Abstract

We investigated the gain-switching properties of GaN-based ridge-waveguide lasers on free-standing GaN substrates with low-cost nanosecond current injection. It was observed that the output pulses with intense injection consisted of an isolated short pulse with a duration of around 50 ps at the high-energy side and a long steady-state component at the lower energy side independent of the electric pulse duration. The energy separation between the short pulse and steady-state component can be over 30 meV, favoring short-pulse generation with the spectral filtering technique. The duration of the steady-state component can be tuned freely by controlling the duration and voltage of the electric pulse, which is very useful for generating pulse-width-tunable optical pulses for various applications.

© 2017 Optical Society of America

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    [Crossref] [PubMed]
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2017 (2)

2016 (4)

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, “High-modulation-efficiency integrated waveguide modulator-laser diode at 448 nm,” ACS Photonics 3(2), 262–268 (2016).
[Crossref]

Y. Sun, K. Zhou, Q. Sun, J. P. Liu, M. X. Feng, Z. C. Li, Y. Zhou, L. Q. Zhang, D. Y. Li, S. M. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10(9), 595–599 (2016).
[Crossref]

R. Tao, K. Kamide, M. Arita, S. Kako, and Y. Arakawa, “Room-temperature observation of trapped exciton-polariton emission in GaN/AlGaN Microcavities with air-gap/III-nitride distributed Bragg reflectors,” ACS Photonics 3(7), 1182–1187 (2016).
[Crossref]

M. Liu, B. M. Zhang, P. P. Shum, and X. P. Cheng, “Pulsed pumping for pulsewidth tunable nanosecond ytterbium-doped fiber laser,” IEEE Photonics Technol. Lett. 28(24), 2842–2845 (2016).
[Crossref]

2015 (4)

Y. X. Yang, Y. Zheng, W. R. Cao, A. Titov, J. Hyvonen, J. R. Manders, J. G. Xue, P. H. Holloway, and L. Qian, “High-efficiecy light-emitting devices based on quantum dots with tailored nanostructures,” Nat. Photonics 9, 259 (2015).

Y. C. Chi, D. H. Hsieh, C. T. Tsai, H. Y. Chen, H. C. Kuo, and G. R. Lin, “450-nm GaN laser diode enables high-speed visible light communication with 9-Gbps QAM-OFDM,” Opt. Express 23(10), 13051–13059 (2015).
[Crossref] [PubMed]

T. W. Reenaas, Y. S. Lee, F. R. Chowdhury, M. G. Gupta, Y. Y. Tsui, T. Y. Tou, S. L. Yap, S. Y. Kok, and S. S. Yap, “Femtosecond and nanosecond pulsed laser deposition of silicon and germanium,” Appl. Surf. Sci. 354, 206–211 (2015).
[Crossref]

K. Wada, S. Matsukura, A. Tanaka, T. Matsuyama, and H. Horinaka, “Precise measurement of single-mode fiber lengths using a gain-switched distributed feedback laser with delayed optical feedback,” Opt. Express 23(18), 23013–23020 (2015).
[Crossref] [PubMed]

2014 (5)

S. C. Chen, D. H. Hsieh, H. Jiang, Y. K. Liao, F. I. Lai, C. H. Chen, C. W. Luo, J. Y. Juang, Y. L. Chueh, K. H. Wu, and H. C. Kuo, “Growth and characterization of Cu(In,Ga)Se2 thin films by nanosecond and femtosecond pulsed laser deposition,” Nanoscale Res. Lett. 9(1), 280 (2014).
[Crossref] [PubMed]

S. Chen, A. Asahara, T. Ito, J. Zhang, B. Zhang, T. Suemoto, M. Yoshita, and H. Akiyama, “Gain-switching dynamics in optically pumped single-mode InGaN vertical-cavity surface-emitting lasers,” Opt. Express 22(4), 4196–4201 (2014).
[Crossref] [PubMed]

S. Chen, T. Ito, A. Asahara, M. Yoshita, W. Liu, J. Zhang, B. Zhang, T. Suemoto, and H. Akiyama, “Spectral dynamics of picosecond gain-switched pulses from nitride-based vertical-cavity surface-emitting lasers,” Sci. Rep. 4(1), 4325 (2014).
[Crossref] [PubMed]

