Abstract

In this work we report, to the best of our knowledge, the first quantum well electrically-pumped microdisk lasers monolithically deposited on (001)-oriented Si substrate. The III-V laser structure was epitaxially grown by MOCVD on silicon with an intermediate MBE-grown Ge buffer. Microlasers with an InGaAs/GaAs quantum well active region were tested at room temperature. Under pulsed injection, lasing is achieved in microlasers with diameters of 23, 27, and 31 µm with a minimal threshold current density of 28 kA/cm2. Lasing spectrum is predominantly single-mode with a dominant mode linewidth as narrow as 35 pm.

© 2017 Optical Society of America

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    [Crossref]

2016 (4)

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III–V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon,” Opt. Lett. 41(7), 1664–1667 (2016).
[Crossref] [PubMed]

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources,” Appl. Phys. Lett. 109(1), 011104 (2016).
[Crossref]

V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, A. G. Fefelov, Z. F. Krasilnik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, I. V. Samartsev, E. V. Skorokhodov, M. V. Shaleev, A. A. Sushkov, A. N. Yablonskiy, P. A. Yunin, and D. V. Yurasov, “Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate,” Appl. Phys. Lett. 109(6), 061111 (2016).
[Crossref]

2015 (2)

D. V. Yurasov, A. I. Bobrov, V. M. Daniltsev, A. V. Novikov, D. A. Pavlov, E. V. Skorokhodov, M. V. Shaleev, and P. A. Yunin, “Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy,” Semiconductors 49(11), 1415–1420 (2015).
[Crossref]

N. V. Kryzhanovskaya, E. I. Moiseev, Yu. V. Kudashova, F. I. Zubov, A. A. Lipovskii, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, D. A. Livshits, M. V. Maximov, and A. E. Zhukov, “Continuous-wave lasing at 100°C in 1.3 µm quantum dot microdisk diode laser,” Electron. Lett. 51(17), 1354–1355 (2015).
[Crossref]

2014 (2)

A. Y. Liu, C. Zhang, J. Norman, A. Snyder, D. Lubyshev, J. M. Fastenau, A. W. K. Liu, A. C. Gossard, and J. E. Bowers, “High performance continuous wave 1.3 μm quantum dot lasers on silicon,” Appl. Phys. Lett. 104(4), 041104 (2014).
[Crossref]

T. T. D. Tran, R. Chen, K. W. Ng, W. S. Ko, F. Lu, and C. J. Chang-Hasnain, “Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon,” Appl. Phys. Lett. 105(11), 111105 (2014).
[Crossref]

2013 (2)

E. Stock, F. Albert, C. Hopfmann, M. Lermer, C. Schneider, S. Höfling, A. Forchel, M. Kamp, and S. Reitzenstein, “On-chip quantum optics with quantum dot microcavities,” Adv. Mater. 25(5), 707–710 (2013).
[Crossref] [PubMed]

A. D. Lee, Q. Jiang, M. Tang, Y. Zhang, A. J. Seeds, and H. Liu, “InAs/GaAs quantum-dot lasers monolithically grown on Si, Ge, and Ge-on-Si substrates,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1901107 (2013).
[Crossref]

2012 (2)

A. Lee, Q. Jiang, M. Tang, A. Seeds, and H. Liu, “Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities,” Opt. Express 20(20), 22181–22187 (2012).
[Crossref] [PubMed]

M. Munsch, J. Claudon, N. S. Malik, K. Gilbert, P. Grosse, J.-M. Gerard, F. Albert, F. Langer, T. Schlereth, M. M. Pieczarka, S. Hofling, M. Kamp, A. Forchel, and S. Reitzenstein, “Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes,” Appl. Phys. Lett. 100(3), 031111 (2012).
[Crossref]

2011 (3)

2008 (1)

R. Beanland, A. M. Sánchez, D. Childs, K. M. Groom, H. Y. Liu, D. J. Mowbray, and M. Hopkinson, “Structural analysis of life tested 1.3 μm quantum dot lasers,” J. Appl. Phys. 103(1), 014913 (2008).
[Crossref]

2003 (1)

D. Ouyang, N. N. Ledentsov, D. Bimberg, A. R. Kovsh, A. E. Zhukov, S. S. Mikhrin, and V. M. Ustinov, “High performance narrow stripe quantum-dot lasers with etched waveguide,” Semicond. Sci. Technol. 18(12), L53–L54 (2003).
[Crossref]

Albert, F.

E. Stock, F. Albert, C. Hopfmann, M. Lermer, C. Schneider, S. Höfling, A. Forchel, M. Kamp, and S. Reitzenstein, “On-chip quantum optics with quantum dot microcavities,” Adv. Mater. 25(5), 707–710 (2013).
[Crossref] [PubMed]

M. Munsch, J. Claudon, N. S. Malik, K. Gilbert, P. Grosse, J.-M. Gerard, F. Albert, F. Langer, T. Schlereth, M. M. Pieczarka, S. Hofling, M. Kamp, A. Forchel, and S. Reitzenstein, “Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes,” Appl. Phys. Lett. 100(3), 031111 (2012).
[Crossref]

Aleshkin, V. Ya.

V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, A. G. Fefelov, Z. F. Krasilnik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, I. V. Samartsev, E. V. Skorokhodov, M. V. Shaleev, A. A. Sushkov, A. N. Yablonskiy, P. A. Yunin, and D. V. Yurasov, “Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate,” Appl. Phys. Lett. 109(6), 061111 (2016).
[Crossref]

Baidus, N. V.

