Abstract

Flexible vertical InGaN micro-light emitting diode (micro-LED) arrays have been fabricated and characterized for potential applications in flexible micro-displays and visible light communication. The LED epitaxial layers were transferred from initial sapphire substrates to flexible AuSn substrates by metal bonding and laser lift off techniques. The current versus voltage characteristics of flexible micro-LEDs degraded after bending the devices, but the electroluminescence spectra show little shift even under a very small bending radius 3 mm. The high thermal conductivity of flexible metal substrates enables high thermal saturation current density and high light output power of the flexible micro-LEDs, benefiting the potential applications in flexible high-brightness micro-displays and high-speed visible light communication. We have achieved ~40 MHz modulation bandwidth and 120 Mbit/s data transmission speed for a typical flexible micro-LED.

© 2016 Optical Society of America

Full Article  |  PDF Article
OSA Recommended Articles
External stress effects on the optical and electrical properties of flexible InGaN-based green light-emitting diodes

Ray-Hua Horng, Ching-Ho Tien, Shih-Hao Chuang, Keng-Chen Liu, and Dong-Sing Wuu
Opt. Express 23(24) 31334-31341 (2015)

GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure

Jinn-Kong Sheu, Fu-Bang Chen, Wei-Yu Yen, Yen-Chin Wang, Chun-Nan Liu, Yu-Hsiang Yeh, and Ming-Lun Lee
Opt. Express 23(7) A371-A381 (2015)

Vertical InGaN light-emitting diode with a retained patterned sapphire layer

Y.C. Yang, Jinn-Kong Sheu, Ming-Lun Lee, C. H. Yen, Wei-Chih Lai, Schang Jing Hon, and Tsun Kai Ko
Opt. Express 20(S6) A1019-A1025 (2012)

References

  • View by:
  • |
  • |
  • |

  1. T. I. Kim, Y. H. Jung, J. Song, D. Kim, Y. Li, H. S. Kim, I. S. Song, J. J. Wierer, H. A. Pao, Y. Huang, and J. A. Rogers, “High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates,” Small 8(11), 1643–1649 (2012).
    [Crossref] [PubMed]
  2. S. I. Park, Y. Xiong, R. H. Kim, P. Elvikis, M. Meitl, D. H. Kim, J. Wu, J. Yoon, C. J. Yu, Z. Liu, Y. Huang, K. C. Hwang, P. Ferreira, X. Li, K. Choquette, and J. A. Rogers, “Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays,” Science 325(5943), 977–981 (2009).
    [Crossref] [PubMed]
  3. H. S. Kim, E. Brueckner, J. Song, Y. Li, S. Kim, C. Lu, J. Sulkin, K. Choquette, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting,” Proc. Natl. Acad. Sci. U.S.A. 108(25), 10072–10077 (2011).
    [Crossref] [PubMed]
  4. J.-W. Jeong, J. G. McCall, G. Shin, Y. Zhang, R. Al-Hasani, M. Kim, S. Li, J. Y. Sim, K.-I. Jang, Y. Shi, D. Y. Hong, Y. Liu, G. P. Schmitz, L. Xia, Z. He, P. Gamble, W. Z. Ray, Y. Huang, M. R. Bruchas, and J. A. Rogers, “Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics,” Cell 162(3), 662–674 (2015).
    [Crossref] [PubMed]
  5. Y. C. Chiang, C. C. Lin, and H. C. Kuo, “Novel thin-GaN LED structure adopted micro abraded surface to compare with conventional vertical LEDs in ultraviolet light,” Nanoscale Res. Lett. 10(1), 182 (2015).
    [Crossref] [PubMed]
  6. B. Hahn, B. Galler, and K. Engl, “Development of high-efficiency and high-power vertical light emitting diodes,” Jpn. J. Appl. Phys. 53(10), 100208 (2014).
    [Crossref]
  7. C. Goßler, C. Bierbrauer, R. Moser, M. Kunzer, K. Holc, W. Pletschen, K. Köhler, J. Wagner, M. Schwaerzle, P. Ruther, O. Paul, J. Neef, D. Keppeler, G. Hoch, T. Moser, and U. T. Schwarz, “GaN-based micro-LED arrays on flexible substrates for optical cochlear implants,” J. Phys. D Appl. Phys. 47(20), 205401 (2014).
  8. J. J. D. McKendry, D. Massoubre, S. Zhang, B. R. Rae, R. P. Green, E. Gu, R. K. Henderson, A. E. Kelly, and M. D. Dawson, “Visible light communications using a CMOS-controlled micro-light-emitting diode array,” J. Lightwave Technol. 30(1), 61–67 (2012).
    [Crossref]
  9. Z. Gong, S. Jin, Y. Chen, J. McKendry, D. Massoubre, I. M. Watson, E. Gu, and M. D. Dawson, “Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes,” J. Appl. Phys. 107(1), 013103 (2010).
    [Crossref]
  10. P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
    [Crossref]
  11. A. J. Trindade, B. Guilhabert, E. Y. Xie, R. Ferreira, J. J. D. McKendry, D. Zhu, N. Laurand, E. Gu, D. J. Wallis, I. M. Watson, C. J. Humphreys, and M. D. Dawson, “Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing,” Opt. Express 23(7), 9329–9338 (2015).
    [Crossref] [PubMed]
  12. P. Tian, Z. Chen, Y. Sun, S. Qi, H. Zhang, J. Deng, F. Yu, T. Yu, X. Kang, Z. Qin, and G. Zhang, “Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs,” Mater. Sci. Eng. B 175(3), 213–216 (2010).
    [Crossref]
  13. Y. Sun, T. Yu, H. Zhao, X. Shan, X. Zhang, Z. Chen, X. Kang, D. Yu, and G. Zhang, “Microanalyses of the reverse-bias leakage current increase in the laser lift off GaN-based light emitting diodes,” J. Appl. Phys. 106(1), 013101 (2009).
    [Crossref]
  14. P. Tian, E. Xie, Z. Gong, Z. Chen, T. Yu, Y. Sun, S. Qi, Y. Chen, Y. Zhang, S. Calvez, E. Gu, G. Zhang, and M. D. Dawson, “Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate,” in Proceedings of IEEE Photonics Conference (IEEE, 2011), pp. 551–552.
    [Crossref]
  15. APSYS by Crosslight Software, Inc., Burnaby, Canada, http://www.crosslight.com .
  16. J.-R. Chen, Y.-C. Wu, S.-C. Ling, T.-S. Ko, T.-C. Lu, H.-C. Kuo, Y.-K. Kuo, and S.-C. Wang, “Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes,” Appl. Phys. B 98(4), 779–789 (2010).
    [Crossref]
  17. J. Piprek and S. Nakamura, “Physics of high-power InGaN/GaN lasers,” IEEE Proc. Optoelectron. 149(4), 145–151 (2002).
    [Crossref]
  18. G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
    [Crossref]
  19. S.-I. Park, A.-P. Le, J. Wu, Y. Huang, X. Li, and J. A. Rogers, “Light emission characteristics and mechanics of foldable inorganic light-emitting diodes,” Adv. Mater. 22(28), 3062–3066 (2010).
    [Crossref] [PubMed]
  20. P. Tian, J. J. D. McKendry, J. Herrnsdorf, S. Watson, R. Ferreira, I. M. Watson, E. Gu, A. E. Kelly, and M. D. Dawson, “Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes,” Appl. Phys. Lett. 105(17), 171107 (2014).
    [Crossref]
  21. W. Yang, S. Zhang, J. J. D. McKendry, J. Herrnsdorf, P. Tian, Z. Gong, Q. Ji, I. M. Watson, E. Gu, M. D. Dawson, L. Feng, C. Wang, and X. Hu, “Size-dependent capacitance study on InGaN-based micro-light-emitting diodes,” J. Appl. Phys. 116(4), 044512 (2014).
    [Crossref]

2015 (3)

J.-W. Jeong, J. G. McCall, G. Shin, Y. Zhang, R. Al-Hasani, M. Kim, S. Li, J. Y. Sim, K.-I. Jang, Y. Shi, D. Y. Hong, Y. Liu, G. P. Schmitz, L. Xia, Z. He, P. Gamble, W. Z. Ray, Y. Huang, M. R. Bruchas, and J. A. Rogers, “Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics,” Cell 162(3), 662–674 (2015).
[Crossref] [PubMed]

Y. C. Chiang, C. C. Lin, and H. C. Kuo, “Novel thin-GaN LED structure adopted micro abraded surface to compare with conventional vertical LEDs in ultraviolet light,” Nanoscale Res. Lett. 10(1), 182 (2015).
[Crossref] [PubMed]

A. J. Trindade, B. Guilhabert, E. Y. Xie, R. Ferreira, J. J. D. McKendry, D. Zhu, N. Laurand, E. Gu, D. J. Wallis, I. M. Watson, C. J. Humphreys, and M. D. Dawson, “Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing,” Opt. Express 23(7), 9329–9338 (2015).
[Crossref] [PubMed]

2014 (5)

P. Tian, J. J. D. McKendry, J. Herrnsdorf, S. Watson, R. Ferreira, I. M. Watson, E. Gu, A. E. Kelly, and M. D. Dawson, “Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes,” Appl. Phys. Lett. 105(17), 171107 (2014).
[Crossref]

W. Yang, S. Zhang, J. J. D. McKendry, J. Herrnsdorf, P. Tian, Z. Gong, Q. Ji, I. M. Watson, E. Gu, M. D. Dawson, L. Feng, C. Wang, and X. Hu, “Size-dependent capacitance study on InGaN-based micro-light-emitting diodes,” J. Appl. Phys. 116(4), 044512 (2014).
[Crossref]

B. Hahn, B. Galler, and K. Engl, “Development of high-efficiency and high-power vertical light emitting diodes,” Jpn. J. Appl. Phys. 53(10), 100208 (2014).
[Crossref]

C. Goßler, C. Bierbrauer, R. Moser, M. Kunzer, K. Holc, W. Pletschen, K. Köhler, J. Wagner, M. Schwaerzle, P. Ruther, O. Paul, J. Neef, D. Keppeler, G. Hoch, T. Moser, and U. T. Schwarz, “GaN-based micro-LED arrays on flexible substrates for optical cochlear implants,” J. Phys. D Appl. Phys. 47(20), 205401 (2014).

