Abstract

We report the carrier dynamics and recombination coefficients in single-quantum-well semipolar (202¯1¯) InGaN/GaN light-emitting diodes emitting at 440 nm with 93% peak internal quantum efficiency. The differential carrier lifetime is analyzed for various injection current densities from 5 A/cm2 to 10 kA/cm2, and the corresponding carrier densities are obtained. The coupling of internal quantum efficiency and differential carrier lifetime vs injected carrier density (n) enables the separation of the radiative and nonradiative recombination lifetimes and the extraction of the Shockley-Read-Hall (SRH) nonradiative (A), radiative (B), and Auger (C) recombination coefficients and their n-dependency considering the saturation of the SRH recombination rate and phase-space filling. The results indicate a three to four-fold higher A and a nearly two-fold higher B0 for this semipolar orientation compared to that of c-plane reported using a similar approach [A. David and M. J. Grundmann, Appl. Phys. Lett. 96, 103504 (2010)]. In addition, the carrier density in semipolar (202¯1¯) is found to be lower than the carrier density in c-plane for a given current density, which is important for suppressing efficiency droop. The semipolar LED also shows a two-fold lower C0 compared to c-plane, which is consistent with the lower relative efficiency droop for the semipolar LED (57% vs. 69%). The lower carrier density, higher B0 coefficient, and lower C0 (Auger) coefficient are directly responsible for the high efficiency and low efficiency droop reported in semipolar (202¯1¯) LEDs.

© 2017 Optical Society of America

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    [Crossref]
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    [Crossref]
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    [Crossref]

2017 (5)

S. Okur, M. Nami, A. K. Rishinaramangalam, S. H. Oh, S. P. DenBaars, S. Liu, I. Brener, and D. F. Feezell, “Internal quantum efficiency and carrier dynamics in semipolar(202¯1¯) InGaN/GaN light-emitting diodes, ” Opt. Express 25(3), 2178–2186 (2017).
[Crossref]

A. Rashidi, M. Nami, M. Monavarian, A. Aragon, K. DaVico, F. Ayoub, S. Mishkat-Ul-Masabih, A. K. Rishinaramangalam, and D. Feezell, “Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes,” J. Appl. Phys. 122(3), 035706 (2017).
[Crossref]

A. Rashidi, M. Monavarian, A. Aragon, S. Okur, M. Nami, A. Rishinaramangalam, S. Mishkat-Ul-Masabih, and D. Feezell, “High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication,” IEEE Photonics Technol. Lett. 29(4), 381–384 (2017).
[Crossref]

D.-P. Han, J.-I. Shim, and D.-S. Shin, “Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurement,” Appl. Phys. Express 10(5), 052101 (2017).
[Crossref]

S. Rajbhandari, J. J. D. McKendry, J. Herrnsdorf, H. Chun, G. Faulkner, H. Haas, I. M. Watson, D. O’Brien, and M. D. Dawson, “A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications,” Semicond. Sci. Technol. 32(2), 023001 (2017).
[Crossref]

2016 (3)

R. X. G. Ferreira, E. Xie, J. J. D. McKendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications,” IEEE Photonics Technol. Lett. 28(19), 2023–2026 (2016).
[Crossref]

A. David, C. A. Hurni, N. G. Young, and M. D. Craven, “Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures,” Appl. Phys. Lett. 109(3), 033504 (2016).
[Crossref]

S. H. Oh, B. P. Yonkee, M. Cantore, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to ∼1 W,” Appl. Phys. Express 9(10), 102102 (2016).
[Crossref]

2015 (1)

E. Kioupakis, D. Steiauf, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “First-principles calculations of indirect Auger recombination in nitride semiconductors,” Phys. Rev. B 92(3), 035207 (2015).
[Crossref]

2014 (5)

T.-J. Yang, R. Shivaraman, J. S. Speck, and Y.-R. Wu, “The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior,” J. Appl. Phys. 116(11), 113104 (2014).
[Crossref]

Y. Zhao, F. Wu, T.-J. Yang, Y.-R. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells,” Appl. Phys. Express 7, 025503 (2014).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, and S. P. DenBaars, “Highly polarized photoluminescence and its dynamics in semipolar(202¯1¯) InGaN/GaN quantum well, ” Appl. Phys. Lett. 104, 111113 (2014).
[Crossref]

F. Wu, Y. Zhao, A. E. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking faults and interface roughening in semipolar(202¯1¯) single InGaN quantum wells for long wavelength emission, ” Appl. Phys. Lett. 104(15), 151901 (2014).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamaura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in semipolar(202¯1¯) InGaN/GaN quantum well, ” Appl. Phys. Lett. 104(11), 111113 (2014).
[Crossref]

2013 (5)

S. Marcinkevičius, Y. Zhao, K. M. Kelchner, S. Nakamaura, S. P. DenBaars, and J. S. Speck, “Near-field investigation of spatial variations of(202¯1¯) InGaN quantum well emission spectra, ” Appl. Phys. Lett. 103(13), 131116 (2013).
[Crossref]

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting,” J. Disp. Technol. 9, 190–198 (2013).
[Crossref]

E. Kioupakis, Q. Yan, D. Steiauf, and C. G. V. de Walle, “Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices,” New J. Phys. 15(12), 125006 (2013).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green Semipolar(202¯1¯) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth, ” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

R. Shivaraman, Y. Kawaguchi, S. Tanaka, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Comparative analysis of(202¯1¯)and(202¯1¯) semipolar GaN light emitting diodes using atom probe tomography, ” Appl. Phys. Lett. 102(25), 251104 (2013).
[Crossref]

2012 (8)

I. L. Koslow, M. T. Hardy, P. Shan Hsu, P.-Y. Dang, F. Wu, A. Romanov, Y.-R. Wu, E. C. Young, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers,” Appl. Phys. Lett. 101(12), 121106 (2012).
[Crossref]

E. Kioupakis, Q. Yan, and C. G. V. de Walle, “Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes,” Appl. Phys. Lett. 101(23), 231107 (2012).
[Crossref]

T. Melo, Y.-L. Hu, C. Weisbuch, M. C. Schmidt, A. David, B. Ellis, C. Poblenz, Y.-D. Lin, M. R. Krames, and J. W. Raring, “Gain comparison in polar and nonpolar/semipolar gallium-nitride-based laser diodes,” Semicond. Sci. Technol. 27(2), 024015 (2012).
[Crossref]

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamaura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

C.-C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar(202¯1¯) Blue Light- Emitting Diodes, ” Appl. Phys. Express 5(10), 102103 (2012).
[Crossref]

Y. Kawaguchi, C.-Y. Huang, Y.-R. Wu, Q. Yan, C.-C. Pan, Y. Zhao, S. Tanaka, K. Fujito, D. Feezell, C. G. V. de Walle, S. P. DenBaars, and S. Nakamaura, “Influence of polarity on carrier transport in semipolar(202¯1¯) and(202¯1¯) multiple-quantum-well light-emitting diodes, ” Appl. Phys. Lett. 100(23), 231110 (2012).
[Crossref]

C.-C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-Power, Low-Efficiency-Droop Semipolar(202¯1¯), ” Appl. Phys. Express 5(6), 062103 (2012).
[Crossref]

S.-H. Park and D. Ahn, “High optical polarization ratio of semipolar(202¯1¯) -oriented InGaN/GaN quantum wells and comparison with experiment, ” J. Appl. Phys. 112(9), 093106 (2012).
[Crossref]

2011 (4)

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) bluegreen InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

C.-Y. Huang, M. T. Hardy, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamaura, “Demonstration of 505 nm laser diodes using wavelength-stable semipolar(202¯1¯) InGaN/GaN quantum wells, ” Appl. Phys. Lett. 99(24), 241115 (2011).
[Crossref]

Y. Zhao, S. Tanaka, C.-C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Power Blue-Violet Semipolar(202¯1¯), ” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes,” Appl. Phys. Lett. 98(16), 161107 (2011).
[Crossref]

2010 (3)

A. David and M. J. Grundmann, “Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis,” Appl. Phys. Lett. 96(10), 103504 (2010).
[Crossref]

A. David and M. J. Grundmann, “Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes,” Appl. Phys. Lett. 97(3), 033501 (2010).
[Crossref]

H.-H. Huang and Y.-R. Wu, “Light emission polarization properties of semipolar InGaN/GaN quantum well,” J. Appl. Phys. 107(5), 053112 (2010).
[Crossref]

2008 (1)

S. Khatsevich and D. H. Rich, “The effects of crystallographic orientation and strain on the properties of excitonic emission from wurtzite InGaN/GaN quantum wells,” J. Phys. Condens. Matter 20(21), 215223 (2008).
[Crossref]

