Abstract

We demonstrate indium gallium nitride/gallium nitride/aluminum nitride (AlN/GaN/InGaN) multi-quantum-well (MQW) ultraviolet (UV) light-emitting diodes (LEDs) to improve light output power. Similar to conventional UV LEDs with AlGaN/InGaN MQWs, UV LEDs with AlN/GaN/InGaN MQWs have forward voltages (Vf’s) ranging from 3.21 V to 3.29 V at 350 mA. Each emission peak wavelength of AlN/GaN/InGaN MQW UV LEDs presents 350 mA output power greater than that of the corresponding emission peak wavelength of AlGaN/InGaN MQW UV LEDs. The light output power at 350mA of AlN/GaN/InGaN MQWs UV LEDs with 375 nm emission wavelength can reach around 26.7% light output power enhancement in magnitude compared to the AlGaN/InGaN MQWs UV LEDs with same emission wavelength. But 350mA light output power of AlN/GaN/InGaN MQWs UV LEDs with emission wavelength of 395nm could only have light output power enhancement of 2.43% in magnitude compared with the same emission wavelength AlGaN/InGaN MQWs UV LEDs. Moreover, AlN/GaN/InGaN MQWs present better InGaN thickness uniformity, well/barrier interface quality and less large size pits than AlGaN/InGaN MQWs, causing AlN/GaN/InGaN MQW UV LEDs to have less reverse leakage currents at −20 V. Furthermore, AlN/GaN/InGaN MQW UV LEDs have the 2-kV human body mode (HBM) electrostatic discharge (ESD) pass yield of 85%, which is 15% more than the 2-kV HBM ESD pass yield of AlGaN/InGaN MQW UV LEDs of 70%.

© 2015 Optical Society of America

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  1. Y. Narukawa, J. Narita, T. Sakamoto, K. Deguchi, T. Yamada, and T. Mukai, “Ultra-high efficiency white light emitting diodes,” Jpn. J. Appl. Phys. 45(41), L1084–L1086 (2006).
    [Crossref]
  2. S. D. Lester, F. A. Ponce, M. G. Craford, and D. A. Steigerwald, “High Dislocation Densities in High-Efficiency Gan-Based Light-Emitting-Diodes,” Appl. Phys. Lett. 66(10), 1249–1251 (1995).
    [Crossref]
  3. T. Wang, Y. H. Liu, Y. B. Lee, Y. Izumi, J. P. Ao, J. Bai, H. D. Li, and S. Sakai, “Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes,” J. Cryst. Growth 235(1-4), 177–182 (2002).
    [Crossref]
  4. D. D. Koleske, A. J. Fischer, A. A. Allerman, C. C. Mitchell, K. C. Cross, S. R. Kurtz, J. J. Figiel, K. W. Fullmer, and W. G. Breiland, “Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence,” Appl. Phys. Lett. 81(11), 1940–1942 (2002).
    [Crossref]
  5. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Luminescences from localized states in InGaN epilayers,” Appl. Phys. Lett. 70(21), 2822–2825 (1997).
    [Crossref]
  6. P. R. C. Kent and A. Zunger, “Carrier localization and the origin of luminescence in cubic InGaN alloys,” Appl. Phys. Lett. 79(13), 1977–1979 (2001).
    [Crossref]
  7. M.-K. Kwon, I.-K. Park, S.-H. Beak, J.-Y. Kim, and S. J. Park, “Si delta doping in a GaN barrier layer of InGaN/GaN multi-quantum-well for an efficient ultraviolet light-emitting diode,” J. Appl. Phys. 97(10), 106–109 (2005).
  8. A. Knauer, V. Kueller, S. Einfeldt, V. Hoffmann, T. Kolbe, J.-R. van Look, J. Piprek, M. Weyers, and M. Kneissl, “Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diodes,” Proc. SPIE 6797, 67970X (2007).
    [Crossref]
  9. M. Asif Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, and A. Bykhovsky, “Piezoelectric doping in AlInGaN/GaN heterostructures,” Appl. Phys. Lett. 75(18), 2806 (1999).
    [Crossref]
  10. M. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
    [Crossref]
  11. J. Li, S. L. Shi, Y. J. Wang, S. J. Xu, D. G. Zhao, J. J. Zhu, H. Yang, and F. Lu, “Violet electroluminescence of AlInGaN–InGaN Multiquantum-well light-emitting diodes: quantum-confined Stark effect and heating effect,” IEEE Photon. Technol. Lett. 19(10), 789–791 (2007).
  12. M. Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, H.-C. zur Loye, G. Tamulaitis, A. Zukauskas, D. J. Smith, D. Chandrasekhar, and R. Bicknell-Tassius, “Lattice and energy band engineering in AlInGaN/GaN heterostructures,” Appl. Phys. Lett. 76(9), 1161 (2000).
    [Crossref]
  13. Z.-H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
    [Crossref]
  14. R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
    [Crossref]
  15. Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
    [Crossref]
  16. Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, X. W. Sun, Y. Zhao, S. P. DenBaars, S. Nakamura, and H. V. Demir, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
    [Crossref]
  17. L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-Doping on the Characteristics of InGaN–GaN Multiple Quantum-Well Blue Light Emitting Diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
    [Crossref]
  18. Z.-H. Zhang, S. T. Tan, Y. Ji, W. Liu, Z. Ju, Z. Kyaw, X. W. Sun, and H. V. Demir, “A PN-type quantum barrier for InGaN/GaN light emitting diodes,” Opt. Express 21(13), 15676–15685 (2013).
    [Crossref] [PubMed]
  19. K. Anazawa, S. Hassanet, K. Fujii, Y. Nakano, and M. Sugiyama, “Growth of strain-compensated InGaN/AlN multiple quantum wells on GaN by MOVPE,” J. Cryst. Growth 370, 82–86 (2013).
    [Crossref]
  20. H. Z. Ronald A Arif, Y.-K. Ee, and N. Tansu, “Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes,” IEEE J. Quantum Electron. 44(6), 573–580 (2008).
    [Crossref]
  21. M. Meneghini, A. Tazzoli, G. Mura, G. Meneghesso, and E. Zanoni, “A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs,” IEEE Trans. Electron. Dev. 57(1), 108–118 (2010).
    [Crossref]
  22. S. Tomiya, T. Hino, S. Goto, M. Takeya, and M. Ikeda, “Dislocation related issues in the degradation of GaN-based laser diodes,” IEEE J. Sel. Top. Quantum Electron. 10(6), 1277–1286 (2004).
    [Crossref]
  23. S. N. Lee, H. S. Paek, J. K. Son, H. Kim, K. K. Kim, K. H. Ha, O. H. Nam, and Y. Park, “Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices,” J. Electroceram. 23(2-4), 406–409 (2009).
    [Crossref]

