Abstract

In this paper, we report a sensitive lateral photovoltaic effect (LPE) in Fe3O4/3C-SiC Schottky junctions with a fast relaxation time at near-ultraviolet wavelengths. The rectifying behavior suggests that the large build-in electric field was formed in the Schottky junctions. This device has excellent position sensitivity as high as 67.8 mV mm−1 illuminated by a 405 nm laser. The optical relaxation time of the LPE is about 30 μs. The fast relaxation and high positional sensitivity of the LPE make the Fe3O4/3C-SiC junction a promising candidate for a wide range of ultraviolet/near-ultraviolet optoelectronic applications.

© 2016 Optical Society of America

Full Article  |  PDF Article
OSA Recommended Articles
High-performance position-sensitive detector based on the lateral photovoltaic effect in MoSe2/p-Si junctions

Xiaofeng Zhao, Lingrui Zhang, Qiying Gai, Chang Hu, and Xianjie Wang
Appl. Opt. 58(19) 5200-5205 (2019)

Ultrahigh position sensitivity and fast optical relaxation time of lateral photovoltaic effect in Sb2Se3/p-Si junctions

Yang Zhang, Yu Zhang, Tai Yao, Chang Hu, Yu Sui, and Xianjie Wang
Opt. Express 26(26) 34214-34223 (2018)

Infrared laser induced lateral photovoltaic effect observed in Cu2O nanoscale film

Liang Du and Hui Wang
Opt. Express 18(9) 9113-9118 (2010)

References

  • View by:
  • |
  • |
  • |

  1. J. T. Wallmark, “A new semiconductor photocell using lateral photoeffect,” Pro. IRE 45(4), 474–483 (1957).
    [Crossref]
  2. D. W. Boeringer and R. Tsu, “Lateral photovoltaic effect in porous silicon,” Appl. Phys. Lett. 65(18), 2332 (1994).
    [Crossref]
  3. B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537 (1986).
    [Crossref]
  4. J. P. Cascales, I. Martínez, D. Díaz, J. A. Rodrigo, and F. G. Aliev, “Transient lateral photovoltaic effect in patterned metal-oxide-semiconductor films,” Appl. Phys. Lett. 104(23), 231118 (2014).
    [Crossref]
  5. N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792 (1989).
    [Crossref]
  6. S. Qiao, Y. Liu, J. Liu, J. Chen, G. Yan, S. Wang, and G. Fu, “Large lateral photovoltaic effect in a-Si:H/c-Sip-i-n structure with the aid of bias voltage,” Appl. Phys. Express 8(12), 122201 (2015).
    [Crossref]
  7. S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co–SiO2–Si,” New J. Phys. 10(3), 033018 (2008).
    [Crossref]
  8. S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang, “The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures,” Opt. Express 16(6), 3798–3806 (2008).
    [Crossref] [PubMed]
  9. S. Liu, X. Xie, and H. Wang, “Lateral photovoltaic effect and electron transport observed in Cr nano-film,” Opt. Express 22(10), 11627–11632 (2014).
    [Crossref] [PubMed]
  10. S. Wang, W. Wang, L. Zou, X. Zhang, J. Cai, Z. Sun, B. Shen, and J. Sun, “Magnetic tuning of the photovoltaic effect in silicon-based Schottky junctions,” Adv. Mater. 26(47), 8059–8064 (2014).
    [Crossref] [PubMed]
  11. J. Henry and J. Livingstone, “Aging effects of Schottky barrier position sensitive detectors,” IEEE Sens. J. 6(6), 1557–1563 (2006).
    [Crossref]
  12. L. Du and H. Wang, “Infrared laser induced lateral photovoltaic effect observed in Cu2O nanoscale film,” Opt. Express 18(9), 9113–9118 (2010).
    [Crossref] [PubMed]
  13. C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express 17(24), 21712–21722 (2009).
    [Crossref] [PubMed]
  14. X. Wang, B. Song, M. Huo, Y. Song, Z. Lv, Y. Zhang, Y. Wang, Y. Song, J. Wen, Y. Sui, and J. Tang, “Fast and sensitive lateral photovoltaic effects in Fe3O4/Si Schottky junction,” RSC Advances 5(80), 65048–65051 (2015).
    [Crossref]
  15. http://www.hamamatsu.com/resources/pdf/ssd/s8673_kpsd1024e.pdf .
  16. G. Shoute, A. Afshar, T. Muneshwar, K. Cadien, and D. Barlage, “Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current,” Nat. Commun. 7, 10632 (2016).
    [Crossref] [PubMed]
  17. S. H. Park, G. Yuan, D. Chen, K. Xiong, J. Song, B. Leung, and J. Han, “Wide bandgap III-nitride nanomembranes for optoelectronic applications,” Nano Lett. 14(8), 4293–4298 (2014).
    [Crossref] [PubMed]
  18. J. Kunc, Y. Hu, J. Palmer, Z. Guo, J. Hankinson, S. H. Gamal, C. Berger, and W. A. de Heer, “Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions,” Nano Lett. 14(9), 5170–5175 (2014).
    [Crossref] [PubMed]
  19. X. Chen, H. Zhu, J. Cai, and Z. Wu, “High-performance 4H-SiC-based ultraviolet p-i-n photodetector,” J. Appl. Phys. 102(2), 024505 (2007).
    [Crossref]
  20. S. Tiwari, R. Prakash, R. J. Choudhary, and D. M. Phase, “Oriented growth of Fe3O4 thin film on crystalline and amorphous substrates by pulsed laser deposition,” J. Phys. D Appl. Phys. 40(16), 4943–4947 (2007).
    [Crossref]
  21. Z. Zhang and S. Satpathy, “Electron states, magnetism, and the Verwey transition in magnetite,” Phys. Rev. B Condens. Matter 44(24), 13319–13331 (1991).
    [Crossref] [PubMed]
  22. K.-J. Jin, H.-B. Lu, K. Zhao, C. Ge, M. He, and G.-Z. Yang, “Novel multifunctional properties induced by interface effects in perovskite oxide heterostructures,” Adv. Mater. 21(45), 4636–4640 (2009).
    [Crossref]
  23. S. Nishino, “Production of large-area single-crystal wafers of cubic SiC for semiconductor devices,” Appl. Phys. Lett. 42(5), 460 (1983).
    [Crossref]
  24. G. Brauer, W. Anwand, E. Nicht, J. Kuriplach, M. Sob, N. Wagner, P. G. Coleman, M. J. Puska, and T. Korhonen, “Evaluation of some basic positron-related characteristics of SiC,” Phys. Rev. B Condens. Matter 54(4), 2512–2517 (1996).
    [Crossref] [PubMed]
  25. M. Fonin, R. Pentcheva, Y. S. Dedkov, M. Sperlich, D. V. Vyalikh, M. Scheffler, U. Rüdiger, and G. Güntherodt, “Surface electronic structure of theFe3O4 (100): Evidence of a half-metal to metal transition,” Phys. Rev. B 72(10), 104436 (2005).
    [Crossref]
  26. H. Niu, C. Aoki, T. Matsuda, M. Takai, and M. Maeda, “A position-sensitive MOS device using lateral photovoltaic effect,” Jpn. J. Appl. Phys. 26(2), L35–L37 (1987).
    [Crossref]
  27. K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
    [Crossref]
  28. L. Liao, K.-J. Jin, C. Ge, C. Hu, H.-B. Lu, and G.-Z. Yang, “A theoretical study on the dynamic process of the lateral photovoltage in perovskite oxide heterostructures,” Appl. Phys. Lett. 96(6), 062116 (2010).
    [Crossref]
  29. C. Wang, K.-J. Jin, R.-Q. Zhao, H.-B. Lu, H.-Z. Guo, C. Ge, M. He, C. Wang, and G.-Z. Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
    [Crossref]
  30. J. K. Tang, J. B. Dai, K. Y. Wang, W. L. Zhou, N. Ruzycki, and U. Diebold, “'Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate,” J. Appl. Phys. 91(10), 8411 (2002).
    [Crossref]
  31. X. Wang, Y. Sui, J. Tang, C. Wang, X. Zhang, Z. Lu, Z. Liu, W. Su, X. Wei, and R. Yu, “Amplification of magnetoresistance of magnetite in an Fe3O4-SiO2-Si structure,” Appl. Phys. Lett. 92(1), 023502 (2008).
    [Crossref]
  32. X. Wang, X. Zhao, C. Hu, Y. Zhang, B. Song, L. Zhang, W. Liu, Z. Lv, Y. Zhang, J. Tang, Y. Sui, and B. Song, “Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction,” Appl. Phys. Lett. 109(2), 023502 (2016).
    [Crossref]
  33. N. S. Saks and A. K. Agarwal, “Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC,” Appl. Phys. Lett. 77(20), 3281 (2000).
    [Crossref]
  34. D. Reisinger, P. Majewski, M. Opel, L. Alff, and R. Gross, “Hall effect, magnetization, and conductivity of Fe3O4 epitaxial thin films,” Appl. Phys. Lett. 85(21), 4980 (2004).
    [Crossref]
  35. J. I. Pankowe, Optical Processes in Semiconductors (Academic, 1971).
  36. R. S. Markiewicz and L. A. Harris, “Two-dimensional resistivity of ultrathin metal films,” Phys. Rev. Lett. 46(17), 1149–1153 (1981).
    [Crossref]
  37. C. Yu and H. Wang, “Large near-infrared lateral photovoltaic effect observed in Co/Si metal-semiconductor structures,” Appl. Phys. Lett. 96(17), 171102 (2010).
    [Crossref]
  38. C. Yu and H. Wang, “Light-induced bipolar-resistance effect based on metal-oxide-semiconductor structures of Ti/SiO(2)/Si,” Adv. Mater. 22(9), 966–970 (2010).
    [Crossref] [PubMed]
  39. C. Yu and H. Wang, “Large lateral photovoltaic effect in metal-(oxide-) semiconductor structures,” Sensors (Basel) 10(11), 10155–10180 (2010).
    [Crossref] [PubMed]
  40. B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti,” Appl. Phys. Lett. 49(23), 1608 (1986).
    [Crossref]