D. Iida, S. Kawai, N. Ema, T. Tsuchiya, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its appplication to light-emitting diodes,” Appl. Phys. Lett. 105(7), 072101 (2014).
[Crossref]

B. O. Jung, S. Y. Bae, Y. Kato, M. Imura, D. S. Lee, Y. Honda, and H. Amano, “Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique,” CrystEngComm 16(11), 2273 (2014).
[Crossref]

2013 (1)

2012 (2)

2011 (1)

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar () InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2,” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

2010 (2)

A. Sikora, F. Garrelie, C. Donnet, A. S. Loir, J. Fontaine, J. C. Sanchez-Lopez, and T. C. Rojas, “Structure of diamondlike carbon films deposited by femtosecond and nanosecond pulsed laser ablation,” J. Appl. Phys. 108(11), 113516 (2010).
[Crossref]

S. T. Hendow and S. A. Shakir, “Structuring materials with nanosecond laser pulses,” Opt. Express 18(10), 10188–10199 (2010).
[Crossref] [PubMed]

2009 (2)

T. Kamikawa, Y. Kawaguchi, P. O. Vaccaro, S. Ito, and H. Kawanishi, “Highly reliable 500 mW laser diodes with epitaxially grown AlON coating for high-density optical storage,” Appl. Phys. Lett. 95(3), 031106 (2009).
[Crossref]

Q. Sun, Y. Suk Cho, B. H. Kong, H. Koun Cho, T. Shine Ko, C. D. Yerino, I.-H. Lee, and J. Han, “N-face GaN growth on c-plane sapphire by metalorganic chemical vapor depositon,” J. Cryst. Growth 311(10), 2948–2952 (2009).
[Crossref]

2008 (2)

K. Bao, X. N. Kang, B. Zhang, T. Dai, Y. J. Sun, Q. Fu, G. J. Lian, G. C. Xiong, G. Y. Zhang, and Y. Chen, “Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off,” Appl. Phys. Lett. 92(14), 141104 (2008).
[Crossref]

S. Kono, T. Oki, T. Miyajima, M. Ikeda, and H. Yokoyama, “12 W peak-power 10 ps duration optical pulse generation by gain switching of a single-transverse-mode GaInN blue laser diode,” Appl. Phys. Lett. 93(13), 131113 (2008).
[Crossref]

2006 (1)

S. D. Hersee, X. Sun, and X. Wang, “The controlled growth of GaN nanowires,” Nano Lett. 6(8), 1808–1811 (2006).
[Crossref] [PubMed]

2005 (1)

C. Y. Chien and M. C. Gupta, “Pulse width effect in ultrafast laser processing of materials,” Appl. Phys. (Berl.) 81(6), 1257–1263 (2005).
[Crossref]

2002 (1)

T. Egawa, T. Moku, H. Ishikawa, K. Ohtsuka, and T. Jimbo, “Improved characteristics of blue and green InGaN-based light-emitting diodes on Si grown by metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 41(Part 2, No. 6B), L663–L664 (2002).
[Crossref]

2001 (2)

B. Beaumont, P. Vennéguès, and P. Gibart, “Epitaxial lateral overgrowth of GaN,” Phys. Status Solidi 227, 1–43 (2001).
[Crossref]

G. K. L. Ng and L. Li, “The effect of laser peak power and pulse width on the hole geometry repeatability in laser percussion drilling,” Opt. Laser Technol. 33(6), 393–402 (2001).
[Crossref]

2000 (2)

P. Vasil’ev, I. H. White, and J. Gowar, “Fast phenomena in semiconductor lasers,” Rep. Prog. Phys. 63(12), 1997–2042 (2000).
[Crossref]

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

1999 (1)

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
[Crossref]

1993 (1)

M. E. Lin, G. Xue, G. L. Zhou, J. E. Greene, and H. Morkoc, “p-type zine-blende GaN on GaAs substrates,” Appl. Phys. Lett. 63(7), 932–933 (1993).
[Crossref]

1992 (1)

S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, “Hole compensation mechanism of P-type GaN films,” Jpn. J. Appl. Phys. 31(Part 1, No. 5A), 1258–1266 (1992).
[Crossref]

1989 (1)

H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, “P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI),” Jpn. J. Appl. Phys. 28(2), L2112–L2114 (1989).
[Crossref]

1988 (1)

K. Y. Lau, “Gain switching of semiconductor injection lasers,” Appl. Phys. Lett. 52(4), 257–259 (1988).
[Crossref]

1986 (1)

D. Bimberg, K. Ketterer, E. H. Bottcher, and E. Scoll, “Gain modulation of unbiased semiconductor lasers: ultrashort light-pulse generation in the 0.8 μm-1.3 μm wavelength range,” Int. J. Electron. 60(23), 23–45 (1986).
[Crossref]

Akasaki, I.

