Abstract

Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (202¯1) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm2 and a threshold voltage of 10.3 V in a semipolar (202¯1) III-nitride LD with ZnO top cladding.

© 2017 Optical Society of America

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References

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2016 (3)

A. J. Mughal, S. Oh, A. Myzaferi, S. Nakamura, J. S. Speck, and S. P. DenBaars, “High-power LEDs using Ga-doped ZnO current-spreading layers,” Electron. Lett. 52(4), 304–306 (2016).
[Crossref]

A. Myzaferi, A. H. Reading, D. A. Cohen, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes,” Appl. Phys. Lett. 109(6), 061109 (2016).
[Crossref]

M. Kawaguchi, O. Imafuji, S. Nozaki, H. Hagino, S. Takigawa, T. Katayama, and T. Tanaka, “Optical-loss supressed InGaN laser diodes using undoped thick waveguide structure,” Proc. SPIE 9748, 974818 (2016).
[Crossref]

2015 (1)

L. Y. Kuritzky and J. S. Speck, “Lighting for the 21st century with laser diodes based on non-basal plane orientations of GaN,” MRS Commun. 5(03), 463–473 (2015).
[Crossref]

2014 (1)

Y. Zhao, R. M. Farrell, Y. Wu, and J. S. Speck, “Valence band states and polarized optical emissiono from nonpolar and semipolar III-nitride quantum well optoelectronic devices,” Jpn. J. Appl. Phys. 53(10), 100206 (2014).
[Crossref]

2013 (3)

D. Sizov, R. Bhat, J. Wang, D. Allen, B. Paddock, and C. E. Zah, “Development of semipolar laser diode,” Phys. Status Solidi Appl. Mater. Sci. 210(3), 459–465 (2013).
[Crossref]

S. Keller, R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. Denbaars, and J. S. Speck, “Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells,” Jpn. J. Appl. Phys. 52(8S), 08JC10 (2013).
[Crossref]

M. T. Hardy, C. O. Holder, D. F. Feezell, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. Denbaars, “Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes,” Appl. Phys. Lett. 103(8), 081103 (2013).
[Crossref]

2012 (1)

2011 (3)

C. Chua, Z. Yang, C. Knollenberg, M. Teepe, B. Cheng, A. Strittmatter, D. Bour, and N. M. Johnson, “InAlGaN optical emitters-laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes,” Proc. SPIE 7939, 793918 (2011).
[Crossref]

J. Kim, H. Kim, and S. N. Lee, “Thermal degradation in InGaN quantum wells in violet and blue GaN-based laser diodes,” Curr. Appl. Phys. 11(4), S167–S170 (2011).
[Crossref]

R. M. Farrell, D. A. Haeger, P. S. Hsu, K. Fujito, D. F. Feezell, S. P. Denbaars, J. S. Speck, and S. Nakamura, “Determination of internal paramters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 99, 17 (2011).

2010 (3)

E. Kioupakis, P. Rinke, and C. G. Van De Walle, “Determination of internal loss in nitride lasers from first principles,” Appl. Phys. Express 3(8), 082101 (2010).
[Crossref]

J. W. Raring, M. C. Schmidt, C. Poblenz, Y. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. Denbaars, and S. Nakamura, “High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

B. Cheng, C. L. Chua, Z. Yang, M. Teepe, C. Knollenberg, A. Strittmatter, and N. Johnson, “Nitride laser diodes with nonepitaxial cladding layers,” IEEE Photonics Technol. Lett. 22(5), 329–331 (2010).
[Crossref]

2009 (4)

D. Bour, C. Chua, Z. Yang, M. Teepe, and N. Johnson, “Silver-clad nitride semiconductor laser diode,” Appl. Phys. Lett. 94(4), 041124 (2009).
[Crossref]

J. S. Speck and S. F. Chichibu, “Nonpolar and semipolar group III-nitride-based materials,” MRS Bull. 34(05), 304–312 (2009).
[Crossref]

J. J. Richardson and F. F. Lange, “Controlling low temperature aqueous synthesis of ZnO. 1. Thermodynamic analysis,” Cryst. Growth Des. 9(6), 2570–2575 (2009).
[Crossref]

J. J. Richardson and F. F. Lange, “Controlling low termpature aqueous synthesis of ZnO. 2. A novel continuous circulation reactor,” Cryst. Growth Des. 9(6), 2576–2581 (2009).
[Crossref]

2007 (1)

R. Goldhahn, A. T. Winzer, A. Dadgar, A. Krost, O. Weidemann, and M. Eickhoff, “Modulation spectrocsopy of AlGaN/GaN heterostructures: The influence of electron-hole interaction,” Phys. Status Solidi Appl. Mater. Sci. 204(2), 447–458 (2007).
[Crossref]

2005 (1)

S.-N. Lee, J. Son, H. Paek, T. Sakong, W. Lee, K. Kim, E. Yoon, J. Kim, Y.-H. Cho, Y. Lee, S. Kim, D. Noh, O. Nam, and Y. Park, “Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD,” J. Cryst. Growth 275(1-2), 1041–1045 (2005).
[Crossref]

2002 (2)

D. H. Yoon, K. S. Lee, J. B. Yoo, and T. Y. Seong, “Reduction of threading dislocations in InGaN/GaN double heterostructure through the introduction of low-temperature GaN intermediate layer,” Jpn. J. Appl. Phys. 41(Part 1, No. 3A), 1253–1258 (2002).
[Crossref]

E. Kaminska, A. Piotrowska, K. Golaszewska, M. Guziewicz, R. Kruszka, A. Kudla, T. Ochalski, A. Barcz, T. Dietl, F. Matsukura, M. Sawicki, A. Wawro, M. Zielinski, J. Jasinski, and Z. Liliental-Weber, “Transparent ZnO-based ohmic contact to p-GaN,” Proc. MRS 693, 831 (2002).

1998 (1)

V. Srikant and D. Clarke, “On the optical band gap of zinc oxide,” J. Appl. Phys. 83(10), 5447–5451 (1998).
[Crossref]

1992 (1)

S. Nakamura, N. Iwasa, T. Mukai, and M. Senoh, “Hole compensation mechanism of p-type GaN films,” Jpn. J. Appl. Phys. 31(Part 1, No. 5A), 1258–1266 (1992).
[Crossref]

1991 (1)

S. Nakamura, T. Mukai, and M. Senoh, “High-power GaN P-N junction blue-light-emitting diodes,” Jpn. J. Appl. Phys. 30(Part 2, No. 12A), L1998 (1991).
[Crossref]

Allen, D.

D. Sizov, R. Bhat, J. Wang, D. Allen, B. Paddock, and C. E. Zah, “Development of semipolar laser diode,” Phys. Status Solidi Appl. Mater. Sci. 210(3), 459–465 (2013).
[Crossref]

Barcz, A.

E. Kaminska, A. Piotrowska, K. Golaszewska, M. Guziewicz, R. Kruszka, A. Kudla, T. Ochalski, A. Barcz, T. Dietl, F. Matsukura, M. Sawicki, A. Wawro, M. Zielinski, J. Jasinski, and Z. Liliental-Weber, “Transparent ZnO-based ohmic contact to p-GaN,” Proc. MRS 693, 831 (2002).

