Abstract

We demonstrate very high luminous efficacy green light-emitting diodes employing Al0.30Ga0.70N cap layer grown on patterned sapphire substrates by metal organic chemical vapor deposition. The peak external quantum efficiency and luminous efficacies were 44.3% and 239 lm/w, respectively. At 20 mA (20 A/cm2) the light output power was 14.3 mW, the forward voltage was 3.5 V, the emission wavelength was 526.6 nm, and the external quantum efficiency was 30.2%. These results are among the highest reported luminous efficacy values for InGaN based green light-emitting diodes.

© 2016 Optical Society of America

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  1. S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
    [Crossref]
  2. M. G. Craford, N. Holonyak, and F. A. Kish., “In pursuit of the ultimate lamp,” Sci. Am. (Feb): 83–88 (2001).
  3. S. Nakamura, M. Senoh, and T. Mukai, “P-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emitting diodes,” Jpn. J. Appl. Phys. 32(2), L8–L11 (1993).
    [Crossref]
  4. S. Nakamura, N. Senoh, N. Iwasa, and S. I. Nagahama, “High-brightness InGaN blue, green and yellow light-emitting-diodes with quantum-well structures,” Jpn. J. Appl. Phys. 34(2), L797–L799 (1995).
    [Crossref]
  5. X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
    [Crossref]
  6. J. T. Chen, U. Forsberg, and E. Janzén, “Impact of residual carbon on two-dimensional electron gas properties in AlxGa1-xN/GaN heterostructure,” Appl. Phys. Lett. 102(19), 193506 (2013).
    [Crossref] [PubMed]
  7. N. Okada, K. Tadatomo, K. Yamane, H. Mangyo, Y. Kobayashi, H. Ono, K. Ikenaga, Y. Yano, and K. Matsumoto, “Performance of InGaN/GaN light-emitting diodes grown using NH 3 with oxygen-containing impurities,” Jpn. J. Appl. Phys. 53(8), 081001 (2014).
    [Crossref]
  8. D. D. Koleske, S. R. Lee, M. H. Crawford, K. C. Cross, M. E. Coltrin, and J. M. Kempisty, “Connection between GaN and InGaN growth mechanisms and surface morphology,” J. Cryst. Growth 391, 85–96 (2014).
    [Crossref]
  9. E. Kioupakis, Q. Yan, and C. G. Van De Walle, “Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes,” Appl. Phys. Lett. 101(23), 231107 (2012).
    [Crossref]
  10. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures,” Appl. Phys. Lett. 69(27), 4188–4190 (1996).
    [Crossref]
  11. A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck, and ERATO/JST UCSB Group, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100(2), 023522 (2006).
    [Crossref]
  12. F. Bernardini and V. Fiorentini, “Spontaneous versus piezoelectric polarization in III-V nitrides: conceptual aspects and practical consequences,” Phys. Status Solidi 216(16), 391–398 (1999).
    [Crossref]
  13. Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
    [Crossref]
  14. S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, “InGaN Light-Emitting Diodes on c -Face Sapphire Substrates in Green Gap Spectral Range,” Appl. Phys. Express 6(11), 111004 (2013).
    [Crossref]
  15. T. Shioda, H. Yoshida, K. Tachibana, N. Sugiyama, and S. Nunoue, “Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate,” Phys. Status Solidi 209(3), 473–476 (2012).
    [Crossref]
  16. K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 40(2), L583–L585 (2001).
    [Crossref]
  17. X. H. Huang, J. P. Liu, J. J. Kong, H. Yang, H. B. Wang, H. M. Chou, C. H. Hou, Y. Y. Chang, M. S. Chu, C. H. Wu, and C. H. Ho, “High-efficiency InGaN-based LEDs grown on patterned sapphire substrates,” Opt. Express 19(S4), A949–A955 (2011).
    [Crossref] [PubMed]
  18. C. C. Pan, I. Koslow, J. Sonoda, H. Ohta, J. S. Ha, S. Nakamura, and S. P. DenBaars, “Vertical stand transparent light-emitting diode architecture for high-efficiency and high-power light-emitting diodes,” Jpn. J. Appl. Phys. 49(8), 080210 (2010).
    [Crossref]
  19. T. Doi, Y. Honda, M. Yamaguchi, and H. Amano, “Strain-Compensated Effect on the Growth of InGaN / AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 52(8S), 08JB14 (2013).
    [Crossref]
  20. K. Lekhal, B. Damilano, H. T. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès, and B. Gil, “Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission,” Appl. Phys. Lett. 106(14), 142101 (2015).
    [Crossref]
  21. A. David and M. J. Grundmann, “Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes,” Appl. Phys. Lett. 97(3), 033501 (2010).
    [Crossref]
  22. R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency green-yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi 10(11), 1529–1532 (2013).
    [Crossref]
  23. R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. Denbaars, J. S. Speck, and S. Nakamura, “Demonstration of a semipolar (10 1- 3-) InGaN/GaN green light emitting diode,” Appl. Phys. Lett. 87(23), 231110 (2005).
    [Crossref]

