Abstract

Lasers-thyristors with a narrow (20 μm) mesa stripe contact have been studied. It was shown that the laser peak power reaches a value of 2.5 W in the long-pulse mode at a pulse width of 13 ns. It was demonstrated that generation of a controlled train of laser pulses with peak power of 1.6 W and width of 90 ps is possible in the short-pulse mode. The maximum value of the pulse repetition frequency was 470 kHz at the following working characteristics of the laser-thyristor: blocking voltage 5.8 V, control current pulse 25 mA. A number of specific features were observed in the short-pulse mode. It was found that the blocking voltage and amplitude of the control current pulse affect the lasing process. We observed that in short pulse mode the lasing spectra have a two-band structure and the lateral near field may degenerate into a single spot with size substantially smaller than the mesa stripe width. It was shown that the main reason for the observed specific features of lasing is the clearly pronounced effect of the spatial localization of the current.

© 2016 Optical Society of America

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  1. D. A. Veselov, V. A. Kapitonov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, and I. S. Tarasov, “Saturation of light –current characteristics of high-power lasers (l = 1.0 –1.1 mm) in pulsed regime,” Quantum Electron. 44(11), 993–996 (2014).
    [Crossref]
  2. X. Wang, P. Crump, H. Wenzel, A. Liero, T. Hoffmann, A. Pietrzak, C. M. Schultz, A. Klehr, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert, and G. Trankle, “Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers,” IEEE J. Quantum Electron. 46(5), 658–665 (2010).
    [Crossref]
  3. D. A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, N. V. Voronkova, and I. S. Tarasov, “Study of the absorption coefficient in layers of a semiconductor laser heterostructure,” Quantum Electron. 45(7), 604–606 (2015).
    [Crossref]
  4. B. S. Ryvkin and E. A. Avrutin, “Asymmetric, nonbroadened large optical cavity waveguide structures for high-power long-wavelength semiconductor lasers,” J. Appl. Phys. 97(12), 123103 (2005).
    [Crossref]
  5. L. V. Asryan and Z. N. Sokolova, “Optical power of semiconductor lasers with a low-dimensional active region,” J. Appl. Phys. 115(2), 023107 (2014).
    [Crossref]
  6. A. Y. Leshko, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, E. G. Golikova, Y. A. Ryaboshtan, and I. S. Tarasov, “High power single-mode (l = 1.3–1.6 mm) laser diodes based on quantum well InGaAsP/InP heterostructures,” Semiconductors 36(11), 1308–1314 (2002).
    [Crossref]
  7. A. Klehr, H. Wenzel, J. Fricke, F. Bugge, A. Liero, T. Hoffmann, G. Erbert, and G. Trankle, “Generation of spectrally stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier,” Proc. SPIE 9382, 93821I (2015).
    [Crossref]
  8. B. Sumpf, A. Klehr, T. N. Vu, G. Erbert, and G. Trankle, “975 nm high-peak power ns-diode laser based MOPA system suitable for water vapor DIAL applications,” Proc. SPIE 9382, 93821K (2015).
    [Crossref]
  9. S. Riecke, K. Posilovic, T. Kettler, D. Seidlitz, V. A. Shchukin, N. N. Ledentsov, K. Lauritsen, and D. Bimberg, “10.7W peak power picosecond pulses from high-brightness photonic band crystal laser diode,” Electron. Lett. 46(20), 1393–1394 (2010).
    [Crossref]
  10. B. Lanz, B. S. Ryvkin, E. A. Avrutin, and J. T. Kostamovaara, “Performance improvement by a saturable absorber in gain-switched asymmetric-waveguide laser diodes,” Opt. Express 21(24), 29780–29791 (2013).
    [Crossref] [PubMed]
  11. B. Lanz, S. N. Vainshtein, and J. T. Kostamovaara, “High power gain-switched laser diode using a superfast GaAs avalanche transistor for pumping,” Appl. Phys. Lett. 89(8), 081122 (2006).
    [Crossref]
  12. J. M. T. Huikari, E. A. Avrutin, B. S. Ryvkin, J. J. Nissinen, and J. T. Kostamovaara, “High-energy picosecond pulse generation by gain switching in asymmetric waveguide structure multiple quantum well lasers,” IEEE J. Sel. Top. Quantum. Electron. 21(6), 1501206 (2015).
    [Crossref]
  13. S. O. Slipchenko, A. A. Podoskin, A. V. Rozhkov, N. A. Pikhtin, and I. S. Tarasov, “High-power laser-thyristors with high injection efficiency (λ=890-910 nm),” IEEE Photonics Technol. Lett. 27(3), 307–310 (2015).
    [Crossref]
  14. S. O. Slipchenko, V. S. Yuferev, A. A. Podoskin, O. S. Soboleva, N. A. Pikhtin, and I. S. Tarasov, “Specific features of the injection processes dynamics in high-power laser thyristor,” IEEE Trans. Electron Dev. 62(12), 4091–4096 (2015).
    [Crossref]
  15. A. A. Podoskin, O. S. Soboleva, M. S. Zakharov, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and S. O. Slipchenko, “Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures,” Semicond. Sci. Technol. 30(12), 125011 (2015).
    [Crossref]
  16. S. O. Slipchenko, A. A. Podoskin, V. V. Vasil’eva, N. A. Pikhtin, A. V. Rozhkov, A. V. Gorbatyuk, V. V. Zolotarev, D. A. Veselov, A. V. Jabotinskii, A. A. Petukhov, I. S. Tarasov, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. Kurniavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range,” Semiconductors 48(5), 697–699 (2014).
    [Crossref]
  17. S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Generation of laser pulses in the MHz range of repetition frequencies by low-voltage AlGaAs/GaAs lasers-thyristors,” IEEE Trans. Electron Dev. (to be published).
  18. S. Slipchenko, A. Podoskin, O. Soboleva, M. S. Zakharov, K. Bakhvalov, D. Romanovich, N. Pikhtin, I. Tarasov, T. Bagaev, M. Ladugin, A. Marmalyuk, and V. Simakov, “High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems,” Proc. SPIE 9751, 97510P (2016).
    [Crossref]
  19. S. O. Slipchenko, A. A. Podoskin, A. V. Rozhkov, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, V. P. Konyaev, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm,” J. Appl. Phys. 116(8), 084503 (2014).
    [Crossref]
  20. S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, and I. S. Tarasov, “Fundamental aspects of closed optical mode formation in Fabry–Perot semiconductor lasers based on AlGaAs/GaAs (905nm) asymmetric heterostructures,ˮ,” Laser Phys. 24(10), 105001 (2014).
    [Crossref]
  21. S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Spatial dynamics of high current turn-on in low-voltage AlGaAs/GaAs phototransistors,ˮ,” J. Appl. Phys. 119(12), 124513 (2016).
    [Crossref]
  22. S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, A. L. Stankevich, N. A. Rudova, A. Y. Leshko, and I. S. Tarasov, “Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures,” Semiconductors 45(5), 673–678 (2011).
    [Crossref]
  23. S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, V. V. Zolotarev, I. S. Shashkin, A. Y. Leshko, A. V. Lutetskyi, M. G. Rastegaeva, I. S. Tarasov, and P. S. Kop’ev, “Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures,” Semiconductors 48(5), 691–696 (2014).
    [Crossref]

2016 (2)

S. Slipchenko, A. Podoskin, O. Soboleva, M. S. Zakharov, K. Bakhvalov, D. Romanovich, N. Pikhtin, I. Tarasov, T. Bagaev, M. Ladugin, A. Marmalyuk, and V. Simakov, “High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems,” Proc. SPIE 9751, 97510P (2016).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Spatial dynamics of high current turn-on in low-voltage AlGaAs/GaAs phototransistors,ˮ,” J. Appl. Phys. 119(12), 124513 (2016).
[Crossref]

2015 (7)

J. M. T. Huikari, E. A. Avrutin, B. S. Ryvkin, J. J. Nissinen, and J. T. Kostamovaara, “High-energy picosecond pulse generation by gain switching in asymmetric waveguide structure multiple quantum well lasers,” IEEE J. Sel. Top. Quantum. Electron. 21(6), 1501206 (2015).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, A. V. Rozhkov, N. A. Pikhtin, and I. S. Tarasov, “High-power laser-thyristors with high injection efficiency (λ=890-910 nm),” IEEE Photonics Technol. Lett. 27(3), 307–310 (2015).
[Crossref]

S. O. Slipchenko, V. S. Yuferev, A. A. Podoskin, O. S. Soboleva, N. A. Pikhtin, and I. S. Tarasov, “Specific features of the injection processes dynamics in high-power laser thyristor,” IEEE Trans. Electron Dev. 62(12), 4091–4096 (2015).
[Crossref]

A. A. Podoskin, O. S. Soboleva, M. S. Zakharov, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and S. O. Slipchenko, “Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures,” Semicond. Sci. Technol. 30(12), 125011 (2015).
[Crossref]