2004 (1)

A. Cuevas and D. Macdonald, “Measuring and interpreting the lifetime of silicon wafers,” Sol. Energy 76(1-3), 255–262 (2004).
[Crossref]

2002 (1)

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, G. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of c- and m-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130–4132 (2002).
[Crossref]

1999 (1)

P. G. Eliseev, M. Osinski, H. Li, and I. V. Akimova, “Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells,” Appl. Phys. Lett. 75(24), 3838–3840 (1999).
[Crossref]

1990 (1)

D. Huang, J.-I. Chyi, and H. Morkoç, “Carrier effects on the excitonic absorption in GaAs quantum-well structures: Phase-space filling,” Phys. Rev. B Condens. Matter 42(8), 5147–5153 (1990).
[Crossref] [PubMed]

1983 (1)

D. Yevick and W. Streifer, “Radiative and nonradiative recombination law in lightly doped InGaAsP lasers,” Electron. Lett. 19(24), 1012–1014 (1983).
[Crossref]

1952 (2)

W. Shockley and W. T. Read, “Statistics of the Recombinations of Holes and Electrons,” Phys. Rev. 87(5), 835–842 (1952).
[Crossref]

R. N. Hall, “Electron-Hole Recombination in Germanium,” Phys. Rev. 87(2), 387 (1952).
[Crossref]

Ahn, D.

S.-H. Park and D. Ahn, “High optical polarization ratio of semipolar(202¯1¯) -oriented InGaN/GaN quantum wells and comparison with experiment, ” J. Appl. Phys. 112(9), 093106 (2012).
[Crossref]

Akimova, I. V.

P. G. Eliseev, M. Osinski, H. Li, and I. V. Akimova, “Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells,” Appl. Phys. Lett. 75(24), 3838–3840 (1999).
[Crossref]

Aragon, A.

A. Rashidi, M. Nami, M. Monavarian, A. Aragon, K. DaVico, F. Ayoub, S. Mishkat-Ul-Masabih, A. K. Rishinaramangalam, and D. Feezell, “Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes,” J. Appl. Phys. 122(3), 035706 (2017).
[Crossref]

A. Rashidi, M. Monavarian, A. Aragon, S. Okur, M. Nami, A. Rishinaramangalam, S. Mishkat-Ul-Masabih, and D. Feezell, “High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication,” IEEE Photonics Technol. Lett. 29(4), 381–384 (2017).
[Crossref]

Asif Khan, M.

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, G. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of c- and m-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130–4132 (2002).
[Crossref]

Ayoub, F.

A. Rashidi, M. Nami, M. Monavarian, A. Aragon, K. DaVico, F. Ayoub, S. Mishkat-Ul-Masabih, A. K. Rishinaramangalam, and D. Feezell, “Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes,” J. Appl. Phys. 122(3), 035706 (2017).
[Crossref]

Brener, I.

Cantore, M.

S. H. Oh, B. P. Yonkee, M. Cantore, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to ∼1 W,” Appl. Phys. Express 9(10), 102102 (2016).
[Crossref]

Chai, B.

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, G. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of c- and m-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130–4132 (2002).
[Crossref]

Chen, C. Q.

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, G. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of c- and m-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130–4132 (2002).
[Crossref]

Chou, M. C.

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, G. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of c- and m-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130–4132 (2002).
[Crossref]

Chun, H.

S. Rajbhandari, J. J. D. McKendry, J. Herrnsdorf, H. Chun, G. Faulkner, H. Haas, I. M. Watson, D. O’Brien, and M. D. Dawson, “A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications,” Semicond. Sci. Technol. 32(2), 023001 (2017).
[Crossref]

R. X. G. Ferreira, E. Xie, J. J. D. McKendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications,” IEEE Photonics Technol. Lett. 28(19), 2023–2026 (2016).
[Crossref]

Chung, R. B.

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) bluegreen InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Chyi, J.-I.

D. Huang, J.-I. Chyi, and H. Morkoç, “Carrier effects on the excitonic absorption in GaAs quantum-well structures: Phase-space filling,” Phys. Rev. B Condens. Matter 42(8), 5147–5153 (1990).
[Crossref] [PubMed]

Craven, M. D.

A. David, C. A. Hurni, N. G. Young, and M. D. Craven, “Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures,” Appl. Phys. Lett. 109(3), 033504 (2016).
[Crossref]

Cuevas, A.

A. Cuevas and D. Macdonald, “Measuring and interpreting the lifetime of silicon wafers,” Sol. Energy 76(1-3), 255–262 (2004).
[Crossref]

Dang, P.-Y.

I. L. Koslow, M. T. Hardy, P. Shan Hsu, P.-Y. Dang, F. Wu, A. Romanov, Y.-R. Wu, E. C. Young, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers,” Appl. Phys. Lett. 101(12), 121106 (2012).
[Crossref]

DaVico, K.

A. Rashidi, M. Nami, M. Monavarian, A. Aragon, K. DaVico, F. Ayoub, S. Mishkat-Ul-Masabih, A. K. Rishinaramangalam, and D. Feezell, “Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes,” J. Appl. Phys. 122(3), 035706 (2017).
[Crossref]

David, A.

A. David, C. A. Hurni, N. G. Young, and M. D. Craven, “Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures,” Appl. Phys. Lett. 109(3), 033504 (2016).
[Crossref]

T. Melo, Y.-L. Hu, C. Weisbuch, M. C. Schmidt, A. David, B. Ellis, C. Poblenz, Y.-D. Lin, M. R. Krames, and J. W. Raring, “Gain comparison in polar and nonpolar/semipolar gallium-nitride-based laser diodes,” Semicond. Sci. Technol. 27(2), 024015 (2012).
[Crossref]

A. David and M. J. Grundmann, “Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes,” Appl. Phys. Lett. 97(3), 033501 (2010).
[Crossref]

A. David and M. J. Grundmann, “Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis,” Appl. Phys. Lett. 96(10), 103504 (2010).
[Crossref]

Dawson, M. D.

S. Rajbhandari, J. J. D. McKendry, J. Herrnsdorf, H. Chun, G. Faulkner, H. Haas, I. M. Watson, D. O’Brien, and M. D. Dawson, “A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications,” Semicond. Sci. Technol. 32(2), 023001 (2017).
[Crossref]

R. X. G. Ferreira, E. Xie, J. J. D. McKendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications,” IEEE Photonics Technol. Lett. 28(19), 2023–2026 (2016).
[Crossref]

de Walle, C. G. V.

E. Kioupakis, Q. Yan, D. Steiauf, and C. G. V. de Walle, “Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices,” New J. Phys. 15(12), 125006 (2013).
[Crossref]

E. Kioupakis, Q. Yan, and C. G. V. de Walle, “Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes,” Appl. Phys. Lett. 101(23), 231107 (2012).
[Crossref]

Y. Kawaguchi, C.-Y. Huang, Y.-R. Wu, Q. Yan, C.-C. Pan, Y. Zhao, S. Tanaka, K. Fujito, D. Feezell, C. G. V. de Walle, S. P. DenBaars, and S. Nakamaura, “Influence of polarity on carrier transport in semipolar(202¯1¯) and(202¯1¯) multiple-quantum-well light-emitting diodes, ” Appl. Phys. Lett. 100(23), 231110 (2012).
[Crossref]

Delaney, K. T.

E. Kioupakis, D. Steiauf, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “First-principles calculations of indirect Auger recombination in nitride semiconductors,” Phys. Rev. B 92(3), 035207 (2015).
[Crossref]

E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes,” Appl. Phys. Lett. 98(16), 161107 (2011).
[Crossref]

DenBaars, S. P.

