Abstract

For Si wire waveguides, we designed a highly efficient fiber coupling structure consisting of a Si inverted taper waveguide and a CMOS-compatible thin SiN waveguide with an SiO2 spacer inserted between them. By using a small SiN waveguide with a 310 nm-square core, the optical field can be expanded to correspond to a fiber with a 4.0-μm mode field diameter. A coupled waveguide system with the SiN waveguide and Si taper waveguide can provide low-loss and low-polarization-dependent mode conversion. Both losses in fiber-SiN waveguide coupling and SiN-Si waveguide mode conversion are no more than 1 dB in a wide wavelength bandwidth from 1.36 μm to 1.65 μm. Through a detailed analysis of the effective refractive indices in the coupled waveguide system, we can understand mode conversion accurately and also derive guidelines for reducing the polarization dependence and for shortening device length.

© 2016 Optical Society of America

Full Article  |  PDF Article
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References

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    [Crossref]
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2016 (1)

2015 (3)

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. H. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).
[Crossref]

Y. Maegami, R. Takei, E. Omoda, T. Amano, M. Okano, M. Mori, T. Kamei, and Y. Sakakibara, “Spot-size converter with a SiO2 spacer layer between tapered Si and SiON waveguides for fiber-to-chip coupling,” Opt. Express 23(16), 21287–21295 (2015).
[Crossref] [PubMed]

W. D. Sacher, Y. Huang, G.-Q. Lo, and J. K. S. Poon, “Multilayer silicon nitride-on-silicon integrated photonic platforms and devices,” J. Lightwave Technol. 33(4), 901–910 (2015).
[Crossref]

2014 (3)

2013 (4)

K.-N. Ku and M.-C. M. Lee, “Wide-band optical mode converters for coupling between fiber and silicon photonics wire with large misaliment tolerance,” J. Lightwave Technol. 31(10), 1616–1620 (2013).
[Crossref]

D. J. Thomson, H. Porte, B. Goll, D. Knoll, S. Lischke, F. Y. Gardes, Y. Hu, G. T. Reed, H. Zimmermann, and L. Zimmermann, “Silicon carrier depletion modulator with 10 Gbit/s driver realized in high-performance photonic BiCMOS,” Laser Photonics Rev. 8(1), 180–187 (2013).
[Crossref]

T. Hiraki, H. Nishi, T. Tsuchizawa, R. Kou, H. Fukuda, K. Takeda, Y. Ishikawa, K. Wada, and K. Yamada, “Si-Ge-Silica monolithic integration platform and its application to a 22-Gb/s × 16-ch WDM receiver,” IEEE Photonics J. 5(4), 450047 (2013).
[Crossref]

H. Park, S. Kim, J. Park, J. Joo, and G. Kim, “A fiber-to-chip coupler based on Si/SiON cascaded tapers for Si photonic chips,” Opt. Express 21(24), 29313–29319 (2013).
[Crossref] [PubMed]

2012 (3)

2011 (1)

T. Tsuchizawa, K. Yamada, T. Watanabe, S. Park, H. Nishi, R. Kou, H. Shinojima, and S. Itabashi, “Monolithic integration of silicon-, ermanium-, and silica-based optical devices for telecommunications applications,” IEEE J. Sel. Top. Quantum Electron. 17(3), 516–525 (2011).
[Crossref]

2002 (1)

T. Shoji, T. Watanabe, K. Yamada, and H. Morita, “Low loss mode size converter from 0.3μm square Si wire waveguides to singlemode fibres,” Electron. Lett. 38(25), 1669 (2002).
[Crossref]

Amano, T.

Arakawa, Y.

Y. Urino, T. Usuki, J. Fujikata, M. Ishizaka, K. Yamada, T. Horikawa, T. Nakamura, and Y. Arakawa, “High-density and wide-bandwidth optical interconnects with silicon optical interposers,” Photonics Res. 2(3), A1–A7 (2014).
[Crossref]

Assefa, S.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. H. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).
[Crossref]

Barwicz, T.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. H. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).
[Crossref]

W. D. Sacher, Y. Huang, L. Ding, T. Barwicz, J. C. Mikkelsen, B. J. F. Taylor, G.-Q. Lo, and J. K. S. Poon, “Polarization rotator-splitters and controllers in a Si3N4-on-SOI integrated photonics platform,” Opt. Express 22(9), 11167–11174 (2014).
[Crossref] [PubMed]

Baudot, C.