D. Iida, S. Kawai, N. Ema, T. Tsuchiya, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its appplication to light-emitting diodes,” Appl. Phys. Lett. 105(7), 072101 (2014).
[Crossref]

H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, “P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI),” Jpn. J. Appl. Phys. 28(2), L2112–L2114 (1989).
[Crossref]

Akiyama, H.

Alias, M. S.

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, “High-modulation-efficiency integrated waveguide modulator-laser diode at 448 nm,” ACS Photonics 3(2), 262–268 (2016).
[Crossref]

Alyamani, A. Y.

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, “High-modulation-efficiency integrated waveguide modulator-laser diode at 448 nm,” ACS Photonics 3(2), 262–268 (2016).
[Crossref]

Amano, H.

B. O. Jung, S. Y. Bae, Y. Kato, M. Imura, D. S. Lee, Y. Honda, and H. Amano, “Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique,” CrystEngComm 16(11), 2273 (2014).
[Crossref]

H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, “P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI),” Jpn. J. Appl. Phys. 28(2), L2112–L2114 (1989).
[Crossref]

Arakawa, Y.

R. Tao, K. Kamide, M. Arita, S. Kako, and Y. Arakawa, “Room-temperature observation of trapped exciton-polariton emission in GaN/AlGaN Microcavities with air-gap/III-nitride distributed Bragg reflectors,” ACS Photonics 3(7), 1182–1187 (2016).
[Crossref]

Arita, M.

R. Tao, K. Kamide, M. Arita, S. Kako, and Y. Arakawa, “Room-temperature observation of trapped exciton-polariton emission in GaN/AlGaN Microcavities with air-gap/III-nitride distributed Bragg reflectors,” ACS Photonics 3(7), 1182–1187 (2016).
[Crossref]

Asahara, A.

S. Chen, T. Ito, A. Asahara, M. Yoshita, W. Liu, J. Zhang, B. Zhang, T. Suemoto, and H. Akiyama, “Spectral dynamics of picosecond gain-switched pulses from nitride-based vertical-cavity surface-emitting lasers,” Sci. Rep. 4(1), 4325 (2014).
[Crossref] [PubMed]

S. Chen, A. Asahara, T. Ito, J. Zhang, B. Zhang, T. Suemoto, M. Yoshita, and H. Akiyama, “Gain-switching dynamics in optically pumped single-mode InGaN vertical-cavity surface-emitting lasers,” Opt. Express 22(4), 4196–4201 (2014).
[Crossref] [PubMed]

Bae, S. Y.

B. O. Jung, S. Y. Bae, Y. Kato, M. Imura, D. S. Lee, Y. Honda, and H. Amano, “Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique,” CrystEngComm 16(11), 2273 (2014).
[Crossref]

Bao, K.

K. Bao, X. N. Kang, B. Zhang, T. Dai, Y. J. Sun, Q. Fu, G. J. Lian, G. C. Xiong, G. Y. Zhang, and Y. Chen, “Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off,” Appl. Phys. Lett. 92(14), 141104 (2008).
[Crossref]

Beaumont, B.

B. Beaumont, P. Vennéguès, and P. Gibart, “Epitaxial lateral overgrowth of GaN,” Phys. Status Solidi 227, 1–43 (2001).
[Crossref]

Bimberg, D.

D. Bimberg, K. Ketterer, E. H. Bottcher, and E. Scoll, “Gain modulation of unbiased semiconductor lasers: ultrashort light-pulse generation in the 0.8 μm-1.3 μm wavelength range,” Int. J. Electron. 60(23), 23–45 (1986).
[Crossref]

Bottcher, E. H.

