Abstract

By observing the morphology evolution of green InGaN/GaN quantum well (QW) and studying the catholuminescence (CL) property, we investigate indium-segregation-related defects that are formed at green InGaN/GaN QW interfaces. Meanwhile, we also propose the approach and suggest the mechanism to remove them for green InGaN/GaN QW grown on both GaN templates and free-standing GaN substrates. By engineering the interface of green InGaN/GaN QWs, we have achieved green laser diode (LD) structure with low threshold current density of 1.85 kA cm−2. The output power of the green LD is 58 mW at a current density of 6 kA cm−2 under continuous-wave operation at room temperature.

© 2017 Optical Society of America

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References

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  1. D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94(8), 081119 (2009).
    [Crossref]
  2. A. Avramescu, T. Lermer, J. Müller, C. Eichler, G. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss, “True green laser diodes at 524 nm with 50 mW continuous wave output power on c-plane GaN,” Appl. Phys. Express 3(6), 061003 (2010).
    [Crossref]
  3. T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510-515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
    [Crossref]
  4. T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “InGaN-based 518 nm and 488 nm laser diodes on c-plane GaN substrate,” Phys. Status Solidi., A Appl. Mater. Sci. 207(6), 1389–1392 (2010).
    [Crossref]
  5. D. Sizov, R. Bhat, A. Heberle, N. Visovsky, and C. Zah, “True-green (11-22) plane optically pumped laser with cleaved m-plane facets,” Appl. Phys. Lett. 99(4), 041117 (2011).
    [Crossref]
  6. C. Y. Huang, M. T. Hardy, K. Fujito, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20-21) InGaN/GaN quantum wells,” Appl. Phys. Lett. 99(24), 241115 (2011).
    [Crossref]
  7. Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar (20-21) free-standing GaN substrate,” Appl. Phys. Express 2, 082101 (2009).
    [Crossref]
  8. S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
    [Crossref]
  9. K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
    [Crossref]
  10. D. I. Florescu, S. M. Ting, V. N. Merai, A. Parekh, D. S. Lee, E. A. Armour, and W. E. Quinn, “InGaN quantum well epilayers morphology evolution under a wide range of MOCVD growth parameter sets,” Phys. Status Solidi. C: Curr. Top. Solid State Phys. 3(6), 1811–1814 (2006).
    [Crossref]
  11. R. A. Oliver, M. J. Kappers, C. J. Humphreys, and G. A. D. Briggs, “Growth modes in heteroepitaxy of InGaN on GaN,” J. Appl. Phys. 97(1), 013707 (2005).
    [Crossref]
  12. A. I. Duff, L. Lymperakis, and J. Neugebauer, “Understanding and controlling indium incorporation and surface segregation on InxGaN1-xN surfaces: An ab initio approach,” Phys. Rev. B 89(8), 085307 (2014).
    [Crossref]
  13. G. B. Stringfellow, “Microstructures produced during the epitaxial growth of InGaN alloys,” J. Cryst. Growth 312(6), 735–749 (2010).
    [Crossref]
  14. F. C.-P. Massabuau, M. J. Davies, F. Oehler, S. K. Pamenter, E. J. Thrush, M. J. Kappers, A. Kovács, T. Williams, M. A. Hopkins, C. J. Humphreys, P. Dawson, R. E. Dunin-Borkowski, J. Etheridge, D. W. E. Allsopp, and R. A. Oliver, “The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem,” Appl. Phys. Lett. 105(11), 112110 (2014).
    [Crossref]
  15. F. C.-P. Massabuau, S.-L. Sahonta, L. Trinh-Xuan, S. Rhode, T. J. Puchtler, M. J. Kappers, C. J. Humphreys, and R. A. Oliver, “Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures,” Appl. Phys. Lett. 101(21), 212107 (2012).
    [Crossref]
  16. Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, D. G. Zhao, D. S. Jiang, H. B. Wang, and H. Yang, “Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diodes structures during the epitaxial growth,” Appl. Phys. Lett. 103(15), 152109 (2013).
    [Crossref]
  17. J. P. Liu, Y. T. Wang, H. Yang, D. S. Jiang, U. Jahn, and P. K. Ploog, “Investigation on V-defects in quaternary AlInGaN epilayers,” Appl. Phys. Lett. 84(26), 5449–5451 (2004).
    [Crossref]
  18. M. Shiojiri, C. C. Chuo, J. T. Hsu, J. R. Yang, and H. Saijo, “Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers,” J. Appl. Phys. 99(7), 073505 (2006).
    [Crossref]
  19. D. I. Florescu, S. M. Ting, J. C. Ramer, D. S. Lee, V. N. Merai, A. Parkeh, D. Lu, E. A. Armour, and L. Chernyak, “Investigation of V-defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire,” Appl. Phys. Lett. 83(1), 33–35 (2003).
    [Crossref]
  20. M. S. Kumar, J. Y. Park, Y. S. Lee, S. J. Chung, C. H. Hong, and E. K. Suh, “Effect of barrier growth temperature on morphological evolution of green InGaN/GaN multi-quantum well heterostructures,” J. Phys. D Appl. Phys. 40(17), 5050–5054 (2007).
    [Crossref]
  21. X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
    [Crossref]
  22. A. Q. Tian, J. P. Liu, M. Ikeda, S. M. Zhang, Z. C. Li, M. X. Feng, K. Zhou, D. Y. Li, L. Q. Zhang, P. Y. Wen, F. Zhang, and H. Yang, “Conductivity enhancement in AlGaN: Mg by suppressing the incorporation of carbon impurity,” Appl. Phys. Express 8(5), 051001 (2015).
    [Crossref]

2015 (1)

A. Q. Tian, J. P. Liu, M. Ikeda, S. M. Zhang, Z. C. Li, M. X. Feng, K. Zhou, D. Y. Li, L. Q. Zhang, P. Y. Wen, F. Zhang, and H. Yang, “Conductivity enhancement in AlGaN: Mg by suppressing the incorporation of carbon impurity,” Appl. Phys. Express 8(5), 051001 (2015).
[Crossref]

2014 (2)

A. I. Duff, L. Lymperakis, and J. Neugebauer, “Understanding and controlling indium incorporation and surface segregation on InxGaN1-xN surfaces: An ab initio approach,” Phys. Rev. B 89(8), 085307 (2014).
[Crossref]

F. C.-P. Massabuau, M. J. Davies, F. Oehler, S. K. Pamenter, E. J. Thrush, M. J. Kappers, A. Kovács, T. Williams, M. A. Hopkins, C. J. Humphreys, P. Dawson, R. E. Dunin-Borkowski, J. Etheridge, D. W. E. Allsopp, and R. A. Oliver, “The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem,” Appl. Phys. Lett. 105(11), 112110 (2014).
[Crossref]

2013 (1)

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, D. G. Zhao, D. S. Jiang, H. B. Wang, and H. Yang, “Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diodes structures during the epitaxial growth,” Appl. Phys. Lett. 103(15), 152109 (2013).
[Crossref]

2012 (3)