2016 (2)

G. Shoute, A. Afshar, T. Muneshwar, K. Cadien, and D. Barlage, “Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current,” Nat. Commun. 7, 10632 (2016).
[Crossref] [PubMed]

X. Wang, X. Zhao, C. Hu, Y. Zhang, B. Song, L. Zhang, W. Liu, Z. Lv, Y. Zhang, J. Tang, Y. Sui, and B. Song, “Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction,” Appl. Phys. Lett. 109(2), 023502 (2016).
[Crossref]

2015 (2)

X. Wang, B. Song, M. Huo, Y. Song, Z. Lv, Y. Zhang, Y. Wang, Y. Song, J. Wen, Y. Sui, and J. Tang, “Fast and sensitive lateral photovoltaic effects in Fe3O4/Si Schottky junction,” RSC Advances 5(80), 65048–65051 (2015).
[Crossref]

S. Qiao, Y. Liu, J. Liu, J. Chen, G. Yan, S. Wang, and G. Fu, “Large lateral photovoltaic effect in a-Si:H/c-Sip-i-n structure with the aid of bias voltage,” Appl. Phys. Express 8(12), 122201 (2015).
[Crossref]

2014 (5)

J. P. Cascales, I. Martínez, D. Díaz, J. A. Rodrigo, and F. G. Aliev, “Transient lateral photovoltaic effect in patterned metal-oxide-semiconductor films,” Appl. Phys. Lett. 104(23), 231118 (2014).
[Crossref]

S. Wang, W. Wang, L. Zou, X. Zhang, J. Cai, Z. Sun, B. Shen, and J. Sun, “Magnetic tuning of the photovoltaic effect in silicon-based Schottky junctions,” Adv. Mater. 26(47), 8059–8064 (2014).
[Crossref] [PubMed]

S. H. Park, G. Yuan, D. Chen, K. Xiong, J. Song, B. Leung, and J. Han, “Wide bandgap III-nitride nanomembranes for optoelectronic applications,” Nano Lett. 14(8), 4293–4298 (2014).
[Crossref] [PubMed]

J. Kunc, Y. Hu, J. Palmer, Z. Guo, J. Hankinson, S. H. Gamal, C. Berger, and W. A. de Heer, “Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions,” Nano Lett. 14(9), 5170–5175 (2014).
[Crossref] [PubMed]

S. Liu, X. Xie, and H. Wang, “Lateral photovoltaic effect and electron transport observed in Cr nano-film,” Opt. Express 22(10), 11627–11632 (2014).
[Crossref] [PubMed]

2011 (1)

C. Wang, K.-J. Jin, R.-Q. Zhao, H.-B. Lu, H.-Z. Guo, C. Ge, M. He, C. Wang, and G.-Z. Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
[Crossref]

2010 (5)

L. Liao, K.-J. Jin, C. Ge, C. Hu, H.-B. Lu, and G.-Z. Yang, “A theoretical study on the dynamic process of the lateral photovoltage in perovskite oxide heterostructures,” Appl. Phys. Lett. 96(6), 062116 (2010).
[Crossref]

C. Yu and H. Wang, “Large near-infrared lateral photovoltaic effect observed in Co/Si metal-semiconductor structures,” Appl. Phys. Lett. 96(17), 171102 (2010).
[Crossref]

C. Yu and H. Wang, “Light-induced bipolar-resistance effect based on metal-oxide-semiconductor structures of Ti/SiO(2)/Si,” Adv. Mater. 22(9), 966–970 (2010).
[Crossref] [PubMed]

C. Yu and H. Wang, “Large lateral photovoltaic effect in metal-(oxide-) semiconductor structures,” Sensors (Basel) 10(11), 10155–10180 (2010).
[Crossref] [PubMed]

L. Du and H. Wang, “Infrared laser induced lateral photovoltaic effect observed in Cu2O nanoscale film,” Opt. Express 18(9), 9113–9118 (2010).
[Crossref] [PubMed]

2009 (2)

C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express 17(24), 21712–21722 (2009).
[Crossref] [PubMed]

K.-J. Jin, H.-B. Lu, K. Zhao, C. Ge, M. He, and G.-Z. Yang, “Novel multifunctional properties induced by interface effects in perovskite oxide heterostructures,” Adv. Mater. 21(45), 4636–4640 (2009).
[Crossref]

2008 (3)

X. Wang, Y. Sui, J. Tang, C. Wang, X. Zhang, Z. Lu, Z. Liu, W. Su, X. Wei, and R. Yu, “Amplification of magnetoresistance of magnetite in an Fe3O4-SiO2-Si structure,” Appl. Phys. Lett. 92(1), 023502 (2008).
[Crossref]

S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang, “The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures,” Opt. Express 16(6), 3798–3806 (2008).
[Crossref] [PubMed]

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co–SiO2–Si,” New J. Phys. 10(3), 033018 (2008).
[Crossref]

2007 (3)

X. Chen, H. Zhu, J. Cai, and Z. Wu, “High-performance 4H-SiC-based ultraviolet p-i-n photodetector,” J. Appl. Phys. 102(2), 024505 (2007).
[Crossref]

S. Tiwari, R. Prakash, R. J. Choudhary, and D. M. Phase, “Oriented growth of Fe3O4 thin film on crystalline and amorphous substrates by pulsed laser deposition,” J. Phys. D Appl. Phys. 40(16), 4943–4947 (2007).
[Crossref]

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
[Crossref]

2006 (1)

J. Henry and J. Livingstone, “Aging effects of Schottky barrier position sensitive detectors,” IEEE Sens. J. 6(6), 1557–1563 (2006).
[Crossref]

2005 (1)

M. Fonin, R. Pentcheva, Y. S. Dedkov, M. Sperlich, D. V. Vyalikh, M. Scheffler, U. Rüdiger, and G. Güntherodt, “Surface electronic structure of theFe3O4 (100): Evidence of a half-metal to metal transition,” Phys. Rev. B 72(10), 104436 (2005).
[Crossref]

2004 (1)

D. Reisinger, P. Majewski, M. Opel, L. Alff, and R. Gross, “Hall effect, magnetization, and conductivity of Fe3O4 epitaxial thin films,” Appl. Phys. Lett. 85(21), 4980 (2004).
[Crossref]

2002 (1)

J. K. Tang, J. B. Dai, K. Y. Wang, W. L. Zhou, N. Ruzycki, and U. Diebold, “'Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate,” J. Appl. Phys. 91(10), 8411 (2002).
[Crossref]

2000 (1)

N. S. Saks and A. K. Agarwal, “Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC,” Appl. Phys. Lett. 77(20), 3281 (2000).
[Crossref]

1996 (1)

G. Brauer, W. Anwand, E. Nicht, J. Kuriplach, M. Sob, N. Wagner, P. G. Coleman, M. J. Puska, and T. Korhonen, “Evaluation of some basic positron-related characteristics of SiC,” Phys. Rev. B Condens. Matter 54(4), 2512–2517 (1996).
[Crossref] [PubMed]

1994 (1)

D. W. Boeringer and R. Tsu, “Lateral photovoltaic effect in porous silicon,” Appl. Phys. Lett. 65(18), 2332 (1994).
[Crossref]

1991 (1)

Z. Zhang and S. Satpathy, “Electron states, magnetism, and the Verwey transition in magnetite,” Phys. Rev. B Condens. Matter 44(24), 13319–13331 (1991).
[Crossref] [PubMed]

1989 (1)

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792 (1989).
[Crossref]

1987 (1)

H. Niu, C. Aoki, T. Matsuda, M. Takai, and M. Maeda, “A position-sensitive MOS device using lateral photovoltaic effect,” Jpn. J. Appl. Phys. 26(2), L35–L37 (1987).
[Crossref]

1986 (2)

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537 (1986).
[Crossref]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti,” Appl. Phys. Lett. 49(23), 1608 (1986).
[Crossref]

1983 (1)

S. Nishino, “Production of large-area single-crystal wafers of cubic SiC for semiconductor devices,” Appl. Phys. Lett. 42(5), 460 (1983).
[Crossref]

1981 (1)

R. S. Markiewicz and L. A. Harris, “Two-dimensional resistivity of ultrathin metal films,” Phys. Rev. Lett. 46(17), 1149–1153 (1981).
[Crossref]

1957 (1)

J. T. Wallmark, “A new semiconductor photocell using lateral photoeffect,” Pro. IRE 45(4), 474–483 (1957).
[Crossref]

Afshar, A.

G. Shoute, A. Afshar, T. Muneshwar, K. Cadien, and D. Barlage, “Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current,” Nat. Commun. 7, 10632 (2016).
[Crossref] [PubMed]

Agarwal, A. K.

N. S. Saks and A. K. Agarwal, “Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC,” Appl. Phys. Lett. 77(20), 3281 (2000).
[Crossref]

Alff, L.

D. Reisinger, P. Majewski, M. Opel, L. Alff, and R. Gross, “Hall effect, magnetization, and conductivity of Fe3O4 epitaxial thin films,” Appl. Phys. Lett. 85(21), 4980 (2004).
[Crossref]

Aliev, F. G.

