Abstract

We investigated the high absolute photoluminescence quantum yields (PL QYs) from tunable luminescent amorphous silicon oxynitride (a-SiNxOy) films. The PL QY of 8.38 percent has been achieved at PL peak energy of 2.55 eV in a-SiNxOy systems, which is higher than those of reported nanocrystal-Si embedded silicon nitride films. The existence of N-Si-O bonding states was confirmed by performing FTIR, XPS and EPR measurements. The PL QY is proportional to the concentration of Nx defects, indicating the dominant contribution of luminescent N-Si-O bonding states in radiative recombination processes. Particularly, we precisely monitored the ns-PL lifetimes evolution profile versus detected emission wavelengths, and further verified that the N-Si-O bonding states are responsible for highly efficient PL.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  21. P. Cova, S. Poulin, O. Grenier, and R. A. Masut, “A method for the analysis of multiphase bonding structures in amorphous SiOxNy films,” J. Appl. Phys. 97(7), 073518 (2005).
    [Crossref]
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    [Crossref]
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    [Crossref]
  24. F. H. P. M. Habraken and A. E. T. Kuiper, “Silicon nitride and oxynitride films,” Mater. Sci. Eng. Rep. 12(3), 123–175 (1994).
    [Crossref]
  25. Y. Cros and J. Krautwurm, “Structural identification of point defects in amorphous silicon oxynitrides,” J. Non-Cryst. Solids 187, 385–394 (1995).
    [Crossref]
  26. W. L. Warren, J. Kanicki, and E. H. Poindexter, “Paramagnetic point defects in silicon nitride and silicon oxynitride thin films on silicon,” Colloid Surf. A-Physicochem. Eng. Asp. 115, 311–317 (1996).
    [Crossref]
  27. K. H. Lin, S. C. Liou, W. L. Chen, C. L. Wu, G. R. Lin, and Y. M. Chang, “Tunable and stable UV-NIR photoluminescence from annealed SiOx with Si nanoparticles,” Opt. Express 21(20), 23416–23424 (2013).
    [Crossref] [PubMed]
  28. W. L. Wilson, P. F. Szajowski, and L. E. Brus, “Quantum confinement in size-selected, surface-oxidized silicon nanocrystals,” Science 262(5137), 1242–1244 (1993).
    [Crossref] [PubMed]
  29. A. M. Hartel, S. Gutsch, D. Hiller, and M. Zacharias, “Intrinsic nonradiative recombination in ensembles of silicon nanocrystals,” Phys. Rev. B Condens. Matter Mater. Phys. 87(3), 035428 (2013).
    [Crossref]
  30. G. B. De los Reyes, M. Dasog, M. Na, L. V. Titova, J. G. C. Veinot, and F. A. Hegmann, “Charge transfer state emission dynamics in blue-emitting functionalized silicon nanocrystals,” Phys. Chem. Chem. Phys. 17(44), 30125–30133 (2015).
    [Crossref] [PubMed]

2018 (2)

Y. X. Zhang, W. S. Wu, H. L. Hao, and W. Z. Shen, “Femtosecond laser-induced size reduction and emission quantum yield enhancement of colloidal silicon nanocrystals: effect of laser ablation time,” Nanotechnology 29(36), 365706 (2018).
[Crossref] [PubMed]

X. Liu, S. Zhao, W. Gu, Y. Zhang, X. Qiao, Z. Ni, X. Pi, and D. Yang, “Light-emitting diodes based on colloidal silicon quantum dots with octyl and phenylpropyl ligands,” ACS Appl. Mater. Interfaces 10(6), 5959–5966 (2018).
[Crossref] [PubMed]

2017 (1)

Z. W. Lin, K. J. Chen, P. Z. Zhang, J. Xu, W. Li, H. F. Yang, and X. F. Huang, “Improved power efficiency in phosphorus doped n-a-SiNxOy/p-Si heterojunction light emitting diode,” Appl. Phys. Lett. 110(8), 081109 (2017).
[Crossref]

2016 (2)

P. Zhang, K. Chen, Z. Lin, D. Tan, H. Dong, W. Li, J. Xu, and X. Huang, “Dynamics of high quantum efficiency photoluminescence from N-Si-O bonding states in oxygenated amorphous silicon nitride films,” Appl. Phys. Lett. 108(11), 111103 (2016).
[Crossref]

Q. Li, T. Y. Luo, M. Zhou, H. Abroshan, J. Huang, H. J. Kim, N. L. Rosi, Z. Shao, and R. Jin, “Silicon nanoparticles with surface nitrogen: 90% quantum yield with narrow luminescence bandwidth and the ligand structure based energy law,” ACS Nano 10(9), 8385–8393 (2016).
[Crossref] [PubMed]

2015 (2)

P. Z. Zhang, K. J. Chen, Z. W. Lin, H. P. Dong, W. Li, J. Xu, and X. F. Huang, “The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films,” Appl. Phys. Lett. 106(23), 231103 (2015).
[Crossref]

G. B. De los Reyes, M. Dasog, M. Na, L. V. Titova, J. G. C. Veinot, and F. A. Hegmann, “Charge transfer state emission dynamics in blue-emitting functionalized silicon nanocrystals,” Phys. Chem. Chem. Phys. 17(44), 30125–30133 (2015).
[Crossref] [PubMed]

2014 (1)

P. Z. Zhang, K. J. Chen, H. P. Dong, P. Zhang, Z. H. Fang, W. Li, J. Xu, and X. F. Huang, “Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm,” Appl. Phys. Lett. 105(1), 011113 (2014).
[Crossref]

2013 (3)

S. K. Jou, I. C. Liaw, Y. C. Cheng, and C. H. Li, “Light emission of silicon oxynitride films prepared by reactive sputtering of silicon,” J. Lumin. 134, 853–857 (2013).
[Crossref]

K. H. Lin, S. C. Liou, W. L. Chen, C. L. Wu, G. R. Lin, and Y. M. Chang, “Tunable and stable UV-NIR photoluminescence from annealed SiOx with Si nanoparticles,” Opt. Express 21(20), 23416–23424 (2013).
[Crossref] [PubMed]

A. M. Hartel, S. Gutsch, D. Hiller, and M. Zacharias, “Intrinsic nonradiative recombination in ensembles of silicon nanocrystals,” Phys. Rev. B Condens. Matter Mater. Phys. 87(3), 035428 (2013).
[Crossref]

2012 (3)