S. Okur, M. Nami, A. K. Rishinaramangalam, S. H. Oh, S. P. DenBaars, S. Liu, I. Brener, and D. F. Feezell, “Internal quantum efficiency and carrier dynamics in semipolar(202¯1¯) InGaN/GaN light-emitting diodes, ” Opt. Express 25(3), 2178–2186 (2017).
[Crossref]

S. H. Oh, B. P. Yonkee, M. Cantore, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to ∼1 W,” Appl. Phys. Express 9(10), 102102 (2016).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, and S. P. DenBaars, “Highly polarized photoluminescence and its dynamics in semipolar(202¯1¯) InGaN/GaN quantum well, ” Appl. Phys. Lett. 104, 111113 (2014).
[Crossref]

F. Wu, Y. Zhao, A. E. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking faults and interface roughening in semipolar(202¯1¯) single InGaN quantum wells for long wavelength emission, ” Appl. Phys. Lett. 104(15), 151901 (2014).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamaura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in semipolar(202¯1¯) InGaN/GaN quantum well, ” Appl. Phys. Lett. 104(11), 111113 (2014).
[Crossref]

S. Marcinkevičius, Y. Zhao, K. M. Kelchner, S. Nakamaura, S. P. DenBaars, and J. S. Speck, “Near-field investigation of spatial variations of(202¯1¯) InGaN quantum well emission spectra, ” Appl. Phys. Lett. 103(13), 131116 (2013).
[Crossref]

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting,” J. Disp. Technol. 9, 190–198 (2013).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green Semipolar(202¯1¯) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth, ” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

R. Shivaraman, Y. Kawaguchi, S. Tanaka, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Comparative analysis of(202¯1¯)and(202¯1¯) semipolar GaN light emitting diodes using atom probe tomography, ” Appl. Phys. Lett. 102(25), 251104 (2013).
[Crossref]

I. L. Koslow, M. T. Hardy, P. Shan Hsu, P.-Y. Dang, F. Wu, A. Romanov, Y.-R. Wu, E. C. Young, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers,” Appl. Phys. Lett. 101(12), 121106 (2012).
[Crossref]

C.-C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar(202¯1¯) Blue Light- Emitting Diodes, ” Appl. Phys. Express 5(10), 102103 (2012).
[Crossref]

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamaura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Y. Kawaguchi, C.-Y. Huang, Y.-R. Wu, Q. Yan, C.-C. Pan, Y. Zhao, S. Tanaka, K. Fujito, D. Feezell, C. G. V. de Walle, S. P. DenBaars, and S. Nakamaura, “Influence of polarity on carrier transport in semipolar(202¯1¯) and(202¯1¯) multiple-quantum-well light-emitting diodes, ” Appl. Phys. Lett. 100(23), 231110 (2012).
[Crossref]

C.-C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-Power, Low-Efficiency-Droop Semipolar(202¯1¯), ” Appl. Phys. Express 5(6), 062103 (2012).
[Crossref]

Y. Zhao, S. Tanaka, C.-C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Power Blue-Violet Semipolar(202¯1¯), ” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) bluegreen InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

C.-Y. Huang, M. T. Hardy, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamaura, “Demonstration of 505 nm laser diodes using wavelength-stable semipolar(202¯1¯) InGaN/GaN quantum wells, ” Appl. Phys. Lett. 99(24), 241115 (2011).
[Crossref]

Eliseev, P. G.

P. G. Eliseev, M. Osinski, H. Li, and I. V. Akimova, “Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells,” Appl. Phys. Lett. 75(24), 3838–3840 (1999).
[Crossref]

Ellis, B.

T. Melo, Y.-L. Hu, C. Weisbuch, M. C. Schmidt, A. David, B. Ellis, C. Poblenz, Y.-D. Lin, M. R. Krames, and J. W. Raring, “Gain comparison in polar and nonpolar/semipolar gallium-nitride-based laser diodes,” Semicond. Sci. Technol. 27(2), 024015 (2012).
[Crossref]

Farrell, R. M.

S. H. Oh, B. P. Yonkee, M. Cantore, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to ∼1 W,” Appl. Phys. Express 9(10), 102102 (2016).
[Crossref]

Faulkner, G.

S. Rajbhandari, J. J. D. McKendry, J. Herrnsdorf, H. Chun, G. Faulkner, H. Haas, I. M. Watson, D. O’Brien, and M. D. Dawson, “A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications,” Semicond. Sci. Technol. 32(2), 023001 (2017).
[Crossref]

R. X. G. Ferreira, E. Xie, J. J. D. McKendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications,” IEEE Photonics Technol. Lett. 28(19), 2023–2026 (2016).
[Crossref]

Feezell, D.

A. Rashidi, M. Monavarian, A. Aragon, S. Okur, M. Nami, A. Rishinaramangalam, S. Mishkat-Ul-Masabih, and D. Feezell, “High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication,” IEEE Photonics Technol. Lett. 29(4), 381–384 (2017).
[Crossref]

A. Rashidi, M. Nami, M. Monavarian, A. Aragon, K. DaVico, F. Ayoub, S. Mishkat-Ul-Masabih, A. K. Rishinaramangalam, and D. Feezell, “Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes,” J. Appl. Phys. 122(3), 035706 (2017).
[Crossref]

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamaura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

C.-C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar(202¯1¯) Blue Light- Emitting Diodes, ” Appl. Phys. Express 5(10), 102103 (2012).
[Crossref]

C.-C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-Power, Low-Efficiency-Droop Semipolar(202¯1¯), ” Appl. Phys. Express 5(6), 062103 (2012).
[Crossref]

Y. Kawaguchi, C.-Y. Huang, Y.-R. Wu, Q. Yan, C.-C. Pan, Y. Zhao, S. Tanaka, K. Fujito, D. Feezell, C. G. V. de Walle, S. P. DenBaars, and S. Nakamaura, “Influence of polarity on carrier transport in semipolar(202¯1¯) and(202¯1¯) multiple-quantum-well light-emitting diodes, ” Appl. Phys. Lett. 100(23), 231110 (2012).
[Crossref]

Y. Zhao, S. Tanaka, C.-C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Power Blue-Violet Semipolar(202¯1¯), ” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

C.-Y. Huang, M. T. Hardy, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamaura, “Demonstration of 505 nm laser diodes using wavelength-stable semipolar(202¯1¯) InGaN/GaN quantum wells, ” Appl. Phys. Lett. 99(24), 241115 (2011).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) bluegreen InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Feezell, D. F.

S. Okur, M. Nami, A. K. Rishinaramangalam, S. H. Oh, S. P. DenBaars, S. Liu, I. Brener, and D. F. Feezell, “Internal quantum efficiency and carrier dynamics in semipolar(202¯1¯) InGaN/GaN light-emitting diodes, ” Opt. Express 25(3), 2178–2186 (2017).
[Crossref]

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting,” J. Disp. Technol. 9, 190–198 (2013).
[Crossref]

Ferreira, R. X. G.

R. X. G. Ferreira, E. Xie, J. J. D. McKendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications,” IEEE Photonics Technol. Lett. 28(19), 2023–2026 (2016).
[Crossref]

Fujito, K.

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green Semipolar(202¯1¯) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth, ” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamaura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Y. Kawaguchi, C.-Y. Huang, Y.-R. Wu, Q. Yan, C.-C. Pan, Y. Zhao, S. Tanaka, K. Fujito, D. Feezell, C. G. V. de Walle, S. P. DenBaars, and S. Nakamaura, “Influence of polarity on carrier transport in semipolar(202¯1¯) and(202¯1¯) multiple-quantum-well light-emitting diodes, ” Appl. Phys. Lett. 100(23), 231110 (2012).
[Crossref]

Y. Zhao, S. Tanaka, C.-C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Power Blue-Violet Semipolar(202¯1¯), ” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) bluegreen InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

C.-Y. Huang, M. T. Hardy, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamaura, “Demonstration of 505 nm laser diodes using wavelength-stable semipolar(202¯1¯) InGaN/GaN quantum wells, ” Appl. Phys. Lett. 99(24), 241115 (2011).
[Crossref]

Gaevski, M. E.

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, G. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of c- and m-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130–4132 (2002).
[Crossref]

Gallagher, J. J.

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, G. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of c- and m-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130–4132 (2002).
[Crossref]

Gilbert, T.

C.-C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar(202¯1¯) Blue Light- Emitting Diodes, ” Appl. Phys. Express 5(10), 102103 (2012).
[Crossref]

Grundmann, M. J.

A. David and M. J. Grundmann, “Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes,” Appl. Phys. Lett. 97(3), 033501 (2010).
[Crossref]

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C.-Y. Huang, M. T. Hardy, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamaura, “Demonstration of 505 nm laser diodes using wavelength-stable semipolar(202¯1¯) InGaN/GaN quantum wells, ” Appl. Phys. Lett. 99(24), 241115 (2011).
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Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) bluegreen InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
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D. Huang, J.-I. Chyi, and H. Morkoç, “Carrier effects on the excitonic absorption in GaAs quantum-well structures: Phase-space filling,” Phys. Rev. B Condens. Matter 42(8), 5147–5153 (1990).
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S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, and S. P. DenBaars, “Highly polarized photoluminescence and its dynamics in semipolar(202¯1¯) InGaN/GaN quantum well, ” Appl. Phys. Lett. 104, 111113 (2014).
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Kawaguchi, Y.

