Abstract

The performance of optical devices relying in vanadium dioxide (VO2) technology compatible with the silicon platform depends on the polarization of light and VO2 properties. In this work, optical switching in hybrid VO2/Si waveguides thermally triggered by lateral microheaters is achieved with insertion losses below 1 dB and extinction ratios above 20 dB in a broad bandwidth larger than 30 nm. The optical switching response has been optimized for TE and TM polarizations by using a homogeneous and a granular VO2 layer, respectively, with a small impact on the electrical power consumption. The stability and reversibility between switching states showing the possibility of bistable performance is also demonstrated.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Full Article  |  PDF Article
OSA Recommended Articles
Experimental demonstration of a tunable transverse electric pass polarizer based on hybrid VO2/silicon technology

Luis David Sánchez, Irene Olivares, Jorge Parra, Mariela Menghini, Pía Homm, Jean-Pierre Locquet, and Pablo Sanchis
Opt. Lett. 43(15) 3650-3653 (2018)

Wavelength-size hybrid Si-VO2 waveguide electroabsorption optical switches and photodetectors

Arash Joushaghani, Junho Jeong, Suzanne Paradis, David Alain, J. Stewart Aitchison, and Joyce K. S. Poon
Opt. Express 23(3) 3657-3668 (2015)

Optimized design and fabrication of polymer/silica thermo-optic switch with low power consumption

Donghai Niu, Shiqi Sun, Qiang Xu, Minghui Jiang, Xibin Wang, Zhiyong Li, Changming Chen, Yuanda Wu, and Daming Zhang
Appl. Opt. 56(21) 5799-5803 (2017)

References

  • View by:
  • |
  • |
  • |

  1. V. J. Sorger, N. D. Lanzillotti-Kimura, R. M. Ma, and X. Zhang, “Ultra-compact silicon nanophotonic modulator with broadband response,” Nanophotonics 1(1), 17–22 (2012).
    [Crossref]
  2. H. Zhang, L. Zhou, B. M. A. Rahman, X. Wu, L. Lu, Y. Xu, J. Xu, J. Song, Z. Hu, L. Xu, and J. Chen, “Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation,” IEEE Photonics J. 10(1), 1–10 (2018).
  3. H. Liang, R. Soref, J. Mu, A. Majumdar, X. Li, and W. P. Huang, “Simulations of Silicon-on-Insulator Channel-Waveguide Electrooptical 2× 2 Switches and 1× 1 Modulators Using a Ge2Sb2Te5 Self-Holding Layer,” J. Lightwave Technol. 33(9), 1805–1813 (2015).
    [Crossref]
  4. G. Seo, B. J. Kim, C. Ko, Y. Cui, Y. W. Lee, J. H. Shin, S. Ramanathan, and H. T. Kim, “Voltage-pulse induced switching dynamics in VO2 thin films devices on silicon,” IEEE Electron. Dev. Lett. 32(11), 1582–1584 (2011).
    [Crossref]
  5. Z. Yang, C. Ko, and S. Ramanathan, “Oxide electronics utilizing ultrafast metal-insulator transitions,” Annu. Rev. Mater. Res. 41(1), 337–367 (2011).
    [Crossref]
  6. W. A. Vitale, E. A. Casu, A. Biswas, T. Rosca, C. Alper, A. Krammer, G. V. Luong, Q. T. Zhao, S. Mantl, A. Schüler, and A. M. Ionescu, “A steep-slope transistor combining phase-change and band-to-band-tunneling to achieve a sub-unity body factor,” Sci. Rep. 7(1), 355–365 (2017).
    [Crossref] [PubMed]
  7. C. Ko and S. Ramanathan, “Observation of electric field assisted phase transition in thin film vanadium oxide in a metal oxide semiconductor device geometry,” Appl. Phys. Lett. 93(25), 1–4 (2008).
  8. A. Zimmers, L. Aigouy, M. Mortier, A. Sharoni, S. Wang, K. G. West, J. G. Ramirez, and I. K. Schuller, “Role of thermal heating on the voltage induced insulator-metal transition in VO2.,” Phys. Rev. Lett. 110(5), 056601 (2013).
    [Crossref] [PubMed]
  9. M. A. Kats, R. Blanchard, P. Genevet, Z. Yang, M. M. Qazilbash, D. N. Basov, S. Ramanathan, and F. Capasso, “Thermal tuning of mid-infrared plasmonic antenna arrays using a phase change material,” Opt. Lett. 38(3), 368–370 (2013).
    [Crossref] [PubMed]
  10. B. G. Chae, H. T. Kim, D. H. Youn, and K. Y. Kang, “Abrupt metal–insulator transition observed in VO2 thin films induced by a switching voltage pulse,” Phys. B Condens. Matter 369(1–4), 76–80 (2005).
  11. D. Ruzmetov, G. Gopalakrishnan, J. Deng, V. Narayanamurti, and S. Ramanathan, “Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions,” J. Appl. Phys. 106(8), 1–6 (2009).
    [Crossref]
  12. S. B. Lee, K. Kim, J. S. Oh, B. Kahng, and J. S. Lee, “Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films,” Appl. Phys. Lett. 102(6), 1–6 (2013).
    [Crossref]
  13. A. Joushaghani, J. Jeong, S. Paradis, D. Alain, J. Stewart Aitchison, and J. K. S. Poon, “Voltage-controlled switching and thermal effects in VO2 nano-gap junctions,” Appl. Phys. Lett. 104(22), 1–5 (2014).
    [Crossref]
  14. P. Markov, R. E. Marvel, H. J. Conley, K. J. Miller, R. F. Haglund, and S. M. Weiss, “Optically monitored electrical switching in VO2,” ACS Photonics 2(8), 1175–1182 (2015).
    [Crossref]
  15. Z. Yang, S. Hart, C. Ko, A. Yacoby, and S. Ramanathan, “Studies on electric triggering of the metal-insulator transition in VO2 thin films between 77 K and 300 K,” J. Appl. Phys. 110(3), 033725 (2011).
    [Crossref]
  16. J. Yoon, G. Lee, C. Park, B. S. Mun, and H. Ju, “Investigation of length-dependent characteristics of the voltage-induced metal insulator transition in VO2 film devices,” Appl. Phys. Lett. 105(8), 083503 (2014).
    [Crossref]
  17. L. Sánchez, A. Rosa, A. Griol, A. Gutierrez, P. Homm, B. Van Bilzen, M. Menghini, J. P. Locquet, and P. Sanchis, “Impact of the external resistance on the switching power consumption in VO2 nano gap junctions,” Appl. Phys. Lett. 111(3), 031904 (2017).
    [Crossref]
  18. J. D. Ryckman, V. Diez-Blanco, J. Nag, R. E. Marvel, B. K. Choi, R. F. Haglund, and S. M. Weiss, “Photothermal optical modulation of ultra-compact hybrid Si-VO2 ring resonators,” Opt. Express 20(12), 13215–13225 (2012).
    [Crossref] [PubMed]
  19. J. D. Ryckman, K. A. Hallman, R. E. Marvel, R. F. Haglund, and S. M. Weiss, “Ultra-compact silicon photonic devices reconfigured by an optically induced semiconductor-to-metal transition,” Opt. Express 21(9), 10753–10763 (2013).
    [Crossref] [PubMed]
  20. E. Abreu, S. N. Gilbert Corder, S. Jin Yun, S. Wang, J. G. Ramírez, K. West, J. Zhang, S. Kittiwatanakul, I. K. Schuller, J. Lu, S. A. Wolf, H.-T. Kim, M. Liu, and R. D. Averitt, “Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films,” Phys. Rev. B 96(9), 094309 (2017).
    [Crossref]
  21. L. Sánchez, S. Lechago, and P. Sanchis, “Ultra-compact TE and TM pass polarizers based on vanadium dioxide on silicon,” Opt. Lett. 40(7), 1452–1455 (2015).
    [Crossref] [PubMed]
  22. A. Joushaghani, J. Jeong, S. Paradis, D. Alain, J. Stewart Aitchison, and J. K. S. Poon, “Wavelength-size hybrid Si-VO2 waveguide electroabsorption optical switches and photodetectors,” Opt. Express 23(3), 3657–3668 (2015).
    [Crossref] [PubMed]
  23. L. Sánchez, F. C. Juan, A. Rosa, and P. Sanchis, “Ultra-compact electro-absorption VO2–Si modulator with TM to TE conversion,” J. Opt. 19(3), 035401 (2017).
    [Crossref]
  24. L. Sanchez, S. Lechago, A. Gutierrez, and P. Sanchis, “Analysis and Design Optimization of a Hybrid VO2/Silicon 2x2 Microring Switch,” IEEE Photonics J. 8(2), 1–9 (2016).
    [Crossref]
  25. M. Sun, W. Shieh, and R. R. Unnithan, “Design of Plasmonic Modulators with Vanadium Dioxide on Silicon-on-Insulator,” IEEE Photonics J. 9(3), 1–10 (2017).
    [Crossref]
  26. K. J. Miller, K. A. Hallman, R. F. Haglund, and S. M. Weiss, “Silicon waveguide optical switch with embedded phase change material,” Opt. Express 25(22), 26527–26536 (2017).
    [Crossref] [PubMed]
  27. J. K. Clark, Y. L. Ho, H. Matsui, and J. J. Delaunay, “Optically Pumped Hybrid Plasmonic-Photonic Waveguide Modulator Using the VO2 Metal-Insulator Phase Transition,” IEEE Photonics J. 10(1), 1–9 (2018).
    [Crossref]
  28. S. Kumar, M. D. Pickett, J. P. Strachan, G. Gibson, Y. Nishi, and R. S. Williams, “Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO2.,” Adv. Mater. 25(42), 6128–6132 (2013).
    [Crossref] [PubMed]
  29. B. S. Mun, J. Yoon, K. S. Mo, K. Chen, N. Tamura, C. Dejoie, M. Kunz, Z. Liu, C. Park, K. Moon, and H. Ju, “Role of joule heating effect and bulk-surface phases in voltage-driven metal-insulator transition in VO2 crystal,” Appl. Phys. Lett. 103(6), 061902 (2013).
    [Crossref]
  30. E. Freeman, G. Stone, N. Shukla, H. Paik, J. A. Moyer, Z. Cai, H. Wen, R. E. Herbert, D. G. Schlom, V. Gopalan, and S. Datta, “Nanoscale structural evolution of electrically driven insulator to metal transition in vanadium dioxide,” Appl. Phys. Lett. 103(26), 263109 (2013).
    [Crossref]
  31. G. Gopalakrishnan, D. Ruzmetov, and S. Ramanathan, “On the triggering mechanism for the metal–insulator transition in thin film VO2 devices: electric field versus thermal effects,” J. Mater. Sci. 44(19), 5345–5353 (2009).
    [Crossref]
  32. J. Leroy, A. Crunteanu, A. Bessaudou, F. Cosset, C. Champeaux, and J. C. Orlianges, “High-speed metal-insulator transition in vanadium dioxide films induced by an electrical pulsed voltage over nano-gap electrode,” Appl. Phys. Lett. 100(21), 213507 (2012).
    [Crossref]
  33. X. Xu, X. He, H. Wang, Q. Gu, S. Shi, H. Xing, Ch. Wang, J. Zhang, X. Chen, and J. Chu, “The extremely narrow hysteresis width of phase transition in nanocrystalline VO2 thin films with the flake grain structures,” Appl. Surf. Sci. 261, 83–87 (2012).
    [Crossref]
  34. S. Kumar, D. Lenoble, F. Maury, and N. Bahlawane, “Synthesis of vanadium oxide films with controlled morphologies: Impact on the metal–insulator transition behavior,” Phys. Status Solidi 212(7), 1582–1587 (2015).
    [Crossref]
  35. G. Guzman, R. Morineau, and J. Livage, “Synthesis of vanadium dioxide thin films from vanadium alkoxides,” Mater. Res. Bull. 29(5), 509–515 (1994).
    [Crossref]
  36. W. Gao, C. M. Wang, H. Q. Wang, V. E. Henrich, and E. I. Altman, “Growth and surface structure of vanadium oxide on anatase,” Surf. Sci. 559(2–3), 201–213 (2004).
    [Crossref]
  37. A. P. Peter, K. Martens, G. Rampelberg, M. Toeller, J. M. Ablett, J. Meersschaut, D. Cuypers, A. Franquet, C. Detavernier, J. P. Rueff, M. Schaekers, S. Van Elshocht, M. Jurczak, Ch. Adelmann, and I. P. Radu, “Metal Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control,” Adv. Funct. Mater. 25(5), 679–686 (2015).
    [Crossref]
  38. Á. Rosa, A. Gutiérrez, A. Brimont, A. Griol, and P. Sanchis, “High performace silicon 2x2 optical switch based on a thermo-optically tunable multimode interference coupler and efficient electrodes,” Opt. Express 24(1), 191–198 (2016).
    [Crossref] [PubMed]
  39. B. Van Bilzen, P. Homm, L. Dillemans, C.-Y. Su, M. Menghini, M. Sousa, C. Marchiori, L. Zhang, J. W. Seo, and J.-P. Locquet, “Production of VO2 thin films through post-deposition annealing of V2O3 and VOx films,” Thin Solid Films 591, 143–148 (2015).
    [Crossref]

2018 (2)

H. Zhang, L. Zhou, B. M. A. Rahman, X. Wu, L. Lu, Y. Xu, J. Xu, J. Song, Z. Hu, L. Xu, and J. Chen, “Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation,” IEEE Photonics J. 10(1), 1–10 (2018).

