Abstract

The practical implementation of many quantum technologies relies on the development of robust and bright single photon sources that operate at room temperature. The negatively charged silicon-vacancy (SiV) color center in diamond is a possible candidate for such a single photon source. However, due to the high refraction index mismatch to air, color centers in diamond typically exhibit low photon out-coupling. An additional shortcoming is due to the random localization of native defects in the diamond sample. Here we demonstrate deterministic implantation of Si ions with high conversion efficiency to single SiV centers, targeted to fabricated nanowires. The co-localization of single SiV centers with the nanostructures yields a ten times higher light coupling efficiency than for single SiV centers in bulk diamond. This enhanced photon out-coupling, together with the intrinsic scalability of the SiV creation method, enables a new class of devices for integrated photonics and quantum science.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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References

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2017 (3)

B. Pingault, D.-D. Jarausch, C. Hepp, L. Klintberg, J. N. Becker, M. Markham, C. Becher, and M. Atatüre, “Coherent control of the silicon-vacancy spin in diamond,” Nat. Commun. 8, 15579 (2017).
[Crossref] [PubMed]

L. Ondic, M. Varga, K. Hruska, J. Fait, and P. Kapusta, “Enhanced extraction of silicon-vacancy centers light emission using bottom-up engineered polycrystalline diamond photonic crystal slabs,” ACS Nano 11, 2972–2981 (2017).
[Crossref] [PubMed]

T. Schröder, M. E. Trusheim, M. Walsh, L. Li, J. Zheng, M. Schukraft, A. Sipahigil, R. E. Evans, D. D. Sukachev, C. T. Nguyen, J. L. Pacheco, R. M. Camacho, E. S. Bielejec, M. D. Lukin, and D. Englund, “Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures,” Nat. Commun. 8, 15376 (2017).
[Crossref] [PubMed]

2016 (5)

J. Zhang, H. Ishiwata, T. Babinec, M. Radulaski, K. Muller, K. Lagoudakis, C. Dory, J. Dahl, R. E. V. Souliere, G. Ferro, A. A. Fokin, P. R. Schreiner, Z.-X. Shen, N. Melosh, and J. Vuckovic, “Hybrid group iv nanophotonic structures incorporating diamond silicon-vacancy color centers,” Nano Letters 16, 212–217 (2016).
[Crossref]

J. N. Becker, J. Görlitz, C. Arend, M. Markham, and C. Becher, “Ultrafast all-optical coherent control of single silicon vacancy colour centres in diamond,” Nat. Commun. 7, 13512 (2016).
[Crossref] [PubMed]

R. Evans, A. Sipahigil, D. D. Sukachev, A. S. Zibrov, and M. Lukin, “Narrow-linewidth homogeneous optical emitters in diamond nanostructures via silicon ion implantation,” Physical Review Applied 5, 044010 (2016).
[Crossref]

A. Sipahigil, R. E. Evans, D. D. Sukachev, M. J. Burek, J. Borregaard, M. K. Bhaskar, C. T. Nguyen, J. L. Pacheco, H. A. Atikian, C. Meuwly, R. M. Camacho, F. Jelezko, E. Bielejec, H. Park, M. Lončar, and M. D. Lukin, “An integrated diamond nanophotonics platform for quantum-optical networks,” Science 354, 847–850 (2016).
[Crossref] [PubMed]

A. Piracha, P. Rath, K. Ganesan, S. Kuhn, W. Pernice, and S. Prawer, “Scalable fabrication of integrated nanophotonic circuits on arrays of thin single crystal diamond membrane windows,” Nano Lett. 16, 3341–3347 (2016).
[Crossref] [PubMed]

2015 (6)

L. Li, E. Chen, J. Zheng, S. Mouradian, F. Dolde, T. Schröder, S. Karaveli, M. Markham, D. Twitchen, and D. Englund, “Efficient photon collection from a nitrogen vacancy center in a circular bullseye grating,” Nano Lett. 15, 1493–1497 (2015).
[Crossref] [PubMed]

Y. Li, P. Humphreys, G. Mendoza, and S. Benjamin, “Atom-like crystal defects: From quantum computers to biological sensors,” Phys. Rev. X 5, 041007 (2015).

