Abstract

We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at −1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm wavelength. 56 Gbps on-off-keying data reception is demonstrated with clear open eye diagrams in both the C-band and O-band.

© 2016 Optical Society of America

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References

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    [Crossref]
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    [Crossref] [PubMed]

2015 (3)

2014 (1)

2013 (2)

2012 (2)

2011 (2)

2009 (2)

L. Vivien, J. Osmond, J. M. Fédéli, D. Marris-Morini, P. Crozat, J. F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Express 17(8), 6252–6257 (2009).
[Crossref] [PubMed]

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[Crossref]

2007 (2)

Absil, P.

H. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, G. Roelkens, and J. Van Campenhout, “High responsivity low-voltage 28Gb/s Ge p-i-n photodetector with silicon contacts,” J. Lightwave Technol. 33(4), 820–824 (2015).
[Crossref]

P. De Heyn, J. De Coster, P. Verheyen, G. Lepage, M. Pantouvaki, P. Absil, W. Bogaerts, J. Van Campenhout, and D. Van Thourhout, “Fabrication-tolerant four-channel wavelength-division-multiplexing filter based on collectively tuned Si microrings,” J. Lightwave Technol. 31(16), 2785–2792 (2013).
[Crossref]

M. Pantouvaki, P. Verheyen, G. Lepage, J. De Coster, H. Yu, P. De Heyn, P. Absil, and J. Van Campenhout, “20Gb/s silicon ring modulator co-integrated with a Ge monitor photodetector,” in ECOC Conference (2013), paper We.3.B.2.
[Crossref]

P. Verheyen, M. Pantouvaki, J. Van Campenhout, P. Absil, H. Chen, P. De Heyn, G. Lepage, J. De Coster, P. Dumon, A. Masood, D. Van Thourhout, R. Baets, and W. Bogaerts, “Highly uniform 25 Gb/s Si photonics platform for high-density, low-power WDM optical interconnects,” in Integr. Photon. Res., Silicon Nanophoton. Conf. (2014), paper IW3A.4.
[Crossref]

Asghari, M.

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[Crossref]

Baehr-Jones, T.

Baets, R.

P. Verheyen, M. Pantouvaki, J. Van Campenhout, P. Absil, H. Chen, P. De Heyn, G. Lepage, J. De Coster, P. Dumon, A. Masood, D. Van Thourhout, R. Baets, and W. Bogaerts, “Highly uniform 25 Gb/s Si photonics platform for high-density, low-power WDM optical interconnects,” in Integr. Photon. Res., Silicon Nanophoton. Conf. (2014), paper IW3A.4.
[Crossref]

Bergman, K.

Bogaerts, W.

P. De Heyn, J. De Coster, P. Verheyen, G. Lepage, M. Pantouvaki, P. Absil, W. Bogaerts, J. Van Campenhout, and D. Van Thourhout, “Fabrication-tolerant four-channel wavelength-division-multiplexing filter based on collectively tuned Si microrings,” J. Lightwave Technol. 31(16), 2785–2792 (2013).
[Crossref]

P. Verheyen, M. Pantouvaki, J. Van Campenhout, P. Absil, H. Chen, P. De Heyn, G. Lepage, J. De Coster, P. Dumon, A. Masood, D. Van Thourhout, R. Baets, and W. Bogaerts, “Highly uniform 25 Gb/s Si photonics platform for high-density, low-power WDM optical interconnects,” in Integr. Photon. Res., Silicon Nanophoton. Conf. (2014), paper IW3A.4.
[Crossref]

Capellini, G.

Cassan, E.

Chen, H.

H. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, G. Roelkens, and J. Van Campenhout, “High responsivity low-voltage 28Gb/s Ge p-i-n photodetector with silicon contacts,” J. Lightwave Technol. 33(4), 820–824 (2015).
[Crossref]

P. Verheyen, M. Pantouvaki, J. Van Campenhout, P. Absil, H. Chen, P. De Heyn, G. Lepage, J. De Coster, P. Dumon, A. Masood, D. Van Thourhout, R. Baets, and W. Bogaerts, “Highly uniform 25 Gb/s Si photonics platform for high-density, low-power WDM optical interconnects,” in Integr. Photon. Res., Silicon Nanophoton. Conf. (2014), paper IW3A.4.
[Crossref]

Chetrit, Y.