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Li, D.

Li, D. Y.

Y. Sun, K. Zhou, Q. Sun, J. P. Liu, M. X. Feng, Z. C. Li, Y. Zhou, L. Q. Zhang, D. Y. Li, S. M. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10(9), 595–599 (2016).
[Crossref]

Li, L.

G. K. L. Ng and L. Li, “The effect of laser peak power and pulse width on the hole geometry repeatability in laser percussion drilling,” Opt. Laser Technol. 33(6), 393–402 (2001).
[Crossref]

Li, Z.

Li, Z. C.

Y. Sun, K. Zhou, Q. Sun, J. P. Liu, M. X. Feng, Z. C. Li, Y. Zhou, L. Q. Zhang, D. Y. Li, S. M. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10(9), 595–599 (2016).
[Crossref]

Lian, G. J.

K. Bao, X. N. Kang, B. Zhang, T. Dai, Y. J. Sun, Q. Fu, G. J. Lian, G. C. Xiong, G. Y. Zhang, and Y. Chen, “Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off,” Appl. Phys. Lett. 92(14), 141104 (2008).
[Crossref]

Liao, Y. K.

S. C. Chen, D. H. Hsieh, H. Jiang, Y. K. Liao, F. I. Lai, C. H. Chen, C. W. Luo, J. Y. Juang, Y. L. Chueh, K. H. Wu, and H. C. Kuo, “Growth and characterization of Cu(In,Ga)Se2 thin films by nanosecond and femtosecond pulsed laser deposition,” Nanoscale Res. Lett. 9(1), 280 (2014).
[Crossref] [PubMed]

Lin, G. R.

Lin, M. E.

M. E. Lin, G. Xue, G. L. Zhou, J. E. Greene, and H. Morkoc, “p-type zine-blende GaN on GaAs substrates,” Appl. Phys. Lett. 63(7), 932–933 (1993).
[Crossref]

Liu, J.

Liu, J. P.

Y. Sun, K. Zhou, Q. Sun, J. P. Liu, M. X. Feng, Z. C. Li, Y. Zhou, L. Q. Zhang, D. Y. Li, S. M. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10(9), 595–599 (2016).
[Crossref]

Liu, M.

M. Liu, B. M. Zhang, P. P. Shum, and X. P. Cheng, “Pulsed pumping for pulsewidth tunable nanosecond ytterbium-doped fiber laser,” IEEE Photonics Technol. Lett. 28(24), 2842–2845 (2016).
[Crossref]

Liu, S.

Y. Sun, K. Zhou, Q. Sun, J. P. Liu, M. X. Feng, Z. C. Li, Y. Zhou, L. Q. Zhang, D. Y. Li, S. M. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10(9), 595–599 (2016).
[Crossref]

Liu, W.

S. Chen, T. Ito, A. Asahara, M. Yoshita, W. Liu, J. Zhang, B. Zhang, T. Suemoto, and H. Akiyama, “Spectral dynamics of picosecond gain-switched pulses from nitride-based vertical-cavity surface-emitting lasers,” Sci. Rep. 4(1), 4325 (2014).
[Crossref] [PubMed]

Loir, A. S.

A. Sikora, F. Garrelie, C. Donnet, A. S. Loir, J. Fontaine, J. C. Sanchez-Lopez, and T. C. Rojas, “Structure of diamondlike carbon films deposited by femtosecond and nanosecond pulsed laser ablation,” J. Appl. Phys. 108(11), 113516 (2010).
[Crossref]

Luo, C. W.

S. C. Chen, D. H. Hsieh, H. Jiang, Y. K. Liao, F. I. Lai, C. H. Chen, C. W. Luo, J. Y. Juang, Y. L. Chueh, K. H. Wu, and H. C. Kuo, “Growth and characterization of Cu(In,Ga)Se2 thin films by nanosecond and femtosecond pulsed laser deposition,” Nanoscale Res. Lett. 9(1), 280 (2014).
[Crossref] [PubMed]

Manders, J. R.

Y. X. Yang, Y. Zheng, W. R. Cao, A. Titov, J. Hyvonen, J. R. Manders, J. G. Xue, P. H. Holloway, and L. Qian, “High-efficiecy light-emitting devices based on quantum dots with tailored nanostructures,” Nat. Photonics 9, 259 (2015).