S. A. Momenzadeh, R. J. Stöhr, F. F. de Oliveira, A. Brunner, A. Denisenko, S. Yang, F. Reinhard, and J. Wrachtrup, “Nanoengineered diamond waveguide as a robust bright platform for nanomagnetometry using shallow nitrogen vacancy centers,” Nano Letters 15, 165–169 (2015).
[Crossref]

S. Lagomarsino, F. Gorelli, M. Santoro, N. Fabbri, A. Hajeb, S. Sciortino, L. Palla, C. Czelusniak, M. Massi, F. Taccetti, L. Giuntini, N. Gelli, D. Y. Fedyanin, F. S. Cataliotti, C. Toninelli, and M. Agio, “Robust luminescence of the silicon-vacancy center in diamond at high temperatures,” AIP Advances 5, 127117 (2015).
[Crossref]

K. D. Jahnke, A. Sipahigil, J. M. Binder, M. W. Doherty, M. Metsch, L. J. Rogers, N. B. Manson, M. D. Lukin, and F. Jelezko, “Electron-phonon processes of the silicon-vacancy centre in diamond,” New J. Phys. 17, 043011 (2015).
[Crossref]

M. Berthel, O. Mollet, G. Dantelle, T. Gacoin, S. Huant, and A. Drezet, “Photophysics of single nitrogen-vacancy centers in diamond nanocrystals,” Phys. Rev. B 91, 035308 (2015).
[Crossref]

2014 (6)

T. Müller, C. Hepp, B. Pingault, E. Neu, S. Gsell, M. Schreck, H. Sternschulte, D. Steinmüller-Nethl, C. Becher, and M. Atatüre, “Optical signatures of silicon-vacancy spins in diamond,” Nat. Commun. 5, 3328 (2014).
[Crossref] [PubMed]

S. Tamura, G. Koike, A. Komatsubara, T. Teraji, S. O. L. McGuinness, L. Rogers, B. Naydenov, E. Wu, L. Yan, F. Jelezko, T. Ohshima, J. Isoya, T. Shinada, and T. Tanii, “Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation,” Appl. Phys. Express 7, 115201 (2014).
[Crossref]

L. Rogers, K. Jahnke, T. Teraji, L. Marseglia, C. Muller, B. Naydenov, H. Schauffert, C. Kranz, C. Isoya, L. McGuinness, and F. Jelezko, “Multiple intrinsically identical single-photon emitters in the solid state,” Nat. Commun. 5, 4739 (2014).
[Crossref] [PubMed]

J. Riedrich-Möller, C. Arend, C. Pauly, F. Mücklich, M. Fischer, S. Gsell, M. Schreck, and C. Becher, “Deterministic coupling of a single silicon-vacancy color center to a photonic crystal cavity in diamond,” Nano Lett. 9, 14 (2014).

M. Burek, Y. Chu, M. Liddy, P. Patel, J. Rochman, S. Meesala, W. Hong, Q. Quan, M. D. Lukin, and M. Lončar, “High quality-factor optical nanocavities in bulk single-crystal diamond,” Nat. Commun. 5, 5718 (2014).
[Crossref] [PubMed]

L. Childress, R. Walsworth, and M. Lukin, “Atom-like crystal defects: From quantum computers to biological sensors,” Physics Today 67, 38–43 (2014).
[Crossref]

2013 (3)

M. W. Doherty, N. B. Manson, P. Delaney, F. Jelezko, J. Wrachtrup, and L. C. Hollenberg, “The nitrogen-vacancy colour centre in diamond,” Physics Reports 528, 1–45 (2013).
[Crossref]