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

2013 (1)

G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
[Crossref]

2012 (2)

T. I. Kim, Y. H. Jung, J. Song, D. Kim, Y. Li, H. S. Kim, I. S. Song, J. J. Wierer, H. A. Pao, Y. Huang, and J. A. Rogers, “High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates,” Small 8(11), 1643–1649 (2012).
[Crossref] [PubMed]

J. J. D. McKendry, D. Massoubre, S. Zhang, B. R. Rae, R. P. Green, E. Gu, R. K. Henderson, A. E. Kelly, and M. D. Dawson, “Visible light communications using a CMOS-controlled micro-light-emitting diode array,” J. Lightwave Technol. 30(1), 61–67 (2012).
[Crossref]

2011 (1)

H. S. Kim, E. Brueckner, J. Song, Y. Li, S. Kim, C. Lu, J. Sulkin, K. Choquette, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting,” Proc. Natl. Acad. Sci. U.S.A. 108(25), 10072–10077 (2011).
[Crossref] [PubMed]

2010 (4)

Z. Gong, S. Jin, Y. Chen, J. McKendry, D. Massoubre, I. M. Watson, E. Gu, and M. D. Dawson, “Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes,” J. Appl. Phys. 107(1), 013103 (2010).
[Crossref]

S.-I. Park, A.-P. Le, J. Wu, Y. Huang, X. Li, and J. A. Rogers, “Light emission characteristics and mechanics of foldable inorganic light-emitting diodes,” Adv. Mater. 22(28), 3062–3066 (2010).
[Crossref] [PubMed]

P. Tian, Z. Chen, Y. Sun, S. Qi, H. Zhang, J. Deng, F. Yu, T. Yu, X. Kang, Z. Qin, and G. Zhang, “Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs,” Mater. Sci. Eng. B 175(3), 213–216 (2010).
[Crossref]

J.-R. Chen, Y.-C. Wu, S.-C. Ling, T.-S. Ko, T.-C. Lu, H.-C. Kuo, Y.-K. Kuo, and S.-C. Wang, “Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes,” Appl. Phys. B 98(4), 779–789 (2010).
[Crossref]

2009 (2)

Y. Sun, T. Yu, H. Zhao, X. Shan, X. Zhang, Z. Chen, X. Kang, D. Yu, and G. Zhang, “Microanalyses of the reverse-bias leakage current increase in the laser lift off GaN-based light emitting diodes,” J. Appl. Phys. 106(1), 013101 (2009).
[Crossref]

S. I. Park, Y. Xiong, R. H. Kim, P. Elvikis, M. Meitl, D. H. Kim, J. Wu, J. Yoon, C. J. Yu, Z. Liu, Y. Huang, K. C. Hwang, P. Ferreira, X. Li, K. Choquette, and J. A. Rogers, “Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays,” Science 325(5943), 977–981 (2009).
[Crossref] [PubMed]

Al-Hasani, R.

J.-W. Jeong, J. G. McCall, G. Shin, Y. Zhang, R. Al-Hasani, M. Kim, S. Li, J. Y. Sim, K.-I. Jang, Y. Shi, D. Y. Hong, Y. Liu, G. P. Schmitz, L. Xia, Z. He, P. Gamble, W. Z. Ray, Y. Huang, M. R. Bruchas, and J. A. Rogers, “Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics,” Cell 162(3), 662–674 (2015).
[Crossref] [PubMed]

Bertazzi, F.

G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
[Crossref]

Bierbrauer, C.

C. Goßler, C. Bierbrauer, R. Moser, M. Kunzer, K. Holc, W. Pletschen, K. Köhler, J. Wagner, M. Schwaerzle, P. Ruther, O. Paul, J. Neef, D. Keppeler, G. Hoch, T. Moser, and U. T. Schwarz, “GaN-based micro-LED arrays on flexible substrates for optical cochlear implants,” J. Phys. D Appl. Phys. 47(20), 205401 (2014).

Bruchas, M. R.

J.-W. Jeong, J. G. McCall, G. Shin, Y. Zhang, R. Al-Hasani, M. Kim, S. Li, J. Y. Sim, K.-I. Jang, Y. Shi, D. Y. Hong, Y. Liu, G. P. Schmitz, L. Xia, Z. He, P. Gamble, W. Z. Ray, Y. Huang, M. R. Bruchas, and J. A. Rogers, “Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics,” Cell 162(3), 662–674 (2015).
[Crossref] [PubMed]

Brueckner, E.

H. S. Kim, E. Brueckner, J. Song, Y. Li, S. Kim, C. Lu, J. Sulkin, K. Choquette, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting,” Proc. Natl. Acad. Sci. U.S.A. 108(25), 10072–10077 (2011).
[Crossref] [PubMed]

Calvez, S.

P. Tian, E. Xie, Z. Gong, Z. Chen, T. Yu, Y. Sun, S. Qi, Y. Chen, Y. Zhang, S. Calvez, E. Gu, G. Zhang, and M. D. Dawson, “Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate,” in Proceedings of IEEE Photonics Conference (IEEE, 2011), pp. 551–552.
[Crossref]

Chen, J.-R.

J.-R. Chen, Y.-C. Wu, S.-C. Ling, T.-S. Ko, T.-C. Lu, H.-C. Kuo, Y.-K. Kuo, and S.-C. Wang, “Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes,” Appl. Phys. B 98(4), 779–789 (2010).
[Crossref]

Chen, Y.

Z. Gong, S. Jin, Y. Chen, J. McKendry, D. Massoubre, I. M. Watson, E. Gu, and M. D. Dawson, “Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes,” J. Appl. Phys. 107(1), 013103 (2010).
[Crossref]

P. Tian, E. Xie, Z. Gong, Z. Chen, T. Yu, Y. Sun, S. Qi, Y. Chen, Y. Zhang, S. Calvez, E. Gu, G. Zhang, and M. D. Dawson, “Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate,” in Proceedings of IEEE Photonics Conference (IEEE, 2011), pp. 551–552.
[Crossref]

Chen, Z.

P. Tian, Z. Chen, Y. Sun, S. Qi, H. Zhang, J. Deng, F. Yu, T. Yu, X. Kang, Z. Qin, and G. Zhang, “Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs,” Mater. Sci. Eng. B 175(3), 213–216 (2010).
[Crossref]

Y. Sun, T. Yu, H. Zhao, X. Shan, X. Zhang, Z. Chen, X. Kang, D. Yu, and G. Zhang, “Microanalyses of the reverse-bias leakage current increase in the laser lift off GaN-based light emitting diodes,” J. Appl. Phys. 106(1), 013101 (2009).
[Crossref]

P. Tian, E. Xie, Z. Gong, Z. Chen, T. Yu, Y. Sun, S. Qi, Y. Chen, Y. Zhang, S. Calvez, E. Gu, G. Zhang, and M. D. Dawson, “Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate,” in Proceedings of IEEE Photonics Conference (IEEE, 2011), pp. 551–552.
[Crossref]

Chiang, Y. C.

Y. C. Chiang, C. C. Lin, and H. C. Kuo, “Novel thin-GaN LED structure adopted micro abraded surface to compare with conventional vertical LEDs in ultraviolet light,” Nanoscale Res. Lett. 10(1), 182 (2015).
[Crossref] [PubMed]

Choquette, K.

H. S. Kim, E. Brueckner, J. Song, Y. Li, S. Kim, C. Lu, J. Sulkin, K. Choquette, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting,” Proc. Natl. Acad. Sci. U.S.A. 108(25), 10072–10077 (2011).
[Crossref] [PubMed]

S. I. Park, Y. Xiong, R. H. Kim, P. Elvikis, M. Meitl, D. H. Kim, J. Wu, J. Yoon, C. J. Yu, Z. Liu, Y. Huang, K. C. Hwang, P. Ferreira, X. Li, K. Choquette, and J. A. Rogers, “Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays,” Science 325(5943), 977–981 (2009).
[Crossref] [PubMed]

Dawson, M. D.

A. J. Trindade, B. Guilhabert, E. Y. Xie, R. Ferreira, J. J. D. McKendry, D. Zhu, N. Laurand, E. Gu, D. J. Wallis, I. M. Watson, C. J. Humphreys, and M. D. Dawson, “Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing,” Opt. Express 23(7), 9329–9338 (2015).
[Crossref] [PubMed]

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

P. Tian, J. J. D. McKendry, J. Herrnsdorf, S. Watson, R. Ferreira, I. M. Watson, E. Gu, A. E. Kelly, and M. D. Dawson, “Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes,” Appl. Phys. Lett. 105(17), 171107 (2014).
[Crossref]

W. Yang, S. Zhang, J. J. D. McKendry, J. Herrnsdorf, P. Tian, Z. Gong, Q. Ji, I. M. Watson, E. Gu, M. D. Dawson, L. Feng, C. Wang, and X. Hu, “Size-dependent capacitance study on InGaN-based micro-light-emitting diodes,” J. Appl. Phys. 116(4), 044512 (2014).
[Crossref]

J. J. D. McKendry, D. Massoubre, S. Zhang, B. R. Rae, R. P. Green, E. Gu, R. K. Henderson, A. E. Kelly, and M. D. Dawson, “Visible light communications using a CMOS-controlled micro-light-emitting diode array,” J. Lightwave Technol. 30(1), 61–67 (2012).
[Crossref]

Z. Gong, S. Jin, Y. Chen, J. McKendry, D. Massoubre, I. M. Watson, E. Gu, and M. D. Dawson, “Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes,” J. Appl. Phys. 107(1), 013103 (2010).
[Crossref]

P. Tian, E. Xie, Z. Gong, Z. Chen, T. Yu, Y. Sun, S. Qi, Y. Chen, Y. Zhang, S. Calvez, E. Gu, G. Zhang, and M. D. Dawson, “Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate,” in Proceedings of IEEE Photonics Conference (IEEE, 2011), pp. 551–552.
[Crossref]

Deng, J.

P. Tian, Z. Chen, Y. Sun, S. Qi, H. Zhang, J. Deng, F. Yu, T. Yu, X. Kang, Z. Qin, and G. Zhang, “Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs,” Mater. Sci. Eng. B 175(3), 213–216 (2010).
[Crossref]

Elvikis, P.

S. I. Park, Y. Xiong, R. H. Kim, P. Elvikis, M. Meitl, D. H. Kim, J. Wu, J. Yoon, C. J. Yu, Z. Liu, Y. Huang, K. C. Hwang, P. Ferreira, X. Li, K. Choquette, and J. A. Rogers, “Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays,” Science 325(5943), 977–981 (2009).
[Crossref] [PubMed]

Engl, K.