P. D. Nguyen, D. M. Kepaptsoglou, Q. M. Ramasse, M. F. Sunding, L. O. Vestland, T. G. Finstad, and A. Olsen, “Impact of oxygen bonding on the atomic structure and photoluminescence properties of Si-rich silicon nitride thin films,” J. Appl. Phys. 112(7), 073514 (2012).
[Crossref]

R. Ruggeri, F. Neri, A. Sciuto, V. Privitera, C. Spinella, and G. Mannino, “Luminescence properties of SiOxNy irradiated by IR laser 808nm: the role of Si quantum dots and Si chemical environment,” Appl. Phys. Lett. 100(4), 042104 (2012).
[Crossref]

M. L. Mastronardi, F. Maier-Flaig, D. Faulkner, E. J. Henderson, C. Kübel, U. Lemmer, and G. A. Ozin, “Size-dependent absolute quantum yields for size-separated colloidally-stable silicon nanocrystals,” Nano Lett. 12(1), 337–342 (2012).
[Crossref] [PubMed]

2011 (1)

K. Y. Cheng, R. Anthony, U. R. Kortshagen, and R. J. Holmes, “High-efficiency silicon nanocrystal light-emitting devices,” Nano Lett. 11(5), 1952–1956 (2011).
[Crossref] [PubMed]

2006 (3)

L. Dal Negro, J. H. Yi, J. Michel, L. C. Kimerling, T.-W. F. Chang, V. Sukhovatkin, and E. H. Sargent, “Light emission efficiency and dynamics in silicon-rich silicon nitride Films,” Appl. Phys. Lett. 88(23), 233109 (2006).
[Crossref]

R. J. Walters, J. Kalkman, A. Polman, H. A. Atwater, and M. J. A. de Dood, “Photoluminescence quantum efficiency of dense silicon nanocrystal ensembles in SiO2,” Phys. Rev. B Condens. Matter Mater. Phys. 73(13), 132302 (2006).
[Crossref]

D. Jurbergs, E. Rogojina, L. Mangolini, and U. Kortshagen, “Silicon nanocrystals with ensemble quantum yields exceeding 60%,” Appl. Phys. Lett. 88(23), 233116 (2006).
[Crossref]

2005 (2)

S. Naskar, S. D. Wolter, C. A. Bower, B. R. Stoner, and J. T. Glass, “Verification of the O–Si–N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films,” Appl. Phys. Lett. 87(26), 261907 (2005).
[Crossref]

P. Cova, S. Poulin, O. Grenier, and R. A. Masut, “A method for the analysis of multiphase bonding structures in amorphous SiOxNy films,” J. Appl. Phys. 97(7), 073518 (2005).
[Crossref]

2001 (1)

H. Kato, A. Masuzawa, T. Noma, K. S. Seol, and Y. Ohki, “Thermally induced photoluminescence quenching centre in hydrogenated amorphous silicon oxynitride,” J. Phys. Condens. Matter 13(30), 6541–6549 (2001).
[Crossref]

1996 (2)

L. Pavesi, “Influence of dispersive exciton motion on the recombination dynamics in porous silicon,” J. Appl. Phys. 80(1), 216–225 (1996).
[Crossref]

W. L. Warren, J. Kanicki, and E. H. Poindexter, “Paramagnetic point defects in silicon nitride and silicon oxynitride thin films on silicon,” Colloid Surf. A-Physicochem. Eng. Asp. 115, 311–317 (1996).
[Crossref]

1995 (2)

Y. Cros and J. Krautwurm, “Structural identification of point defects in amorphous silicon oxynitrides,” J. Non-Cryst. Solids 187, 385–394 (1995).
[Crossref]

S. Garcia, D. Bravo, M. Fernandez, I. Martil, and F. J. López, “Role of oxygen on the dangling bond configuration of low oxygen content SiNx:H films deposited at room temperature,” Appl. Phys. Lett. 67(22), 3263–3265 (1995).
[Crossref]

1994 (2)

F. H. P. M. Habraken and A. E. T. Kuiper, “Silicon nitride and oxynitride films,” Mater. Sci. Eng. Rep. 12(3), 123–175 (1994).
[Crossref]

W. S. Liao, C. H. Lin, and S. C. Lee, “Oxidation of silicon nitride prepared by plasma-enhanced chemical vapor deposition at low temperature,” Appl. Phys. Lett. 65(17), 2229–2231 (1994).
[Crossref]

1993 (1)

W. L. Wilson, P. F. Szajowski, and L. E. Brus, “Quantum confinement in size-selected, surface-oxidized silicon nanocrystals,” Science 262(5137), 1242–1244 (1993).
[Crossref] [PubMed]

1992 (1)

K. J. Chen, X. F. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett. 61(17), 2069–2071 (1992).
[Crossref]

Abroshan, H.

Q. Li, T. Y. Luo, M. Zhou, H. Abroshan, J. Huang, H. J. Kim, N. L. Rosi, Z. Shao, and R. Jin, “Silicon nanoparticles with surface nitrogen: 90% quantum yield with narrow luminescence bandwidth and the ligand structure based energy law,” ACS Nano 10(9), 8385–8393 (2016).
[Crossref] [PubMed]

Anthony, R.

K. Y. Cheng, R. Anthony, U. R. Kortshagen, and R. J. Holmes, “High-efficiency silicon nanocrystal light-emitting devices,” Nano Lett. 11(5), 1952–1956 (2011).
[Crossref] [PubMed]

Atwater, H. A.

R. J. Walters, J. Kalkman, A. Polman, H. A. Atwater, and M. J. A. de Dood, “Photoluminescence quantum efficiency of dense silicon nanocrystal ensembles in SiO2,” Phys. Rev. B Condens. Matter Mater. Phys. 73(13), 132302 (2006).
[Crossref]

Bower, C. A.

S. Naskar, S. D. Wolter, C. A. Bower, B. R. Stoner, and J. T. Glass, “Verification of the O–Si–N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films,” Appl. Phys. Lett. 87(26), 261907 (2005).
[Crossref]

Bravo, D.

S. Garcia, D. Bravo, M. Fernandez, I. Martil, and F. J. López, “Role of oxygen on the dangling bond configuration of low oxygen content SiNx:H films deposited at room temperature,” Appl. Phys. Lett. 67(22), 3263–3265 (1995).
[Crossref]

Brus, L. E.

W. L. Wilson, P. F. Szajowski, and L. E. Brus, “Quantum confinement in size-selected, surface-oxidized silicon nanocrystals,” Science 262(5137), 1242–1244 (1993).
[Crossref] [PubMed]

Chang, T.-W. F.