J. K. Clark, Y. L. Ho, H. Matsui, and J. J. Delaunay, “Optically Pumped Hybrid Plasmonic-Photonic Waveguide Modulator Using the VO2 Metal-Insulator Phase Transition,” IEEE Photonics J. 10(1), 1–9 (2018).
[Crossref]

2017 (6)

E. Abreu, S. N. Gilbert Corder, S. Jin Yun, S. Wang, J. G. Ramírez, K. West, J. Zhang, S. Kittiwatanakul, I. K. Schuller, J. Lu, S. A. Wolf, H.-T. Kim, M. Liu, and R. D. Averitt, “Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films,” Phys. Rev. B 96(9), 094309 (2017).
[Crossref]

L. Sánchez, F. C. Juan, A. Rosa, and P. Sanchis, “Ultra-compact electro-absorption VO2–Si modulator with TM to TE conversion,” J. Opt. 19(3), 035401 (2017).
[Crossref]

M. Sun, W. Shieh, and R. R. Unnithan, “Design of Plasmonic Modulators with Vanadium Dioxide on Silicon-on-Insulator,” IEEE Photonics J. 9(3), 1–10 (2017).
[Crossref]

K. J. Miller, K. A. Hallman, R. F. Haglund, and S. M. Weiss, “Silicon waveguide optical switch with embedded phase change material,” Opt. Express 25(22), 26527–26536 (2017).
[Crossref] [PubMed]

W. A. Vitale, E. A. Casu, A. Biswas, T. Rosca, C. Alper, A. Krammer, G. V. Luong, Q. T. Zhao, S. Mantl, A. Schüler, and A. M. Ionescu, “A steep-slope transistor combining phase-change and band-to-band-tunneling to achieve a sub-unity body factor,” Sci. Rep. 7(1), 355–365 (2017).
[Crossref] [PubMed]

L. Sánchez, A. Rosa, A. Griol, A. Gutierrez, P. Homm, B. Van Bilzen, M. Menghini, J. P. Locquet, and P. Sanchis, “Impact of the external resistance on the switching power consumption in VO2 nano gap junctions,” Appl. Phys. Lett. 111(3), 031904 (2017).
[Crossref]

2016 (2)

2015 (7)

B. Van Bilzen, P. Homm, L. Dillemans, C.-Y. Su, M. Menghini, M. Sousa, C. Marchiori, L. Zhang, J. W. Seo, and J.-P. Locquet, “Production of VO2 thin films through post-deposition annealing of V2O3 and VOx films,” Thin Solid Films 591, 143–148 (2015).
[Crossref]

A. P. Peter, K. Martens, G. Rampelberg, M. Toeller, J. M. Ablett, J. Meersschaut, D. Cuypers, A. Franquet, C. Detavernier, J. P. Rueff, M. Schaekers, S. Van Elshocht, M. Jurczak, Ch. Adelmann, and I. P. Radu, “Metal Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control,” Adv. Funct. Mater. 25(5), 679–686 (2015).
[Crossref]

L. Sánchez, S. Lechago, and P. Sanchis, “Ultra-compact TE and TM pass polarizers based on vanadium dioxide on silicon,” Opt. Lett. 40(7), 1452–1455 (2015).
[Crossref] [PubMed]

A. Joushaghani, J. Jeong, S. Paradis, D. Alain, J. Stewart Aitchison, and J. K. S. Poon, “Wavelength-size hybrid Si-VO2 waveguide electroabsorption optical switches and photodetectors,” Opt. Express 23(3), 3657–3668 (2015).
[Crossref] [PubMed]

S. Kumar, D. Lenoble, F. Maury, and N. Bahlawane, “Synthesis of vanadium oxide films with controlled morphologies: Impact on the metal–insulator transition behavior,” Phys. Status Solidi 212(7), 1582–1587 (2015).
[Crossref]

P. Markov, R. E. Marvel, H. J. Conley, K. J. Miller, R. F. Haglund, and S. M. Weiss, “Optically monitored electrical switching in VO2,” ACS Photonics 2(8), 1175–1182 (2015).
[Crossref]

H. Liang, R. Soref, J. Mu, A. Majumdar, X. Li, and W. P. Huang, “Simulations of Silicon-on-Insulator Channel-Waveguide Electrooptical 2× 2 Switches and 1× 1 Modulators Using a Ge2Sb2Te5 Self-Holding Layer,” J. Lightwave Technol. 33(9), 1805–1813 (2015).
[Crossref]

2014 (2)

A. Joushaghani, J. Jeong, S. Paradis, D. Alain, J. Stewart Aitchison, and J. K. S. Poon, “Voltage-controlled switching and thermal effects in VO2 nano-gap junctions,” Appl. Phys. Lett. 104(22), 1–5 (2014).
[Crossref]

J. Yoon, G. Lee, C. Park, B. S. Mun, and H. Ju, “Investigation of length-dependent characteristics of the voltage-induced metal insulator transition in VO2 film devices,” Appl. Phys. Lett. 105(8), 083503 (2014).
[Crossref]

2013 (7)

J. D. Ryckman, K. A. Hallman, R. E. Marvel, R. F. Haglund, and S. M. Weiss, “Ultra-compact silicon photonic devices reconfigured by an optically induced semiconductor-to-metal transition,” Opt. Express 21(9), 10753–10763 (2013).
[Crossref] [PubMed]

S. Kumar, M. D. Pickett, J. P. Strachan, G. Gibson, Y. Nishi, and R. S. Williams, “Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO2.,” Adv. Mater. 25(42), 6128–6132 (2013).
[Crossref] [PubMed]

B. S. Mun, J. Yoon, K. S. Mo, K. Chen, N. Tamura, C. Dejoie, M. Kunz, Z. Liu, C. Park, K. Moon, and H. Ju, “Role of joule heating effect and bulk-surface phases in voltage-driven metal-insulator transition in VO2 crystal,” Appl. Phys. Lett. 103(6), 061902 (2013).
[Crossref]

E. Freeman, G. Stone, N. Shukla, H. Paik, J. A. Moyer, Z. Cai, H. Wen, R. E. Herbert, D. G. Schlom, V. Gopalan, and S. Datta, “Nanoscale structural evolution of electrically driven insulator to metal transition in vanadium dioxide,” Appl. Phys. Lett. 103(26), 263109 (2013).
[Crossref]

S. B. Lee, K. Kim, J. S. Oh, B. Kahng, and J. S. Lee, “Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films,” Appl. Phys. Lett. 102(6), 1–6 (2013).
[Crossref]

A. Zimmers, L. Aigouy, M. Mortier, A. Sharoni, S. Wang, K. G. West, J. G. Ramirez, and I. K. Schuller, “Role of thermal heating on the voltage induced insulator-metal transition in VO2.,” Phys. Rev. Lett. 110(5), 056601 (2013).
[Crossref] [PubMed]

M. A. Kats, R. Blanchard, P. Genevet, Z. Yang, M. M. Qazilbash, D. N. Basov, S. Ramanathan, and F. Capasso, “Thermal tuning of mid-infrared plasmonic antenna arrays using a phase change material,” Opt. Lett. 38(3), 368–370 (2013).
[Crossref] [PubMed]

2012 (4)

V. J. Sorger, N. D. Lanzillotti-Kimura, R. M. Ma, and X. Zhang, “Ultra-compact silicon nanophotonic modulator with broadband response,” Nanophotonics 1(1), 17–22 (2012).
[Crossref]

J. D. Ryckman, V. Diez-Blanco, J. Nag, R. E. Marvel, B. K. Choi, R. F. Haglund, and S. M. Weiss, “Photothermal optical modulation of ultra-compact hybrid Si-VO2 ring resonators,” Opt. Express 20(12), 13215–13225 (2012).
[Crossref] [PubMed]

J. Leroy, A. Crunteanu, A. Bessaudou, F. Cosset, C. Champeaux, and J. C. Orlianges, “High-speed metal-insulator transition in vanadium dioxide films induced by an electrical pulsed voltage over nano-gap electrode,” Appl. Phys. Lett. 100(21), 213507 (2012).
[Crossref]

X. Xu, X. He, H. Wang, Q. Gu, S. Shi, H. Xing, Ch. Wang, J. Zhang, X. Chen, and J. Chu, “The extremely narrow hysteresis width of phase transition in nanocrystalline VO2 thin films with the flake grain structures,” Appl. Surf. Sci. 261, 83–87 (2012).
[Crossref]

2011 (3)

Z. Yang, S. Hart, C. Ko, A. Yacoby, and S. Ramanathan, “Studies on electric triggering of the metal-insulator transition in VO2 thin films between 77 K and 300 K,” J. Appl. Phys. 110(3), 033725 (2011).
[Crossref]

G. Seo, B. J. Kim, C. Ko, Y. Cui, Y. W. Lee, J. H. Shin, S. Ramanathan, and H. T. Kim, “Voltage-pulse induced switching dynamics in VO2 thin films devices on silicon,” IEEE Electron. Dev. Lett. 32(11), 1582–1584 (2011).
[Crossref]

Z. Yang, C. Ko, and S. Ramanathan, “Oxide electronics utilizing ultrafast metal-insulator transitions,” Annu. Rev. Mater. Res. 41(1), 337–367 (2011).
[Crossref]

2009 (2)

D. Ruzmetov, G. Gopalakrishnan, J. Deng, V. Narayanamurti, and S. Ramanathan, “Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions,” J. Appl. Phys. 106(8), 1–6 (2009).
[Crossref]

G. Gopalakrishnan, D. Ruzmetov, and S. Ramanathan, “On the triggering mechanism for the metal–insulator transition in thin film VO2 devices: electric field versus thermal effects,” J. Mater. Sci. 44(19), 5345–5353 (2009).
[Crossref]

2008 (1)

C. Ko and S. Ramanathan, “Observation of electric field assisted phase transition in thin film vanadium oxide in a metal oxide semiconductor device geometry,” Appl. Phys. Lett. 93(25), 1–4 (2008).

2005 (1)

B. G. Chae, H. T. Kim, D. H. Youn, and K. Y. Kang, “Abrupt metal–insulator transition observed in VO2 thin films induced by a switching voltage pulse,” Phys. B Condens. Matter 369(1–4), 76–80 (2005).

2004 (1)

W. Gao, C. M. Wang, H. Q. Wang, V. E. Henrich, and E. I. Altman, “Growth and surface structure of vanadium oxide on anatase,” Surf. Sci. 559(2–3), 201–213 (2004).
[Crossref]

1994 (1)

G. Guzman, R. Morineau, and J. Livage, “Synthesis of vanadium dioxide thin films from vanadium alkoxides,” Mater. Res. Bull. 29(5), 509–515 (1994).
[Crossref]

Ablett, J. M.

A. P. Peter, K. Martens, G. Rampelberg, M. Toeller, J. M. Ablett, J. Meersschaut, D. Cuypers, A. Franquet, C. Detavernier, J. P. Rueff, M. Schaekers, S. Van Elshocht, M. Jurczak, Ch. Adelmann, and I. P. Radu, “Metal Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control,” Adv. Funct. Mater. 25(5), 679–686 (2015).
[Crossref]

Abreu, E.

E. Abreu, S. N. Gilbert Corder, S. Jin Yun, S. Wang, J. G. Ramírez, K. West, J. Zhang, S. Kittiwatanakul, I. K. Schuller, J. Lu, S. A. Wolf, H.-T. Kim, M. Liu, and R. D. Averitt, “Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films,” Phys. Rev. B 96(9), 094309 (2017).
[Crossref]

Adelmann, Ch.

A. P. Peter, K. Martens, G. Rampelberg, M. Toeller, J. M. Ablett, J. Meersschaut, D. Cuypers, A. Franquet, C. Detavernier, J. P. Rueff, M. Schaekers, S. Van Elshocht, M. Jurczak, Ch. Adelmann, and I. P. Radu, “Metal Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control,” Adv. Funct. Mater. 25(5), 679–686 (2015).
[Crossref]

Aigouy, L.

A. Zimmers, L. Aigouy, M. Mortier, A. Sharoni, S. Wang, K. G. West, J. G. Ramirez, and I. K. Schuller, “Role of thermal heating on the voltage induced insulator-metal transition in VO2.,” Phys. Rev. Lett. 110(5), 056601 (2013).
[Crossref] [PubMed]

Alain, D.

A. Joushaghani, J. Jeong, S. Paradis, D. Alain, J. Stewart Aitchison, and J. K. S. Poon, “Wavelength-size hybrid Si-VO2 waveguide electroabsorption optical switches and photodetectors,” Opt. Express 23(3), 3657–3668 (2015).
[Crossref] [PubMed]

A. Joushaghani, J. Jeong, S. Paradis, D. Alain, J. Stewart Aitchison, and J. K. S. Poon, “Voltage-controlled switching and thermal effects in VO2 nano-gap junctions,” Appl. Phys. Lett. 104(22), 1–5 (2014).
[Crossref]

Alper, C.

W. A. Vitale, E. A. Casu, A. Biswas, T. Rosca, C. Alper, A. Krammer, G. V. Luong, Q. T. Zhao, S. Mantl, A. Schüler, and A. M. Ionescu, “A steep-slope transistor combining phase-change and band-to-band-tunneling to achieve a sub-unity body factor,” Sci. Rep. 7(1), 355–365 (2017).
[Crossref] [PubMed]

Altman, E. I.

