Abstract

Non-planar InGaN/GaN multiple quantum well (MQW) structures are grown on a GaN template with truncated hexagonal pyramids (THPs) featuring c-plane and r-plane surfaces. The THP array is formed by the regrowth of the GaN layer on a selective-area Si-implanted GaN template. Transmission electron microscopy shows that the InGaN/GaN epitaxial layers regrown on the THPs exhibit different growth rates and indium compositions of the InGaN layer between the c-plane and r-plane surfaces. Consequently, InGaN/GaN MQW light-emitting diodes grown on the GaN THP array emit multiple wavelengths approaching near white light.

© 2015 Optical Society of America

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    [Crossref]
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    [Crossref]
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    [Crossref]
  20. J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, and G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001).
    [Crossref]
  21. C. M. Tsai, J. K. Sheu, W. C. Lai, Y. P. Hsu, P. T. Wang, C. T. Kuo, C. W. Kuo, S. J. Chang, and Y. K. Su, “Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD,” IEEE Electron Device Lett. 26(7), 464–466 (2005).
    [Crossref]
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    [Crossref]
  23. S. Kitamura, K. Hiramatsu, and N. Sawaki, “Fabrication of GaN hexagonal pyramids on dot-patterned GaN/sapphire substrates via selective metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys. 34(Part 2, No. 9B), L1184–L1186 (1995).
    [Crossref]
  24. S. Ando, T. Honda, and N. Kobayashi, “Self-Limited Facet Growth for GaAs Tetrahedral Quantum Dots,” Jpn. J. Appl. Phys. 32(Part 2, No.1A/B), L104–L106 (1993).
    [Crossref]
  25. D. Kapolnek, R. D. Underwood, B. P. Keller, S. Keller, S. P. Denbaars, and U. K. Mishra, “Selective area epitaxy of GaN for electron field emission devices,” J. Cryst. Growth 170(1–4), 340–343 (1997).
    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  29. B. Beaumont, S. Haffouz, and P. Gibart, “Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy,” Appl. Phys. Lett. 72(8), 921 (1998).
    [Crossref]
  30. C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu, and I. C. Lin, “Vertical High Quality Mirror-like Facet of GaN-Based Device by Reactive Ion Etching,” Jpn. J. Appl. Phys. 40, 2762 (2001).
  31. J. K. Sheu, G. C. Chi, Y. K. Su, C. C. Liu, C. M. Chang, W. C. Hung, and M. J. Jou, “Luminescence of an InGaN/GaN multiple quantum wells light-emitting diode,” Solid-State Electron. 44(6), 1055–1058 (2000).
    [Crossref]

2014 (1)

J. Piprek, “Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel junction-cascaded active regions,” Appl. Phys. Lett. 104(5), 051118 (2014).
[Crossref]

2013 (1)

Z. H. Zhang, S. T. Tan, Z. Kyaw, Y. Ji, W. Liu, Z. Ju, N. Hasanov, X. W. Sun, and H. V. Demir, “InGaN/GaN light-emitting diode with a polarization tunnel junction,” Appl. Phys. Lett. 102(19), 193508 (2013).
[Crossref]

2012 (1)

D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, “Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy,” J. Vac. Sci. Technol. A 30(4), 041513 (2012).
[Crossref]

2011 (4)

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Drager, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248(3), 549–560 (2011).
[Crossref]

J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, and G. C. Chi, “Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers,” IEEE Electron Device Lett. 32(10), 1400–1402 (2011).
[Crossref]

L. Wang, Z. Lu, S. Liu, and Z. C. Feng, “Shallow–meep InGaN multiple-quantum-well System for dual-wavelength emission grown on semipolar facet GaN,” J. Electron. Mater. 40(7), 1572–1577 (2011).
[Crossref]

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, and A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[Crossref]

2010 (1)

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, and Y. Cho, “Highly efficient yellow photoluminescence from {11–22} InGaN multi-quantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97(24), 241111 (2010).
[Crossref]

2009 (2)

C. Liu, A. Satka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2(12), 121002 (2009).
[Crossref]

T. Shioda, M. Sugiyama, Y. Shimogaki, and Y. Nakano, “Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range,” J. Cryst. Growth 311(10), 2809–2812 (2009).
[Crossref]

2008 (3)

M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1(1), 011106 (2008).
[Crossref]

C. Y. Cho, I. K. Park, M. K. Kwon, J. Y. Kim, S. J. Park, D. R. Jung, and K. W. Kwon, “InGaN/GaN multiple quantum wells grown on microfacets for white-light generation,” Appl. Phys. Lett. 93(24), 241109 (2008).
[Crossref]

H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, and G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103(1), 014908 (2008).
[Crossref]

2007 (1)

M. Ueda, T. Kondou, K. Hayashi, M. Funato, Y. Kawakami, Y. Narukawa, and T. Mukai, “Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets,” Appl. Phys. Lett. 90(17), 171907 (2007).
[Crossref]

2006 (1)

S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, and C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum well light-emitting diodes,” Jpn. J. Appl. Phys. 45(4A), 2463–2466 (2006).
[Crossref]

2005 (1)

C. M. Tsai, J. K. Sheu, W. C. Lai, Y. P. Hsu, P. T. Wang, C. T. Kuo, C. W. Kuo, S. J. Chang, and Y. K. Su, “Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD,” IEEE Electron Device Lett. 26(7), 464–466 (2005).
[Crossref]

2003 (2)

Y. L. Li, T. Gessmann, E. F. Schubert, and J. K. Sheu, “Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths,” J. Appl. Phys. 94(4), 2167 (2003).
[Crossref]

J. E. Greenspan, C. Blaauw, B. Emmerstorfer, R. W. Glew, and I. Shih, “Analysis of a time-dependent supply mechanism in selective area growth by MOCVD,” J. Cryst. Growth 248, 405–410 (2003).
[Crossref]

2002 (2)

J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, S. J. Chang, and G. C. Chi, “Characterization of Si implants in p-type GaN,” IEEE J. Sel. Top. Quantum Electron. 8(4A4), 767–772 (2002).
[Crossref]

M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, “Threading dislocation reduction via laterally overgrown nonpolar (11-20) a-plane GaN,” Appl. Phys. Lett. 81(7), 1201 (2002).
[Crossref]

2001 (2)

J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, and G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001).
[Crossref]

C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu, and I. C. Lin, “Vertical High Quality Mirror-like Facet of GaN-Based Device by Reactive Ion Etching,” Jpn. J. Appl. Phys. 40, 2762 (2001).