F. C.-P. Massabuau, S.-L. Sahonta, L. Trinh-Xuan, S. Rhode, T. J. Puchtler, M. J. Kappers, C. J. Humphreys, and R. A. Oliver, “Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures,” Appl. Phys. Lett. 101(21), 212107 (2012).
[Crossref]

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

2011 (2)

D. Sizov, R. Bhat, A. Heberle, N. Visovsky, and C. Zah, “True-green (11-22) plane optically pumped laser with cleaved m-plane facets,” Appl. Phys. Lett. 99(4), 041117 (2011).
[Crossref]

C. Y. Huang, M. T. Hardy, K. Fujito, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20-21) InGaN/GaN quantum wells,” Appl. Phys. Lett. 99(24), 241115 (2011).
[Crossref]

2010 (3)

G. B. Stringfellow, “Microstructures produced during the epitaxial growth of InGaN alloys,” J. Cryst. Growth 312(6), 735–749 (2010).
[Crossref]

A. Avramescu, T. Lermer, J. Müller, C. Eichler, G. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss, “True green laser diodes at 524 nm with 50 mW continuous wave output power on c-plane GaN,” Appl. Phys. Express 3(6), 061003 (2010).
[Crossref]

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “InGaN-based 518 nm and 488 nm laser diodes on c-plane GaN substrate,” Phys. Status Solidi., A Appl. Mater. Sci. 207(6), 1389–1392 (2010).
[Crossref]

2009 (3)

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94(8), 081119 (2009).
[Crossref]

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510-515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar (20-21) free-standing GaN substrate,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

2007 (1)

M. S. Kumar, J. Y. Park, Y. S. Lee, S. J. Chung, C. H. Hong, and E. K. Suh, “Effect of barrier growth temperature on morphological evolution of green InGaN/GaN multi-quantum well heterostructures,” J. Phys. D Appl. Phys. 40(17), 5050–5054 (2007).
[Crossref]

2006 (2)

M. Shiojiri, C. C. Chuo, J. T. Hsu, J. R. Yang, and H. Saijo, “Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers,” J. Appl. Phys. 99(7), 073505 (2006).
[Crossref]

D. I. Florescu, S. M. Ting, V. N. Merai, A. Parekh, D. S. Lee, E. A. Armour, and W. E. Quinn, “InGaN quantum well epilayers morphology evolution under a wide range of MOCVD growth parameter sets,” Phys. Status Solidi. C: Curr. Top. Solid State Phys. 3(6), 1811–1814 (2006).
[Crossref]

2005 (1)

R. A. Oliver, M. J. Kappers, C. J. Humphreys, and G. A. D. Briggs, “Growth modes in heteroepitaxy of InGaN on GaN,” J. Appl. Phys. 97(1), 013707 (2005).
[Crossref]

2004 (1)

J. P. Liu, Y. T. Wang, H. Yang, D. S. Jiang, U. Jahn, and P. K. Ploog, “Investigation on V-defects in quaternary AlInGaN epilayers,” Appl. Phys. Lett. 84(26), 5449–5451 (2004).
[Crossref]

2003 (1)

D. I. Florescu, S. M. Ting, J. C. Ramer, D. S. Lee, V. N. Merai, A. Parkeh, D. Lu, E. A. Armour, and L. Chernyak, “Investigation of V-defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire,” Appl. Phys. Lett. 83(1), 33–35 (2003).
[Crossref]

1998 (1)

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
[Crossref]

Abare, A.

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
[Crossref]

Adachi, M.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar (20-21) free-standing GaN substrate,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Akita, K.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar (20-21) free-standing GaN substrate,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Allsopp, D. W. E.

F. C.-P. Massabuau, M. J. Davies, F. Oehler, S. K. Pamenter, E. J. Thrush, M. J. Kappers, A. Kovács, T. Williams, M. A. Hopkins, C. J. Humphreys, P. Dawson, R. E. Dunin-Borkowski, J. Etheridge, D. W. E. Allsopp, and R. A. Oliver, “The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem,” Appl. Phys. Lett. 105(11), 112110 (2014).
[Crossref]

Armour, E. A.

D. I. Florescu, S. M. Ting, V. N. Merai, A. Parekh, D. S. Lee, E. A. Armour, and W. E. Quinn, “InGaN quantum well epilayers morphology evolution under a wide range of MOCVD growth parameter sets,” Phys. Status Solidi. C: Curr. Top. Solid State Phys. 3(6), 1811–1814 (2006).
[Crossref]

D. I. Florescu, S. M. Ting, J. C. Ramer, D. S. Lee, V. N. Merai, A. Parkeh, D. Lu, E. A. Armour, and L. Chernyak, “Investigation of V-defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire,” Appl. Phys. Lett. 83(1), 33–35 (2003).
[Crossref]

Avramescu, A.

A. Avramescu, T. Lermer, J. Müller, C. Eichler, G. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss, “True green laser diodes at 524 nm with 50 mW continuous wave output power on c-plane GaN,” Appl. Phys. Express 3(6), 061003 (2010).
[Crossref]

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94(8), 081119 (2009).
[Crossref]

Bhat, R.

D. Sizov, R. Bhat, A. Heberle, N. Visovsky, and C. Zah, “True-green (11-22) plane optically pumped laser with cleaved m-plane facets,” Appl. Phys. Lett. 99(4), 041117 (2011).
[Crossref]

Breidenassel, A.

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94(8), 081119 (2009).
[Crossref]

Briggs, G. A. D.

R. A. Oliver, M. J. Kappers, C. J. Humphreys, and G. A. D. Briggs, “Growth modes in heteroepitaxy of InGaN on GaN,” J. Appl. Phys. 97(1), 013707 (2005).
[Crossref]

Brüderl, G.

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94(8), 081119 (2009).
[Crossref]

Bruederl, G.

A. Avramescu, T. Lermer, J. Müller, C. Eichler, G. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss, “True green laser diodes at 524 nm with 50 mW continuous wave output power on c-plane GaN,” Appl. Phys. Express 3(6), 061003 (2010).
[Crossref]

Chernyak, L.

D. I. Florescu, S. M. Ting, J. C. Ramer, D. S. Lee, V. N. Merai, A. Parkeh, D. Lu, E. A. Armour, and L. Chernyak, “Investigation of V-defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire,” Appl. Phys. Lett. 83(1), 33–35 (2003).
[Crossref]

Chung, S. J.

M. S. Kumar, J. Y. Park, Y. S. Lee, S. J. Chung, C. H. Hong, and E. K. Suh, “Effect of barrier growth temperature on morphological evolution of green InGaN/GaN multi-quantum well heterostructures,” J. Phys. D Appl. Phys. 40(17), 5050–5054 (2007).
[Crossref]

Chuo, C. C.

M. Shiojiri, C. C. Chuo, J. T. Hsu, J. R. Yang, and H. Saijo, “Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers,” J. Appl. Phys. 99(7), 073505 (2006).
[Crossref]

Davies, M. J.

