Abstract

We report continuous-wave (CW) operation up to 20 °C of 1.5-μm wavelength npn-InGaAsP/InP multiple quantum well (MQW) transistor laser (TL) with a deep-ridge structure. With CW laser emission, the common emitter current gain of the device can be over 3.5, which is significantly larger than those of the previously reported long wavelength TLs. It is found that at low base current, the laser operation occurs on the first excited state of the MQWs. At high base current, however, the device shows stimulated emissions on the ground state transition. The trend is contrary to what has been observed in the GaAs based TLs and is explained by the change of carrier flow at different base currents.

© 2015 Optical Society of America

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  1. M. Feng, N. Holonyak, G. Walter, and R. Chan, “Room temperature continuous wave operation of a heterojunction bipolar transistor laser,” Appl. Phys. Lett. 87(13), 131103 (2005).
    [Crossref]
  2. N. Holonyak and M. Feng, “The transistor laser,” IEEE Spectr. 43(2), 50–55 (2006).
    [Crossref]
  3. M. Feng, N. Holonyak, H. W. Then, and G. Walter, “Charge control analysis of transistor laser operation,” Appl. Phys. Lett. 91(5), 053501 (2007).
    [Crossref]
  4. H. W. Then, M. Feng, N. Holonyak, and C. H. Wu, “Experimental determination of the effective minority carrier lifetime in the operation of a quantum-well n-p-n heterojunction bipolar light-emitting transistor of varying base quantum-well design and doping,” Appl. Phys. Lett. 91(3), 033505 (2007).
    [Crossref]
  5. M. Feng, N. Holonyak, H. W. Then, C. H. Wu, and G. Walter, “Tunnel junction transistor laser,” Appl. Phys. Lett. 94(4), 041118 (2009).
    [Crossref]
  6. H. W. Then, C. H. Wu, G. Walter, M. Feng, and N. Holonyak., “Electrical-optical signal mixing and multiplication (2 →22 GHz) with a tunnel junction transistor laser,” Appl. Phys. Lett. 94(10), 101114 (2009).
    [Crossref]
  7. S. Liang, H. L. Zhu, D. H. Kong, B. Niu, L. J. Zhao, and W. Wang, “Temperature performance of the edge emitting transistor laser,” Appl. Phys. Lett. 99(1), 013503 (2011).
    [Crossref]
  8. F. Dixon, M. Feng, N. Holonyak, Y. Huang, X. B. Zhang, J. H. Ryou, and R. D. Dupuis, “Transistor laser with emission wavelength at 1544 nm,” Appl. Phys. Lett. 93(2), 021111 (2008).
    [Crossref]
  9. N. Sato, M. Shirao, T. Sato, M. Yukinari, N. Nishiyama, T. Amemiya, and S. Arai, “Design and characterization of AlGaInAs/InP buried heterostructure transistor lasers emitting at 1.3-μm wavelength,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1502608 (2013).
    [Crossref]
  10. S. Liang, D. H. Kong, H. L. Zhu, L. J. Zhao, J. Q. Pan, and W. Wang, “InP-based deep-ridge NPN transistor laser,” Opt. Lett. 36(16), 3206–3208 (2011).
    [Crossref] [PubMed]
  11. W. Huo, S. Liang, C. Zhang, S. Tan, L. Han, H. Xie, H. Zhu, and W. Wang, “Fabrication and characterization of deep ridge InGaAsP/InP light emitting transistors,” Opt. Express 22(2), 1806–1814 (2014).
    [Crossref] [PubMed]
  12. Z. Duan, W. Shi, L. Chrostowski, X. Huang, N. Zhou, and G. Chai, “Design and epitaxy of 1.5 μm InGaAsP-InP MQW material for a transistor laser,” Opt. Express 18(2), 1501–1509 (2010).
    [Crossref] [PubMed]
  13. S. Y. Yang and J. B. Yoo, “Characteristics of Zn diffusion in planar and patterned InP substrate using Zn3P2 film and rapid thermal annealing process,” Surf. Coat. Tech. 131(1-3), 66–69 (2000).
    [Crossref]
  14. M. Feng, N. Holonyak, A. James, K. Cimino, G. Walter, and R. Chan, “Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser,” Appl. Phys. Lett. 89(11), 113504 (2006).
    [Crossref]
  15. M. Feng, N. Holonyak, and A. James, “Temperature dependence of a high-performance narrow-stripe (1 µm) single quantum-well transistor laser,” Appl. Phys. Lett. 98(5), 051107 (2011).
    [Crossref]
  16. F. Tan, W. Xu, X. Huang, M. Feng, and N. Holonyak., “The effect of ground and first excited state transitions on transistor laser relative intensity noise,” Appl. Phys. Lett. 102(8), 081103 (2013).
    [Crossref]
  17. C. Blaauw and L. Hobbs, “Donor-acceptor pair formation in InP doped simultaneously with Si and Zn during metalorganic chemical vapor deposition,” Appl. Phys. Lett. 59(6), 674–676 (1991).
    [Crossref]
  18. W. Hafez, J. W. Lai, and M. Feng, “InP/InGaAs SHBTs with 75 nm collector and fT> 500 GHz,” Electron. Lett. 39(20), 1475–1476 (2003).
    [Crossref]
  19. U. T. Schwarz, M. Pindl, E. Sturm, M. Furitsch, A. Leber, S. Miller, A. Lell, and V. Härle, “Influence of ridge geometry on lateral mode stability of (Al,In)GaN laser diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 202(2), 261–270 (2005).
    [Crossref]

