Abstract

A compact (1.2 mm2) fully integrated mid-IR spectrometer operating in the 3 μm wavelength range is presented. To our knowledge this is the longest wavelength integrated spectrometer operating in the important wavelength window for spectroscopy of organic compounds. The spectrometer is based on a silicon-on-insulator arrayed waveguide grating filter. An array of InAs0.91Sb0.09 p-i-n photodiodes is heterogeneously integrated on the spectrometers output grating couplers using adhesive bonding. The spectrometer insertion loss is less than 3 dB and the waveguide-referred responsivity of the integrated photodiodes at room temperature is 0.3 A/W.

© 2016 Optical Society of America

Full Article  |  PDF Article
OSA Recommended Articles
III-V-on-silicon 2-µm-wavelength-range wavelength demultiplexers with heterogeneously integrated InP-based type-II photodetectors

Ruijun Wang, Muhammad Muneeb, Stephan Sprengel, Gerhard Boehm, Aditya Malik, Roel Baets, Markus-Christian Amann, and Gunther Roelkens
Opt. Express 24(8) 8480-8490 (2016)

Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J.B. Rodriguez, E. Tournié, W. Bogaerts, R. Baets, and G. Roelkens
Opt. Express 21(5) 6101-6108 (2013)

2.3 µm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit

Ruijun Wang, Stephan Sprengel, Gerhard Boehm, Muhammad Muneeb, Roel Baets, Markus-Christian Amann, and Gunther Roelkens
Opt. Express 24(18) 21081-21089 (2016)

References

  • View by:
  • |
  • |
  • |

  1. G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
    [Crossref]
  2. J. G. Crowder, S. D. Smith, A. Vass, and J. Keddie, “Infrared methods for gas detection,” in Mid-Infrared Semiconductor Optoelectronics (Springer, 2006).
    [Crossref]
  3. J. Abell, C. S. Kim, W. W. Bewley, C. D. Merritt, C. L. Canedy, I. Vurgaftman, J. R. Meyer, and M. Kim, “Mid-infrared interband cascade light emitting devices with milliwatt output powers at room temperature,” Appl. Phys. Lett. 104, 261103 (2014).
    [Crossref]
  4. Y. Mao and A. Krier, “Uncooled 4.2 μ m light emitting diodes based on InAs0.91Sb0.09 GaSb grown by LPE,” Optical Materials 6, 55–61 (1996).
    [Crossref]
  5. M. Carras, C. Renard, X. Marcadet, J. L. Reverchon, B. Vinter, and V. Berger, “Generation-recombination reduction in InAsSb photodiodes,” Semicond. Sci. Technol. 21, 1720–1723 (2006).
    [Crossref]
  6. S. Maimon and G. W. Wicks, “nBn detector, an infrared detector with reduced dark current and higher operating temperature,” Appl. Phys. Lett. 89, 151109 (2006).
    [Crossref]
  7. H. Ait-Kaci, J. Nieto, J. B. Rodriguez, P. Grech, F. Chevrier, A. Salesse, A. Joulli, and P. Christol, “Optimization of InAsSb photodetector for non-cryogenic operation in the mid-infrared range,” phys. stat. sol. (a) 202,  4, 647–651 (2005).
    [Crossref]
  8. W. Bogaerts, S. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-Insulator Spectral Filters Fabricated with CMOS Technology,” J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
    [Crossref]
  9. E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J-B Rodriguez, E. Tournie, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300nm,” Opt. Express 21(5), 6101–6108 (2013).
    [Crossref] [PubMed]
  10. M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E.M.P. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Mashanovich, and G. Roelkens, “Demonstration of silicon on insulator mid-infrared spectrometers operating at 3.8 um,” Opt. Express 21(10), 11659–11669 (2013).
    [Crossref] [PubMed]
  11. M. Nedeljkovic, A.V. Velasco, A.Z. Khokhar, A. Delage, P. Cheben, and G.Z. Mashanovich, “Mid-Infrared Silicon-on-Insulator Fourier-Transform Spectrometer Chip,” IEEE Phot. Techn. Lett. 28(4), 528–531, (2016).
    [Crossref]
  12. M. Muneeb, A. Ruocco, A. Malik, S. Pathak, E.M.P. Ryckeboer, D. Sanchez, L. Cerutti, J.B. Rodriguez, E. Tournie, W. Bogaerts, M. Smit, and G. Roelkens, “Silicon-on-insulator shortwave infrared wavelength meter with integrated photodiodes for on-chip laser monitoring,” Opt. Express 22(22), 27300–27308 (2014).
    [Crossref] [PubMed]
  13. N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tourni, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Phot. Techn. Lett. 231760 (2011).
    [Crossref]
  14. A. Gassenq, N. Hattasan, E.M.P. Ryckeboer, J.B. Rodriguez, L. Cerutti, E. Tourni, and G. Roelkens, “Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip,” Opt. Express 20(11), 11665–11672 (2012).
    [Crossref] [PubMed]
  15. T. Stark, M. Imboden, S. Kaya, A. Mertiri, J. Chang, S. Erramilli, and D. Bishop, “MEMS Tunable Mid-Infrared Plasmonic Spectrometer,” ACS Photonics 6(1), 14–19 (2016).
    [Crossref]
  16. P. Larkin, Infrared and Raman Spectroscopy; Principles and Spectral Interpretation (Elsevier, 2011).
  17. S. Seifert and P. Runge, “Revised refractive index and absorption of In1-xGaxAsyP1-y lattice-matched to InP in transparent and absorption IR-region,” Opt. Mater. Express 6(2), 251691 (2016).
    [Crossref]
  18. W. S. Zaoui, M. F. Rosa, W. Vogel, M. Berroth, J. Butschke, and F. Letzkus, “Cost-effective CMOS-compatible grating couplers with backside metal mirror and 69 % coupling efficiency,” Opt. Express 20, (26)238–243 (2012).
    [Crossref] [PubMed]