Matsukura, S.

Matsuyama, T.

Mei, P.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
[Crossref]

Menniger, J.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Miyajima, T.

S. Kono, T. Oki, T. Miyajima, M. Ikeda, and H. Yokoyama, “12 W peak-power 10 ps duration optical pulse generation by gain switching of a single-transverse-mode GaInN blue laser diode,” Appl. Phys. Lett. 93(13), 131113 (2008).
[Crossref]

Moku, T.

T. Egawa, T. Moku, H. Ishikawa, K. Ohtsuka, and T. Jimbo, “Improved characteristics of blue and green InGaN-based light-emitting diodes on Si grown by metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 41(Part 2, No. 6B), L663–L664 (2002).
[Crossref]

Morkoc, H.

M. E. Lin, G. Xue, G. L. Zhou, J. E. Greene, and H. Morkoc, “p-type zine-blende GaN on GaAs substrates,” Appl. Phys. Lett. 63(7), 932–933 (1993).
[Crossref]

Mukai, T.

S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, “Hole compensation mechanism of P-type GaN films,” Jpn. J. Appl. Phys. 31(Part 1, No. 5A), 1258–1266 (1992).
[Crossref]

Nakamura, S.

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, “High-modulation-efficiency integrated waveguide modulator-laser diode at 448 nm,” ACS Photonics 3(2), 262–268 (2016).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar () InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2,” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, “Hole compensation mechanism of P-type GaN films,” Jpn. J. Appl. Phys. 31(Part 1, No. 5A), 1258–1266 (1992).
[Crossref]

Ng, G. K. L.

G. K. L. Ng and L. Li, “The effect of laser peak power and pulse width on the hole geometry repeatability in laser percussion drilling,” Opt. Laser Technol. 33(6), 393–402 (2001).
[Crossref]

Ng, T. K.

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, “High-modulation-efficiency integrated waveguide modulator-laser diode at 448 nm,” ACS Photonics 3(2), 262–268 (2016).
[Crossref]

Ohtsuka, K.

T. Egawa, T. Moku, H. Ishikawa, K. Ohtsuka, and T. Jimbo, “Improved characteristics of blue and green InGaN-based light-emitting diodes on Si grown by metalorganic chemical vapor deposition,” Jpn. J. Appl. Phys. 41(Part 2, No. 6B), L663–L664 (2002).
[Crossref]

Oki, T.

S. Kono, T. Oki, T. Miyajima, M. Ikeda, and H. Yokoyama, “12 W peak-power 10 ps duration optical pulse generation by gain switching of a single-transverse-mode GaInN blue laser diode,” Appl. Phys. Lett. 93(13), 131113 (2008).
[Crossref]

Ooi, B. S.

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, “High-modulation-efficiency integrated waveguide modulator-laser diode at 448 nm,” ACS Photonics 3(2), 262–268 (2016).
[Crossref]

Oubei, H. M.

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, “High-modulation-efficiency integrated waveguide modulator-laser diode at 448 nm,” ACS Photonics 3(2), 262–268 (2016).
[Crossref]

Pan, C. C.

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar () InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2,” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

Ploog, K. H.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Pourhashemi, A.

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, “High-modulation-efficiency integrated waveguide modulator-laser diode at 448 nm,” ACS Photonics 3(2), 262–268 (2016).
[Crossref]

Qian, L.

Y. X. Yang, Y. Zheng, W. R. Cao, A. Titov, J. Hyvonen, J. R. Manders, J. G. Xue, P. H. Holloway, and L. Qian, “High-efficiecy light-emitting devices based on quantum dots with tailored nanostructures,” Nat. Photonics 9, 259 (2015).

Ramsteiner, M.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Reenaas, T. W.

T. W. Reenaas, Y. S. Lee, F. R. Chowdhury, M. G. Gupta, Y. Y. Tsui, T. Y. Tou, S. L. Yap, S. Y. Kok, and S. S. Yap, “Femtosecond and nanosecond pulsed laser deposition of silicon and germanium,” Appl. Surf. Sci. 354, 206–211 (2015).
[Crossref]

Reiche, M.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Rojas, T. C.

