R. N. Raman, S. G. Demos, N. Shen, E. Feigenbaum, R. A. Negres, S. Elhadj, A. M. Rubenchik, and M. J. Matthews, “Damage on fused silica optics caused by laser ablation of surface-bound microparticles,” Opt. Express 24(3), 2634–2647 (2016).
[Crossref]
[PubMed]
W. S. Brocklesby, “Progress in high average power ultrafast lasers,” Eur. Phys. J. Spec. Top. 224(13), 2529–2543 (2015).
[Crossref]
J. H. Yoo, J. B. In, C. Zheng, I. Sakellari, R. N. Raman, M. J. Matthews, S. Elhadj, and C. P. Grigoropoulos, “Directed dewetting of amorphous silicon film by a donut-shaped laser pulse,” Nanotechnology 26(16), 165303 (2015).
[Crossref]
[PubMed]
W. L. Wang, W. J. Yang, H. Y. Wang, and G. Q. Li, “Epitaxial growth of GaN films on unconventional oxide substrates,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(44), 9342–9358 (2014).
[Crossref]
M. A. Reshchikov, A. Usikov, H. Helava, and Y. Makarov, “Fine structure of the red luminescence band in undoped GaN,” Appl. Phys. Lett. 104(3), 032103 (2014).
[Crossref]
K. Mishchik, A. Ferrer, A. R. de la Cruz, A. Mermillod-Blondin, C. Mauclair, Y. Ouerdane, A. Boukenter, J. Solis, and R. Stoian, “Photoinscription domains for ultrafast laser writing of refractive index changes in BK7 borosilicate crown optical glass,” Opt. Mater. Express 3(1), 67–85 (2013).
[Crossref]
D. O. Demchenko, I. C. Diallo, and M. A. Reshchikov, “Yellow Luminescence of Gallium Nitride Generated by Carbon Defect Complexes,” Phys. Rev. Lett. 110(8), 087404 (2013).
[Crossref]
[PubMed]
S. Z. Xiao, E. L. Gurevich, and A. Ostendorf, “Incubation effect and its influence on laser patterning of ITO thin film,” Appl. Phys. Adv. Mater. 107, 333–338 (2012).
H. Wang, Z. Huang, D. Zhang, F. Luo, L. Huang, Y. Li, Y. Luo, W. Wang, and X. Zhao, “Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm,” J. Appl. Phys. 110(11), 113111 (2011).
[Crossref]
J. W. Tomm, M. Ziegler, M. Hempel, and T. Elsaesser, “Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers,” Laser Photonics Rev. 5(3), 422–441 (2011).
[Crossref]
P. E. Miller, J. D. Bude, T. I. Suratwala, N. Shen, T. A. Laurence, W. A. Steele, J. Menapace, M. D. Feit, and L. L. Wong, “Fracture-induced subbandgap absorption as a precursor to optical damage on fused silica surfaces,” Opt. Lett. 35(16), 2702–2704 (2010).
[Crossref]
[PubMed]
S. Nakashima, K. Sugioka, T. Ito, H. Takai, and K. Midorikawa, “Fabrication of periodic nano-hole array on GaN surface by fs laser for improvement of extraction efficiency in blue LED,” Phys. Procedia 5, 203–211 (2010).
[Crossref]
S. T. Yang, M. J. Matthews, S. Elhadj, V. G. Draggoo, and S. E. Bisson, “Thermal transport in CO2 laser irradiated fused silica: In situ measurements and analysis,” J. Appl. Phys. 106(10), 103106 (2009).
[Crossref]
W. J. Heward and D. J. Swenson, “Phase equilibria in the pseudo-binary In2O3-SnO2 system,” J. Mater. Sci. 42(17), 7135–7140 (2007).
[Crossref]
M. Batzill and U. Diebold, “The surface and materials science of tin oxide,” Prog. Surf. Sci. 79(2-4), 47–154 (2005).
[Crossref]
M. A. Reshchikov and H. Morkoc, “Luminescence properties of defects in GaN,” J. Appl. Phys. 97(6), 061301 (2005).
[Crossref]
D. A. Willis, “Thermal mechanisms of laser micromachining of indium tin oxide,” Photon. Process. Microelectron. Photon. III 5339, 313–320 (2004).
[Crossref]
S. Y. Karpov and Y. N. Makarov, “Dislocation effect on light emission efficiency in gallium nitride,” Appl. Phys. Lett. 81(25), 4721–4723 (2002).
[Crossref]
S. O. Kucheyev, M. Toth, M. R. Phillips, J. S. Williams, C. Jagadish, and G. Li, “Chemical origin of the yellow luminescence in GaN,” J. Appl. Phys. 91(9), 5867–5874 (2002).
[Crossref]
M. Kuball, J. M. Hayes, A. D. Prins, N. W. A. van Uden, D. J. Dunstan, Y. Shi, and J. H. Edgar, “Raman scattering studies on single-crystalline bulk AlN under high pressures,” Appl. Phys. Lett. 78(6), 724 (2001).
[Crossref]
M. Kuball, “Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control,” Surf. Interface Anal. 31(10), 987–999 (2001).
[Crossref]
M. Kuball, J. M. Hayes, A. D. Prins, N. W. A. van Uden, D. J. Dunstan, Y. Shi, and J. H. Edgar, “Raman scattering studies on single-crystalline bulk AlN under high pressures,” Appl. Phys. Lett. 78(6), 724–726 (2001).
[Crossref]
D. D. Koleske, A. E. Wickenden, R. L. Henry, J. C. Culbertson, and M. E. Twigg, “GaN decomposition in H2 and N2 at MOVPE temperatures and pressures,” J. Cryst. Growth 223(4), 466–483 (2001).
[Crossref]
R. Seemann, S. Herminghaus, and K. Jacobs, “Dewetting patterns and molecular forces: a reconciliation,” Phys. Rev. Lett. 86(24), 5534–5537 (2001).
[Crossref]
[PubMed]
T. Kim, H. S. Kim, M. Hetterich, D. Jones, J. M. Girkin, E. Bente, and M. D. Dawson, “Femtosecond laser machining of gallium nitride,” Mat. Sci. Eng. B-Solid 82(1-3), 262–264 (2001).
[Crossref]
P. G. Eliseev, S. Juodkazis, T. Sugahara, H.-B. Sun, S. Matsuo, S. Sakai, and H. Misawa, “GaN surface ablation by femtosecond pulses: atomic force microscopy studies and accumulation effects,” Proc. SPIE 4065, 546–556 (2000).
[Crossref]
P. G. Eliseev, H. B. Sun, S. Juodkazis, T. Sugahara, S. Sakai, and H. Misawa, “Laser-induced damage threshold and surface processing of GaN at 400 nm wavelength,” Jap. J.Appl. Phys. Part 2-Letters 38(Part 2, No. 7B), L839–L841 (1999).
[Crossref]
O. Yavas and M. Takai, “Effect of substrate absorption on the efficiency of laser patterning of indium tin oxide thin films,” J. Appl. Phys. 85(8), 4207–4212 (1999).
[Crossref]
J. Elsner, R. Jones, M. I. Heggie, P. K. Sitch, M. Haugk, T. Frauenheim, S. Oberg, and P. R. Briddon, “Deep acceptors trapped at threading-edge dislocations in GaN,” Phys. Rev. B 58(19), 12571–12574 (1998).
[Crossref]
I. H. Lee, I. H. Choi, C. R. Lee, E. J. Shin, D. Kim, S. K. Noh, S. J. Son, K. Y. Lim, and H. J. Lee, “Stress relaxation in Si-doped GaN studied by Raman spectroscopy,” J. Appl. Phys. 83(11), 5787–5791 (1998).
[Crossref]
D. C. Look and R. J. Molnar, “Degenerate layer at GaN/sapphire interface: Influence on hall-effect measurements,” Appl. Phys. Lett. 70(25), 3377–3379 (1997).
[Crossref]
C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54(24), 17745–17753 (1996).
[Crossref]
D. H. Zhang and H. L. Ma, “Scattering mechanisms of charge carriers in transparent conducting oxide films,” Appl. Phys. A-Matter 62, 487–492 (1996).
F. Y. Genin and C. J. Stolz, “Morphologies of laser-induced damage in hafnia-silica multilayer mirror and polarizer coatings,” Proc. SPIE 2870, 439–448 (1996).
[Crossref]
D. G. Neerinck and T. J. Vink, “Depth profiling of thin ITO films by grazing incidence X-ray diffraction,” Thin Solid Films 278(1-2), 12–17 (1996).
[Crossref]
R. K. Singh, “Transient plasma shielding effects during pulsed laser ablation of materials,” J. Electron. Mater. 25(1), 125–129 (1996).
[Crossref]
M. D. Drory, J. W. Ager, T. Suski, I. Grzegory, and S. Porowski, “Hardness and fracture toughness of bulk single crystal gallium nitride,” Appl. Phys. Lett. 69(26), 4044–4046 (1996).
[Crossref]
Y. Song, E. S. Kim, and A. Kapila, “Thermal-Stability of Sputter-Deposited Zno Thin-Films,” J. Electron. Mater. 24(2), 83–86 (1995).
[Crossref]
T. Kozawa, T. Kachi, H. Kano, H. Nagase, N. Koide, and K. Manabe, “Thermal-Stress in Gan Epitaxial Layers Grown on Sapphire Substrates,” J. Appl. Phys. 77(9), 4389–4392 (1995).
