Abstract

We present the concept, the fabrication processes and the experimental results for materials and optics that can be used for terahertz field-effect transistor detector focal plane arrays. More specifically, we propose 3D printed arrays of a new type – diffractive multi-zone lenses of which the performance is superior to that of previously used mono-zone diffractive or refractive elements and evaluate them with GaN/AlGaN field-effect transistor terahertz detectors. Experiments performed in the 300-GHz atmospheric window show that the lens arrays offer both a good efficiency and good uniformity, and may improve the signal-to-noise ratio of the terahertz field-effect transistor detectors by more than one order of magnitude. In practice, we tested 3 × 12 lens linear arrays with printed circuit board THz detector arrays used in postal security scanners and observed significant signal-to-noise improvements. Our results clearly show that the proposed technology provides a way to produce cost-effective, reproducible, flat optics for large-size field-effect transistor THz-detector focal plane arrays.

© 2016 Optical Society of America

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References

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2016 (2)

D. Coquillat, J. Marczewski, P. Kopyt, N. Dyakonova, B. Giffard, and W. Knap, “Improvement of terahertz field effect transistor detectors by substrate thinning and radiation losses reduction,” Opt. Express 24(1), 272–281 (2016).
[Crossref] [PubMed]

F. Zhou, W. Cao, B. Dong, T. Reissman, W. Zhang, and C. Sun, “Additive manufacturing of 3D terahertz gradient-refractive index lens,” Adv. Opt. Mater. 4(7), 1034–1040 (2016).
[Crossref]

2015 (1)

J. Suszek, A. Siemion, M. S. Bieda, N. Błocki, D. Coquillat, G. Cywiński, E. Czerwińska, M. Doch, A. Kowalczyk, N. Palka, A. Sobczyk, P. Zagrajek, M. Zaremba, A. Kolodziejczyk, W. Knap, and M. Sypek, “3-D-printed flat optics for THz linear scanners,” IEEE Trans. Terahertz Sci. Technol. 5(2), 314–316 (2015).
[Crossref]

2014 (1)

S. F. Busch, M. Weidenbach, M. Fey, F. Schäfer, T. Probst, and M. Koch, “Optical properties of 3D printable plastics in the THz regime and their application for 3D printed THz optics,” J. Infrared Millim. Terahertz Waves 35(12), 993–997 (2014).
[Crossref]

2013 (4)

T. Nitta, M. Naruse, Y. Sekimoto, K. Mitsui, N. Okada, K. Karatsu, M. Sekine, H. Matsuo, T. Noguchi, Y. Uzawa, M. Seta, and N. Nakai, “Beam pattern measurements of millimeter-wave kinetic inductance detector camera with direct machined silicon lens array,” IEEE Trans. Terahertz Sci. Technol. 3(1), 56–62 (2013).
[Crossref]

A. Tomasino, A. Parisi, S. Stivala, P. Livreri, A. C. Cino, A. C. Busacca, M. Peccianti, and R. Morandotti, “Wideband THz time domain spectroscopy based on optical rectification and electro-optic sampling,” Sci. Rep. 3, 3116 (2013).
[Crossref] [PubMed]

W. Knap, S. Rumyantsev, M. S. Vitiello, D. Coquillat, S. Blin, N. Dyakonova, M. Shur, F. Teppe, A. Tredicucci, and T. Nagatsuma, “Nanometer size field effect transistors for terahertz detectors,” Nanotechnology 24(21), 214002 (2013).
[Crossref] [PubMed]

N. Llombart, C. Lee, M. Alonso-delPino, G. Chattopadhyay, C. J. Kubiak, L. Jofre, and I. Mehdi, and Student Member, “Silicon micromachined lens antenna for THz integrated heterodyne arrays,” IEEE Trans. Terahertz Sci. Technol. 3(5), 515–523 (2013).
[Crossref]

2012 (2)

M. Sypek, J.-L. Coutaz, A. Kolodziejczyk, M. Makowski, and J. Suszek, “Aberrations of the large aperture attenuating THz lenses,” Proc. SPIE 8261, 826110 (2012).
[Crossref]

J. Bomba, A. Sobczyk, A. Siemion, K. Świtkowski, C. Jastrzębski, A. Siemion, J. Suszek, and M. Sypek, “The time domain spectroscopy goniometric setup characterization by the utilization of the plastic diffraction grating,” Photonics Lett. Pol. 4(3), 121–123 (2012).
[Crossref]

2011 (2)

S. Wietzke, C. Jansen, M. Reuter, T. Jung, D. Kraft, S. Chatterjee, B. M. Fischer, and M. Koch, “Terahertz spectroscopy on polymers: A review of morphological studies,” J. Mol. Struct. 1006(1–3), 41–51 (2011).
[Crossref]

T. Trzcinski, N. Pałka, and M. Szustakowski, “THz spectroscopy of explosive-related simulants and oxidizers,” in Bull. Pol. Acad. Sci. Tech. (Paris) 59(4), 445–447 (2011).

2010 (2)

E. Seok, D. Shim, C. Mao, R. Han, S. Sankaran, C. Cao, W. Knap, and K. O. Kenneth, “Progress and challenges towards terahertz CMOS integrated circuits,” IEEE J. Solid-St. Circulation 45(8), 1554–1564 (2010).

S. Nadar, H. Videlier, D. Coquillat, F. Teppe, M. Sakowicz, N. Dyakonova, W. Knap, D. Seliuta, I. Kašalynas, and G. Valušis, “Room temperature imaging at 1.63 and 2.54 with field effect transistor,” J. Appl. Phys. 108(5), 054508 (2010).
[Crossref]

2009 (2)

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: physics and first imaging applications,” J. Infrared Millim. Te. 30(12), 1319–1337 (2009).

E. Ojefors, U. Pfeiffer, A. Lisauskas, and H. Roskos, “0.65 THz focal-plane array in a quarter-micron CMOS process technology,” IEEE J. Solid-St. Circulation 44(7), 1968–1976 (2009).

2008 (3)

Y. M. Meziani, H. Handa, W. Knap, T. Otsuji, E. Sano, V. V. Popov, G. M. Tsymbalov, D. Coquillat, and F. Teppe, “Room temperature terahertz emission from grating coupled two-dimensional plasmons,” Appl. Phys. Lett. 92(20), 201108 (2008).
[Crossref]

B. Pradarutti, R. Müller, W. Freese, G. Matthäus, S. Riehemann, G. Notni, S. Nolte, and A. Tünnermann, “Terahertz line detection by a microlens array coupled photoconductive antenna array,” Opt. Express 16(22), 18443–18450 (2008).
[Crossref] [PubMed]

M. Sakowicz, J. Łusakowski, K. Karpierz, M. Grynberg, W. Knap, and W. Gwarek, “Polarization sensitive detection of 100 GHz radiation by high mobility field-effect transistors,” J. Appl. Phys. 104(2), 024519 (2008).
[Crossref]

2007 (2)

E. D. Walsby, J. Alton, C. Worrall, H. E. Beere, D. A. Ritchie, and D. R. S. Cumming, “Imprinted diffractive optics for terahertz radiation,” Opt. Lett. 32(9), 1141–1143 (2007).
[Crossref] [PubMed]

R. Appleby and H. B. Wallace, “Standoff detection of weapons and contraband in the 100 GHz to 1 THz region,” IEEE Trans. Antenn. Propag. 55(11), 2944–2956 (2007).
[Crossref]

2006 (2)

N. Dyakonova, A. El Fatimy, J. Łusakowski, W. Knap, M. I. Dyakonov, M. A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Y. Roelens, Ch. Gaquiere, D. Theron, and A. Cappy, “Room temperature terahertz emission from nanometer field-effect transistors,” Appl. Phys. Lett. 88(14), 141906 (2006).
[Crossref]

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer Transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[Crossref]

2005 (2)

N. Dyakonova, F. Teppe, J. Łusakowski, W. Knap, M. Levinshtein, A. P. Dmitriev, M. S. Shur, S. Bollaert, and A. Cappy, “Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors,” J. Appl. Phys. 97(11), 114313 (2005).
[Crossref]

C. Skierbiszewski, K. Dybko, W. Knap, M. Siekacz, W. Krupczyński, G. Nowak, M. Bockowski, J. Łusakowski, Z. Wasilewski, D. K. Maude, T. Suski, and S. Porowski, “High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy,” Appl. Phys. Lett. 86(10), 102106 (2005).
[Crossref]

2004 (1)

W. Knap, J. Łusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, and M. S. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84(13), 2331 (2004).
[Crossref]

2003 (1)

M. Sypek, C. Prokopowicz, and M. Górecki, “Image multiplying and high frequency oscillations effects in the Fresnel region light propagation simulation,” Opt. Eng. 42(11), 3158–3164 (2003).
[Crossref]

1996 (3)

Z. Jaroszewicz, A. Kolodziejczyk, M. Sypek, and C. Gómez-Reino, “Non-paraxial analytical solution for the generation of focal curves,” J. Mod. Opt. 43(3), 617–637 (1996).
[Crossref]

X. Yan and P. Gu, “A review of rapid prototyping technologies and systems,” Comput. Aided Des. 28(4), 307–318 (1996).
[Crossref]

M. I. Dyakonov and M. S. Shur, “Plasma wave electronics: novel terahertz devices using two dimensional electron fluid,” IEEE Trans. Electron Dev. 43(10), 1640–1645 (1996).
[Crossref]

1995 (1)

M. Sypek, “Light propagation in the Fresnel region. New numerical approach,” Opt. Commun. 116(1–3), 43–48 (1995).
[Crossref]

1993 (1)

M. Dyakonov and M. Shur, “Shallow water analogy for a ballistic field effect transistor: new mechanism of plasma wave generation by dc current,” Phys. Rev. Lett. 71(15), 2465–2468 (1993).
[Crossref] [PubMed]

1990 (1)

Alonso-delPino, M.

N. Llombart, C. Lee, M. Alonso-delPino, G. Chattopadhyay, C. J. Kubiak, L. Jofre, and I. Mehdi, and Student Member, “Silicon micromachined lens antenna for THz integrated heterodyne arrays,” IEEE Trans. Terahertz Sci. Technol. 3(5), 515–523 (2013).
[Crossref]

Alton, J.

Appleby, R.