Bhat, R.

D. Sizov, R. Bhat, J. Wang, D. Allen, B. Paddock, and C. E. Zah, “Development of semipolar laser diode,” Phys. Status Solidi Appl. Mater. Sci. 210(3), 459–465 (2013).
[Crossref]

Bour, D.

C. Chua, Z. Yang, C. Knollenberg, M. Teepe, B. Cheng, A. Strittmatter, D. Bour, and N. M. Johnson, “InAlGaN optical emitters-laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes,” Proc. SPIE 7939, 793918 (2011).
[Crossref]

D. Bour, C. Chua, Z. Yang, M. Teepe, and N. Johnson, “Silver-clad nitride semiconductor laser diode,” Appl. Phys. Lett. 94(4), 041124 (2009).
[Crossref]

Chang, Y.

J. W. Raring, M. C. Schmidt, C. Poblenz, Y. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. Denbaars, and S. Nakamura, “High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

Cheng, B.

C. Chua, Z. Yang, C. Knollenberg, M. Teepe, B. Cheng, A. Strittmatter, D. Bour, and N. M. Johnson, “InAlGaN optical emitters-laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes,” Proc. SPIE 7939, 793918 (2011).
[Crossref]

B. Cheng, C. L. Chua, Z. Yang, M. Teepe, C. Knollenberg, A. Strittmatter, and N. Johnson, “Nitride laser diodes with nonepitaxial cladding layers,” IEEE Photonics Technol. Lett. 22(5), 329–331 (2010).
[Crossref]

Chichibu, S. F.

J. S. Speck and S. F. Chichibu, “Nonpolar and semipolar group III-nitride-based materials,” MRS Bull. 34(05), 304–312 (2009).
[Crossref]

Cho, Y.-H.

S.-N. Lee, J. Son, H. Paek, T. Sakong, W. Lee, K. Kim, E. Yoon, J. Kim, Y.-H. Cho, Y. Lee, S. Kim, D. Noh, O. Nam, and Y. Park, “Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD,” J. Cryst. Growth 275(1-2), 1041–1045 (2005).
[Crossref]

Chua, C.

C. Chua, Z. Yang, C. Knollenberg, M. Teepe, B. Cheng, A. Strittmatter, D. Bour, and N. M. Johnson, “InAlGaN optical emitters-laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes,” Proc. SPIE 7939, 793918 (2011).
[Crossref]

D. Bour, C. Chua, Z. Yang, M. Teepe, and N. Johnson, “Silver-clad nitride semiconductor laser diode,” Appl. Phys. Lett. 94(4), 041124 (2009).
[Crossref]

Chua, C. L.

B. Cheng, C. L. Chua, Z. Yang, M. Teepe, C. Knollenberg, A. Strittmatter, and N. Johnson, “Nitride laser diodes with nonepitaxial cladding layers,” IEEE Photonics Technol. Lett. 22(5), 329–331 (2010).
[Crossref]

Clarke, D.

V. Srikant and D. Clarke, “On the optical band gap of zinc oxide,” J. Appl. Phys. 83(10), 5447–5451 (1998).
[Crossref]

Cohen, D. A.

A. Myzaferi, A. H. Reading, D. A. Cohen, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes,” Appl. Phys. Lett. 109(6), 061109 (2016).
[Crossref]

M. T. Hardy, C. O. Holder, D. F. Feezell, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. Denbaars, “Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes,” Appl. Phys. Lett. 103(8), 081103 (2013).
[Crossref]

Craig, R.

J. W. Raring, M. C. Schmidt, C. Poblenz, Y. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. Denbaars, and S. Nakamura, “High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

Dadgar, A.

R. Goldhahn, A. T. Winzer, A. Dadgar, A. Krost, O. Weidemann, and M. Eickhoff, “Modulation spectrocsopy of AlGaN/GaN heterostructures: The influence of electron-hole interaction,” Phys. Status Solidi Appl. Mater. Sci. 204(2), 447–458 (2007).
[Crossref]

DenBaars, S. P.

A. Myzaferi, A. H. Reading, D. A. Cohen, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes,” Appl. Phys. Lett. 109(6), 061109 (2016).
[Crossref]

A. J. Mughal, S. Oh, A. Myzaferi, S. Nakamura, J. S. Speck, and S. P. DenBaars, “High-power LEDs using Ga-doped ZnO current-spreading layers,” Electron. Lett. 52(4), 304–306 (2016).
[Crossref]

M. T. Hardy, C. O. Holder, D. F. Feezell, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. Denbaars, “Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes,” Appl. Phys. Lett. 103(8), 081103 (2013).
[Crossref]

S. Keller, R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. Denbaars, and J. S. Speck, “Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells,” Jpn. J. Appl. Phys. 52(8S), 08JC10 (2013).
[Crossref]

A. H. Reading, J. J. Richardson, C.-C. Pan, S. Nakamura, and S. P. DenBaars, “High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy,” Opt. Express 20(S1), A13–A19 (2012).
[Crossref] [PubMed]

R. M. Farrell, D. A. Haeger, P. S. Hsu, K. Fujito, D. F. Feezell, S. P. Denbaars, J. S. Speck, and S. Nakamura, “Determination of internal paramters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 99, 17 (2011).

J. W. Raring, M. C. Schmidt, C. Poblenz, Y. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. Denbaars, and S. Nakamura, “High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

Dietl, T.

E. Kaminska, A. Piotrowska, K. Golaszewska, M. Guziewicz, R. Kruszka, A. Kudla, T. Ochalski, A. Barcz, T. Dietl, F. Matsukura, M. Sawicki, A. Wawro, M. Zielinski, J. Jasinski, and Z. Liliental-Weber, “Transparent ZnO-based ohmic contact to p-GaN,” Proc. MRS 693, 831 (2002).

Eickhoff, M.

R. Goldhahn, A. T. Winzer, A. Dadgar, A. Krost, O. Weidemann, and M. Eickhoff, “Modulation spectrocsopy of AlGaN/GaN heterostructures: The influence of electron-hole interaction,” Phys. Status Solidi Appl. Mater. Sci. 204(2), 447–458 (2007).
[Crossref]

Farrell, R. M.

A. Myzaferi, A. H. Reading, D. A. Cohen, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes,” Appl. Phys. Lett. 109(6), 061109 (2016).
[Crossref]

Y. Zhao, R. M. Farrell, Y. Wu, and J. S. Speck, “Valence band states and polarized optical emissiono from nonpolar and semipolar III-nitride quantum well optoelectronic devices,” Jpn. J. Appl. Phys. 53(10), 100206 (2014).
[Crossref]

S. Keller, R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. Denbaars, and J. S. Speck, “Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells,” Jpn. J. Appl. Phys. 52(8S), 08JC10 (2013).
[Crossref]

R. M. Farrell, D. A. Haeger, P. S. Hsu, K. Fujito, D. F. Feezell, S. P. Denbaars, J. S. Speck, and S. Nakamura, “Determination of internal paramters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 99, 17 (2011).

Feezell, D. F.