W. Gao, C. M. Wang, H. Q. Wang, V. E. Henrich, and E. I. Altman, “Growth and surface structure of vanadium oxide on anatase,” Surf. Sci. 559(2–3), 201–213 (2004).
[Crossref]

Averitt, R. D.

E. Abreu, S. N. Gilbert Corder, S. Jin Yun, S. Wang, J. G. Ramírez, K. West, J. Zhang, S. Kittiwatanakul, I. K. Schuller, J. Lu, S. A. Wolf, H.-T. Kim, M. Liu, and R. D. Averitt, “Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films,” Phys. Rev. B 96(9), 094309 (2017).
[Crossref]

Bahlawane, N.

S. Kumar, D. Lenoble, F. Maury, and N. Bahlawane, “Synthesis of vanadium oxide films with controlled morphologies: Impact on the metal–insulator transition behavior,” Phys. Status Solidi 212(7), 1582–1587 (2015).
[Crossref]

Basov, D. N.

Bessaudou, A.

J. Leroy, A. Crunteanu, A. Bessaudou, F. Cosset, C. Champeaux, and J. C. Orlianges, “High-speed metal-insulator transition in vanadium dioxide films induced by an electrical pulsed voltage over nano-gap electrode,” Appl. Phys. Lett. 100(21), 213507 (2012).
[Crossref]

Biswas, A.

W. A. Vitale, E. A. Casu, A. Biswas, T. Rosca, C. Alper, A. Krammer, G. V. Luong, Q. T. Zhao, S. Mantl, A. Schüler, and A. M. Ionescu, “A steep-slope transistor combining phase-change and band-to-band-tunneling to achieve a sub-unity body factor,” Sci. Rep. 7(1), 355–365 (2017).
[Crossref] [PubMed]

Blanchard, R.

Brimont, A.

Cai, Z.

E. Freeman, G. Stone, N. Shukla, H. Paik, J. A. Moyer, Z. Cai, H. Wen, R. E. Herbert, D. G. Schlom, V. Gopalan, and S. Datta, “Nanoscale structural evolution of electrically driven insulator to metal transition in vanadium dioxide,” Appl. Phys. Lett. 103(26), 263109 (2013).
[Crossref]

Capasso, F.

Casu, E. A.

W. A. Vitale, E. A. Casu, A. Biswas, T. Rosca, C. Alper, A. Krammer, G. V. Luong, Q. T. Zhao, S. Mantl, A. Schüler, and A. M. Ionescu, “A steep-slope transistor combining phase-change and band-to-band-tunneling to achieve a sub-unity body factor,” Sci. Rep. 7(1), 355–365 (2017).
[Crossref] [PubMed]

Chae, B. G.

B. G. Chae, H. T. Kim, D. H. Youn, and K. Y. Kang, “Abrupt metal–insulator transition observed in VO2 thin films induced by a switching voltage pulse,” Phys. B Condens. Matter 369(1–4), 76–80 (2005).

Champeaux, C.

J. Leroy, A. Crunteanu, A. Bessaudou, F. Cosset, C. Champeaux, and J. C. Orlianges, “High-speed metal-insulator transition in vanadium dioxide films induced by an electrical pulsed voltage over nano-gap electrode,” Appl. Phys. Lett. 100(21), 213507 (2012).
[Crossref]

Chen, J.

H. Zhang, L. Zhou, B. M. A. Rahman, X. Wu, L. Lu, Y. Xu, J. Xu, J. Song, Z. Hu, L. Xu, and J. Chen, “Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation,” IEEE Photonics J. 10(1), 1–10 (2018).

Chen, K.

B. S. Mun, J. Yoon, K. S. Mo, K. Chen, N. Tamura, C. Dejoie, M. Kunz, Z. Liu, C. Park, K. Moon, and H. Ju, “Role of joule heating effect and bulk-surface phases in voltage-driven metal-insulator transition in VO2 crystal,” Appl. Phys. Lett. 103(6), 061902 (2013).
[Crossref]

Chen, X.

X. Xu, X. He, H. Wang, Q. Gu, S. Shi, H. Xing, Ch. Wang, J. Zhang, X. Chen, and J. Chu, “The extremely narrow hysteresis width of phase transition in nanocrystalline VO2 thin films with the flake grain structures,” Appl. Surf. Sci. 261, 83–87 (2012).
[Crossref]

Choi, B. K.

Chu, J.

X. Xu, X. He, H. Wang, Q. Gu, S. Shi, H. Xing, Ch. Wang, J. Zhang, X. Chen, and J. Chu, “The extremely narrow hysteresis width of phase transition in nanocrystalline VO2 thin films with the flake grain structures,” Appl. Surf. Sci. 261, 83–87 (2012).
[Crossref]

Clark, J. K.

J. K. Clark, Y. L. Ho, H. Matsui, and J. J. Delaunay, “Optically Pumped Hybrid Plasmonic-Photonic Waveguide Modulator Using the VO2 Metal-Insulator Phase Transition,” IEEE Photonics J. 10(1), 1–9 (2018).
[Crossref]

Conley, H. J.

P. Markov, R. E. Marvel, H. J. Conley, K. J. Miller, R. F. Haglund, and S. M. Weiss, “Optically monitored electrical switching in VO2,” ACS Photonics 2(8), 1175–1182 (2015).
[Crossref]

Cosset, F.

J. Leroy, A. Crunteanu, A. Bessaudou, F. Cosset, C. Champeaux, and J. C. Orlianges, “High-speed metal-insulator transition in vanadium dioxide films induced by an electrical pulsed voltage over nano-gap electrode,” Appl. Phys. Lett. 100(21), 213507 (2012).
[Crossref]

Crunteanu, A.

J. Leroy, A. Crunteanu, A. Bessaudou, F. Cosset, C. Champeaux, and J. C. Orlianges, “High-speed metal-insulator transition in vanadium dioxide films induced by an electrical pulsed voltage over nano-gap electrode,” Appl. Phys. Lett. 100(21), 213507 (2012).
[Crossref]

Cui, Y.

G. Seo, B. J. Kim, C. Ko, Y. Cui, Y. W. Lee, J. H. Shin, S. Ramanathan, and H. T. Kim, “Voltage-pulse induced switching dynamics in VO2 thin films devices on silicon,” IEEE Electron. Dev. Lett. 32(11), 1582–1584 (2011).
[Crossref]

Cuypers, D.

A. P. Peter, K. Martens, G. Rampelberg, M. Toeller, J. M. Ablett, J. Meersschaut, D. Cuypers, A. Franquet, C. Detavernier, J. P. Rueff, M. Schaekers, S. Van Elshocht, M. Jurczak, Ch. Adelmann, and I. P. Radu, “Metal Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control,” Adv. Funct. Mater. 25(5), 679–686 (2015).
[Crossref]

Datta, S.

E. Freeman, G. Stone, N. Shukla, H. Paik, J. A. Moyer, Z. Cai, H. Wen, R. E. Herbert, D. G. Schlom, V. Gopalan, and S. Datta, “Nanoscale structural evolution of electrically driven insulator to metal transition in vanadium dioxide,” Appl. Phys. Lett. 103(26), 263109 (2013).
[Crossref]

Dejoie, C.

B. S. Mun, J. Yoon, K. S. Mo, K. Chen, N. Tamura, C. Dejoie, M. Kunz, Z. Liu, C. Park, K. Moon, and H. Ju, “Role of joule heating effect and bulk-surface phases in voltage-driven metal-insulator transition in VO2 crystal,” Appl. Phys. Lett. 103(6), 061902 (2013).
[Crossref]

Delaunay, J. J.

J. K. Clark, Y. L. Ho, H. Matsui, and J. J. Delaunay, “Optically Pumped Hybrid Plasmonic-Photonic Waveguide Modulator Using the VO2 Metal-Insulator Phase Transition,” IEEE Photonics J. 10(1), 1–9 (2018).
[Crossref]

Deng, J.

D. Ruzmetov, G. Gopalakrishnan, J. Deng, V. Narayanamurti, and S. Ramanathan, “Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions,” J. Appl. Phys. 106(8), 1–6 (2009).
[Crossref]

Detavernier, C.

A. P. Peter, K. Martens, G. Rampelberg, M. Toeller, J. M. Ablett, J. Meersschaut, D. Cuypers, A. Franquet, C. Detavernier, J. P. Rueff, M. Schaekers, S. Van Elshocht, M. Jurczak, Ch. Adelmann, and I. P. Radu, “Metal Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control,” Adv. Funct. Mater. 25(5), 679–686 (2015).
[Crossref]

Diez-Blanco, V.

Dillemans, L.

B. Van Bilzen, P. Homm, L. Dillemans, C.-Y. Su, M. Menghini, M. Sousa, C. Marchiori, L. Zhang, J. W. Seo, and J.-P. Locquet, “Production of VO2 thin films through post-deposition annealing of V2O3 and VOx films,” Thin Solid Films 591, 143–148 (2015).
[Crossref]

Franquet, A.

A. P. Peter, K. Martens, G. Rampelberg, M. Toeller, J. M. Ablett, J. Meersschaut, D. Cuypers, A. Franquet, C. Detavernier, J. P. Rueff, M. Schaekers, S. Van Elshocht, M. Jurczak, Ch. Adelmann, and I. P. Radu, “Metal Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control,” Adv. Funct. Mater. 25(5), 679–686 (2015).
[Crossref]

Freeman, E.

E. Freeman, G. Stone, N. Shukla, H. Paik, J. A. Moyer, Z. Cai, H. Wen, R. E. Herbert, D. G. Schlom, V. Gopalan, and S. Datta, “Nanoscale structural evolution of electrically driven insulator to metal transition in vanadium dioxide,” Appl. Phys. Lett. 103(26), 263109 (2013).
[Crossref]

Gao, W.

W. Gao, C. M. Wang, H. Q. Wang, V. E. Henrich, and E. I. Altman, “Growth and surface structure of vanadium oxide on anatase,” Surf. Sci. 559(2–3), 201–213 (2004).
[Crossref]

Genevet, P.

Gibson, G.

S. Kumar, M. D. Pickett, J. P. Strachan, G. Gibson, Y. Nishi, and R. S. Williams, “Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO2.,” Adv. Mater. 25(42), 6128–6132 (2013).
[Crossref] [PubMed]

Gilbert Corder, S. N.

E. Abreu, S. N. Gilbert Corder, S. Jin Yun, S. Wang, J. G. Ramírez, K. West, J. Zhang, S. Kittiwatanakul, I. K. Schuller, J. Lu, S. A. Wolf, H.-T. Kim, M. Liu, and R. D. Averitt, “Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films,” Phys. Rev. B 96(9), 094309 (2017).
[Crossref]

Gopalakrishnan, G.

G. Gopalakrishnan, D. Ruzmetov, and S. Ramanathan, “On the triggering mechanism for the metal–insulator transition in thin film VO2 devices: electric field versus thermal effects,” J. Mater. Sci. 44(19), 5345–5353 (2009).
[Crossref]

D. Ruzmetov, G. Gopalakrishnan, J. Deng, V. Narayanamurti, and S. Ramanathan, “Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions,” J. Appl. Phys. 106(8), 1–6 (2009).
[Crossref]

Gopalan, V.

E. Freeman, G. Stone, N. Shukla, H. Paik, J. A. Moyer, Z. Cai, H. Wen, R. E. Herbert, D. G. Schlom, V. Gopalan, and S. Datta, “Nanoscale structural evolution of electrically driven insulator to metal transition in vanadium dioxide,” Appl. Phys. Lett. 103(26), 263109 (2013).
[Crossref]

Griol, A.

L. Sánchez, A. Rosa, A. Griol, A. Gutierrez, P. Homm, B. Van Bilzen, M. Menghini, J. P. Locquet, and P. Sanchis, “Impact of the external resistance on the switching power consumption in VO2 nano gap junctions,” Appl. Phys. Lett. 111(3), 031904 (2017).
[Crossref]

Á. Rosa, A. Gutiérrez, A. Brimont, A. Griol, and P. Sanchis, “High performace silicon 2x2 optical switch based on a thermo-optically tunable multimode interference coupler and efficient electrodes,” Opt. Express 24(1), 191–198 (2016).
[Crossref] [PubMed]

Gu, Q.

X. Xu, X. He, H. Wang, Q. Gu, S. Shi, H. Xing, Ch. Wang, J. Zhang, X. Chen, and J. Chu, “The extremely narrow hysteresis width of phase transition in nanocrystalline VO2 thin films with the flake grain structures,” Appl. Surf. Sci. 261, 83–87 (2012).
[Crossref]

Gutierrez, A.

L. Sánchez, A. Rosa, A. Griol, A. Gutierrez, P. Homm, B. Van Bilzen, M. Menghini, J. P. Locquet, and P. Sanchis, “Impact of the external resistance on the switching power consumption in VO2 nano gap junctions,” Appl. Phys. Lett. 111(3), 031904 (2017).
[Crossref]

L. Sanchez, S. Lechago, A. Gutierrez, and P. Sanchis, “Analysis and Design Optimization of a Hybrid VO2/Silicon 2x2 Microring Switch,” IEEE Photonics J. 8(2), 1–9 (2016).
[Crossref]

Gutiérrez, A.

Guzman, G.

G. Guzman, R. Morineau, and J. Livage, “Synthesis of vanadium dioxide thin films from vanadium alkoxides,” Mater. Res. Bull. 29(5), 509–515 (1994).
[Crossref]

Haglund, R. F.

