. Lett. 93(7), 071102 (2008).
[Crossref]

2006 (1)

Y. Kim, J. Lee, Y. Noh, M. Kim, Y. Kwon, J. Oh, and R. Gronsky, “Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study,” Appl. Phys. Lett. 89(3), 031919 (2006).
[Crossref]

2005 (1)

G. Balakrishnan, S. Huang, L. Dawson, Y.-C. Xin, P. Conlin, and D. Huffaker, “Growth mechanisms of highly mismatched AlSb on a Si substrate,” Appl. Phys. Lett. 86(3), 034105 (2005).
[Crossref]

2003 (2)

M. Mori, N. Akae, K. Uotani, N. Fujimoto, T. Tambo, and C. Tatsuyama, “Heteroepitaxial growth of InSb films on a Si (001) substrate via AlSb buffer layer,” Appl. Surf. Sci. 216(1-4), 569–574 (2003).
[Crossref]

A. Rogalski, “Infrared detectors: status and trends,” Prog. Quantum Electron. 27(2-3), 59–210 (2003).
[Crossref]

2002 (1)

A. A. Kosterev and F. K. Tittel, “Chemical sensors based on quantum cascade lasers,” IEEE J. Quantum Electron. 38(6), 582–591 (2002).
[Crossref]

2001 (1)

M. De Giorgi, A. Taurino, A. Passaseo, M. Catalano, and R. Cingolani, “Interpretation of phase and strain contrast of TEM images of InxGa1-xAs/GaAs quantum dots,” Phys. Rev. B 63(24), 245302 (2001).
[Crossref]

1998 (1)

A. Tevke, C. Besikci, C. Van Hoof, and G. Borghs, “InSb infrared p–i–n photodetectors grown on GaAs coated Si substrates by molecular beam epitaxy,” Solid-State Electron. 42(6), 1039–1044 (1998).
[Crossref]

1997 (2)

F. Fuchs, U. Weimer, W. Pletschen, J. Schmitz, E. Ahlswede, M. Walther, J. Wagner, and P. Koidl, “High performance InAs/Ga1-xInxSb superlattice infrared photodiodes,” Appl. Phys. Lett. 71(22), 3251–3253 (1997).
[Crossref]

Z.-H. Zhu, F. E. Ejeckam, Y. Qian, J. Zhang, Z. Zhang, G. L. Christenson, and Y. Lo, “Wafer bonding technology and its applications in optoelectronic devices and materials,” IEEE J. Sel. Top. Quantum Electron. 3(3), 927–936 (1997).
[Crossref]

1996 (1)

E. Michel, J. Xu, J. Kim, I. Ferguson, and M. Razeghi, “InSb infrared photodetectors on Si substrates grown by molecular beam epitaxy,” IEEE Photonics Technol. Lett. 8(5), 673–675 (1996).
[Crossref]

1992 (1)

G. E. Franklin, D. H. Rich, H. Hong, T. Miller, and T. Chiang, “Interface formation and growth of InSb on Si(100),” Phys. Rev. B Condens. Matter 45(7), 3426–3434 (1992).
[Crossref] [PubMed]

1991 (1)

D. M. Hwang, S. A. Schwarz, T. S. Ravi, R. Bhat, and C. Y. Chen, “Strained-layer relaxation in fcc structures via the generation of partial dislocations,” Phys. Rev. Lett. 66(6), 739–742 (1991).
[Crossref] [PubMed]

1990 (1)

S. Fang, K. Adomi, S. Iyer, H. Morkoc, H. Zabel, C. Choi, and N. Otsuka, “Gallium arsenide and other compound semiconductors on silicon,” J. Appl. Phys. 68(7), R31–R58 (1990).
[Crossref]

1989 (2)

Z. Djuric, B. Livada, V. Jovic, M. Smiljanic, M. Matic, and Z. Lazic, “Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect,” Infrared Phys. 29(1), 1–7 (1989).
[Crossref]

J. I. Chyi, D. Biswas, S. Iyer, N. Kumar, H. Morkoc, R. Bean, K. Zanio, H. Y. Lee, and H. Chen, “Molecular beam epitaxial growth and characterization of InSb on Si,” Appl. Phys. Lett. 54(11), 1016–1018 (1989).
[Crossref]

1981 (1)

C. E. Jones, V. Nair, and D. L. Polla, “Generation‐recombination centers in p‐type Hg1-xCdxTe,” Appl. Phys. Lett. 39(3), 248–250 (1981).
[Crossref]

Abautret, J.

A. Evirgen, J. Abautret, J. Perez, A. Cordat, A. Nedelcu, and P. Christol, “Midwave infrared InSb nBn photodetector,” Electron. Lett. 50(20), 1472–1473 (2014).
[Crossref]

Adomi, K.

S. Fang, K. Adomi, S. Iyer, H. Morkoc, H. Zabel, C. Choi, and N. Otsuka, “Gallium arsenide and other compound semiconductors on silicon,” J. Appl. Phys. 68(7), R31–R58 (1990).
[Crossref]

Ahlswede, E.

F. Fuchs, U. Weimer, W. Pletschen, J. Schmitz, E. Ahlswede, M. Walther, J. Wagner, and P. Koidl, “High performance InAs/Ga1-xInxSb superlattice infrared photodiodes,” Appl. Phys. Lett. 71(22), 3251–3253 (1997).
[Crossref]

Akae, N.

M. Mori, N. Akae, K. Uotani, N. Fujimoto, T. Tambo, and C. Tatsuyama, “Heteroepitaxial growth of InSb films on a Si (001) substrate via AlSb buffer layer,” Appl. Surf. Sci. 216(1-4), 569–574 (2003).
[Crossref]

Antoszewski, J.

A. Rogalski, J. Antoszewski, and L. Faraone, “Third-generation infrared photodetector arrays,” J. Appl. Phys. 105(9), 091101 (2009).
[Crossref]

Balakrishnan, G.

S. H. Huang, G. Balakrishnan, A. Khoshakhlagh, L. R. Dawson, and D. L. Huffaker, “Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate,” Appl. Phys. Lett. 93(7), 071102 (2008).
[Crossref]

G. Balakrishnan, S. Huang, L. Dawson, Y.-C. Xin, P. Conlin, and D. Huffaker, “Growth mechanisms of highly mismatched AlSb on a Si substrate,” Appl. Phys. Lett. 86(3), 034105 (2005).
[Crossref]

Bean, R.

J. I. Chyi, D. Biswas, S. Iyer, N. Kumar, H. Morkoc, R. Bean, K. Zanio, H. Y. Lee, and H. Chen, “Molecular beam epitaxial growth and characterization of InSb on Si,” Appl. Phys. Lett. 54(11), 1016–1018 (1989).
[Crossref]

Besikci, C.

A. Tevke, C. Besikci, C. Van Hoof, and G. Borghs, “InSb infrared p–i–n photodetectors grown on GaAs coated Si substrates by molecular beam epitaxy,” Solid-State Electron. 42(6), 1039–1044 (1998).
[Crossref]

Bhat, R.

D. M. Hwang, S. A. Schwarz, T. S. Ravi, R. Bhat, and C. Y. Chen, “Strained-layer relaxation in fcc structures via the generation of partial dislocations,” Phys. Rev. Lett. 66(6), 739–742 (1991).
[Crossref] [PubMed]

Biswas, D.

J. I. Chyi, D. Biswas, S. Iyer, N. Kumar, H. Morkoc, R. Bean, K. Zanio, H. Y. Lee, and H. Chen, “Molecular beam epitaxial growth and characterization of InSb on Si,” Appl. Phys. Lett. 54(11), 1016–1018 (1989).
[Crossref]

Borghs, G.

A. Tevke, C. Besikci, C. Van Hoof, and G. Borghs, “InSb infrared p–i–n photodetectors grown on GaAs coated Si substrates by molecular beam epitaxy,” Solid-State Electron. 42(6), 1039–1044 (1998).
[Crossref]

Botton, G.