2015 (1)

K. Lekhal, B. Damilano, H. T. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès, and B. Gil, “Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission,” Appl. Phys. Lett. 106(14), 142101 (2015).
[Crossref]

2014 (2)

N. Okada, K. Tadatomo, K. Yamane, H. Mangyo, Y. Kobayashi, H. Ono, K. Ikenaga, Y. Yano, and K. Matsumoto, “Performance of InGaN/GaN light-emitting diodes grown using NH 3 with oxygen-containing impurities,” Jpn. J. Appl. Phys. 53(8), 081001 (2014).
[Crossref]

D. D. Koleske, S. R. Lee, M. H. Crawford, K. C. Cross, M. E. Coltrin, and J. M. Kempisty, “Connection between GaN and InGaN growth mechanisms and surface morphology,” J. Cryst. Growth 391, 85–96 (2014).
[Crossref]

2013 (4)

J. T. Chen, U. Forsberg, and E. Janzén, “Impact of residual carbon on two-dimensional electron gas properties in AlxGa1-xN/GaN heterostructure,” Appl. Phys. Lett. 102(19), 193506 (2013).
[Crossref] [PubMed]

S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, “InGaN Light-Emitting Diodes on c -Face Sapphire Substrates in Green Gap Spectral Range,” Appl. Phys. Express 6(11), 111004 (2013).
[Crossref]

T. Doi, Y. Honda, M. Yamaguchi, and H. Amano, “Strain-Compensated Effect on the Growth of InGaN / AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 52(8S), 08JB14 (2013).
[Crossref]

R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency green-yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi 10(11), 1529–1532 (2013).
[Crossref]

2012 (2)

T. Shioda, H. Yoshida, K. Tachibana, N. Sugiyama, and S. Nunoue, “Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate,” Phys. Status Solidi 209(3), 473–476 (2012).
[Crossref]

E. Kioupakis, Q. Yan, and C. G. Van De Walle, “Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes,” Appl. Phys. Lett. 101(23), 231107 (2012).
[Crossref]

2011 (1)

2010 (3)

A. David and M. J. Grundmann, “Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes,” Appl. Phys. Lett. 97(3), 033501 (2010).
[Crossref]

C. C. Pan, I. Koslow, J. Sonoda, H. Ohta, J. S. Ha, S. Nakamura, and S. P. DenBaars, “Vertical stand transparent light-emitting diode architecture for high-efficiency and high-power light-emitting diodes,” Jpn. J. Appl. Phys. 49(8), 080210 (2010).
[Crossref]

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

2009 (1)

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
[Crossref]

2006 (1)

A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck, and ERATO/JST UCSB Group, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100(2), 023522 (2006).
[Crossref]

2005 (1)

R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. Denbaars, J. S. Speck, and S. Nakamura, “Demonstration of a semipolar (10 1- 3-) InGaN/GaN green light emitting diode,” Appl. Phys. Lett. 87(23), 231110 (2005).
[Crossref]

2001 (1)

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 40(2), L583–L585 (2001).
[Crossref]

1999 (1)

F. Bernardini and V. Fiorentini, “Spontaneous versus piezoelectric polarization in III-V nitrides: conceptual aspects and practical consequences,” Phys. Status Solidi 216(16), 391–398 (1999).
[Crossref]

1998 (1)

