Abstract

III-nitride LEDs are fundamental components for visible-light communication (VLC). However, the modulation bandwidth is inherently limited by the relatively long carrier lifetime. In this letter, we present the 405 nm emitting superluminescent diode (SLD) with tilted facet design on semipolar GaN substrate, showing a broad emission of ~9 nm at 20 mW optical power. Owing to the fast recombination (τe<0.35 ns) through the amplified spontaneous emission, the SLD exhibits a significantly large 3-dB bandwidth of 807 MHz. A data rate of 1.3 Gbps with a bit-error rate of 2.9 × 10−3 was obtained using on-off keying modulation scheme, suggesting the SLD being a high-speed transmitter for VLC applications.

© 2016 Optical Society of America

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  1. M. H. Crawford, “LEDs for solid-state lighting: performance challenges and recent advances,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1028–1040 (2009).
    [Crossref]
  2. S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
    [Crossref]
  3. Y. Zhao, Q. M. Yan, D. Feezell, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical polarization characteristics of semipolar (303¯1) and (303¯1¯) InGaN/GaN light-emitting diodes, ” Opt. Express 21(S1), A53–A59 (2013).
    [Crossref]
  4. C. Shen, T. K. Ng, and B. S. Ooi, “Enabling area-selective potential-energy engineering in InGaN/GaN quantum wells by post-growth intermixing,” Opt. Express 23(6), 7991–7998 (2015).
    [Crossref]
  5. H. Burchardt, N. Serafimovski, D. Tsonev, S. Videv, and H. Haas, “VLC: beyond point-to-point communication,” IEEE Commun. Mag. 52(7), 98–105 (2014).
    [Crossref]
  6. C. L. Liao, C. L. Ho, Y. F. Chang, C. H. Wu, and M. C. Wu, “High-speed light-emitting diodes emitting at 500 nm with 463-mhz modulation bandwidth,” IEEE Electron Device Lett. 35(5), 563–565 (2014).
    [Crossref]
  7. J. M. M. Santos, S. Rajbhandari, D. Tsonev, H. Chun, B. Guilhabert, A. B. Krysa, A. E. Kelly, H. Haas, D. C. O’Brien, N. Laurand, and M. D. Dawson, “Visible light communication using InGaN optical sources with AlInGaP nanomembrane down-converters,” Opt. Express 24(9), 10020–10029 (2016).
    [Crossref]
  8. H. Le Minh, D. O’Brien, G. Faulkner, L. B. Zeng, K. Lee, D. Jung, Y. Oh, and E. T. Won, “100-Mb/s NRZ Visible Light Communications Using a Postequalized White LED,” IEEE Photonics Technol. Lett. 21(15), 1063–1065 (2009).
    [Crossref]
  9. C. L. Liao, Y. F. Chang, C. L. Ho, and M. C. Wu, “High-speed GaN-based blue light-emitting diodes with gallium-doped ZnO current spreading layer,” IEEE Electron Device Lett. 34(5), 611–613 (2013).
    [Crossref]
  10. C. Lee, C. Zhang, M. Cantore, R. M. Farrell, S. H. Oh, T. Margalith, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, “4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication,” Opt. Express 23(12), 16232–16237 (2015).
    [Crossref]
  11. C. Lee, C. Shen, H. M. Oubei, M. Cantore, B. Janjua, T. K. Ng, R. M. Farrell, M. M. El-Desouki, J. S. Speck, S. Nakamura, B. S. Ooi, and S. P. DenBaars, “2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system,” Opt. Express 23(23), 29779–29787 (2015).
    [Crossref]
  12. J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Fischer, D. D. Koleske, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek., “Toward smart and ultra-efficient solid-state lighting,” Adv. Opt. Mater. 2(9), 809–836 (2014).
    [Crossref]
  13. N. Abu-Ageel and D. Aslam, “Laser-driven visible solid-state light source for etendue-limited applications,” J. Disp. Technol. 10(8), 700–703 (2014).
    [Crossref]
  14. M. Rossetti, J. Dorsaz, R. Rezzonico, M. Duelk, C. Velez, E. Feltin, A. Castiglia, G. Cosendey, J. F. Carlin, and N. Grandjean, “High power blue-violet superluminescent light emitting diodes with InGaN quantum wells,” Appl. Phys. Express 3(6), 061002 (2010).
    [Crossref]
  15. E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J. F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95(8), 081107 (2009).
    [Crossref]
  16. C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-desouki, and B. S. Ooi, “High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications, ” Opt. Lett. 41(11), 2608–2611 (2016).
    [Crossref]
  17. M. Z. M. Khan, H. H. Alhashim, T. K. Ng, and B. S. Ooi, “High-power and high-efficiency 1.3-µm superluminescent diode with flat-top and ultrawide emission bandwidth,” IEEE Photonics J. 7, 1600308 (2015).
    [Crossref]
  18. D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar(202¯1¯), ” J. Disp. Technol. 9(4), 190–198 (2013).
    [Crossref]
  19. Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar(202¯1¯), ” Appl. Phys. Express 6(6), 062102 (2013).
    [Crossref]
  20. C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power, low-efficiency-droop semipolar(202¯1¯), ” Appl. Phys. Express 5(6), 062103 (2012).
    [Crossref]
  21. Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
    [Crossref]
  22. Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar(202¯1¯), ” Appl. Phys. Express 4(8), 082104 (2011).
    [Crossref]
  23. W. J. Liu, X. L. Hu, L. Y. Ying, S. Q. Chen, J. Y. Zhang, H. Akiyama, Z. P. Cai, and B. P. Zhang, “On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers,” Sci. Rep. 5, 9600 (2015).
    [Crossref]
  24. P. Govind, Agrawal, Fiber-Optic Communication Systems, 4th ed. (Wiley, 2010), Chap. 3.
  25. R. P. Green, J. J. D. McKendry, D. Massoubre, E. D. Gu, M. D. Dawson, and A. E. Kelly, “Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes,” Appl. Phys. Lett. 102(9), 091103 (2013).
    [Crossref]