S. Woo, S. Hosseini Vajargah, S. Ghanad-Tavakoli, R. Kleiman, and G. Botton, “Direct observation of anti-phase boundaries in heteroepitaxy of GaSb thin films grown on Si (001) by transmission electron microscopy,” J. Appl. Phys. 112(7), 074306 (2012).
[Crossref]

Bowers, J. E.

A. Spott, E. J. Stanton, N. Volet, J. D. Peters, J. R. Meyer, and J. E. Bowers, “Heterogeneous Integration for Mid-Infrared Silicon Photonics,” IEEE J. Sel. Top. Quantum Electron. 23(6), 1–10 (2017).
[Crossref]

Brenner, M.

T. Grassman, M. Brenner, S. Rajagopalan, R. Unocic, R. Dehoff, M. Mills, H. Fraser, and S. Ringel, “Control and elimination of nucleation-related defects in GaP/Si (001) heteroepitaxy,” Appl. Phys. Lett. 94(23), 232106 (2009).
[Crossref]

Camargo, E. G.

K. Ueno, E. G. Camargo, T. Katsumata, H. Goto, N. Kuze, Y. Kangawa, and K. Kakimoto, “InSb mid-infrared photon detector for room-temperature operation,” Jpn. J. Appl. Phys. 52(9R), 092202 (2013).
[Crossref]

Catalano, M.

M. De Giorgi, A. Taurino, A. Passaseo, M. Catalano, and R. Cingolani, “Interpretation of phase and strain contrast of TEM images of InxGa1-xAs/GaAs quantum dots,” Phys. Rev. B 63(24), 245302 (2001).
[Crossref]

Chen, C. Y.

D. M. Hwang, S. A. Schwarz, T. S. Ravi, R. Bhat, and C. Y. Chen, “Strained-layer relaxation in fcc structures via the generation of partial dislocations,” Phys. Rev. Lett. 66(6), 739–742 (1991).
[Crossref] [PubMed]

Chen, H.

J. I. Chyi, D. Biswas, S. Iyer, N. Kumar, H. Morkoc, R. Bean, K. Zanio, H. Y. Lee, and H. Chen, “Molecular beam epitaxial growth and characterization of InSb on Si,” Appl. Phys. Lett. 54(11), 1016–1018 (1989).
[Crossref]

Chen, X.

W. Hu, X. Chen, F. Yin, Z. Quan, Z. Ye, X. Hu, Z. Li, and W. Lu, “Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors,” J. Appl. Phys. 105(10), 104502 (2009).
[Crossref]

Chiang, T.

G. E. Franklin, D. H. Rich, H. Hong, T. Miller, and T. Chiang, “Interface formation and growth of InSb on Si(100),” Phys. Rev. B Condens. Matter 45(7), 3426–3434 (1992).
[Crossref] [PubMed]

Choi, C.

S. Fang, K. Adomi, S. Iyer, H. Morkoc, H. Zabel, C. Choi, and N. Otsuka, “Gallium arsenide and other compound semiconductors on silicon,” J. Appl. Phys. 68(7), R31–R58 (1990).
[Crossref]

Christenson, G. L.

Z.-H. Zhu, F. E. Ejeckam, Y. Qian, J. Zhang, Z. Zhang, G. L. Christenson, and Y. Lo, “Wafer bonding technology and its applications in optoelectronic devices and materials,” IEEE J. Sel. Top. Quantum Electron. 3(3), 927–936 (1997).
[Crossref]

Christol, P.

A. Evirgen, J. Abautret, J. Perez, A. Cordat, A. Nedelcu, and P. Christol, “Midwave infrared InSb nBn photodetector,” Electron. Lett. 50(20), 1472–1473 (2014).
[Crossref]

Chyi, J. I.

J. I. Chyi, D. Biswas, S. Iyer, N. Kumar, H. Morkoc, R. Bean, K. Zanio, H. Y. Lee, and H. Chen, “Molecular beam epitaxial growth and characterization of InSb on Si,” Appl. Phys. Lett. 54(11), 1016–1018 (1989).
[Crossref]

Cingolani, R.

M. De Giorgi, A. Taurino, A. Passaseo, M. Catalano, and R. Cingolani, “Interpretation of phase and strain contrast of TEM images of InxGa1-xAs/GaAs quantum dots,” Phys. Rev. B 63(24), 245302 (2001).
[Crossref]

Conley, B. R.

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

Conlin, P.

G. Balakrishnan, S. Huang, L. Dawson, Y.-C. Xin, P. Conlin, and D. Huffaker, “Growth mechanisms of highly mismatched AlSb on a Si substrate,” Appl. Phys. Lett. 86(3), 034105 (2005).
[Crossref]

Cordat, A.

A. Evirgen, J. Abautret, J. Perez, A. Cordat, A. Nedelcu, and P. Christol, “Midwave infrared InSb nBn photodetector,” Electron. Lett. 50(20), 1472–1473 (2014).
[Crossref]

Cumming, D. R.

V. Pusino, C. Xie, A. Khalid, M. J. Steer, M. Sorel, I. G. Thayne, and D. R. Cumming, “InSb Photodiodes for Monolithic Active Focal Plane Arrays on GaAs Substrates,” IEEE Trans. Electron Dev. 63(8), 3135–3142 (2016).
[Crossref]

Dawson, L.

G. Balakrishnan, S. Huang, L. Dawson, Y.-C. Xin, P. Conlin, and D. Huffaker, “Growth mechanisms of highly mismatched AlSb on a Si substrate,” Appl. Phys. Lett. 86(3), 034105 (2005).
[Crossref]

Dawson, L. R.

S. H. Huang, G. Balakrishnan, A. Khoshakhlagh, L. R. Dawson, and D. L. Huffaker, “Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate,” Appl. Phys. Lett. 93(7), 071102 (2008).
[Crossref]

De Giorgi, M.

M. De Giorgi, A. Taurino, A. Passaseo, M. Catalano, and R. Cingolani, “Interpretation of phase and strain contrast of TEM images of InxGa1-xAs/GaAs quantum dots,” Phys. Rev. B 63(24), 245302 (2001).
[Crossref]

Dehoff, R.

T. Grassman, M. Brenner, S. Rajagopalan, R. Unocic, R. Dehoff, M. Mills, H. Fraser, and S. Ringel, “Control and elimination of nucleation-related defects in GaP/Si (001) heteroepitaxy,” Appl. Phys. Lett. 94(23), 232106 (2009).
[Crossref]

Desplanque, L.

Y. Wang, P. Ruterana, S. Kret, S. El Kazzi, L. Desplanque, and X. Wallart, “The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism,” Appl. Phys. Lett. 102, 052102(2013).

Djuric, Z.

Z. Djuric, B. Livada, V. Jovic, M. Smiljanic, M. Matic, and Z. Lazic, “Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect,” Infrared Phys. 29(1), 1–7 (1989).
[Crossref]

Du, W.

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

Ejeckam, F. E.

Z.-H. Zhu, F. E. Ejeckam, Y. Qian, J. Zhang, Z. Zhang, G. L. Christenson, and Y. Lo, “Wafer bonding technology and its applications in optoelectronic devices and materials,” IEEE J. Sel. Top. Quantum Electron. 3(3), 927–936 (1997).
[Crossref]

El Kazzi, S.

Y. Wang, P. Ruterana, S. Kret, S. El Kazzi, L. Desplanque, and X. Wallart, “The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism,” Appl. Phys. Lett. 102, 052102(2013).

Erkus, M.

M. Erkus, O. Senel, and U. Serincan, “Structural, optical and electrical characterization of InAs0.83Sb0.17 p-π-n photodetector grown on GaAs substrate,” Thin Solid Films 616, 141–144 (2016).
[Crossref]

Evirgen, A.

