Abstract

We demonstrate germanium (Ge) microdisks surrounded by highly reflective circular Bragg gratings on highly n-doped germanium-on-insulator (GOI) substrate. The GOI substrate is fabricated by wafer bonding from Ge grown on Si substrate, and n-type doping concentration of 2.1×1019 cm−3 is achieved by phosphorus diffusion from a spin-on-dopant source. Very sharp Fabry-Perot resonant peaks with high contrast fringes and Q-factors up to 400 are observed near the direct band gap of Ge in photoluminescence spectra. The reflectivity of gratings are enhanced by a factor larger than 3 in a wide wavelength range from 1.57 to 1.82 µm, compared with that of Ge/SiO2 interfaces in normal microdisks without circular Bragg gratings. The surface emission intensity of the devices is found to be increased by the grating period. Our results indicate that GOI microdisk with circular Bragg grating is a promising optical resonator structure suitable for realizing low threshold, compact Ge lasers integrated on Si substrate.

© 2017 Optical Society of America

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References

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2017 (1)

R. Milazzo, G. Impellizzeri, D. Piccinotti, D. De Salvador, A. Portavoce, A. La Magna, G. Fortunato, D. Mangelinck, V. Privitera, A. Carnera, and E. Napolitani, “Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing,” Appl. Phys. Lett. 110, 011905 (2017).
[Crossref]

2016 (7)

S. Prucnal, F. Liu, M. Voelskow, L. Vines, L. Rebohle, D. Lang, Y. Berencen, S. Andric, R. Boettger, M. Helm, S. Zhou, and W. Skorupa, “Ultra-doped n-type germanium thin films for sensing in the mid-infrared,” Sci. Rep. 6, 27643 (2016).
[Crossref] [PubMed]

R. W. Millar, K. Gallacher, J. Frigerio, A. Ballabio, A. Bashir, I. MacLaren, G. Isella, and D. J. Paul, “Analysis of Ge micro-cavities with in-plane tensile strains above 2 %,” Opt. Express 24(5), 4365–4374 (2016).
[Crossref]

M. El Kurdi, M. Prost, A. Ghrib, A. Elbaz, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, F. Boeuf, and P. Boucaud, “Tensile-strained germanium microdisks with circular Bragg reflectors,” Appl. Phys. Lett. 108, 091103 (2016).
[Crossref]

X. Xu, H. Hashimoto, K. Yoshida, K. Sawano, and T. Maruizumi, “High Q-factor resonant photoluminescence from Ge-on-Insulator microdisks,” Proc. SPIE 9891, 98910V (2016).
[Crossref]

S. Saito, A. Z. Al-Attili, K. Oda, and Y. Ishikawa, “Towards monolithic integration of germanium light sources on silicon chips,” Semicond. Sci. Technol. 31, 043002 (2016).
[Crossref]

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. Driesch, G. Mussler, T. Zabel, T. Stoica, J. Hartmann, S. Mantl, Z. Ikonic, D. Grutzmacher, H. Sigg, J. Witzens, and D. Buca, “Optically pumped GeSn microdisk lasers on Si,” ACS Photon. 3(7), 1279–1285 (2016).
[Crossref]

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S. Yu, “An optically pumped 2.5 µ m GeSn laser on Si operating at 110K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

2015 (4)

R. Koerner, M. Oehme, M. Gollhofer, M. Schmid, K. Kostecki, S. Bechler, D. Widmann, E. Kasper, and J. Schulze, “Electrically pumped lasing from Ge Fabry-Perot resonators on Si,” Opt. Express 23(11), 14815–14822 (2015).
[Crossref] [PubMed]

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grutzmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]

X. Xu, X. Wang, K. Nishida, K. Takabayashi, K. Sawano, Y. Shiraki, H. Li, J. Liu, and T. Maruizumi, “Ultralarge transient optical gain from tensile-strained, n-doped germanium on silicon by spin-on dopant diffusion,” Appl. Phys. Express 8, 092101 (2015).
[Crossref]

A. Z. Al-Attili, S. Kako, M. K. Husain, F. Y. Gardes, N. Higashitarumizu, S. Iwamoto, Y. Arakawa, Y. Ishikawa, H. Arimoto, K. Oda, and S. Saito, “Whispering galler mode resonances from Ge micro-disks on suspended beams,” Front. Mater. 2, 00043 (2015).
[Crossref]

2014 (3)

Y. Moriyama, K. Ikeda, S. Takeuchi, Y. Kamimuta, Y. Nakamura, K. Izunome, A. Sakai, and T. Tezuka, “Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers,” Appl. Phys. Express 7, 086501 (2014).
[Crossref]

G. Capellini, C. Reich, S. Guha, Y. Yamamoto, M. Lisker, M. Virgilio, A. Ghrib, M. El Kurdi, P. Boucaud, B. Tillack, and T. Schroeder, “Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process,” Opt. Express 22(1), 399–410 (2014).
[Crossref] [PubMed]

K. Nishida, X. Xu, K. Sawano, T. Maruizumi, and Y. Shiraki, “Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy,” Thin Solid Films 557, 66–69 (2014).
[Crossref]

2013 (3)

M. J. Suess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Analysis of enhanced light emission from highly strained germanium microbridges,” Nat. Photonics 7(6), 466–472 (2013).
[Crossref]

R. Camacho-Aguilera, Z. Han, Y. Cai, L. C. Kimerling, and J. Michel, “Direct band gap narrowing in highly doped Ge,” Appl. Phys. Lett. 102, 152106 (2013).
[Crossref]

A. Ghrib, M. El Kurdi, M. de Kersauson, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, and P. Boucaud, “Tensile-strained germanium microdisks,” Appl. Phys. Lett. 102, 221112 (2013).
[Crossref]

2012 (4)

R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref] [PubMed]

X. Xu, S. Narusawa, T. Chiba, T. Tsuboi, J. Xia, N. Usami, T. Maruizumi, and Y. Shiraki, “Silicon-based light-emitting devices based on Ge self-assembled quantum dots embedded in optical cavities,” IEEE J. Sel. Top. Quantum Electron. 18(6), 1830–1838 (2012).
[Crossref]

J. R. Jain, A. Hryciw, T. M. Baer, D. A. B. Miller, M. L. Brongersma, and R. T. Howe, “A micromachining-based technology for enhancing germanium light emission via tensile strain,” Nat. Photonics 6(6), 398–405 (2012).
[Crossref]

Y. Hoshi, K. Sawano, K. Hamaya, M. Miyao, and Y. Shiraki, “Formation of tensilely strained germanium-on-insulator,” Appl. Phys. Express 5, 015701 (2012).
[Crossref]

2011 (2)

J. R. Jain, D. Ly-Gagnon, K. C. Balram, J. S. White, M. L. Brongersma, D. A. B. Miller, and R. T. Howe, “Tensile-strained germanium-on-insulator substrate fabrication for silicon-compatible optoelectronics,” Opt. Mater. Express 1(6), 1121–1126 (2011).
[Crossref]

R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, and J. S. Harris, “Increased photoluminescence of strain-reduced, high-Sn composition Ge1−x Snx alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 99, 181125 (2011).
[Crossref]