2016 (2)

2015 (5)

2014 (4)

H. Burchardt, N. Serafimovski, D. Tsonev, S. Videv, and H. Haas, “VLC: beyond point-to-point communication,” IEEE Commun. Mag. 52(7), 98–105 (2014).
[Crossref]

C. L. Liao, C. L. Ho, Y. F. Chang, C. H. Wu, and M. C. Wu, “High-speed light-emitting diodes emitting at 500 nm with 463-mhz modulation bandwidth,” IEEE Electron Device Lett. 35(5), 563–565 (2014).
[Crossref]

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Fischer, D. D. Koleske, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek., “Toward smart and ultra-efficient solid-state lighting,” Adv. Opt. Mater. 2(9), 809–836 (2014).
[Crossref]

N. Abu-Ageel and D. Aslam, “Laser-driven visible solid-state light source for etendue-limited applications,” J. Disp. Technol. 10(8), 700–703 (2014).
[Crossref]

2013 (5)

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar(202¯1¯), ” J. Disp. Technol. 9(4), 190–198 (2013).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar(202¯1¯), ” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

Y. Zhao, Q. M. Yan, D. Feezell, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical polarization characteristics of semipolar (303¯1) and (303¯1¯) InGaN/GaN light-emitting diodes, ” Opt. Express 21(S1), A53–A59 (2013).
[Crossref]

C. L. Liao, Y. F. Chang, C. L. Ho, and M. C. Wu, “High-speed GaN-based blue light-emitting diodes with gallium-doped ZnO current spreading layer,” IEEE Electron Device Lett. 34(5), 611–613 (2013).
[Crossref]

R. P. Green, J. J. D. McKendry, D. Massoubre, E. D. Gu, M. D. Dawson, and A. E. Kelly, “Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes,” Appl. Phys. Lett. 102(9), 091103 (2013).
[Crossref]

2012 (1)

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power, low-efficiency-droop semipolar(202¯1¯), ” Appl. Phys. Express 5(6), 062103 (2012).
[Crossref]

2011 (2)

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar(202¯1¯), ” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

2010 (1)

M. Rossetti, J. Dorsaz, R. Rezzonico, M. Duelk, C. Velez, E. Feltin, A. Castiglia, G. Cosendey, J. F. Carlin, and N. Grandjean, “High power blue-violet superluminescent light emitting diodes with InGaN quantum wells,” Appl. Phys. Express 3(6), 061002 (2010).
[Crossref]

2009 (4)

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J. F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95(8), 081107 (2009).
[Crossref]

H. Le Minh, D. O’Brien, G. Faulkner, L. B. Zeng, K. Lee, D. Jung, Y. Oh, and E. T. Won, “100-Mb/s NRZ Visible Light Communications Using a Postequalized White LED,” IEEE Photonics Technol. Lett. 21(15), 1063–1065 (2009).
[Crossref]

M. H. Crawford, “LEDs for solid-state lighting: performance challenges and recent advances,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1028–1040 (2009).
[Crossref]

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
[Crossref]

Abu-Ageel, N.

N. Abu-Ageel and D. Aslam, “Laser-driven visible solid-state light source for etendue-limited applications,” J. Disp. Technol. 10(8), 700–703 (2014).
[Crossref]

Akiyama, H.

W. J. Liu, X. L. Hu, L. Y. Ying, S. Q. Chen, J. Y. Zhang, H. Akiyama, Z. P. Cai, and B. P. Zhang, “On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers,” Sci. Rep. 5, 9600 (2015).
[Crossref]

Alhashim, H. H.

M. Z. M. Khan, H. H. Alhashim, T. K. Ng, and B. S. Ooi, “High-power and high-efficiency 1.3-µm superluminescent diode with flat-top and ultrawide emission bandwidth,” IEEE Photonics J. 7, 1600308 (2015).
[Crossref]

Alyamani, A. Y.

Aslam, D.

N. Abu-Ageel and D. Aslam, “Laser-driven visible solid-state light source for etendue-limited applications,” J. Disp. Technol. 10(8), 700–703 (2014).
[Crossref]

Bowers, J. E.