B. Hahn, B. Galler, and K. Engl, “Development of high-efficiency and high-power vertical light emitting diodes,” Jpn. J. Appl. Phys. 53(10), 100208 (2014).
[Crossref]

Feng, L.

W. Yang, S. Zhang, J. J. D. McKendry, J. Herrnsdorf, P. Tian, Z. Gong, Q. Ji, I. M. Watson, E. Gu, M. D. Dawson, L. Feng, C. Wang, and X. Hu, “Size-dependent capacitance study on InGaN-based micro-light-emitting diodes,” J. Appl. Phys. 116(4), 044512 (2014).
[Crossref]

Ferreira, P.

S. I. Park, Y. Xiong, R. H. Kim, P. Elvikis, M. Meitl, D. H. Kim, J. Wu, J. Yoon, C. J. Yu, Z. Liu, Y. Huang, K. C. Hwang, P. Ferreira, X. Li, K. Choquette, and J. A. Rogers, “Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays,” Science 325(5943), 977–981 (2009).
[Crossref] [PubMed]

Ferreira, R.

A. J. Trindade, B. Guilhabert, E. Y. Xie, R. Ferreira, J. J. D. McKendry, D. Zhu, N. Laurand, E. Gu, D. J. Wallis, I. M. Watson, C. J. Humphreys, and M. D. Dawson, “Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing,” Opt. Express 23(7), 9329–9338 (2015).
[Crossref] [PubMed]

P. Tian, J. J. D. McKendry, J. Herrnsdorf, S. Watson, R. Ferreira, I. M. Watson, E. Gu, A. E. Kelly, and M. D. Dawson, “Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes,” Appl. Phys. Lett. 105(17), 171107 (2014).
[Crossref]

Galler, B.

B. Hahn, B. Galler, and K. Engl, “Development of high-efficiency and high-power vertical light emitting diodes,” Jpn. J. Appl. Phys. 53(10), 100208 (2014).
[Crossref]

Gamble, P.

J.-W. Jeong, J. G. McCall, G. Shin, Y. Zhang, R. Al-Hasani, M. Kim, S. Li, J. Y. Sim, K.-I. Jang, Y. Shi, D. Y. Hong, Y. Liu, G. P. Schmitz, L. Xia, Z. He, P. Gamble, W. Z. Ray, Y. Huang, M. R. Bruchas, and J. A. Rogers, “Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics,” Cell 162(3), 662–674 (2015).
[Crossref] [PubMed]

Goano, M.

G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
[Crossref]

Gong, Z.

W. Yang, S. Zhang, J. J. D. McKendry, J. Herrnsdorf, P. Tian, Z. Gong, Q. Ji, I. M. Watson, E. Gu, M. D. Dawson, L. Feng, C. Wang, and X. Hu, “Size-dependent capacitance study on InGaN-based micro-light-emitting diodes,” J. Appl. Phys. 116(4), 044512 (2014).
[Crossref]

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

Z. Gong, S. Jin, Y. Chen, J. McKendry, D. Massoubre, I. M. Watson, E. Gu, and M. D. Dawson, “Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes,” J. Appl. Phys. 107(1), 013103 (2010).
[Crossref]

P. Tian, E. Xie, Z. Gong, Z. Chen, T. Yu, Y. Sun, S. Qi, Y. Chen, Y. Zhang, S. Calvez, E. Gu, G. Zhang, and M. D. Dawson, “Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate,” in Proceedings of IEEE Photonics Conference (IEEE, 2011), pp. 551–552.
[Crossref]

Goßler, C.

C. Goßler, C. Bierbrauer, R. Moser, M. Kunzer, K. Holc, W. Pletschen, K. Köhler, J. Wagner, M. Schwaerzle, P. Ruther, O. Paul, J. Neef, D. Keppeler, G. Hoch, T. Moser, and U. T. Schwarz, “GaN-based micro-LED arrays on flexible substrates for optical cochlear implants,” J. Phys. D Appl. Phys. 47(20), 205401 (2014).

Green, R. P.

Gu, E.

A. J. Trindade, B. Guilhabert, E. Y. Xie, R. Ferreira, J. J. D. McKendry, D. Zhu, N. Laurand, E. Gu, D. J. Wallis, I. M. Watson, C. J. Humphreys, and M. D. Dawson, “Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing,” Opt. Express 23(7), 9329–9338 (2015).
[Crossref] [PubMed]

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

W. Yang, S. Zhang, J. J. D. McKendry, J. Herrnsdorf, P. Tian, Z. Gong, Q. Ji, I. M. Watson, E. Gu, M. D. Dawson, L. Feng, C. Wang, and X. Hu, “Size-dependent capacitance study on InGaN-based micro-light-emitting diodes,” J. Appl. Phys. 116(4), 044512 (2014).
[Crossref]

P. Tian, J. J. D. McKendry, J. Herrnsdorf, S. Watson, R. Ferreira, I. M. Watson, E. Gu, A. E. Kelly, and M. D. Dawson, “Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes,” Appl. Phys. Lett. 105(17), 171107 (2014).
[Crossref]

J. J. D. McKendry, D. Massoubre, S. Zhang, B. R. Rae, R. P. Green, E. Gu, R. K. Henderson, A. E. Kelly, and M. D. Dawson, “Visible light communications using a CMOS-controlled micro-light-emitting diode array,” J. Lightwave Technol. 30(1), 61–67 (2012).
[Crossref]

Z. Gong, S. Jin, Y. Chen, J. McKendry, D. Massoubre, I. M. Watson, E. Gu, and M. D. Dawson, “Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes,” J. Appl. Phys. 107(1), 013103 (2010).
[Crossref]

P. Tian, E. Xie, Z. Gong, Z. Chen, T. Yu, Y. Sun, S. Qi, Y. Chen, Y. Zhang, S. Calvez, E. Gu, G. Zhang, and M. D. Dawson, “Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate,” in Proceedings of IEEE Photonics Conference (IEEE, 2011), pp. 551–552.
[Crossref]

Guilhabert, B.

Hahn, B.

B. Hahn, B. Galler, and K. Engl, “Development of high-efficiency and high-power vertical light emitting diodes,” Jpn. J. Appl. Phys. 53(10), 100208 (2014).
[Crossref]

He, Z.

J.-W. Jeong, J. G. McCall, G. Shin, Y. Zhang, R. Al-Hasani, M. Kim, S. Li, J. Y. Sim, K.-I. Jang, Y. Shi, D. Y. Hong, Y. Liu, G. P. Schmitz, L. Xia, Z. He, P. Gamble, W. Z. Ray, Y. Huang, M. R. Bruchas, and J. A. Rogers, “Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics,” Cell 162(3), 662–674 (2015).
[Crossref] [PubMed]

Henderson, R. K.

Herrnsdorf, J.

P. Tian, J. J. D. McKendry, J. Herrnsdorf, S. Watson, R. Ferreira, I. M. Watson, E. Gu, A. E. Kelly, and M. D. Dawson, “Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes,” Appl. Phys. Lett. 105(17), 171107 (2014).
[Crossref]

W. Yang, S. Zhang, J. J. D. McKendry, J. Herrnsdorf, P. Tian, Z. Gong, Q. Ji, I. M. Watson, E. Gu, M. D. Dawson, L. Feng, C. Wang, and X. Hu, “Size-dependent capacitance study on InGaN-based micro-light-emitting diodes,” J. Appl. Phys. 116(4), 044512 (2014).
[Crossref]

Hoch, G.

C. Goßler, C. Bierbrauer, R. Moser, M. Kunzer, K. Holc, W. Pletschen, K. Köhler, J. Wagner, M. Schwaerzle, P. Ruther, O. Paul, J. Neef, D. Keppeler, G. Hoch, T. Moser, and U. T. Schwarz, “GaN-based micro-LED arrays on flexible substrates for optical cochlear implants,” J. Phys. D Appl. Phys. 47(20), 205401 (2014).

Holc, K.

C. Goßler, C. Bierbrauer, R. Moser, M. Kunzer, K. Holc, W. Pletschen, K. Köhler, J. Wagner, M. Schwaerzle, P. Ruther, O. Paul, J. Neef, D. Keppeler, G. Hoch, T. Moser, and U. T. Schwarz, “GaN-based micro-LED arrays on flexible substrates for optical cochlear implants,” J. Phys. D Appl. Phys. 47(20), 205401 (2014).

Hong, D. Y.

J.-W. Jeong, J. G. McCall, G. Shin, Y. Zhang, R. Al-Hasani, M. Kim, S. Li, J. Y. Sim, K.-I. Jang, Y. Shi, D. Y. Hong, Y. Liu, G. P. Schmitz, L. Xia, Z. He, P. Gamble, W. Z. Ray, Y. Huang, M. R. Bruchas, and J. A. Rogers, “Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics,” Cell 162(3), 662–674 (2015).
[Crossref] [PubMed]

Hu, X.

W. Yang, S. Zhang, J. J. D. McKendry, J. Herrnsdorf, P. Tian, Z. Gong, Q. Ji, I. M. Watson, E. Gu, M. D. Dawson, L. Feng, C. Wang, and X. Hu, “Size-dependent capacitance study on InGaN-based micro-light-emitting diodes,” J. Appl. Phys. 116(4), 044512 (2014).
[Crossref]

Huang, Y.

J.-W. Jeong, J. G. McCall, G. Shin, Y. Zhang, R. Al-Hasani, M. Kim, S. Li, J. Y. Sim, K.-I. Jang, Y. Shi, D. Y. Hong, Y. Liu, G. P. Schmitz, L. Xia, Z. He, P. Gamble, W. Z. Ray, Y. Huang, M. R. Bruchas, and J. A. Rogers, “Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics,” Cell 162(3), 662–674 (2015).
[Crossref] [PubMed]

T. I. Kim, Y. H. Jung, J. Song, D. Kim, Y. Li, H. S. Kim, I. S. Song, J. J. Wierer, H. A. Pao, Y. Huang, and J. A. Rogers, “High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates,” Small 8(11), 1643–1649 (2012).
[Crossref] [PubMed]

H. S. Kim, E. Brueckner, J. Song, Y. Li, S. Kim, C. Lu, J. Sulkin, K. Choquette, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting,” Proc. Natl. Acad. Sci. U.S.A. 108(25), 10072–10077 (2011).
[Crossref] [PubMed]

S.-I. Park, A.-P. Le, J. Wu, Y. Huang, X. Li, and J. A. Rogers, “Light emission characteristics and mechanics of foldable inorganic light-emitting diodes,” Adv. Mater. 22(28), 3062–3066 (2010).
[Crossref] [PubMed]

S. I. Park, Y. Xiong, R. H. Kim, P. Elvikis, M. Meitl, D. H. Kim, J. Wu, J. Yoon, C. J. Yu, Z. Liu, Y. Huang, K. C. Hwang, P. Ferreira, X. Li, K. Choquette, and J. A. Rogers, “Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays,” Science 325(5943), 977–981 (2009).
[Crossref] [PubMed]

Humphreys, C. J.

