Abstract

Low threshold continuous-wave (CW) lasing of current injected InGaN quantum dot (QD) vertical-cavity surface-emitting lasers (VCSELs) was achieved at room temperature. The VCSEL was fabricated by metal bonding technique on a copper substrate to improve the heat dissipation ability of the device. For the first time, lasing was obtained at yellow-green wavelength of 560.4 nm with a low threshold of 0.61 mA, corresponding to a current density of 0.78 kA/cm2. A high degree of polarization of 94% were measured. Despite the operation in the range of “green gap” of GaN-based devices, single longitudinal mode laser emission was clearly achieved due to the high quality of active region based on InGaN QDs and the excellent thermal design of the VCSELs.

© 2016 Optical Society of America

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  1. R. Shimada and H. Morkoç, “Wide bandgap semiconductor-based surface-emitting lasers: recent progress in GaN-based vertical cavity surface-emitting lasers and GaN-/ZnO-based polariton lasers,” Proc. IEEE 98(7), 1220–1233 (2010).
    [Crossref]
  2. T. C. Lu, C. C. Kao, H. C. Kuo, G. S. Huang, and S. C. Wang, “CW lasing of current injection blue GaN-based vertical cavity surface emitting laser,” Appl. Phys. Lett. 92(14), 141102 (2008).
    [Crossref]
  3. T. C. Lu, S. W. Chen, T. T. Wu, P. M. Tu, C. K. Chen, C. H. Chen, Z. Y. Li, H. C. Kuo, and S. C. Wang, “Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature,” Appl. Phys. Lett. 97(7), 071114 (2010).
    [Crossref]
  4. G. Cosendey, A. Castiglia, G. Rossbach, J. F. Carlin, and N. Grandjean, “Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate,” Appl. Phys. Lett. 101(15), 151113 (2012).
    [Crossref]
  5. Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai, “Room-temperature CW lasing of a GaN-based vertical-cavity surface-emitting laser by current injection,” Appl. Phys. Express 1(12), 121102 (2008).
    [Crossref]
  6. D. Kasahara, D. Morita, T. Kosugi, K. Nakagawa, J. Kawamata, Y. Higuchi, H. Matsumura, and T. Mukai, “Demonstration of blue and green GaN-based vertical-cavity surface-emitting lasers by current injection at room temperature,” Appl. Phys. Express 4(7), 072103 (2011).
    [Crossref]
  7. T. Onishi, O. Imafuji, K. Nagamatsu, M. Kawaguchi, K. Yamanaka, and S. Takigawa, “Continuous wave operation of GaN vertical cavity surface emitting lasers at room temperature,” IEEE J. Quantum Electron. 48(9), 1107–1112 (2012).
    [Crossref]
  8. C. Holder, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers,” Appl. Phys. Express 5(9), 092104 (2012).
    [Crossref]
  9. W. J. Liu, X. L. Hu, L. Y. Ying, J. Y. Zhang, and B. P. Zhang, “Room temperature continuous wave lasing of electrically injected GaN-based vertical cavity surface emitting lasers,” Appl. Phys. Lett. 104(25), 251116 (2014).
    [Crossref]
  10. S. Izumi, N. Fuutagawa, T. Hamaguchi, M. Murayama, M. Kuramoto, and H. Narui, “Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers fabricated using epitaxial lateral overgrowth,” Appl. Phys. Express 8(6), 062702 (2015).
    [Crossref]
  11. J. Simon, N. T. Pelekanos, C. Adelmann, E. Martinez-Guerrero, R. André, B. Daudin, L. S. Dang, and H. Mariette, “Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots,” Phys. Rev. B 68(3), 035312 (2003).
    [Crossref]
  12. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
    [Crossref] [PubMed]
  13. E. Taylor, P. R. Edwards, and R. W. Martin, “Colorimetry and efficiency of white LEDs: spectral width dependence,” Phys. Status Solidi., A Appl. Mater. Sci. 209(3), 461–464 (2012).
    [Crossref]
  14. M. Auf der Maur, A. Pecchia, G. Penazzi, W. Rodrigues, and A. Di Carlo, “Efficiency drop in green InGaN/GaN light emitting diodes: The role of random alloy fluctuations,” Phys. Rev. Lett. 116(2), 027401 (2016).
    [Crossref] [PubMed]
  15. K. Omae, Y. Higuchi, K. Nakagawa, H. Matsumura, and T. Mukai, “Improvement in lasing characteristics of GaN-based vertical-cavity surface-emitting lasers fabricated using a GaN substrate,” Appl. Phys. Express 2(5), 052101 (2009).
    [Crossref]
  16. W. W. Chow and F. Jahnke, “On the physics of semiconductor quantum dots for applications in lasers and quantum optics,” Prog. Quantum Electron. 37(3), 109–184 (2013).
    [Crossref]
  17. S. Schulz and E. P. O’Reilly, “Theory of reduced built-in polarization field in nitride-based quantum dots,” Phys. Rev. B 82(3), 033411 (2010).
    [Crossref]
  18. M. Zhang, P. Bhattacharya, and W. Guo, “InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 97(1), 011103 (2010).
    [Crossref]
  19. Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B. Wang, and H. Yang, “Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots,” J. Appl. Phys. 114(9), 093105 (2013).
    [Crossref]
  20. W. J. Liu, X. L. Hu, J. Y. Zhang, G. E. Weng, X. Q. Lv, H. J. Huang, M. Chen, X. M. Cai, L. Y. Ying, and B. P. Zhang, “Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes,” Opt. Mater. 34(8), 1327–1329 (2012).
    [Crossref]
  21. D. Scholz, H. Braun, U. T. Schwarz, S. Brüninghoff, D. Queren, A. Lell, and U. Strauss, “Measurement and simulation of filamentation in (Al,In)GaN laser diodes,” Opt. Express 16(10), 6846–6859 (2008).
    [Crossref] [PubMed]
  22. A. Chtanov, T. Baars, and M. Gal, “Excitation-intensity-dependent photoluminescence in semiconductor quantum wells due to internal electric fields,” Phys. Rev. B Condens. Matter 53(8), 4704–4707 (1996).
    [Crossref] [PubMed]
  23. G. E. Weng, W. R. Zhao, S. Q. Chen, H. Akiyama, Z. C. Li, J. P. Liu, and B. P. Zhang, “Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green,” Nanoscale Res. Lett. 10(31), 31 (2015).
    [Crossref] [PubMed]