[Crossref]
A. Miotello, R. Kelly, B. Braren, and C. E. Otis, “Novel Geometrical Effects Observed in Debris When Polymers Are Laser Sputtered,” Appl. Phys. Lett. 61(23), 2784–2786 (1992).
[Crossref]
S. Ishibashi, Y. Higuchi, Y. Ota, and K. Nakamura, “Low Resistivity Indium Tin Oxide Transparent Conductive Films. 2. Effect of Sputtering Voltage on Electrical Property of Films,” J. Vac. Sci. Technol. A 8(3), 1403–1406 (1990).
[Crossref]
G. Koren and U. P. Oppenheim, “Laser Ablation of Polymers in Pressurized Gas Ambients,” Appl. Phys. B-Photo 42, 41–43 (1987).
W. T. Pawlewicz, I. B. Mann, W. H. Lowdermilk, and D. Milam, “Laser-Damage-Resistant Transparent Conductive Indium Tin Oxide Coatings,” Appl. Phys. Lett. 34(3), 196–198 (1979).
[Crossref]
H. Köstlin, R. Jost, and W. Lems, “Optical and Electrical Properties of Doped In2o3 Films,” Phys. Status Solidi, A Appl. Res. 29(1), 87–93 (1975).
[Crossref]
W. W. Mullins, “Flattening of a Nearly Plane Solid Surface Due to Capillarity,” J. Appl. Phys. 30(1), 77–83 (1959).
[Crossref]
M. D. Drory, J. W. Ager, T. Suski, I. Grzegory, and S. Porowski, “Hardness and fracture toughness of bulk single crystal gallium nitride,” Appl. Phys. Lett. 69(26), 4044–4046 (1996).
[Crossref]
C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54(24), 17745–17753 (1996).
[Crossref]
M. Batzill and U. Diebold, “The surface and materials science of tin oxide,” Prog. Surf. Sci. 79(2-4), 47–154 (2005).
[Crossref]
T. Kim, H. S. Kim, M. Hetterich, D. Jones, J. M. Girkin, E. Bente, and M. D. Dawson, “Femtosecond laser machining of gallium nitride,” Mat. Sci. Eng. B-Solid 82(1-3), 262–264 (2001).
[Crossref]
S. T. Yang, M. J. Matthews, S. Elhadj, V. G. Draggoo, and S. E. Bisson, “Thermal transport in CO2 laser irradiated fused silica: In situ measurements and analysis,” J. Appl. Phys. 106(10), 103106 (2009).
[Crossref]
K. Mishchik, A. Ferrer, A. R. de la Cruz, A. Mermillod-Blondin, C. Mauclair, Y. Ouerdane, A. Boukenter, J. Solis, and R. Stoian, “Photoinscription domains for ultrafast laser writing of refractive index changes in BK7 borosilicate crown optical glass,” Opt. Mater. Express 3(1), 67–85 (2013).
[Crossref]
A. Miotello, R. Kelly, B. Braren, and C. E. Otis, “Novel Geometrical Effects Observed in Debris When Polymers Are Laser Sputtered,” Appl. Phys. Lett. 61(23), 2784–2786 (1992).
[Crossref]
C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54(24), 17745–17753 (1996).
[Crossref]
J. Elsner, R. Jones, M. I. Heggie, P. K. Sitch, M. Haugk, T. Frauenheim, S. Oberg, and P. R. Briddon, “Deep acceptors trapped at threading-edge dislocations in GaN,” Phys. Rev. B 58(19), 12571–12574 (1998).
[Crossref]
W. S. Brocklesby, “Progress in high average power ultrafast lasers,” Eur. Phys. J. Spec. Top. 224(13), 2529–2543 (2015).
[Crossref]
P. E. Miller, J. D. Bude, T. I. Suratwala, N. Shen, T. A. Laurence, W. A. Steele, J. Menapace, M. D. Feit, and L. L. Wong, “Fracture-induced subbandgap absorption as a precursor to optical damage on fused silica surfaces,” Opt. Lett. 35(16), 2702–2704 (2010).
[Crossref]
[PubMed]
I. H. Lee, I. H. Choi, C. R. Lee, E. J. Shin, D. Kim, S. K. Noh, S. J. Son, K. Y. Lim, and H. J. Lee, “Stress relaxation in Si-doped GaN studied by Raman spectroscopy,” J. Appl. Phys. 83(11), 5787–5791 (1998).
[Crossref]
D. D. Koleske, A. E. Wickenden, R. L. Henry, J. C. Culbertson, and M. E. Twigg, “GaN decomposition in H2 and N2 at MOVPE temperatures and pressures,” J. Cryst. Growth 223(4), 466–483 (2001).
[Crossref]
C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54(24), 17745–17753 (1996).
[Crossref]
T. Kim, H. S. Kim, M. Hetterich, D. Jones, J. M. Girkin, E. Bente, and M. D. Dawson, “Femtosecond laser machining of gallium nitride,” Mat. Sci. Eng. B-Solid 82(1-3), 262–264 (2001).
[Crossref]
K. Mishchik, A. Ferrer, A. R. de la Cruz, A. Mermillod-Blondin, C. Mauclair, Y. Ouerdane, A. Boukenter, J. Solis, and R. Stoian, “Photoinscription domains for ultrafast laser writing of refractive index changes in BK7 borosilicate crown optical glass,” Opt. Mater. Express 3(1), 67–85 (2013).
[Crossref]
D. O. Demchenko, I. C. Diallo, and M. A. Reshchikov, “Yellow Luminescence of Gallium Nitride Generated by Carbon Defect Complexes,” Phys. Rev. Lett. 110(8), 087404 (2013).
[Crossref]
[PubMed]
R. N. Raman, S. G. Demos, N. Shen, E. Feigenbaum, R. A. Negres, S. Elhadj, A. M. Rubenchik, and M. J. Matthews, “Damage on fused silica optics caused by laser ablation of surface-bound microparticles,” Opt. Express 24(3), 2634–2647 (2016).
[Crossref]
[PubMed]
D. O. Demchenko, I. C. Diallo, and M. A. Reshchikov, “Yellow Luminescence of Gallium Nitride Generated by Carbon Defect Complexes,” Phys. Rev. Lett. 110(8), 087404 (2013).
[Crossref]
[PubMed]
M. Batzill and U. Diebold, “The surface and materials science of tin oxide,” Prog. Surf. Sci. 79(2-4), 47–154 (2005).
[Crossref]
S. T. Yang, M. J. Matthews, S. Elhadj, V. G. Draggoo, and S. E. Bisson, “Thermal transport in CO2 laser irradiated fused silica: In situ measurements and analysis,” J. Appl. Phys. 106(10), 103106 (2009).
[Crossref]
M. D. Drory, J. W. Ager, T. Suski, I. Grzegory, and S. Porowski, “Hardness and fracture toughness of bulk single crystal gallium nitride,” Appl. Phys. Lett. 69(26), 4044–4046 (1996).
[Crossref]
M. Kuball, J. M. Hayes, A. D. Prins, N. W. A. van Uden, D. J. Dunstan, Y. Shi, and J. H. Edgar, “Raman scattering studies on single-crystalline bulk AlN under high pressures,” Appl. Phys. Lett. 78(6), 724 (2001).
[Crossref]
M. Kuball, J. M. Hayes, A. D. Prins, N. W. A. van Uden, D. J. Dunstan, Y. Shi, and J. H. Edgar, “Raman scattering studies on single-crystalline bulk AlN under high pressures,” Appl. Phys. Lett. 78(6), 724–726 (2001).
[Crossref]
M. Kuball, J. M. Hayes, A. D. Prins, N. W. A. van Uden, D. J. Dunstan, Y. Shi, and J. H. Edgar, “Raman scattering studies on single-crystalline bulk AlN under high pressures,” Appl. Phys. Lett. 78(6), 724–726 (2001).
[Crossref]
M. Kuball, J. M. Hayes, A. D. Prins, N. W. A. van Uden, D. J. Dunstan, Y. Shi, and J. H. Edgar, “Raman scattering studies on single-crystalline bulk AlN under high pressures,” Appl. Phys. Lett. 78(6), 724 (2001).
[Crossref]
R. N. Raman, S. G. Demos, N. Shen, E. Feigenbaum, R. A. Negres, S. Elhadj, A. M. Rubenchik, and M. J. Matthews, “Damage on fused silica optics caused by laser ablation of surface-bound microparticles,” Opt. Express 24(3), 2634–2647 (2016).
[Crossref]
[PubMed]
J. H. Yoo, J. B. In, C. Zheng, I. Sakellari, R. N. Raman, M. J. Matthews, S. Elhadj, and C. P. Grigoropoulos, “Directed dewetting of amorphous silicon film by a donut-shaped laser pulse,” Nanotechnology 26(16), 165303 (2015).
[Crossref]
[PubMed]
S. T. Yang, M. J. Matthews, S. Elhadj, V. G. Draggoo, and S. E. Bisson, “Thermal transport in CO2 laser irradiated fused silica: In situ measurements and analysis,” J. Appl. Phys. 106(10), 103106 (2009).
[Crossref]
P. G. Eliseev, S. Juodkazis, T. Sugahara, H.-B. Sun, S. Matsuo, S. Sakai, and H. Misawa, “GaN surface ablation by femtosecond pulses: atomic force microscopy studies and accumulation effects,” Proc. SPIE 4065, 546–556 (2000).