D. A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, N. V. Voronkova, and I. S. Tarasov, “Study of the absorption coefficient in layers of a semiconductor laser heterostructure,” Quantum Electron. 45(7), 604–606 (2015).
[Crossref]

A. Klehr, H. Wenzel, J. Fricke, F. Bugge, A. Liero, T. Hoffmann, G. Erbert, and G. Trankle, “Generation of spectrally stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier,” Proc. SPIE 9382, 93821I (2015).
[Crossref]

B. Sumpf, A. Klehr, T. N. Vu, G. Erbert, and G. Trankle, “975 nm high-peak power ns-diode laser based MOPA system suitable for water vapor DIAL applications,” Proc. SPIE 9382, 93821K (2015).
[Crossref]

2014 (6)

L. V. Asryan and Z. N. Sokolova, “Optical power of semiconductor lasers with a low-dimensional active region,” J. Appl. Phys. 115(2), 023107 (2014).
[Crossref]

D. A. Veselov, V. A. Kapitonov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, and I. S. Tarasov, “Saturation of light –current characteristics of high-power lasers (l = 1.0 –1.1 mm) in pulsed regime,” Quantum Electron. 44(11), 993–996 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, V. V. Vasil’eva, N. A. Pikhtin, A. V. Rozhkov, A. V. Gorbatyuk, V. V. Zolotarev, D. A. Veselov, A. V. Jabotinskii, A. A. Petukhov, I. S. Tarasov, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. Kurniavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range,” Semiconductors 48(5), 697–699 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, A. V. Rozhkov, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, V. P. Konyaev, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm,” J. Appl. Phys. 116(8), 084503 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, and I. S. Tarasov, “Fundamental aspects of closed optical mode formation in Fabry–Perot semiconductor lasers based on AlGaAs/GaAs (905nm) asymmetric heterostructures,ˮ,” Laser Phys. 24(10), 105001 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, V. V. Zolotarev, I. S. Shashkin, A. Y. Leshko, A. V. Lutetskyi, M. G. Rastegaeva, I. S. Tarasov, and P. S. Kop’ev, “Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures,” Semiconductors 48(5), 691–696 (2014).
[Crossref]

2013 (1)

2011 (1)

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, A. L. Stankevich, N. A. Rudova, A. Y. Leshko, and I. S. Tarasov, “Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures,” Semiconductors 45(5), 673–678 (2011).
[Crossref]

2010 (2)

X. Wang, P. Crump, H. Wenzel, A. Liero, T. Hoffmann, A. Pietrzak, C. M. Schultz, A. Klehr, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert, and G. Trankle, “Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers,” IEEE J. Quantum Electron. 46(5), 658–665 (2010).
[Crossref]

S. Riecke, K. Posilovic, T. Kettler, D. Seidlitz, V. A. Shchukin, N. N. Ledentsov, K. Lauritsen, and D. Bimberg, “10.7W peak power picosecond pulses from high-brightness photonic band crystal laser diode,” Electron. Lett. 46(20), 1393–1394 (2010).
[Crossref]

2006 (1)

B. Lanz, S. N. Vainshtein, and J. T. Kostamovaara, “High power gain-switched laser diode using a superfast GaAs avalanche transistor for pumping,” Appl. Phys. Lett. 89(8), 081122 (2006).
[Crossref]

2005 (1)

B. S. Ryvkin and E. A. Avrutin, “Asymmetric, nonbroadened large optical cavity waveguide structures for high-power long-wavelength semiconductor lasers,” J. Appl. Phys. 97(12), 123103 (2005).
[Crossref]

2002 (1)

A. Y. Leshko, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, E. G. Golikova, Y. A. Ryaboshtan, and I. S. Tarasov, “High power single-mode (l = 1.3–1.6 mm) laser diodes based on quantum well InGaAsP/InP heterostructures,” Semiconductors 36(11), 1308–1314 (2002).
[Crossref]

Asryan, L. V.

L. V. Asryan and Z. N. Sokolova, “Optical power of semiconductor lasers with a low-dimensional active region,” J. Appl. Phys. 115(2), 023107 (2014).
[Crossref]

Avrutin, E. A.

J. M. T. Huikari, E. A. Avrutin, B. S. Ryvkin, J. J. Nissinen, and J. T. Kostamovaara, “High-energy picosecond pulse generation by gain switching in asymmetric waveguide structure multiple quantum well lasers,” IEEE J. Sel. Top. Quantum. Electron. 21(6), 1501206 (2015).
[Crossref]

B. Lanz, B. S. Ryvkin, E. A. Avrutin, and J. T. Kostamovaara, “Performance improvement by a saturable absorber in gain-switched asymmetric-waveguide laser diodes,” Opt. Express 21(24), 29780–29791 (2013).
[Crossref] [PubMed]

B. S. Ryvkin and E. A. Avrutin, “Asymmetric, nonbroadened large optical cavity waveguide structures for high-power long-wavelength semiconductor lasers,” J. Appl. Phys. 97(12), 123103 (2005).
[Crossref]

Bagaev, T.

S. Slipchenko, A. Podoskin, O. Soboleva, M. S. Zakharov, K. Bakhvalov, D. Romanovich, N. Pikhtin, I. Tarasov, T. Bagaev, M. Ladugin, A. Marmalyuk, and V. Simakov, “High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems,” Proc. SPIE 9751, 97510P (2016).
[Crossref]

Bagaev, T. A.

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Spatial dynamics of high current turn-on in low-voltage AlGaAs/GaAs phototransistors,ˮ,” J. Appl. Phys. 119(12), 124513 (2016).
[Crossref]

A. A. Podoskin, O. S. Soboleva, M. S. Zakharov, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and S. O. Slipchenko, “Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures,” Semicond. Sci. Technol. 30(12), 125011 (2015).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, V. V. Vasil’eva, N. A. Pikhtin, A. V. Rozhkov, A. V. Gorbatyuk, V. V. Zolotarev, D. A. Veselov, A. V. Jabotinskii, A. A. Petukhov, I. S. Tarasov, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. Kurniavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range,” Semiconductors 48(5), 697–699 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, A. V. Rozhkov, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, V. P. Konyaev, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm,” J. Appl. Phys. 116(8), 084503 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Generation of laser pulses in the MHz range of repetition frequencies by low-voltage AlGaAs/GaAs lasers-thyristors,” IEEE Trans. Electron Dev. (to be published).

Bakhvalov, K.

S. Slipchenko, A. Podoskin, O. Soboleva, M. S. Zakharov, K. Bakhvalov, D. Romanovich, N. Pikhtin, I. Tarasov, T. Bagaev, M. Ladugin, A. Marmalyuk, and V. Simakov, “High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems,” Proc. SPIE 9751, 97510P (2016).
[Crossref]

Bimberg, D.

S. Riecke, K. Posilovic, T. Kettler, D. Seidlitz, V. A. Shchukin, N. N. Ledentsov, K. Lauritsen, and D. Bimberg, “10.7W peak power picosecond pulses from high-brightness photonic band crystal laser diode,” Electron. Lett. 46(20), 1393–1394 (2010).
[Crossref]

Bugge, F.

A. Klehr, H. Wenzel, J. Fricke, F. Bugge, A. Liero, T. Hoffmann, G. Erbert, and G. Trankle, “Generation of spectrally stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier,” Proc. SPIE 9382, 93821I (2015).
[Crossref]

X. Wang, P. Crump, H. Wenzel, A. Liero, T. Hoffmann, A. Pietrzak, C. M. Schultz, A. Klehr, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert, and G. Trankle, “Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers,” IEEE J. Quantum Electron. 46(5), 658–665 (2010).
[Crossref]

Crump, P.

X. Wang, P. Crump, H. Wenzel, A. Liero, T. Hoffmann, A. Pietrzak, C. M. Schultz, A. Klehr, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert, and G. Trankle, “Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers,” IEEE J. Quantum Electron. 46(5), 658–665 (2010).
[Crossref]

Einfeldt, S.

X. Wang, P. Crump, H. Wenzel, A. Liero, T. Hoffmann, A. Pietrzak, C. M. Schultz, A. Klehr, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert, and G. Trankle, “Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers,” IEEE J. Quantum Electron. 46(5), 658–665 (2010).
[Crossref]

Erbert, G.

A. Klehr, H. Wenzel, J. Fricke, F. Bugge, A. Liero, T. Hoffmann, G. Erbert, and G. Trankle, “Generation of spectrally stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier,” Proc. SPIE 9382, 93821I (2015).
[Crossref]

B. Sumpf, A. Klehr, T. N. Vu, G. Erbert, and G. Trankle, “975 nm high-peak power ns-diode laser based MOPA system suitable for water vapor DIAL applications,” Proc. SPIE 9382, 93821K (2015).
[Crossref]

X. Wang, P. Crump, H. Wenzel, A. Liero, T. Hoffmann, A. Pietrzak, C. M. Schultz, A. Klehr, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert, and G. Trankle, “Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers,” IEEE J. Quantum Electron. 46(5), 658–665 (2010).
[Crossref]

Fetisova, N. V.

