Abstract

The modulation bandwidths of the light-emitting diodes (LEDs) of different mesa sizes with and without surface plasmon (SP) coupling effect are compared. Due to the significant increase of carrier decay rate, within the size range of LED square-mesa from 60 through 300 micron and the injected current-density range from 139 through 1667 A/cm2, the SP coupling can lead to the enhancement of modulation bandwidth by 44-48%, independent of the variations of LED mesa size or injected current level. The enhancement ratios of modulation bandwidth of the samples with SP coupling with respect to those of the samples without SP coupling are lower than the corresponding ratios of the square-root of photoluminescence decay rate due to the increases of their RC time constants (the product of device resistance and capacitance). The increases of the RC time constants in the samples with SP coupling are attributed to the increases of their device resistance levels when the Ag nanoparticles and GaZnO dielectric interlayer are added to the LED surface for effectively inducing SP coupling.

© 2015 Optical Society of America

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References

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    [Crossref]
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    [Crossref]

2014 (5)

C. L. Liao, C. L. Ho, Y. F. Chang, C. H. Wu, and M. C. Wu, “High-speed light-emitting diodes emitting at 500 nm with 463-MHz modulation bandwidth,” IEEE Electron Device Lett. 35(5), 563–565 (2014).
[Crossref]

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

Y. Kuo, H. T. Chen, W. Y. Chang, H. S. Chen, C. C. Yang, and Y. W. Kiang, “Enhancements of the emission and light extraction of a radiating dipole coupled with localized surface plasmon induced on a surface metal nanoparticle in a light-emitting device,” Opt. Express 22(S1), A155–A166 (2014), doi:.
[Crossref] [PubMed]

C. H. Lin, C. Hsieh, C. G. Tu, Y. Kuo, H. S. Chen, P. Y. Shih, C. H. Liao, Y. W. Kiang, C. C. Yang, C. H. Lai, G. R. He, J. H. Yeh, and T. C. Hsu, “Efficiency improvement of a vertical light-emitting diode through surface plasmon coupling and grating scattering,” Opt. Express 22(S3), A842–A856 (2014), doi:.
[Crossref] [PubMed]

C. H. Lin, C. Y. Su, Y. Kuo, C. H. Chen, Y. F. Yao, P. Y. Shih, H. S. Chen, C. Hsieh, Y. W. Kiang, and C. C. Yang, “Further reduction of efficiency droop effect by adding a lower-index dielectric interlayer in a surface plasmon coupled blue light-emitting diode with surface metal nanoparticles,” Appl. Phys. Lett. 105(10), 101106 (2014).
[Crossref]

2013 (8)

H. S. Chen, Y. F. Yao, C. H. Liao, C. G. Tu, C. Y. Su, W. M. Chang, Y. W. Kiang, and C. C. Yang, “Light-emitting device with regularly patterned growth of an InGaN/GaN quantum-well nanorod light-emitting diode array,” Opt. Lett. 38(17), 3370–3373 (2013).
[Crossref] [PubMed]

W. Gu, T. Xu, and J. Zhang, “Improved ohmic contact of Ga-doped ZnO to p-GaN by using copper sulfide intermediate layers,” Solid-State Electron. 89, 76–80 (2013).
[Crossref]

R. H. Horng, K. C. Shen, C. Y. Yin, C. Y. Huang, and D. S. Wuu, “High performance of Ga-doped ZnO transparent conductive layers using MOCVD for GaN LED applications,” Opt. Express 21(12), 14452–14457 (2013), doi:.
[Crossref] [PubMed]

H. S. Chen, C. F. Chen, Y. Kuo, W. H. Chou, C. H. Shen, Y. L. Jung, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupled light-emitting diode with metal protrusions into p-GaN,” Appl. Phys. Lett. 102(4), 041108 (2013).
[Crossref]

P. P. Maaskant, H. Shams, M. Akhter, W. Henry, M. J. Kappers, D. Zhu, C. J. Humphreys, and B. Corbett, “High-speed substrate-emitting micro-light-emitting diodes for applications requiring high radiance,” Appl. Phys. Express 6(2), 022102 (2013).
[Crossref]

C. L. Liao, Y. F. Chang, C. L. Ho, and M. C. Wu, “High-speed GaN-based blue light-emitting diodes with gallium-doped ZnO current spreading layer,” IEEE Electron Device Lett. 34(5), 611–613 (2013).
[Crossref]

S. Zhang, S. Watson, J. J. D. McKendry, D. Massoubre, A. Cogman, E. Gu, R. K. Henderson, A. E. Kelly, and M. D. Dawson, “1.5 Gbit/s multi-channel visible light communications using CMOS-controlled GaN-based LEDs,” J. Lightwave Technol. 31(8), 1211–1216 (2013).
[Crossref]

S. Watson, M. Tan, S. P. Najda, P. Perlin, M. Leszczynski, G. Targowski, S. Grzanka, and A. E. Kelly, “Visible light communications using a directly modulated 422 nm GaN laser diode,” Opt. Lett. 38(19), 3792–3794 (2013).
[Crossref] [PubMed]

2012 (3)

2011 (1)

2010 (2)

Z. Gong, S. Jin, Y. Chen, J. McKendry, D. Massoubre, I. M. Watson, E. Gu, and M. D. Dawson, “Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes,” J. Appl. Phys. 107(1), 013103 (2010).
[Crossref]

J. J. D. McKendry, R. P. Green, A. E. Kelly, Z. Gong, B. Guilhabert, D. Massoubre, E. Gu, and M. D. Dawson, “High-speed visible light communications using individual pixels in a micro light-emitting diode array,” IEEE Photon. Technol. Lett. 22(18), 1346–1348 (2010).
[Crossref]

2008 (3)

H. X. Zhang, D. Massoubre, J. McKendry, Z. Gong, B. Guilhabert, C. Griffin, E. Gu, P. E. Jessop, J. M. Girkin, and M. D. Dawson, “Individually-addressable flip-chip AlInGaN micropixelated light emitting diode arrays with high continuous and nanosecond output power,” Opt. Express 16(13), 9918–9926 (2008), doi:.
[Crossref] [PubMed]

J. W. Shi, J. K. Sheu, C. H. Chen, G. R. Lin, and W. C. Lai, “High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures,” IEEE Electron Device Lett. 29(2), 158–160 (2008).
[Crossref]

Y. Yoshida, S. Tanaka, I. Hiromitsu, Y. Fujita, and K. Yoshino, “Ga-doped ZnO film as a transparent electrode for phthalocyanine/perylene heterojunction solar cell,” Jpn. J. Appl. Phys. 47(2), 867–871 (2008).
[Crossref]

2007 (2)

F. Z. Lin, Y. J. Chiu, and T. H. Wu, “Cladding layer impedance reduction to improve microwave propagation properties in p-i-n waveguides,” IEEE Photon. Technol. Lett. 19(5), 276–278 (2007).
[Crossref]

Z. Gong, H. X. Zhang, E. Gu, C. Griffin, M. D. Dawson, V. Poher, G. Kennedy, P. M. W. French, and M. A. A. Neil, “Matrix-addressable micropixellated InGaN light-emitting diodes with uniform emission and increased light output,” IEEE Transact, Electron Dev. 54(10), 2650–2658 (2007).
[Crossref]

2004 (2)

H. W. Choi, C. W. Jeon, and M. D. Dawson, “Fabrication of matrix-addressable micro-LED arrays based on a novel etch technique,” J. Cryst. Growth 268(3-4), 527–530 (2004).
[Crossref]

H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson, “GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses,” Appl. Phys. Lett. 84(13), 2253–2255 (2004).
[Crossref]

2003 (1)

H. W. Choi, C. W. Jeon, M. D. Dawson, P. R. Edwards, R. W. Martin, and S. Tripathy, “Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes,” J. Appl. Phys. 93(10), 5978–5982 (2003).
[Crossref]

1998 (1)

Y. J. Chiu, S. B. Fleischer, and J. E. Bowers, “High-speed low-temperature-grown GaAs p-i-n traveling-wave photodetector,” IEEE Photon. Technol. Lett. 10(7), 1012–1014 (1998).
[Crossref]

1992 (1)

S. Y. Chou, Y. Liu, W. Khalil, T. Y. Hsiang, and S. Alexandrou, “Ultrafast nanoscale metal-semiconductor-metal photodetectors on bulk and low-temperature grown GaAs,” Appl. Phys. Lett. 61(7), 819–821 (1992).
[Crossref]

1977 (1)

K. Ikeda, S. Horiuchi, T. Naka, and W. Susaki, “Design parameters of frequency response of GaAs-(Ga,Al)As double heterostructure LED’s for optic communications,” IEEE Transac, Electron Dev. ED-24(7), 1001–1005 (1977).
[Crossref]

Akhter, M.