2014 (1)

2013 (2)

N. Sato, M. Shirao, T. Sato, M. Yukinari, N. Nishiyama, T. Amemiya, and S. Arai, “Design and characterization of AlGaInAs/InP buried heterostructure transistor lasers emitting at 1.3-μm wavelength,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1502608 (2013).
[Crossref]

F. Tan, W. Xu, X. Huang, M. Feng, and N. Holonyak., “The effect of ground and first excited state transitions on transistor laser relative intensity noise,” Appl. Phys. Lett. 102(8), 081103 (2013).
[Crossref]

2011 (3)

S. Liang, D. H. Kong, H. L. Zhu, L. J. Zhao, J. Q. Pan, and W. Wang, “InP-based deep-ridge NPN transistor laser,” Opt. Lett. 36(16), 3206–3208 (2011).
[Crossref] [PubMed]

M. Feng, N. Holonyak, and A. James, “Temperature dependence of a high-performance narrow-stripe (1 µm) single quantum-well transistor laser,” Appl. Phys. Lett. 98(5), 051107 (2011).
[Crossref]

S. Liang, H. L. Zhu, D. H. Kong, B. Niu, L. J. Zhao, and W. Wang, “Temperature performance of the edge emitting transistor laser,” Appl. Phys. Lett. 99(1), 013503 (2011).
[Crossref]

2010 (1)

2009 (2)

M. Feng, N. Holonyak, H. W. Then, C. H. Wu, and G. Walter, “Tunnel junction transistor laser,” Appl. Phys. Lett. 94(4), 041118 (2009).
[Crossref]

H. W. Then, C. H. Wu, G. Walter, M. Feng, and N. Holonyak., “Electrical-optical signal mixing and multiplication (2 →22 GHz) with a tunnel junction transistor laser,” Appl. Phys. Lett. 94(10), 101114 (2009).
[Crossref]

2008 (1)

F. Dixon, M. Feng, N. Holonyak, Y. Huang, X. B. Zhang, J. H. Ryou, and R. D. Dupuis, “Transistor laser with emission wavelength at 1544 nm,” Appl. Phys. Lett. 93(2), 021111 (2008).
[Crossref]

2007 (2)

H. W. Then, M. Feng, N. Holonyak, and C. H. Wu, “Experimental determination of the effective minority carrier lifetime in the operation of a quantum-well n-p-n heterojunction bipolar light-emitting transistor of varying base quantum-well design and doping,” Appl. Phys. Lett. 91(3), 033505 (2007).
[Crossref]

M. Feng, N. Holonyak, H. W. Then, and G. Walter, “Charge control analysis of transistor laser operation,” Appl. Phys. Lett. 91(5), 053501 (2007).
[Crossref]

2006 (2)

N. Holonyak and M. Feng, “The transistor laser,” IEEE Spectr. 43(2), 50–55 (2006).
[Crossref]

M. Feng, N. Holonyak, A. James, K. Cimino, G. Walter, and R. Chan, “Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser,” Appl. Phys. Lett. 89(11), 113504 (2006).
[Crossref]

2005 (2)

