Abstract

A strategy to realize ZnO-based near-white-light electroluminescence (EL) was proposed by utilizing and regulating the intrinsic defect-related emissions of solution-processed ZnO nanocrystals (NCs). Prototype near-white light-emitting diodes (LEDs) based upon this strategy were demonstrated by using n-ZnO NCs/n-Si isotype heterojunctions. The emission color of the n-ZnO NCs/n-Si isotype heterojunction LEDs was tuned toward near white by using an Al-doped ZnO (AZO) spectral “scissor” which can tailor the green light more severely, rather than the blue or red light. Moreover, quantum size effect was clearly observed in both the photoluminescence (PL) and EL spectra via the redshift of the near-band-edge UV emission of the ZnO NCs. The strategy using AZO spectral “scissors” to regulate the VO-related green emission of ZnO may present a promising pathway to realize ZnO-based white-light LEDs.

© 2017 Optical Society of America

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2017 (2)

Z. Chen, B. Li, X. Mo, K. Zhou, S. Li, Z. Song, H. Lei, J. Wen, Z. Zhu, and G. Fang, “Improved light emission from n-ZnO/p-Si heterojunction with HfO2 as an electron blocking layer,” J. Lumin. 184(0), 211–216 (2017).
[Crossref]

Y. Xia, P. Wang, G. He, M. Zhang, S. Shi, Y. Liu, and Z. Sun, “Microstructure, opotoelectrical and pre-strain dependent electrical properties of AZO films on flexible glass substrates for flexible electronics,” Surf. Coat. Tech. 320(25), 34–38 (2017).
[Crossref]

2016 (1)

2015 (1)

Z. G. Zang and X. S. Tang, “Enhanced fluorescence imaging performance of hydrophobic colloidal ZnO nanoparticles by a facile method,” J. Alloys Compd. 619, 98–101 (2015).
[Crossref]

2014 (4)

X. Y. Liu, C. X. Shan, C. Jiao, S. P. Wang, H. F. Zhao, and D. Z. Shen, “Pure ultraviolet emission from ZnO nanowire-based p-n heterostructures,” Opt. Lett. 39(3), 422–425 (2014).
[Crossref] [PubMed]

J. Oliva, L. P. Mayen, E. D. I. Rosa, L. A. Diaz-Torres, A. T. Castro, and P. Salas, “Tunable white light from photo- and electroluminescence of ZnO nanoparticles,” J. Phys. D Appl. Phys. 47(1), 015104 (2014).
[Crossref]

Y. Yang, Y. Li, C. Wang, C. Zhu, C. Lv, X. Ma, and D. Yang, “Rare-earth doped ZnO films: a material platform to realize multicolor and near-infrared electroluminescence,” Adv. Opt. Mater. 2(3), 240–244 (2014).
[Crossref]

X. Mo, H. Long, H. Wang, S. Li, Z. Chen, J. Wan, Y. Feng, Y. Liu, Y. Ouyang, and G. Fang, “Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaN heterojunction diodes by using high-k HfO2 electron blocking layer,” Appl. Phys. Lett. 105(6), 063505 (2014).
[Crossref]

2013 (8)

G. Rani and P. D. Sahare, “Structural and spectroscopic characterizations of ZnO quantum dots annealed at different temperatures,” J. Mater. Sci. Technol. 29(11), 1035–1039 (2013).
[Crossref]

Q. Yang, Y. Liu, C. Pan, J. Chen, X. Wen, and Z. L. Wang, “Largely enhanced efficiency in ZnO nanowire/p-polymer hybridized inorganic/organic ultraviolet light-emitting diode by piezo-phototronic effect,” Nano Lett. 13(2), 607–613 (2013).
[Crossref] [PubMed]

R. Deng, B. Yao, Y. F. Li, Y. Xu, J. C. Li, B. H. Li, Z. Z. Zhang, L. G. Zhang, H. F. Zhao, and D. Z. Shen, “Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode,” J. Lumin. 134(0), 240–243 (2013).
[Crossref]

B. O. Jung, Y. H. Kwon, D. J. Seo, D. S. Lee, and H. K. Cho, “Ultraviolet light emitting diode based on p-NiO/n-ZnO nanowire heterojunction,” J. Cryst. Growth 370(5), 314–318 (2013).
[Crossref]

J. Gomez and O. Tigli, “Zinc oxide nanostructures: from growth to application,” J. Mater. Sci. 48(2), 612–624 (2013).
[Crossref]

Z. Zang, A. Nakamura, and J. Temmyo, “Single cuprous oxide films synthesized by radical oxidation at low temperature for PV application,” Opt. Express 21(9), 11448–11456 (2013).
[Crossref] [PubMed]

X. Xu, C. Xu, X. Wang, Y. Lin, J. Dai, and J. Hu, “Control mechanism behind broad fluorescence from violet to orange in ZnO quantum dots,” CrystEngComm 15(5), 977–981 (2013).
[Crossref]