Hallman, K. A.

Hart, S.

Z. Yang, S. Hart, C. Ko, A. Yacoby, and S. Ramanathan, “Studies on electric triggering of the metal-insulator transition in VO2 thin films between 77 K and 300 K,” J. Appl. Phys. 110(3), 033725 (2011).
[Crossref]

He, X.

X. Xu, X. He, H. Wang, Q. Gu, S. Shi, H. Xing, Ch. Wang, J. Zhang, X. Chen, and J. Chu, “The extremely narrow hysteresis width of phase transition in nanocrystalline VO2 thin films with the flake grain structures,” Appl. Surf. Sci. 261, 83–87 (2012).
[Crossref]

Henrich, V. E.

W. Gao, C. M. Wang, H. Q. Wang, V. E. Henrich, and E. I. Altman, “Growth and surface structure of vanadium oxide on anatase,” Surf. Sci. 559(2–3), 201–213 (2004).
[Crossref]

Herbert, R. E.

E. Freeman, G. Stone, N. Shukla, H. Paik, J. A. Moyer, Z. Cai, H. Wen, R. E. Herbert, D. G. Schlom, V. Gopalan, and S. Datta, “Nanoscale structural evolution of electrically driven insulator to metal transition in vanadium dioxide,” Appl. Phys. Lett. 103(26), 263109 (2013).
[Crossref]

Ho, Y. L.

J. K. Clark, Y. L. Ho, H. Matsui, and J. J. Delaunay, “Optically Pumped Hybrid Plasmonic-Photonic Waveguide Modulator Using the VO2 Metal-Insulator Phase Transition,” IEEE Photonics J. 10(1), 1–9 (2018).
[Crossref]

Homm, P.

L. Sánchez, A. Rosa, A. Griol, A. Gutierrez, P. Homm, B. Van Bilzen, M. Menghini, J. P. Locquet, and P. Sanchis, “Impact of the external resistance on the switching power consumption in VO2 nano gap junctions,” Appl. Phys. Lett. 111(3), 031904 (2017).
[Crossref]

B. Van Bilzen, P. Homm, L. Dillemans, C.-Y. Su, M. Menghini, M. Sousa, C. Marchiori, L. Zhang, J. W. Seo, and J.-P. Locquet, “Production of VO2 thin films through post-deposition annealing of V2O3 and VOx films,” Thin Solid Films 591, 143–148 (2015).
[Crossref]

Hu, Z.

H. Zhang, L. Zhou, B. M. A. Rahman, X. Wu, L. Lu, Y. Xu, J. Xu, J. Song, Z. Hu, L. Xu, and J. Chen, “Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation,” IEEE Photonics J. 10(1), 1–10 (2018).

Huang, W. P.

Ionescu, A. M.

W. A. Vitale, E. A. Casu, A. Biswas, T. Rosca, C. Alper, A. Krammer, G. V. Luong, Q. T. Zhao, S. Mantl, A. Schüler, and A. M. Ionescu, “A steep-slope transistor combining phase-change and band-to-band-tunneling to achieve a sub-unity body factor,” Sci. Rep. 7(1), 355–365 (2017).
[Crossref] [PubMed]

Jeong, J.

A. Joushaghani, J. Jeong, S. Paradis, D. Alain, J. Stewart Aitchison, and J. K. S. Poon, “Wavelength-size hybrid Si-VO2 waveguide electroabsorption optical switches and photodetectors,” Opt. Express 23(3), 3657–3668 (2015).
[Crossref] [PubMed]

A. Joushaghani, J. Jeong, S. Paradis, D. Alain, J. Stewart Aitchison, and J. K. S. Poon, “Voltage-controlled switching and thermal effects in VO2 nano-gap junctions,” Appl. Phys. Lett. 104(22), 1–5 (2014).
[Crossref]

Jin Yun, S.

E. Abreu, S. N. Gilbert Corder, S. Jin Yun, S. Wang, J. G. Ramírez, K. West, J. Zhang, S. Kittiwatanakul, I. K. Schuller, J. Lu, S. A. Wolf, H.-T. Kim, M. Liu, and R. D. Averitt, “Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films,” Phys. Rev. B 96(9), 094309 (2017).
[Crossref]

Joushaghani, A.

A. Joushaghani, J. Jeong, S. Paradis, D. Alain, J. Stewart Aitchison, and J. K. S. Poon, “Wavelength-size hybrid Si-VO2 waveguide electroabsorption optical switches and photodetectors,” Opt. Express 23(3), 3657–3668 (2015).
[Crossref] [PubMed]

A. Joushaghani, J. Jeong, S. Paradis, D. Alain, J. Stewart Aitchison, and J. K. S. Poon, “Voltage-controlled switching and thermal effects in VO2 nano-gap junctions,” Appl. Phys. Lett. 104(22), 1–5 (2014).
[Crossref]

Ju, H.

J. Yoon, G. Lee, C. Park, B. S. Mun, and H. Ju, “Investigation of length-dependent characteristics of the voltage-induced metal insulator transition in VO2 film devices,” Appl. Phys. Lett. 105(8), 083503 (2014).
[Crossref]

B. S. Mun, J. Yoon, K. S. Mo, K. Chen, N. Tamura, C. Dejoie, M. Kunz, Z. Liu, C. Park, K. Moon, and H. Ju, “Role of joule heating effect and bulk-surface phases in voltage-driven metal-insulator transition in VO2 crystal,” Appl. Phys. Lett. 103(6), 061902 (2013).
[Crossref]

Juan, F. C.

L. Sánchez, F. C. Juan, A. Rosa, and P. Sanchis, “Ultra-compact electro-absorption VO2–Si modulator with TM to TE conversion,” J. Opt. 19(3), 035401 (2017).
[Crossref]

Jurczak, M.

A. P. Peter, K. Martens, G. Rampelberg, M. Toeller, J. M. Ablett, J. Meersschaut, D. Cuypers, A. Franquet, C. Detavernier, J. P. Rueff, M. Schaekers, S. Van Elshocht, M. Jurczak, Ch. Adelmann, and I. P. Radu, “Metal Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control,” Adv. Funct. Mater. 25(5), 679–686 (2015).
[Crossref]

Kahng, B.

S. B. Lee, K. Kim, J. S. Oh, B. Kahng, and J. S. Lee, “Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films,” Appl. Phys. Lett. 102(6), 1–6 (2013).
[Crossref]

Kang, K. Y.

B. G. Chae, H. T. Kim, D. H. Youn, and K. Y. Kang, “Abrupt metal–insulator transition observed in VO2 thin films induced by a switching voltage pulse,” Phys. B Condens. Matter 369(1–4), 76–80 (2005).

Kats, M. A.

Kim, B. J.

G. Seo, B. J. Kim, C. Ko, Y. Cui, Y. W. Lee, J. H. Shin, S. Ramanathan, and H. T. Kim, “Voltage-pulse induced switching dynamics in VO2 thin films devices on silicon,” IEEE Electron. Dev. Lett. 32(11), 1582–1584 (2011).
[Crossref]

Kim, H. T.

G. Seo, B. J. Kim, C. Ko, Y. Cui, Y. W. Lee, J. H. Shin, S. Ramanathan, and H. T. Kim, “Voltage-pulse induced switching dynamics in VO2 thin films devices on silicon,” IEEE Electron. Dev. Lett. 32(11), 1582–1584 (2011).
[Crossref]

B. G. Chae, H. T. Kim, D. H. Youn, and K. Y. Kang, “Abrupt metal–insulator transition observed in VO2 thin films induced by a switching voltage pulse,” Phys. B Condens. Matter 369(1–4), 76–80 (2005).

Kim, H.-T.

E. Abreu, S. N. Gilbert Corder, S. Jin Yun, S. Wang, J. G. Ramírez, K. West, J. Zhang, S. Kittiwatanakul, I. K. Schuller, J. Lu, S. A. Wolf, H.-T. Kim, M. Liu, and R. D. Averitt, “Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films,” Phys. Rev. B 96(9), 094309 (2017).
[Crossref]

Kim, K.

S. B. Lee, K. Kim, J. S. Oh, B. Kahng, and J. S. Lee, “Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films,” Appl. Phys. Lett. 102(6), 1–6 (2013).
[Crossref]

Kittiwatanakul, S.

E. Abreu, S. N. Gilbert Corder, S. Jin Yun, S. Wang, J. G. Ramírez, K. West, J. Zhang, S. Kittiwatanakul, I. K. Schuller, J. Lu, S. A. Wolf, H.-T. Kim, M. Liu, and R. D. Averitt, “Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films,” Phys. Rev. B 96(9), 094309 (2017).
[Crossref]

Ko, C.

Z. Yang, S. Hart, C. Ko, A. Yacoby, and S. Ramanathan, “Studies on electric triggering of the metal-insulator transition in VO2 thin films between 77 K and 300 K,” J. Appl. Phys. 110(3), 033725 (2011).
[Crossref]

G. Seo, B. J. Kim, C. Ko, Y. Cui, Y. W. Lee, J. H. Shin, S. Ramanathan, and H. T. Kim, “Voltage-pulse induced switching dynamics in VO2 thin films devices on silicon,” IEEE Electron. Dev. Lett. 32(11), 1582–1584 (2011).
[Crossref]

Z. Yang, C. Ko, and S. Ramanathan, “Oxide electronics utilizing ultrafast metal-insulator transitions,” Annu. Rev. Mater. Res. 41(1), 337–367 (2011).
[Crossref]

C. Ko and S. Ramanathan, “Observation of electric field assisted phase transition in thin film vanadium oxide in a metal oxide semiconductor device geometry,” Appl. Phys. Lett. 93(25), 1–4 (2008).

Krammer, A.

W. A. Vitale, E. A. Casu, A. Biswas, T. Rosca, C. Alper, A. Krammer, G. V. Luong, Q. T. Zhao, S. Mantl, A. Schüler, and A. M. Ionescu, “A steep-slope transistor combining phase-change and band-to-band-tunneling to achieve a sub-unity body factor,” Sci. Rep. 7(1), 355–365 (2017).
[Crossref] [PubMed]

Kumar, S.

S. Kumar, D. Lenoble, F. Maury, and N. Bahlawane, “Synthesis of vanadium oxide films with controlled morphologies: Impact on the metal–insulator transition behavior,” Phys. Status Solidi 212(7), 1582–1587 (2015).
[Crossref]

S. Kumar, M. D. Pickett, J. P. Strachan, G. Gibson, Y. Nishi, and R. S. Williams, “Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO2.,” Adv. Mater. 25(42), 6128–6132 (2013).
[Crossref] [PubMed]

Kunz, M.

B. S. Mun, J. Yoon, K. S. Mo, K. Chen, N. Tamura, C. Dejoie, M. Kunz, Z. Liu, C. Park, K. Moon, and H. Ju, “Role of joule heating effect and bulk-surface phases in voltage-driven metal-insulator transition in VO2 crystal,” Appl. Phys. Lett. 103(6), 061902 (2013).
[Crossref]

Lanzillotti-Kimura, N. D.

V. J. Sorger, N. D. Lanzillotti-Kimura, R. M. Ma, and X. Zhang, “Ultra-compact silicon nanophotonic modulator with broadband response,” Nanophotonics 1(1), 17–22 (2012).
[Crossref]

Lechago, S.

L. Sanchez, S. Lechago, A. Gutierrez, and P. Sanchis, “Analysis and Design Optimization of a Hybrid VO2/Silicon 2x2 Microring Switch,” IEEE Photonics J. 8(2), 1–9 (2016).
[Crossref]

L. Sánchez, S. Lechago, and P. Sanchis, “Ultra-compact TE and TM pass polarizers based on vanadium dioxide on silicon,” Opt. Lett. 40(7), 1452–1455 (2015).
[Crossref] [PubMed]

Lee, G.

J. Yoon, G. Lee, C. Park, B. S. Mun, and H. Ju, “Investigation of length-dependent characteristics of the voltage-induced metal insulator transition in VO2 film devices,” Appl. Phys. Lett. 105(8), 083503 (2014).
[Crossref]

Lee, J. S.

S. B. Lee, K. Kim, J. S. Oh, B. Kahng, and J. S. Lee, “Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films,” Appl. Phys. Lett. 102(6), 1–6 (2013).
[Crossref]

Lee, S. B.

S. B. Lee, K. Kim, J. S. Oh, B. Kahng, and J. S. Lee, “Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films,” Appl. Phys. Lett. 102(6), 1–6 (2013).
[Crossref]

Lee, Y. W.

G. Seo, B. J. Kim, C. Ko, Y. Cui, Y. W. Lee, J. H. Shin, S. Ramanathan, and H. T. Kim, “Voltage-pulse induced switching dynamics in VO2 thin films devices on silicon,” IEEE Electron. Dev. Lett. 32(11), 1582–1584 (2011).
[Crossref]

Lenoble, D.

S. Kumar, D. Lenoble, F. Maury, and N. Bahlawane, “Synthesis of vanadium oxide films with controlled morphologies: Impact on the metal–insulator transition behavior,” Phys. Status Solidi 212(7), 1582–1587 (2015).
[Crossref]

Leroy, J.

J. Leroy, A. Crunteanu, A. Bessaudou, F. Cosset, C. Champeaux, and J. C. Orlianges, “High-speed metal-insulator transition in vanadium dioxide films induced by an electrical pulsed voltage over nano-gap electrode,” Appl. Phys. Lett. 100(21), 213507 (2012).
[Crossref]

Li, X.