V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, A. G. Fefelov, Z. F. Krasilnik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, I. V. Samartsev, E. V. Skorokhodov, M. V. Shaleev, A. A. Sushkov, A. N. Yablonskiy, P. A. Yunin, and D. V. Yurasov, “Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate,” Appl. Phys. Lett. 109(6), 061111 (2016).
[Crossref]

Beanland, R.

R. Beanland, A. M. Sánchez, D. Childs, K. M. Groom, H. Y. Liu, D. J. Mowbray, and M. Hopkinson, “Structural analysis of life tested 1.3 μm quantum dot lasers,” J. Appl. Phys. 103(1), 014913 (2008).
[Crossref]

Bimberg, D.

D. Ouyang, N. N. Ledentsov, D. Bimberg, A. R. Kovsh, A. E. Zhukov, S. S. Mikhrin, and V. M. Ustinov, “High performance narrow stripe quantum-dot lasers with etched waveguide,” Semicond. Sci. Technol. 18(12), L53–L54 (2003).
[Crossref]

Bobrov, A. I.

D. V. Yurasov, A. I. Bobrov, V. M. Daniltsev, A. V. Novikov, D. A. Pavlov, E. V. Skorokhodov, M. V. Shaleev, and P. A. Yunin, “Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy,” Semiconductors 49(11), 1415–1420 (2015).
[Crossref]

Bowers, J. E.

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources,” Appl. Phys. Lett. 109(1), 011104 (2016).
[Crossref]

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon,” Opt. Lett. 41(7), 1664–1667 (2016).
[Crossref] [PubMed]

A. Y. Liu, C. Zhang, J. Norman, A. Snyder, D. Lubyshev, J. M. Fastenau, A. W. K. Liu, A. C. Gossard, and J. E. Bowers, “High performance continuous wave 1.3 μm quantum dot lasers on silicon,” Appl. Phys. Lett. 104(4), 041104 (2014).
[Crossref]

Chang-Hasnain, C.

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[Crossref]

Chang-Hasnain, C. J.

T. T. D. Tran, R. Chen, K. W. Ng, W. S. Ko, F. Lu, and C. J. Chang-Hasnain, “Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon,” Appl. Phys. Lett. 105(11), 111105 (2014).
[Crossref]

Chen, R.

T. T. D. Tran, R. Chen, K. W. Ng, W. S. Ko, F. Lu, and C. J. Chang-Hasnain, “Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon,” Appl. Phys. Lett. 105(11), 111105 (2014).
[Crossref]

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[Crossref]

Chen, S.

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III–V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

Cheng, C.-Y.

Chien, H.-C.

Childs, D.

R. Beanland, A. M. Sánchez, D. Childs, K. M. Groom, H. Y. Liu, D. J. Mowbray, and M. Hopkinson, “Structural analysis of life tested 1.3 μm quantum dot lasers,” J. Appl. Phys. 103(1), 014913 (2008).
[Crossref]

Chuang, L. C.

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[Crossref]

Claudon, J.

M. Munsch, J. Claudon, N. S. Malik, K. Gilbert, P. Grosse, J.-M. Gerard, F. Albert, F. Langer, T. Schlereth, M. M. Pieczarka, S. Hofling, M. Kamp, A. Forchel, and S. Reitzenstein, “Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes,” Appl. Phys. Lett. 100(3), 031111 (2012).
[Crossref]

Daniltsev, V. M.

D. V. Yurasov, A. I. Bobrov, V. M. Daniltsev, A. V. Novikov, D. A. Pavlov, E. V. Skorokhodov, M. V. Shaleev, and P. A. Yunin, “Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy,” Semiconductors 49(11), 1415–1420 (2015).
[Crossref]

Dubinov, A. A.

V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, A. G. Fefelov, Z. F. Krasilnik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, I. V. Samartsev, E. V. Skorokhodov, M. V. Shaleev, A. A. Sushkov, A. N. Yablonskiy, P. A. Yunin, and D. V. Yurasov, “Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate,” Appl. Phys. Lett. 109(6), 061111 (2016).
[Crossref]

Elliott, S. N.

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III–V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

Fastenau, J. M.

A. Y. Liu, C. Zhang, J. Norman, A. Snyder, D. Lubyshev, J. M. Fastenau, A. W. K. Liu, A. C. Gossard, and J. E. Bowers, “High performance continuous wave 1.3 μm quantum dot lasers on silicon,” Appl. Phys. Lett. 104(4), 041104 (2014).
[Crossref]

Fefelov, A. G.

V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, A. G. Fefelov, Z. F. Krasilnik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, I. V. Samartsev, E. V. Skorokhodov, M. V. Shaleev, A. A. Sushkov, A. N. Yablonskiy, P. A. Yunin, and D. V. Yurasov, “Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate,” Appl. Phys. Lett. 109(6), 061111 (2016).
[Crossref]

Forchel, A.

E. Stock, F. Albert, C. Hopfmann, M. Lermer, C. Schneider, S. Höfling, A. Forchel, M. Kamp, and S. Reitzenstein, “On-chip quantum optics with quantum dot microcavities,” Adv. Mater. 25(5), 707–710 (2013).
[Crossref] [PubMed]

M. Munsch, J. Claudon, N. S. Malik, K. Gilbert, P. Grosse, J.-M. Gerard, F. Albert, F. Langer, T. Schlereth, M. M. Pieczarka, S. Hofling, M. Kamp, A. Forchel, and S. Reitzenstein, “Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes,” Appl. Phys. Lett. 100(3), 031111 (2012).
[Crossref]

Gerard, J.-M.

M. Munsch, J. Claudon, N. S. Malik, K. Gilbert, P. Grosse, J.-M. Gerard, F. Albert, F. Langer, T. Schlereth, M. M. Pieczarka, S. Hofling, M. Kamp, A. Forchel, and S. Reitzenstein, “Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes,” Appl. Phys. Lett. 100(3), 031111 (2012).
[Crossref]

Gilbert, K.