C. Pan, L. Dong, G. Zhu, S. Niu, R. Yu, Q. Yang, Y. Liu, and Z. L. Wang, “High-resolution electroluminescent imaging of pressure distribution using a piezoelectric,” Nat. Photonics 7(9), 752–758 (2013).
[Crossref]

2012 (5)

D. I. Son, B. W. Kwon, D. H. Park, W. S. Seo, Y. Yi, B. Angadi, C. L. Lee, and W. K. Choi, “Emissive ZnO-graphene quantum dots for white-light-emitting diodes,” Nat. Nanotechnol. 7(7), 465–471 (2012).
[Crossref] [PubMed]

H. Huang, G. Fang, X. Mo, H. Long, H. Wang, S. Li, Y. Li, Y. Zhang, C. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[Crossref]

E. Nannen, T. Kümmell, A. Ebbers, and G. Bacher, “p-Si/n-ZnO Nanocrystal Heterojunction Light Emitting Device,” Appl. Phys. Express 5(3), 035001 (2012).
[Crossref]

Q. Zhang, J. Qi, X. Li, F. Yi, Z. Wang, and Y. Zhang, “Electrically pumped lasing from single ZnO micro/nanowire and poly(3,4-ethylenedioxythiophene):poly (styrenexulfonate) hybrid heterostructures,” Appl. Phys. Lett. 101(4), 043119 (2012).
[Crossref]

H. Huang, G. Fang, Y. Li, S. Li, X. Mo, H. Long, H. Wang, D. L. Carroll, and X. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

2011 (5)

N. H. Alvi, K. Ul Hasan, O. Nur, and M. Willander, “The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes,” Nanoscale Res. Lett. 6(1), 130 (2011).
[Crossref] [PubMed]

T. Toyama, H. Kawasaki, K. Itatani, and H. Okamoto, “Top-emission ultraviolet-light-emitting diodes containing solution-processed ZnO nanocrystals,” Appl. Phys. Express 4(6), 065005 (2011).
[Crossref]

J. Dai, C. X. Xu, and X. W. Sun, “ZnO-microrod/p-GaN heterostructured whispering-gallery-mode microlaser diodes,” Adv. Mater. 23(35), 4115–4119 (2011).
[Crossref] [PubMed]

K. Kim, T. Moon, J. Kim, and S. Kim, “Electrically driven lasing in light-emitting devices composed of n-ZnO and p-Si nanowires,” Nanotechnology 22(24), 245203 (2011).
[Crossref] [PubMed]

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref] [PubMed]

2010 (3)

O. Lupan, T. Pauporté, and B. Viana, “Low-voltage UV-electroluminescence from ZnO-nanowire Array/p-GaN light-emitting diodes,” Adv. Mater. 22(30), 3298–3302 (2010).
[Crossref] [PubMed]

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

T. Toyama, H. Takeuchi, D. Yamaguchi, H. Kawasaki, K. Itatani, and H. Okamoto, “Solution-processed ZnO nanocrystals in thin-film light-emitting diodes for printed electronics,” J. Appl. Phys. 108(8), 084302 (2010).
[Crossref]

2009 (4)

X. W. Sun, B. Ling, J. L. Zhao, S. T. Tan, Y. Yang, Y. Q. Shen, Z. L. Dong, and X. C. Li, “Ultraviolet emission from a ZnO rod homojunction light-emitting diode,” Appl. Phys. Lett. 95(13), 133124 (2009).
[Crossref]

J. Y. Wang, C. Y. Lee, Y. T. Chen, C. T. Chen, Y. L. Chen, C. F. Lin, and Y. F. Chen, “Double side electroluminescence from p-NiO/n-ZnO nanowire heterojunctions,” Appl. Phys. Lett. 95(13), 131117 (2009).
[Crossref]

D. I. Son, C. H. You, W. T. Kim, and T. W. Kim, “White light-emitting diodes fabricated utilizing hybrid polymer-colloidal ZnO quantum dots,” Nanotechnology 20(36), 365206 (2009).
[Crossref] [PubMed]

H. Zeng, S. Yang, X. Xu, and W. Cai, “Dramatic excitation dependence of strong and stable blue luminescence of ZnO hollow nanoparticles,” Appl. Phys. Lett. 95(19), 191904 (2009).
[Crossref]

2008 (6)

Y. W. Zhang, X. M. Li, W. D. Yu, X. D. Gao, Y. F. Gu, C. Yang, J. L. Zhao, X. W. Sun, S. T. Tan, J. F. Kong, and W. Z. Shen, “Epitaxial growth and luminescence properties of ZnO-based heterojunction light-emitting diode on Si(1 1 1) substrate by pulsed-laser deposition,” J. Phys. D Appl. Phys. 41(20), 205105 (2008).
[Crossref]

X. W. Sun, J. L. Zhao, S. T. Tan, L. H. Tan, C. H. Tung, G. Q. Lo, D. L. Kwong, Y. W. Zhang, X. M. Li, and K. L. Teo, “Epitaxially grown n-ZnO/MgO/TiN/n+-Si (111) heterostructured light-emitting diode,” Appl. Phys. Lett. 92(11), 111113 (2008).
[Crossref]