P. P. Maaskant, H. Shams, M. Akhter, W. Henry, M. J. Kappers, D. Zhu, C. J. Humphreys, and B. Corbett, “High-speed substrate-emitting micro-light-emitting diodes for applications requiring high radiance,” Appl. Phys. Express 6(2), 022102 (2013).
[Crossref]

Alexandrou, S.

S. Y. Chou, Y. Liu, W. Khalil, T. Y. Hsiang, and S. Alexandrou, “Ultrafast nanoscale metal-semiconductor-metal photodetectors on bulk and low-temperature grown GaAs,” Appl. Phys. Lett. 61(7), 819–821 (1992).
[Crossref]

Bowers, J. E.

J. M. Wun, C. W. Lin, W. Chen, J. K. Sheu, C. L. Lin, Y. L. Li, J. E. Bowers, J. W. Shi, J. Vinogradov, R. Kruglov, and O. Ziemann, “GaN-based miniaturized cyan light-emitting diodes on a patterned sapphire substrate with improved fiber coupling for very high-speed plastic optical fiber communication,” IEEE Photon. J. 4(5), 1520–1529 (2012).
[Crossref]

Y. J. Chiu, S. B. Fleischer, and J. E. Bowers, “High-speed low-temperature-grown GaAs p-i-n traveling-wave photodetector,” IEEE Photon. Technol. Lett. 10(7), 1012–1014 (1998).
[Crossref]

Cao, W.

Chang, W. M.

Chang, W. Y.

Chang, Y. F.

C. L. Liao, C. L. Ho, Y. F. Chang, C. H. Wu, and M. C. Wu, “High-speed light-emitting diodes emitting at 500 nm with 463-MHz modulation bandwidth,” IEEE Electron Device Lett. 35(5), 563–565 (2014).
[Crossref]

C. L. Liao, Y. F. Chang, C. L. Ho, and M. C. Wu, “High-speed GaN-based blue light-emitting diodes with gallium-doped ZnO current spreading layer,” IEEE Electron Device Lett. 34(5), 611–613 (2013).
[Crossref]

Chen, C. F.

H. S. Chen, C. F. Chen, Y. Kuo, W. H. Chou, C. H. Shen, Y. L. Jung, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupled light-emitting diode with metal protrusions into p-GaN,” Appl. Phys. Lett. 102(4), 041108 (2013).
[Crossref]

Chen, C. H.

C. H. Lin, C. Y. Su, Y. Kuo, C. H. Chen, Y. F. Yao, P. Y. Shih, H. S. Chen, C. Hsieh, Y. W. Kiang, and C. C. Yang, “Further reduction of efficiency droop effect by adding a lower-index dielectric interlayer in a surface plasmon coupled blue light-emitting diode with surface metal nanoparticles,” Appl. Phys. Lett. 105(10), 101106 (2014).
[Crossref]

J. W. Shi, J. K. Sheu, C. H. Chen, G. R. Lin, and W. C. Lai, “High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures,” IEEE Electron Device Lett. 29(2), 158–160 (2008).
[Crossref]

Chen, C. Y.

Chen, H. S.

Y. Kuo, H. T. Chen, W. Y. Chang, H. S. Chen, C. C. Yang, and Y. W. Kiang, “Enhancements of the emission and light extraction of a radiating dipole coupled with localized surface plasmon induced on a surface metal nanoparticle in a light-emitting device,” Opt. Express 22(S1), A155–A166 (2014), doi:.
[Crossref] [PubMed]

C. H. Lin, C. Y. Su, Y. Kuo, C. H. Chen, Y. F. Yao, P. Y. Shih, H. S. Chen, C. Hsieh, Y. W. Kiang, and C. C. Yang, “Further reduction of efficiency droop effect by adding a lower-index dielectric interlayer in a surface plasmon coupled blue light-emitting diode with surface metal nanoparticles,” Appl. Phys. Lett. 105(10), 101106 (2014).
[Crossref]

C. H. Lin, C. Hsieh, C. G. Tu, Y. Kuo, H. S. Chen, P. Y. Shih, C. H. Liao, Y. W. Kiang, C. C. Yang, C. H. Lai, G. R. He, J. H. Yeh, and T. C. Hsu, “Efficiency improvement of a vertical light-emitting diode through surface plasmon coupling and grating scattering,” Opt. Express 22(S3), A842–A856 (2014), doi:.
[Crossref] [PubMed]

H. S. Chen, C. F. Chen, Y. Kuo, W. H. Chou, C. H. Shen, Y. L. Jung, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupled light-emitting diode with metal protrusions into p-GaN,” Appl. Phys. Lett. 102(4), 041108 (2013).
[Crossref]

H. S. Chen, Y. F. Yao, C. H. Liao, C. G. Tu, C. Y. Su, W. M. Chang, Y. W. Kiang, and C. C. Yang, “Light-emitting device with regularly patterned growth of an InGaN/GaN quantum-well nanorod light-emitting diode array,” Opt. Lett. 38(17), 3370–3373 (2013).
[Crossref] [PubMed]

C. Y. Chen, C. Hsieh, C. H. Liao, W. L. Chung, H. T. Chen, W. Cao, W. M. Chang, H. S. Chen, Y. F. Yao, S. Y. Ting, Y. W. Kiang, C. C. Yang, and X. Hu, “Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode,” Opt. Express 20(10), 11321–11335 (2012), doi:.
[Crossref] [PubMed]

Chen, H. T.

Chen, W.

J. M. Wun, C. W. Lin, W. Chen, J. K. Sheu, C. L. Lin, Y. L. Li, J. E. Bowers, J. W. Shi, J. Vinogradov, R. Kruglov, and O. Ziemann, “GaN-based miniaturized cyan light-emitting diodes on a patterned sapphire substrate with improved fiber coupling for very high-speed plastic optical fiber communication,” IEEE Photon. J. 4(5), 1520–1529 (2012).
[Crossref]

Chen, Y.

Z. Gong, S. Jin, Y. Chen, J. McKendry, D. Massoubre, I. M. Watson, E. Gu, and M. D. Dawson, “Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes,” J. Appl. Phys. 107(1), 013103 (2010).
[Crossref]

Chiu, Y. J.

F. Z. Lin, Y. J. Chiu, and T. H. Wu, “Cladding layer impedance reduction to improve microwave propagation properties in p-i-n waveguides,” IEEE Photon. Technol. Lett. 19(5), 276–278 (2007).
[Crossref]

Y. J. Chiu, S. B. Fleischer, and J. E. Bowers, “High-speed low-temperature-grown GaAs p-i-n traveling-wave photodetector,” IEEE Photon. Technol. Lett. 10(7), 1012–1014 (1998).
[Crossref]

Choi, H. W.

H. W. Choi, C. W. Jeon, and M. D. Dawson, “Fabrication of matrix-addressable micro-LED arrays based on a novel etch technique,” J. Cryst. Growth 268(3-4), 527–530 (2004).
[Crossref]

H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson, “GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses,” Appl. Phys. Lett. 84(13), 2253–2255 (2004).
[Crossref]

H. W. Choi, C. W. Jeon, M. D. Dawson, P. R. Edwards, R. W. Martin, and S. Tripathy, “Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes,” J. Appl. Phys. 93(10), 5978–5982 (2003).
[Crossref]

Chou, S. Y.

S. Y. Chou, Y. Liu, W. Khalil, T. Y. Hsiang, and S. Alexandrou, “Ultrafast nanoscale metal-semiconductor-metal photodetectors on bulk and low-temperature grown GaAs,” Appl. Phys. Lett. 61(7), 819–821 (1992).
[Crossref]

Chou, W. H.

H. S. Chen, C. F. Chen, Y. Kuo, W. H. Chou, C. H. Shen, Y. L. Jung, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupled light-emitting diode with metal protrusions into p-GaN,” Appl. Phys. Lett. 102(4), 041108 (2013).
[Crossref]

Chuang, W. H.

Chung, W. L.

Cogman, A.

Corbett, B.

P. P. Maaskant, H. Shams, M. Akhter, W. Henry, M. J. Kappers, D. Zhu, C. J. Humphreys, and B. Corbett, “High-speed substrate-emitting micro-light-emitting diodes for applications requiring high radiance,” Appl. Phys. Express 6(2), 022102 (2013).
[Crossref]

Dawson, M. D.