A. Y. Leshko, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, E. G. Golikova, Y. A. Ryaboshtan, and I. S. Tarasov, “High power single-mode (l = 1.3–1.6 mm) laser diodes based on quantum well InGaAsP/InP heterostructures,” Semiconductors 36(11), 1308–1314 (2002).
[Crossref]

Fricke, J.

A. Klehr, H. Wenzel, J. Fricke, F. Bugge, A. Liero, T. Hoffmann, G. Erbert, and G. Trankle, “Generation of spectrally stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier,” Proc. SPIE 9382, 93821I (2015).
[Crossref]

Ginolas, A.

X. Wang, P. Crump, H. Wenzel, A. Liero, T. Hoffmann, A. Pietrzak, C. M. Schultz, A. Klehr, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert, and G. Trankle, “Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers,” IEEE J. Quantum Electron. 46(5), 658–665 (2010).
[Crossref]

Golikova, E. G.

A. Y. Leshko, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, E. G. Golikova, Y. A. Ryaboshtan, and I. S. Tarasov, “High power single-mode (l = 1.3–1.6 mm) laser diodes based on quantum well InGaAsP/InP heterostructures,” Semiconductors 36(11), 1308–1314 (2002).
[Crossref]

Gorbatyuk, A. V.

S. O. Slipchenko, A. A. Podoskin, V. V. Vasil’eva, N. A. Pikhtin, A. V. Rozhkov, A. V. Gorbatyuk, V. V. Zolotarev, D. A. Veselov, A. V. Jabotinskii, A. A. Petukhov, I. S. Tarasov, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. Kurniavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range,” Semiconductors 48(5), 697–699 (2014).
[Crossref]

Hoffmann, T.

A. Klehr, H. Wenzel, J. Fricke, F. Bugge, A. Liero, T. Hoffmann, G. Erbert, and G. Trankle, “Generation of spectrally stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier,” Proc. SPIE 9382, 93821I (2015).
[Crossref]

X. Wang, P. Crump, H. Wenzel, A. Liero, T. Hoffmann, A. Pietrzak, C. M. Schultz, A. Klehr, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert, and G. Trankle, “Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers,” IEEE J. Quantum Electron. 46(5), 658–665 (2010).
[Crossref]

Huikari, J. M. T.

J. M. T. Huikari, E. A. Avrutin, B. S. Ryvkin, J. J. Nissinen, and J. T. Kostamovaara, “High-energy picosecond pulse generation by gain switching in asymmetric waveguide structure multiple quantum well lasers,” IEEE J. Sel. Top. Quantum. Electron. 21(6), 1501206 (2015).
[Crossref]

Jabotinskii, A. V.

S. O. Slipchenko, A. A. Podoskin, V. V. Vasil’eva, N. A. Pikhtin, A. V. Rozhkov, A. V. Gorbatyuk, V. V. Zolotarev, D. A. Veselov, A. V. Jabotinskii, A. A. Petukhov, I. S. Tarasov, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. Kurniavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range,” Semiconductors 48(5), 697–699 (2014).
[Crossref]

Kapitonov, V. A.

D. A. Veselov, V. A. Kapitonov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, and I. S. Tarasov, “Saturation of light –current characteristics of high-power lasers (l = 1.0 –1.1 mm) in pulsed regime,” Quantum Electron. 44(11), 993–996 (2014).
[Crossref]

Kettler, T.

S. Riecke, K. Posilovic, T. Kettler, D. Seidlitz, V. A. Shchukin, N. N. Ledentsov, K. Lauritsen, and D. Bimberg, “10.7W peak power picosecond pulses from high-brightness photonic band crystal laser diode,” Electron. Lett. 46(20), 1393–1394 (2010).
[Crossref]

Klehr, A.

B. Sumpf, A. Klehr, T. N. Vu, G. Erbert, and G. Trankle, “975 nm high-peak power ns-diode laser based MOPA system suitable for water vapor DIAL applications,” Proc. SPIE 9382, 93821K (2015).
[Crossref]

A. Klehr, H. Wenzel, J. Fricke, F. Bugge, A. Liero, T. Hoffmann, G. Erbert, and G. Trankle, “Generation of spectrally stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier,” Proc. SPIE 9382, 93821I (2015).
[Crossref]

X. Wang, P. Crump, H. Wenzel, A. Liero, T. Hoffmann, A. Pietrzak, C. M. Schultz, A. Klehr, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert, and G. Trankle, “Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers,” IEEE J. Quantum Electron. 46(5), 658–665 (2010).
[Crossref]

Konyaev, V. P.

S. O. Slipchenko, A. A. Podoskin, V. V. Vasil’eva, N. A. Pikhtin, A. V. Rozhkov, A. V. Gorbatyuk, V. V. Zolotarev, D. A. Veselov, A. V. Jabotinskii, A. A. Petukhov, I. S. Tarasov, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. Kurniavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range,” Semiconductors 48(5), 697–699 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, A. V. Rozhkov, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, V. P. Konyaev, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm,” J. Appl. Phys. 116(8), 084503 (2014).
[Crossref]

Kop’ev, P. S.

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, V. V. Zolotarev, I. S. Shashkin, A. Y. Leshko, A. V. Lutetskyi, M. G. Rastegaeva, I. S. Tarasov, and P. S. Kop’ev, “Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures,” Semiconductors 48(5), 691–696 (2014).
[Crossref]

Kostamovaara, J. T.

J. M. T. Huikari, E. A. Avrutin, B. S. Ryvkin, J. J. Nissinen, and J. T. Kostamovaara, “High-energy picosecond pulse generation by gain switching in asymmetric waveguide structure multiple quantum well lasers,” IEEE J. Sel. Top. Quantum. Electron. 21(6), 1501206 (2015).
[Crossref]

B. Lanz, B. S. Ryvkin, E. A. Avrutin, and J. T. Kostamovaara, “Performance improvement by a saturable absorber in gain-switched asymmetric-waveguide laser diodes,” Opt. Express 21(24), 29780–29791 (2013).
[Crossref] [PubMed]

B. Lanz, S. N. Vainshtein, and J. T. Kostamovaara, “High power gain-switched laser diode using a superfast GaAs avalanche transistor for pumping,” Appl. Phys. Lett. 89(8), 081122 (2006).
[Crossref]

Kurniavko, Y. V.

S. O. Slipchenko, A. A. Podoskin, V. V. Vasil’eva, N. A. Pikhtin, A. V. Rozhkov, A. V. Gorbatyuk, V. V. Zolotarev, D. A. Veselov, A. V. Jabotinskii, A. A. Petukhov, I. S. Tarasov, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. Kurniavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range,” Semiconductors 48(5), 697–699 (2014).
[Crossref]

Ladugin, M.

S. Slipchenko, A. Podoskin, O. Soboleva, M. S. Zakharov, K. Bakhvalov, D. Romanovich, N. Pikhtin, I. Tarasov, T. Bagaev, M. Ladugin, A. Marmalyuk, and V. Simakov, “High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems,” Proc. SPIE 9751, 97510P (2016).
[Crossref]

Ladugin, M. A.

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Spatial dynamics of high current turn-on in low-voltage AlGaAs/GaAs phototransistors,ˮ,” J. Appl. Phys. 119(12), 124513 (2016).
[Crossref]

A. A. Podoskin, O. S. Soboleva, M. S. Zakharov, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and S. O. Slipchenko, “Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures,” Semicond. Sci. Technol. 30(12), 125011 (2015).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, V. V. Vasil’eva, N. A. Pikhtin, A. V. Rozhkov, A. V. Gorbatyuk, V. V. Zolotarev, D. A. Veselov, A. V. Jabotinskii, A. A. Petukhov, I. S. Tarasov, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. Kurniavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range,” Semiconductors 48(5), 697–699 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, A. V. Rozhkov, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, V. P. Konyaev, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm,” J. Appl. Phys. 116(8), 084503 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Generation of laser pulses in the MHz range of repetition frequencies by low-voltage AlGaAs/GaAs lasers-thyristors,” IEEE Trans. Electron Dev. (to be published).

Lanz, B.

B. Lanz, B. S. Ryvkin, E. A. Avrutin, and J. T. Kostamovaara, “Performance improvement by a saturable absorber in gain-switched asymmetric-waveguide laser diodes,” Opt. Express 21(24), 29780–29791 (2013).
[Crossref] [PubMed]

B. Lanz, S. N. Vainshtein, and J. T. Kostamovaara, “High power gain-switched laser diode using a superfast GaAs avalanche transistor for pumping,” Appl. Phys. Lett. 89(8), 081122 (2006).
[Crossref]

Lauritsen, K.

S. Riecke, K. Posilovic, T. Kettler, D. Seidlitz, V. A. Shchukin, N. N. Ledentsov, K. Lauritsen, and D. Bimberg, “10.7W peak power picosecond pulses from high-brightness photonic band crystal laser diode,” Electron. Lett. 46(20), 1393–1394 (2010).
[Crossref]

Ledentsov, N. N.