Boeuf, F.

Breslin, C. M.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. H. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).
[Crossref]

Chu, T.

Cremer, S.

Ding, L.

Ellis-Monaghan, J.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. H. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).
[Crossref]

Fere, M.

Fujikata, J.

Y. Urino, T. Usuki, J. Fujikata, M. Ishizaka, K. Yamada, T. Horikawa, T. Nakamura, and Y. Arakawa, “High-density and wide-bandwidth optical interconnects with silicon optical interposers,” Photonics Res. 2(3), A1–A7 (2014).
[Crossref]

Fukuda, H.

T. Hiraki, H. Nishi, T. Tsuchizawa, R. Kou, H. Fukuda, K. Takeda, Y. Ishikawa, K. Wada, and K. Yamada, “Si-Ge-Silica monolithic integration platform and its application to a 22-Gb/s × 16-ch WDM receiver,” IEEE Photonics J. 5(4), 450047 (2013).
[Crossref]

Gardes, F. Y.

D. J. Thomson, H. Porte, B. Goll, D. Knoll, S. Lischke, F. Y. Gardes, Y. Hu, G. T. Reed, H. Zimmermann, and L. Zimmermann, “Silicon carrier depletion modulator with 10 Gbit/s driver realized in high-performance photonic BiCMOS,” Laser Photonics Rev. 8(1), 180–187 (2013).
[Crossref]

Gill, D. M.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. H. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).
[Crossref]

Goll, B.

D. J. Thomson, H. Porte, B. Goll, D. Knoll, S. Lischke, F. Y. Gardes, Y. Hu, G. T. Reed, H. Zimmermann, and L. Zimmermann, “Silicon carrier depletion modulator with 10 Gbit/s driver realized in high-performance photonic BiCMOS,” Laser Photonics Rev. 8(1), 180–187 (2013).
[Crossref]

Green, W. M. J.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. H. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).
[Crossref]

Haensch, W.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. H. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).
[Crossref]

Hiraki, T.

T. Hiraki, H. Nishi, T. Tsuchizawa, R. Kou, H. Fukuda, K. Takeda, Y. Ishikawa, K. Wada, and K. Yamada, “Si-Ge-Silica monolithic integration platform and its application to a 22-Gb/s × 16-ch WDM receiver,” IEEE Photonics J. 5(4), 450047 (2013).
[Crossref]

Horikawa, T.

Y. Urino, T. Usuki, J. Fujikata, M. Ishizaka, K. Yamada, T. Horikawa, T. Nakamura, and Y. Arakawa, “High-density and wide-bandwidth optical interconnects with silicon optical interposers,” Photonics Res. 2(3), A1–A7 (2014).
[Crossref]

M. Tokushima, A. Kamei, and T. Horikawa, “Dual-tapered 10-μm-spot-size converter with double core for coupling polarization-independent silicon rib waveguides to single-mode optical fibers,” Appl. Phys. Express 5(2), 022202 (2012).
[Crossref]

Hu, Y.

D. J. Thomson, H. Porte, B. Goll, D. Knoll, S. Lischke, F. Y. Gardes, Y. Hu, G. T. Reed, H. Zimmermann, and L. Zimmermann, “Silicon carrier depletion modulator with 10 Gbit/s driver realized in high-performance photonic BiCMOS,” Laser Photonics Rev. 8(1), 180–187 (2013).
[Crossref]

X. Xiao, H. Xu, X. Li, Y. Hu, K. Xiong, Z. Li, T. Chu, Y. Yu, and J. Yu, “25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions,” Opt. Express 20(3), 2507–2515 (2012).
[Crossref] [PubMed]

Huang, Y.

Ishikawa, Y.

T. Hiraki, H. Nishi, T. Tsuchizawa, R. Kou, H. Fukuda, K. Takeda, Y. Ishikawa, K. Wada, and K. Yamada, “Si-Ge-Silica monolithic integration platform and its application to a 22-Gb/s × 16-ch WDM receiver,” IEEE Photonics J. 5(4), 450047 (2013).
[Crossref]

H. Nishi, T. Tsuchizawa, R. Kou, H. Shinojima, T. Yamada, H. Kimura, Y. Ishikawa, K. Wada, and K. Yamada, “Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver,” Opt. Express 20(8), 9312–9321 (2012).
[Crossref] [PubMed]

Ishizaka, M.