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
[Crossref]

1996 (1)

S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures,” Appl. Phys. Lett. 69(27), 4188–4190 (1996).
[Crossref]

1995 (1)

S. Nakamura, N. Senoh, N. Iwasa, and S. I. Nagahama, “High-brightness InGaN blue, green and yellow light-emitting-diodes with quantum-well structures,” Jpn. J. Appl. Phys. 34(2), L797–L799 (1995).
[Crossref]

1993 (1)

S. Nakamura, M. Senoh, and T. Mukai, “P-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emitting diodes,” Jpn. J. Appl. Phys. 32(2), L8–L11 (1993).
[Crossref]

Abare, A.

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
[Crossref]

Amano, H.

T. Doi, Y. Honda, M. Yamaguchi, and H. Amano, “Strain-Compensated Effect on the Growth of InGaN / AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 52(8S), 08JB14 (2013).
[Crossref]

Azuhata, T.

S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures,” Appl. Phys. Lett. 69(27), 4188–4190 (1996).
[Crossref]

Baker, T. J.

A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck, and ERATO/JST UCSB Group, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100(2), 023522 (2006).
[Crossref]

R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. Denbaars, J. S. Speck, and S. Nakamura, “Demonstration of a semipolar (10 1- 3-) InGaN/GaN green light emitting diode,” Appl. Phys. Lett. 87(23), 231110 (2005).
[Crossref]

Bernardini, F.

F. Bernardini and V. Fiorentini, “Spontaneous versus piezoelectric polarization in III-V nitrides: conceptual aspects and practical consequences,” Phys. Status Solidi 216(16), 391–398 (1999).
[Crossref]

Chang, Y. Y.

Chen, J. T.

J. T. Chen, U. Forsberg, and E. Janzén, “Impact of residual carbon on two-dimensional electron gas properties in AlxGa1-xN/GaN heterostructure,” Appl. Phys. Lett. 102(19), 193506 (2013).
[Crossref] [PubMed]

Chichibu, S.

S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures,” Appl. Phys. Lett. 69(27), 4188–4190 (1996).
[Crossref]

Chou, H. M.

Chu, M. S.

Coltrin, M. E.

D. D. Koleske, S. R. Lee, M. H. Crawford, K. C. Cross, M. E. Coltrin, and J. M. Kempisty, “Connection between GaN and InGaN growth mechanisms and surface morphology,” J. Cryst. Growth 391, 85–96 (2014).
[Crossref]

Craford, M. G.

M. G. Craford, N. Holonyak, and F. A. Kish., “In pursuit of the ultimate lamp,” Sci. Am. (Feb): 83–88 (2001).

Crawford, M. H.

D. D. Koleske, S. R. Lee, M. H. Crawford, K. C. Cross, M. E. Coltrin, and J. M. Kempisty, “Connection between GaN and InGaN growth mechanisms and surface morphology,” J. Cryst. Growth 391, 85–96 (2014).
[Crossref]

Cross, K. C.

D. D. Koleske, S. R. Lee, M. H. Crawford, K. C. Cross, M. E. Coltrin, and J. M. Kempisty, “Connection between GaN and InGaN growth mechanisms and surface morphology,” J. Cryst. Growth 391, 85–96 (2014).
[Crossref]

Damilano, B.

K. Lekhal, B. Damilano, H. T. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès, and B. Gil, “Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission,” Appl. Phys. Lett. 106(14), 142101 (2015).
[Crossref]

David, A.

A. David and M. J. Grundmann, “Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes,” Appl. Phys. Lett. 97(3), 033501 (2010).
[Crossref]

De Mierry, P.

K. Lekhal, B. Damilano, H. T. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès, and B. Gil, “Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission,” Appl. Phys. Lett. 106(14), 142101 (2015).
[Crossref]

DenBaars, S. P.

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

C. C. Pan, I. Koslow, J. Sonoda, H. Ohta, J. S. Ha, S. Nakamura, and S. P. DenBaars, “Vertical stand transparent light-emitting diode architecture for high-efficiency and high-power light-emitting diodes,” Jpn. J. Appl. Phys. 49(8), 080210 (2010).
[Crossref]

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
[Crossref]

R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. Denbaars, J. S. Speck, and S. Nakamura, “Demonstration of a semipolar (10 1- 3-) InGaN/GaN green light emitting diode,” Appl. Phys. Lett. 87(23), 231110 (2005).
[Crossref]

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
[Crossref]

Doi, T.