L. Dal Negro, J. H. Yi, J. Michel, L. C. Kimerling, T.-W. F. Chang, V. Sukhovatkin, and E. H. Sargent, “Light emission efficiency and dynamics in silicon-rich silicon nitride Films,” Appl. Phys. Lett. 88(23), 233109 (2006).
[Crossref]

Chang, Y. M.

Chen, K.

P. Zhang, K. Chen, Z. Lin, D. Tan, H. Dong, W. Li, J. Xu, and X. Huang, “Dynamics of high quantum efficiency photoluminescence from N-Si-O bonding states in oxygenated amorphous silicon nitride films,” Appl. Phys. Lett. 108(11), 111103 (2016).
[Crossref]

Chen, K. J.

Z. W. Lin, K. J. Chen, P. Z. Zhang, J. Xu, W. Li, H. F. Yang, and X. F. Huang, “Improved power efficiency in phosphorus doped n-a-SiNxOy/p-Si heterojunction light emitting diode,” Appl. Phys. Lett. 110(8), 081109 (2017).
[Crossref]

P. Z. Zhang, K. J. Chen, Z. W. Lin, H. P. Dong, W. Li, J. Xu, and X. F. Huang, “The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films,” Appl. Phys. Lett. 106(23), 231103 (2015).
[Crossref]

P. Z. Zhang, K. J. Chen, H. P. Dong, P. Zhang, Z. H. Fang, W. Li, J. Xu, and X. F. Huang, “Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm,” Appl. Phys. Lett. 105(1), 011113 (2014).
[Crossref]

K. J. Chen, X. F. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett. 61(17), 2069–2071 (1992).
[Crossref]

Chen, W. L.

Cheng, K. Y.

K. Y. Cheng, R. Anthony, U. R. Kortshagen, and R. J. Holmes, “High-efficiency silicon nanocrystal light-emitting devices,” Nano Lett. 11(5), 1952–1956 (2011).
[Crossref] [PubMed]

Cheng, Y. C.

S. K. Jou, I. C. Liaw, Y. C. Cheng, and C. H. Li, “Light emission of silicon oxynitride films prepared by reactive sputtering of silicon,” J. Lumin. 134, 853–857 (2013).
[Crossref]

Cova, P.

P. Cova, S. Poulin, O. Grenier, and R. A. Masut, “A method for the analysis of multiphase bonding structures in amorphous SiOxNy films,” J. Appl. Phys. 97(7), 073518 (2005).
[Crossref]

Cros, Y.

Y. Cros and J. Krautwurm, “Structural identification of point defects in amorphous silicon oxynitrides,” J. Non-Cryst. Solids 187, 385–394 (1995).
[Crossref]

Dal Negro, L.

L. Dal Negro, J. H. Yi, J. Michel, L. C. Kimerling, T.-W. F. Chang, V. Sukhovatkin, and E. H. Sargent, “Light emission efficiency and dynamics in silicon-rich silicon nitride Films,” Appl. Phys. Lett. 88(23), 233109 (2006).
[Crossref]

Dasog, M.

G. B. De los Reyes, M. Dasog, M. Na, L. V. Titova, J. G. C. Veinot, and F. A. Hegmann, “Charge transfer state emission dynamics in blue-emitting functionalized silicon nanocrystals,” Phys. Chem. Chem. Phys. 17(44), 30125–30133 (2015).
[Crossref] [PubMed]

de Dood, M. J. A.

R. J. Walters, J. Kalkman, A. Polman, H. A. Atwater, and M. J. A. de Dood, “Photoluminescence quantum efficiency of dense silicon nanocrystal ensembles in SiO2,” Phys. Rev. B Condens. Matter Mater. Phys. 73(13), 132302 (2006).
[Crossref]

De los Reyes, G. B.

G. B. De los Reyes, M. Dasog, M. Na, L. V. Titova, J. G. C. Veinot, and F. A. Hegmann, “Charge transfer state emission dynamics in blue-emitting functionalized silicon nanocrystals,” Phys. Chem. Chem. Phys. 17(44), 30125–30133 (2015).
[Crossref] [PubMed]

Dong, H.

P. Zhang, K. Chen, Z. Lin, D. Tan, H. Dong, W. Li, J. Xu, and X. Huang, “Dynamics of high quantum efficiency photoluminescence from N-Si-O bonding states in oxygenated amorphous silicon nitride films,” Appl. Phys. Lett. 108(11), 111103 (2016).
[Crossref]

Dong, H. P.

P. Z. Zhang, K. J. Chen, Z. W. Lin, H. P. Dong, W. Li, J. Xu, and X. F. Huang, “The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films,” Appl. Phys. Lett. 106(23), 231103 (2015).
[Crossref]

P. Z. Zhang, K. J. Chen, H. P. Dong, P. Zhang, Z. H. Fang, W. Li, J. Xu, and X. F. Huang, “Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm,” Appl. Phys. Lett. 105(1), 011113 (2014).
[Crossref]

Fang, Z. H.

P. Z. Zhang, K. J. Chen, H. P. Dong, P. Zhang, Z. H. Fang, W. Li, J. Xu, and X. F. Huang, “Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm,” Appl. Phys. Lett. 105(1), 011113 (2014).
[Crossref]

Faulkner, D.

M. L. Mastronardi, F. Maier-Flaig, D. Faulkner, E. J. Henderson, C. Kübel, U. Lemmer, and G. A. Ozin, “Size-dependent absolute quantum yields for size-separated colloidally-stable silicon nanocrystals,” Nano Lett. 12(1), 337–342 (2012).
[Crossref] [PubMed]

Feng, D.

K. J. Chen, X. F. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett. 61(17), 2069–2071 (1992).
[Crossref]

Fernandez, M.

S. Garcia, D. Bravo, M. Fernandez, I. Martil, and F. J. López, “Role of oxygen on the dangling bond configuration of low oxygen content SiNx:H films deposited at room temperature,” Appl. Phys. Lett. 67(22), 3263–3265 (1995).
[Crossref]

Finstad, T. G.

P. D. Nguyen, D. M. Kepaptsoglou, Q. M. Ramasse, M. F. Sunding, L. O. Vestland, T. G. Finstad, and A. Olsen, “Impact of oxygen bonding on the atomic structure and photoluminescence properties of Si-rich silicon nitride thin films,” J. Appl. Phys. 112(7), 073514 (2012).
[Crossref]

Garcia, S.

S. Garcia, D. Bravo, M. Fernandez, I. Martil, and F. J. López, “Role of oxygen on the dangling bond configuration of low oxygen content SiNx:H films deposited at room temperature,” Appl. Phys. Lett. 67(22), 3263–3265 (1995).
[Crossref]

Glass, J. T.