S. T. Tan, X. W. Sun, J. L. Zhao, S. Iwan, Z. H. Cen, T. P. Chen, J. D. Ye, G. Q. Lo, D. L. Kwong, and K. L. Teo, “Ultraviolet and visible electroluminescence from n-ZnO/SiOx/(n, p)-Si heterostructured light-emitting diodes,” Appl. Phys. Lett. 93(1), 013506 (2008).
[Crossref]

Y. Y. Xi, Y. F. Hsu, A. B. Djurišić, A. M. C. Ng, W. K. Chan, H. L. Tam, and K. W. Cheah, “NiO/ZnO light emitting diodes by solution-based growth,” Appl. Phys. Lett. 92(11), 113505 (2008).
[Crossref]

X. W. Sun, J. Z. Huang, J. X. Wang, and Z. Xu, “A ZnO Nanorod Inorganic/Organic Heterostructure Light-Emitting Diode Emitting at 342 nm,” Nano Lett. 8(4), 1219–1223 (2008).
[Crossref] [PubMed]

H. Sun, Q. Zhang, J. Zhang, T. Deng, and J. Wu, “Electroluminescence from ZnO nanowires with a p-ZnO film/n-ZnO nanowire homojunction,” Appl. Phys. B 90(3), 543–546 (2008).
[Crossref]

2006 (3)

A. Isamu and A. Hiroshi, “Breakthroughs in improving crystal quality of GaN and Invention of the p-n junction blue-light-emitting diode,” J. Appl. Phys. 45(12), 9001–9010 (2006).
[Crossref]

P. Chen, X. Ma, and D. Yang, “Fairly pure ultraviolet electroluminescence from ZnO-based light-emitting devices,” Appl. Phys. Lett. 89(11), 111112 (2006).
[Crossref]

Y. L. Yang, H. W. Yan, Z. P. Fu, B. F. Yang, L. S. Xia, Y. D. Xu, J. Zuo, and F. Q. Li, “Photoluminescence and Raman studies of electrochemically as-grown and annealed ZnO films,” Solid State Commun. 138(10–11), 521–525 (2006).
[Crossref]

2005 (1)

K. Prabakar, C. Kim, and C. Lee, “UV, violet and blue-green luminescence from RF sputter deposited ZnO:Al thin films,” Cryst. Res. Technol. 40(12), 1150–1154 (2005).
[Crossref]

2004 (1)

H. S. Kang, J. S. Kang, J. W. Kim, and S. Y. Lee, “Annealing effect on the property of ultraviolet and green emissions of ZnO thin films,” J. Appl. Phys. 95(3), 1246–1250 (2004).
[Crossref]

2001 (2)

X. L. Wu, G. G. Siu, C. L. Fu, and H. C. Ong, “Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films,” Appl. Phys. Lett. 78(16), 2285–2287 (2001).
[Crossref]

D. C. Look, “Recent advances in ZnO materials and devices,” Mater. Sci. Eng. B 80(1–3), 383–387 (2001).
[Crossref]

2000 (1)

A. F. Kohan, G. Ceder, D. Morgan, and C. G. Van de Walle, “First-principles study of native point defects in ZnO,” Phys. Rev. B 61(22), 15019–15027 (2000).
[Crossref]

1997 (1)

K. H. Kim, K. C. Park, and D. Y. Ma, “Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by radio frequency magnetron sputtering,” J. Appl. Phys. 81(12), 7764–7772 (1997).
[Crossref]

1991 (1)

N. Shuji, M. Takashi, and S. Masayuki, “High-power GaN P-N junction blue-light-emitting diodes,” Jpn. J. Appl. Phys. 30(2), L1998–L2001 (1991).
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Alvi, N. H.

N. H. Alvi, K. Ul Hasan, O. Nur, and M. Willander, “The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes,” Nanoscale Res. Lett. 6(1), 130 (2011).
[Crossref] [PubMed]

Angadi, B.

D. I. Son, B. W. Kwon, D. H. Park, W. S. Seo, Y. Yi, B. Angadi, C. L. Lee, and W. K. Choi, “Emissive ZnO-graphene quantum dots for white-light-emitting diodes,” Nat. Nanotechnol. 7(7), 465–471 (2012).
[Crossref] [PubMed]

Bacher, G.

E. Nannen, T. Kümmell, A. Ebbers, and G. Bacher, “p-Si/n-ZnO Nanocrystal Heterojunction Light Emitting Device,” Appl. Phys. Express 5(3), 035001 (2012).
[Crossref]

Cai, W.

H. Zeng, S. Yang, X. Xu, and W. Cai, “Dramatic excitation dependence of strong and stable blue luminescence of ZnO hollow nanoparticles,” Appl. Phys. Lett. 95(19), 191904 (2009).
[Crossref]

Carroll, D. L.

H. Huang, G. Fang, Y. Li, S. Li, X. Mo, H. Long, H. Wang, D. L. Carroll, and X. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

H. Huang, G. Fang, X. Mo, H. Long, H. Wang, S. Li, Y. Li, Y. Zhang, C. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[Crossref]

Castro, A. T.