2016 (1)

M. Auf der Maur, A. Pecchia, G. Penazzi, W. Rodrigues, and A. Di Carlo, “Efficiency drop in green InGaN/GaN light emitting diodes: The role of random alloy fluctuations,” Phys. Rev. Lett. 116(2), 027401 (2016).
[Crossref] [PubMed]

2015 (2)

S. Izumi, N. Fuutagawa, T. Hamaguchi, M. Murayama, M. Kuramoto, and H. Narui, “Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers fabricated using epitaxial lateral overgrowth,” Appl. Phys. Express 8(6), 062702 (2015).
[Crossref]

G. E. Weng, W. R. Zhao, S. Q. Chen, H. Akiyama, Z. C. Li, J. P. Liu, and B. P. Zhang, “Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green,” Nanoscale Res. Lett. 10(31), 31 (2015).
[Crossref] [PubMed]

2014 (1)

W. J. Liu, X. L. Hu, L. Y. Ying, J. Y. Zhang, and B. P. Zhang, “Room temperature continuous wave lasing of electrically injected GaN-based vertical cavity surface emitting lasers,” Appl. Phys. Lett. 104(25), 251116 (2014).
[Crossref]

2013 (2)

W. W. Chow and F. Jahnke, “On the physics of semiconductor quantum dots for applications in lasers and quantum optics,” Prog. Quantum Electron. 37(3), 109–184 (2013).
[Crossref]

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B. Wang, and H. Yang, “Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots,” J. Appl. Phys. 114(9), 093105 (2013).
[Crossref]

2012 (5)

W. J. Liu, X. L. Hu, J. Y. Zhang, G. E. Weng, X. Q. Lv, H. J. Huang, M. Chen, X. M. Cai, L. Y. Ying, and B. P. Zhang, “Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes,” Opt. Mater. 34(8), 1327–1329 (2012).
[Crossref]

E. Taylor, P. R. Edwards, and R. W. Martin, “Colorimetry and efficiency of white LEDs: spectral width dependence,” Phys. Status Solidi., A Appl. Mater. Sci. 209(3), 461–464 (2012).
[Crossref]

G. Cosendey, A. Castiglia, G. Rossbach, J. F. Carlin, and N. Grandjean, “Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate,” Appl. Phys. Lett. 101(15), 151113 (2012).
[Crossref]

T. Onishi, O. Imafuji, K. Nagamatsu, M. Kawaguchi, K. Yamanaka, and S. Takigawa, “Continuous wave operation of GaN vertical cavity surface emitting lasers at room temperature,” IEEE J. Quantum Electron. 48(9), 1107–1112 (2012).
[Crossref]

C. Holder, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers,” Appl. Phys. Express 5(9), 092104 (2012).
[Crossref]

2011 (1)

D. Kasahara, D. Morita, T. Kosugi, K. Nakagawa, J. Kawamata, Y. Higuchi, H. Matsumura, and T. Mukai, “Demonstration of blue and green GaN-based vertical-cavity surface-emitting lasers by current injection at room temperature,” Appl. Phys. Express 4(7), 072103 (2011).
[Crossref]

2010 (4)

T. C. Lu, S. W. Chen, T. T. Wu, P. M. Tu, C. K. Chen, C. H. Chen, Z. Y. Li, H. C. Kuo, and S. C. Wang, “Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature,” Appl. Phys. Lett. 97(7), 071114 (2010).
[Crossref]

R. Shimada and H. Morkoç, “Wide bandgap semiconductor-based surface-emitting lasers: recent progress in GaN-based vertical cavity surface-emitting lasers and GaN-/ZnO-based polariton lasers,” Proc. IEEE 98(7), 1220–1233 (2010).
[Crossref]

S. Schulz and E. P. O’Reilly, “Theory of reduced built-in polarization field in nitride-based quantum dots,” Phys. Rev. B 82(3), 033411 (2010).
[Crossref]

M. Zhang, P. Bhattacharya, and W. Guo, “InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 97(1), 011103 (2010).
[Crossref]

2009 (1)

K. Omae, Y. Higuchi, K. Nakagawa, H. Matsumura, and T. Mukai, “Improvement in lasing characteristics of GaN-based vertical-cavity surface-emitting lasers fabricated using a GaN substrate,” Appl. Phys. Express 2(5), 052101 (2009).
[Crossref]

2008 (3)

T. C. Lu, C. C. Kao, H. C. Kuo, G. S. Huang, and S. C. Wang, “CW lasing of current injection blue GaN-based vertical cavity surface emitting laser,” Appl. Phys. Lett. 92(14), 141102 (2008).
[Crossref]

Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai, “Room-temperature CW lasing of a GaN-based vertical-cavity surface-emitting laser by current injection,” Appl. Phys. Express 1(12), 121102 (2008).
[Crossref]

D. Scholz, H. Braun, U. T. Schwarz, S. Brüninghoff, D. Queren, A. Lell, and U. Strauss, “Measurement and simulation of filamentation in (Al,In)GaN laser diodes,” Opt. Express 16(10), 6846–6859 (2008).
[Crossref] [PubMed]

2003 (1)

J. Simon, N. T. Pelekanos, C. Adelmann, E. Martinez-Guerrero, R. André, B. Daudin, L. S. Dang, and H. Mariette, “Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots,” Phys. Rev. B 68(3), 035312 (2003).
[Crossref]

2000 (1)

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

1996 (1)

A. Chtanov, T. Baars, and M. Gal, “Excitation-intensity-dependent photoluminescence in semiconductor quantum wells due to internal electric fields,” Phys. Rev. B Condens. Matter 53(8), 4704–4707 (1996).
[Crossref] [PubMed]

Adelmann, C.

J. Simon, N. T. Pelekanos, C. Adelmann, E. Martinez-Guerrero, R. André, B. Daudin, L. S. Dang, and H. Mariette, “Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots,” Phys. Rev. B 68(3), 035312 (2003).
[Crossref]

Akiyama, H.