R. Appleby and H. B. Wallace, “Standoff detection of weapons and contraband in the 100 GHz to 1 THz region,” IEEE Trans. Antenn. Propag. 55(11), 2944–2956 (2007).
[Crossref]

Beere, H. E.

Bieda, M. S.

J. Suszek, A. Siemion, M. S. Bieda, N. Błocki, D. Coquillat, G. Cywiński, E. Czerwińska, M. Doch, A. Kowalczyk, N. Palka, A. Sobczyk, P. Zagrajek, M. Zaremba, A. Kolodziejczyk, W. Knap, and M. Sypek, “3-D-printed flat optics for THz linear scanners,” IEEE Trans. Terahertz Sci. Technol. 5(2), 314–316 (2015).
[Crossref]

Blin, S.

W. Knap, S. Rumyantsev, M. S. Vitiello, D. Coquillat, S. Blin, N. Dyakonova, M. Shur, F. Teppe, A. Tredicucci, and T. Nagatsuma, “Nanometer size field effect transistors for terahertz detectors,” Nanotechnology 24(21), 214002 (2013).
[Crossref] [PubMed]

Blocki, N.

J. Suszek, A. Siemion, M. S. Bieda, N. Błocki, D. Coquillat, G. Cywiński, E. Czerwińska, M. Doch, A. Kowalczyk, N. Palka, A. Sobczyk, P. Zagrajek, M. Zaremba, A. Kolodziejczyk, W. Knap, and M. Sypek, “3-D-printed flat optics for THz linear scanners,” IEEE Trans. Terahertz Sci. Technol. 5(2), 314–316 (2015).
[Crossref]

Bockowski, M.

C. Skierbiszewski, K. Dybko, W. Knap, M. Siekacz, W. Krupczyński, G. Nowak, M. Bockowski, J. Łusakowski, Z. Wasilewski, D. K. Maude, T. Suski, and S. Porowski, “High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy,” Appl. Phys. Lett. 86(10), 102106 (2005).
[Crossref]

Bollaert, S.

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer Transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[Crossref]

N. Dyakonova, A. El Fatimy, J. Łusakowski, W. Knap, M. I. Dyakonov, M. A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Y. Roelens, Ch. Gaquiere, D. Theron, and A. Cappy, “Room temperature terahertz emission from nanometer field-effect transistors,” Appl. Phys. Lett. 88(14), 141906 (2006).
[Crossref]

N. Dyakonova, F. Teppe, J. Łusakowski, W. Knap, M. Levinshtein, A. P. Dmitriev, M. S. Shur, S. Bollaert, and A. Cappy, “Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors,” J. Appl. Phys. 97(11), 114313 (2005).
[Crossref]

W. Knap, J. Łusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, and M. S. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84(13), 2331 (2004).
[Crossref]

Bomba, J.

J. Bomba, A. Sobczyk, A. Siemion, K. Świtkowski, C. Jastrzębski, A. Siemion, J. Suszek, and M. Sypek, “The time domain spectroscopy goniometric setup characterization by the utilization of the plastic diffraction grating,” Photonics Lett. Pol. 4(3), 121–123 (2012).
[Crossref]

Busacca, A. C.

A. Tomasino, A. Parisi, S. Stivala, P. Livreri, A. C. Cino, A. C. Busacca, M. Peccianti, and R. Morandotti, “Wideband THz time domain spectroscopy based on optical rectification and electro-optic sampling,” Sci. Rep. 3, 3116 (2013).
[Crossref] [PubMed]

Busch, S. F.

S. F. Busch, M. Weidenbach, M. Fey, F. Schäfer, T. Probst, and M. Koch, “Optical properties of 3D printable plastics in the THz regime and their application for 3D printed THz optics,” J. Infrared Millim. Terahertz Waves 35(12), 993–997 (2014).
[Crossref]

Cao, C.

E. Seok, D. Shim, C. Mao, R. Han, S. Sankaran, C. Cao, W. Knap, and K. O. Kenneth, “Progress and challenges towards terahertz CMOS integrated circuits,” IEEE J. Solid-St. Circulation 45(8), 1554–1564 (2010).

Cao, W.

F. Zhou, W. Cao, B. Dong, T. Reissman, W. Zhang, and C. Sun, “Additive manufacturing of 3D terahertz gradient-refractive index lens,” Adv. Opt. Mater. 4(7), 1034–1040 (2016).
[Crossref]

Cappy, A.

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer Transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[Crossref]

N. Dyakonova, A. El Fatimy, J. Łusakowski, W. Knap, M. I. Dyakonov, M. A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Y. Roelens, Ch. Gaquiere, D. Theron, and A. Cappy, “Room temperature terahertz emission from nanometer field-effect transistors,” Appl. Phys. Lett. 88(14), 141906 (2006).
[Crossref]

N. Dyakonova, F. Teppe, J. Łusakowski, W. Knap, M. Levinshtein, A. P. Dmitriev, M. S. Shur, S. Bollaert, and A. Cappy, “Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors,” J. Appl. Phys. 97(11), 114313 (2005).
[Crossref]

W. Knap, J. Łusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, and M. S. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84(13), 2331 (2004).
[Crossref]

Chatterjee, S.

S. Wietzke, C. Jansen, M. Reuter, T. Jung, D. Kraft, S. Chatterjee, B. M. Fischer, and M. Koch, “Terahertz spectroscopy on polymers: A review of morphological studies,” J. Mol. Struct. 1006(1–3), 41–51 (2011).
[Crossref]

Chattopadhyay, G.

N. Llombart, C. Lee, M. Alonso-delPino, G. Chattopadhyay, C. J. Kubiak, L. Jofre, and I. Mehdi, and Student Member, “Silicon micromachined lens antenna for THz integrated heterodyne arrays,” IEEE Trans. Terahertz Sci. Technol. 3(5), 515–523 (2013).
[Crossref]

Cino, A. C.

A. Tomasino, A. Parisi, S. Stivala, P. Livreri, A. C. Cino, A. C. Busacca, M. Peccianti, and R. Morandotti, “Wideband THz time domain spectroscopy based on optical rectification and electro-optic sampling,” Sci. Rep. 3, 3116 (2013).
[Crossref] [PubMed]

Coquillat, D.

D. Coquillat, J. Marczewski, P. Kopyt, N. Dyakonova, B. Giffard, and W. Knap, “Improvement of terahertz field effect transistor detectors by substrate thinning and radiation losses reduction,” Opt. Express 24(1), 272–281 (2016).
[Crossref] [PubMed]

J. Suszek, A. Siemion, M. S. Bieda, N. Błocki, D. Coquillat, G. Cywiński, E. Czerwińska, M. Doch, A. Kowalczyk, N. Palka, A. Sobczyk, P. Zagrajek, M. Zaremba, A. Kolodziejczyk, W. Knap, and M. Sypek, “3-D-printed flat optics for THz linear scanners,” IEEE Trans. Terahertz Sci. Technol. 5(2), 314–316 (2015).
[Crossref]

W. Knap, S. Rumyantsev, M. S. Vitiello, D. Coquillat, S. Blin, N. Dyakonova, M. Shur, F. Teppe, A. Tredicucci, and T. Nagatsuma, “Nanometer size field effect transistors for terahertz detectors,” Nanotechnology 24(21), 214002 (2013).
[Crossref] [PubMed]

S. Nadar, H. Videlier, D. Coquillat, F. Teppe, M. Sakowicz, N. Dyakonova, W. Knap, D. Seliuta, I. Kašalynas, and G. Valušis, “Room temperature imaging at 1.63 and 2.54 with field effect transistor,” J. Appl. Phys. 108(5), 054508 (2010).
[Crossref]

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: physics and first imaging applications,” J. Infrared Millim. Te. 30(12), 1319–1337 (2009).

Y. M. Meziani, H. Handa, W. Knap, T. Otsuji, E. Sano, V. V. Popov, G. M. Tsymbalov, D. Coquillat, and F. Teppe, “Room temperature terahertz emission from grating coupled two-dimensional plasmons,” Appl. Phys. Lett. 92(20), 201108 (2008).
[Crossref]

Coutaz, J.-L.

M. Sypek, J.-L. Coutaz, A. Kolodziejczyk, M. Makowski, and J. Suszek, “Aberrations of the large aperture attenuating THz lenses,” Proc. SPIE 8261, 826110 (2012).
[Crossref]

Cumming, D. R. S.

Cywinski, G.

J. Suszek, A. Siemion, M. S. Bieda, N. Błocki, D. Coquillat, G. Cywiński, E. Czerwińska, M. Doch, A. Kowalczyk, N. Palka, A. Sobczyk, P. Zagrajek, M. Zaremba, A. Kolodziejczyk, W. Knap, and M. Sypek, “3-D-printed flat optics for THz linear scanners,” IEEE Trans. Terahertz Sci. Technol. 5(2), 314–316 (2015).
[Crossref]

Czerwinska, E.

J. Suszek, A. Siemion, M. S. Bieda, N. Błocki, D. Coquillat, G. Cywiński, E. Czerwińska, M. Doch, A. Kowalczyk, N. Palka, A. Sobczyk, P. Zagrajek, M. Zaremba, A. Kolodziejczyk, W. Knap, and M. Sypek, “3-D-printed flat optics for THz linear scanners,” IEEE Trans. Terahertz Sci. Technol. 5(2), 314–316 (2015).
[Crossref]

Dmitriev, A. P.

N. Dyakonova, F. Teppe, J. Łusakowski, W. Knap, M. Levinshtein, A. P. Dmitriev, M. S. Shur, S. Bollaert, and A. Cappy, “Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors,” J. Appl. Phys. 97(11), 114313 (2005).
[Crossref]

Doch, M.

J. Suszek, A. Siemion, M. S. Bieda, N. Błocki, D. Coquillat, G. Cywiński, E. Czerwińska, M. Doch, A. Kowalczyk, N. Palka, A. Sobczyk, P. Zagrajek, M. Zaremba, A. Kolodziejczyk, W. Knap, and M. Sypek, “3-D-printed flat optics for THz linear scanners,” IEEE Trans. Terahertz Sci. Technol. 5(2), 314–316 (2015).
[Crossref]

Dong, B.

F. Zhou, W. Cao, B. Dong, T. Reissman, W. Zhang, and C. Sun, “Additive manufacturing of 3D terahertz gradient-refractive index lens,” Adv. Opt. Mater. 4(7), 1034–1040 (2016).
[Crossref]

Dyakonov, M.