T. Doi, Y. Honda, M. Yamaguchi, and H. Amano, “Strain-Compensated Effect on the Growth of InGaN / AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 52(8S), 08JB14 (2013).
[Crossref]

Elsass, C. R.

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
[Crossref]

Farrell, R. M.

R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. Denbaars, J. S. Speck, and S. Nakamura, “Demonstration of a semipolar (10 1- 3-) InGaN/GaN green light emitting diode,” Appl. Phys. Lett. 87(23), 231110 (2005).
[Crossref]

Fiorentini, V.

F. Bernardini and V. Fiorentini, “Spontaneous versus piezoelectric polarization in III-V nitrides: conceptual aspects and practical consequences,” Phys. Status Solidi 216(16), 391–398 (1999).
[Crossref]

Forsberg, U.

J. T. Chen, U. Forsberg, and E. Janzén, “Impact of residual carbon on two-dimensional electron gas properties in AlxGa1-xN/GaN heterostructure,” Appl. Phys. Lett. 102(19), 193506 (2013).
[Crossref] [PubMed]

Fujito, K.

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

Gil, B.

K. Lekhal, B. Damilano, H. T. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès, and B. Gil, “Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission,” Appl. Phys. Lett. 106(14), 142101 (2015).
[Crossref]

Grundmann, M. J.

A. David and M. J. Grundmann, “Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes,” Appl. Phys. Lett. 97(3), 033501 (2010).
[Crossref]

Ha, J. S.

C. C. Pan, I. Koslow, J. Sonoda, H. Ohta, J. S. Ha, S. Nakamura, and S. P. DenBaars, “Vertical stand transparent light-emitting diode architecture for high-efficiency and high-power light-emitting diodes,” Jpn. J. Appl. Phys. 49(8), 080210 (2010).
[Crossref]

Hashimoto, R.

S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, “InGaN Light-Emitting Diodes on c -Face Sapphire Substrates in Green Gap Spectral Range,” Appl. Phys. Express 6(11), 111004 (2013).
[Crossref]

R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency green-yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi 10(11), 1529–1532 (2013).
[Crossref]

Haskell, B. A.

R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. Denbaars, J. S. Speck, and S. Nakamura, “Demonstration of a semipolar (10 1- 3-) InGaN/GaN green light emitting diode,” Appl. Phys. Lett. 87(23), 231110 (2005).
[Crossref]

Ho, C. H.

Holonyak, N.

M. G. Craford, N. Holonyak, and F. A. Kish., “In pursuit of the ultimate lamp,” Sci. Am. (Feb): 83–88 (2001).

Honda, Y.

T. Doi, Y. Honda, M. Yamaguchi, and H. Amano, “Strain-Compensated Effect on the Growth of InGaN / AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 52(8S), 08JB14 (2013).
[Crossref]

Hou, C. H.

Hsiung, C.-L.

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

Huang, C.-Y.

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

Huang, X. H.

Hussain, S.

K. Lekhal, B. Damilano, H. T. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès, and B. Gil, “Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission,” Appl. Phys. Lett. 106(14), 142101 (2015).
[Crossref]

Hwang, J.

R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency green-yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi 10(11), 1529–1532 (2013).
[Crossref]

S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, “InGaN Light-Emitting Diodes on c -Face Sapphire Substrates in Green Gap Spectral Range,” Appl. Phys. Express 6(11), 111004 (2013).
[Crossref]

Ikenaga, K.

N. Okada, K. Tadatomo, K. Yamane, H. Mangyo, Y. Kobayashi, H. Ono, K. Ikenaga, Y. Yano, and K. Matsumoto, “Performance of InGaN/GaN light-emitting diodes grown using NH 3 with oxygen-containing impurities,” Jpn. J. Appl. Phys. 53(8), 081001 (2014).
[Crossref]

Imada, Y.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 40(2), L583–L585 (2001).
[Crossref]

Iwasa, N.