[Crossref]
P. G. Eliseev, H. B. Sun, S. Juodkazis, T. Sugahara, S. Sakai, and H. Misawa, “Laser-induced damage threshold and surface processing of GaN at 400 nm wavelength,” Jap. J.Appl. Phys. Part 2-Letters 38(Part 2, No. 7B), L839–L841 (1999).
[Crossref]
J. W. Tomm, M. Ziegler, M. Hempel, and T. Elsaesser, “Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers,” Laser Photonics Rev. 5(3), 422–441 (2011).
[Crossref]
J. Elsner, R. Jones, M. I. Heggie, P. K. Sitch, M. Haugk, T. Frauenheim, S. Oberg, and P. R. Briddon, “Deep acceptors trapped at threading-edge dislocations in GaN,” Phys. Rev. B 58(19), 12571–12574 (1998).
[Crossref]
R. N. Raman, S. G. Demos, N. Shen, E. Feigenbaum, R. A. Negres, S. Elhadj, A. M. Rubenchik, and M. J. Matthews, “Damage on fused silica optics caused by laser ablation of surface-bound microparticles,” Opt. Express 24(3), 2634–2647 (2016).
[Crossref]
[PubMed]
P. E. Miller, J. D. Bude, T. I. Suratwala, N. Shen, T. A. Laurence, W. A. Steele, J. Menapace, M. D. Feit, and L. L. Wong, “Fracture-induced subbandgap absorption as a precursor to optical damage on fused silica surfaces,” Opt. Lett. 35(16), 2702–2704 (2010).
[Crossref]
[PubMed]
K. Mishchik, A. Ferrer, A. R. de la Cruz, A. Mermillod-Blondin, C. Mauclair, Y. Ouerdane, A. Boukenter, J. Solis, and R. Stoian, “Photoinscription domains for ultrafast laser writing of refractive index changes in BK7 borosilicate crown optical glass,” Opt. Mater. Express 3(1), 67–85 (2013).
[Crossref]
J. Elsner, R. Jones, M. I. Heggie, P. K. Sitch, M. Haugk, T. Frauenheim, S. Oberg, and P. R. Briddon, “Deep acceptors trapped at threading-edge dislocations in GaN,” Phys. Rev. B 58(19), 12571–12574 (1998).
[Crossref]
F. Y. Genin and C. J. Stolz, “Morphologies of laser-induced damage in hafnia-silica multilayer mirror and polarizer coatings,” Proc. SPIE 2870, 439–448 (1996).
[Crossref]
T. Kim, H. S. Kim, M. Hetterich, D. Jones, J. M. Girkin, E. Bente, and M. D. Dawson, “Femtosecond laser machining of gallium nitride,” Mat. Sci. Eng. B-Solid 82(1-3), 262–264 (2001).
[Crossref]
J. H. Yoo, J. B. In, C. Zheng, I. Sakellari, R. N. Raman, M. J. Matthews, S. Elhadj, and C. P. Grigoropoulos, “Directed dewetting of amorphous silicon film by a donut-shaped laser pulse,” Nanotechnology 26(16), 165303 (2015).
[Crossref]
[PubMed]
M. D. Drory, J. W. Ager, T. Suski, I. Grzegory, and S. Porowski, “Hardness and fracture toughness of bulk single crystal gallium nitride,” Appl. Phys. Lett. 69(26), 4044–4046 (1996).
[Crossref]
S. Z. Xiao, E. L. Gurevich, and A. Ostendorf, “Incubation effect and its influence on laser patterning of ITO thin film,” Appl. Phys. Adv. Mater. 107, 333–338 (2012).
J. Elsner, R. Jones, M. I. Heggie, P. K. Sitch, M. Haugk, T. Frauenheim, S. Oberg, and P. R. Briddon, “Deep acceptors trapped at threading-edge dislocations in GaN,” Phys. Rev. B 58(19), 12571–12574 (1998).
[Crossref]
M. Kuball, J. M. Hayes, A. D. Prins, N. W. A. van Uden, D. J. Dunstan, Y. Shi, and J. H. Edgar, “Raman scattering studies on single-crystalline bulk AlN under high pressures,” Appl. Phys. Lett. 78(6), 724 (2001).
[Crossref]
M. Kuball, J. M. Hayes, A. D. Prins, N. W. A. van Uden, D. J. Dunstan, Y. Shi, and J. H. Edgar, “Raman scattering studies on single-crystalline bulk AlN under high pressures,” Appl. Phys. Lett. 78(6), 724–726 (2001).
[Crossref]
J. Elsner, R. Jones, M. I. Heggie, P. K. Sitch, M. Haugk, T. Frauenheim, S. Oberg, and P. R. Briddon, “Deep acceptors trapped at threading-edge dislocations in GaN,” Phys. Rev. B 58(19), 12571–12574 (1998).
[Crossref]
M. A. Reshchikov, A. Usikov, H. Helava, and Y. Makarov, “Fine structure of the red luminescence band in undoped GaN,” Appl. Phys. Lett. 104(3), 032103 (2014).
[Crossref]
J. W. Tomm, M. Ziegler, M. Hempel, and T. Elsaesser, “Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers,” Laser Photonics Rev. 5(3), 422–441 (2011).
[Crossref]
D. D. Koleske, A. E. Wickenden, R. L. Henry, J. C. Culbertson, and M. E. Twigg, “GaN decomposition in H2 and N2 at MOVPE temperatures and pressures,” J. Cryst. Growth 223(4), 466–483 (2001).
[Crossref]
R. Seemann, S. Herminghaus, and K. Jacobs, “Dewetting patterns and molecular forces: a reconciliation,” Phys. Rev. Lett. 86(24), 5534–5537 (2001).
[Crossref]
[PubMed]
T. Kim, H. S. Kim, M. Hetterich, D. Jones, J. M. Girkin, E. Bente, and M. D. Dawson, “Femtosecond laser machining of gallium nitride,” Mat. Sci. Eng. B-Solid 82(1-3), 262–264 (2001).
[Crossref]
W. J. Heward and D. J. Swenson, “Phase equilibria in the pseudo-binary In2O3-SnO2 system,” J. Mater. Sci. 42(17), 7135–7140 (2007).
[Crossref]
S. Ishibashi, Y. Higuchi, Y. Ota, and K. Nakamura, “Low Resistivity Indium Tin Oxide Transparent Conductive Films. 2. Effect of Sputtering Voltage on Electrical Property of Films,” J. Vac. Sci. Technol. A 8(3), 1403–1406 (1990).
[Crossref]
H. Wang, Z. Huang, D. Zhang, F. Luo, L. Huang, Y. Li, Y. Luo, W. Wang, and X. Zhao, “Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm,” J. Appl. Phys. 110(11), 113111 (2011).
[Crossref]
H. Wang, Z. Huang, D. Zhang, F. Luo, L. Huang, Y. Li, Y. Luo, W. Wang, and X. Zhao, “Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm,” J. Appl. Phys. 110(11), 113111 (2011).
[Crossref]
J. H. Yoo, J. B. In, C. Zheng, I. Sakellari, R. N. Raman, M. J. Matthews, S. Elhadj, and C. P. Grigoropoulos, “Directed dewetting of amorphous silicon film by a donut-shaped laser pulse,” Nanotechnology 26(16), 165303 (2015).
[Crossref]
[PubMed]
S. Ishibashi, Y. Higuchi, Y. Ota, and K. Nakamura, “Low Resistivity Indium Tin Oxide Transparent Conductive Films. 2. Effect of Sputtering Voltage on Electrical Property of Films,” J. Vac. Sci. Technol. A 8(3), 1403–1406 (1990).
[Crossref]
S. Nakashima, K. Sugioka, T. Ito, H. Takai, and K. Midorikawa, “Fabrication of periodic nano-hole array on GaN surface by fs laser for improvement of extraction efficiency in blue LED,” Phys. Procedia 5, 203–211 (2010).
[Crossref]
R. Seemann, S. Herminghaus, and K. Jacobs, “Dewetting patterns and molecular forces: a reconciliation,” Phys. Rev. Lett. 86(24), 5534–5537 (2001).
[Crossref]
[PubMed]
S. O. Kucheyev, M. Toth, M. R. Phillips, J. S. Williams, C. Jagadish, and G. Li, “Chemical origin of the yellow luminescence in GaN,” J. Appl. Phys. 91(9), 5867–5874 (2002).
[Crossref]
T. Kim, H. S. Kim, M. Hetterich, D. Jones, J. M. Girkin, E. Bente, and M. D. Dawson, “Femtosecond laser machining of gallium nitride,” Mat. Sci. Eng. B-Solid 82(1-3), 262–264 (2001).
[Crossref]
C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54(24), 17745–17753 (1996).
[Crossref]
J. Elsner, R. Jones, M. I. Heggie, P. K. Sitch, M. Haugk, T. Frauenheim, S. Oberg, and P. R. Briddon, “Deep acceptors trapped at threading-edge dislocations in GaN,” Phys. Rev. B 58(19), 12571–12574 (1998).
[Crossref]
H. Köstlin, R. Jost, and W. Lems, “Optical and Electrical Properties of Doped In2o3 Films,” Phys. Status Solidi, A Appl. Res. 29(1), 87–93 (1975).
[Crossref]
P. G. Eliseev, S. Juodkazis, T. Sugahara, H.-B. Sun, S. Matsuo, S. Sakai, and H. Misawa, “GaN surface ablation by femtosecond pulses: atomic force microscopy studies and accumulation effects,” Proc. SPIE 4065, 546–556 (2000).