Burchardt, H.

H. Burchardt, N. Serafimovski, D. Tsonev, S. Videv, and H. Haas, “VLC: beyond point-to-point communication,” IEEE Commun. Mag. 52(7), 98–105 (2014).
[Crossref]

Cai, Z. P.

W. J. Liu, X. L. Hu, L. Y. Ying, S. Q. Chen, J. Y. Zhang, H. Akiyama, Z. P. Cai, and B. P. Zhang, “On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers,” Sci. Rep. 5, 9600 (2015).
[Crossref]

Cantore, M.

Carlin, J. F.

M. Rossetti, J. Dorsaz, R. Rezzonico, M. Duelk, C. Velez, E. Feltin, A. Castiglia, G. Cosendey, J. F. Carlin, and N. Grandjean, “High power blue-violet superluminescent light emitting diodes with InGaN quantum wells,” Appl. Phys. Express 3(6), 061002 (2010).
[Crossref]

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J. F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95(8), 081107 (2009).
[Crossref]

Castiglia, A.

M. Rossetti, J. Dorsaz, R. Rezzonico, M. Duelk, C. Velez, E. Feltin, A. Castiglia, G. Cosendey, J. F. Carlin, and N. Grandjean, “High power blue-violet superluminescent light emitting diodes with InGaN quantum wells,” Appl. Phys. Express 3(6), 061002 (2010).
[Crossref]

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J. F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95(8), 081107 (2009).
[Crossref]

Chang, Y. F.

C. L. Liao, C. L. Ho, Y. F. Chang, C. H. Wu, and M. C. Wu, “High-speed light-emitting diodes emitting at 500 nm with 463-mhz modulation bandwidth,” IEEE Electron Device Lett. 35(5), 563–565 (2014).
[Crossref]

C. L. Liao, Y. F. Chang, C. L. Ho, and M. C. Wu, “High-speed GaN-based blue light-emitting diodes with gallium-doped ZnO current spreading layer,” IEEE Electron Device Lett. 34(5), 611–613 (2013).
[Crossref]

Chen, S. Q.

W. J. Liu, X. L. Hu, L. Y. Ying, S. Q. Chen, J. Y. Zhang, H. Akiyama, Z. P. Cai, and B. P. Zhang, “On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers,” Sci. Rep. 5, 9600 (2015).
[Crossref]

Chun, H.

Chung, R. B.

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Coltrin, M. E.

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Fischer, D. D. Koleske, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek., “Toward smart and ultra-efficient solid-state lighting,” Adv. Opt. Mater. 2(9), 809–836 (2014).
[Crossref]

Cosendey, G.

M. Rossetti, J. Dorsaz, R. Rezzonico, M. Duelk, C. Velez, E. Feltin, A. Castiglia, G. Cosendey, J. F. Carlin, and N. Grandjean, “High power blue-violet superluminescent light emitting diodes with InGaN quantum wells,” Appl. Phys. Express 3(6), 061002 (2010).
[Crossref]

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J. F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95(8), 081107 (2009).
[Crossref]

Crawford, M. H.

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Fischer, D. D. Koleske, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek., “Toward smart and ultra-efficient solid-state lighting,” Adv. Opt. Mater. 2(9), 809–836 (2014).
[Crossref]

M. H. Crawford, “LEDs for solid-state lighting: performance challenges and recent advances,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1028–1040 (2009).
[Crossref]

Dawson, M. D.

J. M. M. Santos, S. Rajbhandari, D. Tsonev, H. Chun, B. Guilhabert, A. B. Krysa, A. E. Kelly, H. Haas, D. C. O’Brien, N. Laurand, and M. D. Dawson, “Visible light communication using InGaN optical sources with AlInGaP nanomembrane down-converters,” Opt. Express 24(9), 10020–10029 (2016).
[Crossref]

R. P. Green, J. J. D. McKendry, D. Massoubre, E. D. Gu, M. D. Dawson, and A. E. Kelly, “Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes,” Appl. Phys. Lett. 102(9), 091103 (2013).
[Crossref]

DenBaars, S. P.

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-desouki, and B. S. Ooi, “High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications, ” Opt. Lett. 41(11), 2608–2611 (2016).
[Crossref]

C. Lee, C. Shen, H. M. Oubei, M. Cantore, B. Janjua, T. K. Ng, R. M. Farrell, M. M. El-Desouki, J. S. Speck, S. Nakamura, B. S. Ooi, and S. P. DenBaars, “2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system,” Opt. Express 23(23), 29779–29787 (2015).
[Crossref]

C. Lee, C. Zhang, M. Cantore, R. M. Farrell, S. H. Oh, T. Margalith, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, “4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication,” Opt. Express 23(12), 16232–16237 (2015).
[Crossref]

Y. Zhao, Q. M. Yan, D. Feezell, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical polarization characteristics of semipolar (303¯1) and (303¯1¯) InGaN/GaN light-emitting diodes, ” Opt. Express 21(S1), A53–A59 (2013).
[Crossref]

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar(202¯1¯), ” J. Disp. Technol. 9(4), 190–198 (2013).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar(202¯1¯), ” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power, low-efficiency-droop semipolar(202¯1¯), ” Appl. Phys. Express 5(6), 062103 (2012).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar(202¯1¯), ” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
[Crossref]

Dorsaz, J.