A. Sikora, F. Garrelie, C. Donnet, A. S. Loir, J. Fontaine, J. C. Sanchez-Lopez, and T. C. Rojas, “Structure of diamondlike carbon films deposited by femtosecond and nanosecond pulsed laser ablation,” J. Appl. Phys. 108(11), 113516 (2010).
[Crossref]

Romano, L. T.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
[Crossref]

Sanchez-Lopez, J. C.

A. Sikora, F. Garrelie, C. Donnet, A. S. Loir, J. Fontaine, J. C. Sanchez-Lopez, and T. C. Rojas, “Structure of diamondlike carbon films deposited by femtosecond and nanosecond pulsed laser ablation,” J. Appl. Phys. 108(11), 113516 (2010).
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Sands, T.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
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Sato, A.

Scoll, E.

D. Bimberg, K. Ketterer, E. H. Bottcher, and E. Scoll, “Gain modulation of unbiased semiconductor lasers: ultrashort light-pulse generation in the 0.8 μm-1.3 μm wavelength range,” Int. J. Electron. 60(23), 23–45 (1986).
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Senoh, M.

S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, “Hole compensation mechanism of P-type GaN films,” Jpn. J. Appl. Phys. 31(Part 1, No. 5A), 1258–1266 (1992).
[Crossref]

Shakir, S. A.

Shen, C.

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, “High-modulation-efficiency integrated waveguide modulator-laser diode at 448 nm,” ACS Photonics 3(2), 262–268 (2016).
[Crossref]

Shine Ko, T.

Q. Sun, Y. Suk Cho, B. H. Kong, H. Koun Cho, T. Shine Ko, C. D. Yerino, I.-H. Lee, and J. Han, “N-face GaN growth on c-plane sapphire by metalorganic chemical vapor depositon,” J. Cryst. Growth 311(10), 2948–2952 (2009).
[Crossref]

Shum, P. P.

M. Liu, B. M. Zhang, P. P. Shum, and X. P. Cheng, “Pulsed pumping for pulsewidth tunable nanosecond ytterbium-doped fiber laser,” IEEE Photonics Technol. Lett. 28(24), 2842–2845 (2016).
[Crossref]

Sikora, A.

A. Sikora, F. Garrelie, C. Donnet, A. S. Loir, J. Fontaine, J. C. Sanchez-Lopez, and T. C. Rojas, “Structure of diamondlike carbon films deposited by femtosecond and nanosecond pulsed laser ablation,” J. Appl. Phys. 108(11), 113516 (2010).
[Crossref]

Speck, J. S.

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, “High-modulation-efficiency integrated waveguide modulator-laser diode at 448 nm,” ACS Photonics 3(2), 262–268 (2016).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar () InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2,” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

Suemoto, T.

S. Chen, T. Ito, A. Asahara, M. Yoshita, W. Liu, J. Zhang, B. Zhang, T. Suemoto, and H. Akiyama, “Spectral dynamics of picosecond gain-switched pulses from nitride-based vertical-cavity surface-emitting lasers,” Sci. Rep. 4(1), 4325 (2014).
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S. Chen, A. Asahara, T. Ito, J. Zhang, B. Zhang, T. Suemoto, M. Yoshita, and H. Akiyama, “Gain-switching dynamics in optically pumped single-mode InGaN vertical-cavity surface-emitting lasers,” Opt. Express 22(4), 4196–4201 (2014).
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Suk Cho, Y.

Q. Sun, Y. Suk Cho, B. H. Kong, H. Koun Cho, T. Shine Ko, C. D. Yerino, I.-H. Lee, and J. Han, “N-face GaN growth on c-plane sapphire by metalorganic chemical vapor depositon,” J. Cryst. Growth 311(10), 2948–2952 (2009).
[Crossref]

Sun, Q.

Y. Sun, K. Zhou, Q. Sun, J. P. Liu, M. X. Feng, Z. C. Li, Y. Zhou, L. Q. Zhang, D. Y. Li, S. M. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10(9), 595–599 (2016).
[Crossref]

Q. Sun, Y. Suk Cho, B. H. Kong, H. Koun Cho, T. Shine Ko, C. D. Yerino, I.-H. Lee, and J. Han, “N-face GaN growth on c-plane sapphire by metalorganic chemical vapor depositon,” J. Cryst. Growth 311(10), 2948–2952 (2009).
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Sun, X.