M. Feng, N. Holonyak, G. Walter, and R. Chan, “Room temperature continuous wave operation of a heterojunction bipolar transistor laser,” Appl. Phys. Lett. 87(13), 131103 (2005).
[Crossref]

U. T. Schwarz, M. Pindl, E. Sturm, M. Furitsch, A. Leber, S. Miller, A. Lell, and V. Härle, “Influence of ridge geometry on lateral mode stability of (Al,In)GaN laser diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 202(2), 261–270 (2005).
[Crossref]

2003 (1)

W. Hafez, J. W. Lai, and M. Feng, “InP/InGaAs SHBTs with 75 nm collector and fT> 500 GHz,” Electron. Lett. 39(20), 1475–1476 (2003).
[Crossref]

2000 (1)

S. Y. Yang and J. B. Yoo, “Characteristics of Zn diffusion in planar and patterned InP substrate using Zn3P2 film and rapid thermal annealing process,” Surf. Coat. Tech. 131(1-3), 66–69 (2000).
[Crossref]

1991 (1)

C. Blaauw and L. Hobbs, “Donor-acceptor pair formation in InP doped simultaneously with Si and Zn during metalorganic chemical vapor deposition,” Appl. Phys. Lett. 59(6), 674–676 (1991).
[Crossref]

Amemiya, T.

N. Sato, M. Shirao, T. Sato, M. Yukinari, N. Nishiyama, T. Amemiya, and S. Arai, “Design and characterization of AlGaInAs/InP buried heterostructure transistor lasers emitting at 1.3-μm wavelength,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1502608 (2013).
[Crossref]

Arai, S.

N. Sato, M. Shirao, T. Sato, M. Yukinari, N. Nishiyama, T. Amemiya, and S. Arai, “Design and characterization of AlGaInAs/InP buried heterostructure transistor lasers emitting at 1.3-μm wavelength,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1502608 (2013).
[Crossref]

Blaauw, C.

C. Blaauw and L. Hobbs, “Donor-acceptor pair formation in InP doped simultaneously with Si and Zn during metalorganic chemical vapor deposition,” Appl. Phys. Lett. 59(6), 674–676 (1991).
[Crossref]

Chai, G.

Chan, R.

M. Feng, N. Holonyak, A. James, K. Cimino, G. Walter, and R. Chan, “Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser,” Appl. Phys. Lett. 89(11), 113504 (2006).
[Crossref]

M. Feng, N. Holonyak, G. Walter, and R. Chan, “Room temperature continuous wave operation of a heterojunction bipolar transistor laser,” Appl. Phys. Lett. 87(13), 131103 (2005).
[Crossref]

Chrostowski, L.

Cimino, K.

M. Feng, N. Holonyak, A. James, K. Cimino, G. Walter, and R. Chan, “Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser,” Appl. Phys. Lett. 89(11), 113504 (2006).
[Crossref]

Dixon, F.

F. Dixon, M. Feng, N. Holonyak, Y. Huang, X. B. Zhang, J. H. Ryou, and R. D. Dupuis, “Transistor laser with emission wavelength at 1544 nm,” Appl. Phys. Lett. 93(2), 021111 (2008).
[Crossref]

Duan, Z.

Dupuis, R. D.

F. Dixon, M. Feng, N. Holonyak, Y. Huang, X. B. Zhang, J. H. Ryou, and R. D. Dupuis, “Transistor laser with emission wavelength at 1544 nm,” Appl. Phys. Lett. 93(2), 021111 (2008).
[Crossref]

Feng, M.

F. Tan, W. Xu, X. Huang, M. Feng, and N. Holonyak., “The effect of ground and first excited state transitions on transistor laser relative intensity noise,” Appl. Phys. Lett. 102(8), 081103 (2013).
[Crossref]

M. Feng, N. Holonyak, and A. James, “Temperature dependence of a high-performance narrow-stripe (1 µm) single quantum-well transistor laser,” Appl. Phys. Lett. 98(5), 051107 (2011).
[Crossref]

H. W. Then, C. H. Wu, G. Walter, M. Feng, and N. Holonyak., “Electrical-optical signal mixing and multiplication (2 →22 GHz) with a tunnel junction transistor laser,” Appl. Phys. Lett. 94(10), 101114 (2009).
[Crossref]

M. Feng, N. Holonyak, H. W. Then, C. H. Wu, and G. Walter, “Tunnel junction transistor laser,” Appl. Phys. Lett. 94(4), 041118 (2009).
[Crossref]