S. Riecke, K. Posilovic, T. Kettler, D. Seidlitz, V. A. Shchukin, N. N. Ledentsov, K. Lauritsen, and D. Bimberg, “10.7W peak power picosecond pulses from high-brightness photonic band crystal laser diode,” Electron. Lett. 46(20), 1393–1394 (2010).
[Crossref]

Leshko, A. Y.

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, V. V. Zolotarev, I. S. Shashkin, A. Y. Leshko, A. V. Lutetskyi, M. G. Rastegaeva, I. S. Tarasov, and P. S. Kop’ev, “Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures,” Semiconductors 48(5), 691–696 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, A. L. Stankevich, N. A. Rudova, A. Y. Leshko, and I. S. Tarasov, “Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures,” Semiconductors 45(5), 673–678 (2011).
[Crossref]

A. Y. Leshko, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, E. G. Golikova, Y. A. Ryaboshtan, and I. S. Tarasov, “High power single-mode (l = 1.3–1.6 mm) laser diodes based on quantum well InGaAsP/InP heterostructures,” Semiconductors 36(11), 1308–1314 (2002).
[Crossref]

Liero, A.

A. Klehr, H. Wenzel, J. Fricke, F. Bugge, A. Liero, T. Hoffmann, G. Erbert, and G. Trankle, “Generation of spectrally stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier,” Proc. SPIE 9382, 93821I (2015).
[Crossref]

X. Wang, P. Crump, H. Wenzel, A. Liero, T. Hoffmann, A. Pietrzak, C. M. Schultz, A. Klehr, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert, and G. Trankle, “Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers,” IEEE J. Quantum Electron. 46(5), 658–665 (2010).
[Crossref]

Lobintsov, A. V.

S. O. Slipchenko, A. A. Podoskin, V. V. Vasil’eva, N. A. Pikhtin, A. V. Rozhkov, A. V. Gorbatyuk, V. V. Zolotarev, D. A. Veselov, A. V. Jabotinskii, A. A. Petukhov, I. S. Tarasov, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. Kurniavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range,” Semiconductors 48(5), 697–699 (2014).
[Crossref]

Lutetskyi, A. V.

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, V. V. Zolotarev, I. S. Shashkin, A. Y. Leshko, A. V. Lutetskyi, M. G. Rastegaeva, I. S. Tarasov, and P. S. Kop’ev, “Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures,” Semiconductors 48(5), 691–696 (2014).
[Crossref]

Lyutetskii, A. V.

A. Y. Leshko, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, E. G. Golikova, Y. A. Ryaboshtan, and I. S. Tarasov, “High power single-mode (l = 1.3–1.6 mm) laser diodes based on quantum well InGaAsP/InP heterostructures,” Semiconductors 36(11), 1308–1314 (2002).
[Crossref]

Lyutetskiy, A. V.

D. A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, N. V. Voronkova, and I. S. Tarasov, “Study of the absorption coefficient in layers of a semiconductor laser heterostructure,” Quantum Electron. 45(7), 604–606 (2015).
[Crossref]

D. A. Veselov, V. A. Kapitonov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, and I. S. Tarasov, “Saturation of light –current characteristics of high-power lasers (l = 1.0 –1.1 mm) in pulsed regime,” Quantum Electron. 44(11), 993–996 (2014).
[Crossref]

Marmalyuk, A.

S. Slipchenko, A. Podoskin, O. Soboleva, M. S. Zakharov, K. Bakhvalov, D. Romanovich, N. Pikhtin, I. Tarasov, T. Bagaev, M. Ladugin, A. Marmalyuk, and V. Simakov, “High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems,” Proc. SPIE 9751, 97510P (2016).
[Crossref]

Marmalyuk, A. A.

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Spatial dynamics of high current turn-on in low-voltage AlGaAs/GaAs phototransistors,ˮ,” J. Appl. Phys. 119(12), 124513 (2016).
[Crossref]

A. A. Podoskin, O. S. Soboleva, M. S. Zakharov, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and S. O. Slipchenko, “Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures,” Semicond. Sci. Technol. 30(12), 125011 (2015).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, V. V. Vasil’eva, N. A. Pikhtin, A. V. Rozhkov, A. V. Gorbatyuk, V. V. Zolotarev, D. A. Veselov, A. V. Jabotinskii, A. A. Petukhov, I. S. Tarasov, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. Kurniavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range,” Semiconductors 48(5), 697–699 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, A. V. Rozhkov, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, V. P. Konyaev, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm,” J. Appl. Phys. 116(8), 084503 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Generation of laser pulses in the MHz range of repetition frequencies by low-voltage AlGaAs/GaAs lasers-thyristors,” IEEE Trans. Electron Dev. (to be published).

Nikolaev, D. N.

D. A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, N. V. Voronkova, and I. S. Tarasov, “Study of the absorption coefficient in layers of a semiconductor laser heterostructure,” Quantum Electron. 45(7), 604–606 (2015).
[Crossref]

D. A. Veselov, V. A. Kapitonov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, and I. S. Tarasov, “Saturation of light –current characteristics of high-power lasers (l = 1.0 –1.1 mm) in pulsed regime,” Quantum Electron. 44(11), 993–996 (2014).
[Crossref]

Nissinen, J. J.

J. M. T. Huikari, E. A. Avrutin, B. S. Ryvkin, J. J. Nissinen, and J. T. Kostamovaara, “High-energy picosecond pulse generation by gain switching in asymmetric waveguide structure multiple quantum well lasers,” IEEE J. Sel. Top. Quantum. Electron. 21(6), 1501206 (2015).
[Crossref]

Padalitsa, A. A.

S. O. Slipchenko, A. A. Podoskin, V. V. Vasil’eva, N. A. Pikhtin, A. V. Rozhkov, A. V. Gorbatyuk, V. V. Zolotarev, D. A. Veselov, A. V. Jabotinskii, A. A. Petukhov, I. S. Tarasov, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. Kurniavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range,” Semiconductors 48(5), 697–699 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, A. V. Rozhkov, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, V. P. Konyaev, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm,” J. Appl. Phys. 116(8), 084503 (2014).
[Crossref]

Petukhov, A. A.

S. O. Slipchenko, A. A. Podoskin, V. V. Vasil’eva, N. A. Pikhtin, A. V. Rozhkov, A. V. Gorbatyuk, V. V. Zolotarev, D. A. Veselov, A. V. Jabotinskii, A. A. Petukhov, I. S. Tarasov, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. Kurniavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range,” Semiconductors 48(5), 697–699 (2014).
[Crossref]

Pietrzak, A.

X. Wang, P. Crump, H. Wenzel, A. Liero, T. Hoffmann, A. Pietrzak, C. M. Schultz, A. Klehr, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert, and G. Trankle, “Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers,” IEEE J. Quantum Electron. 46(5), 658–665 (2010).
[Crossref]

Pikhtin, N.

S. Slipchenko, A. Podoskin, O. Soboleva, M. S. Zakharov, K. Bakhvalov, D. Romanovich, N. Pikhtin, I. Tarasov, T. Bagaev, M. Ladugin, A. Marmalyuk, and V. Simakov, “High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems,” Proc. SPIE 9751, 97510P (2016).
[Crossref]

Pikhtin, N. A.

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Spatial dynamics of high current turn-on in low-voltage AlGaAs/GaAs phototransistors,ˮ,” J. Appl. Phys. 119(12), 124513 (2016).
[Crossref]

D. A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, N. V. Voronkova, and I. S. Tarasov, “Study of the absorption coefficient in layers of a semiconductor laser heterostructure,” Quantum Electron. 45(7), 604–606 (2015).
[Crossref]

A. A. Podoskin, O. S. Soboleva, M. S. Zakharov, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and S. O. Slipchenko, “Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures,” Semicond. Sci. Technol. 30(12), 125011 (2015).
[Crossref]

S. O. Slipchenko, V. S. Yuferev, A. A. Podoskin, O. S. Soboleva, N. A. Pikhtin, and I. S. Tarasov, “Specific features of the injection processes dynamics in high-power laser thyristor,” IEEE Trans. Electron Dev. 62(12), 4091–4096 (2015).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, A. V. Rozhkov, N. A. Pikhtin, and I. S. Tarasov, “High-power laser-thyristors with high injection efficiency (λ=890-910 nm),” IEEE Photonics Technol. Lett. 27(3), 307–310 (2015).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, V. V. Vasil’eva, N. A. Pikhtin, A. V. Rozhkov, A. V. Gorbatyuk, V. V. Zolotarev, D. A. Veselov, A. V. Jabotinskii, A. A. Petukhov, I. S. Tarasov, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. Kurniavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range,” Semiconductors 48(5), 697–699 (2014).
[Crossref]