F. C.-P. Massabuau, M. J. Davies, F. Oehler, S. K. Pamenter, E. J. Thrush, M. J. Kappers, A. Kovács, T. Williams, M. A. Hopkins, C. J. Humphreys, P. Dawson, R. E. Dunin-Borkowski, J. Etheridge, D. W. E. Allsopp, and R. A. Oliver, “The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem,” Appl. Phys. Lett. 105(11), 112110 (2014).
[Crossref]

Dawson, P.

F. C.-P. Massabuau, M. J. Davies, F. Oehler, S. K. Pamenter, E. J. Thrush, M. J. Kappers, A. Kovács, T. Williams, M. A. Hopkins, C. J. Humphreys, P. Dawson, R. E. Dunin-Borkowski, J. Etheridge, D. W. E. Allsopp, and R. A. Oliver, “The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem,” Appl. Phys. Lett. 105(11), 112110 (2014).
[Crossref]

DenBaars, S. P.

C. Y. Huang, M. T. Hardy, K. Fujito, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20-21) InGaN/GaN quantum wells,” Appl. Phys. Lett. 99(24), 241115 (2011).
[Crossref]

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
[Crossref]

Duff, A. I.

A. I. Duff, L. Lymperakis, and J. Neugebauer, “Understanding and controlling indium incorporation and surface segregation on InxGaN1-xN surfaces: An ab initio approach,” Phys. Rev. B 89(8), 085307 (2014).
[Crossref]

Dunin-Borkowski, R. E.

F. C.-P. Massabuau, M. J. Davies, F. Oehler, S. K. Pamenter, E. J. Thrush, M. J. Kappers, A. Kovács, T. Williams, M. A. Hopkins, C. J. Humphreys, P. Dawson, R. E. Dunin-Borkowski, J. Etheridge, D. W. E. Allsopp, and R. A. Oliver, “The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem,” Appl. Phys. Lett. 105(11), 112110 (2014).
[Crossref]

Eichler, C.

A. Avramescu, T. Lermer, J. Müller, C. Eichler, G. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss, “True green laser diodes at 524 nm with 50 mW continuous wave output power on c-plane GaN,” Appl. Phys. Express 3(6), 061003 (2010).
[Crossref]

Elsass, C. R.

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
[Crossref]

Enya, Y.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar (20-21) free-standing GaN substrate,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Etheridge, J.

F. C.-P. Massabuau, M. J. Davies, F. Oehler, S. K. Pamenter, E. J. Thrush, M. J. Kappers, A. Kovács, T. Williams, M. A. Hopkins, C. J. Humphreys, P. Dawson, R. E. Dunin-Borkowski, J. Etheridge, D. W. E. Allsopp, and R. A. Oliver, “The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem,” Appl. Phys. Lett. 105(11), 112110 (2014).
[Crossref]

Feezell, D. F.

C. Y. Huang, M. T. Hardy, K. Fujito, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20-21) InGaN/GaN quantum wells,” Appl. Phys. Lett. 99(24), 241115 (2011).
[Crossref]

Feng, M. X.

A. Q. Tian, J. P. Liu, M. Ikeda, S. M. Zhang, Z. C. Li, M. X. Feng, K. Zhou, D. Y. Li, L. Q. Zhang, P. Y. Wen, F. Zhang, and H. Yang, “Conductivity enhancement in AlGaN: Mg by suppressing the incorporation of carbon impurity,” Appl. Phys. Express 8(5), 051001 (2015).
[Crossref]

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, D. G. Zhao, D. S. Jiang, H. B. Wang, and H. Yang, “Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diodes structures during the epitaxial growth,” Appl. Phys. Lett. 103(15), 152109 (2013).
[Crossref]

Florescu, D. I.

D. I. Florescu, S. M. Ting, V. N. Merai, A. Parekh, D. S. Lee, E. A. Armour, and W. E. Quinn, “InGaN quantum well epilayers morphology evolution under a wide range of MOCVD growth parameter sets,” Phys. Status Solidi. C: Curr. Top. Solid State Phys. 3(6), 1811–1814 (2006).
[Crossref]

D. I. Florescu, S. M. Ting, J. C. Ramer, D. S. Lee, V. N. Merai, A. Parkeh, D. Lu, E. A. Armour, and L. Chernyak, “Investigation of V-defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire,” Appl. Phys. Lett. 83(1), 33–35 (2003).
[Crossref]

Fujito, K.

C. Y. Huang, M. T. Hardy, K. Fujito, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20-21) InGaN/GaN quantum wells,” Appl. Phys. Lett. 99(24), 241115 (2011).
[Crossref]

Fuutagawa, N.

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

Hamaguchi, T.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

Hardy, M. T.

C. Y. Huang, M. T. Hardy, K. Fujito, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20-21) InGaN/GaN quantum wells,” Appl. Phys. Lett. 99(24), 241115 (2011).
[Crossref]

Heberle, A.

D. Sizov, R. Bhat, A. Heberle, N. Visovsky, and C. Zah, “True-green (11-22) plane optically pumped laser with cleaved m-plane facets,” Appl. Phys. Lett. 99(4), 041117 (2011).
[Crossref]

Hong, C. H.

M. S. Kumar, J. Y. Park, Y. S. Lee, S. J. Chung, C. H. Hong, and E. K. Suh, “Effect of barrier growth temperature on morphological evolution of green InGaN/GaN multi-quantum well heterostructures,” J. Phys. D Appl. Phys. 40(17), 5050–5054 (2007).
[Crossref]

Hopkins, M. A.

F. C.-P. Massabuau, M. J. Davies, F. Oehler, S. K. Pamenter, E. J. Thrush, M. J. Kappers, A. Kovács, T. Williams, M. A. Hopkins, C. J. Humphreys, P. Dawson, R. E. Dunin-Borkowski, J. Etheridge, D. W. E. Allsopp, and R. A. Oliver, “The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem,” Appl. Phys. Lett. 105(11), 112110 (2014).
[Crossref]

Hsu, J. T.

M. Shiojiri, C. C. Chuo, J. T. Hsu, J. R. Yang, and H. Saijo, “Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers,” J. Appl. Phys. 99(7), 073505 (2006).
[Crossref]

Huang, C. Y.

C. Y. Huang, M. T. Hardy, K. Fujito, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20-21) InGaN/GaN quantum wells,” Appl. Phys. Lett. 99(24), 241115 (2011).
[Crossref]

Humphreys, C. J.

F. C.-P. Massabuau, M. J. Davies, F. Oehler, S. K. Pamenter, E. J. Thrush, M. J. Kappers, A. Kovács, T. Williams, M. A. Hopkins, C. J. Humphreys, P. Dawson, R. E. Dunin-Borkowski, J. Etheridge, D. W. E. Allsopp, and R. A. Oliver, “The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem,” Appl. Phys. Lett. 105(11), 112110 (2014).
[Crossref]

F. C.-P. Massabuau, S.-L. Sahonta, L. Trinh-Xuan, S. Rhode, T. J. Puchtler, M. J. Kappers, C. J. Humphreys, and R. A. Oliver, “Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures,” Appl. Phys. Lett. 101(21), 212107 (2012).
[Crossref]

R. A. Oliver, M. J. Kappers, C. J. Humphreys, and G. A. D. Briggs, “Growth modes in heteroepitaxy of InGaN on GaN,” J. Appl. Phys. 97(1), 013707 (2005).
[Crossref]

Ikeda, M.