F. Dixon, M. Feng, N. Holonyak, Y. Huang, X. B. Zhang, J. H. Ryou, and R. D. Dupuis, “Transistor laser with emission wavelength at 1544 nm,” Appl. Phys. Lett. 93(2), 021111 (2008).
[Crossref]

H. W. Then, M. Feng, N. Holonyak, and C. H. Wu, “Experimental determination of the effective minority carrier lifetime in the operation of a quantum-well n-p-n heterojunction bipolar light-emitting transistor of varying base quantum-well design and doping,” Appl. Phys. Lett. 91(3), 033505 (2007).
[Crossref]

M. Feng, N. Holonyak, H. W. Then, and G. Walter, “Charge control analysis of transistor laser operation,” Appl. Phys. Lett. 91(5), 053501 (2007).
[Crossref]

N. Holonyak and M. Feng, “The transistor laser,” IEEE Spectr. 43(2), 50–55 (2006).
[Crossref]

M. Feng, N. Holonyak, A. James, K. Cimino, G. Walter, and R. Chan, “Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser,” Appl. Phys. Lett. 89(11), 113504 (2006).
[Crossref]

M. Feng, N. Holonyak, G. Walter, and R. Chan, “Room temperature continuous wave operation of a heterojunction bipolar transistor laser,” Appl. Phys. Lett. 87(13), 131103 (2005).
[Crossref]

W. Hafez, J. W. Lai, and M. Feng, “InP/InGaAs SHBTs with 75 nm collector and fT> 500 GHz,” Electron. Lett. 39(20), 1475–1476 (2003).
[Crossref]

Furitsch, M.

U. T. Schwarz, M. Pindl, E. Sturm, M. Furitsch, A. Leber, S. Miller, A. Lell, and V. Härle, “Influence of ridge geometry on lateral mode stability of (Al,In)GaN laser diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 202(2), 261–270 (2005).
[Crossref]

Hafez, W.

W. Hafez, J. W. Lai, and M. Feng, “InP/InGaAs SHBTs with 75 nm collector and fT> 500 GHz,” Electron. Lett. 39(20), 1475–1476 (2003).
[Crossref]

Han, L.

Härle, V.

U. T. Schwarz, M. Pindl, E. Sturm, M. Furitsch, A. Leber, S. Miller, A. Lell, and V. Härle, “Influence of ridge geometry on lateral mode stability of (Al,In)GaN laser diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 202(2), 261–270 (2005).
[Crossref]

Hobbs, L.

C. Blaauw and L. Hobbs, “Donor-acceptor pair formation in InP doped simultaneously with Si and Zn during metalorganic chemical vapor deposition,” Appl. Phys. Lett. 59(6), 674–676 (1991).
[Crossref]

Holonyak, N.

F. Tan, W. Xu, X. Huang, M. Feng, and N. Holonyak., “The effect of ground and first excited state transitions on transistor laser relative intensity noise,” Appl. Phys. Lett. 102(8), 081103 (2013).
[Crossref]

M. Feng, N. Holonyak, and A. James, “Temperature dependence of a high-performance narrow-stripe (1 µm) single quantum-well transistor laser,” Appl. Phys. Lett. 98(5), 051107 (2011).
[Crossref]

H. W. Then, C. H. Wu, G. Walter, M. Feng, and N. Holonyak., “Electrical-optical signal mixing and multiplication (2 →22 GHz) with a tunnel junction transistor laser,” Appl. Phys. Lett. 94(10), 101114 (2009).
[Crossref]

M. Feng, N. Holonyak, H. W. Then, C. H. Wu, and G. Walter, “Tunnel junction transistor laser,” Appl. Phys. Lett. 94(4), 041118 (2009).
[Crossref]

F. Dixon, M. Feng, N. Holonyak, Y. Huang, X. B. Zhang, J. H. Ryou, and R. D. Dupuis, “Transistor laser with emission wavelength at 1544 nm,” Appl. Phys. Lett. 93(2), 021111 (2008).
[Crossref]

H. W. Then, M. Feng, N. Holonyak, and C. H. Wu, “Experimental determination of the effective minority carrier lifetime in the operation of a quantum-well n-p-n heterojunction bipolar light-emitting transistor of varying base quantum-well design and doping,” Appl. Phys. Lett. 91(3), 033505 (2007).
[Crossref]