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

S. Zhang, S. Watson, J. J. D. McKendry, D. Massoubre, A. Cogman, E. Gu, R. K. Henderson, A. E. Kelly, and M. D. Dawson, “1.5 Gbit/s multi-channel visible light communications using CMOS-controlled GaN-based LEDs,” J. Lightwave Technol. 31(8), 1211–1216 (2013).
[Crossref]

J. J. D. McKendry, D. Massoubre, S. Zhang, B. R. Rae, R. P. Green, E. Gu, R. K. Henderson, A. E. Kelly, and M. D. Dawson, “Visible-light communications using a CMOS-controlled micro-light-emitting-diode array,” J. Lightwave Technol. 30(1), 61–67 (2012).
[Crossref]

Z. Gong, S. Jin, Y. Chen, J. McKendry, D. Massoubre, I. M. Watson, E. Gu, and M. D. Dawson, “Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes,” J. Appl. Phys. 107(1), 013103 (2010).
[Crossref]

J. J. D. McKendry, R. P. Green, A. E. Kelly, Z. Gong, B. Guilhabert, D. Massoubre, E. Gu, and M. D. Dawson, “High-speed visible light communications using individual pixels in a micro light-emitting diode array,” IEEE Photon. Technol. Lett. 22(18), 1346–1348 (2010).
[Crossref]

H. X. Zhang, D. Massoubre, J. McKendry, Z. Gong, B. Guilhabert, C. Griffin, E. Gu, P. E. Jessop, J. M. Girkin, and M. D. Dawson, “Individually-addressable flip-chip AlInGaN micropixelated light emitting diode arrays with high continuous and nanosecond output power,” Opt. Express 16(13), 9918–9926 (2008), doi:.
[Crossref] [PubMed]

Z. Gong, H. X. Zhang, E. Gu, C. Griffin, M. D. Dawson, V. Poher, G. Kennedy, P. M. W. French, and M. A. A. Neil, “Matrix-addressable micropixellated InGaN light-emitting diodes with uniform emission and increased light output,” IEEE Transact, Electron Dev. 54(10), 2650–2658 (2007).
[Crossref]

H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson, “GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses,” Appl. Phys. Lett. 84(13), 2253–2255 (2004).
[Crossref]

H. W. Choi, C. W. Jeon, and M. D. Dawson, “Fabrication of matrix-addressable micro-LED arrays based on a novel etch technique,” J. Cryst. Growth 268(3-4), 527–530 (2004).
[Crossref]

H. W. Choi, C. W. Jeon, M. D. Dawson, P. R. Edwards, R. W. Martin, and S. Tripathy, “Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes,” J. Appl. Phys. 93(10), 5978–5982 (2003).
[Crossref]

Edwards, P. R.

H. W. Choi, C. W. Jeon, M. D. Dawson, P. R. Edwards, R. W. Martin, and S. Tripathy, “Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes,” J. Appl. Phys. 93(10), 5978–5982 (2003).
[Crossref]

Fleischer, S. B.

Y. J. Chiu, S. B. Fleischer, and J. E. Bowers, “High-speed low-temperature-grown GaAs p-i-n traveling-wave photodetector,” IEEE Photon. Technol. Lett. 10(7), 1012–1014 (1998).
[Crossref]

French, P. M. W.

Z. Gong, H. X. Zhang, E. Gu, C. Griffin, M. D. Dawson, V. Poher, G. Kennedy, P. M. W. French, and M. A. A. Neil, “Matrix-addressable micropixellated InGaN light-emitting diodes with uniform emission and increased light output,” IEEE Transact, Electron Dev. 54(10), 2650–2658 (2007).
[Crossref]

Fujita, Y.

Y. Yoshida, S. Tanaka, I. Hiromitsu, Y. Fujita, and K. Yoshino, “Ga-doped ZnO film as a transparent electrode for phthalocyanine/perylene heterojunction solar cell,” Jpn. J. Appl. Phys. 47(2), 867–871 (2008).
[Crossref]

Girkin, J. M.

H. X. Zhang, D. Massoubre, J. McKendry, Z. Gong, B. Guilhabert, C. Griffin, E. Gu, P. E. Jessop, J. M. Girkin, and M. D. Dawson, “Individually-addressable flip-chip AlInGaN micropixelated light emitting diode arrays with high continuous and nanosecond output power,” Opt. Express 16(13), 9918–9926 (2008), doi:.
[Crossref] [PubMed]

H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson, “GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses,” Appl. Phys. Lett. 84(13), 2253–2255 (2004).
[Crossref]

Gong, Z.

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

J. J. D. McKendry, R. P. Green, A. E. Kelly, Z. Gong, B. Guilhabert, D. Massoubre, E. Gu, and M. D. Dawson, “High-speed visible light communications using individual pixels in a micro light-emitting diode array,” IEEE Photon. Technol. Lett. 22(18), 1346–1348 (2010).
[Crossref]

Z. Gong, S. Jin, Y. Chen, J. McKendry, D. Massoubre, I. M. Watson, E. Gu, and M. D. Dawson, “Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes,” J. Appl. Phys. 107(1), 013103 (2010).
[Crossref]

H. X. Zhang, D. Massoubre, J. McKendry, Z. Gong, B. Guilhabert, C. Griffin, E. Gu, P. E. Jessop, J. M. Girkin, and M. D. Dawson, “Individually-addressable flip-chip AlInGaN micropixelated light emitting diode arrays with high continuous and nanosecond output power,” Opt. Express 16(13), 9918–9926 (2008), doi:.
[Crossref] [PubMed]

Z. Gong, H. X. Zhang, E. Gu, C. Griffin, M. D. Dawson, V. Poher, G. Kennedy, P. M. W. French, and M. A. A. Neil, “Matrix-addressable micropixellated InGaN light-emitting diodes with uniform emission and increased light output,” IEEE Transact, Electron Dev. 54(10), 2650–2658 (2007).
[Crossref]

Green, R. P.

J. J. D. McKendry, D. Massoubre, S. Zhang, B. R. Rae, R. P. Green, E. Gu, R. K. Henderson, A. E. Kelly, and M. D. Dawson, “Visible-light communications using a CMOS-controlled micro-light-emitting-diode array,” J. Lightwave Technol. 30(1), 61–67 (2012).
[Crossref]

J. J. D. McKendry, R. P. Green, A. E. Kelly, Z. Gong, B. Guilhabert, D. Massoubre, E. Gu, and M. D. Dawson, “High-speed visible light communications using individual pixels in a micro light-emitting diode array,” IEEE Photon. Technol. Lett. 22(18), 1346–1348 (2010).
[Crossref]

Griffin, C.

H. X. Zhang, D. Massoubre, J. McKendry, Z. Gong, B. Guilhabert, C. Griffin, E. Gu, P. E. Jessop, J. M. Girkin, and M. D. Dawson, “Individually-addressable flip-chip AlInGaN micropixelated light emitting diode arrays with high continuous and nanosecond output power,” Opt. Express 16(13), 9918–9926 (2008), doi:.
[Crossref] [PubMed]

Z. Gong, H. X. Zhang, E. Gu, C. Griffin, M. D. Dawson, V. Poher, G. Kennedy, P. M. W. French, and M. A. A. Neil, “Matrix-addressable micropixellated InGaN light-emitting diodes with uniform emission and increased light output,” IEEE Transact, Electron Dev. 54(10), 2650–2658 (2007).
[Crossref]

Grzanka, S.

Gu, E.

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

S. Zhang, S. Watson, J. J. D. McKendry, D. Massoubre, A. Cogman, E. Gu, R. K. Henderson, A. E. Kelly, and M. D. Dawson, “1.5 Gbit/s multi-channel visible light communications using CMOS-controlled GaN-based LEDs,” J. Lightwave Technol. 31(8), 1211–1216 (2013).
[Crossref]

J. J. D. McKendry, D. Massoubre, S. Zhang, B. R. Rae, R. P. Green, E. Gu, R. K. Henderson, A. E. Kelly, and M. D. Dawson, “Visible-light communications using a CMOS-controlled micro-light-emitting-diode array,” J. Lightwave Technol. 30(1), 61–67 (2012).
[Crossref]

Z. Gong, S. Jin, Y. Chen, J. McKendry, D. Massoubre, I. M. Watson, E. Gu, and M. D. Dawson, “Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes,” J. Appl. Phys. 107(1), 013103 (2010).
[Crossref]

J. J. D. McKendry, R. P. Green, A. E. Kelly, Z. Gong, B. Guilhabert, D. Massoubre, E. Gu, and M. D. Dawson, “High-speed visible light communications using individual pixels in a micro light-emitting diode array,” IEEE Photon. Technol. Lett. 22(18), 1346–1348 (2010).
[Crossref]

H. X. Zhang, D. Massoubre, J. McKendry, Z. Gong, B. Guilhabert, C. Griffin, E. Gu, P. E. Jessop, J. M. Girkin, and M. D. Dawson, “Individually-addressable flip-chip AlInGaN micropixelated light emitting diode arrays with high continuous and nanosecond output power,” Opt. Express 16(13), 9918–9926 (2008), doi:.
[Crossref] [PubMed]

Z. Gong, H. X. Zhang, E. Gu, C. Griffin, M. D. Dawson, V. Poher, G. Kennedy, P. M. W. French, and M. A. A. Neil, “Matrix-addressable micropixellated InGaN light-emitting diodes with uniform emission and increased light output,” IEEE Transact, Electron Dev. 54(10), 2650–2658 (2007).
[Crossref]

H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson, “GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses,” Appl. Phys. Lett. 84(13), 2253–2255 (2004).
[Crossref]

Gu, W.