A. J. Trindade, B. Guilhabert, E. Y. Xie, R. Ferreira, J. J. D. McKendry, D. Zhu, N. Laurand, E. Gu, D. J. Wallis, I. M. Watson, C. J. Humphreys, and M. D. Dawson, “Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing,” Opt. Express 23(7), 9329–9338 (2015).
[Crossref] [PubMed]

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

Hwang, K. C.

S. I. Park, Y. Xiong, R. H. Kim, P. Elvikis, M. Meitl, D. H. Kim, J. Wu, J. Yoon, C. J. Yu, Z. Liu, Y. Huang, K. C. Hwang, P. Ferreira, X. Li, K. Choquette, and J. A. Rogers, “Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays,” Science 325(5943), 977–981 (2009).
[Crossref] [PubMed]

Jang, K.-I.

J.-W. Jeong, J. G. McCall, G. Shin, Y. Zhang, R. Al-Hasani, M. Kim, S. Li, J. Y. Sim, K.-I. Jang, Y. Shi, D. Y. Hong, Y. Liu, G. P. Schmitz, L. Xia, Z. He, P. Gamble, W. Z. Ray, Y. Huang, M. R. Bruchas, and J. A. Rogers, “Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics,” Cell 162(3), 662–674 (2015).
[Crossref] [PubMed]

Jeong, J.-W.

J.-W. Jeong, J. G. McCall, G. Shin, Y. Zhang, R. Al-Hasani, M. Kim, S. Li, J. Y. Sim, K.-I. Jang, Y. Shi, D. Y. Hong, Y. Liu, G. P. Schmitz, L. Xia, Z. He, P. Gamble, W. Z. Ray, Y. Huang, M. R. Bruchas, and J. A. Rogers, “Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics,” Cell 162(3), 662–674 (2015).
[Crossref] [PubMed]

Ji, Q.

W. Yang, S. Zhang, J. J. D. McKendry, J. Herrnsdorf, P. Tian, Z. Gong, Q. Ji, I. M. Watson, E. Gu, M. D. Dawson, L. Feng, C. Wang, and X. Hu, “Size-dependent capacitance study on InGaN-based micro-light-emitting diodes,” J. Appl. Phys. 116(4), 044512 (2014).
[Crossref]

Jin, S.

Z. Gong, S. Jin, Y. Chen, J. McKendry, D. Massoubre, I. M. Watson, E. Gu, and M. D. Dawson, “Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes,” J. Appl. Phys. 107(1), 013103 (2010).
[Crossref]

Jung, Y. H.

T. I. Kim, Y. H. Jung, J. Song, D. Kim, Y. Li, H. S. Kim, I. S. Song, J. J. Wierer, H. A. Pao, Y. Huang, and J. A. Rogers, “High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates,” Small 8(11), 1643–1649 (2012).
[Crossref] [PubMed]

Kang, X.

P. Tian, Z. Chen, Y. Sun, S. Qi, H. Zhang, J. Deng, F. Yu, T. Yu, X. Kang, Z. Qin, and G. Zhang, “Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs,” Mater. Sci. Eng. B 175(3), 213–216 (2010).
[Crossref]

Y. Sun, T. Yu, H. Zhao, X. Shan, X. Zhang, Z. Chen, X. Kang, D. Yu, and G. Zhang, “Microanalyses of the reverse-bias leakage current increase in the laser lift off GaN-based light emitting diodes,” J. Appl. Phys. 106(1), 013101 (2009).
[Crossref]

Kelly, A. E.

P. Tian, J. J. D. McKendry, J. Herrnsdorf, S. Watson, R. Ferreira, I. M. Watson, E. Gu, A. E. Kelly, and M. D. Dawson, “Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes,” Appl. Phys. Lett. 105(17), 171107 (2014).
[Crossref]

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

J. J. D. McKendry, D. Massoubre, S. Zhang, B. R. Rae, R. P. Green, E. Gu, R. K. Henderson, A. E. Kelly, and M. D. Dawson, “Visible light communications using a CMOS-controlled micro-light-emitting diode array,” J. Lightwave Technol. 30(1), 61–67 (2012).
[Crossref]

Keppeler, D.

C. Goßler, C. Bierbrauer, R. Moser, M. Kunzer, K. Holc, W. Pletschen, K. Köhler, J. Wagner, M. Schwaerzle, P. Ruther, O. Paul, J. Neef, D. Keppeler, G. Hoch, T. Moser, and U. T. Schwarz, “GaN-based micro-LED arrays on flexible substrates for optical cochlear implants,” J. Phys. D Appl. Phys. 47(20), 205401 (2014).

Kim, D.

T. I. Kim, Y. H. Jung, J. Song, D. Kim, Y. Li, H. S. Kim, I. S. Song, J. J. Wierer, H. A. Pao, Y. Huang, and J. A. Rogers, “High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates,” Small 8(11), 1643–1649 (2012).
[Crossref] [PubMed]

Kim, D. H.

S. I. Park, Y. Xiong, R. H. Kim, P. Elvikis, M. Meitl, D. H. Kim, J. Wu, J. Yoon, C. J. Yu, Z. Liu, Y. Huang, K. C. Hwang, P. Ferreira, X. Li, K. Choquette, and J. A. Rogers, “Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays,” Science 325(5943), 977–981 (2009).
[Crossref] [PubMed]

Kim, H. S.

T. I. Kim, Y. H. Jung, J. Song, D. Kim, Y. Li, H. S. Kim, I. S. Song, J. J. Wierer, H. A. Pao, Y. Huang, and J. A. Rogers, “High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates,” Small 8(11), 1643–1649 (2012).
[Crossref] [PubMed]

H. S. Kim, E. Brueckner, J. Song, Y. Li, S. Kim, C. Lu, J. Sulkin, K. Choquette, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting,” Proc. Natl. Acad. Sci. U.S.A. 108(25), 10072–10077 (2011).
[Crossref] [PubMed]

Kim, M.

J.-W. Jeong, J. G. McCall, G. Shin, Y. Zhang, R. Al-Hasani, M. Kim, S. Li, J. Y. Sim, K.-I. Jang, Y. Shi, D. Y. Hong, Y. Liu, G. P. Schmitz, L. Xia, Z. He, P. Gamble, W. Z. Ray, Y. Huang, M. R. Bruchas, and J. A. Rogers, “Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics,” Cell 162(3), 662–674 (2015).
[Crossref] [PubMed]

Kim, R. H.

S. I. Park, Y. Xiong, R. H. Kim, P. Elvikis, M. Meitl, D. H. Kim, J. Wu, J. Yoon, C. J. Yu, Z. Liu, Y. Huang, K. C. Hwang, P. Ferreira, X. Li, K. Choquette, and J. A. Rogers, “Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays,” Science 325(5943), 977–981 (2009).
[Crossref] [PubMed]

Kim, S.

H. S. Kim, E. Brueckner, J. Song, Y. Li, S. Kim, C. Lu, J. Sulkin, K. Choquette, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting,” Proc. Natl. Acad. Sci. U.S.A. 108(25), 10072–10077 (2011).
[Crossref] [PubMed]

Kim, T. I.

T. I. Kim, Y. H. Jung, J. Song, D. Kim, Y. Li, H. S. Kim, I. S. Song, J. J. Wierer, H. A. Pao, Y. Huang, and J. A. Rogers, “High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates,” Small 8(11), 1643–1649 (2012).
[Crossref] [PubMed]

Ko, T.-S.

J.-R. Chen, Y.-C. Wu, S.-C. Ling, T.-S. Ko, T.-C. Lu, H.-C. Kuo, Y.-K. Kuo, and S.-C. Wang, “Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes,” Appl. Phys. B 98(4), 779–789 (2010).
[Crossref]

Köhler, K.

C. Goßler, C. Bierbrauer, R. Moser, M. Kunzer, K. Holc, W. Pletschen, K. Köhler, J. Wagner, M. Schwaerzle, P. Ruther, O. Paul, J. Neef, D. Keppeler, G. Hoch, T. Moser, and U. T. Schwarz, “GaN-based micro-LED arrays on flexible substrates for optical cochlear implants,” J. Phys. D Appl. Phys. 47(20), 205401 (2014).

Kunzer, M.

C. Goßler, C. Bierbrauer, R. Moser, M. Kunzer, K. Holc, W. Pletschen, K. Köhler, J. Wagner, M. Schwaerzle, P. Ruther, O. Paul, J. Neef, D. Keppeler, G. Hoch, T. Moser, and U. T. Schwarz, “GaN-based micro-LED arrays on flexible substrates for optical cochlear implants,” J. Phys. D Appl. Phys. 47(20), 205401 (2014).

Kuo, H. C.

Y. C. Chiang, C. C. Lin, and H. C. Kuo, “Novel thin-GaN LED structure adopted micro abraded surface to compare with conventional vertical LEDs in ultraviolet light,” Nanoscale Res. Lett. 10(1), 182 (2015).
[Crossref] [PubMed]

Kuo, H.-C.

J.-R. Chen, Y.-C. Wu, S.-C. Ling, T.-S. Ko, T.-C. Lu, H.-C. Kuo, Y.-K. Kuo, and S.-C. Wang, “Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes,” Appl. Phys. B 98(4), 779–789 (2010).
[Crossref]

Kuo, Y.-K.

J.-R. Chen, Y.-C. Wu, S.-C. Ling, T.-S. Ko, T.-C. Lu, H.-C. Kuo, Y.-K. Kuo, and S.-C. Wang, “Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes,” Appl. Phys. B 98(4), 779–789 (2010).
[Crossref]

Laurand, N.