Y. Urino, T. Usuki, J. Fujikata, M. Ishizaka, K. Yamada, T. Horikawa, T. Nakamura, and Y. Arakawa, “High-density and wide-bandwidth optical interconnects with silicon optical interposers,” Photonics Res. 2(3), A1–A7 (2014).
[Crossref]

Itabashi, S.

T. Tsuchizawa, K. Yamada, T. Watanabe, S. Park, H. Nishi, R. Kou, H. Shinojima, and S. Itabashi, “Monolithic integration of silicon-, ermanium-, and silica-based optical devices for telecommunications applications,” IEEE J. Sel. Top. Quantum Electron. 17(3), 516–525 (2011).
[Crossref]

Joo, J.

Kamei, A.

M. Tokushima, A. Kamei, and T. Horikawa, “Dual-tapered 10-μm-spot-size converter with double core for coupling polarization-independent silicon rib waveguides to single-mode optical fibers,” Appl. Phys. Express 5(2), 022202 (2012).
[Crossref]

Kamei, T.

Kamlapurkar, S.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. H. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).
[Crossref]

Khater, M. H.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. H. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).
[Crossref]

Kiewra, E.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. H. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).
[Crossref]

Kim, G.

Kim, S.

Kimura, H.

Knoll, D.

D. J. Thomson, H. Porte, B. Goll, D. Knoll, S. Lischke, F. Y. Gardes, Y. Hu, G. T. Reed, H. Zimmermann, and L. Zimmermann, “Silicon carrier depletion modulator with 10 Gbit/s driver realized in high-performance photonic BiCMOS,” Laser Photonics Rev. 8(1), 180–187 (2013).
[Crossref]

Kou, R.

T. Hiraki, H. Nishi, T. Tsuchizawa, R. Kou, H. Fukuda, K. Takeda, Y. Ishikawa, K. Wada, and K. Yamada, “Si-Ge-Silica monolithic integration platform and its application to a 22-Gb/s × 16-ch WDM receiver,” IEEE Photonics J. 5(4), 450047 (2013).
[Crossref]

H. Nishi, T. Tsuchizawa, R. Kou, H. Shinojima, T. Yamada, H. Kimura, Y. Ishikawa, K. Wada, and K. Yamada, “Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver,” Opt. Express 20(8), 9312–9321 (2012).
[Crossref] [PubMed]

T. Tsuchizawa, K. Yamada, T. Watanabe, S. Park, H. Nishi, R. Kou, H. Shinojima, and S. Itabashi, “Monolithic integration of silicon-, ermanium-, and silica-based optical devices for telecommunications applications,” IEEE J. Sel. Top. Quantum Electron. 17(3), 516–525 (2011).
[Crossref]

Ku, K.-N.

Lee, M.-C. M.

Li, X.

Li, Z.

Liow, T.-Y.

Lischke, S.

D. J. Thomson, H. Porte, B. Goll, D. Knoll, S. Lischke, F. Y. Gardes, Y. Hu, G. T. Reed, H. Zimmermann, and L. Zimmermann, “Silicon carrier depletion modulator with 10 Gbit/s driver realized in high-performance photonic BiCMOS,” Laser Photonics Rev. 8(1), 180–187 (2013).
[Crossref]

Lo, G.-Q.

Luo, X.

Maegami, Y.

Maggi, L.

Maitre, P. L.

Masini, G.

Mekis, A.

Mikkelsen, J. C.

Mori, M.

Morita, H.

T. Shoji, T. Watanabe, K. Yamada, and H. Morita, “Low loss mode size converter from 0.3μm square Si wire waveguides to singlemode fibres,” Electron. Lett. 38(25), 1669 (2002).
[Crossref]

Nakamura, T.

Y. Urino, T. Usuki, J. Fujikata, M. Ishizaka, K. Yamada, T. Horikawa, T. Nakamura, and Y. Arakawa, “High-density and wide-bandwidth optical interconnects with silicon optical interposers,” Photonics Res. 2(3), A1–A7 (2014).
[Crossref]

Nishi, H.