M. Rossetti, J. Dorsaz, R. Rezzonico, M. Duelk, C. Velez, E. Feltin, A. Castiglia, G. Cosendey, J. F. Carlin, and N. Grandjean, “High power blue-violet superluminescent light emitting diodes with InGaN quantum wells,” Appl. Phys. Express 3(6), 061002 (2010).
[Crossref]

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J. F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95(8), 081107 (2009).
[Crossref]

Duelk, M.

M. Rossetti, J. Dorsaz, R. Rezzonico, M. Duelk, C. Velez, E. Feltin, A. Castiglia, G. Cosendey, J. F. Carlin, and N. Grandjean, “High power blue-violet superluminescent light emitting diodes with InGaN quantum wells,” Appl. Phys. Express 3(6), 061002 (2010).
[Crossref]

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J. F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95(8), 081107 (2009).
[Crossref]

El-desouki, M. M.

Farrell, R. M.

Faulkner, G.

H. Le Minh, D. O’Brien, G. Faulkner, L. B. Zeng, K. Lee, D. Jung, Y. Oh, and E. T. Won, “100-Mb/s NRZ Visible Light Communications Using a Postequalized White LED,” IEEE Photonics Technol. Lett. 21(15), 1063–1065 (2009).
[Crossref]

Feezell, D.

Y. Zhao, Q. M. Yan, D. Feezell, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical polarization characteristics of semipolar (303¯1) and (303¯1¯) InGaN/GaN light-emitting diodes, ” Opt. Express 21(S1), A53–A59 (2013).
[Crossref]

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power, low-efficiency-droop semipolar(202¯1¯), ” Appl. Phys. Express 5(6), 062103 (2012).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar(202¯1¯), ” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

Feezell, D. F.

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar(202¯1¯), ” J. Disp. Technol. 9(4), 190–198 (2013).
[Crossref]

Feltin, E.

M. Rossetti, J. Dorsaz, R. Rezzonico, M. Duelk, C. Velez, E. Feltin, A. Castiglia, G. Cosendey, J. F. Carlin, and N. Grandjean, “High power blue-violet superluminescent light emitting diodes with InGaN quantum wells,” Appl. Phys. Express 3(6), 061002 (2010).
[Crossref]

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J. F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95(8), 081107 (2009).
[Crossref]

Fischer, A. J.

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Fischer, D. D. Koleske, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek., “Toward smart and ultra-efficient solid-state lighting,” Adv. Opt. Mater. 2(9), 809–836 (2014).
[Crossref]

Fujito, K.

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar(202¯1¯), ” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

Y. Zhao, Q. M. Yan, D. Feezell, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical polarization characteristics of semipolar (303¯1) and (303¯1¯) InGaN/GaN light-emitting diodes, ” Opt. Express 21(S1), A53–A59 (2013).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar(202¯1¯), ” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

Grandjean, N.

M. Rossetti, J. Dorsaz, R. Rezzonico, M. Duelk, C. Velez, E. Feltin, A. Castiglia, G. Cosendey, J. F. Carlin, and N. Grandjean, “High power blue-violet superluminescent light emitting diodes with InGaN quantum wells,” Appl. Phys. Express 3(6), 061002 (2010).
[Crossref]

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J. F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95(8), 081107 (2009).
[Crossref]

Green, R. P.

R. P. Green, J. J. D. McKendry, D. Massoubre, E. D. Gu, M. D. Dawson, and A. E. Kelly, “Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes,” Appl. Phys. Lett. 102(9), 091103 (2013).
[Crossref]

Gu, E. D.

R. P. Green, J. J. D. McKendry, D. Massoubre, E. D. Gu, M. D. Dawson, and A. E. Kelly, “Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes,” Appl. Phys. Lett. 102(9), 091103 (2013).
[Crossref]

Guilhabert, B.

Haas, H.

Ho, C. L.

C. L. Liao, C. L. Ho, Y. F. Chang, C. H. Wu, and M. C. Wu, “High-speed light-emitting diodes emitting at 500 nm with 463-mhz modulation bandwidth,” IEEE Electron Device Lett. 35(5), 563–565 (2014).
[Crossref]

C. L. Liao, Y. F. Chang, C. L. Ho, and M. C. Wu, “High-speed GaN-based blue light-emitting diodes with gallium-doped ZnO current spreading layer,” IEEE Electron Device Lett. 34(5), 611–613 (2013).
[Crossref]

Hu, X. L.

W. J. Liu, X. L. Hu, L. Y. Ying, S. Q. Chen, J. Y. Zhang, H. Akiyama, Z. P. Cai, and B. P. Zhang, “On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers,” Sci. Rep. 5, 9600 (2015).
[Crossref]

Huang, C. Y.

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Janjua, B.

Jung, D.