M. T. Hardy, C. O. Holder, D. F. Feezell, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. Denbaars, “Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes,” Appl. Phys. Lett. 103(8), 081103 (2013).
[Crossref]

R. M. Farrell, D. A. Haeger, P. S. Hsu, K. Fujito, D. F. Feezell, S. P. Denbaars, J. S. Speck, and S. Nakamura, “Determination of internal paramters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 99, 17 (2011).

Fujito, K.

R. M. Farrell, D. A. Haeger, P. S. Hsu, K. Fujito, D. F. Feezell, S. P. Denbaars, J. S. Speck, and S. Nakamura, “Determination of internal paramters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 99, 17 (2011).

Golaszewska, K.

E. Kaminska, A. Piotrowska, K. Golaszewska, M. Guziewicz, R. Kruszka, A. Kudla, T. Ochalski, A. Barcz, T. Dietl, F. Matsukura, M. Sawicki, A. Wawro, M. Zielinski, J. Jasinski, and Z. Liliental-Weber, “Transparent ZnO-based ohmic contact to p-GaN,” Proc. MRS 693, 831 (2002).

Goldhahn, R.

R. Goldhahn, A. T. Winzer, A. Dadgar, A. Krost, O. Weidemann, and M. Eickhoff, “Modulation spectrocsopy of AlGaN/GaN heterostructures: The influence of electron-hole interaction,” Phys. Status Solidi Appl. Mater. Sci. 204(2), 447–458 (2007).
[Crossref]

Guziewicz, M.

E. Kaminska, A. Piotrowska, K. Golaszewska, M. Guziewicz, R. Kruszka, A. Kudla, T. Ochalski, A. Barcz, T. Dietl, F. Matsukura, M. Sawicki, A. Wawro, M. Zielinski, J. Jasinski, and Z. Liliental-Weber, “Transparent ZnO-based ohmic contact to p-GaN,” Proc. MRS 693, 831 (2002).

Haeger, D. A.

R. M. Farrell, D. A. Haeger, P. S. Hsu, K. Fujito, D. F. Feezell, S. P. Denbaars, J. S. Speck, and S. Nakamura, “Determination of internal paramters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 99, 17 (2011).

Hagino, H.

M. Kawaguchi, O. Imafuji, S. Nozaki, H. Hagino, S. Takigawa, T. Katayama, and T. Tanaka, “Optical-loss supressed InGaN laser diodes using undoped thick waveguide structure,” Proc. SPIE 9748, 974818 (2016).
[Crossref]

Hardy, M. T.

M. T. Hardy, C. O. Holder, D. F. Feezell, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. Denbaars, “Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes,” Appl. Phys. Lett. 103(8), 081103 (2013).
[Crossref]

Holder, C. O.

M. T. Hardy, C. O. Holder, D. F. Feezell, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. Denbaars, “Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes,” Appl. Phys. Lett. 103(8), 081103 (2013).
[Crossref]

Hsu, P. S.

R. M. Farrell, D. A. Haeger, P. S. Hsu, K. Fujito, D. F. Feezell, S. P. Denbaars, J. S. Speck, and S. Nakamura, “Determination of internal paramters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 99, 17 (2011).

Imafuji, O.

M. Kawaguchi, O. Imafuji, S. Nozaki, H. Hagino, S. Takigawa, T. Katayama, and T. Tanaka, “Optical-loss supressed InGaN laser diodes using undoped thick waveguide structure,” Proc. SPIE 9748, 974818 (2016).
[Crossref]

Iveland, J.

J. W. Raring, M. C. Schmidt, C. Poblenz, Y. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. Denbaars, and S. Nakamura, “High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

Iwasa, N.

S. Nakamura, N. Iwasa, T. Mukai, and M. Senoh, “Hole compensation mechanism of p-type GaN films,” Jpn. J. Appl. Phys. 31(Part 1, No. 5A), 1258–1266 (1992).
[Crossref]

Iza, M.

S. Keller, R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. Denbaars, and J. S. Speck, “Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells,” Jpn. J. Appl. Phys. 52(8S), 08JC10 (2013).
[Crossref]

Jasinski, J.

E. Kaminska, A. Piotrowska, K. Golaszewska, M. Guziewicz, R. Kruszka, A. Kudla, T. Ochalski, A. Barcz, T. Dietl, F. Matsukura, M. Sawicki, A. Wawro, M. Zielinski, J. Jasinski, and Z. Liliental-Weber, “Transparent ZnO-based ohmic contact to p-GaN,” Proc. MRS 693, 831 (2002).

Johnson, N.

B. Cheng, C. L. Chua, Z. Yang, M. Teepe, C. Knollenberg, A. Strittmatter, and N. Johnson, “Nitride laser diodes with nonepitaxial cladding layers,” IEEE Photonics Technol. Lett. 22(5), 329–331 (2010).
[Crossref]

D. Bour, C. Chua, Z. Yang, M. Teepe, and N. Johnson, “Silver-clad nitride semiconductor laser diode,” Appl. Phys. Lett. 94(4), 041124 (2009).
[Crossref]

Johnson, N. M.

C. Chua, Z. Yang, C. Knollenberg, M. Teepe, B. Cheng, A. Strittmatter, D. Bour, and N. M. Johnson, “InAlGaN optical emitters-laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes,” Proc. SPIE 7939, 793918 (2011).
[Crossref]

Kaminska, E.

E. Kaminska, A. Piotrowska, K. Golaszewska, M. Guziewicz, R. Kruszka, A. Kudla, T. Ochalski, A. Barcz, T. Dietl, F. Matsukura, M. Sawicki, A. Wawro, M. Zielinski, J. Jasinski, and Z. Liliental-Weber, “Transparent ZnO-based ohmic contact to p-GaN,” Proc. MRS 693, 831 (2002).

Katayama, T.

M. Kawaguchi, O. Imafuji, S. Nozaki, H. Hagino, S. Takigawa, T. Katayama, and T. Tanaka, “Optical-loss supressed InGaN laser diodes using undoped thick waveguide structure,” Proc. SPIE 9748, 974818 (2016).
[Crossref]

Kawaguchi, M.

M. Kawaguchi, O. Imafuji, S. Nozaki, H. Hagino, S. Takigawa, T. Katayama, and T. Tanaka, “Optical-loss supressed InGaN laser diodes using undoped thick waveguide structure,” Proc. SPIE 9748, 974818 (2016).
[Crossref]

Keller, S.

S. Keller, R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. Denbaars, and J. S. Speck, “Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells,” Jpn. J. Appl. Phys. 52(8S), 08JC10 (2013).
[Crossref]

Kim, H.

J. Kim, H. Kim, and S. N. Lee, “Thermal degradation in InGaN quantum wells in violet and blue GaN-based laser diodes,” Curr. Appl. Phys. 11(4), S167–S170 (2011).
[Crossref]

Kim, J.