[Crossref]
P. G. Eliseev, H. B. Sun, S. Juodkazis, T. Sugahara, S. Sakai, and H. Misawa, “Laser-induced damage threshold and surface processing of GaN at 400 nm wavelength,” Jap. J.Appl. Phys. Part 2-Letters 38(Part 2, No. 7B), L839–L841 (1999).
[Crossref]
T. Kozawa, T. Kachi, H. Kano, H. Nagase, N. Koide, and K. Manabe, “Thermal-Stress in Gan Epitaxial Layers Grown on Sapphire Substrates,” J. Appl. Phys. 77(9), 4389–4392 (1995).
[Crossref]
T. Kozawa, T. Kachi, H. Kano, H. Nagase, N. Koide, and K. Manabe, “Thermal-Stress in Gan Epitaxial Layers Grown on Sapphire Substrates,” J. Appl. Phys. 77(9), 4389–4392 (1995).
[Crossref]
Y. Song, E. S. Kim, and A. Kapila, “Thermal-Stability of Sputter-Deposited Zno Thin-Films,” J. Electron. Mater. 24(2), 83–86 (1995).
[Crossref]
S. Y. Karpov and Y. N. Makarov, “Dislocation effect on light emission efficiency in gallium nitride,” Appl. Phys. Lett. 81(25), 4721–4723 (2002).
[Crossref]
A. Miotello, R. Kelly, B. Braren, and C. E. Otis, “Novel Geometrical Effects Observed in Debris When Polymers Are Laser Sputtered,” Appl. Phys. Lett. 61(23), 2784–2786 (1992).
[Crossref]
I. H. Lee, I. H. Choi, C. R. Lee, E. J. Shin, D. Kim, S. K. Noh, S. J. Son, K. Y. Lim, and H. J. Lee, “Stress relaxation in Si-doped GaN studied by Raman spectroscopy,” J. Appl. Phys. 83(11), 5787–5791 (1998).
[Crossref]
Y. Song, E. S. Kim, and A. Kapila, “Thermal-Stability of Sputter-Deposited Zno Thin-Films,” J. Electron. Mater. 24(2), 83–86 (1995).
[Crossref]
T. Kim, H. S. Kim, M. Hetterich, D. Jones, J. M. Girkin, E. Bente, and M. D. Dawson, “Femtosecond laser machining of gallium nitride,” Mat. Sci. Eng. B-Solid 82(1-3), 262–264 (2001).
[Crossref]
T. Kim, H. S. Kim, M. Hetterich, D. Jones, J. M. Girkin, E. Bente, and M. D. Dawson, “Femtosecond laser machining of gallium nitride,” Mat. Sci. Eng. B-Solid 82(1-3), 262–264 (2001).
[Crossref]
C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54(24), 17745–17753 (1996).
[Crossref]
T. Kozawa, T. Kachi, H. Kano, H. Nagase, N. Koide, and K. Manabe, “Thermal-Stress in Gan Epitaxial Layers Grown on Sapphire Substrates,” J. Appl. Phys. 77(9), 4389–4392 (1995).
[Crossref]
D. D. Koleske, A. E. Wickenden, R. L. Henry, J. C. Culbertson, and M. E. Twigg, “GaN decomposition in H2 and N2 at MOVPE temperatures and pressures,” J. Cryst. Growth 223(4), 466–483 (2001).
[Crossref]
G. Koren and U. P. Oppenheim, “Laser Ablation of Polymers in Pressurized Gas Ambients,” Appl. Phys. B-Photo 42, 41–43 (1987).
H. Köstlin, R. Jost, and W. Lems, “Optical and Electrical Properties of Doped In2o3 Films,” Phys. Status Solidi, A Appl. Res. 29(1), 87–93 (1975).
[Crossref]
T. Kozawa, T. Kachi, H. Kano, H. Nagase, N. Koide, and K. Manabe, “Thermal-Stress in Gan Epitaxial Layers Grown on Sapphire Substrates,” J. Appl. Phys. 77(9), 4389–4392 (1995).
[Crossref]
C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54(24), 17745–17753 (1996).
[Crossref]
M. Kuball, J. M. Hayes, A. D. Prins, N. W. A. van Uden, D. J. Dunstan, Y. Shi, and J. H. Edgar, “Raman scattering studies on single-crystalline bulk AlN under high pressures,” Appl. Phys. Lett. 78(6), 724–726 (2001).
[Crossref]
M. Kuball, J. M. Hayes, A. D. Prins, N. W. A. van Uden, D. J. Dunstan, Y. Shi, and J. H. Edgar, “Raman scattering studies on single-crystalline bulk AlN under high pressures,” Appl. Phys. Lett. 78(6), 724 (2001).
[Crossref]
M. Kuball, “Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control,” Surf. Interface Anal. 31(10), 987–999 (2001).
[Crossref]
S. O. Kucheyev, M. Toth, M. R. Phillips, J. S. Williams, C. Jagadish, and G. Li, “Chemical origin of the yellow luminescence in GaN,” J. Appl. Phys. 91(9), 5867–5874 (2002).
[Crossref]
P. E. Miller, J. D. Bude, T. I. Suratwala, N. Shen, T. A. Laurence, W. A. Steele, J. Menapace, M. D. Feit, and L. L. Wong, “Fracture-induced subbandgap absorption as a precursor to optical damage on fused silica surfaces,” Opt. Lett. 35(16), 2702–2704 (2010).
[Crossref]
[PubMed]
I. H. Lee, I. H. Choi, C. R. Lee, E. J. Shin, D. Kim, S. K. Noh, S. J. Son, K. Y. Lim, and H. J. Lee, “Stress relaxation in Si-doped GaN studied by Raman spectroscopy,” J. Appl. Phys. 83(11), 5787–5791 (1998).
[Crossref]
I. H. Lee, I. H. Choi, C. R. Lee, E. J. Shin, D. Kim, S. K. Noh, S. J. Son, K. Y. Lim, and H. J. Lee, “Stress relaxation in Si-doped GaN studied by Raman spectroscopy,” J. Appl. Phys. 83(11), 5787–5791 (1998).
[Crossref]
I. H. Lee, I. H. Choi, C. R. Lee, E. J. Shin, D. Kim, S. K. Noh, S. J. Son, K. Y. Lim, and H. J. Lee, “Stress relaxation in Si-doped GaN studied by Raman spectroscopy,” J. Appl. Phys. 83(11), 5787–5791 (1998).
[Crossref]
H. Köstlin, R. Jost, and W. Lems, “Optical and Electrical Properties of Doped In2o3 Films,” Phys. Status Solidi, A Appl. Res. 29(1), 87–93 (1975).
[Crossref]
S. O. Kucheyev, M. Toth, M. R. Phillips, J. S. Williams, C. Jagadish, and G. Li, “Chemical origin of the yellow luminescence in GaN,” J. Appl. Phys. 91(9), 5867–5874 (2002).
[Crossref]
W. L. Wang, W. J. Yang, H. Y. Wang, and G. Q. Li, “Epitaxial growth of GaN films on unconventional oxide substrates,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(44), 9342–9358 (2014).
[Crossref]
H. Wang, Z. Huang, D. Zhang, F. Luo, L. Huang, Y. Li, Y. Luo, W. Wang, and X. Zhao, “Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm,” J. Appl. Phys. 110(11), 113111 (2011).
[Crossref]
C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54(24), 17745–17753 (1996).
[Crossref]
I. H. Lee, I. H. Choi, C. R. Lee, E. J. Shin, D. Kim, S. K. Noh, S. J. Son, K. Y. Lim, and H. J. Lee, “Stress relaxation in Si-doped GaN studied by Raman spectroscopy,” J. Appl. Phys. 83(11), 5787–5791 (1998).
[Crossref]
D. C. Look and R. J. Molnar, “Degenerate layer at GaN/sapphire interface: Influence on hall-effect measurements,” Appl. Phys. Lett. 70(25), 3377–3379 (1997).
[Crossref]
W. T. Pawlewicz, I. B. Mann, W. H. Lowdermilk, and D. Milam, “Laser-Damage-Resistant Transparent Conductive Indium Tin Oxide Coatings,” Appl. Phys. Lett. 34(3), 196–198 (1979).
[Crossref]
H. Wang, Z. Huang, D. Zhang, F. Luo, L. Huang, Y. Li, Y. Luo, W. Wang, and X. Zhao, “Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm,” J. Appl. Phys. 110(11), 113111 (2011).
[Crossref]
H. Wang, Z. Huang, D. Zhang, F. Luo, L. Huang, Y. Li, Y. Luo, W. Wang, and X. Zhao, “Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm,” J. Appl. Phys. 110(11), 113111 (2011).
[Crossref]
D. H. Zhang and H. L. Ma, “Scattering mechanisms of charge carriers in transparent conducting oxide films,” Appl. Phys. A-Matter 62, 487–492 (1996).
M. A. Reshchikov, A. Usikov, H. Helava, and Y. Makarov, “Fine structure of the red luminescence band in undoped GaN,” Appl. Phys. Lett. 104(3), 032103 (2014).
[Crossref]
S. Y. Karpov and Y. N. Makarov, “Dislocation effect on light emission efficiency in gallium nitride,” Appl. Phys. Lett. 81(25), 4721–4723 (2002).
[Crossref]
T. Kozawa, T. Kachi, H. Kano, H. Nagase, N. Koide, and K. Manabe, “Thermal-Stress in Gan Epitaxial Layers Grown on Sapphire Substrates,” J. Appl. Phys. 77(9), 4389–4392 (1995).