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green Semipolar(202¯1¯) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth, ” Appl. Phys. Express 6(6), 062102 (2013).
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R. Shivaraman, Y. Kawaguchi, S. Tanaka, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Comparative analysis of(202¯1¯)and(202¯1¯) semipolar GaN light emitting diodes using atom probe tomography, ” Appl. Phys. Lett. 102(25), 251104 (2013).
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Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamaura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
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Y. Kawaguchi, C.-Y. Huang, Y.-R. Wu, Q. Yan, C.-C. Pan, Y. Zhao, S. Tanaka, K. Fujito, D. Feezell, C. G. V. de Walle, S. P. DenBaars, and S. Nakamaura, “Influence of polarity on carrier transport in semipolar(202¯1¯) and(202¯1¯) multiple-quantum-well light-emitting diodes, ” Appl. Phys. Lett. 100(23), 231110 (2012).
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Kelchner, K. M.

S. Marcinkevičius, Y. Zhao, K. M. Kelchner, S. Nakamaura, S. P. DenBaars, and J. S. Speck, “Near-field investigation of spatial variations of(202¯1¯) InGaN quantum well emission spectra, ” Appl. Phys. Lett. 103(13), 131116 (2013).
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R. X. G. Ferreira, E. Xie, J. J. D. McKendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications,” IEEE Photonics Technol. Lett. 28(19), 2023–2026 (2016).
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I. L. Koslow, M. T. Hardy, P. Shan Hsu, P.-Y. Dang, F. Wu, A. Romanov, Y.-R. Wu, E. C. Young, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers,” Appl. Phys. Lett. 101(12), 121106 (2012).
[Crossref]

Krames, M. R.

T. Melo, Y.-L. Hu, C. Weisbuch, M. C. Schmidt, A. David, B. Ellis, C. Poblenz, Y.-D. Lin, M. R. Krames, and J. W. Raring, “Gain comparison in polar and nonpolar/semipolar gallium-nitride-based laser diodes,” Semicond. Sci. Technol. 27(2), 024015 (2012).
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Kuokstis, E.

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, G. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of c- and m-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130–4132 (2002).
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Li, H.

P. G. Eliseev, M. Osinski, H. Li, and I. V. Akimova, “Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells,” Appl. Phys. Lett. 75(24), 3838–3840 (1999).
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T. Melo, Y.-L. Hu, C. Weisbuch, M. C. Schmidt, A. David, B. Ellis, C. Poblenz, Y.-D. Lin, M. R. Krames, and J. W. Raring, “Gain comparison in polar and nonpolar/semipolar gallium-nitride-based laser diodes,” Semicond. Sci. Technol. 27(2), 024015 (2012).
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S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, and S. P. DenBaars, “Highly polarized photoluminescence and its dynamics in semipolar(202¯1¯) InGaN/GaN quantum well, ” Appl. Phys. Lett. 104, 111113 (2014).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamaura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in semipolar(202¯1¯) InGaN/GaN quantum well, ” Appl. Phys. Lett. 104(11), 111113 (2014).
[Crossref]

S. Marcinkevičius, Y. Zhao, K. M. Kelchner, S. Nakamaura, S. P. DenBaars, and J. S. Speck, “Near-field investigation of spatial variations of(202¯1¯) InGaN quantum well emission spectra, ” Appl. Phys. Lett. 103(13), 131116 (2013).
[Crossref]

Maruska, H. P.

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, G. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of c- and m-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130–4132 (2002).
[Crossref]

McKendry, J. J. D.

S. Rajbhandari, J. J. D. McKendry, J. Herrnsdorf, H. Chun, G. Faulkner, H. Haas, I. M. Watson, D. O’Brien, and M. D. Dawson, “A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications,” Semicond. Sci. Technol. 32(2), 023001 (2017).
[Crossref]

R. X. G. Ferreira, E. Xie, J. J. D. McKendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications,” IEEE Photonics Technol. Lett. 28(19), 2023–2026 (2016).
[Crossref]

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T. Melo, Y.-L. Hu, C. Weisbuch, M. C. Schmidt, A. David, B. Ellis, C. Poblenz, Y.-D. Lin, M. R. Krames, and J. W. Raring, “Gain comparison in polar and nonpolar/semipolar gallium-nitride-based laser diodes,” Semicond. Sci. Technol. 27(2), 024015 (2012).
[Crossref]

Mishkat-Ul-Masabih, S.

A. Rashidi, M. Monavarian, A. Aragon, S. Okur, M. Nami, A. Rishinaramangalam, S. Mishkat-Ul-Masabih, and D. Feezell, “High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication,” IEEE Photonics Technol. Lett. 29(4), 381–384 (2017).
[Crossref]

A. Rashidi, M. Nami, M. Monavarian, A. Aragon, K. DaVico, F. Ayoub, S. Mishkat-Ul-Masabih, A. K. Rishinaramangalam, and D. Feezell, “Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes,” J. Appl. Phys. 122(3), 035706 (2017).
[Crossref]

Monavarian, M.

A. Rashidi, M. Monavarian, A. Aragon, S. Okur, M. Nami, A. Rishinaramangalam, S. Mishkat-Ul-Masabih, and D. Feezell, “High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication,” IEEE Photonics Technol. Lett. 29(4), 381–384 (2017).
[Crossref]

A. Rashidi, M. Nami, M. Monavarian, A. Aragon, K. DaVico, F. Ayoub, S. Mishkat-Ul-Masabih, A. K. Rishinaramangalam, and D. Feezell, “Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes,” J. Appl. Phys. 122(3), 035706 (2017).
[Crossref]

Morkoç, H.

D. Huang, J.-I. Chyi, and H. Morkoç, “Carrier effects on the excitonic absorption in GaAs quantum-well structures: Phase-space filling,” Phys. Rev. B Condens. Matter 42(8), 5147–5153 (1990).
[Crossref] [PubMed]

Nakamaura, S.

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamaura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in semipolar(202¯1¯) InGaN/GaN quantum well, ” Appl. Phys. Lett. 104(11), 111113 (2014).
[Crossref]

S. Marcinkevičius, Y. Zhao, K. M. Kelchner, S. Nakamaura, S. P. DenBaars, and J. S. Speck, “Near-field investigation of spatial variations of(202¯1¯) InGaN quantum well emission spectra, ” Appl. Phys. Lett. 103(13), 131116 (2013).
[Crossref]

Y. Kawaguchi, C.-Y. Huang, Y.-R. Wu, Q. Yan, C.-C. Pan, Y. Zhao, S. Tanaka, K. Fujito, D. Feezell, C. G. V. de Walle, S. P. DenBaars, and S. Nakamaura, “Influence of polarity on carrier transport in semipolar(202¯1¯) and(202¯1¯) multiple-quantum-well light-emitting diodes, ” Appl. Phys. Lett. 100(23), 231110 (2012).
[Crossref]

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamaura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

C.-Y. Huang, M. T. Hardy, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamaura, “Demonstration of 505 nm laser diodes using wavelength-stable semipolar(202¯1¯) InGaN/GaN quantum wells, ” Appl. Phys. Lett. 99(24), 241115 (2011).
[Crossref]

Nakamura, S.

S. H. Oh, B. P. Yonkee, M. Cantore, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to ∼1 W,” Appl. Phys. Express 9(10), 102102 (2016).
[Crossref]

F. Wu, Y. Zhao, A. E. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking faults and interface roughening in semipolar(202¯1¯) single InGaN quantum wells for long wavelength emission, ” Appl. Phys. Lett. 104(15), 151901 (2014).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, and S. P. DenBaars, “Highly polarized photoluminescence and its dynamics in semipolar(202¯1¯) InGaN/GaN quantum well, ” Appl. Phys. Lett. 104, 111113 (2014).
[Crossref]

Y. Zhao, F. Wu, T.-J. Yang, Y.-R. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells,” Appl. Phys. Express 7, 025503 (2014).
[Crossref]

R. Shivaraman, Y. Kawaguchi, S. Tanaka, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Comparative analysis of(202¯1¯)and(202¯1¯) semipolar GaN light emitting diodes using atom probe tomography, ” Appl. Phys. Lett. 102(25), 251104 (2013).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green Semipolar(202¯1¯) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth, ” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting,” J. Disp. Technol. 9, 190–198 (2013).
[Crossref]

C.-C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-Power, Low-Efficiency-Droop Semipolar(202¯1¯), ” Appl. Phys. Express 5(6), 062103 (2012).
[Crossref]

C.-C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar(202¯1¯) Blue Light- Emitting Diodes, ” Appl. Phys. Express 5(10), 102103 (2012).
[Crossref]

I. L. Koslow, M. T. Hardy, P. Shan Hsu, P.-Y. Dang, F. Wu, A. Romanov, Y.-R. Wu, E. C. Young, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers,” Appl. Phys. Lett. 101(12), 121106 (2012).
[Crossref]

Y. Zhao, S. Tanaka, C.-C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Power Blue-Violet Semipolar(202¯1¯), ” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) bluegreen InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Nami, M.