A. Q. Tian, J. P. Liu, M. Ikeda, S. M. Zhang, Z. C. Li, M. X. Feng, K. Zhou, D. Y. Li, L. Q. Zhang, P. Y. Wen, F. Zhang, and H. Yang, “Conductivity enhancement in AlGaN: Mg by suppressing the incorporation of carbon impurity,” Appl. Phys. Express 8(5), 051001 (2015).
[Crossref]

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

Ikegami, T.

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar (20-21) free-standing GaN substrate,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Jahn, U.

J. P. Liu, Y. T. Wang, H. Yang, D. S. Jiang, U. Jahn, and P. K. Ploog, “Investigation on V-defects in quaternary AlInGaN epilayers,” Appl. Phys. Lett. 84(26), 5449–5451 (2004).
[Crossref]

Jiang, D. S.

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, D. G. Zhao, D. S. Jiang, H. B. Wang, and H. Yang, “Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diodes structures during the epitaxial growth,” Appl. Phys. Lett. 103(15), 152109 (2013).
[Crossref]

J. P. Liu, Y. T. Wang, H. Yang, D. S. Jiang, U. Jahn, and P. K. Ploog, “Investigation on V-defects in quaternary AlInGaN epilayers,” Appl. Phys. Lett. 84(26), 5449–5451 (2004).
[Crossref]

Kappers, M. J.

F. C.-P. Massabuau, M. J. Davies, F. Oehler, S. K. Pamenter, E. J. Thrush, M. J. Kappers, A. Kovács, T. Williams, M. A. Hopkins, C. J. Humphreys, P. Dawson, R. E. Dunin-Borkowski, J. Etheridge, D. W. E. Allsopp, and R. A. Oliver, “The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem,” Appl. Phys. Lett. 105(11), 112110 (2014).
[Crossref]

F. C.-P. Massabuau, S.-L. Sahonta, L. Trinh-Xuan, S. Rhode, T. J. Puchtler, M. J. Kappers, C. J. Humphreys, and R. A. Oliver, “Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures,” Appl. Phys. Lett. 101(21), 212107 (2012).
[Crossref]

R. A. Oliver, M. J. Kappers, C. J. Humphreys, and G. A. D. Briggs, “Growth modes in heteroepitaxy of InGaN on GaN,” J. Appl. Phys. 97(1), 013707 (2005).
[Crossref]

Katayama, K.

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar (20-21) free-standing GaN substrate,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Keller, S.

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
[Crossref]

Kovács, A.

F. C.-P. Massabuau, M. J. Davies, F. Oehler, S. K. Pamenter, E. J. Thrush, M. J. Kappers, A. Kovács, T. Williams, M. A. Hopkins, C. J. Humphreys, P. Dawson, R. E. Dunin-Borkowski, J. Etheridge, D. W. E. Allsopp, and R. A. Oliver, “The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem,” Appl. Phys. Lett. 105(11), 112110 (2014).
[Crossref]

Kozaki, T.

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “InGaN-based 518 nm and 488 nm laser diodes on c-plane GaN substrate,” Phys. Status Solidi., A Appl. Mater. Sci. 207(6), 1389–1392 (2010).
[Crossref]

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510-515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[Crossref]

Kumano, T.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

Kumar, M. S.

M. S. Kumar, J. Y. Park, Y. S. Lee, S. J. Chung, C. H. Hong, and E. K. Suh, “Effect of barrier growth temperature on morphological evolution of green InGaN/GaN multi-quantum well heterostructures,” J. Phys. D Appl. Phys. 40(17), 5050–5054 (2007).
[Crossref]

Kyono, T.

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar (20-21) free-standing GaN substrate,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Lee, D. S.

D. I. Florescu, S. M. Ting, V. N. Merai, A. Parekh, D. S. Lee, E. A. Armour, and W. E. Quinn, “InGaN quantum well epilayers morphology evolution under a wide range of MOCVD growth parameter sets,” Phys. Status Solidi. C: Curr. Top. Solid State Phys. 3(6), 1811–1814 (2006).
[Crossref]

D. I. Florescu, S. M. Ting, J. C. Ramer, D. S. Lee, V. N. Merai, A. Parkeh, D. Lu, E. A. Armour, and L. Chernyak, “Investigation of V-defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire,” Appl. Phys. Lett. 83(1), 33–35 (2003).
[Crossref]

Lee, Y. S.

M. S. Kumar, J. Y. Park, Y. S. Lee, S. J. Chung, C. H. Hong, and E. K. Suh, “Effect of barrier growth temperature on morphological evolution of green InGaN/GaN multi-quantum well heterostructures,” J. Phys. D Appl. Phys. 40(17), 5050–5054 (2007).
[Crossref]

Lermer, T.

A. Avramescu, T. Lermer, J. Müller, C. Eichler, G. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss, “True green laser diodes at 524 nm with 50 mW continuous wave output power on c-plane GaN,” Appl. Phys. Express 3(6), 061003 (2010).
[Crossref]

Li, D. Y.

A. Q. Tian, J. P. Liu, M. Ikeda, S. M. Zhang, Z. C. Li, M. X. Feng, K. Zhou, D. Y. Li, L. Q. Zhang, P. Y. Wen, F. Zhang, and H. Yang, “Conductivity enhancement in AlGaN: Mg by suppressing the incorporation of carbon impurity,” Appl. Phys. Express 8(5), 051001 (2015).
[Crossref]

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, D. G. Zhao, D. S. Jiang, H. B. Wang, and H. Yang, “Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diodes structures during the epitaxial growth,” Appl. Phys. Lett. 103(15), 152109 (2013).
[Crossref]

Li, Z. C.

A. Q. Tian, J. P. Liu, M. Ikeda, S. M. Zhang, Z. C. Li, M. X. Feng, K. Zhou, D. Y. Li, L. Q. Zhang, P. Y. Wen, F. Zhang, and H. Yang, “Conductivity enhancement in AlGaN: Mg by suppressing the incorporation of carbon impurity,” Appl. Phys. Express 8(5), 051001 (2015).
[Crossref]

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, D. G. Zhao, D. S. Jiang, H. B. Wang, and H. Yang, “Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diodes structures during the epitaxial growth,” Appl. Phys. Lett. 103(15), 152109 (2013).
[Crossref]

Liu, J. P.

A. Q. Tian, J. P. Liu, M. Ikeda, S. M. Zhang, Z. C. Li, M. X. Feng, K. Zhou, D. Y. Li, L. Q. Zhang, P. Y. Wen, F. Zhang, and H. Yang, “Conductivity enhancement in AlGaN: Mg by suppressing the incorporation of carbon impurity,” Appl. Phys. Express 8(5), 051001 (2015).
[Crossref]

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, D. G. Zhao, D. S. Jiang, H. B. Wang, and H. Yang, “Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diodes structures during the epitaxial growth,” Appl. Phys. Lett. 103(15), 152109 (2013).
[Crossref]

J. P. Liu, Y. T. Wang, H. Yang, D. S. Jiang, U. Jahn, and P. K. Ploog, “Investigation on V-defects in quaternary AlInGaN epilayers,” Appl. Phys. Lett. 84(26), 5449–5451 (2004).
[Crossref]

Lu, D.

