Abstract

n-GaN/i-ZnO/p-GaN double heterojunction diodes were constructed by vertically binding p-GaN wafer on the tip of ZnO nanopencil arrays grown on n-GaN/sapphire substrates. An increased quantum confinement in the tip of ZnO nanopencils has been verified by photoluminescence measurements combined with quantitative analyses. Under forward bias, a sharp ultraviolet emission at ~375 nm due to localized excitons recombination can be observed in ZnO. The electroluminescence mechanism of the studied diode is tentatively elucidated using a simplified quantum confinement model. Additionally, the improved performance of the studied diode featuring an ultralow emission onset, a good operation stability and an enhanced ultraviolet emission shows the potential of our approach. This work provides a new route for the design and development of ZnO-based excitonic optoelectronic devices.

© 2016 Optical Society of America

Full Article  |  PDF Article
OSA Recommended Articles
Enhanced ultraviolet emission from Au/Ag-nanoparticles@MgO/ZnO heterostructure light-emitting diodes: A combined effect of exciton- and photon- localized surface plasmon couplings

C. Zhang, H. Y. Xu, W. Z. Liu, L. Yang, J. Zhang, L. X. Zhang, J. N. Wang, J. G. Ma, and Y. C. Liu
Opt. Express 23(12) 15565-15574 (2015)

Visible electroluminescence from a ZnO nanowires/p-GaN heterojunction light emitting diode

C. Baratto, R. Kumar, E. Comini, G. Faglia, and G. Sberveglieri
Opt. Express 23(15) 18937-18942 (2015)

Ultraviolet electroluminescence from hybrid inorganic/organic ZnO/GaN/poly(3-hexylthiophene) dual heterojunctions

Yungting Chen, Hanyu Shih, Chunhsiung Wang, Chunyi Hsieh, Chihwei Chen, Yangfang Chen, and Taiyuan Lin
Opt. Express 19(S3) A319-A325 (2011)

References

  • View by:
  • |
  • |
  • |

  1. M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
    [Crossref] [PubMed]
  2. H. T. Ng, J. Han, T. Yamada, P. Nguyen, Y. P. Chen, and M. Meyyappan, “Single crystal nanowire vertical surround-gate field-effect transistor,” Nano Lett. 4(7), 1247–1252 (2004).
    [Crossref]
  3. Z. L. Wang and J. Song, “Piezoelectric nanogenerators based on Zinc Oxide nanowire arrays,” Science 312(5771), 242–246 (2006).
    [Crossref] [PubMed]
  4. S. Wang, L. Lin, and Z. L. Wang, “Nanoscale triboelectric-effect-enabled energy conversion for sustainably powering portable electronics,” Nano Lett. 12(12), 6339–6346 (2012).
    [Crossref] [PubMed]
  5. S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
    [Crossref] [PubMed]
  6. E. S. P. Leong and S. F. Yu, “UV random lasing action in p-SiC(4H)/i-ZnO−SiO2 nanocomposite/n-ZnO:Al heterojunction diodes,” Adv. Mater. 18(13), 1685–1688 (2006).
    [Crossref]
  7. R. Chen, Q. L. Ye, T. C. He, T. Wu, and H. D. Sun, “Uniaxial tensile strain and exciton−phonon coupling in bent ZnO nanowires,” Appl. Phys. Lett. 98(24), 241916 (2011).
    [Crossref]
  8. H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
    [Crossref]
  9. X. Fang, J. H. Li, D. X. Zhao, D. Z. Shen, B. H. Li, and X. H. Wang, “Phosphorus-doped p-type ZnO nanorods and ZnO nanorod p-n homojunction LED fabricated by hydrothermal method,” J. Phys. Chem. C 113(50), 21208–21212 (2009).
    [Crossref]
  10. X. Yang, C. X. Shan, M. M. Jiang, J. M. Qin, G. C. Hu, S. P. Wang, H. A. Ma, X. P. Jia, and D. Z. Shen, “Intense electroluminescence from ZnO nanowires,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(20), 5292–5296 (2015).
    [Crossref]
  11. H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
    [Crossref]
  12. Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
    [Crossref]
  13. K. K. Kim, S. D. Lee, H. S. Kim, J. C. Park, S. N. Lee, Y. S. Park, S. J. Park, and S. W. Kim, “Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution,” Appl. Phys. Lett. 94(7), 071118 (2009).
    [Crossref]
  14. X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin film,” Adv. Mater. 21(27), 2767–2770 (2009).
    [Crossref]
  15. S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
    [Crossref] [PubMed]
  16. D. K. Wang, F. Wang, Y. P. Wang, Y. Fan, B. Zhao, and D. X. Zhao, “Interfacial emission adjustment in ZnO quantum dots/p-GaN heterojunction light-emitting diodes,” J. Phys. Chem. C 119(5), 2798–2803 (2015).
    [Crossref]
  17. W. I. Park and G. C. Yi, “Electroluminescence in n-ZnO nanorod arrays vertically grown on p-GaN,” Adv. Mater. 16(1), 87–90 (2004).
    [Crossref]
  18. X. Li, J. J. Qi, Q. Zhang, Q. Wang, F. Yi, Z. Z. Wang, and Y. Zhang, “Saturated blue-violet electroluminescence from single ZnO micro/nanowire and p-GaN film hybrid light-emitting diodes,” Appl. Phys. Lett. 102(22), 221103 (2013).
    [Crossref]
  19. O. Lupan, T. Pauporté, and B. Viana, “Low-voltage UV-electroluminescence from ZnO-nanowire Array/p-GaN light-emitting diodes,” Adv. Mater. 22(30), 3298–3302 (2010).
    [Crossref] [PubMed]
  20. Y. C. Yao, Z. P. Yang, J. M. Hwang, Y. L. Chuang, C. C. Lin, J. Y. Haung, C. Y. Chou, J. K. Sheu, M. T. Tsai, and Y. J. Lee, “Enhancing UV-emissions through optical and electronic dual-function tuning of Ag nanoparticles hybridized with n-ZnO nanorods/p-GaN heterojunction light-emitting diodes,” Nanoscale 8(8), 4463–4474 (2016).
    [Crossref] [PubMed]
  21. O. Lupan, T. Pauporté, B. Viana, I. M. Tiginyanu, V. V. Ursaki, and R. Cortès, “Epitaxial electrodeposition of ZnO nanowire arrays on p-GaN for efficient UV-light-emitting diode fabrication,” Appl. Mater. Interf. 2(7), 2083–2090 (2010).
    [Crossref]
  22. Y. Gu, I. L. Kuskovsky, M. Yin, S. O’Brien, and G. F. Neumark, “Quantum confinement in ZnO nanorods,” Appl. Phys. Lett. 85(17), 3833 (2004).
    [Crossref]
  23. S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
    [Crossref]
  24. P. Kröger, M. Ruth, N. Weber, and C. Meier, “Carrier localization in ZnO quantum wires,” Appl. Phys. Lett. 100(26), 263114 (2012).
    [Crossref]
  25. Z. F. Shi, B. Wu, X. P. Cai, X. C. Xia, S. Zhang, W. Yin, H. Wang, J. Wang, X. Dong, Y. T. Zhang, B. L. Zhang, and G. T. Du, “Photofacilitated controllable growth of ZnO films using photoassisted metal organic chemical vapor deposition,” Cryst. Growth Des. 12(9), 4417–4424 (2012).
    [Crossref]
  26. Z. F. Shi, Y. T. Zhang, X. J. Cui, S. W. Zhuang, B. Wu, J. Y. Jiang, X. W. Chu, X. Dong, B. L. Zhang, and G. T. Du, “Epitaxial growth of vertically aligned ZnO nanowires for bidirectional direct-current driven light-emitting diodes applications,” CrystEngComm 17(1), 40–49 (2015).
    [Crossref]
  27. Y. Yang, H. Yan, Z. Fu, B. Yang, L. Xia, Y. Xu, J. Zuo, and F. Li, “Photoluminescence investigation based on laser heating effect in ZnO-ordered nanostructures,” J. Phys. Chem. B 110(2), 846–852 (2006).
    [Crossref] [PubMed]
  28. B. Yan, R. Chen, W. Zhou, J. Zhang, H. Sun, H. Gong, and T. Yu, “Localized suppression of longitudinal-optical-phonon-exciton coupling in bent ZnO nanowires,” Nanotechnology 21(44), 445706 (2010).
    [Crossref] [PubMed]
  29. T. Voss, C. Bekeny, L. Wischmeier, H. Gafsi, S. Borner, W. Schade, A. C. Mofor, A. Bakin, and A. Waag, “Influence of exciton-phonon coupling on the energy position of the near-band-edge photoluminescence of ZnO nanowires,” Appl. Phys. Lett. 89(18), 182107 (2006).
    [Crossref]
  30. Y. N. He, S. G. Shang, W. Y. Cui, X. Li, C. C. Zhu, and X. Hou, “Investigation of luminescence properties of ZnO nanowires at room temperature,” Microelectronics J. 40(3), 517–519 (2009).
    [Crossref]
  31. U. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, “Nature of the 2.8 eV photoluminescence band in Mg doped GaN,” Appl. Phys. Lett. 72(11), 1326 (1998).
    [Crossref]
  32. Q. Yang, W. Wang, S. Xu, and Z. L. Wang, “Enhancing light emission of ZnO microwire-based diodes by piezo-phototronic effect,” Nano Lett. 11(9), 4012–4017 (2011).
    [Crossref] [PubMed]
  33. S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
    [Crossref]
  34. A. Satake, Y. Masumoto, T. Miyajima, T. Asatsuma, and M. Ikeda, “Two-dimensional exciton dynamics and gain formation processes in InxGa1-xN multiple quantum wells,” Phys. Rev. B 60(24), 16660–16666 (1999).
    [Crossref]
  35. Z. Qi, S. Li, S. Sun, W. Zhang, W. Ye, Y. Fang, Y. Tian, J. Dai, and C. Chen, “Large-scale growth of density-tunable aligned ZnO nanorods arrays on GaN QDs,” Nanotechnology 26(41), 415601 (2015).
    [Crossref] [PubMed]

2016 (1)

Y. C. Yao, Z. P. Yang, J. M. Hwang, Y. L. Chuang, C. C. Lin, J. Y. Haung, C. Y. Chou, J. K. Sheu, M. T. Tsai, and Y. J. Lee, “Enhancing UV-emissions through optical and electronic dual-function tuning of Ag nanoparticles hybridized with n-ZnO nanorods/p-GaN heterojunction light-emitting diodes,” Nanoscale 8(8), 4463–4474 (2016).
[Crossref] [PubMed]