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: physics and first imaging applications,” J. Infrared Millim. Te. 30(12), 1319–1337 (2009).

M. Dyakonov and M. Shur, “Shallow water analogy for a ballistic field effect transistor: new mechanism of plasma wave generation by dc current,” Phys. Rev. Lett. 71(15), 2465–2468 (1993).
[Crossref] [PubMed]

Dyakonov, M. I.

N. Dyakonova, A. El Fatimy, J. Łusakowski, W. Knap, M. I. Dyakonov, M. A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Y. Roelens, Ch. Gaquiere, D. Theron, and A. Cappy, “Room temperature terahertz emission from nanometer field-effect transistors,” Appl. Phys. Lett. 88(14), 141906 (2006).
[Crossref]

M. I. Dyakonov and M. S. Shur, “Plasma wave electronics: novel terahertz devices using two dimensional electron fluid,” IEEE Trans. Electron Dev. 43(10), 1640–1645 (1996).
[Crossref]

Dyakonova, N.

D. Coquillat, J. Marczewski, P. Kopyt, N. Dyakonova, B. Giffard, and W. Knap, “Improvement of terahertz field effect transistor detectors by substrate thinning and radiation losses reduction,” Opt. Express 24(1), 272–281 (2016).
[Crossref] [PubMed]

W. Knap, S. Rumyantsev, M. S. Vitiello, D. Coquillat, S. Blin, N. Dyakonova, M. Shur, F. Teppe, A. Tredicucci, and T. Nagatsuma, “Nanometer size field effect transistors for terahertz detectors,” Nanotechnology 24(21), 214002 (2013).
[Crossref] [PubMed]

S. Nadar, H. Videlier, D. Coquillat, F. Teppe, M. Sakowicz, N. Dyakonova, W. Knap, D. Seliuta, I. Kašalynas, and G. Valušis, “Room temperature imaging at 1.63 and 2.54 with field effect transistor,” J. Appl. Phys. 108(5), 054508 (2010).
[Crossref]

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: physics and first imaging applications,” J. Infrared Millim. Te. 30(12), 1319–1337 (2009).

N. Dyakonova, A. El Fatimy, J. Łusakowski, W. Knap, M. I. Dyakonov, M. A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Y. Roelens, Ch. Gaquiere, D. Theron, and A. Cappy, “Room temperature terahertz emission from nanometer field-effect transistors,” Appl. Phys. Lett. 88(14), 141906 (2006).
[Crossref]

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer Transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[Crossref]

N. Dyakonova, F. Teppe, J. Łusakowski, W. Knap, M. Levinshtein, A. P. Dmitriev, M. S. Shur, S. Bollaert, and A. Cappy, “Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors,” J. Appl. Phys. 97(11), 114313 (2005).
[Crossref]

Dybko, K.

C. Skierbiszewski, K. Dybko, W. Knap, M. Siekacz, W. Krupczyński, G. Nowak, M. Bockowski, J. Łusakowski, Z. Wasilewski, D. K. Maude, T. Suski, and S. Porowski, “High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy,” Appl. Phys. Lett. 86(10), 102106 (2005).
[Crossref]

El Fatimy, A.

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: physics and first imaging applications,” J. Infrared Millim. Te. 30(12), 1319–1337 (2009).

N. Dyakonova, A. El Fatimy, J. Łusakowski, W. Knap, M. I. Dyakonov, M. A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Y. Roelens, Ch. Gaquiere, D. Theron, and A. Cappy, “Room temperature terahertz emission from nanometer field-effect transistors,” Appl. Phys. Lett. 88(14), 141906 (2006).
[Crossref]

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer Transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[Crossref]

Fey, M.

S. F. Busch, M. Weidenbach, M. Fey, F. Schäfer, T. Probst, and M. Koch, “Optical properties of 3D printable plastics in the THz regime and their application for 3D printed THz optics,” J. Infrared Millim. Terahertz Waves 35(12), 993–997 (2014).
[Crossref]

Fischer, B. M.

S. Wietzke, C. Jansen, M. Reuter, T. Jung, D. Kraft, S. Chatterjee, B. M. Fischer, and M. Koch, “Terahertz spectroscopy on polymers: A review of morphological studies,” J. Mol. Struct. 1006(1–3), 41–51 (2011).
[Crossref]

Freese, W.

Gaquiere, Ch.

N. Dyakonova, A. El Fatimy, J. Łusakowski, W. Knap, M. I. Dyakonov, M. A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Y. Roelens, Ch. Gaquiere, D. Theron, and A. Cappy, “Room temperature terahertz emission from nanometer field-effect transistors,” Appl. Phys. Lett. 88(14), 141906 (2006).
[Crossref]

Giffard, B.

Gómez-Reino, C.

Z. Jaroszewicz, A. Kolodziejczyk, M. Sypek, and C. Gómez-Reino, “Non-paraxial analytical solution for the generation of focal curves,” J. Mod. Opt. 43(3), 617–637 (1996).
[Crossref]

Górecki, M.

M. Sypek, C. Prokopowicz, and M. Górecki, “Image multiplying and high frequency oscillations effects in the Fresnel region light propagation simulation,” Opt. Eng. 42(11), 3158–3164 (2003).
[Crossref]

Grynberg, M.

M. Sakowicz, J. Łusakowski, K. Karpierz, M. Grynberg, W. Knap, and W. Gwarek, “Polarization sensitive detection of 100 GHz radiation by high mobility field-effect transistors,” J. Appl. Phys. 104(2), 024519 (2008).
[Crossref]

Gu, P.

X. Yan and P. Gu, “A review of rapid prototyping technologies and systems,” Comput. Aided Des. 28(4), 307–318 (1996).
[Crossref]

Gwarek, W.

M. Sakowicz, J. Łusakowski, K. Karpierz, M. Grynberg, W. Knap, and W. Gwarek, “Polarization sensitive detection of 100 GHz radiation by high mobility field-effect transistors,” J. Appl. Phys. 104(2), 024519 (2008).
[Crossref]

Han, R.

E. Seok, D. Shim, C. Mao, R. Han, S. Sankaran, C. Cao, W. Knap, and K. O. Kenneth, “Progress and challenges towards terahertz CMOS integrated circuits,” IEEE J. Solid-St. Circulation 45(8), 1554–1564 (2010).

Handa, H.

Y. M. Meziani, H. Handa, W. Knap, T. Otsuji, E. Sano, V. V. Popov, G. M. Tsymbalov, D. Coquillat, and F. Teppe, “Room temperature terahertz emission from grating coupled two-dimensional plasmons,” Appl. Phys. Lett. 92(20), 201108 (2008).
[Crossref]

Jahns, J.

Jansen, C.

S. Wietzke, C. Jansen, M. Reuter, T. Jung, D. Kraft, S. Chatterjee, B. M. Fischer, and M. Koch, “Terahertz spectroscopy on polymers: A review of morphological studies,” J. Mol. Struct. 1006(1–3), 41–51 (2011).
[Crossref]

Jaroszewicz, Z.

Z. Jaroszewicz, A. Kolodziejczyk, M. Sypek, and C. Gómez-Reino, “Non-paraxial analytical solution for the generation of focal curves,” J. Mod. Opt. 43(3), 617–637 (1996).
[Crossref]

Jastrzebski, C.

J. Bomba, A. Sobczyk, A. Siemion, K. Świtkowski, C. Jastrzębski, A. Siemion, J. Suszek, and M. Sypek, “The time domain spectroscopy goniometric setup characterization by the utilization of the plastic diffraction grating,” Photonics Lett. Pol. 4(3), 121–123 (2012).
[Crossref]

Jofre, L.

N. Llombart, C. Lee, M. Alonso-delPino, G. Chattopadhyay, C. J. Kubiak, L. Jofre, and I. Mehdi, and Student Member, “Silicon micromachined lens antenna for THz integrated heterodyne arrays,” IEEE Trans. Terahertz Sci. Technol. 3(5), 515–523 (2013).
[Crossref]

Jung, T.

S. Wietzke, C. Jansen, M. Reuter, T. Jung, D. Kraft, S. Chatterjee, B. M. Fischer, and M. Koch, “Terahertz spectroscopy on polymers: A review of morphological studies,” J. Mol. Struct. 1006(1–3), 41–51 (2011).
[Crossref]

Karatsu, K.

T. Nitta, M. Naruse, Y. Sekimoto, K. Mitsui, N. Okada, K. Karatsu, M. Sekine, H. Matsuo, T. Noguchi, Y. Uzawa, M. Seta, and N. Nakai, “Beam pattern measurements of millimeter-wave kinetic inductance detector camera with direct machined silicon lens array,” IEEE Trans. Terahertz Sci. Technol. 3(1), 56–62 (2013).
[Crossref]

Karpierz, K.

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: physics and first imaging applications,” J. Infrared Millim. Te. 30(12), 1319–1337 (2009).

M. Sakowicz, J. Łusakowski, K. Karpierz, M. Grynberg, W. Knap, and W. Gwarek, “Polarization sensitive detection of 100 GHz radiation by high mobility field-effect transistors,” J. Appl. Phys. 104(2), 024519 (2008).
[Crossref]

Kasalynas, I.

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: physics and first imaging applications,” J. Infrared Millim. Te. 30(12), 1319–1337 (2009).

Kašalynas, I.

S. Nadar, H. Videlier, D. Coquillat, F. Teppe, M. Sakowicz, N. Dyakonova, W. Knap, D. Seliuta, I. Kašalynas, and G. Valušis, “Room temperature imaging at 1.63 and 2.54 with field effect transistor,” J. Appl. Phys. 108(5), 054508 (2010).
[Crossref]

Kenneth, K. O.

E. Seok, D. Shim, C. Mao, R. Han, S. Sankaran, C. Cao, W. Knap, and K. O. Kenneth, “Progress and challenges towards terahertz CMOS integrated circuits,” IEEE J. Solid-St. Circulation 45(8), 1554–1564 (2010).

Knap, W.