S. Nakamura, N. Senoh, N. Iwasa, and S. I. Nagahama, “High-brightness InGaN blue, green and yellow light-emitting-diodes with quantum-well structures,” Jpn. J. Appl. Phys. 34(2), L797–L799 (1995).
[Crossref]

Janzén, E.

J. T. Chen, U. Forsberg, and E. Janzén, “Impact of residual carbon on two-dimensional electron gas properties in AlxGa1-xN/GaN heterostructure,” Appl. Phys. Lett. 102(19), 193506 (2013).
[Crossref] [PubMed]

Kato, M.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 40(2), L583–L585 (2001).
[Crossref]

Keller, S.

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
[Crossref]

Kempisty, J. M.

D. D. Koleske, S. R. Lee, M. H. Crawford, K. C. Cross, M. E. Coltrin, and J. M. Kempisty, “Connection between GaN and InGaN growth mechanisms and surface morphology,” J. Cryst. Growth 391, 85–96 (2014).
[Crossref]

Kioupakis, E.

E. Kioupakis, Q. Yan, and C. G. Van De Walle, “Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes,” Appl. Phys. Lett. 101(23), 231107 (2012).
[Crossref]

Kish, F. A.

M. G. Craford, N. Holonyak, and F. A. Kish., “In pursuit of the ultimate lamp,” Sci. Am. (Feb): 83–88 (2001).

Kobayashi, Y.

N. Okada, K. Tadatomo, K. Yamane, H. Mangyo, Y. Kobayashi, H. Ono, K. Ikenaga, Y. Yano, and K. Matsumoto, “Performance of InGaN/GaN light-emitting diodes grown using NH 3 with oxygen-containing impurities,” Jpn. J. Appl. Phys. 53(8), 081001 (2014).
[Crossref]

Koleske, D. D.

D. D. Koleske, S. R. Lee, M. H. Crawford, K. C. Cross, M. E. Coltrin, and J. M. Kempisty, “Connection between GaN and InGaN growth mechanisms and surface morphology,” J. Cryst. Growth 391, 85–96 (2014).
[Crossref]

Kong, J. J.

Koslow, I.

C. C. Pan, I. Koslow, J. Sonoda, H. Ohta, J. S. Ha, S. Nakamura, and S. P. DenBaars, “Vertical stand transparent light-emitting diode architecture for high-efficiency and high-power light-emitting diodes,” Jpn. J. Appl. Phys. 49(8), 080210 (2010).
[Crossref]

Lee, S. R.

D. D. Koleske, S. R. Lee, M. H. Crawford, K. C. Cross, M. E. Coltrin, and J. M. Kempisty, “Connection between GaN and InGaN growth mechanisms and surface morphology,” J. Cryst. Growth 391, 85–96 (2014).
[Crossref]

Lekhal, K.

K. Lekhal, B. Damilano, H. T. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès, and B. Gil, “Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission,” Appl. Phys. Lett. 106(14), 142101 (2015).
[Crossref]

Lin, Y.-D.

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

Liu, J. P.

Mack, M.

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
[Crossref]

Mangyo, H.

N. Okada, K. Tadatomo, K. Yamane, H. Mangyo, Y. Kobayashi, H. Ono, K. Ikenaga, Y. Yano, and K. Matsumoto, “Performance of InGaN/GaN light-emitting diodes grown using NH 3 with oxygen-containing impurities,” Jpn. J. Appl. Phys. 53(8), 081001 (2014).
[Crossref]

Masui, H.

R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. Denbaars, J. S. Speck, and S. Nakamura, “Demonstration of a semipolar (10 1- 3-) InGaN/GaN green light emitting diode,” Appl. Phys. Lett. 87(23), 231110 (2005).
[Crossref]

Matsumoto, K.

N. Okada, K. Tadatomo, K. Yamane, H. Mangyo, Y. Kobayashi, H. Ono, K. Ikenaga, Y. Yano, and K. Matsumoto, “Performance of InGaN/GaN light-emitting diodes grown using NH 3 with oxygen-containing impurities,” Jpn. J. Appl. Phys. 53(8), 081001 (2014).
[Crossref]

Mukai, T.

