Abstract

We report significant improvement in optical and electrical properties of green InGaN/GaN light-emitting diodes (LEDs) by using Si-doped graded short-period InGaN/GaN superlattice (SiGSL) formed by so called indium-conversion technique. For comparison, a conventional LED without the superlattice (C-LED) and a LED with undoped graded superlattice (unGSL-LED) were prepared, respectively. The photoluminescence (PL) intensity of the SiGSL-LED was increased more than 3 times at room temperature (RT) as compared to C-LED. The PL intensity ratios of RT to 10K for the C-LED, unGSL-LED, and SiGSL-LED were measured to be 25, 40.9, and 47.5%, respectively. The difference in carrier lifetimes between 10K and RT for the SiGSL-LED is relatively small compared to that of the C-LED, which is consistent with the variation in PL intensity. The output power of a transistor-outline type SiGSL-LED was increased more than 2 times higher than that of the C-LED.

© 2016 Optical Society of America

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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  6. K. T. Delaney, P. Rinke, and C. G. Van de Walle, “Auger recombination rates in nitrides from first principles,” Appl. Phys. Lett. 94(19), 191109 (2009).
    [Crossref]
  7. R. Hashimoto, J. I. Hwang, S. Saito, and S. Nunoue, “High-efficiency green-yellow light-emitting diodes grown on sapphire (0001) substrate,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 10(11), 1529–1532 (2013).
    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref] [PubMed]
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    [Crossref]
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    [Crossref]
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  14. C. Jia, T. Yu, H. Lu, C. Zhong, Y. Sun, Y. Tong, and G. Zhang, “Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs,” Opt. Express 21(7), 8444–8449 (2013).
    [Crossref] [PubMed]
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    [Crossref]
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    [Crossref]
  17. N. Duxbury, U. Bangert, P. Dawson, E. J. Thrush, W. Van der Stricht, K. Jacobs, and I. Moerman, “Indium segregation in InGaN quantum-well structures,” Appl. Phys. Lett. 76(12), 1600 (2000).
    [Crossref]
  18. Y. Chen, T. Takeuchi, H. Amano, I. Akasaki, N. Yamada, Y. Kaneko, and S. Y. Wang, “Pit formation in GaInN quantum wells,” Appl. Phys. Lett. 72(6), 710 (1998).
    [Crossref]
  19. H. K. Cho, J. Y. Lee, G. M. Yang, and C. S. Kim, “Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density,” Appl. Phys. Lett. 79(2), 215 (2001).
    [Crossref]
  20. P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, P. DenBaars, and J. S. Speck, “Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films,” Appl. Phys. Lett. 83(4), 674 (2003).
    [Crossref]
  21. Z. Xu, J. Zhang, H. Duan, Z. Zhang, Q. Zhu, H. Xu, and Y. Hao, “Stress, structural and electrical properties of Si-doped GaN film grown by MOCVD,” J. Semicond. 30(12), 123003 (2009).
    [Crossref]
  22. N. Nanhui, W. Huaibing, L. Jianping, L. Naixin, X. Yanhui, H. Jun, D. Jun, and S. Guangdi, “Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction,” Solid-State Electron. 51(6), 860–864 (2007).
    [Crossref]
  23. K.-M. Song, P.-G. Kang, H.-S. Shin, J.-M. Kim, W.-K. Park, C.-G. Ko, H.-W. Shim, and D. Ho Yoon, “Influence of AlGaN/GaN/InGaN superlattice on the characteristics of LEDs grown by metalorganic chemical vapor deposition,” J. Cryst. Growth 312(20), 2847–2851 (2010).
    [Crossref]
  24. L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
    [Crossref]
  25. M. Y. Ryu, C. Q. Chen, J. S. Kim, and M. Asif Khan, “Optical characterization of quaternary AlInGaN epilayer and multiple quantum wells grown by a pulsed metalorganic chemical vapor deposition,” Curr. Appl. Phys. 11(2), 231–235 (2011).
    [Crossref]
  26. J. Ma, L. Wang, Z. Liu, G. Yuan, X. Ji, P. Ma, J. Wang, X. Yi, G. Wang, and J. Li, “Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching,” Opt. Express 21(3), 3547–3556 (2013).
    [Crossref] [PubMed]
  27. J. K. Sheu, G. C. Chi, and M. J. Jou, “Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer,” IEEE Photonics Technol. Lett. 13(11), 1164–1166 (2001).
    [Crossref]
  28. C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
    [Crossref]
  29. H. Masui, J. Sonoda, N. Pfaff, I. Koslow, S. Nakamura, and S. P. DenBaars, “Quantum-confined stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes,” J. Phys. D Appl. Phys. 41(16), 165105 (2008).
    [Crossref]
  30. T. Kuroda and A. Tackeuchi, “Influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN quantum wells,” J. Appl. Phys. 92(6), 3071 (2002).
    [Crossref]
  31. C. Lu, L. Wang, J. Lu, R. Li, L. Liu, D. Li, N. Liu, L. Li, W. Cao, W. Yang, W. Chen, W. Du, C.-T. Lee, and X. Hu, “Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents,” J. Appl. Phys. 113(1), 013102 (2013).
    [Crossref]

2014 (1)

C. Du, Z. Ma, J. Zhou, T. Lu, Y. Jiang, P. Zuo, H. Jia, and H. Chen, “Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption,” Appl. Phys. Lett. 105(7), 071108 (2014).
[Crossref]

2013 (7)

C. Lu, L. Wang, J. Lu, R. Li, L. Liu, D. Li, N. Liu, L. Li, W. Cao, W. Yang, W. Chen, W. Du, C.-T. Lee, and X. Hu, “Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents,” J. Appl. Phys. 113(1), 013102 (2013).
[Crossref]

J. Ma, L. Wang, Z. Liu, G. Yuan, X. Ji, P. Ma, J. Wang, X. Yi, G. Wang, and J. Li, “Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching,” Opt. Express 21(3), 3547–3556 (2013).
[Crossref] [PubMed]

C. Jia, T. Yu, H. Lu, C. Zhong, Y. Sun, Y. Tong, and G. Zhang, “Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs,” Opt. Express 21(7), 8444–8449 (2013).
[Crossref] [PubMed]

S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, “InGaN light-emitting diodes on c-face sapphire substrates in green gap spectral range,” Appl. Phys. Express 6(11), 111004 (2013).
[Crossref]

M. A. Hoffbauer, T. L. Williamson, J. J. Williams, J. L. Fordham, K. M. Yu, W. Walukiewicz, and L. A. Reichertz, “In-rich InGaN thin films: progress on growth, compositional uniformity, and doping for device applications,” J. Vac. Sci. Technol. B 31(3), 03C114 (2013).
[Crossref]

R. Hashimoto, J. I. Hwang, S. Saito, and S. Nunoue, “High-efficiency green-yellow light-emitting diodes grown on sapphire (0001) substrate,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 10(11), 1529–1532 (2013).
[Crossref]

H. J. Li, P. P. Li, J. J. Kang, Z. Li, Y. Y. Zhang, Z. Li, J. Li, X. Y. Yi, J. M. Li, and G. H. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

2012 (2)

Y. A. Chang, Y. T. Kuo, J. Y. Chang, and Y. K. Kuo, “Investigation of InGaN green light-emitting diodes with chirped multiple quantum well structures,” Opt. Lett. 37(12), 2205–2207 (2012).
[Crossref] [PubMed]

N. Zhang, Z. Liu, T. B. Wei, L. Zhang, X. C. Wei, X. D. Wang, H. X. Lu, J. M. Li, and J. X. Wang, “Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes,” Appl. Phys. Lett. 100(5), 053504 (2012).
[Crossref]

2011 (5)

Y. Y. Zhang and Y. A. Yin, “Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer,” Appl. Phys. Lett. 99(22), 221103 (2011).
[Crossref]

M. Y. Ryu, C. Q. Chen, J. S. Kim, and M. Asif Khan, “Optical characterization of quaternary AlInGaN epilayer and multiple quantum wells grown by a pulsed metalorganic chemical vapor deposition,” Curr. Appl. Phys. 11(2), 231–235 (2011).
[Crossref]