J. Oliva, L. P. Mayen, E. D. I. Rosa, L. A. Diaz-Torres, A. T. Castro, and P. Salas, “Tunable white light from photo- and electroluminescence of ZnO nanoparticles,” J. Phys. D Appl. Phys. 47(1), 015104 (2014).
[Crossref]

Ceder, G.

A. F. Kohan, G. Ceder, D. Morgan, and C. G. Van de Walle, “First-principles study of native point defects in ZnO,” Phys. Rev. B 61(22), 15019–15027 (2000).
[Crossref]

Cen, Z. H.

S. T. Tan, X. W. Sun, J. L. Zhao, S. Iwan, Z. H. Cen, T. P. Chen, J. D. Ye, G. Q. Lo, D. L. Kwong, and K. L. Teo, “Ultraviolet and visible electroluminescence from n-ZnO/SiOx/(n, p)-Si heterostructured light-emitting diodes,” Appl. Phys. Lett. 93(1), 013506 (2008).
[Crossref]

Chan, W. K.

Y. Y. Xi, Y. F. Hsu, A. B. Djurišić, A. M. C. Ng, W. K. Chan, H. L. Tam, and K. W. Cheah, “NiO/ZnO light emitting diodes by solution-based growth,” Appl. Phys. Lett. 92(11), 113505 (2008).
[Crossref]

Cheah, K. W.

Y. Y. Xi, Y. F. Hsu, A. B. Djurišić, A. M. C. Ng, W. K. Chan, H. L. Tam, and K. W. Cheah, “NiO/ZnO light emitting diodes by solution-based growth,” Appl. Phys. Lett. 92(11), 113505 (2008).
[Crossref]

Chen, C. T.

J. Y. Wang, C. Y. Lee, Y. T. Chen, C. T. Chen, Y. L. Chen, C. F. Lin, and Y. F. Chen, “Double side electroluminescence from p-NiO/n-ZnO nanowire heterojunctions,” Appl. Phys. Lett. 95(13), 131117 (2009).
[Crossref]

Chen, J.

Q. Yang, Y. Liu, C. Pan, J. Chen, X. Wen, and Z. L. Wang, “Largely enhanced efficiency in ZnO nanowire/p-polymer hybridized inorganic/organic ultraviolet light-emitting diode by piezo-phototronic effect,” Nano Lett. 13(2), 607–613 (2013).
[Crossref] [PubMed]

Chen, P.

P. Chen, X. Ma, and D. Yang, “Fairly pure ultraviolet electroluminescence from ZnO-based light-emitting devices,” Appl. Phys. Lett. 89(11), 111112 (2006).
[Crossref]

Chen, T. P.

S. T. Tan, X. W. Sun, J. L. Zhao, S. Iwan, Z. H. Cen, T. P. Chen, J. D. Ye, G. Q. Lo, D. L. Kwong, and K. L. Teo, “Ultraviolet and visible electroluminescence from n-ZnO/SiOx/(n, p)-Si heterostructured light-emitting diodes,” Appl. Phys. Lett. 93(1), 013506 (2008).
[Crossref]

Chen, Y. F.

J. Y. Wang, C. Y. Lee, Y. T. Chen, C. T. Chen, Y. L. Chen, C. F. Lin, and Y. F. Chen, “Double side electroluminescence from p-NiO/n-ZnO nanowire heterojunctions,” Appl. Phys. Lett. 95(13), 131117 (2009).
[Crossref]

Chen, Y. L.

J. Y. Wang, C. Y. Lee, Y. T. Chen, C. T. Chen, Y. L. Chen, C. F. Lin, and Y. F. Chen, “Double side electroluminescence from p-NiO/n-ZnO nanowire heterojunctions,” Appl. Phys. Lett. 95(13), 131117 (2009).
[Crossref]

Chen, Y. T.

J. Y. Wang, C. Y. Lee, Y. T. Chen, C. T. Chen, Y. L. Chen, C. F. Lin, and Y. F. Chen, “Double side electroluminescence from p-NiO/n-ZnO nanowire heterojunctions,” Appl. Phys. Lett. 95(13), 131117 (2009).
[Crossref]

Chen, Z.

Z. Chen, B. Li, X. Mo, K. Zhou, S. Li, Z. Song, H. Lei, J. Wen, Z. Zhu, and G. Fang, “Improved light emission from n-ZnO/p-Si heterojunction with HfO2 as an electron blocking layer,” J. Lumin. 184(0), 211–216 (2017).
[Crossref]

X. Mo, H. Long, H. Wang, S. Li, Z. Chen, J. Wan, Y. Feng, Y. Liu, Y. Ouyang, and G. Fang, “Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaN heterojunction diodes by using high-k HfO2 electron blocking layer,” Appl. Phys. Lett. 105(6), 063505 (2014).
[Crossref]

Chernyak, L.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref] [PubMed]

Cho, H. K.