H. Le Minh, D. O’Brien, G. Faulkner, L. B. Zeng, K. Lee, D. Jung, Y. Oh, and E. T. Won, “100-Mb/s NRZ Visible Light Communications Using a Postequalized White LED,” IEEE Photonics Technol. Lett. 21(15), 1063–1065 (2009).
[Crossref]

Karlicek, R. F.

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Fischer, D. D. Koleske, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek., “Toward smart and ultra-efficient solid-state lighting,” Adv. Opt. Mater. 2(9), 809–836 (2014).
[Crossref]

Kawaguchi, Y.

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar(202¯1¯), ” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

Kelly, A. E.

J. M. M. Santos, S. Rajbhandari, D. Tsonev, H. Chun, B. Guilhabert, A. B. Krysa, A. E. Kelly, H. Haas, D. C. O’Brien, N. Laurand, and M. D. Dawson, “Visible light communication using InGaN optical sources with AlInGaP nanomembrane down-converters,” Opt. Express 24(9), 10020–10029 (2016).
[Crossref]

R. P. Green, J. J. D. McKendry, D. Massoubre, E. D. Gu, M. D. Dawson, and A. E. Kelly, “Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes,” Appl. Phys. Lett. 102(9), 091103 (2013).
[Crossref]

Khan, M. Z. M.

M. Z. M. Khan, H. H. Alhashim, T. K. Ng, and B. S. Ooi, “High-power and high-efficiency 1.3-µm superluminescent diode with flat-top and ultrawide emission bandwidth,” IEEE Photonics J. 7, 1600308 (2015).
[Crossref]

Koleske, D. D.

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Fischer, D. D. Koleske, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek., “Toward smart and ultra-efficient solid-state lighting,” Adv. Opt. Mater. 2(9), 809–836 (2014).
[Crossref]

Krysa, A. B.

Laino, V.

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J. F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95(8), 081107 (2009).
[Crossref]

Laurand, N.

Le Minh, H.

H. Le Minh, D. O’Brien, G. Faulkner, L. B. Zeng, K. Lee, D. Jung, Y. Oh, and E. T. Won, “100-Mb/s NRZ Visible Light Communications Using a Postequalized White LED,” IEEE Photonics Technol. Lett. 21(15), 1063–1065 (2009).
[Crossref]

Lee, C.

Lee, K.

H. Le Minh, D. O’Brien, G. Faulkner, L. B. Zeng, K. Lee, D. Jung, Y. Oh, and E. T. Won, “100-Mb/s NRZ Visible Light Communications Using a Postequalized White LED,” IEEE Photonics Technol. Lett. 21(15), 1063–1065 (2009).
[Crossref]

Leonard, J. T.

Liao, C. L.

C. L. Liao, C. L. Ho, Y. F. Chang, C. H. Wu, and M. C. Wu, “High-speed light-emitting diodes emitting at 500 nm with 463-mhz modulation bandwidth,” IEEE Electron Device Lett. 35(5), 563–565 (2014).
[Crossref]

C. L. Liao, Y. F. Chang, C. L. Ho, and M. C. Wu, “High-speed GaN-based blue light-emitting diodes with gallium-doped ZnO current spreading layer,” IEEE Electron Device Lett. 34(5), 611–613 (2013).
[Crossref]

Liu, W. J.

W. J. Liu, X. L. Hu, L. Y. Ying, S. Q. Chen, J. Y. Zhang, H. Akiyama, Z. P. Cai, and B. P. Zhang, “On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers,” Sci. Rep. 5, 9600 (2015).
[Crossref]

Margalith, T.

Massoubre, D.

R. P. Green, J. J. D. McKendry, D. Massoubre, E. D. Gu, M. D. Dawson, and A. E. Kelly, “Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes,” Appl. Phys. Lett. 102(9), 091103 (2013).
[Crossref]

McKendry, J. J. D.

R. P. Green, J. J. D. McKendry, D. Massoubre, E. D. Gu, M. D. Dawson, and A. E. Kelly, “Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes,” Appl. Phys. Lett. 102(9), 091103 (2013).
[Crossref]

Nakamura, S.

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-desouki, and B. S. Ooi, “High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications, ” Opt. Lett. 41(11), 2608–2611 (2016).
[Crossref]

C. Lee, C. Zhang, M. Cantore, R. M. Farrell, S. H. Oh, T. Margalith, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, “4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication,” Opt. Express 23(12), 16232–16237 (2015).
[Crossref]

C. Lee, C. Shen, H. M. Oubei, M. Cantore, B. Janjua, T. K. Ng, R. M. Farrell, M. M. El-Desouki, J. S. Speck, S. Nakamura, B. S. Ooi, and S. P. DenBaars, “2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system,” Opt. Express 23(23), 29779–29787 (2015).
[Crossref]

Y. Zhao, Q. M. Yan, D. Feezell, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical polarization characteristics of semipolar (303¯1) and (303¯1¯) InGaN/GaN light-emitting diodes, ” Opt. Express 21(S1), A53–A59 (2013).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar(202¯1¯), ” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar(202¯1¯), ” J. Disp. Technol. 9(4), 190–198 (2013).
[Crossref]

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power, low-efficiency-droop semipolar(202¯1¯), ” Appl. Phys. Express 5(6), 062103 (2012).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar(202¯1¯), ” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
[Crossref]

Ng, T. K.