2016 (3)

M. Nedeljkovic, A.V. Velasco, A.Z. Khokhar, A. Delage, P. Cheben, and G.Z. Mashanovich, “Mid-Infrared Silicon-on-Insulator Fourier-Transform Spectrometer Chip,” IEEE Phot. Techn. Lett. 28(4), 528–531, (2016).
[Crossref]

T. Stark, M. Imboden, S. Kaya, A. Mertiri, J. Chang, S. Erramilli, and D. Bishop, “MEMS Tunable Mid-Infrared Plasmonic Spectrometer,” ACS Photonics 6(1), 14–19 (2016).
[Crossref]

S. Seifert and P. Runge, “Revised refractive index and absorption of In1-xGaxAsyP1-y lattice-matched to InP in transparent and absorption IR-region,” Opt. Mater. Express 6(2), 251691 (2016).
[Crossref]

2014 (3)

M. Muneeb, A. Ruocco, A. Malik, S. Pathak, E.M.P. Ryckeboer, D. Sanchez, L. Cerutti, J.B. Rodriguez, E. Tournie, W. Bogaerts, M. Smit, and G. Roelkens, “Silicon-on-insulator shortwave infrared wavelength meter with integrated photodiodes for on-chip laser monitoring,” Opt. Express 22(22), 27300–27308 (2014).
[Crossref] [PubMed]

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

J. Abell, C. S. Kim, W. W. Bewley, C. D. Merritt, C. L. Canedy, I. Vurgaftman, J. R. Meyer, and M. Kim, “Mid-infrared interband cascade light emitting devices with milliwatt output powers at room temperature,” Appl. Phys. Lett. 104, 261103 (2014).
[Crossref]

2013 (2)

2012 (2)

W. S. Zaoui, M. F. Rosa, W. Vogel, M. Berroth, J. Butschke, and F. Letzkus, “Cost-effective CMOS-compatible grating couplers with backside metal mirror and 69 % coupling efficiency,” Opt. Express 20, (26)238–243 (2012).
[Crossref] [PubMed]

A. Gassenq, N. Hattasan, E.M.P. Ryckeboer, J.B. Rodriguez, L. Cerutti, E. Tourni, and G. Roelkens, “Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip,” Opt. Express 20(11), 11665–11672 (2012).
[Crossref] [PubMed]

2011 (1)

N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tourni, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Phot. Techn. Lett. 231760 (2011).
[Crossref]

2010 (1)

W. Bogaerts, S. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-Insulator Spectral Filters Fabricated with CMOS Technology,” J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

2006 (2)

M. Carras, C. Renard, X. Marcadet, J. L. Reverchon, B. Vinter, and V. Berger, “Generation-recombination reduction in InAsSb photodiodes,” Semicond. Sci. Technol. 21, 1720–1723 (2006).
[Crossref]

S. Maimon and G. W. Wicks, “nBn detector, an infrared detector with reduced dark current and higher operating temperature,” Appl. Phys. Lett. 89, 151109 (2006).
[Crossref]

2005 (1)

H. Ait-Kaci, J. Nieto, J. B. Rodriguez, P. Grech, F. Chevrier, A. Salesse, A. Joulli, and P. Christol, “Optimization of InAsSb photodetector for non-cryogenic operation in the mid-infrared range,” phys. stat. sol. (a) 202,  4, 647–651 (2005).
[Crossref]

1996 (1)

Y. Mao and A. Krier, “Uncooled 4.2 μ m light emitting diodes based on InAs0.91Sb0.09 GaSb grown by LPE,” Optical Materials 6, 55–61 (1996).
[Crossref]

Abell, J.

J. Abell, C. S. Kim, W. W. Bewley, C. D. Merritt, C. L. Canedy, I. Vurgaftman, J. R. Meyer, and M. Kim, “Mid-infrared interband cascade light emitting devices with milliwatt output powers at room temperature,” Appl. Phys. Lett. 104, 261103 (2014).
[Crossref]

Ait-Kaci, H.