S. Okur, M. Nami, A. K. Rishinaramangalam, S. H. Oh, S. P. DenBaars, S. Liu, I. Brener, and D. F. Feezell, “Internal quantum efficiency and carrier dynamics in semipolar(202¯1¯) InGaN/GaN light-emitting diodes, ” Opt. Express 25(3), 2178–2186 (2017).
[Crossref]

A. Rashidi, M. Monavarian, A. Aragon, S. Okur, M. Nami, A. Rishinaramangalam, S. Mishkat-Ul-Masabih, and D. Feezell, “High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication,” IEEE Photonics Technol. Lett. 29(4), 381–384 (2017).
[Crossref]

A. Rashidi, M. Nami, M. Monavarian, A. Aragon, K. DaVico, F. Ayoub, S. Mishkat-Ul-Masabih, A. K. Rishinaramangalam, and D. Feezell, “Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes,” J. Appl. Phys. 122(3), 035706 (2017).
[Crossref]

O’Brien, D.

S. Rajbhandari, J. J. D. McKendry, J. Herrnsdorf, H. Chun, G. Faulkner, H. Haas, I. M. Watson, D. O’Brien, and M. D. Dawson, “A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications,” Semicond. Sci. Technol. 32(2), 023001 (2017).
[Crossref]

O’Brien, D. C.

R. X. G. Ferreira, E. Xie, J. J. D. McKendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications,” IEEE Photonics Technol. Lett. 28(19), 2023–2026 (2016).
[Crossref]

Oh, S. H.

S. Okur, M. Nami, A. K. Rishinaramangalam, S. H. Oh, S. P. DenBaars, S. Liu, I. Brener, and D. F. Feezell, “Internal quantum efficiency and carrier dynamics in semipolar(202¯1¯) InGaN/GaN light-emitting diodes, ” Opt. Express 25(3), 2178–2186 (2017).
[Crossref]

S. H. Oh, B. P. Yonkee, M. Cantore, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to ∼1 W,” Appl. Phys. Express 9(10), 102102 (2016).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green Semipolar(202¯1¯) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth, ” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

Okur, S.

S. Okur, M. Nami, A. K. Rishinaramangalam, S. H. Oh, S. P. DenBaars, S. Liu, I. Brener, and D. F. Feezell, “Internal quantum efficiency and carrier dynamics in semipolar(202¯1¯) InGaN/GaN light-emitting diodes, ” Opt. Express 25(3), 2178–2186 (2017).
[Crossref]

A. Rashidi, M. Monavarian, A. Aragon, S. Okur, M. Nami, A. Rishinaramangalam, S. Mishkat-Ul-Masabih, and D. Feezell, “High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication,” IEEE Photonics Technol. Lett. 29(4), 381–384 (2017).
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Osinski, M.

P. G. Eliseev, M. Osinski, H. Li, and I. V. Akimova, “Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells,” Appl. Phys. Lett. 75(24), 3838–3840 (1999).
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Pan, C.-C.

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamaura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

C.-C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar(202¯1¯) Blue Light- Emitting Diodes, ” Appl. Phys. Express 5(10), 102103 (2012).
[Crossref]

C.-C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-Power, Low-Efficiency-Droop Semipolar(202¯1¯), ” Appl. Phys. Express 5(6), 062103 (2012).
[Crossref]

Y. Kawaguchi, C.-Y. Huang, Y.-R. Wu, Q. Yan, C.-C. Pan, Y. Zhao, S. Tanaka, K. Fujito, D. Feezell, C. G. V. de Walle, S. P. DenBaars, and S. Nakamaura, “Influence of polarity on carrier transport in semipolar(202¯1¯) and(202¯1¯) multiple-quantum-well light-emitting diodes, ” Appl. Phys. Lett. 100(23), 231110 (2012).
[Crossref]

Y. Zhao, S. Tanaka, C.-C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Power Blue-Violet Semipolar(202¯1¯), ” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) bluegreen InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
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Park, S.-H.

S.-H. Park and D. Ahn, “High optical polarization ratio of semipolar(202¯1¯) -oriented InGaN/GaN quantum wells and comparison with experiment, ” J. Appl. Phys. 112(9), 093106 (2012).
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R. X. G. Ferreira, E. Xie, J. J. D. McKendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications,” IEEE Photonics Technol. Lett. 28(19), 2023–2026 (2016).
[Crossref]

Pfaff, N.

C.-C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar(202¯1¯) Blue Light- Emitting Diodes, ” Appl. Phys. Express 5(10), 102103 (2012).
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Poblenz, C.

T. Melo, Y.-L. Hu, C. Weisbuch, M. C. Schmidt, A. David, B. Ellis, C. Poblenz, Y.-D. Lin, M. R. Krames, and J. W. Raring, “Gain comparison in polar and nonpolar/semipolar gallium-nitride-based laser diodes,” Semicond. Sci. Technol. 27(2), 024015 (2012).
[Crossref]

Rajbhandari, S.

S. Rajbhandari, J. J. D. McKendry, J. Herrnsdorf, H. Chun, G. Faulkner, H. Haas, I. M. Watson, D. O’Brien, and M. D. Dawson, “A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications,” Semicond. Sci. Technol. 32(2), 023001 (2017).
[Crossref]

R. X. G. Ferreira, E. Xie, J. J. D. McKendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications,” IEEE Photonics Technol. Lett. 28(19), 2023–2026 (2016).
[Crossref]

Raring, J. W.

T. Melo, Y.-L. Hu, C. Weisbuch, M. C. Schmidt, A. David, B. Ellis, C. Poblenz, Y.-D. Lin, M. R. Krames, and J. W. Raring, “Gain comparison in polar and nonpolar/semipolar gallium-nitride-based laser diodes,” Semicond. Sci. Technol. 27(2), 024015 (2012).
[Crossref]

Rashidi, A.

A. Rashidi, M. Nami, M. Monavarian, A. Aragon, K. DaVico, F. Ayoub, S. Mishkat-Ul-Masabih, A. K. Rishinaramangalam, and D. Feezell, “Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes,” J. Appl. Phys. 122(3), 035706 (2017).
[Crossref]

A. Rashidi, M. Monavarian, A. Aragon, S. Okur, M. Nami, A. Rishinaramangalam, S. Mishkat-Ul-Masabih, and D. Feezell, “High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication,” IEEE Photonics Technol. Lett. 29(4), 381–384 (2017).
[Crossref]

Read, W. T.

W. Shockley and W. T. Read, “Statistics of the Recombinations of Holes and Electrons,” Phys. Rev. 87(5), 835–842 (1952).
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Rich, D. H.

S. Khatsevich and D. H. Rich, “The effects of crystallographic orientation and strain on the properties of excitonic emission from wurtzite InGaN/GaN quantum wells,” J. Phys. Condens. Matter 20(21), 215223 (2008).
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Rinke, P.

E. Kioupakis, D. Steiauf, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “First-principles calculations of indirect Auger recombination in nitride semiconductors,” Phys. Rev. B 92(3), 035207 (2015).
[Crossref]

E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes,” Appl. Phys. Lett. 98(16), 161107 (2011).
[Crossref]

Rishinaramangalam, A.

A. Rashidi, M. Monavarian, A. Aragon, S. Okur, M. Nami, A. Rishinaramangalam, S. Mishkat-Ul-Masabih, and D. Feezell, “High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication,” IEEE Photonics Technol. Lett. 29(4), 381–384 (2017).
[Crossref]

Rishinaramangalam, A. K.

A. Rashidi, M. Nami, M. Monavarian, A. Aragon, K. DaVico, F. Ayoub, S. Mishkat-Ul-Masabih, A. K. Rishinaramangalam, and D. Feezell, “Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes,” J. Appl. Phys. 122(3), 035706 (2017).
[Crossref]

S. Okur, M. Nami, A. K. Rishinaramangalam, S. H. Oh, S. P. DenBaars, S. Liu, I. Brener, and D. F. Feezell, “Internal quantum efficiency and carrier dynamics in semipolar(202¯1¯) InGaN/GaN light-emitting diodes, ” Opt. Express 25(3), 2178–2186 (2017).
[Crossref]

Romanov, A.