2010 (2)

J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, “Ge-on-Si laser operating at room temperature,” Opt. Lett. 35(5), 679–681 (2010).
[Crossref] [PubMed]

G. Shambat, S. Cheng, J. Lu, Y. Nishi, and J. Vuckovic, “Direct band Ge photoluminescence near 1.6 µ m coupled to Ge-on-Si microdisk resonators,” Appl. Phys. Lett. 97, 241102 (2010).
[Crossref]

2009 (1)

M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Debarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94, 191107 (2009).
[Crossref]

2008 (2)

P. H. Lim, Y. Kobayashi, S. Takita, Y. Ishikawa, and K. Wada, “Enhanced photoluminescence from germanium-based ring resonators,” Appl. Phys. Lett. 93, 041103 (2008).
[Crossref]

X. Sun and A. Yariv, “Surface-emitting circular DFB, disk-, and ring-Bragg resonator lasers with chirped gratings: a unified theory and comparative study,” Opt. Express 16(12), 9155–9164 (2008).
[Crossref] [PubMed]

2007 (3)

2006 (2)

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006).
[Crossref] [PubMed]

M. Y. Su and R. P. Mirin, “Enhanced light extraction from circular Bragg grating coupled microcavities,” Appl. Phys. Lett. 89, 033105 (2006).
[Crossref]

1999 (1)

H. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]

Al-Attili, A. Z.

S. Saito, A. Z. Al-Attili, K. Oda, and Y. Ishikawa, “Towards monolithic integration of germanium light sources on silicon chips,” Semicond. Sci. Technol. 31, 043002 (2016).
[Crossref]

A. Z. Al-Attili, S. Kako, M. K. Husain, F. Y. Gardes, N. Higashitarumizu, S. Iwamoto, Y. Arakawa, Y. Ishikawa, H. Arimoto, K. Oda, and S. Saito, “Whispering galler mode resonances from Ge micro-disks on suspended beams,” Front. Mater. 2, 00043 (2015).
[Crossref]

Al-Kabi, S.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S. Yu, “An optically pumped 2.5 µ m GeSn laser on Si operating at 110K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Andric, S.

S. Prucnal, F. Liu, M. Voelskow, L. Vines, L. Rebohle, D. Lang, Y. Berencen, S. Andric, R. Boettger, M. Helm, S. Zhou, and W. Skorupa, “Ultra-doped n-type germanium thin films for sensing in the mid-infrared,” Sci. Rep. 6, 27643 (2016).
[Crossref] [PubMed]

Arakawa, Y.

A. Z. Al-Attili, S. Kako, M. K. Husain, F. Y. Gardes, N. Higashitarumizu, S. Iwamoto, Y. Arakawa, Y. Ishikawa, H. Arimoto, K. Oda, and S. Saito, “Whispering galler mode resonances from Ge micro-disks on suspended beams,” Front. Mater. 2, 00043 (2015).
[Crossref]

Arimoto, H.

A. Z. Al-Attili, S. Kako, M. K. Husain, F. Y. Gardes, N. Higashitarumizu, S. Iwamoto, Y. Arakawa, Y. Ishikawa, H. Arimoto, K. Oda, and S. Saito, “Whispering galler mode resonances from Ge micro-disks on suspended beams,” Front. Mater. 2, 00043 (2015).
[Crossref]

Baer, T. M.

J. R. Jain, A. Hryciw, T. M. Baer, D. A. B. Miller, M. L. Brongersma, and R. T. Howe, “A micromachining-based technology for enhancing germanium light emission via tensile strain,” Nat. Photonics 6(6), 398–405 (2012).
[Crossref]

Baets, R.

Ballabio, A.

Balram, K. C.

Bashir, A.

Beaudoin, G.

M. El Kurdi, M. Prost, A. Ghrib, A. Elbaz, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, F. Boeuf, and P. Boucaud, “Tensile-strained germanium microdisks with circular Bragg reflectors,” Appl. Phys. Lett. 108, 091103 (2016).
[Crossref]

A. Ghrib, M. El Kurdi, M. de Kersauson, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, and P. Boucaud, “Tensile-strained germanium microdisks,” Appl. Phys. Lett. 102, 221112 (2013).
[Crossref]

Bechler, S.

Bensahel, D.

M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Debarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94, 191107 (2009).
[Crossref]

Berencen, Y.

S. Prucnal, F. Liu, M. Voelskow, L. Vines, L. Rebohle, D. Lang, Y. Berencen, S. Andric, R. Boettger, M. Helm, S. Zhou, and W. Skorupa, “Ultra-doped n-type germanium thin films for sensing in the mid-infrared,” Sci. Rep. 6, 27643 (2016).
[Crossref] [PubMed]

Bessette, J. T.

Boettger, R.

S. Prucnal, F. Liu, M. Voelskow, L. Vines, L. Rebohle, D. Lang, Y. Berencen, S. Andric, R. Boettger, M. Helm, S. Zhou, and W. Skorupa, “Ultra-doped n-type germanium thin films for sensing in the mid-infrared,” Sci. Rep. 6, 27643 (2016).
[Crossref] [PubMed]

Boeuf, F.

M. El Kurdi, M. Prost, A. Ghrib, A. Elbaz, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, F. Boeuf, and P. Boucaud, “Tensile-strained germanium microdisks with circular Bragg reflectors,” Appl. Phys. Lett. 108, 091103 (2016).
[Crossref]

Boucaud, P.

M. El Kurdi, M. Prost, A. Ghrib, A. Elbaz, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, F. Boeuf, and P. Boucaud, “Tensile-strained germanium microdisks with circular Bragg reflectors,” Appl. Phys. Lett. 108, 091103 (2016).
[Crossref]

G. Capellini, C. Reich, S. Guha, Y. Yamamoto, M. Lisker, M. Virgilio, A. Ghrib, M. El Kurdi, P. Boucaud, B. Tillack, and T. Schroeder, “Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process,” Opt. Express 22(1), 399–410 (2014).
[Crossref] [PubMed]

A. Ghrib, M. El Kurdi, M. de Kersauson, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, and P. Boucaud, “Tensile-strained germanium microdisks,” Appl. Phys. Lett. 102, 221112 (2013).
[Crossref]

M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Debarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94, 191107 (2009).
[Crossref]

Boulmer, J.

M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Debarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94, 191107 (2009).
[Crossref]

Bowers, J. E.

Brongersma, M. L.

J. R. Jain, A. Hryciw, T. M. Baer, D. A. B. Miller, M. L. Brongersma, and R. T. Howe, “A micromachining-based technology for enhancing germanium light emission via tensile strain,” Nat. Photonics 6(6), 398–405 (2012).
[Crossref]

J. R. Jain, D. Ly-Gagnon, K. C. Balram, J. S. White, M. L. Brongersma, D. A. B. Miller, and R. T. Howe, “Tensile-strained germanium-on-insulator substrate fabrication for silicon-compatible optoelectronics,” Opt. Mater. Express 1(6), 1121–1126 (2011).
[Crossref]

Buca, D.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. Driesch, G. Mussler, T. Zabel, T. Stoica, J. Hartmann, S. Mantl, Z. Ikonic, D. Grutzmacher, H. Sigg, J. Witzens, and D. Buca, “Optically pumped GeSn microdisk lasers on Si,” ACS Photon. 3(7), 1279–1285 (2016).
[Crossref]

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grutzmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]

Cai, Y.