T. Hiraki, H. Nishi, T. Tsuchizawa, R. Kou, H. Fukuda, K. Takeda, Y. Ishikawa, K. Wada, and K. Yamada, “Si-Ge-Silica monolithic integration platform and its application to a 22-Gb/s × 16-ch WDM receiver,” IEEE Photonics J. 5(4), 450047 (2013).
[Crossref]

H. Nishi, T. Tsuchizawa, R. Kou, H. Shinojima, T. Yamada, H. Kimura, Y. Ishikawa, K. Wada, and K. Yamada, “Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver,” Opt. Express 20(8), 9312–9321 (2012).
[Crossref] [PubMed]

T. Tsuchizawa, K. Yamada, T. Watanabe, S. Park, H. Nishi, R. Kou, H. Shinojima, and S. Itabashi, “Monolithic integration of silicon-, ermanium-, and silica-based optical devices for telecommunications applications,” IEEE J. Sel. Top. Quantum Electron. 17(3), 516–525 (2011).
[Crossref]

Okano, M.

Omoda, E.

Orcutt, J. S.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. H. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).
[Crossref]

Park, H.

Park, J.

Park, S.

T. Tsuchizawa, K. Yamada, T. Watanabe, S. Park, H. Nishi, R. Kou, H. Shinojima, and S. Itabashi, “Monolithic integration of silicon-, ermanium-, and silica-based optical devices for telecommunications applications,” IEEE J. Sel. Top. Quantum Electron. 17(3), 516–525 (2011).
[Crossref]

Petiton, H.

Pinguet, T.

Poon, J. K. S.

Porte, H.

D. J. Thomson, H. Porte, B. Goll, D. Knoll, S. Lischke, F. Y. Gardes, Y. Hu, G. T. Reed, H. Zimmermann, and L. Zimmermann, “Silicon carrier depletion modulator with 10 Gbit/s driver realized in high-performance photonic BiCMOS,” Laser Photonics Rev. 8(1), 180–187 (2013).
[Crossref]

Proesel, J. E.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. H. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).
[Crossref]

Reed, G. T.

D. J. Thomson, H. Porte, B. Goll, D. Knoll, S. Lischke, F. Y. Gardes, Y. Hu, G. T. Reed, H. Zimmermann, and L. Zimmermann, “Silicon carrier depletion modulator with 10 Gbit/s driver realized in high-performance photonic BiCMOS,” Laser Photonics Rev. 8(1), 180–187 (2013).
[Crossref]

Reinholm, C.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. H. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).
[Crossref]

Rosenberg, J. C.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. H. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).
[Crossref]

Sacher, W. D.

Sakakibara, Y.

Shank, S. M.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. H. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).
[Crossref]

Shaw, M.

Shinojima, H.

H. Nishi, T. Tsuchizawa, R. Kou, H. Shinojima, T. Yamada, H. Kimura, Y. Ishikawa, K. Wada, and K. Yamada, “Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver,” Opt. Express 20(8), 9312–9321 (2012).
[Crossref] [PubMed]

T. Tsuchizawa, K. Yamada, T. Watanabe, S. Park, H. Nishi, R. Kou, H. Shinojima, and S. Itabashi, “Monolithic integration of silicon-, ermanium-, and silica-based optical devices for telecommunications applications,” IEEE J. Sel. Top. Quantum Electron. 17(3), 516–525 (2011).
[Crossref]

Shoji, T.

T. Shoji, T. Watanabe, K. Yamada, and H. Morita, “Low loss mode size converter from 0.3μm square Si wire waveguides to singlemode fibres,” Electron. Lett. 38(25), 1669 (2002).
[Crossref]

Song, J.

Takeda, K.

T. Hiraki, H. Nishi, T. Tsuchizawa, R. Kou, H. Fukuda, K. Takeda, Y. Ishikawa, K. Wada, and K. Yamada, “Si-Ge-Silica monolithic integration platform and its application to a 22-Gb/s × 16-ch WDM receiver,” IEEE Photonics J. 5(4), 450047 (2013).
[Crossref]

Takei, R.

Taylor, B. J. F.

Temporiti, E.

Thomson, D. J.

D. J. Thomson, H. Porte, B. Goll, D. Knoll, S. Lischke, F. Y. Gardes, Y. Hu, G. T. Reed, H. Zimmermann, and L. Zimmermann, “Silicon carrier depletion modulator with 10 Gbit/s driver realized in high-performance photonic BiCMOS,” Laser Photonics Rev. 8(1), 180–187 (2013).
[Crossref]

Tokushima, M.

