Tin diselenide as a new saturable absorber for generation of laser pulses at 1μm

Chen Cheng; Ziqi Li; Ningning Dong; Jun Wang; Feng Chen

doi:10.1364/OE.25.006132

Tin diselenide as a new saturable absorber for generation of laser pulses at 1μm

Chen Cheng, Ziqi Li, Ningning Dong, Jun Wang, and Feng Chen

Optics Express
Vol. 25,
Issue 6,
pp. 6132-6140
(2017)
•https://doi.org/10.1364/OE.25.006132

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Chen Cheng, Ziqi Li, Ningning Dong, Jun Wang, and Feng Chen, "Tin diselenide as a new saturable absorber for generation of laser pulses at 1μm," Opt. Express 25, 6132-6140 (2017)

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Related Topics
Table of Contents Category
- Materials
Optics & Photonics Topics
?

The topics in this list come from the OSA Optics and Photonics Topics applied to this article.
Previously assigned OCIS codes
- Lasers, Q-switched (140.3540)
- Semiconductor materials (160.6000)
- Ultrafast nonlinear optics (190.7110)

About this Article
History
- Original Manuscript: January 24, 2017
- Revised Manuscript: March 1, 2017
- Manuscript Accepted: March 4, 2017
- Published: March 8, 2017

Accessible

Open Access

Abstract

The nonlinear optical responses of two-dimensional (2D) few-layer tin diselenide (SnSe₂) have been investigated in this work. By applying the Z-scan technique, the saturable absorption of SnSe₂ thin film has been observed at a wavelength of ~1μm, which enables SnSe_2, a new saturable absorber for pulsed laser generation. A detailed exploration of the nonlinear absorption of SnSe₂ film and their dependence on excitation pulse energy is carried out. Our results show that saturation intensity of the nonlinear absorption is ~23.78 GW/cm² and corresponding nonlinear absorption coefficients are at a range from −13596 to −2967.3 cm/GW. By employing the SnSe₂-coated mirror as a saturable absorber, the passively Q-switched lasing has been achieved on a crystalline waveguide platform at ~1 μm.

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References

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[Crossref]
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[Crossref] [PubMed]
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[Crossref] [PubMed]
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[Crossref]
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[Crossref] [PubMed]
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[Crossref] [PubMed]
L. C. Oliveira, T. Catunda, and C. Zilio, “Saturation effects in Z-scan measurements,” Jpn. J. Appl. Phys. 35(5A), 2649–2652 (1996).
[Crossref]
U. Keller, K. J. Weingarten, F. X. Kartner, D. Kopf, B. Braun, I. D. Jung, and J. A. Der Au, “Semiconductor saturable absorber mirrors (SESAM’s) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron. 2(3), 435–453 (1996).
[Crossref]

2017 (2)

Z. T. Wang, H. R. Mu, J. Yuan, C. J. Zhao, Q. L. Bao, and H. Zhang, “Graphene-Bi2Te3 heterostructure as broadband saturable absorber for ultra-short pulse generation in Er-doped and Yb-doped fiber lasers,” IEEE J. Sel. Top. Quantum Electron. 23(1), 8800105 (2017).
[Crossref]

Y. Ding, B. Xiao, G. Tang, and J. Hong, “Transport Properties and High Thermopower of SnSe2: A Full Ab-Initio Investigation,” J. Phys. Chem. C 121(1), 225–236 (2017).
[Crossref]

2016 (14)

C. Cheng, H. L. Liu, Z. Shang, W. J. Nie, Y. Tan, B. R. Rabes, J. R. Vázquez de Aldana, D. Jaque, and F. Chen, “Femtosecond laser written waveguides with MoS2 as satuable absorber for passively Q-switched lasing,” Opt. Mater. Express 6(2), 367 (2016).
[Crossref]

Y. Tan, Z. Guo, L. Ma, H. Zhang, S. Akhmadaliev, S. Zhou, and F. Chen, “Q-switched waveguide laser based on two-dimensional semiconducting materials: tungsten disulfide and black phosphorous,” Opt. Express 24(3), 2858–2866 (2016).
[Crossref] [PubMed]

