Abstract

The on-chip integration of optical waveguides with complementary metal-oxide-semiconductor (CMOS) transistors is the next generation technology for high-speed communications. The advance of such a technology requires a high-performance photodetector operating at communication wavelengths. However, silicon does not absorb photons at communication wavelengths because of its relatively large bandgap. Growing high quality small bandgap semiconductors on top of silicon is challenging due to lattice mismatch. An all silicon photonic CMOS technology is an attractive option. Here, we demonstrate a high-performance silicon phototransistor that operates at the communication wavelengths by two-photon absorption effect. To turn silicon into a light absorptive material at communication wavelengths, we have designed a sophisticated plasmonic antenna structure to increases the intensity of light in the silicon nanowire by 5 orders of magnitude. At the high light intensity, the light absorption in silicon is dominated by the two-photon absorption effect. The generated photocurrent is further amplified by the Si nanowire phototransistor, a section of which is doped to be a core-shell pn junction. Simulation results indicate that the device can achieve a responsivity of 2.4×104 A/W and a 3-dB bandwidth over 300 GHz. Successful development of such a device is important for the next generation high-speed communication technology.

© 2016 Optical Society of America

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References

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  1. M. Haurylau, G. Chen, H. Chen, J. Zhang, N. A. Nelson, D. H. Albonesi, E. G. Friedman, and P. M. Fauchet, “On-Chip Optical Interconnect Roadmap: Challenges and Critical Directions,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1699–1705 (2006).
    [Crossref]
  2. G. Chen, H. Chen, M. Haurylau, N. A. Nelson, D. H. Albonesi, P. M. Fauchet, and E. G. Friedman, “Predictions of CMOS compatible on-chip optical interconnect,” Integration 40(4), 434–446 (2007).
  3. G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III-V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010).
    [Crossref]
  4. L. Tang, S. E. Kocabas, S. Latif, A. K. Okyay, D. S. Ly-Gagnon, K. C. Saraswat, and D. A. B. Miller, “Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna,” Nat. Photonics 2(4), 226–229 (2008).
    [Crossref]
  5. J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010).
    [Crossref]
  6. B. Jalali, “Silicon photonics: Nonlinear optics in the mid-infrared,” Nat. Photonics 4(8), 506–508 (2010).
    [Crossref]
  7. M. Casalino, G. Coppola, M. Iodice, I. Rendina, and L. Sirleto, “Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives,” Sensors (Basel) 10(12), 10571–10600 (2010).
    [Crossref] [PubMed]
  8. R. Dekker, N. Usechak, M. Först, and A. Driessen, “Ultrafast nonlinear all-optical processes in silicon-on-insulator waveguides,” J. Phys. D Appl. Phys. 40(14), R249–R271 (2007).
    [Crossref]
  9. A. D. Bristow, N. Rotenberg, and H. M. van Driel, “Two-photon absorption and Kerr coefficients of silicon for 850–2200nm,” Appl. Phys. Lett. 90(19), 191104 (2007).
    [Crossref]
  10. L.-D. Haret, X. Checoury, Z. Han, P. Boucaud, S. Combrié, and A. De Rossi, “All-silicon photonic crystal photoconductor on silicon-on-insulator at telecom wavelength,” Opt. Express 18(23), 23965–23972 (2010).
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  15. N. C. Lindquist, P. Nagpal, K. M. McPeak, D. J. Norris, and S. H. Oh, “Engineering metallic nanostructures for plasmonics and nanophotonics,” Rep. Prog. Phys. 75(3), 036501 (2012).
    [Crossref] [PubMed]
  16. J. Kalbacova, R. D. Rodriguez, V. Desale, M. Schneider, I. Amin, R. Jordan, and D. R. T. Zahn, “Chemical stability of plasmon-active silver tips for tip-enhanced Raman spectroscopy,” Nanospectroscopy 1(1), 12–18 (2015).
    [Crossref]
  17. M. S. Ünlü, B. B. Goldberg, W. D. Herzog, D. Sun, and E. Towe, “Near-field optical beam induced current measurements on heterostructures,” Appl. Phys. Lett. 67(13), 1862–1864 (1995).
    [Crossref]
  18. J. D. Christesen, X. Zhang, C. W. Pinion, T. A. Celano, C. J. Flynn, and J. F. Cahoon, “Design principles for photovoltaic devices based on Si nanowires with axial or radial p-n junctions,” Nano Lett. 12(11), 6024–6029 (2012).
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2015 (1)