M. Feng, N. Holonyak, H. W. Then, and G. Walter, “Charge control analysis of transistor laser operation,” Appl. Phys. Lett. 91(5), 053501 (2007).
[Crossref]

N. Holonyak and M. Feng, “The transistor laser,” IEEE Spectr. 43(2), 50–55 (2006).
[Crossref]

M. Feng, N. Holonyak, A. James, K. Cimino, G. Walter, and R. Chan, “Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser,” Appl. Phys. Lett. 89(11), 113504 (2006).
[Crossref]

M. Feng, N. Holonyak, G. Walter, and R. Chan, “Room temperature continuous wave operation of a heterojunction bipolar transistor laser,” Appl. Phys. Lett. 87(13), 131103 (2005).
[Crossref]

Huang, X.

F. Tan, W. Xu, X. Huang, M. Feng, and N. Holonyak., “The effect of ground and first excited state transitions on transistor laser relative intensity noise,” Appl. Phys. Lett. 102(8), 081103 (2013).
[Crossref]

Z. Duan, W. Shi, L. Chrostowski, X. Huang, N. Zhou, and G. Chai, “Design and epitaxy of 1.5 μm InGaAsP-InP MQW material for a transistor laser,” Opt. Express 18(2), 1501–1509 (2010).
[Crossref] [PubMed]

Huang, Y.

F. Dixon, M. Feng, N. Holonyak, Y. Huang, X. B. Zhang, J. H. Ryou, and R. D. Dupuis, “Transistor laser with emission wavelength at 1544 nm,” Appl. Phys. Lett. 93(2), 021111 (2008).
[Crossref]

Huo, W.

James, A.

M. Feng, N. Holonyak, and A. James, “Temperature dependence of a high-performance narrow-stripe (1 µm) single quantum-well transistor laser,” Appl. Phys. Lett. 98(5), 051107 (2011).
[Crossref]

M. Feng, N. Holonyak, A. James, K. Cimino, G. Walter, and R. Chan, “Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser,” Appl. Phys. Lett. 89(11), 113504 (2006).
[Crossref]

Kong, D. H.

S. Liang, D. H. Kong, H. L. Zhu, L. J. Zhao, J. Q. Pan, and W. Wang, “InP-based deep-ridge NPN transistor laser,” Opt. Lett. 36(16), 3206–3208 (2011).
[Crossref] [PubMed]

S. Liang, H. L. Zhu, D. H. Kong, B. Niu, L. J. Zhao, and W. Wang, “Temperature performance of the edge emitting transistor laser,” Appl. Phys. Lett. 99(1), 013503 (2011).
[Crossref]

Lai, J. W.

W. Hafez, J. W. Lai, and M. Feng, “InP/InGaAs SHBTs with 75 nm collector and fT> 500 GHz,” Electron. Lett. 39(20), 1475–1476 (2003).
[Crossref]

Leber, A.

U. T. Schwarz, M. Pindl, E. Sturm, M. Furitsch, A. Leber, S. Miller, A. Lell, and V. Härle, “Influence of ridge geometry on lateral mode stability of (Al,In)GaN laser diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 202(2), 261–270 (2005).
[Crossref]

Lell, A.

U. T. Schwarz, M. Pindl, E. Sturm, M. Furitsch, A. Leber, S. Miller, A. Lell, and V. Härle, “Influence of ridge geometry on lateral mode stability of (Al,In)GaN laser diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 202(2), 261–270 (2005).
[Crossref]

Liang, S.

Miller, S.

U. T. Schwarz, M. Pindl, E. Sturm, M. Furitsch, A. Leber, S. Miller, A. Lell, and V. Härle, “Influence of ridge geometry on lateral mode stability of (Al,In)GaN laser diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 202(2), 261–270 (2005).
[Crossref]

Nishiyama, N.

N. Sato, M. Shirao, T. Sato, M. Yukinari, N. Nishiyama, T. Amemiya, and S. Arai, “Design and characterization of AlGaInAs/InP buried heterostructure transistor lasers emitting at 1.3-μm wavelength,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1502608 (2013).
[Crossref]

Niu, B.

S. Liang, H. L. Zhu, D. H. Kong, B. Niu, L. J. Zhao, and W. Wang, “Temperature performance of the edge emitting transistor laser,” Appl. Phys. Lett. 99(1), 013503 (2011).
[Crossref]

Pan, J. Q.