J. Kennard, J. H. L. Marseglia, I. Aharonovich, S. Castelletto, B. Patton, A. Politi, J. Matthews, A. Sinclair, B. Gibson, S. Prawer, J. Rarity, and J. O’Brien, “On-chip manipulation of single photons from a diamond defect,” Phys. Rev. Lett. 111, 213603 (2013).
[Crossref] [PubMed]

E. Neu, C. Hepp, M. Hauschild, S. Gsell, M. Fischer, H. Sternschulte, D. Steinmüller-Nethl, M. Schreck, and C. Becher, “Low-temperature investigations of single silicon vacancy colour centres in diamond,” New J. Phys. 15, 043005 (2013).
[Crossref]

2012 (2)

E. Neu, M. Agio, and C. Becher, “Photophysics of single silicon vacancy centers in diamond: implications for single photon emission,” Optics Express 20, 19956 (2012).
[Crossref] [PubMed]

P. Maletinsky, S. Hong, M. Grinolds, B. Hausmann, M. D. Lukin, R. L. Walsworth, M. Loncar, and A. Yacoby, “A robust scanning diamond sensor for nanoscale imaging with single nitrogen-vacancy centres,” Nat. Nanotechnol. 7, 320–324 (2012).
[Crossref] [PubMed]

2011 (2)

L. Marseglia, J. P. Hadden, A. C. Stanley-Clarke, J. P. Harrison, B. Patton, Y.-L. D. Ho, B. Naydenov, F. Jelezko, J. Meijer, P. Dolan, J. Smith, J. Rarity, and J. O’Brien, “Nanofabricated solid immersion lenses registered to single emitters in diamond,” App. Phys. Lett 98, 133107 (2011).
[Crossref]

E. Neu, D. Steinmetz, J. Riedrich-Möller, S. Gsell, M. Fischer, M. Schreck, and C. Becher, “Single photon emission from silicon-vacancy colour centres in chemical vapour deposition nano-diamonds on iridium,” New J. Phys. 13, 025012 (2011).
[Crossref]

2010 (1)

T. M. Babinec, J. M. Hausmann, M. Khan, Y. Zhang, J. R. Maze, P. R. Hemmer, and M. Loncar, “A diamond nanowire single-photon source,” Nat. Nanotech. 5, 195–199 (2010).
[Crossref]

2009 (3)

L. Jiang, J. M. Taylor, K. Nemoto, W. J. Munro, R. Van Meter, and M. D. Lukin, “Quantum repeater with encoding,” Phys. Rev. A 79, 032325 (2009).
[Crossref]

I. Aharonovich, C. Zhou, A. Stacey, J. Orwa, S. Castelletto, D. Simpson, A. Greentree, F. Treussart, J. Roch, and S. Prawer, “Enhanced single-photon emission in the near infrared from a diamond color center,” Phys. Rev. B 79, 235316 (2009).
[Crossref]

J. O’Brien, A. Furusawa, and J. Vuckovic, “Photonic quantum technologies,” Nature Photon. 3, 687–695 (2009).
[Crossref]

2008 (1)

J. M. Taylor, P. Cappellaro, L. Childress, L. Jiang, D. Budker, P. R. Hemmer, A. Yacoby, R. Walsworth, and M. D. Lukin, “High-sensitivity diamond magnetometer with nanoscale resolution,” Nat. Phys. 4, 810–816 (2008).
[Crossref]

2007 (1)

E. Wu, J. Rabeau, G. Roger, F. Treussart, H. Zeng, P. Grangier, S. Prawer, and J. Roch, “Room temperature triggered single-photon source in the near infrared,” New J. Phys. 9, 434 (2007).
[Crossref]

2002 (1)

A. Beveratos, S. Kühn, R. Brouri, T. Gacoin, J.-P. Poizat, and P. Grangier, “Room temperature stable single-photon source,” EPJ D 18, 191–196 (2002).
[Crossref]