J. Kalbacova, R. D. Rodriguez, V. Desale, M. Schneider, I. Amin, R. Jordan, and D. R. T. Zahn, “Chemical stability of plasmon-active silver tips for tip-enhanced Raman spectroscopy,” Nanospectroscopy 1(1), 12–18 (2015).
[Crossref]

2014 (1)

S. L. Tan, X. Zhao, and Y. Dan, “High-sensitivity silicon nanowire phototransistors,” Proc. SPIE 9170, 917002 (2014).
[Crossref]

2012 (2)

N. C. Lindquist, P. Nagpal, K. M. McPeak, D. J. Norris, and S. H. Oh, “Engineering metallic nanostructures for plasmonics and nanophotonics,” Rep. Prog. Phys. 75(3), 036501 (2012).
[Crossref] [PubMed]

J. D. Christesen, X. Zhang, C. W. Pinion, T. A. Celano, C. J. Flynn, and J. F. Cahoon, “Design principles for photovoltaic devices based on Si nanowires with axial or radial p-n junctions,” Nano Lett. 12(11), 6024–6029 (2012).
[Crossref] [PubMed]

2011 (2)

2010 (5)

G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III-V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010).
[Crossref]

J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010).
[Crossref]

B. Jalali, “Silicon photonics: Nonlinear optics in the mid-infrared,” Nat. Photonics 4(8), 506–508 (2010).
[Crossref]

M. Casalino, G. Coppola, M. Iodice, I. Rendina, and L. Sirleto, “Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives,” Sensors (Basel) 10(12), 10571–10600 (2010).
[Crossref] [PubMed]

L.-D. Haret, X. Checoury, Z. Han, P. Boucaud, S. Combrié, and A. De Rossi, “All-silicon photonic crystal photoconductor on silicon-on-insulator at telecom wavelength,” Opt. Express 18(23), 23965–23972 (2010).
[Crossref] [PubMed]

2008 (1)

L. Tang, S. E. Kocabas, S. Latif, A. K. Okyay, D. S. Ly-Gagnon, K. C. Saraswat, and D. A. B. Miller, “Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna,” Nat. Photonics 2(4), 226–229 (2008).
[Crossref]

2007 (3)

G. Chen, H. Chen, M. Haurylau, N. A. Nelson, D. H. Albonesi, P. M. Fauchet, and E. G. Friedman, “Predictions of CMOS compatible on-chip optical interconnect,” Integration 40(4), 434–446 (2007).

R. Dekker, N. Usechak, M. Först, and A. Driessen, “Ultrafast nonlinear all-optical processes in silicon-on-insulator waveguides,” J. Phys. D Appl. Phys. 40(14), R249–R271 (2007).
[Crossref]

A. D. Bristow, N. Rotenberg, and H. M. van Driel, “Two-photon absorption and Kerr coefficients of silicon for 850–2200nm,” Appl. Phys. Lett. 90(19), 191104 (2007).
[Crossref]

2006 (1)

M. Haurylau, G. Chen, H. Chen, J. Zhang, N. A. Nelson, D. H. Albonesi, E. G. Friedman, and P. M. Fauchet, “On-Chip Optical Interconnect Roadmap: Challenges and Critical Directions,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1699–1705 (2006).
[Crossref]

2005 (1)

T. Ishi, J. Fujikata, K. Makita, T. Baba, and K. Ohashi, “Si nano-photodiode with a surface plasmon antenna,” Jpn. J. Appl. Phys. 44(123L), L364–L366 (2005).
[Crossref]

1995 (1)

M. S. Ünlü, B. B. Goldberg, W. D. Herzog, D. Sun, and E. Towe, “Near-field optical beam induced current measurements on heterostructures,” Appl. Phys. Lett. 67(13), 1862–1864 (1995).
[Crossref]

Albonesi, D. H.

G. Chen, H. Chen, M. Haurylau, N. A. Nelson, D. H. Albonesi, P. M. Fauchet, and E. G. Friedman, “Predictions of CMOS compatible on-chip optical interconnect,” Integration 40(4), 434–446 (2007).