Pindl, M.

U. T. Schwarz, M. Pindl, E. Sturm, M. Furitsch, A. Leber, S. Miller, A. Lell, and V. Härle, “Influence of ridge geometry on lateral mode stability of (Al,In)GaN laser diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 202(2), 261–270 (2005).
[Crossref]

Ryou, J. H.

F. Dixon, M. Feng, N. Holonyak, Y. Huang, X. B. Zhang, J. H. Ryou, and R. D. Dupuis, “Transistor laser with emission wavelength at 1544 nm,” Appl. Phys. Lett. 93(2), 021111 (2008).
[Crossref]

Sato, N.

N. Sato, M. Shirao, T. Sato, M. Yukinari, N. Nishiyama, T. Amemiya, and S. Arai, “Design and characterization of AlGaInAs/InP buried heterostructure transistor lasers emitting at 1.3-μm wavelength,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1502608 (2013).
[Crossref]

Sato, T.

N. Sato, M. Shirao, T. Sato, M. Yukinari, N. Nishiyama, T. Amemiya, and S. Arai, “Design and characterization of AlGaInAs/InP buried heterostructure transistor lasers emitting at 1.3-μm wavelength,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1502608 (2013).
[Crossref]

Schwarz, U. T.

U. T. Schwarz, M. Pindl, E. Sturm, M. Furitsch, A. Leber, S. Miller, A. Lell, and V. Härle, “Influence of ridge geometry on lateral mode stability of (Al,In)GaN laser diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 202(2), 261–270 (2005).
[Crossref]

Shi, W.

Shirao, M.

N. Sato, M. Shirao, T. Sato, M. Yukinari, N. Nishiyama, T. Amemiya, and S. Arai, “Design and characterization of AlGaInAs/InP buried heterostructure transistor lasers emitting at 1.3-μm wavelength,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1502608 (2013).
[Crossref]

Sturm, E.

U. T. Schwarz, M. Pindl, E. Sturm, M. Furitsch, A. Leber, S. Miller, A. Lell, and V. Härle, “Influence of ridge geometry on lateral mode stability of (Al,In)GaN laser diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 202(2), 261–270 (2005).
[Crossref]

Tan, F.

F. Tan, W. Xu, X. Huang, M. Feng, and N. Holonyak., “The effect of ground and first excited state transitions on transistor laser relative intensity noise,” Appl. Phys. Lett. 102(8), 081103 (2013).
[Crossref]

Tan, S.

Then, H. W.

M. Feng, N. Holonyak, H. W. Then, C. H. Wu, and G. Walter, “Tunnel junction transistor laser,” Appl. Phys. Lett. 94(4), 041118 (2009).
[Crossref]

H. W. Then, C. H. Wu, G. Walter, M. Feng, and N. Holonyak., “Electrical-optical signal mixing and multiplication (2 →22 GHz) with a tunnel junction transistor laser,” Appl. Phys. Lett. 94(10), 101114 (2009).
[Crossref]

M. Feng, N. Holonyak, H. W. Then, and G. Walter, “Charge control analysis of transistor laser operation,” Appl. Phys. Lett. 91(5), 053501 (2007).
[Crossref]

H. W. Then, M. Feng, N. Holonyak, and C. H. Wu, “Experimental determination of the effective minority carrier lifetime in the operation of a quantum-well n-p-n heterojunction bipolar light-emitting transistor of varying base quantum-well design and doping,” Appl. Phys. Lett. 91(3), 033505 (2007).
[Crossref]

Walter, G.

H. W. Then, C. H. Wu, G. Walter, M. Feng, and N. Holonyak., “Electrical-optical signal mixing and multiplication (2 →22 GHz) with a tunnel junction transistor laser,” Appl. Phys. Lett. 94(10), 101114 (2009).
[Crossref]

M. Feng, N. Holonyak, H. W. Then, C. H. Wu, and G. Walter, “Tunnel junction transistor laser,” Appl. Phys. Lett. 94(4), 041118 (2009).
[Crossref]

M. Feng, N. Holonyak, H. W. Then, and G. Walter, “Charge control analysis of transistor laser operation,” Appl. Phys. Lett. 91(5), 053501 (2007).
[Crossref]

M. Feng, N. Holonyak, A. James, K. Cimino, G. Walter, and R. Chan, “Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser,” Appl. Phys. Lett. 89(11), 113504 (2006).
[Crossref]

M. Feng, N. Holonyak, G. Walter, and R. Chan, “Room temperature continuous wave operation of a heterojunction bipolar transistor laser,” Appl. Phys. Lett. 87(13), 131103 (2005).
[Crossref]

Wang, W.