M. Munsch, J. Claudon, N. S. Malik, K. Gilbert, P. Grosse, J.-M. Gerard, F. Albert, F. Langer, T. Schlereth, M. M. Pieczarka, S. Hofling, M. Kamp, A. Forchel, and S. Reitzenstein, “Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes,” Appl. Phys. Lett. 100(3), 031111 (2012).
[Crossref]

Gossard, A. C.

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon,” Opt. Lett. 41(7), 1664–1667 (2016).
[Crossref] [PubMed]

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources,” Appl. Phys. Lett. 109(1), 011104 (2016).
[Crossref]

A. Y. Liu, C. Zhang, J. Norman, A. Snyder, D. Lubyshev, J. M. Fastenau, A. W. K. Liu, A. C. Gossard, and J. E. Bowers, “High performance continuous wave 1.3 μm quantum dot lasers on silicon,” Appl. Phys. Lett. 104(4), 041104 (2014).
[Crossref]

Groom, K. M.

R. Beanland, A. M. Sánchez, D. Childs, K. M. Groom, H. Y. Liu, D. J. Mowbray, and M. Hopkinson, “Structural analysis of life tested 1.3 μm quantum dot lasers,” J. Appl. Phys. 103(1), 014913 (2008).
[Crossref]

Grosse, P.

M. Munsch, J. Claudon, N. S. Malik, K. Gilbert, P. Grosse, J.-M. Gerard, F. Albert, F. Langer, T. Schlereth, M. M. Pieczarka, S. Hofling, M. Kamp, A. Forchel, and S. Reitzenstein, “Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes,” Appl. Phys. Lett. 100(3), 031111 (2012).
[Crossref]

Hofling, S.

M. Munsch, J. Claudon, N. S. Malik, K. Gilbert, P. Grosse, J.-M. Gerard, F. Albert, F. Langer, T. Schlereth, M. M. Pieczarka, S. Hofling, M. Kamp, A. Forchel, and S. Reitzenstein, “Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes,” Appl. Phys. Lett. 100(3), 031111 (2012).
[Crossref]

Höfling, S.

E. Stock, F. Albert, C. Hopfmann, M. Lermer, C. Schneider, S. Höfling, A. Forchel, M. Kamp, and S. Reitzenstein, “On-chip quantum optics with quantum dot microcavities,” Adv. Mater. 25(5), 707–710 (2013).
[Crossref] [PubMed]

Hong, J.-Z.

Hopfmann, C.

E. Stock, F. Albert, C. Hopfmann, M. Lermer, C. Schneider, S. Höfling, A. Forchel, M. Kamp, and S. Reitzenstein, “On-chip quantum optics with quantum dot microcavities,” Adv. Mater. 25(5), 707–710 (2013).
[Crossref] [PubMed]

Hopkinson, M.

R. Beanland, A. M. Sánchez, D. Childs, K. M. Groom, H. Y. Liu, D. J. Mowbray, and M. Hopkinson, “Structural analysis of life tested 1.3 μm quantum dot lasers,” J. Appl. Phys. 103(1), 014913 (2008).
[Crossref]

Hu, E. L.

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources,” Appl. Phys. Lett. 109(1), 011104 (2016).
[Crossref]

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon,” Opt. Lett. 41(7), 1664–1667 (2016).
[Crossref] [PubMed]

Jiang, Q.

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III–V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

A. D. Lee, Q. Jiang, M. Tang, Y. Zhang, A. J. Seeds, and H. Liu, “InAs/GaAs quantum-dot lasers monolithically grown on Si, Ge, and Ge-on-Si substrates,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1901107 (2013).
[Crossref]

A. Lee, Q. Jiang, M. Tang, A. Seeds, and H. Liu, “Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities,” Opt. Express 20(20), 22181–22187 (2012).
[Crossref] [PubMed]

Kamp, M.

E. Stock, F. Albert, C. Hopfmann, M. Lermer, C. Schneider, S. Höfling, A. Forchel, M. Kamp, and S. Reitzenstein, “On-chip quantum optics with quantum dot microcavities,” Adv. Mater. 25(5), 707–710 (2013).
[Crossref] [PubMed]

M. Munsch, J. Claudon, N. S. Malik, K. Gilbert, P. Grosse, J.-M. Gerard, F. Albert, F. Langer, T. Schlereth, M. M. Pieczarka, S. Hofling, M. Kamp, A. Forchel, and S. Reitzenstein, “Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes,” Appl. Phys. Lett. 100(3), 031111 (2012).
[Crossref]

Ko, W. S.

T. T. D. Tran, R. Chen, K. W. Ng, W. S. Ko, F. Lu, and C. J. Chang-Hasnain, “Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon,” Appl. Phys. Lett. 105(11), 111105 (2014).
[Crossref]

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[Crossref]

Kovsh, A. R.

D. Ouyang, N. N. Ledentsov, D. Bimberg, A. R. Kovsh, A. E. Zhukov, S. S. Mikhrin, and V. M. Ustinov, “High performance narrow stripe quantum-dot lasers with etched waveguide,” Semicond. Sci. Technol. 18(12), L53–L54 (2003).
[Crossref]

Krasilnik, Z. F.

V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, A. G. Fefelov, Z. F. Krasilnik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, I. V. Samartsev, E. V. Skorokhodov, M. V. Shaleev, A. A. Sushkov, A. N. Yablonskiy, P. A. Yunin, and D. V. Yurasov, “Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate,” Appl. Phys. Lett. 109(6), 061111 (2016).
[Crossref]

Kryzhanovskaya, N. V.