O’Brien, D.

H. Le Minh, D. O’Brien, G. Faulkner, L. B. Zeng, K. Lee, D. Jung, Y. Oh, and E. T. Won, “100-Mb/s NRZ Visible Light Communications Using a Postequalized White LED,” IEEE Photonics Technol. Lett. 21(15), 1063–1065 (2009).
[Crossref]

O’Brien, D. C.

Oh, S. H.

Oh, Y.

H. Le Minh, D. O’Brien, G. Faulkner, L. B. Zeng, K. Lee, D. Jung, Y. Oh, and E. T. Won, “100-Mb/s NRZ Visible Light Communications Using a Postequalized White LED,” IEEE Photonics Technol. Lett. 21(15), 1063–1065 (2009).
[Crossref]

Ooi, B. S.

Oubei, H. M.

Pan, C. C.

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power, low-efficiency-droop semipolar(202¯1¯), ” Appl. Phys. Express 5(6), 062103 (2012).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar(202¯1¯), ” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Pimputkar, S.

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
[Crossref]

Pourhashemi, A.

Rajbhandari, S.

Rezzonico, R.

M. Rossetti, J. Dorsaz, R. Rezzonico, M. Duelk, C. Velez, E. Feltin, A. Castiglia, G. Cosendey, J. F. Carlin, and N. Grandjean, “High power blue-violet superluminescent light emitting diodes with InGaN quantum wells,” Appl. Phys. Express 3(6), 061002 (2010).
[Crossref]

Rossetti, M.

M. Rossetti, J. Dorsaz, R. Rezzonico, M. Duelk, C. Velez, E. Feltin, A. Castiglia, G. Cosendey, J. F. Carlin, and N. Grandjean, “High power blue-violet superluminescent light emitting diodes with InGaN quantum wells,” Appl. Phys. Express 3(6), 061002 (2010).
[Crossref]

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J. F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95(8), 081107 (2009).
[Crossref]

Santos, J. M. M.

Serafimovski, N.

H. Burchardt, N. Serafimovski, D. Tsonev, S. Videv, and H. Haas, “VLC: beyond point-to-point communication,” IEEE Commun. Mag. 52(7), 98–105 (2014).
[Crossref]

Shen, C.

Speck, J. S.

C. Shen, T. K. Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-desouki, and B. S. Ooi, “High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications, ” Opt. Lett. 41(11), 2608–2611 (2016).
[Crossref]

C. Lee, C. Zhang, M. Cantore, R. M. Farrell, S. H. Oh, T. Margalith, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, “4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication,” Opt. Express 23(12), 16232–16237 (2015).
[Crossref]

C. Lee, C. Shen, H. M. Oubei, M. Cantore, B. Janjua, T. K. Ng, R. M. Farrell, M. M. El-Desouki, J. S. Speck, S. Nakamura, B. S. Ooi, and S. P. DenBaars, “2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system,” Opt. Express 23(23), 29779–29787 (2015).
[Crossref]

Y. Zhao, Q. M. Yan, D. Feezell, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical polarization characteristics of semipolar (303¯1) and (303¯1¯) InGaN/GaN light-emitting diodes, ” Opt. Express 21(S1), A53–A59 (2013).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar(202¯1¯), ” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar(202¯1¯), ” J. Disp. Technol. 9(4), 190–198 (2013).
[Crossref]

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power, low-efficiency-droop semipolar(202¯1¯), ” Appl. Phys. Express 5(6), 062103 (2012).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar(202¯1¯), ” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
[Crossref]

Subramania, G. S.

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Fischer, D. D. Koleske, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek., “Toward smart and ultra-efficient solid-state lighting,” Adv. Opt. Mater. 2(9), 809–836 (2014).
[Crossref]

Sulmoni, L.

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J. F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95(8), 081107 (2009).
[Crossref]

Tanaka, S.

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar(202¯1¯), ” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power, low-efficiency-droop semipolar(202¯1¯), ” Appl. Phys. Express 5(6), 062103 (2012).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar(202¯1¯), ” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Tsao, J. Y.

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Fischer, D. D. Koleske, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek., “Toward smart and ultra-efficient solid-state lighting,” Adv. Opt. Mater. 2(9), 809–836 (2014).
[Crossref]

Tsonev, D.

Van de Walle, C. G.

Y. Zhao, Q. M. Yan, D. Feezell, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical polarization characteristics of semipolar (303¯1) and (303¯1¯) InGaN/GaN light-emitting diodes, ” Opt. Express 21(S1), A53–A59 (2013).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Velez, C.