Wu, C. H.

M. Feng, N. Holonyak, H. W. Then, C. H. Wu, and G. Walter, “Tunnel junction transistor laser,” Appl. Phys. Lett. 94(4), 041118 (2009).
[Crossref]

H. W. Then, C. H. Wu, G. Walter, M. Feng, and N. Holonyak., “Electrical-optical signal mixing and multiplication (2 →22 GHz) with a tunnel junction transistor laser,” Appl. Phys. Lett. 94(10), 101114 (2009).
[Crossref]

H. W. Then, M. Feng, N. Holonyak, and C. H. Wu, “Experimental determination of the effective minority carrier lifetime in the operation of a quantum-well n-p-n heterojunction bipolar light-emitting transistor of varying base quantum-well design and doping,” Appl. Phys. Lett. 91(3), 033505 (2007).
[Crossref]

Xie, H.

Xu, W.

F. Tan, W. Xu, X. Huang, M. Feng, and N. Holonyak., “The effect of ground and first excited state transitions on transistor laser relative intensity noise,” Appl. Phys. Lett. 102(8), 081103 (2013).
[Crossref]

Yang, S. Y.

S. Y. Yang and J. B. Yoo, “Characteristics of Zn diffusion in planar and patterned InP substrate using Zn3P2 film and rapid thermal annealing process,” Surf. Coat. Tech. 131(1-3), 66–69 (2000).
[Crossref]

Yoo, J. B.

S. Y. Yang and J. B. Yoo, “Characteristics of Zn diffusion in planar and patterned InP substrate using Zn3P2 film and rapid thermal annealing process,” Surf. Coat. Tech. 131(1-3), 66–69 (2000).
[Crossref]

Yukinari, M.

N. Sato, M. Shirao, T. Sato, M. Yukinari, N. Nishiyama, T. Amemiya, and S. Arai, “Design and characterization of AlGaInAs/InP buried heterostructure transistor lasers emitting at 1.3-μm wavelength,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1502608 (2013).
[Crossref]

Zhang, C.

Zhang, X. B.

F. Dixon, M. Feng, N. Holonyak, Y. Huang, X. B. Zhang, J. H. Ryou, and R. D. Dupuis, “Transistor laser with emission wavelength at 1544 nm,” Appl. Phys. Lett. 93(2), 021111 (2008).
[Crossref]

Zhao, L. J.

S. Liang, D. H. Kong, H. L. Zhu, L. J. Zhao, J. Q. Pan, and W. Wang, “InP-based deep-ridge NPN transistor laser,” Opt. Lett. 36(16), 3206–3208 (2011).
[Crossref] [PubMed]

S. Liang, H. L. Zhu, D. H. Kong, B. Niu, L. J. Zhao, and W. Wang, “Temperature performance of the edge emitting transistor laser,” Appl. Phys. Lett. 99(1), 013503 (2011).
[Crossref]

Zhou, N.

Zhu, H.

Zhu, H. L.

S. Liang, H. L. Zhu, D. H. Kong, B. Niu, L. J. Zhao, and W. Wang, “Temperature performance of the edge emitting transistor laser,” Appl. Phys. Lett. 99(1), 013503 (2011).
[Crossref]

S. Liang, D. H. Kong, H. L. Zhu, L. J. Zhao, J. Q. Pan, and W. Wang, “InP-based deep-ridge NPN transistor laser,” Opt. Lett. 36(16), 3206–3208 (2011).
[Crossref] [PubMed]

Appl. Phys. Lett. (11)

M. Feng, N. Holonyak, H. W. Then, and G. Walter, “Charge control analysis of transistor laser operation,” Appl. Phys. Lett. 91(5), 053501 (2007).
[Crossref]

H. W. Then, M. Feng, N. Holonyak, and C. H. Wu, “Experimental determination of the effective minority carrier lifetime in the operation of a quantum-well n-p-n heterojunction bipolar light-emitting transistor of varying base quantum-well design and doping,” Appl. Phys. Lett. 91(3), 033505 (2007).
[Crossref]