G. E. Weng, W. R. Zhao, S. Q. Chen, H. Akiyama, Z. C. Li, J. P. Liu, and B. P. Zhang, “Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green,” Nanoscale Res. Lett. 10(31), 31 (2015).
[Crossref] [PubMed]

André, R.

J. Simon, N. T. Pelekanos, C. Adelmann, E. Martinez-Guerrero, R. André, B. Daudin, L. S. Dang, and H. Mariette, “Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots,” Phys. Rev. B 68(3), 035312 (2003).
[Crossref]

Auf der Maur, M.

M. Auf der Maur, A. Pecchia, G. Penazzi, W. Rodrigues, and A. Di Carlo, “Efficiency drop in green InGaN/GaN light emitting diodes: The role of random alloy fluctuations,” Phys. Rev. Lett. 116(2), 027401 (2016).
[Crossref] [PubMed]

Baars, T.

A. Chtanov, T. Baars, and M. Gal, “Excitation-intensity-dependent photoluminescence in semiconductor quantum wells due to internal electric fields,” Phys. Rev. B Condens. Matter 53(8), 4704–4707 (1996).
[Crossref] [PubMed]

Bhattacharya, P.

M. Zhang, P. Bhattacharya, and W. Guo, “InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 97(1), 011103 (2010).
[Crossref]

Brandt, O.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Braun, H.

Brüninghoff, S.

Cai, X. M.

W. J. Liu, X. L. Hu, J. Y. Zhang, G. E. Weng, X. Q. Lv, H. J. Huang, M. Chen, X. M. Cai, L. Y. Ying, and B. P. Zhang, “Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes,” Opt. Mater. 34(8), 1327–1329 (2012).
[Crossref]

Carlin, J. F.

G. Cosendey, A. Castiglia, G. Rossbach, J. F. Carlin, and N. Grandjean, “Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate,” Appl. Phys. Lett. 101(15), 151113 (2012).
[Crossref]

Castiglia, A.

G. Cosendey, A. Castiglia, G. Rossbach, J. F. Carlin, and N. Grandjean, “Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate,” Appl. Phys. Lett. 101(15), 151113 (2012).
[Crossref]

Chen, C. H.

T. C. Lu, S. W. Chen, T. T. Wu, P. M. Tu, C. K. Chen, C. H. Chen, Z. Y. Li, H. C. Kuo, and S. C. Wang, “Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature,” Appl. Phys. Lett. 97(7), 071114 (2010).
[Crossref]

Chen, C. K.

T. C. Lu, S. W. Chen, T. T. Wu, P. M. Tu, C. K. Chen, C. H. Chen, Z. Y. Li, H. C. Kuo, and S. C. Wang, “Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature,” Appl. Phys. Lett. 97(7), 071114 (2010).
[Crossref]

Chen, M.

W. J. Liu, X. L. Hu, J. Y. Zhang, G. E. Weng, X. Q. Lv, H. J. Huang, M. Chen, X. M. Cai, L. Y. Ying, and B. P. Zhang, “Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes,” Opt. Mater. 34(8), 1327–1329 (2012).
[Crossref]

Chen, S. Q.

G. E. Weng, W. R. Zhao, S. Q. Chen, H. Akiyama, Z. C. Li, J. P. Liu, and B. P. Zhang, “Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green,” Nanoscale Res. Lett. 10(31), 31 (2015).
[Crossref] [PubMed]

Chen, S. W.

T. C. Lu, S. W. Chen, T. T. Wu, P. M. Tu, C. K. Chen, C. H. Chen, Z. Y. Li, H. C. Kuo, and S. C. Wang, “Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature,” Appl. Phys. Lett. 97(7), 071114 (2010).
[Crossref]

Chow, W. W.

W. W. Chow and F. Jahnke, “On the physics of semiconductor quantum dots for applications in lasers and quantum optics,” Prog. Quantum Electron. 37(3), 109–184 (2013).
[Crossref]

Chtanov, A.

A. Chtanov, T. Baars, and M. Gal, “Excitation-intensity-dependent photoluminescence in semiconductor quantum wells due to internal electric fields,” Phys. Rev. B Condens. Matter 53(8), 4704–4707 (1996).
[Crossref] [PubMed]

Cosendey, G.

G. Cosendey, A. Castiglia, G. Rossbach, J. F. Carlin, and N. Grandjean, “Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate,” Appl. Phys. Lett. 101(15), 151113 (2012).
[Crossref]

Dang, L. S.

J. Simon, N. T. Pelekanos, C. Adelmann, E. Martinez-Guerrero, R. André, B. Daudin, L. S. Dang, and H. Mariette, “Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots,” Phys. Rev. B 68(3), 035312 (2003).
[Crossref]

Daudin, B.

J. Simon, N. T. Pelekanos, C. Adelmann, E. Martinez-Guerrero, R. André, B. Daudin, L. S. Dang, and H. Mariette, “Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots,” Phys. Rev. B 68(3), 035312 (2003).
[Crossref]

DenBaars, S. P.

C. Holder, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers,” Appl. Phys. Express 5(9), 092104 (2012).
[Crossref]

Di Carlo, A.

M. Auf der Maur, A. Pecchia, G. Penazzi, W. Rodrigues, and A. Di Carlo, “Efficiency drop in green InGaN/GaN light emitting diodes: The role of random alloy fluctuations,” Phys. Rev. Lett. 116(2), 027401 (2016).
[Crossref] [PubMed]

Edwards, P. R.

E. Taylor, P. R. Edwards, and R. W. Martin, “Colorimetry and efficiency of white LEDs: spectral width dependence,” Phys. Status Solidi., A Appl. Mater. Sci. 209(3), 461–464 (2012).
[Crossref]

Feezell, D.

C. Holder, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers,” Appl. Phys. Express 5(9), 092104 (2012).
[Crossref]

Feng, M. X.

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B. Wang, and H. Yang, “Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots,” J. Appl. Phys. 114(9), 093105 (2013).
[Crossref]

Fuutagawa, N.

S. Izumi, N. Fuutagawa, T. Hamaguchi, M. Murayama, M. Kuramoto, and H. Narui, “Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers fabricated using epitaxial lateral overgrowth,” Appl. Phys. Express 8(6), 062702 (2015).
[Crossref]

Gal, M.