A. Evirgen, J. Abautret, J. Perez, A. Cordat, A. Nedelcu, and P. Christol, “Midwave infrared InSb nBn photodetector,” Electron. Lett. 50(20), 1472–1473 (2014).
[Crossref]

Fang, S.

S. Fang, K. Adomi, S. Iyer, H. Morkoc, H. Zabel, C. Choi, and N. Otsuka, “Gallium arsenide and other compound semiconductors on silicon,” J. Appl. Phys. 68(7), R31–R58 (1990).
[Crossref]

Faraone, L.

A. Rogalski, J. Antoszewski, and L. Faraone, “Third-generation infrared photodetector arrays,” J. Appl. Phys. 105(9), 091101 (2009).
[Crossref]

Ferguson, I.

E. Michel, J. Xu, J. Kim, I. Ferguson, and M. Razeghi, “InSb infrared photodetectors on Si substrates grown by molecular beam epitaxy,” IEEE Photonics Technol. Lett. 8(5), 673–675 (1996).
[Crossref]

Franklin, G. E.

G. E. Franklin, D. H. Rich, H. Hong, T. Miller, and T. Chiang, “Interface formation and growth of InSb on Si(100),” Phys. Rev. B Condens. Matter 45(7), 3426–3434 (1992).
[Crossref] [PubMed]

Fraser, H.

T. Grassman, M. Brenner, S. Rajagopalan, R. Unocic, R. Dehoff, M. Mills, H. Fraser, and S. Ringel, “Control and elimination of nucleation-related defects in GaP/Si (001) heteroepitaxy,” Appl. Phys. Lett. 94(23), 232106 (2009).
[Crossref]

Fuchs, F.

F. Fuchs, U. Weimer, W. Pletschen, J. Schmitz, E. Ahlswede, M. Walther, J. Wagner, and P. Koidl, “High performance InAs/Ga1-xInxSb superlattice infrared photodiodes,” Appl. Phys. Lett. 71(22), 3251–3253 (1997).
[Crossref]

Fujimoto, N.

M. Mori, N. Akae, K. Uotani, N. Fujimoto, T. Tambo, and C. Tatsuyama, “Heteroepitaxial growth of InSb films on a Si (001) substrate via AlSb buffer layer,” Appl. Surf. Sci. 216(1-4), 569–574 (2003).
[Crossref]

Ghanad-Tavakoli, S.

S. Woo, S. Hosseini Vajargah, S. Ghanad-Tavakoli, R. Kleiman, and G. Botton, “Direct observation of anti-phase boundaries in heteroepitaxy of GaSb thin films grown on Si (001) by transmission electron microscopy,” J. Appl. Phys. 112(7), 074306 (2012).
[Crossref]

Ghetmiri, S. A.

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

Goto, H.

K. Ueno, E. G. Camargo, T. Katsumata, H. Goto, N. Kuze, Y. Kangawa, and K. Kakimoto, “InSb mid-infrared photon detector for room-temperature operation,” Jpn. J. Appl. Phys. 52(9R), 092202 (2013).
[Crossref]

Grassman, T.

T. Grassman, M. Brenner, S. Rajagopalan, R. Unocic, R. Dehoff, M. Mills, H. Fraser, and S. Ringel, “Control and elimination of nucleation-related defects in GaP/Si (001) heteroepitaxy,” Appl. Phys. Lett. 94(23), 232106 (2009).
[Crossref]

Gronsky, R.

Y. Kim, J. Lee, Y. Noh, M. Kim, Y. Kwon, J. Oh, and R. Gronsky, “Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study,” Appl. Phys. Lett. 89(3), 031919 (2006).
[Crossref]

Hong, H.

G. E. Franklin, D. H. Rich, H. Hong, T. Miller, and T. Chiang, “Interface formation and growth of InSb on Si(100),” Phys. Rev. B Condens. Matter 45(7), 3426–3434 (1992).
[Crossref] [PubMed]

Hosseini Vajargah, S.

S. Woo, S. Hosseini Vajargah, S. Ghanad-Tavakoli, R. Kleiman, and G. Botton, “Direct observation of anti-phase boundaries in heteroepitaxy of GaSb thin films grown on Si (001) by transmission electron microscopy,” J. Appl. Phys. 112(7), 074306 (2012).
[Crossref]

Hu, W.

W. Hu, X. Chen, F. Yin, Z. Quan, Z. Ye, X. Hu, Z. Li, and W. Lu, “Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors,” J. Appl. Phys. 105(10), 104502 (2009).
[Crossref]

Hu, X.

W. Hu, X. Chen, F. Yin, Z. Quan, Z. Ye, X. Hu, Z. Li, and W. Lu, “Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors,” J. Appl. Phys. 105(10), 104502 (2009).
[Crossref]

Huang, S.

G. Balakrishnan, S. Huang, L. Dawson, Y.-C. Xin, P. Conlin, and D. Huffaker, “Growth mechanisms of highly mismatched AlSb on a Si substrate,” Appl. Phys. Lett. 86(3), 034105 (2005).
[Crossref]

Huang, S. H.

S. H. Huang, G. Balakrishnan, A. Khoshakhlagh, L. R. Dawson, and D. L. Huffaker, “Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate,” Appl. Phys. Lett. 93(7), 071102 (2008).
[Crossref]

Huffaker, D.

G. Balakrishnan, S. Huang, L. Dawson, Y.-C. Xin, P. Conlin, and D. Huffaker, “Growth mechanisms of highly mismatched AlSb on a Si substrate,” Appl. Phys. Lett. 86(3), 034105 (2005).
[Crossref]

Huffaker, D. L.

S. H. Huang, G. Balakrishnan, A. Khoshakhlagh, L. R. Dawson, and D. L. Huffaker, “Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate,” Appl. Phys. Lett. 93(7), 071102 (2008).
[Crossref]

Hwang, D. M.

D. M. Hwang, S. A. Schwarz, T. S. Ravi, R. Bhat, and C. Y. Chen, “Strained-layer relaxation in fcc structures via the generation of partial dislocations,” Phys. Rev. Lett. 66(6), 739–742 (1991).
[Crossref] [PubMed]

Iyer, S.

S. Fang, K. Adomi, S. Iyer, H. Morkoc, H. Zabel, C. Choi, and N. Otsuka, “Gallium arsenide and other compound semiconductors on silicon,” J. Appl. Phys. 68(7), R31–R58 (1990).
[Crossref]

J. I. Chyi, D. Biswas, S. Iyer, N. Kumar, H. Morkoc, R. Bean, K. Zanio, H. Y. Lee, and H. Chen, “Molecular beam epitaxial growth and characterization of InSb on Si,” Appl. Phys. Lett. 54(11), 1016–1018 (1989).
[Crossref]

Jakoby, B.

V. M. Lavchiev and B. Jakoby, “Photonics in the Mid-Infrared: Challenges in Single-Chip Integration and Absorption Sensing,” IEEE J. Sel. Top. Quantum Electron. 23(2), 452 (2017).
[Crossref]

Jia, B. W.

B. W. Jia, K. H. Tan, W. K. Loke, S. Wicaksono, and S. F. Yoon, “Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations,” Mater. Lett. 158, 258–261 (2015).
[Crossref]

Jones, C. E.

C. E. Jones, V. Nair, and D. L. Polla, “Generation‐recombination centers in p‐type Hg1-xCdxTe,” Appl. Phys. Lett. 39(3), 248–250 (1981).
[Crossref]

Jovic, V.

Z. Djuric, B. Livada, V. Jovic, M. Smiljanic, M. Matic, and Z. Lazic, “Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect,” Infrared Phys. 29(1), 1–7 (1989).
[Crossref]

Kakimoto, K.

K. Ueno, E. G. Camargo, T. Katsumata, H. Goto, N. Kuze, Y. Kangawa, and K. Kakimoto, “InSb mid-infrared photon detector for room-temperature operation,” Jpn. J. Appl. Phys. 52(9R), 092202 (2013).
[Crossref]

Kangawa, Y.