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. V. Kryzhanovskaya, V. S. Sizov, M. A. Synitsin, E. V. Yakovlev, A. E. Chernyakov, A. L. Zakgeim, N. A. Cherkashin, and M. Hytch, “InGaN/GaN short-period superlattices: synthesis, properties, applications,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2308–2310 (2011).
[Crossref]

2010 (3)

K.-M. Song, P.-G. Kang, H.-S. Shin, J.-M. Kim, W.-K. Park, C.-G. Ko, H.-W. Shim, and D. Ho Yoon, “Influence of AlGaN/GaN/InGaN superlattice on the characteristics of LEDs grown by metalorganic chemical vapor deposition,” J. Cryst. Growth 312(20), 2847–2851 (2010).
[Crossref]

V. S. Sizov, A. F. Tsatsulnikov, A. V. Sakharov, W. V. Lundin, E. E. Zavarin, N. A. Cherkashin, M. J. Hytch, A. E. Nikolaev, A. M. Mintairovd, Y. He, and J. L. Merz, “The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes,” Semiconductors 44(7), 924–930 (2010).
[Crossref]

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

2009 (3)

M. H. Crawford, “LEDs for solid-state lighting: performance challenges and recent advances,” IEEE Sel. Top. Quantum Electron. 15(4), 1028–1040 (2009).
[Crossref]

K. T. Delaney, P. Rinke, and C. G. Van de Walle, “Auger recombination rates in nitrides from first principles,” Appl. Phys. Lett. 94(19), 191109 (2009).
[Crossref]

Z. Xu, J. Zhang, H. Duan, Z. Zhang, Q. Zhu, H. Xu, and Y. Hao, “Stress, structural and electrical properties of Si-doped GaN film grown by MOCVD,” J. Semicond. 30(12), 123003 (2009).
[Crossref]

2008 (1)

H. Masui, J. Sonoda, N. Pfaff, I. Koslow, S. Nakamura, and S. P. DenBaars, “Quantum-confined stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes,” J. Phys. D Appl. Phys. 41(16), 165105 (2008).
[Crossref]

2007 (2)

N. Nanhui, W. Huaibing, L. Jianping, L. Naixin, X. Yanhui, H. Jun, D. Jun, and S. Guangdi, “Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction,” Solid-State Electron. 51(6), 860–864 (2007).
[Crossref]

M. R. Krames, O. B. Shchekin, R. M. Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
[Crossref]

2003 (1)

P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, P. DenBaars, and J. S. Speck, “Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films,” Appl. Phys. Lett. 83(4), 674 (2003).
[Crossref]

2002 (2)

T. Kuroda and A. Tackeuchi, “Influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN quantum wells,” J. Appl. Phys. 92(6), 3071 (2002).
[Crossref]

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

2001 (2)

H. K. Cho, J. Y. Lee, G. M. Yang, and C. S. Kim, “Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density,” Appl. Phys. Lett. 79(2), 215 (2001).
[Crossref]

J. K. Sheu, G. C. Chi, and M. J. Jou, “Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer,” IEEE Photonics Technol. Lett. 13(11), 1164–1166 (2001).
[Crossref]

2000 (1)

N. Duxbury, U. Bangert, P. Dawson, E. J. Thrush, W. Van der Stricht, K. Jacobs, and I. Moerman, “Indium segregation in InGaN quantum-well structures,” Appl. Phys. Lett. 76(12), 1600 (2000).
[Crossref]

1998 (1)

Y. Chen, T. Takeuchi, H. Amano, I. Akasaki, N. Yamada, Y. Kaneko, and S. Y. Wang, “Pit formation in GaInN quantum wells,” Appl. Phys. Lett. 72(6), 710 (1998).
[Crossref]

Akasaki, I.

Y. Chen, T. Takeuchi, H. Amano, I. Akasaki, N. Yamada, Y. Kaneko, and S. Y. Wang, “Pit formation in GaInN quantum wells,” Appl. Phys. Lett. 72(6), 710 (1998).
[Crossref]

Amano, H.

Y. Chen, T. Takeuchi, H. Amano, I. Akasaki, N. Yamada, Y. Kaneko, and S. Y. Wang, “Pit formation in GaInN quantum wells,” Appl. Phys. Lett. 72(6), 710 (1998).
[Crossref]

Asif Khan, M.

M. Y. Ryu, C. Q. Chen, J. S. Kim, and M. Asif Khan, “Optical characterization of quaternary AlInGaN epilayer and multiple quantum wells grown by a pulsed metalorganic chemical vapor deposition,” Curr. Appl. Phys. 11(2), 231–235 (2011).
[Crossref]

Bangert, U.

N. Duxbury, U. Bangert, P. Dawson, E. J. Thrush, W. Van der Stricht, K. Jacobs, and I. Moerman, “Indium segregation in InGaN quantum-well structures,” Appl. Phys. Lett. 76(12), 1600 (2000).
[Crossref]

Bremers, H.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Cantu, P.

P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, P. DenBaars, and J. S. Speck, “Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films,” Appl. Phys. Lett. 83(4), 674 (2003).
[Crossref]

Cao, W.

C. Lu, L. Wang, J. Lu, R. Li, L. Liu, D. Li, N. Liu, L. Li, W. Cao, W. Yang, W. Chen, W. Du, C.-T. Lee, and X. Hu, “Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents,” J. Appl. Phys. 113(1), 013102 (2013).
[Crossref]

Chang, C. Y.

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]

Chang, J. Y.

Chang, S. J.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Chang, S. P.

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Chang, W. T.

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Chang, Y. A.

Chen, C. H.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Chen, C. Q.

M. Y. Ryu, C. Q. Chen, J. S. Kim, and M. Asif Khan, “Optical characterization of quaternary AlInGaN epilayer and multiple quantum wells grown by a pulsed metalorganic chemical vapor deposition,” Curr. Appl. Phys. 11(2), 231–235 (2011).
[Crossref]

Chen, H.

C. Du, Z. Ma, J. Zhou, T. Lu, Y. Jiang, P. Zuo, H. Jia, and H. Chen, “Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption,” Appl. Phys. Lett. 105(7), 071108 (2014).
[Crossref]

Chen, J. F.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Chen, W.

C. Lu, L. Wang, J. Lu, R. Li, L. Liu, D. Li, N. Liu, L. Li, W. Cao, W. Yang, W. Chen, W. Du, C.-T. Lee, and X. Hu, “Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents,” J. Appl. Phys. 113(1), 013102 (2013).
[Crossref]

Chen, Y.

Y. Chen, T. Takeuchi, H. Amano, I. Akasaki, N. Yamada, Y. Kaneko, and S. Y. Wang, “Pit formation in GaInN quantum wells,” Appl. Phys. Lett. 72(6), 710 (1998).
[Crossref]

Cherkashin, N. A.

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. V. Kryzhanovskaya, V. S. Sizov, M. A. Synitsin, E. V. Yakovlev, A. E. Chernyakov, A. L. Zakgeim, N. A. Cherkashin, and M. Hytch, “InGaN/GaN short-period superlattices: synthesis, properties, applications,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2308–2310 (2011).
[Crossref]

V. S. Sizov, A. F. Tsatsulnikov, A. V. Sakharov, W. V. Lundin, E. E. Zavarin, N. A. Cherkashin, M. J. Hytch, A. E. Nikolaev, A. M. Mintairovd, Y. He, and J. L. Merz, “The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes,” Semiconductors 44(7), 924–930 (2010).
[Crossref]

Chernyakov, A. E.

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. V. Kryzhanovskaya, V. S. Sizov, M. A. Synitsin, E. V. Yakovlev, A. E. Chernyakov, A. L. Zakgeim, N. A. Cherkashin, and M. Hytch, “InGaN/GaN short-period superlattices: synthesis, properties, applications,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2308–2310 (2011).
[Crossref]

Chi, G. C.

J. K. Sheu, G. C. Chi, and M. J. Jou, “Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer,” IEEE Photonics Technol. Lett. 13(11), 1164–1166 (2001).
[Crossref]

Cho, H. K.