H. Ait-Kaci, J. Nieto, J. B. Rodriguez, P. Grech, F. Chevrier, A. Salesse, A. Joulli, and P. Christol, “Optimization of InAsSb photodetector for non-cryogenic operation in the mid-infrared range,” phys. stat. sol. (a) 202,  4, 647–651 (2005).
[Crossref]

Baets, R.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J-B Rodriguez, E. Tournie, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

W. Bogaerts, S. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-Insulator Spectral Filters Fabricated with CMOS Technology,” J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

Berger, V.

M. Carras, C. Renard, X. Marcadet, J. L. Reverchon, B. Vinter, and V. Berger, “Generation-recombination reduction in InAsSb photodiodes,” Semicond. Sci. Technol. 21, 1720–1723 (2006).
[Crossref]

Berroth, M.

W. S. Zaoui, M. F. Rosa, W. Vogel, M. Berroth, J. Butschke, and F. Letzkus, “Cost-effective CMOS-compatible grating couplers with backside metal mirror and 69 % coupling efficiency,” Opt. Express 20, (26)238–243 (2012).
[Crossref] [PubMed]

Bewley, W. W.

J. Abell, C. S. Kim, W. W. Bewley, C. D. Merritt, C. L. Canedy, I. Vurgaftman, J. R. Meyer, and M. Kim, “Mid-infrared interband cascade light emitting devices with milliwatt output powers at room temperature,” Appl. Phys. Lett. 104, 261103 (2014).
[Crossref]

Bishop, D.

T. Stark, M. Imboden, S. Kaya, A. Mertiri, J. Chang, S. Erramilli, and D. Bishop, “MEMS Tunable Mid-Infrared Plasmonic Spectrometer,” ACS Photonics 6(1), 14–19 (2016).
[Crossref]

Bogaerts, W.

Brouckaert, J.

W. Bogaerts, S. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-Insulator Spectral Filters Fabricated with CMOS Technology,” J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

Butschke, J.

W. S. Zaoui, M. F. Rosa, W. Vogel, M. Berroth, J. Butschke, and F. Letzkus, “Cost-effective CMOS-compatible grating couplers with backside metal mirror and 69 % coupling efficiency,” Opt. Express 20, (26)238–243 (2012).
[Crossref] [PubMed]

Canedy, C. L.

J. Abell, C. S. Kim, W. W. Bewley, C. D. Merritt, C. L. Canedy, I. Vurgaftman, J. R. Meyer, and M. Kim, “Mid-infrared interband cascade light emitting devices with milliwatt output powers at room temperature,” Appl. Phys. Lett. 104, 261103 (2014).
[Crossref]

Carras, M.

M. Carras, C. Renard, X. Marcadet, J. L. Reverchon, B. Vinter, and V. Berger, “Generation-recombination reduction in InAsSb photodiodes,” Semicond. Sci. Technol. 21, 1720–1723 (2006).
[Crossref]

Cerutti, L.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

M. Muneeb, A. Ruocco, A. Malik, S. Pathak, E.M.P. Ryckeboer, D. Sanchez, L. Cerutti, J.B. Rodriguez, E. Tournie, W. Bogaerts, M. Smit, and G. Roelkens, “Silicon-on-insulator shortwave infrared wavelength meter with integrated photodiodes for on-chip laser monitoring,” Opt. Express 22(22), 27300–27308 (2014).
[Crossref] [PubMed]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J-B Rodriguez, E. Tournie, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

A. Gassenq, N. Hattasan, E.M.P. Ryckeboer, J.B. Rodriguez, L. Cerutti, E. Tourni, and G. Roelkens, “Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip,” Opt. Express 20(11), 11665–11672 (2012).
[Crossref] [PubMed]

N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tourni, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Phot. Techn. Lett. 231760 (2011).
[Crossref]

Chang, J.

T. Stark, M. Imboden, S. Kaya, A. Mertiri, J. Chang, S. Erramilli, and D. Bishop, “MEMS Tunable Mid-Infrared Plasmonic Spectrometer,” ACS Photonics 6(1), 14–19 (2016).
[Crossref]

Cheben, P.

M. Nedeljkovic, A.V. Velasco, A.Z. Khokhar, A. Delage, P. Cheben, and G.Z. Mashanovich, “Mid-Infrared Silicon-on-Insulator Fourier-Transform Spectrometer Chip,” IEEE Phot. Techn. Lett. 28(4), 528–531, (2016).
[Crossref]

Chen, X.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E.M.P. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Mashanovich, and G. Roelkens, “Demonstration of silicon on insulator mid-infrared spectrometers operating at 3.8 um,” Opt. Express 21(10), 11659–11669 (2013).
[Crossref] [PubMed]

Chevrier, F.

H. Ait-Kaci, J. Nieto, J. B. Rodriguez, P. Grech, F. Chevrier, A. Salesse, A. Joulli, and P. Christol, “Optimization of InAsSb photodetector for non-cryogenic operation in the mid-infrared range,” phys. stat. sol. (a) 202,  4, 647–651 (2005).
[Crossref]

Christol, P.