2014 (2)

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, X. W. Sun, Y. Zhao, S. P. DenBaars, S. Nakamura, and H. V. Demir, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]

2013 (3)

Z.-H. Zhang, S. T. Tan, Y. Ji, W. Liu, Z. Ju, Z. Kyaw, X. W. Sun, and H. V. Demir, “A PN-type quantum barrier for InGaN/GaN light emitting diodes,” Opt. Express 21(13), 15676–15685 (2013).
[Crossref] [PubMed]

K. Anazawa, S. Hassanet, K. Fujii, Y. Nakano, and M. Sugiyama, “Growth of strain-compensated InGaN/AlN multiple quantum wells on GaN by MOVPE,” J. Cryst. Growth 370, 82–86 (2013).
[Crossref]

Z.-H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

2010 (2)

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

M. Meneghini, A. Tazzoli, G. Mura, G. Meneghesso, and E. Zanoni, “A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs,” IEEE Trans. Electron. Dev. 57(1), 108–118 (2010).
[Crossref]

2009 (1)

S. N. Lee, H. S. Paek, J. K. Son, H. Kim, K. K. Kim, K. H. Ha, O. H. Nam, and Y. Park, “Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices,” J. Electroceram. 23(2-4), 406–409 (2009).
[Crossref]

2008 (1)

H. Z. Ronald A Arif, Y.-K. Ee, and N. Tansu, “Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes,” IEEE J. Quantum Electron. 44(6), 573–580 (2008).
[Crossref]

2007 (3)

M. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

J. Li, S. L. Shi, Y. J. Wang, S. J. Xu, D. G. Zhao, J. J. Zhu, H. Yang, and F. Lu, “Violet electroluminescence of AlInGaN–InGaN Multiquantum-well light-emitting diodes: quantum-confined Stark effect and heating effect,” IEEE Photon. Technol. Lett. 19(10), 789–791 (2007).

A. Knauer, V. Kueller, S. Einfeldt, V. Hoffmann, T. Kolbe, J.-R. van Look, J. Piprek, M. Weyers, and M. Kneissl, “Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diodes,” Proc. SPIE 6797, 67970X (2007).
[Crossref]

2006 (1)

Y. Narukawa, J. Narita, T. Sakamoto, K. Deguchi, T. Yamada, and T. Mukai, “Ultra-high efficiency white light emitting diodes,” Jpn. J. Appl. Phys. 45(41), L1084–L1086 (2006).
[Crossref]

2005 (1)

M.-K. Kwon, I.-K. Park, S.-H. Beak, J.-Y. Kim, and S. J. Park, “Si delta doping in a GaN barrier layer of InGaN/GaN multi-quantum-well for an efficient ultraviolet light-emitting diode,” J. Appl. Phys. 97(10), 106–109 (2005).

2004 (1)

S. Tomiya, T. Hino, S. Goto, M. Takeya, and M. Ikeda, “Dislocation related issues in the degradation of GaN-based laser diodes,” IEEE J. Sel. Top. Quantum Electron. 10(6), 1277–1286 (2004).
[Crossref]

2002 (3)

T. Wang, Y. H. Liu, Y. B. Lee, Y. Izumi, J. P. Ao, J. Bai, H. D. Li, and S. Sakai, “Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes,” J. Cryst. Growth 235(1-4), 177–182 (2002).
[Crossref]

D. D. Koleske, A. J. Fischer, A. A. Allerman, C. C. Mitchell, K. C. Cross, S. R. Kurtz, J. J. Figiel, K. W. Fullmer, and W. G. Breiland, “Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence,” Appl. Phys. Lett. 81(11), 1940–1942 (2002).
[Crossref]

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-Doping on the Characteristics of InGaN–GaN Multiple Quantum-Well Blue Light Emitting Diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

2001 (1)

P. R. C. Kent and A. Zunger, “Carrier localization and the origin of luminescence in cubic InGaN alloys,” Appl. Phys. Lett. 79(13), 1977–1979 (2001).
[Crossref]

2000 (1)

M. Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, H.-C. zur Loye, G. Tamulaitis, A. Zukauskas, D. J. Smith, D. Chandrasekhar, and R. Bicknell-Tassius, “Lattice and energy band engineering in AlInGaN/GaN heterostructures,” Appl. Phys. Lett. 76(9), 1161 (2000).
[Crossref]

1999 (1)

M. Asif Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, and A. Bykhovsky, “Piezoelectric doping in AlInGaN/GaN heterostructures,” Appl. Phys. Lett. 75(18), 2806 (1999).
[Crossref]

1997 (1)

S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Luminescences from localized states in InGaN epilayers,” Appl. Phys. Lett. 70(21), 2822–2825 (1997).
[Crossref]

1995 (1)

S. D. Lester, F. A. Ponce, M. G. Craford, and D. A. Steigerwald, “High Dislocation Densities in High-Efficiency Gan-Based Light-Emitting-Diodes,” Appl. Phys. Lett. 66(10), 1249–1251 (1995).
[Crossref]

Allerman, A. A.

D. D. Koleske, A. J. Fischer, A. A. Allerman, C. C. Mitchell, K. C. Cross, S. R. Kurtz, J. J. Figiel, K. W. Fullmer, and W. G. Breiland, “Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence,” Appl. Phys. Lett. 81(11), 1940–1942 (2002).
[Crossref]

Anazawa, K.

K. Anazawa, S. Hassanet, K. Fujii, Y. Nakano, and M. Sugiyama, “Growth of strain-compensated InGaN/AlN multiple quantum wells on GaN by MOVPE,” J. Cryst. Growth 370, 82–86 (2013).
[Crossref]

Ao, J. P.

T. Wang, Y. H. Liu, Y. B. Lee, Y. Izumi, J. P. Ao, J. Bai, H. D. Li, and S. Sakai, “Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes,” J. Cryst. Growth 235(1-4), 177–182 (2002).
[Crossref]

Asif Khan, M.

M. Asif Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, and A. Bykhovsky, “Piezoelectric doping in AlInGaN/GaN heterostructures,” Appl. Phys. Lett. 75(18), 2806 (1999).
[Crossref]

Azuhata, T.

S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Luminescences from localized states in InGaN epilayers,” Appl. Phys. Lett. 70(21), 2822–2825 (1997).
[Crossref]

Bai, J.

T. Wang, Y. H. Liu, Y. B. Lee, Y. Izumi, J. P. Ao, J. Bai, H. D. Li, and S. Sakai, “Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes,” J. Cryst. Growth 235(1-4), 177–182 (2002).
[Crossref]

Beak, S.-H.