D. I. Florescu, S. M. Ting, J. C. Ramer, D. S. Lee, V. N. Merai, A. Parkeh, D. Lu, E. A. Armour, and L. Chernyak, “Investigation of V-defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire,” Appl. Phys. Lett. 83(1), 33–35 (2003).
[Crossref]

Lutgen, S.

A. Avramescu, T. Lermer, J. Müller, C. Eichler, G. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss, “True green laser diodes at 524 nm with 50 mW continuous wave output power on c-plane GaN,” Appl. Phys. Express 3(6), 061003 (2010).
[Crossref]

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94(8), 081119 (2009).
[Crossref]

Lymperakis, L.

A. I. Duff, L. Lymperakis, and J. Neugebauer, “Understanding and controlling indium incorporation and surface segregation on InxGaN1-xN surfaces: An ab initio approach,” Phys. Rev. B 89(8), 085307 (2014).
[Crossref]

Mack, M.

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
[Crossref]

Massabuau, F. C.-P.

F. C.-P. Massabuau, M. J. Davies, F. Oehler, S. K. Pamenter, E. J. Thrush, M. J. Kappers, A. Kovács, T. Williams, M. A. Hopkins, C. J. Humphreys, P. Dawson, R. E. Dunin-Borkowski, J. Etheridge, D. W. E. Allsopp, and R. A. Oliver, “The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem,” Appl. Phys. Lett. 105(11), 112110 (2014).
[Crossref]

F. C.-P. Massabuau, S.-L. Sahonta, L. Trinh-Xuan, S. Rhode, T. J. Puchtler, M. J. Kappers, C. J. Humphreys, and R. A. Oliver, “Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures,” Appl. Phys. Lett. 101(21), 212107 (2012).
[Crossref]

Masui, S.

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “InGaN-based 518 nm and 488 nm laser diodes on c-plane GaN substrate,” Phys. Status Solidi., A Appl. Mater. Sci. 207(6), 1389–1392 (2010).
[Crossref]

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510-515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[Crossref]

Merai, V. N.

D. I. Florescu, S. M. Ting, V. N. Merai, A. Parekh, D. S. Lee, E. A. Armour, and W. E. Quinn, “InGaN quantum well epilayers morphology evolution under a wide range of MOCVD growth parameter sets,” Phys. Status Solidi. C: Curr. Top. Solid State Phys. 3(6), 1811–1814 (2006).
[Crossref]

D. I. Florescu, S. M. Ting, J. C. Ramer, D. S. Lee, V. N. Merai, A. Parkeh, D. Lu, E. A. Armour, and L. Chernyak, “Investigation of V-defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire,” Appl. Phys. Lett. 83(1), 33–35 (2003).
[Crossref]

Miyoshi, T.

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “InGaN-based 518 nm and 488 nm laser diodes on c-plane GaN substrate,” Phys. Status Solidi., A Appl. Mater. Sci. 207(6), 1389–1392 (2010).
[Crossref]

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510-515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[Crossref]

Mukai, T.

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “InGaN-based 518 nm and 488 nm laser diodes on c-plane GaN substrate,” Phys. Status Solidi., A Appl. Mater. Sci. 207(6), 1389–1392 (2010).
[Crossref]

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510-515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[Crossref]

Müller, J.

A. Avramescu, T. Lermer, J. Müller, C. Eichler, G. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss, “True green laser diodes at 524 nm with 50 mW continuous wave output power on c-plane GaN,” Appl. Phys. Express 3(6), 061003 (2010).
[Crossref]

Nagahama, S.

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “InGaN-based 518 nm and 488 nm laser diodes on c-plane GaN substrate,” Phys. Status Solidi., A Appl. Mater. Sci. 207(6), 1389–1392 (2010).
[Crossref]

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510-515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[Crossref]

Naganuma, K.

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

Nakajima, H.

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

Nakamura, S.

C. Y. Huang, M. T. Hardy, K. Fujito, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20-21) InGaN/GaN quantum wells,” Appl. Phys. Lett. 99(24), 241115 (2011).
[Crossref]

Nakamura, T.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar (20-21) free-standing GaN substrate,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Neugebauer, J.

A. I. Duff, L. Lymperakis, and J. Neugebauer, “Understanding and controlling indium incorporation and surface segregation on InxGaN1-xN surfaces: An ab initio approach,” Phys. Rev. B 89(8), 085307 (2014).
[Crossref]

Oehler, F.

F. C.-P. Massabuau, M. J. Davies, F. Oehler, S. K. Pamenter, E. J. Thrush, M. J. Kappers, A. Kovács, T. Williams, M. A. Hopkins, C. J. Humphreys, P. Dawson, R. E. Dunin-Borkowski, J. Etheridge, D. W. E. Allsopp, and R. A. Oliver, “The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem,” Appl. Phys. Lett. 105(11), 112110 (2014).
[Crossref]

Okada, T.

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “InGaN-based 518 nm and 488 nm laser diodes on c-plane GaN substrate,” Phys. Status Solidi., A Appl. Mater. Sci. 207(6), 1389–1392 (2010).
[Crossref]

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510-515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[Crossref]

Oliver, R. A.

F. C.-P. Massabuau, M. J. Davies, F. Oehler, S. K. Pamenter, E. J. Thrush, M. J. Kappers, A. Kovács, T. Williams, M. A. Hopkins, C. J. Humphreys, P. Dawson, R. E. Dunin-Borkowski, J. Etheridge, D. W. E. Allsopp, and R. A. Oliver, “The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem,” Appl. Phys. Lett. 105(11), 112110 (2014).
[Crossref]

F. C.-P. Massabuau, S.-L. Sahonta, L. Trinh-Xuan, S. Rhode, T. J. Puchtler, M. J. Kappers, C. J. Humphreys, and R. A. Oliver, “Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures,” Appl. Phys. Lett. 101(21), 212107 (2012).
[Crossref]

R. A. Oliver, M. J. Kappers, C. J. Humphreys, and G. A. D. Briggs, “Growth modes in heteroepitaxy of InGaN on GaN,” J. Appl. Phys. 97(1), 013707 (2005).
[Crossref]

Pamenter, S. K.

F. C.-P. Massabuau, M. J. Davies, F. Oehler, S. K. Pamenter, E. J. Thrush, M. J. Kappers, A. Kovács, T. Williams, M. A. Hopkins, C. J. Humphreys, P. Dawson, R. E. Dunin-Borkowski, J. Etheridge, D. W. E. Allsopp, and R. A. Oliver, “The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem,” Appl. Phys. Lett. 105(11), 112110 (2014).
[Crossref]

Parekh, A.