H. Ait-Kaci, J. Nieto, J. B. Rodriguez, P. Grech, F. Chevrier, A. Salesse, A. Joulli, and P. Christol, “Optimization of InAsSb photodetector for non-cryogenic operation in the mid-infrared range,” phys. stat. sol. (a) 202,  4, 647–651 (2005).
[Crossref]

Crowder, J. G.

J. G. Crowder, S. D. Smith, A. Vass, and J. Keddie, “Infrared methods for gas detection,” in Mid-Infrared Semiconductor Optoelectronics (Springer, 2006).
[Crossref]

Dave, U.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

De Vos, K.

W. Bogaerts, S. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-Insulator Spectral Filters Fabricated with CMOS Technology,” J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

Delage, A.

M. Nedeljkovic, A.V. Velasco, A.Z. Khokhar, A. Delage, P. Cheben, and G.Z. Mashanovich, “Mid-Infrared Silicon-on-Insulator Fourier-Transform Spectrometer Chip,” IEEE Phot. Techn. Lett. 28(4), 528–531, (2016).
[Crossref]

Dumon, P.

W. Bogaerts, S. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-Insulator Spectral Filters Fabricated with CMOS Technology,” J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

Erramilli, S.

T. Stark, M. Imboden, S. Kaya, A. Mertiri, J. Chang, S. Erramilli, and D. Bishop, “MEMS Tunable Mid-Infrared Plasmonic Spectrometer,” ACS Photonics 6(1), 14–19 (2016).
[Crossref]

Gassenq, A.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J-B Rodriguez, E. Tournie, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

A. Gassenq, N. Hattasan, E.M.P. Ryckeboer, J.B. Rodriguez, L. Cerutti, E. Tourni, and G. Roelkens, “Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip,” Opt. Express 20(11), 11665–11672 (2012).
[Crossref] [PubMed]

N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tourni, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Phot. Techn. Lett. 231760 (2011).
[Crossref]

Gencarelli, F.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Grech, P.

H. Ait-Kaci, J. Nieto, J. B. Rodriguez, P. Grech, F. Chevrier, A. Salesse, A. Joulli, and P. Christol, “Optimization of InAsSb photodetector for non-cryogenic operation in the mid-infrared range,” phys. stat. sol. (a) 202,  4, 647–651 (2005).
[Crossref]

Green, W.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Hattasan, N.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J-B Rodriguez, E. Tournie, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

A. Gassenq, N. Hattasan, E.M.P. Ryckeboer, J.B. Rodriguez, L. Cerutti, E. Tourni, and G. Roelkens, “Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip,” Opt. Express 20(11), 11665–11672 (2012).
[Crossref] [PubMed]

N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tourni, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Phot. Techn. Lett. 231760 (2011).
[Crossref]

Healy, N.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Hens, Z.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Hu, C.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Imboden, M.

T. Stark, M. Imboden, S. Kaya, A. Mertiri, J. Chang, S. Erramilli, and D. Bishop, “MEMS Tunable Mid-Infrared Plasmonic Spectrometer,” ACS Photonics 6(1), 14–19 (2016).
[Crossref]

Joulli, A.

H. Ait-Kaci, J. Nieto, J. B. Rodriguez, P. Grech, F. Chevrier, A. Salesse, A. Joulli, and P. Christol, “Optimization of InAsSb photodetector for non-cryogenic operation in the mid-infrared range,” phys. stat. sol. (a) 202,  4, 647–651 (2005).
[Crossref]

Kaya, S.

T. Stark, M. Imboden, S. Kaya, A. Mertiri, J. Chang, S. Erramilli, and D. Bishop, “MEMS Tunable Mid-Infrared Plasmonic Spectrometer,” ACS Photonics 6(1), 14–19 (2016).
[Crossref]

Keddie, J.

J. G. Crowder, S. D. Smith, A. Vass, and J. Keddie, “Infrared methods for gas detection,” in Mid-Infrared Semiconductor Optoelectronics (Springer, 2006).
[Crossref]

Khokhar, A.Z.

M. Nedeljkovic, A.V. Velasco, A.Z. Khokhar, A. Delage, P. Cheben, and G.Z. Mashanovich, “Mid-Infrared Silicon-on-Insulator Fourier-Transform Spectrometer Chip,” IEEE Phot. Techn. Lett. 28(4), 528–531, (2016).
[Crossref]

Kim, C. S.

J. Abell, C. S. Kim, W. W. Bewley, C. D. Merritt, C. L. Canedy, I. Vurgaftman, J. R. Meyer, and M. Kim, “Mid-infrared interband cascade light emitting devices with milliwatt output powers at room temperature,” Appl. Phys. Lett. 104, 261103 (2014).
[Crossref]

Kim, M.

J. Abell, C. S. Kim, W. W. Bewley, C. D. Merritt, C. L. Canedy, I. Vurgaftman, J. R. Meyer, and M. Kim, “Mid-infrared interband cascade light emitting devices with milliwatt output powers at room temperature,” Appl. Phys. Lett. 104, 261103 (2014).
[Crossref]

Krier, A.