M.-K. Kwon, I.-K. Park, S.-H. Beak, J.-Y. Kim, and S. J. Park, “Si delta doping in a GaN barrier layer of InGaN/GaN multi-quantum-well for an efficient ultraviolet light-emitting diode,” J. Appl. Phys. 97(10), 106–109 (2005).

Bicknell-Tassius, R.

M. Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, H.-C. zur Loye, G. Tamulaitis, A. Zukauskas, D. J. Smith, D. Chandrasekhar, and R. Bicknell-Tassius, “Lattice and energy band engineering in AlInGaN/GaN heterostructures,” Appl. Phys. Lett. 76(9), 1161 (2000).
[Crossref]

Breiland, W. G.

D. D. Koleske, A. J. Fischer, A. A. Allerman, C. C. Mitchell, K. C. Cross, S. R. Kurtz, J. J. Figiel, K. W. Fullmer, and W. G. Breiland, “Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence,” Appl. Phys. Lett. 81(11), 1940–1942 (2002).
[Crossref]

Bykhovsky, A.

M. Asif Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, and A. Bykhovsky, “Piezoelectric doping in AlInGaN/GaN heterostructures,” Appl. Phys. Lett. 75(18), 2806 (1999).
[Crossref]

Chandrasekhar, D.

M. Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, H.-C. zur Loye, G. Tamulaitis, A. Zukauskas, D. J. Smith, D. Chandrasekhar, and R. Bicknell-Tassius, “Lattice and energy band engineering in AlInGaN/GaN heterostructures,” Appl. Phys. Lett. 76(9), 1161 (2000).
[Crossref]

Chang, S. J.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-Doping on the Characteristics of InGaN–GaN Multiple Quantum-Well Blue Light Emitting Diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Chen, C. H.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-Doping on the Characteristics of InGaN–GaN Multiple Quantum-Well Blue Light Emitting Diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Chen, J. F.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-Doping on the Characteristics of InGaN–GaN Multiple Quantum-Well Blue Light Emitting Diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Chen, R.

Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, X. W. Sun, Y. Zhao, S. P. DenBaars, S. Nakamura, and H. V. Demir, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]

Chichibu, S.

S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Luminescences from localized states in InGaN epilayers,” Appl. Phys. Lett. 70(21), 2822–2825 (1997).
[Crossref]

Craford, M. G.

S. D. Lester, F. A. Ponce, M. G. Craford, and D. A. Steigerwald, “High Dislocation Densities in High-Efficiency Gan-Based Light-Emitting-Diodes,” Appl. Phys. Lett. 66(10), 1249–1251 (1995).
[Crossref]

Cross, K. C.

D. D. Koleske, A. J. Fischer, A. A. Allerman, C. C. Mitchell, K. C. Cross, S. R. Kurtz, J. J. Figiel, K. W. Fullmer, and W. G. Breiland, “Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence,” Appl. Phys. Lett. 81(11), 1940–1942 (2002).
[Crossref]

Dai, Q.

M. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

Deguchi, K.

Y. Narukawa, J. Narita, T. Sakamoto, K. Deguchi, T. Yamada, and T. Mukai, “Ultra-high efficiency white light emitting diodes,” Jpn. J. Appl. Phys. 45(41), L1084–L1086 (2006).
[Crossref]

Demir, H. V.

Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, X. W. Sun, Y. Zhao, S. P. DenBaars, S. Nakamura, and H. V. Demir, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z.-H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Z.-H. Zhang, S. T. Tan, Y. Ji, W. Liu, Z. Ju, Z. Kyaw, X. W. Sun, and H. V. Demir, “A PN-type quantum barrier for InGaN/GaN light emitting diodes,” Opt. Express 21(13), 15676–15685 (2013).
[Crossref] [PubMed]

DenBaars, S. P.

Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, X. W. Sun, Y. Zhao, S. P. DenBaars, S. Nakamura, and H. V. Demir, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

Dikme, Y.

Z.-H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Ee, Y.-K.

H. Z. Ronald A Arif, Y.-K. Ee, and N. Tansu, “Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes,” IEEE J. Quantum Electron. 44(6), 573–580 (2008).
[Crossref]

Einfeldt, S.

A. Knauer, V. Kueller, S. Einfeldt, V. Hoffmann, T. Kolbe, J.-R. van Look, J. Piprek, M. Weyers, and M. Kneissl, “Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diodes,” Proc. SPIE 6797, 67970X (2007).
[Crossref]

Erdem, T.

Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, X. W. Sun, Y. Zhao, S. P. DenBaars, S. Nakamura, and H. V. Demir, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]

Farrell, R. M.

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

Figiel, J. J.

D. D. Koleske, A. J. Fischer, A. A. Allerman, C. C. Mitchell, K. C. Cross, S. R. Kurtz, J. J. Figiel, K. W. Fullmer, and W. G. Breiland, “Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence,” Appl. Phys. Lett. 81(11), 1940–1942 (2002).
[Crossref]

Fischer, A. J.

D. D. Koleske, A. J. Fischer, A. A. Allerman, C. C. Mitchell, K. C. Cross, S. R. Kurtz, J. J. Figiel, K. W. Fullmer, and W. G. Breiland, “Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence,” Appl. Phys. Lett. 81(11), 1940–1942 (2002).
[Crossref]

Fujii, K.

K. Anazawa, S. Hassanet, K. Fujii, Y. Nakano, and M. Sugiyama, “Growth of strain-compensated InGaN/AlN multiple quantum wells on GaN by MOVPE,” J. Cryst. Growth 370, 82–86 (2013).
[Crossref]

Fujito, K.

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

Fullmer, K. W.

D. D. Koleske, A. J. Fischer, A. A. Allerman, C. C. Mitchell, K. C. Cross, S. R. Kurtz, J. J. Figiel, K. W. Fullmer, and W. G. Breiland, “Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence,” Appl. Phys. Lett. 81(11), 1940–1942 (2002).
[Crossref]

Gaska, R.

M. Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, H.-C. zur Loye, G. Tamulaitis, A. Zukauskas, D. J. Smith, D. Chandrasekhar, and R. Bicknell-Tassius, “Lattice and energy band engineering in AlInGaN/GaN heterostructures,” Appl. Phys. Lett. 76(9), 1161 (2000).
[Crossref]

M. Asif Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, and A. Bykhovsky, “Piezoelectric doping in AlInGaN/GaN heterostructures,” Appl. Phys. Lett. 75(18), 2806 (1999).
[Crossref]

Goto, S.