J. Kim, H. Kim, and S. N. Lee, “Thermal degradation in InGaN quantum wells in violet and blue GaN-based laser diodes,” Curr. Appl. Phys. 11(4), S167–S170 (2011).
[Crossref]

S.-N. Lee, J. Son, H. Paek, T. Sakong, W. Lee, K. Kim, E. Yoon, J. Kim, Y.-H. Cho, Y. Lee, S. Kim, D. Noh, O. Nam, and Y. Park, “Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD,” J. Cryst. Growth 275(1-2), 1041–1045 (2005).
[Crossref]

Kim, K.

S.-N. Lee, J. Son, H. Paek, T. Sakong, W. Lee, K. Kim, E. Yoon, J. Kim, Y.-H. Cho, Y. Lee, S. Kim, D. Noh, O. Nam, and Y. Park, “Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD,” J. Cryst. Growth 275(1-2), 1041–1045 (2005).
[Crossref]

Kim, S.

S.-N. Lee, J. Son, H. Paek, T. Sakong, W. Lee, K. Kim, E. Yoon, J. Kim, Y.-H. Cho, Y. Lee, S. Kim, D. Noh, O. Nam, and Y. Park, “Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD,” J. Cryst. Growth 275(1-2), 1041–1045 (2005).
[Crossref]

Kioupakis, E.

E. Kioupakis, P. Rinke, and C. G. Van De Walle, “Determination of internal loss in nitride lasers from first principles,” Appl. Phys. Express 3(8), 082101 (2010).
[Crossref]

Knollenberg, C.

C. Chua, Z. Yang, C. Knollenberg, M. Teepe, B. Cheng, A. Strittmatter, D. Bour, and N. M. Johnson, “InAlGaN optical emitters-laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes,” Proc. SPIE 7939, 793918 (2011).
[Crossref]

B. Cheng, C. L. Chua, Z. Yang, M. Teepe, C. Knollenberg, A. Strittmatter, and N. Johnson, “Nitride laser diodes with nonepitaxial cladding layers,” IEEE Photonics Technol. Lett. 22(5), 329–331 (2010).
[Crossref]

Krames, M. R.

J. W. Raring, M. C. Schmidt, C. Poblenz, Y. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. Denbaars, and S. Nakamura, “High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

Krost, A.

R. Goldhahn, A. T. Winzer, A. Dadgar, A. Krost, O. Weidemann, and M. Eickhoff, “Modulation spectrocsopy of AlGaN/GaN heterostructures: The influence of electron-hole interaction,” Phys. Status Solidi Appl. Mater. Sci. 204(2), 447–458 (2007).
[Crossref]

Kruszka, R.

E. Kaminska, A. Piotrowska, K. Golaszewska, M. Guziewicz, R. Kruszka, A. Kudla, T. Ochalski, A. Barcz, T. Dietl, F. Matsukura, M. Sawicki, A. Wawro, M. Zielinski, J. Jasinski, and Z. Liliental-Weber, “Transparent ZnO-based ohmic contact to p-GaN,” Proc. MRS 693, 831 (2002).

Kudla, A.

E. Kaminska, A. Piotrowska, K. Golaszewska, M. Guziewicz, R. Kruszka, A. Kudla, T. Ochalski, A. Barcz, T. Dietl, F. Matsukura, M. Sawicki, A. Wawro, M. Zielinski, J. Jasinski, and Z. Liliental-Weber, “Transparent ZnO-based ohmic contact to p-GaN,” Proc. MRS 693, 831 (2002).

Kuritzky, L. Y.

L. Y. Kuritzky and J. S. Speck, “Lighting for the 21st century with laser diodes based on non-basal plane orientations of GaN,” MRS Commun. 5(03), 463–473 (2015).
[Crossref]

Lange, F. F.

J. J. Richardson and F. F. Lange, “Controlling low temperature aqueous synthesis of ZnO. 1. Thermodynamic analysis,” Cryst. Growth Des. 9(6), 2570–2575 (2009).
[Crossref]

J. J. Richardson and F. F. Lange, “Controlling low termpature aqueous synthesis of ZnO. 2. A novel continuous circulation reactor,” Cryst. Growth Des. 9(6), 2576–2581 (2009).
[Crossref]

Lee, K. S.

D. H. Yoon, K. S. Lee, J. B. Yoo, and T. Y. Seong, “Reduction of threading dislocations in InGaN/GaN double heterostructure through the introduction of low-temperature GaN intermediate layer,” Jpn. J. Appl. Phys. 41(Part 1, No. 3A), 1253–1258 (2002).
[Crossref]

Lee, S. N.

J. Kim, H. Kim, and S. N. Lee, “Thermal degradation in InGaN quantum wells in violet and blue GaN-based laser diodes,” Curr. Appl. Phys. 11(4), S167–S170 (2011).
[Crossref]

Lee, S.-N.

S.-N. Lee, J. Son, H. Paek, T. Sakong, W. Lee, K. Kim, E. Yoon, J. Kim, Y.-H. Cho, Y. Lee, S. Kim, D. Noh, O. Nam, and Y. Park, “Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD,” J. Cryst. Growth 275(1-2), 1041–1045 (2005).
[Crossref]

Lee, W.

S.-N. Lee, J. Son, H. Paek, T. Sakong, W. Lee, K. Kim, E. Yoon, J. Kim, Y.-H. Cho, Y. Lee, S. Kim, D. Noh, O. Nam, and Y. Park, “Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD,” J. Cryst. Growth 275(1-2), 1041–1045 (2005).
[Crossref]

Lee, Y.

S.-N. Lee, J. Son, H. Paek, T. Sakong, W. Lee, K. Kim, E. Yoon, J. Kim, Y.-H. Cho, Y. Lee, S. Kim, D. Noh, O. Nam, and Y. Park, “Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD,” J. Cryst. Growth 275(1-2), 1041–1045 (2005).
[Crossref]

Li, B.

J. W. Raring, M. C. Schmidt, C. Poblenz, Y. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. Denbaars, and S. Nakamura, “High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

Liliental-Weber, Z.

E. Kaminska, A. Piotrowska, K. Golaszewska, M. Guziewicz, R. Kruszka, A. Kudla, T. Ochalski, A. Barcz, T. Dietl, F. Matsukura, M. Sawicki, A. Wawro, M. Zielinski, J. Jasinski, and Z. Liliental-Weber, “Transparent ZnO-based ohmic contact to p-GaN,” Proc. MRS 693, 831 (2002).

Matsukura, F.

E. Kaminska, A. Piotrowska, K. Golaszewska, M. Guziewicz, R. Kruszka, A. Kudla, T. Ochalski, A. Barcz, T. Dietl, F. Matsukura, M. Sawicki, A. Wawro, M. Zielinski, J. Jasinski, and Z. Liliental-Weber, “Transparent ZnO-based ohmic contact to p-GaN,” Proc. MRS 693, 831 (2002).

Mishra, U. K.

S. Keller, R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. Denbaars, and J. S. Speck, “Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells,” Jpn. J. Appl. Phys. 52(8S), 08JC10 (2013).
[Crossref]

Mondry, M. J.

J. W. Raring, M. C. Schmidt, C. Poblenz, Y. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. Denbaars, and S. Nakamura, “High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

Mughal, A. J.