2000 (2)

J. K. Sheu, G. C. Chi, Y. K. Su, C. C. Liu, C. M. Chang, W. C. Hung, and M. J. Jou, “Luminescence of an InGaN/GaN multiple quantum wells light-emitting diode,” Solid-State Electron. 44(6), 1055–1058 (2000).
[Crossref]

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1-4), 316–326 (2000).
[Crossref]

1998 (2)

B. Beaumont, S. Haffouz, and P. Gibart, “Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy,” Appl. Phys. Lett. 72(8), 921 (1998).
[Crossref]

J. Park, P. A. Grudowski, C. J. Eiting, and R. D. Dupuis, “Selective-area and lateral epitaxial overgrowth of III–N materials by metal organic chemical vapor deposition,” Appl. Phys. Lett. 73(3), 333 (1998).
[Crossref]

1997 (2)

D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Anisotropic epitaxial lateral growth in GaN selective area epitaxy,” Appl. Phys. Lett. 71(9), 1204 (1997).
[Crossref]

D. Kapolnek, R. D. Underwood, B. P. Keller, S. Keller, S. P. Denbaars, and U. K. Mishra, “Selective area epitaxy of GaN for electron field emission devices,” J. Cryst. Growth 170(1–4), 340–343 (1997).
[Crossref]

1995 (1)

S. Kitamura, K. Hiramatsu, and N. Sawaki, “Fabrication of GaN hexagonal pyramids on dot-patterned GaN/sapphire substrates via selective metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys. 34(Part 2, No. 9B), L1184–L1186 (1995).
[Crossref]

1993 (1)

S. Ando, T. Honda, and N. Kobayashi, “Self-Limited Facet Growth for GaAs Tetrahedral Quantum Dots,” Jpn. J. Appl. Phys. 32(Part 2, No.1A/B), L104–L106 (1993).
[Crossref]

Abid, M.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, and A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[Crossref]

Allsopp, D.

C. Liu, A. Satka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2(12), 121002 (2009).
[Crossref]

Ando, S.

S. Ando, T. Honda, and N. Kobayashi, “Self-Limited Facet Growth for GaAs Tetrahedral Quantum Dots,” Jpn. J. Appl. Phys. 32(Part 2, No.1A/B), L104–L106 (1993).
[Crossref]

Beaumont, B.

B. Beaumont, S. Haffouz, and P. Gibart, “Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy,” Appl. Phys. Lett. 72(8), 921 (1998).
[Crossref]

Beirne, G. J.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Drager, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248(3), 549–560 (2011).
[Crossref]

Bertram, F.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Drager, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248(3), 549–560 (2011).
[Crossref]

Blaauw, C.

J. E. Greenspan, C. Blaauw, B. Emmerstorfer, R. W. Glew, and I. Shih, “Analysis of a time-dependent supply mechanism in selective area growth by MOCVD,” J. Cryst. Growth 248, 405–410 (2003).
[Crossref]

Bonanno, P. L.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, and A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[Crossref]

Browne, D. A.

D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, “Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy,” J. Vac. Sci. Technol. A 30(4), 041513 (2012).
[Crossref]

Cai, Z.-H.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, and A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[Crossref]

Chang, C. M.

J. K. Sheu, G. C. Chi, Y. K. Su, C. C. Liu, C. M. Chang, W. C. Hung, and M. J. Jou, “Luminescence of an InGaN/GaN multiple quantum wells light-emitting diode,” Solid-State Electron. 44(6), 1055–1058 (2000).
[Crossref]

Chang, S. J.

C. M. Tsai, J. K. Sheu, W. C. Lai, Y. P. Hsu, P. T. Wang, C. T. Kuo, C. W. Kuo, S. J. Chang, and Y. K. Su, “Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD,” IEEE Electron Device Lett. 26(7), 464–466 (2005).
[Crossref]

J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, S. J. Chang, and G. C. Chi, “Characterization of Si implants in p-type GaN,” IEEE J. Sel. Top. Quantum Electron. 8(4A4), 767–772 (2002).
[Crossref]

J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, and G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001).
[Crossref]

C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu, and I. C. Lin, “Vertical High Quality Mirror-like Facet of GaN-Based Device by Reactive Ion Etching,” Jpn. J. Appl. Phys. 40, 2762 (2001).

Chen, C. H.

C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu, and I. C. Lin, “Vertical High Quality Mirror-like Facet of GaN-Based Device by Reactive Ion Etching,” Jpn. J. Appl. Phys. 40, 2762 (2001).

Chen, C. W.

J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, and G. C. Chi, “Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers,” IEEE Electron Device Lett. 32(10), 1400–1402 (2011).
[Crossref]

Chi, G. C.

J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, and G. C. Chi, “Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers,” IEEE Electron Device Lett. 32(10), 1400–1402 (2011).
[Crossref]

J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, S. J. Chang, and G. C. Chi, “Characterization of Si implants in p-type GaN,” IEEE J. Sel. Top. Quantum Electron. 8(4A4), 767–772 (2002).
[Crossref]

J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, and G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001).
[Crossref]

C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu, and I. C. Lin, “Vertical High Quality Mirror-like Facet of GaN-Based Device by Reactive Ion Etching,” Jpn. J. Appl. Phys. 40, 2762 (2001).

J. K. Sheu, G. C. Chi, Y. K. Su, C. C. Liu, C. M. Chang, W. C. Hung, and M. J. Jou, “Luminescence of an InGaN/GaN multiple quantum wells light-emitting diode,” Solid-State Electron. 44(6), 1055–1058 (2000).
[Crossref]

Cho, C. Y.

C. Y. Cho, I. K. Park, M. K. Kwon, J. Y. Kim, S. J. Park, D. R. Jung, and K. W. Kwon, “InGaN/GaN multiple quantum wells grown on microfacets for white-light generation,” Appl. Phys. Lett. 93(24), 241109 (2008).
[Crossref]

Cho, Y.

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, and Y. Cho, “Highly efficient yellow photoluminescence from {11–22} InGaN multi-quantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97(24), 241111 (2010).
[Crossref]

Christen, J.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Drager, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248(3), 549–560 (2011).
[Crossref]

Chung, U. I.

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, and Y. Cho, “Highly efficient yellow photoluminescence from {11–22} InGaN multi-quantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97(24), 241111 (2010).
[Crossref]

Chuvilin, A.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Drager, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248(3), 549–560 (2011).
[Crossref]

Craven, M. D.

M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, “Threading dislocation reduction via laterally overgrown nonpolar (11-20) a-plane GaN,” Appl. Phys. Lett. 81(7), 1201 (2002).
[Crossref]

Dai, T.

H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, and G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103(1), 014908 (2008).
[Crossref]

Demir, H. V.

Z. H. Zhang, S. T. Tan, Z. Kyaw, Y. Ji, W. Liu, Z. Ju, N. Hasanov, X. W. Sun, and H. V. Demir, “InGaN/GaN light-emitting diode with a polarization tunnel junction,” Appl. Phys. Lett. 102(19), 193508 (2013).
[Crossref]

DenBaars, S. P.