2001 (2)

E. Knill, R. Laflamme, and G. J. Milburn, “A scheme for efficient quantum computation with linear optics,” Nature 409, 46 (2001).
[Crossref] [PubMed]

L.-M. Duan, M. D. Lukin, J. I. Cirac, and P. Zoller, “Long-distance quantum communication with atomic ensembles and linear optics,” Nature 414, 413 (2001).
[Crossref] [PubMed]

2000 (1)

1998 (1)

S. Kitson, P. Jonsson, J. Rarity, and P. Tapster, “Intensity fluctuation spectroscopy of small numbers of dye molecules in a microcavity,” Phys. Rev. A 58, 620 (1998).
[Crossref]

Agio, M.

S. Lagomarsino, F. Gorelli, M. Santoro, N. Fabbri, A. Hajeb, S. Sciortino, L. Palla, C. Czelusniak, M. Massi, F. Taccetti, L. Giuntini, N. Gelli, D. Y. Fedyanin, F. S. Cataliotti, C. Toninelli, and M. Agio, “Robust luminescence of the silicon-vacancy center in diamond at high temperatures,” AIP Advances 5, 127117 (2015).
[Crossref]

E. Neu, M. Agio, and C. Becher, “Photophysics of single silicon vacancy centers in diamond: implications for single photon emission,” Optics Express 20, 19956 (2012).
[Crossref] [PubMed]

Aharonovich, I.

J. Kennard, J. H. L. Marseglia, I. Aharonovich, S. Castelletto, B. Patton, A. Politi, J. Matthews, A. Sinclair, B. Gibson, S. Prawer, J. Rarity, and J. O’Brien, “On-chip manipulation of single photons from a diamond defect,” Phys. Rev. Lett. 111, 213603 (2013).
[Crossref] [PubMed]

I. Aharonovich, C. Zhou, A. Stacey, J. Orwa, S. Castelletto, D. Simpson, A. Greentree, F. Treussart, J. Roch, and S. Prawer, “Enhanced single-photon emission in the near infrared from a diamond color center,” Phys. Rev. B 79, 235316 (2009).
[Crossref]

Arend, C.

J. N. Becker, J. Görlitz, C. Arend, M. Markham, and C. Becher, “Ultrafast all-optical coherent control of single silicon vacancy colour centres in diamond,” Nat. Commun. 7, 13512 (2016).
[Crossref] [PubMed]

J. Riedrich-Möller, C. Arend, C. Pauly, F. Mücklich, M. Fischer, S. Gsell, M. Schreck, and C. Becher, “Deterministic coupling of a single silicon-vacancy color center to a photonic crystal cavity in diamond,” Nano Lett. 9, 14 (2014).

Atatüre, M.

B. Pingault, D.-D. Jarausch, C. Hepp, L. Klintberg, J. N. Becker, M. Markham, C. Becher, and M. Atatüre, “Coherent control of the silicon-vacancy spin in diamond,” Nat. Commun. 8, 15579 (2017).
[Crossref] [PubMed]

T. Müller, C. Hepp, B. Pingault, E. Neu, S. Gsell, M. Schreck, H. Sternschulte, D. Steinmüller-Nethl, C. Becher, and M. Atatüre, “Optical signatures of silicon-vacancy spins in diamond,” Nat. Commun. 5, 3328 (2014).
[Crossref] [PubMed]

Atikian, H. A.

A. Sipahigil, R. E. Evans, D. D. Sukachev, M. J. Burek, J. Borregaard, M. K. Bhaskar, C. T. Nguyen, J. L. Pacheco, H. A. Atikian, C. Meuwly, R. M. Camacho, F. Jelezko, E. Bielejec, H. Park, M. Lončar, and M. D. Lukin, “An integrated diamond nanophotonics platform for quantum-optical networks,” Science 354, 847–850 (2016).
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Babinec, T.