[Crossref]
W. T. Pawlewicz, I. B. Mann, W. H. Lowdermilk, and D. Milam, “Laser-Damage-Resistant Transparent Conductive Indium Tin Oxide Coatings,” Appl. Phys. Lett. 34(3), 196–198 (1979).
[Crossref]
P. G. Eliseev, S. Juodkazis, T. Sugahara, H.-B. Sun, S. Matsuo, S. Sakai, and H. Misawa, “GaN surface ablation by femtosecond pulses: atomic force microscopy studies and accumulation effects,” Proc. SPIE 4065, 546–556 (2000).
[Crossref]
R. N. Raman, S. G. Demos, N. Shen, E. Feigenbaum, R. A. Negres, S. Elhadj, A. M. Rubenchik, and M. J. Matthews, “Damage on fused silica optics caused by laser ablation of surface-bound microparticles,” Opt. Express 24(3), 2634–2647 (2016).
[Crossref]
[PubMed]
J. H. Yoo, J. B. In, C. Zheng, I. Sakellari, R. N. Raman, M. J. Matthews, S. Elhadj, and C. P. Grigoropoulos, “Directed dewetting of amorphous silicon film by a donut-shaped laser pulse,” Nanotechnology 26(16), 165303 (2015).
[Crossref]
[PubMed]
S. T. Yang, M. J. Matthews, S. Elhadj, V. G. Draggoo, and S. E. Bisson, “Thermal transport in CO2 laser irradiated fused silica: In situ measurements and analysis,” J. Appl. Phys. 106(10), 103106 (2009).
[Crossref]
K. Mishchik, A. Ferrer, A. R. de la Cruz, A. Mermillod-Blondin, C. Mauclair, Y. Ouerdane, A. Boukenter, J. Solis, and R. Stoian, “Photoinscription domains for ultrafast laser writing of refractive index changes in BK7 borosilicate crown optical glass,” Opt. Mater. Express 3(1), 67–85 (2013).
[Crossref]
P. E. Miller, J. D. Bude, T. I. Suratwala, N. Shen, T. A. Laurence, W. A. Steele, J. Menapace, M. D. Feit, and L. L. Wong, “Fracture-induced subbandgap absorption as a precursor to optical damage on fused silica surfaces,” Opt. Lett. 35(16), 2702–2704 (2010).
[Crossref]
[PubMed]
K. Mishchik, A. Ferrer, A. R. de la Cruz, A. Mermillod-Blondin, C. Mauclair, Y. Ouerdane, A. Boukenter, J. Solis, and R. Stoian, “Photoinscription domains for ultrafast laser writing of refractive index changes in BK7 borosilicate crown optical glass,” Opt. Mater. Express 3(1), 67–85 (2013).
[Crossref]
S. Nakashima, K. Sugioka, T. Ito, H. Takai, and K. Midorikawa, “Fabrication of periodic nano-hole array on GaN surface by fs laser for improvement of extraction efficiency in blue LED,” Phys. Procedia 5, 203–211 (2010).
[Crossref]
W. T. Pawlewicz, I. B. Mann, W. H. Lowdermilk, and D. Milam, “Laser-Damage-Resistant Transparent Conductive Indium Tin Oxide Coatings,” Appl. Phys. Lett. 34(3), 196–198 (1979).
[Crossref]
P. E. Miller, J. D. Bude, T. I. Suratwala, N. Shen, T. A. Laurence, W. A. Steele, J. Menapace, M. D. Feit, and L. L. Wong, “Fracture-induced subbandgap absorption as a precursor to optical damage on fused silica surfaces,” Opt. Lett. 35(16), 2702–2704 (2010).
[Crossref]
[PubMed]
A. Miotello, R. Kelly, B. Braren, and C. E. Otis, “Novel Geometrical Effects Observed in Debris When Polymers Are Laser Sputtered,” Appl. Phys. Lett. 61(23), 2784–2786 (1992).
[Crossref]
P. G. Eliseev, S. Juodkazis, T. Sugahara, H.-B. Sun, S. Matsuo, S. Sakai, and H. Misawa, “GaN surface ablation by femtosecond pulses: atomic force microscopy studies and accumulation effects,” Proc. SPIE 4065, 546–556 (2000).
[Crossref]
P. G. Eliseev, H. B. Sun, S. Juodkazis, T. Sugahara, S. Sakai, and H. Misawa, “Laser-induced damage threshold and surface processing of GaN at 400 nm wavelength,” Jap. J.Appl. Phys. Part 2-Letters 38(Part 2, No. 7B), L839–L841 (1999).
[Crossref]
K. Mishchik, A. Ferrer, A. R. de la Cruz, A. Mermillod-Blondin, C. Mauclair, Y. Ouerdane, A. Boukenter, J. Solis, and R. Stoian, “Photoinscription domains for ultrafast laser writing of refractive index changes in BK7 borosilicate crown optical glass,” Opt. Mater. Express 3(1), 67–85 (2013).
[Crossref]
D. C. Look and R. J. Molnar, “Degenerate layer at GaN/sapphire interface: Influence on hall-effect measurements,” Appl. Phys. Lett. 70(25), 3377–3379 (1997).
[Crossref]
M. A. Reshchikov and H. Morkoc, “Luminescence properties of defects in GaN,” J. Appl. Phys. 97(6), 061301 (2005).
[Crossref]
W. W. Mullins, “Flattening of a Nearly Plane Solid Surface Due to Capillarity,” J. Appl. Phys. 30(1), 77–83 (1959).
[Crossref]
T. Kozawa, T. Kachi, H. Kano, H. Nagase, N. Koide, and K. Manabe, “Thermal-Stress in Gan Epitaxial Layers Grown on Sapphire Substrates,” J. Appl. Phys. 77(9), 4389–4392 (1995).
[Crossref]
S. Ishibashi, Y. Higuchi, Y. Ota, and K. Nakamura, “Low Resistivity Indium Tin Oxide Transparent Conductive Films. 2. Effect of Sputtering Voltage on Electrical Property of Films,” J. Vac. Sci. Technol. A 8(3), 1403–1406 (1990).
[Crossref]
S. Nakashima, K. Sugioka, T. Ito, H. Takai, and K. Midorikawa, “Fabrication of periodic nano-hole array on GaN surface by fs laser for improvement of extraction efficiency in blue LED,” Phys. Procedia 5, 203–211 (2010).
[Crossref]
D. G. Neerinck and T. J. Vink, “Depth profiling of thin ITO films by grazing incidence X-ray diffraction,” Thin Solid Films 278(1-2), 12–17 (1996).
[Crossref]
R. N. Raman, S. G. Demos, N. Shen, E. Feigenbaum, R. A. Negres, S. Elhadj, A. M. Rubenchik, and M. J. Matthews, “Damage on fused silica optics caused by laser ablation of surface-bound microparticles,” Opt. Express 24(3), 2634–2647 (2016).
[Crossref]
[PubMed]
I. H. Lee, I. H. Choi, C. R. Lee, E. J. Shin, D. Kim, S. K. Noh, S. J. Son, K. Y. Lim, and H. J. Lee, “Stress relaxation in Si-doped GaN studied by Raman spectroscopy,” J. Appl. Phys. 83(11), 5787–5791 (1998).
[Crossref]
J. Elsner, R. Jones, M. I. Heggie, P. K. Sitch, M. Haugk, T. Frauenheim, S. Oberg, and P. R. Briddon, “Deep acceptors trapped at threading-edge dislocations in GaN,” Phys. Rev. B 58(19), 12571–12574 (1998).
[Crossref]
G. Koren and U. P. Oppenheim, “Laser Ablation of Polymers in Pressurized Gas Ambients,” Appl. Phys. B-Photo 42, 41–43 (1987).
S. Z. Xiao, E. L. Gurevich, and A. Ostendorf, “Incubation effect and its influence on laser patterning of ITO thin film,” Appl. Phys. Adv. Mater. 107, 333–338 (2012).
S. Ishibashi, Y. Higuchi, Y. Ota, and K. Nakamura, “Low Resistivity Indium Tin Oxide Transparent Conductive Films. 2. Effect of Sputtering Voltage on Electrical Property of Films,” J. Vac. Sci. Technol. A 8(3), 1403–1406 (1990).
[Crossref]
A. Miotello, R. Kelly, B. Braren, and C. E. Otis, “Novel Geometrical Effects Observed in Debris When Polymers Are Laser Sputtered,” Appl. Phys. Lett. 61(23), 2784–2786 (1992).
[Crossref]
K. Mishchik, A. Ferrer, A. R. de la Cruz, A. Mermillod-Blondin, C. Mauclair, Y. Ouerdane, A. Boukenter, J. Solis, and R. Stoian, “Photoinscription domains for ultrafast laser writing of refractive index changes in BK7 borosilicate crown optical glass,” Opt. Mater. Express 3(1), 67–85 (2013).
[Crossref]
W. T. Pawlewicz, I. B. Mann, W. H. Lowdermilk, and D. Milam, “Laser-Damage-Resistant Transparent Conductive Indium Tin Oxide Coatings,” Appl. Phys. Lett. 34(3), 196–198 (1979).
[Crossref]
S. O. Kucheyev, M. Toth, M. R. Phillips, J. S. Williams, C. Jagadish, and G. Li, “Chemical origin of the yellow luminescence in GaN,” J. Appl. Phys. 91(9), 5867–5874 (2002).
[Crossref]
M. D. Drory, J. W. Ager, T. Suski, I. Grzegory, and S. Porowski, “Hardness and fracture toughness of bulk single crystal gallium nitride,” Appl. Phys. Lett. 69(26), 4044–4046 (1996).