H. K. Cho, J. Y. Lee, G. M. Yang, and C. S. Kim, “Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density,” Appl. Phys. Lett. 79(2), 215 (2001).
[Crossref]

Craford, M. G.

M. R. Krames, O. B. Shchekin, R. M. Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
[Crossref]

Crawford, M. H.

M. H. Crawford, “LEDs for solid-state lighting: performance challenges and recent advances,” IEEE Sel. Top. Quantum Electron. 15(4), 1028–1040 (2009).
[Crossref]

Dawson, P.

N. Duxbury, U. Bangert, P. Dawson, E. J. Thrush, W. Van der Stricht, K. Jacobs, and I. Moerman, “Indium segregation in InGaN quantum-well structures,” Appl. Phys. Lett. 76(12), 1600 (2000).
[Crossref]

Delaney, K. T.

K. T. Delaney, P. Rinke, and C. G. Van de Walle, “Auger recombination rates in nitrides from first principles,” Appl. Phys. Lett. 94(19), 191109 (2009).
[Crossref]

DenBaars, P.

P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, P. DenBaars, and J. S. Speck, “Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films,” Appl. Phys. Lett. 83(4), 674 (2003).
[Crossref]

DenBaars, S. P.

H. Masui, J. Sonoda, N. Pfaff, I. Koslow, S. Nakamura, and S. P. DenBaars, “Quantum-confined stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes,” J. Phys. D Appl. Phys. 41(16), 165105 (2008).
[Crossref]

Du, C.

C. Du, Z. Ma, J. Zhou, T. Lu, Y. Jiang, P. Zuo, H. Jia, and H. Chen, “Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption,” Appl. Phys. Lett. 105(7), 071108 (2014).
[Crossref]

Du, W.

C. Lu, L. Wang, J. Lu, R. Li, L. Liu, D. Li, N. Liu, L. Li, W. Cao, W. Yang, W. Chen, W. Du, C.-T. Lee, and X. Hu, “Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents,” J. Appl. Phys. 113(1), 013102 (2013).
[Crossref]

Duan, H.

Z. Xu, J. Zhang, H. Duan, Z. Zhang, Q. Zhu, H. Xu, and Y. Hao, “Stress, structural and electrical properties of Si-doped GaN film grown by MOCVD,” J. Semicond. 30(12), 123003 (2009).
[Crossref]

Duxbury, N.

N. Duxbury, U. Bangert, P. Dawson, E. J. Thrush, W. Van der Stricht, K. Jacobs, and I. Moerman, “Indium segregation in InGaN quantum-well structures,” Appl. Phys. Lett. 76(12), 1600 (2000).
[Crossref]

Fordham, J. L.

M. A. Hoffbauer, T. L. Williamson, J. J. Williams, J. L. Fordham, K. M. Yu, W. Walukiewicz, and L. A. Reichertz, “In-rich InGaN thin films: progress on growth, compositional uniformity, and doping for device applications,” J. Vac. Sci. Technol. B 31(3), 03C114 (2013).
[Crossref]

Guangdi, S.

N. Nanhui, W. Huaibing, L. Jianping, L. Naixin, X. Yanhui, H. Jun, D. Jun, and S. Guangdi, “Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction,” Solid-State Electron. 51(6), 860–864 (2007).
[Crossref]

Hangleiter, A.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Hao, Y.

Z. Xu, J. Zhang, H. Duan, Z. Zhang, Q. Zhu, H. Xu, and Y. Hao, “Stress, structural and electrical properties of Si-doped GaN film grown by MOCVD,” J. Semicond. 30(12), 123003 (2009).
[Crossref]

Harbers, G.

M. R. Krames, O. B. Shchekin, R. M. Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
[Crossref]

Hashimoto, R.

R. Hashimoto, J. I. Hwang, S. Saito, and S. Nunoue, “High-efficiency green-yellow light-emitting diodes grown on sapphire (0001) substrate,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 10(11), 1529–1532 (2013).
[Crossref]

S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, “InGaN light-emitting diodes on c-face sapphire substrates in green gap spectral range,” Appl. Phys. Express 6(11), 111004 (2013).
[Crossref]

He, Y.

V. S. Sizov, A. F. Tsatsulnikov, A. V. Sakharov, W. V. Lundin, E. E. Zavarin, N. A. Cherkashin, M. J. Hytch, A. E. Nikolaev, A. M. Mintairovd, Y. He, and J. L. Merz, “The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes,” Semiconductors 44(7), 924–930 (2010).
[Crossref]

Ho Yoon, D.

K.-M. Song, P.-G. Kang, H.-S. Shin, J.-M. Kim, W.-K. Park, C.-G. Ko, H.-W. Shim, and D. Ho Yoon, “Influence of AlGaN/GaN/InGaN superlattice on the characteristics of LEDs grown by metalorganic chemical vapor deposition,” J. Cryst. Growth 312(20), 2847–2851 (2010).
[Crossref]

Hoffbauer, M. A.

M. A. Hoffbauer, T. L. Williamson, J. J. Williams, J. L. Fordham, K. M. Yu, W. Walukiewicz, and L. A. Reichertz, “In-rich InGaN thin films: progress on growth, compositional uniformity, and doping for device applications,” J. Vac. Sci. Technol. B 31(3), 03C114 (2013).
[Crossref]

Hoffmann, L.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Hu, X.

C. Lu, L. Wang, J. Lu, R. Li, L. Liu, D. Li, N. Liu, L. Li, W. Cao, W. Yang, W. Chen, W. Du, C.-T. Lee, and X. Hu, “Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents,” J. Appl. Phys. 113(1), 013102 (2013).
[Crossref]

Huaibing, W.

N. Nanhui, W. Huaibing, L. Jianping, L. Naixin, X. Yanhui, H. Jun, D. Jun, and S. Guangdi, “Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction,” Solid-State Electron. 51(6), 860–864 (2007).
[Crossref]

Hwang, J.

S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, “InGaN light-emitting diodes on c-face sapphire substrates in green gap spectral range,” Appl. Phys. Express 6(11), 111004 (2013).
[Crossref]

Hwang, J. I.

R. Hashimoto, J. I. Hwang, S. Saito, and S. Nunoue, “High-efficiency green-yellow light-emitting diodes grown on sapphire (0001) substrate,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 10(11), 1529–1532 (2013).
[Crossref]

Hytch, M.

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. V. Kryzhanovskaya, V. S. Sizov, M. A. Synitsin, E. V. Yakovlev, A. E. Chernyakov, A. L. Zakgeim, N. A. Cherkashin, and M. Hytch, “InGaN/GaN short-period superlattices: synthesis, properties, applications,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2308–2310 (2011).
[Crossref]

Hytch, M. J.

V. S. Sizov, A. F. Tsatsulnikov, A. V. Sakharov, W. V. Lundin, E. E. Zavarin, N. A. Cherkashin, M. J. Hytch, A. E. Nikolaev, A. M. Mintairovd, Y. He, and J. L. Merz, “The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes,” Semiconductors 44(7), 924–930 (2010).
[Crossref]

Jacobs, K.

N. Duxbury, U. Bangert, P. Dawson, E. J. Thrush, W. Van der Stricht, K. Jacobs, and I. Moerman, “Indium segregation in InGaN quantum-well structures,” Appl. Phys. Lett. 76(12), 1600 (2000).
[Crossref]

Ji, X.

Jia, C.

Jia, H.

C. Du, Z. Ma, J. Zhou, T. Lu, Y. Jiang, P. Zuo, H. Jia, and H. Chen, “Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption,” Appl. Phys. Lett. 105(7), 071108 (2014).
[Crossref]

Jiang, Y.

C. Du, Z. Ma, J. Zhou, T. Lu, Y. Jiang, P. Zuo, H. Jia, and H. Chen, “Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption,” Appl. Phys. Lett. 105(7), 071108 (2014).
[Crossref]

Jianping, L.

N. Nanhui, W. Huaibing, L. Jianping, L. Naixin, X. Yanhui, H. Jun, D. Jun, and S. Guangdi, “Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction,” Solid-State Electron. 51(6), 860–864 (2007).
[Crossref]

Jonen, H.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Jou, M. J.