M. Rossetti, J. Dorsaz, R. Rezzonico, M. Duelk, C. Velez, E. Feltin, A. Castiglia, G. Cosendey, J. F. Carlin, and N. Grandjean, “High power blue-violet superluminescent light emitting diodes with InGaN quantum wells,” Appl. Phys. Express 3(6), 061002 (2010).
[Crossref]

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J. F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95(8), 081107 (2009).
[Crossref]

Videv, S.

H. Burchardt, N. Serafimovski, D. Tsonev, S. Videv, and H. Haas, “VLC: beyond point-to-point communication,” IEEE Commun. Mag. 52(7), 98–105 (2014).
[Crossref]

Wang, G. T.

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Fischer, D. D. Koleske, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek., “Toward smart and ultra-efficient solid-state lighting,” Adv. Opt. Mater. 2(9), 809–836 (2014).
[Crossref]

Wierer, J. J.

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Fischer, D. D. Koleske, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek., “Toward smart and ultra-efficient solid-state lighting,” Adv. Opt. Mater. 2(9), 809–836 (2014).
[Crossref]

Won, E. T.

H. Le Minh, D. O’Brien, G. Faulkner, L. B. Zeng, K. Lee, D. Jung, Y. Oh, and E. T. Won, “100-Mb/s NRZ Visible Light Communications Using a Postequalized White LED,” IEEE Photonics Technol. Lett. 21(15), 1063–1065 (2009).
[Crossref]

Wu, C. H.

C. L. Liao, C. L. Ho, Y. F. Chang, C. H. Wu, and M. C. Wu, “High-speed light-emitting diodes emitting at 500 nm with 463-mhz modulation bandwidth,” IEEE Electron Device Lett. 35(5), 563–565 (2014).
[Crossref]

Wu, F.

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar(202¯1¯), ” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power, low-efficiency-droop semipolar(202¯1¯), ” Appl. Phys. Express 5(6), 062103 (2012).
[Crossref]

Wu, M. C.

C. L. Liao, C. L. Ho, Y. F. Chang, C. H. Wu, and M. C. Wu, “High-speed light-emitting diodes emitting at 500 nm with 463-mhz modulation bandwidth,” IEEE Electron Device Lett. 35(5), 563–565 (2014).
[Crossref]

C. L. Liao, Y. F. Chang, C. L. Ho, and M. C. Wu, “High-speed GaN-based blue light-emitting diodes with gallium-doped ZnO current spreading layer,” IEEE Electron Device Lett. 34(5), 611–613 (2013).
[Crossref]

Yan, Q.

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Yan, Q. M.

Ying, L. Y.

W. J. Liu, X. L. Hu, L. Y. Ying, S. Q. Chen, J. Y. Zhang, H. Akiyama, Z. P. Cai, and B. P. Zhang, “On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers,” Sci. Rep. 5, 9600 (2015).
[Crossref]

Zeng, L. B.

H. Le Minh, D. O’Brien, G. Faulkner, L. B. Zeng, K. Lee, D. Jung, Y. Oh, and E. T. Won, “100-Mb/s NRZ Visible Light Communications Using a Postequalized White LED,” IEEE Photonics Technol. Lett. 21(15), 1063–1065 (2009).
[Crossref]

Zhang, B. P.

W. J. Liu, X. L. Hu, L. Y. Ying, S. Q. Chen, J. Y. Zhang, H. Akiyama, Z. P. Cai, and B. P. Zhang, “On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers,” Sci. Rep. 5, 9600 (2015).
[Crossref]

Zhang, C.

Zhang, J. Y.

W. J. Liu, X. L. Hu, L. Y. Ying, S. Q. Chen, J. Y. Zhang, H. Akiyama, Z. P. Cai, and B. P. Zhang, “On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers,” Sci. Rep. 5, 9600 (2015).
[Crossref]

Zhao, Y.

Y. Zhao, Q. M. Yan, D. Feezell, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical polarization characteristics of semipolar (303¯1) and (303¯1¯) InGaN/GaN light-emitting diodes, ” Opt. Express 21(S1), A53–A59 (2013).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar(202¯1¯), ” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power, low-efficiency-droop semipolar(202¯1¯), ” Appl. Phys. Express 5(6), 062103 (2012).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar(202¯1¯), ” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

Adv. Opt. Mater. (1)

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Fischer, D. D. Koleske, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek., “Toward smart and ultra-efficient solid-state lighting,” Adv. Opt. Mater. 2(9), 809–836 (2014).
[Crossref]

Appl. Phys. Express (4)

M. Rossetti, J. Dorsaz, R. Rezzonico, M. Duelk, C. Velez, E. Feltin, A. Castiglia, G. Cosendey, J. F. Carlin, and N. Grandjean, “High power blue-violet superluminescent light emitting diodes with InGaN quantum wells,” Appl. Phys. Express 3(6), 061002 (2010).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar(202¯1¯), ” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power, low-efficiency-droop semipolar(202¯1¯), ” Appl. Phys. Express 5(6), 062103 (2012).
[Crossref]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-violet semipolar(202¯1¯), ” Appl. Phys. Express 4(8), 082104 (2011).
[Crossref]

Appl. Phys. Lett. (3)