I. L. Koslow, M. T. Hardy, P. Shan Hsu, P.-Y. Dang, F. Wu, A. Romanov, Y.-R. Wu, E. C. Young, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers,” Appl. Phys. Lett. 101(12), 121106 (2012).
[Crossref]

Romanov, A. E.

F. Wu, Y. Zhao, A. E. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking faults and interface roughening in semipolar(202¯1¯) single InGaN quantum wells for long wavelength emission, ” Appl. Phys. Lett. 104(15), 151901 (2014).
[Crossref]

Schmidt, M. C.

T. Melo, Y.-L. Hu, C. Weisbuch, M. C. Schmidt, A. David, B. Ellis, C. Poblenz, Y.-D. Lin, M. R. Krames, and J. W. Raring, “Gain comparison in polar and nonpolar/semipolar gallium-nitride-based laser diodes,” Semicond. Sci. Technol. 27(2), 024015 (2012).
[Crossref]

Shan Hsu, P.

I. L. Koslow, M. T. Hardy, P. Shan Hsu, P.-Y. Dang, F. Wu, A. Romanov, Y.-R. Wu, E. C. Young, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers,” Appl. Phys. Lett. 101(12), 121106 (2012).
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Shim, J.-I.

D.-P. Han, J.-I. Shim, and D.-S. Shin, “Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurement,” Appl. Phys. Express 10(5), 052101 (2017).
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Shin, D.-S.

D.-P. Han, J.-I. Shim, and D.-S. Shin, “Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurement,” Appl. Phys. Express 10(5), 052101 (2017).
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Shivaraman, R.

T.-J. Yang, R. Shivaraman, J. S. Speck, and Y.-R. Wu, “The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior,” J. Appl. Phys. 116(11), 113104 (2014).
[Crossref]

R. Shivaraman, Y. Kawaguchi, S. Tanaka, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Comparative analysis of(202¯1¯)and(202¯1¯) semipolar GaN light emitting diodes using atom probe tomography, ” Appl. Phys. Lett. 102(25), 251104 (2013).
[Crossref]

Shockley, W.

W. Shockley and W. T. Read, “Statistics of the Recombinations of Holes and Electrons,” Phys. Rev. 87(5), 835–842 (1952).
[Crossref]

Simin, G.

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, G. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of c- and m-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130–4132 (2002).
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Speck, J. S.

S. H. Oh, B. P. Yonkee, M. Cantore, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to ∼1 W,” Appl. Phys. Express 9(10), 102102 (2016).
[Crossref]

F. Wu, Y. Zhao, A. E. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking faults and interface roughening in semipolar(202¯1¯) single InGaN quantum wells for long wavelength emission, ” Appl. Phys. Lett. 104(15), 151901 (2014).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamaura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in semipolar(202¯1¯) InGaN/GaN quantum well, ” Appl. Phys. Lett. 104(11), 111113 (2014).
[Crossref]

T.-J. Yang, R. Shivaraman, J. S. Speck, and Y.-R. Wu, “The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior,” J. Appl. Phys. 116(11), 113104 (2014).
[Crossref]

Y. Zhao, F. Wu, T.-J. Yang, Y.-R. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells,” Appl. Phys. Express 7, 025503 (2014).
[Crossref]

R. Shivaraman, Y. Kawaguchi, S. Tanaka, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Comparative analysis of(202¯1¯)and(202¯1¯) semipolar GaN light emitting diodes using atom probe tomography, ” Appl. Phys. Lett. 102(25), 251104 (2013).
[Crossref]

S. Marcinkevičius, Y. Zhao, K. M. Kelchner, S. Nakamaura, S. P. DenBaars, and J. S. Speck, “Near-field investigation of spatial variations of(202¯1¯) InGaN quantum well emission spectra, ” Appl. Phys. Lett. 103(13), 131116 (2013).
[Crossref]

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting,” J. Disp. Technol. 9, 190–198 (2013).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green Semipolar(202¯1¯) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth, ” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamaura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

C.-C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar(202¯1¯) Blue Light- Emitting Diodes, ” Appl. Phys. Express 5(10), 102103 (2012).
[Crossref]

C.-C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-Power, Low-Efficiency-Droop Semipolar(202¯1¯), ” Appl. Phys. Express 5(6), 062103 (2012).
[Crossref]

I. L. Koslow, M. T. Hardy, P. Shan Hsu, P.-Y. Dang, F. Wu, A. Romanov, Y.-R. Wu, E. C. Young, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers,” Appl. Phys. Lett. 101(12), 121106 (2012).
[Crossref]

Y. Zhao, S. Tanaka, C.-C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Power Blue-Violet Semipolar(202¯1¯), ” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) bluegreen InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

C.-Y. Huang, M. T. Hardy, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamaura, “Demonstration of 505 nm laser diodes using wavelength-stable semipolar(202¯1¯) InGaN/GaN quantum wells, ” Appl. Phys. Lett. 99(24), 241115 (2011).
[Crossref]

Steiauf, D.

E. Kioupakis, D. Steiauf, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “First-principles calculations of indirect Auger recombination in nitride semiconductors,” Phys. Rev. B 92(3), 035207 (2015).
[Crossref]

E. Kioupakis, Q. Yan, D. Steiauf, and C. G. V. de Walle, “Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices,” New J. Phys. 15(12), 125006 (2013).
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D. Yevick and W. Streifer, “Radiative and nonradiative recombination law in lightly doped InGaAsP lasers,” Electron. Lett. 19(24), 1012–1014 (1983).
[Crossref]

Sun, W. H.

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, G. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of c- and m-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130–4132 (2002).
[Crossref]

Tanaka, S.

R. Shivaraman, Y. Kawaguchi, S. Tanaka, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Comparative analysis of(202¯1¯)and(202¯1¯) semipolar GaN light emitting diodes using atom probe tomography, ” Appl. Phys. Lett. 102(25), 251104 (2013).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green Semipolar(202¯1¯) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth, ” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

C.-C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar(202¯1¯) Blue Light- Emitting Diodes, ” Appl. Phys. Express 5(10), 102103 (2012).
[Crossref]

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamaura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

C.-C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-Power, Low-Efficiency-Droop Semipolar(202¯1¯), ” Appl. Phys. Express 5(6), 062103 (2012).
[Crossref]

Y. Kawaguchi, C.-Y. Huang, Y.-R. Wu, Q. Yan, C.-C. Pan, Y. Zhao, S. Tanaka, K. Fujito, D. Feezell, C. G. V. de Walle, S. P. DenBaars, and S. Nakamaura, “Influence of polarity on carrier transport in semipolar(202¯1¯) and(202¯1¯) multiple-quantum-well light-emitting diodes, ” Appl. Phys. Lett. 100(23), 231110 (2012).
[Crossref]

Y. Zhao, S. Tanaka, C.-C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Power Blue-Violet Semipolar(202¯1¯), ” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) bluegreen InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Van de Walle, C. G.

E. Kioupakis, D. Steiauf, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “First-principles calculations of indirect Auger recombination in nitride semiconductors,” Phys. Rev. B 92(3), 035207 (2015).
[Crossref]

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamaura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) bluegreen InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes,” Appl. Phys. Lett. 98(16), 161107 (2011).
[Crossref]

Watson, I. M.

S. Rajbhandari, J. J. D. McKendry, J. Herrnsdorf, H. Chun, G. Faulkner, H. Haas, I. M. Watson, D. O’Brien, and M. D. Dawson, “A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications,” Semicond. Sci. Technol. 32(2), 023001 (2017).
[Crossref]

Watson, S.

R. X. G. Ferreira, E. Xie, J. J. D. McKendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications,” IEEE Photonics Technol. Lett. 28(19), 2023–2026 (2016).
[Crossref]

Weisbuch, C.

T. Melo, Y.-L. Hu, C. Weisbuch, M. C. Schmidt, A. David, B. Ellis, C. Poblenz, Y.-D. Lin, M. R. Krames, and J. W. Raring, “Gain comparison in polar and nonpolar/semipolar gallium-nitride-based laser diodes,” Semicond. Sci. Technol. 27(2), 024015 (2012).
[Crossref]

White, I. H.

R. X. G. Ferreira, E. Xie, J. J. D. McKendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications,” IEEE Photonics Technol. Lett. 28(19), 2023–2026 (2016).
[Crossref]

Wu, F.