2015 (4)

Z. F. Shi, Y. T. Zhang, X. J. Cui, S. W. Zhuang, B. Wu, J. Y. Jiang, X. W. Chu, X. Dong, B. L. Zhang, and G. T. Du, “Epitaxial growth of vertically aligned ZnO nanowires for bidirectional direct-current driven light-emitting diodes applications,” CrystEngComm 17(1), 40–49 (2015).
[Crossref]

Z. Qi, S. Li, S. Sun, W. Zhang, W. Ye, Y. Fang, Y. Tian, J. Dai, and C. Chen, “Large-scale growth of density-tunable aligned ZnO nanorods arrays on GaN QDs,” Nanotechnology 26(41), 415601 (2015).
[Crossref] [PubMed]

X. Yang, C. X. Shan, M. M. Jiang, J. M. Qin, G. C. Hu, S. P. Wang, H. A. Ma, X. P. Jia, and D. Z. Shen, “Intense electroluminescence from ZnO nanowires,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(20), 5292–5296 (2015).
[Crossref]

D. K. Wang, F. Wang, Y. P. Wang, Y. Fan, B. Zhao, and D. X. Zhao, “Interfacial emission adjustment in ZnO quantum dots/p-GaN heterojunction light-emitting diodes,” J. Phys. Chem. C 119(5), 2798–2803 (2015).
[Crossref]

2013 (2)

X. Li, J. J. Qi, Q. Zhang, Q. Wang, F. Yi, Z. Z. Wang, and Y. Zhang, “Saturated blue-violet electroluminescence from single ZnO micro/nanowire and p-GaN film hybrid light-emitting diodes,” Appl. Phys. Lett. 102(22), 221103 (2013).
[Crossref]

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[Crossref]

2012 (5)

P. Kröger, M. Ruth, N. Weber, and C. Meier, “Carrier localization in ZnO quantum wires,” Appl. Phys. Lett. 100(26), 263114 (2012).
[Crossref]

Z. F. Shi, B. Wu, X. P. Cai, X. C. Xia, S. Zhang, W. Yin, H. Wang, J. Wang, X. Dong, Y. T. Zhang, B. L. Zhang, and G. T. Du, “Photofacilitated controllable growth of ZnO films using photoassisted metal organic chemical vapor deposition,” Cryst. Growth Des. 12(9), 4417–4424 (2012).
[Crossref]

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[Crossref]

S. Wang, L. Lin, and Z. L. Wang, “Nanoscale triboelectric-effect-enabled energy conversion for sustainably powering portable electronics,” Nano Lett. 12(12), 6339–6346 (2012).
[Crossref] [PubMed]

H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

2011 (4)

R. Chen, Q. L. Ye, T. C. He, T. Wu, and H. D. Sun, “Uniaxial tensile strain and exciton−phonon coupling in bent ZnO nanowires,” Appl. Phys. Lett. 98(24), 241916 (2011).
[Crossref]

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref] [PubMed]

Q. Yang, W. Wang, S. Xu, and Z. L. Wang, “Enhancing light emission of ZnO microwire-based diodes by piezo-phototronic effect,” Nano Lett. 11(9), 4012–4017 (2011).
[Crossref] [PubMed]

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

2010 (4)

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

O. Lupan, T. Pauporté, B. Viana, I. M. Tiginyanu, V. V. Ursaki, and R. Cortès, “Epitaxial electrodeposition of ZnO nanowire arrays on p-GaN for efficient UV-light-emitting diode fabrication,” Appl. Mater. Interf. 2(7), 2083–2090 (2010).
[Crossref]

B. Yan, R. Chen, W. Zhou, J. Zhang, H. Sun, H. Gong, and T. Yu, “Localized suppression of longitudinal-optical-phonon-exciton coupling in bent ZnO nanowires,” Nanotechnology 21(44), 445706 (2010).
[Crossref] [PubMed]

O. Lupan, T. Pauporté, and B. Viana, “Low-voltage UV-electroluminescence from ZnO-nanowire Array/p-GaN light-emitting diodes,” Adv. Mater. 22(30), 3298–3302 (2010).
[Crossref] [PubMed]

2009 (4)

K. K. Kim, S. D. Lee, H. S. Kim, J. C. Park, S. N. Lee, Y. S. Park, S. J. Park, and S. W. Kim, “Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution,” Appl. Phys. Lett. 94(7), 071118 (2009).
[Crossref]

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

X. Fang, J. H. Li, D. X. Zhao, D. Z. Shen, B. H. Li, and X. H. Wang, “Phosphorus-doped p-type ZnO nanorods and ZnO nanorod p-n homojunction LED fabricated by hydrothermal method,” J. Phys. Chem. C 113(50), 21208–21212 (2009).
[Crossref]

Y. N. He, S. G. Shang, W. Y. Cui, X. Li, C. C. Zhu, and X. Hou, “Investigation of luminescence properties of ZnO nanowires at room temperature,” Microelectronics J. 40(3), 517–519 (2009).
[Crossref]

2006 (4)

T. Voss, C. Bekeny, L. Wischmeier, H. Gafsi, S. Borner, W. Schade, A. C. Mofor, A. Bakin, and A. Waag, “Influence of exciton-phonon coupling on the energy position of the near-band-edge photoluminescence of ZnO nanowires,” Appl. Phys. Lett. 89(18), 182107 (2006).
[Crossref]

Y. Yang, H. Yan, Z. Fu, B. Yang, L. Xia, Y. Xu, J. Zuo, and F. Li, “Photoluminescence investigation based on laser heating effect in ZnO-ordered nanostructures,” J. Phys. Chem. B 110(2), 846–852 (2006).
[Crossref] [PubMed]

Z. L. Wang and J. Song, “Piezoelectric nanogenerators based on Zinc Oxide nanowire arrays,” Science 312(5771), 242–246 (2006).
[Crossref] [PubMed]

E. S. P. Leong and S. F. Yu, “UV random lasing action in p-SiC(4H)/i-ZnO−SiO2 nanocomposite/n-ZnO:Al heterojunction diodes,” Adv. Mater. 18(13), 1685–1688 (2006).
[Crossref]

2004 (3)

H. T. Ng, J. Han, T. Yamada, P. Nguyen, Y. P. Chen, and M. Meyyappan, “Single crystal nanowire vertical surround-gate field-effect transistor,” Nano Lett. 4(7), 1247–1252 (2004).
[Crossref]

W. I. Park and G. C. Yi, “Electroluminescence in n-ZnO nanorod arrays vertically grown on p-GaN,” Adv. Mater. 16(1), 87–90 (2004).
[Crossref]

Y. Gu, I. L. Kuskovsky, M. Yin, S. O’Brien, and G. F. Neumark, “Quantum confinement in ZnO nanorods,” Appl. Phys. Lett. 85(17), 3833 (2004).
[Crossref]

2003 (1)

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
[Crossref]

2001 (1)

M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
[Crossref] [PubMed]

1999 (1)

A. Satake, Y. Masumoto, T. Miyajima, T. Asatsuma, and M. Ikeda, “Two-dimensional exciton dynamics and gain formation processes in InxGa1-xN multiple quantum wells,” Phys. Rev. B 60(24), 16660–16666 (1999).
[Crossref]

1998 (1)

U. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, “Nature of the 2.8 eV photoluminescence band in Mg doped GaN,” Appl. Phys. Lett. 72(11), 1326 (1998).
[Crossref]

Alivov, Y. I.

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
[Crossref]

Asatsuma, T.

A. Satake, Y. Masumoto, T. Miyajima, T. Asatsuma, and M. Ikeda, “Two-dimensional exciton dynamics and gain formation processes in InxGa1-xN multiple quantum wells,” Phys. Rev. B 60(24), 16660–16666 (1999).
[Crossref]

Ataev, B. M.

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
[Crossref]

Bakin, A.

T. Voss, C. Bekeny, L. Wischmeier, H. Gafsi, S. Borner, W. Schade, A. C. Mofor, A. Bakin, and A. Waag, “Influence of exciton-phonon coupling on the energy position of the near-band-edge photoluminescence of ZnO nanowires,” Appl. Phys. Lett. 89(18), 182107 (2006).
[Crossref]

Bekeny, C.

T. Voss, C. Bekeny, L. Wischmeier, H. Gafsi, S. Borner, W. Schade, A. C. Mofor, A. Bakin, and A. Waag, “Influence of exciton-phonon coupling on the energy position of the near-band-edge photoluminescence of ZnO nanowires,” Appl. Phys. Lett. 89(18), 182107 (2006).
[Crossref]

Borner, S.

T. Voss, C. Bekeny, L. Wischmeier, H. Gafsi, S. Borner, W. Schade, A. C. Mofor, A. Bakin, and A. Waag, “Influence of exciton-phonon coupling on the energy position of the near-band-edge photoluminescence of ZnO nanowires,” Appl. Phys. Lett. 89(18), 182107 (2006).
[Crossref]

Cai, X. P.

Z. F. Shi, B. Wu, X. P. Cai, X. C. Xia, S. Zhang, W. Yin, H. Wang, J. Wang, X. Dong, Y. T. Zhang, B. L. Zhang, and G. T. Du, “Photofacilitated controllable growth of ZnO films using photoassisted metal organic chemical vapor deposition,” Cryst. Growth Des. 12(9), 4417–4424 (2012).
[Crossref]

Carroll, D. L.

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[Crossref]

H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

Chen, C.

Z. Qi, S. Li, S. Sun, W. Zhang, W. Ye, Y. Fang, Y. Tian, J. Dai, and C. Chen, “Large-scale growth of density-tunable aligned ZnO nanorods arrays on GaN QDs,” Nanotechnology 26(41), 415601 (2015).
[Crossref] [PubMed]

Chen, L. J.

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

Chen, R.

R. Chen, Q. L. Ye, T. C. He, T. Wu, and H. D. Sun, “Uniaxial tensile strain and exciton−phonon coupling in bent ZnO nanowires,” Appl. Phys. Lett. 98(24), 241916 (2011).
[Crossref]

B. Yan, R. Chen, W. Zhou, J. Zhang, H. Sun, H. Gong, and T. Yu, “Localized suppression of longitudinal-optical-phonon-exciton coupling in bent ZnO nanowires,” Nanotechnology 21(44), 445706 (2010).
[Crossref] [PubMed]

Chen, Y. P.