R. Camacho-Aguilera, Z. Han, Y. Cai, L. C. Kimerling, and J. Michel, “Direct band gap narrowing in highly doped Ge,” Appl. Phys. Lett. 102, 152106 (2013).
[Crossref]

R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref] [PubMed]

Camacho-Aguilera, R.

R. Camacho-Aguilera, Z. Han, Y. Cai, L. C. Kimerling, and J. Michel, “Direct band gap narrowing in highly doped Ge,” Appl. Phys. Lett. 102, 152106 (2013).
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J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, “Ge-on-Si laser operating at room temperature,” Opt. Lett. 35(5), 679–681 (2010).
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Camacho-Aguilera, R. E.

Capellini, G.

Carnera, A.

R. Milazzo, G. Impellizzeri, D. Piccinotti, D. De Salvador, A. Portavoce, A. La Magna, G. Fortunato, D. Mangelinck, V. Privitera, A. Carnera, and E. Napolitani, “Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing,” Appl. Phys. Lett. 110, 011905 (2017).
[Crossref]

Checoury, X.

M. El Kurdi, M. Prost, A. Ghrib, A. Elbaz, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, F. Boeuf, and P. Boucaud, “Tensile-strained germanium microdisks with circular Bragg reflectors,” Appl. Phys. Lett. 108, 091103 (2016).
[Crossref]

A. Ghrib, M. El Kurdi, M. de Kersauson, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, and P. Boucaud, “Tensile-strained germanium microdisks,” Appl. Phys. Lett. 102, 221112 (2013).
[Crossref]

Chen, K. M.

H. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
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Chen, R.

R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, and J. S. Harris, “Increased photoluminescence of strain-reduced, high-Sn composition Ge1−x Snx alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 99, 181125 (2011).
[Crossref]

Cheng, S.

G. Shambat, S. Cheng, J. Lu, Y. Nishi, and J. Vuckovic, “Direct band Ge photoluminescence near 1.6 µ m coupled to Ge-on-Si microdisk resonators,” Appl. Phys. Lett. 97, 241102 (2010).
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Chiba, T.

X. Xu, S. Narusawa, T. Chiba, T. Tsuboi, J. Xia, N. Usami, T. Maruizumi, and Y. Shiraki, “Silicon-based light-emitting devices based on Ge self-assembled quantum dots embedded in optical cavities,” IEEE J. Sel. Top. Quantum Electron. 18(6), 1830–1838 (2012).
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Chiussi, S.

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grutzmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]

Chrastina, D.

M. J. Suess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Analysis of enhanced light emission from highly strained germanium microbridges,” Nat. Photonics 7(6), 466–472 (2013).
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Cohen, O.

Collier, B.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S. Yu, “An optically pumped 2.5 µ m GeSn laser on Si operating at 110K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Damlencourt, J. F.

M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Debarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94, 191107 (2009).
[Crossref]

de Kersauson, M.

A. Ghrib, M. El Kurdi, M. de Kersauson, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, and P. Boucaud, “Tensile-strained germanium microdisks,” Appl. Phys. Lett. 102, 221112 (2013).
[Crossref]

De Salvador, D.

R. Milazzo, G. Impellizzeri, D. Piccinotti, D. De Salvador, A. Portavoce, A. La Magna, G. Fortunato, D. Mangelinck, V. Privitera, A. Carnera, and E. Napolitani, “Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing,” Appl. Phys. Lett. 110, 011905 (2017).
[Crossref]

Debarre, D.

M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Debarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94, 191107 (2009).
[Crossref]

Di Cioccio, L.

Dou, W.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S. Yu, “An optically pumped 2.5 µ m GeSn laser on Si operating at 110K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Driesch, N.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. Driesch, G. Mussler, T. Zabel, T. Stoica, J. Hartmann, S. Mantl, Z. Ikonic, D. Grutzmacher, H. Sigg, J. Witzens, and D. Buca, “Optically pumped GeSn microdisk lasers on Si,” ACS Photon. 3(7), 1279–1285 (2016).
[Crossref]

Du, W.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S. Yu, “An optically pumped 2.5 µ m GeSn laser on Si operating at 110K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

El Kurdi, M.

M. El Kurdi, M. Prost, A. Ghrib, A. Elbaz, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, F. Boeuf, and P. Boucaud, “Tensile-strained germanium microdisks with circular Bragg reflectors,” Appl. Phys. Lett. 108, 091103 (2016).
[Crossref]

G. Capellini, C. Reich, S. Guha, Y. Yamamoto, M. Lisker, M. Virgilio, A. Ghrib, M. El Kurdi, P. Boucaud, B. Tillack, and T. Schroeder, “Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process,” Opt. Express 22(1), 399–410 (2014).
[Crossref] [PubMed]

A. Ghrib, M. El Kurdi, M. de Kersauson, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, and P. Boucaud, “Tensile-strained germanium microdisks,” Appl. Phys. Lett. 102, 221112 (2013).
[Crossref]

M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Debarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94, 191107 (2009).
[Crossref]

Elbaz, A.

M. El Kurdi, M. Prost, A. Ghrib, A. Elbaz, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, F. Boeuf, and P. Boucaud, “Tensile-strained germanium microdisks with circular Bragg reflectors,” Appl. Phys. Lett. 108, 091103 (2016).
[Crossref]

Faist, J.

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grutzmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]

M. J. Suess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Analysis of enhanced light emission from highly strained germanium microbridges,” Nat. Photonics 7(6), 466–472 (2013).
[Crossref]

Fang, A. W.

Fedeli, J.-M.

Fortunato, G.

R. Milazzo, G. Impellizzeri, D. Piccinotti, D. De Salvador, A. Portavoce, A. La Magna, G. Fortunato, D. Mangelinck, V. Privitera, A. Carnera, and E. Napolitani, “Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing,” Appl. Phys. Lett. 110, 011905 (2017).
[Crossref]

Frigerio, J.

R. W. Millar, K. Gallacher, J. Frigerio, A. Ballabio, A. Bashir, I. MacLaren, G. Isella, and D. J. Paul, “Analysis of Ge micro-cavities with in-plane tensile strains above 2 %,” Opt. Express 24(5), 4365–4374 (2016).
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M. J. Suess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Analysis of enhanced light emission from highly strained germanium microbridges,” Nat. Photonics 7(6), 466–472 (2013).
[Crossref]

Gallacher, K.

Gardes, F. Y.