Y. Zhao, F. Wu, T.-J. Yang, Y.-R. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells,” Appl. Phys. Express 7, 025503 (2014).
[Crossref]

F. Wu, Y. Zhao, A. E. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking faults and interface roughening in semipolar(202¯1¯) single InGaN quantum wells for long wavelength emission, ” Appl. Phys. Lett. 104(15), 151901 (2014).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green Semipolar(202¯1¯) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth, ” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

C.-C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-Power, Low-Efficiency-Droop Semipolar(202¯1¯), ” Appl. Phys. Express 5(6), 062103 (2012).
[Crossref]

I. L. Koslow, M. T. Hardy, P. Shan Hsu, P.-Y. Dang, F. Wu, A. Romanov, Y.-R. Wu, E. C. Young, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers,” Appl. Phys. Lett. 101(12), 121106 (2012).
[Crossref]

Wu, Y.-R.

T.-J. Yang, R. Shivaraman, J. S. Speck, and Y.-R. Wu, “The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior,” J. Appl. Phys. 116(11), 113104 (2014).
[Crossref]

Y. Zhao, F. Wu, T.-J. Yang, Y.-R. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells,” Appl. Phys. Express 7, 025503 (2014).
[Crossref]

I. L. Koslow, M. T. Hardy, P. Shan Hsu, P.-Y. Dang, F. Wu, A. Romanov, Y.-R. Wu, E. C. Young, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers,” Appl. Phys. Lett. 101(12), 121106 (2012).
[Crossref]

Y. Kawaguchi, C.-Y. Huang, Y.-R. Wu, Q. Yan, C.-C. Pan, Y. Zhao, S. Tanaka, K. Fujito, D. Feezell, C. G. V. de Walle, S. P. DenBaars, and S. Nakamaura, “Influence of polarity on carrier transport in semipolar(202¯1¯) and(202¯1¯) multiple-quantum-well light-emitting diodes, ” Appl. Phys. Lett. 100(23), 231110 (2012).
[Crossref]

H.-H. Huang and Y.-R. Wu, “Light emission polarization properties of semipolar InGaN/GaN quantum well,” J. Appl. Phys. 107(5), 053112 (2010).
[Crossref]

Xie, E.

R. X. G. Ferreira, E. Xie, J. J. D. McKendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications,” IEEE Photonics Technol. Lett. 28(19), 2023–2026 (2016).
[Crossref]

Yan, Q.

E. Kioupakis, Q. Yan, D. Steiauf, and C. G. V. de Walle, “Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices,” New J. Phys. 15(12), 125006 (2013).
[Crossref]

E. Kioupakis, Q. Yan, and C. G. V. de Walle, “Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes,” Appl. Phys. Lett. 101(23), 231107 (2012).
[Crossref]

Y. Kawaguchi, C.-Y. Huang, Y.-R. Wu, Q. Yan, C.-C. Pan, Y. Zhao, S. Tanaka, K. Fujito, D. Feezell, C. G. V. de Walle, S. P. DenBaars, and S. Nakamaura, “Influence of polarity on carrier transport in semipolar(202¯1¯) and(202¯1¯) multiple-quantum-well light-emitting diodes, ” Appl. Phys. Lett. 100(23), 231110 (2012).
[Crossref]

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamaura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) bluegreen InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Yang, J. W.

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, G. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of c- and m-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130–4132 (2002).
[Crossref]

Yang, T.-J.

T.-J. Yang, R. Shivaraman, J. S. Speck, and Y.-R. Wu, “The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior,” J. Appl. Phys. 116(11), 113104 (2014).
[Crossref]

Y. Zhao, F. Wu, T.-J. Yang, Y.-R. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells,” Appl. Phys. Express 7, 025503 (2014).
[Crossref]

Yevick, D.

D. Yevick and W. Streifer, “Radiative and nonradiative recombination law in lightly doped InGaAsP lasers,” Electron. Lett. 19(24), 1012–1014 (1983).
[Crossref]

Yonkee, B. P.

S. H. Oh, B. P. Yonkee, M. Cantore, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to ∼1 W,” Appl. Phys. Express 9(10), 102102 (2016).
[Crossref]

Young, E. C.

I. L. Koslow, M. T. Hardy, P. Shan Hsu, P.-Y. Dang, F. Wu, A. Romanov, Y.-R. Wu, E. C. Young, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers,” Appl. Phys. Lett. 101(12), 121106 (2012).
[Crossref]

Young, N. G.

A. David, C. A. Hurni, N. G. Young, and M. D. Craven, “Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures,” Appl. Phys. Lett. 109(3), 033504 (2016).
[Crossref]

Zhao, Y.

Y. Zhao, F. Wu, T.-J. Yang, Y.-R. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells,” Appl. Phys. Express 7, 025503 (2014).
[Crossref]

F. Wu, Y. Zhao, A. E. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking faults and interface roughening in semipolar(202¯1¯) single InGaN quantum wells for long wavelength emission, ” Appl. Phys. Lett. 104(15), 151901 (2014).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, and S. P. DenBaars, “Highly polarized photoluminescence and its dynamics in semipolar(202¯1¯) InGaN/GaN quantum well, ” Appl. Phys. Lett. 104, 111113 (2014).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamaura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in semipolar(202¯1¯) InGaN/GaN quantum well, ” Appl. Phys. Lett. 104(11), 111113 (2014).
[Crossref]

S. Marcinkevičius, Y. Zhao, K. M. Kelchner, S. Nakamaura, S. P. DenBaars, and J. S. Speck, “Near-field investigation of spatial variations of(202¯1¯) InGaN quantum well emission spectra, ” Appl. Phys. Lett. 103(13), 131116 (2013).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green Semipolar(202¯1¯) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth, ” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

C.-C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar(202¯1¯) Blue Light- Emitting Diodes, ” Appl. Phys. Express 5(10), 102103 (2012).
[Crossref]

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamaura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Y. Kawaguchi, C.-Y. Huang, Y.-R. Wu, Q. Yan, C.-C. Pan, Y. Zhao, S. Tanaka, K. Fujito, D. Feezell, C. G. V. de Walle, S. P. DenBaars, and S. Nakamaura, “Influence of polarity on carrier transport in semipolar(202¯1¯) and(202¯1¯) multiple-quantum-well light-emitting diodes, ” Appl. Phys. Lett. 100(23), 231110 (2012).
[Crossref]

C.-C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-Power, Low-Efficiency-Droop Semipolar(202¯1¯), ” Appl. Phys. Express 5(6), 062103 (2012).
[Crossref]

Y. Zhao, S. Tanaka, C.-C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Power Blue-Violet Semipolar(202¯1¯), ” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) bluegreen InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Appl. Phys. Express (7)

Y. Zhao, S. Tanaka, C.-C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Power Blue-Violet Semipolar(202¯1¯), ” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

C.-C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-Power, Low-Efficiency-Droop Semipolar(202¯1¯), ” Appl. Phys. Express 5(6), 062103 (2012).
[Crossref]

C.-C. Pan, T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar(202¯1¯) Blue Light- Emitting Diodes, ” Appl. Phys. Express 5(10), 102103 (2012).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green Semipolar(202¯1¯) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth, ” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

S. H. Oh, B. P. Yonkee, M. Cantore, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to ∼1 W,” Appl. Phys. Express 9(10), 102102 (2016).
[Crossref]

D.-P. Han, J.-I. Shim, and D.-S. Shin, “Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurement,” Appl. Phys. Express 10(5), 052101 (2017).
[Crossref]

Y. Zhao, F. Wu, T.-J. Yang, Y.-R. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells,” Appl. Phys. Express 7, 025503 (2014).
[Crossref]

Appl. Phys. Lett. (17)

R. Shivaraman, Y. Kawaguchi, S. Tanaka, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Comparative analysis of(202¯1¯)and(202¯1¯) semipolar GaN light emitting diodes using atom probe tomography, ” Appl. Phys. Lett. 102(25), 251104 (2013).
[Crossref]

I. L. Koslow, M. T. Hardy, P. Shan Hsu, P.-Y. Dang, F. Wu, A. Romanov, Y.-R. Wu, E. C. Young, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers,” Appl. Phys. Lett. 101(12), 121106 (2012).
[Crossref]

E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes,” Appl. Phys. Lett. 98(16), 161107 (2011).
[Crossref]

P. G. Eliseev, M. Osinski, H. Li, and I. V. Akimova, “Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells,” Appl. Phys. Lett. 75(24), 3838–3840 (1999).
[Crossref]

A. David and M. J. Grundmann, “Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis,” Appl. Phys. Lett. 96(10), 103504 (2010).
[Crossref]

A. David, C. A. Hurni, N. G. Young, and M. D. Craven, “Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures,” Appl. Phys. Lett. 109(3), 033504 (2016).
[Crossref]