D. A. Veselov, V. A. Kapitonov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, and I. S. Tarasov, “Saturation of light –current characteristics of high-power lasers (l = 1.0 –1.1 mm) in pulsed regime,” Quantum Electron. 44(11), 993–996 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, A. V. Rozhkov, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, V. P. Konyaev, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm,” J. Appl. Phys. 116(8), 084503 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, and I. S. Tarasov, “Fundamental aspects of closed optical mode formation in Fabry–Perot semiconductor lasers based on AlGaAs/GaAs (905nm) asymmetric heterostructures,ˮ,” Laser Phys. 24(10), 105001 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, V. V. Zolotarev, I. S. Shashkin, A. Y. Leshko, A. V. Lutetskyi, M. G. Rastegaeva, I. S. Tarasov, and P. S. Kop’ev, “Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures,” Semiconductors 48(5), 691–696 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, A. L. Stankevich, N. A. Rudova, A. Y. Leshko, and I. S. Tarasov, “Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures,” Semiconductors 45(5), 673–678 (2011).
[Crossref]

A. Y. Leshko, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, E. G. Golikova, Y. A. Ryaboshtan, and I. S. Tarasov, “High power single-mode (l = 1.3–1.6 mm) laser diodes based on quantum well InGaAsP/InP heterostructures,” Semiconductors 36(11), 1308–1314 (2002).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Generation of laser pulses in the MHz range of repetition frequencies by low-voltage AlGaAs/GaAs lasers-thyristors,” IEEE Trans. Electron Dev. (to be published).

Podoskin, A.

S. Slipchenko, A. Podoskin, O. Soboleva, M. S. Zakharov, K. Bakhvalov, D. Romanovich, N. Pikhtin, I. Tarasov, T. Bagaev, M. Ladugin, A. Marmalyuk, and V. Simakov, “High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems,” Proc. SPIE 9751, 97510P (2016).
[Crossref]

Podoskin, A. A.

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Spatial dynamics of high current turn-on in low-voltage AlGaAs/GaAs phototransistors,ˮ,” J. Appl. Phys. 119(12), 124513 (2016).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, A. V. Rozhkov, N. A. Pikhtin, and I. S. Tarasov, “High-power laser-thyristors with high injection efficiency (λ=890-910 nm),” IEEE Photonics Technol. Lett. 27(3), 307–310 (2015).
[Crossref]

S. O. Slipchenko, V. S. Yuferev, A. A. Podoskin, O. S. Soboleva, N. A. Pikhtin, and I. S. Tarasov, “Specific features of the injection processes dynamics in high-power laser thyristor,” IEEE Trans. Electron Dev. 62(12), 4091–4096 (2015).
[Crossref]

A. A. Podoskin, O. S. Soboleva, M. S. Zakharov, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and S. O. Slipchenko, “Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures,” Semicond. Sci. Technol. 30(12), 125011 (2015).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, V. V. Vasil’eva, N. A. Pikhtin, A. V. Rozhkov, A. V. Gorbatyuk, V. V. Zolotarev, D. A. Veselov, A. V. Jabotinskii, A. A. Petukhov, I. S. Tarasov, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. Kurniavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range,” Semiconductors 48(5), 697–699 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, and I. S. Tarasov, “Fundamental aspects of closed optical mode formation in Fabry–Perot semiconductor lasers based on AlGaAs/GaAs (905nm) asymmetric heterostructures,ˮ,” Laser Phys. 24(10), 105001 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, A. V. Rozhkov, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, V. P. Konyaev, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm,” J. Appl. Phys. 116(8), 084503 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, V. V. Zolotarev, I. S. Shashkin, A. Y. Leshko, A. V. Lutetskyi, M. G. Rastegaeva, I. S. Tarasov, and P. S. Kop’ev, “Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures,” Semiconductors 48(5), 691–696 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, A. L. Stankevich, N. A. Rudova, A. Y. Leshko, and I. S. Tarasov, “Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures,” Semiconductors 45(5), 673–678 (2011).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Generation of laser pulses in the MHz range of repetition frequencies by low-voltage AlGaAs/GaAs lasers-thyristors,” IEEE Trans. Electron Dev. (to be published).

Posilovic, K.

S. Riecke, K. Posilovic, T. Kettler, D. Seidlitz, V. A. Shchukin, N. N. Ledentsov, K. Lauritsen, and D. Bimberg, “10.7W peak power picosecond pulses from high-brightness photonic band crystal laser diode,” Electron. Lett. 46(20), 1393–1394 (2010).
[Crossref]

Rastegaeva, M. G.

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, V. V. Zolotarev, I. S. Shashkin, A. Y. Leshko, A. V. Lutetskyi, M. G. Rastegaeva, I. S. Tarasov, and P. S. Kop’ev, “Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures,” Semiconductors 48(5), 691–696 (2014).
[Crossref]

Riecke, S.

S. Riecke, K. Posilovic, T. Kettler, D. Seidlitz, V. A. Shchukin, N. N. Ledentsov, K. Lauritsen, and D. Bimberg, “10.7W peak power picosecond pulses from high-brightness photonic band crystal laser diode,” Electron. Lett. 46(20), 1393–1394 (2010).
[Crossref]

Romanovich, D.

S. Slipchenko, A. Podoskin, O. Soboleva, M. S. Zakharov, K. Bakhvalov, D. Romanovich, N. Pikhtin, I. Tarasov, T. Bagaev, M. Ladugin, A. Marmalyuk, and V. Simakov, “High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems,” Proc. SPIE 9751, 97510P (2016).
[Crossref]

Rozhkov, A. V.

S. O. Slipchenko, A. A. Podoskin, A. V. Rozhkov, N. A. Pikhtin, and I. S. Tarasov, “High-power laser-thyristors with high injection efficiency (λ=890-910 nm),” IEEE Photonics Technol. Lett. 27(3), 307–310 (2015).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, V. V. Vasil’eva, N. A. Pikhtin, A. V. Rozhkov, A. V. Gorbatyuk, V. V. Zolotarev, D. A. Veselov, A. V. Jabotinskii, A. A. Petukhov, I. S. Tarasov, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. Kurniavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range,” Semiconductors 48(5), 697–699 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, A. V. Rozhkov, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, V. P. Konyaev, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm,” J. Appl. Phys. 116(8), 084503 (2014).
[Crossref]

Rudova, N. A.

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, A. L. Stankevich, N. A. Rudova, A. Y. Leshko, and I. S. Tarasov, “Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures,” Semiconductors 45(5), 673–678 (2011).
[Crossref]

Ryaboshtan, Y. A.

A. Y. Leshko, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, E. G. Golikova, Y. A. Ryaboshtan, and I. S. Tarasov, “High power single-mode (l = 1.3–1.6 mm) laser diodes based on quantum well InGaAsP/InP heterostructures,” Semiconductors 36(11), 1308–1314 (2002).
[Crossref]

Ryvkin, B. S.

J. M. T. Huikari, E. A. Avrutin, B. S. Ryvkin, J. J. Nissinen, and J. T. Kostamovaara, “High-energy picosecond pulse generation by gain switching in asymmetric waveguide structure multiple quantum well lasers,” IEEE J. Sel. Top. Quantum. Electron. 21(6), 1501206 (2015).
[Crossref]

B. Lanz, B. S. Ryvkin, E. A. Avrutin, and J. T. Kostamovaara, “Performance improvement by a saturable absorber in gain-switched asymmetric-waveguide laser diodes,” Opt. Express 21(24), 29780–29791 (2013).
[Crossref] [PubMed]

B. S. Ryvkin and E. A. Avrutin, “Asymmetric, nonbroadened large optical cavity waveguide structures for high-power long-wavelength semiconductor lasers,” J. Appl. Phys. 97(12), 123103 (2005).
[Crossref]

Schultz, C. M.

X. Wang, P. Crump, H. Wenzel, A. Liero, T. Hoffmann, A. Pietrzak, C. M. Schultz, A. Klehr, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert, and G. Trankle, “Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers,” IEEE J. Quantum Electron. 46(5), 658–665 (2010).
[Crossref]

Seidlitz, D.

S. Riecke, K. Posilovic, T. Kettler, D. Seidlitz, V. A. Shchukin, N. N. Ledentsov, K. Lauritsen, and D. Bimberg, “10.7W peak power picosecond pulses from high-brightness photonic band crystal laser diode,” Electron. Lett. 46(20), 1393–1394 (2010).
[Crossref]

Shamakhov, V. V.

D. A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, N. V. Voronkova, and I. S. Tarasov, “Study of the absorption coefficient in layers of a semiconductor laser heterostructure,” Quantum Electron. 45(7), 604–606 (2015).
[Crossref]

D. A. Veselov, V. A. Kapitonov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, and I. S. Tarasov, “Saturation of light –current characteristics of high-power lasers (l = 1.0 –1.1 mm) in pulsed regime,” Quantum Electron. 44(11), 993–996 (2014).
[Crossref]

Shashkin, I. S.