M. Feng, N. Holonyak, H. W. Then, C. H. Wu, and G. Walter, “Tunnel junction transistor laser,” Appl. Phys. Lett. 94(4), 041118 (2009).
[Crossref]

H. W. Then, C. H. Wu, G. Walter, M. Feng, and N. Holonyak., “Electrical-optical signal mixing and multiplication (2 →22 GHz) with a tunnel junction transistor laser,” Appl. Phys. Lett. 94(10), 101114 (2009).
[Crossref]

S. Liang, H. L. Zhu, D. H. Kong, B. Niu, L. J. Zhao, and W. Wang, “Temperature performance of the edge emitting transistor laser,” Appl. Phys. Lett. 99(1), 013503 (2011).
[Crossref]

F. Dixon, M. Feng, N. Holonyak, Y. Huang, X. B. Zhang, J. H. Ryou, and R. D. Dupuis, “Transistor laser with emission wavelength at 1544 nm,” Appl. Phys. Lett. 93(2), 021111 (2008).
[Crossref]

M. Feng, N. Holonyak, A. James, K. Cimino, G. Walter, and R. Chan, “Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser,” Appl. Phys. Lett. 89(11), 113504 (2006).
[Crossref]

M. Feng, N. Holonyak, and A. James, “Temperature dependence of a high-performance narrow-stripe (1 µm) single quantum-well transistor laser,” Appl. Phys. Lett. 98(5), 051107 (2011).
[Crossref]

F. Tan, W. Xu, X. Huang, M. Feng, and N. Holonyak., “The effect of ground and first excited state transitions on transistor laser relative intensity noise,” Appl. Phys. Lett. 102(8), 081103 (2013).
[Crossref]

C. Blaauw and L. Hobbs, “Donor-acceptor pair formation in InP doped simultaneously with Si and Zn during metalorganic chemical vapor deposition,” Appl. Phys. Lett. 59(6), 674–676 (1991).
[Crossref]

M. Feng, N. Holonyak, G. Walter, and R. Chan, “Room temperature continuous wave operation of a heterojunction bipolar transistor laser,” Appl. Phys. Lett. 87(13), 131103 (2005).
[Crossref]

Electron. Lett. (1)

W. Hafez, J. W. Lai, and M. Feng, “InP/InGaAs SHBTs with 75 nm collector and fT> 500 GHz,” Electron. Lett. 39(20), 1475–1476 (2003).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

N. Sato, M. Shirao, T. Sato, M. Yukinari, N. Nishiyama, T. Amemiya, and S. Arai, “Design and characterization of AlGaInAs/InP buried heterostructure transistor lasers emitting at 1.3-μm wavelength,” IEEE J. Sel. Top. Quantum Electron. 19(4), 1502608 (2013).
[Crossref]

IEEE Spectr. (1)

N. Holonyak and M. Feng, “The transistor laser,” IEEE Spectr. 43(2), 50–55 (2006).
[Crossref]

Opt. Express (2)

Opt. Lett. (1)

Phys. Status Solidi., A Appl. Mater. Sci. (1)

U. T. Schwarz, M. Pindl, E. Sturm, M. Furitsch, A. Leber, S. Miller, A. Lell, and V. Härle, “Influence of ridge geometry on lateral mode stability of (Al,In)GaN laser diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 202(2), 261–270 (2005).
[Crossref]

Surf. Coat. Tech. (1)

S. Y. Yang and J. B. Yoo, “Characteristics of Zn diffusion in planar and patterned InP substrate using Zn3P2 film and rapid thermal annealing process,” Surf. Coat. Tech. 131(1-3), 66–69 (2000).
[Crossref]

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Figures (5)

Fig. 1
Fig. 1 The schematic structure of the deep ridge TL.

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Fig. 2
Fig. 2 The depth and concentration profile of Si and Zn with Ga, As and P as markers.

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Fig. 3
Fig. 3 CW L-IB characteristics of the device under CE configuration and different temperatures when VCE = 0 V (a), different VCE when T = 10 °C (b), 15 °C (c), and 20 °C (d). The increase step of VCE is 0.2V.

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Fig. 4
Fig. 4 The CW I-V curves of the TLs under CE mode at 10 °C (a) and 15 °C (b). IB is increased from 0 mA to 140mA with a 10 mA step.

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Fig. 5
Fig. 5 The spectra at different IB under CE mode and when VCE = 1.5V and T = 10 °C.

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