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AIP Advances (1)

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Figures (5)

Fig. 1
Fig. 1

(a) Simulation (FDTD Lumerical) of the intensity of the steady-state optical emission from a single SiV embedded in a nanowire (at a position of 120 nm from the nanowire top). The emission intensity is given by the magnitude of the electrical field normalized to the maximum emission. (b) Simulated dependence of nanowire collection efficiency on bottom diameter, with the top diameter fixed at the optimal value (350 nm, see Appendix). The collection efficiency was normalized to the collection efficiency of a dipole placed at the same distance. Inset: SiV atomic structure. (c) Simulated correlation between enhancement due to the nanowire and position of a single photon emitter measured from the substrate, i.e., height of SiV in nanowire.

Fig. 2
Fig. 2

Array of diamond nanowires containing SiV color centers. (a,b) Secondary electron emission images of the array of diamond nanowires studied in the present work. Each nanowire has a 350 nm top diameter, 650 nm bottom diameter, and height of 1.2 μm. (c) Confocal microscopy scan (15 × 15 μm2) of nanowire array after SiV creation with implantation dose of 20 ions/4.9ms. The bottom three rows of the array contain respectively 10(first row from the bottom), 7(second row) and 5 (third row) SiV centers per nanowire, while the other rows contain single or double SiV per nanowire. The measured SiV fluorescence count rate shows a clear connection between the number of Si ions implanted and the number of SiV created. Pixel size is 200 nm; integration time per pixel is 50 ms; point spread function is PSF≃ 1μm; and excitation laser power is PLaser = 10 mW.

Fig. 3
Fig. 3

Characterization of single SiV centers in nanowire (a) Second order autocorrelation function g(2)(τ) fitting (in red) the raw coincidence rate of measured single SiV fluorescence from one nanowire, with time bin δ = 0.012 ns, total integration time of 10, 000 s, and laser excitation power PLaser = 1 mW. (b) Spectra comparison for fluorescence from a single SiV in bulk diamond with linewidth Δλ = 0.24 nm, and a single SiV in a nanowire with linewidth Δλ = 0.1 nm, demonstrating SiV spectral stability after implantation. A small third spectral feature from the bulk SiV results from reduced overlap of the C-line and D-line due to strain in the bulk diamond. (c) Lifetime measurements for a single SiV in a nanowire at room and low (4 K) temperature, giving T1 values of, respectively, T 1 RT = 1.22 ns and T 1 LT = 1.73 ns.

Fig. 4
Fig. 4

Single SiV fluorescence rates in bulk diamond and nanowires. Measured fluorescence rates as a function of laser excitation power for single SiV centers in (a) bulk diamond and (b) a nanowire. Open black squares are raw counts; hollow black triangles are background; and filled red circles are normalized SiV counts. Backgrounds were measured, respectively, in an empty zone of the bulk with no SiV, and in a nanowire not implanted with silicon ions. (c) Single SiV optical properties (Psat and Isat)) for several nanowires in the array (red circles) compared to example single SiV centers in the bulk (blue open circles).(d) Estimated number of SiV defects created per nanowire, determined from measured values of Isat. Red circles indicate single SiV centers.

Fig. 5
Fig. 5

Simulation of the nanowire geometry showing the dependence of the simulated collection efficiency from the nanowire diameter. Here we assumed the nanowires to be cylindrical. We further optimized the geometry to match fabrication constraints as described in the main text.

Equations (4)

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g exp ( 2 ) ( τ ) = c ( τ ) N 1 N 2 T δ ,
g exp ( 2 ) ( τ ) = g ( 2 ) ( τ ) ρ 2 + ( 1 ρ 2 ) ,
g exp ( 2 ) ( τ ) = ( 1 + ( 1 + a ) e | τ | τ 1 + a e | τ | τ 2 ) ρ 2 + ( 1 ρ 2 ) .
I ( P ) = I sat P P + P sat .