D. A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, N. V. Voronkova, and I. S. Tarasov, “Study of the absorption coefficient in layers of a semiconductor laser heterostructure,” Quantum Electron. 45(7), 604–606 (2015).
[Crossref]

D. A. Veselov, V. A. Kapitonov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, and I. S. Tarasov, “Saturation of light –current characteristics of high-power lasers (l = 1.0 –1.1 mm) in pulsed regime,” Quantum Electron. 44(11), 993–996 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, V. V. Zolotarev, I. S. Shashkin, A. Y. Leshko, A. V. Lutetskyi, M. G. Rastegaeva, I. S. Tarasov, and P. S. Kop’ev, “Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures,” Semiconductors 48(5), 691–696 (2014).
[Crossref]

Shchukin, V. A.

S. Riecke, K. Posilovic, T. Kettler, D. Seidlitz, V. A. Shchukin, N. N. Ledentsov, K. Lauritsen, and D. Bimberg, “10.7W peak power picosecond pulses from high-brightness photonic band crystal laser diode,” Electron. Lett. 46(20), 1393–1394 (2010).
[Crossref]

Simakov, V.

S. Slipchenko, A. Podoskin, O. Soboleva, M. S. Zakharov, K. Bakhvalov, D. Romanovich, N. Pikhtin, I. Tarasov, T. Bagaev, M. Ladugin, A. Marmalyuk, and V. Simakov, “High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems,” Proc. SPIE 9751, 97510P (2016).
[Crossref]

Simakov, V. A.

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Spatial dynamics of high current turn-on in low-voltage AlGaAs/GaAs phototransistors,ˮ,” J. Appl. Phys. 119(12), 124513 (2016).
[Crossref]

A. A. Podoskin, O. S. Soboleva, M. S. Zakharov, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and S. O. Slipchenko, “Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures,” Semicond. Sci. Technol. 30(12), 125011 (2015).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, V. V. Vasil’eva, N. A. Pikhtin, A. V. Rozhkov, A. V. Gorbatyuk, V. V. Zolotarev, D. A. Veselov, A. V. Jabotinskii, A. A. Petukhov, I. S. Tarasov, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. Kurniavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range,” Semiconductors 48(5), 697–699 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, A. V. Rozhkov, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, V. P. Konyaev, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm,” J. Appl. Phys. 116(8), 084503 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Generation of laser pulses in the MHz range of repetition frequencies by low-voltage AlGaAs/GaAs lasers-thyristors,” IEEE Trans. Electron Dev. (to be published).

Slipchenko, S.

S. Slipchenko, A. Podoskin, O. Soboleva, M. S. Zakharov, K. Bakhvalov, D. Romanovich, N. Pikhtin, I. Tarasov, T. Bagaev, M. Ladugin, A. Marmalyuk, and V. Simakov, “High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems,” Proc. SPIE 9751, 97510P (2016).
[Crossref]

Slipchenko, S. O.

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Spatial dynamics of high current turn-on in low-voltage AlGaAs/GaAs phototransistors,ˮ,” J. Appl. Phys. 119(12), 124513 (2016).
[Crossref]

A. A. Podoskin, O. S. Soboleva, M. S. Zakharov, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and S. O. Slipchenko, “Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures,” Semicond. Sci. Technol. 30(12), 125011 (2015).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, A. V. Rozhkov, N. A. Pikhtin, and I. S. Tarasov, “High-power laser-thyristors with high injection efficiency (λ=890-910 nm),” IEEE Photonics Technol. Lett. 27(3), 307–310 (2015).
[Crossref]

S. O. Slipchenko, V. S. Yuferev, A. A. Podoskin, O. S. Soboleva, N. A. Pikhtin, and I. S. Tarasov, “Specific features of the injection processes dynamics in high-power laser thyristor,” IEEE Trans. Electron Dev. 62(12), 4091–4096 (2015).
[Crossref]

D. A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, N. V. Voronkova, and I. S. Tarasov, “Study of the absorption coefficient in layers of a semiconductor laser heterostructure,” Quantum Electron. 45(7), 604–606 (2015).
[Crossref]

D. A. Veselov, V. A. Kapitonov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, and I. S. Tarasov, “Saturation of light –current characteristics of high-power lasers (l = 1.0 –1.1 mm) in pulsed regime,” Quantum Electron. 44(11), 993–996 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, V. V. Vasil’eva, N. A. Pikhtin, A. V. Rozhkov, A. V. Gorbatyuk, V. V. Zolotarev, D. A. Veselov, A. V. Jabotinskii, A. A. Petukhov, I. S. Tarasov, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. Kurniavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range,” Semiconductors 48(5), 697–699 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, and I. S. Tarasov, “Fundamental aspects of closed optical mode formation in Fabry–Perot semiconductor lasers based on AlGaAs/GaAs (905nm) asymmetric heterostructures,ˮ,” Laser Phys. 24(10), 105001 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, A. V. Rozhkov, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, V. P. Konyaev, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm,” J. Appl. Phys. 116(8), 084503 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, V. V. Zolotarev, I. S. Shashkin, A. Y. Leshko, A. V. Lutetskyi, M. G. Rastegaeva, I. S. Tarasov, and P. S. Kop’ev, “Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures,” Semiconductors 48(5), 691–696 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, A. L. Stankevich, N. A. Rudova, A. Y. Leshko, and I. S. Tarasov, “Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures,” Semiconductors 45(5), 673–678 (2011).
[Crossref]

A. Y. Leshko, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, E. G. Golikova, Y. A. Ryaboshtan, and I. S. Tarasov, “High power single-mode (l = 1.3–1.6 mm) laser diodes based on quantum well InGaAsP/InP heterostructures,” Semiconductors 36(11), 1308–1314 (2002).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Generation of laser pulses in the MHz range of repetition frequencies by low-voltage AlGaAs/GaAs lasers-thyristors,” IEEE Trans. Electron Dev. (to be published).

Soboleva, O.

S. Slipchenko, A. Podoskin, O. Soboleva, M. S. Zakharov, K. Bakhvalov, D. Romanovich, N. Pikhtin, I. Tarasov, T. Bagaev, M. Ladugin, A. Marmalyuk, and V. Simakov, “High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems,” Proc. SPIE 9751, 97510P (2016).
[Crossref]

Soboleva, O. S.

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Spatial dynamics of high current turn-on in low-voltage AlGaAs/GaAs phototransistors,ˮ,” J. Appl. Phys. 119(12), 124513 (2016).
[Crossref]

A. A. Podoskin, O. S. Soboleva, M. S. Zakharov, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and S. O. Slipchenko, “Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures,” Semicond. Sci. Technol. 30(12), 125011 (2015).
[Crossref]

S. O. Slipchenko, V. S. Yuferev, A. A. Podoskin, O. S. Soboleva, N. A. Pikhtin, and I. S. Tarasov, “Specific features of the injection processes dynamics in high-power laser thyristor,” IEEE Trans. Electron Dev. 62(12), 4091–4096 (2015).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Generation of laser pulses in the MHz range of repetition frequencies by low-voltage AlGaAs/GaAs lasers-thyristors,” IEEE Trans. Electron Dev. (to be published).

Sokolova, Z. N.

D. A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, N. V. Voronkova, and I. S. Tarasov, “Study of the absorption coefficient in layers of a semiconductor laser heterostructure,” Quantum Electron. 45(7), 604–606 (2015).
[Crossref]

D. A. Veselov, V. A. Kapitonov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, and I. S. Tarasov, “Saturation of light –current characteristics of high-power lasers (l = 1.0 –1.1 mm) in pulsed regime,” Quantum Electron. 44(11), 993–996 (2014).
[Crossref]

L. V. Asryan and Z. N. Sokolova, “Optical power of semiconductor lasers with a low-dimensional active region,” J. Appl. Phys. 115(2), 023107 (2014).
[Crossref]

A. Y. Leshko, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, E. G. Golikova, Y. A. Ryaboshtan, and I. S. Tarasov, “High power single-mode (l = 1.3–1.6 mm) laser diodes based on quantum well InGaAsP/InP heterostructures,” Semiconductors 36(11), 1308–1314 (2002).
[Crossref]

Stankevich, A. L.

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, A. L. Stankevich, N. A. Rudova, A. Y. Leshko, and I. S. Tarasov, “Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures,” Semiconductors 45(5), 673–678 (2011).
[Crossref]

Sumpf, B.

B. Sumpf, A. Klehr, T. N. Vu, G. Erbert, and G. Trankle, “975 nm high-peak power ns-diode laser based MOPA system suitable for water vapor DIAL applications,” Proc. SPIE 9382, 93821K (2015).
[Crossref]

Tarasov, I.

S. Slipchenko, A. Podoskin, O. Soboleva, M. S. Zakharov, K. Bakhvalov, D. Romanovich, N. Pikhtin, I. Tarasov, T. Bagaev, M. Ladugin, A. Marmalyuk, and V. Simakov, “High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems,” Proc. SPIE 9751, 97510P (2016).
[Crossref]

Tarasov, I. S.