C. Cheng, H. Liu, Y. Tan, J. R. Vázquez de Aldana, and F. Chen, “Passively Q-switched waveguide lasers based on two-dimensional transition metal diselenide,” Opt. Express 24(10), 10385–10390 (2016).
[Crossref] [PubMed]

Y. Li, N. Dong, S. Zhang, K. Wang, L. Zhang, and J. Wang, “Optical identification of layered MoS2 via the characteristic matrix method,” Nanoscale 8(2), 1210–1215 (2016).
[Crossref] [PubMed]

Z. P. Sun, A. Martinez, and F. Wang, “Optical modulators with 2D layered materials,” Nat. Photonics 10(4), 227–238 (2016).
[Crossref]

W. J. Zhang, Q. X. Wang, Y. Chen, Z. Wang, and A. T. S. Wee, “Van der Waals stacked 2D layered materials for optoelectronics,” 2D. Mater. 3(2), 022001 (2016).
[Crossref]

J. P. Shi, Q. Q. Ji, Z. F. Liu, and Y. F. Zhang, “Recent Advances in Controlling Syntheses and Energy Related Applications of MX2 and MX2/Graphene Heterostructures,” Adv. Energy Mater. 6(17), 1600459 (2016).
[Crossref]

K. E. Aretouli, D. Tsoutsou, P. Tsipas, J. Marquez-Velasco, S. Aminalragia Giamini, N. Kelaidis, V. Psycharis, and A. Dimoulas, “Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures,” ACS Appl. Mater. Interfaces 8(35), 23222–23229 (2016).
[Crossref] [PubMed]

P. Yu, X. C. Yu, W. L. Lu, H. Lin, L. F. Sun, K. Z. Du, F. C. Liu, W. Fu, Q. S. Zeng, Z. X. Shen, C. H. Jin, Q. J. Wang, and Z. Liu, “Fast photoresponse from 1T Tin Diselenide atomic layers,” Adv. Funct. Mater. 26(1), 137–145 (2016).
[Crossref]

S. C. Dhanabalan, J. S. Ponraj, H. Zhang, and Q. Bao, “Present perspectives of broadband photodetectors based on nanobelts, nanoribbons, nanosheets and the emerging 2D materials,” Nanoscale 8(12), 6410–6434 (2016).
[Crossref] [PubMed]

J. M. Gonzalez and I. I. Oleynik, “Layer-dependent properties of SnS2 and SnSe2 two-dimensional materials,” Phys. Rev. B 94(12), 125443 (2016).
[Crossref]

Y. W. Wang, H. R. Mu, X. H. Li, J. Yuan, J. Z. Chen, S. Xiao, Q. L. Bao, Y. L. Gao, and J. He, “Observation of large nonlinear responses in a graphene-Bi2Te3 heterostructure at a telecommunication wavelength,” Appl. Phys. Lett. 108(22), 221901 (2016).
[Crossref]

F. Hipolito, T. G. Pedersen, and V. M. Pereira, “Nonlinear photocurrents in two-dimensional systems based on graphene and boron nitride,” Phys. Rev. B 94(4), 045434 (2016).
[Crossref]

K. Wang, B. M. Szydłowska, G. Wang, X. Zhang, J. J. Wang, J. J. Magan, L. Zhang, J. N. Coleman, J. Wang, and W. J. Blau, “Ultrafast nonlinear excitation dynamics of black phosphorus nanosheets from visible to mid-infrared,” ACS Nano 10(7), 6923–6932 (2016).
[Crossref] [PubMed]

2015 (7)

Z. N. Guo, H. Zhang, S. B. Lu, Z. T. Wang, S. Y. Tang, J. D. Shao, Z. B. Sun, H. H. Xie, H. Y. Wang, X. F. Yu, and P. K. Chu, “From black phosphorus to phosphorene: basic solvent exfoliation, evolution of raman scattering, and applications to ultrafast photonics,” Adv. Funct. Mater. 25(45), 6996–7002 (2015).
[Crossref]