K. Ueno, E. G. Camargo, T. Katsumata, H. Goto, N. Kuze, Y. Kangawa, and K. Kakimoto, “InSb mid-infrared photon detector for room-temperature operation,” Jpn. J. Appl. Phys. 52(9R), 092202 (2013).
[Crossref]

Katsumata, T.

K. Ueno, E. G. Camargo, T. Katsumata, H. Goto, N. Kuze, Y. Kangawa, and K. Kakimoto, “InSb mid-infrared photon detector for room-temperature operation,” Jpn. J. Appl. Phys. 52(9R), 092202 (2013).
[Crossref]

Khalid, A.

V. Pusino, C. Xie, A. Khalid, M. J. Steer, M. Sorel, I. G. Thayne, and D. R. Cumming, “InSb Photodiodes for Monolithic Active Focal Plane Arrays on GaAs Substrates,” IEEE Trans. Electron Dev. 63(8), 3135–3142 (2016).
[Crossref]

Khoshakhlagh, A.

S. H. Huang, G. Balakrishnan, A. Khoshakhlagh, L. R. Dawson, and D. L. Huffaker, “Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate,” Appl. Phys. Lett. 93(7), 071102 (2008).
[Crossref]

Kim, J.

E. Michel, J. Xu, J. Kim, I. Ferguson, and M. Razeghi, “InSb infrared photodetectors on Si substrates grown by molecular beam epitaxy,” IEEE Photonics Technol. Lett. 8(5), 673–675 (1996).
[Crossref]

Kim, M.

Y. Kim, J. Lee, Y. Noh, M. Kim, Y. Kwon, J. Oh, and R. Gronsky, “Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study,” Appl. Phys. Lett. 89(3), 031919 (2006).
[Crossref]

Kim, Y.

Y. Kim, J. Lee, Y. Noh, M. Kim, Y. Kwon, J. Oh, and R. Gronsky, “Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study,” Appl. Phys. Lett. 89(3), 031919 (2006).
[Crossref]

Kleiman, R.

S. Woo, S. Hosseini Vajargah, S. Ghanad-Tavakoli, R. Kleiman, and G. Botton, “Direct observation of anti-phase boundaries in heteroepitaxy of GaSb thin films grown on Si (001) by transmission electron microscopy,” J. Appl. Phys. 112(7), 074306 (2012).
[Crossref]

Koidl, P.

F. Fuchs, U. Weimer, W. Pletschen, J. Schmitz, E. Ahlswede, M. Walther, J. Wagner, and P. Koidl, “High performance InAs/Ga1-xInxSb superlattice infrared photodiodes,” Appl. Phys. Lett. 71(22), 3251–3253 (1997).
[Crossref]

Kosterev, A. A.

A. A. Kosterev and F. K. Tittel, “Chemical sensors based on quantum cascade lasers,” IEEE J. Quantum Electron. 38(6), 582–591 (2002).
[Crossref]

Kret, S.

Y. Wang, P. Ruterana, S. Kret, S. El Kazzi, L. Desplanque, and X. Wallart, “The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism,” Appl. Phys. Lett. 102, 052102(2013).

Kumar, N.

J. I. Chyi, D. Biswas, S. Iyer, N. Kumar, H. Morkoc, R. Bean, K. Zanio, H. Y. Lee, and H. Chen, “Molecular beam epitaxial growth and characterization of InSb on Si,” Appl. Phys. Lett. 54(11), 1016–1018 (1989).
[Crossref]

Kuze, N.

K. Ueno, E. G. Camargo, T. Katsumata, H. Goto, N. Kuze, Y. Kangawa, and K. Kakimoto, “InSb mid-infrared photon detector for room-temperature operation,” Jpn. J. Appl. Phys. 52(9R), 092202 (2013).
[Crossref]

Kwon, Y.

Y. Kim, J. Lee, Y. Noh, M. Kim, Y. Kwon, J. Oh, and R. Gronsky, “Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study,” Appl. Phys. Lett. 89(3), 031919 (2006).
[Crossref]

Lavchiev, V. M.

V. M. Lavchiev and B. Jakoby, “Photonics in the Mid-Infrared: Challenges in Single-Chip Integration and Absorption Sensing,” IEEE J. Sel. Top. Quantum Electron. 23(2), 452 (2017).
[Crossref]

Lazic, Z.

Z. Djuric, B. Livada, V. Jovic, M. Smiljanic, M. Matic, and Z. Lazic, “Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect,” Infrared Phys. 29(1), 1–7 (1989).
[Crossref]

Lee, H. Y.

J. I. Chyi, D. Biswas, S. Iyer, N. Kumar, H. Morkoc, R. Bean, K. Zanio, H. Y. Lee, and H. Chen, “Molecular beam epitaxial growth and characterization of InSb on Si,” Appl. Phys. Lett. 54(11), 1016–1018 (1989).
[Crossref]

Lee, J.

Y. Kim, J. Lee, Y. Noh, M. Kim, Y. Kwon, J. Oh, and R. Gronsky, “Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study,” Appl. Phys. Lett. 89(3), 031919 (2006).
[Crossref]

Li, B.

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

Li, Z.

W. Hu, X. Chen, F. Yin, Z. Quan, Z. Ye, X. Hu, Z. Li, and W. Lu, “Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors,” J. Appl. Phys. 105(10), 104502 (2009).
[Crossref]

Livada, B.

Z. Djuric, B. Livada, V. Jovic, M. Smiljanic, M. Matic, and Z. Lazic, “Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect,” Infrared Phys. 29(1), 1–7 (1989).
[Crossref]

Lo, Y.

Z.-H. Zhu, F. E. Ejeckam, Y. Qian, J. Zhang, Z. Zhang, G. L. Christenson, and Y. Lo, “Wafer bonding technology and its applications in optoelectronic devices and materials,” IEEE J. Sel. Top. Quantum Electron. 3(3), 927–936 (1997).
[Crossref]

Loke, W. K.

B. W. Jia, K. H. Tan, W. K. Loke, S. Wicaksono, and S. F. Yoon, “Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations,” Mater. Lett. 158, 258–261 (2015).
[Crossref]

Lu, W.

W. Hu, X. Chen, F. Yin, Z. Quan, Z. Ye, X. Hu, Z. Li, and W. Lu, “Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors,” J. Appl. Phys. 105(10), 104502 (2009).
[Crossref]

Maimon, S.

G. Savich, J. Pedrazzani, D. Sidor, S. Maimon, and G. Wicks, “Dark current filtering in unipolar barrier infrared detectors,” Appl. Phys. Lett. 99(12), 121112 (2011).
[Crossref]

Margetis, J.

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

Matic, M.

Z. Djuric, B. Livada, V. Jovic, M. Smiljanic, M. Matic, and Z. Lazic, “Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect,” Infrared Phys. 29(1), 1–7 (1989).
[Crossref]

Meyer, J. R.

A. Spott, E. J. Stanton, N. Volet, J. D. Peters, J. R. Meyer, and J. E. Bowers, “Heterogeneous Integration for Mid-Infrared Silicon Photonics,” IEEE J. Sel. Top. Quantum Electron. 23(6), 1–10 (2017).
[Crossref]

Michel, E.

E. Michel, J. Xu, J. Kim, I. Ferguson, and M. Razeghi, “InSb infrared photodetectors on Si substrates grown by molecular beam epitaxy,” IEEE Photonics Technol. Lett. 8(5), 673–675 (1996).
[Crossref]

Miller, T.

G. E. Franklin, D. H. Rich, H. Hong, T. Miller, and T. Chiang, “Interface formation and growth of InSb on Si(100),” Phys. Rev. B Condens. Matter 45(7), 3426–3434 (1992).
[Crossref] [PubMed]

Mills, M.