J. K. Sheu, G. C. Chi, and M. J. Jou, “Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer,” IEEE Photonics Technol. Lett. 13(11), 1164–1166 (2001).
[Crossref]

Jun, D.

N. Nanhui, W. Huaibing, L. Jianping, L. Naixin, X. Yanhui, H. Jun, D. Jun, and S. Guangdi, “Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction,” Solid-State Electron. 51(6), 860–864 (2007).
[Crossref]

Jun, H.

N. Nanhui, W. Huaibing, L. Jianping, L. Naixin, X. Yanhui, H. Jun, D. Jun, and S. Guangdi, “Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction,” Solid-State Electron. 51(6), 860–864 (2007).
[Crossref]

Kaneko, Y.

Y. Chen, T. Takeuchi, H. Amano, I. Akasaki, N. Yamada, Y. Kaneko, and S. Y. Wang, “Pit formation in GaInN quantum wells,” Appl. Phys. Lett. 72(6), 710 (1998).
[Crossref]

Kang, J. J.

H. J. Li, P. P. Li, J. J. Kang, Z. Li, Y. Y. Zhang, Z. Li, J. Li, X. Y. Yi, J. M. Li, and G. H. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

Kang, P.-G.

K.-M. Song, P.-G. Kang, H.-S. Shin, J.-M. Kim, W.-K. Park, C.-G. Ko, H.-W. Shim, and D. Ho Yoon, “Influence of AlGaN/GaN/InGaN superlattice on the characteristics of LEDs grown by metalorganic chemical vapor deposition,” J. Cryst. Growth 312(20), 2847–2851 (2010).
[Crossref]

Ke, C. C.

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Keller, S.

P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, P. DenBaars, and J. S. Speck, “Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films,” Appl. Phys. Lett. 83(4), 674 (2003).
[Crossref]

Ketzer, F. A.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Kim, C. S.

H. K. Cho, J. Y. Lee, G. M. Yang, and C. S. Kim, “Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density,” Appl. Phys. Lett. 79(2), 215 (2001).
[Crossref]

Kim, J. S.

M. Y. Ryu, C. Q. Chen, J. S. Kim, and M. Asif Khan, “Optical characterization of quaternary AlInGaN epilayer and multiple quantum wells grown by a pulsed metalorganic chemical vapor deposition,” Curr. Appl. Phys. 11(2), 231–235 (2011).
[Crossref]

Kim, J.-M.

K.-M. Song, P.-G. Kang, H.-S. Shin, J.-M. Kim, W.-K. Park, C.-G. Ko, H.-W. Shim, and D. Ho Yoon, “Influence of AlGaN/GaN/InGaN superlattice on the characteristics of LEDs grown by metalorganic chemical vapor deposition,” J. Cryst. Growth 312(20), 2847–2851 (2010).
[Crossref]

Ko, C.-G.

K.-M. Song, P.-G. Kang, H.-S. Shin, J.-M. Kim, W.-K. Park, C.-G. Ko, H.-W. Shim, and D. Ho Yoon, “Influence of AlGaN/GaN/InGaN superlattice on the characteristics of LEDs grown by metalorganic chemical vapor deposition,” J. Cryst. Growth 312(20), 2847–2851 (2010).
[Crossref]

Koslow, I.

H. Masui, J. Sonoda, N. Pfaff, I. Koslow, S. Nakamura, and S. P. DenBaars, “Quantum-confined stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes,” J. Phys. D Appl. Phys. 41(16), 165105 (2008).
[Crossref]

Krames, M. R.

M. R. Krames, O. B. Shchekin, R. M. Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
[Crossref]

Kruse, A.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Kryzhanovskaya, N. V.

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. V. Kryzhanovskaya, V. S. Sizov, M. A. Synitsin, E. V. Yakovlev, A. E. Chernyakov, A. L. Zakgeim, N. A. Cherkashin, and M. Hytch, “InGaN/GaN short-period superlattices: synthesis, properties, applications,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2308–2310 (2011).
[Crossref]

Ku, P. H.

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]

Kuo, C. H.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Kuo, H. C.

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Kuo, Y. K.

Kuo, Y. T.

Kuroda, T.

T. Kuroda and A. Tackeuchi, “Influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN quantum wells,” J. Appl. Phys. 92(6), 3071 (2002).
[Crossref]

Lai, W. C.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Lan, Y. P.

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]

Langer, T.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Lee, C. Y.

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Lee, C.-T.

C. Lu, L. Wang, J. Lu, R. Li, L. Liu, D. Li, N. Liu, L. Li, W. Cao, W. Yang, W. Chen, W. Du, C.-T. Lee, and X. Hu, “Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents,” J. Appl. Phys. 113(1), 013102 (2013).
[Crossref]

Lee, J. Y.

H. K. Cho, J. Y. Lee, G. M. Yang, and C. S. Kim, “Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density,” Appl. Phys. Lett. 79(2), 215 (2001).
[Crossref]

Li, D.

C. Lu, L. Wang, J. Lu, R. Li, L. Liu, D. Li, N. Liu, L. Li, W. Cao, W. Yang, W. Chen, W. Du, C.-T. Lee, and X. Hu, “Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents,” J. Appl. Phys. 113(1), 013102 (2013).
[Crossref]

Li, H. J.

H. J. Li, P. P. Li, J. J. Kang, Z. Li, Y. Y. Zhang, Z. Li, J. Li, X. Y. Yi, J. M. Li, and G. H. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

Li, J.

H. J. Li, P. P. Li, J. J. Kang, Z. Li, Y. Y. Zhang, Z. Li, J. Li, X. Y. Yi, J. M. Li, and G. H. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

J. Ma, L. Wang, Z. Liu, G. Yuan, X. Ji, P. Ma, J. Wang, X. Yi, G. Wang, and J. Li, “Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching,” Opt. Express 21(3), 3547–3556 (2013).
[Crossref] [PubMed]

Li, J. C.

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Li, J. M.

H. J. Li, P. P. Li, J. J. Kang, Z. Li, Y. Y. Zhang, Z. Li, J. Li, X. Y. Yi, J. M. Li, and G. H. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

N. Zhang, Z. Liu, T. B. Wei, L. Zhang, X. C. Wei, X. D. Wang, H. X. Lu, J. M. Li, and J. X. Wang, “Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes,” Appl. Phys. Lett. 100(5), 053504 (2012).
[Crossref]

Li, L.

C. Lu, L. Wang, J. Lu, R. Li, L. Liu, D. Li, N. Liu, L. Li, W. Cao, W. Yang, W. Chen, W. Du, C.-T. Lee, and X. Hu, “Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents,” J. Appl. Phys. 113(1), 013102 (2013).
[Crossref]

Li, P. P.

H. J. Li, P. P. Li, J. J. Kang, Z. Li, Y. Y. Zhang, Z. Li, J. Li, X. Y. Yi, J. M. Li, and G. H. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

Li, R.

C. Lu, L. Wang, J. Lu, R. Li, L. Liu, D. Li, N. Liu, L. Li, W. Cao, W. Yang, W. Chen, W. Du, C.-T. Lee, and X. Hu, “Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents,” J. Appl. Phys. 113(1), 013102 (2013).
[Crossref]

Li, Z.

H. J. Li, P. P. Li, J. J. Kang, Z. Li, Y. Y. Zhang, Z. Li, J. Li, X. Y. Yi, J. M. Li, and G. H. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

H. J. Li, P. P. Li, J. J. Kang, Z. Li, Y. Y. Zhang, Z. Li, J. Li, X. Y. Yi, J. M. Li, and G. H. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

Li, Z. Y.

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Lin, C. C.

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]

Liu, L.

C. Lu, L. Wang, J. Lu, R. Li, L. Liu, D. Li, N. Liu, L. Li, W. Cao, W. Yang, W. Chen, W. Du, C.-T. Lee, and X. Hu, “Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents,” J. Appl. Phys. 113(1), 013102 (2013).
[Crossref]

Liu, N.