Cohen, R.

Crozat, P.

Cunningham, J.

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[Crossref]

Cunningham, J. E.

Damlencourt, J. F.

Davids, P. S.

De Coster, J.

H. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, G. Roelkens, and J. Van Campenhout, “High responsivity low-voltage 28Gb/s Ge p-i-n photodetector with silicon contacts,” J. Lightwave Technol. 33(4), 820–824 (2015).
[Crossref]

P. De Heyn, J. De Coster, P. Verheyen, G. Lepage, M. Pantouvaki, P. Absil, W. Bogaerts, J. Van Campenhout, and D. Van Thourhout, “Fabrication-tolerant four-channel wavelength-division-multiplexing filter based on collectively tuned Si microrings,” J. Lightwave Technol. 31(16), 2785–2792 (2013).
[Crossref]

M. Pantouvaki, P. Verheyen, G. Lepage, J. De Coster, H. Yu, P. De Heyn, P. Absil, and J. Van Campenhout, “20Gb/s silicon ring modulator co-integrated with a Ge monitor photodetector,” in ECOC Conference (2013), paper We.3.B.2.
[Crossref]

P. Verheyen, M. Pantouvaki, J. Van Campenhout, P. Absil, H. Chen, P. De Heyn, G. Lepage, J. De Coster, P. Dumon, A. Masood, D. Van Thourhout, R. Baets, and W. Bogaerts, “Highly uniform 25 Gb/s Si photonics platform for high-density, low-power WDM optical interconnects,” in Integr. Photon. Res., Silicon Nanophoton. Conf. (2014), paper IW3A.4.
[Crossref]

De Heyn, P.

H. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, G. Roelkens, and J. Van Campenhout, “High responsivity low-voltage 28Gb/s Ge p-i-n photodetector with silicon contacts,” J. Lightwave Technol. 33(4), 820–824 (2015).
[Crossref]

P. De Heyn, J. De Coster, P. Verheyen, G. Lepage, M. Pantouvaki, P. Absil, W. Bogaerts, J. Van Campenhout, and D. Van Thourhout, “Fabrication-tolerant four-channel wavelength-division-multiplexing filter based on collectively tuned Si microrings,” J. Lightwave Technol. 31(16), 2785–2792 (2013).
[Crossref]

P. Verheyen, M. Pantouvaki, J. Van Campenhout, P. Absil, H. Chen, P. De Heyn, G. Lepage, J. De Coster, P. Dumon, A. Masood, D. Van Thourhout, R. Baets, and W. Bogaerts, “Highly uniform 25 Gb/s Si photonics platform for high-density, low-power WDM optical interconnects,” in Integr. Photon. Res., Silicon Nanophoton. Conf. (2014), paper IW3A.4.
[Crossref]

M. Pantouvaki, P. Verheyen, G. Lepage, J. De Coster, H. Yu, P. De Heyn, P. Absil, and J. Van Campenhout, “20Gb/s silicon ring modulator co-integrated with a Ge monitor photodetector,” in ECOC Conference (2013), paper We.3.B.2.
[Crossref]

DeRose, C. T.

Dong, P.

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[Crossref]

Duan, N.

T.-Y. Liow, N. Duan, A. E.-J. Lim, X. Tu, M. Yu, and G.-Q. Lo, “Waveguide Ge/Si avalanche photodetector with a unique low-height-profile device structure,” in Opt. Fiber Commun. Conf., (2014), paper M2G.6.
[Crossref]

Dumon, P.

P. Verheyen, M. Pantouvaki, J. Van Campenhout, P. Absil, H. Chen, P. De Heyn, G. Lepage, J. De Coster, P. Dumon, A. Masood, D. Van Thourhout, R. Baets, and W. Bogaerts, “Highly uniform 25 Gb/s Si photonics platform for high-density, low-power WDM optical interconnects,” in Integr. Photon. Res., Silicon Nanophoton. Conf. (2014), paper IW3A.4.
[Crossref]

Fédéli, J. M.

Feng, D.

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[Crossref]

Feng, N.-N.

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[Crossref]

Fisher, M.

Fong, J.

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[Crossref]

Going, R.

Gould, M.

Hartmann, J. M.

Hochberg, M.

Hsu, K.

Kimerling, L. C.

Knoll, D.

Koch, T. L.