T. Grassman, M. Brenner, S. Rajagopalan, R. Unocic, R. Dehoff, M. Mills, H. Fraser, and S. Ringel, “Control and elimination of nucleation-related defects in GaP/Si (001) heteroepitaxy,” Appl. Phys. Lett. 94(23), 232106 (2009).
[Crossref]

Mori, M.

M. Mori, N. Akae, K. Uotani, N. Fujimoto, T. Tambo, and C. Tatsuyama, “Heteroepitaxial growth of InSb films on a Si (001) substrate via AlSb buffer layer,” Appl. Surf. Sci. 216(1-4), 569–574 (2003).
[Crossref]

Morkoc, H.

S. Fang, K. Adomi, S. Iyer, H. Morkoc, H. Zabel, C. Choi, and N. Otsuka, “Gallium arsenide and other compound semiconductors on silicon,” J. Appl. Phys. 68(7), R31–R58 (1990).
[Crossref]

J. I. Chyi, D. Biswas, S. Iyer, N. Kumar, H. Morkoc, R. Bean, K. Zanio, H. Y. Lee, and H. Chen, “Molecular beam epitaxial growth and characterization of InSb on Si,” Appl. Phys. Lett. 54(11), 1016–1018 (1989).
[Crossref]

Mosleh, A.

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

Nair, V.

C. E. Jones, V. Nair, and D. L. Polla, “Generation‐recombination centers in p‐type Hg1-xCdxTe,” Appl. Phys. Lett. 39(3), 248–250 (1981).
[Crossref]

Naseem, H. A.

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

Nedelcu, A.

A. Evirgen, J. Abautret, J. Perez, A. Cordat, A. Nedelcu, and P. Christol, “Midwave infrared InSb nBn photodetector,” Electron. Lett. 50(20), 1472–1473 (2014).
[Crossref]

Noh, Y.

Y. Kim, J. Lee, Y. Noh, M. Kim, Y. Kwon, J. Oh, and R. Gronsky, “Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study,” Appl. Phys. Lett. 89(3), 031919 (2006).
[Crossref]

Oh, J.

Y. Kim, J. Lee, Y. Noh, M. Kim, Y. Kwon, J. Oh, and R. Gronsky, “Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study,” Appl. Phys. Lett. 89(3), 031919 (2006).
[Crossref]

Otsuka, N.

S. Fang, K. Adomi, S. Iyer, H. Morkoc, H. Zabel, C. Choi, and N. Otsuka, “Gallium arsenide and other compound semiconductors on silicon,” J. Appl. Phys. 68(7), R31–R58 (1990).
[Crossref]

Passaseo, A.

M. De Giorgi, A. Taurino, A. Passaseo, M. Catalano, and R. Cingolani, “Interpretation of phase and strain contrast of TEM images of InxGa1-xAs/GaAs quantum dots,” Phys. Rev. B 63(24), 245302 (2001).
[Crossref]

Pedrazzani, J.

G. Savich, J. Pedrazzani, D. Sidor, S. Maimon, and G. Wicks, “Dark current filtering in unipolar barrier infrared detectors,” Appl. Phys. Lett. 99(12), 121112 (2011).
[Crossref]

Perez, J.

A. Evirgen, J. Abautret, J. Perez, A. Cordat, A. Nedelcu, and P. Christol, “Midwave infrared InSb nBn photodetector,” Electron. Lett. 50(20), 1472–1473 (2014).
[Crossref]

Peters, J. D.

A. Spott, E. J. Stanton, N. Volet, J. D. Peters, J. R. Meyer, and J. E. Bowers, “Heterogeneous Integration for Mid-Infrared Silicon Photonics,” IEEE J. Sel. Top. Quantum Electron. 23(6), 1–10 (2017).
[Crossref]

Pletschen, W.

F. Fuchs, U. Weimer, W. Pletschen, J. Schmitz, E. Ahlswede, M. Walther, J. Wagner, and P. Koidl, “High performance InAs/Ga1-xInxSb superlattice infrared photodiodes,” Appl. Phys. Lett. 71(22), 3251–3253 (1997).
[Crossref]

Polla, D. L.

C. E. Jones, V. Nair, and D. L. Polla, “Generation‐recombination centers in p‐type Hg1-xCdxTe,” Appl. Phys. Lett. 39(3), 248–250 (1981).
[Crossref]

Pusino, V.

V. Pusino, C. Xie, A. Khalid, M. J. Steer, M. Sorel, I. G. Thayne, and D. R. Cumming, “InSb Photodiodes for Monolithic Active Focal Plane Arrays on GaAs Substrates,” IEEE Trans. Electron Dev. 63(8), 3135–3142 (2016).
[Crossref]

Qian, Y.

Z.-H. Zhu, F. E. Ejeckam, Y. Qian, J. Zhang, Z. Zhang, G. L. Christenson, and Y. Lo, “Wafer bonding technology and its applications in optoelectronic devices and materials,” IEEE J. Sel. Top. Quantum Electron. 3(3), 927–936 (1997).
[Crossref]

Quan, Z.

W. Hu, X. Chen, F. Yin, Z. Quan, Z. Ye, X. Hu, Z. Li, and W. Lu, “Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors,” J. Appl. Phys. 105(10), 104502 (2009).
[Crossref]

Rajagopalan, S.

T. Grassman, M. Brenner, S. Rajagopalan, R. Unocic, R. Dehoff, M. Mills, H. Fraser, and S. Ringel, “Control and elimination of nucleation-related defects in GaP/Si (001) heteroepitaxy,” Appl. Phys. Lett. 94(23), 232106 (2009).
[Crossref]

Ravi, T. S.

D. M. Hwang, S. A. Schwarz, T. S. Ravi, R. Bhat, and C. Y. Chen, “Strained-layer relaxation in fcc structures via the generation of partial dislocations,” Phys. Rev. Lett. 66(6), 739–742 (1991).
[Crossref] [PubMed]

Razeghi, M.

E. Michel, J. Xu, J. Kim, I. Ferguson, and M. Razeghi, “InSb infrared photodetectors on Si substrates grown by molecular beam epitaxy,” IEEE Photonics Technol. Lett. 8(5), 673–675 (1996).
[Crossref]

Rich, D. H.

G. E. Franklin, D. H. Rich, H. Hong, T. Miller, and T. Chiang, “Interface formation and growth of InSb on Si(100),” Phys. Rev. B Condens. Matter 45(7), 3426–3434 (1992).
[Crossref] [PubMed]

Ringel, S.

T. Grassman, M. Brenner, S. Rajagopalan, R. Unocic, R. Dehoff, M. Mills, H. Fraser, and S. Ringel, “Control and elimination of nucleation-related defects in GaP/Si (001) heteroepitaxy,” Appl. Phys. Lett. 94(23), 232106 (2009).
[Crossref]

Rogalski, A.

A. Rogalski, J. Antoszewski, and L. Faraone, “Third-generation infrared photodetector arrays,” J. Appl. Phys. 105(9), 091101 (2009).
[Crossref]

A. Rogalski, “Infrared detectors: status and trends,” Prog. Quantum Electron. 27(2-3), 59–210 (2003).
[Crossref]

Ruterana, P.

Y. Wang, P. Ruterana, S. Kret, S. El Kazzi, L. Desplanque, and X. Wallart, “The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism,” Appl. Phys. Lett. 102, 052102(2013).

Savich, G.

G. Savich, J. Pedrazzani, D. Sidor, S. Maimon, and G. Wicks, “Dark current filtering in unipolar barrier infrared detectors,” Appl. Phys. Lett. 99(12), 121112 (2011).
[Crossref]

Schmitz, J.

F. Fuchs, U. Weimer, W. Pletschen, J. Schmitz, E. Ahlswede, M. Walther, J. Wagner, and P. Koidl, “High performance InAs/Ga1-xInxSb superlattice infrared photodiodes,” Appl. Phys. Lett. 71(22), 3251–3253 (1997).
[Crossref]

Schwarz, S. A.