A. Gupta, T. Sakthivel, and S. Seal, “Recent development in 2D materials beyond graphene,” Prog. Mater. Sci. 73, 44–126 (2015).
[Crossref]

X. Zhou, L. Gan, W. Tian, Q. Zhang, S. Jin, H. Li, Y. Bando, D. Golberg, and T. Zhai, “Ultrathin SnSe2 flakes grown by chemical vapor deposition for high-performance photodetectors,” Adv. Mater. 27(48), 8035–8041 (2015).
[Crossref] [PubMed]

A. Taube, A. Łapinska, J. Judek, and M. Zdrojekc, “Temperature dependence of Raman shifts in layered ReSe2 and SnSe2 semiconductor nanosheets,” Appl. Phys. Lett. 107(1), 013105 (2015).
[Crossref]

N. Dong, Y. Li, Y. Feng, S. Zhang, X. Zhang, C. Chang, J. Fan, L. Zhang, and J. Wang, “Optical limiting and theoretical modelling of layered transition metal dichalcogenide nanosheets,” Sci. Rep. 5, 14646 (2015).
[Crossref] [PubMed]

S. B. Lu, L. L. Miao, Z. N. Guo, X. Qi, C. J. Zhao, H. Zhang, S. C. Wen, D. Y. Tang, and D. Y. Fan, “Broadband nonlinear optical response in multi-layer black phosphorus: an emerging infrared and mid-infrared optical material,” Opt. Express 23(9), 11183–11194 (2015).
[Crossref] [PubMed]

S. Zhang, N. Dong, N. McEvoy, M. O’Brien, S. Winters, N. C. Berner, C. Yim, Y. Li, X. Zhang, Z. Chen, L. Zhang, G. S. Duesberg, and J. Wang, “Direct observation of degenerate two-photon absorption and its saturation in WS2 and MoS2 monolayer and few-layer films,” ACS Nano 9(7), 7142–7150 (2015).
[Crossref] [PubMed]

2014 (4)

D. Jariwala, V. K. Sangwan, L. J. Lauhon, T. J. Marks, and M. C. Hersam, “Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides,” ACS Nano 8(2), 1102–1120 (2014).
[Crossref] [PubMed]

J. Du, Q. Wang, G. Jiang, C. Xu, C. Zhao, Y. Xiang, Y. Chen, S. Wen, and H. Zhang, “Ytterbium-doped fiber laser passively mode locked by few-layer Molybdenum Disulfide (MoS2) saturable absorber functioned with evanescent field interaction,” Sci. Rep. 4, 6346 (2014).
[Crossref] [PubMed]

C. Zhang, H. Yin, M. Han, Z. Dai, H. Pang, Y. Zheng, Y. Q. Lan, J. Bao, and J. Zhu, “Two-dimensional tin selenide nanostructures for flexible all-solid-state supercapacitors,” ACS Nano 8(4), 3761–3770 (2014).
[Crossref] [PubMed]

C. Y. Ling, Y. C. Huang, H. Liu, S. F. Wang, Z. Fang, and L. X. Ning, “Mechanical properties, electronic structures, and potential applications in lithium ion batteries: a first-principles study toward SnSe2 nanotubes,” J. Phys. Chem. C 118(48), 28291–28298 (2014).
[Crossref]

2013 (2)

S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, challenges, and opportunities in two-dimensional materials beyond graphene,” ACS Nano 7(4), 2898–2926 (2013).
[Crossref] [PubMed]

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
[Crossref] [PubMed]

2012 (2)

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7(11), 699–712 (2012).
[Crossref] [PubMed]

X. Yu, J. Zhu, Y. Zhang, J. Weng, L. Hu, and S. Dai, “SnSe2 quantum dot sensitized solar cells prepared employing molecular metal chalcogenide as precursors,” Chem. Commun. (Camb.) 48(27), 3324–3326 (2012).
[Crossref] [PubMed]

2011 (1)