A. Chtanov, T. Baars, and M. Gal, “Excitation-intensity-dependent photoluminescence in semiconductor quantum wells due to internal electric fields,” Phys. Rev. B Condens. Matter 53(8), 4704–4707 (1996).
[Crossref] [PubMed]

Grahn, H. T.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Grandjean, N.

G. Cosendey, A. Castiglia, G. Rossbach, J. F. Carlin, and N. Grandjean, “Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate,” Appl. Phys. Lett. 101(15), 151113 (2012).
[Crossref]

Guo, W.

M. Zhang, P. Bhattacharya, and W. Guo, “InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 97(1), 011103 (2010).
[Crossref]

Hamaguchi, T.

S. Izumi, N. Fuutagawa, T. Hamaguchi, M. Murayama, M. Kuramoto, and H. Narui, “Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers fabricated using epitaxial lateral overgrowth,” Appl. Phys. Express 8(6), 062702 (2015).
[Crossref]

Higuchi, Y.

D. Kasahara, D. Morita, T. Kosugi, K. Nakagawa, J. Kawamata, Y. Higuchi, H. Matsumura, and T. Mukai, “Demonstration of blue and green GaN-based vertical-cavity surface-emitting lasers by current injection at room temperature,” Appl. Phys. Express 4(7), 072103 (2011).
[Crossref]

K. Omae, Y. Higuchi, K. Nakagawa, H. Matsumura, and T. Mukai, “Improvement in lasing characteristics of GaN-based vertical-cavity surface-emitting lasers fabricated using a GaN substrate,” Appl. Phys. Express 2(5), 052101 (2009).
[Crossref]

Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai, “Room-temperature CW lasing of a GaN-based vertical-cavity surface-emitting laser by current injection,” Appl. Phys. Express 1(12), 121102 (2008).
[Crossref]

Holder, C.

C. Holder, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers,” Appl. Phys. Express 5(9), 092104 (2012).
[Crossref]

Hu, X. L.

W. J. Liu, X. L. Hu, L. Y. Ying, J. Y. Zhang, and B. P. Zhang, “Room temperature continuous wave lasing of electrically injected GaN-based vertical cavity surface emitting lasers,” Appl. Phys. Lett. 104(25), 251116 (2014).
[Crossref]

W. J. Liu, X. L. Hu, J. Y. Zhang, G. E. Weng, X. Q. Lv, H. J. Huang, M. Chen, X. M. Cai, L. Y. Ying, and B. P. Zhang, “Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes,” Opt. Mater. 34(8), 1327–1329 (2012).
[Crossref]

Huang, G. S.

T. C. Lu, C. C. Kao, H. C. Kuo, G. S. Huang, and S. C. Wang, “CW lasing of current injection blue GaN-based vertical cavity surface emitting laser,” Appl. Phys. Lett. 92(14), 141102 (2008).
[Crossref]

Huang, H. J.

W. J. Liu, X. L. Hu, J. Y. Zhang, G. E. Weng, X. Q. Lv, H. J. Huang, M. Chen, X. M. Cai, L. Y. Ying, and B. P. Zhang, “Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes,” Opt. Mater. 34(8), 1327–1329 (2012).
[Crossref]

Imafuji, O.

T. Onishi, O. Imafuji, K. Nagamatsu, M. Kawaguchi, K. Yamanaka, and S. Takigawa, “Continuous wave operation of GaN vertical cavity surface emitting lasers at room temperature,” IEEE J. Quantum Electron. 48(9), 1107–1112 (2012).
[Crossref]

Izumi, S.

S. Izumi, N. Fuutagawa, T. Hamaguchi, M. Murayama, M. Kuramoto, and H. Narui, “Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers fabricated using epitaxial lateral overgrowth,” Appl. Phys. Express 8(6), 062702 (2015).
[Crossref]

Jahnke, F.

W. W. Chow and F. Jahnke, “On the physics of semiconductor quantum dots for applications in lasers and quantum optics,” Prog. Quantum Electron. 37(3), 109–184 (2013).
[Crossref]

Jiang, D. S.

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B. Wang, and H. Yang, “Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots,” J. Appl. Phys. 114(9), 093105 (2013).
[Crossref]

Kao, C. C.

T. C. Lu, C. C. Kao, H. C. Kuo, G. S. Huang, and S. C. Wang, “CW lasing of current injection blue GaN-based vertical cavity surface emitting laser,” Appl. Phys. Lett. 92(14), 141102 (2008).
[Crossref]

Kasahara, D.

D. Kasahara, D. Morita, T. Kosugi, K. Nakagawa, J. Kawamata, Y. Higuchi, H. Matsumura, and T. Mukai, “Demonstration of blue and green GaN-based vertical-cavity surface-emitting lasers by current injection at room temperature,” Appl. Phys. Express 4(7), 072103 (2011).
[Crossref]

Kawaguchi, M.

T. Onishi, O. Imafuji, K. Nagamatsu, M. Kawaguchi, K. Yamanaka, and S. Takigawa, “Continuous wave operation of GaN vertical cavity surface emitting lasers at room temperature,” IEEE J. Quantum Electron. 48(9), 1107–1112 (2012).
[Crossref]

Kawamata, J.

D. Kasahara, D. Morita, T. Kosugi, K. Nakagawa, J. Kawamata, Y. Higuchi, H. Matsumura, and T. Mukai, “Demonstration of blue and green GaN-based vertical-cavity surface-emitting lasers by current injection at room temperature,” Appl. Phys. Express 4(7), 072103 (2011).
[Crossref]

Kosugi, T.

D. Kasahara, D. Morita, T. Kosugi, K. Nakagawa, J. Kawamata, Y. Higuchi, H. Matsumura, and T. Mukai, “Demonstration of blue and green GaN-based vertical-cavity surface-emitting lasers by current injection at room temperature,” Appl. Phys. Express 4(7), 072103 (2011).
[Crossref]

Kuo, H. C.

T. C. Lu, S. W. Chen, T. T. Wu, P. M. Tu, C. K. Chen, C. H. Chen, Z. Y. Li, H. C. Kuo, and S. C. Wang, “Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature,” Appl. Phys. Lett. 97(7), 071114 (2010).
[Crossref]

T. C. Lu, C. C. Kao, H. C. Kuo, G. S. Huang, and S. C. Wang, “CW lasing of current injection blue GaN-based vertical cavity surface emitting laser,” Appl. Phys. Lett. 92(14), 141102 (2008).
[Crossref]

Kuramoto, M.