Liang, H.

Liu, M.

E. Abreu, S. N. Gilbert Corder, S. Jin Yun, S. Wang, J. G. Ramírez, K. West, J. Zhang, S. Kittiwatanakul, I. K. Schuller, J. Lu, S. A. Wolf, H.-T. Kim, M. Liu, and R. D. Averitt, “Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films,” Phys. Rev. B 96(9), 094309 (2017).
[Crossref]

Liu, Z.

B. S. Mun, J. Yoon, K. S. Mo, K. Chen, N. Tamura, C. Dejoie, M. Kunz, Z. Liu, C. Park, K. Moon, and H. Ju, “Role of joule heating effect and bulk-surface phases in voltage-driven metal-insulator transition in VO2 crystal,” Appl. Phys. Lett. 103(6), 061902 (2013).
[Crossref]

Livage, J.

G. Guzman, R. Morineau, and J. Livage, “Synthesis of vanadium dioxide thin films from vanadium alkoxides,” Mater. Res. Bull. 29(5), 509–515 (1994).
[Crossref]

Locquet, J. P.

L. Sánchez, A. Rosa, A. Griol, A. Gutierrez, P. Homm, B. Van Bilzen, M. Menghini, J. P. Locquet, and P. Sanchis, “Impact of the external resistance on the switching power consumption in VO2 nano gap junctions,” Appl. Phys. Lett. 111(3), 031904 (2017).
[Crossref]

Locquet, J.-P.

B. Van Bilzen, P. Homm, L. Dillemans, C.-Y. Su, M. Menghini, M. Sousa, C. Marchiori, L. Zhang, J. W. Seo, and J.-P. Locquet, “Production of VO2 thin films through post-deposition annealing of V2O3 and VOx films,” Thin Solid Films 591, 143–148 (2015).
[Crossref]

Lu, J.

E. Abreu, S. N. Gilbert Corder, S. Jin Yun, S. Wang, J. G. Ramírez, K. West, J. Zhang, S. Kittiwatanakul, I. K. Schuller, J. Lu, S. A. Wolf, H.-T. Kim, M. Liu, and R. D. Averitt, “Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films,” Phys. Rev. B 96(9), 094309 (2017).
[Crossref]

Lu, L.

H. Zhang, L. Zhou, B. M. A. Rahman, X. Wu, L. Lu, Y. Xu, J. Xu, J. Song, Z. Hu, L. Xu, and J. Chen, “Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation,” IEEE Photonics J. 10(1), 1–10 (2018).

Luong, G. V.

W. A. Vitale, E. A. Casu, A. Biswas, T. Rosca, C. Alper, A. Krammer, G. V. Luong, Q. T. Zhao, S. Mantl, A. Schüler, and A. M. Ionescu, “A steep-slope transistor combining phase-change and band-to-band-tunneling to achieve a sub-unity body factor,” Sci. Rep. 7(1), 355–365 (2017).
[Crossref] [PubMed]

Ma, R. M.

V. J. Sorger, N. D. Lanzillotti-Kimura, R. M. Ma, and X. Zhang, “Ultra-compact silicon nanophotonic modulator with broadband response,” Nanophotonics 1(1), 17–22 (2012).
[Crossref]

Majumdar, A.

Mantl, S.

W. A. Vitale, E. A. Casu, A. Biswas, T. Rosca, C. Alper, A. Krammer, G. V. Luong, Q. T. Zhao, S. Mantl, A. Schüler, and A. M. Ionescu, “A steep-slope transistor combining phase-change and band-to-band-tunneling to achieve a sub-unity body factor,” Sci. Rep. 7(1), 355–365 (2017).
[Crossref] [PubMed]

Marchiori, C.

B. Van Bilzen, P. Homm, L. Dillemans, C.-Y. Su, M. Menghini, M. Sousa, C. Marchiori, L. Zhang, J. W. Seo, and J.-P. Locquet, “Production of VO2 thin films through post-deposition annealing of V2O3 and VOx films,” Thin Solid Films 591, 143–148 (2015).
[Crossref]

Markov, P.

P. Markov, R. E. Marvel, H. J. Conley, K. J. Miller, R. F. Haglund, and S. M. Weiss, “Optically monitored electrical switching in VO2,” ACS Photonics 2(8), 1175–1182 (2015).
[Crossref]

Martens, K.

A. P. Peter, K. Martens, G. Rampelberg, M. Toeller, J. M. Ablett, J. Meersschaut, D. Cuypers, A. Franquet, C. Detavernier, J. P. Rueff, M. Schaekers, S. Van Elshocht, M. Jurczak, Ch. Adelmann, and I. P. Radu, “Metal Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control,” Adv. Funct. Mater. 25(5), 679–686 (2015).
[Crossref]

Marvel, R. E.

Matsui, H.

J. K. Clark, Y. L. Ho, H. Matsui, and J. J. Delaunay, “Optically Pumped Hybrid Plasmonic-Photonic Waveguide Modulator Using the VO2 Metal-Insulator Phase Transition,” IEEE Photonics J. 10(1), 1–9 (2018).
[Crossref]

Maury, F.

S. Kumar, D. Lenoble, F. Maury, and N. Bahlawane, “Synthesis of vanadium oxide films with controlled morphologies: Impact on the metal–insulator transition behavior,” Phys. Status Solidi 212(7), 1582–1587 (2015).
[Crossref]

Meersschaut, J.

A. P. Peter, K. Martens, G. Rampelberg, M. Toeller, J. M. Ablett, J. Meersschaut, D. Cuypers, A. Franquet, C. Detavernier, J. P. Rueff, M. Schaekers, S. Van Elshocht, M. Jurczak, Ch. Adelmann, and I. P. Radu, “Metal Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control,” Adv. Funct. Mater. 25(5), 679–686 (2015).
[Crossref]

Menghini, M.

L. Sánchez, A. Rosa, A. Griol, A. Gutierrez, P. Homm, B. Van Bilzen, M. Menghini, J. P. Locquet, and P. Sanchis, “Impact of the external resistance on the switching power consumption in VO2 nano gap junctions,” Appl. Phys. Lett. 111(3), 031904 (2017).
[Crossref]

B. Van Bilzen, P. Homm, L. Dillemans, C.-Y. Su, M. Menghini, M. Sousa, C. Marchiori, L. Zhang, J. W. Seo, and J.-P. Locquet, “Production of VO2 thin films through post-deposition annealing of V2O3 and VOx films,” Thin Solid Films 591, 143–148 (2015).
[Crossref]

Miller, K. J.

K. J. Miller, K. A. Hallman, R. F. Haglund, and S. M. Weiss, “Silicon waveguide optical switch with embedded phase change material,” Opt. Express 25(22), 26527–26536 (2017).
[Crossref] [PubMed]

P. Markov, R. E. Marvel, H. J. Conley, K. J. Miller, R. F. Haglund, and S. M. Weiss, “Optically monitored electrical switching in VO2,” ACS Photonics 2(8), 1175–1182 (2015).
[Crossref]

Mo, K. S.

B. S. Mun, J. Yoon, K. S. Mo, K. Chen, N. Tamura, C. Dejoie, M. Kunz, Z. Liu, C. Park, K. Moon, and H. Ju, “Role of joule heating effect and bulk-surface phases in voltage-driven metal-insulator transition in VO2 crystal,” Appl. Phys. Lett. 103(6), 061902 (2013).
[Crossref]

Moon, K.

B. S. Mun, J. Yoon, K. S. Mo, K. Chen, N. Tamura, C. Dejoie, M. Kunz, Z. Liu, C. Park, K. Moon, and H. Ju, “Role of joule heating effect and bulk-surface phases in voltage-driven metal-insulator transition in VO2 crystal,” Appl. Phys. Lett. 103(6), 061902 (2013).
[Crossref]

Morineau, R.

G. Guzman, R. Morineau, and J. Livage, “Synthesis of vanadium dioxide thin films from vanadium alkoxides,” Mater. Res. Bull. 29(5), 509–515 (1994).
[Crossref]

Mortier, M.

A. Zimmers, L. Aigouy, M. Mortier, A. Sharoni, S. Wang, K. G. West, J. G. Ramirez, and I. K. Schuller, “Role of thermal heating on the voltage induced insulator-metal transition in VO2.,” Phys. Rev. Lett. 110(5), 056601 (2013).
[Crossref] [PubMed]

Moyer, J. A.

E. Freeman, G. Stone, N. Shukla, H. Paik, J. A. Moyer, Z. Cai, H. Wen, R. E. Herbert, D. G. Schlom, V. Gopalan, and S. Datta, “Nanoscale structural evolution of electrically driven insulator to metal transition in vanadium dioxide,” Appl. Phys. Lett. 103(26), 263109 (2013).
[Crossref]

Mu, J.

Mun, B. S.

J. Yoon, G. Lee, C. Park, B. S. Mun, and H. Ju, “Investigation of length-dependent characteristics of the voltage-induced metal insulator transition in VO2 film devices,” Appl. Phys. Lett. 105(8), 083503 (2014).
[Crossref]

B. S. Mun, J. Yoon, K. S. Mo, K. Chen, N. Tamura, C. Dejoie, M. Kunz, Z. Liu, C. Park, K. Moon, and H. Ju, “Role of joule heating effect and bulk-surface phases in voltage-driven metal-insulator transition in VO2 crystal,” Appl. Phys. Lett. 103(6), 061902 (2013).
[Crossref]

Nag, J.

Narayanamurti, V.

D. Ruzmetov, G. Gopalakrishnan, J. Deng, V. Narayanamurti, and S. Ramanathan, “Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions,” J. Appl. Phys. 106(8), 1–6 (2009).
[Crossref]

Nishi, Y.

S. Kumar, M. D. Pickett, J. P. Strachan, G. Gibson, Y. Nishi, and R. S. Williams, “Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO2.,” Adv. Mater. 25(42), 6128–6132 (2013).
[Crossref] [PubMed]

Oh, J. S.

S. B. Lee, K. Kim, J. S. Oh, B. Kahng, and J. S. Lee, “Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films,” Appl. Phys. Lett. 102(6), 1–6 (2013).
[Crossref]

Orlianges, J. C.

J. Leroy, A. Crunteanu, A. Bessaudou, F. Cosset, C. Champeaux, and J. C. Orlianges, “High-speed metal-insulator transition in vanadium dioxide films induced by an electrical pulsed voltage over nano-gap electrode,” Appl. Phys. Lett. 100(21), 213507 (2012).
[Crossref]

Paik, H.

E. Freeman, G. Stone, N. Shukla, H. Paik, J. A. Moyer, Z. Cai, H. Wen, R. E. Herbert, D. G. Schlom, V. Gopalan, and S. Datta, “Nanoscale structural evolution of electrically driven insulator to metal transition in vanadium dioxide,” Appl. Phys. Lett. 103(26), 263109 (2013).
[Crossref]

Paradis, S.

A. Joushaghani, J. Jeong, S. Paradis, D. Alain, J. Stewart Aitchison, and J. K. S. Poon, “Wavelength-size hybrid Si-VO2 waveguide electroabsorption optical switches and photodetectors,” Opt. Express 23(3), 3657–3668 (2015).
[Crossref] [PubMed]

A. Joushaghani, J. Jeong, S. Paradis, D. Alain, J. Stewart Aitchison, and J. K. S. Poon, “Voltage-controlled switching and thermal effects in VO2 nano-gap junctions,” Appl. Phys. Lett. 104(22), 1–5 (2014).
[Crossref]

Park, C.

J. Yoon, G. Lee, C. Park, B. S. Mun, and H. Ju, “Investigation of length-dependent characteristics of the voltage-induced metal insulator transition in VO2 film devices,” Appl. Phys. Lett. 105(8), 083503 (2014).
[Crossref]

B. S. Mun, J. Yoon, K. S. Mo, K. Chen, N. Tamura, C. Dejoie, M. Kunz, Z. Liu, C. Park, K. Moon, and H. Ju, “Role of joule heating effect and bulk-surface phases in voltage-driven metal-insulator transition in VO2 crystal,” Appl. Phys. Lett. 103(6), 061902 (2013).
[Crossref]

Peter, A. P.

A. P. Peter, K. Martens, G. Rampelberg, M. Toeller, J. M. Ablett, J. Meersschaut, D. Cuypers, A. Franquet, C. Detavernier, J. P. Rueff, M. Schaekers, S. Van Elshocht, M. Jurczak, Ch. Adelmann, and I. P. Radu, “Metal Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control,” Adv. Funct. Mater. 25(5), 679–686 (2015).
[Crossref]

Pickett, M. D.

S. Kumar, M. D. Pickett, J. P. Strachan, G. Gibson, Y. Nishi, and R. S. Williams, “Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO2.,” Adv. Mater. 25(42), 6128–6132 (2013).
[Crossref] [PubMed]

Poon, J. K. S.

A. Joushaghani, J. Jeong, S. Paradis, D. Alain, J. Stewart Aitchison, and J. K. S. Poon, “Wavelength-size hybrid Si-VO2 waveguide electroabsorption optical switches and photodetectors,” Opt. Express 23(3), 3657–3668 (2015).
[Crossref] [PubMed]

A. Joushaghani, J. Jeong, S. Paradis, D. Alain, J. Stewart Aitchison, and J. K. S. Poon, “Voltage-controlled switching and thermal effects in VO2 nano-gap junctions,” Appl. Phys. Lett. 104(22), 1–5 (2014).
[Crossref]

Qazilbash, M. M.