M. Haurylau, G. Chen, H. Chen, J. Zhang, N. A. Nelson, D. H. Albonesi, E. G. Friedman, and P. M. Fauchet, “On-Chip Optical Interconnect Roadmap: Challenges and Critical Directions,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1699–1705 (2006).
[Crossref]

Amin, I.

J. Kalbacova, R. D. Rodriguez, V. Desale, M. Schneider, I. Amin, R. Jordan, and D. R. T. Zahn, “Chemical stability of plasmon-active silver tips for tip-enhanced Raman spectroscopy,” Nanospectroscopy 1(1), 12–18 (2015).
[Crossref]

Baba, T.

T. Ishi, J. Fujikata, K. Makita, T. Baba, and K. Ohashi, “Si nano-photodiode with a surface plasmon antenna,” Jpn. J. Appl. Phys. 44(123L), L364–L366 (2005).
[Crossref]

Boucaud, P.

Bowers, J.

G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III-V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010).
[Crossref]

Bristow, A. D.

A. D. Bristow, N. Rotenberg, and H. M. van Driel, “Two-photon absorption and Kerr coefficients of silicon for 850–2200nm,” Appl. Phys. Lett. 90(19), 191104 (2007).
[Crossref]

Cahoon, J. F.

J. D. Christesen, X. Zhang, C. W. Pinion, T. A. Celano, C. J. Flynn, and J. F. Cahoon, “Design principles for photovoltaic devices based on Si nanowires with axial or radial p-n junctions,” Nano Lett. 12(11), 6024–6029 (2012).
[Crossref] [PubMed]

Casalino, M.

M. Casalino, G. Coppola, M. Iodice, I. Rendina, and L. Sirleto, “Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives,” Sensors (Basel) 10(12), 10571–10600 (2010).
[Crossref] [PubMed]

Celano, T. A.

J. D. Christesen, X. Zhang, C. W. Pinion, T. A. Celano, C. J. Flynn, and J. F. Cahoon, “Design principles for photovoltaic devices based on Si nanowires with axial or radial p-n junctions,” Nano Lett. 12(11), 6024–6029 (2012).
[Crossref] [PubMed]

Checoury, X.

Chen, G.

G. Chen, H. Chen, M. Haurylau, N. A. Nelson, D. H. Albonesi, P. M. Fauchet, and E. G. Friedman, “Predictions of CMOS compatible on-chip optical interconnect,” Integration 40(4), 434–446 (2007).

M. Haurylau, G. Chen, H. Chen, J. Zhang, N. A. Nelson, D. H. Albonesi, E. G. Friedman, and P. M. Fauchet, “On-Chip Optical Interconnect Roadmap: Challenges and Critical Directions,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1699–1705 (2006).
[Crossref]

Chen, H.

G. Chen, H. Chen, M. Haurylau, N. A. Nelson, D. H. Albonesi, P. M. Fauchet, and E. G. Friedman, “Predictions of CMOS compatible on-chip optical interconnect,” Integration 40(4), 434–446 (2007).

M. Haurylau, G. Chen, H. Chen, J. Zhang, N. A. Nelson, D. H. Albonesi, E. G. Friedman, and P. M. Fauchet, “On-Chip Optical Interconnect Roadmap: Challenges and Critical Directions,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1699–1705 (2006).
[Crossref]

Christesen, J. D.

J. D. Christesen, X. Zhang, C. W. Pinion, T. A. Celano, C. J. Flynn, and J. F. Cahoon, “Design principles for photovoltaic devices based on Si nanowires with axial or radial p-n junctions,” Nano Lett. 12(11), 6024–6029 (2012).
[Crossref] [PubMed]

Combrié, S.

Coppola, G.

M. Casalino, G. Coppola, M. Iodice, I. Rendina, and L. Sirleto, “Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives,” Sensors (Basel) 10(12), 10571–10600 (2010).
[Crossref] [PubMed]

Crozier, K. B.

Dan, Y.

S. L. Tan, X. Zhao, and Y. Dan, “High-sensitivity silicon nanowire phototransistors,” Proc. SPIE 9170, 917002 (2014).
[Crossref]

De Rossi, A.

Dekker, R.

R. Dekker, N. Usechak, M. Först, and A. Driessen, “Ultrafast nonlinear all-optical processes in silicon-on-insulator waveguides,” J. Phys. D Appl. Phys. 40(14), R249–R271 (2007).
[Crossref]

Desale, V.