W. Gu, T. Xu, and J. Zhang, “Improved ohmic contact of Ga-doped ZnO to p-GaN by using copper sulfide intermediate layers,” Solid-State Electron. 89, 76–80 (2013).
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Guilhabert, B.

J. J. D. McKendry, R. P. Green, A. E. Kelly, Z. Gong, B. Guilhabert, D. Massoubre, E. Gu, and M. D. Dawson, “High-speed visible light communications using individual pixels in a micro light-emitting diode array,” IEEE Photon. Technol. Lett. 22(18), 1346–1348 (2010).
[Crossref]

H. X. Zhang, D. Massoubre, J. McKendry, Z. Gong, B. Guilhabert, C. Griffin, E. Gu, P. E. Jessop, J. M. Girkin, and M. D. Dawson, “Individually-addressable flip-chip AlInGaN micropixelated light emitting diode arrays with high continuous and nanosecond output power,” Opt. Express 16(13), 9918–9926 (2008), doi:.
[Crossref] [PubMed]

He, G. R.

Henderson, R. K.

Henry, W.

P. P. Maaskant, H. Shams, M. Akhter, W. Henry, M. J. Kappers, D. Zhu, C. J. Humphreys, and B. Corbett, “High-speed substrate-emitting micro-light-emitting diodes for applications requiring high radiance,” Appl. Phys. Express 6(2), 022102 (2013).
[Crossref]

Hiromitsu, I.

Y. Yoshida, S. Tanaka, I. Hiromitsu, Y. Fujita, and K. Yoshino, “Ga-doped ZnO film as a transparent electrode for phthalocyanine/perylene heterojunction solar cell,” Jpn. J. Appl. Phys. 47(2), 867–871 (2008).
[Crossref]

Ho, C. L.

C. L. Liao, C. L. Ho, Y. F. Chang, C. H. Wu, and M. C. Wu, “High-speed light-emitting diodes emitting at 500 nm with 463-MHz modulation bandwidth,” IEEE Electron Device Lett. 35(5), 563–565 (2014).
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C. L. Liao, Y. F. Chang, C. L. Ho, and M. C. Wu, “High-speed GaN-based blue light-emitting diodes with gallium-doped ZnO current spreading layer,” IEEE Electron Device Lett. 34(5), 611–613 (2013).
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Horiuchi, S.

K. Ikeda, S. Horiuchi, T. Naka, and W. Susaki, “Design parameters of frequency response of GaAs-(Ga,Al)As double heterostructure LED’s for optic communications,” IEEE Transac, Electron Dev. ED-24(7), 1001–1005 (1977).
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Horng, R. H.

Hsiang, T. Y.

S. Y. Chou, Y. Liu, W. Khalil, T. Y. Hsiang, and S. Alexandrou, “Ultrafast nanoscale metal-semiconductor-metal photodetectors on bulk and low-temperature grown GaAs,” Appl. Phys. Lett. 61(7), 819–821 (1992).
[Crossref]

Hsieh, C.

Hsu, T. C.

Hu, X.

Huang, C. Y.

Huang, J. J.

Humphreys, C. J.

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

P. P. Maaskant, H. Shams, M. Akhter, W. Henry, M. J. Kappers, D. Zhu, C. J. Humphreys, and B. Corbett, “High-speed substrate-emitting micro-light-emitting diodes for applications requiring high radiance,” Appl. Phys. Express 6(2), 022102 (2013).
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Ikeda, K.

K. Ikeda, S. Horiuchi, T. Naka, and W. Susaki, “Design parameters of frequency response of GaAs-(Ga,Al)As double heterostructure LED’s for optic communications,” IEEE Transac, Electron Dev. ED-24(7), 1001–1005 (1977).
[Crossref]

Jeon, C. W.

H. W. Choi, C. W. Jeon, and M. D. Dawson, “Fabrication of matrix-addressable micro-LED arrays based on a novel etch technique,” J. Cryst. Growth 268(3-4), 527–530 (2004).
[Crossref]

H. W. Choi, C. W. Jeon, M. D. Dawson, P. R. Edwards, R. W. Martin, and S. Tripathy, “Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes,” J. Appl. Phys. 93(10), 5978–5982 (2003).
[Crossref]

Jessop, P. E.

Jin, S.

Z. Gong, S. Jin, Y. Chen, J. McKendry, D. Massoubre, I. M. Watson, E. Gu, and M. D. Dawson, “Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes,” J. Appl. Phys. 107(1), 013103 (2010).
[Crossref]

Jung, Y. L.

H. S. Chen, C. F. Chen, Y. Kuo, W. H. Chou, C. H. Shen, Y. L. Jung, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupled light-emitting diode with metal protrusions into p-GaN,” Appl. Phys. Lett. 102(4), 041108 (2013).
[Crossref]

Kappers, M. J.

P. P. Maaskant, H. Shams, M. Akhter, W. Henry, M. J. Kappers, D. Zhu, C. J. Humphreys, and B. Corbett, “High-speed substrate-emitting micro-light-emitting diodes for applications requiring high radiance,” Appl. Phys. Express 6(2), 022102 (2013).
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Kelly, A. E.

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

S. Zhang, S. Watson, J. J. D. McKendry, D. Massoubre, A. Cogman, E. Gu, R. K. Henderson, A. E. Kelly, and M. D. Dawson, “1.5 Gbit/s multi-channel visible light communications using CMOS-controlled GaN-based LEDs,” J. Lightwave Technol. 31(8), 1211–1216 (2013).
[Crossref]

S. Watson, M. Tan, S. P. Najda, P. Perlin, M. Leszczynski, G. Targowski, S. Grzanka, and A. E. Kelly, “Visible light communications using a directly modulated 422 nm GaN laser diode,” Opt. Lett. 38(19), 3792–3794 (2013).
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J. J. D. McKendry, D. Massoubre, S. Zhang, B. R. Rae, R. P. Green, E. Gu, R. K. Henderson, A. E. Kelly, and M. D. Dawson, “Visible-light communications using a CMOS-controlled micro-light-emitting-diode array,” J. Lightwave Technol. 30(1), 61–67 (2012).
[Crossref]

J. J. D. McKendry, R. P. Green, A. E. Kelly, Z. Gong, B. Guilhabert, D. Massoubre, E. Gu, and M. D. Dawson, “High-speed visible light communications using individual pixels in a micro light-emitting diode array,” IEEE Photon. Technol. Lett. 22(18), 1346–1348 (2010).
[Crossref]

Kennedy, G.

Z. Gong, H. X. Zhang, E. Gu, C. Griffin, M. D. Dawson, V. Poher, G. Kennedy, P. M. W. French, and M. A. A. Neil, “Matrix-addressable micropixellated InGaN light-emitting diodes with uniform emission and increased light output,” IEEE Transact, Electron Dev. 54(10), 2650–2658 (2007).
[Crossref]

Khalil, W.

S. Y. Chou, Y. Liu, W. Khalil, T. Y. Hsiang, and S. Alexandrou, “Ultrafast nanoscale metal-semiconductor-metal photodetectors on bulk and low-temperature grown GaAs,” Appl. Phys. Lett. 61(7), 819–821 (1992).
[Crossref]

Kiang, Y. W.