M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, “Threading dislocation reduction via laterally overgrown nonpolar (11-20) a-plane GaN,” Appl. Phys. Lett. 81(7), 1201 (2002).
[Crossref]

D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Anisotropic epitaxial lateral growth in GaN selective area epitaxy,” Appl. Phys. Lett. 71(9), 1204 (1997).
[Crossref]

D. Kapolnek, R. D. Underwood, B. P. Keller, S. Keller, S. P. Denbaars, and U. K. Mishra, “Selective area epitaxy of GaN for electron field emission devices,” J. Cryst. Growth 170(1–4), 340–343 (1997).
[Crossref]

Drager, A. D.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Drager, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248(3), 549–560 (2011).
[Crossref]

Dupuis, R. D.

J. Park, P. A. Grudowski, C. J. Eiting, and R. D. Dupuis, “Selective-area and lateral epitaxial overgrowth of III–N materials by metal organic chemical vapor deposition,” Appl. Phys. Lett. 73(3), 333 (1998).
[Crossref]

Edwards, P. R.

C. Liu, A. Satka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2(12), 121002 (2009).
[Crossref]

Eiting, C. J.

J. Park, P. A. Grudowski, C. J. Eiting, and R. D. Dupuis, “Selective-area and lateral epitaxial overgrowth of III–N materials by metal organic chemical vapor deposition,” Appl. Phys. Lett. 73(3), 333 (1998).
[Crossref]

Emmerstorfer, B.

J. E. Greenspan, C. Blaauw, B. Emmerstorfer, R. W. Glew, and I. Shih, “Analysis of a time-dependent supply mechanism in selective area growth by MOCVD,” J. Cryst. Growth 248, 405–410 (2003).
[Crossref]

Fang, H.

H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, and G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103(1), 014908 (2008).
[Crossref]

Feneberg, M.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Drager, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248(3), 549–560 (2011).
[Crossref]

Feng, Z. C.

L. Wang, Z. Lu, S. Liu, and Z. C. Feng, “Shallow–meep InGaN multiple-quantum-well System for dual-wavelength emission grown on semipolar facet GaN,” J. Electron. Mater. 40(7), 1572–1577 (2011).
[Crossref]

Funato, M.

M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1(1), 011106 (2008).
[Crossref]

M. Ueda, T. Kondou, K. Hayashi, M. Funato, Y. Kawakami, Y. Narukawa, and T. Mukai, “Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets,” Appl. Phys. Lett. 90(17), 171907 (2007).
[Crossref]

Gautier, S.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, and A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[Crossref]

Gessmann, T.

Y. L. Li, T. Gessmann, E. F. Schubert, and J. K. Sheu, “Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths,” J. Appl. Phys. 94(4), 2167 (2003).
[Crossref]

Gibart, P.

B. Beaumont, S. Haffouz, and P. Gibart, “Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy,” Appl. Phys. Lett. 72(8), 921 (1998).
[Crossref]

Glew, R. W.

J. E. Greenspan, C. Blaauw, B. Emmerstorfer, R. W. Glew, and I. Shih, “Analysis of a time-dependent supply mechanism in selective area growth by MOCVD,” J. Cryst. Growth 248, 405–410 (2003).
[Crossref]

Goh, W. H.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, and A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[Crossref]

Greenspan, J. E.

J. E. Greenspan, C. Blaauw, B. Emmerstorfer, R. W. Glew, and I. Shih, “Analysis of a time-dependent supply mechanism in selective area growth by MOCVD,” J. Cryst. Growth 248, 405–410 (2003).
[Crossref]

Grudowski, P. A.

J. Park, P. A. Grudowski, C. J. Eiting, and R. D. Dupuis, “Selective-area and lateral epitaxial overgrowth of III–N materials by metal organic chemical vapor deposition,” Appl. Phys. Lett. 73(3), 333 (1998).
[Crossref]

Haffouz, S.

B. Beaumont, S. Haffouz, and P. Gibart, “Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy,” Appl. Phys. Lett. 72(8), 921 (1998).
[Crossref]

Hangleiter, A.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Drager, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248(3), 549–560 (2011).
[Crossref]

Hasanov, N.

Z. H. Zhang, S. T. Tan, Z. Kyaw, Y. Ji, W. Liu, Z. Ju, N. Hasanov, X. W. Sun, and H. V. Demir, “InGaN/GaN light-emitting diode with a polarization tunnel junction,” Appl. Phys. Lett. 102(19), 193508 (2013).
[Crossref]

Hayashi, K.

M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1(1), 011106 (2008).
[Crossref]

M. Ueda, T. Kondou, K. Hayashi, M. Funato, Y. Kawakami, Y. Narukawa, and T. Mukai, “Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets,” Appl. Phys. Lett. 90(17), 171907 (2007).
[Crossref]

Hiramatsu, K.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1-4), 316–326 (2000).
[Crossref]

S. Kitamura, K. Hiramatsu, and N. Sawaki, “Fabrication of GaN hexagonal pyramids on dot-patterned GaN/sapphire substrates via selective metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys. 34(Part 2, No. 9B), L1184–L1186 (1995).
[Crossref]

Honda, T.

S. Ando, T. Honda, and N. Kobayashi, “Self-Limited Facet Growth for GaAs Tetrahedral Quantum Dots,” Jpn. J. Appl. Phys. 32(Part 2, No.1A/B), L104–L106 (1993).
[Crossref]

Hsu, Y. P.

C. M. Tsai, J. K. Sheu, W. C. Lai, Y. P. Hsu, P. T. Wang, C. T. Kuo, C. W. Kuo, S. J. Chang, and Y. K. Su, “Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD,” IEEE Electron Device Lett. 26(7), 464–466 (2005).
[Crossref]

Huang, F. W.

J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, and G. C. Chi, “Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers,” IEEE Electron Device Lett. 32(10), 1400–1402 (2011).
[Crossref]

Hung, W. C.

J. K. Sheu, G. C. Chi, Y. K. Su, C. C. Liu, C. M. Chang, W. C. Hung, and M. J. Jou, “Luminescence of an InGaN/GaN multiple quantum wells light-emitting diode,” Solid-State Electron. 44(6), 1055–1058 (2000).
[Crossref]

Hurni, C. A.

D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, “Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy,” J. Vac. Sci. Technol. A 30(4), 041513 (2012).
[Crossref]

Iyechika, Y.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1-4), 316–326 (2000).
[Crossref]

Jagadamma, L. K.

C. Liu, A. Satka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2(12), 121002 (2009).
[Crossref]

Jetter, M.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Drager, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248(3), 549–560 (2011).
[Crossref]

Ji, Y.

Z. H. Zhang, S. T. Tan, Z. Kyaw, Y. Ji, W. Liu, Z. Ju, N. Hasanov, X. W. Sun, and H. V. Demir, “InGaN/GaN light-emitting diode with a polarization tunnel junction,” Appl. Phys. Lett. 102(19), 193508 (2013).
[Crossref]

Jou, M. J.