N. V. Kryzhanovskaya, E. I. Moiseev, Yu. V. Kudashova, F. I. Zubov, A. A. Lipovskii, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, D. A. Livshits, M. V. Maximov, and A. E. Zhukov, “Continuous-wave lasing at 100°C in 1.3 µm quantum dot microdisk diode laser,” Electron. Lett. 51(17), 1354–1355 (2015).
[Crossref]

Kudashova, Yu. V.

N. V. Kryzhanovskaya, E. I. Moiseev, Yu. V. Kudashova, F. I. Zubov, A. A. Lipovskii, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, D. A. Livshits, M. V. Maximov, and A. E. Zhukov, “Continuous-wave lasing at 100°C in 1.3 µm quantum dot microdisk diode laser,” Electron. Lett. 51(17), 1354–1355 (2015).
[Crossref]

Kudryavtsev, K. E.

V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, A. G. Fefelov, Z. F. Krasilnik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, I. V. Samartsev, E. V. Skorokhodov, M. V. Shaleev, A. A. Sushkov, A. N. Yablonskiy, P. A. Yunin, and D. V. Yurasov, “Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate,” Appl. Phys. Lett. 109(6), 061111 (2016).
[Crossref]

Kulagina, M. M.

N. V. Kryzhanovskaya, E. I. Moiseev, Yu. V. Kudashova, F. I. Zubov, A. A. Lipovskii, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, D. A. Livshits, M. V. Maximov, and A. E. Zhukov, “Continuous-wave lasing at 100°C in 1.3 µm quantum dot microdisk diode laser,” Electron. Lett. 51(17), 1354–1355 (2015).
[Crossref]

Langer, F.

M. Munsch, J. Claudon, N. S. Malik, K. Gilbert, P. Grosse, J.-M. Gerard, F. Albert, F. Langer, T. Schlereth, M. M. Pieczarka, S. Hofling, M. Kamp, A. Forchel, and S. Reitzenstein, “Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes,” Appl. Phys. Lett. 100(3), 031111 (2012).
[Crossref]

Lau, K. M.

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon,” Opt. Lett. 41(7), 1664–1667 (2016).
[Crossref] [PubMed]

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources,” Appl. Phys. Lett. 109(1), 011104 (2016).
[Crossref]

Ledentsov, N. N.

D. Ouyang, N. N. Ledentsov, D. Bimberg, A. R. Kovsh, A. E. Zhukov, S. S. Mikhrin, and V. M. Ustinov, “High performance narrow stripe quantum-dot lasers with etched waveguide,” Semicond. Sci. Technol. 18(12), L53–L54 (2003).
[Crossref]

Lee, A.

Lee, A. D.

A. D. Lee, Q. Jiang, M. Tang, Y. Zhang, A. J. Seeds, and H. Liu, “InAs/GaAs quantum-dot lasers monolithically grown on Si, Ge, and Ge-on-Si substrates,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1901107 (2013).
[Crossref]

Lermer, M.

E. Stock, F. Albert, C. Hopfmann, M. Lermer, C. Schneider, S. Höfling, A. Forchel, M. Kamp, and S. Reitzenstein, “On-chip quantum optics with quantum dot microcavities,” Adv. Mater. 25(5), 707–710 (2013).
[Crossref] [PubMed]

Li, Q.

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon,” Opt. Lett. 41(7), 1664–1667 (2016).
[Crossref] [PubMed]

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources,” Appl. Phys. Lett. 109(1), 011104 (2016).
[Crossref]

Li, W.

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III–V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

Lipovskii, A. A.

N. V. Kryzhanovskaya, E. I. Moiseev, Yu. V. Kudashova, F. I. Zubov, A. A. Lipovskii, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, D. A. Livshits, M. V. Maximov, and A. E. Zhukov, “Continuous-wave lasing at 100°C in 1.3 µm quantum dot microdisk diode laser,” Electron. Lett. 51(17), 1354–1355 (2015).
[Crossref]

Liu, A. W. K.

A. Y. Liu, C. Zhang, J. Norman, A. Snyder, D. Lubyshev, J. M. Fastenau, A. W. K. Liu, A. C. Gossard, and J. E. Bowers, “High performance continuous wave 1.3 μm quantum dot lasers on silicon,” Appl. Phys. Lett. 104(4), 041104 (2014).
[Crossref]

Liu, A. Y.

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources,” Appl. Phys. Lett. 109(1), 011104 (2016).
[Crossref]

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon,” Opt. Lett. 41(7), 1664–1667 (2016).
[Crossref] [PubMed]

A. Y. Liu, C. Zhang, J. Norman, A. Snyder, D. Lubyshev, J. M. Fastenau, A. W. K. Liu, A. C. Gossard, and J. E. Bowers, “High performance continuous wave 1.3 μm quantum dot lasers on silicon,” Appl. Phys. Lett. 104(4), 041104 (2014).
[Crossref]

Liu, H.

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III–V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

A. D. Lee, Q. Jiang, M. Tang, Y. Zhang, A. J. Seeds, and H. Liu, “InAs/GaAs quantum-dot lasers monolithically grown on Si, Ge, and Ge-on-Si substrates,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1901107 (2013).
[Crossref]

A. Lee, Q. Jiang, M. Tang, A. Seeds, and H. Liu, “Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities,” Opt. Express 20(20), 22181–22187 (2012).
[Crossref] [PubMed]

T. Wang, H. Liu, A. Lee, F. Pozzi, and A. Seeds, “1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates,” Opt. Express 19(12), 11381–11386 (2011).
[Crossref] [PubMed]

Liu, H. Y.