C. H. Lin, C. Y. Su, Y. Kuo, C. H. Chen, Y. F. Yao, P. Y. Shih, H. S. Chen, C. Hsieh, Y. W. Kiang, and C. C. Yang, “Further reduction of efficiency droop effect by adding a lower-index dielectric interlayer in a surface plasmon coupled blue light-emitting diode with surface metal nanoparticles,” Appl. Phys. Lett. 105(10), 101106 (2014).
[Crossref]

Y. Kuo, H. T. Chen, W. Y. Chang, H. S. Chen, C. C. Yang, and Y. W. Kiang, “Enhancements of the emission and light extraction of a radiating dipole coupled with localized surface plasmon induced on a surface metal nanoparticle in a light-emitting device,” Opt. Express 22(S1), A155–A166 (2014), doi:.
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C. H. Lin, C. Hsieh, C. G. Tu, Y. Kuo, H. S. Chen, P. Y. Shih, C. H. Liao, Y. W. Kiang, C. C. Yang, C. H. Lai, G. R. He, J. H. Yeh, and T. C. Hsu, “Efficiency improvement of a vertical light-emitting diode through surface plasmon coupling and grating scattering,” Opt. Express 22(S3), A842–A856 (2014), doi:.
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H. S. Chen, Y. F. Yao, C. H. Liao, C. G. Tu, C. Y. Su, W. M. Chang, Y. W. Kiang, and C. C. Yang, “Light-emitting device with regularly patterned growth of an InGaN/GaN quantum-well nanorod light-emitting diode array,” Opt. Lett. 38(17), 3370–3373 (2013).
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H. S. Chen, C. F. Chen, Y. Kuo, W. H. Chou, C. H. Shen, Y. L. Jung, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupled light-emitting diode with metal protrusions into p-GaN,” Appl. Phys. Lett. 102(4), 041108 (2013).
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C. Y. Chen, C. Hsieh, C. H. Liao, W. L. Chung, H. T. Chen, W. Cao, W. M. Chang, H. S. Chen, Y. F. Yao, S. Y. Ting, Y. W. Kiang, C. C. Yang, and X. Hu, “Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode,” Opt. Express 20(10), 11321–11335 (2012), doi:.
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Y. Kuo, S. Y. Ting, C. H. Liao, J. J. Huang, C. Y. Chen, C. Hsieh, Y. C. Lu, C. Y. Chen, K. C. Shen, C. F. Lu, D. M. Yeh, J. Y. Wang, W. H. Chuang, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode,” Opt. Express 19(S4), A914–A929 (2011), doi:.
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Kruglov, R.

J. M. Wun, C. W. Lin, W. Chen, J. K. Sheu, C. L. Lin, Y. L. Li, J. E. Bowers, J. W. Shi, J. Vinogradov, R. Kruglov, and O. Ziemann, “GaN-based miniaturized cyan light-emitting diodes on a patterned sapphire substrate with improved fiber coupling for very high-speed plastic optical fiber communication,” IEEE Photon. J. 4(5), 1520–1529 (2012).
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Kuo, Y.

C. H. Lin, C. Hsieh, C. G. Tu, Y. Kuo, H. S. Chen, P. Y. Shih, C. H. Liao, Y. W. Kiang, C. C. Yang, C. H. Lai, G. R. He, J. H. Yeh, and T. C. Hsu, “Efficiency improvement of a vertical light-emitting diode through surface plasmon coupling and grating scattering,” Opt. Express 22(S3), A842–A856 (2014), doi:.
[Crossref] [PubMed]

Y. Kuo, H. T. Chen, W. Y. Chang, H. S. Chen, C. C. Yang, and Y. W. Kiang, “Enhancements of the emission and light extraction of a radiating dipole coupled with localized surface plasmon induced on a surface metal nanoparticle in a light-emitting device,” Opt. Express 22(S1), A155–A166 (2014), doi:.
[Crossref] [PubMed]

C. H. Lin, C. Y. Su, Y. Kuo, C. H. Chen, Y. F. Yao, P. Y. Shih, H. S. Chen, C. Hsieh, Y. W. Kiang, and C. C. Yang, “Further reduction of efficiency droop effect by adding a lower-index dielectric interlayer in a surface plasmon coupled blue light-emitting diode with surface metal nanoparticles,” Appl. Phys. Lett. 105(10), 101106 (2014).
[Crossref]

H. S. Chen, C. F. Chen, Y. Kuo, W. H. Chou, C. H. Shen, Y. L. Jung, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupled light-emitting diode with metal protrusions into p-GaN,” Appl. Phys. Lett. 102(4), 041108 (2013).
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Y. Kuo, S. Y. Ting, C. H. Liao, J. J. Huang, C. Y. Chen, C. Hsieh, Y. C. Lu, C. Y. Chen, K. C. Shen, C. F. Lu, D. M. Yeh, J. Y. Wang, W. H. Chuang, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode,” Opt. Express 19(S4), A914–A929 (2011), doi:.
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Lai, C. H.

Lai, W. C.

J. W. Shi, J. K. Sheu, C. H. Chen, G. R. Lin, and W. C. Lai, “High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures,” IEEE Electron Device Lett. 29(2), 158–160 (2008).
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Li, Y. L.

J. M. Wun, C. W. Lin, W. Chen, J. K. Sheu, C. L. Lin, Y. L. Li, J. E. Bowers, J. W. Shi, J. Vinogradov, R. Kruglov, and O. Ziemann, “GaN-based miniaturized cyan light-emitting diodes on a patterned sapphire substrate with improved fiber coupling for very high-speed plastic optical fiber communication,” IEEE Photon. J. 4(5), 1520–1529 (2012).
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Liao, C. H.

Liao, C. L.

C. L. Liao, C. L. Ho, Y. F. Chang, C. H. Wu, and M. C. Wu, “High-speed light-emitting diodes emitting at 500 nm with 463-MHz modulation bandwidth,” IEEE Electron Device Lett. 35(5), 563–565 (2014).
[Crossref]

C. L. Liao, Y. F. Chang, C. L. Ho, and M. C. Wu, “High-speed GaN-based blue light-emitting diodes with gallium-doped ZnO current spreading layer,” IEEE Electron Device Lett. 34(5), 611–613 (2013).
[Crossref]

Lin, C. H.

C. H. Lin, C. Hsieh, C. G. Tu, Y. Kuo, H. S. Chen, P. Y. Shih, C. H. Liao, Y. W. Kiang, C. C. Yang, C. H. Lai, G. R. He, J. H. Yeh, and T. C. Hsu, “Efficiency improvement of a vertical light-emitting diode through surface plasmon coupling and grating scattering,” Opt. Express 22(S3), A842–A856 (2014), doi:.
[Crossref] [PubMed]

C. H. Lin, C. Y. Su, Y. Kuo, C. H. Chen, Y. F. Yao, P. Y. Shih, H. S. Chen, C. Hsieh, Y. W. Kiang, and C. C. Yang, “Further reduction of efficiency droop effect by adding a lower-index dielectric interlayer in a surface plasmon coupled blue light-emitting diode with surface metal nanoparticles,” Appl. Phys. Lett. 105(10), 101106 (2014).
[Crossref]

Lin, C. L.

J. M. Wun, C. W. Lin, W. Chen, J. K. Sheu, C. L. Lin, Y. L. Li, J. E. Bowers, J. W. Shi, J. Vinogradov, R. Kruglov, and O. Ziemann, “GaN-based miniaturized cyan light-emitting diodes on a patterned sapphire substrate with improved fiber coupling for very high-speed plastic optical fiber communication,” IEEE Photon. J. 4(5), 1520–1529 (2012).
[Crossref]

Lin, C. W.

J. M. Wun, C. W. Lin, W. Chen, J. K. Sheu, C. L. Lin, Y. L. Li, J. E. Bowers, J. W. Shi, J. Vinogradov, R. Kruglov, and O. Ziemann, “GaN-based miniaturized cyan light-emitting diodes on a patterned sapphire substrate with improved fiber coupling for very high-speed plastic optical fiber communication,” IEEE Photon. J. 4(5), 1520–1529 (2012).
[Crossref]

Lin, F. Z.

F. Z. Lin, Y. J. Chiu, and T. H. Wu, “Cladding layer impedance reduction to improve microwave propagation properties in p-i-n waveguides,” IEEE Photon. Technol. Lett. 19(5), 276–278 (2007).
[Crossref]

Lin, G. R.

J. W. Shi, J. K. Sheu, C. H. Chen, G. R. Lin, and W. C. Lai, “High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures,” IEEE Electron Device Lett. 29(2), 158–160 (2008).
[Crossref]

Liu, C.

H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson, “GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses,” Appl. Phys. Lett. 84(13), 2253–2255 (2004).
[Crossref]

Liu, Y.

S. Y. Chou, Y. Liu, W. Khalil, T. Y. Hsiang, and S. Alexandrou, “Ultrafast nanoscale metal-semiconductor-metal photodetectors on bulk and low-temperature grown GaAs,” Appl. Phys. Lett. 61(7), 819–821 (1992).
[Crossref]

Lu, C. F.

Lu, Y. C.

Maaskant, P. P.