J. P. Cascales, I. Martínez, D. Díaz, J. A. Rodrigo, and F. G. Aliev, “Transient lateral photovoltaic effect in patterned metal-oxide-semiconductor films,” Appl. Phys. Lett. 104(23), 231118 (2014).
[Crossref]

Anwand, W.

G. Brauer, W. Anwand, E. Nicht, J. Kuriplach, M. Sob, N. Wagner, P. G. Coleman, M. J. Puska, and T. Korhonen, “Evaluation of some basic positron-related characteristics of SiC,” Phys. Rev. B Condens. Matter 54(4), 2512–2517 (1996).
[Crossref] [PubMed]

Aoki, C.

H. Niu, C. Aoki, T. Matsuda, M. Takai, and M. Maeda, “A position-sensitive MOS device using lateral photovoltaic effect,” Jpn. J. Appl. Phys. 26(2), L35–L37 (1987).
[Crossref]

Barlage, D.

G. Shoute, A. Afshar, T. Muneshwar, K. Cadien, and D. Barlage, “Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current,” Nat. Commun. 7, 10632 (2016).
[Crossref] [PubMed]

Berger, C.

J. Kunc, Y. Hu, J. Palmer, Z. Guo, J. Hankinson, S. H. Gamal, C. Berger, and W. A. de Heer, “Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions,” Nano Lett. 14(9), 5170–5175 (2014).
[Crossref] [PubMed]

Bethea, C. G.

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti,” Appl. Phys. Lett. 49(23), 1608 (1986).
[Crossref]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537 (1986).
[Crossref]

Boeringer, D. W.

D. W. Boeringer and R. Tsu, “Lateral photovoltaic effect in porous silicon,” Appl. Phys. Lett. 65(18), 2332 (1994).
[Crossref]

Brasen, D.

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti,” Appl. Phys. Lett. 49(23), 1608 (1986).
[Crossref]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537 (1986).
[Crossref]

Brauer, G.

G. Brauer, W. Anwand, E. Nicht, J. Kuriplach, M. Sob, N. Wagner, P. G. Coleman, M. J. Puska, and T. Korhonen, “Evaluation of some basic positron-related characteristics of SiC,” Phys. Rev. B Condens. Matter 54(4), 2512–2517 (1996).
[Crossref] [PubMed]

Cadien, K.

G. Shoute, A. Afshar, T. Muneshwar, K. Cadien, and D. Barlage, “Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current,” Nat. Commun. 7, 10632 (2016).
[Crossref] [PubMed]

Cai, J.

S. Wang, W. Wang, L. Zou, X. Zhang, J. Cai, Z. Sun, B. Shen, and J. Sun, “Magnetic tuning of the photovoltaic effect in silicon-based Schottky junctions,” Adv. Mater. 26(47), 8059–8064 (2014).
[Crossref] [PubMed]

X. Chen, H. Zhu, J. Cai, and Z. Wu, “High-performance 4H-SiC-based ultraviolet p-i-n photodetector,” J. Appl. Phys. 102(2), 024505 (2007).
[Crossref]

Cascales, J. P.

J. P. Cascales, I. Martínez, D. Díaz, J. A. Rodrigo, and F. G. Aliev, “Transient lateral photovoltaic effect in patterned metal-oxide-semiconductor films,” Appl. Phys. Lett. 104(23), 231118 (2014).
[Crossref]

Chen, D.

S. H. Park, G. Yuan, D. Chen, K. Xiong, J. Song, B. Leung, and J. Han, “Wide bandgap III-nitride nanomembranes for optoelectronic applications,” Nano Lett. 14(8), 4293–4298 (2014).
[Crossref] [PubMed]

Chen, J.

S. Qiao, Y. Liu, J. Liu, J. Chen, G. Yan, S. Wang, and G. Fu, “Large lateral photovoltaic effect in a-Si:H/c-Sip-i-n structure with the aid of bias voltage,” Appl. Phys. Express 8(12), 122201 (2015).
[Crossref]

Chen, X.

X. Chen, H. Zhu, J. Cai, and Z. Wu, “High-performance 4H-SiC-based ultraviolet p-i-n photodetector,” J. Appl. Phys. 102(2), 024505 (2007).
[Crossref]

Choudhary, R. J.

S. Tiwari, R. Prakash, R. J. Choudhary, and D. M. Phase, “Oriented growth of Fe3O4 thin film on crystalline and amorphous substrates by pulsed laser deposition,” J. Phys. D Appl. Phys. 40(16), 4943–4947 (2007).
[Crossref]

Coleman, P. G.

G. Brauer, W. Anwand, E. Nicht, J. Kuriplach, M. Sob, N. Wagner, P. G. Coleman, M. J. Puska, and T. Korhonen, “Evaluation of some basic positron-related characteristics of SiC,” Phys. Rev. B Condens. Matter 54(4), 2512–2517 (1996).
[Crossref] [PubMed]

Dai, J. B.

J. K. Tang, J. B. Dai, K. Y. Wang, W. L. Zhou, N. Ruzycki, and U. Diebold, “'Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate,” J. Appl. Phys. 91(10), 8411 (2002).
[Crossref]

de Heer, W. A.

J. Kunc, Y. Hu, J. Palmer, Z. Guo, J. Hankinson, S. H. Gamal, C. Berger, and W. A. de Heer, “Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions,” Nano Lett. 14(9), 5170–5175 (2014).
[Crossref] [PubMed]

Dedkov, Y. S.

M. Fonin, R. Pentcheva, Y. S. Dedkov, M. Sperlich, D. V. Vyalikh, M. Scheffler, U. Rüdiger, and G. Güntherodt, “Surface electronic structure of theFe3O4 (100): Evidence of a half-metal to metal transition,” Phys. Rev. B 72(10), 104436 (2005).
[Crossref]

Díaz, D.

J. P. Cascales, I. Martínez, D. Díaz, J. A. Rodrigo, and F. G. Aliev, “Transient lateral photovoltaic effect in patterned metal-oxide-semiconductor films,” Appl. Phys. Lett. 104(23), 231118 (2014).
[Crossref]

Diebold, U.

J. K. Tang, J. B. Dai, K. Y. Wang, W. L. Zhou, N. Ruzycki, and U. Diebold, “'Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate,” J. Appl. Phys. 91(10), 8411 (2002).
[Crossref]

Du, L.

Florez, L. T.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792 (1989).
[Crossref]

Fonin, M.

M. Fonin, R. Pentcheva, Y. S. Dedkov, M. Sperlich, D. V. Vyalikh, M. Scheffler, U. Rüdiger, and G. Güntherodt, “Surface electronic structure of theFe3O4 (100): Evidence of a half-metal to metal transition,” Phys. Rev. B 72(10), 104436 (2005).
[Crossref]

Fu, G.

S. Qiao, Y. Liu, J. Liu, J. Chen, G. Yan, S. Wang, and G. Fu, “Large lateral photovoltaic effect in a-Si:H/c-Sip-i-n structure with the aid of bias voltage,” Appl. Phys. Express 8(12), 122201 (2015).
[Crossref]

Gamal, S. H.

J. Kunc, Y. Hu, J. Palmer, Z. Guo, J. Hankinson, S. H. Gamal, C. Berger, and W. A. de Heer, “Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions,” Nano Lett. 14(9), 5170–5175 (2014).
[Crossref] [PubMed]

Ge, C.

C. Wang, K.-J. Jin, R.-Q. Zhao, H.-B. Lu, H.-Z. Guo, C. Ge, M. He, C. Wang, and G.-Z. Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
[Crossref]

L. Liao, K.-J. Jin, C. Ge, C. Hu, H.-B. Lu, and G.-Z. Yang, “A theoretical study on the dynamic process of the lateral photovoltage in perovskite oxide heterostructures,” Appl. Phys. Lett. 96(6), 062116 (2010).
[Crossref]

K.-J. Jin, H.-B. Lu, K. Zhao, C. Ge, M. He, and G.-Z. Yang, “Novel multifunctional properties induced by interface effects in perovskite oxide heterostructures,” Adv. Mater. 21(45), 4636–4640 (2009).
[Crossref]

Gross, R.

D. Reisinger, P. Majewski, M. Opel, L. Alff, and R. Gross, “Hall effect, magnetization, and conductivity of Fe3O4 epitaxial thin films,” Appl. Phys. Lett. 85(21), 4980 (2004).
[Crossref]

Gu, Y. Z.

Güntherodt, G.

M. Fonin, R. Pentcheva, Y. S. Dedkov, M. Sperlich, D. V. Vyalikh, M. Scheffler, U. Rüdiger, and G. Güntherodt, “Surface electronic structure of theFe3O4 (100): Evidence of a half-metal to metal transition,” Phys. Rev. B 72(10), 104436 (2005).
[Crossref]

Guo, H.-Z.

C. Wang, K.-J. Jin, R.-Q. Zhao, H.-B. Lu, H.-Z. Guo, C. Ge, M. He, C. Wang, and G.-Z. Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
[Crossref]

Guo, Z.

J. Kunc, Y. Hu, J. Palmer, Z. Guo, J. Hankinson, S. H. Gamal, C. Berger, and W. A. de Heer, “Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions,” Nano Lett. 14(9), 5170–5175 (2014).
[Crossref] [PubMed]

Han, J.

S. H. Park, G. Yuan, D. Chen, K. Xiong, J. Song, B. Leung, and J. Han, “Wide bandgap III-nitride nanomembranes for optoelectronic applications,” Nano Lett. 14(8), 4293–4298 (2014).
[Crossref] [PubMed]

Hankinson, J.