A. J. Mughal, S. Oh, A. Myzaferi, S. Nakamura, J. S. Speck, and S. P. DenBaars, “High-power LEDs using Ga-doped ZnO current-spreading layers,” Electron. Lett. 52(4), 304–306 (2016).
[Crossref]

Mukai, T.

S. Nakamura, N. Iwasa, T. Mukai, and M. Senoh, “Hole compensation mechanism of p-type GaN films,” Jpn. J. Appl. Phys. 31(Part 1, No. 5A), 1258–1266 (1992).
[Crossref]

S. Nakamura, T. Mukai, and M. Senoh, “High-power GaN P-N junction blue-light-emitting diodes,” Jpn. J. Appl. Phys. 30(Part 2, No. 12A), L1998 (1991).
[Crossref]

Myzaferi, A.

A. J. Mughal, S. Oh, A. Myzaferi, S. Nakamura, J. S. Speck, and S. P. DenBaars, “High-power LEDs using Ga-doped ZnO current-spreading layers,” Electron. Lett. 52(4), 304–306 (2016).
[Crossref]

A. Myzaferi, A. H. Reading, D. A. Cohen, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes,” Appl. Phys. Lett. 109(6), 061109 (2016).
[Crossref]

Nakamura, S.

A. Myzaferi, A. H. Reading, D. A. Cohen, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes,” Appl. Phys. Lett. 109(6), 061109 (2016).
[Crossref]

A. J. Mughal, S. Oh, A. Myzaferi, S. Nakamura, J. S. Speck, and S. P. DenBaars, “High-power LEDs using Ga-doped ZnO current-spreading layers,” Electron. Lett. 52(4), 304–306 (2016).
[Crossref]

M. T. Hardy, C. O. Holder, D. F. Feezell, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. Denbaars, “Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes,” Appl. Phys. Lett. 103(8), 081103 (2013).
[Crossref]

S. Keller, R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. Denbaars, and J. S. Speck, “Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells,” Jpn. J. Appl. Phys. 52(8S), 08JC10 (2013).
[Crossref]

A. H. Reading, J. J. Richardson, C.-C. Pan, S. Nakamura, and S. P. DenBaars, “High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy,” Opt. Express 20(S1), A13–A19 (2012).
[Crossref] [PubMed]

R. M. Farrell, D. A. Haeger, P. S. Hsu, K. Fujito, D. F. Feezell, S. P. Denbaars, J. S. Speck, and S. Nakamura, “Determination of internal paramters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 99, 17 (2011).

J. W. Raring, M. C. Schmidt, C. Poblenz, Y. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. Denbaars, and S. Nakamura, “High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

S. Nakamura, N. Iwasa, T. Mukai, and M. Senoh, “Hole compensation mechanism of p-type GaN films,” Jpn. J. Appl. Phys. 31(Part 1, No. 5A), 1258–1266 (1992).
[Crossref]

S. Nakamura, T. Mukai, and M. Senoh, “High-power GaN P-N junction blue-light-emitting diodes,” Jpn. J. Appl. Phys. 30(Part 2, No. 12A), L1998 (1991).
[Crossref]

Nam, O.

S.-N. Lee, J. Son, H. Paek, T. Sakong, W. Lee, K. Kim, E. Yoon, J. Kim, Y.-H. Cho, Y. Lee, S. Kim, D. Noh, O. Nam, and Y. Park, “Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD,” J. Cryst. Growth 275(1-2), 1041–1045 (2005).
[Crossref]

Noh, D.

S.-N. Lee, J. Son, H. Paek, T. Sakong, W. Lee, K. Kim, E. Yoon, J. Kim, Y.-H. Cho, Y. Lee, S. Kim, D. Noh, O. Nam, and Y. Park, “Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD,” J. Cryst. Growth 275(1-2), 1041–1045 (2005).
[Crossref]

Nozaki, S.

M. Kawaguchi, O. Imafuji, S. Nozaki, H. Hagino, S. Takigawa, T. Katayama, and T. Tanaka, “Optical-loss supressed InGaN laser diodes using undoped thick waveguide structure,” Proc. SPIE 9748, 974818 (2016).
[Crossref]

Ochalski, T.

E. Kaminska, A. Piotrowska, K. Golaszewska, M. Guziewicz, R. Kruszka, A. Kudla, T. Ochalski, A. Barcz, T. Dietl, F. Matsukura, M. Sawicki, A. Wawro, M. Zielinski, J. Jasinski, and Z. Liliental-Weber, “Transparent ZnO-based ohmic contact to p-GaN,” Proc. MRS 693, 831 (2002).

Oh, S.

A. J. Mughal, S. Oh, A. Myzaferi, S. Nakamura, J. S. Speck, and S. P. DenBaars, “High-power LEDs using Ga-doped ZnO current-spreading layers,” Electron. Lett. 52(4), 304–306 (2016).
[Crossref]

Paddock, B.

D. Sizov, R. Bhat, J. Wang, D. Allen, B. Paddock, and C. E. Zah, “Development of semipolar laser diode,” Phys. Status Solidi Appl. Mater. Sci. 210(3), 459–465 (2013).
[Crossref]

Paek, H.

S.-N. Lee, J. Son, H. Paek, T. Sakong, W. Lee, K. Kim, E. Yoon, J. Kim, Y.-H. Cho, Y. Lee, S. Kim, D. Noh, O. Nam, and Y. Park, “Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD,” J. Cryst. Growth 275(1-2), 1041–1045 (2005).
[Crossref]

Pan, C.-C.

Park, Y.

S.-N. Lee, J. Son, H. Paek, T. Sakong, W. Lee, K. Kim, E. Yoon, J. Kim, Y.-H. Cho, Y. Lee, S. Kim, D. Noh, O. Nam, and Y. Park, “Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD,” J. Cryst. Growth 275(1-2), 1041–1045 (2005).
[Crossref]

Piotrowska, A.

E. Kaminska, A. Piotrowska, K. Golaszewska, M. Guziewicz, R. Kruszka, A. Kudla, T. Ochalski, A. Barcz, T. Dietl, F. Matsukura, M. Sawicki, A. Wawro, M. Zielinski, J. Jasinski, and Z. Liliental-Weber, “Transparent ZnO-based ohmic contact to p-GaN,” Proc. MRS 693, 831 (2002).

Poblenz, C.

J. W. Raring, M. C. Schmidt, C. Poblenz, Y. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. Denbaars, and S. Nakamura, “High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

Raring, J. W.

J. W. Raring, M. C. Schmidt, C. Poblenz, Y. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. Denbaars, and S. Nakamura, “High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

Reading, A. H.

A. Myzaferi, A. H. Reading, D. A. Cohen, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes,” Appl. Phys. Lett. 109(6), 061109 (2016).
[Crossref]

A. H. Reading, J. J. Richardson, C.-C. Pan, S. Nakamura, and S. P. DenBaars, “High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy,” Opt. Express 20(S1), A13–A19 (2012).
[Crossref] [PubMed]

Richardson, J. J.