A. Z. Al-Attili, S. Kako, M. K. Husain, F. Y. Gardes, N. Higashitarumizu, S. Iwamoto, Y. Arakawa, Y. Ishikawa, H. Arimoto, K. Oda, and S. Saito, “Whispering galler mode resonances from Ge micro-disks on suspended beams,” Front. Mater. 2, 00043 (2015).
[Crossref]

Geiger, R.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. Driesch, G. Mussler, T. Zabel, T. Stoica, J. Hartmann, S. Mantl, Z. Ikonic, D. Grutzmacher, H. Sigg, J. Witzens, and D. Buca, “Optically pumped GeSn microdisk lasers on Si,” ACS Photon. 3(7), 1279–1285 (2016).
[Crossref]

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grutzmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]

M. J. Suess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Analysis of enhanced light emission from highly strained germanium microbridges,” Nat. Photonics 7(6), 466–472 (2013).
[Crossref]

Ghetmiri, S. A.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S. Yu, “An optically pumped 2.5 µ m GeSn laser on Si operating at 110K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Ghrib, A.

M. El Kurdi, M. Prost, A. Ghrib, A. Elbaz, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, F. Boeuf, and P. Boucaud, “Tensile-strained germanium microdisks with circular Bragg reflectors,” Appl. Phys. Lett. 108, 091103 (2016).
[Crossref]

G. Capellini, C. Reich, S. Guha, Y. Yamamoto, M. Lisker, M. Virgilio, A. Ghrib, M. El Kurdi, P. Boucaud, B. Tillack, and T. Schroeder, “Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process,” Opt. Express 22(1), 399–410 (2014).
[Crossref] [PubMed]

A. Ghrib, M. El Kurdi, M. de Kersauson, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, and P. Boucaud, “Tensile-strained germanium microdisks,” Appl. Phys. Lett. 102, 221112 (2013).
[Crossref]

Gollhofer, M.

Grutzmacher, D.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. Driesch, G. Mussler, T. Zabel, T. Stoica, J. Hartmann, S. Mantl, Z. Ikonic, D. Grutzmacher, H. Sigg, J. Witzens, and D. Buca, “Optically pumped GeSn microdisk lasers on Si,” ACS Photon. 3(7), 1279–1285 (2016).
[Crossref]

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grutzmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]

Guha, S.

Hamaya, K.

Y. Hoshi, K. Sawano, K. Hamaya, M. Miyao, and Y. Shiraki, “Formation of tensilely strained germanium-on-insulator,” Appl. Phys. Express 5, 015701 (2012).
[Crossref]

Han, Z.

R. Camacho-Aguilera, Z. Han, Y. Cai, L. C. Kimerling, and J. Michel, “Direct band gap narrowing in highly doped Ge,” Appl. Phys. Lett. 102, 152106 (2013).
[Crossref]

Harris, J. S.

R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, and J. S. Harris, “Increased photoluminescence of strain-reduced, high-Sn composition Ge1−x Snx alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 99, 181125 (2011).
[Crossref]

Hartmann, J.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. Driesch, G. Mussler, T. Zabel, T. Stoica, J. Hartmann, S. Mantl, Z. Ikonic, D. Grutzmacher, H. Sigg, J. Witzens, and D. Buca, “Optically pumped GeSn microdisk lasers on Si,” ACS Photon. 3(7), 1279–1285 (2016).
[Crossref]

Hartmann, J. M.

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grutzmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
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Hashimoto, H.

X. Xu, H. Hashimoto, K. Yoshida, K. Sawano, and T. Maruizumi, “High Q-factor resonant photoluminescence from Ge-on-Insulator microdisks,” Proc. SPIE 9891, 98910V (2016).
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Helm, M.

S. Prucnal, F. Liu, M. Voelskow, L. Vines, L. Rebohle, D. Lang, Y. Berencen, S. Andric, R. Boettger, M. Helm, S. Zhou, and W. Skorupa, “Ultra-doped n-type germanium thin films for sensing in the mid-infrared,” Sci. Rep. 6, 27643 (2016).
[Crossref] [PubMed]

Higashitarumizu, N.

A. Z. Al-Attili, S. Kako, M. K. Husain, F. Y. Gardes, N. Higashitarumizu, S. Iwamoto, Y. Arakawa, Y. Ishikawa, H. Arimoto, K. Oda, and S. Saito, “Whispering galler mode resonances from Ge micro-disks on suspended beams,” Front. Mater. 2, 00043 (2015).
[Crossref]

Hitzman, C.

R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, and J. S. Harris, “Increased photoluminescence of strain-reduced, high-Sn composition Ge1−x Snx alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 99, 181125 (2011).
[Crossref]

Hoshi, Y.

Y. Hoshi, K. Sawano, K. Hamaya, M. Miyao, and Y. Shiraki, “Formation of tensilely strained germanium-on-insulator,” Appl. Phys. Express 5, 015701 (2012).
[Crossref]

Howe, R. T.

J. R. Jain, A. Hryciw, T. M. Baer, D. A. B. Miller, M. L. Brongersma, and R. T. Howe, “A micromachining-based technology for enhancing germanium light emission via tensile strain,” Nat. Photonics 6(6), 398–405 (2012).
[Crossref]

J. R. Jain, D. Ly-Gagnon, K. C. Balram, J. S. White, M. L. Brongersma, D. A. B. Miller, and R. T. Howe, “Tensile-strained germanium-on-insulator substrate fabrication for silicon-compatible optoelectronics,” Opt. Mater. Express 1(6), 1121–1126 (2011).
[Crossref]

Hryciw, A.

J. R. Jain, A. Hryciw, T. M. Baer, D. A. B. Miller, M. L. Brongersma, and R. T. Howe, “A micromachining-based technology for enhancing germanium light emission via tensile strain,” Nat. Photonics 6(6), 398–405 (2012).
[Crossref]

Huo, Y.

R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, and J. S. Harris, “Increased photoluminescence of strain-reduced, high-Sn composition Ge1−x Snx alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 99, 181125 (2011).
[Crossref]

Husain, M. K.

A. Z. Al-Attili, S. Kako, M. K. Husain, F. Y. Gardes, N. Higashitarumizu, S. Iwamoto, Y. Arakawa, Y. Ishikawa, H. Arimoto, K. Oda, and S. Saito, “Whispering galler mode resonances from Ge micro-disks on suspended beams,” Front. Mater. 2, 00043 (2015).
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Ikeda, K.

Y. Moriyama, K. Ikeda, S. Takeuchi, Y. Kamimuta, Y. Nakamura, K. Izunome, A. Sakai, and T. Tezuka, “Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers,” Appl. Phys. Express 7, 086501 (2014).
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J. S. Xia, Y. Ikegami, K. Nemoto, and Y. Shiraki, “Observation of whispering-gallery modes in Si microdisks at room temperature,” Appl. Phys. Lett. 90, 141102 (2007).
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Ikonic, Z.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. Driesch, G. Mussler, T. Zabel, T. Stoica, J. Hartmann, S. Mantl, Z. Ikonic, D. Grutzmacher, H. Sigg, J. Witzens, and D. Buca, “Optically pumped GeSn microdisk lasers on Si,” ACS Photon. 3(7), 1279–1285 (2016).
[Crossref]

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grutzmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]

Impellizzeri, G.