J. Kunc, Y. Hu, J. Palmer, Z. Guo, J. Hankinson, S. H. Gamal, C. Berger, and W. A. de Heer, “Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions,” Nano Lett. 14(9), 5170–5175 (2014).
[Crossref] [PubMed]

Harbison, J. P.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792 (1989).
[Crossref]

Harris, L. A.

R. S. Markiewicz and L. A. Harris, “Two-dimensional resistivity of ultrathin metal films,” Phys. Rev. Lett. 46(17), 1149–1153 (1981).
[Crossref]

He, M.

C. Wang, K.-J. Jin, R.-Q. Zhao, H.-B. Lu, H.-Z. Guo, C. Ge, M. He, C. Wang, and G.-Z. Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
[Crossref]

K.-J. Jin, H.-B. Lu, K. Zhao, C. Ge, M. He, and G.-Z. Yang, “Novel multifunctional properties induced by interface effects in perovskite oxide heterostructures,” Adv. Mater. 21(45), 4636–4640 (2009).
[Crossref]

Henry, J.

J. Henry and J. Livingstone, “Aging effects of Schottky barrier position sensitive detectors,” IEEE Sens. J. 6(6), 1557–1563 (2006).
[Crossref]

Hu, C.

X. Wang, X. Zhao, C. Hu, Y. Zhang, B. Song, L. Zhang, W. Liu, Z. Lv, Y. Zhang, J. Tang, Y. Sui, and B. Song, “Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction,” Appl. Phys. Lett. 109(2), 023502 (2016).
[Crossref]

L. Liao, K.-J. Jin, C. Ge, C. Hu, H.-B. Lu, and G.-Z. Yang, “A theoretical study on the dynamic process of the lateral photovoltage in perovskite oxide heterostructures,” Appl. Phys. Lett. 96(6), 062116 (2010).
[Crossref]

Hu, Y.

J. Kunc, Y. Hu, J. Palmer, Z. Guo, J. Hankinson, S. H. Gamal, C. Berger, and W. A. de Heer, “Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions,” Nano Lett. 14(9), 5170–5175 (2014).
[Crossref] [PubMed]

Huo, M.

X. Wang, B. Song, M. Huo, Y. Song, Z. Lv, Y. Zhang, Y. Wang, Y. Song, J. Wen, Y. Sui, and J. Tang, “Fast and sensitive lateral photovoltaic effects in Fe3O4/Si Schottky junction,” RSC Advances 5(80), 65048–65051 (2015).
[Crossref]

Jin, K.-J.

C. Wang, K.-J. Jin, R.-Q. Zhao, H.-B. Lu, H.-Z. Guo, C. Ge, M. He, C. Wang, and G.-Z. Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
[Crossref]

L. Liao, K.-J. Jin, C. Ge, C. Hu, H.-B. Lu, and G.-Z. Yang, “A theoretical study on the dynamic process of the lateral photovoltage in perovskite oxide heterostructures,” Appl. Phys. Lett. 96(6), 062116 (2010).
[Crossref]

K.-J. Jin, H.-B. Lu, K. Zhao, C. Ge, M. He, and G.-Z. Yang, “Novel multifunctional properties induced by interface effects in perovskite oxide heterostructures,” Adv. Mater. 21(45), 4636–4640 (2009).
[Crossref]

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
[Crossref]

Jin, Q. Y.

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co–SiO2–Si,” New J. Phys. 10(3), 033018 (2008).
[Crossref]

Korhonen, T.

G. Brauer, W. Anwand, E. Nicht, J. Kuriplach, M. Sob, N. Wagner, P. G. Coleman, M. J. Puska, and T. Korhonen, “Evaluation of some basic positron-related characteristics of SiC,” Phys. Rev. B Condens. Matter 54(4), 2512–2517 (1996).
[Crossref] [PubMed]

Kunc, J.

J. Kunc, Y. Hu, J. Palmer, Z. Guo, J. Hankinson, S. H. Gamal, C. Berger, and W. A. de Heer, “Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions,” Nano Lett. 14(9), 5170–5175 (2014).
[Crossref] [PubMed]

Kuriplach, J.

G. Brauer, W. Anwand, E. Nicht, J. Kuriplach, M. Sob, N. Wagner, P. G. Coleman, M. J. Puska, and T. Korhonen, “Evaluation of some basic positron-related characteristics of SiC,” Phys. Rev. B Condens. Matter 54(4), 2512–2517 (1996).
[Crossref] [PubMed]

Leung, B.

S. H. Park, G. Yuan, D. Chen, K. Xiong, J. Song, B. Leung, and J. Han, “Wide bandgap III-nitride nanomembranes for optoelectronic applications,” Nano Lett. 14(8), 4293–4298 (2014).
[Crossref] [PubMed]

Levine, B. F.

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti,” Appl. Phys. Lett. 49(23), 1608 (1986).
[Crossref]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537 (1986).
[Crossref]

Liao, L.

L. Liao, K.-J. Jin, C. Ge, C. Hu, H.-B. Lu, and G.-Z. Yang, “A theoretical study on the dynamic process of the lateral photovoltage in perovskite oxide heterostructures,” Appl. Phys. Lett. 96(6), 062116 (2010).
[Crossref]

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
[Crossref]

Liu, J.

S. Qiao, Y. Liu, J. Liu, J. Chen, G. Yan, S. Wang, and G. Fu, “Large lateral photovoltaic effect in a-Si:H/c-Sip-i-n structure with the aid of bias voltage,” Appl. Phys. Express 8(12), 122201 (2015).
[Crossref]

Liu, S.

Liu, W.

X. Wang, X. Zhao, C. Hu, Y. Zhang, B. Song, L. Zhang, W. Liu, Z. Lv, Y. Zhang, J. Tang, Y. Sui, and B. Song, “Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction,” Appl. Phys. Lett. 109(2), 023502 (2016).
[Crossref]

Liu, Y.

S. Qiao, Y. Liu, J. Liu, J. Chen, G. Yan, S. Wang, and G. Fu, “Large lateral photovoltaic effect in a-Si:H/c-Sip-i-n structure with the aid of bias voltage,” Appl. Phys. Express 8(12), 122201 (2015).
[Crossref]

Liu, Z.

X. Wang, Y. Sui, J. Tang, C. Wang, X. Zhang, Z. Lu, Z. Liu, W. Su, X. Wei, and R. Yu, “Amplification of magnetoresistance of magnetite in an Fe3O4-SiO2-Si structure,” Appl. Phys. Lett. 92(1), 023502 (2008).
[Crossref]

Livingstone, J.

J. Henry and J. Livingstone, “Aging effects of Schottky barrier position sensitive detectors,” IEEE Sens. J. 6(6), 1557–1563 (2006).
[Crossref]

Lu, H.-B.

C. Wang, K.-J. Jin, R.-Q. Zhao, H.-B. Lu, H.-Z. Guo, C. Ge, M. He, C. Wang, and G.-Z. Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
[Crossref]

L. Liao, K.-J. Jin, C. Ge, C. Hu, H.-B. Lu, and G.-Z. Yang, “A theoretical study on the dynamic process of the lateral photovoltage in perovskite oxide heterostructures,” Appl. Phys. Lett. 96(6), 062116 (2010).
[Crossref]

K.-J. Jin, H.-B. Lu, K. Zhao, C. Ge, M. He, and G.-Z. Yang, “Novel multifunctional properties induced by interface effects in perovskite oxide heterostructures,” Adv. Mater. 21(45), 4636–4640 (2009).
[Crossref]

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
[Crossref]

Lu, J. J.

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co–SiO2–Si,” New J. Phys. 10(3), 033018 (2008).
[Crossref]

Lu, Z.

X. Wang, Y. Sui, J. Tang, C. Wang, X. Zhang, Z. Lu, Z. Liu, W. Su, X. Wei, and R. Yu, “Amplification of magnetoresistance of magnetite in an Fe3O4-SiO2-Si structure,” Appl. Phys. Lett. 92(1), 023502 (2008).
[Crossref]

Lv, Z.

X. Wang, X. Zhao, C. Hu, Y. Zhang, B. Song, L. Zhang, W. Liu, Z. Lv, Y. Zhang, J. Tang, Y. Sui, and B. Song, “Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction,” Appl. Phys. Lett. 109(2), 023502 (2016).
[Crossref]

X. Wang, B. Song, M. Huo, Y. Song, Z. Lv, Y. Zhang, Y. Wang, Y. Song, J. Wen, Y. Sui, and J. Tang, “Fast and sensitive lateral photovoltaic effects in Fe3O4/Si Schottky junction,” RSC Advances 5(80), 65048–65051 (2015).
[Crossref]

Maeda, M.

H. Niu, C. Aoki, T. Matsuda, M. Takai, and M. Maeda, “A position-sensitive MOS device using lateral photovoltaic effect,” Jpn. J. Appl. Phys. 26(2), L35–L37 (1987).
[Crossref]

Majewski, P.

D. Reisinger, P. Majewski, M. Opel, L. Alff, and R. Gross, “Hall effect, magnetization, and conductivity of Fe3O4 epitaxial thin films,” Appl. Phys. Lett. 85(21), 4980 (2004).
[Crossref]

Markiewicz, R. S.

R. S. Markiewicz and L. A. Harris, “Two-dimensional resistivity of ultrathin metal films,” Phys. Rev. Lett. 46(17), 1149–1153 (1981).
[Crossref]

Martínez, I.