J. Kalbacova, R. D. Rodriguez, V. Desale, M. Schneider, I. Amin, R. Jordan, and D. R. T. Zahn, “Chemical stability of plasmon-active silver tips for tip-enhanced Raman spectroscopy,” Nanospectroscopy 1(1), 12–18 (2015).
[Crossref]

Driessen, A.

R. Dekker, N. Usechak, M. Först, and A. Driessen, “Ultrafast nonlinear all-optical processes in silicon-on-insulator waveguides,” J. Phys. D Appl. Phys. 40(14), R249–R271 (2007).
[Crossref]

Fang, A.

G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III-V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010).
[Crossref]

Fauchet, P. M.

G. Chen, H. Chen, M. Haurylau, N. A. Nelson, D. H. Albonesi, P. M. Fauchet, and E. G. Friedman, “Predictions of CMOS compatible on-chip optical interconnect,” Integration 40(4), 434–446 (2007).

M. Haurylau, G. Chen, H. Chen, J. Zhang, N. A. Nelson, D. H. Albonesi, E. G. Friedman, and P. M. Fauchet, “On-Chip Optical Interconnect Roadmap: Challenges and Critical Directions,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1699–1705 (2006).
[Crossref]

Flynn, C. J.

J. D. Christesen, X. Zhang, C. W. Pinion, T. A. Celano, C. J. Flynn, and J. F. Cahoon, “Design principles for photovoltaic devices based on Si nanowires with axial or radial p-n junctions,” Nano Lett. 12(11), 6024–6029 (2012).
[Crossref] [PubMed]

Först, M.

R. Dekker, N. Usechak, M. Först, and A. Driessen, “Ultrafast nonlinear all-optical processes in silicon-on-insulator waveguides,” J. Phys. D Appl. Phys. 40(14), R249–R271 (2007).
[Crossref]

Friedman, E. G.

G. Chen, H. Chen, M. Haurylau, N. A. Nelson, D. H. Albonesi, P. M. Fauchet, and E. G. Friedman, “Predictions of CMOS compatible on-chip optical interconnect,” Integration 40(4), 434–446 (2007).

M. Haurylau, G. Chen, H. Chen, J. Zhang, N. A. Nelson, D. H. Albonesi, E. G. Friedman, and P. M. Fauchet, “On-Chip Optical Interconnect Roadmap: Challenges and Critical Directions,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1699–1705 (2006).
[Crossref]

Fujikata, J.

T. Ishi, J. Fujikata, K. Makita, T. Baba, and K. Ohashi, “Si nano-photodiode with a surface plasmon antenna,” Jpn. J. Appl. Phys. 44(123L), L364–L366 (2005).
[Crossref]

Goldberg, B. B.

M. S. Ünlü, B. B. Goldberg, W. D. Herzog, D. Sun, and E. Towe, “Near-field optical beam induced current measurements on heterostructures,” Appl. Phys. Lett. 67(13), 1862–1864 (1995).
[Crossref]

Han, Z.

Haret, L.-D.

Haurylau, M.

G. Chen, H. Chen, M. Haurylau, N. A. Nelson, D. H. Albonesi, P. M. Fauchet, and E. G. Friedman, “Predictions of CMOS compatible on-chip optical interconnect,” Integration 40(4), 434–446 (2007).

M. Haurylau, G. Chen, H. Chen, J. Zhang, N. A. Nelson, D. H. Albonesi, E. G. Friedman, and P. M. Fauchet, “On-Chip Optical Interconnect Roadmap: Challenges and Critical Directions,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1699–1705 (2006).
[Crossref]

He, X.

Herzog, W. D.

M. S. Ünlü, B. B. Goldberg, W. D. Herzog, D. Sun, and E. Towe, “Near-field optical beam induced current measurements on heterostructures,” Appl. Phys. Lett. 67(13), 1862–1864 (1995).
[Crossref]

Iodice, M.

M. Casalino, G. Coppola, M. Iodice, I. Rendina, and L. Sirleto, “Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives,” Sensors (Basel) 10(12), 10571–10600 (2010).
[Crossref] [PubMed]

Ishi, T.

T. Ishi, J. Fujikata, K. Makita, T. Baba, and K. Ohashi, “Si nano-photodiode with a surface plasmon antenna,” Jpn. J. Appl. Phys. 44(123L), L364–L366 (2005).
[Crossref]

Jalali, B.