Radu, I. P.

A. P. Peter, K. Martens, G. Rampelberg, M. Toeller, J. M. Ablett, J. Meersschaut, D. Cuypers, A. Franquet, C. Detavernier, J. P. Rueff, M. Schaekers, S. Van Elshocht, M. Jurczak, Ch. Adelmann, and I. P. Radu, “Metal Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control,” Adv. Funct. Mater. 25(5), 679–686 (2015).
[Crossref]

Rahman, B. M. A.

H. Zhang, L. Zhou, B. M. A. Rahman, X. Wu, L. Lu, Y. Xu, J. Xu, J. Song, Z. Hu, L. Xu, and J. Chen, “Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation,” IEEE Photonics J. 10(1), 1–10 (2018).

Ramanathan, S.

M. A. Kats, R. Blanchard, P. Genevet, Z. Yang, M. M. Qazilbash, D. N. Basov, S. Ramanathan, and F. Capasso, “Thermal tuning of mid-infrared plasmonic antenna arrays using a phase change material,” Opt. Lett. 38(3), 368–370 (2013).
[Crossref] [PubMed]

Z. Yang, S. Hart, C. Ko, A. Yacoby, and S. Ramanathan, “Studies on electric triggering of the metal-insulator transition in VO2 thin films between 77 K and 300 K,” J. Appl. Phys. 110(3), 033725 (2011).
[Crossref]

Z. Yang, C. Ko, and S. Ramanathan, “Oxide electronics utilizing ultrafast metal-insulator transitions,” Annu. Rev. Mater. Res. 41(1), 337–367 (2011).
[Crossref]

G. Seo, B. J. Kim, C. Ko, Y. Cui, Y. W. Lee, J. H. Shin, S. Ramanathan, and H. T. Kim, “Voltage-pulse induced switching dynamics in VO2 thin films devices on silicon,” IEEE Electron. Dev. Lett. 32(11), 1582–1584 (2011).
[Crossref]

D. Ruzmetov, G. Gopalakrishnan, J. Deng, V. Narayanamurti, and S. Ramanathan, “Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions,” J. Appl. Phys. 106(8), 1–6 (2009).
[Crossref]

G. Gopalakrishnan, D. Ruzmetov, and S. Ramanathan, “On the triggering mechanism for the metal–insulator transition in thin film VO2 devices: electric field versus thermal effects,” J. Mater. Sci. 44(19), 5345–5353 (2009).
[Crossref]

C. Ko and S. Ramanathan, “Observation of electric field assisted phase transition in thin film vanadium oxide in a metal oxide semiconductor device geometry,” Appl. Phys. Lett. 93(25), 1–4 (2008).

Ramirez, J. G.

A. Zimmers, L. Aigouy, M. Mortier, A. Sharoni, S. Wang, K. G. West, J. G. Ramirez, and I. K. Schuller, “Role of thermal heating on the voltage induced insulator-metal transition in VO2.,” Phys. Rev. Lett. 110(5), 056601 (2013).
[Crossref] [PubMed]

Ramírez, J. G.

E. Abreu, S. N. Gilbert Corder, S. Jin Yun, S. Wang, J. G. Ramírez, K. West, J. Zhang, S. Kittiwatanakul, I. K. Schuller, J. Lu, S. A. Wolf, H.-T. Kim, M. Liu, and R. D. Averitt, “Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films,” Phys. Rev. B 96(9), 094309 (2017).
[Crossref]

Rampelberg, G.

A. P. Peter, K. Martens, G. Rampelberg, M. Toeller, J. M. Ablett, J. Meersschaut, D. Cuypers, A. Franquet, C. Detavernier, J. P. Rueff, M. Schaekers, S. Van Elshocht, M. Jurczak, Ch. Adelmann, and I. P. Radu, “Metal Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control,” Adv. Funct. Mater. 25(5), 679–686 (2015).
[Crossref]

Rosa, A.

L. Sánchez, A. Rosa, A. Griol, A. Gutierrez, P. Homm, B. Van Bilzen, M. Menghini, J. P. Locquet, and P. Sanchis, “Impact of the external resistance on the switching power consumption in VO2 nano gap junctions,” Appl. Phys. Lett. 111(3), 031904 (2017).
[Crossref]

L. Sánchez, F. C. Juan, A. Rosa, and P. Sanchis, “Ultra-compact electro-absorption VO2–Si modulator with TM to TE conversion,” J. Opt. 19(3), 035401 (2017).
[Crossref]

Rosa, Á.

Rosca, T.

W. A. Vitale, E. A. Casu, A. Biswas, T. Rosca, C. Alper, A. Krammer, G. V. Luong, Q. T. Zhao, S. Mantl, A. Schüler, and A. M. Ionescu, “A steep-slope transistor combining phase-change and band-to-band-tunneling to achieve a sub-unity body factor,” Sci. Rep. 7(1), 355–365 (2017).
[Crossref] [PubMed]

Rueff, J. P.

A. P. Peter, K. Martens, G. Rampelberg, M. Toeller, J. M. Ablett, J. Meersschaut, D. Cuypers, A. Franquet, C. Detavernier, J. P. Rueff, M. Schaekers, S. Van Elshocht, M. Jurczak, Ch. Adelmann, and I. P. Radu, “Metal Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control,” Adv. Funct. Mater. 25(5), 679–686 (2015).
[Crossref]

Ruzmetov, D.

D. Ruzmetov, G. Gopalakrishnan, J. Deng, V. Narayanamurti, and S. Ramanathan, “Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions,” J. Appl. Phys. 106(8), 1–6 (2009).
[Crossref]

G. Gopalakrishnan, D. Ruzmetov, and S. Ramanathan, “On the triggering mechanism for the metal–insulator transition in thin film VO2 devices: electric field versus thermal effects,” J. Mater. Sci. 44(19), 5345–5353 (2009).
[Crossref]

Ryckman, J. D.

Sanchez, L.

L. Sanchez, S. Lechago, A. Gutierrez, and P. Sanchis, “Analysis and Design Optimization of a Hybrid VO2/Silicon 2x2 Microring Switch,” IEEE Photonics J. 8(2), 1–9 (2016).
[Crossref]

Sánchez, L.

L. Sánchez, F. C. Juan, A. Rosa, and P. Sanchis, “Ultra-compact electro-absorption VO2–Si modulator with TM to TE conversion,” J. Opt. 19(3), 035401 (2017).
[Crossref]

L. Sánchez, A. Rosa, A. Griol, A. Gutierrez, P. Homm, B. Van Bilzen, M. Menghini, J. P. Locquet, and P. Sanchis, “Impact of the external resistance on the switching power consumption in VO2 nano gap junctions,” Appl. Phys. Lett. 111(3), 031904 (2017).
[Crossref]

L. Sánchez, S. Lechago, and P. Sanchis, “Ultra-compact TE and TM pass polarizers based on vanadium dioxide on silicon,” Opt. Lett. 40(7), 1452–1455 (2015).
[Crossref] [PubMed]

Sanchis, P.

L. Sánchez, F. C. Juan, A. Rosa, and P. Sanchis, “Ultra-compact electro-absorption VO2–Si modulator with TM to TE conversion,” J. Opt. 19(3), 035401 (2017).
[Crossref]

L. Sánchez, A. Rosa, A. Griol, A. Gutierrez, P. Homm, B. Van Bilzen, M. Menghini, J. P. Locquet, and P. Sanchis, “Impact of the external resistance on the switching power consumption in VO2 nano gap junctions,” Appl. Phys. Lett. 111(3), 031904 (2017).
[Crossref]

L. Sanchez, S. Lechago, A. Gutierrez, and P. Sanchis, “Analysis and Design Optimization of a Hybrid VO2/Silicon 2x2 Microring Switch,” IEEE Photonics J. 8(2), 1–9 (2016).
[Crossref]

Á. Rosa, A. Gutiérrez, A. Brimont, A. Griol, and P. Sanchis, “High performace silicon 2x2 optical switch based on a thermo-optically tunable multimode interference coupler and efficient electrodes,” Opt. Express 24(1), 191–198 (2016).
[Crossref] [PubMed]

L. Sánchez, S. Lechago, and P. Sanchis, “Ultra-compact TE and TM pass polarizers based on vanadium dioxide on silicon,” Opt. Lett. 40(7), 1452–1455 (2015).
[Crossref] [PubMed]

Schaekers, M.

A. P. Peter, K. Martens, G. Rampelberg, M. Toeller, J. M. Ablett, J. Meersschaut, D. Cuypers, A. Franquet, C. Detavernier, J. P. Rueff, M. Schaekers, S. Van Elshocht, M. Jurczak, Ch. Adelmann, and I. P. Radu, “Metal Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control,” Adv. Funct. Mater. 25(5), 679–686 (2015).
[Crossref]

Schlom, D. G.

E. Freeman, G. Stone, N. Shukla, H. Paik, J. A. Moyer, Z. Cai, H. Wen, R. E. Herbert, D. G. Schlom, V. Gopalan, and S. Datta, “Nanoscale structural evolution of electrically driven insulator to metal transition in vanadium dioxide,” Appl. Phys. Lett. 103(26), 263109 (2013).
[Crossref]

Schüler, A.

W. A. Vitale, E. A. Casu, A. Biswas, T. Rosca, C. Alper, A. Krammer, G. V. Luong, Q. T. Zhao, S. Mantl, A. Schüler, and A. M. Ionescu, “A steep-slope transistor combining phase-change and band-to-band-tunneling to achieve a sub-unity body factor,” Sci. Rep. 7(1), 355–365 (2017).
[Crossref] [PubMed]

Schuller, I. K.

E. Abreu, S. N. Gilbert Corder, S. Jin Yun, S. Wang, J. G. Ramírez, K. West, J. Zhang, S. Kittiwatanakul, I. K. Schuller, J. Lu, S. A. Wolf, H.-T. Kim, M. Liu, and R. D. Averitt, “Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films,” Phys. Rev. B 96(9), 094309 (2017).
[Crossref]

A. Zimmers, L. Aigouy, M. Mortier, A. Sharoni, S. Wang, K. G. West, J. G. Ramirez, and I. K. Schuller, “Role of thermal heating on the voltage induced insulator-metal transition in VO2.,” Phys. Rev. Lett. 110(5), 056601 (2013).
[Crossref] [PubMed]

Seo, G.

G. Seo, B. J. Kim, C. Ko, Y. Cui, Y. W. Lee, J. H. Shin, S. Ramanathan, and H. T. Kim, “Voltage-pulse induced switching dynamics in VO2 thin films devices on silicon,” IEEE Electron. Dev. Lett. 32(11), 1582–1584 (2011).
[Crossref]

Seo, J. W.

B. Van Bilzen, P. Homm, L. Dillemans, C.-Y. Su, M. Menghini, M. Sousa, C. Marchiori, L. Zhang, J. W. Seo, and J.-P. Locquet, “Production of VO2 thin films through post-deposition annealing of V2O3 and VOx films,” Thin Solid Films 591, 143–148 (2015).
[Crossref]

Sharoni, A.

A. Zimmers, L. Aigouy, M. Mortier, A. Sharoni, S. Wang, K. G. West, J. G. Ramirez, and I. K. Schuller, “Role of thermal heating on the voltage induced insulator-metal transition in VO2.,” Phys. Rev. Lett. 110(5), 056601 (2013).
[Crossref] [PubMed]

Shi, S.

X. Xu, X. He, H. Wang, Q. Gu, S. Shi, H. Xing, Ch. Wang, J. Zhang, X. Chen, and J. Chu, “The extremely narrow hysteresis width of phase transition in nanocrystalline VO2 thin films with the flake grain structures,” Appl. Surf. Sci. 261, 83–87 (2012).
[Crossref]

Shieh, W.

M. Sun, W. Shieh, and R. R. Unnithan, “Design of Plasmonic Modulators with Vanadium Dioxide on Silicon-on-Insulator,” IEEE Photonics J. 9(3), 1–10 (2017).
[Crossref]

Shin, J. H.

G. Seo, B. J. Kim, C. Ko, Y. Cui, Y. W. Lee, J. H. Shin, S. Ramanathan, and H. T. Kim, “Voltage-pulse induced switching dynamics in VO2 thin films devices on silicon,” IEEE Electron. Dev. Lett. 32(11), 1582–1584 (2011).
[Crossref]

Shukla, N.

E. Freeman, G. Stone, N. Shukla, H. Paik, J. A. Moyer, Z. Cai, H. Wen, R. E. Herbert, D. G. Schlom, V. Gopalan, and S. Datta, “Nanoscale structural evolution of electrically driven insulator to metal transition in vanadium dioxide,” Appl. Phys. Lett. 103(26), 263109 (2013).
[Crossref]

Song, J.

H. Zhang, L. Zhou, B. M. A. Rahman, X. Wu, L. Lu, Y. Xu, J. Xu, J. Song, Z. Hu, L. Xu, and J. Chen, “Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation,” IEEE Photonics J. 10(1), 1–10 (2018).

Soref, R.

Sorger, V. J.

V. J. Sorger, N. D. Lanzillotti-Kimura, R. M. Ma, and X. Zhang, “Ultra-compact silicon nanophotonic modulator with broadband response,” Nanophotonics 1(1), 17–22 (2012).
[Crossref]

Sousa, M.