D. I. Florescu, S. M. Ting, V. N. Merai, A. Parekh, D. S. Lee, E. A. Armour, and W. E. Quinn, “InGaN quantum well epilayers morphology evolution under a wide range of MOCVD growth parameter sets,” Phys. Status Solidi. C: Curr. Top. Solid State Phys. 3(6), 1811–1814 (2006).
[Crossref]

Park, J. Y.

M. S. Kumar, J. Y. Park, Y. S. Lee, S. J. Chung, C. H. Hong, and E. K. Suh, “Effect of barrier growth temperature on morphological evolution of green InGaN/GaN multi-quantum well heterostructures,” J. Phys. D Appl. Phys. 40(17), 5050–5054 (2007).
[Crossref]

Parkeh, A.

D. I. Florescu, S. M. Ting, J. C. Ramer, D. S. Lee, V. N. Merai, A. Parkeh, D. Lu, E. A. Armour, and L. Chernyak, “Investigation of V-defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire,” Appl. Phys. Lett. 83(1), 33–35 (2003).
[Crossref]

Petroff, P. M.

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
[Crossref]

Ploog, P. K.

J. P. Liu, Y. T. Wang, H. Yang, D. S. Jiang, U. Jahn, and P. K. Ploog, “Investigation on V-defects in quaternary AlInGaN epilayers,” Appl. Phys. Lett. 84(26), 5449–5451 (2004).
[Crossref]

Puchtler, T. J.

F. C.-P. Massabuau, S.-L. Sahonta, L. Trinh-Xuan, S. Rhode, T. J. Puchtler, M. J. Kappers, C. J. Humphreys, and R. A. Oliver, “Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures,” Appl. Phys. Lett. 101(21), 212107 (2012).
[Crossref]

Queren, D.

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94(8), 081119 (2009).
[Crossref]

Quinn, W. E.

D. I. Florescu, S. M. Ting, V. N. Merai, A. Parekh, D. S. Lee, E. A. Armour, and W. E. Quinn, “InGaN quantum well epilayers morphology evolution under a wide range of MOCVD growth parameter sets,” Phys. Status Solidi. C: Curr. Top. Solid State Phys. 3(6), 1811–1814 (2006).
[Crossref]

Ramer, J. C.

D. I. Florescu, S. M. Ting, J. C. Ramer, D. S. Lee, V. N. Merai, A. Parkeh, D. Lu, E. A. Armour, and L. Chernyak, “Investigation of V-defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire,” Appl. Phys. Lett. 83(1), 33–35 (2003).
[Crossref]

Rhode, S.

F. C.-P. Massabuau, S.-L. Sahonta, L. Trinh-Xuan, S. Rhode, T. J. Puchtler, M. J. Kappers, C. J. Humphreys, and R. A. Oliver, “Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures,” Appl. Phys. Lett. 101(21), 212107 (2012).
[Crossref]

Rosner, S. J.

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
[Crossref]

Sabathil, M.

A. Avramescu, T. Lermer, J. Müller, C. Eichler, G. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss, “True green laser diodes at 524 nm with 50 mW continuous wave output power on c-plane GaN,” Appl. Phys. Express 3(6), 061003 (2010).
[Crossref]

Saga, N.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

Sahonta, S.-L.

F. C.-P. Massabuau, S.-L. Sahonta, L. Trinh-Xuan, S. Rhode, T. J. Puchtler, M. J. Kappers, C. J. Humphreys, and R. A. Oliver, “Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures,” Appl. Phys. Lett. 101(21), 212107 (2012).
[Crossref]

Saijo, H.

M. Shiojiri, C. C. Chuo, J. T. Hsu, J. R. Yang, and H. Saijo, “Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers,” J. Appl. Phys. 99(7), 073505 (2006).
[Crossref]

Schillgalies, M.

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94(8), 081119 (2009).
[Crossref]

Shiojiri, M.

M. Shiojiri, C. C. Chuo, J. T. Hsu, J. R. Yang, and H. Saijo, “Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers,” J. Appl. Phys. 99(7), 073505 (2006).
[Crossref]

Sizov, D.

D. Sizov, R. Bhat, A. Heberle, N. Visovsky, and C. Zah, “True-green (11-22) plane optically pumped laser with cleaved m-plane facets,” Appl. Phys. Lett. 99(4), 041117 (2011).
[Crossref]

Speck, J. S.

C. Y. Huang, M. T. Hardy, K. Fujito, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20-21) InGaN/GaN quantum wells,” Appl. Phys. Lett. 99(24), 241115 (2011).
[Crossref]

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
[Crossref]

Strauss, U.

A. Avramescu, T. Lermer, J. Müller, C. Eichler, G. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss, “True green laser diodes at 524 nm with 50 mW continuous wave output power on c-plane GaN,” Appl. Phys. Express 3(6), 061003 (2010).
[Crossref]

Strauß, U.

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94(8), 081119 (2009).
[Crossref]

Stringfellow, G. B.

G. B. Stringfellow, “Microstructures produced during the epitaxial growth of InGaN alloys,” J. Cryst. Growth 312(6), 735–749 (2010).
[Crossref]

Suh, E. K.

M. S. Kumar, J. Y. Park, Y. S. Lee, S. J. Chung, C. H. Hong, and E. K. Suh, “Effect of barrier growth temperature on morphological evolution of green InGaN/GaN multi-quantum well heterostructures,” J. Phys. D Appl. Phys. 40(17), 5050–5054 (2007).
[Crossref]

Sumitomo, T.

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar (20-21) free-standing GaN substrate,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Sumiyoshi, K.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

Takagi, S.

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

Takiguchi, Y.

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

Tasai, K.

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

Thrush, E. J.

F. C.-P. Massabuau, M. J. Davies, F. Oehler, S. K. Pamenter, E. J. Thrush, M. J. Kappers, A. Kovács, T. Williams, M. A. Hopkins, C. J. Humphreys, P. Dawson, R. E. Dunin-Borkowski, J. Etheridge, D. W. E. Allsopp, and R. A. Oliver, “The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem,” Appl. Phys. Lett. 105(11), 112110 (2014).
[Crossref]

Tian, A. Q.

A. Q. Tian, J. P. Liu, M. Ikeda, S. M. Zhang, Z. C. Li, M. X. Feng, K. Zhou, D. Y. Li, L. Q. Zhang, P. Y. Wen, F. Zhang, and H. Yang, “Conductivity enhancement in AlGaN: Mg by suppressing the incorporation of carbon impurity,” Appl. Phys. Express 8(5), 051001 (2015).
[Crossref]

Ting, S. M.

D. I. Florescu, S. M. Ting, V. N. Merai, A. Parekh, D. S. Lee, E. A. Armour, and W. E. Quinn, “InGaN quantum well epilayers morphology evolution under a wide range of MOCVD growth parameter sets,” Phys. Status Solidi. C: Curr. Top. Solid State Phys. 3(6), 1811–1814 (2006).
[Crossref]

D. I. Florescu, S. M. Ting, J. C. Ramer, D. S. Lee, V. N. Merai, A. Parkeh, D. Lu, E. A. Armour, and L. Chernyak, “Investigation of V-defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire,” Appl. Phys. Lett. 83(1), 33–35 (2003).
[Crossref]

Tokuyama, S.