C. Lu, L. Wang, J. Lu, R. Li, L. Liu, D. Li, N. Liu, L. Li, W. Cao, W. Yang, W. Chen, W. Du, C.-T. Lee, and X. Hu, “Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents,” J. Appl. Phys. 113(1), 013102 (2013).
[Crossref]

Liu, Z.

J. Ma, L. Wang, Z. Liu, G. Yuan, X. Ji, P. Ma, J. Wang, X. Yi, G. Wang, and J. Li, “Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching,” Opt. Express 21(3), 3547–3556 (2013).
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N. Zhang, Z. Liu, T. B. Wei, L. Zhang, X. C. Wei, X. D. Wang, H. X. Lu, J. M. Li, and J. X. Wang, “Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes,” Appl. Phys. Lett. 100(5), 053504 (2012).
[Crossref]

Lu, C.

C. Lu, L. Wang, J. Lu, R. Li, L. Liu, D. Li, N. Liu, L. Li, W. Cao, W. Yang, W. Chen, W. Du, C.-T. Lee, and X. Hu, “Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents,” J. Appl. Phys. 113(1), 013102 (2013).
[Crossref]

Lu, H.

Lu, H. X.

N. Zhang, Z. Liu, T. B. Wei, L. Zhang, X. C. Wei, X. D. Wang, H. X. Lu, J. M. Li, and J. X. Wang, “Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes,” Appl. Phys. Lett. 100(5), 053504 (2012).
[Crossref]

Lu, J.

C. Lu, L. Wang, J. Lu, R. Li, L. Liu, D. Li, N. Liu, L. Li, W. Cao, W. Yang, W. Chen, W. Du, C.-T. Lee, and X. Hu, “Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents,” J. Appl. Phys. 113(1), 013102 (2013).
[Crossref]

Lu, T.

C. Du, Z. Ma, J. Zhou, T. Lu, Y. Jiang, P. Zuo, H. Jia, and H. Chen, “Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption,” Appl. Phys. Lett. 105(7), 071108 (2014).
[Crossref]

Lu, T. C.

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Lundin, W. V.

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. V. Kryzhanovskaya, V. S. Sizov, M. A. Synitsin, E. V. Yakovlev, A. E. Chernyakov, A. L. Zakgeim, N. A. Cherkashin, and M. Hytch, “InGaN/GaN short-period superlattices: synthesis, properties, applications,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2308–2310 (2011).
[Crossref]

V. S. Sizov, A. F. Tsatsulnikov, A. V. Sakharov, W. V. Lundin, E. E. Zavarin, N. A. Cherkashin, M. J. Hytch, A. E. Nikolaev, A. M. Mintairovd, Y. He, and J. L. Merz, “The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes,” Semiconductors 44(7), 924–930 (2010).
[Crossref]

Ma, J.

Ma, P.

Ma, Z.

C. Du, Z. Ma, J. Zhou, T. Lu, Y. Jiang, P. Zuo, H. Jia, and H. Chen, “Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption,” Appl. Phys. Lett. 105(7), 071108 (2014).
[Crossref]

Mach, R. M.

M. R. Krames, O. B. Shchekin, R. M. Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
[Crossref]

Masui, H.

H. Masui, J. Sonoda, N. Pfaff, I. Koslow, S. Nakamura, and S. P. DenBaars, “Quantum-confined stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes,” J. Phys. D Appl. Phys. 41(16), 165105 (2008).
[Crossref]

Merz, J. L.

V. S. Sizov, A. F. Tsatsulnikov, A. V. Sakharov, W. V. Lundin, E. E. Zavarin, N. A. Cherkashin, M. J. Hytch, A. E. Nikolaev, A. M. Mintairovd, Y. He, and J. L. Merz, “The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes,” Semiconductors 44(7), 924–930 (2010).
[Crossref]

Mintairovd, A. M.

V. S. Sizov, A. F. Tsatsulnikov, A. V. Sakharov, W. V. Lundin, E. E. Zavarin, N. A. Cherkashin, M. J. Hytch, A. E. Nikolaev, A. M. Mintairovd, Y. He, and J. L. Merz, “The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes,” Semiconductors 44(7), 924–930 (2010).
[Crossref]

Mishra, U. K.

P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, P. DenBaars, and J. S. Speck, “Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films,” Appl. Phys. Lett. 83(4), 674 (2003).
[Crossref]

Moerman, I.

N. Duxbury, U. Bangert, P. Dawson, E. J. Thrush, W. Van der Stricht, K. Jacobs, and I. Moerman, “Indium segregation in InGaN quantum-well structures,” Appl. Phys. Lett. 76(12), 1600 (2000).
[Crossref]

Mueller, G. O.

M. R. Krames, O. B. Shchekin, R. M. Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
[Crossref]

Naixin, L.

N. Nanhui, W. Huaibing, L. Jianping, L. Naixin, X. Yanhui, H. Jun, D. Jun, and S. Guangdi, “Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction,” Solid-State Electron. 51(6), 860–864 (2007).
[Crossref]

Nakamura, S.

H. Masui, J. Sonoda, N. Pfaff, I. Koslow, S. Nakamura, and S. P. DenBaars, “Quantum-confined stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes,” J. Phys. D Appl. Phys. 41(16), 165105 (2008).
[Crossref]

Nanhui, N.

N. Nanhui, W. Huaibing, L. Jianping, L. Naixin, X. Yanhui, H. Jun, D. Jun, and S. Guangdi, “Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction,” Solid-State Electron. 51(6), 860–864 (2007).
[Crossref]

Nikolaev, A. E.

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. V. Kryzhanovskaya, V. S. Sizov, M. A. Synitsin, E. V. Yakovlev, A. E. Chernyakov, A. L. Zakgeim, N. A. Cherkashin, and M. Hytch, “InGaN/GaN short-period superlattices: synthesis, properties, applications,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2308–2310 (2011).
[Crossref]

V. S. Sizov, A. F. Tsatsulnikov, A. V. Sakharov, W. V. Lundin, E. E. Zavarin, N. A. Cherkashin, M. J. Hytch, A. E. Nikolaev, A. M. Mintairovd, Y. He, and J. L. Merz, “The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes,” Semiconductors 44(7), 924–930 (2010).
[Crossref]

Nunoue, S.

R. Hashimoto, J. I. Hwang, S. Saito, and S. Nunoue, “High-efficiency green-yellow light-emitting diodes grown on sapphire (0001) substrate,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 10(11), 1529–1532 (2013).
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S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, “InGaN light-emitting diodes on c-face sapphire substrates in green gap spectral range,” Appl. Phys. Express 6(11), 111004 (2013).
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Park, W.-K.

K.-M. Song, P.-G. Kang, H.-S. Shin, J.-M. Kim, W.-K. Park, C.-G. Ko, H.-W. Shim, and D. Ho Yoon, “Influence of AlGaN/GaN/InGaN superlattice on the characteristics of LEDs grown by metalorganic chemical vapor deposition,” J. Cryst. Growth 312(20), 2847–2851 (2010).
[Crossref]

Pfaff, N.

H. Masui, J. Sonoda, N. Pfaff, I. Koslow, S. Nakamura, and S. P. DenBaars, “Quantum-confined stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes,” J. Phys. D Appl. Phys. 41(16), 165105 (2008).
[Crossref]

Reichertz, L. A.

M. A. Hoffbauer, T. L. Williamson, J. J. Williams, J. L. Fordham, K. M. Yu, W. Walukiewicz, and L. A. Reichertz, “In-rich InGaN thin films: progress on growth, compositional uniformity, and doping for device applications,” J. Vac. Sci. Technol. B 31(3), 03C114 (2013).
[Crossref]

Rinke, P.

K. T. Delaney, P. Rinke, and C. G. Van de Walle, “Auger recombination rates in nitrides from first principles,” Appl. Phys. Lett. 94(19), 191109 (2009).
[Crossref]

Romanov, A. E.

P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, P. DenBaars, and J. S. Speck, “Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films,” Appl. Phys. Lett. 83(4), 674 (2003).
[Crossref]

Rossow, U.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
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Ryu, M. Y.