Y. Mao and A. Krier, “Uncooled 4.2 μ m light emitting diodes based on InAs0.91Sb0.09 GaSb grown by LPE,” Optical Materials 6, 55–61 (1996).
[Crossref]

Kuyken, B.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E.M.P. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Mashanovich, and G. Roelkens, “Demonstration of silicon on insulator mid-infrared spectrometers operating at 3.8 um,” Opt. Express 21(10), 11659–11669 (2013).
[Crossref] [PubMed]

Larkin, P.

P. Larkin, Infrared and Raman Spectroscopy; Principles and Spectral Interpretation (Elsevier, 2011).

Leo, F.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Lepage, G.

Letzkus, F.

W. S. Zaoui, M. F. Rosa, W. Vogel, M. Berroth, J. Butschke, and F. Letzkus, “Cost-effective CMOS-compatible grating couplers with backside metal mirror and 69 % coupling efficiency,” Opt. Express 20, (26)238–243 (2012).
[Crossref] [PubMed]

Liu, X.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Loo, R.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Maimon, S.

S. Maimon and G. W. Wicks, “nBn detector, an infrared detector with reduced dark current and higher operating temperature,” Appl. Phys. Lett. 89, 151109 (2006).
[Crossref]

Malik, A.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

M. Muneeb, A. Ruocco, A. Malik, S. Pathak, E.M.P. Ryckeboer, D. Sanchez, L. Cerutti, J.B. Rodriguez, E. Tournie, W. Bogaerts, M. Smit, and G. Roelkens, “Silicon-on-insulator shortwave infrared wavelength meter with integrated photodiodes for on-chip laser monitoring,” Opt. Express 22(22), 27300–27308 (2014).
[Crossref] [PubMed]

M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E.M.P. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Mashanovich, and G. Roelkens, “Demonstration of silicon on insulator mid-infrared spectrometers operating at 3.8 um,” Opt. Express 21(10), 11659–11669 (2013).
[Crossref] [PubMed]

Mao, Y.

Y. Mao and A. Krier, “Uncooled 4.2 μ m light emitting diodes based on InAs0.91Sb0.09 GaSb grown by LPE,” Optical Materials 6, 55–61 (1996).
[Crossref]

Marcadet, X.

M. Carras, C. Renard, X. Marcadet, J. L. Reverchon, B. Vinter, and V. Berger, “Generation-recombination reduction in InAsSb photodiodes,” Semicond. Sci. Technol. 21, 1720–1723 (2006).
[Crossref]

Mashanovich, G.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E.M.P. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Mashanovich, and G. Roelkens, “Demonstration of silicon on insulator mid-infrared spectrometers operating at 3.8 um,” Opt. Express 21(10), 11659–11669 (2013).
[Crossref] [PubMed]

Mashanovich, G.Z.

M. Nedeljkovic, A.V. Velasco, A.Z. Khokhar, A. Delage, P. Cheben, and G.Z. Mashanovich, “Mid-Infrared Silicon-on-Insulator Fourier-Transform Spectrometer Chip,” IEEE Phot. Techn. Lett. 28(4), 528–531, (2016).
[Crossref]

Merritt, C. D.

J. Abell, C. S. Kim, W. W. Bewley, C. D. Merritt, C. L. Canedy, I. Vurgaftman, J. R. Meyer, and M. Kim, “Mid-infrared interband cascade light emitting devices with milliwatt output powers at room temperature,” Appl. Phys. Lett. 104, 261103 (2014).
[Crossref]

Mertiri, A.

T. Stark, M. Imboden, S. Kaya, A. Mertiri, J. Chang, S. Erramilli, and D. Bishop, “MEMS Tunable Mid-Infrared Plasmonic Spectrometer,” ACS Photonics 6(1), 14–19 (2016).
[Crossref]

Meyer, J. R.

J. Abell, C. S. Kim, W. W. Bewley, C. D. Merritt, C. L. Canedy, I. Vurgaftman, J. R. Meyer, and M. Kim, “Mid-infrared interband cascade light emitting devices with milliwatt output powers at room temperature,” Appl. Phys. Lett. 104, 261103 (2014).
[Crossref]

Muneeb, M.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

M. Muneeb, A. Ruocco, A. Malik, S. Pathak, E.M.P. Ryckeboer, D. Sanchez, L. Cerutti, J.B. Rodriguez, E. Tournie, W. Bogaerts, M. Smit, and G. Roelkens, “Silicon-on-insulator shortwave infrared wavelength meter with integrated photodiodes for on-chip laser monitoring,” Opt. Express 22(22), 27300–27308 (2014).
[Crossref] [PubMed]

M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E.M.P. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Mashanovich, and G. Roelkens, “Demonstration of silicon on insulator mid-infrared spectrometers operating at 3.8 um,” Opt. Express 21(10), 11659–11669 (2013).
[Crossref] [PubMed]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J-B Rodriguez, E. Tournie, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

Nedeljkovic, M.