S. Tomiya, T. Hino, S. Goto, M. Takeya, and M. Ikeda, “Dislocation related issues in the degradation of GaN-based laser diodes,” IEEE J. Sel. Top. Quantum Electron. 10(6), 1277–1286 (2004).
[Crossref]

Ha, K. H.

S. N. Lee, H. S. Paek, J. K. Son, H. Kim, K. K. Kim, K. H. Ha, O. H. Nam, and Y. Park, “Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices,” J. Electroceram. 23(2-4), 406–409 (2009).
[Crossref]

Haeger, D. A.

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

Hassanet, S.

K. Anazawa, S. Hassanet, K. Fujii, Y. Nakano, and M. Sugiyama, “Growth of strain-compensated InGaN/AlN multiple quantum wells on GaN by MOVPE,” J. Cryst. Growth 370, 82–86 (2013).
[Crossref]

Hino, T.

S. Tomiya, T. Hino, S. Goto, M. Takeya, and M. Ikeda, “Dislocation related issues in the degradation of GaN-based laser diodes,” IEEE J. Sel. Top. Quantum Electron. 10(6), 1277–1286 (2004).
[Crossref]

Hoffmann, V.

A. Knauer, V. Kueller, S. Einfeldt, V. Hoffmann, T. Kolbe, J.-R. van Look, J. Piprek, M. Weyers, and M. Kneissl, “Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diodes,” Proc. SPIE 6797, 67970X (2007).
[Crossref]

Hsu, P. S.

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

Ikeda, M.

S. Tomiya, T. Hino, S. Goto, M. Takeya, and M. Ikeda, “Dislocation related issues in the degradation of GaN-based laser diodes,” IEEE J. Sel. Top. Quantum Electron. 10(6), 1277–1286 (2004).
[Crossref]

Izumi, Y.

T. Wang, Y. H. Liu, Y. B. Lee, Y. Izumi, J. P. Ao, J. Bai, H. D. Li, and S. Sakai, “Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes,” J. Cryst. Growth 235(1-4), 177–182 (2002).
[Crossref]

Ji, Y.

Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, X. W. Sun, Y. Zhao, S. P. DenBaars, S. Nakamura, and H. V. Demir, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z.-H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Z.-H. Zhang, S. T. Tan, Y. Ji, W. Liu, Z. Ju, Z. Kyaw, X. W. Sun, and H. V. Demir, “A PN-type quantum barrier for InGaN/GaN light emitting diodes,” Opt. Express 21(13), 15676–15685 (2013).
[Crossref] [PubMed]

Ju, Z.

Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, X. W. Sun, Y. Zhao, S. P. DenBaars, S. Nakamura, and H. V. Demir, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z.-H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Z.-H. Zhang, S. T. Tan, Y. Ji, W. Liu, Z. Ju, Z. Kyaw, X. W. Sun, and H. V. Demir, “A PN-type quantum barrier for InGaN/GaN light emitting diodes,” Opt. Express 21(13), 15676–15685 (2013).
[Crossref] [PubMed]

Kent, P. R. C.

P. R. C. Kent and A. Zunger, “Carrier localization and the origin of luminescence in cubic InGaN alloys,” Appl. Phys. Lett. 79(13), 1977–1979 (2001).
[Crossref]

Khan, M.

M. Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, H.-C. zur Loye, G. Tamulaitis, A. Zukauskas, D. J. Smith, D. Chandrasekhar, and R. Bicknell-Tassius, “Lattice and energy band engineering in AlInGaN/GaN heterostructures,” Appl. Phys. Lett. 76(9), 1161 (2000).
[Crossref]

Kim, H.

S. N. Lee, H. S. Paek, J. K. Son, H. Kim, K. K. Kim, K. H. Ha, O. H. Nam, and Y. Park, “Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices,” J. Electroceram. 23(2-4), 406–409 (2009).
[Crossref]

Kim, J. K.

M. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

Kim, J.-Y.

M.-K. Kwon, I.-K. Park, S.-H. Beak, J.-Y. Kim, and S. J. Park, “Si delta doping in a GaN barrier layer of InGaN/GaN multi-quantum-well for an efficient ultraviolet light-emitting diode,” J. Appl. Phys. 97(10), 106–109 (2005).

Kim, K. K.

S. N. Lee, H. S. Paek, J. K. Son, H. Kim, K. K. Kim, K. H. Ha, O. H. Nam, and Y. Park, “Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices,” J. Electroceram. 23(2-4), 406–409 (2009).
[Crossref]

Kim, M.

M. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

Knauer, A.

A. Knauer, V. Kueller, S. Einfeldt, V. Hoffmann, T. Kolbe, J.-R. van Look, J. Piprek, M. Weyers, and M. Kneissl, “Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diodes,” Proc. SPIE 6797, 67970X (2007).
[Crossref]

Kneissl, M.

A. Knauer, V. Kueller, S. Einfeldt, V. Hoffmann, T. Kolbe, J.-R. van Look, J. Piprek, M. Weyers, and M. Kneissl, “Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diodes,” Proc. SPIE 6797, 67970X (2007).
[Crossref]

Kolbe, T.

A. Knauer, V. Kueller, S. Einfeldt, V. Hoffmann, T. Kolbe, J.-R. van Look, J. Piprek, M. Weyers, and M. Kneissl, “Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diodes,” Proc. SPIE 6797, 67970X (2007).
[Crossref]

Koleske, D. D.

D. D. Koleske, A. J. Fischer, A. A. Allerman, C. C. Mitchell, K. C. Cross, S. R. Kurtz, J. J. Figiel, K. W. Fullmer, and W. G. Breiland, “Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence,” Appl. Phys. Lett. 81(11), 1940–1942 (2002).
[Crossref]

Kueller, V.

A. Knauer, V. Kueller, S. Einfeldt, V. Hoffmann, T. Kolbe, J.-R. van Look, J. Piprek, M. Weyers, and M. Kneissl, “Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diodes,” Proc. SPIE 6797, 67970X (2007).
[Crossref]

Kuo, C. H.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-Doping on the Characteristics of InGaN–GaN Multiple Quantum-Well Blue Light Emitting Diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Kurtz, S. R.

D. D. Koleske, A. J. Fischer, A. A. Allerman, C. C. Mitchell, K. C. Cross, S. R. Kurtz, J. J. Figiel, K. W. Fullmer, and W. G. Breiland, “Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence,” Appl. Phys. Lett. 81(11), 1940–1942 (2002).
[Crossref]

Kwon, M.-K.

M.-K. Kwon, I.-K. Park, S.-H. Beak, J.-Y. Kim, and S. J. Park, “Si delta doping in a GaN barrier layer of InGaN/GaN multi-quantum-well for an efficient ultraviolet light-emitting diode,” J. Appl. Phys. 97(10), 106–109 (2005).