J. P. Cascales, I. Martínez, D. Díaz, J. A. Rodrigo, and F. G. Aliev, “Transient lateral photovoltaic effect in patterned metal-oxide-semiconductor films,” Appl. Phys. Lett. 104(23), 231118 (2014).
[Crossref]

Matsuda, T.

H. Niu, C. Aoki, T. Matsuda, M. Takai, and M. Maeda, “A position-sensitive MOS device using lateral photovoltaic effect,” Jpn. J. Appl. Phys. 26(2), L35–L37 (1987).
[Crossref]

Meynadier, M. H.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792 (1989).
[Crossref]

Muneshwar, T.

G. Shoute, A. Afshar, T. Muneshwar, K. Cadien, and D. Barlage, “Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current,” Nat. Commun. 7, 10632 (2016).
[Crossref] [PubMed]

Nahory, R. E.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792 (1989).
[Crossref]

Nicht, E.

G. Brauer, W. Anwand, E. Nicht, J. Kuriplach, M. Sob, N. Wagner, P. G. Coleman, M. J. Puska, and T. Korhonen, “Evaluation of some basic positron-related characteristics of SiC,” Phys. Rev. B Condens. Matter 54(4), 2512–2517 (1996).
[Crossref] [PubMed]

Nishino, S.

S. Nishino, “Production of large-area single-crystal wafers of cubic SiC for semiconductor devices,” Appl. Phys. Lett. 42(5), 460 (1983).
[Crossref]

Niu, H.

H. Niu, C. Aoki, T. Matsuda, M. Takai, and M. Maeda, “A position-sensitive MOS device using lateral photovoltaic effect,” Jpn. J. Appl. Phys. 26(2), L35–L37 (1987).
[Crossref]

Opel, M.

D. Reisinger, P. Majewski, M. Opel, L. Alff, and R. Gross, “Hall effect, magnetization, and conductivity of Fe3O4 epitaxial thin films,” Appl. Phys. Lett. 85(21), 4980 (2004).
[Crossref]

Palmer, J.

J. Kunc, Y. Hu, J. Palmer, Z. Guo, J. Hankinson, S. H. Gamal, C. Berger, and W. A. de Heer, “Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions,” Nano Lett. 14(9), 5170–5175 (2014).
[Crossref] [PubMed]

Park, S. H.

S. H. Park, G. Yuan, D. Chen, K. Xiong, J. Song, B. Leung, and J. Han, “Wide bandgap III-nitride nanomembranes for optoelectronic applications,” Nano Lett. 14(8), 4293–4298 (2014).
[Crossref] [PubMed]

Pentcheva, R.

M. Fonin, R. Pentcheva, Y. S. Dedkov, M. Sperlich, D. V. Vyalikh, M. Scheffler, U. Rüdiger, and G. Güntherodt, “Surface electronic structure of theFe3O4 (100): Evidence of a half-metal to metal transition,” Phys. Rev. B 72(10), 104436 (2005).
[Crossref]

Phase, D. M.

S. Tiwari, R. Prakash, R. J. Choudhary, and D. M. Phase, “Oriented growth of Fe3O4 thin film on crystalline and amorphous substrates by pulsed laser deposition,” J. Phys. D Appl. Phys. 40(16), 4943–4947 (2007).
[Crossref]

Prakash, R.

S. Tiwari, R. Prakash, R. J. Choudhary, and D. M. Phase, “Oriented growth of Fe3O4 thin film on crystalline and amorphous substrates by pulsed laser deposition,” J. Phys. D Appl. Phys. 40(16), 4943–4947 (2007).
[Crossref]

Puska, M. J.

G. Brauer, W. Anwand, E. Nicht, J. Kuriplach, M. Sob, N. Wagner, P. G. Coleman, M. J. Puska, and T. Korhonen, “Evaluation of some basic positron-related characteristics of SiC,” Phys. Rev. B Condens. Matter 54(4), 2512–2517 (1996).
[Crossref] [PubMed]

Qiao, S.

S. Qiao, Y. Liu, J. Liu, J. Chen, G. Yan, S. Wang, and G. Fu, “Large lateral photovoltaic effect in a-Si:H/c-Sip-i-n structure with the aid of bias voltage,” Appl. Phys. Express 8(12), 122201 (2015).
[Crossref]

Reisinger, D.

D. Reisinger, P. Majewski, M. Opel, L. Alff, and R. Gross, “Hall effect, magnetization, and conductivity of Fe3O4 epitaxial thin films,” Appl. Phys. Lett. 85(21), 4980 (2004).
[Crossref]

Rodrigo, J. A.

J. P. Cascales, I. Martínez, D. Díaz, J. A. Rodrigo, and F. G. Aliev, “Transient lateral photovoltaic effect in patterned metal-oxide-semiconductor films,” Appl. Phys. Lett. 104(23), 231118 (2014).
[Crossref]

Rüdiger, U.

M. Fonin, R. Pentcheva, Y. S. Dedkov, M. Sperlich, D. V. Vyalikh, M. Scheffler, U. Rüdiger, and G. Güntherodt, “Surface electronic structure of theFe3O4 (100): Evidence of a half-metal to metal transition,” Phys. Rev. B 72(10), 104436 (2005).
[Crossref]

Ruzycki, N.

J. K. Tang, J. B. Dai, K. Y. Wang, W. L. Zhou, N. Ruzycki, and U. Diebold, “'Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate,” J. Appl. Phys. 91(10), 8411 (2002).
[Crossref]

Saks, N. S.

N. S. Saks and A. K. Agarwal, “Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC,” Appl. Phys. Lett. 77(20), 3281 (2000).
[Crossref]

Satpathy, S.

Z. Zhang and S. Satpathy, “Electron states, magnetism, and the Verwey transition in magnetite,” Phys. Rev. B Condens. Matter 44(24), 13319–13331 (1991).
[Crossref] [PubMed]

Scheffler, M.

M. Fonin, R. Pentcheva, Y. S. Dedkov, M. Sperlich, D. V. Vyalikh, M. Scheffler, U. Rüdiger, and G. Güntherodt, “Surface electronic structure of theFe3O4 (100): Evidence of a half-metal to metal transition,” Phys. Rev. B 72(10), 104436 (2005).
[Crossref]

Shen, B.

S. Wang, W. Wang, L. Zou, X. Zhang, J. Cai, Z. Sun, B. Shen, and J. Sun, “Magnetic tuning of the photovoltaic effect in silicon-based Schottky junctions,” Adv. Mater. 26(47), 8059–8064 (2014).
[Crossref] [PubMed]

Shoute, G.

G. Shoute, A. Afshar, T. Muneshwar, K. Cadien, and D. Barlage, “Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current,” Nat. Commun. 7, 10632 (2016).
[Crossref] [PubMed]

Sob, M.

G. Brauer, W. Anwand, E. Nicht, J. Kuriplach, M. Sob, N. Wagner, P. G. Coleman, M. J. Puska, and T. Korhonen, “Evaluation of some basic positron-related characteristics of SiC,” Phys. Rev. B Condens. Matter 54(4), 2512–2517 (1996).
[Crossref] [PubMed]

Song, B.

X. Wang, X. Zhao, C. Hu, Y. Zhang, B. Song, L. Zhang, W. Liu, Z. Lv, Y. Zhang, J. Tang, Y. Sui, and B. Song, “Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction,” Appl. Phys. Lett. 109(2), 023502 (2016).
[Crossref]

X. Wang, X. Zhao, C. Hu, Y. Zhang, B. Song, L. Zhang, W. Liu, Z. Lv, Y. Zhang, J. Tang, Y. Sui, and B. Song, “Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction,” Appl. Phys. Lett. 109(2), 023502 (2016).
[Crossref]

X. Wang, B. Song, M. Huo, Y. Song, Z. Lv, Y. Zhang, Y. Wang, Y. Song, J. Wen, Y. Sui, and J. Tang, “Fast and sensitive lateral photovoltaic effects in Fe3O4/Si Schottky junction,” RSC Advances 5(80), 65048–65051 (2015).
[Crossref]

Song, J.

S. H. Park, G. Yuan, D. Chen, K. Xiong, J. Song, B. Leung, and J. Han, “Wide bandgap III-nitride nanomembranes for optoelectronic applications,” Nano Lett. 14(8), 4293–4298 (2014).
[Crossref] [PubMed]

Song, Y.

X. Wang, B. Song, M. Huo, Y. Song, Z. Lv, Y. Zhang, Y. Wang, Y. Song, J. Wen, Y. Sui, and J. Tang, “Fast and sensitive lateral photovoltaic effects in Fe3O4/Si Schottky junction,” RSC Advances 5(80), 65048–65051 (2015).
[Crossref]

X. Wang, B. Song, M. Huo, Y. Song, Z. Lv, Y. Zhang, Y. Wang, Y. Song, J. Wen, Y. Sui, and J. Tang, “Fast and sensitive lateral photovoltaic effects in Fe3O4/Si Schottky junction,” RSC Advances 5(80), 65048–65051 (2015).
[Crossref]

Sperlich, M.

M. Fonin, R. Pentcheva, Y. S. Dedkov, M. Sperlich, D. V. Vyalikh, M. Scheffler, U. Rüdiger, and G. Güntherodt, “Surface electronic structure of theFe3O4 (100): Evidence of a half-metal to metal transition,” Phys. Rev. B 72(10), 104436 (2005).
[Crossref]

Su, W.

X. Wang, Y. Sui, J. Tang, C. Wang, X. Zhang, Z. Lu, Z. Liu, W. Su, X. Wei, and R. Yu, “Amplification of magnetoresistance of magnetite in an Fe3O4-SiO2-Si structure,” Appl. Phys. Lett. 92(1), 023502 (2008).
[Crossref]

Sui, Y.