Kopp, C.

Krishnamoorthy, A. V.

G. Li, Y. Luo, X. Zheng, G. Masini, A. Mekis, S. Sahni, H. Thacker, J. Yao, I. Shubin, K. Raj, J. E. Cunningham, and A. V. Krishnamoorthy, “Improving CMOS-compatible Germanium photodetectors,” Opt. Express 20(24), 26345–26350 (2012).
[Crossref] [PubMed]

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[Crossref]

Kroh, M.

Krune, E.

Kung, C.-C.

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[Crossref]

Laval, S.

Lecunff, Y.

Lepage, G.

H. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, G. Roelkens, and J. Van Campenhout, “High responsivity low-voltage 28Gb/s Ge p-i-n photodetector with silicon contacts,” J. Lightwave Technol. 33(4), 820–824 (2015).
[Crossref]

P. De Heyn, J. De Coster, P. Verheyen, G. Lepage, M. Pantouvaki, P. Absil, W. Bogaerts, J. Van Campenhout, and D. Van Thourhout, “Fabrication-tolerant four-channel wavelength-division-multiplexing filter based on collectively tuned Si microrings,” J. Lightwave Technol. 31(16), 2785–2792 (2013).
[Crossref]

M. Pantouvaki, P. Verheyen, G. Lepage, J. De Coster, H. Yu, P. De Heyn, P. Absil, and J. Van Campenhout, “20Gb/s silicon ring modulator co-integrated with a Ge monitor photodetector,” in ECOC Conference (2013), paper We.3.B.2.
[Crossref]

P. Verheyen, M. Pantouvaki, J. Van Campenhout, P. Absil, H. Chen, P. De Heyn, G. Lepage, J. De Coster, P. Dumon, A. Masood, D. Van Thourhout, R. Baets, and W. Bogaerts, “Highly uniform 25 Gb/s Si photonics platform for high-density, low-power WDM optical interconnects,” in Integr. Photon. Res., Silicon Nanophoton. Conf. (2014), paper IW3A.4.
[Crossref]

Li, G.

Liang, H.

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[Crossref]

Liao, S.

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[Crossref]

Lim, A. E.-J.

Liow, T.-Y.

T.-Y. Liow, N. Duan, A. E.-J. Lim, X. Tu, M. Yu, and G.-Q. Lo, “Waveguide Ge/Si avalanche photodetector with a unique low-height-profile device structure,” in Opt. Fiber Commun. Conf., (2014), paper M2G.6.
[Crossref]

Lischke, S.

Liu, J.

Liu, Y.

Lo, G.-Q.

Loo, J.

Luo, Y.

Magill, P.

Mai, A.

Mai, C.

Marris-Morini, D.

Masini, G.

Masood, A.

P. Verheyen, M. Pantouvaki, J. Van Campenhout, P. Absil, H. Chen, P. De Heyn, G. Lepage, J. De Coster, P. Dumon, A. Masood, D. Van Thourhout, R. Baets, and W. Bogaerts, “Highly uniform 25 Gb/s Si photonics platform for high-density, low-power WDM optical interconnects,” in Integr. Photon. Res., Silicon Nanophoton. Conf. (2014), paper IW3A.4.
[Crossref]

Mekis, A.

Michel, J.

Morse, M. M.

Novack, A.

Ophir, N.

Osmond, J.

Pan, D.

Paniccia, M. J.

Pantouvaki, M.

P. De Heyn, J. De Coster, P. Verheyen, G. Lepage, M. Pantouvaki, P. Absil, W. Bogaerts, J. Van Campenhout, and D. Van Thourhout, “Fabrication-tolerant four-channel wavelength-division-multiplexing filter based on collectively tuned Si microrings,” J. Lightwave Technol. 31(16), 2785–2792 (2013).
[Crossref]

P. Verheyen, M. Pantouvaki, J. Van Campenhout, P. Absil, H. Chen, P. De Heyn, G. Lepage, J. De Coster, P. Dumon, A. Masood, D. Van Thourhout, R. Baets, and W. Bogaerts, “Highly uniform 25 Gb/s Si photonics platform for high-density, low-power WDM optical interconnects,” in Integr. Photon. Res., Silicon Nanophoton. Conf. (2014), paper IW3A.4.
[Crossref]

M. Pantouvaki, P. Verheyen, G. Lepage, J. De Coster, H. Yu, P. De Heyn, P. Absil, and J. Van Campenhout, “20Gb/s silicon ring modulator co-integrated with a Ge monitor photodetector,” in ECOC Conference (2013), paper We.3.B.2.
[Crossref]

Peczek, A.