M. Tokushima, A. Kamei, and T. Horikawa, “Dual-tapered 10-μm-spot-size converter with double core for coupling polarization-independent silicon rib waveguides to single-mode optical fibers,” Appl. Phys. Express 5(2), 022202 (2012).
[Crossref]

Traldi, M.

Tsuchizawa, T.

T. Hiraki, H. Nishi, T. Tsuchizawa, R. Kou, H. Fukuda, K. Takeda, Y. Ishikawa, K. Wada, and K. Yamada, “Si-Ge-Silica monolithic integration platform and its application to a 22-Gb/s × 16-ch WDM receiver,” IEEE Photonics J. 5(4), 450047 (2013).
[Crossref]

H. Nishi, T. Tsuchizawa, R. Kou, H. Shinojima, T. Yamada, H. Kimura, Y. Ishikawa, K. Wada, and K. Yamada, “Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver,” Opt. Express 20(8), 9312–9321 (2012).
[Crossref] [PubMed]

T. Tsuchizawa, K. Yamada, T. Watanabe, S. Park, H. Nishi, R. Kou, H. Shinojima, and S. Itabashi, “Monolithic integration of silicon-, ermanium-, and silica-based optical devices for telecommunications applications,” IEEE J. Sel. Top. Quantum Electron. 17(3), 516–525 (2011).
[Crossref]

Urino, Y.

Y. Urino, T. Usuki, J. Fujikata, M. Ishizaka, K. Yamada, T. Horikawa, T. Nakamura, and Y. Arakawa, “High-density and wide-bandwidth optical interconnects with silicon optical interposers,” Photonics Res. 2(3), A1–A7 (2014).
[Crossref]

Usuki, T.

Y. Urino, T. Usuki, J. Fujikata, M. Ishizaka, K. Yamada, T. Horikawa, T. Nakamura, and Y. Arakawa, “High-density and wide-bandwidth optical interconnects with silicon optical interposers,” Photonics Res. 2(3), A1–A7 (2014).
[Crossref]

Vlasov, Y. A.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. H. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).
[Crossref]

Vulliet, N.

Wada, K.

T. Hiraki, H. Nishi, T. Tsuchizawa, R. Kou, H. Fukuda, K. Takeda, Y. Ishikawa, K. Wada, and K. Yamada, “Si-Ge-Silica monolithic integration platform and its application to a 22-Gb/s × 16-ch WDM receiver,” IEEE Photonics J. 5(4), 450047 (2013).
[Crossref]

H. Nishi, T. Tsuchizawa, R. Kou, H. Shinojima, T. Yamada, H. Kimura, Y. Ishikawa, K. Wada, and K. Yamada, “Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver,” Opt. Express 20(8), 9312–9321 (2012).
[Crossref] [PubMed]

Watanabe, T.

T. Tsuchizawa, K. Yamada, T. Watanabe, S. Park, H. Nishi, R. Kou, H. Shinojima, and S. Itabashi, “Monolithic integration of silicon-, ermanium-, and silica-based optical devices for telecommunications applications,” IEEE J. Sel. Top. Quantum Electron. 17(3), 516–525 (2011).
[Crossref]

T. Shoji, T. Watanabe, K. Yamada, and H. Morita, “Low loss mode size converter from 0.3μm square Si wire waveguides to singlemode fibres,” Electron. Lett. 38(25), 1669 (2002).
[Crossref]

Xiao, X.

Xiong, C.

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. H. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).
[Crossref]

Xiong, K.

Xu, H.

Yamada, K.

Y. Urino, T. Usuki, J. Fujikata, M. Ishizaka, K. Yamada, T. Horikawa, T. Nakamura, and Y. Arakawa, “High-density and wide-bandwidth optical interconnects with silicon optical interposers,” Photonics Res. 2(3), A1–A7 (2014).
[Crossref]

T. Hiraki, H. Nishi, T. Tsuchizawa, R. Kou, H. Fukuda, K. Takeda, Y. Ishikawa, K. Wada, and K. Yamada, “Si-Ge-Silica monolithic integration platform and its application to a 22-Gb/s × 16-ch WDM receiver,” IEEE Photonics J. 5(4), 450047 (2013).
[Crossref]