S. Naskar, S. D. Wolter, C. A. Bower, B. R. Stoner, and J. T. Glass, “Verification of the O–Si–N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films,” Appl. Phys. Lett. 87(26), 261907 (2005).
[Crossref]

Grenier, O.

P. Cova, S. Poulin, O. Grenier, and R. A. Masut, “A method for the analysis of multiphase bonding structures in amorphous SiOxNy films,” J. Appl. Phys. 97(7), 073518 (2005).
[Crossref]

Gu, W.

X. Liu, S. Zhao, W. Gu, Y. Zhang, X. Qiao, Z. Ni, X. Pi, and D. Yang, “Light-emitting diodes based on colloidal silicon quantum dots with octyl and phenylpropyl ligands,” ACS Appl. Mater. Interfaces 10(6), 5959–5966 (2018).
[Crossref] [PubMed]

Gutsch, S.

A. M. Hartel, S. Gutsch, D. Hiller, and M. Zacharias, “Intrinsic nonradiative recombination in ensembles of silicon nanocrystals,” Phys. Rev. B Condens. Matter Mater. Phys. 87(3), 035428 (2013).
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Habraken, F. H. P. M.

F. H. P. M. Habraken and A. E. T. Kuiper, “Silicon nitride and oxynitride films,” Mater. Sci. Eng. Rep. 12(3), 123–175 (1994).
[Crossref]

Hao, H. L.

Y. X. Zhang, W. S. Wu, H. L. Hao, and W. Z. Shen, “Femtosecond laser-induced size reduction and emission quantum yield enhancement of colloidal silicon nanocrystals: effect of laser ablation time,” Nanotechnology 29(36), 365706 (2018).
[Crossref] [PubMed]

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A. M. Hartel, S. Gutsch, D. Hiller, and M. Zacharias, “Intrinsic nonradiative recombination in ensembles of silicon nanocrystals,” Phys. Rev. B Condens. Matter Mater. Phys. 87(3), 035428 (2013).
[Crossref]

Hegmann, F. A.

G. B. De los Reyes, M. Dasog, M. Na, L. V. Titova, J. G. C. Veinot, and F. A. Hegmann, “Charge transfer state emission dynamics in blue-emitting functionalized silicon nanocrystals,” Phys. Chem. Chem. Phys. 17(44), 30125–30133 (2015).
[Crossref] [PubMed]

Henderson, E. J.

M. L. Mastronardi, F. Maier-Flaig, D. Faulkner, E. J. Henderson, C. Kübel, U. Lemmer, and G. A. Ozin, “Size-dependent absolute quantum yields for size-separated colloidally-stable silicon nanocrystals,” Nano Lett. 12(1), 337–342 (2012).
[Crossref] [PubMed]

Hiller, D.

A. M. Hartel, S. Gutsch, D. Hiller, and M. Zacharias, “Intrinsic nonradiative recombination in ensembles of silicon nanocrystals,” Phys. Rev. B Condens. Matter Mater. Phys. 87(3), 035428 (2013).
[Crossref]

Holmes, R. J.

K. Y. Cheng, R. Anthony, U. R. Kortshagen, and R. J. Holmes, “High-efficiency silicon nanocrystal light-emitting devices,” Nano Lett. 11(5), 1952–1956 (2011).
[Crossref] [PubMed]

Huang, J.

Q. Li, T. Y. Luo, M. Zhou, H. Abroshan, J. Huang, H. J. Kim, N. L. Rosi, Z. Shao, and R. Jin, “Silicon nanoparticles with surface nitrogen: 90% quantum yield with narrow luminescence bandwidth and the ligand structure based energy law,” ACS Nano 10(9), 8385–8393 (2016).
[Crossref] [PubMed]

Huang, X.

P. Zhang, K. Chen, Z. Lin, D. Tan, H. Dong, W. Li, J. Xu, and X. Huang, “Dynamics of high quantum efficiency photoluminescence from N-Si-O bonding states in oxygenated amorphous silicon nitride films,” Appl. Phys. Lett. 108(11), 111103 (2016).
[Crossref]

Huang, X. F.

Z. W. Lin, K. J. Chen, P. Z. Zhang, J. Xu, W. Li, H. F. Yang, and X. F. Huang, “Improved power efficiency in phosphorus doped n-a-SiNxOy/p-Si heterojunction light emitting diode,” Appl. Phys. Lett. 110(8), 081109 (2017).
[Crossref]

P. Z. Zhang, K. J. Chen, Z. W. Lin, H. P. Dong, W. Li, J. Xu, and X. F. Huang, “The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films,” Appl. Phys. Lett. 106(23), 231103 (2015).
[Crossref]

P. Z. Zhang, K. J. Chen, H. P. Dong, P. Zhang, Z. H. Fang, W. Li, J. Xu, and X. F. Huang, “Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm,” Appl. Phys. Lett. 105(1), 011113 (2014).
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K. J. Chen, X. F. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett. 61(17), 2069–2071 (1992).
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Q. Li, T. Y. Luo, M. Zhou, H. Abroshan, J. Huang, H. J. Kim, N. L. Rosi, Z. Shao, and R. Jin, “Silicon nanoparticles with surface nitrogen: 90% quantum yield with narrow luminescence bandwidth and the ligand structure based energy law,” ACS Nano 10(9), 8385–8393 (2016).
[Crossref] [PubMed]

Jou, S. K.

S. K. Jou, I. C. Liaw, Y. C. Cheng, and C. H. Li, “Light emission of silicon oxynitride films prepared by reactive sputtering of silicon,” J. Lumin. 134, 853–857 (2013).
[Crossref]

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D. Jurbergs, E. Rogojina, L. Mangolini, and U. Kortshagen, “Silicon nanocrystals with ensemble quantum yields exceeding 60%,” Appl. Phys. Lett. 88(23), 233116 (2006).
[Crossref]

Kalkman, J.

R. J. Walters, J. Kalkman, A. Polman, H. A. Atwater, and M. J. A. de Dood, “Photoluminescence quantum efficiency of dense silicon nanocrystal ensembles in SiO2,” Phys. Rev. B Condens. Matter Mater. Phys. 73(13), 132302 (2006).
[Crossref]

Kanicki, J.

W. L. Warren, J. Kanicki, and E. H. Poindexter, “Paramagnetic point defects in silicon nitride and silicon oxynitride thin films on silicon,” Colloid Surf. A-Physicochem. Eng. Asp. 115, 311–317 (1996).
[Crossref]

Kato, H.