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar (20-21) free-standing GaN substrate,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Trinh-Xuan, L.

F. C.-P. Massabuau, S.-L. Sahonta, L. Trinh-Xuan, S. Rhode, T. J. Puchtler, M. J. Kappers, C. J. Humphreys, and R. A. Oliver, “Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures,” Appl. Phys. Lett. 101(21), 212107 (2012).
[Crossref]

Ueno, M.

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar (20-21) free-standing GaN substrate,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Visovsky, N.

D. Sizov, R. Bhat, A. Heberle, N. Visovsky, and C. Zah, “True-green (11-22) plane optically pumped laser with cleaved m-plane facets,” Appl. Phys. Lett. 99(4), 041117 (2011).
[Crossref]

Wang, H.

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, D. G. Zhao, D. S. Jiang, H. B. Wang, and H. Yang, “Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diodes structures during the epitaxial growth,” Appl. Phys. Lett. 103(15), 152109 (2013).
[Crossref]

Wang, H. B.

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, D. G. Zhao, D. S. Jiang, H. B. Wang, and H. Yang, “Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diodes structures during the epitaxial growth,” Appl. Phys. Lett. 103(15), 152109 (2013).
[Crossref]

Wang, Y. T.

J. P. Liu, Y. T. Wang, H. Yang, D. S. Jiang, U. Jahn, and P. K. Ploog, “Investigation on V-defects in quaternary AlInGaN epilayers,” Appl. Phys. Lett. 84(26), 5449–5451 (2004).
[Crossref]

Wen, P. Y.

A. Q. Tian, J. P. Liu, M. Ikeda, S. M. Zhang, Z. C. Li, M. X. Feng, K. Zhou, D. Y. Li, L. Q. Zhang, P. Y. Wen, F. Zhang, and H. Yang, “Conductivity enhancement in AlGaN: Mg by suppressing the incorporation of carbon impurity,” Appl. Phys. Express 8(5), 051001 (2015).
[Crossref]

Williams, T.

F. C.-P. Massabuau, M. J. Davies, F. Oehler, S. K. Pamenter, E. J. Thrush, M. J. Kappers, A. Kovács, T. Williams, M. A. Hopkins, C. J. Humphreys, P. Dawson, R. E. Dunin-Borkowski, J. Etheridge, D. W. E. Allsopp, and R. A. Oliver, “The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem,” Appl. Phys. Lett. 105(11), 112110 (2014).
[Crossref]

Wu, X. H.

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
[Crossref]

Yamanaka, Y.

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

Yanamoto, T.

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “InGaN-based 518 nm and 488 nm laser diodes on c-plane GaN substrate,” Phys. Status Solidi., A Appl. Mater. Sci. 207(6), 1389–1392 (2010).
[Crossref]

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510-515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[Crossref]

Yanashima, K.

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

Yang, H.

A. Q. Tian, J. P. Liu, M. Ikeda, S. M. Zhang, Z. C. Li, M. X. Feng, K. Zhou, D. Y. Li, L. Q. Zhang, P. Y. Wen, F. Zhang, and H. Yang, “Conductivity enhancement in AlGaN: Mg by suppressing the incorporation of carbon impurity,” Appl. Phys. Express 8(5), 051001 (2015).
[Crossref]

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, D. G. Zhao, D. S. Jiang, H. B. Wang, and H. Yang, “Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diodes structures during the epitaxial growth,” Appl. Phys. Lett. 103(15), 152109 (2013).
[Crossref]

J. P. Liu, Y. T. Wang, H. Yang, D. S. Jiang, U. Jahn, and P. K. Ploog, “Investigation on V-defects in quaternary AlInGaN epilayers,” Appl. Phys. Lett. 84(26), 5449–5451 (2004).
[Crossref]

Yang, J. R.

M. Shiojiri, C. C. Chuo, J. T. Hsu, J. R. Yang, and H. Saijo, “Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers,” J. Appl. Phys. 99(7), 073505 (2006).
[Crossref]

Yoshizumi, Y.

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar (20-21) free-standing GaN substrate,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

Zah, C.

D. Sizov, R. Bhat, A. Heberle, N. Visovsky, and C. Zah, “True-green (11-22) plane optically pumped laser with cleaved m-plane facets,” Appl. Phys. Lett. 99(4), 041117 (2011).
[Crossref]

Zhang, F.

A. Q. Tian, J. P. Liu, M. Ikeda, S. M. Zhang, Z. C. Li, M. X. Feng, K. Zhou, D. Y. Li, L. Q. Zhang, P. Y. Wen, F. Zhang, and H. Yang, “Conductivity enhancement in AlGaN: Mg by suppressing the incorporation of carbon impurity,” Appl. Phys. Express 8(5), 051001 (2015).
[Crossref]

Zhang, L. Q.

A. Q. Tian, J. P. Liu, M. Ikeda, S. M. Zhang, Z. C. Li, M. X. Feng, K. Zhou, D. Y. Li, L. Q. Zhang, P. Y. Wen, F. Zhang, and H. Yang, “Conductivity enhancement in AlGaN: Mg by suppressing the incorporation of carbon impurity,” Appl. Phys. Express 8(5), 051001 (2015).
[Crossref]

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, D. G. Zhao, D. S. Jiang, H. B. Wang, and H. Yang, “Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diodes structures during the epitaxial growth,” Appl. Phys. Lett. 103(15), 152109 (2013).
[Crossref]

Zhang, S. M.

A. Q. Tian, J. P. Liu, M. Ikeda, S. M. Zhang, Z. C. Li, M. X. Feng, K. Zhou, D. Y. Li, L. Q. Zhang, P. Y. Wen, F. Zhang, and H. Yang, “Conductivity enhancement in AlGaN: Mg by suppressing the incorporation of carbon impurity,” Appl. Phys. Express 8(5), 051001 (2015).
[Crossref]

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, D. G. Zhao, D. S. Jiang, H. B. Wang, and H. Yang, “Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diodes structures during the epitaxial growth,” Appl. Phys. Lett. 103(15), 152109 (2013).
[Crossref]

Zhao, D. G.

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, D. G. Zhao, D. S. Jiang, H. B. Wang, and H. Yang, “Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diodes structures during the epitaxial growth,” Appl. Phys. Lett. 103(15), 152109 (2013).
[Crossref]

Zhou, K.