S. D. Hersee, X. Sun, and X. Wang, “The controlled growth of GaN nanowires,” Nano Lett. 6(8), 1808–1811 (2006).
[Crossref] [PubMed]

Sun, Y.

Y. Sun, K. Zhou, Q. Sun, J. P. Liu, M. X. Feng, Z. C. Li, Y. Zhou, L. Q. Zhang, D. Y. Li, S. M. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10(9), 595–599 (2016).
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Sun, Y. J.

K. Bao, X. N. Kang, B. Zhang, T. Dai, Y. J. Sun, Q. Fu, G. J. Lian, G. C. Xiong, G. Y. Zhang, and Y. Chen, “Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off,” Appl. Phys. Lett. 92(14), 141104 (2008).
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Takeuchi, T.

D. Iida, S. Kawai, N. Ema, T. Tsuchiya, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its appplication to light-emitting diodes,” Appl. Phys. Lett. 105(7), 072101 (2014).
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Tanaka, A.

Tanaka, S.

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar () InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2,” Appl. Phys. Express 4(8), 082104 (2011).
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Tao, R.

R. Tao, K. Kamide, M. Arita, S. Kako, and Y. Arakawa, “Room-temperature observation of trapped exciton-polariton emission in GaN/AlGaN Microcavities with air-gap/III-nitride distributed Bragg reflectors,” ACS Photonics 3(7), 1182–1187 (2016).
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Titov, A.

Y. X. Yang, Y. Zheng, W. R. Cao, A. Titov, J. Hyvonen, J. R. Manders, J. G. Xue, P. H. Holloway, and L. Qian, “High-efficiecy light-emitting devices based on quantum dots with tailored nanostructures,” Nat. Photonics 9, 259 (2015).

Tou, T. Y.

T. W. Reenaas, Y. S. Lee, F. R. Chowdhury, M. G. Gupta, Y. Y. Tsui, T. Y. Tou, S. L. Yap, S. Y. Kok, and S. S. Yap, “Femtosecond and nanosecond pulsed laser deposition of silicon and germanium,” Appl. Surf. Sci. 354, 206–211 (2015).
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Trampert, A.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Tsai, C. T.

Tsuchiya, T.

D. Iida, S. Kawai, N. Ema, T. Tsuchiya, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its appplication to light-emitting diodes,” Appl. Phys. Lett. 105(7), 072101 (2014).
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Tsui, Y. Y.

T. W. Reenaas, Y. S. Lee, F. R. Chowdhury, M. G. Gupta, Y. Y. Tsui, T. Y. Tou, S. L. Yap, S. Y. Kok, and S. S. Yap, “Femtosecond and nanosecond pulsed laser deposition of silicon and germanium,” Appl. Surf. Sci. 354, 206–211 (2015).
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Vaccaro, P. O.

T. Kamikawa, Y. Kawaguchi, P. O. Vaccaro, S. Ito, and H. Kawanishi, “Highly reliable 500 mW laser diodes with epitaxially grown AlON coating for high-density optical storage,” Appl. Phys. Lett. 95(3), 031106 (2009).
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P. Vasil’ev, I. H. White, and J. Gowar, “Fast phenomena in semiconductor lasers,” Rep. Prog. Phys. 63(12), 1997–2042 (2000).
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B. Beaumont, P. Vennéguès, and P. Gibart, “Epitaxial lateral overgrowth of GaN,” Phys. Status Solidi 227, 1–43 (2001).
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P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Wang, X.

S. D. Hersee, X. Sun, and X. Wang, “The controlled growth of GaN nanowires,” Nano Lett. 6(8), 1808–1811 (2006).
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Weber, R.

Wen, P.

White, I. H.

P. Vasil’ev, I. H. White, and J. Gowar, “Fast phenomena in semiconductor lasers,” Rep. Prog. Phys. 63(12), 1997–2042 (2000).
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Wong, W. S.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
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Wu, K. H.

S. C. Chen, D. H. Hsieh, H. Jiang, Y. K. Liao, F. I. Lai, C. H. Chen, C. W. Luo, J. Y. Juang, Y. L. Chueh, K. H. Wu, and H. C. Kuo, “Growth and characterization of Cu(In,Ga)Se2 thin films by nanosecond and femtosecond pulsed laser deposition,” Nanoscale Res. Lett. 9(1), 280 (2014).
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Xiong, G. C.