[Crossref]
M. Kuball, J. M. Hayes, A. D. Prins, N. W. A. van Uden, D. J. Dunstan, Y. Shi, and J. H. Edgar, “Raman scattering studies on single-crystalline bulk AlN under high pressures,” Appl. Phys. Lett. 78(6), 724 (2001).
[Crossref]
M. Kuball, J. M. Hayes, A. D. Prins, N. W. A. van Uden, D. J. Dunstan, Y. Shi, and J. H. Edgar, “Raman scattering studies on single-crystalline bulk AlN under high pressures,” Appl. Phys. Lett. 78(6), 724–726 (2001).
[Crossref]
R. N. Raman, S. G. Demos, N. Shen, E. Feigenbaum, R. A. Negres, S. Elhadj, A. M. Rubenchik, and M. J. Matthews, “Damage on fused silica optics caused by laser ablation of surface-bound microparticles,” Opt. Express 24(3), 2634–2647 (2016).
[Crossref]
[PubMed]
J. H. Yoo, J. B. In, C. Zheng, I. Sakellari, R. N. Raman, M. J. Matthews, S. Elhadj, and C. P. Grigoropoulos, “Directed dewetting of amorphous silicon film by a donut-shaped laser pulse,” Nanotechnology 26(16), 165303 (2015).
[Crossref]
[PubMed]
M. A. Reshchikov, A. Usikov, H. Helava, and Y. Makarov, “Fine structure of the red luminescence band in undoped GaN,” Appl. Phys. Lett. 104(3), 032103 (2014).
[Crossref]
D. O. Demchenko, I. C. Diallo, and M. A. Reshchikov, “Yellow Luminescence of Gallium Nitride Generated by Carbon Defect Complexes,” Phys. Rev. Lett. 110(8), 087404 (2013).
[Crossref]
[PubMed]
M. A. Reshchikov and H. Morkoc, “Luminescence properties of defects in GaN,” J. Appl. Phys. 97(6), 061301 (2005).
[Crossref]
R. N. Raman, S. G. Demos, N. Shen, E. Feigenbaum, R. A. Negres, S. Elhadj, A. M. Rubenchik, and M. J. Matthews, “Damage on fused silica optics caused by laser ablation of surface-bound microparticles,” Opt. Express 24(3), 2634–2647 (2016).
[Crossref]
[PubMed]
C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54(24), 17745–17753 (1996).
[Crossref]
C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54(24), 17745–17753 (1996).
[Crossref]
P. G. Eliseev, S. Juodkazis, T. Sugahara, H.-B. Sun, S. Matsuo, S. Sakai, and H. Misawa, “GaN surface ablation by femtosecond pulses: atomic force microscopy studies and accumulation effects,” Proc. SPIE 4065, 546–556 (2000).
[Crossref]
P. G. Eliseev, H. B. Sun, S. Juodkazis, T. Sugahara, S. Sakai, and H. Misawa, “Laser-induced damage threshold and surface processing of GaN at 400 nm wavelength,” Jap. J.Appl. Phys. Part 2-Letters 38(Part 2, No. 7B), L839–L841 (1999).
[Crossref]
J. H. Yoo, J. B. In, C. Zheng, I. Sakellari, R. N. Raman, M. J. Matthews, S. Elhadj, and C. P. Grigoropoulos, “Directed dewetting of amorphous silicon film by a donut-shaped laser pulse,” Nanotechnology 26(16), 165303 (2015).
[Crossref]
[PubMed]
R. Seemann, S. Herminghaus, and K. Jacobs, “Dewetting patterns and molecular forces: a reconciliation,” Phys. Rev. Lett. 86(24), 5534–5537 (2001).
[Crossref]
[PubMed]
R. N. Raman, S. G. Demos, N. Shen, E. Feigenbaum, R. A. Negres, S. Elhadj, A. M. Rubenchik, and M. J. Matthews, “Damage on fused silica optics caused by laser ablation of surface-bound microparticles,” Opt. Express 24(3), 2634–2647 (2016).
[Crossref]
[PubMed]
P. E. Miller, J. D. Bude, T. I. Suratwala, N. Shen, T. A. Laurence, W. A. Steele, J. Menapace, M. D. Feit, and L. L. Wong, “Fracture-induced subbandgap absorption as a precursor to optical damage on fused silica surfaces,” Opt. Lett. 35(16), 2702–2704 (2010).
[Crossref]
[PubMed]
M. Kuball, J. M. Hayes, A. D. Prins, N. W. A. van Uden, D. J. Dunstan, Y. Shi, and J. H. Edgar, “Raman scattering studies on single-crystalline bulk AlN under high pressures,” Appl. Phys. Lett. 78(6), 724–726 (2001).
[Crossref]
M. Kuball, J. M. Hayes, A. D. Prins, N. W. A. van Uden, D. J. Dunstan, Y. Shi, and J. H. Edgar, “Raman scattering studies on single-crystalline bulk AlN under high pressures,” Appl. Phys. Lett. 78(6), 724 (2001).
[Crossref]
I. H. Lee, I. H. Choi, C. R. Lee, E. J. Shin, D. Kim, S. K. Noh, S. J. Son, K. Y. Lim, and H. J. Lee, “Stress relaxation in Si-doped GaN studied by Raman spectroscopy,” J. Appl. Phys. 83(11), 5787–5791 (1998).
[Crossref]
R. K. Singh, “Transient plasma shielding effects during pulsed laser ablation of materials,” J. Electron. Mater. 25(1), 125–129 (1996).
[Crossref]
J. Elsner, R. Jones, M. I. Heggie, P. K. Sitch, M. Haugk, T. Frauenheim, S. Oberg, and P. R. Briddon, “Deep acceptors trapped at threading-edge dislocations in GaN,” Phys. Rev. B 58(19), 12571–12574 (1998).
[Crossref]
K. Mishchik, A. Ferrer, A. R. de la Cruz, A. Mermillod-Blondin, C. Mauclair, Y. Ouerdane, A. Boukenter, J. Solis, and R. Stoian, “Photoinscription domains for ultrafast laser writing of refractive index changes in BK7 borosilicate crown optical glass,” Opt. Mater. Express 3(1), 67–85 (2013).
[Crossref]
I. H. Lee, I. H. Choi, C. R. Lee, E. J. Shin, D. Kim, S. K. Noh, S. J. Son, K. Y. Lim, and H. J. Lee, “Stress relaxation in Si-doped GaN studied by Raman spectroscopy,” J. Appl. Phys. 83(11), 5787–5791 (1998).
[Crossref]
Y. Song, E. S. Kim, and A. Kapila, “Thermal-Stability of Sputter-Deposited Zno Thin-Films,” J. Electron. Mater. 24(2), 83–86 (1995).
[Crossref]
P. E. Miller, J. D. Bude, T. I. Suratwala, N. Shen, T. A. Laurence, W. A. Steele, J. Menapace, M. D. Feit, and L. L. Wong, “Fracture-induced subbandgap absorption as a precursor to optical damage on fused silica surfaces,” Opt. Lett. 35(16), 2702–2704 (2010).
[Crossref]
[PubMed]
K. Mishchik, A. Ferrer, A. R. de la Cruz, A. Mermillod-Blondin, C. Mauclair, Y. Ouerdane, A. Boukenter, J. Solis, and R. Stoian, “Photoinscription domains for ultrafast laser writing of refractive index changes in BK7 borosilicate crown optical glass,” Opt. Mater. Express 3(1), 67–85 (2013).
[Crossref]
F. Y. Genin and C. J. Stolz, “Morphologies of laser-induced damage in hafnia-silica multilayer mirror and polarizer coatings,” Proc. SPIE 2870, 439–448 (1996).
[Crossref]
P. G. Eliseev, S. Juodkazis, T. Sugahara, H.-B. Sun, S. Matsuo, S. Sakai, and H. Misawa, “GaN surface ablation by femtosecond pulses: atomic force microscopy studies and accumulation effects,” Proc. SPIE 4065, 546–556 (2000).
[Crossref]
P. G. Eliseev, H. B. Sun, S. Juodkazis, T. Sugahara, S. Sakai, and H. Misawa, “Laser-induced damage threshold and surface processing of GaN at 400 nm wavelength,” Jap. J.Appl. Phys. Part 2-Letters 38(Part 2, No. 7B), L839–L841 (1999).
[Crossref]
S. Nakashima, K. Sugioka, T. Ito, H. Takai, and K. Midorikawa, “Fabrication of periodic nano-hole array on GaN surface by fs laser for improvement of extraction efficiency in blue LED,” Phys. Procedia 5, 203–211 (2010).
[Crossref]
P. G. Eliseev, H. B. Sun, S. Juodkazis, T. Sugahara, S. Sakai, and H. Misawa, “Laser-induced damage threshold and surface processing of GaN at 400 nm wavelength,” Jap. J.Appl. Phys. Part 2-Letters 38(Part 2, No. 7B), L839–L841 (1999).
[Crossref]
P. G. Eliseev, S. Juodkazis, T. Sugahara, H.-B. Sun, S. Matsuo, S. Sakai, and H. Misawa, “GaN surface ablation by femtosecond pulses: atomic force microscopy studies and accumulation effects,” Proc. SPIE 4065, 546–556 (2000).