H. Nishi, T. Tsuchizawa, R. Kou, H. Shinojima, T. Yamada, H. Kimura, Y. Ishikawa, K. Wada, and K. Yamada, “Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver,” Opt. Express 20(8), 9312–9321 (2012).
[Crossref] [PubMed]

T. Tsuchizawa, K. Yamada, T. Watanabe, S. Park, H. Nishi, R. Kou, H. Shinojima, and S. Itabashi, “Monolithic integration of silicon-, ermanium-, and silica-based optical devices for telecommunications applications,” IEEE J. Sel. Top. Quantum Electron. 17(3), 516–525 (2011).
[Crossref]

T. Shoji, T. Watanabe, K. Yamada, and H. Morita, “Low loss mode size converter from 0.3μm square Si wire waveguides to singlemode fibres,” Electron. Lett. 38(25), 1669 (2002).
[Crossref]

Yamada, T.

Yu, J.

Yu, Y.

Zimmermann, H.

D. J. Thomson, H. Porte, B. Goll, D. Knoll, S. Lischke, F. Y. Gardes, Y. Hu, G. T. Reed, H. Zimmermann, and L. Zimmermann, “Silicon carrier depletion modulator with 10 Gbit/s driver realized in high-performance photonic BiCMOS,” Laser Photonics Rev. 8(1), 180–187 (2013).
[Crossref]

Zimmermann, L.

D. J. Thomson, H. Porte, B. Goll, D. Knoll, S. Lischke, F. Y. Gardes, Y. Hu, G. T. Reed, H. Zimmermann, and L. Zimmermann, “Silicon carrier depletion modulator with 10 Gbit/s driver realized in high-performance photonic BiCMOS,” Laser Photonics Rev. 8(1), 180–187 (2013).
[Crossref]

Appl. Phys. Express (1)

M. Tokushima, A. Kamei, and T. Horikawa, “Dual-tapered 10-μm-spot-size converter with double core for coupling polarization-independent silicon rib waveguides to single-mode optical fibers,” Appl. Phys. Express 5(2), 022202 (2012).
[Crossref]

Electron. Lett. (1)

T. Shoji, T. Watanabe, K. Yamada, and H. Morita, “Low loss mode size converter from 0.3μm square Si wire waveguides to singlemode fibres,” Electron. Lett. 38(25), 1669 (2002).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (2)

D. M. Gill, J. E. Proesel, C. Xiong, J. S. Orcutt, J. C. Rosenberg, M. H. Khater, T. Barwicz, S. Assefa, S. M. Shank, C. Reinholm, J. Ellis-Monaghan, E. Kiewra, S. Kamlapurkar, C. M. Breslin, W. M. J. Green, W. Haensch, and Y. A. Vlasov, “Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link,” IEEE J. Sel. Top. Quantum Electron. 21(4), 3400311 (2015).
[Crossref]

T. Tsuchizawa, K. Yamada, T. Watanabe, S. Park, H. Nishi, R. Kou, H. Shinojima, and S. Itabashi, “Monolithic integration of silicon-, ermanium-, and silica-based optical devices for telecommunications applications,” IEEE J. Sel. Top. Quantum Electron. 17(3), 516–525 (2011).
[Crossref]

IEEE Photonics J. (1)

T. Hiraki, H. Nishi, T. Tsuchizawa, R. Kou, H. Fukuda, K. Takeda, Y. Ishikawa, K. Wada, and K. Yamada, “Si-Ge-Silica monolithic integration platform and its application to a 22-Gb/s × 16-ch WDM receiver,” IEEE Photonics J. 5(4), 450047 (2013).
[Crossref]

J. Lightwave Technol. (3)

Laser Photonics Rev. (1)

D. J. Thomson, H. Porte, B. Goll, D. Knoll, S. Lischke, F. Y. Gardes, Y. Hu, G. T. Reed, H. Zimmermann, and L. Zimmermann, “Silicon carrier depletion modulator with 10 Gbit/s driver realized in high-performance photonic BiCMOS,” Laser Photonics Rev. 8(1), 180–187 (2013).
[Crossref]

Opt. Express (6)

X. Xiao, H. Xu, X. Li, Y. Hu, K. Xiong, Z. Li, T. Chu, Y. Yu, and J. Yu, “25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions,” Opt. Express 20(3), 2507–2515 (2012).
[Crossref] [PubMed]