R. P. Green, J. J. D. McKendry, D. Massoubre, E. D. Gu, M. D. Dawson, and A. E. Kelly, “Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes,” Appl. Phys. Lett. 102(9), 091103 (2013).
[Crossref]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[Crossref]

E. Feltin, A. Castiglia, G. Cosendey, L. Sulmoni, J. F. Carlin, N. Grandjean, M. Rossetti, J. Dorsaz, V. Laino, M. Duelk, and C. Velez, “Broadband blue superluminescent light-emitting diodes based on GaN,” Appl. Phys. Lett. 95(8), 081107 (2009).
[Crossref]

IEEE Commun. Mag. (1)

H. Burchardt, N. Serafimovski, D. Tsonev, S. Videv, and H. Haas, “VLC: beyond point-to-point communication,” IEEE Commun. Mag. 52(7), 98–105 (2014).
[Crossref]

IEEE Electron Device Lett. (2)

C. L. Liao, C. L. Ho, Y. F. Chang, C. H. Wu, and M. C. Wu, “High-speed light-emitting diodes emitting at 500 nm with 463-mhz modulation bandwidth,” IEEE Electron Device Lett. 35(5), 563–565 (2014).
[Crossref]

C. L. Liao, Y. F. Chang, C. L. Ho, and M. C. Wu, “High-speed GaN-based blue light-emitting diodes with gallium-doped ZnO current spreading layer,” IEEE Electron Device Lett. 34(5), 611–613 (2013).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

M. H. Crawford, “LEDs for solid-state lighting: performance challenges and recent advances,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1028–1040 (2009).
[Crossref]

IEEE Photonics J. (1)

M. Z. M. Khan, H. H. Alhashim, T. K. Ng, and B. S. Ooi, “High-power and high-efficiency 1.3-µm superluminescent diode with flat-top and ultrawide emission bandwidth,” IEEE Photonics J. 7, 1600308 (2015).
[Crossref]

IEEE Photonics Technol. Lett. (1)

H. Le Minh, D. O’Brien, G. Faulkner, L. B. Zeng, K. Lee, D. Jung, Y. Oh, and E. T. Won, “100-Mb/s NRZ Visible Light Communications Using a Postequalized White LED,” IEEE Photonics Technol. Lett. 21(15), 1063–1065 (2009).
[Crossref]

J. Disp. Technol. (2)

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar(202¯1¯), ” J. Disp. Technol. 9(4), 190–198 (2013).
[Crossref]

N. Abu-Ageel and D. Aslam, “Laser-driven visible solid-state light source for etendue-limited applications,” J. Disp. Technol. 10(8), 700–703 (2014).
[Crossref]

Nat. Photonics (1)

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
[Crossref]

Opt. Express (5)

Opt. Lett. (1)

Sci. Rep. (1)

W. J. Liu, X. L. Hu, L. Y. Ying, S. Q. Chen, J. Y. Zhang, H. Akiyama, Z. P. Cai, and B. P. Zhang, “On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers,” Sci. Rep. 5, 9600 (2015).
[Crossref]

Other (1)

P. Govind, Agrawal, Fiber-Optic Communication Systems, 4th ed. (Wiley, 2010), Chap. 3.

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Figures (5)

Fig. 1
Fig. 1

(a) Layer structure, and (b) 3D illustration of the 405-nm emitting superluminescent diode on semipolar GaN substrate with tilted facet configuration. The thickness for P+-GaN, p-GaN, P-InGaN SCH, AlGaN EBL, N-InGaN SCH, N-GaN layer are 10 nm, 600 nm, 60 nm, 16 nm, 60 nm, 350 nm, respectively. The length of the device is 590 µm. The GS contact pitch size is 50 µm. The device has InGaN/GaN multi-quantum-wells (MQWs) as the active region.

Fig. 2
Fig. 2

Plot of: (a) electroluminescence (EL) spectra of the SLD under current injection of 50 mA - 400 mA; (b) Comparison of EL spectra from an LD, SLD and LED at 400 mA; (c) FWHM and peak wavelength of the SLD as a function of injection current at room temperature.

Fig. 3
Fig. 3

Plot of: (a) Optical power vs. injection current (L-I) from the top emission (SE) and edge emission (ASE + SE) of the SLD. The current density is labeled as well. Inset: Photo of the edge-emitting SLD operating at 300 mA. (b) Current vs. voltage (I-V) relation of the SLD. Inset: I-V curve in log scale. (c) Capacitance vs. voltage (C-V) characteristics of the SLD. (d). 1/C2 vs. voltage relation with a slope of −4.2 × 1018.

Fig. 4
Fig. 4

(a) Modulation response at different current. (b) −3 dB bandwidth vs. current of the SLD.

Fig. 5
Fig. 5

Plot of bit-error rate (BER) vs. data rate for on-off keying modulation of SLD. The forward error correction (FEC) limit BER of 3.8 × 10−3 is indicated. Insets: the eye diagrams for data rates of 622 Mbps, 1.06 Gbps, and 1.3 Gbps.

Equations (1)

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f 3dB = 3 2π τ e

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