M. Nedeljkovic, A.V. Velasco, A.Z. Khokhar, A. Delage, P. Cheben, and G.Z. Mashanovich, “Mid-Infrared Silicon-on-Insulator Fourier-Transform Spectrometer Chip,” IEEE Phot. Techn. Lett. 28(4), 528–531, (2016).
[Crossref]

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E.M.P. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Mashanovich, and G. Roelkens, “Demonstration of silicon on insulator mid-infrared spectrometers operating at 3.8 um,” Opt. Express 21(10), 11659–11669 (2013).
[Crossref] [PubMed]

Nieto, J.

H. Ait-Kaci, J. Nieto, J. B. Rodriguez, P. Grech, F. Chevrier, A. Salesse, A. Joulli, and P. Christol, “Optimization of InAsSb photodetector for non-cryogenic operation in the mid-infrared range,” phys. stat. sol. (a) 202,  4, 647–651 (2005).
[Crossref]

Osgood, R.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Pathak, S.

Peacock, A. C.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Renard, C.

M. Carras, C. Renard, X. Marcadet, J. L. Reverchon, B. Vinter, and V. Berger, “Generation-recombination reduction in InAsSb photodiodes,” Semicond. Sci. Technol. 21, 1720–1723 (2006).
[Crossref]

Reverchon, J. L.

M. Carras, C. Renard, X. Marcadet, J. L. Reverchon, B. Vinter, and V. Berger, “Generation-recombination reduction in InAsSb photodiodes,” Semicond. Sci. Technol. 21, 1720–1723 (2006).
[Crossref]

Rodriguez, J. B.

N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tourni, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Phot. Techn. Lett. 231760 (2011).
[Crossref]

H. Ait-Kaci, J. Nieto, J. B. Rodriguez, P. Grech, F. Chevrier, A. Salesse, A. Joulli, and P. Christol, “Optimization of InAsSb photodetector for non-cryogenic operation in the mid-infrared range,” phys. stat. sol. (a) 202,  4, 647–651 (2005).
[Crossref]

Rodriguez, J.B.

Rodriguez, J-B

Rodriguez, Jean-Baptiste

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Roelkens, G.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

M. Muneeb, A. Ruocco, A. Malik, S. Pathak, E.M.P. Ryckeboer, D. Sanchez, L. Cerutti, J.B. Rodriguez, E. Tournie, W. Bogaerts, M. Smit, and G. Roelkens, “Silicon-on-insulator shortwave infrared wavelength meter with integrated photodiodes for on-chip laser monitoring,” Opt. Express 22(22), 27300–27308 (2014).
[Crossref] [PubMed]

M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E.M.P. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Mashanovich, and G. Roelkens, “Demonstration of silicon on insulator mid-infrared spectrometers operating at 3.8 um,” Opt. Express 21(10), 11659–11669 (2013).
[Crossref] [PubMed]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J-B Rodriguez, E. Tournie, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

A. Gassenq, N. Hattasan, E.M.P. Ryckeboer, J.B. Rodriguez, L. Cerutti, E. Tourni, and G. Roelkens, “Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip,” Opt. Express 20(11), 11665–11672 (2012).
[Crossref] [PubMed]

N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tourni, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Phot. Techn. Lett. 231760 (2011).
[Crossref]

Rosa, M. F.

W. S. Zaoui, M. F. Rosa, W. Vogel, M. Berroth, J. Butschke, and F. Letzkus, “Cost-effective CMOS-compatible grating couplers with backside metal mirror and 69 % coupling efficiency,” Opt. Express 20, (26)238–243 (2012).
[Crossref] [PubMed]

Runge, P.

S. Seifert and P. Runge, “Revised refractive index and absorption of In1-xGaxAsyP1-y lattice-matched to InP in transparent and absorption IR-region,” Opt. Mater. Express 6(2), 251691 (2016).
[Crossref]

Ruocco, A.

Ryckeboer, E.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J-B Rodriguez, E. Tournie, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

Ryckeboer, E.M.P.

Salesse, A.

H. Ait-Kaci, J. Nieto, J. B. Rodriguez, P. Grech, F. Chevrier, A. Salesse, A. Joulli, and P. Christol, “Optimization of InAsSb photodetector for non-cryogenic operation in the mid-infrared range,” phys. stat. sol. (a) 202,  4, 647–651 (2005).
[Crossref]

Sanchez, D.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

M. Muneeb, A. Ruocco, A. Malik, S. Pathak, E.M.P. Ryckeboer, D. Sanchez, L. Cerutti, J.B. Rodriguez, E. Tournie, W. Bogaerts, M. Smit, and G. Roelkens, “Silicon-on-insulator shortwave infrared wavelength meter with integrated photodiodes for on-chip laser monitoring,” Opt. Express 22(22), 27300–27308 (2014).
[Crossref] [PubMed]

Seifert, S.

S. Seifert and P. Runge, “Revised refractive index and absorption of In1-xGaxAsyP1-y lattice-matched to InP in transparent and absorption IR-region,” Opt. Mater. Express 6(2), 251691 (2016).
[Crossref]

Selvaraja, S.