B. O. Jung, Y. H. Kwon, D. J. Seo, D. S. Lee, and H. K. Cho, “Ultraviolet light emitting diode based on p-NiO/n-ZnO nanowire heterojunction,” J. Cryst. Growth 370(5), 314–318 (2013).
[Crossref]

Choi, S.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Choi, W. K.

D. I. Son, B. W. Kwon, D. H. Park, W. S. Seo, Y. Yi, B. Angadi, C. L. Lee, and W. K. Choi, “Emissive ZnO-graphene quantum dots for white-light-emitting diodes,” Nat. Nanotechnol. 7(7), 465–471 (2012).
[Crossref] [PubMed]

Chu, S.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref] [PubMed]

Dai, J.

X. Xu, C. Xu, X. Wang, Y. Lin, J. Dai, and J. Hu, “Control mechanism behind broad fluorescence from violet to orange in ZnO quantum dots,” CrystEngComm 15(5), 977–981 (2013).
[Crossref]

J. Dai, C. X. Xu, and X. W. Sun, “ZnO-microrod/p-GaN heterostructured whispering-gallery-mode microlaser diodes,” Adv. Mater. 23(35), 4115–4119 (2011).
[Crossref] [PubMed]

Deng, R.

R. Deng, B. Yao, Y. F. Li, Y. Xu, J. C. Li, B. H. Li, Z. Z. Zhang, L. G. Zhang, H. F. Zhao, and D. Z. Shen, “Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode,” J. Lumin. 134(0), 240–243 (2013).
[Crossref]

Deng, T.

H. Sun, Q. Zhang, J. Zhang, T. Deng, and J. Wu, “Electroluminescence from ZnO nanowires with a p-ZnO film/n-ZnO nanowire homojunction,” Appl. Phys. B 90(3), 543–546 (2008).
[Crossref]

Diaz-Torres, L. A.

J. Oliva, L. P. Mayen, E. D. I. Rosa, L. A. Diaz-Torres, A. T. Castro, and P. Salas, “Tunable white light from photo- and electroluminescence of ZnO nanoparticles,” J. Phys. D Appl. Phys. 47(1), 015104 (2014).
[Crossref]

Djurišic, A. B.

Y. Y. Xi, Y. F. Hsu, A. B. Djurišić, A. M. C. Ng, W. K. Chan, H. L. Tam, and K. W. Cheah, “NiO/ZnO light emitting diodes by solution-based growth,” Appl. Phys. Lett. 92(11), 113505 (2008).
[Crossref]

Dong, L.

C. Pan, L. Dong, G. Zhu, S. Niu, R. Yu, Q. Yang, Y. Liu, and Z. L. Wang, “High-resolution electroluminescent imaging of pressure distribution using a piezoelectric,” Nat. Photonics 7(9), 752–758 (2013).
[Crossref]

Dong, Z. L.

X. W. Sun, B. Ling, J. L. Zhao, S. T. Tan, Y. Yang, Y. Q. Shen, Z. L. Dong, and X. C. Li, “Ultraviolet emission from a ZnO rod homojunction light-emitting diode,” Appl. Phys. Lett. 95(13), 133124 (2009).
[Crossref]

Du, J.

Dupuis, R.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Ebbers, A.

E. Nannen, T. Kümmell, A. Ebbers, and G. Bacher, “p-Si/n-ZnO Nanocrystal Heterojunction Light Emitting Device,” Appl. Phys. Express 5(3), 035001 (2012).
[Crossref]

Fang, G.

Z. Chen, B. Li, X. Mo, K. Zhou, S. Li, Z. Song, H. Lei, J. Wen, Z. Zhu, and G. Fang, “Improved light emission from n-ZnO/p-Si heterojunction with HfO2 as an electron blocking layer,” J. Lumin. 184(0), 211–216 (2017).
[Crossref]

X. Mo, H. Long, H. Wang, S. Li, Z. Chen, J. Wan, Y. Feng, Y. Liu, Y. Ouyang, and G. Fang, “Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaN heterojunction diodes by using high-k HfO2 electron blocking layer,” Appl. Phys. Lett. 105(6), 063505 (2014).
[Crossref]

H. Huang, G. Fang, Y. Li, S. Li, X. Mo, H. Long, H. Wang, D. L. Carroll, and X. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

H. Huang, G. Fang, X. Mo, H. Long, H. Wang, S. Li, Y. Li, Y. Zhang, C. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[Crossref]

Feng, Y.

X. Mo, H. Long, H. Wang, S. Li, Z. Chen, J. Wan, Y. Feng, Y. Liu, Y. Ouyang, and G. Fang, “Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaN heterojunction diodes by using high-k HfO2 electron blocking layer,” Appl. Phys. Lett. 105(6), 063505 (2014).
[Crossref]

Fu, C. L.

X. L. Wu, G. G. Siu, C. L. Fu, and H. C. Ong, “Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films,” Appl. Phys. Lett. 78(16), 2285–2287 (2001).
[Crossref]

Fu, Z. P.