B. Jalali, “Silicon photonics: Nonlinear optics in the mid-infrared,” Nat. Photonics 4(8), 506–508 (2010).
[Crossref]

Jones, R.

G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III-V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010).
[Crossref]

Jordan, R.

J. Kalbacova, R. D. Rodriguez, V. Desale, M. Schneider, I. Amin, R. Jordan, and D. R. T. Zahn, “Chemical stability of plasmon-active silver tips for tip-enhanced Raman spectroscopy,” Nanospectroscopy 1(1), 12–18 (2015).
[Crossref]

Kalbacova, J.

J. Kalbacova, R. D. Rodriguez, V. Desale, M. Schneider, I. Amin, R. Jordan, and D. R. T. Zahn, “Chemical stability of plasmon-active silver tips for tip-enhanced Raman spectroscopy,” Nanospectroscopy 1(1), 12–18 (2015).
[Crossref]

Kimerling, L. C.

J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010).
[Crossref]

Kocabas, S. E.

L. Tang, S. E. Kocabas, S. Latif, A. K. Okyay, D. S. Ly-Gagnon, K. C. Saraswat, and D. A. B. Miller, “Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna,” Nat. Photonics 2(4), 226–229 (2008).
[Crossref]

Koch, B.

G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III-V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010).
[Crossref]

Latif, S.

L. Tang, S. E. Kocabas, S. Latif, A. K. Okyay, D. S. Ly-Gagnon, K. C. Saraswat, and D. A. B. Miller, “Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna,” Nat. Photonics 2(4), 226–229 (2008).
[Crossref]

Liang, D.

G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III-V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010).
[Crossref]

Lindquist, N. C.

N. C. Lindquist, P. Nagpal, K. M. McPeak, D. J. Norris, and S. H. Oh, “Engineering metallic nanostructures for plasmonics and nanophotonics,” Rep. Prog. Phys. 75(3), 036501 (2012).
[Crossref] [PubMed]

Liu, J.

J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010).
[Crossref]

Liu, L.

G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III-V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010).
[Crossref]

Ly-Gagnon, D. S.

L. Tang, S. E. Kocabas, S. Latif, A. K. Okyay, D. S. Ly-Gagnon, K. C. Saraswat, and D. A. B. Miller, “Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna,” Nat. Photonics 2(4), 226–229 (2008).
[Crossref]

Makita, K.

T. Ishi, J. Fujikata, K. Makita, T. Baba, and K. Ohashi, “Si nano-photodiode with a surface plasmon antenna,” Jpn. J. Appl. Phys. 44(123L), L364–L366 (2005).
[Crossref]

McPeak, K. M.

N. C. Lindquist, P. Nagpal, K. M. McPeak, D. J. Norris, and S. H. Oh, “Engineering metallic nanostructures for plasmonics and nanophotonics,” Rep. Prog. Phys. 75(3), 036501 (2012).
[Crossref] [PubMed]

Michel, J.

J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010).
[Crossref]

Miller, D. A. B.

L. Tang, S. E. Kocabas, S. Latif, A. K. Okyay, D. S. Ly-Gagnon, K. C. Saraswat, and D. A. B. Miller, “Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna,” Nat. Photonics 2(4), 226–229 (2008).
[Crossref]

Nagpal, P.

N. C. Lindquist, P. Nagpal, K. M. McPeak, D. J. Norris, and S. H. Oh, “Engineering metallic nanostructures for plasmonics and nanophotonics,” Rep. Prog. Phys. 75(3), 036501 (2012).
[Crossref] [PubMed]

Nelson, N. A.

G. Chen, H. Chen, M. Haurylau, N. A. Nelson, D. H. Albonesi, P. M. Fauchet, and E. G. Friedman, “Predictions of CMOS compatible on-chip optical interconnect,” Integration 40(4), 434–446 (2007).

M. Haurylau, G. Chen, H. Chen, J. Zhang, N. A. Nelson, D. H. Albonesi, E. G. Friedman, and P. M. Fauchet, “On-Chip Optical Interconnect Roadmap: Challenges and Critical Directions,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1699–1705 (2006).
[Crossref]

Norris, D. J.