H. Kato, A. Masuzawa, T. Noma, K. S. Seol, and Y. Ohki, “Thermally induced photoluminescence quenching centre in hydrogenated amorphous silicon oxynitride,” J. Phys. Condens. Matter 13(30), 6541–6549 (2001).
[Crossref]

Kepaptsoglou, D. M.

P. D. Nguyen, D. M. Kepaptsoglou, Q. M. Ramasse, M. F. Sunding, L. O. Vestland, T. G. Finstad, and A. Olsen, “Impact of oxygen bonding on the atomic structure and photoluminescence properties of Si-rich silicon nitride thin films,” J. Appl. Phys. 112(7), 073514 (2012).
[Crossref]

Kim, H. J.

Q. Li, T. Y. Luo, M. Zhou, H. Abroshan, J. Huang, H. J. Kim, N. L. Rosi, Z. Shao, and R. Jin, “Silicon nanoparticles with surface nitrogen: 90% quantum yield with narrow luminescence bandwidth and the ligand structure based energy law,” ACS Nano 10(9), 8385–8393 (2016).
[Crossref] [PubMed]

Kimerling, L. C.

L. Dal Negro, J. H. Yi, J. Michel, L. C. Kimerling, T.-W. F. Chang, V. Sukhovatkin, and E. H. Sargent, “Light emission efficiency and dynamics in silicon-rich silicon nitride Films,” Appl. Phys. Lett. 88(23), 233109 (2006).
[Crossref]

Kortshagen, U.

D. Jurbergs, E. Rogojina, L. Mangolini, and U. Kortshagen, “Silicon nanocrystals with ensemble quantum yields exceeding 60%,” Appl. Phys. Lett. 88(23), 233116 (2006).
[Crossref]

Kortshagen, U. R.

K. Y. Cheng, R. Anthony, U. R. Kortshagen, and R. J. Holmes, “High-efficiency silicon nanocrystal light-emitting devices,” Nano Lett. 11(5), 1952–1956 (2011).
[Crossref] [PubMed]

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Y. Cros and J. Krautwurm, “Structural identification of point defects in amorphous silicon oxynitrides,” J. Non-Cryst. Solids 187, 385–394 (1995).
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M. L. Mastronardi, F. Maier-Flaig, D. Faulkner, E. J. Henderson, C. Kübel, U. Lemmer, and G. A. Ozin, “Size-dependent absolute quantum yields for size-separated colloidally-stable silicon nanocrystals,” Nano Lett. 12(1), 337–342 (2012).
[Crossref] [PubMed]

Kuiper, A. E. T.

F. H. P. M. Habraken and A. E. T. Kuiper, “Silicon nitride and oxynitride films,” Mater. Sci. Eng. Rep. 12(3), 123–175 (1994).
[Crossref]

Lee, S. C.

W. S. Liao, C. H. Lin, and S. C. Lee, “Oxidation of silicon nitride prepared by plasma-enhanced chemical vapor deposition at low temperature,” Appl. Phys. Lett. 65(17), 2229–2231 (1994).
[Crossref]

Lemmer, U.

M. L. Mastronardi, F. Maier-Flaig, D. Faulkner, E. J. Henderson, C. Kübel, U. Lemmer, and G. A. Ozin, “Size-dependent absolute quantum yields for size-separated colloidally-stable silicon nanocrystals,” Nano Lett. 12(1), 337–342 (2012).
[Crossref] [PubMed]

Li, C. H.

S. K. Jou, I. C. Liaw, Y. C. Cheng, and C. H. Li, “Light emission of silicon oxynitride films prepared by reactive sputtering of silicon,” J. Lumin. 134, 853–857 (2013).
[Crossref]

Li, Q.

Q. Li, T. Y. Luo, M. Zhou, H. Abroshan, J. Huang, H. J. Kim, N. L. Rosi, Z. Shao, and R. Jin, “Silicon nanoparticles with surface nitrogen: 90% quantum yield with narrow luminescence bandwidth and the ligand structure based energy law,” ACS Nano 10(9), 8385–8393 (2016).
[Crossref] [PubMed]

Li, W.

Z. W. Lin, K. J. Chen, P. Z. Zhang, J. Xu, W. Li, H. F. Yang, and X. F. Huang, “Improved power efficiency in phosphorus doped n-a-SiNxOy/p-Si heterojunction light emitting diode,” Appl. Phys. Lett. 110(8), 081109 (2017).
[Crossref]

P. Zhang, K. Chen, Z. Lin, D. Tan, H. Dong, W. Li, J. Xu, and X. Huang, “Dynamics of high quantum efficiency photoluminescence from N-Si-O bonding states in oxygenated amorphous silicon nitride films,” Appl. Phys. Lett. 108(11), 111103 (2016).
[Crossref]

P. Z. Zhang, K. J. Chen, Z. W. Lin, H. P. Dong, W. Li, J. Xu, and X. F. Huang, “The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films,” Appl. Phys. Lett. 106(23), 231103 (2015).
[Crossref]

P. Z. Zhang, K. J. Chen, H. P. Dong, P. Zhang, Z. H. Fang, W. Li, J. Xu, and X. F. Huang, “Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm,” Appl. Phys. Lett. 105(1), 011113 (2014).
[Crossref]

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W. S. Liao, C. H. Lin, and S. C. Lee, “Oxidation of silicon nitride prepared by plasma-enhanced chemical vapor deposition at low temperature,” Appl. Phys. Lett. 65(17), 2229–2231 (1994).
[Crossref]

Liaw, I. C.

S. K. Jou, I. C. Liaw, Y. C. Cheng, and C. H. Li, “Light emission of silicon oxynitride films prepared by reactive sputtering of silicon,” J. Lumin. 134, 853–857 (2013).
[Crossref]

Lin, C. H.

W. S. Liao, C. H. Lin, and S. C. Lee, “Oxidation of silicon nitride prepared by plasma-enhanced chemical vapor deposition at low temperature,” Appl. Phys. Lett. 65(17), 2229–2231 (1994).
[Crossref]

Lin, G. R.

Lin, K. H.

Lin, Z.

P. Zhang, K. Chen, Z. Lin, D. Tan, H. Dong, W. Li, J. Xu, and X. Huang, “Dynamics of high quantum efficiency photoluminescence from N-Si-O bonding states in oxygenated amorphous silicon nitride films,” Appl. Phys. Lett. 108(11), 111103 (2016).
[Crossref]

Lin, Z. W.