X. Wang, X. Zhao, C. Hu, Y. Zhang, B. Song, L. Zhang, W. Liu, Z. Lv, Y. Zhang, J. Tang, Y. Sui, and B. Song, “Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction,” Appl. Phys. Lett. 109(2), 023502 (2016).
[Crossref]

X. Wang, B. Song, M. Huo, Y. Song, Z. Lv, Y. Zhang, Y. Wang, Y. Song, J. Wen, Y. Sui, and J. Tang, “Fast and sensitive lateral photovoltaic effects in Fe3O4/Si Schottky junction,” RSC Advances 5(80), 65048–65051 (2015).
[Crossref]

X. Wang, Y. Sui, J. Tang, C. Wang, X. Zhang, Z. Lu, Z. Liu, W. Su, X. Wei, and R. Yu, “Amplification of magnetoresistance of magnetite in an Fe3O4-SiO2-Si structure,” Appl. Phys. Lett. 92(1), 023502 (2008).
[Crossref]

Sun, J.

S. Wang, W. Wang, L. Zou, X. Zhang, J. Cai, Z. Sun, B. Shen, and J. Sun, “Magnetic tuning of the photovoltaic effect in silicon-based Schottky junctions,” Adv. Mater. 26(47), 8059–8064 (2014).
[Crossref] [PubMed]

Sun, Z.

S. Wang, W. Wang, L. Zou, X. Zhang, J. Cai, Z. Sun, B. Shen, and J. Sun, “Magnetic tuning of the photovoltaic effect in silicon-based Schottky junctions,” Adv. Mater. 26(47), 8059–8064 (2014).
[Crossref] [PubMed]

Tabatabaie, N.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792 (1989).
[Crossref]

Takai, M.

H. Niu, C. Aoki, T. Matsuda, M. Takai, and M. Maeda, “A position-sensitive MOS device using lateral photovoltaic effect,” Jpn. J. Appl. Phys. 26(2), L35–L37 (1987).
[Crossref]

Tang, J.

X. Wang, X. Zhao, C. Hu, Y. Zhang, B. Song, L. Zhang, W. Liu, Z. Lv, Y. Zhang, J. Tang, Y. Sui, and B. Song, “Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction,” Appl. Phys. Lett. 109(2), 023502 (2016).
[Crossref]

X. Wang, B. Song, M. Huo, Y. Song, Z. Lv, Y. Zhang, Y. Wang, Y. Song, J. Wen, Y. Sui, and J. Tang, “Fast and sensitive lateral photovoltaic effects in Fe3O4/Si Schottky junction,” RSC Advances 5(80), 65048–65051 (2015).
[Crossref]

X. Wang, Y. Sui, J. Tang, C. Wang, X. Zhang, Z. Lu, Z. Liu, W. Su, X. Wei, and R. Yu, “Amplification of magnetoresistance of magnetite in an Fe3O4-SiO2-Si structure,” Appl. Phys. Lett. 92(1), 023502 (2008).
[Crossref]

Tang, J. K.

J. K. Tang, J. B. Dai, K. Y. Wang, W. L. Zhou, N. Ruzycki, and U. Diebold, “'Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate,” J. Appl. Phys. 91(10), 8411 (2002).
[Crossref]

Tiwari, S.

S. Tiwari, R. Prakash, R. J. Choudhary, and D. M. Phase, “Oriented growth of Fe3O4 thin film on crystalline and amorphous substrates by pulsed laser deposition,” J. Phys. D Appl. Phys. 40(16), 4943–4947 (2007).
[Crossref]

Tsu, R.

D. W. Boeringer and R. Tsu, “Lateral photovoltaic effect in porous silicon,” Appl. Phys. Lett. 65(18), 2332 (1994).
[Crossref]

Vyalikh, D. V.

M. Fonin, R. Pentcheva, Y. S. Dedkov, M. Sperlich, D. V. Vyalikh, M. Scheffler, U. Rüdiger, and G. Güntherodt, “Surface electronic structure of theFe3O4 (100): Evidence of a half-metal to metal transition,” Phys. Rev. B 72(10), 104436 (2005).
[Crossref]

Wagner, N.

G. Brauer, W. Anwand, E. Nicht, J. Kuriplach, M. Sob, N. Wagner, P. G. Coleman, M. J. Puska, and T. Korhonen, “Evaluation of some basic positron-related characteristics of SiC,” Phys. Rev. B Condens. Matter 54(4), 2512–2517 (1996).
[Crossref] [PubMed]

Wallmark, J. T.

J. T. Wallmark, “A new semiconductor photocell using lateral photoeffect,” Pro. IRE 45(4), 474–483 (1957).
[Crossref]

Wang, C.

C. Wang, K.-J. Jin, R.-Q. Zhao, H.-B. Lu, H.-Z. Guo, C. Ge, M. He, C. Wang, and G.-Z. Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
[Crossref]

C. Wang, K.-J. Jin, R.-Q. Zhao, H.-B. Lu, H.-Z. Guo, C. Ge, M. He, C. Wang, and G.-Z. Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
[Crossref]

X. Wang, Y. Sui, J. Tang, C. Wang, X. Zhang, Z. Lu, Z. Liu, W. Su, X. Wei, and R. Yu, “Amplification of magnetoresistance of magnetite in an Fe3O4-SiO2-Si structure,” Appl. Phys. Lett. 92(1), 023502 (2008).
[Crossref]

Wang, H.

S. Liu, X. Xie, and H. Wang, “Lateral photovoltaic effect and electron transport observed in Cr nano-film,” Opt. Express 22(10), 11627–11632 (2014).
[Crossref] [PubMed]

L. Du and H. Wang, “Infrared laser induced lateral photovoltaic effect observed in Cu2O nanoscale film,” Opt. Express 18(9), 9113–9118 (2010).
[Crossref] [PubMed]

C. Yu and H. Wang, “Large lateral photovoltaic effect in metal-(oxide-) semiconductor structures,” Sensors (Basel) 10(11), 10155–10180 (2010).
[Crossref] [PubMed]

C. Yu and H. Wang, “Light-induced bipolar-resistance effect based on metal-oxide-semiconductor structures of Ti/SiO(2)/Si,” Adv. Mater. 22(9), 966–970 (2010).
[Crossref] [PubMed]

C. Yu and H. Wang, “Large near-infrared lateral photovoltaic effect observed in Co/Si metal-semiconductor structures,” Appl. Phys. Lett. 96(17), 171102 (2010).
[Crossref]

C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express 17(24), 21712–21722 (2009).
[Crossref] [PubMed]

S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang, “The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures,” Opt. Express 16(6), 3798–3806 (2008).
[Crossref] [PubMed]

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co–SiO2–Si,” New J. Phys. 10(3), 033018 (2008).
[Crossref]

Wang, K. Y.

J. K. Tang, J. B. Dai, K. Y. Wang, W. L. Zhou, N. Ruzycki, and U. Diebold, “'Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate,” J. Appl. Phys. 91(10), 8411 (2002).
[Crossref]

Wang, S.

S. Qiao, Y. Liu, J. Liu, J. Chen, G. Yan, S. Wang, and G. Fu, “Large lateral photovoltaic effect in a-Si:H/c-Sip-i-n structure with the aid of bias voltage,” Appl. Phys. Express 8(12), 122201 (2015).
[Crossref]

S. Wang, W. Wang, L. Zou, X. Zhang, J. Cai, Z. Sun, B. Shen, and J. Sun, “Magnetic tuning of the photovoltaic effect in silicon-based Schottky junctions,” Adv. Mater. 26(47), 8059–8064 (2014).
[Crossref] [PubMed]

Wang, W.

S. Wang, W. Wang, L. Zou, X. Zhang, J. Cai, Z. Sun, B. Shen, and J. Sun, “Magnetic tuning of the photovoltaic effect in silicon-based Schottky junctions,” Adv. Mater. 26(47), 8059–8064 (2014).
[Crossref] [PubMed]

Wang, X.

X. Wang, X. Zhao, C. Hu, Y. Zhang, B. Song, L. Zhang, W. Liu, Z. Lv, Y. Zhang, J. Tang, Y. Sui, and B. Song, “Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction,” Appl. Phys. Lett. 109(2), 023502 (2016).
[Crossref]

X. Wang, B. Song, M. Huo, Y. Song, Z. Lv, Y. Zhang, Y. Wang, Y. Song, J. Wen, Y. Sui, and J. Tang, “Fast and sensitive lateral photovoltaic effects in Fe3O4/Si Schottky junction,” RSC Advances 5(80), 65048–65051 (2015).
[Crossref]

X. Wang, Y. Sui, J. Tang, C. Wang, X. Zhang, Z. Lu, Z. Liu, W. Su, X. Wei, and R. Yu, “Amplification of magnetoresistance of magnetite in an Fe3O4-SiO2-Si structure,” Appl. Phys. Lett. 92(1), 023502 (2008).
[Crossref]

Wang, Y.

X. Wang, B. Song, M. Huo, Y. Song, Z. Lv, Y. Zhang, Y. Wang, Y. Song, J. Wen, Y. Sui, and J. Tang, “Fast and sensitive lateral photovoltaic effects in Fe3O4/Si Schottky junction,” RSC Advances 5(80), 65048–65051 (2015).
[Crossref]

Wang, Z. H.

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co–SiO2–Si,” New J. Phys. 10(3), 033018 (2008).
[Crossref]

S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang, “The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures,” Opt. Express 16(6), 3798–3806 (2008).
[Crossref] [PubMed]

Wei, X.