R. Beanland, A. M. Sánchez, D. Childs, K. M. Groom, H. Y. Liu, D. J. Mowbray, and M. Hopkinson, “Structural analysis of life tested 1.3 μm quantum dot lasers,” J. Appl. Phys. 103(1), 014913 (2008).
[Crossref]

Livshits, D. A.

N. V. Kryzhanovskaya, E. I. Moiseev, Yu. V. Kudashova, F. I. Zubov, A. A. Lipovskii, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, D. A. Livshits, M. V. Maximov, and A. E. Zhukov, “Continuous-wave lasing at 100°C in 1.3 µm quantum dot microdisk diode laser,” Electron. Lett. 51(17), 1354–1355 (2015).
[Crossref]

Lu, F.

T. T. D. Tran, R. Chen, K. W. Ng, W. S. Ko, F. Lu, and C. J. Chang-Hasnain, “Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon,” Appl. Phys. Lett. 105(11), 111105 (2014).
[Crossref]

Lubyshev, D.

A. Y. Liu, C. Zhang, J. Norman, A. Snyder, D. Lubyshev, J. M. Fastenau, A. W. K. Liu, A. C. Gossard, and J. E. Bowers, “High performance continuous wave 1.3 μm quantum dot lasers on silicon,” Appl. Phys. Lett. 104(4), 041104 (2014).
[Crossref]

Malik, N. S.

M. Munsch, J. Claudon, N. S. Malik, K. Gilbert, P. Grosse, J.-M. Gerard, F. Albert, F. Langer, T. Schlereth, M. M. Pieczarka, S. Hofling, M. Kamp, A. Forchel, and S. Reitzenstein, “Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes,” Appl. Phys. Lett. 100(3), 031111 (2012).
[Crossref]

Mao, M.-H.

Maximov, M. V.

N. V. Kryzhanovskaya, E. I. Moiseev, Yu. V. Kudashova, F. I. Zubov, A. A. Lipovskii, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, D. A. Livshits, M. V. Maximov, and A. E. Zhukov, “Continuous-wave lasing at 100°C in 1.3 µm quantum dot microdisk diode laser,” Electron. Lett. 51(17), 1354–1355 (2015).
[Crossref]

Mikhrin, S. S.

D. Ouyang, N. N. Ledentsov, D. Bimberg, A. R. Kovsh, A. E. Zhukov, S. S. Mikhrin, and V. M. Ustinov, “High performance narrow stripe quantum-dot lasers with etched waveguide,” Semicond. Sci. Technol. 18(12), L53–L54 (2003).
[Crossref]

Moiseev, E. I.

N. V. Kryzhanovskaya, E. I. Moiseev, Yu. V. Kudashova, F. I. Zubov, A. A. Lipovskii, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, D. A. Livshits, M. V. Maximov, and A. E. Zhukov, “Continuous-wave lasing at 100°C in 1.3 µm quantum dot microdisk diode laser,” Electron. Lett. 51(17), 1354–1355 (2015).
[Crossref]

Mowbray, D. J.

R. Beanland, A. M. Sánchez, D. Childs, K. M. Groom, H. Y. Liu, D. J. Mowbray, and M. Hopkinson, “Structural analysis of life tested 1.3 μm quantum dot lasers,” J. Appl. Phys. 103(1), 014913 (2008).
[Crossref]

Munsch, M.

M. Munsch, J. Claudon, N. S. Malik, K. Gilbert, P. Grosse, J.-M. Gerard, F. Albert, F. Langer, T. Schlereth, M. M. Pieczarka, S. Hofling, M. Kamp, A. Forchel, and S. Reitzenstein, “Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes,” Appl. Phys. Lett. 100(3), 031111 (2012).
[Crossref]

Nekorkin, S. M.

V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, A. G. Fefelov, Z. F. Krasilnik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, I. V. Samartsev, E. V. Skorokhodov, M. V. Shaleev, A. A. Sushkov, A. N. Yablonskiy, P. A. Yunin, and D. V. Yurasov, “Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate,” Appl. Phys. Lett. 109(6), 061111 (2016).
[Crossref]

Ng, K. W.

T. T. D. Tran, R. Chen, K. W. Ng, W. S. Ko, F. Lu, and C. J. Chang-Hasnain, “Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon,” Appl. Phys. Lett. 105(11), 111105 (2014).
[Crossref]

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[Crossref]

Norman, J.

A. Y. Liu, C. Zhang, J. Norman, A. Snyder, D. Lubyshev, J. M. Fastenau, A. W. K. Liu, A. C. Gossard, and J. E. Bowers, “High performance continuous wave 1.3 μm quantum dot lasers on silicon,” Appl. Phys. Lett. 104(4), 041104 (2014).
[Crossref]

Novikov, A. V.

V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, A. G. Fefelov, Z. F. Krasilnik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, I. V. Samartsev, E. V. Skorokhodov, M. V. Shaleev, A. A. Sushkov, A. N. Yablonskiy, P. A. Yunin, and D. V. Yurasov, “Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate,” Appl. Phys. Lett. 109(6), 061111 (2016).
[Crossref]

D. V. Yurasov, A. I. Bobrov, V. M. Daniltsev, A. V. Novikov, D. A. Pavlov, E. V. Skorokhodov, M. V. Shaleev, and P. A. Yunin, “Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy,” Semiconductors 49(11), 1415–1420 (2015).
[Crossref]

Ouyang, D.

D. Ouyang, N. N. Ledentsov, D. Bimberg, A. R. Kovsh, A. E. Zhukov, S. S. Mikhrin, and V. M. Ustinov, “High performance narrow stripe quantum-dot lasers with etched waveguide,” Semicond. Sci. Technol. 18(12), L53–L54 (2003).
[Crossref]

Pavlov, D. A.