H. T. Ng, J. Han, T. Yamada, P. Nguyen, Y. P. Chen, and M. Meyyappan, “Single crystal nanowire vertical surround-gate field-effect transistor,” Nano Lett. 4(7), 1247–1252 (2004).
[Crossref]

Chernyak, L.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref] [PubMed]

Choi, S.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Chou, C. Y.

Y. C. Yao, Z. P. Yang, J. M. Hwang, Y. L. Chuang, C. C. Lin, J. Y. Haung, C. Y. Chou, J. K. Sheu, M. T. Tsai, and Y. J. Lee, “Enhancing UV-emissions through optical and electronic dual-function tuning of Ag nanoparticles hybridized with n-ZnO nanorods/p-GaN heterojunction light-emitting diodes,” Nanoscale 8(8), 4463–4474 (2016).
[Crossref] [PubMed]

Chow, P. P.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

Chu, S.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref] [PubMed]

Chu, X. W.

Z. F. Shi, Y. T. Zhang, X. J. Cui, S. W. Zhuang, B. Wu, J. Y. Jiang, X. W. Chu, X. Dong, B. L. Zhang, and G. T. Du, “Epitaxial growth of vertically aligned ZnO nanowires for bidirectional direct-current driven light-emitting diodes applications,” CrystEngComm 17(1), 40–49 (2015).
[Crossref]

Chuang, Y. L.

Y. C. Yao, Z. P. Yang, J. M. Hwang, Y. L. Chuang, C. C. Lin, J. Y. Haung, C. Y. Chou, J. K. Sheu, M. T. Tsai, and Y. J. Lee, “Enhancing UV-emissions through optical and electronic dual-function tuning of Ag nanoparticles hybridized with n-ZnO nanorods/p-GaN heterojunction light-emitting diodes,” Nanoscale 8(8), 4463–4474 (2016).
[Crossref] [PubMed]

Chukichev, M. V.

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
[Crossref]

Cortès, R.

O. Lupan, T. Pauporté, B. Viana, I. M. Tiginyanu, V. V. Ursaki, and R. Cortès, “Epitaxial electrodeposition of ZnO nanowire arrays on p-GaN for efficient UV-light-emitting diode fabrication,” Appl. Mater. Interf. 2(7), 2083–2090 (2010).
[Crossref]

Cui, B.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

Cui, W. Y.

Y. N. He, S. G. Shang, W. Y. Cui, X. Li, C. C. Zhu, and X. Hou, “Investigation of luminescence properties of ZnO nanowires at room temperature,” Microelectronics J. 40(3), 517–519 (2009).
[Crossref]

Cui, X. J.

Z. F. Shi, Y. T. Zhang, X. J. Cui, S. W. Zhuang, B. Wu, J. Y. Jiang, X. W. Chu, X. Dong, B. L. Zhang, and G. T. Du, “Epitaxial growth of vertically aligned ZnO nanowires for bidirectional direct-current driven light-emitting diodes applications,” CrystEngComm 17(1), 40–49 (2015).
[Crossref]

Dabiran, A. M.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

Dai, J.

Z. Qi, S. Li, S. Sun, W. Zhang, W. Ye, Y. Fang, Y. Tian, J. Dai, and C. Chen, “Large-scale growth of density-tunable aligned ZnO nanorods arrays on GaN QDs,” Nanotechnology 26(41), 415601 (2015).
[Crossref] [PubMed]

Dong, J. J.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

Dong, X.

Z. F. Shi, Y. T. Zhang, X. J. Cui, S. W. Zhuang, B. Wu, J. Y. Jiang, X. W. Chu, X. Dong, B. L. Zhang, and G. T. Du, “Epitaxial growth of vertically aligned ZnO nanowires for bidirectional direct-current driven light-emitting diodes applications,” CrystEngComm 17(1), 40–49 (2015).
[Crossref]

Z. F. Shi, B. Wu, X. P. Cai, X. C. Xia, S. Zhang, W. Yin, H. Wang, J. Wang, X. Dong, Y. T. Zhang, B. L. Zhang, and G. T. Du, “Photofacilitated controllable growth of ZnO films using photoassisted metal organic chemical vapor deposition,” Cryst. Growth Des. 12(9), 4417–4424 (2012).
[Crossref]

Du, G. T.

Z. F. Shi, Y. T. Zhang, X. J. Cui, S. W. Zhuang, B. Wu, J. Y. Jiang, X. W. Chu, X. Dong, B. L. Zhang, and G. T. Du, “Epitaxial growth of vertically aligned ZnO nanowires for bidirectional direct-current driven light-emitting diodes applications,” CrystEngComm 17(1), 40–49 (2015).
[Crossref]

Z. F. Shi, B. Wu, X. P. Cai, X. C. Xia, S. Zhang, W. Yin, H. Wang, J. Wang, X. Dong, Y. T. Zhang, B. L. Zhang, and G. T. Du, “Photofacilitated controllable growth of ZnO films using photoassisted metal organic chemical vapor deposition,” Cryst. Growth Des. 12(9), 4417–4424 (2012).
[Crossref]

Dupuis, R.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Fan, Y.

D. K. Wang, F. Wang, Y. P. Wang, Y. Fan, B. Zhao, and D. X. Zhao, “Interfacial emission adjustment in ZnO quantum dots/p-GaN heterojunction light-emitting diodes,” J. Phys. Chem. C 119(5), 2798–2803 (2015).
[Crossref]

Fang, G. J.

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[Crossref]

H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[Crossref]

Fang, X.

X. Fang, J. H. Li, D. X. Zhao, D. Z. Shen, B. H. Li, and X. H. Wang, “Phosphorus-doped p-type ZnO nanorods and ZnO nanorod p-n homojunction LED fabricated by hydrothermal method,” J. Phys. Chem. C 113(50), 21208–21212 (2009).
[Crossref]

Fang, Y.

Z. Qi, S. Li, S. Sun, W. Zhang, W. Ye, Y. Fang, Y. Tian, J. Dai, and C. Chen, “Large-scale growth of density-tunable aligned ZnO nanorods arrays on GaN QDs,” Nanotechnology 26(41), 415601 (2015).
[Crossref] [PubMed]

Feick, H.

M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
[Crossref] [PubMed]

Fu, Z.

Y. Yang, H. Yan, Z. Fu, B. Yang, L. Xia, Y. Xu, J. Zuo, and F. Li, “Photoluminescence investigation based on laser heating effect in ZnO-ordered nanostructures,” J. Phys. Chem. B 110(2), 846–852 (2006).
[Crossref] [PubMed]

Gafsi, H.

T. Voss, C. Bekeny, L. Wischmeier, H. Gafsi, S. Borner, W. Schade, A. C. Mofor, A. Bakin, and A. Waag, “Influence of exciton-phonon coupling on the energy position of the near-band-edge photoluminescence of ZnO nanowires,” Appl. Phys. Lett. 89(18), 182107 (2006).
[Crossref]

Gong, H.

B. Yan, R. Chen, W. Zhou, J. Zhang, H. Sun, H. Gong, and T. Yu, “Localized suppression of longitudinal-optical-phonon-exciton coupling in bent ZnO nanowires,” Nanotechnology 21(44), 445706 (2010).
[Crossref] [PubMed]

Gu, Y.

Y. Gu, I. L. Kuskovsky, M. Yin, S. O’Brien, and G. F. Neumark, “Quantum confinement in ZnO nanorods,” Appl. Phys. Lett. 85(17), 3833 (2004).
[Crossref]

Guan, W. J.

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[Crossref]

Han, J.

H. T. Ng, J. Han, T. Yamada, P. Nguyen, Y. P. Chen, and M. Meyyappan, “Single crystal nanowire vertical surround-gate field-effect transistor,” Nano Lett. 4(7), 1247–1252 (2004).
[Crossref]

Haung, J. Y.

Y. C. Yao, Z. P. Yang, J. M. Hwang, Y. L. Chuang, C. C. Lin, J. Y. Haung, C. Y. Chou, J. K. Sheu, M. T. Tsai, and Y. J. Lee, “Enhancing UV-emissions through optical and electronic dual-function tuning of Ag nanoparticles hybridized with n-ZnO nanorods/p-GaN heterojunction light-emitting diodes,” Nanoscale 8(8), 4463–4474 (2016).
[Crossref] [PubMed]

He, T. C.

R. Chen, Q. L. Ye, T. C. He, T. Wu, and H. D. Sun, “Uniaxial tensile strain and exciton−phonon coupling in bent ZnO nanowires,” Appl. Phys. Lett. 98(24), 241916 (2011).
[Crossref]

He, Y. N.

Y. N. He, S. G. Shang, W. Y. Cui, X. Li, C. C. Zhu, and X. Hou, “Investigation of luminescence properties of ZnO nanowires at room temperature,” Microelectronics J. 40(3), 517–519 (2009).
[Crossref]

Hou, X.

Y. N. He, S. G. Shang, W. Y. Cui, X. Li, C. C. Zhu, and X. Hou, “Investigation of luminescence properties of ZnO nanowires at room temperature,” Microelectronics J. 40(3), 517–519 (2009).
[Crossref]

Hu, G. C.

X. Yang, C. X. Shan, M. M. Jiang, J. M. Qin, G. C. Hu, S. P. Wang, H. A. Ma, X. P. Jia, and D. Z. Shen, “Intense electroluminescence from ZnO nanowires,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(20), 5292–5296 (2015).
[Crossref]

Hu, Y.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Huang, F.

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[Crossref]

Huang, H. H.

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[Crossref]

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[Crossref]

H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

Huang, M. H.

M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
[Crossref] [PubMed]

Hwang, J. M.

Y. C. Yao, Z. P. Yang, J. M. Hwang, Y. L. Chuang, C. C. Lin, J. Y. Haung, C. Y. Chou, J. K. Sheu, M. T. Tsai, and Y. J. Lee, “Enhancing UV-emissions through optical and electronic dual-function tuning of Ag nanoparticles hybridized with n-ZnO nanorods/p-GaN heterojunction light-emitting diodes,” Nanoscale 8(8), 4463–4474 (2016).
[Crossref] [PubMed]

Ikeda, M.

A. Satake, Y. Masumoto, T. Miyajima, T. Asatsuma, and M. Ikeda, “Two-dimensional exciton dynamics and gain formation processes in InxGa1-xN multiple quantum wells,” Phys. Rev. B 60(24), 16660–16666 (1999).
[Crossref]

Jia, X. P.