R. Milazzo, G. Impellizzeri, D. Piccinotti, D. De Salvador, A. Portavoce, A. La Magna, G. Fortunato, D. Mangelinck, V. Privitera, A. Carnera, and E. Napolitani, “Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing,” Appl. Phys. Lett. 110, 011905 (2017).
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S. Saito, A. Z. Al-Attili, K. Oda, and Y. Ishikawa, “Towards monolithic integration of germanium light sources on silicon chips,” Semicond. Sci. Technol. 31, 043002 (2016).
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Y. Moriyama, K. Ikeda, S. Takeuchi, Y. Kamimuta, Y. Nakamura, K. Izunome, A. Sakai, and T. Tezuka, “Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers,” Appl. Phys. Express 7, 086501 (2014).
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J. R. Jain, A. Hryciw, T. M. Baer, D. A. B. Miller, M. L. Brongersma, and R. T. Howe, “A micromachining-based technology for enhancing germanium light emission via tensile strain,” Nat. Photonics 6(6), 398–405 (2012).
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J. R. Jain, D. Ly-Gagnon, K. C. Balram, J. S. White, M. L. Brongersma, D. A. B. Miller, and R. T. Howe, “Tensile-strained germanium-on-insulator substrate fabrication for silicon-compatible optoelectronics,” Opt. Mater. Express 1(6), 1121–1126 (2011).
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Y. Moriyama, K. Ikeda, S. Takeuchi, Y. Kamimuta, Y. Nakamura, K. Izunome, A. Sakai, and T. Tezuka, “Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers,” Appl. Phys. Express 7, 086501 (2014).
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R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, and J. S. Harris, “Increased photoluminescence of strain-reduced, high-Sn composition Ge1−x Snx alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 99, 181125 (2011).
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Kobayashi, Y.

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Kociniewski, T.

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S. Prucnal, F. Liu, M. Voelskow, L. Vines, L. Rebohle, D. Lang, Y. Berencen, S. Andric, R. Boettger, M. Helm, S. Zhou, and W. Skorupa, “Ultra-doped n-type germanium thin films for sensing in the mid-infrared,” Sci. Rep. 6, 27643 (2016).
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X. Xu, X. Wang, K. Nishida, K. Takabayashi, K. Sawano, Y. Shiraki, H. Li, J. Liu, and T. Maruizumi, “Ultralarge transient optical gain from tensile-strained, n-doped germanium on silicon by spin-on dopant diffusion,” Appl. Phys. Express 8, 092101 (2015).
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H. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
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R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, and J. S. Harris, “Increased photoluminescence of strain-reduced, high-Sn composition Ge1−x Snx alloys grown by molecular beam epitaxy,” Appl. Phys. Lett. 99, 181125 (2011).
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Liu, F.

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S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S. Yu, “An optically pumped 2.5 µ m GeSn laser on Si operating at 110K,” Appl. Phys. Lett. 109, 171105 (2016).
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X. Xu, X. Wang, K. Nishida, K. Takabayashi, K. Sawano, Y. Shiraki, H. Li, J. Liu, and T. Maruizumi, “Ultralarge transient optical gain from tensile-strained, n-doped germanium on silicon by spin-on dopant diffusion,” Appl. Phys. Express 8, 092101 (2015).
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MacLaren, I.

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S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S. Yu, “An optically pumped 2.5 µ m GeSn laser on Si operating at 110K,” Appl. Phys. Lett. 109, 171105 (2016).
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S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S. Yu, “An optically pumped 2.5 µ m GeSn laser on Si operating at 110K,” Appl. Phys. Lett. 109, 171105 (2016).
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X. Xu, X. Wang, K. Nishida, K. Takabayashi, K. Sawano, Y. Shiraki, H. Li, J. Liu, and T. Maruizumi, “Ultralarge transient optical gain from tensile-strained, n-doped germanium on silicon by spin-on dopant diffusion,” Appl. Phys. Express 8, 092101 (2015).
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S. Saito, A. Z. Al-Attili, K. Oda, and Y. Ishikawa, “Towards monolithic integration of germanium light sources on silicon chips,” Semicond. Sci. Technol. 31, 043002 (2016).
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[Crossref] [PubMed]

Quinde, R.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S. Yu, “An optically pumped 2.5 µ m GeSn laser on Si operating at 110K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Rebohle, L.

S. Prucnal, F. Liu, M. Voelskow, L. Vines, L. Rebohle, D. Lang, Y. Berencen, S. Andric, R. Boettger, M. Helm, S. Zhou, and W. Skorupa, “Ultra-doped n-type germanium thin films for sensing in the mid-infrared,” Sci. Rep. 6, 27643 (2016).
[Crossref] [PubMed]

Regreny, P.

Reich, C.

Rojo-Romeo, P.

Romagnoli, M.

Sagnes, I.

M. El Kurdi, M. Prost, A. Ghrib, A. Elbaz, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, F. Boeuf, and P. Boucaud, “Tensile-strained germanium microdisks with circular Bragg reflectors,” Appl. Phys. Lett. 108, 091103 (2016).
[Crossref]

A. Ghrib, M. El Kurdi, M. de Kersauson, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, and P. Boucaud, “Tensile-strained germanium microdisks,” Appl. Phys. Lett. 102, 221112 (2013).
[Crossref]

Saito, S.

S. Saito, A. Z. Al-Attili, K. Oda, and Y. Ishikawa, “Towards monolithic integration of germanium light sources on silicon chips,” Semicond. Sci. Technol. 31, 043002 (2016).
[Crossref]

A. Z. Al-Attili, S. Kako, M. K. Husain, F. Y. Gardes, N. Higashitarumizu, S. Iwamoto, Y. Arakawa, Y. Ishikawa, H. Arimoto, K. Oda, and S. Saito, “Whispering galler mode resonances from Ge micro-disks on suspended beams,” Front. Mater. 2, 00043 (2015).
[Crossref]

Sakai, A.

Y. Moriyama, K. Ikeda, S. Takeuchi, Y. Kamimuta, Y. Nakamura, K. Izunome, A. Sakai, and T. Tezuka, “Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers,” Appl. Phys. Express 7, 086501 (2014).
[Crossref]

Sandland, J. G.

H. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]

Sauvage, S.

M. El Kurdi, M. Prost, A. Ghrib, A. Elbaz, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, F. Boeuf, and P. Boucaud, “Tensile-strained germanium microdisks with circular Bragg reflectors,” Appl. Phys. Lett. 108, 091103 (2016).
[Crossref]

A. Ghrib, M. El Kurdi, M. de Kersauson, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, and P. Boucaud, “Tensile-strained germanium microdisks,” Appl. Phys. Lett. 102, 221112 (2013).
[Crossref]

Sawano, K.