K. Bao, X. N. Kang, B. Zhang, T. Dai, Y. J. Sun, Q. Fu, G. J. Lian, G. C. Xiong, G. Y. Zhang, and Y. Chen, “Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off,” Appl. Phys. Lett. 92(14), 141104 (2008).
[Crossref]

Xue, G.

M. E. Lin, G. Xue, G. L. Zhou, J. E. Greene, and H. Morkoc, “p-type zine-blende GaN on GaAs substrates,” Appl. Phys. Lett. 63(7), 932–933 (1993).
[Crossref]

Xue, J. G.

Y. X. Yang, Y. Zheng, W. R. Cao, A. Titov, J. Hyvonen, J. R. Manders, J. G. Xue, P. H. Holloway, and L. Qian, “High-efficiecy light-emitting devices based on quantum dots with tailored nanostructures,” Nat. Photonics 9, 259 (2015).

Yang, H.

A. Tian, J. Liu, L. Zhang, Z. Li, M. Ikeda, S. Zhang, D. Li, P. Wen, F. Zhang, Y. Cheng, X. Fan, and H. Yang, “Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region,” Opt. Express 25(1), 415–421 (2017).
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Y. Sun, K. Zhou, Q. Sun, J. P. Liu, M. X. Feng, Z. C. Li, Y. Zhou, L. Q. Zhang, D. Y. Li, S. M. Zhang, M. Ikeda, S. Liu, and H. Yang, “Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si,” Nat. Photonics 10(9), 595–599 (2016).
[Crossref]

Yang, Y. X.

Y. X. Yang, Y. Zheng, W. R. Cao, A. Titov, J. Hyvonen, J. R. Manders, J. G. Xue, P. H. Holloway, and L. Qian, “High-efficiecy light-emitting devices based on quantum dots with tailored nanostructures,” Nat. Photonics 9, 259 (2015).

Yap, S. L.

T. W. Reenaas, Y. S. Lee, F. R. Chowdhury, M. G. Gupta, Y. Y. Tsui, T. Y. Tou, S. L. Yap, S. Y. Kok, and S. S. Yap, “Femtosecond and nanosecond pulsed laser deposition of silicon and germanium,” Appl. Surf. Sci. 354, 206–211 (2015).
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Figures (5)

Fig. 1
Fig. 1 Schematic structure of GaN laser diode fabricated for present study.
Fig. 2
Fig. 2 Time- and spectrally resolved streak camera images of the gain-switched pulses from GaN LD with electric pulse excitation durations of (a) 1, (b) 2, and (c) 5 ns, respectively. (d) Corresponding wavelength-integrated waveforms of the pulses. (e) Normalized time-integrated lasing spectra of the pulses.
Fig. 3
Fig. 3 (a) Enlarged streak camera image of the gain-switched pulses from GaN LD with 1-ns and 21.5-V current injection. (b) Wavelength-integrated waveforms of the total pulse, short wavelength side, and long wavelength side corresponding to (a). (c) Separated waveforms of the first peaks, steady-state components, and total waveforms of the pulses with injection durations of 1, 2, and 5 ns.
Fig. 4
Fig. 4 (a) Time- and spectrally resolved streak camera images of the gain-switched pulses from GaN LD with various driving voltages and a 1-ns duration. (b) 2D plot of time-integrated spectra of the pulses with various driving voltages. The arrow indicates the direction of increasing driving voltage. (c) Separated waveforms of the first peaks, steady-state components, and total waveforms of the pulses with various driving voltages. (d) 2D plot of waveforms with various driving voltages of experimental results (upper panel) and simulation results (bottom panel). The vertical arrow indicates the direction of increasing driving voltage.
Fig. 5
Fig. 5 Delay time and pulse width of the first peaks, and the pulse width of the steady-state components with various driving voltages.

Equations (2)

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d n / d t = n ( t ) Γ v g g ( n ) s / ( 1 + ε s ) n / τ r
d s / d t = Γ v g g ( n ) s / ( 1 + ε s ) s / τ p + β n / τ r

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