M. Y. Ryu, C. Q. Chen, J. S. Kim, and M. Asif Khan, “Optical characterization of quaternary AlInGaN epilayer and multiple quantum wells grown by a pulsed metalorganic chemical vapor deposition,” Curr. Appl. Phys. 11(2), 231–235 (2011).
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S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, “InGaN light-emitting diodes on c-face sapphire substrates in green gap spectral range,” Appl. Phys. Express 6(11), 111004 (2013).
[Crossref]

R. Hashimoto, J. I. Hwang, S. Saito, and S. Nunoue, “High-efficiency green-yellow light-emitting diodes grown on sapphire (0001) substrate,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 10(11), 1529–1532 (2013).
[Crossref]

Sakharov, A. V.

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. V. Kryzhanovskaya, V. S. Sizov, M. A. Synitsin, E. V. Yakovlev, A. E. Chernyakov, A. L. Zakgeim, N. A. Cherkashin, and M. Hytch, “InGaN/GaN short-period superlattices: synthesis, properties, applications,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2308–2310 (2011).
[Crossref]

V. S. Sizov, A. F. Tsatsulnikov, A. V. Sakharov, W. V. Lundin, E. E. Zavarin, N. A. Cherkashin, M. J. Hytch, A. E. Nikolaev, A. M. Mintairovd, Y. He, and J. L. Merz, “The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes,” Semiconductors 44(7), 924–930 (2010).
[Crossref]

Schwiegel, A.

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

Shchekin, O. B.

M. R. Krames, O. B. Shchekin, R. M. Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
[Crossref]

Sheu, J. K.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
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J. K. Sheu, G. C. Chi, and M. J. Jou, “Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer,” IEEE Photonics Technol. Lett. 13(11), 1164–1166 (2001).
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Shim, H.-W.

K.-M. Song, P.-G. Kang, H.-S. Shin, J.-M. Kim, W.-K. Park, C.-G. Ko, H.-W. Shim, and D. Ho Yoon, “Influence of AlGaN/GaN/InGaN superlattice on the characteristics of LEDs grown by metalorganic chemical vapor deposition,” J. Cryst. Growth 312(20), 2847–2851 (2010).
[Crossref]

Shin, H.-S.

K.-M. Song, P.-G. Kang, H.-S. Shin, J.-M. Kim, W.-K. Park, C.-G. Ko, H.-W. Shim, and D. Ho Yoon, “Influence of AlGaN/GaN/InGaN superlattice on the characteristics of LEDs grown by metalorganic chemical vapor deposition,” J. Cryst. Growth 312(20), 2847–2851 (2010).
[Crossref]

Sizov, V. S.

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. V. Kryzhanovskaya, V. S. Sizov, M. A. Synitsin, E. V. Yakovlev, A. E. Chernyakov, A. L. Zakgeim, N. A. Cherkashin, and M. Hytch, “InGaN/GaN short-period superlattices: synthesis, properties, applications,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2308–2310 (2011).
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V. S. Sizov, A. F. Tsatsulnikov, A. V. Sakharov, W. V. Lundin, E. E. Zavarin, N. A. Cherkashin, M. J. Hytch, A. E. Nikolaev, A. M. Mintairovd, Y. He, and J. L. Merz, “The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes,” Semiconductors 44(7), 924–930 (2010).
[Crossref]

Song, K.-M.

K.-M. Song, P.-G. Kang, H.-S. Shin, J.-M. Kim, W.-K. Park, C.-G. Ko, H.-W. Shim, and D. Ho Yoon, “Influence of AlGaN/GaN/InGaN superlattice on the characteristics of LEDs grown by metalorganic chemical vapor deposition,” J. Cryst. Growth 312(20), 2847–2851 (2010).
[Crossref]

Sonoda, J.

H. Masui, J. Sonoda, N. Pfaff, I. Koslow, S. Nakamura, and S. P. DenBaars, “Quantum-confined stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes,” J. Phys. D Appl. Phys. 41(16), 165105 (2008).
[Crossref]

Speck, J. S.

P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, P. DenBaars, and J. S. Speck, “Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films,” Appl. Phys. Lett. 83(4), 674 (2003).
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Su, Y. K.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Sun, Y.

Synitsin, M. A.

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. V. Kryzhanovskaya, V. S. Sizov, M. A. Synitsin, E. V. Yakovlev, A. E. Chernyakov, A. L. Zakgeim, N. A. Cherkashin, and M. Hytch, “InGaN/GaN short-period superlattices: synthesis, properties, applications,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2308–2310 (2011).
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T. Kuroda and A. Tackeuchi, “Influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN quantum wells,” J. Appl. Phys. 92(6), 3071 (2002).
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Thrush, E. J.

N. Duxbury, U. Bangert, P. Dawson, E. J. Thrush, W. Van der Stricht, K. Jacobs, and I. Moerman, “Indium segregation in InGaN quantum-well structures,” Appl. Phys. Lett. 76(12), 1600 (2000).
[Crossref]

Tong, Y.

Tsatsulnikov, A. F.

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. V. Kryzhanovskaya, V. S. Sizov, M. A. Synitsin, E. V. Yakovlev, A. E. Chernyakov, A. L. Zakgeim, N. A. Cherkashin, and M. Hytch, “InGaN/GaN short-period superlattices: synthesis, properties, applications,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2308–2310 (2011).
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V. S. Sizov, A. F. Tsatsulnikov, A. V. Sakharov, W. V. Lundin, E. E. Zavarin, N. A. Cherkashin, M. J. Hytch, A. E. Nikolaev, A. M. Mintairovd, Y. He, and J. L. Merz, “The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes,” Semiconductors 44(7), 924–930 (2010).
[Crossref]

Usov, S. O.

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. V. Kryzhanovskaya, V. S. Sizov, M. A. Synitsin, E. V. Yakovlev, A. E. Chernyakov, A. L. Zakgeim, N. A. Cherkashin, and M. Hytch, “InGaN/GaN short-period superlattices: synthesis, properties, applications,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2308–2310 (2011).
[Crossref]

Van de Walle, C. G.

K. T. Delaney, P. Rinke, and C. G. Van de Walle, “Auger recombination rates in nitrides from first principles,” Appl. Phys. Lett. 94(19), 191109 (2009).
[Crossref]

Van der Stricht, W.

N. Duxbury, U. Bangert, P. Dawson, E. J. Thrush, W. Van der Stricht, K. Jacobs, and I. Moerman, “Indium segregation in InGaN quantum-well structures,” Appl. Phys. Lett. 76(12), 1600 (2000).
[Crossref]

Waltereit, P.

P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, P. DenBaars, and J. S. Speck, “Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films,” Appl. Phys. Lett. 83(4), 674 (2003).
[Crossref]

Walukiewicz, W.

M. A. Hoffbauer, T. L. Williamson, J. J. Williams, J. L. Fordham, K. M. Yu, W. Walukiewicz, and L. A. Reichertz, “In-rich InGaN thin films: progress on growth, compositional uniformity, and doping for device applications,” J. Vac. Sci. Technol. B 31(3), 03C114 (2013).
[Crossref]

Wang, C. H.

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Wang, G.

Wang, G. H.

H. J. Li, P. P. Li, J. J. Kang, Z. Li, Y. Y. Zhang, Z. Li, J. Li, X. Y. Yi, J. M. Li, and G. H. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

Wang, J.

Wang, J. X.

N. Zhang, Z. Liu, T. B. Wei, L. Zhang, X. C. Wei, X. D. Wang, H. X. Lu, J. M. Li, and J. X. Wang, “Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes,” Appl. Phys. Lett. 100(5), 053504 (2012).
[Crossref]

Wang, L.

J. Ma, L. Wang, Z. Liu, G. Yuan, X. Ji, P. Ma, J. Wang, X. Yi, G. Wang, and J. Li, “Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching,” Opt. Express 21(3), 3547–3556 (2013).
[Crossref] [PubMed]

C. Lu, L. Wang, J. Lu, R. Li, L. Liu, D. Li, N. Liu, L. Li, W. Cao, W. Yang, W. Chen, W. Du, C.-T. Lee, and X. Hu, “Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents,” J. Appl. Phys. 113(1), 013102 (2013).
[Crossref]

Wang, S. C.