J. K. Sheu, G. C. Chi, Y. K. Su, C. C. Liu, C. M. Chang, W. C. Hung, and M. J. Jou, “Luminescence of an InGaN/GaN multiple quantum wells light-emitting diode,” Solid-State Electron. 44(6), 1055–1058 (2000).
[Crossref]

Ju, Z.

Z. H. Zhang, S. T. Tan, Z. Kyaw, Y. Ji, W. Liu, Z. Ju, N. Hasanov, X. W. Sun, and H. V. Demir, “InGaN/GaN light-emitting diode with a polarization tunnel junction,” Appl. Phys. Lett. 102(19), 193508 (2013).
[Crossref]

Jung, D. R.

C. Y. Cho, I. K. Park, M. K. Kwon, J. Y. Kim, S. J. Park, D. R. Jung, and K. W. Kwon, “InGaN/GaN multiple quantum wells grown on microfacets for white-light generation,” Appl. Phys. Lett. 93(24), 241109 (2008).
[Crossref]

Kaiser, U.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Drager, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248(3), 549–560 (2011).
[Crossref]

Kao, C. J.

J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, S. J. Chang, and G. C. Chi, “Characterization of Si implants in p-type GaN,” IEEE J. Sel. Top. Quantum Electron. 8(4A4), 767–772 (2002).
[Crossref]

Kapolnek, D.

D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Anisotropic epitaxial lateral growth in GaN selective area epitaxy,” Appl. Phys. Lett. 71(9), 1204 (1997).
[Crossref]

D. Kapolnek, R. D. Underwood, B. P. Keller, S. Keller, S. P. Denbaars, and U. K. Mishra, “Selective area epitaxy of GaN for electron field emission devices,” J. Cryst. Growth 170(1–4), 340–343 (1997).
[Crossref]

Kawakami, Y.

M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1(1), 011106 (2008).
[Crossref]

M. Ueda, T. Kondou, K. Hayashi, M. Funato, Y. Kawakami, Y. Narukawa, and T. Mukai, “Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets,” Appl. Phys. Lett. 90(17), 171907 (2007).
[Crossref]

Keller, B. P.

D. Kapolnek, R. D. Underwood, B. P. Keller, S. Keller, S. P. Denbaars, and U. K. Mishra, “Selective area epitaxy of GaN for electron field emission devices,” J. Cryst. Growth 170(1–4), 340–343 (1997).
[Crossref]

Keller, S.

D. Kapolnek, R. D. Underwood, B. P. Keller, S. Keller, S. P. Denbaars, and U. K. Mishra, “Selective area epitaxy of GaN for electron field emission devices,” J. Cryst. Growth 170(1–4), 340–343 (1997).
[Crossref]

D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Anisotropic epitaxial lateral growth in GaN selective area epitaxy,” Appl. Phys. Lett. 71(9), 1204 (1997).
[Crossref]

Kent, T. F.

S. Krishnamoorthy, T. F. Kent, J. Yang, P. S. Park, R. C. Myers, and S. Rajan, “GdN Nanoisland-Based GaN Tunnel Junctions,” Nano Lett.13(6), 2570–2575 (2013) (and references therein).
[Crossref] [PubMed]

Kim, J.

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, and Y. Cho, “Highly efficient yellow photoluminescence from {11–22} InGaN multi-quantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97(24), 241111 (2010).
[Crossref]

Kim, J. Y.

C. Y. Cho, I. K. Park, M. K. Kwon, J. Y. Kim, S. J. Park, D. R. Jung, and K. W. Kwon, “InGaN/GaN multiple quantum wells grown on microfacets for white-light generation,” Appl. Phys. Lett. 93(24), 241109 (2008).
[Crossref]

Kim, T.

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, and Y. Cho, “Highly efficient yellow photoluminescence from {11–22} InGaN multi-quantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97(24), 241111 (2010).
[Crossref]

Kitamura, S.

S. Kitamura, K. Hiramatsu, and N. Sawaki, “Fabrication of GaN hexagonal pyramids on dot-patterned GaN/sapphire substrates via selective metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys. 34(Part 2, No. 9B), L1184–L1186 (1995).
[Crossref]

Kobayashi, N.

S. Ando, T. Honda, and N. Kobayashi, “Self-Limited Facet Growth for GaAs Tetrahedral Quantum Dots,” Jpn. J. Appl. Phys. 32(Part 2, No.1A/B), L104–L106 (1993).
[Crossref]

Kondou, T.

M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1(1), 011106 (2008).
[Crossref]

M. Ueda, T. Kondou, K. Hayashi, M. Funato, Y. Kawakami, Y. Narukawa, and T. Mukai, “Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets,” Appl. Phys. Lett. 90(17), 171907 (2007).
[Crossref]

Kou, C. H.

J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, and G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001).
[Crossref]

Kovac, J.

C. Liu, A. Satka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2(12), 121002 (2009).
[Crossref]

Kozodoy, P.

D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Anisotropic epitaxial lateral growth in GaN selective area epitaxy,” Appl. Phys. Lett. 71(9), 1204 (1997).
[Crossref]

Krishnamoorthy, S.

S. Krishnamoorthy, T. F. Kent, J. Yang, P. S. Park, R. C. Myers, and S. Rajan, “GdN Nanoisland-Based GaN Tunnel Junctions,” Nano Lett.13(6), 2570–2575 (2013) (and references therein).
[Crossref] [PubMed]

Kuo, C. H.

S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, and C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum well light-emitting diodes,” Jpn. J. Appl. Phys. 45(4A), 2463–2466 (2006).
[Crossref]

Kuo, C. T.

C. M. Tsai, J. K. Sheu, W. C. Lai, Y. P. Hsu, P. T. Wang, C. T. Kuo, C. W. Kuo, S. J. Chang, and Y. K. Su, “Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD,” IEEE Electron Device Lett. 26(7), 464–466 (2005).
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Kuo, C. W.

C. M. Tsai, J. K. Sheu, W. C. Lai, Y. P. Hsu, P. T. Wang, C. T. Kuo, C. W. Kuo, S. J. Chang, and Y. K. Su, “Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD,” IEEE Electron Device Lett. 26(7), 464–466 (2005).
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Kwon, K. W.

C. Y. Cho, I. K. Park, M. K. Kwon, J. Y. Kim, S. J. Park, D. R. Jung, and K. W. Kwon, “InGaN/GaN multiple quantum wells grown on microfacets for white-light generation,” Appl. Phys. Lett. 93(24), 241109 (2008).
[Crossref]

Kwon, M. K.

C. Y. Cho, I. K. Park, M. K. Kwon, J. Y. Kim, S. J. Park, D. R. Jung, and K. W. Kwon, “InGaN/GaN multiple quantum wells grown on microfacets for white-light generation,” Appl. Phys. Lett. 93(24), 241109 (2008).
[Crossref]

Kyaw, Z.