A. David and M. J. Grundmann, “Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes,” Appl. Phys. Lett. 97(3), 033501 (2010).
[Crossref]

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, G. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of c- and m-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130–4132 (2002).
[Crossref]

E. Kioupakis, Q. Yan, and C. G. V. de Walle, “Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes,” Appl. Phys. Lett. 101(23), 231107 (2012).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, and S. P. DenBaars, “Highly polarized photoluminescence and its dynamics in semipolar(202¯1¯) InGaN/GaN quantum well, ” Appl. Phys. Lett. 104, 111113 (2014).
[Crossref]

F. Wu, Y. Zhao, A. E. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Stacking faults and interface roughening in semipolar(202¯1¯) single InGaN quantum wells for long wavelength emission, ” Appl. Phys. Lett. 104(15), 151901 (2014).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C.-Y. Huang, R. B. Chung, C.-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) bluegreen InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

C.-Y. Huang, M. T. Hardy, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamaura, “Demonstration of 505 nm laser diodes using wavelength-stable semipolar(202¯1¯) InGaN/GaN quantum wells, ” Appl. Phys. Lett. 99(24), 241115 (2011).
[Crossref]

Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P. S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamaura, and D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[Crossref]

Y. Kawaguchi, C.-Y. Huang, Y.-R. Wu, Q. Yan, C.-C. Pan, Y. Zhao, S. Tanaka, K. Fujito, D. Feezell, C. G. V. de Walle, S. P. DenBaars, and S. Nakamaura, “Influence of polarity on carrier transport in semipolar(202¯1¯) and(202¯1¯) multiple-quantum-well light-emitting diodes, ” Appl. Phys. Lett. 100(23), 231110 (2012).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamaura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in semipolar(202¯1¯) InGaN/GaN quantum well, ” Appl. Phys. Lett. 104(11), 111113 (2014).
[Crossref]

S. Marcinkevičius, Y. Zhao, K. M. Kelchner, S. Nakamaura, S. P. DenBaars, and J. S. Speck, “Near-field investigation of spatial variations of(202¯1¯) InGaN quantum well emission spectra, ” Appl. Phys. Lett. 103(13), 131116 (2013).
[Crossref]

Electron. Lett. (1)

D. Yevick and W. Streifer, “Radiative and nonradiative recombination law in lightly doped InGaAsP lasers,” Electron. Lett. 19(24), 1012–1014 (1983).
[Crossref]

IEEE Photonics Technol. Lett. (2)

R. X. G. Ferreira, E. Xie, J. J. D. McKendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. V. Penty, I. H. White, D. C. O’Brien, and M. D. Dawson, “High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications,” IEEE Photonics Technol. Lett. 28(19), 2023–2026 (2016).
[Crossref]

A. Rashidi, M. Monavarian, A. Aragon, S. Okur, M. Nami, A. Rishinaramangalam, S. Mishkat-Ul-Masabih, and D. Feezell, “High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication,” IEEE Photonics Technol. Lett. 29(4), 381–384 (2017).
[Crossref]

J. Appl. Phys. (4)

A. Rashidi, M. Nami, M. Monavarian, A. Aragon, K. DaVico, F. Ayoub, S. Mishkat-Ul-Masabih, A. K. Rishinaramangalam, and D. Feezell, “Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes,” J. Appl. Phys. 122(3), 035706 (2017).
[Crossref]

H.-H. Huang and Y.-R. Wu, “Light emission polarization properties of semipolar InGaN/GaN quantum well,” J. Appl. Phys. 107(5), 053112 (2010).
[Crossref]

S.-H. Park and D. Ahn, “High optical polarization ratio of semipolar(202¯1¯) -oriented InGaN/GaN quantum wells and comparison with experiment, ” J. Appl. Phys. 112(9), 093106 (2012).
[Crossref]

T.-J. Yang, R. Shivaraman, J. S. Speck, and Y.-R. Wu, “The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior,” J. Appl. Phys. 116(11), 113104 (2014).
[Crossref]

J. Disp. Technol. (1)

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting,” J. Disp. Technol. 9, 190–198 (2013).
[Crossref]

J. Phys. Condens. Matter (1)

S. Khatsevich and D. H. Rich, “The effects of crystallographic orientation and strain on the properties of excitonic emission from wurtzite InGaN/GaN quantum wells,” J. Phys. Condens. Matter 20(21), 215223 (2008).
[Crossref]

New J. Phys. (1)

E. Kioupakis, Q. Yan, D. Steiauf, and C. G. V. de Walle, “Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices,” New J. Phys. 15(12), 125006 (2013).
[Crossref]

Opt. Express (1)

Phys. Rev. (2)

W. Shockley and W. T. Read, “Statistics of the Recombinations of Holes and Electrons,” Phys. Rev. 87(5), 835–842 (1952).
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R. N. Hall, “Electron-Hole Recombination in Germanium,” Phys. Rev. 87(2), 387 (1952).
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Phys. Rev. B (1)

E. Kioupakis, D. Steiauf, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “First-principles calculations of indirect Auger recombination in nitride semiconductors,” Phys. Rev. B 92(3), 035207 (2015).
[Crossref]

Phys. Rev. B Condens. Matter (1)

D. Huang, J.-I. Chyi, and H. Morkoç, “Carrier effects on the excitonic absorption in GaAs quantum-well structures: Phase-space filling,” Phys. Rev. B Condens. Matter 42(8), 5147–5153 (1990).
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S. Rajbhandari, J. J. D. McKendry, J. Herrnsdorf, H. Chun, G. Faulkner, H. Haas, I. M. Watson, D. O’Brien, and M. D. Dawson, “A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications,” Semicond. Sci. Technol. 32(2), 023001 (2017).
[Crossref]

T. Melo, Y.-L. Hu, C. Weisbuch, M. C. Schmidt, A. David, B. Ellis, C. Poblenz, Y.-D. Lin, M. R. Krames, and J. W. Raring, “Gain comparison in polar and nonpolar/semipolar gallium-nitride-based laser diodes,” Semicond. Sci. Technol. 27(2), 024015 (2012).
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L. A. Coldren, S. W. Corzine, and M. L. Mashanovitch, Diode Lasers and Photonic Integrated Circuits (John Wiley & Sons, 2012).

Y.-R. Wu, C.-Y. Huang, Y. Zhao, and J. S. Speck, “8 - Nonpolar and semipolar LEDs,” in Nitride Semiconductor Light-Emitting Diodes (LEDs) (Woodhead Publishing, 2014), pp. 250–275.

C. Jones, C.-H. Teng, Q. Yan, P.-C. Ku, and E. Kioupakis, “Impact of Anderson localization on carrier recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes,” ArXiv170206009 Cond-Mat (2017).

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Figures (5)

Fig. 1
Fig. 1 (a) Differential carrier lifetime and (b) internal-quantum efficiency as a function of current density for the semipolar ( 2 0 2 ¯ 1 ¯ ) LED.
Fig. 2
Fig. 2 Calculated carrier density ( n ) as a function of injected current density ( J ) for semipolar (black circles) and c-plane (blue circles) LEDs. The c-plane data is obtained from [21] and is adjusted to account for the difference in active layer thicknesses (12 nm semipolar vs 15 nm c-plane).
Fig. 3
Fig. 3 (a) IQE and DLT vs. carrier density, (b) radiative, nonradiative, and total DLT vs. carrier density, and (c) radiative, nonradiative, and total PL lifetime vs carrier density.
Fig. 4
Fig. 4 (a),   G N R / n , (b),   G R / n 2 and (c)   G N R / n 3 as a function of carrier density calculated from the n-dependent radiative and nonradiative lifetimes. The dashed lines indicate the fitting by the ABC model.
Fig. 5
Fig. 5 The ratio G R / n 2 G N R / n 3 as a function of carrier density for semipolar (black circles) and c-plane (blue circles) from [21]. The dashed lines indicate the extracted B 0 C 0 values from the fittings.

Tables (1)

Tables Icon

Table 1 Recombination parameters for semipolar and polar InGaN/GaN LEDs

Equations (6)

Equations on this page are rendered with MathJax. Learn more.

n = 0 G τ Δ n d G .
G = J e × d
τ Δ n R 1 = d G R d n = η I Q E τ Δ n 1 + G × d η I Q E d n
τ Δ n N R 1 = d G N R d n = ( 1 η I Q E ) τ Δ n 1 G × d η I Q E d n .
G R = G η I Q E = B 0 ( 1 + ( n n * ) ) n 2
G N R = G ( 1 η I Q E ) = A ( n ) n + C 0 ( 1 + ( n n * ) ) n 3

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