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Wang, S. Y.

Y. Chen, T. Takeuchi, H. Amano, I. Akasaki, N. Yamada, Y. Kaneko, and S. Y. Wang, “Pit formation in GaInN quantum wells,” Appl. Phys. Lett. 72(6), 710 (1998).
[Crossref]

Wang, X. D.

N. Zhang, Z. Liu, T. B. Wei, L. Zhang, X. C. Wei, X. D. Wang, H. X. Lu, J. M. Li, and J. X. Wang, “Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes,” Appl. Phys. Lett. 100(5), 053504 (2012).
[Crossref]

Wei, T. B.

N. Zhang, Z. Liu, T. B. Wei, L. Zhang, X. C. Wei, X. D. Wang, H. X. Lu, J. M. Li, and J. X. Wang, “Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes,” Appl. Phys. Lett. 100(5), 053504 (2012).
[Crossref]

Wei, X. C.

N. Zhang, Z. Liu, T. B. Wei, L. Zhang, X. C. Wei, X. D. Wang, H. X. Lu, J. M. Li, and J. X. Wang, “Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes,” Appl. Phys. Lett. 100(5), 053504 (2012).
[Crossref]

Wen, T. C.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Williams, J. J.

M. A. Hoffbauer, T. L. Williamson, J. J. Williams, J. L. Fordham, K. M. Yu, W. Walukiewicz, and L. A. Reichertz, “In-rich InGaN thin films: progress on growth, compositional uniformity, and doping for device applications,” J. Vac. Sci. Technol. B 31(3), 03C114 (2013).
[Crossref]

Williamson, T. L.

M. A. Hoffbauer, T. L. Williamson, J. J. Williams, J. L. Fordham, K. M. Yu, W. Walukiewicz, and L. A. Reichertz, “In-rich InGaN thin films: progress on growth, compositional uniformity, and doping for device applications,” J. Vac. Sci. Technol. B 31(3), 03C114 (2013).
[Crossref]

Wu, F.

P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, P. DenBaars, and J. S. Speck, “Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films,” Appl. Phys. Lett. 83(4), 674 (2003).
[Crossref]

Wu, L. W.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Xu, H.

Z. Xu, J. Zhang, H. Duan, Z. Zhang, Q. Zhu, H. Xu, and Y. Hao, “Stress, structural and electrical properties of Si-doped GaN film grown by MOCVD,” J. Semicond. 30(12), 123003 (2009).
[Crossref]

Xu, Z.

Z. Xu, J. Zhang, H. Duan, Z. Zhang, Q. Zhu, H. Xu, and Y. Hao, “Stress, structural and electrical properties of Si-doped GaN film grown by MOCVD,” J. Semicond. 30(12), 123003 (2009).
[Crossref]

Yakovlev, E. V.

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. V. Kryzhanovskaya, V. S. Sizov, M. A. Synitsin, E. V. Yakovlev, A. E. Chernyakov, A. L. Zakgeim, N. A. Cherkashin, and M. Hytch, “InGaN/GaN short-period superlattices: synthesis, properties, applications,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2308–2310 (2011).
[Crossref]

Yamada, N.

Y. Chen, T. Takeuchi, H. Amano, I. Akasaki, N. Yamada, Y. Kaneko, and S. Y. Wang, “Pit formation in GaInN quantum wells,” Appl. Phys. Lett. 72(6), 710 (1998).
[Crossref]

Yang, G. M.

H. K. Cho, J. Y. Lee, G. M. Yang, and C. S. Kim, “Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density,” Appl. Phys. Lett. 79(2), 215 (2001).
[Crossref]

Yang, H. C.

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Yang, W.

C. Lu, L. Wang, J. Lu, R. Li, L. Liu, D. Li, N. Liu, L. Li, W. Cao, W. Yang, W. Chen, W. Du, C.-T. Lee, and X. Hu, “Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents,” J. Appl. Phys. 113(1), 013102 (2013).
[Crossref]

Yanhui, X.

N. Nanhui, W. Huaibing, L. Jianping, L. Naixin, X. Yanhui, H. Jun, D. Jun, and S. Guangdi, “Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction,” Solid-State Electron. 51(6), 860–864 (2007).
[Crossref]

Yi, X.

Yi, X. Y.

H. J. Li, P. P. Li, J. J. Kang, Z. Li, Y. Y. Zhang, Z. Li, J. Li, X. Y. Yi, J. M. Li, and G. H. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

Yin, Y. A.

Y. Y. Zhang and Y. A. Yin, “Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer,” Appl. Phys. Lett. 99(22), 221103 (2011).
[Crossref]

Yu, K. M.

M. A. Hoffbauer, T. L. Williamson, J. J. Williams, J. L. Fordham, K. M. Yu, W. Walukiewicz, and L. A. Reichertz, “In-rich InGaN thin films: progress on growth, compositional uniformity, and doping for device applications,” J. Vac. Sci. Technol. B 31(3), 03C114 (2013).
[Crossref]

Yu, T.

Yuan, G.

Zakgeim, A. L.

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. V. Kryzhanovskaya, V. S. Sizov, M. A. Synitsin, E. V. Yakovlev, A. E. Chernyakov, A. L. Zakgeim, N. A. Cherkashin, and M. Hytch, “InGaN/GaN short-period superlattices: synthesis, properties, applications,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2308–2310 (2011).
[Crossref]

Zavarin, E. E.

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. V. Kryzhanovskaya, V. S. Sizov, M. A. Synitsin, E. V. Yakovlev, A. E. Chernyakov, A. L. Zakgeim, N. A. Cherkashin, and M. Hytch, “InGaN/GaN short-period superlattices: synthesis, properties, applications,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2308–2310 (2011).
[Crossref]

V. S. Sizov, A. F. Tsatsulnikov, A. V. Sakharov, W. V. Lundin, E. E. Zavarin, N. A. Cherkashin, M. J. Hytch, A. E. Nikolaev, A. M. Mintairovd, Y. He, and J. L. Merz, “The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes,” Semiconductors 44(7), 924–930 (2010).
[Crossref]

Zhang, G.

Zhang, J.

Z. Xu, J. Zhang, H. Duan, Z. Zhang, Q. Zhu, H. Xu, and Y. Hao, “Stress, structural and electrical properties of Si-doped GaN film grown by MOCVD,” J. Semicond. 30(12), 123003 (2009).
[Crossref]

Zhang, L.

N. Zhang, Z. Liu, T. B. Wei, L. Zhang, X. C. Wei, X. D. Wang, H. X. Lu, J. M. Li, and J. X. Wang, “Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes,” Appl. Phys. Lett. 100(5), 053504 (2012).
[Crossref]

Zhang, N.

N. Zhang, Z. Liu, T. B. Wei, L. Zhang, X. C. Wei, X. D. Wang, H. X. Lu, J. M. Li, and J. X. Wang, “Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes,” Appl. Phys. Lett. 100(5), 053504 (2012).
[Crossref]

Zhang, Y. Y.

H. J. Li, P. P. Li, J. J. Kang, Z. Li, Y. Y. Zhang, Z. Li, J. Li, X. Y. Yi, J. M. Li, and G. H. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

Y. Y. Zhang and Y. A. Yin, “Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer,” Appl. Phys. Lett. 99(22), 221103 (2011).
[Crossref]

Zhang, Z.

Z. Xu, J. Zhang, H. Duan, Z. Zhang, Q. Zhu, H. Xu, and Y. Hao, “Stress, structural and electrical properties of Si-doped GaN film grown by MOCVD,” J. Semicond. 30(12), 123003 (2009).
[Crossref]

Zhong, C.

Zhou, J.

C. Du, Z. Ma, J. Zhou, T. Lu, Y. Jiang, P. Zuo, H. Jia, and H. Chen, “Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption,” Appl. Phys. Lett. 105(7), 071108 (2014).
[Crossref]

Zhou, L.

M. R. Krames, O. B. Shchekin, R. M. Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
[Crossref]

Zhu, Q.