Z. H. Zhang, S. T. Tan, Z. Kyaw, Y. Ji, W. Liu, Z. Ju, N. Hasanov, X. W. Sun, and H. V. Demir, “InGaN/GaN light-emitting diode with a polarization tunnel junction,” Appl. Phys. Lett. 102(19), 193508 (2013).
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Lai, W. C.

J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, and G. C. Chi, “Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers,” IEEE Electron Device Lett. 32(10), 1400–1402 (2011).
[Crossref]

S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, and C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum well light-emitting diodes,” Jpn. J. Appl. Phys. 45(4A), 2463–2466 (2006).
[Crossref]

C. M. Tsai, J. K. Sheu, W. C. Lai, Y. P. Hsu, P. T. Wang, C. T. Kuo, C. W. Kuo, S. J. Chang, and Y. K. Su, “Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD,” IEEE Electron Device Lett. 26(7), 464–466 (2005).
[Crossref]

J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, and G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001).
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Lang, J. R.

D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, “Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy,” J. Vac. Sci. Technol. A 30(4), 041513 (2012).
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Le Gratiet, L.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, and A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[Crossref]

Lee, M. L.

J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, and G. C. Chi, “Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers,” IEEE Electron Device Lett. 32(10), 1400–1402 (2011).
[Crossref]

S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, and C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum well light-emitting diodes,” Jpn. J. Appl. Phys. 45(4A), 2463–2466 (2006).
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J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, S. J. Chang, and G. C. Chi, “Characterization of Si implants in p-type GaN,” IEEE J. Sel. Top. Quantum Electron. 8(4A4), 767–772 (2002).
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Lee, S.

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, and Y. Cho, “Highly efficient yellow photoluminescence from {11–22} InGaN multi-quantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97(24), 241111 (2010).
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Leute, R. A. R.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Drager, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248(3), 549–560 (2011).
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Li, Y. L.

Y. L. Li, T. Gessmann, E. F. Schubert, and J. K. Sheu, “Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths,” J. Appl. Phys. 94(4), 2167 (2003).
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M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, “Threading dislocation reduction via laterally overgrown nonpolar (11-20) a-plane GaN,” Appl. Phys. Lett. 81(7), 1201 (2002).
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C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu, and I. C. Lin, “Vertical High Quality Mirror-like Facet of GaN-Based Device by Reactive Ion Etching,” Jpn. J. Appl. Phys. 40, 2762 (2001).

Lipski, F.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Drager, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248(3), 549–560 (2011).
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C. Liu, A. Satka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2(12), 121002 (2009).
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J. K. Sheu, G. C. Chi, Y. K. Su, C. C. Liu, C. M. Chang, W. C. Hung, and M. J. Jou, “Luminescence of an InGaN/GaN multiple quantum wells light-emitting diode,” Solid-State Electron. 44(6), 1055–1058 (2000).
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L. Wang, Z. Lu, S. Liu, and Z. C. Feng, “Shallow–meep InGaN multiple-quantum-well System for dual-wavelength emission grown on semipolar facet GaN,” J. Electron. Mater. 40(7), 1572–1577 (2011).
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Liu, W.

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Lu, Z.

L. Wang, Z. Lu, S. Liu, and Z. C. Feng, “Shallow–meep InGaN multiple-quantum-well System for dual-wavelength emission grown on semipolar facet GaN,” J. Electron. Mater. 40(7), 1572–1577 (2011).
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Maeda, T.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1-4), 316–326 (2000).
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Martin, R. W.

C. Liu, A. Satka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2(12), 121002 (2009).
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Martinez, A.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, and A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
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T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Drager, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248(3), 549–560 (2011).
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Michler, P.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Drager, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248(3), 549–560 (2011).
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D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Anisotropic epitaxial lateral growth in GaN selective area epitaxy,” Appl. Phys. Lett. 71(9), 1204 (1997).
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Mizutani, H.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1-4), 316–326 (2000).
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Motogaito, A.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1-4), 316–326 (2000).
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Moudakir, T.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, and A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
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Mukai, T.

M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1(1), 011106 (2008).
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M. Ueda, T. Kondou, K. Hayashi, M. Funato, Y. Kawakami, Y. Narukawa, and T. Mukai, “Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets,” Appl. Phys. Lett. 90(17), 171907 (2007).
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Myers, R. C.

S. Krishnamoorthy, T. F. Kent, J. Yang, P. S. Park, R. C. Myers, and S. Rajan, “GdN Nanoisland-Based GaN Tunnel Junctions,” Nano Lett.13(6), 2570–2575 (2013) (and references therein).
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T. Shioda, M. Sugiyama, Y. Shimogaki, and Y. Nakano, “Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range,” J. Cryst. Growth 311(10), 2809–2812 (2009).
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Narukawa, M.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1-4), 316–326 (2000).
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Narukawa, Y.

M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1(1), 011106 (2008).
[Crossref]

M. Ueda, T. Kondou, K. Hayashi, M. Funato, Y. Kawakami, Y. Narukawa, and T. Mukai, “Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets,” Appl. Phys. Lett. 90(17), 171907 (2007).
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Nishiura, S.

M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1(1), 011106 (2008).
[Crossref]

Nishiyama, K.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1-4), 316–326 (2000).
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Onishi, M.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1-4), 316–326 (2000).
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Orsal, G.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, and A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
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Ougazzaden, A.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, and A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
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Park, I. K.

C. Y. Cho, I. K. Park, M. K. Kwon, J. Y. Kim, S. J. Park, D. R. Jung, and K. W. Kwon, “InGaN/GaN multiple quantum wells grown on microfacets for white-light generation,” Appl. Phys. Lett. 93(24), 241109 (2008).
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Park, J.

J. Park, P. A. Grudowski, C. J. Eiting, and R. D. Dupuis, “Selective-area and lateral epitaxial overgrowth of III–N materials by metal organic chemical vapor deposition,” Appl. Phys. Lett. 73(3), 333 (1998).
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Park, P. S.

S. Krishnamoorthy, T. F. Kent, J. Yang, P. S. Park, R. C. Myers, and S. Rajan, “GdN Nanoisland-Based GaN Tunnel Junctions,” Nano Lett.13(6), 2570–2575 (2013) (and references therein).
[Crossref] [PubMed]

Park, S. J.

C. Y. Cho, I. K. Park, M. K. Kwon, J. Y. Kim, S. J. Park, D. R. Jung, and K. W. Kwon, “InGaN/GaN multiple quantum wells grown on microfacets for white-light generation,” Appl. Phys. Lett. 93(24), 241109 (2008).
[Crossref]

Park, Y.