X. Xu, H. Hashimoto, K. Yoshida, K. Sawano, and T. Maruizumi, “High Q-factor resonant photoluminescence from Ge-on-Insulator microdisks,” Proc. SPIE 9891, 98910V (2016).
[Crossref]

X. Xu, X. Wang, K. Nishida, K. Takabayashi, K. Sawano, Y. Shiraki, H. Li, J. Liu, and T. Maruizumi, “Ultralarge transient optical gain from tensile-strained, n-doped germanium on silicon by spin-on dopant diffusion,” Appl. Phys. Express 8, 092101 (2015).
[Crossref]

K. Nishida, X. Xu, K. Sawano, T. Maruizumi, and Y. Shiraki, “Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy,” Thin Solid Films 557, 66–69 (2014).
[Crossref]

Y. Hoshi, K. Sawano, K. Hamaya, M. Miyao, and Y. Shiraki, “Formation of tensilely strained germanium-on-insulator,” Appl. Phys. Express 5, 015701 (2012).
[Crossref]

X. Xu, K. Nishida, K. Sawano, T. Maruizumi, and Y. Shiraki, “Resonant photoluminescence from microdisk based on n-doped, tensile-strained Ge on Si,” presented at International Conference on Solid State Devices and MaterialsFukuoka, Japan, 24–27, Sept. 2013

X. Xu, K. Sawano, T. Maruizumi, and Y. Shiraki, “Resonant light emission from n-doped Germanium-on-Insulator microdisks at room-temperature,” in Proceedings of 11th International Conference on Group IV Photonics (IEEE, 2014) pp. 231–232.

Schiefler, G.

M. J. Suess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Analysis of enhanced light emission from highly strained germanium microbridges,” Nat. Photonics 7(6), 466–472 (2013).
[Crossref]

Schmid, M.

Schroeder, T.

Schulte-Braucks, C.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. Driesch, G. Mussler, T. Zabel, T. Stoica, J. Hartmann, S. Mantl, Z. Ikonic, D. Grutzmacher, H. Sigg, J. Witzens, and D. Buca, “Optically pumped GeSn microdisk lasers on Si,” ACS Photon. 3(7), 1279–1285 (2016).
[Crossref]

Schulze, J.

Seassal, C.

Shambat, G.

G. Shambat, S. Cheng, J. Lu, Y. Nishi, and J. Vuckovic, “Direct band Ge photoluminescence near 1.6 µ m coupled to Ge-on-Si microdisk resonators,” Appl. Phys. Lett. 97, 241102 (2010).
[Crossref]

Shiraki, Y.

X. Xu, X. Wang, K. Nishida, K. Takabayashi, K. Sawano, Y. Shiraki, H. Li, J. Liu, and T. Maruizumi, “Ultralarge transient optical gain from tensile-strained, n-doped germanium on silicon by spin-on dopant diffusion,” Appl. Phys. Express 8, 092101 (2015).
[Crossref]

K. Nishida, X. Xu, K. Sawano, T. Maruizumi, and Y. Shiraki, “Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy,” Thin Solid Films 557, 66–69 (2014).
[Crossref]

Y. Hoshi, K. Sawano, K. Hamaya, M. Miyao, and Y. Shiraki, “Formation of tensilely strained germanium-on-insulator,” Appl. Phys. Express 5, 015701 (2012).
[Crossref]

X. Xu, S. Narusawa, T. Chiba, T. Tsuboi, J. Xia, N. Usami, T. Maruizumi, and Y. Shiraki, “Silicon-based light-emitting devices based on Ge self-assembled quantum dots embedded in optical cavities,” IEEE J. Sel. Top. Quantum Electron. 18(6), 1830–1838 (2012).
[Crossref]

J. S. Xia, Y. Ikegami, K. Nemoto, and Y. Shiraki, “Observation of whispering-gallery modes in Si microdisks at room temperature,” Appl. Phys. Lett. 90, 141102 (2007).
[Crossref]

X. Xu, K. Nishida, K. Sawano, T. Maruizumi, and Y. Shiraki, “Resonant photoluminescence from microdisk based on n-doped, tensile-strained Ge on Si,” presented at International Conference on Solid State Devices and MaterialsFukuoka, Japan, 24–27, Sept. 2013

X. Xu, K. Sawano, T. Maruizumi, and Y. Shiraki, “Resonant light emission from n-doped Germanium-on-Insulator microdisks at room-temperature,” in Proceedings of 11th International Conference on Group IV Photonics (IEEE, 2014) pp. 231–232.

Sigg, H.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. Driesch, G. Mussler, T. Zabel, T. Stoica, J. Hartmann, S. Mantl, Z. Ikonic, D. Grutzmacher, H. Sigg, J. Witzens, and D. Buca, “Optically pumped GeSn microdisk lasers on Si,” ACS Photon. 3(7), 1279–1285 (2016).
[Crossref]

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grutzmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]

M. J. Suess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Analysis of enhanced light emission from highly strained germanium microbridges,” Nat. Photonics 7(6), 466–472 (2013).
[Crossref]

Skorupa, W.

S. Prucnal, F. Liu, M. Voelskow, L. Vines, L. Rebohle, D. Lang, Y. Berencen, S. Andric, R. Boettger, M. Helm, S. Zhou, and W. Skorupa, “Ultra-doped n-type germanium thin films for sensing in the mid-infrared,” Sci. Rep. 6, 27643 (2016).
[Crossref] [PubMed]

Soref, R. A.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S. Yu, “An optically pumped 2.5 µ m GeSn laser on Si operating at 110K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Spolenak, R.

M. J. Suess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Analysis of enhanced light emission from highly strained germanium microbridges,” Nat. Photonics 7(6), 466–472 (2013).
[Crossref]

Stange, D.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. Driesch, G. Mussler, T. Zabel, T. Stoica, J. Hartmann, S. Mantl, Z. Ikonic, D. Grutzmacher, H. Sigg, J. Witzens, and D. Buca, “Optically pumped GeSn microdisk lasers on Si,” ACS Photon. 3(7), 1279–1285 (2016).
[Crossref]

Stoica, T.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. Driesch, G. Mussler, T. Zabel, T. Stoica, J. Hartmann, S. Mantl, Z. Ikonic, D. Grutzmacher, H. Sigg, J. Witzens, and D. Buca, “Optically pumped GeSn microdisk lasers on Si,” ACS Photon. 3(7), 1279–1285 (2016).
[Crossref]

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grutzmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]

Su, M. Y.

M. Y. Su and R. P. Mirin, “Enhanced light extraction from circular Bragg grating coupled microcavities,” Appl. Phys. Lett. 89, 033105 (2006).
[Crossref]

Suess, M. J.

M. J. Suess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Analysis of enhanced light emission from highly strained germanium microbridges,” Nat. Photonics 7(6), 466–472 (2013).
[Crossref]

Sun, G.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S. Yu, “An optically pumped 2.5 µ m GeSn laser on Si operating at 110K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Sun, X.

Takabayashi, K.

X. Xu, X. Wang, K. Nishida, K. Takabayashi, K. Sawano, Y. Shiraki, H. Li, J. Liu, and T. Maruizumi, “Ultralarge transient optical gain from tensile-strained, n-doped germanium on silicon by spin-on dopant diffusion,” Appl. Phys. Express 8, 092101 (2015).
[Crossref]

Takeuchi, S.

Y. Moriyama, K. Ikeda, S. Takeuchi, Y. Kamimuta, Y. Nakamura, K. Izunome, A. Sakai, and T. Tezuka, “Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers,” Appl. Phys. Express 7, 086501 (2014).
[Crossref]

Takita, S.

P. H. Lim, Y. Kobayashi, S. Takita, Y. Ishikawa, and K. Wada, “Enhanced photoluminescence from germanium-based ring resonators,” Appl. Phys. Lett. 93, 041103 (2008).
[Crossref]

Tezuka, T.