H. Nishi, T. Tsuchizawa, R. Kou, H. Shinojima, T. Yamada, H. Kimura, Y. Ishikawa, K. Wada, and K. Yamada, “Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver,” Opt. Express 20(8), 9312–9321 (2012).
[Crossref] [PubMed]

H. Park, S. Kim, J. Park, J. Joo, and G. Kim, “A fiber-to-chip coupler based on Si/SiON cascaded tapers for Si photonic chips,” Opt. Express 21(24), 29313–29319 (2013).
[Crossref] [PubMed]

Y. Maegami, R. Takei, E. Omoda, T. Amano, M. Okano, M. Mori, T. Kamei, and Y. Sakakibara, “Spot-size converter with a SiO2 spacer layer between tapered Si and SiON waveguides for fiber-to-chip coupling,” Opt. Express 23(16), 21287–21295 (2015).
[Crossref] [PubMed]

W. D. Sacher, Y. Huang, L. Ding, T. Barwicz, J. C. Mikkelsen, B. J. F. Taylor, G.-Q. Lo, and J. K. S. Poon, “Polarization rotator-splitters and controllers in a Si3N4-on-SOI integrated photonics platform,” Opt. Express 22(9), 11167–11174 (2014).
[Crossref] [PubMed]

Y. Huang, J. Song, X. Luo, T.-Y. Liow, and G.-Q. Lo, “CMOS compatible monolithic multi-layer Si3N4− on-SOI platform for low-loss high performance silicon photonics dense integration,” Opt. Express 22(18), 21859–21865 (2014).
[Crossref] [PubMed]

Photonics Res. (1)

Y. Urino, T. Usuki, J. Fujikata, M. Ishizaka, K. Yamada, T. Horikawa, T. Nakamura, and Y. Arakawa, “High-density and wide-bandwidth optical interconnects with silicon optical interposers,” Photonics Res. 2(3), A1–A7 (2014).
[Crossref]

Other (2)

T. Pinguet, P. M. D. Dobbelaere, D. Foltz, S. Gloeckner, S. Hovey, Y. Liang, M. Mack, G. Masini, A. Mekis, M. Peterson, S. Sahni, J. Schramm, M. Sharp, L. Verslegers, B. P. Welch, K. Yokoyama, and S. Yu, “25 Gb/s silicon photonic transceivers,” in Proceedings of IEEE Group IV photonics (GFP, 2012), ThC1.

FIMMWAVE/FIMMPROP, Photon Design Ltd. http://www.photond.com .

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Figures (9)

Fig. 1
Fig. 1 Schematic drawing of fiber coupling structure consisting of a Si wire waveguide with an inverted taper and the SiN secondary waveguide. A silica-based spacer layer is inserted between them.
Fig. 2
Fig. 2 Top view (upper), side view (right), and cross section (left) of device structural model.
Fig. 3
Fig. 3 Coupling efficiency between the fiber and SiN waveguide as a function of Sspacer and the core size of the SiN waveguide for each mode. Interlayer transition region is not included in calculations.
Fig. 4
Fig. 4 Calculated Sspacer dependence of substrate-leakage loss for each mode.
Fig. 5
Fig. 5 Color-plotted mode-conversion efficiency as a function of the Sspacer and Ltaper for each mode. The dashed lines denote mode conversion efficiency above 95% for both modes.
Fig. 6
Fig. 6 Simulated optical field propagating through the mode-conversion structure with design parameters, Sspacer = 1.0 μm and Ltaper = 500 μm for each mode.
Fig. 7
Fig. 7 Dependence of (a) coupling loss and (b) mode-conversion loss for each mode on calculated wavelength ranging from 1.25 μm to 1.65 μm.
Fig. 8
Fig. 8 Calculation model. (a) Top view and (b) side view. Effective refractive indices as a function of the width of the Si taper waveguide are shown in (c) and (d) at Sspacer = 0.5 μm, (e) and (f) at Sspacer = 1.0 μm, and (g) and (h) at Sspacer = 1.5 μm for each mode. Red regions denote anti-crossing regions.
Fig. 9
Fig. 9 Simulated electromagnetic field distribution in the coupled waveguide system at various positions (i) – (iv) in Fig. 8(e) and (f).

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