X. Yang, C. X. Shan, M. M. Jiang, J. M. Qin, G. C. Hu, S. P. Wang, H. A. Ma, X. P. Jia, and D. Z. Shen, “Intense electroluminescence from ZnO nanowires,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(20), 5292–5296 (2015).
[Crossref]

Jiang, J. Y.

Z. F. Shi, Y. T. Zhang, X. J. Cui, S. W. Zhuang, B. Wu, J. Y. Jiang, X. W. Chu, X. Dong, B. L. Zhang, and G. T. Du, “Epitaxial growth of vertically aligned ZnO nanowires for bidirectional direct-current driven light-emitting diodes applications,” CrystEngComm 17(1), 40–49 (2015).
[Crossref]

Jiang, M. M.

X. Yang, C. X. Shan, M. M. Jiang, J. M. Qin, G. C. Hu, S. P. Wang, H. A. Ma, X. P. Jia, and D. Z. Shen, “Intense electroluminescence from ZnO nanowires,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(20), 5292–5296 (2015).
[Crossref]

Kaufmann, U.

U. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, “Nature of the 2.8 eV photoluminescence band in Mg doped GaN,” Appl. Phys. Lett. 72(11), 1326 (1998).
[Crossref]

Kim, H. J.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Kim, H. S.

K. K. Kim, S. D. Lee, H. S. Kim, J. C. Park, S. N. Lee, Y. S. Park, S. J. Park, and S. W. Kim, “Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution,” Appl. Phys. Lett. 94(7), 071118 (2009).
[Crossref]

Kim, K. K.

K. K. Kim, S. D. Lee, H. S. Kim, J. C. Park, S. N. Lee, Y. S. Park, S. J. Park, and S. W. Kim, “Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution,” Appl. Phys. Lett. 94(7), 071118 (2009).
[Crossref]

Kim, S. W.

K. K. Kim, S. D. Lee, H. S. Kim, J. C. Park, S. N. Lee, Y. S. Park, S. J. Park, and S. W. Kim, “Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution,” Appl. Phys. Lett. 94(7), 071118 (2009).
[Crossref]

Kind, H.

M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
[Crossref] [PubMed]

Kong, J.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref] [PubMed]

Kröger, P.

P. Kröger, M. Ruth, N. Weber, and C. Meier, “Carrier localization in ZnO quantum wires,” Appl. Phys. Lett. 100(26), 263114 (2012).
[Crossref]

Kunzer, M.

U. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, “Nature of the 2.8 eV photoluminescence band in Mg doped GaN,” Appl. Phys. Lett. 72(11), 1326 (1998).
[Crossref]

Kuskovsky, I. L.

Y. Gu, I. L. Kuskovsky, M. Yin, S. O’Brien, and G. F. Neumark, “Quantum confinement in ZnO nanorods,” Appl. Phys. Lett. 85(17), 3833 (2004).
[Crossref]

Lee, S. D.

K. K. Kim, S. D. Lee, H. S. Kim, J. C. Park, S. N. Lee, Y. S. Park, S. J. Park, and S. W. Kim, “Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution,” Appl. Phys. Lett. 94(7), 071118 (2009).
[Crossref]

Lee, S. N.

K. K. Kim, S. D. Lee, H. S. Kim, J. C. Park, S. N. Lee, Y. S. Park, S. J. Park, and S. W. Kim, “Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution,” Appl. Phys. Lett. 94(7), 071118 (2009).
[Crossref]

Lee, Y. J.

Y. C. Yao, Z. P. Yang, J. M. Hwang, Y. L. Chuang, C. C. Lin, J. Y. Haung, C. Y. Chou, J. K. Sheu, M. T. Tsai, and Y. J. Lee, “Enhancing UV-emissions through optical and electronic dual-function tuning of Ag nanoparticles hybridized with n-ZnO nanorods/p-GaN heterojunction light-emitting diodes,” Nanoscale 8(8), 4463–4474 (2016).
[Crossref] [PubMed]

Leong, E. S. P.

E. S. P. Leong and S. F. Yu, “UV random lasing action in p-SiC(4H)/i-ZnO−SiO2 nanocomposite/n-ZnO:Al heterojunction diodes,” Adv. Mater. 18(13), 1685–1688 (2006).
[Crossref]

Li, B. H.

X. Fang, J. H. Li, D. X. Zhao, D. Z. Shen, B. H. Li, and X. H. Wang, “Phosphorus-doped p-type ZnO nanorods and ZnO nanorod p-n homojunction LED fabricated by hydrothermal method,” J. Phys. Chem. C 113(50), 21208–21212 (2009).
[Crossref]

Li, F.

Y. Yang, H. Yan, Z. Fu, B. Yang, L. Xia, Y. Xu, J. Zuo, and F. Li, “Photoluminescence investigation based on laser heating effect in ZnO-ordered nanostructures,” J. Phys. Chem. B 110(2), 846–852 (2006).
[Crossref] [PubMed]

Li, J. H.

X. Fang, J. H. Li, D. X. Zhao, D. Z. Shen, B. H. Li, and X. H. Wang, “Phosphorus-doped p-type ZnO nanorods and ZnO nanorod p-n homojunction LED fabricated by hydrothermal method,” J. Phys. Chem. C 113(50), 21208–21212 (2009).
[Crossref]

Li, L.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref] [PubMed]

Li, S.

Z. Qi, S. Li, S. Sun, W. Zhang, W. Ye, Y. Fang, Y. Tian, J. Dai, and C. Chen, “Large-scale growth of density-tunable aligned ZnO nanorods arrays on GaN QDs,” Nanotechnology 26(41), 415601 (2015).
[Crossref] [PubMed]

Li, S. Z.

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[Crossref]

H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[Crossref]

Li, X.

X. Li, J. J. Qi, Q. Zhang, Q. Wang, F. Yi, Z. Z. Wang, and Y. Zhang, “Saturated blue-violet electroluminescence from single ZnO micro/nanowire and p-GaN film hybrid light-emitting diodes,” Appl. Phys. Lett. 102(22), 221103 (2013).
[Crossref]

Y. N. He, S. G. Shang, W. Y. Cui, X. Li, C. C. Zhu, and X. Hou, “Investigation of luminescence properties of ZnO nanowires at room temperature,” Microelectronics J. 40(3), 517–519 (2009).
[Crossref]

Li, Y.

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[Crossref]

H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

Lin, C. C.

Y. C. Yao, Z. P. Yang, J. M. Hwang, Y. L. Chuang, C. C. Lin, J. Y. Haung, C. Y. Chou, J. K. Sheu, M. T. Tsai, and Y. J. Lee, “Enhancing UV-emissions through optical and electronic dual-function tuning of Ag nanoparticles hybridized with n-ZnO nanorods/p-GaN heterojunction light-emitting diodes,” Nanoscale 8(8), 4463–4474 (2016).
[Crossref] [PubMed]

Lin, L.

S. Wang, L. Lin, and Z. L. Wang, “Nanoscale triboelectric-effect-enabled energy conversion for sustainably powering portable electronics,” Nano Lett. 12(12), 6339–6346 (2012).
[Crossref] [PubMed]

Lin, W. W.

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[Crossref]

Lin, Y.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref] [PubMed]

Liu, J.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref] [PubMed]

Liu, Y.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Lochner, Z.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Long, H.

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[Crossref]

H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[Crossref]

Look, D. C.

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
[Crossref]

Lu, M. Y.

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

Lupan, O.

O. Lupan, T. Pauporté, B. Viana, I. M. Tiginyanu, V. V. Ursaki, and R. Cortès, “Epitaxial electrodeposition of ZnO nanowire arrays on p-GaN for efficient UV-light-emitting diode fabrication,” Appl. Mater. Interf. 2(7), 2083–2090 (2010).
[Crossref]

O. Lupan, T. Pauporté, and B. Viana, “Low-voltage UV-electroluminescence from ZnO-nanowire Array/p-GaN light-emitting diodes,” Adv. Mater. 22(30), 3298–3302 (2010).
[Crossref] [PubMed]

Ma, H. A.

X. Yang, C. X. Shan, M. M. Jiang, J. M. Qin, G. C. Hu, S. P. Wang, H. A. Ma, X. P. Jia, and D. Z. Shen, “Intense electroluminescence from ZnO nanowires,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(20), 5292–5296 (2015).
[Crossref]

Maier, M.

U. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, “Nature of the 2.8 eV photoluminescence band in Mg doped GaN,” Appl. Phys. Lett. 72(11), 1326 (1998).
[Crossref]

Mao, S.

M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
[Crossref] [PubMed]

Masumoto, Y.

A. Satake, Y. Masumoto, T. Miyajima, T. Asatsuma, and M. Ikeda, “Two-dimensional exciton dynamics and gain formation processes in InxGa1-xN multiple quantum wells,” Phys. Rev. B 60(24), 16660–16666 (1999).
[Crossref]

Meier, C.

P. Kröger, M. Ruth, N. Weber, and C. Meier, “Carrier localization in ZnO quantum wires,” Appl. Phys. Lett. 100(26), 263114 (2012).
[Crossref]

Meyyappan, M.

H. T. Ng, J. Han, T. Yamada, P. Nguyen, Y. P. Chen, and M. Meyyappan, “Single crystal nanowire vertical surround-gate field-effect transistor,” Nano Lett. 4(7), 1247–1252 (2004).
[Crossref]

Miyajima, T.

A. Satake, Y. Masumoto, T. Miyajima, T. Asatsuma, and M. Ikeda, “Two-dimensional exciton dynamics and gain formation processes in InxGa1-xN multiple quantum wells,” Phys. Rev. B 60(24), 16660–16666 (1999).
[Crossref]

Mo, X. M.

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[Crossref]

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[Crossref]

H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

Mofor, A. C.

T. Voss, C. Bekeny, L. Wischmeier, H. Gafsi, S. Borner, W. Schade, A. C. Mofor, A. Bakin, and A. Waag, “Influence of exciton-phonon coupling on the energy position of the near-band-edge photoluminescence of ZnO nanowires,” Appl. Phys. Lett. 89(18), 182107 (2006).
[Crossref]

Neumark, G. F.

Y. Gu, I. L. Kuskovsky, M. Yin, S. O’Brien, and G. F. Neumark, “Quantum confinement in ZnO nanorods,” Appl. Phys. Lett. 85(17), 3833 (2004).
[Crossref]

Ng, H. T.