A. H. Reading, J. J. Richardson, C.-C. Pan, S. Nakamura, and S. P. DenBaars, “High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy,” Opt. Express 20(S1), A13–A19 (2012).
[Crossref] [PubMed]

J. J. Richardson and F. F. Lange, “Controlling low termpature aqueous synthesis of ZnO. 2. A novel continuous circulation reactor,” Cryst. Growth Des. 9(6), 2576–2581 (2009).
[Crossref]

J. J. Richardson and F. F. Lange, “Controlling low temperature aqueous synthesis of ZnO. 1. Thermodynamic analysis,” Cryst. Growth Des. 9(6), 2570–2575 (2009).
[Crossref]

Rinke, P.

E. Kioupakis, P. Rinke, and C. G. Van De Walle, “Determination of internal loss in nitride lasers from first principles,” Appl. Phys. Express 3(8), 082101 (2010).
[Crossref]

Rudy, P.

J. W. Raring, M. C. Schmidt, C. Poblenz, Y. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. Denbaars, and S. Nakamura, “High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

Sakong, T.

S.-N. Lee, J. Son, H. Paek, T. Sakong, W. Lee, K. Kim, E. Yoon, J. Kim, Y.-H. Cho, Y. Lee, S. Kim, D. Noh, O. Nam, and Y. Park, “Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD,” J. Cryst. Growth 275(1-2), 1041–1045 (2005).
[Crossref]

Sawicki, M.

E. Kaminska, A. Piotrowska, K. Golaszewska, M. Guziewicz, R. Kruszka, A. Kudla, T. Ochalski, A. Barcz, T. Dietl, F. Matsukura, M. Sawicki, A. Wawro, M. Zielinski, J. Jasinski, and Z. Liliental-Weber, “Transparent ZnO-based ohmic contact to p-GaN,” Proc. MRS 693, 831 (2002).

Schmidt, M. C.

J. W. Raring, M. C. Schmidt, C. Poblenz, Y. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. Denbaars, and S. Nakamura, “High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

Senoh, M.

S. Nakamura, N. Iwasa, T. Mukai, and M. Senoh, “Hole compensation mechanism of p-type GaN films,” Jpn. J. Appl. Phys. 31(Part 1, No. 5A), 1258–1266 (1992).
[Crossref]

S. Nakamura, T. Mukai, and M. Senoh, “High-power GaN P-N junction blue-light-emitting diodes,” Jpn. J. Appl. Phys. 30(Part 2, No. 12A), L1998 (1991).
[Crossref]

Seong, T. Y.

D. H. Yoon, K. S. Lee, J. B. Yoo, and T. Y. Seong, “Reduction of threading dislocations in InGaN/GaN double heterostructure through the introduction of low-temperature GaN intermediate layer,” Jpn. J. Appl. Phys. 41(Part 1, No. 3A), 1253–1258 (2002).
[Crossref]

Sizov, D.

D. Sizov, R. Bhat, J. Wang, D. Allen, B. Paddock, and C. E. Zah, “Development of semipolar laser diode,” Phys. Status Solidi Appl. Mater. Sci. 210(3), 459–465 (2013).
[Crossref]

Son, J.

S.-N. Lee, J. Son, H. Paek, T. Sakong, W. Lee, K. Kim, E. Yoon, J. Kim, Y.-H. Cho, Y. Lee, S. Kim, D. Noh, O. Nam, and Y. Park, “Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD,” J. Cryst. Growth 275(1-2), 1041–1045 (2005).
[Crossref]

Speck, J. S.

A. J. Mughal, S. Oh, A. Myzaferi, S. Nakamura, J. S. Speck, and S. P. DenBaars, “High-power LEDs using Ga-doped ZnO current-spreading layers,” Electron. Lett. 52(4), 304–306 (2016).
[Crossref]

A. Myzaferi, A. H. Reading, D. A. Cohen, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes,” Appl. Phys. Lett. 109(6), 061109 (2016).
[Crossref]

L. Y. Kuritzky and J. S. Speck, “Lighting for the 21st century with laser diodes based on non-basal plane orientations of GaN,” MRS Commun. 5(03), 463–473 (2015).
[Crossref]

Y. Zhao, R. M. Farrell, Y. Wu, and J. S. Speck, “Valence band states and polarized optical emissiono from nonpolar and semipolar III-nitride quantum well optoelectronic devices,” Jpn. J. Appl. Phys. 53(10), 100206 (2014).
[Crossref]

S. Keller, R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. Denbaars, and J. S. Speck, “Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells,” Jpn. J. Appl. Phys. 52(8S), 08JC10 (2013).
[Crossref]

M. T. Hardy, C. O. Holder, D. F. Feezell, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. Denbaars, “Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes,” Appl. Phys. Lett. 103(8), 081103 (2013).
[Crossref]

R. M. Farrell, D. A. Haeger, P. S. Hsu, K. Fujito, D. F. Feezell, S. P. Denbaars, J. S. Speck, and S. Nakamura, “Determination of internal paramters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 99, 17 (2011).

J. W. Raring, M. C. Schmidt, C. Poblenz, Y. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. Denbaars, and S. Nakamura, “High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

J. S. Speck and S. F. Chichibu, “Nonpolar and semipolar group III-nitride-based materials,” MRS Bull. 34(05), 304–312 (2009).
[Crossref]

Srikant, V.

V. Srikant and D. Clarke, “On the optical band gap of zinc oxide,” J. Appl. Phys. 83(10), 5447–5451 (1998).
[Crossref]

Strittmatter, A.

C. Chua, Z. Yang, C. Knollenberg, M. Teepe, B. Cheng, A. Strittmatter, D. Bour, and N. M. Johnson, “InAlGaN optical emitters-laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes,” Proc. SPIE 7939, 793918 (2011).
[Crossref]

B. Cheng, C. L. Chua, Z. Yang, M. Teepe, C. Knollenberg, A. Strittmatter, and N. Johnson, “Nitride laser diodes with nonepitaxial cladding layers,” IEEE Photonics Technol. Lett. 22(5), 329–331 (2010).
[Crossref]

Takigawa, S.

M. Kawaguchi, O. Imafuji, S. Nozaki, H. Hagino, S. Takigawa, T. Katayama, and T. Tanaka, “Optical-loss supressed InGaN laser diodes using undoped thick waveguide structure,” Proc. SPIE 9748, 974818 (2016).
[Crossref]

Tanaka, T.

M. Kawaguchi, O. Imafuji, S. Nozaki, H. Hagino, S. Takigawa, T. Katayama, and T. Tanaka, “Optical-loss supressed InGaN laser diodes using undoped thick waveguide structure,” Proc. SPIE 9748, 974818 (2016).
[Crossref]

Teepe, M.

C. Chua, Z. Yang, C. Knollenberg, M. Teepe, B. Cheng, A. Strittmatter, D. Bour, and N. M. Johnson, “InAlGaN optical emitters-laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes,” Proc. SPIE 7939, 793918 (2011).
[Crossref]

B. Cheng, C. L. Chua, Z. Yang, M. Teepe, C. Knollenberg, A. Strittmatter, and N. Johnson, “Nitride laser diodes with nonepitaxial cladding layers,” IEEE Photonics Technol. Lett. 22(5), 329–331 (2010).
[Crossref]

D. Bour, C. Chua, Z. Yang, M. Teepe, and N. Johnson, “Silver-clad nitride semiconductor laser diode,” Appl. Phys. Lett. 94(4), 041124 (2009).
[Crossref]

Terao, Y.