P. P. Maaskant, H. Shams, M. Akhter, W. Henry, M. J. Kappers, D. Zhu, C. J. Humphreys, and B. Corbett, “High-speed substrate-emitting micro-light-emitting diodes for applications requiring high radiance,” Appl. Phys. Express 6(2), 022102 (2013).
[Crossref]

Martin, R. W.

H. W. Choi, C. W. Jeon, M. D. Dawson, P. R. Edwards, R. W. Martin, and S. Tripathy, “Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes,” J. Appl. Phys. 93(10), 5978–5982 (2003).
[Crossref]

Massoubre, D.

McConnell, G.

H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson, “GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses,” Appl. Phys. Lett. 84(13), 2253–2255 (2004).
[Crossref]

McKendry, J.

Z. Gong, S. Jin, Y. Chen, J. McKendry, D. Massoubre, I. M. Watson, E. Gu, and M. D. Dawson, “Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes,” J. Appl. Phys. 107(1), 013103 (2010).
[Crossref]

H. X. Zhang, D. Massoubre, J. McKendry, Z. Gong, B. Guilhabert, C. Griffin, E. Gu, P. E. Jessop, J. M. Girkin, and M. D. Dawson, “Individually-addressable flip-chip AlInGaN micropixelated light emitting diode arrays with high continuous and nanosecond output power,” Opt. Express 16(13), 9918–9926 (2008), doi:.
[Crossref] [PubMed]

McKendry, J. J. D.

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

S. Zhang, S. Watson, J. J. D. McKendry, D. Massoubre, A. Cogman, E. Gu, R. K. Henderson, A. E. Kelly, and M. D. Dawson, “1.5 Gbit/s multi-channel visible light communications using CMOS-controlled GaN-based LEDs,” J. Lightwave Technol. 31(8), 1211–1216 (2013).
[Crossref]

J. J. D. McKendry, D. Massoubre, S. Zhang, B. R. Rae, R. P. Green, E. Gu, R. K. Henderson, A. E. Kelly, and M. D. Dawson, “Visible-light communications using a CMOS-controlled micro-light-emitting-diode array,” J. Lightwave Technol. 30(1), 61–67 (2012).
[Crossref]

J. J. D. McKendry, R. P. Green, A. E. Kelly, Z. Gong, B. Guilhabert, D. Massoubre, E. Gu, and M. D. Dawson, “High-speed visible light communications using individual pixels in a micro light-emitting diode array,” IEEE Photon. Technol. Lett. 22(18), 1346–1348 (2010).
[Crossref]

Najda, S. P.

Naka, T.

K. Ikeda, S. Horiuchi, T. Naka, and W. Susaki, “Design parameters of frequency response of GaAs-(Ga,Al)As double heterostructure LED’s for optic communications,” IEEE Transac, Electron Dev. ED-24(7), 1001–1005 (1977).
[Crossref]

Neil, M. A. A.

Z. Gong, H. X. Zhang, E. Gu, C. Griffin, M. D. Dawson, V. Poher, G. Kennedy, P. M. W. French, and M. A. A. Neil, “Matrix-addressable micropixellated InGaN light-emitting diodes with uniform emission and increased light output,” IEEE Transact, Electron Dev. 54(10), 2650–2658 (2007).
[Crossref]

Perlin, P.

Poher, V.

Z. Gong, H. X. Zhang, E. Gu, C. Griffin, M. D. Dawson, V. Poher, G. Kennedy, P. M. W. French, and M. A. A. Neil, “Matrix-addressable micropixellated InGaN light-emitting diodes with uniform emission and increased light output,” IEEE Transact, Electron Dev. 54(10), 2650–2658 (2007).
[Crossref]

Rae, B. R.

Shams, H.

P. P. Maaskant, H. Shams, M. Akhter, W. Henry, M. J. Kappers, D. Zhu, C. J. Humphreys, and B. Corbett, “High-speed substrate-emitting micro-light-emitting diodes for applications requiring high radiance,” Appl. Phys. Express 6(2), 022102 (2013).
[Crossref]

Shen, C. H.

H. S. Chen, C. F. Chen, Y. Kuo, W. H. Chou, C. H. Shen, Y. L. Jung, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupled light-emitting diode with metal protrusions into p-GaN,” Appl. Phys. Lett. 102(4), 041108 (2013).
[Crossref]

Shen, K. C.

Sheu, J. K.

J. M. Wun, C. W. Lin, W. Chen, J. K. Sheu, C. L. Lin, Y. L. Li, J. E. Bowers, J. W. Shi, J. Vinogradov, R. Kruglov, and O. Ziemann, “GaN-based miniaturized cyan light-emitting diodes on a patterned sapphire substrate with improved fiber coupling for very high-speed plastic optical fiber communication,” IEEE Photon. J. 4(5), 1520–1529 (2012).
[Crossref]

J. W. Shi, J. K. Sheu, C. H. Chen, G. R. Lin, and W. C. Lai, “High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures,” IEEE Electron Device Lett. 29(2), 158–160 (2008).
[Crossref]

Shi, J. W.

J. M. Wun, C. W. Lin, W. Chen, J. K. Sheu, C. L. Lin, Y. L. Li, J. E. Bowers, J. W. Shi, J. Vinogradov, R. Kruglov, and O. Ziemann, “GaN-based miniaturized cyan light-emitting diodes on a patterned sapphire substrate with improved fiber coupling for very high-speed plastic optical fiber communication,” IEEE Photon. J. 4(5), 1520–1529 (2012).
[Crossref]

J. W. Shi, J. K. Sheu, C. H. Chen, G. R. Lin, and W. C. Lai, “High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures,” IEEE Electron Device Lett. 29(2), 158–160 (2008).
[Crossref]

Shih, P. Y.

C. H. Lin, C. Hsieh, C. G. Tu, Y. Kuo, H. S. Chen, P. Y. Shih, C. H. Liao, Y. W. Kiang, C. C. Yang, C. H. Lai, G. R. He, J. H. Yeh, and T. C. Hsu, “Efficiency improvement of a vertical light-emitting diode through surface plasmon coupling and grating scattering,” Opt. Express 22(S3), A842–A856 (2014), doi:.
[Crossref] [PubMed]

C. H. Lin, C. Y. Su, Y. Kuo, C. H. Chen, Y. F. Yao, P. Y. Shih, H. S. Chen, C. Hsieh, Y. W. Kiang, and C. C. Yang, “Further reduction of efficiency droop effect by adding a lower-index dielectric interlayer in a surface plasmon coupled blue light-emitting diode with surface metal nanoparticles,” Appl. Phys. Lett. 105(10), 101106 (2014).
[Crossref]

Su, C. Y.

C. H. Lin, C. Y. Su, Y. Kuo, C. H. Chen, Y. F. Yao, P. Y. Shih, H. S. Chen, C. Hsieh, Y. W. Kiang, and C. C. Yang, “Further reduction of efficiency droop effect by adding a lower-index dielectric interlayer in a surface plasmon coupled blue light-emitting diode with surface metal nanoparticles,” Appl. Phys. Lett. 105(10), 101106 (2014).
[Crossref]

H. S. Chen, Y. F. Yao, C. H. Liao, C. G. Tu, C. Y. Su, W. M. Chang, Y. W. Kiang, and C. C. Yang, “Light-emitting device with regularly patterned growth of an InGaN/GaN quantum-well nanorod light-emitting diode array,” Opt. Lett. 38(17), 3370–3373 (2013).
[Crossref] [PubMed]

Susaki, W.

K. Ikeda, S. Horiuchi, T. Naka, and W. Susaki, “Design parameters of frequency response of GaAs-(Ga,Al)As double heterostructure LED’s for optic communications,” IEEE Transac, Electron Dev. ED-24(7), 1001–1005 (1977).
[Crossref]

Tan, M.

Tanaka, S.

Y. Yoshida, S. Tanaka, I. Hiromitsu, Y. Fujita, and K. Yoshino, “Ga-doped ZnO film as a transparent electrode for phthalocyanine/perylene heterojunction solar cell,” Jpn. J. Appl. Phys. 47(2), 867–871 (2008).
[Crossref]

Targowski, G.

Tian, P.

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

Ting, S. Y.

Tripathy, S.

H. W. Choi, C. W. Jeon, M. D. Dawson, P. R. Edwards, R. W. Martin, and S. Tripathy, “Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes,” J. Appl. Phys. 93(10), 5978–5982 (2003).
[Crossref]

Tu, C. G.

Vinogradov, J.