D. Coquillat, J. Marczewski, P. Kopyt, N. Dyakonova, B. Giffard, and W. Knap, “Improvement of terahertz field effect transistor detectors by substrate thinning and radiation losses reduction,” Opt. Express 24(1), 272–281 (2016).
[Crossref] [PubMed]

J. Suszek, A. Siemion, M. S. Bieda, N. Błocki, D. Coquillat, G. Cywiński, E. Czerwińska, M. Doch, A. Kowalczyk, N. Palka, A. Sobczyk, P. Zagrajek, M. Zaremba, A. Kolodziejczyk, W. Knap, and M. Sypek, “3-D-printed flat optics for THz linear scanners,” IEEE Trans. Terahertz Sci. Technol. 5(2), 314–316 (2015).
[Crossref]

W. Knap, S. Rumyantsev, M. S. Vitiello, D. Coquillat, S. Blin, N. Dyakonova, M. Shur, F. Teppe, A. Tredicucci, and T. Nagatsuma, “Nanometer size field effect transistors for terahertz detectors,” Nanotechnology 24(21), 214002 (2013).
[Crossref] [PubMed]

S. Nadar, H. Videlier, D. Coquillat, F. Teppe, M. Sakowicz, N. Dyakonova, W. Knap, D. Seliuta, I. Kašalynas, and G. Valušis, “Room temperature imaging at 1.63 and 2.54 with field effect transistor,” J. Appl. Phys. 108(5), 054508 (2010).
[Crossref]

E. Seok, D. Shim, C. Mao, R. Han, S. Sankaran, C. Cao, W. Knap, and K. O. Kenneth, “Progress and challenges towards terahertz CMOS integrated circuits,” IEEE J. Solid-St. Circulation 45(8), 1554–1564 (2010).

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: physics and first imaging applications,” J. Infrared Millim. Te. 30(12), 1319–1337 (2009).

Y. M. Meziani, H. Handa, W. Knap, T. Otsuji, E. Sano, V. V. Popov, G. M. Tsymbalov, D. Coquillat, and F. Teppe, “Room temperature terahertz emission from grating coupled two-dimensional plasmons,” Appl. Phys. Lett. 92(20), 201108 (2008).
[Crossref]

M. Sakowicz, J. Łusakowski, K. Karpierz, M. Grynberg, W. Knap, and W. Gwarek, “Polarization sensitive detection of 100 GHz radiation by high mobility field-effect transistors,” J. Appl. Phys. 104(2), 024519 (2008).
[Crossref]

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer Transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[Crossref]

N. Dyakonova, A. El Fatimy, J. Łusakowski, W. Knap, M. I. Dyakonov, M. A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Y. Roelens, Ch. Gaquiere, D. Theron, and A. Cappy, “Room temperature terahertz emission from nanometer field-effect transistors,” Appl. Phys. Lett. 88(14), 141906 (2006).
[Crossref]

N. Dyakonova, F. Teppe, J. Łusakowski, W. Knap, M. Levinshtein, A. P. Dmitriev, M. S. Shur, S. Bollaert, and A. Cappy, “Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors,” J. Appl. Phys. 97(11), 114313 (2005).
[Crossref]

C. Skierbiszewski, K. Dybko, W. Knap, M. Siekacz, W. Krupczyński, G. Nowak, M. Bockowski, J. Łusakowski, Z. Wasilewski, D. K. Maude, T. Suski, and S. Porowski, “High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy,” Appl. Phys. Lett. 86(10), 102106 (2005).
[Crossref]

W. Knap, J. Łusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, and M. S. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84(13), 2331 (2004).
[Crossref]

Koch, M.

S. F. Busch, M. Weidenbach, M. Fey, F. Schäfer, T. Probst, and M. Koch, “Optical properties of 3D printable plastics in the THz regime and their application for 3D printed THz optics,” J. Infrared Millim. Terahertz Waves 35(12), 993–997 (2014).
[Crossref]

S. Wietzke, C. Jansen, M. Reuter, T. Jung, D. Kraft, S. Chatterjee, B. M. Fischer, and M. Koch, “Terahertz spectroscopy on polymers: A review of morphological studies,” J. Mol. Struct. 1006(1–3), 41–51 (2011).
[Crossref]

Kolodziejczyk, A.

J. Suszek, A. Siemion, M. S. Bieda, N. Błocki, D. Coquillat, G. Cywiński, E. Czerwińska, M. Doch, A. Kowalczyk, N. Palka, A. Sobczyk, P. Zagrajek, M. Zaremba, A. Kolodziejczyk, W. Knap, and M. Sypek, “3-D-printed flat optics for THz linear scanners,” IEEE Trans. Terahertz Sci. Technol. 5(2), 314–316 (2015).
[Crossref]

M. Sypek, J.-L. Coutaz, A. Kolodziejczyk, M. Makowski, and J. Suszek, “Aberrations of the large aperture attenuating THz lenses,” Proc. SPIE 8261, 826110 (2012).
[Crossref]

Z. Jaroszewicz, A. Kolodziejczyk, M. Sypek, and C. Gómez-Reino, “Non-paraxial analytical solution for the generation of focal curves,” J. Mod. Opt. 43(3), 617–637 (1996).
[Crossref]

Kopyt, P.

Kowalczyk, A.

J. Suszek, A. Siemion, M. S. Bieda, N. Błocki, D. Coquillat, G. Cywiński, E. Czerwińska, M. Doch, A. Kowalczyk, N. Palka, A. Sobczyk, P. Zagrajek, M. Zaremba, A. Kolodziejczyk, W. Knap, and M. Sypek, “3-D-printed flat optics for THz linear scanners,” IEEE Trans. Terahertz Sci. Technol. 5(2), 314–316 (2015).
[Crossref]

Kraft, D.

S. Wietzke, C. Jansen, M. Reuter, T. Jung, D. Kraft, S. Chatterjee, B. M. Fischer, and M. Koch, “Terahertz spectroscopy on polymers: A review of morphological studies,” J. Mol. Struct. 1006(1–3), 41–51 (2011).
[Crossref]

Krupczynski, W.

C. Skierbiszewski, K. Dybko, W. Knap, M. Siekacz, W. Krupczyński, G. Nowak, M. Bockowski, J. Łusakowski, Z. Wasilewski, D. K. Maude, T. Suski, and S. Porowski, “High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy,” Appl. Phys. Lett. 86(10), 102106 (2005).
[Crossref]

Kubiak, C. J.

N. Llombart, C. Lee, M. Alonso-delPino, G. Chattopadhyay, C. J. Kubiak, L. Jofre, and I. Mehdi, and Student Member, “Silicon micromachined lens antenna for THz integrated heterodyne arrays,” IEEE Trans. Terahertz Sci. Technol. 3(5), 515–523 (2013).
[Crossref]

Lee, C.

N. Llombart, C. Lee, M. Alonso-delPino, G. Chattopadhyay, C. J. Kubiak, L. Jofre, and I. Mehdi, and Student Member, “Silicon micromachined lens antenna for THz integrated heterodyne arrays,” IEEE Trans. Terahertz Sci. Technol. 3(5), 515–523 (2013).
[Crossref]

Levinshtein, M.

N. Dyakonova, F. Teppe, J. Łusakowski, W. Knap, M. Levinshtein, A. P. Dmitriev, M. S. Shur, S. Bollaert, and A. Cappy, “Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors,” J. Appl. Phys. 97(11), 114313 (2005).
[Crossref]

Lisauskas, A.

E. Ojefors, U. Pfeiffer, A. Lisauskas, and H. Roskos, “0.65 THz focal-plane array in a quarter-micron CMOS process technology,” IEEE J. Solid-St. Circulation 44(7), 1968–1976 (2009).

Livreri, P.

A. Tomasino, A. Parisi, S. Stivala, P. Livreri, A. C. Cino, A. C. Busacca, M. Peccianti, and R. Morandotti, “Wideband THz time domain spectroscopy based on optical rectification and electro-optic sampling,” Sci. Rep. 3, 3116 (2013).
[Crossref] [PubMed]

Llombart, N.

N. Llombart, C. Lee, M. Alonso-delPino, G. Chattopadhyay, C. J. Kubiak, L. Jofre, and I. Mehdi, and Student Member, “Silicon micromachined lens antenna for THz integrated heterodyne arrays,” IEEE Trans. Terahertz Sci. Technol. 3(5), 515–523 (2013).
[Crossref]

Lusakowski, J.

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: physics and first imaging applications,” J. Infrared Millim. Te. 30(12), 1319–1337 (2009).

M. Sakowicz, J. Łusakowski, K. Karpierz, M. Grynberg, W. Knap, and W. Gwarek, “Polarization sensitive detection of 100 GHz radiation by high mobility field-effect transistors,” J. Appl. Phys. 104(2), 024519 (2008).
[Crossref]

N. Dyakonova, A. El Fatimy, J. Łusakowski, W. Knap, M. I. Dyakonov, M. A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Y. Roelens, Ch. Gaquiere, D. Theron, and A. Cappy, “Room temperature terahertz emission from nanometer field-effect transistors,” Appl. Phys. Lett. 88(14), 141906 (2006).
[Crossref]

N. Dyakonova, F. Teppe, J. Łusakowski, W. Knap, M. Levinshtein, A. P. Dmitriev, M. S. Shur, S. Bollaert, and A. Cappy, “Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors,” J. Appl. Phys. 97(11), 114313 (2005).
[Crossref]

C. Skierbiszewski, K. Dybko, W. Knap, M. Siekacz, W. Krupczyński, G. Nowak, M. Bockowski, J. Łusakowski, Z. Wasilewski, D. K. Maude, T. Suski, and S. Porowski, “High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy,” Appl. Phys. Lett. 86(10), 102106 (2005).
[Crossref]

W. Knap, J. Łusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, and M. S. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84(13), 2331 (2004).
[Crossref]

Makowski, M.

M. Sypek, J.-L. Coutaz, A. Kolodziejczyk, M. Makowski, and J. Suszek, “Aberrations of the large aperture attenuating THz lenses,” Proc. SPIE 8261, 826110 (2012).
[Crossref]

Mann, C.

C. Mann, “Practical challengers for the commercialization of terahertz electronics,” in IEEE/MTT-S International Microwaves Symposium Digest (IEEE, 2007), pp. 1705–1708.

Mao, C.

E. Seok, D. Shim, C. Mao, R. Han, S. Sankaran, C. Cao, W. Knap, and K. O. Kenneth, “Progress and challenges towards terahertz CMOS integrated circuits,” IEEE J. Solid-St. Circulation 45(8), 1554–1564 (2010).