V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, A. G. Fefelov, Z. F. Krasilnik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, I. V. Samartsev, E. V. Skorokhodov, M. V. Shaleev, A. A. Sushkov, A. N. Yablonskiy, P. A. Yunin, and D. V. Yurasov, “Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate,” Appl. Phys. Lett. 109(6), 061111 (2016).
[Crossref]

D. V. Yurasov, A. I. Bobrov, V. M. Daniltsev, A. V. Novikov, D. A. Pavlov, E. V. Skorokhodov, M. V. Shaleev, and P. A. Yunin, “Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy,” Semiconductors 49(11), 1415–1420 (2015).
[Crossref]

Pieczarka, M. M.

M. Munsch, J. Claudon, N. S. Malik, K. Gilbert, P. Grosse, J.-M. Gerard, F. Albert, F. Langer, T. Schlereth, M. M. Pieczarka, S. Hofling, M. Kamp, A. Forchel, and S. Reitzenstein, “Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes,” Appl. Phys. Lett. 100(3), 031111 (2012).
[Crossref]

Pozzi, F.

Reitzenstein, S.

E. Stock, F. Albert, C. Hopfmann, M. Lermer, C. Schneider, S. Höfling, A. Forchel, M. Kamp, and S. Reitzenstein, “On-chip quantum optics with quantum dot microcavities,” Adv. Mater. 25(5), 707–710 (2013).
[Crossref] [PubMed]

M. Munsch, J. Claudon, N. S. Malik, K. Gilbert, P. Grosse, J.-M. Gerard, F. Albert, F. Langer, T. Schlereth, M. M. Pieczarka, S. Hofling, M. Kamp, A. Forchel, and S. Reitzenstein, “Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes,” Appl. Phys. Lett. 100(3), 031111 (2012).
[Crossref]

Ross, I.

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III–V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

Samartsev, I. V.

V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, A. G. Fefelov, Z. F. Krasilnik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, I. V. Samartsev, E. V. Skorokhodov, M. V. Shaleev, A. A. Sushkov, A. N. Yablonskiy, P. A. Yunin, and D. V. Yurasov, “Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate,” Appl. Phys. Lett. 109(6), 061111 (2016).
[Crossref]

Sánchez, A. M.

R. Beanland, A. M. Sánchez, D. Childs, K. M. Groom, H. Y. Liu, D. J. Mowbray, and M. Hopkinson, “Structural analysis of life tested 1.3 μm quantum dot lasers,” J. Appl. Phys. 103(1), 014913 (2008).
[Crossref]

Schlereth, T.

M. Munsch, J. Claudon, N. S. Malik, K. Gilbert, P. Grosse, J.-M. Gerard, F. Albert, F. Langer, T. Schlereth, M. M. Pieczarka, S. Hofling, M. Kamp, A. Forchel, and S. Reitzenstein, “Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes,” Appl. Phys. Lett. 100(3), 031111 (2012).
[Crossref]

Schneider, C.

E. Stock, F. Albert, C. Hopfmann, M. Lermer, C. Schneider, S. Höfling, A. Forchel, M. Kamp, and S. Reitzenstein, “On-chip quantum optics with quantum dot microcavities,” Adv. Mater. 25(5), 707–710 (2013).
[Crossref] [PubMed]

Sedgwick, F. G.

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[Crossref]

Seeds, A.

Seeds, A. J.

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III–V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

A. D. Lee, Q. Jiang, M. Tang, Y. Zhang, A. J. Seeds, and H. Liu, “InAs/GaAs quantum-dot lasers monolithically grown on Si, Ge, and Ge-on-Si substrates,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1901107 (2013).
[Crossref]

Shaleev, M. V.

V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, A. G. Fefelov, Z. F. Krasilnik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, I. V. Samartsev, E. V. Skorokhodov, M. V. Shaleev, A. A. Sushkov, A. N. Yablonskiy, P. A. Yunin, and D. V. Yurasov, “Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate,” Appl. Phys. Lett. 109(6), 061111 (2016).
[Crossref]

D. V. Yurasov, A. I. Bobrov, V. M. Daniltsev, A. V. Novikov, D. A. Pavlov, E. V. Skorokhodov, M. V. Shaleev, and P. A. Yunin, “Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy,” Semiconductors 49(11), 1415–1420 (2015).
[Crossref]

Shutts, S.

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III–V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

Skorokhodov, E. V.

V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, A. G. Fefelov, Z. F. Krasilnik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, I. V. Samartsev, E. V. Skorokhodov, M. V. Shaleev, A. A. Sushkov, A. N. Yablonskiy, P. A. Yunin, and D. V. Yurasov, “Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate,” Appl. Phys. Lett. 109(6), 061111 (2016).
[Crossref]

D. V. Yurasov, A. I. Bobrov, V. M. Daniltsev, A. V. Novikov, D. A. Pavlov, E. V. Skorokhodov, M. V. Shaleev, and P. A. Yunin, “Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy,” Semiconductors 49(11), 1415–1420 (2015).
[Crossref]

Smowton, P. M.

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III–V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

Snyder, A.

A. Y. Liu, C. Zhang, J. Norman, A. Snyder, D. Lubyshev, J. M. Fastenau, A. W. K. Liu, A. C. Gossard, and J. E. Bowers, “High performance continuous wave 1.3 μm quantum dot lasers on silicon,” Appl. Phys. Lett. 104(4), 041104 (2014).
[Crossref]

Sobiesierski, A.

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III–V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

Stock, E.

E. Stock, F. Albert, C. Hopfmann, M. Lermer, C. Schneider, S. Höfling, A. Forchel, M. Kamp, and S. Reitzenstein, “On-chip quantum optics with quantum dot microcavities,” Adv. Mater. 25(5), 707–710 (2013).
[Crossref] [PubMed]

Sushkov, A. A.