R. Y. Wang, M. A. Caldwell, R. G. D. Jeyasingh, S. Aloni, R. M. Shelby, H.-S. P. Wong, and D. J. Milliron, “Electronic and optical switching of solution-phase deposited SnSe2 phase change memory material,” J. Appl. Phys. 109(11), 113506 (2011).
[Crossref]

2010 (1)

F. Bonaccorso, Z. Sun, T. Hasan, and A. C. Ferrari, “Graphene photonics and optoelectronics,” Nat. Photonics 4(9), 611–622 (2010).
[Crossref]

2007 (1)

A. K. Geim and K. S. Novoselov, “The rise of graphene,” Nat. Mater. 6(3), 183–191 (2007).
[Crossref] [PubMed]

2004 (1)

K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306(5696), 666–669 (2004).
[Crossref] [PubMed]

1996 (2)

L. C. Oliveira, T. Catunda, and C. Zilio, “Saturation effects in Z-scan measurements,” Jpn. J. Appl. Phys. 35(5A), 2649–2652 (1996).
[Crossref]

U. Keller, K. J. Weingarten, F. X. Kartner, D. Kopf, B. Braun, I. D. Jung, and J. A. Der Au, “Semiconductor saturable absorber mirrors (SESAM’s) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron. 2(3), 435–453 (1996).
[Crossref]

Akhmadaliev, S.

Aloni, S.

Aminalragia Giamini, S.

Aretouli, K. E.

Bando, Y.

Bao, J.

Bao, Q.

Bao, Q. L.

Berner, N. C.

Blau, W. J.

Bonaccorso, F.

F. Bonaccorso, Z. Sun, T. Hasan, and A. C. Ferrari, “Graphene photonics and optoelectronics,” Nat. Photonics 4(9), 611–622 (2010).
[Crossref]

Braun, B.

Butler, S. Z.

Caldwell, M. A.

Cao, L.

Catunda, T.

L. C. Oliveira, T. Catunda, and C. Zilio, “Saturation effects in Z-scan measurements,” Jpn. J. Appl. Phys. 35(5A), 2649–2652 (1996).
[Crossref]

Chang, C.

Chen, F.

Chen, J. Z.

Chen, Y.

W. J. Zhang, Q. X. Wang, Y. Chen, Z. Wang, and A. T. S. Wee, “Van der Waals stacked 2D layered materials for optoelectronics,” 2D. Mater. 3(2), 022001 (2016).
[Crossref]

Chen, Z.

Cheng, C.

Chu, P. K.

Coleman, J. N.

Cui, Y.

Dai, S.

Dai, Z.

Der Au, J. A.

Dhanabalan, S. C.

Dimoulas, A.

Ding, Y.

Y. Ding, B. Xiao, G. Tang, and J. Hong, “Transport Properties and High Thermopower of SnSe2: A Full Ab-Initio Investigation,” J. Phys. Chem. C 121(1), 225–236 (2017).
[Crossref]

Dong, N.

Y. Li, N. Dong, S. Zhang, K. Wang, L. Zhang, and J. Wang, “Optical identification of layered MoS2 via the characteristic matrix method,” Nanoscale 8(2), 1210–1215 (2016).
[Crossref] [PubMed]

Du, J.

Du, K. Z.

Dubonos, S. V.

Duesberg, G. S.

Fan, D. Y.

Fan, J.

Fang, Z.

Feng, Y.

Ferrari, A. C.

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2D. Mater. (1)

W. J. Zhang, Q. X. Wang, Y. Chen, Z. Wang, and A. T. S. Wee, “Van der Waals stacked 2D layered materials for optoelectronics,” 2D. Mater. 3(2), 022001 (2016).
[Crossref]

ACS Appl. Mater. Interfaces (1)

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Adv. Energy Mater. (1)

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Appl. Phys. Lett. (2)

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IEEE J. Sel. Top. Quantum Electron. (2)

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J. Phys. Chem. C (2)

Y. Ding, B. Xiao, G. Tang, and J. Hong, “Transport Properties and High Thermopower of SnSe2: A Full Ab-Initio Investigation,” J. Phys. Chem. C 121(1), 225–236 (2017).
[Crossref]