Marczewski, J.

Matsuo, H.

T. Nitta, M. Naruse, Y. Sekimoto, K. Mitsui, N. Okada, K. Karatsu, M. Sekine, H. Matsuo, T. Noguchi, Y. Uzawa, M. Seta, and N. Nakai, “Beam pattern measurements of millimeter-wave kinetic inductance detector camera with direct machined silicon lens array,” IEEE Trans. Terahertz Sci. Technol. 3(1), 56–62 (2013).
[Crossref]

Matthäus, G.

Maude, D. K.

C. Skierbiszewski, K. Dybko, W. Knap, M. Siekacz, W. Krupczyński, G. Nowak, M. Bockowski, J. Łusakowski, Z. Wasilewski, D. K. Maude, T. Suski, and S. Porowski, “High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy,” Appl. Phys. Lett. 86(10), 102106 (2005).
[Crossref]

Mehdi, I.

N. Llombart, C. Lee, M. Alonso-delPino, G. Chattopadhyay, C. J. Kubiak, L. Jofre, and I. Mehdi, and Student Member, “Silicon micromachined lens antenna for THz integrated heterodyne arrays,” IEEE Trans. Terahertz Sci. Technol. 3(5), 515–523 (2013).
[Crossref]

Meziani, Y. M.

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: physics and first imaging applications,” J. Infrared Millim. Te. 30(12), 1319–1337 (2009).

Y. M. Meziani, H. Handa, W. Knap, T. Otsuji, E. Sano, V. V. Popov, G. M. Tsymbalov, D. Coquillat, and F. Teppe, “Room temperature terahertz emission from grating coupled two-dimensional plasmons,” Appl. Phys. Lett. 92(20), 201108 (2008).
[Crossref]

Mitsui, K.

T. Nitta, M. Naruse, Y. Sekimoto, K. Mitsui, N. Okada, K. Karatsu, M. Sekine, H. Matsuo, T. Noguchi, Y. Uzawa, M. Seta, and N. Nakai, “Beam pattern measurements of millimeter-wave kinetic inductance detector camera with direct machined silicon lens array,” IEEE Trans. Terahertz Sci. Technol. 3(1), 56–62 (2013).
[Crossref]

Morandotti, R.

A. Tomasino, A. Parisi, S. Stivala, P. Livreri, A. C. Cino, A. C. Busacca, M. Peccianti, and R. Morandotti, “Wideband THz time domain spectroscopy based on optical rectification and electro-optic sampling,” Sci. Rep. 3, 3116 (2013).
[Crossref] [PubMed]

Morvan, E.

N. Dyakonova, A. El Fatimy, J. Łusakowski, W. Knap, M. I. Dyakonov, M. A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Y. Roelens, Ch. Gaquiere, D. Theron, and A. Cappy, “Room temperature terahertz emission from nanometer field-effect transistors,” Appl. Phys. Lett. 88(14), 141906 (2006).
[Crossref]

Müller, R.

Nadar, S.

S. Nadar, H. Videlier, D. Coquillat, F. Teppe, M. Sakowicz, N. Dyakonova, W. Knap, D. Seliuta, I. Kašalynas, and G. Valušis, “Room temperature imaging at 1.63 and 2.54 with field effect transistor,” J. Appl. Phys. 108(5), 054508 (2010).
[Crossref]

Nagatsuma, T.

W. Knap, S. Rumyantsev, M. S. Vitiello, D. Coquillat, S. Blin, N. Dyakonova, M. Shur, F. Teppe, A. Tredicucci, and T. Nagatsuma, “Nanometer size field effect transistors for terahertz detectors,” Nanotechnology 24(21), 214002 (2013).
[Crossref] [PubMed]

Nakai, N.

T. Nitta, M. Naruse, Y. Sekimoto, K. Mitsui, N. Okada, K. Karatsu, M. Sekine, H. Matsuo, T. Noguchi, Y. Uzawa, M. Seta, and N. Nakai, “Beam pattern measurements of millimeter-wave kinetic inductance detector camera with direct machined silicon lens array,” IEEE Trans. Terahertz Sci. Technol. 3(1), 56–62 (2013).
[Crossref]

Naruse, M.

T. Nitta, M. Naruse, Y. Sekimoto, K. Mitsui, N. Okada, K. Karatsu, M. Sekine, H. Matsuo, T. Noguchi, Y. Uzawa, M. Seta, and N. Nakai, “Beam pattern measurements of millimeter-wave kinetic inductance detector camera with direct machined silicon lens array,” IEEE Trans. Terahertz Sci. Technol. 3(1), 56–62 (2013).
[Crossref]

Nitta, T.

T. Nitta, M. Naruse, Y. Sekimoto, K. Mitsui, N. Okada, K. Karatsu, M. Sekine, H. Matsuo, T. Noguchi, Y. Uzawa, M. Seta, and N. Nakai, “Beam pattern measurements of millimeter-wave kinetic inductance detector camera with direct machined silicon lens array,” IEEE Trans. Terahertz Sci. Technol. 3(1), 56–62 (2013).
[Crossref]

Noguchi, T.

T. Nitta, M. Naruse, Y. Sekimoto, K. Mitsui, N. Okada, K. Karatsu, M. Sekine, H. Matsuo, T. Noguchi, Y. Uzawa, M. Seta, and N. Nakai, “Beam pattern measurements of millimeter-wave kinetic inductance detector camera with direct machined silicon lens array,” IEEE Trans. Terahertz Sci. Technol. 3(1), 56–62 (2013).
[Crossref]

Nolte, S.

Notni, G.

Nowak, G.

C. Skierbiszewski, K. Dybko, W. Knap, M. Siekacz, W. Krupczyński, G. Nowak, M. Bockowski, J. Łusakowski, Z. Wasilewski, D. K. Maude, T. Suski, and S. Porowski, “High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy,” Appl. Phys. Lett. 86(10), 102106 (2005).
[Crossref]

Ojefors, E.

E. Ojefors, U. Pfeiffer, A. Lisauskas, and H. Roskos, “0.65 THz focal-plane array in a quarter-micron CMOS process technology,” IEEE J. Solid-St. Circulation 44(7), 1968–1976 (2009).

Okada, N.

T. Nitta, M. Naruse, Y. Sekimoto, K. Mitsui, N. Okada, K. Karatsu, M. Sekine, H. Matsuo, T. Noguchi, Y. Uzawa, M. Seta, and N. Nakai, “Beam pattern measurements of millimeter-wave kinetic inductance detector camera with direct machined silicon lens array,” IEEE Trans. Terahertz Sci. Technol. 3(1), 56–62 (2013).
[Crossref]

Otsuji, T.

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: physics and first imaging applications,” J. Infrared Millim. Te. 30(12), 1319–1337 (2009).

Y. M. Meziani, H. Handa, W. Knap, T. Otsuji, E. Sano, V. V. Popov, G. M. Tsymbalov, D. Coquillat, and F. Teppe, “Room temperature terahertz emission from grating coupled two-dimensional plasmons,” Appl. Phys. Lett. 92(20), 201108 (2008).
[Crossref]

Palka, N.

J. Suszek, A. Siemion, M. S. Bieda, N. Błocki, D. Coquillat, G. Cywiński, E. Czerwińska, M. Doch, A. Kowalczyk, N. Palka, A. Sobczyk, P. Zagrajek, M. Zaremba, A. Kolodziejczyk, W. Knap, and M. Sypek, “3-D-printed flat optics for THz linear scanners,” IEEE Trans. Terahertz Sci. Technol. 5(2), 314–316 (2015).
[Crossref]

T. Trzcinski, N. Pałka, and M. Szustakowski, “THz spectroscopy of explosive-related simulants and oxidizers,” in Bull. Pol. Acad. Sci. Tech. (Paris) 59(4), 445–447 (2011).

Parenty, T.

W. Knap, J. Łusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, and M. S. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84(13), 2331 (2004).
[Crossref]

Parisi, A.

A. Tomasino, A. Parisi, S. Stivala, P. Livreri, A. C. Cino, A. C. Busacca, M. Peccianti, and R. Morandotti, “Wideband THz time domain spectroscopy based on optical rectification and electro-optic sampling,” Sci. Rep. 3, 3116 (2013).
[Crossref] [PubMed]

Peccianti, M.

A. Tomasino, A. Parisi, S. Stivala, P. Livreri, A. C. Cino, A. C. Busacca, M. Peccianti, and R. Morandotti, “Wideband THz time domain spectroscopy based on optical rectification and electro-optic sampling,” Sci. Rep. 3, 3116 (2013).
[Crossref] [PubMed]

Pfeiffer, U.

E. Ojefors, U. Pfeiffer, A. Lisauskas, and H. Roskos, “0.65 THz focal-plane array in a quarter-micron CMOS process technology,” IEEE J. Solid-St. Circulation 44(7), 1968–1976 (2009).

Poisson, M. A.

N. Dyakonova, A. El Fatimy, J. Łusakowski, W. Knap, M. I. Dyakonov, M. A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Y. Roelens, Ch. Gaquiere, D. Theron, and A. Cappy, “Room temperature terahertz emission from nanometer field-effect transistors,” Appl. Phys. Lett. 88(14), 141906 (2006).
[Crossref]

Popov, V. V.

Y. M. Meziani, H. Handa, W. Knap, T. Otsuji, E. Sano, V. V. Popov, G. M. Tsymbalov, D. Coquillat, and F. Teppe, “Room temperature terahertz emission from grating coupled two-dimensional plasmons,” Appl. Phys. Lett. 92(20), 201108 (2008).
[Crossref]

W. Knap, J. Łusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, and M. S. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84(13), 2331 (2004).
[Crossref]

Porowski, S.

C. Skierbiszewski, K. Dybko, W. Knap, M. Siekacz, W. Krupczyński, G. Nowak, M. Bockowski, J. Łusakowski, Z. Wasilewski, D. K. Maude, T. Suski, and S. Porowski, “High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy,” Appl. Phys. Lett. 86(10), 102106 (2005).
[Crossref]

Pradarutti, B.

Probst, T.

S. F. Busch, M. Weidenbach, M. Fey, F. Schäfer, T. Probst, and M. Koch, “Optical properties of 3D printable plastics in the THz regime and their application for 3D printed THz optics,” J. Infrared Millim. Terahertz Waves 35(12), 993–997 (2014).
[Crossref]

Prokopowicz, C.