J. M. Wun, C. W. Lin, W. Chen, J. K. Sheu, C. L. Lin, Y. L. Li, J. E. Bowers, J. W. Shi, J. Vinogradov, R. Kruglov, and O. Ziemann, “GaN-based miniaturized cyan light-emitting diodes on a patterned sapphire substrate with improved fiber coupling for very high-speed plastic optical fiber communication,” IEEE Photon. J. 4(5), 1520–1529 (2012).
[Crossref]

Wang, J. Y.

Watson, I. M.

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

Z. Gong, S. Jin, Y. Chen, J. McKendry, D. Massoubre, I. M. Watson, E. Gu, and M. D. Dawson, “Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes,” J. Appl. Phys. 107(1), 013103 (2010).
[Crossref]

H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson, “GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses,” Appl. Phys. Lett. 84(13), 2253–2255 (2004).
[Crossref]

Watson, S.

Wu, C. H.

C. L. Liao, C. L. Ho, Y. F. Chang, C. H. Wu, and M. C. Wu, “High-speed light-emitting diodes emitting at 500 nm with 463-MHz modulation bandwidth,” IEEE Electron Device Lett. 35(5), 563–565 (2014).
[Crossref]

Wu, M. C.

C. L. Liao, C. L. Ho, Y. F. Chang, C. H. Wu, and M. C. Wu, “High-speed light-emitting diodes emitting at 500 nm with 463-MHz modulation bandwidth,” IEEE Electron Device Lett. 35(5), 563–565 (2014).
[Crossref]

C. L. Liao, Y. F. Chang, C. L. Ho, and M. C. Wu, “High-speed GaN-based blue light-emitting diodes with gallium-doped ZnO current spreading layer,” IEEE Electron Device Lett. 34(5), 611–613 (2013).
[Crossref]

Wu, T. H.

F. Z. Lin, Y. J. Chiu, and T. H. Wu, “Cladding layer impedance reduction to improve microwave propagation properties in p-i-n waveguides,” IEEE Photon. Technol. Lett. 19(5), 276–278 (2007).
[Crossref]

Wun, J. M.

J. M. Wun, C. W. Lin, W. Chen, J. K. Sheu, C. L. Lin, Y. L. Li, J. E. Bowers, J. W. Shi, J. Vinogradov, R. Kruglov, and O. Ziemann, “GaN-based miniaturized cyan light-emitting diodes on a patterned sapphire substrate with improved fiber coupling for very high-speed plastic optical fiber communication,” IEEE Photon. J. 4(5), 1520–1529 (2012).
[Crossref]

Wuu, D. S.

Xu, T.

W. Gu, T. Xu, and J. Zhang, “Improved ohmic contact of Ga-doped ZnO to p-GaN by using copper sulfide intermediate layers,” Solid-State Electron. 89, 76–80 (2013).
[Crossref]

Yang, C. C.

C. H. Lin, C. Hsieh, C. G. Tu, Y. Kuo, H. S. Chen, P. Y. Shih, C. H. Liao, Y. W. Kiang, C. C. Yang, C. H. Lai, G. R. He, J. H. Yeh, and T. C. Hsu, “Efficiency improvement of a vertical light-emitting diode through surface plasmon coupling and grating scattering,” Opt. Express 22(S3), A842–A856 (2014), doi:.
[Crossref] [PubMed]

Y. Kuo, H. T. Chen, W. Y. Chang, H. S. Chen, C. C. Yang, and Y. W. Kiang, “Enhancements of the emission and light extraction of a radiating dipole coupled with localized surface plasmon induced on a surface metal nanoparticle in a light-emitting device,” Opt. Express 22(S1), A155–A166 (2014), doi:.
[Crossref] [PubMed]

C. H. Lin, C. Y. Su, Y. Kuo, C. H. Chen, Y. F. Yao, P. Y. Shih, H. S. Chen, C. Hsieh, Y. W. Kiang, and C. C. Yang, “Further reduction of efficiency droop effect by adding a lower-index dielectric interlayer in a surface plasmon coupled blue light-emitting diode with surface metal nanoparticles,” Appl. Phys. Lett. 105(10), 101106 (2014).
[Crossref]

H. S. Chen, Y. F. Yao, C. H. Liao, C. G. Tu, C. Y. Su, W. M. Chang, Y. W. Kiang, and C. C. Yang, “Light-emitting device with regularly patterned growth of an InGaN/GaN quantum-well nanorod light-emitting diode array,” Opt. Lett. 38(17), 3370–3373 (2013).
[Crossref] [PubMed]

H. S. Chen, C. F. Chen, Y. Kuo, W. H. Chou, C. H. Shen, Y. L. Jung, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupled light-emitting diode with metal protrusions into p-GaN,” Appl. Phys. Lett. 102(4), 041108 (2013).
[Crossref]

C. Y. Chen, C. Hsieh, C. H. Liao, W. L. Chung, H. T. Chen, W. Cao, W. M. Chang, H. S. Chen, Y. F. Yao, S. Y. Ting, Y. W. Kiang, C. C. Yang, and X. Hu, “Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode,” Opt. Express 20(10), 11321–11335 (2012), doi:.
[Crossref] [PubMed]

Y. Kuo, S. Y. Ting, C. H. Liao, J. J. Huang, C. Y. Chen, C. Hsieh, Y. C. Lu, C. Y. Chen, K. C. Shen, C. F. Lu, D. M. Yeh, J. Y. Wang, W. H. Chuang, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode,” Opt. Express 19(S4), A914–A929 (2011), doi:.
[Crossref] [PubMed]

Yao, Y. F.

Yeh, D. M.

Yeh, J. H.

Yin, C. Y.

Yoshida, Y.

Y. Yoshida, S. Tanaka, I. Hiromitsu, Y. Fujita, and K. Yoshino, “Ga-doped ZnO film as a transparent electrode for phthalocyanine/perylene heterojunction solar cell,” Jpn. J. Appl. Phys. 47(2), 867–871 (2008).
[Crossref]

Yoshino, K.

Y. Yoshida, S. Tanaka, I. Hiromitsu, Y. Fujita, and K. Yoshino, “Ga-doped ZnO film as a transparent electrode for phthalocyanine/perylene heterojunction solar cell,” Jpn. J. Appl. Phys. 47(2), 867–871 (2008).
[Crossref]

Zhang, H. X.

H. X. Zhang, D. Massoubre, J. McKendry, Z. Gong, B. Guilhabert, C. Griffin, E. Gu, P. E. Jessop, J. M. Girkin, and M. D. Dawson, “Individually-addressable flip-chip AlInGaN micropixelated light emitting diode arrays with high continuous and nanosecond output power,” Opt. Express 16(13), 9918–9926 (2008), doi:.
[Crossref] [PubMed]

Z. Gong, H. X. Zhang, E. Gu, C. Griffin, M. D. Dawson, V. Poher, G. Kennedy, P. M. W. French, and M. A. A. Neil, “Matrix-addressable micropixellated InGaN light-emitting diodes with uniform emission and increased light output,” IEEE Transact, Electron Dev. 54(10), 2650–2658 (2007).
[Crossref]

Zhang, J.

W. Gu, T. Xu, and J. Zhang, “Improved ohmic contact of Ga-doped ZnO to p-GaN by using copper sulfide intermediate layers,” Solid-State Electron. 89, 76–80 (2013).
[Crossref]

Zhang, S.

Zhu, D.

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

P. P. Maaskant, H. Shams, M. Akhter, W. Henry, M. J. Kappers, D. Zhu, C. J. Humphreys, and B. Corbett, “High-speed substrate-emitting micro-light-emitting diodes for applications requiring high radiance,” Appl. Phys. Express 6(2), 022102 (2013).
[Crossref]

Ziemann, O.