X. Wang, Y. Sui, J. Tang, C. Wang, X. Zhang, Z. Lu, Z. Liu, W. Su, X. Wei, and R. Yu, “Amplification of magnetoresistance of magnetite in an Fe3O4-SiO2-Si structure,” Appl. Phys. Lett. 92(1), 023502 (2008).
[Crossref]

Wen, J.

X. Wang, B. Song, M. Huo, Y. Song, Z. Lv, Y. Zhang, Y. Wang, Y. Song, J. Wen, Y. Sui, and J. Tang, “Fast and sensitive lateral photovoltaic effects in Fe3O4/Si Schottky junction,” RSC Advances 5(80), 65048–65051 (2015).
[Crossref]

Willens, R. H.

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti,” Appl. Phys. Lett. 49(23), 1608 (1986).
[Crossref]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537 (1986).
[Crossref]

Wu, Z.

X. Chen, H. Zhu, J. Cai, and Z. Wu, “High-performance 4H-SiC-based ultraviolet p-i-n photodetector,” J. Appl. Phys. 102(2), 024505 (2007).
[Crossref]

Xia, Y. X.

Xiao, S. Q.

Xie, X.

Xiong, K.

S. H. Park, G. Yuan, D. Chen, K. Xiong, J. Song, B. Leung, and J. Han, “Wide bandgap III-nitride nanomembranes for optoelectronic applications,” Nano Lett. 14(8), 4293–4298 (2014).
[Crossref] [PubMed]

Yan, G.

S. Qiao, Y. Liu, J. Liu, J. Chen, G. Yan, S. Wang, and G. Fu, “Large lateral photovoltaic effect in a-Si:H/c-Sip-i-n structure with the aid of bias voltage,” Appl. Phys. Express 8(12), 122201 (2015).
[Crossref]

Yang, G.-Z.

C. Wang, K.-J. Jin, R.-Q. Zhao, H.-B. Lu, H.-Z. Guo, C. Ge, M. He, C. Wang, and G.-Z. Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
[Crossref]

L. Liao, K.-J. Jin, C. Ge, C. Hu, H.-B. Lu, and G.-Z. Yang, “A theoretical study on the dynamic process of the lateral photovoltage in perovskite oxide heterostructures,” Appl. Phys. Lett. 96(6), 062116 (2010).
[Crossref]

K.-J. Jin, H.-B. Lu, K. Zhao, C. Ge, M. He, and G.-Z. Yang, “Novel multifunctional properties induced by interface effects in perovskite oxide heterostructures,” Adv. Mater. 21(45), 4636–4640 (2009).
[Crossref]

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
[Crossref]

Yu, C.

C. Yu and H. Wang, “Large lateral photovoltaic effect in metal-(oxide-) semiconductor structures,” Sensors (Basel) 10(11), 10155–10180 (2010).
[Crossref] [PubMed]

C. Yu and H. Wang, “Light-induced bipolar-resistance effect based on metal-oxide-semiconductor structures of Ti/SiO(2)/Si,” Adv. Mater. 22(9), 966–970 (2010).
[Crossref] [PubMed]

C. Yu and H. Wang, “Large near-infrared lateral photovoltaic effect observed in Co/Si metal-semiconductor structures,” Appl. Phys. Lett. 96(17), 171102 (2010).
[Crossref]

Yu, C. Q.

C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express 17(24), 21712–21722 (2009).
[Crossref] [PubMed]

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co–SiO2–Si,” New J. Phys. 10(3), 033018 (2008).
[Crossref]

Yu, R.

X. Wang, Y. Sui, J. Tang, C. Wang, X. Zhang, Z. Lu, Z. Liu, W. Su, X. Wei, and R. Yu, “Amplification of magnetoresistance of magnetite in an Fe3O4-SiO2-Si structure,” Appl. Phys. Lett. 92(1), 023502 (2008).
[Crossref]

Yuan, G.

S. H. Park, G. Yuan, D. Chen, K. Xiong, J. Song, B. Leung, and J. Han, “Wide bandgap III-nitride nanomembranes for optoelectronic applications,” Nano Lett. 14(8), 4293–4298 (2014).
[Crossref] [PubMed]

Zhang, L.

X. Wang, X. Zhao, C. Hu, Y. Zhang, B. Song, L. Zhang, W. Liu, Z. Lv, Y. Zhang, J. Tang, Y. Sui, and B. Song, “Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction,” Appl. Phys. Lett. 109(2), 023502 (2016).
[Crossref]

Zhang, X.

S. Wang, W. Wang, L. Zou, X. Zhang, J. Cai, Z. Sun, B. Shen, and J. Sun, “Magnetic tuning of the photovoltaic effect in silicon-based Schottky junctions,” Adv. Mater. 26(47), 8059–8064 (2014).
[Crossref] [PubMed]

X. Wang, Y. Sui, J. Tang, C. Wang, X. Zhang, Z. Lu, Z. Liu, W. Su, X. Wei, and R. Yu, “Amplification of magnetoresistance of magnetite in an Fe3O4-SiO2-Si structure,” Appl. Phys. Lett. 92(1), 023502 (2008).
[Crossref]

Zhang, Y.

X. Wang, X. Zhao, C. Hu, Y. Zhang, B. Song, L. Zhang, W. Liu, Z. Lv, Y. Zhang, J. Tang, Y. Sui, and B. Song, “Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction,” Appl. Phys. Lett. 109(2), 023502 (2016).
[Crossref]

X. Wang, X. Zhao, C. Hu, Y. Zhang, B. Song, L. Zhang, W. Liu, Z. Lv, Y. Zhang, J. Tang, Y. Sui, and B. Song, “Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction,” Appl. Phys. Lett. 109(2), 023502 (2016).
[Crossref]

X. Wang, B. Song, M. Huo, Y. Song, Z. Lv, Y. Zhang, Y. Wang, Y. Song, J. Wen, Y. Sui, and J. Tang, “Fast and sensitive lateral photovoltaic effects in Fe3O4/Si Schottky junction,” RSC Advances 5(80), 65048–65051 (2015).
[Crossref]

Zhang, Z.

Z. Zhang and S. Satpathy, “Electron states, magnetism, and the Verwey transition in magnetite,” Phys. Rev. B Condens. Matter 44(24), 13319–13331 (1991).
[Crossref] [PubMed]

Zhao, K.

K.-J. Jin, H.-B. Lu, K. Zhao, C. Ge, M. He, and G.-Z. Yang, “Novel multifunctional properties induced by interface effects in perovskite oxide heterostructures,” Adv. Mater. 21(45), 4636–4640 (2009).
[Crossref]

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
[Crossref]

Zhao, R.-Q.

C. Wang, K.-J. Jin, R.-Q. Zhao, H.-B. Lu, H.-Z. Guo, C. Ge, M. He, C. Wang, and G.-Z. Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
[Crossref]

Zhao, X.

X. Wang, X. Zhao, C. Hu, Y. Zhang, B. Song, L. Zhang, W. Liu, Z. Lv, Y. Zhang, J. Tang, Y. Sui, and B. Song, “Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction,” Appl. Phys. Lett. 109(2), 023502 (2016).
[Crossref]

Zhao, Z. C.

Zhou, W. L.

J. K. Tang, J. B. Dai, K. Y. Wang, W. L. Zhou, N. Ruzycki, and U. Diebold, “'Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate,” J. Appl. Phys. 91(10), 8411 (2002).
[Crossref]

Zhu, H.

X. Chen, H. Zhu, J. Cai, and Z. Wu, “High-performance 4H-SiC-based ultraviolet p-i-n photodetector,” J. Appl. Phys. 102(2), 024505 (2007).
[Crossref]

Zou, L.

S. Wang, W. Wang, L. Zou, X. Zhang, J. Cai, Z. Sun, B. Shen, and J. Sun, “Magnetic tuning of the photovoltaic effect in silicon-based Schottky junctions,” Adv. Mater. 26(47), 8059–8064 (2014).
[Crossref] [PubMed]

Adv. Mater. (3)

S. Wang, W. Wang, L. Zou, X. Zhang, J. Cai, Z. Sun, B. Shen, and J. Sun, “Magnetic tuning of the photovoltaic effect in silicon-based Schottky junctions,” Adv. Mater. 26(47), 8059–8064 (2014).
[Crossref] [PubMed]

K.-J. Jin, H.-B. Lu, K. Zhao, C. Ge, M. He, and G.-Z. Yang, “Novel multifunctional properties induced by interface effects in perovskite oxide heterostructures,” Adv. Mater. 21(45), 4636–4640 (2009).
[Crossref]

C. Yu and H. Wang, “Light-induced bipolar-resistance effect based on metal-oxide-semiconductor structures of Ti/SiO(2)/Si,” Adv. Mater. 22(9), 966–970 (2010).
[Crossref] [PubMed]

Appl. Phys. Express (1)

S. Qiao, Y. Liu, J. Liu, J. Chen, G. Yan, S. Wang, and G. Fu, “Large lateral photovoltaic effect in a-Si:H/c-Sip-i-n structure with the aid of bias voltage,” Appl. Phys. Express 8(12), 122201 (2015).
[Crossref]

Appl. Phys. Lett. (14)

D. W. Boeringer and R. Tsu, “Lateral photovoltaic effect in porous silicon,” Appl. Phys. Lett. 65(18), 2332 (1994).
[Crossref]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537 (1986).
[Crossref]

J. P. Cascales, I. Martínez, D. Díaz, J. A. Rodrigo, and F. G. Aliev, “Transient lateral photovoltaic effect in patterned metal-oxide-semiconductor films,” Appl. Phys. Lett. 104(23), 231118 (2014).
[Crossref]