S. Keller, R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. Denbaars, and J. S. Speck, “Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells,” Jpn. J. Appl. Phys. 52(8S), 08JC10 (2013).
[Crossref]

Van De Walle, C. G.

E. Kioupakis, P. Rinke, and C. G. Van De Walle, “Determination of internal loss in nitride lasers from first principles,” Appl. Phys. Express 3(8), 082101 (2010).
[Crossref]

Walters, B.

J. W. Raring, M. C. Schmidt, C. Poblenz, Y. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. Denbaars, and S. Nakamura, “High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

Wang, J.

D. Sizov, R. Bhat, J. Wang, D. Allen, B. Paddock, and C. E. Zah, “Development of semipolar laser diode,” Phys. Status Solidi Appl. Mater. Sci. 210(3), 459–465 (2013).
[Crossref]

Wawro, A.

E. Kaminska, A. Piotrowska, K. Golaszewska, M. Guziewicz, R. Kruszka, A. Kudla, T. Ochalski, A. Barcz, T. Dietl, F. Matsukura, M. Sawicki, A. Wawro, M. Zielinski, J. Jasinski, and Z. Liliental-Weber, “Transparent ZnO-based ohmic contact to p-GaN,” Proc. MRS 693, 831 (2002).

Weidemann, O.

R. Goldhahn, A. T. Winzer, A. Dadgar, A. Krost, O. Weidemann, and M. Eickhoff, “Modulation spectrocsopy of AlGaN/GaN heterostructures: The influence of electron-hole interaction,” Phys. Status Solidi Appl. Mater. Sci. 204(2), 447–458 (2007).
[Crossref]

Winzer, A. T.

R. Goldhahn, A. T. Winzer, A. Dadgar, A. Krost, O. Weidemann, and M. Eickhoff, “Modulation spectrocsopy of AlGaN/GaN heterostructures: The influence of electron-hole interaction,” Phys. Status Solidi Appl. Mater. Sci. 204(2), 447–458 (2007).
[Crossref]

Wu, Y.

Y. Zhao, R. M. Farrell, Y. Wu, and J. S. Speck, “Valence band states and polarized optical emissiono from nonpolar and semipolar III-nitride quantum well optoelectronic devices,” Jpn. J. Appl. Phys. 53(10), 100206 (2014).
[Crossref]

Yang, Z.

C. Chua, Z. Yang, C. Knollenberg, M. Teepe, B. Cheng, A. Strittmatter, D. Bour, and N. M. Johnson, “InAlGaN optical emitters-laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes,” Proc. SPIE 7939, 793918 (2011).
[Crossref]

B. Cheng, C. L. Chua, Z. Yang, M. Teepe, C. Knollenberg, A. Strittmatter, and N. Johnson, “Nitride laser diodes with nonepitaxial cladding layers,” IEEE Photonics Technol. Lett. 22(5), 329–331 (2010).
[Crossref]

D. Bour, C. Chua, Z. Yang, M. Teepe, and N. Johnson, “Silver-clad nitride semiconductor laser diode,” Appl. Phys. Lett. 94(4), 041124 (2009).
[Crossref]

Yoo, J. B.

D. H. Yoon, K. S. Lee, J. B. Yoo, and T. Y. Seong, “Reduction of threading dislocations in InGaN/GaN double heterostructure through the introduction of low-temperature GaN intermediate layer,” Jpn. J. Appl. Phys. 41(Part 1, No. 3A), 1253–1258 (2002).
[Crossref]

Yoon, D. H.

D. H. Yoon, K. S. Lee, J. B. Yoo, and T. Y. Seong, “Reduction of threading dislocations in InGaN/GaN double heterostructure through the introduction of low-temperature GaN intermediate layer,” Jpn. J. Appl. Phys. 41(Part 1, No. 3A), 1253–1258 (2002).
[Crossref]

Yoon, E.

S.-N. Lee, J. Son, H. Paek, T. Sakong, W. Lee, K. Kim, E. Yoon, J. Kim, Y.-H. Cho, Y. Lee, S. Kim, D. Noh, O. Nam, and Y. Park, “Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD,” J. Cryst. Growth 275(1-2), 1041–1045 (2005).
[Crossref]

Young, N.

S. Keller, R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. Denbaars, and J. S. Speck, “Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells,” Jpn. J. Appl. Phys. 52(8S), 08JC10 (2013).
[Crossref]

Zah, C. E.

D. Sizov, R. Bhat, J. Wang, D. Allen, B. Paddock, and C. E. Zah, “Development of semipolar laser diode,” Phys. Status Solidi Appl. Mater. Sci. 210(3), 459–465 (2013).
[Crossref]

Zhao, Y.

Y. Zhao, R. M. Farrell, Y. Wu, and J. S. Speck, “Valence band states and polarized optical emissiono from nonpolar and semipolar III-nitride quantum well optoelectronic devices,” Jpn. J. Appl. Phys. 53(10), 100206 (2014).
[Crossref]

Zielinski, M.

E. Kaminska, A. Piotrowska, K. Golaszewska, M. Guziewicz, R. Kruszka, A. Kudla, T. Ochalski, A. Barcz, T. Dietl, F. Matsukura, M. Sawicki, A. Wawro, M. Zielinski, J. Jasinski, and Z. Liliental-Weber, “Transparent ZnO-based ohmic contact to p-GaN,” Proc. MRS 693, 831 (2002).

Appl. Phys. Express (2)

J. W. Raring, M. C. Schmidt, C. Poblenz, Y. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. Denbaars, and S. Nakamura, “High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

E. Kioupakis, P. Rinke, and C. G. Van De Walle, “Determination of internal loss in nitride lasers from first principles,” Appl. Phys. Express 3(8), 082101 (2010).
[Crossref]

Appl. Phys. Lett. (4)

R. M. Farrell, D. A. Haeger, P. S. Hsu, K. Fujito, D. F. Feezell, S. P. Denbaars, J. S. Speck, and S. Nakamura, “Determination of internal paramters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 99, 17 (2011).