Y. L. Yang, H. W. Yan, Z. P. Fu, B. F. Yang, L. S. Xia, Y. D. Xu, J. Zuo, and F. Q. Li, “Photoluminescence and Raman studies of electrochemically as-grown and annealed ZnO films,” Solid State Commun. 138(10–11), 521–525 (2006).
[Crossref]

Gao, X. D.

Y. W. Zhang, X. M. Li, W. D. Yu, X. D. Gao, Y. F. Gu, C. Yang, J. L. Zhao, X. W. Sun, S. T. Tan, J. F. Kong, and W. Z. Shen, “Epitaxial growth and luminescence properties of ZnO-based heterojunction light-emitting diode on Si(1 1 1) substrate by pulsed-laser deposition,” J. Phys. D Appl. Phys. 41(20), 205105 (2008).
[Crossref]

Gomez, J.

J. Gomez and O. Tigli, “Zinc oxide nanostructures: from growth to application,” J. Mater. Sci. 48(2), 612–624 (2013).
[Crossref]

Gu, Y. F.

Y. W. Zhang, X. M. Li, W. D. Yu, X. D. Gao, Y. F. Gu, C. Yang, J. L. Zhao, X. W. Sun, S. T. Tan, J. F. Kong, and W. Z. Shen, “Epitaxial growth and luminescence properties of ZnO-based heterojunction light-emitting diode on Si(1 1 1) substrate by pulsed-laser deposition,” J. Phys. D Appl. Phys. 41(20), 205105 (2008).
[Crossref]

He, G.

Y. Xia, P. Wang, G. He, M. Zhang, S. Shi, Y. Liu, and Z. Sun, “Microstructure, opotoelectrical and pre-strain dependent electrical properties of AZO films on flexible glass substrates for flexible electronics,” Surf. Coat. Tech. 320(25), 34–38 (2017).
[Crossref]

Hiroshi, A.

A. Isamu and A. Hiroshi, “Breakthroughs in improving crystal quality of GaN and Invention of the p-n junction blue-light-emitting diode,” J. Appl. Phys. 45(12), 9001–9010 (2006).
[Crossref]

Hsu, Y. F.

Y. Y. Xi, Y. F. Hsu, A. B. Djurišić, A. M. C. Ng, W. K. Chan, H. L. Tam, and K. W. Cheah, “NiO/ZnO light emitting diodes by solution-based growth,” Appl. Phys. Lett. 92(11), 113505 (2008).
[Crossref]

Hu, J.

X. Xu, C. Xu, X. Wang, Y. Lin, J. Dai, and J. Hu, “Control mechanism behind broad fluorescence from violet to orange in ZnO quantum dots,” CrystEngComm 15(5), 977–981 (2013).
[Crossref]

Hu, Y.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Huang, H.

H. Huang, G. Fang, X. Mo, H. Long, H. Wang, S. Li, Y. Li, Y. Zhang, C. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[Crossref]

H. Huang, G. Fang, Y. Li, S. Li, X. Mo, H. Long, H. Wang, D. L. Carroll, and X. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

Huang, J. Z.

X. W. Sun, J. Z. Huang, J. X. Wang, and Z. Xu, “A ZnO Nanorod Inorganic/Organic Heterostructure Light-Emitting Diode Emitting at 342 nm,” Nano Lett. 8(4), 1219–1223 (2008).
[Crossref] [PubMed]

Isamu, A.

A. Isamu and A. Hiroshi, “Breakthroughs in improving crystal quality of GaN and Invention of the p-n junction blue-light-emitting diode,” J. Appl. Phys. 45(12), 9001–9010 (2006).
[Crossref]

Itatani, K.

T. Toyama, H. Kawasaki, K. Itatani, and H. Okamoto, “Top-emission ultraviolet-light-emitting diodes containing solution-processed ZnO nanocrystals,” Appl. Phys. Express 4(6), 065005 (2011).
[Crossref]

T. Toyama, H. Takeuchi, D. Yamaguchi, H. Kawasaki, K. Itatani, and H. Okamoto, “Solution-processed ZnO nanocrystals in thin-film light-emitting diodes for printed electronics,” J. Appl. Phys. 108(8), 084302 (2010).
[Crossref]

Iwan, S.

S. T. Tan, X. W. Sun, J. L. Zhao, S. Iwan, Z. H. Cen, T. P. Chen, J. D. Ye, G. Q. Lo, D. L. Kwong, and K. L. Teo, “Ultraviolet and visible electroluminescence from n-ZnO/SiOx/(n, p)-Si heterostructured light-emitting diodes,” Appl. Phys. Lett. 93(1), 013506 (2008).
[Crossref]

Jiao, C.

Jung, B. O.

B. O. Jung, Y. H. Kwon, D. J. Seo, D. S. Lee, and H. K. Cho, “Ultraviolet light emitting diode based on p-NiO/n-ZnO nanowire heterojunction,” J. Cryst. Growth 370(5), 314–318 (2013).
[Crossref]

Kang, H. S.

H. S. Kang, J. S. Kang, J. W. Kim, and S. Y. Lee, “Annealing effect on the property of ultraviolet and green emissions of ZnO thin films,” J. Appl. Phys. 95(3), 1246–1250 (2004).
[Crossref]

Kang, J. S.