V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, A. G. Fefelov, Z. F. Krasilnik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, I. V. Samartsev, E. V. Skorokhodov, M. V. Shaleev, A. A. Sushkov, A. N. Yablonskiy, P. A. Yunin, and D. V. Yurasov, “Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate,” Appl. Phys. Lett. 109(6), 061111 (2016).
[Crossref]

Tang, M.

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III–V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

A. D. Lee, Q. Jiang, M. Tang, Y. Zhang, A. J. Seeds, and H. Liu, “InAs/GaAs quantum-dot lasers monolithically grown on Si, Ge, and Ge-on-Si substrates,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1901107 (2013).
[Crossref]

A. Lee, Q. Jiang, M. Tang, A. Seeds, and H. Liu, “Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities,” Opt. Express 20(20), 22181–22187 (2012).
[Crossref] [PubMed]

Tran, T. T. D.

T. T. D. Tran, R. Chen, K. W. Ng, W. S. Ko, F. Lu, and C. J. Chang-Hasnain, “Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon,” Appl. Phys. Lett. 105(11), 111105 (2014).
[Crossref]

Tran, T.-T. D.

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[Crossref]

Troshkov, S. I.

N. V. Kryzhanovskaya, E. I. Moiseev, Yu. V. Kudashova, F. I. Zubov, A. A. Lipovskii, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, D. A. Livshits, M. V. Maximov, and A. E. Zhukov, “Continuous-wave lasing at 100°C in 1.3 µm quantum dot microdisk diode laser,” Electron. Lett. 51(17), 1354–1355 (2015).
[Crossref]

Ustinov, V. M.

D. Ouyang, N. N. Ledentsov, D. Bimberg, A. R. Kovsh, A. E. Zhukov, S. S. Mikhrin, and V. M. Ustinov, “High performance narrow stripe quantum-dot lasers with etched waveguide,” Semicond. Sci. Technol. 18(12), L53–L54 (2003).
[Crossref]

Wan, Y.

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources,” Appl. Phys. Lett. 109(1), 011104 (2016).
[Crossref]

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon,” Opt. Lett. 41(7), 1664–1667 (2016).
[Crossref] [PubMed]

Wang, T.

Wu, J.

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III–V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

Yablonskiy, A. N.

V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, A. G. Fefelov, Z. F. Krasilnik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, I. V. Samartsev, E. V. Skorokhodov, M. V. Shaleev, A. A. Sushkov, A. N. Yablonskiy, P. A. Yunin, and D. V. Yurasov, “Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate,” Appl. Phys. Lett. 109(6), 061111 (2016).
[Crossref]

Yunin, P. A.

V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, A. G. Fefelov, Z. F. Krasilnik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, I. V. Samartsev, E. V. Skorokhodov, M. V. Shaleev, A. A. Sushkov, A. N. Yablonskiy, P. A. Yunin, and D. V. Yurasov, “Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate,” Appl. Phys. Lett. 109(6), 061111 (2016).
[Crossref]

D. V. Yurasov, A. I. Bobrov, V. M. Daniltsev, A. V. Novikov, D. A. Pavlov, E. V. Skorokhodov, M. V. Shaleev, and P. A. Yunin, “Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy,” Semiconductors 49(11), 1415–1420 (2015).
[Crossref]

Yurasov, D. V.

V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, A. G. Fefelov, Z. F. Krasilnik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, I. V. Samartsev, E. V. Skorokhodov, M. V. Shaleev, A. A. Sushkov, A. N. Yablonskiy, P. A. Yunin, and D. V. Yurasov, “Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate,” Appl. Phys. Lett. 109(6), 061111 (2016).
[Crossref]

D. V. Yurasov, A. I. Bobrov, V. M. Daniltsev, A. V. Novikov, D. A. Pavlov, E. V. Skorokhodov, M. V. Shaleev, and P. A. Yunin, “Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy,” Semiconductors 49(11), 1415–1420 (2015).
[Crossref]

Zadiranov, Yu. M.

N. V. Kryzhanovskaya, E. I. Moiseev, Yu. V. Kudashova, F. I. Zubov, A. A. Lipovskii, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, D. A. Livshits, M. V. Maximov, and A. E. Zhukov, “Continuous-wave lasing at 100°C in 1.3 µm quantum dot microdisk diode laser,” Electron. Lett. 51(17), 1354–1355 (2015).
[Crossref]

Zhang, C.

A. Y. Liu, C. Zhang, J. Norman, A. Snyder, D. Lubyshev, J. M. Fastenau, A. W. K. Liu, A. C. Gossard, and J. E. Bowers, “High performance continuous wave 1.3 μm quantum dot lasers on silicon,” Appl. Phys. Lett. 104(4), 041104 (2014).
[Crossref]

Zhang, Y.

A. D. Lee, Q. Jiang, M. Tang, Y. Zhang, A. J. Seeds, and H. Liu, “InAs/GaAs quantum-dot lasers monolithically grown on Si, Ge, and Ge-on-Si substrates,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1901107 (2013).
[Crossref]

Zhukov, A. E.

N. V. Kryzhanovskaya, E. I. Moiseev, Yu. V. Kudashova, F. I. Zubov, A. A. Lipovskii, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, D. A. Livshits, M. V. Maximov, and A. E. Zhukov, “Continuous-wave lasing at 100°C in 1.3 µm quantum dot microdisk diode laser,” Electron. Lett. 51(17), 1354–1355 (2015).
[Crossref]

D. Ouyang, N. N. Ledentsov, D. Bimberg, A. R. Kovsh, A. E. Zhukov, S. S. Mikhrin, and V. M. Ustinov, “High performance narrow stripe quantum-dot lasers with etched waveguide,” Semicond. Sci. Technol. 18(12), L53–L54 (2003).
[Crossref]

Zubov, F. I.