Y. Moriyama, K. Ikeda, S. Takeuchi, Y. Kamimuta, Y. Nakamura, K. Izunome, A. Sakai, and T. Tezuka, “Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers,” Appl. Phys. Express 7, 086501 (2014).
[Crossref]

Tillack, B.

Tolle, J.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S. Yu, “An optically pumped 2.5 µ m GeSn laser on Si operating at 110K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Tsuboi, T.

X. Xu, S. Narusawa, T. Chiba, T. Tsuboi, J. Xia, N. Usami, T. Maruizumi, and Y. Shiraki, “Silicon-based light-emitting devices based on Ge self-assembled quantum dots embedded in optical cavities,” IEEE J. Sel. Top. Quantum Electron. 18(6), 1830–1838 (2012).
[Crossref]

Usami, N.

X. Xu, S. Narusawa, T. Chiba, T. Tsuboi, J. Xia, N. Usami, T. Maruizumi, and Y. Shiraki, “Silicon-based light-emitting devices based on Ge self-assembled quantum dots embedded in optical cavities,” IEEE J. Sel. Top. Quantum Electron. 18(6), 1830–1838 (2012).
[Crossref]

Van Campenhout, J.

Van Thourhout, D.

Verstuyft, S.

Vines, L.

S. Prucnal, F. Liu, M. Voelskow, L. Vines, L. Rebohle, D. Lang, Y. Berencen, S. Andric, R. Boettger, M. Helm, S. Zhou, and W. Skorupa, “Ultra-doped n-type germanium thin films for sensing in the mid-infrared,” Sci. Rep. 6, 27643 (2016).
[Crossref] [PubMed]

Virgilio, M.

Voelskow, M.

S. Prucnal, F. Liu, M. Voelskow, L. Vines, L. Rebohle, D. Lang, Y. Berencen, S. Andric, R. Boettger, M. Helm, S. Zhou, and W. Skorupa, “Ultra-doped n-type germanium thin films for sensing in the mid-infrared,” Sci. Rep. 6, 27643 (2016).
[Crossref] [PubMed]

von den Driesch, N.

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grutzmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]

Vuckovic, J.

G. Shambat, S. Cheng, J. Lu, Y. Nishi, and J. Vuckovic, “Direct band Ge photoluminescence near 1.6 µ m coupled to Ge-on-Si microdisk resonators,” Appl. Phys. Lett. 97, 241102 (2010).
[Crossref]

Wada, K.

P. H. Lim, Y. Kobayashi, S. Takita, Y. Ishikawa, and K. Wada, “Enhanced photoluminescence from germanium-based ring resonators,” Appl. Phys. Lett. 93, 041103 (2008).
[Crossref]

H. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]

Wang, X.

X. Xu, X. Wang, K. Nishida, K. Takabayashi, K. Sawano, Y. Shiraki, H. Li, J. Liu, and T. Maruizumi, “Ultralarge transient optical gain from tensile-strained, n-doped germanium on silicon by spin-on dopant diffusion,” Appl. Phys. Express 8, 092101 (2015).
[Crossref]

J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si,” Opt. Express 15(18), 11272–11277 (2007).
[Crossref] [PubMed]

White, J. S.

Widmann, D.

Wirths, S.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. Driesch, G. Mussler, T. Zabel, T. Stoica, J. Hartmann, S. Mantl, Z. Ikonic, D. Grutzmacher, H. Sigg, J. Witzens, and D. Buca, “Optically pumped GeSn microdisk lasers on Si,” ACS Photon. 3(7), 1279–1285 (2016).
[Crossref]

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grutzmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
[Crossref]

Witzens, J.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. Driesch, G. Mussler, T. Zabel, T. Stoica, J. Hartmann, S. Mantl, Z. Ikonic, D. Grutzmacher, H. Sigg, J. Witzens, and D. Buca, “Optically pumped GeSn microdisk lasers on Si,” ACS Photon. 3(7), 1279–1285 (2016).
[Crossref]

Xia, J.

X. Xu, S. Narusawa, T. Chiba, T. Tsuboi, J. Xia, N. Usami, T. Maruizumi, and Y. Shiraki, “Silicon-based light-emitting devices based on Ge self-assembled quantum dots embedded in optical cavities,” IEEE J. Sel. Top. Quantum Electron. 18(6), 1830–1838 (2012).
[Crossref]

Xia, J. S.

J. S. Xia, Y. Ikegami, K. Nemoto, and Y. Shiraki, “Observation of whispering-gallery modes in Si microdisks at room temperature,” Appl. Phys. Lett. 90, 141102 (2007).
[Crossref]

Xu, X.

X. Xu, H. Hashimoto, K. Yoshida, K. Sawano, and T. Maruizumi, “High Q-factor resonant photoluminescence from Ge-on-Insulator microdisks,” Proc. SPIE 9891, 98910V (2016).
[Crossref]

X. Xu, X. Wang, K. Nishida, K. Takabayashi, K. Sawano, Y. Shiraki, H. Li, J. Liu, and T. Maruizumi, “Ultralarge transient optical gain from tensile-strained, n-doped germanium on silicon by spin-on dopant diffusion,” Appl. Phys. Express 8, 092101 (2015).
[Crossref]

K. Nishida, X. Xu, K. Sawano, T. Maruizumi, and Y. Shiraki, “Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy,” Thin Solid Films 557, 66–69 (2014).
[Crossref]

X. Xu, S. Narusawa, T. Chiba, T. Tsuboi, J. Xia, N. Usami, T. Maruizumi, and Y. Shiraki, “Silicon-based light-emitting devices based on Ge self-assembled quantum dots embedded in optical cavities,” IEEE J. Sel. Top. Quantum Electron. 18(6), 1830–1838 (2012).
[Crossref]

X. Xu, K. Sawano, T. Maruizumi, and Y. Shiraki, “Resonant light emission from n-doped Germanium-on-Insulator microdisks at room-temperature,” in Proceedings of 11th International Conference on Group IV Photonics (IEEE, 2014) pp. 231–232.

X. Xu, K. Nishida, K. Sawano, T. Maruizumi, and Y. Shiraki, “Resonant photoluminescence from microdisk based on n-doped, tensile-strained Ge on Si,” presented at International Conference on Solid State Devices and MaterialsFukuoka, Japan, 24–27, Sept. 2013

Yamamoto, Y.

Yariv, A.

Yoshida, K.

X. Xu, H. Hashimoto, K. Yoshida, K. Sawano, and T. Maruizumi, “High Q-factor resonant photoluminescence from Ge-on-Insulator microdisks,” Proc. SPIE 9891, 98910V (2016).
[Crossref]

Yu, S.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S. Yu, “An optically pumped 2.5 µ m GeSn laser on Si operating at 110K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Zabel, T.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. Driesch, G. Mussler, T. Zabel, T. Stoica, J. Hartmann, S. Mantl, Z. Ikonic, D. Grutzmacher, H. Sigg, J. Witzens, and D. Buca, “Optically pumped GeSn microdisk lasers on Si,” ACS Photon. 3(7), 1279–1285 (2016).
[Crossref]

Zhou, S.