H. T. Ng, J. Han, T. Yamada, P. Nguyen, Y. P. Chen, and M. Meyyappan, “Single crystal nanowire vertical surround-gate field-effect transistor,” Nano Lett. 4(7), 1247–1252 (2004).
[Crossref]

Nguyen, P.

H. T. Ng, J. Han, T. Yamada, P. Nguyen, Y. P. Chen, and M. Meyyappan, “Single crystal nanowire vertical surround-gate field-effect transistor,” Nano Lett. 4(7), 1247–1252 (2004).
[Crossref]

O’Brien, S.

Y. Gu, I. L. Kuskovsky, M. Yin, S. O’Brien, and G. F. Neumark, “Quantum confinement in ZnO nanorods,” Appl. Phys. Lett. 85(17), 3833 (2004).
[Crossref]

Obloh, H.

U. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, “Nature of the 2.8 eV photoluminescence band in Mg doped GaN,” Appl. Phys. Lett. 72(11), 1326 (1998).
[Crossref]

Pan, C. X.

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[Crossref]

Park, J. C.

K. K. Kim, S. D. Lee, H. S. Kim, J. C. Park, S. N. Lee, Y. S. Park, S. J. Park, and S. W. Kim, “Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution,” Appl. Phys. Lett. 94(7), 071118 (2009).
[Crossref]

Park, S. J.

K. K. Kim, S. D. Lee, H. S. Kim, J. C. Park, S. N. Lee, Y. S. Park, S. J. Park, and S. W. Kim, “Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution,” Appl. Phys. Lett. 94(7), 071118 (2009).
[Crossref]

Park, W. I.

W. I. Park and G. C. Yi, “Electroluminescence in n-ZnO nanorod arrays vertically grown on p-GaN,” Adv. Mater. 16(1), 87–90 (2004).
[Crossref]

Park, Y. S.

K. K. Kim, S. D. Lee, H. S. Kim, J. C. Park, S. N. Lee, Y. S. Park, S. J. Park, and S. W. Kim, “Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution,” Appl. Phys. Lett. 94(7), 071118 (2009).
[Crossref]

Pauporté, T.

O. Lupan, T. Pauporté, and B. Viana, “Low-voltage UV-electroluminescence from ZnO-nanowire Array/p-GaN light-emitting diodes,” Adv. Mater. 22(30), 3298–3302 (2010).
[Crossref] [PubMed]

O. Lupan, T. Pauporté, B. Viana, I. M. Tiginyanu, V. V. Ursaki, and R. Cortès, “Epitaxial electrodeposition of ZnO nanowire arrays on p-GaN for efficient UV-light-emitting diode fabrication,” Appl. Mater. Interf. 2(7), 2083–2090 (2010).
[Crossref]

Qi, J. J.

X. Li, J. J. Qi, Q. Zhang, Q. Wang, F. Yi, Z. Z. Wang, and Y. Zhang, “Saturated blue-violet electroluminescence from single ZnO micro/nanowire and p-GaN film hybrid light-emitting diodes,” Appl. Phys. Lett. 102(22), 221103 (2013).
[Crossref]

Qi, Z.

Z. Qi, S. Li, S. Sun, W. Zhang, W. Ye, Y. Fang, Y. Tian, J. Dai, and C. Chen, “Large-scale growth of density-tunable aligned ZnO nanorods arrays on GaN QDs,” Nanotechnology 26(41), 415601 (2015).
[Crossref] [PubMed]

Qin, J. M.

X. Yang, C. X. Shan, M. M. Jiang, J. M. Qin, G. C. Hu, S. P. Wang, H. A. Ma, X. P. Jia, and D. Z. Shen, “Intense electroluminescence from ZnO nanowires,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(20), 5292–5296 (2015).
[Crossref]

Qu, S.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

Ramakrishnan, A.

U. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, “Nature of the 2.8 eV photoluminescence band in Mg doped GaN,” Appl. Phys. Lett. 72(11), 1326 (1998).
[Crossref]

Ren, J.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref] [PubMed]

Russo, R.

M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
[Crossref] [PubMed]

Ruth, M.

P. Kröger, M. Ruth, N. Weber, and C. Meier, “Carrier localization in ZnO quantum wires,” Appl. Phys. Lett. 100(26), 263114 (2012).
[Crossref]

Ryou, J. H.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Santic, B.

U. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, “Nature of the 2.8 eV photoluminescence band in Mg doped GaN,” Appl. Phys. Lett. 72(11), 1326 (1998).
[Crossref]

Satake, A.

A. Satake, Y. Masumoto, T. Miyajima, T. Asatsuma, and M. Ikeda, “Two-dimensional exciton dynamics and gain formation processes in InxGa1-xN multiple quantum wells,” Phys. Rev. B 60(24), 16660–16666 (1999).
[Crossref]

Schade, W.

T. Voss, C. Bekeny, L. Wischmeier, H. Gafsi, S. Borner, W. Schade, A. C. Mofor, A. Bakin, and A. Waag, “Influence of exciton-phonon coupling on the energy position of the near-band-edge photoluminescence of ZnO nanowires,” Appl. Phys. Lett. 89(18), 182107 (2006).
[Crossref]

Schlotter, P.

U. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, “Nature of the 2.8 eV photoluminescence band in Mg doped GaN,” Appl. Phys. Lett. 72(11), 1326 (1998).
[Crossref]

Shan, C. X.

X. Yang, C. X. Shan, M. M. Jiang, J. M. Qin, G. C. Hu, S. P. Wang, H. A. Ma, X. P. Jia, and D. Z. Shen, “Intense electroluminescence from ZnO nanowires,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(20), 5292–5296 (2015).
[Crossref]

Shang, S. G.

Y. N. He, S. G. Shang, W. Y. Cui, X. Li, C. C. Zhu, and X. Hou, “Investigation of luminescence properties of ZnO nanowires at room temperature,” Microelectronics J. 40(3), 517–519 (2009).
[Crossref]

Shen, D. Z.

X. Yang, C. X. Shan, M. M. Jiang, J. M. Qin, G. C. Hu, S. P. Wang, H. A. Ma, X. P. Jia, and D. Z. Shen, “Intense electroluminescence from ZnO nanowires,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(20), 5292–5296 (2015).
[Crossref]

X. Fang, J. H. Li, D. X. Zhao, D. Z. Shen, B. H. Li, and X. H. Wang, “Phosphorus-doped p-type ZnO nanorods and ZnO nanorod p-n homojunction LED fabricated by hydrothermal method,” J. Phys. Chem. C 113(50), 21208–21212 (2009).
[Crossref]

Sheu, J. K.

Y. C. Yao, Z. P. Yang, J. M. Hwang, Y. L. Chuang, C. C. Lin, J. Y. Haung, C. Y. Chou, J. K. Sheu, M. T. Tsai, and Y. J. Lee, “Enhancing UV-emissions through optical and electronic dual-function tuning of Ag nanoparticles hybridized with n-ZnO nanorods/p-GaN heterojunction light-emitting diodes,” Nanoscale 8(8), 4463–4474 (2016).
[Crossref] [PubMed]

Shi, Z. F.

Z. F. Shi, Y. T. Zhang, X. J. Cui, S. W. Zhuang, B. Wu, J. Y. Jiang, X. W. Chu, X. Dong, B. L. Zhang, and G. T. Du, “Epitaxial growth of vertically aligned ZnO nanowires for bidirectional direct-current driven light-emitting diodes applications,” CrystEngComm 17(1), 40–49 (2015).
[Crossref]

Z. F. Shi, B. Wu, X. P. Cai, X. C. Xia, S. Zhang, W. Yin, H. Wang, J. Wang, X. Dong, Y. T. Zhang, B. L. Zhang, and G. T. Du, “Photofacilitated controllable growth of ZnO films using photoassisted metal organic chemical vapor deposition,” Cryst. Growth Des. 12(9), 4417–4424 (2012).
[Crossref]

Song, J.

Z. L. Wang and J. Song, “Piezoelectric nanogenerators based on Zinc Oxide nanowire arrays,” Science 312(5771), 242–246 (2006).
[Crossref] [PubMed]

Sun, H.

B. Yan, R. Chen, W. Zhou, J. Zhang, H. Sun, H. Gong, and T. Yu, “Localized suppression of longitudinal-optical-phonon-exciton coupling in bent ZnO nanowires,” Nanotechnology 21(44), 445706 (2010).
[Crossref] [PubMed]

Sun, H. D.

R. Chen, Q. L. Ye, T. C. He, T. Wu, and H. D. Sun, “Uniaxial tensile strain and exciton−phonon coupling in bent ZnO nanowires,” Appl. Phys. Lett. 98(24), 241916 (2011).
[Crossref]

Sun, S.

Z. Qi, S. Li, S. Sun, W. Zhang, W. Ye, Y. Fang, Y. Tian, J. Dai, and C. Chen, “Large-scale growth of density-tunable aligned ZnO nanorods arrays on GaN QDs,” Nanotechnology 26(41), 415601 (2015).
[Crossref] [PubMed]

Tian, Y.

Z. Qi, S. Li, S. Sun, W. Zhang, W. Ye, Y. Fang, Y. Tian, J. Dai, and C. Chen, “Large-scale growth of density-tunable aligned ZnO nanorods arrays on GaN QDs,” Nanotechnology 26(41), 415601 (2015).
[Crossref] [PubMed]

Tiginyanu, I. M.

O. Lupan, T. Pauporté, B. Viana, I. M. Tiginyanu, V. V. Ursaki, and R. Cortès, “Epitaxial electrodeposition of ZnO nanowire arrays on p-GaN for efficient UV-light-emitting diode fabrication,” Appl. Mater. Interf. 2(7), 2083–2090 (2010).
[Crossref]

Tsai, M. T.

Y. C. Yao, Z. P. Yang, J. M. Hwang, Y. L. Chuang, C. C. Lin, J. Y. Haung, C. Y. Chou, J. K. Sheu, M. T. Tsai, and Y. J. Lee, “Enhancing UV-emissions through optical and electronic dual-function tuning of Ag nanoparticles hybridized with n-ZnO nanorods/p-GaN heterojunction light-emitting diodes,” Nanoscale 8(8), 4463–4474 (2016).
[Crossref] [PubMed]

Ursaki, V. V.