Kyaw, Z.

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z.-H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Z.-H. Zhang, S. T. Tan, Y. Ji, W. Liu, Z. Ju, Z. Kyaw, X. W. Sun, and H. V. Demir, “A PN-type quantum barrier for InGaN/GaN light emitting diodes,” Opt. Express 21(13), 15676–15685 (2013).
[Crossref] [PubMed]

Lai, W. C.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-Doping on the Characteristics of InGaN–GaN Multiple Quantum-Well Blue Light Emitting Diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Lee, S. N.

S. N. Lee, H. S. Paek, J. K. Son, H. Kim, K. K. Kim, K. H. Ha, O. H. Nam, and Y. Park, “Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices,” J. Electroceram. 23(2-4), 406–409 (2009).
[Crossref]

Lee, Y. B.

T. Wang, Y. H. Liu, Y. B. Lee, Y. Izumi, J. P. Ao, J. Bai, H. D. Li, and S. Sakai, “Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes,” J. Cryst. Growth 235(1-4), 177–182 (2002).
[Crossref]

Lester, S. D.

S. D. Lester, F. A. Ponce, M. G. Craford, and D. A. Steigerwald, “High Dislocation Densities in High-Efficiency Gan-Based Light-Emitting-Diodes,” Appl. Phys. Lett. 66(10), 1249–1251 (1995).
[Crossref]

Li, H. D.

T. Wang, Y. H. Liu, Y. B. Lee, Y. Izumi, J. P. Ao, J. Bai, H. D. Li, and S. Sakai, “Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes,” J. Cryst. Growth 235(1-4), 177–182 (2002).
[Crossref]

Li, J.

J. Li, S. L. Shi, Y. J. Wang, S. J. Xu, D. G. Zhao, J. J. Zhu, H. Yang, and F. Lu, “Violet electroluminescence of AlInGaN–InGaN Multiquantum-well light-emitting diodes: quantum-confined Stark effect and heating effect,” IEEE Photon. Technol. Lett. 19(10), 789–791 (2007).

Liu, W.

Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, X. W. Sun, Y. Zhao, S. P. DenBaars, S. Nakamura, and H. V. Demir, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z.-H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Z.-H. Zhang, S. T. Tan, Y. Ji, W. Liu, Z. Ju, Z. Kyaw, X. W. Sun, and H. V. Demir, “A PN-type quantum barrier for InGaN/GaN light emitting diodes,” Opt. Express 21(13), 15676–15685 (2013).
[Crossref] [PubMed]

Liu, Y. H.

T. Wang, Y. H. Liu, Y. B. Lee, Y. Izumi, J. P. Ao, J. Bai, H. D. Li, and S. Sakai, “Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes,” J. Cryst. Growth 235(1-4), 177–182 (2002).
[Crossref]

Lu, F.

J. Li, S. L. Shi, Y. J. Wang, S. J. Xu, D. G. Zhao, J. J. Zhu, H. Yang, and F. Lu, “Violet electroluminescence of AlInGaN–InGaN Multiquantum-well light-emitting diodes: quantum-confined Stark effect and heating effect,” IEEE Photon. Technol. Lett. 19(10), 789–791 (2007).

Meneghesso, G.

M. Meneghini, A. Tazzoli, G. Mura, G. Meneghesso, and E. Zanoni, “A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs,” IEEE Trans. Electron. Dev. 57(1), 108–118 (2010).
[Crossref]

Meneghini, M.

M. Meneghini, A. Tazzoli, G. Mura, G. Meneghesso, and E. Zanoni, “A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs,” IEEE Trans. Electron. Dev. 57(1), 108–118 (2010).
[Crossref]

Mitchell, C. C.

D. D. Koleske, A. J. Fischer, A. A. Allerman, C. C. Mitchell, K. C. Cross, S. R. Kurtz, J. J. Figiel, K. W. Fullmer, and W. G. Breiland, “Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence,” Appl. Phys. Lett. 81(11), 1940–1942 (2002).
[Crossref]

Mukai, T.

Y. Narukawa, J. Narita, T. Sakamoto, K. Deguchi, T. Yamada, and T. Mukai, “Ultra-high efficiency white light emitting diodes,” Jpn. J. Appl. Phys. 45(41), L1084–L1086 (2006).
[Crossref]

Mura, G.

M. Meneghini, A. Tazzoli, G. Mura, G. Meneghesso, and E. Zanoni, “A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs,” IEEE Trans. Electron. Dev. 57(1), 108–118 (2010).
[Crossref]

Nakamura, S.

Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, X. W. Sun, Y. Zhao, S. P. DenBaars, S. Nakamura, and H. V. Demir, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
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S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Luminescences from localized states in InGaN epilayers,” Appl. Phys. Lett. 70(21), 2822–2825 (1997).
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Nakano, Y.

K. Anazawa, S. Hassanet, K. Fujii, Y. Nakano, and M. Sugiyama, “Growth of strain-compensated InGaN/AlN multiple quantum wells on GaN by MOVPE,” J. Cryst. Growth 370, 82–86 (2013).
[Crossref]

Nam, O. H.

S. N. Lee, H. S. Paek, J. K. Son, H. Kim, K. K. Kim, K. H. Ha, O. H. Nam, and Y. Park, “Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices,” J. Electroceram. 23(2-4), 406–409 (2009).
[Crossref]

Narita, J.

Y. Narukawa, J. Narita, T. Sakamoto, K. Deguchi, T. Yamada, and T. Mukai, “Ultra-high efficiency white light emitting diodes,” Jpn. J. Appl. Phys. 45(41), L1084–L1086 (2006).
[Crossref]

Narukawa, Y.

Y. Narukawa, J. Narita, T. Sakamoto, K. Deguchi, T. Yamada, and T. Mukai, “Ultra-high efficiency white light emitting diodes,” Jpn. J. Appl. Phys. 45(41), L1084–L1086 (2006).
[Crossref]

Paek, H. S.

S. N. Lee, H. S. Paek, J. K. Son, H. Kim, K. K. Kim, K. H. Ha, O. H. Nam, and Y. Park, “Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices,” J. Electroceram. 23(2-4), 406–409 (2009).
[Crossref]

Park, I.-K.

M.-K. Kwon, I.-K. Park, S.-H. Beak, J.-Y. Kim, and S. J. Park, “Si delta doping in a GaN barrier layer of InGaN/GaN multi-quantum-well for an efficient ultraviolet light-emitting diode,” J. Appl. Phys. 97(10), 106–109 (2005).

Park, S. J.