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, and Y. Cho, “Highly efficient yellow photoluminescence from {11–22} InGaN multi-quantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97(24), 241111 (2010).
[Crossref]

Patriarche, G.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, and A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
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J. Piprek, “Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel junction-cascaded active regions,” Appl. Phys. Lett. 104(5), 051118 (2014).
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Rajan, S.

S. Krishnamoorthy, T. F. Kent, J. Yang, P. S. Park, R. C. Myers, and S. Rajan, “GdN Nanoisland-Based GaN Tunnel Junctions,” Nano Lett.13(6), 2570–2575 (2013) (and references therein).
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Ramdane, A.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, and A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
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Sang, L. W.

H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, and G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103(1), 014908 (2008).
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Satka, A.

C. Liu, A. Satka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2(12), 121002 (2009).
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Sawaki, N.

S. Kitamura, K. Hiramatsu, and N. Sawaki, “Fabrication of GaN hexagonal pyramids on dot-patterned GaN/sapphire substrates via selective metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys. 34(Part 2, No. 9B), L1184–L1186 (1995).
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Schade, L.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Drager, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248(3), 549–560 (2011).
[Crossref]

Scholz, F.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Drager, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248(3), 549–560 (2011).
[Crossref]

Schubert, E. F.

Y. L. Li, T. Gessmann, E. F. Schubert, and J. K. Sheu, “Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths,” J. Appl. Phys. 94(4), 2167 (2003).
[Crossref]

Schwaiger, S.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Drager, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248(3), 549–560 (2011).
[Crossref]

Schwarz, U. T.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Drager, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248(3), 549–560 (2011).
[Crossref]

Shei, S. C.

S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, and C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum well light-emitting diodes,” Jpn. J. Appl. Phys. 45(4A), 2463–2466 (2006).
[Crossref]

J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, and G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001).
[Crossref]

Sheu, J. K.

J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, and G. C. Chi, “Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers,” IEEE Electron Device Lett. 32(10), 1400–1402 (2011).
[Crossref]

S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, and C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum well light-emitting diodes,” Jpn. J. Appl. Phys. 45(4A), 2463–2466 (2006).
[Crossref]

C. M. Tsai, J. K. Sheu, W. C. Lai, Y. P. Hsu, P. T. Wang, C. T. Kuo, C. W. Kuo, S. J. Chang, and Y. K. Su, “Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD,” IEEE Electron Device Lett. 26(7), 464–466 (2005).
[Crossref]

Y. L. Li, T. Gessmann, E. F. Schubert, and J. K. Sheu, “Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths,” J. Appl. Phys. 94(4), 2167 (2003).
[Crossref]

J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, S. J. Chang, and G. C. Chi, “Characterization of Si implants in p-type GaN,” IEEE J. Sel. Top. Quantum Electron. 8(4A4), 767–772 (2002).
[Crossref]

J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, and G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001).
[Crossref]

C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu, and I. C. Lin, “Vertical High Quality Mirror-like Facet of GaN-Based Device by Reactive Ion Etching,” Jpn. J. Appl. Phys. 40, 2762 (2001).

J. K. Sheu, G. C. Chi, Y. K. Su, C. C. Liu, C. M. Chang, W. C. Hung, and M. J. Jou, “Luminescence of an InGaN/GaN multiple quantum wells light-emitting diode,” Solid-State Electron. 44(6), 1055–1058 (2000).
[Crossref]

Shields, P.

C. Liu, A. Satka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2(12), 121002 (2009).
[Crossref]

Shih, I.

J. E. Greenspan, C. Blaauw, B. Emmerstorfer, R. W. Glew, and I. Shih, “Analysis of a time-dependent supply mechanism in selective area growth by MOCVD,” J. Cryst. Growth 248, 405–410 (2003).
[Crossref]

Shimogaki, Y.

T. Shioda, M. Sugiyama, Y. Shimogaki, and Y. Nakano, “Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range,” J. Cryst. Growth 311(10), 2809–2812 (2009).
[Crossref]

Shioda, T.

T. Shioda, M. Sugiyama, Y. Shimogaki, and Y. Nakano, “Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range,” J. Cryst. Growth 311(10), 2809–2812 (2009).
[Crossref]

Sirenko, A. A.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, and A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[Crossref]

Soltani, A.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, and A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[Crossref]

Speck, J. S.

D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, “Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy,” J. Vac. Sci. Technol. A 30(4), 041513 (2012).
[Crossref]

M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, “Threading dislocation reduction via laterally overgrown nonpolar (11-20) a-plane GaN,” Appl. Phys. Lett. 81(7), 1201 (2002).
[Crossref]

Su, Y. K.

C. M. Tsai, J. K. Sheu, W. C. Lai, Y. P. Hsu, P. T. Wang, C. T. Kuo, C. W. Kuo, S. J. Chang, and Y. K. Su, “Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD,” IEEE Electron Device Lett. 26(7), 464–466 (2005).
[Crossref]

J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, and G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001).
[Crossref]

C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu, and I. C. Lin, “Vertical High Quality Mirror-like Facet of GaN-Based Device by Reactive Ion Etching,” Jpn. J. Appl. Phys. 40, 2762 (2001).

J. K. Sheu, G. C. Chi, Y. K. Su, C. C. Liu, C. M. Chang, W. C. Hung, and M. J. Jou, “Luminescence of an InGaN/GaN multiple quantum wells light-emitting diode,” Solid-State Electron. 44(6), 1055–1058 (2000).
[Crossref]

Sugiyama, M.

T. Shioda, M. Sugiyama, Y. Shimogaki, and Y. Nakano, “Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range,” J. Cryst. Growth 311(10), 2809–2812 (2009).
[Crossref]

Sun, X. W.

Z. H. Zhang, S. T. Tan, Z. Kyaw, Y. Ji, W. Liu, Z. Ju, N. Hasanov, X. W. Sun, and H. V. Demir, “InGaN/GaN light-emitting diode with a polarization tunnel junction,” Appl. Phys. Lett. 102(19), 193508 (2013).
[Crossref]

Tan, S. T.

Z. H. Zhang, S. T. Tan, Z. Kyaw, Y. Ji, W. Liu, Z. Ju, N. Hasanov, X. W. Sun, and H. V. Demir, “InGaN/GaN light-emitting diode with a polarization tunnel junction,” Appl. Phys. Lett. 102(19), 193508 (2013).
[Crossref]

Thonke, K.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Drager, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248(3), 549–560 (2011).
[Crossref]

Troadec, D.

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, and A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[Crossref]

Tsai, C. M.

S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, and C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum well light-emitting diodes,” Jpn. J. Appl. Phys. 45(4A), 2463–2466 (2006).
[Crossref]

C. M. Tsai, J. K. Sheu, W. C. Lai, Y. P. Hsu, P. T. Wang, C. T. Kuo, C. W. Kuo, S. J. Chang, and Y. K. Su, “Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD,” IEEE Electron Device Lett. 26(7), 464–466 (2005).
[Crossref]

Tsai, J. M.