S. Prucnal, F. Liu, M. Voelskow, L. Vines, L. Rebohle, D. Lang, Y. Berencen, S. Andric, R. Boettger, M. Helm, S. Zhou, and W. Skorupa, “Ultra-doped n-type germanium thin films for sensing in the mid-infrared,” Sci. Rep. 6, 27643 (2016).
[Crossref] [PubMed]

Zhou, Y.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S. Yu, “An optically pumped 2.5 µ m GeSn laser on Si operating at 110K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

ACS Photon. (1)

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. Driesch, G. Mussler, T. Zabel, T. Stoica, J. Hartmann, S. Mantl, Z. Ikonic, D. Grutzmacher, H. Sigg, J. Witzens, and D. Buca, “Optically pumped GeSn microdisk lasers on Si,” ACS Photon. 3(7), 1279–1285 (2016).
[Crossref]

Appl. Phys. Express (3)

Y. Hoshi, K. Sawano, K. Hamaya, M. Miyao, and Y. Shiraki, “Formation of tensilely strained germanium-on-insulator,” Appl. Phys. Express 5, 015701 (2012).
[Crossref]

X. Xu, X. Wang, K. Nishida, K. Takabayashi, K. Sawano, Y. Shiraki, H. Li, J. Liu, and T. Maruizumi, “Ultralarge transient optical gain from tensile-strained, n-doped germanium on silicon by spin-on dopant diffusion,” Appl. Phys. Express 8, 092101 (2015).
[Crossref]

Y. Moriyama, K. Ikeda, S. Takeuchi, Y. Kamimuta, Y. Nakamura, K. Izunome, A. Sakai, and T. Tezuka, “Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers,” Appl. Phys. Express 7, 086501 (2014).
[Crossref]

Appl. Phys. Lett. (12)

M. Y. Su and R. P. Mirin, “Enhanced light extraction from circular Bragg grating coupled microcavities,” Appl. Phys. Lett. 89, 033105 (2006).
[Crossref]

M. El Kurdi, M. Prost, A. Ghrib, A. Elbaz, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, F. Boeuf, and P. Boucaud, “Tensile-strained germanium microdisks with circular Bragg reflectors,” Appl. Phys. Lett. 108, 091103 (2016).
[Crossref]

R. Camacho-Aguilera, Z. Han, Y. Cai, L. C. Kimerling, and J. Michel, “Direct band gap narrowing in highly doped Ge,” Appl. Phys. Lett. 102, 152106 (2013).
[Crossref]

J. S. Xia, Y. Ikegami, K. Nemoto, and Y. Shiraki, “Observation of whispering-gallery modes in Si microdisks at room temperature,” Appl. Phys. Lett. 90, 141102 (2007).
[Crossref]

P. H. Lim, Y. Kobayashi, S. Takita, Y. Ishikawa, and K. Wada, “Enhanced photoluminescence from germanium-based ring resonators,” Appl. Phys. Lett. 93, 041103 (2008).
[Crossref]

G. Shambat, S. Cheng, J. Lu, Y. Nishi, and J. Vuckovic, “Direct band Ge photoluminescence near 1.6 µ m coupled to Ge-on-Si microdisk resonators,” Appl. Phys. Lett. 97, 241102 (2010).
[Crossref]

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H. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
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Front. Mater. (1)

A. Z. Al-Attili, S. Kako, M. K. Husain, F. Y. Gardes, N. Higashitarumizu, S. Iwamoto, Y. Arakawa, Y. Ishikawa, H. Arimoto, K. Oda, and S. Saito, “Whispering galler mode resonances from Ge micro-disks on suspended beams,” Front. Mater. 2, 00043 (2015).
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IEEE J. Sel. Top. Quantum Electron. (1)

X. Xu, S. Narusawa, T. Chiba, T. Tsuboi, J. Xia, N. Usami, T. Maruizumi, and Y. Shiraki, “Silicon-based light-emitting devices based on Ge self-assembled quantum dots embedded in optical cavities,” IEEE J. Sel. Top. Quantum Electron. 18(6), 1830–1838 (2012).
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Nat. Photonics (3)

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grutzmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9(2), 88–92 (2015).
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J. R. Jain, A. Hryciw, T. M. Baer, D. A. B. Miller, M. L. Brongersma, and R. T. Howe, “A micromachining-based technology for enhancing germanium light emission via tensile strain,” Nat. Photonics 6(6), 398–405 (2012).
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M. J. Suess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Analysis of enhanced light emission from highly strained germanium microbridges,” Nat. Photonics 7(6), 466–472 (2013).
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Opt. Express (8)

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R. Koerner, M. Oehme, M. Gollhofer, M. Schmid, K. Kostecki, S. Bechler, D. Widmann, E. Kasper, and J. Schulze, “Electrically pumped lasing from Ge Fabry-Perot resonators on Si,” Opt. Express 23(11), 14815–14822 (2015).
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A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006).
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Opt. Lett. (1)

Opt. Mater. Express (1)

Proc. SPIE (1)

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Sci. Rep. (1)

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Figures (6)

Fig. 1
Fig. 1 (a) Cross-section TEM image of n-doped GOI substrate. (b) Phosphorus doping profile measured by SIMS. Inset shows the doping profile in linear scale. (c) Room-temperature PL spectra of undoped and n-doped GOI. The pump laser is a 980 nm laser and the power is 1 mW.
Fig. 2
Fig. 2 SEM images of (a) a normal microdisk and (b) a microdisk with circular Bragg grating, both with diameters of 8 µm. (c) is the zoomed-view of the grating with a period of 400 nm.
Fig. 3
Fig. 3 Room-temperature PL spectra of n-doped GOI (a) MD and (b) MDCBG, with pump laser power of 10 mW; Low-temperature (T=29 K) PL spectra of n-doped GOI (c) MD and (d) MDCBG, with pump laser power of 30 mW.
Fig. 4
Fig. 4 Extracted half round trip transmittance Rexp(−αD) of n-doped GOI MD and MDCBG, from LT PL spectra.
Fig. 5
Fig. 5 (a) LT PL spectra of MDCBGs (solid line) and simulated reflectivity spectra (dashed line) of Bragg gratings with different grating periods. (b) Calculated majority electric field intensity profiles of the resonant modes at 1.64 µm in the form of log10(E2). (c)–(f) are calculated far-field patterns of the corresponding resonant modes for different grating periods: (c) a=280 nm, (d) a=320 nm, (e) a=360 nm, and (f) a=400 nm. A zoomed view of the far-field pattern is also shown in the inset of (c).
Fig. 6
Fig. 6 (a) Low-temperature (29 K) PL spectra of n-doped GOI MDCBG under different pump power. The spectra were each offset by 2000 along the vertical axis for visibility. (b) Resonant wavelength and extracted Rexp(−αD) of the resonant peak around 1.65 µm under different pump power.

Equations (2)

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I = C 1 + R 2 exp ( 2 α D ) 2 R exp ( α D ) cos ( 4 π λ n D ) .
g t h r e s h o l d = α 1 D ln ( R ) = 1 D ln [ R exp ( α D ) ]

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