B. Van Bilzen, P. Homm, L. Dillemans, C.-Y. Su, M. Menghini, M. Sousa, C. Marchiori, L. Zhang, J. W. Seo, and J.-P. Locquet, “Production of VO2 thin films through post-deposition annealing of V2O3 and VOx films,” Thin Solid Films 591, 143–148 (2015).
[Crossref]

Stewart Aitchison, J.

A. Joushaghani, J. Jeong, S. Paradis, D. Alain, J. Stewart Aitchison, and J. K. S. Poon, “Wavelength-size hybrid Si-VO2 waveguide electroabsorption optical switches and photodetectors,” Opt. Express 23(3), 3657–3668 (2015).
[Crossref] [PubMed]

A. Joushaghani, J. Jeong, S. Paradis, D. Alain, J. Stewart Aitchison, and J. K. S. Poon, “Voltage-controlled switching and thermal effects in VO2 nano-gap junctions,” Appl. Phys. Lett. 104(22), 1–5 (2014).
[Crossref]

Stone, G.

E. Freeman, G. Stone, N. Shukla, H. Paik, J. A. Moyer, Z. Cai, H. Wen, R. E. Herbert, D. G. Schlom, V. Gopalan, and S. Datta, “Nanoscale structural evolution of electrically driven insulator to metal transition in vanadium dioxide,” Appl. Phys. Lett. 103(26), 263109 (2013).
[Crossref]

Strachan, J. P.

S. Kumar, M. D. Pickett, J. P. Strachan, G. Gibson, Y. Nishi, and R. S. Williams, “Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO2.,” Adv. Mater. 25(42), 6128–6132 (2013).
[Crossref] [PubMed]

Su, C.-Y.

B. Van Bilzen, P. Homm, L. Dillemans, C.-Y. Su, M. Menghini, M. Sousa, C. Marchiori, L. Zhang, J. W. Seo, and J.-P. Locquet, “Production of VO2 thin films through post-deposition annealing of V2O3 and VOx films,” Thin Solid Films 591, 143–148 (2015).
[Crossref]

Sun, M.

M. Sun, W. Shieh, and R. R. Unnithan, “Design of Plasmonic Modulators with Vanadium Dioxide on Silicon-on-Insulator,” IEEE Photonics J. 9(3), 1–10 (2017).
[Crossref]

Tamura, N.

B. S. Mun, J. Yoon, K. S. Mo, K. Chen, N. Tamura, C. Dejoie, M. Kunz, Z. Liu, C. Park, K. Moon, and H. Ju, “Role of joule heating effect and bulk-surface phases in voltage-driven metal-insulator transition in VO2 crystal,” Appl. Phys. Lett. 103(6), 061902 (2013).
[Crossref]

Toeller, M.

A. P. Peter, K. Martens, G. Rampelberg, M. Toeller, J. M. Ablett, J. Meersschaut, D. Cuypers, A. Franquet, C. Detavernier, J. P. Rueff, M. Schaekers, S. Van Elshocht, M. Jurczak, Ch. Adelmann, and I. P. Radu, “Metal Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control,” Adv. Funct. Mater. 25(5), 679–686 (2015).
[Crossref]

Unnithan, R. R.

M. Sun, W. Shieh, and R. R. Unnithan, “Design of Plasmonic Modulators with Vanadium Dioxide on Silicon-on-Insulator,” IEEE Photonics J. 9(3), 1–10 (2017).
[Crossref]

Van Bilzen, B.

L. Sánchez, A. Rosa, A. Griol, A. Gutierrez, P. Homm, B. Van Bilzen, M. Menghini, J. P. Locquet, and P. Sanchis, “Impact of the external resistance on the switching power consumption in VO2 nano gap junctions,” Appl. Phys. Lett. 111(3), 031904 (2017).
[Crossref]

B. Van Bilzen, P. Homm, L. Dillemans, C.-Y. Su, M. Menghini, M. Sousa, C. Marchiori, L. Zhang, J. W. Seo, and J.-P. Locquet, “Production of VO2 thin films through post-deposition annealing of V2O3 and VOx films,” Thin Solid Films 591, 143–148 (2015).
[Crossref]

Van Elshocht, S.

A. P. Peter, K. Martens, G. Rampelberg, M. Toeller, J. M. Ablett, J. Meersschaut, D. Cuypers, A. Franquet, C. Detavernier, J. P. Rueff, M. Schaekers, S. Van Elshocht, M. Jurczak, Ch. Adelmann, and I. P. Radu, “Metal Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control,” Adv. Funct. Mater. 25(5), 679–686 (2015).
[Crossref]

Vitale, W. A.

W. A. Vitale, E. A. Casu, A. Biswas, T. Rosca, C. Alper, A. Krammer, G. V. Luong, Q. T. Zhao, S. Mantl, A. Schüler, and A. M. Ionescu, “A steep-slope transistor combining phase-change and band-to-band-tunneling to achieve a sub-unity body factor,” Sci. Rep. 7(1), 355–365 (2017).
[Crossref] [PubMed]

Wang, C. M.

W. Gao, C. M. Wang, H. Q. Wang, V. E. Henrich, and E. I. Altman, “Growth and surface structure of vanadium oxide on anatase,” Surf. Sci. 559(2–3), 201–213 (2004).
[Crossref]

Wang, Ch.

X. Xu, X. He, H. Wang, Q. Gu, S. Shi, H. Xing, Ch. Wang, J. Zhang, X. Chen, and J. Chu, “The extremely narrow hysteresis width of phase transition in nanocrystalline VO2 thin films with the flake grain structures,” Appl. Surf. Sci. 261, 83–87 (2012).
[Crossref]

Wang, H.

X. Xu, X. He, H. Wang, Q. Gu, S. Shi, H. Xing, Ch. Wang, J. Zhang, X. Chen, and J. Chu, “The extremely narrow hysteresis width of phase transition in nanocrystalline VO2 thin films with the flake grain structures,” Appl. Surf. Sci. 261, 83–87 (2012).
[Crossref]

Wang, H. Q.

W. Gao, C. M. Wang, H. Q. Wang, V. E. Henrich, and E. I. Altman, “Growth and surface structure of vanadium oxide on anatase,” Surf. Sci. 559(2–3), 201–213 (2004).
[Crossref]

Wang, S.

E. Abreu, S. N. Gilbert Corder, S. Jin Yun, S. Wang, J. G. Ramírez, K. West, J. Zhang, S. Kittiwatanakul, I. K. Schuller, J. Lu, S. A. Wolf, H.-T. Kim, M. Liu, and R. D. Averitt, “Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films,” Phys. Rev. B 96(9), 094309 (2017).
[Crossref]

A. Zimmers, L. Aigouy, M. Mortier, A. Sharoni, S. Wang, K. G. West, J. G. Ramirez, and I. K. Schuller, “Role of thermal heating on the voltage induced insulator-metal transition in VO2.,” Phys. Rev. Lett. 110(5), 056601 (2013).
[Crossref] [PubMed]

Weiss, S. M.

Wen, H.

E. Freeman, G. Stone, N. Shukla, H. Paik, J. A. Moyer, Z. Cai, H. Wen, R. E. Herbert, D. G. Schlom, V. Gopalan, and S. Datta, “Nanoscale structural evolution of electrically driven insulator to metal transition in vanadium dioxide,” Appl. Phys. Lett. 103(26), 263109 (2013).
[Crossref]

West, K.

E. Abreu, S. N. Gilbert Corder, S. Jin Yun, S. Wang, J. G. Ramírez, K. West, J. Zhang, S. Kittiwatanakul, I. K. Schuller, J. Lu, S. A. Wolf, H.-T. Kim, M. Liu, and R. D. Averitt, “Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films,” Phys. Rev. B 96(9), 094309 (2017).
[Crossref]

West, K. G.

A. Zimmers, L. Aigouy, M. Mortier, A. Sharoni, S. Wang, K. G. West, J. G. Ramirez, and I. K. Schuller, “Role of thermal heating on the voltage induced insulator-metal transition in VO2.,” Phys. Rev. Lett. 110(5), 056601 (2013).
[Crossref] [PubMed]

Williams, R. S.

S. Kumar, M. D. Pickett, J. P. Strachan, G. Gibson, Y. Nishi, and R. S. Williams, “Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO2.,” Adv. Mater. 25(42), 6128–6132 (2013).
[Crossref] [PubMed]

Wolf, S. A.

E. Abreu, S. N. Gilbert Corder, S. Jin Yun, S. Wang, J. G. Ramírez, K. West, J. Zhang, S. Kittiwatanakul, I. K. Schuller, J. Lu, S. A. Wolf, H.-T. Kim, M. Liu, and R. D. Averitt, “Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films,” Phys. Rev. B 96(9), 094309 (2017).
[Crossref]

Wu, X.

H. Zhang, L. Zhou, B. M. A. Rahman, X. Wu, L. Lu, Y. Xu, J. Xu, J. Song, Z. Hu, L. Xu, and J. Chen, “Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation,” IEEE Photonics J. 10(1), 1–10 (2018).

Xing, H.

X. Xu, X. He, H. Wang, Q. Gu, S. Shi, H. Xing, Ch. Wang, J. Zhang, X. Chen, and J. Chu, “The extremely narrow hysteresis width of phase transition in nanocrystalline VO2 thin films with the flake grain structures,” Appl. Surf. Sci. 261, 83–87 (2012).
[Crossref]

Xu, J.

H. Zhang, L. Zhou, B. M. A. Rahman, X. Wu, L. Lu, Y. Xu, J. Xu, J. Song, Z. Hu, L. Xu, and J. Chen, “Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation,” IEEE Photonics J. 10(1), 1–10 (2018).

Xu, L.

H. Zhang, L. Zhou, B. M. A. Rahman, X. Wu, L. Lu, Y. Xu, J. Xu, J. Song, Z. Hu, L. Xu, and J. Chen, “Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation,” IEEE Photonics J. 10(1), 1–10 (2018).

Xu, X.

X. Xu, X. He, H. Wang, Q. Gu, S. Shi, H. Xing, Ch. Wang, J. Zhang, X. Chen, and J. Chu, “The extremely narrow hysteresis width of phase transition in nanocrystalline VO2 thin films with the flake grain structures,” Appl. Surf. Sci. 261, 83–87 (2012).
[Crossref]

Xu, Y.

H. Zhang, L. Zhou, B. M. A. Rahman, X. Wu, L. Lu, Y. Xu, J. Xu, J. Song, Z. Hu, L. Xu, and J. Chen, “Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation,” IEEE Photonics J. 10(1), 1–10 (2018).

Yacoby, A.

Z. Yang, S. Hart, C. Ko, A. Yacoby, and S. Ramanathan, “Studies on electric triggering of the metal-insulator transition in VO2 thin films between 77 K and 300 K,” J. Appl. Phys. 110(3), 033725 (2011).
[Crossref]

Yang, Z.

M. A. Kats, R. Blanchard, P. Genevet, Z. Yang, M. M. Qazilbash, D. N. Basov, S. Ramanathan, and F. Capasso, “Thermal tuning of mid-infrared plasmonic antenna arrays using a phase change material,” Opt. Lett. 38(3), 368–370 (2013).
[Crossref] [PubMed]

Z. Yang, S. Hart, C. Ko, A. Yacoby, and S. Ramanathan, “Studies on electric triggering of the metal-insulator transition in VO2 thin films between 77 K and 300 K,” J. Appl. Phys. 110(3), 033725 (2011).
[Crossref]

Z. Yang, C. Ko, and S. Ramanathan, “Oxide electronics utilizing ultrafast metal-insulator transitions,” Annu. Rev. Mater. Res. 41(1), 337–367 (2011).
[Crossref]

Yoon, J.

J. Yoon, G. Lee, C. Park, B. S. Mun, and H. Ju, “Investigation of length-dependent characteristics of the voltage-induced metal insulator transition in VO2 film devices,” Appl. Phys. Lett. 105(8), 083503 (2014).
[Crossref]

B. S. Mun, J. Yoon, K. S. Mo, K. Chen, N. Tamura, C. Dejoie, M. Kunz, Z. Liu, C. Park, K. Moon, and H. Ju, “Role of joule heating effect and bulk-surface phases in voltage-driven metal-insulator transition in VO2 crystal,” Appl. Phys. Lett. 103(6), 061902 (2013).
[Crossref]

Youn, D. H.

B. G. Chae, H. T. Kim, D. H. Youn, and K. Y. Kang, “Abrupt metal–insulator transition observed in VO2 thin films induced by a switching voltage pulse,” Phys. B Condens. Matter 369(1–4), 76–80 (2005).

Zhang, H.

H. Zhang, L. Zhou, B. M. A. Rahman, X. Wu, L. Lu, Y. Xu, J. Xu, J. Song, Z. Hu, L. Xu, and J. Chen, “Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation,” IEEE Photonics J. 10(1), 1–10 (2018).

Zhang, J.

E. Abreu, S. N. Gilbert Corder, S. Jin Yun, S. Wang, J. G. Ramírez, K. West, J. Zhang, S. Kittiwatanakul, I. K. Schuller, J. Lu, S. A. Wolf, H.-T. Kim, M. Liu, and R. D. Averitt, “Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films,” Phys. Rev. B 96(9), 094309 (2017).
[Crossref]

X. Xu, X. He, H. Wang, Q. Gu, S. Shi, H. Xing, Ch. Wang, J. Zhang, X. Chen, and J. Chu, “The extremely narrow hysteresis width of phase transition in nanocrystalline VO2 thin films with the flake grain structures,” Appl. Surf. Sci. 261, 83–87 (2012).
[Crossref]

Zhang, L.