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Spatial dynamics of high current turn-on in low-voltage AlGaAs/GaAs phototransistors,ˮ,” J. Appl. Phys. 119(12), 124513 (2016).
[Crossref]

D. A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, N. V. Voronkova, and I. S. Tarasov, “Study of the absorption coefficient in layers of a semiconductor laser heterostructure,” Quantum Electron. 45(7), 604–606 (2015).
[Crossref]

S. O. Slipchenko, V. S. Yuferev, A. A. Podoskin, O. S. Soboleva, N. A. Pikhtin, and I. S. Tarasov, “Specific features of the injection processes dynamics in high-power laser thyristor,” IEEE Trans. Electron Dev. 62(12), 4091–4096 (2015).
[Crossref]

A. A. Podoskin, O. S. Soboleva, M. S. Zakharov, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and S. O. Slipchenko, “Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures,” Semicond. Sci. Technol. 30(12), 125011 (2015).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, A. V. Rozhkov, N. A. Pikhtin, and I. S. Tarasov, “High-power laser-thyristors with high injection efficiency (λ=890-910 nm),” IEEE Photonics Technol. Lett. 27(3), 307–310 (2015).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, V. V. Vasil’eva, N. A. Pikhtin, A. V. Rozhkov, A. V. Gorbatyuk, V. V. Zolotarev, D. A. Veselov, A. V. Jabotinskii, A. A. Petukhov, I. S. Tarasov, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. Kurniavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range,” Semiconductors 48(5), 697–699 (2014).
[Crossref]

D. A. Veselov, V. A. Kapitonov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, and I. S. Tarasov, “Saturation of light –current characteristics of high-power lasers (l = 1.0 –1.1 mm) in pulsed regime,” Quantum Electron. 44(11), 993–996 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, and I. S. Tarasov, “Fundamental aspects of closed optical mode formation in Fabry–Perot semiconductor lasers based on AlGaAs/GaAs (905nm) asymmetric heterostructures,ˮ,” Laser Phys. 24(10), 105001 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, A. V. Rozhkov, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, V. P. Konyaev, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm,” J. Appl. Phys. 116(8), 084503 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, V. V. Zolotarev, I. S. Shashkin, A. Y. Leshko, A. V. Lutetskyi, M. G. Rastegaeva, I. S. Tarasov, and P. S. Kop’ev, “Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures,” Semiconductors 48(5), 691–696 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, A. L. Stankevich, N. A. Rudova, A. Y. Leshko, and I. S. Tarasov, “Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures,” Semiconductors 45(5), 673–678 (2011).
[Crossref]

A. Y. Leshko, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, E. G. Golikova, Y. A. Ryaboshtan, and I. S. Tarasov, “High power single-mode (l = 1.3–1.6 mm) laser diodes based on quantum well InGaAsP/InP heterostructures,” Semiconductors 36(11), 1308–1314 (2002).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Generation of laser pulses in the MHz range of repetition frequencies by low-voltage AlGaAs/GaAs lasers-thyristors,” IEEE Trans. Electron Dev. (to be published).

Trankle, G.

A. Klehr, H. Wenzel, J. Fricke, F. Bugge, A. Liero, T. Hoffmann, G. Erbert, and G. Trankle, “Generation of spectrally stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier,” Proc. SPIE 9382, 93821I (2015).
[Crossref]

B. Sumpf, A. Klehr, T. N. Vu, G. Erbert, and G. Trankle, “975 nm high-peak power ns-diode laser based MOPA system suitable for water vapor DIAL applications,” Proc. SPIE 9382, 93821K (2015).
[Crossref]

X. Wang, P. Crump, H. Wenzel, A. Liero, T. Hoffmann, A. Pietrzak, C. M. Schultz, A. Klehr, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert, and G. Trankle, “Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers,” IEEE J. Quantum Electron. 46(5), 658–665 (2010).
[Crossref]

Vainshtein, S. N.

B. Lanz, S. N. Vainshtein, and J. T. Kostamovaara, “High power gain-switched laser diode using a superfast GaAs avalanche transistor for pumping,” Appl. Phys. Lett. 89(8), 081122 (2006).
[Crossref]

Vasil’eva, V. V.

S. O. Slipchenko, A. A. Podoskin, V. V. Vasil’eva, N. A. Pikhtin, A. V. Rozhkov, A. V. Gorbatyuk, V. V. Zolotarev, D. A. Veselov, A. V. Jabotinskii, A. A. Petukhov, I. S. Tarasov, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. Kurniavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range,” Semiconductors 48(5), 697–699 (2014).
[Crossref]

Veselov, D. A.

A. A. Podoskin, O. S. Soboleva, M. S. Zakharov, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and S. O. Slipchenko, “Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures,” Semicond. Sci. Technol. 30(12), 125011 (2015).
[Crossref]

D. A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, N. V. Voronkova, and I. S. Tarasov, “Study of the absorption coefficient in layers of a semiconductor laser heterostructure,” Quantum Electron. 45(7), 604–606 (2015).
[Crossref]

D. A. Veselov, V. A. Kapitonov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, and I. S. Tarasov, “Saturation of light –current characteristics of high-power lasers (l = 1.0 –1.1 mm) in pulsed regime,” Quantum Electron. 44(11), 993–996 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, V. V. Vasil’eva, N. A. Pikhtin, A. V. Rozhkov, A. V. Gorbatyuk, V. V. Zolotarev, D. A. Veselov, A. V. Jabotinskii, A. A. Petukhov, I. S. Tarasov, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. Kurniavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range,” Semiconductors 48(5), 697–699 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Generation of laser pulses in the MHz range of repetition frequencies by low-voltage AlGaAs/GaAs lasers-thyristors,” IEEE Trans. Electron Dev. (to be published).

Voronkova, N. V.

D. A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, N. V. Voronkova, and I. S. Tarasov, “Study of the absorption coefficient in layers of a semiconductor laser heterostructure,” Quantum Electron. 45(7), 604–606 (2015).
[Crossref]

Vu, T. N.

B. Sumpf, A. Klehr, T. N. Vu, G. Erbert, and G. Trankle, “975 nm high-peak power ns-diode laser based MOPA system suitable for water vapor DIAL applications,” Proc. SPIE 9382, 93821K (2015).
[Crossref]

Wang, X.

X. Wang, P. Crump, H. Wenzel, A. Liero, T. Hoffmann, A. Pietrzak, C. M. Schultz, A. Klehr, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert, and G. Trankle, “Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers,” IEEE J. Quantum Electron. 46(5), 658–665 (2010).
[Crossref]

Wenzel, H.

A. Klehr, H. Wenzel, J. Fricke, F. Bugge, A. Liero, T. Hoffmann, G. Erbert, and G. Trankle, “Generation of spectrally stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier,” Proc. SPIE 9382, 93821I (2015).
[Crossref]

X. Wang, P. Crump, H. Wenzel, A. Liero, T. Hoffmann, A. Pietrzak, C. M. Schultz, A. Klehr, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert, and G. Trankle, “Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers,” IEEE J. Quantum Electron. 46(5), 658–665 (2010).
[Crossref]

Yuferev, V. S.

S. O. Slipchenko, V. S. Yuferev, A. A. Podoskin, O. S. Soboleva, N. A. Pikhtin, and I. S. Tarasov, “Specific features of the injection processes dynamics in high-power laser thyristor,” IEEE Trans. Electron Dev. 62(12), 4091–4096 (2015).
[Crossref]

Zakharov, M. S.

S. Slipchenko, A. Podoskin, O. Soboleva, M. S. Zakharov, K. Bakhvalov, D. Romanovich, N. Pikhtin, I. Tarasov, T. Bagaev, M. Ladugin, A. Marmalyuk, and V. Simakov, “High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems,” Proc. SPIE 9751, 97510P (2016).
[Crossref]

A. A. Podoskin, O. S. Soboleva, M. S. Zakharov, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and S. O. Slipchenko, “Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures,” Semicond. Sci. Technol. 30(12), 125011 (2015).
[Crossref]

Zolotarev, V. V.

A. A. Podoskin, O. S. Soboleva, M. S. Zakharov, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and S. O. Slipchenko, “Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures,” Semicond. Sci. Technol. 30(12), 125011 (2015).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, V. V. Vasil’eva, N. A. Pikhtin, A. V. Rozhkov, A. V. Gorbatyuk, V. V. Zolotarev, D. A. Veselov, A. V. Jabotinskii, A. A. Petukhov, I. S. Tarasov, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. Kurniavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range,” Semiconductors 48(5), 697–699 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, V. V. Zolotarev, I. S. Shashkin, A. Y. Leshko, A. V. Lutetskyi, M. G. Rastegaeva, I. S. Tarasov, and P. S. Kop’ev, “Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures,” Semiconductors 48(5), 691–696 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Generation of laser pulses in the MHz range of repetition frequencies by low-voltage AlGaAs/GaAs lasers-thyristors,” IEEE Trans. Electron Dev. (to be published).

Zverkov, M. V.