M.-K. Kwon, I.-K. Park, S.-H. Beak, J.-Y. Kim, and S. J. Park, “Si delta doping in a GaN barrier layer of InGaN/GaN multi-quantum-well for an efficient ultraviolet light-emitting diode,” J. Appl. Phys. 97(10), 106–109 (2005).

Park, Y.

S. N. Lee, H. S. Paek, J. K. Son, H. Kim, K. K. Kim, K. H. Ha, O. H. Nam, and Y. Park, “Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices,” J. Electroceram. 23(2-4), 406–409 (2009).
[Crossref]

M. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

Piprek, J.

M. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

A. Knauer, V. Kueller, S. Einfeldt, V. Hoffmann, T. Kolbe, J.-R. van Look, J. Piprek, M. Weyers, and M. Kneissl, “Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diodes,” Proc. SPIE 6797, 67970X (2007).
[Crossref]

Ponce, F. A.

S. D. Lester, F. A. Ponce, M. G. Craford, and D. A. Steigerwald, “High Dislocation Densities in High-Efficiency Gan-Based Light-Emitting-Diodes,” Appl. Phys. Lett. 66(10), 1249–1251 (1995).
[Crossref]

Ronald A Arif, H. Z.

H. Z. Ronald A Arif, Y.-K. Ee, and N. Tansu, “Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes,” IEEE J. Quantum Electron. 44(6), 573–580 (2008).
[Crossref]

Sakai, S.

T. Wang, Y. H. Liu, Y. B. Lee, Y. Izumi, J. P. Ao, J. Bai, H. D. Li, and S. Sakai, “Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes,” J. Cryst. Growth 235(1-4), 177–182 (2002).
[Crossref]

Sakamoto, T.

Y. Narukawa, J. Narita, T. Sakamoto, K. Deguchi, T. Yamada, and T. Mukai, “Ultra-high efficiency white light emitting diodes,” Jpn. J. Appl. Phys. 45(41), L1084–L1086 (2006).
[Crossref]

Schubert, E. F.

M. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

Schubert, M. F.

M. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

Sheu, J. K.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-Doping on the Characteristics of InGaN–GaN Multiple Quantum-Well Blue Light Emitting Diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Shi, S. L.

J. Li, S. L. Shi, Y. J. Wang, S. J. Xu, D. G. Zhao, J. J. Zhu, H. Yang, and F. Lu, “Violet electroluminescence of AlInGaN–InGaN Multiquantum-well light-emitting diodes: quantum-confined Stark effect and heating effect,” IEEE Photon. Technol. Lett. 19(10), 789–791 (2007).

Shur, M. S.

M. Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, H.-C. zur Loye, G. Tamulaitis, A. Zukauskas, D. J. Smith, D. Chandrasekhar, and R. Bicknell-Tassius, “Lattice and energy band engineering in AlInGaN/GaN heterostructures,” Appl. Phys. Lett. 76(9), 1161 (2000).
[Crossref]

M. Asif Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, and A. Bykhovsky, “Piezoelectric doping in AlInGaN/GaN heterostructures,” Appl. Phys. Lett. 75(18), 2806 (1999).
[Crossref]

Simin, G.

M. Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, H.-C. zur Loye, G. Tamulaitis, A. Zukauskas, D. J. Smith, D. Chandrasekhar, and R. Bicknell-Tassius, “Lattice and energy band engineering in AlInGaN/GaN heterostructures,” Appl. Phys. Lett. 76(9), 1161 (2000).
[Crossref]

M. Asif Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, and A. Bykhovsky, “Piezoelectric doping in AlInGaN/GaN heterostructures,” Appl. Phys. Lett. 75(18), 2806 (1999).
[Crossref]

Smith, D. J.

M. Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, H.-C. zur Loye, G. Tamulaitis, A. Zukauskas, D. J. Smith, D. Chandrasekhar, and R. Bicknell-Tassius, “Lattice and energy band engineering in AlInGaN/GaN heterostructures,” Appl. Phys. Lett. 76(9), 1161 (2000).
[Crossref]

Son, J. K.

S. N. Lee, H. S. Paek, J. K. Son, H. Kim, K. K. Kim, K. H. Ha, O. H. Nam, and Y. Park, “Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices,” J. Electroceram. 23(2-4), 406–409 (2009).
[Crossref]

Sota, T.

S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Luminescences from localized states in InGaN epilayers,” Appl. Phys. Lett. 70(21), 2822–2825 (1997).
[Crossref]

Speck, J. S.

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

Steigerwald, D. A.

S. D. Lester, F. A. Ponce, M. G. Craford, and D. A. Steigerwald, “High Dislocation Densities in High-Efficiency Gan-Based Light-Emitting-Diodes,” Appl. Phys. Lett. 66(10), 1249–1251 (1995).
[Crossref]

Su, Y. K.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-Doping on the Characteristics of InGaN–GaN Multiple Quantum-Well Blue Light Emitting Diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Sugiyama, M.

K. Anazawa, S. Hassanet, K. Fujii, Y. Nakano, and M. Sugiyama, “Growth of strain-compensated InGaN/AlN multiple quantum wells on GaN by MOVPE,” J. Cryst. Growth 370, 82–86 (2013).
[Crossref]

Sun, H.

Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, X. W. Sun, Y. Zhao, S. P. DenBaars, S. Nakamura, and H. V. Demir, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]

Sun, X. W.

Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, X. W. Sun, Y. Zhao, S. P. DenBaars, S. Nakamura, and H. V. Demir, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z.-H. Zhang, S. T. Tan, Y. Ji, W. Liu, Z. Ju, Z. Kyaw, X. W. Sun, and H. V. Demir, “A PN-type quantum barrier for InGaN/GaN light emitting diodes,” Opt. Express 21(13), 15676–15685 (2013).
[Crossref] [PubMed]

Z.-H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Takeya, M.

S. Tomiya, T. Hino, S. Goto, M. Takeya, and M. Ikeda, “Dislocation related issues in the degradation of GaN-based laser diodes,” IEEE J. Sel. Top. Quantum Electron. 10(6), 1277–1286 (2004).
[Crossref]

Tamulaitis, G.

M. Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, H.-C. zur Loye, G. Tamulaitis, A. Zukauskas, D. J. Smith, D. Chandrasekhar, and R. Bicknell-Tassius, “Lattice and energy band engineering in AlInGaN/GaN heterostructures,” Appl. Phys. Lett. 76(9), 1161 (2000).
[Crossref]

Tan, S. T.

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, X. W. Sun, Y. Zhao, S. P. DenBaars, S. Nakamura, and H. V. Demir, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]

Z.-H. Zhang, S. T. Tan, Y. Ji, W. Liu, Z. Ju, Z. Kyaw, X. W. Sun, and H. V. Demir, “A PN-type quantum barrier for InGaN/GaN light emitting diodes,” Opt. Express 21(13), 15676–15685 (2013).
[Crossref] [PubMed]

Z.-H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Tansu, N.