N. C. Lindquist, P. Nagpal, K. M. McPeak, D. J. Norris, and S. H. Oh, “Engineering metallic nanostructures for plasmonics and nanophotonics,” Rep. Prog. Phys. 75(3), 036501 (2012).
[Crossref] [PubMed]

Oh, S. H.

N. C. Lindquist, P. Nagpal, K. M. McPeak, D. J. Norris, and S. H. Oh, “Engineering metallic nanostructures for plasmonics and nanophotonics,” Rep. Prog. Phys. 75(3), 036501 (2012).
[Crossref] [PubMed]

Ohashi, K.

T. Ishi, J. Fujikata, K. Makita, T. Baba, and K. Ohashi, “Si nano-photodiode with a surface plasmon antenna,” Jpn. J. Appl. Phys. 44(123L), L364–L366 (2005).
[Crossref]

Okyay, A. K.

L. Tang, S. E. Kocabas, S. Latif, A. K. Okyay, D. S. Ly-Gagnon, K. C. Saraswat, and D. A. B. Miller, “Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna,” Nat. Photonics 2(4), 226–229 (2008).
[Crossref]

Pinion, C. W.

J. D. Christesen, X. Zhang, C. W. Pinion, T. A. Celano, C. J. Flynn, and J. F. Cahoon, “Design principles for photovoltaic devices based on Si nanowires with axial or radial p-n junctions,” Nano Lett. 12(11), 6024–6029 (2012).
[Crossref] [PubMed]

Rendina, I.

M. Casalino, G. Coppola, M. Iodice, I. Rendina, and L. Sirleto, “Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives,” Sensors (Basel) 10(12), 10571–10600 (2010).
[Crossref] [PubMed]

Rodriguez, R. D.

J. Kalbacova, R. D. Rodriguez, V. Desale, M. Schneider, I. Amin, R. Jordan, and D. R. T. Zahn, “Chemical stability of plasmon-active silver tips for tip-enhanced Raman spectroscopy,” Nanospectroscopy 1(1), 12–18 (2015).
[Crossref]

Roelkens, G.

G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III-V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010).
[Crossref]

Rotenberg, N.

A. D. Bristow, N. Rotenberg, and H. M. van Driel, “Two-photon absorption and Kerr coefficients of silicon for 850–2200nm,” Appl. Phys. Lett. 90(19), 191104 (2007).
[Crossref]

Saraswat, K. C.

L. Tang, S. E. Kocabas, S. Latif, A. K. Okyay, D. S. Ly-Gagnon, K. C. Saraswat, and D. A. B. Miller, “Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna,” Nat. Photonics 2(4), 226–229 (2008).
[Crossref]

Schneider, M.

J. Kalbacova, R. D. Rodriguez, V. Desale, M. Schneider, I. Amin, R. Jordan, and D. R. T. Zahn, “Chemical stability of plasmon-active silver tips for tip-enhanced Raman spectroscopy,” Nanospectroscopy 1(1), 12–18 (2015).
[Crossref]

Sirleto, L.

M. Casalino, G. Coppola, M. Iodice, I. Rendina, and L. Sirleto, “Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives,” Sensors (Basel) 10(12), 10571–10600 (2010).
[Crossref] [PubMed]

Sun, D.

M. S. Ünlü, B. B. Goldberg, W. D. Herzog, D. Sun, and E. Towe, “Near-field optical beam induced current measurements on heterostructures,” Appl. Phys. Lett. 67(13), 1862–1864 (1995).
[Crossref]

Tan, S. L.

S. L. Tan, X. Zhao, and Y. Dan, “High-sensitivity silicon nanowire phototransistors,” Proc. SPIE 9170, 917002 (2014).
[Crossref]

Tang, L.

L. Tang, S. E. Kocabas, S. Latif, A. K. Okyay, D. S. Ly-Gagnon, K. C. Saraswat, and D. A. B. Miller, “Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna,” Nat. Photonics 2(4), 226–229 (2008).
[Crossref]

Towe, E.

M. S. Ünlü, B. B. Goldberg, W. D. Herzog, D. Sun, and E. Towe, “Near-field optical beam induced current measurements on heterostructures,” Appl. Phys. Lett. 67(13), 1862–1864 (1995).
[Crossref]

Ünlü, M. S.