W. Bogaerts, S. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-Insulator Spectral Filters Fabricated with CMOS Technology,” J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

Shen, L.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Shimura, Y.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Smit, M.

Smith, S. D.

J. G. Crowder, S. D. Smith, A. Vass, and J. Keddie, “Infrared methods for gas detection,” in Mid-Infrared Semiconductor Optoelectronics (Springer, 2006).
[Crossref]

Stark, T.

T. Stark, M. Imboden, S. Kaya, A. Mertiri, J. Chang, S. Erramilli, and D. Bishop, “MEMS Tunable Mid-Infrared Plasmonic Spectrometer,” ACS Photonics 6(1), 14–19 (2016).
[Crossref]

Tourni, E.

A. Gassenq, N. Hattasan, E.M.P. Ryckeboer, J.B. Rodriguez, L. Cerutti, E. Tourni, and G. Roelkens, “Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip,” Opt. Express 20(11), 11665–11672 (2012).
[Crossref] [PubMed]

N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tourni, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Phot. Techn. Lett. 231760 (2011).
[Crossref]

Tournie, E.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

M. Muneeb, A. Ruocco, A. Malik, S. Pathak, E.M.P. Ryckeboer, D. Sanchez, L. Cerutti, J.B. Rodriguez, E. Tournie, W. Bogaerts, M. Smit, and G. Roelkens, “Silicon-on-insulator shortwave infrared wavelength meter with integrated photodiodes for on-chip laser monitoring,” Opt. Express 22(22), 27300–27308 (2014).
[Crossref] [PubMed]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J-B Rodriguez, E. Tournie, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

Uvin, S.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Van Campenhout, J.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E.M.P. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Mashanovich, and G. Roelkens, “Demonstration of silicon on insulator mid-infrared spectrometers operating at 3.8 um,” Opt. Express 21(10), 11659–11669 (2013).
[Crossref] [PubMed]

Van Thourhout, D.

W. Bogaerts, S. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-Insulator Spectral Filters Fabricated with CMOS Technology,” J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

Vass, A.

J. G. Crowder, S. D. Smith, A. Vass, and J. Keddie, “Infrared methods for gas detection,” in Mid-Infrared Semiconductor Optoelectronics (Springer, 2006).
[Crossref]

Velasco, A.V.

M. Nedeljkovic, A.V. Velasco, A.Z. Khokhar, A. Delage, P. Cheben, and G.Z. Mashanovich, “Mid-Infrared Silicon-on-Insulator Fourier-Transform Spectrometer Chip,” IEEE Phot. Techn. Lett. 28(4), 528–531, (2016).
[Crossref]

Verheyen, P.

Vincent, B.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Vinter, B.

M. Carras, C. Renard, X. Marcadet, J. L. Reverchon, B. Vinter, and V. Berger, “Generation-recombination reduction in InAsSb photodiodes,” Semicond. Sci. Technol. 21, 1720–1723 (2006).
[Crossref]

Vogel, W.

W. S. Zaoui, M. F. Rosa, W. Vogel, M. Berroth, J. Butschke, and F. Letzkus, “Cost-effective CMOS-compatible grating couplers with backside metal mirror and 69 % coupling efficiency,” Opt. Express 20, (26)238–243 (2012).
[Crossref] [PubMed]

Vurgaftman, I.

J. Abell, C. S. Kim, W. W. Bewley, C. D. Merritt, C. L. Canedy, I. Vurgaftman, J. R. Meyer, and M. Kim, “Mid-infrared interband cascade light emitting devices with milliwatt output powers at room temperature,” Appl. Phys. Lett. 104, 261103 (2014).
[Crossref]

Wang, R.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Wicks, G. W.

S. Maimon and G. W. Wicks, “nBn detector, an infrared detector with reduced dark current and higher operating temperature,” Appl. Phys. Lett. 89, 151109 (2006).
[Crossref]

Zaoui, W. S.

W. S. Zaoui, M. F. Rosa, W. Vogel, M. Berroth, J. Butschke, and F. Letzkus, “Cost-effective CMOS-compatible grating couplers with backside metal mirror and 69 % coupling efficiency,” Opt. Express 20, (26)238–243 (2012).
[Crossref] [PubMed]

ACS Photonics (1)

T. Stark, M. Imboden, S. Kaya, A. Mertiri, J. Chang, S. Erramilli, and D. Bishop, “MEMS Tunable Mid-Infrared Plasmonic Spectrometer,” ACS Photonics 6(1), 14–19 (2016).
[Crossref]

Appl. Phys. Lett. (2)

J. Abell, C. S. Kim, W. W. Bewley, C. D. Merritt, C. L. Canedy, I. Vurgaftman, J. R. Meyer, and M. Kim, “Mid-infrared interband cascade light emitting devices with milliwatt output powers at room temperature,” Appl. Phys. Lett. 104, 261103 (2014).
[Crossref]