N. V. Kryzhanovskaya, E. I. Moiseev, Yu. V. Kudashova, F. I. Zubov, A. A. Lipovskii, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, D. A. Livshits, M. V. Maximov, and A. E. Zhukov, “Continuous-wave lasing at 100°C in 1.3 µm quantum dot microdisk diode laser,” Electron. Lett. 51(17), 1354–1355 (2015).
[Crossref]

Adv. Mater. (1)

E. Stock, F. Albert, C. Hopfmann, M. Lermer, C. Schneider, S. Höfling, A. Forchel, M. Kamp, and S. Reitzenstein, “On-chip quantum optics with quantum dot microcavities,” Adv. Mater. 25(5), 707–710 (2013).
[Crossref] [PubMed]

Appl. Phys. Lett. (5)

M. Munsch, J. Claudon, N. S. Malik, K. Gilbert, P. Grosse, J.-M. Gerard, F. Albert, F. Langer, T. Schlereth, M. M. Pieczarka, S. Hofling, M. Kamp, A. Forchel, and S. Reitzenstein, “Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes,” Appl. Phys. Lett. 100(3), 031111 (2012).
[Crossref]

A. Y. Liu, C. Zhang, J. Norman, A. Snyder, D. Lubyshev, J. M. Fastenau, A. W. K. Liu, A. C. Gossard, and J. E. Bowers, “High performance continuous wave 1.3 μm quantum dot lasers on silicon,” Appl. Phys. Lett. 104(4), 041104 (2014).
[Crossref]

T. T. D. Tran, R. Chen, K. W. Ng, W. S. Ko, F. Lu, and C. J. Chang-Hasnain, “Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon,” Appl. Phys. Lett. 105(11), 111105 (2014).
[Crossref]

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources,” Appl. Phys. Lett. 109(1), 011104 (2016).
[Crossref]

V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, A. G. Fefelov, Z. F. Krasilnik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, I. V. Samartsev, E. V. Skorokhodov, M. V. Shaleev, A. A. Sushkov, A. N. Yablonskiy, P. A. Yunin, and D. V. Yurasov, “Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate,” Appl. Phys. Lett. 109(6), 061111 (2016).
[Crossref]

Electron. Lett. (1)

N. V. Kryzhanovskaya, E. I. Moiseev, Yu. V. Kudashova, F. I. Zubov, A. A. Lipovskii, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, D. A. Livshits, M. V. Maximov, and A. E. Zhukov, “Continuous-wave lasing at 100°C in 1.3 µm quantum dot microdisk diode laser,” Electron. Lett. 51(17), 1354–1355 (2015).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

A. D. Lee, Q. Jiang, M. Tang, Y. Zhang, A. J. Seeds, and H. Liu, “InAs/GaAs quantum-dot lasers monolithically grown on Si, Ge, and Ge-on-Si substrates,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1901107 (2013).
[Crossref]

J. Appl. Phys. (1)

R. Beanland, A. M. Sánchez, D. Childs, K. M. Groom, H. Y. Liu, D. J. Mowbray, and M. Hopkinson, “Structural analysis of life tested 1.3 μm quantum dot lasers,” J. Appl. Phys. 103(1), 014913 (2008).
[Crossref]

Nat. Photonics (2)

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III–V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[Crossref]

Opt. Express (3)

Opt. Lett. (1)

Semicond. Sci. Technol. (1)

D. Ouyang, N. N. Ledentsov, D. Bimberg, A. R. Kovsh, A. E. Zhukov, S. S. Mikhrin, and V. M. Ustinov, “High performance narrow stripe quantum-dot lasers with etched waveguide,” Semicond. Sci. Technol. 18(12), L53–L54 (2003).
[Crossref]

Semiconductors (1)

D. V. Yurasov, A. I. Bobrov, V. M. Daniltsev, A. V. Novikov, D. A. Pavlov, E. V. Skorokhodov, M. V. Shaleev, and P. A. Yunin, “Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy,” Semiconductors 49(11), 1415–1420 (2015).
[Crossref]

Other (2)

Y. Wan, J. Norman, Q. Li, M. J. Kennedy, D. Liang, C. Zhang, D. Huang, A. Y. Liu, A. Torres, D. Jung, A. C. Gossard, E. L. Hu, K. M. Lau, J. E. Bowers, Sub-mA threshold 1.3 μm CW lasing from electrically pumped micro-rings grown on (001) Si, CLEO: Applications and Technology 2017 (San Jose, CA, USA, 14–19 May 2017), paper JTh5C.3.

C. Cornet, Y. Léger, and C. Robert, Integrated Lasers on Silicon, ISTE Press - Elsevier 2016.

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Figures (5)

Fig. 1
Fig. 1 Cross-section SEM (a) and TEM (b,c) images of the epitaxial structure.
Fig. 2
Fig. 2 SEM image of a microdisk array. Outer diameter D within a raw is indicated.
Fig. 3
Fig. 3 I-V characteristic (solid lines) and its linear fit (dashed line) for two microdisk lasers of different diameters.
Fig. 4
Fig. 4 Series of EL spectra taken at different currents for D = 31 µm microdisk laser. Spectra are vertically shifted by 10 dB for clarity. Inset: close-up spectrum near the threshold (312 mA).
Fig. 5
Fig. 5 Integrated EL intensity of dominant mode against injection current. Inset: threshold current as a function of the microdisk diameter (dashed line: the smallest threshold current density).

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