S. Nakamura, M. Senoh, and T. Mukai, “P-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emitting diodes,” Jpn. J. Appl. Phys. 32(2), L8–L11 (1993).
[Crossref]

Nagahama, S. I.

S. Nakamura, N. Senoh, N. Iwasa, and S. I. Nagahama, “High-brightness InGaN blue, green and yellow light-emitting-diodes with quantum-well structures,” Jpn. J. Appl. Phys. 34(2), L797–L799 (1995).
[Crossref]

Nakamura, S.

C. C. Pan, I. Koslow, J. Sonoda, H. Ohta, J. S. Ha, S. Nakamura, and S. P. DenBaars, “Vertical stand transparent light-emitting diode architecture for high-efficiency and high-power light-emitting diodes,” Jpn. J. Appl. Phys. 49(8), 080210 (2010).
[Crossref]

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
[Crossref]

A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck, and ERATO/JST UCSB Group, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100(2), 023522 (2006).
[Crossref]

R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. Denbaars, J. S. Speck, and S. Nakamura, “Demonstration of a semipolar (10 1- 3-) InGaN/GaN green light emitting diode,” Appl. Phys. Lett. 87(23), 231110 (2005).
[Crossref]

S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures,” Appl. Phys. Lett. 69(27), 4188–4190 (1996).
[Crossref]

S. Nakamura, N. Senoh, N. Iwasa, and S. I. Nagahama, “High-brightness InGaN blue, green and yellow light-emitting-diodes with quantum-well structures,” Jpn. J. Appl. Phys. 34(2), L797–L799 (1995).
[Crossref]

S. Nakamura, M. Senoh, and T. Mukai, “P-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emitting diodes,” Jpn. J. Appl. Phys. 32(2), L8–L11 (1993).
[Crossref]

Ngo, H. T.

K. Lekhal, B. Damilano, H. T. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès, and B. Gil, “Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission,” Appl. Phys. Lett. 106(14), 142101 (2015).
[Crossref]

Nunoue, S.

R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency green-yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi 10(11), 1529–1532 (2013).
[Crossref]

S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, “InGaN Light-Emitting Diodes on c -Face Sapphire Substrates in Green Gap Spectral Range,” Appl. Phys. Express 6(11), 111004 (2013).
[Crossref]

T. Shioda, H. Yoshida, K. Tachibana, N. Sugiyama, and S. Nunoue, “Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate,” Phys. Status Solidi 209(3), 473–476 (2012).
[Crossref]

Ohta, H.

C. C. Pan, I. Koslow, J. Sonoda, H. Ohta, J. S. Ha, S. Nakamura, and S. P. DenBaars, “Vertical stand transparent light-emitting diode architecture for high-efficiency and high-power light-emitting diodes,” Jpn. J. Appl. Phys. 49(8), 080210 (2010).
[Crossref]

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

Ohuchi, Y.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 40(2), L583–L585 (2001).
[Crossref]

Okada, N.

N. Okada, K. Tadatomo, K. Yamane, H. Mangyo, Y. Kobayashi, H. Ono, K. Ikenaga, Y. Yano, and K. Matsumoto, “Performance of InGaN/GaN light-emitting diodes grown using NH 3 with oxygen-containing impurities,” Jpn. J. Appl. Phys. 53(8), 081001 (2014).
[Crossref]

Okagawa, H.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 40(2), L583–L585 (2001).
[Crossref]

Ono, H.

N. Okada, K. Tadatomo, K. Yamane, H. Mangyo, Y. Kobayashi, H. Ono, K. Ikenaga, Y. Yano, and K. Matsumoto, “Performance of InGaN/GaN light-emitting diodes grown using NH 3 with oxygen-containing impurities,” Jpn. J. Appl. Phys. 53(8), 081001 (2014).
[Crossref]

Pan, C. C.

C. C. Pan, I. Koslow, J. Sonoda, H. Ohta, J. S. Ha, S. Nakamura, and S. P. DenBaars, “Vertical stand transparent light-emitting diode architecture for high-efficiency and high-power light-emitting diodes,” Jpn. J. Appl. Phys. 49(8), 080210 (2010).
[Crossref]

Pattison, P. M.