H. S. Kang, J. S. Kang, J. W. Kim, and S. Y. Lee, “Annealing effect on the property of ultraviolet and green emissions of ZnO thin films,” J. Appl. Phys. 95(3), 1246–1250 (2004).
[Crossref]

Kawasaki, H.

T. Toyama, H. Kawasaki, K. Itatani, and H. Okamoto, “Top-emission ultraviolet-light-emitting diodes containing solution-processed ZnO nanocrystals,” Appl. Phys. Express 4(6), 065005 (2011).
[Crossref]

T. Toyama, H. Takeuchi, D. Yamaguchi, H. Kawasaki, K. Itatani, and H. Okamoto, “Solution-processed ZnO nanocrystals in thin-film light-emitting diodes for printed electronics,” J. Appl. Phys. 108(8), 084302 (2010).
[Crossref]

Kim, C.

K. Prabakar, C. Kim, and C. Lee, “UV, violet and blue-green luminescence from RF sputter deposited ZnO:Al thin films,” Cryst. Res. Technol. 40(12), 1150–1154 (2005).
[Crossref]

Kim, H. J.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Kim, J.

K. Kim, T. Moon, J. Kim, and S. Kim, “Electrically driven lasing in light-emitting devices composed of n-ZnO and p-Si nanowires,” Nanotechnology 22(24), 245203 (2011).
[Crossref] [PubMed]

Kim, J. W.

H. S. Kang, J. S. Kang, J. W. Kim, and S. Y. Lee, “Annealing effect on the property of ultraviolet and green emissions of ZnO thin films,” J. Appl. Phys. 95(3), 1246–1250 (2004).
[Crossref]

Kim, K.

K. Kim, T. Moon, J. Kim, and S. Kim, “Electrically driven lasing in light-emitting devices composed of n-ZnO and p-Si nanowires,” Nanotechnology 22(24), 245203 (2011).
[Crossref] [PubMed]

Kim, K. H.

K. H. Kim, K. C. Park, and D. Y. Ma, “Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by radio frequency magnetron sputtering,” J. Appl. Phys. 81(12), 7764–7772 (1997).
[Crossref]

Kim, S.

K. Kim, T. Moon, J. Kim, and S. Kim, “Electrically driven lasing in light-emitting devices composed of n-ZnO and p-Si nanowires,” Nanotechnology 22(24), 245203 (2011).
[Crossref] [PubMed]

Kim, T. W.

D. I. Son, C. H. You, W. T. Kim, and T. W. Kim, “White light-emitting diodes fabricated utilizing hybrid polymer-colloidal ZnO quantum dots,” Nanotechnology 20(36), 365206 (2009).
[Crossref] [PubMed]

Kim, W. T.

D. I. Son, C. H. You, W. T. Kim, and T. W. Kim, “White light-emitting diodes fabricated utilizing hybrid polymer-colloidal ZnO quantum dots,” Nanotechnology 20(36), 365206 (2009).
[Crossref] [PubMed]

Kohan, A. F.

A. F. Kohan, G. Ceder, D. Morgan, and C. G. Van de Walle, “First-principles study of native point defects in ZnO,” Phys. Rev. B 61(22), 15019–15027 (2000).
[Crossref]

Kong, J.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref] [PubMed]

Kong, J. F.

Y. W. Zhang, X. M. Li, W. D. Yu, X. D. Gao, Y. F. Gu, C. Yang, J. L. Zhao, X. W. Sun, S. T. Tan, J. F. Kong, and W. Z. Shen, “Epitaxial growth and luminescence properties of ZnO-based heterojunction light-emitting diode on Si(1 1 1) substrate by pulsed-laser deposition,” J. Phys. D Appl. Phys. 41(20), 205105 (2008).
[Crossref]

Kümmell, T.

E. Nannen, T. Kümmell, A. Ebbers, and G. Bacher, “p-Si/n-ZnO Nanocrystal Heterojunction Light Emitting Device,” Appl. Phys. Express 5(3), 035001 (2012).
[Crossref]

Kwon, B. W.

D. I. Son, B. W. Kwon, D. H. Park, W. S. Seo, Y. Yi, B. Angadi, C. L. Lee, and W. K. Choi, “Emissive ZnO-graphene quantum dots for white-light-emitting diodes,” Nat. Nanotechnol. 7(7), 465–471 (2012).
[Crossref] [PubMed]

Kwon, Y. H.

B. O. Jung, Y. H. Kwon, D. J. Seo, D. S. Lee, and H. K. Cho, “Ultraviolet light emitting diode based on p-NiO/n-ZnO nanowire heterojunction,” J. Cryst. Growth 370(5), 314–318 (2013).
[Crossref]

Kwong, D. L.