S. Izumi, N. Fuutagawa, T. Hamaguchi, M. Murayama, M. Kuramoto, and H. Narui, “Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers fabricated using epitaxial lateral overgrowth,” Appl. Phys. Express 8(6), 062702 (2015).
[Crossref]

Lell, A.

Li, D. Y.

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B. Wang, and H. Yang, “Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots,” J. Appl. Phys. 114(9), 093105 (2013).
[Crossref]

Li, Z. C.

G. E. Weng, W. R. Zhao, S. Q. Chen, H. Akiyama, Z. C. Li, J. P. Liu, and B. P. Zhang, “Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green,” Nanoscale Res. Lett. 10(31), 31 (2015).
[Crossref] [PubMed]

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B. Wang, and H. Yang, “Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots,” J. Appl. Phys. 114(9), 093105 (2013).
[Crossref]

Li, Z. Y.

T. C. Lu, S. W. Chen, T. T. Wu, P. M. Tu, C. K. Chen, C. H. Chen, Z. Y. Li, H. C. Kuo, and S. C. Wang, “Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature,” Appl. Phys. Lett. 97(7), 071114 (2010).
[Crossref]

Liu, J. P.

G. E. Weng, W. R. Zhao, S. Q. Chen, H. Akiyama, Z. C. Li, J. P. Liu, and B. P. Zhang, “Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green,” Nanoscale Res. Lett. 10(31), 31 (2015).
[Crossref] [PubMed]

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B. Wang, and H. Yang, “Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots,” J. Appl. Phys. 114(9), 093105 (2013).
[Crossref]

Liu, W. J.

W. J. Liu, X. L. Hu, L. Y. Ying, J. Y. Zhang, and B. P. Zhang, “Room temperature continuous wave lasing of electrically injected GaN-based vertical cavity surface emitting lasers,” Appl. Phys. Lett. 104(25), 251116 (2014).
[Crossref]

W. J. Liu, X. L. Hu, J. Y. Zhang, G. E. Weng, X. Q. Lv, H. J. Huang, M. Chen, X. M. Cai, L. Y. Ying, and B. P. Zhang, “Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes,” Opt. Mater. 34(8), 1327–1329 (2012).
[Crossref]

Lu, T. C.

T. C. Lu, S. W. Chen, T. T. Wu, P. M. Tu, C. K. Chen, C. H. Chen, Z. Y. Li, H. C. Kuo, and S. C. Wang, “Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature,” Appl. Phys. Lett. 97(7), 071114 (2010).
[Crossref]

T. C. Lu, C. C. Kao, H. C. Kuo, G. S. Huang, and S. C. Wang, “CW lasing of current injection blue GaN-based vertical cavity surface emitting laser,” Appl. Phys. Lett. 92(14), 141102 (2008).
[Crossref]

Lv, X. Q.

W. J. Liu, X. L. Hu, J. Y. Zhang, G. E. Weng, X. Q. Lv, H. J. Huang, M. Chen, X. M. Cai, L. Y. Ying, and B. P. Zhang, “Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes,” Opt. Mater. 34(8), 1327–1329 (2012).
[Crossref]

Mariette, H.

J. Simon, N. T. Pelekanos, C. Adelmann, E. Martinez-Guerrero, R. André, B. Daudin, L. S. Dang, and H. Mariette, “Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots,” Phys. Rev. B 68(3), 035312 (2003).
[Crossref]

Martin, R. W.

E. Taylor, P. R. Edwards, and R. W. Martin, “Colorimetry and efficiency of white LEDs: spectral width dependence,” Phys. Status Solidi., A Appl. Mater. Sci. 209(3), 461–464 (2012).
[Crossref]

Martinez-Guerrero, E.

J. Simon, N. T. Pelekanos, C. Adelmann, E. Martinez-Guerrero, R. André, B. Daudin, L. S. Dang, and H. Mariette, “Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots,” Phys. Rev. B 68(3), 035312 (2003).
[Crossref]

Matsumura, H.

D. Kasahara, D. Morita, T. Kosugi, K. Nakagawa, J. Kawamata, Y. Higuchi, H. Matsumura, and T. Mukai, “Demonstration of blue and green GaN-based vertical-cavity surface-emitting lasers by current injection at room temperature,” Appl. Phys. Express 4(7), 072103 (2011).
[Crossref]

K. Omae, Y. Higuchi, K. Nakagawa, H. Matsumura, and T. Mukai, “Improvement in lasing characteristics of GaN-based vertical-cavity surface-emitting lasers fabricated using a GaN substrate,” Appl. Phys. Express 2(5), 052101 (2009).
[Crossref]

Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai, “Room-temperature CW lasing of a GaN-based vertical-cavity surface-emitting laser by current injection,” Appl. Phys. Express 1(12), 121102 (2008).
[Crossref]

Menniger, J.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Morita, D.

D. Kasahara, D. Morita, T. Kosugi, K. Nakagawa, J. Kawamata, Y. Higuchi, H. Matsumura, and T. Mukai, “Demonstration of blue and green GaN-based vertical-cavity surface-emitting lasers by current injection at room temperature,” Appl. Phys. Express 4(7), 072103 (2011).
[Crossref]

Morkoç, H.

R. Shimada and H. Morkoç, “Wide bandgap semiconductor-based surface-emitting lasers: recent progress in GaN-based vertical cavity surface-emitting lasers and GaN-/ZnO-based polariton lasers,” Proc. IEEE 98(7), 1220–1233 (2010).
[Crossref]

Mukai, T.

D. Kasahara, D. Morita, T. Kosugi, K. Nakagawa, J. Kawamata, Y. Higuchi, H. Matsumura, and T. Mukai, “Demonstration of blue and green GaN-based vertical-cavity surface-emitting lasers by current injection at room temperature,” Appl. Phys. Express 4(7), 072103 (2011).
[Crossref]

K. Omae, Y. Higuchi, K. Nakagawa, H. Matsumura, and T. Mukai, “Improvement in lasing characteristics of GaN-based vertical-cavity surface-emitting lasers fabricated using a GaN substrate,” Appl. Phys. Express 2(5), 052101 (2009).
[Crossref]

Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai, “Room-temperature CW lasing of a GaN-based vertical-cavity surface-emitting laser by current injection,” Appl. Phys. Express 1(12), 121102 (2008).
[Crossref]

Murayama, M.