Z. W. Lin, K. J. Chen, P. Z. Zhang, J. Xu, W. Li, H. F. Yang, and X. F. Huang, “Improved power efficiency in phosphorus doped n-a-SiNxOy/p-Si heterojunction light emitting diode,” Appl. Phys. Lett. 110(8), 081109 (2017).
[Crossref]

P. Z. Zhang, K. J. Chen, Z. W. Lin, H. P. Dong, W. Li, J. Xu, and X. F. Huang, “The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films,” Appl. Phys. Lett. 106(23), 231103 (2015).
[Crossref]

Liou, S. C.

Liu, X.

X. Liu, S. Zhao, W. Gu, Y. Zhang, X. Qiao, Z. Ni, X. Pi, and D. Yang, “Light-emitting diodes based on colloidal silicon quantum dots with octyl and phenylpropyl ligands,” ACS Appl. Mater. Interfaces 10(6), 5959–5966 (2018).
[Crossref] [PubMed]

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S. Garcia, D. Bravo, M. Fernandez, I. Martil, and F. J. López, “Role of oxygen on the dangling bond configuration of low oxygen content SiNx:H films deposited at room temperature,” Appl. Phys. Lett. 67(22), 3263–3265 (1995).
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Q. Li, T. Y. Luo, M. Zhou, H. Abroshan, J. Huang, H. J. Kim, N. L. Rosi, Z. Shao, and R. Jin, “Silicon nanoparticles with surface nitrogen: 90% quantum yield with narrow luminescence bandwidth and the ligand structure based energy law,” ACS Nano 10(9), 8385–8393 (2016).
[Crossref] [PubMed]

Maier-Flaig, F.

M. L. Mastronardi, F. Maier-Flaig, D. Faulkner, E. J. Henderson, C. Kübel, U. Lemmer, and G. A. Ozin, “Size-dependent absolute quantum yields for size-separated colloidally-stable silicon nanocrystals,” Nano Lett. 12(1), 337–342 (2012).
[Crossref] [PubMed]

Mangolini, L.

D. Jurbergs, E. Rogojina, L. Mangolini, and U. Kortshagen, “Silicon nanocrystals with ensemble quantum yields exceeding 60%,” Appl. Phys. Lett. 88(23), 233116 (2006).
[Crossref]

Mannino, G.

R. Ruggeri, F. Neri, A. Sciuto, V. Privitera, C. Spinella, and G. Mannino, “Luminescence properties of SiOxNy irradiated by IR laser 808nm: the role of Si quantum dots and Si chemical environment,” Appl. Phys. Lett. 100(4), 042104 (2012).
[Crossref]

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S. Garcia, D. Bravo, M. Fernandez, I. Martil, and F. J. López, “Role of oxygen on the dangling bond configuration of low oxygen content SiNx:H films deposited at room temperature,” Appl. Phys. Lett. 67(22), 3263–3265 (1995).
[Crossref]

Mastronardi, M. L.

M. L. Mastronardi, F. Maier-Flaig, D. Faulkner, E. J. Henderson, C. Kübel, U. Lemmer, and G. A. Ozin, “Size-dependent absolute quantum yields for size-separated colloidally-stable silicon nanocrystals,” Nano Lett. 12(1), 337–342 (2012).
[Crossref] [PubMed]

Masut, R. A.

P. Cova, S. Poulin, O. Grenier, and R. A. Masut, “A method for the analysis of multiphase bonding structures in amorphous SiOxNy films,” J. Appl. Phys. 97(7), 073518 (2005).
[Crossref]

Masuzawa, A.

H. Kato, A. Masuzawa, T. Noma, K. S. Seol, and Y. Ohki, “Thermally induced photoluminescence quenching centre in hydrogenated amorphous silicon oxynitride,” J. Phys. Condens. Matter 13(30), 6541–6549 (2001).
[Crossref]

Michel, J.

L. Dal Negro, J. H. Yi, J. Michel, L. C. Kimerling, T.-W. F. Chang, V. Sukhovatkin, and E. H. Sargent, “Light emission efficiency and dynamics in silicon-rich silicon nitride Films,” Appl. Phys. Lett. 88(23), 233109 (2006).
[Crossref]

Na, M.

G. B. De los Reyes, M. Dasog, M. Na, L. V. Titova, J. G. C. Veinot, and F. A. Hegmann, “Charge transfer state emission dynamics in blue-emitting functionalized silicon nanocrystals,” Phys. Chem. Chem. Phys. 17(44), 30125–30133 (2015).
[Crossref] [PubMed]

Naskar, S.

S. Naskar, S. D. Wolter, C. A. Bower, B. R. Stoner, and J. T. Glass, “Verification of the O–Si–N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films,” Appl. Phys. Lett. 87(26), 261907 (2005).
[Crossref]

Neri, F.

R. Ruggeri, F. Neri, A. Sciuto, V. Privitera, C. Spinella, and G. Mannino, “Luminescence properties of SiOxNy irradiated by IR laser 808nm: the role of Si quantum dots and Si chemical environment,” Appl. Phys. Lett. 100(4), 042104 (2012).
[Crossref]

Nguyen, P. D.

P. D. Nguyen, D. M. Kepaptsoglou, Q. M. Ramasse, M. F. Sunding, L. O. Vestland, T. G. Finstad, and A. Olsen, “Impact of oxygen bonding on the atomic structure and photoluminescence properties of Si-rich silicon nitride thin films,” J. Appl. Phys. 112(7), 073514 (2012).
[Crossref]

Ni, Z.

X. Liu, S. Zhao, W. Gu, Y. Zhang, X. Qiao, Z. Ni, X. Pi, and D. Yang, “Light-emitting diodes based on colloidal silicon quantum dots with octyl and phenylpropyl ligands,” ACS Appl. Mater. Interfaces 10(6), 5959–5966 (2018).
[Crossref] [PubMed]

Noma, T.

H. Kato, A. Masuzawa, T. Noma, K. S. Seol, and Y. Ohki, “Thermally induced photoluminescence quenching centre in hydrogenated amorphous silicon oxynitride,” J. Phys. Condens. Matter 13(30), 6541–6549 (2001).
[Crossref]

Ohki, Y.

H. Kato, A. Masuzawa, T. Noma, K. S. Seol, and Y. Ohki, “Thermally induced photoluminescence quenching centre in hydrogenated amorphous silicon oxynitride,” J. Phys. Condens. Matter 13(30), 6541–6549 (2001).
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Olsen, A.