S. O. Slipchenko, A. A. Podoskin, V. V. Vasil’eva, N. A. Pikhtin, A. V. Rozhkov, A. V. Gorbatyuk, V. V. Zolotarev, D. A. Veselov, A. V. Jabotinskii, A. A. Petukhov, I. S. Tarasov, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. Kurniavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range,” Semiconductors 48(5), 697–699 (2014).
[Crossref]

Appl. Phys. Lett. (1)

B. Lanz, S. N. Vainshtein, and J. T. Kostamovaara, “High power gain-switched laser diode using a superfast GaAs avalanche transistor for pumping,” Appl. Phys. Lett. 89(8), 081122 (2006).
[Crossref]

Electron. Lett. (1)

S. Riecke, K. Posilovic, T. Kettler, D. Seidlitz, V. A. Shchukin, N. N. Ledentsov, K. Lauritsen, and D. Bimberg, “10.7W peak power picosecond pulses from high-brightness photonic band crystal laser diode,” Electron. Lett. 46(20), 1393–1394 (2010).
[Crossref]

IEEE J. Quantum Electron. (1)

X. Wang, P. Crump, H. Wenzel, A. Liero, T. Hoffmann, A. Pietrzak, C. M. Schultz, A. Klehr, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert, and G. Trankle, “Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers,” IEEE J. Quantum Electron. 46(5), 658–665 (2010).
[Crossref]

IEEE J. Sel. Top. Quantum. Electron. (1)

J. M. T. Huikari, E. A. Avrutin, B. S. Ryvkin, J. J. Nissinen, and J. T. Kostamovaara, “High-energy picosecond pulse generation by gain switching in asymmetric waveguide structure multiple quantum well lasers,” IEEE J. Sel. Top. Quantum. Electron. 21(6), 1501206 (2015).
[Crossref]

IEEE Photonics Technol. Lett. (1)

S. O. Slipchenko, A. A. Podoskin, A. V. Rozhkov, N. A. Pikhtin, and I. S. Tarasov, “High-power laser-thyristors with high injection efficiency (λ=890-910 nm),” IEEE Photonics Technol. Lett. 27(3), 307–310 (2015).
[Crossref]

IEEE Trans. Electron Dev. (1)

S. O. Slipchenko, V. S. Yuferev, A. A. Podoskin, O. S. Soboleva, N. A. Pikhtin, and I. S. Tarasov, “Specific features of the injection processes dynamics in high-power laser thyristor,” IEEE Trans. Electron Dev. 62(12), 4091–4096 (2015).
[Crossref]

J. Appl. Phys. (4)

S. O. Slipchenko, A. A. Podoskin, A. V. Rozhkov, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, V. P. Konyaev, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm,” J. Appl. Phys. 116(8), 084503 (2014).
[Crossref]

B. S. Ryvkin and E. A. Avrutin, “Asymmetric, nonbroadened large optical cavity waveguide structures for high-power long-wavelength semiconductor lasers,” J. Appl. Phys. 97(12), 123103 (2005).
[Crossref]

L. V. Asryan and Z. N. Sokolova, “Optical power of semiconductor lasers with a low-dimensional active region,” J. Appl. Phys. 115(2), 023107 (2014).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Spatial dynamics of high current turn-on in low-voltage AlGaAs/GaAs phototransistors,ˮ,” J. Appl. Phys. 119(12), 124513 (2016).
[Crossref]

Laser Phys. (1)

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, and I. S. Tarasov, “Fundamental aspects of closed optical mode formation in Fabry–Perot semiconductor lasers based on AlGaAs/GaAs (905nm) asymmetric heterostructures,ˮ,” Laser Phys. 24(10), 105001 (2014).
[Crossref]

Opt. Express (1)

Proc. SPIE (3)

A. Klehr, H. Wenzel, J. Fricke, F. Bugge, A. Liero, T. Hoffmann, G. Erbert, and G. Trankle, “Generation of spectrally stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier,” Proc. SPIE 9382, 93821I (2015).
[Crossref]

B. Sumpf, A. Klehr, T. N. Vu, G. Erbert, and G. Trankle, “975 nm high-peak power ns-diode laser based MOPA system suitable for water vapor DIAL applications,” Proc. SPIE 9382, 93821K (2015).
[Crossref]

S. Slipchenko, A. Podoskin, O. Soboleva, M. S. Zakharov, K. Bakhvalov, D. Romanovich, N. Pikhtin, I. Tarasov, T. Bagaev, M. Ladugin, A. Marmalyuk, and V. Simakov, “High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems,” Proc. SPIE 9751, 97510P (2016).
[Crossref]

Quantum Electron. (2)

D. A. Veselov, V. A. Kapitonov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, and I. S. Tarasov, “Saturation of light –current characteristics of high-power lasers (l = 1.0 –1.1 mm) in pulsed regime,” Quantum Electron. 44(11), 993–996 (2014).
[Crossref]

D. A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, N. V. Voronkova, and I. S. Tarasov, “Study of the absorption coefficient in layers of a semiconductor laser heterostructure,” Quantum Electron. 45(7), 604–606 (2015).
[Crossref]

Semicond. Sci. Technol. (1)

A. A. Podoskin, O. S. Soboleva, M. S. Zakharov, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, I. S. Tarasov, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and S. O. Slipchenko, “Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures,” Semicond. Sci. Technol. 30(12), 125011 (2015).
[Crossref]

Semiconductors (4)

S. O. Slipchenko, A. A. Podoskin, V. V. Vasil’eva, N. A. Pikhtin, A. V. Rozhkov, A. V. Gorbatyuk, V. V. Zolotarev, D. A. Veselov, A. V. Jabotinskii, A. A. Petukhov, I. S. Tarasov, T. A. Bagaev, M. V. Zverkov, V. P. Konyaev, Y. V. Kurniavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, A. A. Padalitsa, and V. A. Simakov, “On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range,” Semiconductors 48(5), 697–699 (2014).
[Crossref]

A. Y. Leshko, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, E. G. Golikova, Y. A. Ryaboshtan, and I. S. Tarasov, “High power single-mode (l = 1.3–1.6 mm) laser diodes based on quantum well InGaAsP/InP heterostructures,” Semiconductors 36(11), 1308–1314 (2002).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, A. L. Stankevich, N. A. Rudova, A. Y. Leshko, and I. S. Tarasov, “Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures,” Semiconductors 45(5), 673–678 (2011).
[Crossref]

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, V. V. Zolotarev, I. S. Shashkin, A. Y. Leshko, A. V. Lutetskyi, M. G. Rastegaeva, I. S. Tarasov, and P. S. Kop’ev, “Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures,” Semiconductors 48(5), 691–696 (2014).
[Crossref]

Other (1)

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, D. A. Veselov, V. V. Zolotarev, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, and I. S. Tarasov, “Generation of laser pulses in the MHz range of repetition frequencies by low-voltage AlGaAs/GaAs lasers-thyristors,” IEEE Trans. Electron Dev. (to be published).

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Figures (8)

Fig. 1
Fig. 1 Schematic of a laser-thyristor with mesa stripe laser part and the external circuit.
Fig. 2
Fig. 2 Dynamics of the output optical power of a laser-thyristor in the long-pulse mode for various blocking voltages (L = 760 μm, C = 10 nF).
Fig. 3
Fig. 3 Dynamics of the output optical power of a laser-thyristor in the short-pulse mode for various blocking voltages and control currents (L = 760 μm, C = 0.5 nF).
Fig. 4
Fig. 4 (a) Diagram of lasing modes of a laser-thyristor in the long- and short-pulse modes. (b) Dynamics of voltage on the external capacitance and of lasing in the short-pulse mode for U = 10 V and control current pulse amplitudes of 10 and 46 mA (insert: the voltage dynamics for these pulses) (L = 760 μm, C = 0.5 nF).
Fig. 5
Fig. 5 Averaged lasing spectra of a laser-thyristor in the short-pulse mode for various blocking voltages and control currents (L = 760 μm, C = 0.5 nF).
Fig. 6
Fig. 6 Averaged intensity distribution in the near field of a laser-thyristor operating in the short-pulse mode for various blocking voltages and control currents (L = 760 μm, C = 0.5 nF).
Fig. 7
Fig. 7 (a) Intensity distribution of the spontaneous emission along the cavity axis for a laser-thyristor operating in the short-pulse mode at various control current amplitudes. (b) Dependence of the width and peak intensity of the spontaneous emission from the current-localization region on the control current amplitude. (c) Schematic of the laser-thyristor crystal and of the recording direction of spontaneous emission (L = 760 μm, C = 0.5 nF).
Fig. 8
Fig. 8 (a) Output dynamics of the optical power of the laser-thyristor, demonstrating the operation at only the first relaxation peak in the gain-switching mode; (b) lasing dynamics at various points of the near field; (c) voltage dynamics of the laser-thyristor; (d) lasing spectrum for the mode with U = 5.8 V and ICONTR = 25 mA (insert: distribution of the time-averaged near field along the mesa stripe) (L = 760 μm, C = 0.5 nF).

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