S. Izumi, N. Fuutagawa, T. Hamaguchi, M. Murayama, M. Kuramoto, and H. Narui, “Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers fabricated using epitaxial lateral overgrowth,” Appl. Phys. Express 8(6), 062702 (2015).
[Crossref]

Nagamatsu, K.

T. Onishi, O. Imafuji, K. Nagamatsu, M. Kawaguchi, K. Yamanaka, and S. Takigawa, “Continuous wave operation of GaN vertical cavity surface emitting lasers at room temperature,” IEEE J. Quantum Electron. 48(9), 1107–1112 (2012).
[Crossref]

Nakagawa, K.

D. Kasahara, D. Morita, T. Kosugi, K. Nakagawa, J. Kawamata, Y. Higuchi, H. Matsumura, and T. Mukai, “Demonstration of blue and green GaN-based vertical-cavity surface-emitting lasers by current injection at room temperature,” Appl. Phys. Express 4(7), 072103 (2011).
[Crossref]

K. Omae, Y. Higuchi, K. Nakagawa, H. Matsumura, and T. Mukai, “Improvement in lasing characteristics of GaN-based vertical-cavity surface-emitting lasers fabricated using a GaN substrate,” Appl. Phys. Express 2(5), 052101 (2009).
[Crossref]

Nakamura, S.

C. Holder, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers,” Appl. Phys. Express 5(9), 092104 (2012).
[Crossref]

Narui, H.

S. Izumi, N. Fuutagawa, T. Hamaguchi, M. Murayama, M. Kuramoto, and H. Narui, “Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers fabricated using epitaxial lateral overgrowth,” Appl. Phys. Express 8(6), 062702 (2015).
[Crossref]

O’Reilly, E. P.

S. Schulz and E. P. O’Reilly, “Theory of reduced built-in polarization field in nitride-based quantum dots,” Phys. Rev. B 82(3), 033411 (2010).
[Crossref]

Omae, K.

K. Omae, Y. Higuchi, K. Nakagawa, H. Matsumura, and T. Mukai, “Improvement in lasing characteristics of GaN-based vertical-cavity surface-emitting lasers fabricated using a GaN substrate,” Appl. Phys. Express 2(5), 052101 (2009).
[Crossref]

Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai, “Room-temperature CW lasing of a GaN-based vertical-cavity surface-emitting laser by current injection,” Appl. Phys. Express 1(12), 121102 (2008).
[Crossref]

Onishi, T.

T. Onishi, O. Imafuji, K. Nagamatsu, M. Kawaguchi, K. Yamanaka, and S. Takigawa, “Continuous wave operation of GaN vertical cavity surface emitting lasers at room temperature,” IEEE J. Quantum Electron. 48(9), 1107–1112 (2012).
[Crossref]

Pecchia, A.

M. Auf der Maur, A. Pecchia, G. Penazzi, W. Rodrigues, and A. Di Carlo, “Efficiency drop in green InGaN/GaN light emitting diodes: The role of random alloy fluctuations,” Phys. Rev. Lett. 116(2), 027401 (2016).
[Crossref] [PubMed]

Pelekanos, N. T.

J. Simon, N. T. Pelekanos, C. Adelmann, E. Martinez-Guerrero, R. André, B. Daudin, L. S. Dang, and H. Mariette, “Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots,” Phys. Rev. B 68(3), 035312 (2003).
[Crossref]

Penazzi, G.

M. Auf der Maur, A. Pecchia, G. Penazzi, W. Rodrigues, and A. Di Carlo, “Efficiency drop in green InGaN/GaN light emitting diodes: The role of random alloy fluctuations,” Phys. Rev. Lett. 116(2), 027401 (2016).
[Crossref] [PubMed]

Ploog, K. H.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Queren, D.

Ramsteiner, M.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Reiche, M.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Rodrigues, W.

M. Auf der Maur, A. Pecchia, G. Penazzi, W. Rodrigues, and A. Di Carlo, “Efficiency drop in green InGaN/GaN light emitting diodes: The role of random alloy fluctuations,” Phys. Rev. Lett. 116(2), 027401 (2016).
[Crossref] [PubMed]

Rossbach, G.

G. Cosendey, A. Castiglia, G. Rossbach, J. F. Carlin, and N. Grandjean, “Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate,” Appl. Phys. Lett. 101(15), 151113 (2012).
[Crossref]

Scholz, D.

Schulz, S.

S. Schulz and E. P. O’Reilly, “Theory of reduced built-in polarization field in nitride-based quantum dots,” Phys. Rev. B 82(3), 033411 (2010).
[Crossref]

Schwarz, U. T.

Shimada, R.

R. Shimada and H. Morkoç, “Wide bandgap semiconductor-based surface-emitting lasers: recent progress in GaN-based vertical cavity surface-emitting lasers and GaN-/ZnO-based polariton lasers,” Proc. IEEE 98(7), 1220–1233 (2010).
[Crossref]

Simon, J.

J. Simon, N. T. Pelekanos, C. Adelmann, E. Martinez-Guerrero, R. André, B. Daudin, L. S. Dang, and H. Mariette, “Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots,” Phys. Rev. B 68(3), 035312 (2003).
[Crossref]

Speck, J. S.

C. Holder, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers,” Appl. Phys. Express 5(9), 092104 (2012).
[Crossref]

Strauss, U.

Sun, Q.

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B. Wang, and H. Yang, “Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots,” J. Appl. Phys. 114(9), 093105 (2013).
[Crossref]

Takigawa, S.

T. Onishi, O. Imafuji, K. Nagamatsu, M. Kawaguchi, K. Yamanaka, and S. Takigawa, “Continuous wave operation of GaN vertical cavity surface emitting lasers at room temperature,” IEEE J. Quantum Electron. 48(9), 1107–1112 (2012).
[Crossref]

Taylor, E.

