Abstract

We report an error in Fig. 13(a) of our article [Opt. Express 25, 21286 (2017)], and the correction is presented. Typographical errors in the text are also corrected.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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References

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  1. N. Higashitarumizu and Y. Ishikawa, “Enhanced direct-gap light emission from Si-capped n+-Ge epitaxial layers on Si after post-growth rapid cyclic annealing: impact of non-radiative interface recombination toward Ge/Si double heterostructure lasers,” Opt. Express 25(18), 21286–21300 (2017).
    [Crossref] [PubMed]

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Figures (1)

Fig. 1
Fig. 1 Calculated Jth as a function of interface recombination velocity S for several different lifetimes in Ge of 0.1–100 ns.

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