M. Sypek, C. Prokopowicz, and M. Górecki, “Image multiplying and high frequency oscillations effects in the Fresnel region light propagation simulation,” Opt. Eng. 42(11), 3158–3164 (2003).
[Crossref]

Reissman, T.

F. Zhou, W. Cao, B. Dong, T. Reissman, W. Zhang, and C. Sun, “Additive manufacturing of 3D terahertz gradient-refractive index lens,” Adv. Opt. Mater. 4(7), 1034–1040 (2016).
[Crossref]

Reuter, M.

S. Wietzke, C. Jansen, M. Reuter, T. Jung, D. Kraft, S. Chatterjee, B. M. Fischer, and M. Koch, “Terahertz spectroscopy on polymers: A review of morphological studies,” J. Mol. Struct. 1006(1–3), 41–51 (2011).
[Crossref]

Riehemann, S.

Ritchie, D. A.

Roelens, Y.

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer Transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[Crossref]

N. Dyakonova, A. El Fatimy, J. Łusakowski, W. Knap, M. I. Dyakonov, M. A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Y. Roelens, Ch. Gaquiere, D. Theron, and A. Cappy, “Room temperature terahertz emission from nanometer field-effect transistors,” Appl. Phys. Lett. 88(14), 141906 (2006).
[Crossref]

Roskos, H.

E. Ojefors, U. Pfeiffer, A. Lisauskas, and H. Roskos, “0.65 THz focal-plane array in a quarter-micron CMOS process technology,” IEEE J. Solid-St. Circulation 44(7), 1968–1976 (2009).

Rumyantsev, S.

W. Knap, S. Rumyantsev, M. S. Vitiello, D. Coquillat, S. Blin, N. Dyakonova, M. Shur, F. Teppe, A. Tredicucci, and T. Nagatsuma, “Nanometer size field effect transistors for terahertz detectors,” Nanotechnology 24(21), 214002 (2013).
[Crossref] [PubMed]

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer Transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[Crossref]

Sakowicz, M.

S. Nadar, H. Videlier, D. Coquillat, F. Teppe, M. Sakowicz, N. Dyakonova, W. Knap, D. Seliuta, I. Kašalynas, and G. Valušis, “Room temperature imaging at 1.63 and 2.54 with field effect transistor,” J. Appl. Phys. 108(5), 054508 (2010).
[Crossref]

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: physics and first imaging applications,” J. Infrared Millim. Te. 30(12), 1319–1337 (2009).

M. Sakowicz, J. Łusakowski, K. Karpierz, M. Grynberg, W. Knap, and W. Gwarek, “Polarization sensitive detection of 100 GHz radiation by high mobility field-effect transistors,” J. Appl. Phys. 104(2), 024519 (2008).
[Crossref]

Sankaran, S.

E. Seok, D. Shim, C. Mao, R. Han, S. Sankaran, C. Cao, W. Knap, and K. O. Kenneth, “Progress and challenges towards terahertz CMOS integrated circuits,” IEEE J. Solid-St. Circulation 45(8), 1554–1564 (2010).

Sano, E.

Y. M. Meziani, H. Handa, W. Knap, T. Otsuji, E. Sano, V. V. Popov, G. M. Tsymbalov, D. Coquillat, and F. Teppe, “Room temperature terahertz emission from grating coupled two-dimensional plasmons,” Appl. Phys. Lett. 92(20), 201108 (2008).
[Crossref]

Schäfer, F.

S. F. Busch, M. Weidenbach, M. Fey, F. Schäfer, T. Probst, and M. Koch, “Optical properties of 3D printable plastics in the THz regime and their application for 3D printed THz optics,” J. Infrared Millim. Terahertz Waves 35(12), 993–997 (2014).
[Crossref]

Sekimoto, Y.

T. Nitta, M. Naruse, Y. Sekimoto, K. Mitsui, N. Okada, K. Karatsu, M. Sekine, H. Matsuo, T. Noguchi, Y. Uzawa, M. Seta, and N. Nakai, “Beam pattern measurements of millimeter-wave kinetic inductance detector camera with direct machined silicon lens array,” IEEE Trans. Terahertz Sci. Technol. 3(1), 56–62 (2013).
[Crossref]

Sekine, M.

T. Nitta, M. Naruse, Y. Sekimoto, K. Mitsui, N. Okada, K. Karatsu, M. Sekine, H. Matsuo, T. Noguchi, Y. Uzawa, M. Seta, and N. Nakai, “Beam pattern measurements of millimeter-wave kinetic inductance detector camera with direct machined silicon lens array,” IEEE Trans. Terahertz Sci. Technol. 3(1), 56–62 (2013).
[Crossref]

Seliuta, D.

S. Nadar, H. Videlier, D. Coquillat, F. Teppe, M. Sakowicz, N. Dyakonova, W. Knap, D. Seliuta, I. Kašalynas, and G. Valušis, “Room temperature imaging at 1.63 and 2.54 with field effect transistor,” J. Appl. Phys. 108(5), 054508 (2010).
[Crossref]

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: physics and first imaging applications,” J. Infrared Millim. Te. 30(12), 1319–1337 (2009).

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer Transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[Crossref]

Seok, E.

E. Seok, D. Shim, C. Mao, R. Han, S. Sankaran, C. Cao, W. Knap, and K. O. Kenneth, “Progress and challenges towards terahertz CMOS integrated circuits,” IEEE J. Solid-St. Circulation 45(8), 1554–1564 (2010).

Seta, M.

T. Nitta, M. Naruse, Y. Sekimoto, K. Mitsui, N. Okada, K. Karatsu, M. Sekine, H. Matsuo, T. Noguchi, Y. Uzawa, M. Seta, and N. Nakai, “Beam pattern measurements of millimeter-wave kinetic inductance detector camera with direct machined silicon lens array,” IEEE Trans. Terahertz Sci. Technol. 3(1), 56–62 (2013).
[Crossref]

Shchepetov, A.

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer Transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[Crossref]

N. Dyakonova, A. El Fatimy, J. Łusakowski, W. Knap, M. I. Dyakonov, M. A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Y. Roelens, Ch. Gaquiere, D. Theron, and A. Cappy, “Room temperature terahertz emission from nanometer field-effect transistors,” Appl. Phys. Lett. 88(14), 141906 (2006).
[Crossref]

Shim, D.

E. Seok, D. Shim, C. Mao, R. Han, S. Sankaran, C. Cao, W. Knap, and K. O. Kenneth, “Progress and challenges towards terahertz CMOS integrated circuits,” IEEE J. Solid-St. Circulation 45(8), 1554–1564 (2010).

Shur, M.

W. Knap, S. Rumyantsev, M. S. Vitiello, D. Coquillat, S. Blin, N. Dyakonova, M. Shur, F. Teppe, A. Tredicucci, and T. Nagatsuma, “Nanometer size field effect transistors for terahertz detectors,” Nanotechnology 24(21), 214002 (2013).
[Crossref] [PubMed]

M. Dyakonov and M. Shur, “Shallow water analogy for a ballistic field effect transistor: new mechanism of plasma wave generation by dc current,” Phys. Rev. Lett. 71(15), 2465–2468 (1993).
[Crossref] [PubMed]

Shur, M. S.

N. Dyakonova, F. Teppe, J. Łusakowski, W. Knap, M. Levinshtein, A. P. Dmitriev, M. S. Shur, S. Bollaert, and A. Cappy, “Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors,” J. Appl. Phys. 97(11), 114313 (2005).
[Crossref]

W. Knap, J. Łusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, and M. S. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84(13), 2331 (2004).
[Crossref]

M. I. Dyakonov and M. S. Shur, “Plasma wave electronics: novel terahertz devices using two dimensional electron fluid,” IEEE Trans. Electron Dev. 43(10), 1640–1645 (1996).
[Crossref]

Siekacz, M.

C. Skierbiszewski, K. Dybko, W. Knap, M. Siekacz, W. Krupczyński, G. Nowak, M. Bockowski, J. Łusakowski, Z. Wasilewski, D. K. Maude, T. Suski, and S. Porowski, “High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy,” Appl. Phys. Lett. 86(10), 102106 (2005).
[Crossref]

Siemion, A.

J. Suszek, A. Siemion, M. S. Bieda, N. Błocki, D. Coquillat, G. Cywiński, E. Czerwińska, M. Doch, A. Kowalczyk, N. Palka, A. Sobczyk, P. Zagrajek, M. Zaremba, A. Kolodziejczyk, W. Knap, and M. Sypek, “3-D-printed flat optics for THz linear scanners,” IEEE Trans. Terahertz Sci. Technol. 5(2), 314–316 (2015).
[Crossref]

J. Bomba, A. Sobczyk, A. Siemion, K. Świtkowski, C. Jastrzębski, A. Siemion, J. Suszek, and M. Sypek, “The time domain spectroscopy goniometric setup characterization by the utilization of the plastic diffraction grating,” Photonics Lett. Pol. 4(3), 121–123 (2012).
[Crossref]

J. Bomba, A. Sobczyk, A. Siemion, K. Świtkowski, C. Jastrzębski, A. Siemion, J. Suszek, and M. Sypek, “The time domain spectroscopy goniometric setup characterization by the utilization of the plastic diffraction grating,” Photonics Lett. Pol. 4(3), 121–123 (2012).
[Crossref]

Skierbiszewski, C.

C. Skierbiszewski, K. Dybko, W. Knap, M. Siekacz, W. Krupczyński, G. Nowak, M. Bockowski, J. Łusakowski, Z. Wasilewski, D. K. Maude, T. Suski, and S. Porowski, “High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy,” Appl. Phys. Lett. 86(10), 102106 (2005).
[Crossref]

Sobczyk, A.

J. Suszek, A. Siemion, M. S. Bieda, N. Błocki, D. Coquillat, G. Cywiński, E. Czerwińska, M. Doch, A. Kowalczyk, N. Palka, A. Sobczyk, P. Zagrajek, M. Zaremba, A. Kolodziejczyk, W. Knap, and M. Sypek, “3-D-printed flat optics for THz linear scanners,” IEEE Trans. Terahertz Sci. Technol. 5(2), 314–316 (2015).
[Crossref]

J. Bomba, A. Sobczyk, A. Siemion, K. Świtkowski, C. Jastrzębski, A. Siemion, J. Suszek, and M. Sypek, “The time domain spectroscopy goniometric setup characterization by the utilization of the plastic diffraction grating,” Photonics Lett. Pol. 4(3), 121–123 (2012).
[Crossref]

Stivala, S.