Polzer, A.

Qian, W.

Raj, K.

Roelkens, G.

Rubin, D.

Sahni, S.

Sarid, G.

Seok, T. J.

Shafiiha, R.

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[Crossref]

Shubin, I.

Starbuck, A. L.

Streshinsky, M.

Sun, X.

Thacker, H.

Trotter, D. C.

Trusch, A.

Tu, X.

T.-Y. Liow, N. Duan, A. E.-J. Lim, X. Tu, M. Yu, and G.-Q. Lo, “Waveguide Ge/Si avalanche photodetector with a unique low-height-profile device structure,” in Opt. Fiber Commun. Conf., (2014), paper M2G.6.
[Crossref]

Van Campenhout, J.

H. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, G. Roelkens, and J. Van Campenhout, “High responsivity low-voltage 28Gb/s Ge p-i-n photodetector with silicon contacts,” J. Lightwave Technol. 33(4), 820–824 (2015).
[Crossref]

P. De Heyn, J. De Coster, P. Verheyen, G. Lepage, M. Pantouvaki, P. Absil, W. Bogaerts, J. Van Campenhout, and D. Van Thourhout, “Fabrication-tolerant four-channel wavelength-division-multiplexing filter based on collectively tuned Si microrings,” J. Lightwave Technol. 31(16), 2785–2792 (2013).
[Crossref]

P. Verheyen, M. Pantouvaki, J. Van Campenhout, P. Absil, H. Chen, P. De Heyn, G. Lepage, J. De Coster, P. Dumon, A. Masood, D. Van Thourhout, R. Baets, and W. Bogaerts, “Highly uniform 25 Gb/s Si photonics platform for high-density, low-power WDM optical interconnects,” in Integr. Photon. Res., Silicon Nanophoton. Conf. (2014), paper IW3A.4.
[Crossref]

M. Pantouvaki, P. Verheyen, G. Lepage, J. De Coster, H. Yu, P. De Heyn, P. Absil, and J. Van Campenhout, “20Gb/s silicon ring modulator co-integrated with a Ge monitor photodetector,” in ECOC Conference (2013), paper We.3.B.2.
[Crossref]

Van Thourhout, D.

P. De Heyn, J. De Coster, P. Verheyen, G. Lepage, M. Pantouvaki, P. Absil, W. Bogaerts, J. Van Campenhout, and D. Van Thourhout, “Fabrication-tolerant four-channel wavelength-division-multiplexing filter based on collectively tuned Si microrings,” J. Lightwave Technol. 31(16), 2785–2792 (2013).
[Crossref]

P. Verheyen, M. Pantouvaki, J. Van Campenhout, P. Absil, H. Chen, P. De Heyn, G. Lepage, J. De Coster, P. Dumon, A. Masood, D. Van Thourhout, R. Baets, and W. Bogaerts, “Highly uniform 25 Gb/s Si photonics platform for high-density, low-power WDM optical interconnects,” in Integr. Photon. Res., Silicon Nanophoton. Conf. (2014), paper IW3A.4.
[Crossref]

Verheyen, P.

H. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, G. Roelkens, and J. Van Campenhout, “High responsivity low-voltage 28Gb/s Ge p-i-n photodetector with silicon contacts,” J. Lightwave Technol. 33(4), 820–824 (2015).
[Crossref]

P. De Heyn, J. De Coster, P. Verheyen, G. Lepage, M. Pantouvaki, P. Absil, W. Bogaerts, J. Van Campenhout, and D. Van Thourhout, “Fabrication-tolerant four-channel wavelength-division-multiplexing filter based on collectively tuned Si microrings,” J. Lightwave Technol. 31(16), 2785–2792 (2013).
[Crossref]

P. Verheyen, M. Pantouvaki, J. Van Campenhout, P. Absil, H. Chen, P. De Heyn, G. Lepage, J. De Coster, P. Dumon, A. Masood, D. Van Thourhout, R. Baets, and W. Bogaerts, “Highly uniform 25 Gb/s Si photonics platform for high-density, low-power WDM optical interconnects,” in Integr. Photon. Res., Silicon Nanophoton. Conf. (2014), paper IW3A.4.
[Crossref]

M. Pantouvaki, P. Verheyen, G. Lepage, J. De Coster, H. Yu, P. De Heyn, P. Absil, and J. Van Campenhout, “20Gb/s silicon ring modulator co-integrated with a Ge monitor photodetector,” in ECOC Conference (2013), paper We.3.B.2.
[Crossref]

Vivien, L.