J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, and G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001).
[Crossref]

Tu, S. J.

J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, and G. C. Chi, “Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers,” IEEE Electron Device Lett. 32(10), 1400–1402 (2011).
[Crossref]

Tun, C. J.

J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, S. J. Chang, and G. C. Chi, “Characterization of Si implants in p-type GaN,” IEEE J. Sel. Top. Quantum Electron. 8(4A4), 767–772 (2002).
[Crossref]

Ueda, M.

M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1(1), 011106 (2008).
[Crossref]

M. Ueda, T. Kondou, K. Hayashi, M. Funato, Y. Kawakami, Y. Narukawa, and T. Mukai, “Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets,” Appl. Phys. Lett. 90(17), 171907 (2007).
[Crossref]

Uherek, F.

C. Liu, A. Satka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2(12), 121002 (2009).
[Crossref]

Underwood, R. D.

D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Anisotropic epitaxial lateral growth in GaN selective area epitaxy,” Appl. Phys. Lett. 71(9), 1204 (1997).
[Crossref]

D. Kapolnek, R. D. Underwood, B. P. Keller, S. Keller, S. P. Denbaars, and U. K. Mishra, “Selective area epitaxy of GaN for electron field emission devices,” J. Cryst. Growth 170(1–4), 340–343 (1997).
[Crossref]

Vetury, R.

D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Anisotropic epitaxial lateral growth in GaN selective area epitaxy,” Appl. Phys. Lett. 71(9), 1204 (1997).
[Crossref]

Vierheilig, C.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Drager, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248(3), 549–560 (2011).
[Crossref]

Wang, J.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Drager, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248(3), 549–560 (2011).
[Crossref]

Wang, L.

L. Wang, Z. Lu, S. Liu, and Z. C. Feng, “Shallow–meep InGaN multiple-quantum-well System for dual-wavelength emission grown on semipolar facet GaN,” J. Electron. Mater. 40(7), 1572–1577 (2011).
[Crossref]

Wang, P. T.

C. M. Tsai, J. K. Sheu, W. C. Lai, Y. P. Hsu, P. T. Wang, C. T. Kuo, C. W. Kuo, S. J. Chang, and Y. K. Su, “Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD,” IEEE Electron Device Lett. 26(7), 464–466 (2005).
[Crossref]

Wang, W.

C. Liu, A. Satka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2(12), 121002 (2009).
[Crossref]

Wang, Y.

H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, and G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103(1), 014908 (2008).
[Crossref]

Wen, T. C.

J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, and G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001).
[Crossref]

Wu, F.

M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, “Threading dislocation reduction via laterally overgrown nonpolar (11-20) a-plane GaN,” Appl. Phys. Lett. 81(7), 1201 (2002).
[Crossref]

Wunderer, T.

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Drager, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248(3), 549–560 (2011).
[Crossref]

Yang, C. C.

J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, and G. C. Chi, “Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers,” IEEE Electron Device Lett. 32(10), 1400–1402 (2011).
[Crossref]

Yang, J.

S. Krishnamoorthy, T. F. Kent, J. Yang, P. S. Park, R. C. Myers, and S. Rajan, “GdN Nanoisland-Based GaN Tunnel Junctions,” Nano Lett.13(6), 2570–2575 (2013) (and references therein).
[Crossref] [PubMed]

Yang, M. S.

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, and Y. Cho, “Highly efficient yellow photoluminescence from {11–22} InGaN multi-quantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97(24), 241111 (2010).
[Crossref]

Yang, Z. J.

H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, and G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103(1), 014908 (2008).
[Crossref]

Yeh, L. S.

J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, S. J. Chang, and G. C. Chi, “Characterization of Si implants in p-type GaN,” IEEE J. Sel. Top. Quantum Electron. 8(4A4), 767–772 (2002).
[Crossref]

Yeh, Y. H.

J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, and G. C. Chi, “Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers,” IEEE Electron Device Lett. 32(10), 1400–1402 (2011).
[Crossref]

Young, E. C.

D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, “Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy,” J. Vac. Sci. Technol. A 30(4), 041513 (2012).
[Crossref]

Yu, T. J.

H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, and G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103(1), 014908 (2008).
[Crossref]

Zhang, G. Y.

H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, and G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103(1), 014908 (2008).
[Crossref]

Zhang, Z. H.

Z. H. Zhang, S. T. Tan, Z. Kyaw, Y. Ji, W. Liu, Z. Ju, N. Hasanov, X. W. Sun, and H. V. Demir, “InGaN/GaN light-emitting diode with a polarization tunnel junction,” Appl. Phys. Lett. 102(19), 193508 (2013).
[Crossref]

Zhao, L. B.

H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, and G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103(1), 014908 (2008).
[Crossref]

Appl. Phys. Express (2)

C. Liu, A. Satka, L. K. Jagadamma, P. R. Edwards, D. Allsopp, R. W. Martin, P. Shields, J. Kovac, F. Uherek, and W. Wang, “Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting,” Appl. Phys. Express 2(12), 121002 (2009).
[Crossref]

M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai, “Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting,” Appl. Phys. Express 1(1), 011106 (2008).
[Crossref]

Appl. Phys. Lett. (9)

C. Y. Cho, I. K. Park, M. K. Kwon, J. Y. Kim, S. J. Park, D. R. Jung, and K. W. Kwon, “InGaN/GaN multiple quantum wells grown on microfacets for white-light generation,” Appl. Phys. Lett. 93(24), 241109 (2008).
[Crossref]

B. Beaumont, S. Haffouz, and P. Gibart, “Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy,” Appl. Phys. Lett. 72(8), 921 (1998).
[Crossref]

T. Kim, J. Kim, M. S. Yang, S. Lee, Y. Park, U. I. Chung, and Y. Cho, “Highly efficient yellow photoluminescence from {11–22} InGaN multi-quantum-well grown on nanoscale pyramid structure,” Appl. Phys. Lett. 97(24), 241111 (2010).
[Crossref]

M. Ueda, T. Kondou, K. Hayashi, M. Funato, Y. Kawakami, Y. Narukawa, and T. Mukai, “Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets,” Appl. Phys. Lett. 90(17), 171907 (2007).
[Crossref]

J. Piprek, “Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel junction-cascaded active regions,” Appl. Phys. Lett. 104(5), 051118 (2014).
[Crossref]

Z. H. Zhang, S. T. Tan, Z. Kyaw, Y. Ji, W. Liu, Z. Ju, N. Hasanov, X. W. Sun, and H. V. Demir, “InGaN/GaN light-emitting diode with a polarization tunnel junction,” Appl. Phys. Lett. 102(19), 193508 (2013).
[Crossref]

D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, “Anisotropic epitaxial lateral growth in GaN selective area epitaxy,” Appl. Phys. Lett. 71(9), 1204 (1997).
[Crossref]