R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. Denbaars, J. S. Speck, and S. Nakamura, “Demonstration of a semipolar (10 1- 3-) InGaN/GaN green light emitting diode,” Appl. Phys. Lett. 87(23), 231110 (2005).
[Crossref]

Petroff, P. M.

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
[Crossref]

Pimputkar, S.

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
[Crossref]

Romanov, A. E.

A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck, and ERATO/JST UCSB Group, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100(2), 023522 (2006).
[Crossref]

Rosales, D.

K. Lekhal, B. Damilano, H. T. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès, and B. Gil, “Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission,” Appl. Phys. Lett. 106(14), 142101 (2015).
[Crossref]

Rosner, S. J.

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
[Crossref]

Saito, S.

R. Hashimoto, J. Hwang, S. Saito, and S. Nunoue, “High-efficiency green-yellow light-emitting diodes grown on sapphire (0001) substrates,” Phys. Status Solidi 10(11), 1529–1532 (2013).
[Crossref]

S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, “InGaN Light-Emitting Diodes on c -Face Sapphire Substrates in Green Gap Spectral Range,” Appl. Phys. Express 6(11), 111004 (2013).
[Crossref]

Senoh, M.

S. Nakamura, M. Senoh, and T. Mukai, “P-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emitting diodes,” Jpn. J. Appl. Phys. 32(2), L8–L11 (1993).
[Crossref]

Senoh, N.

S. Nakamura, N. Senoh, N. Iwasa, and S. I. Nagahama, “High-brightness InGaN blue, green and yellow light-emitting-diodes with quantum-well structures,” Jpn. J. Appl. Phys. 34(2), L797–L799 (1995).
[Crossref]

Sharma, R.

R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. Denbaars, J. S. Speck, and S. Nakamura, “Demonstration of a semipolar (10 1- 3-) InGaN/GaN green light emitting diode,” Appl. Phys. Lett. 87(23), 231110 (2005).
[Crossref]

Shioda, T.

T. Shioda, H. Yoshida, K. Tachibana, N. Sugiyama, and S. Nunoue, “Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate,” Phys. Status Solidi 209(3), 473–476 (2012).
[Crossref]

Sonoda, J.

C. C. Pan, I. Koslow, J. Sonoda, H. Ohta, J. S. Ha, S. Nakamura, and S. P. DenBaars, “Vertical stand transparent light-emitting diode architecture for high-efficiency and high-power light-emitting diodes,” Jpn. J. Appl. Phys. 49(8), 080210 (2010).
[Crossref]

Sota, T.

S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures,” Appl. Phys. Lett. 69(27), 4188–4190 (1996).
[Crossref]

Speck, J. S.

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics 3(4), 180–182 (2009).
[Crossref]

A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck, and ERATO/JST UCSB Group, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100(2), 023522 (2006).
[Crossref]

R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. Denbaars, J. S. Speck, and S. Nakamura, “Demonstration of a semipolar (10 1- 3-) InGaN/GaN green light emitting diode,” Appl. Phys. Lett. 87(23), 231110 (2005).
[Crossref]

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
[Crossref]

Sugiyama, N.

T. Shioda, H. Yoshida, K. Tachibana, N. Sugiyama, and S. Nunoue, “Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate,” Phys. Status Solidi 209(3), 473–476 (2012).
[Crossref]

Tachibana, K.

T. Shioda, H. Yoshida, K. Tachibana, N. Sugiyama, and S. Nunoue, “Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate,” Phys. Status Solidi 209(3), 473–476 (2012).
[Crossref]

Tadatomo, K.

N. Okada, K. Tadatomo, K. Yamane, H. Mangyo, Y. Kobayashi, H. Ono, K. Ikenaga, Y. Yano, and K. Matsumoto, “Performance of InGaN/GaN light-emitting diodes grown using NH 3 with oxygen-containing impurities,” Jpn. J. Appl. Phys. 53(8), 081001 (2014).
[Crossref]

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 40(2), L583–L585 (2001).
[Crossref]

Taguchi, T.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 40(2), L583–L585 (2001).
[Crossref]

Tsunekawa, T.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 40(2), L583–L585 (2001).
[Crossref]

Van De Walle, C. G.