H. Z. Ronald A Arif, Y.-K. Ee, and N. Tansu, “Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes,” IEEE J. Quantum Electron. 44(6), 573–580 (2008).
[Crossref]

Tazzoli, A.

M. Meneghini, A. Tazzoli, G. Mura, G. Meneghesso, and E. Zanoni, “A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs,” IEEE Trans. Electron. Dev. 57(1), 108–118 (2010).
[Crossref]

Tomiya, S.

S. Tomiya, T. Hino, S. Goto, M. Takeya, and M. Ikeda, “Dislocation related issues in the degradation of GaN-based laser diodes,” IEEE J. Sel. Top. Quantum Electron. 10(6), 1277–1286 (2004).
[Crossref]

van Look, J.-R.

A. Knauer, V. Kueller, S. Einfeldt, V. Hoffmann, T. Kolbe, J.-R. van Look, J. Piprek, M. Weyers, and M. Kneissl, “Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diodes,” Proc. SPIE 6797, 67970X (2007).
[Crossref]

Wang, L.

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Wang, T.

T. Wang, Y. H. Liu, Y. B. Lee, Y. Izumi, J. P. Ao, J. Bai, H. D. Li, and S. Sakai, “Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes,” J. Cryst. Growth 235(1-4), 177–182 (2002).
[Crossref]

Wang, Y. J.

J. Li, S. L. Shi, Y. J. Wang, S. J. Xu, D. G. Zhao, J. J. Zhu, H. Yang, and F. Lu, “Violet electroluminescence of AlInGaN–InGaN Multiquantum-well light-emitting diodes: quantum-confined Stark effect and heating effect,” IEEE Photon. Technol. Lett. 19(10), 789–791 (2007).

Wen, T. C.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-Doping on the Characteristics of InGaN–GaN Multiple Quantum-Well Blue Light Emitting Diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Weyers, M.

A. Knauer, V. Kueller, S. Einfeldt, V. Hoffmann, T. Kolbe, J.-R. van Look, J. Piprek, M. Weyers, and M. Kneissl, “Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diodes,” Proc. SPIE 6797, 67970X (2007).
[Crossref]

Wu, L. W.

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-Doping on the Characteristics of InGaN–GaN Multiple Quantum-Well Blue Light Emitting Diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

Xu, S. J.

J. Li, S. L. Shi, Y. J. Wang, S. J. Xu, D. G. Zhao, J. J. Zhu, H. Yang, and F. Lu, “Violet electroluminescence of AlInGaN–InGaN Multiquantum-well light-emitting diodes: quantum-confined Stark effect and heating effect,” IEEE Photon. Technol. Lett. 19(10), 789–791 (2007).

Yamada, T.

Y. Narukawa, J. Narita, T. Sakamoto, K. Deguchi, T. Yamada, and T. Mukai, “Ultra-high efficiency white light emitting diodes,” Jpn. J. Appl. Phys. 45(41), L1084–L1086 (2006).
[Crossref]

Yang, H.

J. Li, S. L. Shi, Y. J. Wang, S. J. Xu, D. G. Zhao, J. J. Zhu, H. Yang, and F. Lu, “Violet electroluminescence of AlInGaN–InGaN Multiquantum-well light-emitting diodes: quantum-confined Stark effect and heating effect,” IEEE Photon. Technol. Lett. 19(10), 789–791 (2007).

Yang, J. W.

M. Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, H.-C. zur Loye, G. Tamulaitis, A. Zukauskas, D. J. Smith, D. Chandrasekhar, and R. Bicknell-Tassius, “Lattice and energy band engineering in AlInGaN/GaN heterostructures,” Appl. Phys. Lett. 76(9), 1161 (2000).
[Crossref]

M. Asif Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, and A. Bykhovsky, “Piezoelectric doping in AlInGaN/GaN heterostructures,” Appl. Phys. Lett. 75(18), 2806 (1999).
[Crossref]

Zanoni, E.

M. Meneghini, A. Tazzoli, G. Mura, G. Meneghesso, and E. Zanoni, “A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs,” IEEE Trans. Electron. Dev. 57(1), 108–118 (2010).
[Crossref]

Zhang, X.

Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, X. W. Sun, Y. Zhao, S. P. DenBaars, S. Nakamura, and H. V. Demir, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Zhang, Z.-H.

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, X. W. Sun, Y. Zhao, S. P. DenBaars, S. Nakamura, and H. V. Demir, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]

Z.-H. Zhang, S. T. Tan, Y. Ji, W. Liu, Z. Ju, Z. Kyaw, X. W. Sun, and H. V. Demir, “A PN-type quantum barrier for InGaN/GaN light emitting diodes,” Opt. Express 21(13), 15676–15685 (2013).
[Crossref] [PubMed]

Z.-H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Zhao, D. G.

J. Li, S. L. Shi, Y. J. Wang, S. J. Xu, D. G. Zhao, J. J. Zhu, H. Yang, and F. Lu, “Violet electroluminescence of AlInGaN–InGaN Multiquantum-well light-emitting diodes: quantum-confined Stark effect and heating effect,” IEEE Photon. Technol. Lett. 19(10), 789–791 (2007).

Zhao, Y.

Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, X. W. Sun, Y. Zhao, S. P. DenBaars, S. Nakamura, and H. V. Demir, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]

Zhu, J. J.

J. Li, S. L. Shi, Y. J. Wang, S. J. Xu, D. G. Zhao, J. J. Zhu, H. Yang, and F. Lu, “Violet electroluminescence of AlInGaN–InGaN Multiquantum-well light-emitting diodes: quantum-confined Stark effect and heating effect,” IEEE Photon. Technol. Lett. 19(10), 789–791 (2007).

Zukauskas, A.

M. Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, H.-C. zur Loye, G. Tamulaitis, A. Zukauskas, D. J. Smith, D. Chandrasekhar, and R. Bicknell-Tassius, “Lattice and energy band engineering in AlInGaN/GaN heterostructures,” Appl. Phys. Lett. 76(9), 1161 (2000).
[Crossref]

Zunger, A.

P. R. C. Kent and A. Zunger, “Carrier localization and the origin of luminescence in cubic InGaN alloys,” Appl. Phys. Lett. 79(13), 1977–1979 (2001).
[Crossref]

zur Loye, H.-C.

M. Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, H.-C. zur Loye, G. Tamulaitis, A. Zukauskas, D. J. Smith, D. Chandrasekhar, and R. Bicknell-Tassius, “Lattice and energy band engineering in AlInGaN/GaN heterostructures,” Appl. Phys. Lett. 76(9), 1161 (2000).
[Crossref]

Appl. Phys. Lett. (10)

D. D. Koleske, A. J. Fischer, A. A. Allerman, C. C. Mitchell, K. C. Cross, S. R. Kurtz, J. J. Figiel, K. W. Fullmer, and W. G. Breiland, “Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence,” Appl. Phys. Lett. 81(11), 1940–1942 (2002).
[Crossref]

S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Luminescences from localized states in InGaN epilayers,” Appl. Phys. Lett. 70(21), 2822–2825 (1997).
[Crossref]

P. R. C. Kent and A. Zunger, “Carrier localization and the origin of luminescence in cubic InGaN alloys,” Appl. Phys. Lett. 79(13), 1977–1979 (2001).
[Crossref]

S. D. Lester, F. A. Ponce, M. G. Craford, and D. A. Steigerwald, “High Dislocation Densities in High-Efficiency Gan-Based Light-Emitting-Diodes,” Appl. Phys. Lett. 66(10), 1249–1251 (1995).
[Crossref]

M. Asif Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, and A. Bykhovsky, “Piezoelectric doping in AlInGaN/GaN heterostructures,” Appl. Phys. Lett. 75(18), 2806 (1999).
[Crossref]

M. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

Z.-H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, X. W. Sun, Y. Zhao, S. P. DenBaars, S. Nakamura, and H. V. Demir, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]

M. Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, H.-C. zur Loye, G. Tamulaitis, A. Zukauskas, D. J. Smith, D. Chandrasekhar, and R. Bicknell-Tassius, “Lattice and energy band engineering in AlInGaN/GaN heterostructures,” Appl. Phys. Lett. 76(9), 1161 (2000).
[Crossref]

IEEE J. Quantum Electron. (2)

L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-Doping on the Characteristics of InGaN–GaN Multiple Quantum-Well Blue Light Emitting Diodes,” IEEE J. Quantum Electron. 38(5), 446–450 (2002).
[Crossref]

H. Z. Ronald A Arif, Y.-K. Ee, and N. Tansu, “Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes,” IEEE J. Quantum Electron. 44(6), 573–580 (2008).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

S. Tomiya, T. Hino, S. Goto, M. Takeya, and M. Ikeda, “Dislocation related issues in the degradation of GaN-based laser diodes,” IEEE J. Sel. Top. Quantum Electron. 10(6), 1277–1286 (2004).
[Crossref]

IEEE Photon. Technol. Lett. (1)

J. Li, S. L. Shi, Y. J. Wang, S. J. Xu, D. G. Zhao, J. J. Zhu, H. Yang, and F. Lu, “Violet electroluminescence of AlInGaN–InGaN Multiquantum-well light-emitting diodes: quantum-confined Stark effect and heating effect,” IEEE Photon. Technol. Lett. 19(10), 789–791 (2007).

IEEE Trans. Electron. Dev. (1)

M. Meneghini, A. Tazzoli, G. Mura, G. Meneghesso, and E. Zanoni, “A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs,” IEEE Trans. Electron. Dev. 57(1), 108–118 (2010).
[Crossref]

J. Appl. Phys. (1)

M.-K. Kwon, I.-K. Park, S.-H. Beak, J.-Y. Kim, and S. J. Park, “Si delta doping in a GaN barrier layer of InGaN/GaN multi-quantum-well for an efficient ultraviolet light-emitting diode,” J. Appl. Phys. 97(10), 106–109 (2005).

J. Cryst. Growth (2)

T. Wang, Y. H. Liu, Y. B. Lee, Y. Izumi, J. P. Ao, J. Bai, H. D. Li, and S. Sakai, “Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes,” J. Cryst. Growth 235(1-4), 177–182 (2002).
[Crossref]

K. Anazawa, S. Hassanet, K. Fujii, Y. Nakano, and M. Sugiyama, “Growth of strain-compensated InGaN/AlN multiple quantum wells on GaN by MOVPE,” J. Cryst. Growth 370, 82–86 (2013).
[Crossref]

J. Disp. Technol. (1)

Z.-H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

J. Electroceram. (1)

S. N. Lee, H. S. Paek, J. K. Son, H. Kim, K. K. Kim, K. H. Ha, O. H. Nam, and Y. Park, “Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices,” J. Electroceram. 23(2-4), 406–409 (2009).
[Crossref]

Jpn. J. Appl. Phys. (1)

Y. Narukawa, J. Narita, T. Sakamoto, K. Deguchi, T. Yamada, and T. Mukai, “Ultra-high efficiency white light emitting diodes,” Jpn. J. Appl. Phys. 45(41), L1084–L1086 (2006).
[Crossref]

Opt. Express (1)

Proc. SPIE (1)

A. Knauer, V. Kueller, S. Einfeldt, V. Hoffmann, T. Kolbe, J.-R. van Look, J. Piprek, M. Weyers, and M. Kneissl, “Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diodes,” Proc. SPIE 6797, 67970X (2007).
[Crossref]

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Figures (7)

Fig. 1
Fig. 1 (a) UV LEDs structure of the AlGaN/InGaN and AlN/GaN/InGaN MQWs. (b) The growth temperatures and source-switching sequences of of the AlGaN/InGaN and AlN/GaN/InGaN MQWs.
Fig. 2
Fig. 2 (a) Forward I–V and (b) reverse I–V characteristics of GaN-based UV LEDs with AlGaN/InGaN and AlN/GaN/InGaN MQWs.
Fig. 3
Fig. 3 (a) Output power of UV LEDs at 350-mA current injections and (b) external quantum efficiency (EQE) of UV LEDs with AlGaN/InGaN and AlN/GaN/InGaN MQWs. The inset in Fig. 3 (a) shows the emission wavelength dependent the output power enhancement factor.
Fig. 4
Fig. 4 SEM images of the surfaces of (a) AlGaN/InGaN and (b) AlN/GaN/InGaN MQWs. The insets in (a) and (b) are enlarged SEM images of the smooth surface areas of AlGaN/InGaN and AlN/GaN/InGaN MQWs, respectively.
Fig. 5
Fig. 5 The TEM images of the (a)AlGaN/InGaN MQWs and (b)AlN/GaN/InGaN MQWs.
Fig. 6
Fig. 6 EDX line profiles by STEM mode from the (a)AlGaN/InGaN MQWs and (b)AlN/GaN/InGaN MQWs UV LEDs samples.
Fig. 7
Fig. 7 (a) Reverse leakage current at −5V and (b) light output power reliability of UV LEDs with AlGaN/InGaN and AlN/GaN/InGaN MQWs.

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