E. Taylor, P. R. Edwards, and R. W. Martin, “Colorimetry and efficiency of white LEDs: spectral width dependence,” Phys. Status Solidi., A Appl. Mater. Sci. 209(3), 461–464 (2012).
[Crossref]

Trampert, A.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Tu, P. M.

T. C. Lu, S. W. Chen, T. T. Wu, P. M. Tu, C. K. Chen, C. H. Chen, Z. Y. Li, H. C. Kuo, and S. C. Wang, “Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature,” Appl. Phys. Lett. 97(7), 071114 (2010).
[Crossref]

Waltereit, P.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Wang, H.

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B. Wang, and H. Yang, “Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots,” J. Appl. Phys. 114(9), 093105 (2013).
[Crossref]

Wang, H. B.

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B. Wang, and H. Yang, “Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots,” J. Appl. Phys. 114(9), 093105 (2013).
[Crossref]

Wang, S. C.

T. C. Lu, S. W. Chen, T. T. Wu, P. M. Tu, C. K. Chen, C. H. Chen, Z. Y. Li, H. C. Kuo, and S. C. Wang, “Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature,” Appl. Phys. Lett. 97(7), 071114 (2010).
[Crossref]

T. C. Lu, C. C. Kao, H. C. Kuo, G. S. Huang, and S. C. Wang, “CW lasing of current injection blue GaN-based vertical cavity surface emitting laser,” Appl. Phys. Lett. 92(14), 141102 (2008).
[Crossref]

Weng, G. E.

G. E. Weng, W. R. Zhao, S. Q. Chen, H. Akiyama, Z. C. Li, J. P. Liu, and B. P. Zhang, “Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green,” Nanoscale Res. Lett. 10(31), 31 (2015).
[Crossref] [PubMed]

W. J. Liu, X. L. Hu, J. Y. Zhang, G. E. Weng, X. Q. Lv, H. J. Huang, M. Chen, X. M. Cai, L. Y. Ying, and B. P. Zhang, “Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes,” Opt. Mater. 34(8), 1327–1329 (2012).
[Crossref]

Wu, T. T.

T. C. Lu, S. W. Chen, T. T. Wu, P. M. Tu, C. K. Chen, C. H. Chen, Z. Y. Li, H. C. Kuo, and S. C. Wang, “Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature,” Appl. Phys. Lett. 97(7), 071114 (2010).
[Crossref]

Yamanaka, K.

T. Onishi, O. Imafuji, K. Nagamatsu, M. Kawaguchi, K. Yamanaka, and S. Takigawa, “Continuous wave operation of GaN vertical cavity surface emitting lasers at room temperature,” IEEE J. Quantum Electron. 48(9), 1107–1112 (2012).
[Crossref]

Yang, H.

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B. Wang, and H. Yang, “Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots,” J. Appl. Phys. 114(9), 093105 (2013).
[Crossref]

Ying, L. Y.

W. J. Liu, X. L. Hu, L. Y. Ying, J. Y. Zhang, and B. P. Zhang, “Room temperature continuous wave lasing of electrically injected GaN-based vertical cavity surface emitting lasers,” Appl. Phys. Lett. 104(25), 251116 (2014).
[Crossref]

W. J. Liu, X. L. Hu, J. Y. Zhang, G. E. Weng, X. Q. Lv, H. J. Huang, M. Chen, X. M. Cai, L. Y. Ying, and B. P. Zhang, “Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes,” Opt. Mater. 34(8), 1327–1329 (2012).
[Crossref]

Zhang, B. P.

G. E. Weng, W. R. Zhao, S. Q. Chen, H. Akiyama, Z. C. Li, J. P. Liu, and B. P. Zhang, “Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green,” Nanoscale Res. Lett. 10(31), 31 (2015).
[Crossref] [PubMed]

W. J. Liu, X. L. Hu, L. Y. Ying, J. Y. Zhang, and B. P. Zhang, “Room temperature continuous wave lasing of electrically injected GaN-based vertical cavity surface emitting lasers,” Appl. Phys. Lett. 104(25), 251116 (2014).
[Crossref]

W. J. Liu, X. L. Hu, J. Y. Zhang, G. E. Weng, X. Q. Lv, H. J. Huang, M. Chen, X. M. Cai, L. Y. Ying, and B. P. Zhang, “Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes,” Opt. Mater. 34(8), 1327–1329 (2012).
[Crossref]

Zhang, J. Y.

W. J. Liu, X. L. Hu, L. Y. Ying, J. Y. Zhang, and B. P. Zhang, “Room temperature continuous wave lasing of electrically injected GaN-based vertical cavity surface emitting lasers,” Appl. Phys. Lett. 104(25), 251116 (2014).
[Crossref]

W. J. Liu, X. L. Hu, J. Y. Zhang, G. E. Weng, X. Q. Lv, H. J. Huang, M. Chen, X. M. Cai, L. Y. Ying, and B. P. Zhang, “Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes,” Opt. Mater. 34(8), 1327–1329 (2012).
[Crossref]

Zhang, L. Q.

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B. Wang, and H. Yang, “Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots,” J. Appl. Phys. 114(9), 093105 (2013).
[Crossref]

Zhang, M.

M. Zhang, P. Bhattacharya, and W. Guo, “InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 97(1), 011103 (2010).
[Crossref]

Zhang, S. M.

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B. Wang, and H. Yang, “Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots,” J. Appl. Phys. 114(9), 093105 (2013).
[Crossref]

Zhao, W. R.

G. E. Weng, W. R. Zhao, S. Q. Chen, H. Akiyama, Z. C. Li, J. P. Liu, and B. P. Zhang, “Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green,” Nanoscale Res. Lett. 10(31), 31 (2015).
[Crossref] [PubMed]

Zhou, K.