S. Maimon and G. W. Wicks, “nBn detector, an infrared detector with reduced dark current and higher operating temperature,” Appl. Phys. Lett. 89, 151109 (2006).
[Crossref]

IEEE J. Sel. Top, Quantum Electron. (1)

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, Jean-Baptiste Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,”IEEE J. Sel. Top, Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

IEEE Phot. Techn. Lett. (2)

M. Nedeljkovic, A.V. Velasco, A.Z. Khokhar, A. Delage, P. Cheben, and G.Z. Mashanovich, “Mid-Infrared Silicon-on-Insulator Fourier-Transform Spectrometer Chip,” IEEE Phot. Techn. Lett. 28(4), 528–531, (2016).
[Crossref]

N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tourni, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Phot. Techn. Lett. 231760 (2011).
[Crossref]

J. Sel. Top. Quantum Electron. (1)

W. Bogaerts, S. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-Insulator Spectral Filters Fabricated with CMOS Technology,” J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

Opt. Express (5)

W. S. Zaoui, M. F. Rosa, W. Vogel, M. Berroth, J. Butschke, and F. Letzkus, “Cost-effective CMOS-compatible grating couplers with backside metal mirror and 69 % coupling efficiency,” Opt. Express 20, (26)238–243 (2012).
[Crossref] [PubMed]

A. Gassenq, N. Hattasan, E.M.P. Ryckeboer, J.B. Rodriguez, L. Cerutti, E. Tourni, and G. Roelkens, “Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip,” Opt. Express 20(11), 11665–11672 (2012).
[Crossref] [PubMed]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J-B Rodriguez, E. Tournie, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E.M.P. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Mashanovich, and G. Roelkens, “Demonstration of silicon on insulator mid-infrared spectrometers operating at 3.8 um,” Opt. Express 21(10), 11659–11669 (2013).
[Crossref] [PubMed]

M. Muneeb, A. Ruocco, A. Malik, S. Pathak, E.M.P. Ryckeboer, D. Sanchez, L. Cerutti, J.B. Rodriguez, E. Tournie, W. Bogaerts, M. Smit, and G. Roelkens, “Silicon-on-insulator shortwave infrared wavelength meter with integrated photodiodes for on-chip laser monitoring,” Opt. Express 22(22), 27300–27308 (2014).
[Crossref] [PubMed]

Opt. Mater. Express (1)

S. Seifert and P. Runge, “Revised refractive index and absorption of In1-xGaxAsyP1-y lattice-matched to InP in transparent and absorption IR-region,” Opt. Mater. Express 6(2), 251691 (2016).
[Crossref]

Optical Materials (1)

Y. Mao and A. Krier, “Uncooled 4.2 μ m light emitting diodes based on InAs0.91Sb0.09 GaSb grown by LPE,” Optical Materials 6, 55–61 (1996).
[Crossref]

phys. stat. sol. (a) 202 (1)

H. Ait-Kaci, J. Nieto, J. B. Rodriguez, P. Grech, F. Chevrier, A. Salesse, A. Joulli, and P. Christol, “Optimization of InAsSb photodetector for non-cryogenic operation in the mid-infrared range,” phys. stat. sol. (a) 202,  4, 647–651 (2005).
[Crossref]

Semicond. Sci. Technol. (1)

M. Carras, C. Renard, X. Marcadet, J. L. Reverchon, B. Vinter, and V. Berger, “Generation-recombination reduction in InAsSb photodiodes,” Semicond. Sci. Technol. 21, 1720–1723 (2006).
[Crossref]

Other (2)

J. G. Crowder, S. D. Smith, A. Vass, and J. Keddie, “Infrared methods for gas detection,” in Mid-Infrared Semiconductor Optoelectronics (Springer, 2006).
[Crossref]

P. Larkin, Infrared and Raman Spectroscopy; Principles and Spectral Interpretation (Elsevier, 2011).

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (7)

Fig. 1
Fig. 1 Schematic view of the grating-based coupling scheme.
Fig. 2
Fig. 2 2D full-vectorial simulation of the fraction of power that is absorbed in the intrinsic region of p-i-n photodiode as a function of bottom and top cladding thickness.
Fig. 3
Fig. 3 (a) Microscopic image of complete fabricated device, (b) close-up of a single heterogeneously integrated photodiode and (c) SEM cross-section of the photodiode. The SEM image is taken on the dotted line.
Fig. 4
Fig. 4 (a) Effect of DVS-BCB passivation on room temperature IV-characteristics of the photodiode, (b) Dark current density versus perimeter to surface area ratio for different photodiode mesa sizes.
Fig. 5
Fig. 5 Schematic of the measurement setup used to characterize the integrated spectrometer.
Fig. 6
Fig. 6 Measured photoresponse of the integrated spectrometer.
Fig. 7
Fig. 7 2D full-vectorial calculation for improvement in detector absorption by using a bottom metal mirror (grating parameters: period 2 μm, etch depth 230 nm and duty cycle 50%).

Equations (1)

Equations on this page are rendered with MathJax. Learn more.

D * = R p d * R o A 4 k T

Metrics