Le, A.-P.

S.-I. Park, A.-P. Le, J. Wu, Y. Huang, X. Li, and J. A. Rogers, “Light emission characteristics and mechanics of foldable inorganic light-emitting diodes,” Adv. Mater. 22(28), 3062–3066 (2010).
[Crossref] [PubMed]

Li, S.

J.-W. Jeong, J. G. McCall, G. Shin, Y. Zhang, R. Al-Hasani, M. Kim, S. Li, J. Y. Sim, K.-I. Jang, Y. Shi, D. Y. Hong, Y. Liu, G. P. Schmitz, L. Xia, Z. He, P. Gamble, W. Z. Ray, Y. Huang, M. R. Bruchas, and J. A. Rogers, “Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics,” Cell 162(3), 662–674 (2015).
[Crossref] [PubMed]

Li, X.

S.-I. Park, A.-P. Le, J. Wu, Y. Huang, X. Li, and J. A. Rogers, “Light emission characteristics and mechanics of foldable inorganic light-emitting diodes,” Adv. Mater. 22(28), 3062–3066 (2010).
[Crossref] [PubMed]

S. I. Park, Y. Xiong, R. H. Kim, P. Elvikis, M. Meitl, D. H. Kim, J. Wu, J. Yoon, C. J. Yu, Z. Liu, Y. Huang, K. C. Hwang, P. Ferreira, X. Li, K. Choquette, and J. A. Rogers, “Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays,” Science 325(5943), 977–981 (2009).
[Crossref] [PubMed]

Li, Y.

T. I. Kim, Y. H. Jung, J. Song, D. Kim, Y. Li, H. S. Kim, I. S. Song, J. J. Wierer, H. A. Pao, Y. Huang, and J. A. Rogers, “High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates,” Small 8(11), 1643–1649 (2012).
[Crossref] [PubMed]

H. S. Kim, E. Brueckner, J. Song, Y. Li, S. Kim, C. Lu, J. Sulkin, K. Choquette, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting,” Proc. Natl. Acad. Sci. U.S.A. 108(25), 10072–10077 (2011).
[Crossref] [PubMed]

Lin, C. C.

Y. C. Chiang, C. C. Lin, and H. C. Kuo, “Novel thin-GaN LED structure adopted micro abraded surface to compare with conventional vertical LEDs in ultraviolet light,” Nanoscale Res. Lett. 10(1), 182 (2015).
[Crossref] [PubMed]

Ling, S.-C.

J.-R. Chen, Y.-C. Wu, S.-C. Ling, T.-S. Ko, T.-C. Lu, H.-C. Kuo, Y.-K. Kuo, and S.-C. Wang, “Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes,” Appl. Phys. B 98(4), 779–789 (2010).
[Crossref]

Liu, Y.

J.-W. Jeong, J. G. McCall, G. Shin, Y. Zhang, R. Al-Hasani, M. Kim, S. Li, J. Y. Sim, K.-I. Jang, Y. Shi, D. Y. Hong, Y. Liu, G. P. Schmitz, L. Xia, Z. He, P. Gamble, W. Z. Ray, Y. Huang, M. R. Bruchas, and J. A. Rogers, “Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics,” Cell 162(3), 662–674 (2015).
[Crossref] [PubMed]

Liu, Z.

S. I. Park, Y. Xiong, R. H. Kim, P. Elvikis, M. Meitl, D. H. Kim, J. Wu, J. Yoon, C. J. Yu, Z. Liu, Y. Huang, K. C. Hwang, P. Ferreira, X. Li, K. Choquette, and J. A. Rogers, “Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays,” Science 325(5943), 977–981 (2009).
[Crossref] [PubMed]

Lu, C.

H. S. Kim, E. Brueckner, J. Song, Y. Li, S. Kim, C. Lu, J. Sulkin, K. Choquette, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting,” Proc. Natl. Acad. Sci. U.S.A. 108(25), 10072–10077 (2011).
[Crossref] [PubMed]

Lu, T.-C.

J.-R. Chen, Y.-C. Wu, S.-C. Ling, T.-S. Ko, T.-C. Lu, H.-C. Kuo, Y.-K. Kuo, and S.-C. Wang, “Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes,” Appl. Phys. B 98(4), 779–789 (2010).
[Crossref]

Massoubre, D.

J. J. D. McKendry, D. Massoubre, S. Zhang, B. R. Rae, R. P. Green, E. Gu, R. K. Henderson, A. E. Kelly, and M. D. Dawson, “Visible light communications using a CMOS-controlled micro-light-emitting diode array,” J. Lightwave Technol. 30(1), 61–67 (2012).
[Crossref]

Z. Gong, S. Jin, Y. Chen, J. McKendry, D. Massoubre, I. M. Watson, E. Gu, and M. D. Dawson, “Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes,” J. Appl. Phys. 107(1), 013103 (2010).
[Crossref]

McCall, J. G.

J.-W. Jeong, J. G. McCall, G. Shin, Y. Zhang, R. Al-Hasani, M. Kim, S. Li, J. Y. Sim, K.-I. Jang, Y. Shi, D. Y. Hong, Y. Liu, G. P. Schmitz, L. Xia, Z. He, P. Gamble, W. Z. Ray, Y. Huang, M. R. Bruchas, and J. A. Rogers, “Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics,” Cell 162(3), 662–674 (2015).
[Crossref] [PubMed]

McKendry, J.

Z. Gong, S. Jin, Y. Chen, J. McKendry, D. Massoubre, I. M. Watson, E. Gu, and M. D. Dawson, “Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes,” J. Appl. Phys. 107(1), 013103 (2010).
[Crossref]

McKendry, J. J. D.

A. J. Trindade, B. Guilhabert, E. Y. Xie, R. Ferreira, J. J. D. McKendry, D. Zhu, N. Laurand, E. Gu, D. J. Wallis, I. M. Watson, C. J. Humphreys, and M. D. Dawson, “Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing,” Opt. Express 23(7), 9329–9338 (2015).
[Crossref] [PubMed]

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

P. Tian, J. J. D. McKendry, J. Herrnsdorf, S. Watson, R. Ferreira, I. M. Watson, E. Gu, A. E. Kelly, and M. D. Dawson, “Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes,” Appl. Phys. Lett. 105(17), 171107 (2014).
[Crossref]

W. Yang, S. Zhang, J. J. D. McKendry, J. Herrnsdorf, P. Tian, Z. Gong, Q. Ji, I. M. Watson, E. Gu, M. D. Dawson, L. Feng, C. Wang, and X. Hu, “Size-dependent capacitance study on InGaN-based micro-light-emitting diodes,” J. Appl. Phys. 116(4), 044512 (2014).
[Crossref]

J. J. D. McKendry, D. Massoubre, S. Zhang, B. R. Rae, R. P. Green, E. Gu, R. K. Henderson, A. E. Kelly, and M. D. Dawson, “Visible light communications using a CMOS-controlled micro-light-emitting diode array,” J. Lightwave Technol. 30(1), 61–67 (2012).
[Crossref]

Meitl, M.

S. I. Park, Y. Xiong, R. H. Kim, P. Elvikis, M. Meitl, D. H. Kim, J. Wu, J. Yoon, C. J. Yu, Z. Liu, Y. Huang, K. C. Hwang, P. Ferreira, X. Li, K. Choquette, and J. A. Rogers, “Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays,” Science 325(5943), 977–981 (2009).
[Crossref] [PubMed]

Meneghesso, G.

G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
[Crossref]

Meneghini, M.

G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
[Crossref]

Moser, R.

C. Goßler, C. Bierbrauer, R. Moser, M. Kunzer, K. Holc, W. Pletschen, K. Köhler, J. Wagner, M. Schwaerzle, P. Ruther, O. Paul, J. Neef, D. Keppeler, G. Hoch, T. Moser, and U. T. Schwarz, “GaN-based micro-LED arrays on flexible substrates for optical cochlear implants,” J. Phys. D Appl. Phys. 47(20), 205401 (2014).

Moser, T.

C. Goßler, C. Bierbrauer, R. Moser, M. Kunzer, K. Holc, W. Pletschen, K. Köhler, J. Wagner, M. Schwaerzle, P. Ruther, O. Paul, J. Neef, D. Keppeler, G. Hoch, T. Moser, and U. T. Schwarz, “GaN-based micro-LED arrays on flexible substrates for optical cochlear implants,” J. Phys. D Appl. Phys. 47(20), 205401 (2014).

Neef, J.

C. Goßler, C. Bierbrauer, R. Moser, M. Kunzer, K. Holc, W. Pletschen, K. Köhler, J. Wagner, M. Schwaerzle, P. Ruther, O. Paul, J. Neef, D. Keppeler, G. Hoch, T. Moser, and U. T. Schwarz, “GaN-based micro-LED arrays on flexible substrates for optical cochlear implants,” J. Phys. D Appl. Phys. 47(20), 205401 (2014).

Nuzzo, R. G.

H. S. Kim, E. Brueckner, J. Song, Y. Li, S. Kim, C. Lu, J. Sulkin, K. Choquette, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting,” Proc. Natl. Acad. Sci. U.S.A. 108(25), 10072–10077 (2011).
[Crossref] [PubMed]

Pao, H. A.

T. I. Kim, Y. H. Jung, J. Song, D. Kim, Y. Li, H. S. Kim, I. S. Song, J. J. Wierer, H. A. Pao, Y. Huang, and J. A. Rogers, “High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates,” Small 8(11), 1643–1649 (2012).
[Crossref] [PubMed]

Park, S. I.

S. I. Park, Y. Xiong, R. H. Kim, P. Elvikis, M. Meitl, D. H. Kim, J. Wu, J. Yoon, C. J. Yu, Z. Liu, Y. Huang, K. C. Hwang, P. Ferreira, X. Li, K. Choquette, and J. A. Rogers, “Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays,” Science 325(5943), 977–981 (2009).
[Crossref] [PubMed]

Park, S.-I.

S.-I. Park, A.-P. Le, J. Wu, Y. Huang, X. Li, and J. A. Rogers, “Light emission characteristics and mechanics of foldable inorganic light-emitting diodes,” Adv. Mater. 22(28), 3062–3066 (2010).
[Crossref] [PubMed]

Paul, O.