O. Lupan, T. Pauporté, B. Viana, I. M. Tiginyanu, V. V. Ursaki, and R. Cortès, “Epitaxial electrodeposition of ZnO nanowire arrays on p-GaN for efficient UV-light-emitting diode fabrication,” Appl. Mater. Interf. 2(7), 2083–2090 (2010).
[Crossref]

Van Nostrand, J. E.

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
[Crossref]

Viana, B.

O. Lupan, T. Pauporté, B. Viana, I. M. Tiginyanu, V. V. Ursaki, and R. Cortès, “Epitaxial electrodeposition of ZnO nanowire arrays on p-GaN for efficient UV-light-emitting diode fabrication,” Appl. Mater. Interf. 2(7), 2083–2090 (2010).
[Crossref]

O. Lupan, T. Pauporté, and B. Viana, “Low-voltage UV-electroluminescence from ZnO-nanowire Array/p-GaN light-emitting diodes,” Adv. Mater. 22(30), 3298–3302 (2010).
[Crossref] [PubMed]

Voss, T.

T. Voss, C. Bekeny, L. Wischmeier, H. Gafsi, S. Borner, W. Schade, A. C. Mofor, A. Bakin, and A. Waag, “Influence of exciton-phonon coupling on the energy position of the near-band-edge photoluminescence of ZnO nanowires,” Appl. Phys. Lett. 89(18), 182107 (2006).
[Crossref]

Waag, A.

T. Voss, C. Bekeny, L. Wischmeier, H. Gafsi, S. Borner, W. Schade, A. C. Mofor, A. Bakin, and A. Waag, “Influence of exciton-phonon coupling on the energy position of the near-band-edge photoluminescence of ZnO nanowires,” Appl. Phys. Lett. 89(18), 182107 (2006).
[Crossref]

Wang, D. K.

D. K. Wang, F. Wang, Y. P. Wang, Y. Fan, B. Zhao, and D. X. Zhao, “Interfacial emission adjustment in ZnO quantum dots/p-GaN heterojunction light-emitting diodes,” J. Phys. Chem. C 119(5), 2798–2803 (2015).
[Crossref]

Wang, F.

D. K. Wang, F. Wang, Y. P. Wang, Y. Fan, B. Zhao, and D. X. Zhao, “Interfacial emission adjustment in ZnO quantum dots/p-GaN heterojunction light-emitting diodes,” J. Phys. Chem. C 119(5), 2798–2803 (2015).
[Crossref]

Wang, G.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref] [PubMed]

Wang, H.

Z. F. Shi, B. Wu, X. P. Cai, X. C. Xia, S. Zhang, W. Yin, H. Wang, J. Wang, X. Dong, Y. T. Zhang, B. L. Zhang, and G. T. Du, “Photofacilitated controllable growth of ZnO films using photoassisted metal organic chemical vapor deposition,” Cryst. Growth Des. 12(9), 4417–4424 (2012).
[Crossref]

Wang, H. N.

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[Crossref]

H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[Crossref]

Wang, J.

Z. F. Shi, B. Wu, X. P. Cai, X. C. Xia, S. Zhang, W. Yin, H. Wang, J. Wang, X. Dong, Y. T. Zhang, B. L. Zhang, and G. T. Du, “Photofacilitated controllable growth of ZnO films using photoassisted metal organic chemical vapor deposition,” Cryst. Growth Des. 12(9), 4417–4424 (2012).
[Crossref]

Wang, J. X.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

Wang, Q.

X. Li, J. J. Qi, Q. Zhang, Q. Wang, F. Yi, Z. Z. Wang, and Y. Zhang, “Saturated blue-violet electroluminescence from single ZnO micro/nanowire and p-GaN film hybrid light-emitting diodes,” Appl. Phys. Lett. 102(22), 221103 (2013).
[Crossref]

Wang, S.

S. Wang, L. Lin, and Z. L. Wang, “Nanoscale triboelectric-effect-enabled energy conversion for sustainably powering portable electronics,” Nano Lett. 12(12), 6339–6346 (2012).
[Crossref] [PubMed]

Wang, S. P.

X. Yang, C. X. Shan, M. M. Jiang, J. M. Qin, G. C. Hu, S. P. Wang, H. A. Ma, X. P. Jia, and D. Z. Shen, “Intense electroluminescence from ZnO nanowires,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(20), 5292–5296 (2015).
[Crossref]

Wang, W.

Q. Yang, W. Wang, S. Xu, and Z. L. Wang, “Enhancing light emission of ZnO microwire-based diodes by piezo-phototronic effect,” Nano Lett. 11(9), 4012–4017 (2011).
[Crossref] [PubMed]

Wang, X. H.

X. Fang, J. H. Li, D. X. Zhao, D. Z. Shen, B. H. Li, and X. H. Wang, “Phosphorus-doped p-type ZnO nanorods and ZnO nanorod p-n homojunction LED fabricated by hydrothermal method,” J. Phys. Chem. C 113(50), 21208–21212 (2009).
[Crossref]

Wang, Y. P.

D. K. Wang, F. Wang, Y. P. Wang, Y. Fan, B. Zhao, and D. X. Zhao, “Interfacial emission adjustment in ZnO quantum dots/p-GaN heterojunction light-emitting diodes,” J. Phys. Chem. C 119(5), 2798–2803 (2015).
[Crossref]

Wang, Z. G.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

Wang, Z. L.

S. Wang, L. Lin, and Z. L. Wang, “Nanoscale triboelectric-effect-enabled energy conversion for sustainably powering portable electronics,” Nano Lett. 12(12), 6339–6346 (2012).
[Crossref] [PubMed]

Q. Yang, W. Wang, S. Xu, and Z. L. Wang, “Enhancing light emission of ZnO microwire-based diodes by piezo-phototronic effect,” Nano Lett. 11(9), 4012–4017 (2011).
[Crossref] [PubMed]

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

Z. L. Wang and J. Song, “Piezoelectric nanogenerators based on Zinc Oxide nanowire arrays,” Science 312(5771), 242–246 (2006).
[Crossref] [PubMed]

Wang, Z. Z.

X. Li, J. J. Qi, Q. Zhang, Q. Wang, F. Yi, Z. Z. Wang, and Y. Zhang, “Saturated blue-violet electroluminescence from single ZnO micro/nanowire and p-GaN film hybrid light-emitting diodes,” Appl. Phys. Lett. 102(22), 221103 (2013).
[Crossref]

Weber, E.

M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
[Crossref] [PubMed]

Weber, N.

P. Kröger, M. Ruth, N. Weber, and C. Meier, “Carrier localization in ZnO quantum wires,” Appl. Phys. Lett. 100(26), 263114 (2012).
[Crossref]

Wischmeier, L.

T. Voss, C. Bekeny, L. Wischmeier, H. Gafsi, S. Borner, W. Schade, A. C. Mofor, A. Bakin, and A. Waag, “Influence of exciton-phonon coupling on the energy position of the near-band-edge photoluminescence of ZnO nanowires,” Appl. Phys. Lett. 89(18), 182107 (2006).
[Crossref]

Wowchak, A. M.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

Wu, B.

Z. F. Shi, Y. T. Zhang, X. J. Cui, S. W. Zhuang, B. Wu, J. Y. Jiang, X. W. Chu, X. Dong, B. L. Zhang, and G. T. Du, “Epitaxial growth of vertically aligned ZnO nanowires for bidirectional direct-current driven light-emitting diodes applications,” CrystEngComm 17(1), 40–49 (2015).
[Crossref]

Z. F. Shi, B. Wu, X. P. Cai, X. C. Xia, S. Zhang, W. Yin, H. Wang, J. Wang, X. Dong, Y. T. Zhang, B. L. Zhang, and G. T. Du, “Photofacilitated controllable growth of ZnO films using photoassisted metal organic chemical vapor deposition,” Cryst. Growth Des. 12(9), 4417–4424 (2012).
[Crossref]

Wu, T.

R. Chen, Q. L. Ye, T. C. He, T. Wu, and H. D. Sun, “Uniaxial tensile strain and exciton−phonon coupling in bent ZnO nanowires,” Appl. Phys. Lett. 98(24), 241916 (2011).
[Crossref]

Wu, Y.

M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
[Crossref] [PubMed]

Xia, L.

Y. Yang, H. Yan, Z. Fu, B. Yang, L. Xia, Y. Xu, J. Zuo, and F. Li, “Photoluminescence investigation based on laser heating effect in ZnO-ordered nanostructures,” J. Phys. Chem. B 110(2), 846–852 (2006).
[Crossref] [PubMed]

Xia, X. C.

Z. F. Shi, B. Wu, X. P. Cai, X. C. Xia, S. Zhang, W. Yin, H. Wang, J. Wang, X. Dong, Y. T. Zhang, B. L. Zhang, and G. T. Du, “Photofacilitated controllable growth of ZnO films using photoassisted metal organic chemical vapor deposition,” Cryst. Growth Des. 12(9), 4417–4424 (2012).
[Crossref]

Xu, C.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Xu, S.

Q. Yang, W. Wang, S. Xu, and Z. L. Wang, “Enhancing light emission of ZnO microwire-based diodes by piezo-phototronic effect,” Nano Lett. 11(9), 4012–4017 (2011).
[Crossref] [PubMed]

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Xu, Y.

Y. Yang, H. Yan, Z. Fu, B. Yang, L. Xia, Y. Xu, J. Zuo, and F. Li, “Photoluminescence investigation based on laser heating effect in ZnO-ordered nanostructures,” J. Phys. Chem. B 110(2), 846–852 (2006).
[Crossref] [PubMed]

Yamada, T.

H. T. Ng, J. Han, T. Yamada, P. Nguyen, Y. P. Chen, and M. Meyyappan, “Single crystal nanowire vertical surround-gate field-effect transistor,” Nano Lett. 4(7), 1247–1252 (2004).
[Crossref]

Yan, B.

B. Yan, R. Chen, W. Zhou, J. Zhang, H. Sun, H. Gong, and T. Yu, “Localized suppression of longitudinal-optical-phonon-exciton coupling in bent ZnO nanowires,” Nanotechnology 21(44), 445706 (2010).
[Crossref] [PubMed]

Yan, H.

Y. Yang, H. Yan, Z. Fu, B. Yang, L. Xia, Y. Xu, J. Zuo, and F. Li, “Photoluminescence investigation based on laser heating effect in ZnO-ordered nanostructures,” J. Phys. Chem. B 110(2), 846–852 (2006).
[Crossref] [PubMed]

M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
[Crossref] [PubMed]

Yang, B.