A. Tomasino, A. Parisi, S. Stivala, P. Livreri, A. C. Cino, A. C. Busacca, M. Peccianti, and R. Morandotti, “Wideband THz time domain spectroscopy based on optical rectification and electro-optic sampling,” Sci. Rep. 3, 3116 (2013).
[Crossref] [PubMed]

Sun, C.

F. Zhou, W. Cao, B. Dong, T. Reissman, W. Zhang, and C. Sun, “Additive manufacturing of 3D terahertz gradient-refractive index lens,” Adv. Opt. Mater. 4(7), 1034–1040 (2016).
[Crossref]

Suski, T.

C. Skierbiszewski, K. Dybko, W. Knap, M. Siekacz, W. Krupczyński, G. Nowak, M. Bockowski, J. Łusakowski, Z. Wasilewski, D. K. Maude, T. Suski, and S. Porowski, “High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy,” Appl. Phys. Lett. 86(10), 102106 (2005).
[Crossref]

Suszek, J.

J. Suszek, A. Siemion, M. S. Bieda, N. Błocki, D. Coquillat, G. Cywiński, E. Czerwińska, M. Doch, A. Kowalczyk, N. Palka, A. Sobczyk, P. Zagrajek, M. Zaremba, A. Kolodziejczyk, W. Knap, and M. Sypek, “3-D-printed flat optics for THz linear scanners,” IEEE Trans. Terahertz Sci. Technol. 5(2), 314–316 (2015).
[Crossref]

M. Sypek, J.-L. Coutaz, A. Kolodziejczyk, M. Makowski, and J. Suszek, “Aberrations of the large aperture attenuating THz lenses,” Proc. SPIE 8261, 826110 (2012).
[Crossref]

J. Bomba, A. Sobczyk, A. Siemion, K. Świtkowski, C. Jastrzębski, A. Siemion, J. Suszek, and M. Sypek, “The time domain spectroscopy goniometric setup characterization by the utilization of the plastic diffraction grating,” Photonics Lett. Pol. 4(3), 121–123 (2012).
[Crossref]

Switkowski, K.

J. Bomba, A. Sobczyk, A. Siemion, K. Świtkowski, C. Jastrzębski, A. Siemion, J. Suszek, and M. Sypek, “The time domain spectroscopy goniometric setup characterization by the utilization of the plastic diffraction grating,” Photonics Lett. Pol. 4(3), 121–123 (2012).
[Crossref]

Sypek, M.

J. Suszek, A. Siemion, M. S. Bieda, N. Błocki, D. Coquillat, G. Cywiński, E. Czerwińska, M. Doch, A. Kowalczyk, N. Palka, A. Sobczyk, P. Zagrajek, M. Zaremba, A. Kolodziejczyk, W. Knap, and M. Sypek, “3-D-printed flat optics for THz linear scanners,” IEEE Trans. Terahertz Sci. Technol. 5(2), 314–316 (2015).
[Crossref]

J. Bomba, A. Sobczyk, A. Siemion, K. Świtkowski, C. Jastrzębski, A. Siemion, J. Suszek, and M. Sypek, “The time domain spectroscopy goniometric setup characterization by the utilization of the plastic diffraction grating,” Photonics Lett. Pol. 4(3), 121–123 (2012).
[Crossref]

M. Sypek, J.-L. Coutaz, A. Kolodziejczyk, M. Makowski, and J. Suszek, “Aberrations of the large aperture attenuating THz lenses,” Proc. SPIE 8261, 826110 (2012).
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M. Sypek, C. Prokopowicz, and M. Górecki, “Image multiplying and high frequency oscillations effects in the Fresnel region light propagation simulation,” Opt. Eng. 42(11), 3158–3164 (2003).
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Z. Jaroszewicz, A. Kolodziejczyk, M. Sypek, and C. Gómez-Reino, “Non-paraxial analytical solution for the generation of focal curves,” J. Mod. Opt. 43(3), 617–637 (1996).
[Crossref]

M. Sypek, “Light propagation in the Fresnel region. New numerical approach,” Opt. Commun. 116(1–3), 43–48 (1995).
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Szustakowski, M.

T. Trzcinski, N. Pałka, and M. Szustakowski, “THz spectroscopy of explosive-related simulants and oxidizers,” in Bull. Pol. Acad. Sci. Tech. (Paris) 59(4), 445–447 (2011).

Teppe, F.

W. Knap, S. Rumyantsev, M. S. Vitiello, D. Coquillat, S. Blin, N. Dyakonova, M. Shur, F. Teppe, A. Tredicucci, and T. Nagatsuma, “Nanometer size field effect transistors for terahertz detectors,” Nanotechnology 24(21), 214002 (2013).
[Crossref] [PubMed]

S. Nadar, H. Videlier, D. Coquillat, F. Teppe, M. Sakowicz, N. Dyakonova, W. Knap, D. Seliuta, I. Kašalynas, and G. Valušis, “Room temperature imaging at 1.63 and 2.54 with field effect transistor,” J. Appl. Phys. 108(5), 054508 (2010).
[Crossref]

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: physics and first imaging applications,” J. Infrared Millim. Te. 30(12), 1319–1337 (2009).

Y. M. Meziani, H. Handa, W. Knap, T. Otsuji, E. Sano, V. V. Popov, G. M. Tsymbalov, D. Coquillat, and F. Teppe, “Room temperature terahertz emission from grating coupled two-dimensional plasmons,” Appl. Phys. Lett. 92(20), 201108 (2008).
[Crossref]

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer Transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[Crossref]

N. Dyakonova, F. Teppe, J. Łusakowski, W. Knap, M. Levinshtein, A. P. Dmitriev, M. S. Shur, S. Bollaert, and A. Cappy, “Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors,” J. Appl. Phys. 97(11), 114313 (2005).
[Crossref]

Theron, D.

N. Dyakonova, A. El Fatimy, J. Łusakowski, W. Knap, M. I. Dyakonov, M. A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Y. Roelens, Ch. Gaquiere, D. Theron, and A. Cappy, “Room temperature terahertz emission from nanometer field-effect transistors,” Appl. Phys. Lett. 88(14), 141906 (2006).
[Crossref]

Tomasino, A.

A. Tomasino, A. Parisi, S. Stivala, P. Livreri, A. C. Cino, A. C. Busacca, M. Peccianti, and R. Morandotti, “Wideband THz time domain spectroscopy based on optical rectification and electro-optic sampling,” Sci. Rep. 3, 3116 (2013).
[Crossref] [PubMed]

Tredicucci, A.

W. Knap, S. Rumyantsev, M. S. Vitiello, D. Coquillat, S. Blin, N. Dyakonova, M. Shur, F. Teppe, A. Tredicucci, and T. Nagatsuma, “Nanometer size field effect transistors for terahertz detectors,” Nanotechnology 24(21), 214002 (2013).
[Crossref] [PubMed]

Trzcinski, T.

T. Trzcinski, N. Pałka, and M. Szustakowski, “THz spectroscopy of explosive-related simulants and oxidizers,” in Bull. Pol. Acad. Sci. Tech. (Paris) 59(4), 445–447 (2011).

Tsymbalov, G. M.

Y. M. Meziani, H. Handa, W. Knap, T. Otsuji, E. Sano, V. V. Popov, G. M. Tsymbalov, D. Coquillat, and F. Teppe, “Room temperature terahertz emission from grating coupled two-dimensional plasmons,” Appl. Phys. Lett. 92(20), 201108 (2008).
[Crossref]

Tünnermann, A.

Uzawa, Y.

T. Nitta, M. Naruse, Y. Sekimoto, K. Mitsui, N. Okada, K. Karatsu, M. Sekine, H. Matsuo, T. Noguchi, Y. Uzawa, M. Seta, and N. Nakai, “Beam pattern measurements of millimeter-wave kinetic inductance detector camera with direct machined silicon lens array,” IEEE Trans. Terahertz Sci. Technol. 3(1), 56–62 (2013).
[Crossref]

Valusis, G.

W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Łusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, “Field effect transistors for terahertz detection: physics and first imaging applications,” J. Infrared Millim. Te. 30(12), 1319–1337 (2009).

Valušis, G.

S. Nadar, H. Videlier, D. Coquillat, F. Teppe, M. Sakowicz, N. Dyakonova, W. Knap, D. Seliuta, I. Kašalynas, and G. Valušis, “Room temperature imaging at 1.63 and 2.54 with field effect transistor,” J. Appl. Phys. 108(5), 054508 (2010).
[Crossref]

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer Transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[Crossref]

Videlier, H.

S. Nadar, H. Videlier, D. Coquillat, F. Teppe, M. Sakowicz, N. Dyakonova, W. Knap, D. Seliuta, I. Kašalynas, and G. Valušis, “Room temperature imaging at 1.63 and 2.54 with field effect transistor,” J. Appl. Phys. 108(5), 054508 (2010).
[Crossref]

Vitiello, M. S.

W. Knap, S. Rumyantsev, M. S. Vitiello, D. Coquillat, S. Blin, N. Dyakonova, M. Shur, F. Teppe, A. Tredicucci, and T. Nagatsuma, “Nanometer size field effect transistors for terahertz detectors,” Nanotechnology 24(21), 214002 (2013).
[Crossref] [PubMed]

Walker, S. J.

Wallace, H. B.

R. Appleby and H. B. Wallace, “Standoff detection of weapons and contraband in the 100 GHz to 1 THz region,” IEEE Trans. Antenn. Propag. 55(11), 2944–2956 (2007).
[Crossref]

Walsby, E. D.

Wasilewski, Z.

C. Skierbiszewski, K. Dybko, W. Knap, M. Siekacz, W. Krupczyński, G. Nowak, M. Bockowski, J. Łusakowski, Z. Wasilewski, D. K. Maude, T. Suski, and S. Porowski, “High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy,” Appl. Phys. Lett. 86(10), 102106 (2005).
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Weidenbach, M.