S. T. Tan, X. W. Sun, J. L. Zhao, S. Iwan, Z. H. Cen, T. P. Chen, J. D. Ye, G. Q. Lo, D. L. Kwong, and K. L. Teo, “Ultraviolet and visible electroluminescence from n-ZnO/SiOx/(n, p)-Si heterostructured light-emitting diodes,” Appl. Phys. Lett. 93(1), 013506 (2008).
[Crossref]

X. W. Sun, J. L. Zhao, S. T. Tan, L. H. Tan, C. H. Tung, G. Q. Lo, D. L. Kwong, Y. W. Zhang, X. M. Li, and K. L. Teo, “Epitaxially grown n-ZnO/MgO/TiN/n+-Si (111) heterostructured light-emitting diode,” Appl. Phys. Lett. 92(11), 111113 (2008).
[Crossref]

Lee, C.

K. Prabakar, C. Kim, and C. Lee, “UV, violet and blue-green luminescence from RF sputter deposited ZnO:Al thin films,” Cryst. Res. Technol. 40(12), 1150–1154 (2005).
[Crossref]

Lee, C. L.

D. I. Son, B. W. Kwon, D. H. Park, W. S. Seo, Y. Yi, B. Angadi, C. L. Lee, and W. K. Choi, “Emissive ZnO-graphene quantum dots for white-light-emitting diodes,” Nat. Nanotechnol. 7(7), 465–471 (2012).
[Crossref] [PubMed]

Lee, C. Y.

J. Y. Wang, C. Y. Lee, Y. T. Chen, C. T. Chen, Y. L. Chen, C. F. Lin, and Y. F. Chen, “Double side electroluminescence from p-NiO/n-ZnO nanowire heterojunctions,” Appl. Phys. Lett. 95(13), 131117 (2009).
[Crossref]

Lee, D. S.

B. O. Jung, Y. H. Kwon, D. J. Seo, D. S. Lee, and H. K. Cho, “Ultraviolet light emitting diode based on p-NiO/n-ZnO nanowire heterojunction,” J. Cryst. Growth 370(5), 314–318 (2013).
[Crossref]

Lee, S. Y.

H. S. Kang, J. S. Kang, J. W. Kim, and S. Y. Lee, “Annealing effect on the property of ultraviolet and green emissions of ZnO thin films,” J. Appl. Phys. 95(3), 1246–1250 (2004).
[Crossref]

Lei, H.

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Zang, Z. G.

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H. Zeng, S. Yang, X. Xu, and W. Cai, “Dramatic excitation dependence of strong and stable blue luminescence of ZnO hollow nanoparticles,” Appl. Phys. Lett. 95(19), 191904 (2009).
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Zeng, X.

Zhang, J.

H. Sun, Q. Zhang, J. Zhang, T. Deng, and J. Wu, “Electroluminescence from ZnO nanowires with a p-ZnO film/n-ZnO nanowire homojunction,” Appl. Phys. B 90(3), 543–546 (2008).
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R. Deng, B. Yao, Y. F. Li, Y. Xu, J. C. Li, B. H. Li, Z. Z. Zhang, L. G. Zhang, H. F. Zhao, and D. Z. Shen, “Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode,” J. Lumin. 134(0), 240–243 (2013).
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Zhang, M.

Y. Xia, P. Wang, G. He, M. Zhang, S. Shi, Y. Liu, and Z. Sun, “Microstructure, opotoelectrical and pre-strain dependent electrical properties of AZO films on flexible glass substrates for flexible electronics,” Surf. Coat. Tech. 320(25), 34–38 (2017).
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Q. Zhang, J. Qi, X. Li, F. Yi, Z. Wang, and Y. Zhang, “Electrically pumped lasing from single ZnO micro/nanowire and poly(3,4-ethylenedioxythiophene):poly (styrenexulfonate) hybrid heterostructures,” Appl. Phys. Lett. 101(4), 043119 (2012).
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Zhang, Y. W.

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Figures (5)

Fig. 1
Fig. 1 (a) Schematic diagram of the AZO/n-ZnO NCs/n-Si isotype heterojunction LEDs. (b) XRD patterns of the ZnO NC film grown on n-Si substrate with and without annealing. (c)-(e) Surface SEM images of LED 1, LED 2 and LED 3, respectively. The insets are the corresponding zoomed-in SEM images with scale bars of 500 nm. (f) Cross-sectional SEM image of LED 3.
Fig. 2
Fig. 2 (a) RT PL spectra excited by a 325 nm He-Cd laser and (b) I-V characteristics of LED 1, LED 2 and LED 3. (c) Chromaticity coordinates (CIE 1931) of LED 1, LED 2 and LED 3 and (d) their corresponding EL spectra with a same ordinate under the forward injection current of 90 mA.
Fig. 3
Fig. 3 (a) RT EL spectra of LED 1, LED 2 and LED 3 under different forward injection currents.
Fig. 4
Fig. 4 (a)-(c) Peak deconvolutions of the EL spectra with Gaussian functions for LED 1, LED 2 and LED 3, respectively. (d) Fitting peak intensity from peak 1 to 5, as concluded from the peak-deconvolution results.
Fig. 5
Fig. 5 (a) Transmittance spectra of the AZO film deposited on Glass substrates. (b) The energy band diagram of LED 3.

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