Y. Yang, H. Yan, Z. Fu, B. Yang, L. Xia, Y. Xu, J. Zuo, and F. Li, “Photoluminescence investigation based on laser heating effect in ZnO-ordered nanostructures,” J. Phys. Chem. B 110(2), 846–852 (2006).
[Crossref] [PubMed]

Yang, P.

M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
[Crossref] [PubMed]

Yang, Q.

Q. Yang, W. Wang, S. Xu, and Z. L. Wang, “Enhancing light emission of ZnO microwire-based diodes by piezo-phototronic effect,” Nano Lett. 11(9), 4012–4017 (2011).
[Crossref] [PubMed]

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Yang, R.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

Yang, X.

X. Yang, C. X. Shan, M. M. Jiang, J. M. Qin, G. C. Hu, S. P. Wang, H. A. Ma, X. P. Jia, and D. Z. Shen, “Intense electroluminescence from ZnO nanowires,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(20), 5292–5296 (2015).
[Crossref]

Yang, Y.

Y. Yang, H. Yan, Z. Fu, B. Yang, L. Xia, Y. Xu, J. Zuo, and F. Li, “Photoluminescence investigation based on laser heating effect in ZnO-ordered nanostructures,” J. Phys. Chem. B 110(2), 846–852 (2006).
[Crossref] [PubMed]

Yang, Z. P.

Y. C. Yao, Z. P. Yang, J. M. Hwang, Y. L. Chuang, C. C. Lin, J. Y. Haung, C. Y. Chou, J. K. Sheu, M. T. Tsai, and Y. J. Lee, “Enhancing UV-emissions through optical and electronic dual-function tuning of Ag nanoparticles hybridized with n-ZnO nanorods/p-GaN heterojunction light-emitting diodes,” Nanoscale 8(8), 4463–4474 (2016).
[Crossref] [PubMed]

Yao, Y. C.

Y. C. Yao, Z. P. Yang, J. M. Hwang, Y. L. Chuang, C. C. Lin, J. Y. Haung, C. Y. Chou, J. K. Sheu, M. T. Tsai, and Y. J. Lee, “Enhancing UV-emissions through optical and electronic dual-function tuning of Ag nanoparticles hybridized with n-ZnO nanorods/p-GaN heterojunction light-emitting diodes,” Nanoscale 8(8), 4463–4474 (2016).
[Crossref] [PubMed]

Ye, Q. L.

R. Chen, Q. L. Ye, T. C. He, T. Wu, and H. D. Sun, “Uniaxial tensile strain and exciton−phonon coupling in bent ZnO nanowires,” Appl. Phys. Lett. 98(24), 241916 (2011).
[Crossref]

Ye, W.

Z. Qi, S. Li, S. Sun, W. Zhang, W. Ye, Y. Fang, Y. Tian, J. Dai, and C. Chen, “Large-scale growth of density-tunable aligned ZnO nanorods arrays on GaN QDs,” Nanotechnology 26(41), 415601 (2015).
[Crossref] [PubMed]

Yi, F.

X. Li, J. J. Qi, Q. Zhang, Q. Wang, F. Yi, Z. Z. Wang, and Y. Zhang, “Saturated blue-violet electroluminescence from single ZnO micro/nanowire and p-GaN film hybrid light-emitting diodes,” Appl. Phys. Lett. 102(22), 221103 (2013).
[Crossref]

Yi, G. C.

W. I. Park and G. C. Yi, “Electroluminescence in n-ZnO nanorod arrays vertically grown on p-GaN,” Adv. Mater. 16(1), 87–90 (2004).
[Crossref]

Yin, M.

Y. Gu, I. L. Kuskovsky, M. Yin, S. O’Brien, and G. F. Neumark, “Quantum confinement in ZnO nanorods,” Appl. Phys. Lett. 85(17), 3833 (2004).
[Crossref]

Yin, W.

Z. F. Shi, B. Wu, X. P. Cai, X. C. Xia, S. Zhang, W. Yin, H. Wang, J. Wang, X. Dong, Y. T. Zhang, B. L. Zhang, and G. T. Du, “Photofacilitated controllable growth of ZnO films using photoassisted metal organic chemical vapor deposition,” Cryst. Growth Des. 12(9), 4417–4424 (2012).
[Crossref]

Yin, Z. G.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

Yu, S. F.

E. S. P. Leong and S. F. Yu, “UV random lasing action in p-SiC(4H)/i-ZnO−SiO2 nanocomposite/n-ZnO:Al heterojunction diodes,” Adv. Mater. 18(13), 1685–1688 (2006).
[Crossref]

Yu, T.

B. Yan, R. Chen, W. Zhou, J. Zhang, H. Sun, H. Gong, and T. Yu, “Localized suppression of longitudinal-optical-phonon-exciton coupling in bent ZnO nanowires,” Nanotechnology 21(44), 445706 (2010).
[Crossref] [PubMed]

Zhang, B. L.

Z. F. Shi, Y. T. Zhang, X. J. Cui, S. W. Zhuang, B. Wu, J. Y. Jiang, X. W. Chu, X. Dong, B. L. Zhang, and G. T. Du, “Epitaxial growth of vertically aligned ZnO nanowires for bidirectional direct-current driven light-emitting diodes applications,” CrystEngComm 17(1), 40–49 (2015).
[Crossref]

Z. F. Shi, B. Wu, X. P. Cai, X. C. Xia, S. Zhang, W. Yin, H. Wang, J. Wang, X. Dong, Y. T. Zhang, B. L. Zhang, and G. T. Du, “Photofacilitated controllable growth of ZnO films using photoassisted metal organic chemical vapor deposition,” Cryst. Growth Des. 12(9), 4417–4424 (2012).
[Crossref]

Zhang, J.

B. Yan, R. Chen, W. Zhou, J. Zhang, H. Sun, H. Gong, and T. Yu, “Localized suppression of longitudinal-optical-phonon-exciton coupling in bent ZnO nanowires,” Nanotechnology 21(44), 445706 (2010).
[Crossref] [PubMed]

Zhang, Q.

X. Li, J. J. Qi, Q. Zhang, Q. Wang, F. Yi, Z. Z. Wang, and Y. Zhang, “Saturated blue-violet electroluminescence from single ZnO micro/nanowire and p-GaN film hybrid light-emitting diodes,” Appl. Phys. Lett. 102(22), 221103 (2013).
[Crossref]

Zhang, S.

Z. F. Shi, B. Wu, X. P. Cai, X. C. Xia, S. Zhang, W. Yin, H. Wang, J. Wang, X. Dong, Y. T. Zhang, B. L. Zhang, and G. T. Du, “Photofacilitated controllable growth of ZnO films using photoassisted metal organic chemical vapor deposition,” Cryst. Growth Des. 12(9), 4417–4424 (2012).
[Crossref]

Zhang, S. G.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

Zhang, W.

Z. Qi, S. Li, S. Sun, W. Zhang, W. Ye, Y. Fang, Y. Tian, J. Dai, and C. Chen, “Large-scale growth of density-tunable aligned ZnO nanorods arrays on GaN QDs,” Nanotechnology 26(41), 415601 (2015).
[Crossref] [PubMed]

Zhang, X. M.

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

Zhang, X. W.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

Zhang, Y.

X. Li, J. J. Qi, Q. Zhang, Q. Wang, F. Yi, Z. Z. Wang, and Y. Zhang, “Saturated blue-violet electroluminescence from single ZnO micro/nanowire and p-GaN film hybrid light-emitting diodes,” Appl. Phys. Lett. 102(22), 221103 (2013).
[Crossref]

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

Zhang, Y. P.

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[Crossref]

Zhang, Y. T.

Z. F. Shi, Y. T. Zhang, X. J. Cui, S. W. Zhuang, B. Wu, J. Y. Jiang, X. W. Chu, X. Dong, B. L. Zhang, and G. T. Du, “Epitaxial growth of vertically aligned ZnO nanowires for bidirectional direct-current driven light-emitting diodes applications,” CrystEngComm 17(1), 40–49 (2015).
[Crossref]

Z. F. Shi, B. Wu, X. P. Cai, X. C. Xia, S. Zhang, W. Yin, H. Wang, J. Wang, X. Dong, Y. T. Zhang, B. L. Zhang, and G. T. Du, “Photofacilitated controllable growth of ZnO films using photoassisted metal organic chemical vapor deposition,” Cryst. Growth Des. 12(9), 4417–4424 (2012).
[Crossref]

Zhao, B.

D. K. Wang, F. Wang, Y. P. Wang, Y. Fan, B. Zhao, and D. X. Zhao, “Interfacial emission adjustment in ZnO quantum dots/p-GaN heterojunction light-emitting diodes,” J. Phys. Chem. C 119(5), 2798–2803 (2015).
[Crossref]

Zhao, D. X.

D. K. Wang, F. Wang, Y. P. Wang, Y. Fan, B. Zhao, and D. X. Zhao, “Interfacial emission adjustment in ZnO quantum dots/p-GaN heterojunction light-emitting diodes,” J. Phys. Chem. C 119(5), 2798–2803 (2015).
[Crossref]

X. Fang, J. H. Li, D. X. Zhao, D. Z. Shen, B. H. Li, and X. H. Wang, “Phosphorus-doped p-type ZnO nanorods and ZnO nanorod p-n homojunction LED fabricated by hydrothermal method,” J. Phys. Chem. C 113(50), 21208–21212 (2009).
[Crossref]

Zhao, J.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref] [PubMed]

Zhao, X. Z.

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[Crossref]

H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

Zhou, W.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref] [PubMed]

B. Yan, R. Chen, W. Zhou, J. Zhang, H. Sun, H. Gong, and T. Yu, “Localized suppression of longitudinal-optical-phonon-exciton coupling in bent ZnO nanowires,” Nanotechnology 21(44), 445706 (2010).
[Crossref] [PubMed]

Zhu, C. C.

Y. N. He, S. G. Shang, W. Y. Cui, X. Li, C. C. Zhu, and X. Hou, “Investigation of luminescence properties of ZnO nanowires at room temperature,” Microelectronics J. 40(3), 517–519 (2009).
[Crossref]

Zhuang, S. W.

Z. F. Shi, Y. T. Zhang, X. J. Cui, S. W. Zhuang, B. Wu, J. Y. Jiang, X. W. Chu, X. Dong, B. L. Zhang, and G. T. Du, “Epitaxial growth of vertically aligned ZnO nanowires for bidirectional direct-current driven light-emitting diodes applications,” CrystEngComm 17(1), 40–49 (2015).
[Crossref]

Zuo, J.