C. Goßler, C. Bierbrauer, R. Moser, M. Kunzer, K. Holc, W. Pletschen, K. Köhler, J. Wagner, M. Schwaerzle, P. Ruther, O. Paul, J. Neef, D. Keppeler, G. Hoch, T. Moser, and U. T. Schwarz, “GaN-based micro-LED arrays on flexible substrates for optical cochlear implants,” J. Phys. D Appl. Phys. 47(20), 205401 (2014).

Pletschen, W.

C. Goßler, C. Bierbrauer, R. Moser, M. Kunzer, K. Holc, W. Pletschen, K. Köhler, J. Wagner, M. Schwaerzle, P. Ruther, O. Paul, J. Neef, D. Keppeler, G. Hoch, T. Moser, and U. T. Schwarz, “GaN-based micro-LED arrays on flexible substrates for optical cochlear implants,” J. Phys. D Appl. Phys. 47(20), 205401 (2014).

Qi, S.

P. Tian, Z. Chen, Y. Sun, S. Qi, H. Zhang, J. Deng, F. Yu, T. Yu, X. Kang, Z. Qin, and G. Zhang, “Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs,” Mater. Sci. Eng. B 175(3), 213–216 (2010).
[Crossref]

P. Tian, E. Xie, Z. Gong, Z. Chen, T. Yu, Y. Sun, S. Qi, Y. Chen, Y. Zhang, S. Calvez, E. Gu, G. Zhang, and M. D. Dawson, “Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate,” in Proceedings of IEEE Photonics Conference (IEEE, 2011), pp. 551–552.
[Crossref]

Qin, Z.

P. Tian, Z. Chen, Y. Sun, S. Qi, H. Zhang, J. Deng, F. Yu, T. Yu, X. Kang, Z. Qin, and G. Zhang, “Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs,” Mater. Sci. Eng. B 175(3), 213–216 (2010).
[Crossref]

Rae, B. R.

Ray, W. Z.

J.-W. Jeong, J. G. McCall, G. Shin, Y. Zhang, R. Al-Hasani, M. Kim, S. Li, J. Y. Sim, K.-I. Jang, Y. Shi, D. Y. Hong, Y. Liu, G. P. Schmitz, L. Xia, Z. He, P. Gamble, W. Z. Ray, Y. Huang, M. R. Bruchas, and J. A. Rogers, “Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics,” Cell 162(3), 662–674 (2015).
[Crossref] [PubMed]

Rogers, J. A.

J.-W. Jeong, J. G. McCall, G. Shin, Y. Zhang, R. Al-Hasani, M. Kim, S. Li, J. Y. Sim, K.-I. Jang, Y. Shi, D. Y. Hong, Y. Liu, G. P. Schmitz, L. Xia, Z. He, P. Gamble, W. Z. Ray, Y. Huang, M. R. Bruchas, and J. A. Rogers, “Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics,” Cell 162(3), 662–674 (2015).
[Crossref] [PubMed]

T. I. Kim, Y. H. Jung, J. Song, D. Kim, Y. Li, H. S. Kim, I. S. Song, J. J. Wierer, H. A. Pao, Y. Huang, and J. A. Rogers, “High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates,” Small 8(11), 1643–1649 (2012).
[Crossref] [PubMed]

H. S. Kim, E. Brueckner, J. Song, Y. Li, S. Kim, C. Lu, J. Sulkin, K. Choquette, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting,” Proc. Natl. Acad. Sci. U.S.A. 108(25), 10072–10077 (2011).
[Crossref] [PubMed]

S.-I. Park, A.-P. Le, J. Wu, Y. Huang, X. Li, and J. A. Rogers, “Light emission characteristics and mechanics of foldable inorganic light-emitting diodes,” Adv. Mater. 22(28), 3062–3066 (2010).
[Crossref] [PubMed]

S. I. Park, Y. Xiong, R. H. Kim, P. Elvikis, M. Meitl, D. H. Kim, J. Wu, J. Yoon, C. J. Yu, Z. Liu, Y. Huang, K. C. Hwang, P. Ferreira, X. Li, K. Choquette, and J. A. Rogers, “Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays,” Science 325(5943), 977–981 (2009).
[Crossref] [PubMed]

Ruther, P.

C. Goßler, C. Bierbrauer, R. Moser, M. Kunzer, K. Holc, W. Pletschen, K. Köhler, J. Wagner, M. Schwaerzle, P. Ruther, O. Paul, J. Neef, D. Keppeler, G. Hoch, T. Moser, and U. T. Schwarz, “GaN-based micro-LED arrays on flexible substrates for optical cochlear implants,” J. Phys. D Appl. Phys. 47(20), 205401 (2014).

Saguatti, D.

G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
[Crossref]

Schmitz, G. P.

J.-W. Jeong, J. G. McCall, G. Shin, Y. Zhang, R. Al-Hasani, M. Kim, S. Li, J. Y. Sim, K.-I. Jang, Y. Shi, D. Y. Hong, Y. Liu, G. P. Schmitz, L. Xia, Z. He, P. Gamble, W. Z. Ray, Y. Huang, M. R. Bruchas, and J. A. Rogers, “Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics,” Cell 162(3), 662–674 (2015).
[Crossref] [PubMed]

Schwaerzle, M.

C. Goßler, C. Bierbrauer, R. Moser, M. Kunzer, K. Holc, W. Pletschen, K. Köhler, J. Wagner, M. Schwaerzle, P. Ruther, O. Paul, J. Neef, D. Keppeler, G. Hoch, T. Moser, and U. T. Schwarz, “GaN-based micro-LED arrays on flexible substrates for optical cochlear implants,” J. Phys. D Appl. Phys. 47(20), 205401 (2014).

Schwarz, U. T.

C. Goßler, C. Bierbrauer, R. Moser, M. Kunzer, K. Holc, W. Pletschen, K. Köhler, J. Wagner, M. Schwaerzle, P. Ruther, O. Paul, J. Neef, D. Keppeler, G. Hoch, T. Moser, and U. T. Schwarz, “GaN-based micro-LED arrays on flexible substrates for optical cochlear implants,” J. Phys. D Appl. Phys. 47(20), 205401 (2014).

Shan, X.

Y. Sun, T. Yu, H. Zhao, X. Shan, X. Zhang, Z. Chen, X. Kang, D. Yu, and G. Zhang, “Microanalyses of the reverse-bias leakage current increase in the laser lift off GaN-based light emitting diodes,” J. Appl. Phys. 106(1), 013101 (2009).
[Crossref]

Shi, Y.

J.-W. Jeong, J. G. McCall, G. Shin, Y. Zhang, R. Al-Hasani, M. Kim, S. Li, J. Y. Sim, K.-I. Jang, Y. Shi, D. Y. Hong, Y. Liu, G. P. Schmitz, L. Xia, Z. He, P. Gamble, W. Z. Ray, Y. Huang, M. R. Bruchas, and J. A. Rogers, “Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics,” Cell 162(3), 662–674 (2015).
[Crossref] [PubMed]

Shin, G.

J.-W. Jeong, J. G. McCall, G. Shin, Y. Zhang, R. Al-Hasani, M. Kim, S. Li, J. Y. Sim, K.-I. Jang, Y. Shi, D. Y. Hong, Y. Liu, G. P. Schmitz, L. Xia, Z. He, P. Gamble, W. Z. Ray, Y. Huang, M. R. Bruchas, and J. A. Rogers, “Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics,” Cell 162(3), 662–674 (2015).
[Crossref] [PubMed]

Sim, J. Y.

J.-W. Jeong, J. G. McCall, G. Shin, Y. Zhang, R. Al-Hasani, M. Kim, S. Li, J. Y. Sim, K.-I. Jang, Y. Shi, D. Y. Hong, Y. Liu, G. P. Schmitz, L. Xia, Z. He, P. Gamble, W. Z. Ray, Y. Huang, M. R. Bruchas, and J. A. Rogers, “Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics,” Cell 162(3), 662–674 (2015).
[Crossref] [PubMed]

Song, I. S.

T. I. Kim, Y. H. Jung, J. Song, D. Kim, Y. Li, H. S. Kim, I. S. Song, J. J. Wierer, H. A. Pao, Y. Huang, and J. A. Rogers, “High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates,” Small 8(11), 1643–1649 (2012).
[Crossref] [PubMed]

Song, J.

T. I. Kim, Y. H. Jung, J. Song, D. Kim, Y. Li, H. S. Kim, I. S. Song, J. J. Wierer, H. A. Pao, Y. Huang, and J. A. Rogers, “High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates,” Small 8(11), 1643–1649 (2012).
[Crossref] [PubMed]

H. S. Kim, E. Brueckner, J. Song, Y. Li, S. Kim, C. Lu, J. Sulkin, K. Choquette, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting,” Proc. Natl. Acad. Sci. U.S.A. 108(25), 10072–10077 (2011).
[Crossref] [PubMed]

Sulkin, J.

H. S. Kim, E. Brueckner, J. Song, Y. Li, S. Kim, C. Lu, J. Sulkin, K. Choquette, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting,” Proc. Natl. Acad. Sci. U.S.A. 108(25), 10072–10077 (2011).
[Crossref] [PubMed]

Sun, Y.

P. Tian, Z. Chen, Y. Sun, S. Qi, H. Zhang, J. Deng, F. Yu, T. Yu, X. Kang, Z. Qin, and G. Zhang, “Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs,” Mater. Sci. Eng. B 175(3), 213–216 (2010).
[Crossref]

Y. Sun, T. Yu, H. Zhao, X. Shan, X. Zhang, Z. Chen, X. Kang, D. Yu, and G. Zhang, “Microanalyses of the reverse-bias leakage current increase in the laser lift off GaN-based light emitting diodes,” J. Appl. Phys. 106(1), 013101 (2009).
[Crossref]

P. Tian, E. Xie, Z. Gong, Z. Chen, T. Yu, Y. Sun, S. Qi, Y. Chen, Y. Zhang, S. Calvez, E. Gu, G. Zhang, and M. D. Dawson, “Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate,” in Proceedings of IEEE Photonics Conference (IEEE, 2011), pp. 551–552.
[Crossref]

Tian, P.