A. Myzaferi, A. H. Reading, D. A. Cohen, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes,” Appl. Phys. Lett. 109(6), 061109 (2016).
[Crossref]

D. Bour, C. Chua, Z. Yang, M. Teepe, and N. Johnson, “Silver-clad nitride semiconductor laser diode,” Appl. Phys. Lett. 94(4), 041124 (2009).
[Crossref]

M. T. Hardy, C. O. Holder, D. F. Feezell, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. Denbaars, “Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes,” Appl. Phys. Lett. 103(8), 081103 (2013).
[Crossref]

Cryst. Growth Des. (2)

J. J. Richardson and F. F. Lange, “Controlling low temperature aqueous synthesis of ZnO. 1. Thermodynamic analysis,” Cryst. Growth Des. 9(6), 2570–2575 (2009).
[Crossref]

J. J. Richardson and F. F. Lange, “Controlling low termpature aqueous synthesis of ZnO. 2. A novel continuous circulation reactor,” Cryst. Growth Des. 9(6), 2576–2581 (2009).
[Crossref]

Curr. Appl. Phys. (1)

J. Kim, H. Kim, and S. N. Lee, “Thermal degradation in InGaN quantum wells in violet and blue GaN-based laser diodes,” Curr. Appl. Phys. 11(4), S167–S170 (2011).
[Crossref]

Electron. Lett. (1)

A. J. Mughal, S. Oh, A. Myzaferi, S. Nakamura, J. S. Speck, and S. P. DenBaars, “High-power LEDs using Ga-doped ZnO current-spreading layers,” Electron. Lett. 52(4), 304–306 (2016).
[Crossref]

IEEE Photonics Technol. Lett. (1)

B. Cheng, C. L. Chua, Z. Yang, M. Teepe, C. Knollenberg, A. Strittmatter, and N. Johnson, “Nitride laser diodes with nonepitaxial cladding layers,” IEEE Photonics Technol. Lett. 22(5), 329–331 (2010).
[Crossref]

J. Appl. Phys. (1)

V. Srikant and D. Clarke, “On the optical band gap of zinc oxide,” J. Appl. Phys. 83(10), 5447–5451 (1998).
[Crossref]

J. Cryst. Growth (1)

S.-N. Lee, J. Son, H. Paek, T. Sakong, W. Lee, K. Kim, E. Yoon, J. Kim, Y.-H. Cho, Y. Lee, S. Kim, D. Noh, O. Nam, and Y. Park, “Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD,” J. Cryst. Growth 275(1-2), 1041–1045 (2005).
[Crossref]

Jpn. J. Appl. Phys. (5)

S. Keller, R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. Denbaars, and J. S. Speck, “Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells,” Jpn. J. Appl. Phys. 52(8S), 08JC10 (2013).
[Crossref]

D. H. Yoon, K. S. Lee, J. B. Yoo, and T. Y. Seong, “Reduction of threading dislocations in InGaN/GaN double heterostructure through the introduction of low-temperature GaN intermediate layer,” Jpn. J. Appl. Phys. 41(Part 1, No. 3A), 1253–1258 (2002).
[Crossref]

S. Nakamura, N. Iwasa, T. Mukai, and M. Senoh, “Hole compensation mechanism of p-type GaN films,” Jpn. J. Appl. Phys. 31(Part 1, No. 5A), 1258–1266 (1992).
[Crossref]

S. Nakamura, T. Mukai, and M. Senoh, “High-power GaN P-N junction blue-light-emitting diodes,” Jpn. J. Appl. Phys. 30(Part 2, No. 12A), L1998 (1991).
[Crossref]

Y. Zhao, R. M. Farrell, Y. Wu, and J. S. Speck, “Valence band states and polarized optical emissiono from nonpolar and semipolar III-nitride quantum well optoelectronic devices,” Jpn. J. Appl. Phys. 53(10), 100206 (2014).
[Crossref]

MRS Bull. (1)

J. S. Speck and S. F. Chichibu, “Nonpolar and semipolar group III-nitride-based materials,” MRS Bull. 34(05), 304–312 (2009).
[Crossref]

MRS Commun. (1)

L. Y. Kuritzky and J. S. Speck, “Lighting for the 21st century with laser diodes based on non-basal plane orientations of GaN,” MRS Commun. 5(03), 463–473 (2015).
[Crossref]

Opt. Express (1)

Phys. Status Solidi Appl. Mater. Sci. (2)

D. Sizov, R. Bhat, J. Wang, D. Allen, B. Paddock, and C. E. Zah, “Development of semipolar laser diode,” Phys. Status Solidi Appl. Mater. Sci. 210(3), 459–465 (2013).
[Crossref]

R. Goldhahn, A. T. Winzer, A. Dadgar, A. Krost, O. Weidemann, and M. Eickhoff, “Modulation spectrocsopy of AlGaN/GaN heterostructures: The influence of electron-hole interaction,” Phys. Status Solidi Appl. Mater. Sci. 204(2), 447–458 (2007).
[Crossref]

Proc. MRS (1)

E. Kaminska, A. Piotrowska, K. Golaszewska, M. Guziewicz, R. Kruszka, A. Kudla, T. Ochalski, A. Barcz, T. Dietl, F. Matsukura, M. Sawicki, A. Wawro, M. Zielinski, J. Jasinski, and Z. Liliental-Weber, “Transparent ZnO-based ohmic contact to p-GaN,” Proc. MRS 693, 831 (2002).

Proc. SPIE (2)

C. Chua, Z. Yang, C. Knollenberg, M. Teepe, B. Cheng, A. Strittmatter, D. Bour, and N. M. Johnson, “InAlGaN optical emitters-laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes,” Proc. SPIE 7939, 793918 (2011).
[Crossref]

M. Kawaguchi, O. Imafuji, S. Nozaki, H. Hagino, S. Takigawa, T. Katayama, and T. Tanaka, “Optical-loss supressed InGaN laser diodes using undoped thick waveguide structure,” Proc. SPIE 9748, 974818 (2016).
[Crossref]

Other (4)

W. Kern, Handbook of Semiconductor Wafer Cleaning Technology (Noyes Publications, 1993).

L. A. Coldren, S. W. Corzine, and M. L. Masanovic, Diode Lasers and Photonic Integrated Circuits (John Wiley & Sons, Inc., 2012).

A. H. Reading, Aqueous Synthesis of Zinc Oxide Films for GaN Optoelectronic Devices (University of California Santa Barbara, 2014).

Fimmwave version 5.3.2, Photon Design (2011).

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Figures (5)

Fig. 1
Fig. 1 (a) Cross sectional schematic of the LD with ZnO cladding. The structure consisted of a 1μm n-GaN cladding layer, a 70 nm n-In0.08Ga0.92N waveguide (WG), an active region consisting of three 4.8 nm In0.2Ga0.8N quantum wells and four 7.6 nm GaN quantum barriers, a 30 nm p-In0.08Ga0.92N WG, a 10 nm Al0.21Ga0.79N electron blocking layer (EBL), a 325 nm p-GaN layer, a 10 nm p+ GaN contact layer, and 780 nm of ZnO. The thin green layer indicates the location of the p-Al0.21Ga0.79N EBL. The ridge WG was etched to a depth of 100 nm above the top interface of the last quantum barrier. (b) Transverse mode profile and refractive index as a function of distance in the growth direction.
Fig. 2
Fig. 2 Dependence of (a) confinement factor and (b) internal mode loss on p-GaN thickness for a structure with 250 nm of ITO or ZnO in the top cladding layer.
Fig. 3
Fig. 3 Dependence of (a) threshold material gain and (b) differential efficiency on p-GaN thickness for a structure with 250 nm of ITO or ZnO in the top cladding layer.
Fig. 4
Fig. 4 Scanning electron microscope (SEM) image of the polished facet of a fully processed laser, where the epitaxial layers, SiO2, ZnO bilayer and p-contact pad are clearly visible.
Fig. 5
Fig. 5 (a) Pulsed L-I-V characteristics, (b) current dependent spectra, and (c) the far field pattern of a 1.6 μm wide by 1200 μm long LD.

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