M. S. Ünlü, B. B. Goldberg, W. D. Herzog, D. Sun, and E. Towe, “Near-field optical beam induced current measurements on heterostructures,” Appl. Phys. Lett. 67(13), 1862–1864 (1995).
[Crossref]

Usechak, N.

R. Dekker, N. Usechak, M. Först, and A. Driessen, “Ultrafast nonlinear all-optical processes in silicon-on-insulator waveguides,” J. Phys. D Appl. Phys. 40(14), R249–R271 (2007).
[Crossref]

van Driel, H. M.

A. D. Bristow, N. Rotenberg, and H. M. van Driel, “Two-photon absorption and Kerr coefficients of silicon for 850–2200nm,” Appl. Phys. Lett. 90(19), 191104 (2007).
[Crossref]

Wang, D.

Yang, L.

Yang, T.

Zahn, D. R. T.

J. Kalbacova, R. D. Rodriguez, V. Desale, M. Schneider, I. Amin, R. Jordan, and D. R. T. Zahn, “Chemical stability of plasmon-active silver tips for tip-enhanced Raman spectroscopy,” Nanospectroscopy 1(1), 12–18 (2015).
[Crossref]

Zhang, J.

M. Haurylau, G. Chen, H. Chen, J. Zhang, N. A. Nelson, D. H. Albonesi, E. G. Friedman, and P. M. Fauchet, “On-Chip Optical Interconnect Roadmap: Challenges and Critical Directions,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1699–1705 (2006).
[Crossref]

Zhang, X.

J. D. Christesen, X. Zhang, C. W. Pinion, T. A. Celano, C. J. Flynn, and J. F. Cahoon, “Design principles for photovoltaic devices based on Si nanowires with axial or radial p-n junctions,” Nano Lett. 12(11), 6024–6029 (2012).
[Crossref] [PubMed]

Zhao, X.

S. L. Tan, X. Zhao, and Y. Dan, “High-sensitivity silicon nanowire phototransistors,” Proc. SPIE 9170, 917002 (2014).
[Crossref]

Appl. Phys. Lett. (2)

A. D. Bristow, N. Rotenberg, and H. M. van Driel, “Two-photon absorption and Kerr coefficients of silicon for 850–2200nm,” Appl. Phys. Lett. 90(19), 191104 (2007).
[Crossref]

M. S. Ünlü, B. B. Goldberg, W. D. Herzog, D. Sun, and E. Towe, “Near-field optical beam induced current measurements on heterostructures,” Appl. Phys. Lett. 67(13), 1862–1864 (1995).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

M. Haurylau, G. Chen, H. Chen, J. Zhang, N. A. Nelson, D. H. Albonesi, E. G. Friedman, and P. M. Fauchet, “On-Chip Optical Interconnect Roadmap: Challenges and Critical Directions,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1699–1705 (2006).
[Crossref]

Integration (1)

G. Chen, H. Chen, M. Haurylau, N. A. Nelson, D. H. Albonesi, P. M. Fauchet, and E. G. Friedman, “Predictions of CMOS compatible on-chip optical interconnect,” Integration 40(4), 434–446 (2007).

J. Phys. D Appl. Phys. (1)

R. Dekker, N. Usechak, M. Först, and A. Driessen, “Ultrafast nonlinear all-optical processes in silicon-on-insulator waveguides,” J. Phys. D Appl. Phys. 40(14), R249–R271 (2007).
[Crossref]

Jpn. J. Appl. Phys. (1)

T. Ishi, J. Fujikata, K. Makita, T. Baba, and K. Ohashi, “Si nano-photodiode with a surface plasmon antenna,” Jpn. J. Appl. Phys. 44(123L), L364–L366 (2005).
[Crossref]

Laser Photonics Rev. (1)

G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III-V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010).
[Crossref]

Nano Lett. (1)

J. D. Christesen, X. Zhang, C. W. Pinion, T. A. Celano, C. J. Flynn, and J. F. Cahoon, “Design principles for photovoltaic devices based on Si nanowires with axial or radial p-n junctions,” Nano Lett. 12(11), 6024–6029 (2012).
[Crossref] [PubMed]

Nanospectroscopy (1)

J. Kalbacova, R. D. Rodriguez, V. Desale, M. Schneider, I. Amin, R. Jordan, and D. R. T. Zahn, “Chemical stability of plasmon-active silver tips for tip-enhanced Raman spectroscopy,” Nanospectroscopy 1(1), 12–18 (2015).
[Crossref]