Jpn. J. Appl. Phys. (1)

L. C. Oliveira, T. Catunda, and C. Zilio, “Saturation effects in Z-scan measurements,” Jpn. J. Appl. Phys. 35(5A), 2649–2652 (1996).
[Crossref]

Nanoscale (2)

Y. Li, N. Dong, S. Zhang, K. Wang, L. Zhang, and J. Wang, “Optical identification of layered MoS2 via the characteristic matrix method,” Nanoscale 8(2), 1210–1215 (2016).
[Crossref] [PubMed]

Nat. Mater. (1)

A. K. Geim and K. S. Novoselov, “The rise of graphene,” Nat. Mater. 6(3), 183–191 (2007).
[Crossref] [PubMed]

Nat. Nanotechnol. (1)

Nat. Photonics (2)

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[Crossref]

Opt. Express (3)

Opt. Mater. Express (1)

Phys. Rev. B (2)

J. M. Gonzalez and I. I. Oleynik, “Layer-dependent properties of SnS2 and SnSe2 two-dimensional materials,” Phys. Rev. B 94(12), 125443 (2016).
[Crossref]

F. Hipolito, T. G. Pedersen, and V. M. Pereira, “Nonlinear photocurrents in two-dimensional systems based on graphene and boron nitride,” Phys. Rev. B 94(4), 045434 (2016).
[Crossref]

Prog. Mater. Sci. (1)

A. Gupta, T. Sakthivel, and S. Seal, “Recent development in 2D materials beyond graphene,” Prog. Mater. Sci. 73, 44–126 (2015).
[Crossref]

Sci. Rep. (2)

Science (1)

Other (1)

A. V. Kolobov and J. Tominaga, Two-Dimensional Transition-Metal Dichalcogenides (Springer, 2016).

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Fig. 1 (a) AFM image of SnSe₂ thin film and measurement of height, (b) linear absorption as functions of wavelength and photon energy, corresponding to top and bottom axes.

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Fig. 2 (a) Schematic of in- and out-plane Raman modes, (b) measured Raman spectrum.

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Fig. 3 The schematic of the experimental setup of the Z-scan system in this work.

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Fig. 4 non-linear absorbance detected by the Z-scan system.

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Fig. 5 Fitting values of nonlinear coefficient β as functions of the different excitation irradiance, and their fitted curves.

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Fig. 6 Schematic of the experimental setup for the Q-switched waveguide laser generation; the insert is the SA of SnSe₂.

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Fig. 7 The average output power as a function of incident power (a), emission spectrum of Q-switched waveguide laser system (b), and the pulse trains output at (c) TE- and (d) TM-polarized light pump.

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Fig. 8 The Q-switched waveguide laser (a) parameters of repetition rates and pulse durations, and (b) values of pulse energy and peak power, in TE- and TM-polarization.

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Tables (1)

Table 1 Comparison of Q-switched Waveguide Lasers Based on Different 2D Materials

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Equations (4)

Equations on this page are rendered with MathJax. Learn more.

\frac{d I}{d z^{'}} = - α (I) I

α (I) = α_{0} + β I

α (I) = \frac{α_{0}}{1 + I / I_{S}}

E_{p} \approx \frac{h ν_{L}}{σ_{L}} V q η_{o u t}

	2D Materials
Parameters	SnSe₂	MoS₂ ^a	WS₂ ^b	MoSe₂ ^c	WSe₂ ^c	BP ^b
Lasing Threshold (mW)	287.0	260.0	90.0	189.7	275.1	100.0
Pulse Duration (ns)	129	203	24	86	52	55
Repetition Rate (MHz)	2.294	1.100	6.100	3.334	2.938	5.600
Single Pulse Energy (nJ)	44.5	89	-	35.9	19.0	-
Peak Power (W)	0.3	-	1.0	-	-	0.4
Modulation Depth	7.2%	-	1.8%	2.6%	4.9%	0.8%