D. M. Hwang, S. A. Schwarz, T. S. Ravi, R. Bhat, and C. Y. Chen, “Strained-layer relaxation in fcc structures via the generation of partial dislocations,” Phys. Rev. Lett. 66(6), 739–742 (1991).
[Crossref] [PubMed]

Senel, O.

M. Erkus, O. Senel, and U. Serincan, “Structural, optical and electrical characterization of InAs0.83Sb0.17 p-π-n photodetector grown on GaAs substrate,” Thin Solid Films 616, 141–144 (2016).
[Crossref]

Serincan, U.

M. Erkus, O. Senel, and U. Serincan, “Structural, optical and electrical characterization of InAs0.83Sb0.17 p-π-n photodetector grown on GaAs substrate,” Thin Solid Films 616, 141–144 (2016).
[Crossref]

Sidor, D.

G. Savich, J. Pedrazzani, D. Sidor, S. Maimon, and G. Wicks, “Dark current filtering in unipolar barrier infrared detectors,” Appl. Phys. Lett. 99(12), 121112 (2011).
[Crossref]

Smiljanic, M.

Z. Djuric, B. Livada, V. Jovic, M. Smiljanic, M. Matic, and Z. Lazic, “Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect,” Infrared Phys. 29(1), 1–7 (1989).
[Crossref]

Soref, R.

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

R. Soref, “Mid-infrared photonics in silicon and germanium,” Nat. Photonics 4(8), 495–497 (2010).
[Crossref]

Sorel, M.

V. Pusino, C. Xie, A. Khalid, M. J. Steer, M. Sorel, I. G. Thayne, and D. R. Cumming, “InSb Photodiodes for Monolithic Active Focal Plane Arrays on GaAs Substrates,” IEEE Trans. Electron Dev. 63(8), 3135–3142 (2016).
[Crossref]

Spott, A.

A. Spott, E. J. Stanton, N. Volet, J. D. Peters, J. R. Meyer, and J. E. Bowers, “Heterogeneous Integration for Mid-Infrared Silicon Photonics,” IEEE J. Sel. Top. Quantum Electron. 23(6), 1–10 (2017).
[Crossref]

Stanton, E. J.

A. Spott, E. J. Stanton, N. Volet, J. D. Peters, J. R. Meyer, and J. E. Bowers, “Heterogeneous Integration for Mid-Infrared Silicon Photonics,” IEEE J. Sel. Top. Quantum Electron. 23(6), 1–10 (2017).
[Crossref]

Steer, M. J.

V. Pusino, C. Xie, A. Khalid, M. J. Steer, M. Sorel, I. G. Thayne, and D. R. Cumming, “InSb Photodiodes for Monolithic Active Focal Plane Arrays on GaAs Substrates,” IEEE Trans. Electron Dev. 63(8), 3135–3142 (2016).
[Crossref]

Sun, G.

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

Tambo, T.

M. Mori, N. Akae, K. Uotani, N. Fujimoto, T. Tambo, and C. Tatsuyama, “Heteroepitaxial growth of InSb films on a Si (001) substrate via AlSb buffer layer,” Appl. Surf. Sci. 216(1-4), 569–574 (2003).
[Crossref]

Tan, K. H.

B. W. Jia, K. H. Tan, W. K. Loke, S. Wicaksono, and S. F. Yoon, “Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations,” Mater. Lett. 158, 258–261 (2015).
[Crossref]

Tatsuyama, C.

M. Mori, N. Akae, K. Uotani, N. Fujimoto, T. Tambo, and C. Tatsuyama, “Heteroepitaxial growth of InSb films on a Si (001) substrate via AlSb buffer layer,” Appl. Surf. Sci. 216(1-4), 569–574 (2003).
[Crossref]

Taurino, A.

M. De Giorgi, A. Taurino, A. Passaseo, M. Catalano, and R. Cingolani, “Interpretation of phase and strain contrast of TEM images of InxGa1-xAs/GaAs quantum dots,” Phys. Rev. B 63(24), 245302 (2001).
[Crossref]

Tennant, W.

W. Tennant, ““Rule 07” revisited: Still a good heuristic predictor of p/n HgCdTe photodiode performance?” J. Electron. Mater. 39(7), 1030–1035 (2010).
[Crossref]

Tevke, A.

A. Tevke, C. Besikci, C. Van Hoof, and G. Borghs, “InSb infrared p–i–n photodetectors grown on GaAs coated Si substrates by molecular beam epitaxy,” Solid-State Electron. 42(6), 1039–1044 (1998).
[Crossref]

Thayne, I. G.

V. Pusino, C. Xie, A. Khalid, M. J. Steer, M. Sorel, I. G. Thayne, and D. R. Cumming, “InSb Photodiodes for Monolithic Active Focal Plane Arrays on GaAs Substrates,” IEEE Trans. Electron Dev. 63(8), 3135–3142 (2016).
[Crossref]

Tittel, F. K.

A. A. Kosterev and F. K. Tittel, “Chemical sensors based on quantum cascade lasers,” IEEE J. Quantum Electron. 38(6), 582–591 (2002).
[Crossref]

Tolle, J.

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

Tran, H.

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

Ueno, K.

K. Ueno, E. G. Camargo, T. Katsumata, H. Goto, N. Kuze, Y. Kangawa, and K. Kakimoto, “InSb mid-infrared photon detector for room-temperature operation,” Jpn. J. Appl. Phys. 52(9R), 092202 (2013).
[Crossref]

Unocic, R.

T. Grassman, M. Brenner, S. Rajagopalan, R. Unocic, R. Dehoff, M. Mills, H. Fraser, and S. Ringel, “Control and elimination of nucleation-related defects in GaP/Si (001) heteroepitaxy,” Appl. Phys. Lett. 94(23), 232106 (2009).
[Crossref]

Uotani, K.

M. Mori, N. Akae, K. Uotani, N. Fujimoto, T. Tambo, and C. Tatsuyama, “Heteroepitaxial growth of InSb films on a Si (001) substrate via AlSb buffer layer,” Appl. Surf. Sci. 216(1-4), 569–574 (2003).
[Crossref]

Van Hoof, C.

A. Tevke, C. Besikci, C. Van Hoof, and G. Borghs, “InSb infrared p–i–n photodetectors grown on GaAs coated Si substrates by molecular beam epitaxy,” Solid-State Electron. 42(6), 1039–1044 (1998).
[Crossref]

Volet, N.

A. Spott, E. J. Stanton, N. Volet, J. D. Peters, J. R. Meyer, and J. E. Bowers, “Heterogeneous Integration for Mid-Infrared Silicon Photonics,” IEEE J. Sel. Top. Quantum Electron. 23(6), 1–10 (2017).
[Crossref]

Wagner, J.

F. Fuchs, U. Weimer, W. Pletschen, J. Schmitz, E. Ahlswede, M. Walther, J. Wagner, and P. Koidl, “High performance InAs/Ga1-xInxSb superlattice infrared photodiodes,” Appl. Phys. Lett. 71(22), 3251–3253 (1997).
[Crossref]

Wallart, X.

Y. Wang, P. Ruterana, S. Kret, S. El Kazzi, L. Desplanque, and X. Wallart, “The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism,” Appl. Phys. Lett. 102, 052102(2013).

Walther, M.

F. Fuchs, U. Weimer, W. Pletschen, J. Schmitz, E. Ahlswede, M. Walther, J. Wagner, and P. Koidl, “High performance InAs/Ga1-xInxSb superlattice infrared photodiodes,” Appl. Phys. Lett. 71(22), 3251–3253 (1997).
[Crossref]

Wang, Y.

Y. Wang, P. Ruterana, S. Kret, S. El Kazzi, L. Desplanque, and X. Wallart, “The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism,” Appl. Phys. Lett. 102, 052102(2013).