P. Tian, J. J. D. McKendry, J. Herrnsdorf, S. Watson, R. Ferreira, I. M. Watson, E. Gu, A. E. Kelly, and M. D. Dawson, “Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes,” Appl. Phys. Lett. 105(17), 171107 (2014).
[Crossref]

W. Yang, S. Zhang, J. J. D. McKendry, J. Herrnsdorf, P. Tian, Z. Gong, Q. Ji, I. M. Watson, E. Gu, M. D. Dawson, L. Feng, C. Wang, and X. Hu, “Size-dependent capacitance study on InGaN-based micro-light-emitting diodes,” J. Appl. Phys. 116(4), 044512 (2014).
[Crossref]

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

P. Tian, Z. Chen, Y. Sun, S. Qi, H. Zhang, J. Deng, F. Yu, T. Yu, X. Kang, Z. Qin, and G. Zhang, “Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs,” Mater. Sci. Eng. B 175(3), 213–216 (2010).
[Crossref]

P. Tian, E. Xie, Z. Gong, Z. Chen, T. Yu, Y. Sun, S. Qi, Y. Chen, Y. Zhang, S. Calvez, E. Gu, G. Zhang, and M. D. Dawson, “Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate,” in Proceedings of IEEE Photonics Conference (IEEE, 2011), pp. 551–552.
[Crossref]

Trindade, A. J.

Verzellesi, G.

G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
[Crossref]

Wagner, J.

C. Goßler, C. Bierbrauer, R. Moser, M. Kunzer, K. Holc, W. Pletschen, K. Köhler, J. Wagner, M. Schwaerzle, P. Ruther, O. Paul, J. Neef, D. Keppeler, G. Hoch, T. Moser, and U. T. Schwarz, “GaN-based micro-LED arrays on flexible substrates for optical cochlear implants,” J. Phys. D Appl. Phys. 47(20), 205401 (2014).

Wallis, D. J.

Wang, C.

W. Yang, S. Zhang, J. J. D. McKendry, J. Herrnsdorf, P. Tian, Z. Gong, Q. Ji, I. M. Watson, E. Gu, M. D. Dawson, L. Feng, C. Wang, and X. Hu, “Size-dependent capacitance study on InGaN-based micro-light-emitting diodes,” J. Appl. Phys. 116(4), 044512 (2014).
[Crossref]

Wang, S.-C.

J.-R. Chen, Y.-C. Wu, S.-C. Ling, T.-S. Ko, T.-C. Lu, H.-C. Kuo, Y.-K. Kuo, and S.-C. Wang, “Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes,” Appl. Phys. B 98(4), 779–789 (2010).
[Crossref]

Watson, I. M.

A. J. Trindade, B. Guilhabert, E. Y. Xie, R. Ferreira, J. J. D. McKendry, D. Zhu, N. Laurand, E. Gu, D. J. Wallis, I. M. Watson, C. J. Humphreys, and M. D. Dawson, “Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing,” Opt. Express 23(7), 9329–9338 (2015).
[Crossref] [PubMed]

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

W. Yang, S. Zhang, J. J. D. McKendry, J. Herrnsdorf, P. Tian, Z. Gong, Q. Ji, I. M. Watson, E. Gu, M. D. Dawson, L. Feng, C. Wang, and X. Hu, “Size-dependent capacitance study on InGaN-based micro-light-emitting diodes,” J. Appl. Phys. 116(4), 044512 (2014).
[Crossref]

P. Tian, J. J. D. McKendry, J. Herrnsdorf, S. Watson, R. Ferreira, I. M. Watson, E. Gu, A. E. Kelly, and M. D. Dawson, “Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes,” Appl. Phys. Lett. 105(17), 171107 (2014).
[Crossref]

Z. Gong, S. Jin, Y. Chen, J. McKendry, D. Massoubre, I. M. Watson, E. Gu, and M. D. Dawson, “Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes,” J. Appl. Phys. 107(1), 013103 (2010).
[Crossref]

Watson, S.

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

P. Tian, J. J. D. McKendry, J. Herrnsdorf, S. Watson, R. Ferreira, I. M. Watson, E. Gu, A. E. Kelly, and M. D. Dawson, “Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes,” Appl. Phys. Lett. 105(17), 171107 (2014).
[Crossref]

Wierer, J. J.

T. I. Kim, Y. H. Jung, J. Song, D. Kim, Y. Li, H. S. Kim, I. S. Song, J. J. Wierer, H. A. Pao, Y. Huang, and J. A. Rogers, “High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates,” Small 8(11), 1643–1649 (2012).
[Crossref] [PubMed]

Wu, J.

S.-I. Park, A.-P. Le, J. Wu, Y. Huang, X. Li, and J. A. Rogers, “Light emission characteristics and mechanics of foldable inorganic light-emitting diodes,” Adv. Mater. 22(28), 3062–3066 (2010).
[Crossref] [PubMed]

S. I. Park, Y. Xiong, R. H. Kim, P. Elvikis, M. Meitl, D. H. Kim, J. Wu, J. Yoon, C. J. Yu, Z. Liu, Y. Huang, K. C. Hwang, P. Ferreira, X. Li, K. Choquette, and J. A. Rogers, “Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays,” Science 325(5943), 977–981 (2009).
[Crossref] [PubMed]

Wu, Y.-C.

J.-R. Chen, Y.-C. Wu, S.-C. Ling, T.-S. Ko, T.-C. Lu, H.-C. Kuo, Y.-K. Kuo, and S.-C. Wang, “Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes,” Appl. Phys. B 98(4), 779–789 (2010).
[Crossref]

Xia, L.

J.-W. Jeong, J. G. McCall, G. Shin, Y. Zhang, R. Al-Hasani, M. Kim, S. Li, J. Y. Sim, K.-I. Jang, Y. Shi, D. Y. Hong, Y. Liu, G. P. Schmitz, L. Xia, Z. He, P. Gamble, W. Z. Ray, Y. Huang, M. R. Bruchas, and J. A. Rogers, “Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics,” Cell 162(3), 662–674 (2015).
[Crossref] [PubMed]

Xie, E.

P. Tian, E. Xie, Z. Gong, Z. Chen, T. Yu, Y. Sun, S. Qi, Y. Chen, Y. Zhang, S. Calvez, E. Gu, G. Zhang, and M. D. Dawson, “Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate,” in Proceedings of IEEE Photonics Conference (IEEE, 2011), pp. 551–552.
[Crossref]

Xie, E. Y.

Xiong, Y.

S. I. Park, Y. Xiong, R. H. Kim, P. Elvikis, M. Meitl, D. H. Kim, J. Wu, J. Yoon, C. J. Yu, Z. Liu, Y. Huang, K. C. Hwang, P. Ferreira, X. Li, K. Choquette, and J. A. Rogers, “Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays,” Science 325(5943), 977–981 (2009).
[Crossref] [PubMed]

Yang, W.

W. Yang, S. Zhang, J. J. D. McKendry, J. Herrnsdorf, P. Tian, Z. Gong, Q. Ji, I. M. Watson, E. Gu, M. D. Dawson, L. Feng, C. Wang, and X. Hu, “Size-dependent capacitance study on InGaN-based micro-light-emitting diodes,” J. Appl. Phys. 116(4), 044512 (2014).
[Crossref]

Yoon, J.

S. I. Park, Y. Xiong, R. H. Kim, P. Elvikis, M. Meitl, D. H. Kim, J. Wu, J. Yoon, C. J. Yu, Z. Liu, Y. Huang, K. C. Hwang, P. Ferreira, X. Li, K. Choquette, and J. A. Rogers, “Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays,” Science 325(5943), 977–981 (2009).
[Crossref] [PubMed]

Yu, C. J.

S. I. Park, Y. Xiong, R. H. Kim, P. Elvikis, M. Meitl, D. H. Kim, J. Wu, J. Yoon, C. J. Yu, Z. Liu, Y. Huang, K. C. Hwang, P. Ferreira, X. Li, K. Choquette, and J. A. Rogers, “Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays,” Science 325(5943), 977–981 (2009).
[Crossref] [PubMed]

Yu, D.

Y. Sun, T. Yu, H. Zhao, X. Shan, X. Zhang, Z. Chen, X. Kang, D. Yu, and G. Zhang, “Microanalyses of the reverse-bias leakage current increase in the laser lift off GaN-based light emitting diodes,” J. Appl. Phys. 106(1), 013101 (2009).
[Crossref]

Yu, F.

P. Tian, Z. Chen, Y. Sun, S. Qi, H. Zhang, J. Deng, F. Yu, T. Yu, X. Kang, Z. Qin, and G. Zhang, “Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs,” Mater. Sci. Eng. B 175(3), 213–216 (2010).
[Crossref]

Yu, T.

P. Tian, Z. Chen, Y. Sun, S. Qi, H. Zhang, J. Deng, F. Yu, T. Yu, X. Kang, Z. Qin, and G. Zhang, “Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs,” Mater. Sci. Eng. B 175(3), 213–216 (2010).
[Crossref]

Y. Sun, T. Yu, H. Zhao, X. Shan, X. Zhang, Z. Chen, X. Kang, D. Yu, and G. Zhang, “Microanalyses of the reverse-bias leakage current increase in the laser lift off GaN-based light emitting diodes,” J. Appl. Phys. 106(1), 013101 (2009).
[Crossref]

P. Tian, E. Xie, Z. Gong, Z. Chen, T. Yu, Y. Sun, S. Qi, Y. Chen, Y. Zhang, S. Calvez, E. Gu, G. Zhang, and M. D. Dawson, “Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate,” in Proceedings of IEEE Photonics Conference (IEEE, 2011), pp. 551–552.
[Crossref]

Zanoni, E.

G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
[Crossref]

Zhang, G.

P. Tian, Z. Chen, Y. Sun, S. Qi, H. Zhang, J. Deng, F. Yu, T. Yu, X. Kang, Z. Qin, and G. Zhang, “Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs,” Mater. Sci. Eng. B 175(3), 213–216 (2010).
[Crossref]

Y. Sun, T. Yu, H. Zhao, X. Shan, X. Zhang, Z. Chen, X. Kang, D. Yu, and G. Zhang, “Microanalyses of the reverse-bias leakage current increase in the laser lift off GaN-based light emitting diodes,” J. Appl. Phys. 106(1), 013101 (2009).
[Crossref]

P. Tian, E. Xie, Z. Gong, Z. Chen, T. Yu, Y. Sun, S. Qi, Y. Chen, Y. Zhang, S. Calvez, E. Gu, G. Zhang, and M. D. Dawson, “Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate,” in Proceedings of IEEE Photonics Conference (IEEE, 2011), pp. 551–552.
[Crossref]

Zhang, H.