P. D. Nguyen, D. M. Kepaptsoglou, Q. M. Ramasse, M. F. Sunding, L. O. Vestland, T. G. Finstad, and A. Olsen, “Impact of oxygen bonding on the atomic structure and photoluminescence properties of Si-rich silicon nitride thin films,” J. Appl. Phys. 112(7), 073514 (2012).
[Crossref]

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M. L. Mastronardi, F. Maier-Flaig, D. Faulkner, E. J. Henderson, C. Kübel, U. Lemmer, and G. A. Ozin, “Size-dependent absolute quantum yields for size-separated colloidally-stable silicon nanocrystals,” Nano Lett. 12(1), 337–342 (2012).
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L. Pavesi, “Influence of dispersive exciton motion on the recombination dynamics in porous silicon,” J. Appl. Phys. 80(1), 216–225 (1996).
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X. Liu, S. Zhao, W. Gu, Y. Zhang, X. Qiao, Z. Ni, X. Pi, and D. Yang, “Light-emitting diodes based on colloidal silicon quantum dots with octyl and phenylpropyl ligands,” ACS Appl. Mater. Interfaces 10(6), 5959–5966 (2018).
[Crossref] [PubMed]

Poindexter, E. H.

W. L. Warren, J. Kanicki, and E. H. Poindexter, “Paramagnetic point defects in silicon nitride and silicon oxynitride thin films on silicon,” Colloid Surf. A-Physicochem. Eng. Asp. 115, 311–317 (1996).
[Crossref]

Polman, A.

R. J. Walters, J. Kalkman, A. Polman, H. A. Atwater, and M. J. A. de Dood, “Photoluminescence quantum efficiency of dense silicon nanocrystal ensembles in SiO2,” Phys. Rev. B Condens. Matter Mater. Phys. 73(13), 132302 (2006).
[Crossref]

Poulin, S.

P. Cova, S. Poulin, O. Grenier, and R. A. Masut, “A method for the analysis of multiphase bonding structures in amorphous SiOxNy films,” J. Appl. Phys. 97(7), 073518 (2005).
[Crossref]

Privitera, V.

R. Ruggeri, F. Neri, A. Sciuto, V. Privitera, C. Spinella, and G. Mannino, “Luminescence properties of SiOxNy irradiated by IR laser 808nm: the role of Si quantum dots and Si chemical environment,” Appl. Phys. Lett. 100(4), 042104 (2012).
[Crossref]

Qiao, X.

X. Liu, S. Zhao, W. Gu, Y. Zhang, X. Qiao, Z. Ni, X. Pi, and D. Yang, “Light-emitting diodes based on colloidal silicon quantum dots with octyl and phenylpropyl ligands,” ACS Appl. Mater. Interfaces 10(6), 5959–5966 (2018).
[Crossref] [PubMed]

Ramasse, Q. M.

P. D. Nguyen, D. M. Kepaptsoglou, Q. M. Ramasse, M. F. Sunding, L. O. Vestland, T. G. Finstad, and A. Olsen, “Impact of oxygen bonding on the atomic structure and photoluminescence properties of Si-rich silicon nitride thin films,” J. Appl. Phys. 112(7), 073514 (2012).
[Crossref]

Rogojina, E.

D. Jurbergs, E. Rogojina, L. Mangolini, and U. Kortshagen, “Silicon nanocrystals with ensemble quantum yields exceeding 60%,” Appl. Phys. Lett. 88(23), 233116 (2006).
[Crossref]

Rosi, N. L.

Q. Li, T. Y. Luo, M. Zhou, H. Abroshan, J. Huang, H. J. Kim, N. L. Rosi, Z. Shao, and R. Jin, “Silicon nanoparticles with surface nitrogen: 90% quantum yield with narrow luminescence bandwidth and the ligand structure based energy law,” ACS Nano 10(9), 8385–8393 (2016).
[Crossref] [PubMed]

Ruggeri, R.

R. Ruggeri, F. Neri, A. Sciuto, V. Privitera, C. Spinella, and G. Mannino, “Luminescence properties of SiOxNy irradiated by IR laser 808nm: the role of Si quantum dots and Si chemical environment,” Appl. Phys. Lett. 100(4), 042104 (2012).
[Crossref]

Sargent, E. H.

L. Dal Negro, J. H. Yi, J. Michel, L. C. Kimerling, T.-W. F. Chang, V. Sukhovatkin, and E. H. Sargent, “Light emission efficiency and dynamics in silicon-rich silicon nitride Films,” Appl. Phys. Lett. 88(23), 233109 (2006).
[Crossref]

Sciuto, A.

R. Ruggeri, F. Neri, A. Sciuto, V. Privitera, C. Spinella, and G. Mannino, “Luminescence properties of SiOxNy irradiated by IR laser 808nm: the role of Si quantum dots and Si chemical environment,” Appl. Phys. Lett. 100(4), 042104 (2012).
[Crossref]

Seol, K. S.

H. Kato, A. Masuzawa, T. Noma, K. S. Seol, and Y. Ohki, “Thermally induced photoluminescence quenching centre in hydrogenated amorphous silicon oxynitride,” J. Phys. Condens. Matter 13(30), 6541–6549 (2001).
[Crossref]

Shao, Z.

Q. Li, T. Y. Luo, M. Zhou, H. Abroshan, J. Huang, H. J. Kim, N. L. Rosi, Z. Shao, and R. Jin, “Silicon nanoparticles with surface nitrogen: 90% quantum yield with narrow luminescence bandwidth and the ligand structure based energy law,” ACS Nano 10(9), 8385–8393 (2016).
[Crossref] [PubMed]

Shen, W. Z.

Y. X. Zhang, W. S. Wu, H. L. Hao, and W. Z. Shen, “Femtosecond laser-induced size reduction and emission quantum yield enhancement of colloidal silicon nanocrystals: effect of laser ablation time,” Nanotechnology 29(36), 365706 (2018).
[Crossref] [PubMed]

Spinella, C.

R. Ruggeri, F. Neri, A. Sciuto, V. Privitera, C. Spinella, and G. Mannino, “Luminescence properties of SiOxNy irradiated by IR laser 808nm: the role of Si quantum dots and Si chemical environment,” Appl. Phys. Lett. 100(4), 042104 (2012).
[Crossref]

Stoner, B. R.

S. Naskar, S. D. Wolter, C. A. Bower, B. R. Stoner, and J. T. Glass, “Verification of the O–Si–N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films,” Appl. Phys. Lett. 87(26), 261907 (2005).
[Crossref]

Sukhovatkin, V.

L. Dal Negro, J. H. Yi, J. Michel, L. C. Kimerling, T.-W. F. Chang, V. Sukhovatkin, and E. H. Sargent, “Light emission efficiency and dynamics in silicon-rich silicon nitride Films,” Appl. Phys. Lett. 88(23), 233109 (2006).
[Crossref]

Sunding, M. F.