[Crossref]
P. E. Miller, J. D. Bude, T. I. Suratwala, N. Shen, T. A. Laurence, W. A. Steele, J. Menapace, M. D. Feit, and L. L. Wong, “Fracture-induced subbandgap absorption as a precursor to optical damage on fused silica surfaces,” Opt. Lett. 35(16), 2702–2704 (2010).
[Crossref]
[PubMed]
C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54(24), 17745–17753 (1996).
[Crossref]
M. D. Drory, J. W. Ager, T. Suski, I. Grzegory, and S. Porowski, “Hardness and fracture toughness of bulk single crystal gallium nitride,” Appl. Phys. Lett. 69(26), 4044–4046 (1996).
[Crossref]
W. J. Heward and D. J. Swenson, “Phase equilibria in the pseudo-binary In2O3-SnO2 system,” J. Mater. Sci. 42(17), 7135–7140 (2007).
[Crossref]
S. Nakashima, K. Sugioka, T. Ito, H. Takai, and K. Midorikawa, “Fabrication of periodic nano-hole array on GaN surface by fs laser for improvement of extraction efficiency in blue LED,” Phys. Procedia 5, 203–211 (2010).
[Crossref]
O. Yavas and M. Takai, “Effect of substrate absorption on the efficiency of laser patterning of indium tin oxide thin films,” J. Appl. Phys. 85(8), 4207–4212 (1999).
[Crossref]
J. W. Tomm, M. Ziegler, M. Hempel, and T. Elsaesser, “Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers,” Laser Photonics Rev. 5(3), 422–441 (2011).
[Crossref]
S. O. Kucheyev, M. Toth, M. R. Phillips, J. S. Williams, C. Jagadish, and G. Li, “Chemical origin of the yellow luminescence in GaN,” J. Appl. Phys. 91(9), 5867–5874 (2002).
[Crossref]
D. D. Koleske, A. E. Wickenden, R. L. Henry, J. C. Culbertson, and M. E. Twigg, “GaN decomposition in H2 and N2 at MOVPE temperatures and pressures,” J. Cryst. Growth 223(4), 466–483 (2001).
[Crossref]
M. A. Reshchikov, A. Usikov, H. Helava, and Y. Makarov, “Fine structure of the red luminescence band in undoped GaN,” Appl. Phys. Lett. 104(3), 032103 (2014).
[Crossref]
M. Kuball, J. M. Hayes, A. D. Prins, N. W. A. van Uden, D. J. Dunstan, Y. Shi, and J. H. Edgar, “Raman scattering studies on single-crystalline bulk AlN under high pressures,” Appl. Phys. Lett. 78(6), 724 (2001).
[Crossref]
M. Kuball, J. M. Hayes, A. D. Prins, N. W. A. van Uden, D. J. Dunstan, Y. Shi, and J. H. Edgar, “Raman scattering studies on single-crystalline bulk AlN under high pressures,” Appl. Phys. Lett. 78(6), 724–726 (2001).
[Crossref]
D. G. Neerinck and T. J. Vink, “Depth profiling of thin ITO films by grazing incidence X-ray diffraction,” Thin Solid Films 278(1-2), 12–17 (1996).
[Crossref]
H. Wang, Z. Huang, D. Zhang, F. Luo, L. Huang, Y. Li, Y. Luo, W. Wang, and X. Zhao, “Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm,” J. Appl. Phys. 110(11), 113111 (2011).
[Crossref]
W. L. Wang, W. J. Yang, H. Y. Wang, and G. Q. Li, “Epitaxial growth of GaN films on unconventional oxide substrates,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(44), 9342–9358 (2014).
[Crossref]
H. Wang, Z. Huang, D. Zhang, F. Luo, L. Huang, Y. Li, Y. Luo, W. Wang, and X. Zhao, “Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm,” J. Appl. Phys. 110(11), 113111 (2011).
[Crossref]
W. L. Wang, W. J. Yang, H. Y. Wang, and G. Q. Li, “Epitaxial growth of GaN films on unconventional oxide substrates,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(44), 9342–9358 (2014).
[Crossref]
C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54(24), 17745–17753 (1996).
[Crossref]
D. D. Koleske, A. E. Wickenden, R. L. Henry, J. C. Culbertson, and M. E. Twigg, “GaN decomposition in H2 and N2 at MOVPE temperatures and pressures,” J. Cryst. Growth 223(4), 466–483 (2001).
[Crossref]
S. O. Kucheyev, M. Toth, M. R. Phillips, J. S. Williams, C. Jagadish, and G. Li, “Chemical origin of the yellow luminescence in GaN,” J. Appl. Phys. 91(9), 5867–5874 (2002).
[Crossref]
D. A. Willis, “Thermal mechanisms of laser micromachining of indium tin oxide,” Photon. Process. Microelectron. Photon. III 5339, 313–320 (2004).
[Crossref]
P. E. Miller, J. D. Bude, T. I. Suratwala, N. Shen, T. A. Laurence, W. A. Steele, J. Menapace, M. D. Feit, and L. L. Wong, “Fracture-induced subbandgap absorption as a precursor to optical damage on fused silica surfaces,” Opt. Lett. 35(16), 2702–2704 (2010).
[Crossref]
[PubMed]
S. Z. Xiao, E. L. Gurevich, and A. Ostendorf, “Incubation effect and its influence on laser patterning of ITO thin film,” Appl. Phys. Adv. Mater. 107, 333–338 (2012).
S. T. Yang, M. J. Matthews, S. Elhadj, V. G. Draggoo, and S. E. Bisson, “Thermal transport in CO2 laser irradiated fused silica: In situ measurements and analysis,” J. Appl. Phys. 106(10), 103106 (2009).
[Crossref]
W. L. Wang, W. J. Yang, H. Y. Wang, and G. Q. Li, “Epitaxial growth of GaN films on unconventional oxide substrates,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(44), 9342–9358 (2014).
[Crossref]
O. Yavas and M. Takai, “Effect of substrate absorption on the efficiency of laser patterning of indium tin oxide thin films,” J. Appl. Phys. 85(8), 4207–4212 (1999).
[Crossref]
J. H. Yoo, J. B. In, C. Zheng, I. Sakellari, R. N. Raman, M. J. Matthews, S. Elhadj, and C. P. Grigoropoulos, “Directed dewetting of amorphous silicon film by a donut-shaped laser pulse,” Nanotechnology 26(16), 165303 (2015).
[Crossref]
[PubMed]
H. Wang, Z. Huang, D. Zhang, F. Luo, L. Huang, Y. Li, Y. Luo, W. Wang, and X. Zhao, “Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm,” J. Appl. Phys. 110(11), 113111 (2011).
[Crossref]
D. H. Zhang and H. L. Ma, “Scattering mechanisms of charge carriers in transparent conducting oxide films,” Appl. Phys. A-Matter 62, 487–492 (1996).
H. Wang, Z. Huang, D. Zhang, F. Luo, L. Huang, Y. Li, Y. Luo, W. Wang, and X. Zhao, “Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm,” J. Appl. Phys. 110(11), 113111 (2011).
[Crossref]
J. H. Yoo, J. B. In, C. Zheng, I. Sakellari, R. N. Raman, M. J. Matthews, S. Elhadj, and C. P. Grigoropoulos, “Directed dewetting of amorphous silicon film by a donut-shaped laser pulse,” Nanotechnology 26(16), 165303 (2015).
[Crossref]
[PubMed]
J. W. Tomm, M. Ziegler, M. Hempel, and T. Elsaesser, “Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers,” Laser Photonics Rev. 5(3), 422–441 (2011).
[Crossref]
D. H. Zhang and H. L. Ma, “Scattering mechanisms of charge carriers in transparent conducting oxide films,” Appl. Phys. A-Matter 62, 487–492 (1996).
S. Z. Xiao, E. L. Gurevich, and A. Ostendorf, “Incubation effect and its influence on laser patterning of ITO thin film,” Appl. Phys. Adv. Mater. 107, 333–338 (2012).
G. Koren and U. P. Oppenheim, “Laser Ablation of Polymers in Pressurized Gas Ambients,” Appl. Phys. B-Photo 42, 41–43 (1987).
A. Miotello, R. Kelly, B. Braren, and C. E. Otis, “Novel Geometrical Effects Observed in Debris When Polymers Are Laser Sputtered,” Appl. Phys. Lett. 61(23), 2784–2786 (1992).
[Crossref]
M. D. Drory, J. W. Ager, T. Suski, I. Grzegory, and S. Porowski, “Hardness and fracture toughness of bulk single crystal gallium nitride,” Appl. Phys. Lett. 69(26), 4044–4046 (1996).
[Crossref]
M. A. Reshchikov, A. Usikov, H. Helava, and Y. Makarov, “Fine structure of the red luminescence band in undoped GaN,” Appl. Phys. Lett. 104(3), 032103 (2014).
[Crossref]
S. Y. Karpov and Y. N. Makarov, “Dislocation effect on light emission efficiency in gallium nitride,” Appl. Phys. Lett. 81(25), 4721–4723 (2002).
[Crossref]
W. T. Pawlewicz, I. B. Mann, W. H. Lowdermilk, and D. Milam, “Laser-Damage-Resistant Transparent Conductive Indium Tin Oxide Coatings,” Appl. Phys. Lett. 34(3), 196–198 (1979).
[Crossref]
D. C. Look and R. J. Molnar, “Degenerate layer at GaN/sapphire interface: Influence on hall-effect measurements,” Appl. Phys. Lett. 70(25), 3377–3379 (1997).
