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Resonant cavity enhanced waveguide transmission for broadband and high efficiency quarter-wave plate

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Abstract

Existing transmission type optical quarter-wave plates based on metallic sub-wavelength structures can hardly realize transmission efficiency above 60%. And their working bandwidths are still very narrow. In this paper, we demonstrate a transmission type quarter-wave plate design with efficiency above 92% over a broad wavelength range (from 1260 nm to 1560 nm). The device proposed is based on a one-dimensional metal-insulator-metal waveguide array buried in silica. Phase difference between transmitted TE and TM components can be tuned continuously. At the same time, transmission efficiency can be kept above 90% in the same spectral range for both the TE and TM incidences. The broad bandwidth and remarkable efficiency are explained with the combination of low dispersion of waveguide modes and the resonant cavity enhanced transmission effect. To give a better understanding of the structure, we also propose a modified effective medium model. The optical response of the structure can be well reproduced with the semi-analytic effective medium model.

© 2017 Optical Society of America

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Figures (7)

Fig. 1
Fig. 1 Schematic illustration of the quarter-wave plate’s structure. (a) 3D sketch of the structure. The periodicity of the structure in x-direction is P = 800 nm, the gap between neighboring silver strips is g = 650 nm, the width of the silver strip is w = 150 nm, and the height of the silver strip is t = 600 nm. (b) Profile of the structure in x-z plane.
Fig. 2
Fig. 2 (a) Transmittance spectra of the structure in Fig. 1 under TE incidence and TM incidence. (b) The phase difference between transmitted TE light and transmitted TM light, the shadowed region indicates the spectral range in which the phase difference is within 90° ± 10°.
Fig. 3
Fig. 3 Real part (a) and imaginary part (b) of the effective refractive index for TE and TM modes.
Fig. 4
Fig. 4 Field distribution at the FP resonance peak under TE (a) and TM (b) incidence. Transmittance spectra in dependence of metallic strip thickness t under TE (c) and TM (d) incidence. The transmittance spectra (e) and phase difference spectrum (f) with metallic strip thickness equal to 1500 nm.
Fig. 5
Fig. 5 (a) Three-layer dielectric material model for the structure in Fig. 1. Transmittance spectra (b) and phase difference spectrum (c) calculated with the transfer matrix with effective layer thickness set to be equal to the metallic strip thickness t = 600 nm.
Fig. 6
Fig. 6 Extra cavity length Δd estimated from Eq. (5) for TE incidence (a) and TM incidence (d), respectively. Transmittance (c) and phase difference (d) calculated with the semi-analytic model in comparison with the results from FEM simulations.
Fig. 7
Fig. 7 Spectral response for devices built with different metallic materials. (a) Transmittance under TE and TM incidence. (b) Phase difference between transmitted TE and TM field.

Equations (5)

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tan( g 2 k 0 2 ε d β TE 2 )= β TE 2 k 0 2 ε m k 0 2 ε d β TE 2
tanh( g 2 β TM 2 k 0 2 ε d )= ε d ε m β TM 2 k 0 2 ε m β TM 2 k 0 2 ε d .
n TE(TM) = β TE(TM) / k 0 .
M=( n 1 + n 2 2 n 1 n 1 n 2 2 n 1 n 1 n 2 2 n 1 n 1 + n 2 2 n 1 )*( e i 2π λ n 2 d 0 0 e i 2π λ n 2 d )*( n 2 + n 3 2 n 2 n 2 n 3 2 n 2 n 2 n 3 2 n 2 n 2 + n 3 2 n 2 )
Δd(λ)= λ 2 n 2 (λ) t FP (λ)
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