J. Park, P. A. Grudowski, C. J. Eiting, and R. D. Dupuis, “Selective-area and lateral epitaxial overgrowth of III–N materials by metal organic chemical vapor deposition,” Appl. Phys. Lett. 73(3), 333 (1998).
[Crossref]

M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, “Threading dislocation reduction via laterally overgrown nonpolar (11-20) a-plane GaN,” Appl. Phys. Lett. 81(7), 1201 (2002).
[Crossref]

IEEE Electron Device Lett. (3)

J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, and G. C. Chi, “Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers,” IEEE Electron Device Lett. 32(10), 1400–1402 (2011).
[Crossref]

J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang, and G. C. Chi, “Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer,” IEEE Electron Device Lett. 22(10), 460–462 (2001).
[Crossref]

C. M. Tsai, J. K. Sheu, W. C. Lai, Y. P. Hsu, P. T. Wang, C. T. Kuo, C. W. Kuo, S. J. Chang, and Y. K. Su, “Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD,” IEEE Electron Device Lett. 26(7), 464–466 (2005).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, S. J. Chang, and G. C. Chi, “Characterization of Si implants in p-type GaN,” IEEE J. Sel. Top. Quantum Electron. 8(4A4), 767–772 (2002).
[Crossref]

J. Appl. Phys. (2)

H. Fang, Z. J. Yang, Y. Wang, T. Dai, L. W. Sang, L. B. Zhao, T. J. Yu, and G. Y. Zhang, “Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition,” J. Appl. Phys. 103(1), 014908 (2008).
[Crossref]

Y. L. Li, T. Gessmann, E. F. Schubert, and J. K. Sheu, “Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths,” J. Appl. Phys. 94(4), 2167 (2003).
[Crossref]

J. Cryst. Growth (5)

J. E. Greenspan, C. Blaauw, B. Emmerstorfer, R. W. Glew, and I. Shih, “Analysis of a time-dependent supply mechanism in selective area growth by MOCVD,” J. Cryst. Growth 248, 405–410 (2003).
[Crossref]

T. Shioda, M. Sugiyama, Y. Shimogaki, and Y. Nakano, “Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range,” J. Cryst. Growth 311(10), 2809–2812 (2009).
[Crossref]

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A. A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, and A. Ougazzaden, “Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth,” J. Cryst. Growth 315(1), 160–163 (2011).
[Crossref]

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1-4), 316–326 (2000).
[Crossref]

D. Kapolnek, R. D. Underwood, B. P. Keller, S. Keller, S. P. Denbaars, and U. K. Mishra, “Selective area epitaxy of GaN for electron field emission devices,” J. Cryst. Growth 170(1–4), 340–343 (1997).
[Crossref]

J. Electron. Mater. (1)

L. Wang, Z. Lu, S. Liu, and Z. C. Feng, “Shallow–meep InGaN multiple-quantum-well System for dual-wavelength emission grown on semipolar facet GaN,” J. Electron. Mater. 40(7), 1572–1577 (2011).
[Crossref]

J. Vac. Sci. Technol. A (1)

D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, “Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy,” J. Vac. Sci. Technol. A 30(4), 041513 (2012).
[Crossref]

Jpn. J. Appl. Phys. (4)

C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu, and I. C. Lin, “Vertical High Quality Mirror-like Facet of GaN-Based Device by Reactive Ion Etching,” Jpn. J. Appl. Phys. 40, 2762 (2001).

S. Kitamura, K. Hiramatsu, and N. Sawaki, “Fabrication of GaN hexagonal pyramids on dot-patterned GaN/sapphire substrates via selective metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys. 34(Part 2, No. 9B), L1184–L1186 (1995).
[Crossref]

S. Ando, T. Honda, and N. Kobayashi, “Self-Limited Facet Growth for GaAs Tetrahedral Quantum Dots,” Jpn. J. Appl. Phys. 32(Part 2, No.1A/B), L104–L106 (1993).
[Crossref]

S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, and C. H. Kuo, “Emission mechanism of mixed-color InGaN/GaN multi-quantum well light-emitting diodes,” Jpn. J. Appl. Phys. 45(4A), 2463–2466 (2006).
[Crossref]

Phys. Status Solidi B (1)

T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Drager, A. Hangleiter, and F. Scholz, “Three-dimensional GaN for semipolar light emitters,” Phys. Status Solidi B 248(3), 549–560 (2011).
[Crossref]

Solid-State Electron. (1)

J. K. Sheu, G. C. Chi, Y. K. Su, C. C. Liu, C. M. Chang, W. C. Hung, and M. J. Jou, “Luminescence of an InGaN/GaN multiple quantum wells light-emitting diode,” Solid-State Electron. 44(6), 1055–1058 (2000).
[Crossref]

Other (1)

S. Krishnamoorthy, T. F. Kent, J. Yang, P. S. Park, R. C. Myers, and S. Rajan, “GdN Nanoisland-Based GaN Tunnel Junctions,” Nano Lett.13(6), 2570–2575 (2013) (and references therein).
[Crossref] [PubMed]

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Figures (7)

Fig. 1
Fig. 1 Schematic illustrations of (a) n-GaN grown on sapphire substrate (b)Al mask and SiO2 ion-stopping layers n-GaN/sapphire template(c)selective-area Si implantation into the n-GaN layer (d) Si-implanted GaN/sapphire template (e)LED epitaxial structure with truncated hexagonal pyramid array.
Fig. 2
Fig. 2 Typical SEM images of (a) an n-GaN layer regrown on the SIG template (b) a cross-section-view TEM image taken from the boundary between the regrown GaN layer and the Si-implanted GaN surface(c) LED structure including n-GaN, InGaN/GaN MQW and p-GaN layers grown on the SIG template.
Fig. 3
Fig. 3 Typical cross-sectional TEM images taken (a) between two THPs near the valley in the [ 11 2 ¯ 0 ] direction (b) inspection at the bottom of V-shaped depression (c) inspection at top surface of THP (d) inspection at the intersection between the semipolar and top facets.
Fig. 4
Fig. 4 (a)Typical photographs taken from the LED wafer with THP array under different current injection (b) typical EL spectra taken from the reference LED wafer under different current injection. The inset shows the photograph of reference LED wafer driven at current of 100 mA
Fig. 5
Fig. 5 (a) schematic layer structure of LED chip with the THP arrays (b) typical current-voltage (I-V) characteristic measured from the LED chip with the THP arrays.
Fig. 6
Fig. 6 (a)Typical photographs taken from the LED chip with different driving currents (b) EL spectra taken from the LED chip with driving currents from 3 to 20 mA(c) EL spectra taken from the LED chip with driving currents from 25 to 100 mA.
Fig. 7
Fig. 7 Typical CIE color coordinates taken from the LEDs driven with different currents.

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