Voigt, K.

Wang, X.

Watts, M. R.

Wu, M. C.

Xuan, Z.

Yang, S.

Yang, Y.

Yao, J.

Yin, T.

Yu, H.

M. Pantouvaki, P. Verheyen, G. Lepage, J. De Coster, H. Yu, P. De Heyn, P. Absil, and J. Van Campenhout, “20Gb/s silicon ring modulator co-integrated with a Ge monitor photodetector,” in ECOC Conference (2013), paper We.3.B.2.
[Crossref]

Yu, M.

T.-Y. Liow, N. Duan, A. E.-J. Lim, X. Tu, M. Yu, and G.-Q. Lo, “Waveguide Ge/Si avalanche photodetector with a unique low-height-profile device structure,” in Opt. Fiber Commun. Conf., (2014), paper M2G.6.
[Crossref]

Zhang, Y.

Zheng, D.

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[Crossref]

Zheng, X.

Zimmermann, H.

Zimmermann, L.

Zortman, W. A.

Appl. Phys. Lett. (1)

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[Crossref]

J. Lightwave Technol. (2)

Opt. Express (11)

R. Going, T. J. Seok, J. Loo, K. Hsu, and M. C. Wu, “Germanium wrap-around photodetectors on Silicon photonics,” Opt. Express 23(9), 11975–11984 (2015).
[Crossref] [PubMed]

S. Lischke, D. Knoll, C. Mai, L. Zimmermann, A. Peczek, M. Kroh, A. Trusch, E. Krune, K. Voigt, and A. Mai, “High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode,” Opt. Express 23(21), 27213–27220 (2015).
[Crossref] [PubMed]

A. Novack, M. Gould, Y. Yang, Z. Xuan, M. Streshinsky, Y. Liu, G. Capellini, A. E.-J. Lim, G.-Q. Lo, T. Baehr-Jones, and M. Hochberg, “Germanium photodetector with 60 GHz bandwidth using inductive gain peaking,” Opt. Express 21(23), 28387–28393 (2013).
[Crossref] [PubMed]

Y. Zhang, S. Yang, Y. Yang, M. Gould, N. Ophir, A. E.-J. Lim, G.-Q. Lo, P. Magill, K. Bergman, T. Baehr-Jones, and M. Hochberg, “A high-responsivity photodetector absent metal-germanium direct contact,” Opt. Express 22(9), 11367–11375 (2014).
[Crossref] [PubMed]

J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si,” Opt. Express 15(18), 11272–11277 (2007).
[Crossref] [PubMed]

T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[Crossref] [PubMed]

L. Vivien, J. Osmond, J. M. Fédéli, D. Marris-Morini, P. Crozat, J. F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Express 17(8), 6252–6257 (2009).
[Crossref] [PubMed]

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

C. T. DeRose, D. C. Trotter, W. A. Zortman, A. L. Starbuck, M. Fisher, M. R. Watts, and P. S. Davids, “Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current,” Opt. Express 19(25), 24897–24904 (2011).
[Crossref] [PubMed]

L. Vivien, A. Polzer, D. Marris-Morini, J. Osmond, J. M. Hartmann, P. Crozat, E. Cassan, C. Kopp, H. Zimmermann, and J. M. Fédéli, “Zero-bias 40Gbit/s germanium waveguide photodetector on silicon,” Opt. Express 20(2), 1096–1101 (2012).
[Crossref] [PubMed]

G. Li, Y. Luo, X. Zheng, G. Masini, A. Mekis, S. Sahni, H. Thacker, J. Yao, I. Shubin, K. Raj, J. E. Cunningham, and A. V. Krishnamoorthy, “Improving CMOS-compatible Germanium photodetectors,” Opt. Express 20(24), 26345–26350 (2012).
[Crossref] [PubMed]

Other (3)