P. Tian, Z. Chen, Y. Sun, S. Qi, H. Zhang, J. Deng, F. Yu, T. Yu, X. Kang, Z. Qin, and G. Zhang, “Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs,” Mater. Sci. Eng. B 175(3), 213–216 (2010).
[Crossref]

Zhang, S.

W. Yang, S. Zhang, J. J. D. McKendry, J. Herrnsdorf, P. Tian, Z. Gong, Q. Ji, I. M. Watson, E. Gu, M. D. Dawson, L. Feng, C. Wang, and X. Hu, “Size-dependent capacitance study on InGaN-based micro-light-emitting diodes,” J. Appl. Phys. 116(4), 044512 (2014).
[Crossref]

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

J. J. D. McKendry, D. Massoubre, S. Zhang, B. R. Rae, R. P. Green, E. Gu, R. K. Henderson, A. E. Kelly, and M. D. Dawson, “Visible light communications using a CMOS-controlled micro-light-emitting diode array,” J. Lightwave Technol. 30(1), 61–67 (2012).
[Crossref]

Zhang, X.

Y. Sun, T. Yu, H. Zhao, X. Shan, X. Zhang, Z. Chen, X. Kang, D. Yu, and G. Zhang, “Microanalyses of the reverse-bias leakage current increase in the laser lift off GaN-based light emitting diodes,” J. Appl. Phys. 106(1), 013101 (2009).
[Crossref]

Zhang, Y.

J.-W. Jeong, J. G. McCall, G. Shin, Y. Zhang, R. Al-Hasani, M. Kim, S. Li, J. Y. Sim, K.-I. Jang, Y. Shi, D. Y. Hong, Y. Liu, G. P. Schmitz, L. Xia, Z. He, P. Gamble, W. Z. Ray, Y. Huang, M. R. Bruchas, and J. A. Rogers, “Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics,” Cell 162(3), 662–674 (2015).
[Crossref] [PubMed]

P. Tian, E. Xie, Z. Gong, Z. Chen, T. Yu, Y. Sun, S. Qi, Y. Chen, Y. Zhang, S. Calvez, E. Gu, G. Zhang, and M. D. Dawson, “Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate,” in Proceedings of IEEE Photonics Conference (IEEE, 2011), pp. 551–552.
[Crossref]

Zhao, H.

Y. Sun, T. Yu, H. Zhao, X. Shan, X. Zhang, Z. Chen, X. Kang, D. Yu, and G. Zhang, “Microanalyses of the reverse-bias leakage current increase in the laser lift off GaN-based light emitting diodes,” J. Appl. Phys. 106(1), 013101 (2009).
[Crossref]

Zhu, D.

A. J. Trindade, B. Guilhabert, E. Y. Xie, R. Ferreira, J. J. D. McKendry, D. Zhu, N. Laurand, E. Gu, D. J. Wallis, I. M. Watson, C. J. Humphreys, and M. D. Dawson, “Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing,” Opt. Express 23(7), 9329–9338 (2015).
[Crossref] [PubMed]

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

Adv. Mater. (1)

S.-I. Park, A.-P. Le, J. Wu, Y. Huang, X. Li, and J. A. Rogers, “Light emission characteristics and mechanics of foldable inorganic light-emitting diodes,” Adv. Mater. 22(28), 3062–3066 (2010).
[Crossref] [PubMed]

Appl. Phys. B (1)

J.-R. Chen, Y.-C. Wu, S.-C. Ling, T.-S. Ko, T.-C. Lu, H.-C. Kuo, Y.-K. Kuo, and S.-C. Wang, “Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes,” Appl. Phys. B 98(4), 779–789 (2010).
[Crossref]

Appl. Phys. Lett. (1)

P. Tian, J. J. D. McKendry, J. Herrnsdorf, S. Watson, R. Ferreira, I. M. Watson, E. Gu, A. E. Kelly, and M. D. Dawson, “Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes,” Appl. Phys. Lett. 105(17), 171107 (2014).
[Crossref]

Cell (1)

J.-W. Jeong, J. G. McCall, G. Shin, Y. Zhang, R. Al-Hasani, M. Kim, S. Li, J. Y. Sim, K.-I. Jang, Y. Shi, D. Y. Hong, Y. Liu, G. P. Schmitz, L. Xia, Z. He, P. Gamble, W. Z. Ray, Y. Huang, M. R. Bruchas, and J. A. Rogers, “Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics,” Cell 162(3), 662–674 (2015).
[Crossref] [PubMed]

J. Appl. Phys. (5)

W. Yang, S. Zhang, J. J. D. McKendry, J. Herrnsdorf, P. Tian, Z. Gong, Q. Ji, I. M. Watson, E. Gu, M. D. Dawson, L. Feng, C. Wang, and X. Hu, “Size-dependent capacitance study on InGaN-based micro-light-emitting diodes,” J. Appl. Phys. 116(4), 044512 (2014).
[Crossref]

Z. Gong, S. Jin, Y. Chen, J. McKendry, D. Massoubre, I. M. Watson, E. Gu, and M. D. Dawson, “Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes,” J. Appl. Phys. 107(1), 013103 (2010).
[Crossref]

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

Y. Sun, T. Yu, H. Zhao, X. Shan, X. Zhang, Z. Chen, X. Kang, D. Yu, and G. Zhang, “Microanalyses of the reverse-bias leakage current increase in the laser lift off GaN-based light emitting diodes,” J. Appl. Phys. 106(1), 013101 (2009).
[Crossref]

G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
[Crossref]

J. Lightwave Technol. (1)

J. Phys. D Appl. Phys. (1)

C. Goßler, C. Bierbrauer, R. Moser, M. Kunzer, K. Holc, W. Pletschen, K. Köhler, J. Wagner, M. Schwaerzle, P. Ruther, O. Paul, J. Neef, D. Keppeler, G. Hoch, T. Moser, and U. T. Schwarz, “GaN-based micro-LED arrays on flexible substrates for optical cochlear implants,” J. Phys. D Appl. Phys. 47(20), 205401 (2014).

Jpn. J. Appl. Phys. (1)

B. Hahn, B. Galler, and K. Engl, “Development of high-efficiency and high-power vertical light emitting diodes,” Jpn. J. Appl. Phys. 53(10), 100208 (2014).
[Crossref]

Mater. Sci. Eng. B (1)

P. Tian, Z. Chen, Y. Sun, S. Qi, H. Zhang, J. Deng, F. Yu, T. Yu, X. Kang, Z. Qin, and G. Zhang, “Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs,” Mater. Sci. Eng. B 175(3), 213–216 (2010).
[Crossref]

Nanoscale Res. Lett. (1)

Y. C. Chiang, C. C. Lin, and H. C. Kuo, “Novel thin-GaN LED structure adopted micro abraded surface to compare with conventional vertical LEDs in ultraviolet light,” Nanoscale Res. Lett. 10(1), 182 (2015).
[Crossref] [PubMed]

Opt. Express (1)

Proc. Natl. Acad. Sci. U.S.A. (1)

H. S. Kim, E. Brueckner, J. Song, Y. Li, S. Kim, C. Lu, J. Sulkin, K. Choquette, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting,” Proc. Natl. Acad. Sci. U.S.A. 108(25), 10072–10077 (2011).
[Crossref] [PubMed]

Science (1)

S. I. Park, Y. Xiong, R. H. Kim, P. Elvikis, M. Meitl, D. H. Kim, J. Wu, J. Yoon, C. J. Yu, Z. Liu, Y. Huang, K. C. Hwang, P. Ferreira, X. Li, K. Choquette, and J. A. Rogers, “Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays,” Science 325(5943), 977–981 (2009).
[Crossref] [PubMed]

Small (1)

T. I. Kim, Y. H. Jung, J. Song, D. Kim, Y. Li, H. S. Kim, I. S. Song, J. J. Wierer, H. A. Pao, Y. Huang, and J. A. Rogers, “High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates,” Small 8(11), 1643–1649 (2012).
[Crossref] [PubMed]

Other (3)

P. Tian, E. Xie, Z. Gong, Z. Chen, T. Yu, Y. Sun, S. Qi, Y. Chen, Y. Zhang, S. Calvez, E. Gu, G. Zhang, and M. D. Dawson, “Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate,” in Proceedings of IEEE Photonics Conference (IEEE, 2011), pp. 551–552.
[Crossref]

APSYS by Crosslight Software, Inc., Burnaby, Canada, http://www.crosslight.com .

J. Piprek and S. Nakamura, “Physics of high-power InGaN/GaN lasers,” IEEE Proc. Optoelectron. 149(4), 145–151 (2002).
[Crossref]

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (6)

Fig. 1
Fig. 1 In the left frame are illustrations of processing steps for fabricating flexible micro-LEDs. In the right frame are the microphotographs of flexible micro-LEDs during fabrication. Bottom: etched flexible micro-LED mesas. Middle: patterned SU8 as the isolation layer for p-pad and n-pad. Top: deposited Ti/Al/Ti/Au to form interconnected electrodes of flexible micro-LEDs array. The flexible micro-LED pixel size is 140 μm.
Fig. 2
Fig. 2 The typical I-V characteristics of flexible micro-LEDs before and after ten bending cycles. Inset: current at 5 V for 6 randomly picked pixels before bending test.
Fig. 3
Fig. 3 Experimentally measured EL spectra of flexible micro-LEDs at 1 mA with substrate bending radii of infinity, 6 mm, and 3 mm, respectively. Inset: optical images of probing a flexible micro-LED pixel under a bending radius 3 mm. The pixel size is 140 μm.
Fig. 4
Fig. 4 L-I characteristics of a typical flexible micro-LED on a column with a bending radius 6 mm. Inset: light output power at 5 mA for 6 randomly picked pixels.
Fig. 5
Fig. 5 (a) Typical optical image of probing interconnected flexible micro-LED pixels on a column with a bending radius 12 mm. Light emission of (b) a row and (c) a 4 × 4 array of flexible micro-LEDs. (d) Enlarged image of the interconnected metal track on a flexible micro-LED. The flexible micro-LED pixel size is 140 μm.
Fig. 6
Fig. 6 (a)The VLC setup for flexible micro-LEDs under a bending radius 12 mm. (b) Measured modulation bandwidth of one typical flexible micro-LED pixel. The eye diagrams for data transmission speeds (c) 75 Mbit/s at 28 mA and (d) 120 Mbit/s at 60 mA.

Metrics