Weimer, U.

F. Fuchs, U. Weimer, W. Pletschen, J. Schmitz, E. Ahlswede, M. Walther, J. Wagner, and P. Koidl, “High performance InAs/Ga1-xInxSb superlattice infrared photodiodes,” Appl. Phys. Lett. 71(22), 3251–3253 (1997).
[Crossref]

Wicaksono, S.

B. W. Jia, K. H. Tan, W. K. Loke, S. Wicaksono, and S. F. Yoon, “Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations,” Mater. Lett. 158, 258–261 (2015).
[Crossref]

Wicks, G.

G. Savich, J. Pedrazzani, D. Sidor, S. Maimon, and G. Wicks, “Dark current filtering in unipolar barrier infrared detectors,” Appl. Phys. Lett. 99(12), 121112 (2011).
[Crossref]

Woo, S.

S. Woo, S. Hosseini Vajargah, S. Ghanad-Tavakoli, R. Kleiman, and G. Botton, “Direct observation of anti-phase boundaries in heteroepitaxy of GaSb thin films grown on Si (001) by transmission electron microscopy,” J. Appl. Phys. 112(7), 074306 (2012).
[Crossref]

Xie, C.

V. Pusino, C. Xie, A. Khalid, M. J. Steer, M. Sorel, I. G. Thayne, and D. R. Cumming, “InSb Photodiodes for Monolithic Active Focal Plane Arrays on GaAs Substrates,” IEEE Trans. Electron Dev. 63(8), 3135–3142 (2016).
[Crossref]

Xin, Y.-C.

G. Balakrishnan, S. Huang, L. Dawson, Y.-C. Xin, P. Conlin, and D. Huffaker, “Growth mechanisms of highly mismatched AlSb on a Si substrate,” Appl. Phys. Lett. 86(3), 034105 (2005).
[Crossref]

Xu, J.

E. Michel, J. Xu, J. Kim, I. Ferguson, and M. Razeghi, “InSb infrared photodetectors on Si substrates grown by molecular beam epitaxy,” IEEE Photonics Technol. Lett. 8(5), 673–675 (1996).
[Crossref]

Ye, Z.

W. Hu, X. Chen, F. Yin, Z. Quan, Z. Ye, X. Hu, Z. Li, and W. Lu, “Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors,” J. Appl. Phys. 105(10), 104502 (2009).
[Crossref]

Yin, F.

W. Hu, X. Chen, F. Yin, Z. Quan, Z. Ye, X. Hu, Z. Li, and W. Lu, “Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors,” J. Appl. Phys. 105(10), 104502 (2009).
[Crossref]

Yoon, S. F.

B. W. Jia, K. H. Tan, W. K. Loke, S. Wicaksono, and S. F. Yoon, “Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations,” Mater. Lett. 158, 258–261 (2015).
[Crossref]

Yu, S.-Q.

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

Zabel, H.

S. Fang, K. Adomi, S. Iyer, H. Morkoc, H. Zabel, C. Choi, and N. Otsuka, “Gallium arsenide and other compound semiconductors on silicon,” J. Appl. Phys. 68(7), R31–R58 (1990).
[Crossref]

Zanio, K.

J. I. Chyi, D. Biswas, S. Iyer, N. Kumar, H. Morkoc, R. Bean, K. Zanio, H. Y. Lee, and H. Chen, “Molecular beam epitaxial growth and characterization of InSb on Si,” Appl. Phys. Lett. 54(11), 1016–1018 (1989).
[Crossref]

Zhang, J.

Z.-H. Zhu, F. E. Ejeckam, Y. Qian, J. Zhang, Z. Zhang, G. L. Christenson, and Y. Lo, “Wafer bonding technology and its applications in optoelectronic devices and materials,” IEEE J. Sel. Top. Quantum Electron. 3(3), 927–936 (1997).
[Crossref]

Zhang, Z.

Z.-H. Zhu, F. E. Ejeckam, Y. Qian, J. Zhang, Z. Zhang, G. L. Christenson, and Y. Lo, “Wafer bonding technology and its applications in optoelectronic devices and materials,” IEEE J. Sel. Top. Quantum Electron. 3(3), 927–936 (1997).
[Crossref]

Zhu, Z.-H.

Z.-H. Zhu, F. E. Ejeckam, Y. Qian, J. Zhang, Z. Zhang, G. L. Christenson, and Y. Lo, “Wafer bonding technology and its applications in optoelectronic devices and materials,” IEEE J. Sel. Top. Quantum Electron. 3(3), 927–936 (1997).
[Crossref]

Appl. Phys. Lett. (10)

J. I. Chyi, D. Biswas, S. Iyer, N. Kumar, H. Morkoc, R. Bean, K. Zanio, H. Y. Lee, and H. Chen, “Molecular beam epitaxial growth and characterization of InSb on Si,” Appl. Phys. Lett. 54(11), 1016–1018 (1989).
[Crossref]

G. Balakrishnan, S. Huang, L. Dawson, Y.-C. Xin, P. Conlin, and D. Huffaker, “Growth mechanisms of highly mismatched AlSb on a Si substrate,” Appl. Phys. Lett. 86(3), 034105 (2005).
[Crossref]

S. H. Huang, G. Balakrishnan, A. Khoshakhlagh, L. R. Dawson, and D. L. Huffaker, “Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate,” Appl. Phys. Lett. 93(7), 071102 (2008).
[Crossref]

T. Grassman, M. Brenner, S. Rajagopalan, R. Unocic, R. Dehoff, M. Mills, H. Fraser, and S. Ringel, “Control and elimination of nucleation-related defects in GaP/Si (001) heteroepitaxy,” Appl. Phys. Lett. 94(23), 232106 (2009).
[Crossref]

G. Savich, J. Pedrazzani, D. Sidor, S. Maimon, and G. Wicks, “Dark current filtering in unipolar barrier infrared detectors,” Appl. Phys. Lett. 99(12), 121112 (2011).
[Crossref]

Y. Kim, J. Lee, Y. Noh, M. Kim, Y. Kwon, J. Oh, and R. Gronsky, “Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study,” Appl. Phys. Lett. 89(3), 031919 (2006).
[Crossref]

Y. Wang, P. Ruterana, S. Kret, S. El Kazzi, L. Desplanque, and X. Wallart, “The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism,” Appl. Phys. Lett. 102, 052102(2013).

C. E. Jones, V. Nair, and D. L. Polla, “Generation‐recombination centers in p‐type Hg1-xCdxTe,” Appl. Phys. Lett. 39(3), 248–250 (1981).
[Crossref]

B. R. Conley, J. Margetis, W. Du, H. Tran, A. Mosleh, S. A. Ghetmiri, J. Tolle, G. Sun, R. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, “Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff,” Appl. Phys. Lett. 105(22), 221117 (2014).
[Crossref]

F. Fuchs, U. Weimer, W. Pletschen, J. Schmitz, E. Ahlswede, M. Walther, J. Wagner, and P. Koidl, “High performance InAs/Ga1-xInxSb superlattice infrared photodiodes,” Appl. Phys. Lett. 71(22), 3251–3253 (1997).
[Crossref]

Appl. Surf. Sci. (1)

M. Mori, N. Akae, K. Uotani, N. Fujimoto, T. Tambo, and C. Tatsuyama, “Heteroepitaxial growth of InSb films on a Si (001) substrate via AlSb buffer layer,” Appl. Surf. Sci. 216(1-4), 569–574 (2003).
[Crossref]

Electron. Lett. (1)

A. Evirgen, J. Abautret, J. Perez, A. Cordat, A. Nedelcu, and P. Christol, “Midwave infrared InSb nBn photodetector,” Electron. Lett. 50(20), 1472–1473 (2014).
[Crossref]

IEEE J. Quantum Electron. (1)