S. F. Busch, M. Weidenbach, M. Fey, F. Schäfer, T. Probst, and M. Koch, “Optical properties of 3D printable plastics in the THz regime and their application for 3D printed THz optics,” J. Infrared Millim. Terahertz Waves 35(12), 993–997 (2014).
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Wietzke, S.

S. Wietzke, C. Jansen, M. Reuter, T. Jung, D. Kraft, S. Chatterjee, B. M. Fischer, and M. Koch, “Terahertz spectroscopy on polymers: A review of morphological studies,” J. Mol. Struct. 1006(1–3), 41–51 (2011).
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Worrall, C.

Yan, X.

X. Yan and P. Gu, “A review of rapid prototyping technologies and systems,” Comput. Aided Des. 28(4), 307–318 (1996).
[Crossref]

Zagrajek, P.

J. Suszek, A. Siemion, M. S. Bieda, N. Błocki, D. Coquillat, G. Cywiński, E. Czerwińska, M. Doch, A. Kowalczyk, N. Palka, A. Sobczyk, P. Zagrajek, M. Zaremba, A. Kolodziejczyk, W. Knap, and M. Sypek, “3-D-printed flat optics for THz linear scanners,” IEEE Trans. Terahertz Sci. Technol. 5(2), 314–316 (2015).
[Crossref]

Zaremba, M.

J. Suszek, A. Siemion, M. S. Bieda, N. Błocki, D. Coquillat, G. Cywiński, E. Czerwińska, M. Doch, A. Kowalczyk, N. Palka, A. Sobczyk, P. Zagrajek, M. Zaremba, A. Kolodziejczyk, W. Knap, and M. Sypek, “3-D-printed flat optics for THz linear scanners,” IEEE Trans. Terahertz Sci. Technol. 5(2), 314–316 (2015).
[Crossref]

Zhang, W.

F. Zhou, W. Cao, B. Dong, T. Reissman, W. Zhang, and C. Sun, “Additive manufacturing of 3D terahertz gradient-refractive index lens,” Adv. Opt. Mater. 4(7), 1034–1040 (2016).
[Crossref]

Zhou, F.

F. Zhou, W. Cao, B. Dong, T. Reissman, W. Zhang, and C. Sun, “Additive manufacturing of 3D terahertz gradient-refractive index lens,” Adv. Opt. Mater. 4(7), 1034–1040 (2016).
[Crossref]

Adv. Opt. Mater. (1)

F. Zhou, W. Cao, B. Dong, T. Reissman, W. Zhang, and C. Sun, “Additive manufacturing of 3D terahertz gradient-refractive index lens,” Adv. Opt. Mater. 4(7), 1034–1040 (2016).
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Appl. Opt. (1)

Appl. Phys. Lett. (5)

N. Dyakonova, A. El Fatimy, J. Łusakowski, W. Knap, M. I. Dyakonov, M. A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Y. Roelens, Ch. Gaquiere, D. Theron, and A. Cappy, “Room temperature terahertz emission from nanometer field-effect transistors,” Appl. Phys. Lett. 88(14), 141906 (2006).
[Crossref]

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valušis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, “Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer Transistors,” Appl. Phys. Lett. 89(13), 131926 (2006).
[Crossref]

Y. M. Meziani, H. Handa, W. Knap, T. Otsuji, E. Sano, V. V. Popov, G. M. Tsymbalov, D. Coquillat, and F. Teppe, “Room temperature terahertz emission from grating coupled two-dimensional plasmons,” Appl. Phys. Lett. 92(20), 201108 (2008).
[Crossref]

W. Knap, J. Łusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, and M. S. Shur, “Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors,” Appl. Phys. Lett. 84(13), 2331 (2004).
[Crossref]

C. Skierbiszewski, K. Dybko, W. Knap, M. Siekacz, W. Krupczyński, G. Nowak, M. Bockowski, J. Łusakowski, Z. Wasilewski, D. K. Maude, T. Suski, and S. Porowski, “High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy,” Appl. Phys. Lett. 86(10), 102106 (2005).
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Comput. Aided Des. (1)

X. Yan and P. Gu, “A review of rapid prototyping technologies and systems,” Comput. Aided Des. 28(4), 307–318 (1996).
[Crossref]

IEEE J. Solid-St. Circulation (2)

E. Seok, D. Shim, C. Mao, R. Han, S. Sankaran, C. Cao, W. Knap, and K. O. Kenneth, “Progress and challenges towards terahertz CMOS integrated circuits,” IEEE J. Solid-St. Circulation 45(8), 1554–1564 (2010).

E. Ojefors, U. Pfeiffer, A. Lisauskas, and H. Roskos, “0.65 THz focal-plane array in a quarter-micron CMOS process technology,” IEEE J. Solid-St. Circulation 44(7), 1968–1976 (2009).

IEEE Trans. Antenn. Propag. (1)

R. Appleby and H. B. Wallace, “Standoff detection of weapons and contraband in the 100 GHz to 1 THz region,” IEEE Trans. Antenn. Propag. 55(11), 2944–2956 (2007).
[Crossref]

IEEE Trans. Electron Dev. (1)

M. I. Dyakonov and M. S. Shur, “Plasma wave electronics: novel terahertz devices using two dimensional electron fluid,” IEEE Trans. Electron Dev. 43(10), 1640–1645 (1996).
[Crossref]

IEEE Trans. Terahertz Sci. Technol. (3)

T. Nitta, M. Naruse, Y. Sekimoto, K. Mitsui, N. Okada, K. Karatsu, M. Sekine, H. Matsuo, T. Noguchi, Y. Uzawa, M. Seta, and N. Nakai, “Beam pattern measurements of millimeter-wave kinetic inductance detector camera with direct machined silicon lens array,” IEEE Trans. Terahertz Sci. Technol. 3(1), 56–62 (2013).
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N. Llombart, C. Lee, M. Alonso-delPino, G. Chattopadhyay, C. J. Kubiak, L. Jofre, and I. Mehdi, and Student Member, “Silicon micromachined lens antenna for THz integrated heterodyne arrays,” IEEE Trans. Terahertz Sci. Technol. 3(5), 515–523 (2013).
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J. Suszek, A. Siemion, M. S. Bieda, N. Błocki, D. Coquillat, G. Cywiński, E. Czerwińska, M. Doch, A. Kowalczyk, N. Palka, A. Sobczyk, P. Zagrajek, M. Zaremba, A. Kolodziejczyk, W. Knap, and M. Sypek, “3-D-printed flat optics for THz linear scanners,” IEEE Trans. Terahertz Sci. Technol. 5(2), 314–316 (2015).
[Crossref]

in Bull. Pol. Acad. Sci. Tech. (Paris) (1)

T. Trzcinski, N. Pałka, and M. Szustakowski, “THz spectroscopy of explosive-related simulants and oxidizers,” in Bull. Pol. Acad. Sci. Tech. (Paris) 59(4), 445–447 (2011).

J. Appl. Phys. (3)

S. Nadar, H. Videlier, D. Coquillat, F. Teppe, M. Sakowicz, N. Dyakonova, W. Knap, D. Seliuta, I. Kašalynas, and G. Valušis, “Room temperature imaging at 1.63 and 2.54 with field effect transistor,” J. Appl. Phys. 108(5), 054508 (2010).
[Crossref]

N. Dyakonova, F. Teppe, J. Łusakowski, W. Knap, M. Levinshtein, A. P. Dmitriev, M. S. Shur, S. Bollaert, and A. Cappy, “Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors,” J. Appl. Phys. 97(11), 114313 (2005).
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M. Sakowicz, J. Łusakowski, K. Karpierz, M. Grynberg, W. Knap, and W. Gwarek, “Polarization sensitive detection of 100 GHz radiation by high mobility field-effect transistors,” J. Appl. Phys. 104(2), 024519 (2008).
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J. Infrared Millim. Te. (1)

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Figures (7)

Fig. 1
Fig. 1 Upper part: cross-sections of the single pixel/lens with all dimensions indicated in millimeters. Region A is a diffractive lens with a 1-mm-thick substrate layer, region B is an empty space, and region C is the base, in which the mounting hole for the detector (D) is located. Middle part: two dimensional phase distribution (coded modulo π) for non-paraxial approach f = 10 mm, a = 10 mm, 300 GHz (black – phase retardation 2π; white – phase retardation 0). Lower part: the horizontal cross section of the phase error Eq. (3) for f = 10 mm a = 10 mm, 300 GHz lens. This error was suppressed by using an appropriate design process.
Fig. 2
Fig. 2 Computed 3D radiation pattern of the lens with f = 10 mm, a = 10 mm, (shown in Fig. 1), at 300 GHz. Upper part: intensity XZ cross section at y = 0, lower part XY cross sections calculated at constant value of z = 1, 2, 3, 5, 7, and 9 mm respectively (shown by arrows in Fig. 1).
Fig. 3
Fig. 3 Photographs of 3 × 3 lens matrices produced from polymer PA12 (a) front views of the matrices, (b) rear view of the matrix showing the holes used for positioning the detectors at the focal points.
Fig. 4
Fig. 4 Photoresponse of the FET THz detector as a function of the excitation frequency. Inset shows the layout of the transistor.
Fig. 5
Fig. 5 Block diagram of the optical setup for XYZ scanning of the lens arrays. The FET THz detector (D) was mounted on a moving holder. The beam was formed by a flat mirror and a parabolic mirror (PM). The detector voltage signal was collected using a preamplifier (Amp) and a lock-in amplifier.
Fig. 6
Fig. 6 Results of YZ scanning measurements for the matrix of the PA12 lenses. The figure shows the beam distribution after passing through the matrix. Nine visible maxima (the focal spots in the matrix of lenses) correspond to the planned positions of the FET THz detectors.
Fig. 7
Fig. 7 Photographs of FET detectors panels/modules manufactured using PCB electronics for the fast THz scanner (operating at 300 GHz): (a) four panels with mounted lens arrays and (b) a separated single panel without the lens array.

Tables (1)

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Table 1 Comparison of Different Lenses: S0–Signal without Lens, S–Signal with Lens

Equations (5)

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T par ( x,y )=exp( i k x 2 + y 2 2f ), where k= 2π λ ,  i 2 =1
T( x,y )=exp( ik x 2 + y 2 + f 2 )
Err( x,y )=exp( ik ( x 2 + y 2 ) 2f ik x 2 + y 2 + f 2 )
2.44λ ( d/f )=2.44 λF#
h=λ/( n1 )

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