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B. Wang, and H. Yang, “Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots,” J. Appl. Phys. 114(9), 093105 (2013).
[Crossref]

Appl. Phys. Express (5)

Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai, “Room-temperature CW lasing of a GaN-based vertical-cavity surface-emitting laser by current injection,” Appl. Phys. Express 1(12), 121102 (2008).
[Crossref]

D. Kasahara, D. Morita, T. Kosugi, K. Nakagawa, J. Kawamata, Y. Higuchi, H. Matsumura, and T. Mukai, “Demonstration of blue and green GaN-based vertical-cavity surface-emitting lasers by current injection at room temperature,” Appl. Phys. Express 4(7), 072103 (2011).
[Crossref]

C. Holder, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers,” Appl. Phys. Express 5(9), 092104 (2012).
[Crossref]

S. Izumi, N. Fuutagawa, T. Hamaguchi, M. Murayama, M. Kuramoto, and H. Narui, “Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers fabricated using epitaxial lateral overgrowth,” Appl. Phys. Express 8(6), 062702 (2015).
[Crossref]

K. Omae, Y. Higuchi, K. Nakagawa, H. Matsumura, and T. Mukai, “Improvement in lasing characteristics of GaN-based vertical-cavity surface-emitting lasers fabricated using a GaN substrate,” Appl. Phys. Express 2(5), 052101 (2009).
[Crossref]

Appl. Phys. Lett. (5)

W. J. Liu, X. L. Hu, L. Y. Ying, J. Y. Zhang, and B. P. Zhang, “Room temperature continuous wave lasing of electrically injected GaN-based vertical cavity surface emitting lasers,” Appl. Phys. Lett. 104(25), 251116 (2014).
[Crossref]

T. C. Lu, C. C. Kao, H. C. Kuo, G. S. Huang, and S. C. Wang, “CW lasing of current injection blue GaN-based vertical cavity surface emitting laser,” Appl. Phys. Lett. 92(14), 141102 (2008).
[Crossref]

T. C. Lu, S. W. Chen, T. T. Wu, P. M. Tu, C. K. Chen, C. H. Chen, Z. Y. Li, H. C. Kuo, and S. C. Wang, “Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature,” Appl. Phys. Lett. 97(7), 071114 (2010).
[Crossref]

G. Cosendey, A. Castiglia, G. Rossbach, J. F. Carlin, and N. Grandjean, “Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate,” Appl. Phys. Lett. 101(15), 151113 (2012).
[Crossref]

M. Zhang, P. Bhattacharya, and W. Guo, “InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 97(1), 011103 (2010).
[Crossref]

IEEE J. Quantum Electron. (1)

T. Onishi, O. Imafuji, K. Nagamatsu, M. Kawaguchi, K. Yamanaka, and S. Takigawa, “Continuous wave operation of GaN vertical cavity surface emitting lasers at room temperature,” IEEE J. Quantum Electron. 48(9), 1107–1112 (2012).
[Crossref]

J. Appl. Phys. (1)

Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B. Wang, and H. Yang, “Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots,” J. Appl. Phys. 114(9), 093105 (2013).
[Crossref]

Nanoscale Res. Lett. (1)

G. E. Weng, W. R. Zhao, S. Q. Chen, H. Akiyama, Z. C. Li, J. P. Liu, and B. P. Zhang, “Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green,” Nanoscale Res. Lett. 10(31), 31 (2015).
[Crossref] [PubMed]

Nature (1)

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Opt. Express (1)

Opt. Mater. (1)

W. J. Liu, X. L. Hu, J. Y. Zhang, G. E. Weng, X. Q. Lv, H. J. Huang, M. Chen, X. M. Cai, L. Y. Ying, and B. P. Zhang, “Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes,” Opt. Mater. 34(8), 1327–1329 (2012).
[Crossref]

Phys. Rev. B (2)

J. Simon, N. T. Pelekanos, C. Adelmann, E. Martinez-Guerrero, R. André, B. Daudin, L. S. Dang, and H. Mariette, “Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots,” Phys. Rev. B 68(3), 035312 (2003).
[Crossref]

S. Schulz and E. P. O’Reilly, “Theory of reduced built-in polarization field in nitride-based quantum dots,” Phys. Rev. B 82(3), 033411 (2010).
[Crossref]

Phys. Rev. B Condens. Matter (1)

A. Chtanov, T. Baars, and M. Gal, “Excitation-intensity-dependent photoluminescence in semiconductor quantum wells due to internal electric fields,” Phys. Rev. B Condens. Matter 53(8), 4704–4707 (1996).
[Crossref] [PubMed]

Phys. Rev. Lett. (1)

M. Auf der Maur, A. Pecchia, G. Penazzi, W. Rodrigues, and A. Di Carlo, “Efficiency drop in green InGaN/GaN light emitting diodes: The role of random alloy fluctuations,” Phys. Rev. Lett. 116(2), 027401 (2016).
[Crossref] [PubMed]

Phys. Status Solidi., A Appl. Mater. Sci. (1)

E. Taylor, P. R. Edwards, and R. W. Martin, “Colorimetry and efficiency of white LEDs: spectral width dependence,” Phys. Status Solidi., A Appl. Mater. Sci. 209(3), 461–464 (2012).
[Crossref]

Proc. IEEE (1)

R. Shimada and H. Morkoç, “Wide bandgap semiconductor-based surface-emitting lasers: recent progress in GaN-based vertical cavity surface-emitting lasers and GaN-/ZnO-based polariton lasers,” Proc. IEEE 98(7), 1220–1233 (2010).
[Crossref]

Prog. Quantum Electron. (1)

W. W. Chow and F. Jahnke, “On the physics of semiconductor quantum dots for applications in lasers and quantum optics,” Prog. Quantum Electron. 37(3), 109–184 (2013).
[Crossref]

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Figures (4)

Fig. 1
Fig. 1

(a) Cross-sectional schematic of the fabricated InGaN QD VCSEL. (b) Picture of the VCSEL array (left) and an enlarged optical microscopy image of the device (right).

Fig. 2
Fig. 2

(a) PL spectrum of the InGaN QD sample excited by a 405 nm laser diode at 300 K. (b) I-L and I-V characteristics of the VCSEL with a current aperture of 10 μm diameter under CW operation at 300 K.

Fig. 3
Fig. 3

(a) Laser emission spectra at various injection current levels measured at 300 K. (b) Laser emission linewidth versus the injection current. (c) Polarization characteristics of the laser emission at injection current of 1.96 Ith.

Fig. 4
Fig. 4

(a) Excitation power dependence of PL spectra. (b) Calculated electric field distribution for the 560.4 nm cavity-mode of the InGaN QD VCSEL.

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