E. Kioupakis, Q. Yan, and C. G. Van De Walle, “Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes,” Appl. Phys. Lett. 101(23), 231107 (2012).
[Crossref]

Vennéguès, P.

K. Lekhal, B. Damilano, H. T. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès, and B. Gil, “Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission,” Appl. Phys. Lett. 106(14), 142101 (2015).
[Crossref]

Wang, H. B.

Wu, C. H.

Wu, F.

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. Denbaars, J. S. Speck, and S. Nakamura, “Demonstration of a semipolar (10 1- 3-) InGaN/GaN green light emitting diode,” Appl. Phys. Lett. 87(23), 231110 (2005).
[Crossref]

Wu, X. H.

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
[Crossref]

Yamaguchi, M.

T. Doi, Y. Honda, M. Yamaguchi, and H. Amano, “Strain-Compensated Effect on the Growth of InGaN / AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 52(8S), 08JB14 (2013).
[Crossref]

Yamamoto, S.

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

Yamane, K.

N. Okada, K. Tadatomo, K. Yamane, H. Mangyo, Y. Kobayashi, H. Ono, K. Ikenaga, Y. Yano, and K. Matsumoto, “Performance of InGaN/GaN light-emitting diodes grown using NH 3 with oxygen-containing impurities,” Jpn. J. Appl. Phys. 53(8), 081001 (2014).
[Crossref]

Yan, Q.

E. Kioupakis, Q. Yan, and C. G. Van De Walle, “Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes,” Appl. Phys. Lett. 101(23), 231107 (2012).
[Crossref]

Yang, H.

Yano, Y.

N. Okada, K. Tadatomo, K. Yamane, H. Mangyo, Y. Kobayashi, H. Ono, K. Ikenaga, Y. Yano, and K. Matsumoto, “Performance of InGaN/GaN light-emitting diodes grown using NH 3 with oxygen-containing impurities,” Jpn. J. Appl. Phys. 53(8), 081001 (2014).
[Crossref]

Yoshida, H.

T. Shioda, H. Yoshida, K. Tachibana, N. Sugiyama, and S. Nunoue, “Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate,” Phys. Status Solidi 209(3), 473–476 (2012).
[Crossref]

Appl. Phys. Express (2)

Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, “InGaN Light-Emitting Diodes on c -Face Sapphire Substrates in Green Gap Spectral Range,” Appl. Phys. Express 6(11), 111004 (2013).
[Crossref]

Appl. Phys. Lett. (7)

X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 72(6), 692–694 (1998).
[Crossref]

J. T. Chen, U. Forsberg, and E. Janzén, “Impact of residual carbon on two-dimensional electron gas properties in AlxGa1-xN/GaN heterostructure,” Appl. Phys. Lett. 102(19), 193506 (2013).
[Crossref] [PubMed]

K. Lekhal, B. Damilano, H. T. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès, and B. Gil, “Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission,” Appl. Phys. Lett. 106(14), 142101 (2015).
[Crossref]

A. David and M. J. Grundmann, “Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes,” Appl. Phys. Lett. 97(3), 033501 (2010).
[Crossref]

E. Kioupakis, Q. Yan, and C. G. Van De Walle, “Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes,” Appl. Phys. Lett. 101(23), 231107 (2012).
[Crossref]

S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures,” Appl. Phys. Lett. 69(27), 4188–4190 (1996).
[Crossref]

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Figures (5)

Fig. 1
Fig. 1

Cross-sectional schematic of the green LED structure.

Fig. 2
Fig. 2

HAADF-STEM image of green LED with a five period MQW. The inset shows higher magnification of one period of the active region containing an InGaN QW, an AlGaN interlayer, and a GaN barrier.

Fig. 3
Fig. 3

(a) Dependence of light output power and forward voltage on drive current for an LED with an active area of 0.1 mm2. (b) Dependence of external quantum efficiency on drive current.

Fig. 4
Fig. 4

(a) Electroluminescence peak wavelength at different current densities. (b) Normalized electroluminescence spectra of the green LED at 20 mA (20 A/cm2) and 100 mA.

Fig. 5
Fig. 5

Dependence of luminous flux and luminous efficacy on drive current.

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