P. D. Nguyen, D. M. Kepaptsoglou, Q. M. Ramasse, M. F. Sunding, L. O. Vestland, T. G. Finstad, and A. Olsen, “Impact of oxygen bonding on the atomic structure and photoluminescence properties of Si-rich silicon nitride thin films,” J. Appl. Phys. 112(7), 073514 (2012).
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W. L. Wilson, P. F. Szajowski, and L. E. Brus, “Quantum confinement in size-selected, surface-oxidized silicon nanocrystals,” Science 262(5137), 1242–1244 (1993).
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Tan, D.

P. Zhang, K. Chen, Z. Lin, D. Tan, H. Dong, W. Li, J. Xu, and X. Huang, “Dynamics of high quantum efficiency photoluminescence from N-Si-O bonding states in oxygenated amorphous silicon nitride films,” Appl. Phys. Lett. 108(11), 111103 (2016).
[Crossref]

Titova, L. V.

G. B. De los Reyes, M. Dasog, M. Na, L. V. Titova, J. G. C. Veinot, and F. A. Hegmann, “Charge transfer state emission dynamics in blue-emitting functionalized silicon nanocrystals,” Phys. Chem. Chem. Phys. 17(44), 30125–30133 (2015).
[Crossref] [PubMed]

Veinot, J. G. C.

G. B. De los Reyes, M. Dasog, M. Na, L. V. Titova, J. G. C. Veinot, and F. A. Hegmann, “Charge transfer state emission dynamics in blue-emitting functionalized silicon nanocrystals,” Phys. Chem. Chem. Phys. 17(44), 30125–30133 (2015).
[Crossref] [PubMed]

Vestland, L. O.

P. D. Nguyen, D. M. Kepaptsoglou, Q. M. Ramasse, M. F. Sunding, L. O. Vestland, T. G. Finstad, and A. Olsen, “Impact of oxygen bonding on the atomic structure and photoluminescence properties of Si-rich silicon nitride thin films,” J. Appl. Phys. 112(7), 073514 (2012).
[Crossref]

Walters, R. J.

R. J. Walters, J. Kalkman, A. Polman, H. A. Atwater, and M. J. A. de Dood, “Photoluminescence quantum efficiency of dense silicon nanocrystal ensembles in SiO2,” Phys. Rev. B Condens. Matter Mater. Phys. 73(13), 132302 (2006).
[Crossref]

Warren, W. L.

W. L. Warren, J. Kanicki, and E. H. Poindexter, “Paramagnetic point defects in silicon nitride and silicon oxynitride thin films on silicon,” Colloid Surf. A-Physicochem. Eng. Asp. 115, 311–317 (1996).
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Z. W. Lin, K. J. Chen, P. Z. Zhang, J. Xu, W. Li, H. F. Yang, and X. F. Huang, “Improved power efficiency in phosphorus doped n-a-SiNxOy/p-Si heterojunction light emitting diode,” Appl. Phys. Lett. 110(8), 081109 (2017).
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P. Z. Zhang, K. J. Chen, Z. W. Lin, H. P. Dong, W. Li, J. Xu, and X. F. Huang, “The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films,” Appl. Phys. Lett. 106(23), 231103 (2015).
[Crossref]

P. Z. Zhang, K. J. Chen, H. P. Dong, P. Zhang, Z. H. Fang, W. Li, J. Xu, and X. F. Huang, “Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm,” Appl. Phys. Lett. 105(1), 011113 (2014).
[Crossref]

Zhang, Y.

X. Liu, S. Zhao, W. Gu, Y. Zhang, X. Qiao, Z. Ni, X. Pi, and D. Yang, “Light-emitting diodes based on colloidal silicon quantum dots with octyl and phenylpropyl ligands,” ACS Appl. Mater. Interfaces 10(6), 5959–5966 (2018).
[Crossref] [PubMed]

Zhang, Y. X.

Y. X. Zhang, W. S. Wu, H. L. Hao, and W. Z. Shen, “Femtosecond laser-induced size reduction and emission quantum yield enhancement of colloidal silicon nanocrystals: effect of laser ablation time,” Nanotechnology 29(36), 365706 (2018).
[Crossref] [PubMed]

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X. Liu, S. Zhao, W. Gu, Y. Zhang, X. Qiao, Z. Ni, X. Pi, and D. Yang, “Light-emitting diodes based on colloidal silicon quantum dots with octyl and phenylpropyl ligands,” ACS Appl. Mater. Interfaces 10(6), 5959–5966 (2018).
[Crossref] [PubMed]

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[Crossref] [PubMed]

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[Crossref] [PubMed]

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[Crossref]

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P. Z. Zhang, K. J. Chen, H. P. Dong, P. Zhang, Z. H. Fang, W. Li, J. Xu, and X. F. Huang, “Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm,” Appl. Phys. Lett. 105(1), 011113 (2014).
[Crossref]

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[Crossref]

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[Crossref]

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Figures (4)

Fig. 1
Fig. 1 (a) Normalized PL spectra of a-SiNxOy films for various R. The insets are luminescent photographs of the related samples. (b) The PL QY measurement processes of a-SiNxOy samples for R = 1.5.
Fig. 2
Fig. 2 (a) The FTIR spectra of both a-SiNxOy films (R = 0.8) and the controlled a-SiNx films. (b) Enlarged Si-N and Si-O stretching mode in both of the two FTIR spectra.
Fig. 3
Fig. 3 (a) The measured first derivative EPR spectra of a-SiNxOy films (R = 0.8) and the controlled a-SiNx films. The inset shows the relative measured parameters. (b) The PL QY and the spin densities of total defects, Si DBs, and Nx defects vs. R. The inset shows the measured EPR and the deconvolved signals of a-SiNxOy films (R = 1.5).
Fig. 4
Fig. 4 (a) The measured ns-TRPL decay spectra and the relative fitted decay curves for a-SiNxOy samples with R = 1.5 at 300 K. (b) The ns-PL lifetimes vs. λemi for a-SiNxOy samples (R = 1.5) under measurement temperatures of 8 K, 80 K, 160 K, 240 K, 300 K, respectively.

Tables (1)

Tables Icon

Table 1 Summary of the fabricating parameters, Eopt, EPL and the PL QY.

Equations (1)

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P L QY= φ ext ϕ abs = φ 1 [1A]× φ 2 ϕ 0 ×A = ϕ 2 φ 1 ϕ 1 φ 2 ϕ 0 ×( ϕ 2 ϕ 1 ) , and A=1 ϕ 1 ϕ 2

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