A. A. Kosterev and F. K. Tittel, “Chemical sensors based on quantum cascade lasers,” IEEE J. Quantum Electron. 38(6), 582–591 (2002).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (3)

V. M. Lavchiev and B. Jakoby, “Photonics in the Mid-Infrared: Challenges in Single-Chip Integration and Absorption Sensing,” IEEE J. Sel. Top. Quantum Electron. 23(2), 452 (2017).
[Crossref]

A. Spott, E. J. Stanton, N. Volet, J. D. Peters, J. R. Meyer, and J. E. Bowers, “Heterogeneous Integration for Mid-Infrared Silicon Photonics,” IEEE J. Sel. Top. Quantum Electron. 23(6), 1–10 (2017).
[Crossref]

Z.-H. Zhu, F. E. Ejeckam, Y. Qian, J. Zhang, Z. Zhang, G. L. Christenson, and Y. Lo, “Wafer bonding technology and its applications in optoelectronic devices and materials,” IEEE J. Sel. Top. Quantum Electron. 3(3), 927–936 (1997).
[Crossref]

IEEE Photonics Technol. Lett. (1)

E. Michel, J. Xu, J. Kim, I. Ferguson, and M. Razeghi, “InSb infrared photodetectors on Si substrates grown by molecular beam epitaxy,” IEEE Photonics Technol. Lett. 8(5), 673–675 (1996).
[Crossref]

IEEE Trans. Electron Dev. (1)

V. Pusino, C. Xie, A. Khalid, M. J. Steer, M. Sorel, I. G. Thayne, and D. R. Cumming, “InSb Photodiodes for Monolithic Active Focal Plane Arrays on GaAs Substrates,” IEEE Trans. Electron Dev. 63(8), 3135–3142 (2016).
[Crossref]

Infrared Phys. (1)

Z. Djuric, B. Livada, V. Jovic, M. Smiljanic, M. Matic, and Z. Lazic, “Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect,” Infrared Phys. 29(1), 1–7 (1989).
[Crossref]

J. Appl. Phys. (4)

W. Hu, X. Chen, F. Yin, Z. Quan, Z. Ye, X. Hu, Z. Li, and W. Lu, “Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors,” J. Appl. Phys. 105(10), 104502 (2009).
[Crossref]

S. Fang, K. Adomi, S. Iyer, H. Morkoc, H. Zabel, C. Choi, and N. Otsuka, “Gallium arsenide and other compound semiconductors on silicon,” J. Appl. Phys. 68(7), R31–R58 (1990).
[Crossref]

S. Woo, S. Hosseini Vajargah, S. Ghanad-Tavakoli, R. Kleiman, and G. Botton, “Direct observation of anti-phase boundaries in heteroepitaxy of GaSb thin films grown on Si (001) by transmission electron microscopy,” J. Appl. Phys. 112(7), 074306 (2012).
[Crossref]

A. Rogalski, J. Antoszewski, and L. Faraone, “Third-generation infrared photodetector arrays,” J. Appl. Phys. 105(9), 091101 (2009).
[Crossref]

J. Electron. Mater. (1)

W. Tennant, ““Rule 07” revisited: Still a good heuristic predictor of p/n HgCdTe photodiode performance?” J. Electron. Mater. 39(7), 1030–1035 (2010).
[Crossref]

Jpn. J. Appl. Phys. (1)

K. Ueno, E. G. Camargo, T. Katsumata, H. Goto, N. Kuze, Y. Kangawa, and K. Kakimoto, “InSb mid-infrared photon detector for room-temperature operation,” Jpn. J. Appl. Phys. 52(9R), 092202 (2013).
[Crossref]

Mater. Lett. (1)

B. W. Jia, K. H. Tan, W. K. Loke, S. Wicaksono, and S. F. Yoon, “Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations,” Mater. Lett. 158, 258–261 (2015).
[Crossref]

Nat. Photonics (1)

R. Soref, “Mid-infrared photonics in silicon and germanium,” Nat. Photonics 4(8), 495–497 (2010).
[Crossref]

Phys. Rev. B (1)

M. De Giorgi, A. Taurino, A. Passaseo, M. Catalano, and R. Cingolani, “Interpretation of phase and strain contrast of TEM images of InxGa1-xAs/GaAs quantum dots,” Phys. Rev. B 63(24), 245302 (2001).
[Crossref]

Phys. Rev. B Condens. Matter (1)

G. E. Franklin, D. H. Rich, H. Hong, T. Miller, and T. Chiang, “Interface formation and growth of InSb on Si(100),” Phys. Rev. B Condens. Matter 45(7), 3426–3434 (1992).
[Crossref] [PubMed]

Phys. Rev. Lett. (1)

D. M. Hwang, S. A. Schwarz, T. S. Ravi, R. Bhat, and C. Y. Chen, “Strained-layer relaxation in fcc structures via the generation of partial dislocations,” Phys. Rev. Lett. 66(6), 739–742 (1991).
[Crossref] [PubMed]

Prog. Quantum Electron. (1)

A. Rogalski, “Infrared detectors: status and trends,” Prog. Quantum Electron. 27(2-3), 59–210 (2003).
[Crossref]

Solid-State Electron. (1)

A. Tevke, C. Besikci, C. Van Hoof, and G. Borghs, “InSb infrared p–i–n photodetectors grown on GaAs coated Si substrates by molecular beam epitaxy,” Solid-State Electron. 42(6), 1039–1044 (1998).
[Crossref]

Thin Solid Films (1)

M. Erkus, O. Senel, and U. Serincan, “Structural, optical and electrical characterization of InAs0.83Sb0.17 p-π-n photodetector grown on GaAs substrate,” Thin Solid Films 616, 141–144 (2016).
[Crossref]

Other (1)

A. Rogalski, K. Adamiec, and J. Rutkowski, Narrow-gap Semiconductor Photodiodes (SPIE Press, 2000).

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Figures (4)

Fig. 1
Fig. 1 (a) Schematic diagram of the InSb p-i-n photodetector with an In0.82Al0.18Sb barrier layer grown on a (100) 6° offcut Si substrate via a 250-nm-thick AlSb/GaSb buffer. (b) (004) XRD ω-2θ scan of the InSb photodetector grown on Si. (c) (115)XRD space map (RSM) of the InSb photodetector grown on Si.
Fig. 2
Fig. 2 (a) Bright-field TEM image of the GaSb/Si interface. (b) High resolution TEM (HR TEM) image of an IMF array at the GaSb/Si interface. (c) Bright-field TEM image of the InSb/AlSb interface. (d) HR-TEM image of the misfit dislocations obtained in the dashed box in (c). 60° misfit dislocations are indicated by one arrow and 90° misfit dislocations are indicated by a pair of arrows.
Fig. 3
Fig. 3 (a) Temperature dependent dark current density (Jdark)-voltage curves temperature for the detector with a mesa area of 0.0787 mm2. (b) Comparison of voltage dependent Jdark at 77 K between the InSb photodetector with and without the barrier layer. (c) The natural logarithm of ln(Jdark) vs. 1/kT for the device presented in (a) and the red lines are the Arrhenius fitting using Eq. (1) from 300 K to 77 K. (d) Perimeter-to-area (P/A) ratio dependent R0A for detectors with different sizes at 77 K. The solid lines are the fitting using Eq. (2). The inset is the optical image of the InSb photodetector.
Fig. 4
Fig. 4 (a) Temperature-dependent photocurrent density of the InSb detector on Si. The light source is a blackbody maintained at 900 °C and its output spectrum is shown in the inset of (a). (b) Spectral response of the InSb detector on Si. The left and right y-axis is the responsivity and detectivity, respectively.

Equations (3)

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J dark = J 0 exp( E a k B T )
1 R 0 A = 1 R 0 A bulk + 1 r surface P A
D * =  R p ( R 0 A 4 k B T ) 1/2

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