Z. Xu, J. Zhang, H. Duan, Z. Zhang, Q. Zhu, H. Xu, and Y. Hao, “Stress, structural and electrical properties of Si-doped GaN film grown by MOCVD,” J. Semicond. 30(12), 123003 (2009).
[Crossref]

Zuo, P.

C. Du, Z. Ma, J. Zhou, T. Lu, Y. Jiang, P. Zuo, H. Jia, and H. Chen, “Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption,” Appl. Phys. Lett. 105(7), 071108 (2014).
[Crossref]

Appl. Phys. Express (2)

S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, “InGaN light-emitting diodes on c-face sapphire substrates in green gap spectral range,” Appl. Phys. Express 6(11), 111004 (2013).
[Crossref]

H. J. Li, P. P. Li, J. J. Kang, Z. Li, Y. Y. Zhang, Z. Li, J. Li, X. Y. Yi, J. M. Li, and G. H. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

Appl. Phys. Lett. (10)

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]

K. T. Delaney, P. Rinke, and C. G. Van de Walle, “Auger recombination rates in nitrides from first principles,” Appl. Phys. Lett. 94(19), 191109 (2009).
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N. Duxbury, U. Bangert, P. Dawson, E. J. Thrush, W. Van der Stricht, K. Jacobs, and I. Moerman, “Indium segregation in InGaN quantum-well structures,” Appl. Phys. Lett. 76(12), 1600 (2000).
[Crossref]

Y. Chen, T. Takeuchi, H. Amano, I. Akasaki, N. Yamada, Y. Kaneko, and S. Y. Wang, “Pit formation in GaInN quantum wells,” Appl. Phys. Lett. 72(6), 710 (1998).
[Crossref]

H. K. Cho, J. Y. Lee, G. M. Yang, and C. S. Kim, “Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density,” Appl. Phys. Lett. 79(2), 215 (2001).
[Crossref]

P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, P. DenBaars, and J. S. Speck, “Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films,” Appl. Phys. Lett. 83(4), 674 (2003).
[Crossref]

C. Du, Z. Ma, J. Zhou, T. Lu, Y. Jiang, P. Zuo, H. Jia, and H. Chen, “Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption,” Appl. Phys. Lett. 105(7), 071108 (2014).
[Crossref]

N. Zhang, Z. Liu, T. B. Wei, L. Zhang, X. C. Wei, X. D. Wang, H. X. Lu, J. M. Li, and J. X. Wang, “Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes,” Appl. Phys. Lett. 100(5), 053504 (2012).
[Crossref]

Y. Y. Zhang and Y. A. Yin, “Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer,” Appl. Phys. Lett. 99(22), 221103 (2011).
[Crossref]

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Curr. Appl. Phys. (1)

M. Y. Ryu, C. Q. Chen, J. S. Kim, and M. Asif Khan, “Optical characterization of quaternary AlInGaN epilayer and multiple quantum wells grown by a pulsed metalorganic chemical vapor deposition,” Curr. Appl. Phys. 11(2), 231–235 (2011).
[Crossref]

IEEE J. Quantum Electron. (1)

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

IEEE Photonics Technol. Lett. (1)

J. K. Sheu, G. C. Chi, and M. J. Jou, “Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer,” IEEE Photonics Technol. Lett. 13(11), 1164–1166 (2001).
[Crossref]

IEEE Sel. Top. Quantum Electron. (1)

M. H. Crawford, “LEDs for solid-state lighting: performance challenges and recent advances,” IEEE Sel. Top. Quantum Electron. 15(4), 1028–1040 (2009).
[Crossref]

J. Appl. Phys. (2)

T. Kuroda and A. Tackeuchi, “Influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN quantum wells,” J. Appl. Phys. 92(6), 3071 (2002).
[Crossref]

C. Lu, L. Wang, J. Lu, R. Li, L. Liu, D. Li, N. Liu, L. Li, W. Cao, W. Yang, W. Chen, W. Du, C.-T. Lee, and X. Hu, “Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents,” J. Appl. Phys. 113(1), 013102 (2013).
[Crossref]

J. Cryst. Growth (1)

K.-M. Song, P.-G. Kang, H.-S. Shin, J.-M. Kim, W.-K. Park, C.-G. Ko, H.-W. Shim, and D. Ho Yoon, “Influence of AlGaN/GaN/InGaN superlattice on the characteristics of LEDs grown by metalorganic chemical vapor deposition,” J. Cryst. Growth 312(20), 2847–2851 (2010).
[Crossref]

J. Disp. Technol. (1)

M. R. Krames, O. B. Shchekin, R. M. Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
[Crossref]

J. Phys. D Appl. Phys. (1)

H. Masui, J. Sonoda, N. Pfaff, I. Koslow, S. Nakamura, and S. P. DenBaars, “Quantum-confined stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes,” J. Phys. D Appl. Phys. 41(16), 165105 (2008).
[Crossref]

J. Semicond. (1)

Z. Xu, J. Zhang, H. Duan, Z. Zhang, Q. Zhu, H. Xu, and Y. Hao, “Stress, structural and electrical properties of Si-doped GaN film grown by MOCVD,” J. Semicond. 30(12), 123003 (2009).
[Crossref]

J. Vac. Sci. Technol. B (1)

M. A. Hoffbauer, T. L. Williamson, J. J. Williams, J. L. Fordham, K. M. Yu, W. Walukiewicz, and L. A. Reichertz, “In-rich InGaN thin films: progress on growth, compositional uniformity, and doping for device applications,” J. Vac. Sci. Technol. B 31(3), 03C114 (2013).
[Crossref]

Opt. Express (2)

Opt. Lett. (1)

Phys. Status Solidi., C Curr. Top. Solid State Phys. (3)

T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jonen, H. Bremers, U. Rossow, and A. Hangleiter, “Origin of the “green gap”: increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2170–2172 (2011).
[Crossref]

R. Hashimoto, J. I. Hwang, S. Saito, and S. Nunoue, “High-efficiency green-yellow light-emitting diodes grown on sapphire (0001) substrate,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 10(11), 1529–1532 (2013).
[Crossref]

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. V. Kryzhanovskaya, V. S. Sizov, M. A. Synitsin, E. V. Yakovlev, A. E. Chernyakov, A. L. Zakgeim, N. A. Cherkashin, and M. Hytch, “InGaN/GaN short-period superlattices: synthesis, properties, applications,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 8(7–8), 2308–2310 (2011).
[Crossref]

Semiconductors (1)

V. S. Sizov, A. F. Tsatsulnikov, A. V. Sakharov, W. V. Lundin, E. E. Zavarin, N. A. Cherkashin, M. J. Hytch, A. E. Nikolaev, A. M. Mintairovd, Y. He, and J. L. Merz, “The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes,” Semiconductors 44(7), 924–930 (2010).
[Crossref]

Solid-State Electron. (1)

N. Nanhui, W. Huaibing, L. Jianping, L. Naixin, X. Yanhui, H. Jun, D. Jun, and S. Guangdi, “Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction,” Solid-State Electron. 51(6), 860–864 (2007).
[Crossref]

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Figures (7)

Fig. 1
Fig. 1

TEM image with an inset of the GSL structure for the SiGSL-LED sample.

Fig. 2
Fig. 2

FE-SEM images of the (a) C-LED, (b) unGSL-LED, and (c) SiGSL-LED.

Fig. 3
Fig. 3

HRXRD spectra of (0002) diffractions for the LED samples, where the inset is a magnified view.

Fig. 4
Fig. 4

(a) PL spectra at RT, where the inset is the 10K PL spectra, and (b) PL intensity ratios of RT to 10K for the LED samples, where a dotted line is only a guide for the eyes.

Fig. 5
Fig. 5

TRPL decay curves of the LED samples measured at (a) 10K and (b) RT.

Fig. 6
Fig. 6

(a) I-V curves for LED samples, and (b) light output powers for C-LED, unGSL-LED and SiGSL-LED at injection current from 2 to 200 mA.

Fig. 7
Fig. 7

Summary on the peak wavelengths for the LED samples with respect to currents ranging from 2 to 200 mA, where the inset is the EL spectra for the LED samples at injection current of 20 mA.

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