T.-Y. Liow, N. Duan, A. E.-J. Lim, X. Tu, M. Yu, and G.-Q. Lo, “Waveguide Ge/Si avalanche photodetector with a unique low-height-profile device structure,” in Opt. Fiber Commun. Conf., (2014), paper M2G.6.
[Crossref]

M. Pantouvaki, P. Verheyen, G. Lepage, J. De Coster, H. Yu, P. De Heyn, P. Absil, and J. Van Campenhout, “20Gb/s silicon ring modulator co-integrated with a Ge monitor photodetector,” in ECOC Conference (2013), paper We.3.B.2.
[Crossref]

P. Verheyen, M. Pantouvaki, J. Van Campenhout, P. Absil, H. Chen, P. De Heyn, G. Lepage, J. De Coster, P. Dumon, A. Masood, D. Van Thourhout, R. Baets, and W. Bogaerts, “Highly uniform 25 Gb/s Si photonics platform for high-density, low-power WDM optical interconnects,” in Integr. Photon. Res., Silicon Nanophoton. Conf. (2014), paper IW3A.4.
[Crossref]

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Figures (9)

Fig. 1
Fig. 1 (a) 3-D schematic of the Si-LPIN GePD. (b) Cross-section schematic of the Si-LPIN GePD with a 0.16 μm thick and 0.5 μm wide germanium layer.
Fig. 2
Fig. 2 (a) Simulated doping distribution in the Si-LPIN GePD using Sentaurus Process. (b) Simulated electric field distribution in the Si-LPIN GePD reported in this paper at –1 V using Sentaurus Device. (c) Simulated electric field distribution at –1 V for a Si-LPIN GePD with a 400 nm thick germanium layer using Sentaurus Device. The only difference between the 2 Si-LPIN GePD devices is the germanium layer thickness. The electric field direction is annotated in the graph.
Fig. 3
Fig. 3 (a) A typical I-V characteristic of a 14.2 μm long and 0.5 μm wide Si-LPIN GePD. (b) Variability plot of the wafer-scale dark current data of the Si-LPIN GePD at −1 V and −2 V. Contour plot of the wafer-scale responsivity data of the Si-LPIN GePD at (c) 1550 nm and (d) 1310 nm at −1 V.
Fig. 4
Fig. 4 Responsivity as a function of wavelength of the Si-LPIN GePD in (a) the C-band and (b) the O-band at −1.2 V bias.
Fig. 5
Fig. 5 Small-signal S21 transmission parameter as a function of frequency of the Si-LPIN GePD at (a) 1550 nm and (b) 1310 nm wavelength. (c) Variability plot of wafer-scale opto-electrical 3-dB bandwidth data. (d) Experimental and fitted real/imaginary part of the small-signal S22 reflection parameter. The inset is the equivalent circuit model used for the fitting. (e) Variability plot of the p-i-n junction capacitance data extracted from the fitting. (f) Variability plot of the series resistance data extracted from the fitting.
Fig. 6
Fig. 6 (a) Small-signal S21 transmission parameter as a function of frequency of the Si-LPIN GePD at 1550 nm. (b) Measured 3-dB opto-electrical bandwidth as a function of input optical power at 1550 nm.
Fig. 7
Fig. 7 The optical eye generated from a 1550 nm commercial LiNbO3 Mach-Zehnder modulator at (a) 50 Gb/s and (b) 56 Gb/s. The corresponding electrical eye from the Si-LPIN GePD at −1 V bias at (c) 50 Gb/s and (d) 56 Gb/s.
Fig. 8
Fig. 8 The optical eye generated from a 1310 nm commercial LiNbO3 Mach-Zehnder modulator at (a) 50 Gb/s and (b) 56 Gb/s. The corresponding electrical eye from the Si-LPIN GePD at −1 V bias at (c) 50 Gb/s and (d) 56 Gb/s.
Fig. 9
Fig. 9 (a) Small-signal S21 transmission parameters as a function of frequency at 1550 nm of the Si-LPIN GePD with a 400 nm thick Ge layer and a 160 nm thick Ge layer. (b) Responsivity as a function of wavelength in the C-band of the Si-LPIN GePD with a 400 nm thick Ge layer and a 160 nm thick Ge layer. The only difference between the 2 Si-LPIN GePD devices is the germanium layer thickness.

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