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792 (1989).
[Crossref]

S. Nishino, “Production of large-area single-crystal wafers of cubic SiC for semiconductor devices,” Appl. Phys. Lett. 42(5), 460 (1983).
[Crossref]

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
[Crossref]

L. Liao, K.-J. Jin, C. Ge, C. Hu, H.-B. Lu, and G.-Z. Yang, “A theoretical study on the dynamic process of the lateral photovoltage in perovskite oxide heterostructures,” Appl. Phys. Lett. 96(6), 062116 (2010).
[Crossref]

C. Wang, K.-J. Jin, R.-Q. Zhao, H.-B. Lu, H.-Z. Guo, C. Ge, M. He, C. Wang, and G.-Z. Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
[Crossref]

X. Wang, Y. Sui, J. Tang, C. Wang, X. Zhang, Z. Lu, Z. Liu, W. Su, X. Wei, and R. Yu, “Amplification of magnetoresistance of magnetite in an Fe3O4-SiO2-Si structure,” Appl. Phys. Lett. 92(1), 023502 (2008).
[Crossref]

X. Wang, X. Zhao, C. Hu, Y. Zhang, B. Song, L. Zhang, W. Liu, Z. Lv, Y. Zhang, J. Tang, Y. Sui, and B. Song, “Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction,” Appl. Phys. Lett. 109(2), 023502 (2016).
[Crossref]

N. S. Saks and A. K. Agarwal, “Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC,” Appl. Phys. Lett. 77(20), 3281 (2000).
[Crossref]

D. Reisinger, P. Majewski, M. Opel, L. Alff, and R. Gross, “Hall effect, magnetization, and conductivity of Fe3O4 epitaxial thin films,” Appl. Phys. Lett. 85(21), 4980 (2004).
[Crossref]

C. Yu and H. Wang, “Large near-infrared lateral photovoltaic effect observed in Co/Si metal-semiconductor structures,” Appl. Phys. Lett. 96(17), 171102 (2010).
[Crossref]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti,” Appl. Phys. Lett. 49(23), 1608 (1986).
[Crossref]

IEEE Sens. J. (1)

J. Henry and J. Livingstone, “Aging effects of Schottky barrier position sensitive detectors,” IEEE Sens. J. 6(6), 1557–1563 (2006).
[Crossref]

J. Appl. Phys. (2)

J. K. Tang, J. B. Dai, K. Y. Wang, W. L. Zhou, N. Ruzycki, and U. Diebold, “'Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate,” J. Appl. Phys. 91(10), 8411 (2002).
[Crossref]

X. Chen, H. Zhu, J. Cai, and Z. Wu, “High-performance 4H-SiC-based ultraviolet p-i-n photodetector,” J. Appl. Phys. 102(2), 024505 (2007).
[Crossref]

J. Phys. D Appl. Phys. (1)

S. Tiwari, R. Prakash, R. J. Choudhary, and D. M. Phase, “Oriented growth of Fe3O4 thin film on crystalline and amorphous substrates by pulsed laser deposition,” J. Phys. D Appl. Phys. 40(16), 4943–4947 (2007).
[Crossref]

Jpn. J. Appl. Phys. (1)

H. Niu, C. Aoki, T. Matsuda, M. Takai, and M. Maeda, “A position-sensitive MOS device using lateral photovoltaic effect,” Jpn. J. Appl. Phys. 26(2), L35–L37 (1987).
[Crossref]

Nano Lett. (2)

S. H. Park, G. Yuan, D. Chen, K. Xiong, J. Song, B. Leung, and J. Han, “Wide bandgap III-nitride nanomembranes for optoelectronic applications,” Nano Lett. 14(8), 4293–4298 (2014).
[Crossref] [PubMed]

J. Kunc, Y. Hu, J. Palmer, Z. Guo, J. Hankinson, S. H. Gamal, C. Berger, and W. A. de Heer, “Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions,” Nano Lett. 14(9), 5170–5175 (2014).
[Crossref] [PubMed]

Nat. Commun. (1)

G. Shoute, A. Afshar, T. Muneshwar, K. Cadien, and D. Barlage, “Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current,” Nat. Commun. 7, 10632 (2016).
[Crossref] [PubMed]

New J. Phys. (1)

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co–SiO2–Si,” New J. Phys. 10(3), 033018 (2008).
[Crossref]

Opt. Express (4)

Phys. Rev. B (1)

M. Fonin, R. Pentcheva, Y. S. Dedkov, M. Sperlich, D. V. Vyalikh, M. Scheffler, U. Rüdiger, and G. Güntherodt, “Surface electronic structure of theFe3O4 (100): Evidence of a half-metal to metal transition,” Phys. Rev. B 72(10), 104436 (2005).
[Crossref]

Phys. Rev. B Condens. Matter (2)

Z. Zhang and S. Satpathy, “Electron states, magnetism, and the Verwey transition in magnetite,” Phys. Rev. B Condens. Matter 44(24), 13319–13331 (1991).
[Crossref] [PubMed]

G. Brauer, W. Anwand, E. Nicht, J. Kuriplach, M. Sob, N. Wagner, P. G. Coleman, M. J. Puska, and T. Korhonen, “Evaluation of some basic positron-related characteristics of SiC,” Phys. Rev. B Condens. Matter 54(4), 2512–2517 (1996).
[Crossref] [PubMed]

Phys. Rev. Lett. (1)

R. S. Markiewicz and L. A. Harris, “Two-dimensional resistivity of ultrathin metal films,” Phys. Rev. Lett. 46(17), 1149–1153 (1981).
[Crossref]

Pro. IRE (1)

J. T. Wallmark, “A new semiconductor photocell using lateral photoeffect,” Pro. IRE 45(4), 474–483 (1957).
[Crossref]

RSC Advances (1)

X. Wang, B. Song, M. Huo, Y. Song, Z. Lv, Y. Zhang, Y. Wang, Y. Song, J. Wen, Y. Sui, and J. Tang, “Fast and sensitive lateral photovoltaic effects in Fe3O4/Si Schottky junction,” RSC Advances 5(80), 65048–65051 (2015).
[Crossref]

Sensors (Basel) (1)

C. Yu and H. Wang, “Large lateral photovoltaic effect in metal-(oxide-) semiconductor structures,” Sensors (Basel) 10(11), 10155–10180 (2010).
[Crossref] [PubMed]

Other (2)

http://www.hamamatsu.com/resources/pdf/ssd/s8673_kpsd1024e.pdf .

J. I. Pankowe, Optical Processes in Semiconductors (Academic, 1971).

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (5)

Fig. 1
Fig. 1 (a) The XRD pattern of the Fe3O4 film on 3C-SiC. (b) The Fe 2p XPS spectrum of Fe3O4 on 3C-SiC substrate. (c) The high-resolution TEM pattern of Fe3O4/3C-SiC structure. (d) Transmission spectrum of 3C-SiC wafer. We can estimate that the bandgap of 3C-SiC is about 2.36 eV from the (αhv)1/2 versus hv curve because the 3C-SiC is an indirect band gap semiconductor.
Fig. 2
Fig. 2 (a) The longitudinal I–V curve for the Fe3O4 (15nm and 10 nm)/3C-SiC junction, the inset shows the schematic circuit. (b) Energy band diagram of the Fe3O4/3C-SiC structure.
Fig. 3
Fig. 3 (a) The dependence of the lateral photovoltage on the laser position for the Fe3O4/3C-SiC junctions. (b) LPE voltage on the 3C-SiC side. (c) LPE sensitivities as a function of Fe3O4 thickness. (d) LPE measurement in Fe3O4 (15 nm)/3C-SiC as a function of laser power with different light wavelengths
Fig. 4
Fig. 4 (a) Diagram of the experimental set-up for the optical response measurement. (b) The variation of the open-circuit LPE with time, the schematic circuit of the measurement is shown in the inset. (c) The variation of the LPE with time, different resistances were connected in parallel to the Fe3O4 film, the schematic circuit of the measurement is shown in the inset. (d) The transverse current-voltage curve on the Fe3O4 surface of the Fe3O4 (15nm)/3C-SiC junction.
Fig. 5
Fig. 5 The photo-excited electron motion profile in Fe3O4/3C-SiC structure.

Equations (10)

Equations on this page are rendered with MathJax. Learn more.

L P V = K m N 0 [ exp ( | x L | λ m ) exp ( | x + L | λ m ) ]
D m d 2 N ( x ) d x 2 = N ( x ) τ m
N ( x ) = N 0 exp ( | x L | / λ m )
E F , m = E F , 0 + 1 4 π ( 2 2 m 0 ) 3 / 2 E F , 0 1 / 2 N ( x )
V AB = [ E F , m ( B ) E F , m ( A ) ] / e = 1 4 π e ( 2 2 m 0 ) 3 / 2 E F , 0 1 / 2 [ N ( B ) N ( A ) ]
S e n s i t i v i t y = κ m = 2 K m N 0 λ m exp ( L λ m )
κ m = 2 K m N 0 C ( t t 0 ) exp ( L C ( t t 0 ) )
κ m E F , 0 1 / 4 ρ 1 / 2 exp ( ρ 1 / 2 )
V AB,linear = 2 K m n 0 λ m exp ( L λ m ) [ 1 P τ p / n 0 ] x
κ m ( λ ) = 2 K m K γ ( h c λ E g ) α β exp ( L γ ( h c λ E g ) β ) [ 1 P τ p K 1 ( h c λ E g ) α ]

Metrics