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Random lasing in uniform perovskite thin films

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Abstract

Following the very promising results obtained by the solar cell community, metal halide perovskite materials are increasingly attracting the attention of other optoelectronics researchers, especially for light emission applications. Lasing with both engineered and self-assembled resonator structures, such as microcrystal networks, has now been successfully observed, with the low cost and the simple solution-based process being a particular attraction. The ultimate in simplicity, however, would be to observe lasing from a continuous thin film, which has not been reported yet. Here, we show random lasing action from such a simple perovskite layer. Our lasers work at room temperature; they are deposited on unpatterned glass substrates and they exhibit a minimum threshold value of 10 µJ/cm2. By carefully controlling the solution processing conditions, we can determine whether random lasing occurs or not, using identical precursors. A rather special feature is that some of the films exhibit single and dual mode lasing action, which is rarely observed in random lasers. Our work fully exploits the simplicity of the solution-based process and thereby adds an important capability into the emerging field of perovskite-based light emitters.

© 2017 Optical Society of America

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Figures (7)

Fig. 1
Fig. 1 Output emission spectra of perovskite films produced by the four methods, collected at an excitation energy of 212 µJ/cm2. The inset shows multimode lasing observed for a higher resolution scan with a film prepared using Method B3.
Fig. 2
Fig. 2 Morphology comparison for four different fabrication methods. (a): SEM image of perovskite film synthesized by the double deposition step method (Method A). (b): SEM image of perovskite film synthesized via solvent extraction method with 0 sec dip time (Method B1). (c) and (d): SEM images of perovskite films synthesized via solvent extraction method with 3 second (Method B2) and 120 second (Method B3) dip time; (e-h): AFM images of films produced by Method A, B1, B2 and B3; (i-j): cross-sectional SEM images of films produced by Method A and Method B3, viewed at an angle of 45°.
Fig. 3
Fig. 3 X-ray diffraction patterns of tetragonal-phase iodide based perovskite films synthesized by four methods.
Fig. 4
Fig. 4 Random lasing observed in a perovskite uniform thin film: (a) Single mode lasing; (b) Dual mode lasing; and (c) Multimode random lasing. All spectra were taken from the same film prepared by Method B3, under a fixed excitation intensity of 13.4 µJ/cm2.
Fig. 5
Fig. 5 All spectra collected are from Method B3 (120 sec) films. (a) Surface emission spectra for a film excited with a circular excitation spot with a diameter of 1.33 mm, with a laser threshold of 11 µJ/cm2 shown in (c) along with its Full Width Half Maximum (FWHM); (b) Amplified spontaneous emission spectra of films excited with a narrow stripe in 1.6 x 0.4 mm2 dimension and detected from the edge of the sample. The ASE threshold of 39 µJ/cm2 is shown in (d).
Fig. 6
Fig. 6 Lasing stability of random laser for 500 Hz pumping rate.
Fig. 7
Fig. 7 (a) Variable stripe length method based measurements for gain coefficient in perovskite films; (b) output emission intensity as a function of un-pumped region distant from the edge of the sample to determine loss coefficients in samples prepared by Method A, B2 and B3.

Tables (2)

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Table 1 Synthesis parameters for the four methods illustrated in Figs. 1 and 2.

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Table 2 ASE threshold and the gain and loss coefficient values.

Equations (2)

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I(λ)= A I ο g(λ) ( exp g(λ)L 1),
I= I ο e (αx) ,
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