Nat. Photonics (3)

L. Tang, S. E. Kocabas, S. Latif, A. K. Okyay, D. S. Ly-Gagnon, K. C. Saraswat, and D. A. B. Miller, “Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna,” Nat. Photonics 2(4), 226–229 (2008).
[Crossref]

J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010).
[Crossref]

B. Jalali, “Silicon photonics: Nonlinear optics in the mid-infrared,” Nat. Photonics 4(8), 506–508 (2010).
[Crossref]

Opt. Express (3)

Proc. SPIE (1)

S. L. Tan, X. Zhao, and Y. Dan, “High-sensitivity silicon nanowire phototransistors,” Proc. SPIE 9170, 917002 (2014).
[Crossref]

Rep. Prog. Phys. (1)

N. C. Lindquist, P. Nagpal, K. M. McPeak, D. J. Norris, and S. H. Oh, “Engineering metallic nanostructures for plasmonics and nanophotonics,” Rep. Prog. Phys. 75(3), 036501 (2012).
[Crossref] [PubMed]

Sensors (Basel) (1)

M. Casalino, G. Coppola, M. Iodice, I. Rendina, and L. Sirleto, “Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives,” Sensors (Basel) 10(12), 10571–10600 (2010).
[Crossref] [PubMed]

Other (2)

H. Raether, Surface Plasmons on Smooth and Rough Surfaces and on Gratings. Springer (1988).

S. Donati, Photodetectors (Prentice Hall PTR, 1999).

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Figures (4)

Fig. 1
Fig. 1 Plasmonic antenna structure. 3-dimensional (3D) finite difference time domain (FDTD) simulations are performed using the FDTD module of Lumerical. Plane wave is launched perpendicularly from the top, as indicated by the propagation vector k → . r p is the period of the concentric grating rings. g and w are the length and width of the nanogap, respectively. l d and W d are the length and width of the tapered dipole arm, respectively, and l t is the tapered length. l f is the radius of the fan-rod antenna, and h f and W f are the corresponding rod’s length and width, respectively. h and h a are the thickness of the silicon and metal (silver) layers, respectively. L is the length of the SiNW. Top-left: top view. Bottom-left: cross-section cut along the line “1”. Right: close-up view of the center.

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Fig. 2
Fig. 2 (a) Geometrical parameters of the nanowire detector; (b) Distribution of normalized light intensity | E → | 2 / | E 0 → | 2 at the half thickness of the nanowire, where E 0 → is the electric field intensity of the incident light; (c) Absorption cross section (ACS) of the silicon nanowire after the enhancement. The resonant absorption peak is around 1310 nm in wavelength which is applicable for optical communications. Inset: ACS in decibels by coupling grating rings and fan-rod (black line), tapered dipole without gratings and fan-rod (blue line), and full structure of plasmonic antenna including grating rings, fan-rod and tapered dipole (red line).

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Fig. 3
Fig. 3 Design of the core-shell SiNW phototransistor. The n-type shell and p-type core structure makes a weakly depleted p-channel inside the nanogap. (a) Schematic of the device. (b) Photocurrent and dark current of the core-shell SiNW versus p-type background doping concentration. (c) Photoresponsivity of several devices in comparison. Red star line: core-shell nanowire phototransistor integrated with plasmonic antenna. Blue solid-dot line: core-shell nanowire phototransistor without plasmonic antenna. Black triangular line: axial pn junction SiNW photodiode integrated with plasmonic antenna. The incident light intensity is 0.1 mW c m −2 , and the doping concentrations are n=1× 10 19  c m −3 and p=1× 10 18  c m −3 .

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Fig. 4
Fig. 4 Frequensy response of SiNW phototransistors. The incident light intensity is 0.1 mW c m −2 and the bias voltage is fixed at 2 V.

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Tables (1)

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Table 1 Geometrical parameters of the plasmonic antennas integrated with Si nanowire detecto

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Equations (4)

Equations on this page are rendered with MathJax. Learn more.

α( I )= α 0 ( λ )+β×I
I= I 0 e −α( I )z
ΔI=| dI dz |Δz=I⋅α( I )⋅Δz
ΔI= α 0 ( λ )⋅I⋅Δz+β⋅ I 2 ⋅Δz

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