[Crossref]
M. Kuball, J. M. Hayes, A. D. Prins, N. W. A. van Uden, D. J. Dunstan, Y. Shi, and J. H. Edgar, “Raman scattering studies on single-crystalline bulk AlN under high pressures,” Appl. Phys. Lett. 78(6), 724 (2001).
[Crossref]
M. Kuball, J. M. Hayes, A. D. Prins, N. W. A. van Uden, D. J. Dunstan, Y. Shi, and J. H. Edgar, “Raman scattering studies on single-crystalline bulk AlN under high pressures,” Appl. Phys. Lett. 78(6), 724–726 (2001).
[Crossref]
W. S. Brocklesby, “Progress in high average power ultrafast lasers,” Eur. Phys. J. Spec. Top. 224(13), 2529–2543 (2015).
[Crossref]
H. Wang, Z. Huang, D. Zhang, F. Luo, L. Huang, Y. Li, Y. Luo, W. Wang, and X. Zhao, “Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm,” J. Appl. Phys. 110(11), 113111 (2011).
[Crossref]
O. Yavas and M. Takai, “Effect of substrate absorption on the efficiency of laser patterning of indium tin oxide thin films,” J. Appl. Phys. 85(8), 4207–4212 (1999).
[Crossref]
S. T. Yang, M. J. Matthews, S. Elhadj, V. G. Draggoo, and S. E. Bisson, “Thermal transport in CO2 laser irradiated fused silica: In situ measurements and analysis,” J. Appl. Phys. 106(10), 103106 (2009).
[Crossref]
W. W. Mullins, “Flattening of a Nearly Plane Solid Surface Due to Capillarity,” J. Appl. Phys. 30(1), 77–83 (1959).
[Crossref]
I. H. Lee, I. H. Choi, C. R. Lee, E. J. Shin, D. Kim, S. K. Noh, S. J. Son, K. Y. Lim, and H. J. Lee, “Stress relaxation in Si-doped GaN studied by Raman spectroscopy,” J. Appl. Phys. 83(11), 5787–5791 (1998).
[Crossref]
M. A. Reshchikov and H. Morkoc, “Luminescence properties of defects in GaN,” J. Appl. Phys. 97(6), 061301 (2005).
[Crossref]
S. O. Kucheyev, M. Toth, M. R. Phillips, J. S. Williams, C. Jagadish, and G. Li, “Chemical origin of the yellow luminescence in GaN,” J. Appl. Phys. 91(9), 5867–5874 (2002).
[Crossref]
T. Kozawa, T. Kachi, H. Kano, H. Nagase, N. Koide, and K. Manabe, “Thermal-Stress in Gan Epitaxial Layers Grown on Sapphire Substrates,” J. Appl. Phys. 77(9), 4389–4392 (1995).
[Crossref]
D. D. Koleske, A. E. Wickenden, R. L. Henry, J. C. Culbertson, and M. E. Twigg, “GaN decomposition in H2 and N2 at MOVPE temperatures and pressures,” J. Cryst. Growth 223(4), 466–483 (2001).
[Crossref]
R. K. Singh, “Transient plasma shielding effects during pulsed laser ablation of materials,” J. Electron. Mater. 25(1), 125–129 (1996).
[Crossref]
Y. Song, E. S. Kim, and A. Kapila, “Thermal-Stability of Sputter-Deposited Zno Thin-Films,” J. Electron. Mater. 24(2), 83–86 (1995).
[Crossref]
W. L. Wang, W. J. Yang, H. Y. Wang, and G. Q. Li, “Epitaxial growth of GaN films on unconventional oxide substrates,” J. Mater. Chem. C Mater. Opt. Electron. Devices 2(44), 9342–9358 (2014).
[Crossref]
W. J. Heward and D. J. Swenson, “Phase equilibria in the pseudo-binary In2O3-SnO2 system,” J. Mater. Sci. 42(17), 7135–7140 (2007).
[Crossref]
S. Ishibashi, Y. Higuchi, Y. Ota, and K. Nakamura, “Low Resistivity Indium Tin Oxide Transparent Conductive Films. 2. Effect of Sputtering Voltage on Electrical Property of Films,” J. Vac. Sci. Technol. A 8(3), 1403–1406 (1990).
[Crossref]
P. G. Eliseev, H. B. Sun, S. Juodkazis, T. Sugahara, S. Sakai, and H. Misawa, “Laser-induced damage threshold and surface processing of GaN at 400 nm wavelength,” Jap. J.Appl. Phys. Part 2-Letters 38(Part 2, No. 7B), L839–L841 (1999).
[Crossref]
J. W. Tomm, M. Ziegler, M. Hempel, and T. Elsaesser, “Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers,” Laser Photonics Rev. 5(3), 422–441 (2011).
[Crossref]
T. Kim, H. S. Kim, M. Hetterich, D. Jones, J. M. Girkin, E. Bente, and M. D. Dawson, “Femtosecond laser machining of gallium nitride,” Mat. Sci. Eng. B-Solid 82(1-3), 262–264 (2001).
[Crossref]
J. H. Yoo, J. B. In, C. Zheng, I. Sakellari, R. N. Raman, M. J. Matthews, S. Elhadj, and C. P. Grigoropoulos, “Directed dewetting of amorphous silicon film by a donut-shaped laser pulse,” Nanotechnology 26(16), 165303 (2015).
[Crossref]
[PubMed]
R. N. Raman, S. G. Demos, N. Shen, E. Feigenbaum, R. A. Negres, S. Elhadj, A. M. Rubenchik, and M. J. Matthews, “Damage on fused silica optics caused by laser ablation of surface-bound microparticles,” Opt. Express 24(3), 2634–2647 (2016).
[Crossref]
[PubMed]
P. E. Miller, J. D. Bude, T. I. Suratwala, N. Shen, T. A. Laurence, W. A. Steele, J. Menapace, M. D. Feit, and L. L. Wong, “Fracture-induced subbandgap absorption as a precursor to optical damage on fused silica surfaces,” Opt. Lett. 35(16), 2702–2704 (2010).
[Crossref]
[PubMed]
K. Mishchik, A. Ferrer, A. R. de la Cruz, A. Mermillod-Blondin, C. Mauclair, Y. Ouerdane, A. Boukenter, J. Solis, and R. Stoian, “Photoinscription domains for ultrafast laser writing of refractive index changes in BK7 borosilicate crown optical glass,” Opt. Mater. Express 3(1), 67–85 (2013).
[Crossref]
D. A. Willis, “Thermal mechanisms of laser micromachining of indium tin oxide,” Photon. Process. Microelectron. Photon. III 5339, 313–320 (2004).
[Crossref]
S. Nakashima, K. Sugioka, T. Ito, H. Takai, and K. Midorikawa, “Fabrication of periodic nano-hole array on GaN surface by fs laser for improvement of extraction efficiency in blue LED,” Phys. Procedia 5, 203–211 (2010).
[Crossref]
J. Elsner, R. Jones, M. I. Heggie, P. K. Sitch, M. Haugk, T. Frauenheim, S. Oberg, and P. R. Briddon, “Deep acceptors trapped at threading-edge dislocations in GaN,” Phys. Rev. B 58(19), 12571–12574 (1998).
[Crossref]
C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B 54(24), 17745–17753 (1996).
[Crossref]
D. O. Demchenko, I. C. Diallo, and M. A. Reshchikov, “Yellow Luminescence of Gallium Nitride Generated by Carbon Defect Complexes,” Phys. Rev. Lett. 110(8), 087404 (2013).
[Crossref]
[PubMed]
R. Seemann, S. Herminghaus, and K. Jacobs, “Dewetting patterns and molecular forces: a reconciliation,” Phys. Rev. Lett. 86(24), 5534–5537 (2001).
[Crossref]
[PubMed]
H. Köstlin, R. Jost, and W. Lems, “Optical and Electrical Properties of Doped In2o3 Films,” Phys. Status Solidi, A Appl. Res. 29(1), 87–93 (1975).
[Crossref]
P. G. Eliseev, S. Juodkazis, T. Sugahara, H.-B. Sun, S. Matsuo, S. Sakai, and H. Misawa, “GaN surface ablation by femtosecond pulses: atomic force microscopy studies and accumulation effects,” Proc. SPIE 4065, 546–556 (2000).
[Crossref]
F. Y. Genin and C. J. Stolz, “Morphologies of laser-induced damage in hafnia-silica multilayer mirror and polarizer coatings,” Proc. SPIE 2870, 439–448 (1996).
[Crossref]
M. Batzill and U. Diebold, “The surface and materials science of tin oxide,” Prog. Surf. Sci. 79(2-4), 47–154 (2005).
[Crossref]
M. Kuball, “Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control,” Surf. Interface Anal. 31(10), 987–999 (2001).
[Crossref]
D. G. Neerinck and T. J. Vink, “Depth profiling of thin ITO films by grazing incidence X-ray diffraction,” Thin Solid Films 278(1-2), 12–17 (1996).
[Crossref]
L. L. L. Fong Kwong Yam, Sue Ann Oh, and Zainuriah Hassan, “Gallium Nitride: An Overview of Structural Defects,” in Optoelectronics - Materials and Techniques (Padmanabhan Predeep, 2011).
H. S. Lee, J. O. Bang, H. J. Lee, G. J. Lee, K. H. Chai, and S. B. Jung, “Analysis of Thermo-Mechanical Behavior of ITO Layer on PET Substrate,” in 2011 IEEE 61st Electronic Components and Technology Conference (ECTC) (2011), pp. 1796–1799.
M. Fox, Optical Properties of Solids (Oxford, 2001).