B. Van Bilzen, P. Homm, L. Dillemans, C.-Y. Su, M. Menghini, M. Sousa, C. Marchiori, L. Zhang, J. W. Seo, and J.-P. Locquet, “Production of VO2 thin films through post-deposition annealing of V2O3 and VOx films,” Thin Solid Films 591, 143–148 (2015).
[Crossref]

Zhang, X.

V. J. Sorger, N. D. Lanzillotti-Kimura, R. M. Ma, and X. Zhang, “Ultra-compact silicon nanophotonic modulator with broadband response,” Nanophotonics 1(1), 17–22 (2012).
[Crossref]

Zhao, Q. T.

W. A. Vitale, E. A. Casu, A. Biswas, T. Rosca, C. Alper, A. Krammer, G. V. Luong, Q. T. Zhao, S. Mantl, A. Schüler, and A. M. Ionescu, “A steep-slope transistor combining phase-change and band-to-band-tunneling to achieve a sub-unity body factor,” Sci. Rep. 7(1), 355–365 (2017).
[Crossref] [PubMed]

Zhou, L.

H. Zhang, L. Zhou, B. M. A. Rahman, X. Wu, L. Lu, Y. Xu, J. Xu, J. Song, Z. Hu, L. Xu, and J. Chen, “Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation,” IEEE Photonics J. 10(1), 1–10 (2018).

Zimmers, A.

A. Zimmers, L. Aigouy, M. Mortier, A. Sharoni, S. Wang, K. G. West, J. G. Ramirez, and I. K. Schuller, “Role of thermal heating on the voltage induced insulator-metal transition in VO2.,” Phys. Rev. Lett. 110(5), 056601 (2013).
[Crossref] [PubMed]

ACS Photonics (1)

P. Markov, R. E. Marvel, H. J. Conley, K. J. Miller, R. F. Haglund, and S. M. Weiss, “Optically monitored electrical switching in VO2,” ACS Photonics 2(8), 1175–1182 (2015).
[Crossref]

Adv. Funct. Mater. (1)

A. P. Peter, K. Martens, G. Rampelberg, M. Toeller, J. M. Ablett, J. Meersschaut, D. Cuypers, A. Franquet, C. Detavernier, J. P. Rueff, M. Schaekers, S. Van Elshocht, M. Jurczak, Ch. Adelmann, and I. P. Radu, “Metal Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control,” Adv. Funct. Mater. 25(5), 679–686 (2015).
[Crossref]

Adv. Mater. (1)

S. Kumar, M. D. Pickett, J. P. Strachan, G. Gibson, Y. Nishi, and R. S. Williams, “Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO2.,” Adv. Mater. 25(42), 6128–6132 (2013).
[Crossref] [PubMed]

Annu. Rev. Mater. Res. (1)

Z. Yang, C. Ko, and S. Ramanathan, “Oxide electronics utilizing ultrafast metal-insulator transitions,” Annu. Rev. Mater. Res. 41(1), 337–367 (2011).
[Crossref]

Appl. Phys. Lett. (8)

C. Ko and S. Ramanathan, “Observation of electric field assisted phase transition in thin film vanadium oxide in a metal oxide semiconductor device geometry,” Appl. Phys. Lett. 93(25), 1–4 (2008).

S. B. Lee, K. Kim, J. S. Oh, B. Kahng, and J. S. Lee, “Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films,” Appl. Phys. Lett. 102(6), 1–6 (2013).
[Crossref]

A. Joushaghani, J. Jeong, S. Paradis, D. Alain, J. Stewart Aitchison, and J. K. S. Poon, “Voltage-controlled switching and thermal effects in VO2 nano-gap junctions,” Appl. Phys. Lett. 104(22), 1–5 (2014).
[Crossref]

J. Yoon, G. Lee, C. Park, B. S. Mun, and H. Ju, “Investigation of length-dependent characteristics of the voltage-induced metal insulator transition in VO2 film devices,” Appl. Phys. Lett. 105(8), 083503 (2014).
[Crossref]

L. Sánchez, A. Rosa, A. Griol, A. Gutierrez, P. Homm, B. Van Bilzen, M. Menghini, J. P. Locquet, and P. Sanchis, “Impact of the external resistance on the switching power consumption in VO2 nano gap junctions,” Appl. Phys. Lett. 111(3), 031904 (2017).
[Crossref]

B. S. Mun, J. Yoon, K. S. Mo, K. Chen, N. Tamura, C. Dejoie, M. Kunz, Z. Liu, C. Park, K. Moon, and H. Ju, “Role of joule heating effect and bulk-surface phases in voltage-driven metal-insulator transition in VO2 crystal,” Appl. Phys. Lett. 103(6), 061902 (2013).
[Crossref]

E. Freeman, G. Stone, N. Shukla, H. Paik, J. A. Moyer, Z. Cai, H. Wen, R. E. Herbert, D. G. Schlom, V. Gopalan, and S. Datta, “Nanoscale structural evolution of electrically driven insulator to metal transition in vanadium dioxide,” Appl. Phys. Lett. 103(26), 263109 (2013).
[Crossref]

J. Leroy, A. Crunteanu, A. Bessaudou, F. Cosset, C. Champeaux, and J. C. Orlianges, “High-speed metal-insulator transition in vanadium dioxide films induced by an electrical pulsed voltage over nano-gap electrode,” Appl. Phys. Lett. 100(21), 213507 (2012).
[Crossref]

Appl. Surf. Sci. (1)

X. Xu, X. He, H. Wang, Q. Gu, S. Shi, H. Xing, Ch. Wang, J. Zhang, X. Chen, and J. Chu, “The extremely narrow hysteresis width of phase transition in nanocrystalline VO2 thin films with the flake grain structures,” Appl. Surf. Sci. 261, 83–87 (2012).
[Crossref]

IEEE Electron. Dev. Lett. (1)

G. Seo, B. J. Kim, C. Ko, Y. Cui, Y. W. Lee, J. H. Shin, S. Ramanathan, and H. T. Kim, “Voltage-pulse induced switching dynamics in VO2 thin films devices on silicon,” IEEE Electron. Dev. Lett. 32(11), 1582–1584 (2011).
[Crossref]

IEEE Photonics J. (4)

H. Zhang, L. Zhou, B. M. A. Rahman, X. Wu, L. Lu, Y. Xu, J. Xu, J. Song, Z. Hu, L. Xu, and J. Chen, “Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation,” IEEE Photonics J. 10(1), 1–10 (2018).

L. Sanchez, S. Lechago, A. Gutierrez, and P. Sanchis, “Analysis and Design Optimization of a Hybrid VO2/Silicon 2x2 Microring Switch,” IEEE Photonics J. 8(2), 1–9 (2016).
[Crossref]

M. Sun, W. Shieh, and R. R. Unnithan, “Design of Plasmonic Modulators with Vanadium Dioxide on Silicon-on-Insulator,” IEEE Photonics J. 9(3), 1–10 (2017).
[Crossref]

J. K. Clark, Y. L. Ho, H. Matsui, and J. J. Delaunay, “Optically Pumped Hybrid Plasmonic-Photonic Waveguide Modulator Using the VO2 Metal-Insulator Phase Transition,” IEEE Photonics J. 10(1), 1–9 (2018).
[Crossref]

J. Appl. Phys. (2)

Z. Yang, S. Hart, C. Ko, A. Yacoby, and S. Ramanathan, “Studies on electric triggering of the metal-insulator transition in VO2 thin films between 77 K and 300 K,” J. Appl. Phys. 110(3), 033725 (2011).
[Crossref]

D. Ruzmetov, G. Gopalakrishnan, J. Deng, V. Narayanamurti, and S. Ramanathan, “Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions,” J. Appl. Phys. 106(8), 1–6 (2009).
[Crossref]

J. Lightwave Technol. (1)

J. Mater. Sci. (1)

G. Gopalakrishnan, D. Ruzmetov, and S. Ramanathan, “On the triggering mechanism for the metal–insulator transition in thin film VO2 devices: electric field versus thermal effects,” J. Mater. Sci. 44(19), 5345–5353 (2009).
[Crossref]

J. Opt. (1)

L. Sánchez, F. C. Juan, A. Rosa, and P. Sanchis, “Ultra-compact electro-absorption VO2–Si modulator with TM to TE conversion,” J. Opt. 19(3), 035401 (2017).
[Crossref]

Mater. Res. Bull. (1)

G. Guzman, R. Morineau, and J. Livage, “Synthesis of vanadium dioxide thin films from vanadium alkoxides,” Mater. Res. Bull. 29(5), 509–515 (1994).
[Crossref]

Nanophotonics (1)

V. J. Sorger, N. D. Lanzillotti-Kimura, R. M. Ma, and X. Zhang, “Ultra-compact silicon nanophotonic modulator with broadband response,” Nanophotonics 1(1), 17–22 (2012).
[Crossref]

Opt. Express (5)

Opt. Lett. (2)

Phys. B Condens. Matter (1)

B. G. Chae, H. T. Kim, D. H. Youn, and K. Y. Kang, “Abrupt metal–insulator transition observed in VO2 thin films induced by a switching voltage pulse,” Phys. B Condens. Matter 369(1–4), 76–80 (2005).

Phys. Rev. B (1)

E. Abreu, S. N. Gilbert Corder, S. Jin Yun, S. Wang, J. G. Ramírez, K. West, J. Zhang, S. Kittiwatanakul, I. K. Schuller, J. Lu, S. A. Wolf, H.-T. Kim, M. Liu, and R. D. Averitt, “Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films,” Phys. Rev. B 96(9), 094309 (2017).
[Crossref]

Phys. Rev. Lett. (1)

A. Zimmers, L. Aigouy, M. Mortier, A. Sharoni, S. Wang, K. G. West, J. G. Ramirez, and I. K. Schuller, “Role of thermal heating on the voltage induced insulator-metal transition in VO2.,” Phys. Rev. Lett. 110(5), 056601 (2013).
[Crossref] [PubMed]

Phys. Status Solidi (1)

S. Kumar, D. Lenoble, F. Maury, and N. Bahlawane, “Synthesis of vanadium oxide films with controlled morphologies: Impact on the metal–insulator transition behavior,” Phys. Status Solidi 212(7), 1582–1587 (2015).
[Crossref]

Sci. Rep. (1)

W. A. Vitale, E. A. Casu, A. Biswas, T. Rosca, C. Alper, A. Krammer, G. V. Luong, Q. T. Zhao, S. Mantl, A. Schüler, and A. M. Ionescu, “A steep-slope transistor combining phase-change and band-to-band-tunneling to achieve a sub-unity body factor,” Sci. Rep. 7(1), 355–365 (2017).
[Crossref] [PubMed]

Surf. Sci. (1)

W. Gao, C. M. Wang, H. Q. Wang, V. E. Henrich, and E. I. Altman, “Growth and surface structure of vanadium oxide on anatase,” Surf. Sci. 559(2–3), 201–213 (2004).
[Crossref]

Thin Solid Films (1)

B. Van Bilzen, P. Homm, L. Dillemans, C.-Y. Su, M. Menghini, M. Sousa, C. Marchiori, L. Zhang, J. W. Seo, and J.-P. Locquet, “Production of VO2 thin films through post-deposition annealing of V2O3 and VOx films,” Thin Solid Films 591, 143–148 (2015).
[Crossref]

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (7)

Fig. 1
Fig. 1 Concept art of the hybrid VO2/Si waveguide with a lateral Ti microheater based on a double metallization process. The inset shows the cross section of the hybrid VO2/Si waveguide. The silicon waveguide has a width of 480 nm and a thickness of 220 nm. The inset shows the spacer between the silicon waveguide and the VO2 layer that is made of a 10 nm-thick oxide layer plus a 50 nm-thick nitride (SiN) hardmask. The SiN layer is needed for planarization and protection of the silicon surface.
Fig. 2
Fig. 2 (a) SEM image of the hybrid VO2/Si waveguide with a lateral microheater. The silicon waveguide contour has been outlined and the VO2 region has been highlighted with a false color for clarity. Zoom over the hybrid VO2/Si area of two different waveguides with (b) homogenous and (c) granular VO2 layer.
Fig. 3
Fig. 3 Electrical resistivity of the (a) homogenous and (b) granular VO2 layers as a function of temperature after ex-situ annealing. The one order of magnitude change in resistivity as the temperature increases, indicating an IMT at 70°C, confirms the transformation to VO2 in both samples.
Fig. 4
Fig. 4 Variation of optical power as a function of the applied electrical power for TE polarization in the hybrid VO2/Si waveguide with (a) homogeneous and (b) granular VO2.
Fig. 5
Fig. 5 Variation of optical power as a function of the applied electrical power for TM polarization in the hybrid VO2/Si waveguide with (a) homogeneous and (b) granular VO2.
Fig. 6
Fig. 6 Transmission spectra of a Si waveguide and the hybrid VO2/Si waveguide (a) with homogeneous VO2 layer and TE polarization and (b) with the granular VO2 and TM polarization. The VO2 metallic state is achieved by applying an electrical power of around (a) 45 mW for TE and (b) 70 mW for TM.
Fig. 7
Fig. 7 (a) Scheme of the switching process between maximum (Off) and minimum (On) optical levels and (b) electrical power (EP) of applied voltage pulses as a function of time and the corresponding response of the normalized optical power (NOP). (c) Scheme of the bistable switching performance between State 1 and State 2 and (d) temporal responses of EP and the corresponding NOP for successive reversible switching between both states.

Metrics