Y. Yang, H. Yan, Z. Fu, B. Yang, L. Xia, Y. Xu, J. Zuo, and F. Li, “Photoluminescence investigation based on laser heating effect in ZnO-ordered nanostructures,” J. Phys. Chem. B 110(2), 846–852 (2006).
[Crossref] [PubMed]

Adv. Mater. (5)

E. S. P. Leong and S. F. Yu, “UV random lasing action in p-SiC(4H)/i-ZnO−SiO2 nanocomposite/n-ZnO:Al heterojunction diodes,” Adv. Mater. 18(13), 1685–1688 (2006).
[Crossref]

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref] [PubMed]

W. I. Park and G. C. Yi, “Electroluminescence in n-ZnO nanorod arrays vertically grown on p-GaN,” Adv. Mater. 16(1), 87–90 (2004).
[Crossref]

O. Lupan, T. Pauporté, and B. Viana, “Low-voltage UV-electroluminescence from ZnO-nanowire Array/p-GaN light-emitting diodes,” Adv. Mater. 22(30), 3298–3302 (2010).
[Crossref] [PubMed]

Appl. Mater. Interf. (1)

O. Lupan, T. Pauporté, B. Viana, I. M. Tiginyanu, V. V. Ursaki, and R. Cortès, “Epitaxial electrodeposition of ZnO nanowire arrays on p-GaN for efficient UV-light-emitting diode fabrication,” Appl. Mater. Interf. 2(7), 2083–2090 (2010).
[Crossref]

Appl. Phys. Lett. (10)

Y. Gu, I. L. Kuskovsky, M. Yin, S. O’Brien, and G. F. Neumark, “Quantum confinement in ZnO nanorods,” Appl. Phys. Lett. 85(17), 3833 (2004).
[Crossref]

P. Kröger, M. Ruth, N. Weber, and C. Meier, “Carrier localization in ZnO quantum wires,” Appl. Phys. Lett. 100(26), 263114 (2012).
[Crossref]

T. Voss, C. Bekeny, L. Wischmeier, H. Gafsi, S. Borner, W. Schade, A. C. Mofor, A. Bakin, and A. Waag, “Influence of exciton-phonon coupling on the energy position of the near-band-edge photoluminescence of ZnO nanowires,” Appl. Phys. Lett. 89(18), 182107 (2006).
[Crossref]

U. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, “Nature of the 2.8 eV photoluminescence band in Mg doped GaN,” Appl. Phys. Lett. 72(11), 1326 (1998).
[Crossref]

X. Li, J. J. Qi, Q. Zhang, Q. Wang, F. Yi, Z. Z. Wang, and Y. Zhang, “Saturated blue-violet electroluminescence from single ZnO micro/nanowire and p-GaN film hybrid light-emitting diodes,” Appl. Phys. Lett. 102(22), 221103 (2013).
[Crossref]

H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[Crossref]

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
[Crossref]

K. K. Kim, S. D. Lee, H. S. Kim, J. C. Park, S. N. Lee, Y. S. Park, S. J. Park, and S. W. Kim, “Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution,” Appl. Phys. Lett. 94(7), 071118 (2009).
[Crossref]

R. Chen, Q. L. Ye, T. C. He, T. Wu, and H. D. Sun, “Uniaxial tensile strain and exciton−phonon coupling in bent ZnO nanowires,” Appl. Phys. Lett. 98(24), 241916 (2011).
[Crossref]

H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]

Cryst. Growth Des. (1)

Z. F. Shi, B. Wu, X. P. Cai, X. C. Xia, S. Zhang, W. Yin, H. Wang, J. Wang, X. Dong, Y. T. Zhang, B. L. Zhang, and G. T. Du, “Photofacilitated controllable growth of ZnO films using photoassisted metal organic chemical vapor deposition,” Cryst. Growth Des. 12(9), 4417–4424 (2012).
[Crossref]

CrystEngComm (1)

Z. F. Shi, Y. T. Zhang, X. J. Cui, S. W. Zhuang, B. Wu, J. Y. Jiang, X. W. Chu, X. Dong, B. L. Zhang, and G. T. Du, “Epitaxial growth of vertically aligned ZnO nanowires for bidirectional direct-current driven light-emitting diodes applications,” CrystEngComm 17(1), 40–49 (2015).
[Crossref]

J. Appl. Phys. (1)

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer,” J. Appl. Phys. 109(9), 093708 (2011).
[Crossref]

J. Lumin. (1)

S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[Crossref]

J. Mater. Chem. C Mater. Opt. Electron. Devices (1)

X. Yang, C. X. Shan, M. M. Jiang, J. M. Qin, G. C. Hu, S. P. Wang, H. A. Ma, X. P. Jia, and D. Z. Shen, “Intense electroluminescence from ZnO nanowires,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(20), 5292–5296 (2015).
[Crossref]

J. Phys. Chem. B (1)

Y. Yang, H. Yan, Z. Fu, B. Yang, L. Xia, Y. Xu, J. Zuo, and F. Li, “Photoluminescence investigation based on laser heating effect in ZnO-ordered nanostructures,” J. Phys. Chem. B 110(2), 846–852 (2006).
[Crossref] [PubMed]

J. Phys. Chem. C (2)

D. K. Wang, F. Wang, Y. P. Wang, Y. Fan, B. Zhao, and D. X. Zhao, “Interfacial emission adjustment in ZnO quantum dots/p-GaN heterojunction light-emitting diodes,” J. Phys. Chem. C 119(5), 2798–2803 (2015).
[Crossref]

X. Fang, J. H. Li, D. X. Zhao, D. Z. Shen, B. H. Li, and X. H. Wang, “Phosphorus-doped p-type ZnO nanorods and ZnO nanorod p-n homojunction LED fabricated by hydrothermal method,” J. Phys. Chem. C 113(50), 21208–21212 (2009).
[Crossref]

Microelectronics J. (1)

Y. N. He, S. G. Shang, W. Y. Cui, X. Li, C. C. Zhu, and X. Hou, “Investigation of luminescence properties of ZnO nanowires at room temperature,” Microelectronics J. 40(3), 517–519 (2009).
[Crossref]

Nano Lett. (3)

Q. Yang, W. Wang, S. Xu, and Z. L. Wang, “Enhancing light emission of ZnO microwire-based diodes by piezo-phototronic effect,” Nano Lett. 11(9), 4012–4017 (2011).
[Crossref] [PubMed]

H. T. Ng, J. Han, T. Yamada, P. Nguyen, Y. P. Chen, and M. Meyyappan, “Single crystal nanowire vertical surround-gate field-effect transistor,” Nano Lett. 4(7), 1247–1252 (2004).
[Crossref]

S. Wang, L. Lin, and Z. L. Wang, “Nanoscale triboelectric-effect-enabled energy conversion for sustainably powering portable electronics,” Nano Lett. 12(12), 6339–6346 (2012).
[Crossref] [PubMed]

Nanoscale (1)

Y. C. Yao, Z. P. Yang, J. M. Hwang, Y. L. Chuang, C. C. Lin, J. Y. Haung, C. Y. Chou, J. K. Sheu, M. T. Tsai, and Y. J. Lee, “Enhancing UV-emissions through optical and electronic dual-function tuning of Ag nanoparticles hybridized with n-ZnO nanorods/p-GaN heterojunction light-emitting diodes,” Nanoscale 8(8), 4463–4474 (2016).
[Crossref] [PubMed]

Nanotechnology (2)

B. Yan, R. Chen, W. Zhou, J. Zhang, H. Sun, H. Gong, and T. Yu, “Localized suppression of longitudinal-optical-phonon-exciton coupling in bent ZnO nanowires,” Nanotechnology 21(44), 445706 (2010).
[Crossref] [PubMed]

Z. Qi, S. Li, S. Sun, W. Zhang, W. Ye, Y. Fang, Y. Tian, J. Dai, and C. Chen, “Large-scale growth of density-tunable aligned ZnO nanorods arrays on GaN QDs,” Nanotechnology 26(41), 415601 (2015).
[Crossref] [PubMed]

Nat. Nanotechnol. (1)

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref] [PubMed]

Phys. Rev. B (1)

A. Satake, Y. Masumoto, T. Miyajima, T. Asatsuma, and M. Ikeda, “Two-dimensional exciton dynamics and gain formation processes in InxGa1-xN multiple quantum wells,” Phys. Rev. B 60(24), 16660–16666 (1999).
[Crossref]

Science (2)

Z. L. Wang and J. Song, “Piezoelectric nanogenerators based on Zinc Oxide nanowire arrays,” Science 312(5771), 242–246 (2006).
[Crossref] [PubMed]

M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
[Crossref] [PubMed]

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (6)

Fig. 1
Fig. 1 Schematic diagrams of the fabricated n-GaN/i-ZnO/p-GaN double heterojunction diodes: (a) device A, (b) device B.
Fig. 2
Fig. 2 Cross-section SEM images of ZnO NPs (a) and ZnO NRs (b). The inset of (a) shows the enlarged top-view image of ZnO NPs. (c) XRD patterns of ZnO NPs grown on n-GaN/sapphire substrates. The inset shows the (0002) ω-rocking curve of ZnO NPs. (d) PL spectra of ZnO NPs and NRs.
Fig. 3
Fig. 3 EL spectra of device A under different forward biases. The inset shows the driving current and emission intensity as a function of the applied voltage.
Fig. 4
Fig. 4 (a) Gaussian deconvolution of a representative EL spectrum measured at 12 V. The inset shows the corresponding light emission image. (b) Room temperature PL spectrum of p-GaN films. (c) Schematic diagram of nanoscale ZnO NP/p-GaN heterojunction.
Fig. 5
Fig. 5 (a) Gaussian deconvolution for all EL spectra of device A at different forward biases. (b) Intensity ratio of L1/L2 at different forward biases. (c) Peak position shift as a function of the operating bias for L1, L2, L3, and L4 emissions. (d) Integrated emission intensity as a function of the operating voltage.
Fig. 6
Fig. 6 (a) EL spectra of device B under different forward biases. The inset is the I-V curve of device B. (b) Gaussian fitting results of device B under 20 V bias.

Equations (1)

Equations on this page are rendered with MathJax. Learn more.

hν= E g + 2 π 2 2 m r * D 2 + e 2 2π ε 0 ε r D

Metrics