A. Q. Tian, J. P. Liu, M. Ikeda, S. M. Zhang, Z. C. Li, M. X. Feng, K. Zhou, D. Y. Li, L. Q. Zhang, P. Y. Wen, F. Zhang, and H. Yang, “Conductivity enhancement in AlGaN: Mg by suppressing the incorporation of carbon impurity,” Appl. Phys. Express 8(5), 051001 (2015).
[Crossref]

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, D. G. Zhao, D. S. Jiang, H. B. Wang, and H. Yang, “Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diodes structures during the epitaxial growth,” Appl. Phys. Lett. 103(15), 152109 (2013).
[Crossref]

Appl. Phys. Express (6)

A. Avramescu, T. Lermer, J. Müller, C. Eichler, G. Bruederl, M. Sabathil, S. Lutgen, and U. Strauss, “True green laser diodes at 524 nm with 50 mW continuous wave output power on c-plane GaN,” Appl. Phys. Express 3(6), 061003 (2010).
[Crossref]

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510-515 nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[Crossref]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, “531 nm green lasing of InGaN based laser diodes on semi-polar (20-21) free-standing GaN substrate,” Appl. Phys. Express 2, 082101 (2009).
[Crossref]

S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, and M. Ikeda, “High-power (over 100 mW) green laser diodes on semipolar (20-21) GaN substrates operating at wavelength beyond 530 nm,” Appl. Phys. Express 5(8), 082102 (2012).
[Crossref]

K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda, Y. Enya, S. Takagi, M. Adachi, T. Kyono, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, and T. Nakamura, “Long-life true green laser diodes with output power over 50 mW above 525 nm grown on semipolar (2021) GaN substrate,” Appl. Phys. Express 5(8), 082103 (2012).
[Crossref]

A. Q. Tian, J. P. Liu, M. Ikeda, S. M. Zhang, Z. C. Li, M. X. Feng, K. Zhou, D. Y. Li, L. Q. Zhang, P. Y. Wen, F. Zhang, and H. Yang, “Conductivity enhancement in AlGaN: Mg by suppressing the incorporation of carbon impurity,” Appl. Phys. Express 8(5), 051001 (2015).
[Crossref]

Appl. Phys. Lett. (9)

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
[Crossref]

D. I. Florescu, S. M. Ting, J. C. Ramer, D. S. Lee, V. N. Merai, A. Parkeh, D. Lu, E. A. Armour, and L. Chernyak, “Investigation of V-defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire,” Appl. Phys. Lett. 83(1), 33–35 (2003).
[Crossref]

D. Sizov, R. Bhat, A. Heberle, N. Visovsky, and C. Zah, “True-green (11-22) plane optically pumped laser with cleaved m-plane facets,” Appl. Phys. Lett. 99(4), 041117 (2011).
[Crossref]

C. Y. Huang, M. T. Hardy, K. Fujito, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20-21) InGaN/GaN quantum wells,” Appl. Phys. Lett. 99(24), 241115 (2011).
[Crossref]

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, “500 nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94(8), 081119 (2009).
[Crossref]

F. C.-P. Massabuau, M. J. Davies, F. Oehler, S. K. Pamenter, E. J. Thrush, M. J. Kappers, A. Kovács, T. Williams, M. A. Hopkins, C. J. Humphreys, P. Dawson, R. E. Dunin-Borkowski, J. Etheridge, D. W. E. Allsopp, and R. A. Oliver, “The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem,” Appl. Phys. Lett. 105(11), 112110 (2014).
[Crossref]

F. C.-P. Massabuau, S.-L. Sahonta, L. Trinh-Xuan, S. Rhode, T. J. Puchtler, M. J. Kappers, C. J. Humphreys, and R. A. Oliver, “Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures,” Appl. Phys. Lett. 101(21), 212107 (2012).
[Crossref]

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, D. G. Zhao, D. S. Jiang, H. B. Wang, and H. Yang, “Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diodes structures during the epitaxial growth,” Appl. Phys. Lett. 103(15), 152109 (2013).
[Crossref]

J. P. Liu, Y. T. Wang, H. Yang, D. S. Jiang, U. Jahn, and P. K. Ploog, “Investigation on V-defects in quaternary AlInGaN epilayers,” Appl. Phys. Lett. 84(26), 5449–5451 (2004).
[Crossref]

J. Appl. Phys. (2)

M. Shiojiri, C. C. Chuo, J. T. Hsu, J. R. Yang, and H. Saijo, “Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers,” J. Appl. Phys. 99(7), 073505 (2006).
[Crossref]

R. A. Oliver, M. J. Kappers, C. J. Humphreys, and G. A. D. Briggs, “Growth modes in heteroepitaxy of InGaN on GaN,” J. Appl. Phys. 97(1), 013707 (2005).
[Crossref]

J. Cryst. Growth (1)

G. B. Stringfellow, “Microstructures produced during the epitaxial growth of InGaN alloys,” J. Cryst. Growth 312(6), 735–749 (2010).
[Crossref]

J. Phys. D Appl. Phys. (1)

M. S. Kumar, J. Y. Park, Y. S. Lee, S. J. Chung, C. H. Hong, and E. K. Suh, “Effect of barrier growth temperature on morphological evolution of green InGaN/GaN multi-quantum well heterostructures,” J. Phys. D Appl. Phys. 40(17), 5050–5054 (2007).
[Crossref]

Phys. Rev. B (1)

A. I. Duff, L. Lymperakis, and J. Neugebauer, “Understanding and controlling indium incorporation and surface segregation on InxGaN1-xN surfaces: An ab initio approach,” Phys. Rev. B 89(8), 085307 (2014).
[Crossref]

Phys. Status Solidi. C: Curr. Top. Solid State Phys. (1)

D. I. Florescu, S. M. Ting, V. N. Merai, A. Parekh, D. S. Lee, E. A. Armour, and W. E. Quinn, “InGaN quantum well epilayers morphology evolution under a wide range of MOCVD growth parameter sets,” Phys. Status Solidi. C: Curr. Top. Solid State Phys. 3(6), 1811–1814 (2006).
[Crossref]

Phys. Status Solidi., A Appl. Mater. Sci. (1)

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “InGaN-based 518 nm and 488 nm laser diodes on c-plane GaN substrate,” Phys. Status Solidi., A Appl. Mater. Sci. 207(6), 1389–1392 (2010).
[Crossref]

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Figures (5)

Fig. 1
Fig. 1 AFM images of (a) GaN/Sapphire template, (b) green InGaN QW. (c) is the AFM line profile of green InGaN QW along the white line shown in (b). AFM images of (d) 1 nm GaN cap layer with green InGaN QW underneath, (e) 4 nm GaN cap layer with green InGaN QW underneath, (f) 1 nm GaN cap layer directly grown on GaN/Sapphire template.
Fig. 2
Fig. 2 (a) PL spectra of green InGaN/GaN QWs with and without GaN cap layer, (b) AFM images of 15 nm QB layers grown on GaN/sapphire template, (c) EL FWHMs dependent on emission energy of LD groups with 1.2 nm and 1.8 nm GaN cap layer, (d) PL spectra of green InGaN/GaN QW with 1.2 nm and 1.8 nm GaN cap layer.
Fig. 3
Fig. 3 AFM, SEM and CL images of annealed GaN cap layer with InGaN quantum well underneath grown on GaN/sapphire template.
Fig. 4
Fig. 4 AFM, SEM and CL images of annealed GaN cap layer with InGaN quantum well underneath grown on free-standing GaN substrate.
Fig. 5
Fig. 5 (a) Emission spectra at different current density, (b) Power-current-voltage curve of a typical green laser diode under continuous-wave operation at room temperature.

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