J. M. Wun, C. W. Lin, W. Chen, J. K. Sheu, C. L. Lin, Y. L. Li, J. E. Bowers, J. W. Shi, J. Vinogradov, R. Kruglov, and O. Ziemann, “GaN-based miniaturized cyan light-emitting diodes on a patterned sapphire substrate with improved fiber coupling for very high-speed plastic optical fiber communication,” IEEE Photon. J. 4(5), 1520–1529 (2012).
[Crossref]

Appl. Phys. Express (1)

P. P. Maaskant, H. Shams, M. Akhter, W. Henry, M. J. Kappers, D. Zhu, C. J. Humphreys, and B. Corbett, “High-speed substrate-emitting micro-light-emitting diodes for applications requiring high radiance,” Appl. Phys. Express 6(2), 022102 (2013).
[Crossref]

Appl. Phys. Lett. (4)

H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson, “GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses,” Appl. Phys. Lett. 84(13), 2253–2255 (2004).
[Crossref]

H. S. Chen, C. F. Chen, Y. Kuo, W. H. Chou, C. H. Shen, Y. L. Jung, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupled light-emitting diode with metal protrusions into p-GaN,” Appl. Phys. Lett. 102(4), 041108 (2013).
[Crossref]

C. H. Lin, C. Y. Su, Y. Kuo, C. H. Chen, Y. F. Yao, P. Y. Shih, H. S. Chen, C. Hsieh, Y. W. Kiang, and C. C. Yang, “Further reduction of efficiency droop effect by adding a lower-index dielectric interlayer in a surface plasmon coupled blue light-emitting diode with surface metal nanoparticles,” Appl. Phys. Lett. 105(10), 101106 (2014).
[Crossref]

S. Y. Chou, Y. Liu, W. Khalil, T. Y. Hsiang, and S. Alexandrou, “Ultrafast nanoscale metal-semiconductor-metal photodetectors on bulk and low-temperature grown GaAs,” Appl. Phys. Lett. 61(7), 819–821 (1992).
[Crossref]

IEEE Electron Device Lett. (3)

C. L. Liao, Y. F. Chang, C. L. Ho, and M. C. Wu, “High-speed GaN-based blue light-emitting diodes with gallium-doped ZnO current spreading layer,” IEEE Electron Device Lett. 34(5), 611–613 (2013).
[Crossref]

C. L. Liao, C. L. Ho, Y. F. Chang, C. H. Wu, and M. C. Wu, “High-speed light-emitting diodes emitting at 500 nm with 463-MHz modulation bandwidth,” IEEE Electron Device Lett. 35(5), 563–565 (2014).
[Crossref]

J. W. Shi, J. K. Sheu, C. H. Chen, G. R. Lin, and W. C. Lai, “High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures,” IEEE Electron Device Lett. 29(2), 158–160 (2008).
[Crossref]

IEEE Photon. J. (1)

J. M. Wun, C. W. Lin, W. Chen, J. K. Sheu, C. L. Lin, Y. L. Li, J. E. Bowers, J. W. Shi, J. Vinogradov, R. Kruglov, and O. Ziemann, “GaN-based miniaturized cyan light-emitting diodes on a patterned sapphire substrate with improved fiber coupling for very high-speed plastic optical fiber communication,” IEEE Photon. J. 4(5), 1520–1529 (2012).
[Crossref]

IEEE Photon. Technol. Lett. (3)

J. J. D. McKendry, R. P. Green, A. E. Kelly, Z. Gong, B. Guilhabert, D. Massoubre, E. Gu, and M. D. Dawson, “High-speed visible light communications using individual pixels in a micro light-emitting diode array,” IEEE Photon. Technol. Lett. 22(18), 1346–1348 (2010).
[Crossref]

F. Z. Lin, Y. J. Chiu, and T. H. Wu, “Cladding layer impedance reduction to improve microwave propagation properties in p-i-n waveguides,” IEEE Photon. Technol. Lett. 19(5), 276–278 (2007).
[Crossref]

Y. J. Chiu, S. B. Fleischer, and J. E. Bowers, “High-speed low-temperature-grown GaAs p-i-n traveling-wave photodetector,” IEEE Photon. Technol. Lett. 10(7), 1012–1014 (1998).
[Crossref]

IEEE Transac, Electron Dev. (1)

K. Ikeda, S. Horiuchi, T. Naka, and W. Susaki, “Design parameters of frequency response of GaAs-(Ga,Al)As double heterostructure LED’s for optic communications,” IEEE Transac, Electron Dev. ED-24(7), 1001–1005 (1977).
[Crossref]

IEEE Transact, Electron Dev. (1)

Z. Gong, H. X. Zhang, E. Gu, C. Griffin, M. D. Dawson, V. Poher, G. Kennedy, P. M. W. French, and M. A. A. Neil, “Matrix-addressable micropixellated InGaN light-emitting diodes with uniform emission and increased light output,” IEEE Transact, Electron Dev. 54(10), 2650–2658 (2007).
[Crossref]

J. Appl. Phys. (3)

H. W. Choi, C. W. Jeon, M. D. Dawson, P. R. Edwards, R. W. Martin, and S. Tripathy, “Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes,” J. Appl. Phys. 93(10), 5978–5982 (2003).
[Crossref]

Z. Gong, S. Jin, Y. Chen, J. McKendry, D. Massoubre, I. M. Watson, E. Gu, and M. D. Dawson, “Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes,” J. Appl. Phys. 107(1), 013103 (2010).
[Crossref]

P. Tian, J. J. D. McKendry, Z. Gong, S. Zhang, S. Watson, D. Zhu, I. M. Watson, E. Gu, A. E. Kelly, C. J. Humphreys, and M. D. Dawson, “Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates,” J. Appl. Phys. 115(3), 033112 (2014).
[Crossref]

J. Cryst. Growth (1)

H. W. Choi, C. W. Jeon, and M. D. Dawson, “Fabrication of matrix-addressable micro-LED arrays based on a novel etch technique,” J. Cryst. Growth 268(3-4), 527–530 (2004).
[Crossref]

J. Lightwave Technol. (2)

Jpn. J. Appl. Phys. (1)

Y. Yoshida, S. Tanaka, I. Hiromitsu, Y. Fujita, and K. Yoshino, “Ga-doped ZnO film as a transparent electrode for phthalocyanine/perylene heterojunction solar cell,” Jpn. J. Appl. Phys. 47(2), 867–871 (2008).
[Crossref]

Opt. Express (6)

C. Y. Chen, C. Hsieh, C. H. Liao, W. L. Chung, H. T. Chen, W. Cao, W. M. Chang, H. S. Chen, Y. F. Yao, S. Y. Ting, Y. W. Kiang, C. C. Yang, and X. Hu, “Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode,” Opt. Express 20(10), 11321–11335 (2012), doi:.
[Crossref] [PubMed]

R. H. Horng, K. C. Shen, C. Y. Yin, C. Y. Huang, and D. S. Wuu, “High performance of Ga-doped ZnO transparent conductive layers using MOCVD for GaN LED applications,” Opt. Express 21(12), 14452–14457 (2013), doi:.
[Crossref] [PubMed]

Y. Kuo, H. T. Chen, W. Y. Chang, H. S. Chen, C. C. Yang, and Y. W. Kiang, “Enhancements of the emission and light extraction of a radiating dipole coupled with localized surface plasmon induced on a surface metal nanoparticle in a light-emitting device,” Opt. Express 22(S1), A155–A166 (2014), doi:.
[Crossref] [PubMed]

C. H. Lin, C. Hsieh, C. G. Tu, Y. Kuo, H. S. Chen, P. Y. Shih, C. H. Liao, Y. W. Kiang, C. C. Yang, C. H. Lai, G. R. He, J. H. Yeh, and T. C. Hsu, “Efficiency improvement of a vertical light-emitting diode through surface plasmon coupling and grating scattering,” Opt. Express 22(S3), A842–A856 (2014), doi:.
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H. X. Zhang, D. Massoubre, J. McKendry, Z. Gong, B. Guilhabert, C. Griffin, E. Gu, P. E. Jessop, J. M. Girkin, and M. D. Dawson, “Individually-addressable flip-chip AlInGaN micropixelated light emitting diode arrays with high continuous and nanosecond output power,” Opt. Express 16(13), 9918–9926 (2008), doi:.
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Y. Kuo, S. Y. Ting, C. H. Liao, J. J. Huang, C. Y. Chen, C. Hsieh, Y. C. Lu, C. Y. Chen, K. C. Shen, C. F. Lu, D. M. Yeh, J. Y. Wang, W. H. Chuang, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode,” Opt. Express 19(S4), A914–A929 (2011), doi:.
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Opt. Lett. (2)

Solid-State Electron. (1)

W. Gu, T. Xu, and J. Zhang, “Improved ohmic contact of Ga-doped ZnO to p-GaN by using copper sulfide intermediate layers,” Solid-State Electron. 89, 76–80 (2013).
[Crossref]

Other (1)

P. Bhattacharya, Semiconductor Optoelectronic Devices (Prentice Hall International, Inc., 1997).

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Figures (10)

Fig. 1
Fig. 1 Transmission spectra of samples C-300 through C-60. The vertical dashed line indicates the QW emission spectral peak at 476 nm. The inset shows the SEM image of the Ag NPs on the GaZnO DI.
Fig. 2
Fig. 2 TRPL profiles of sample series A, B, and C at room temperature with semi-log scale.
Fig. 3
Fig. 3 (a)-(c): Relations between injected current and applied voltage (I-V curves) of samples A-300 through A-60, B-300 through B-60, and C-300 through C-60, respectively.
Fig. 4
Fig. 4 (a)-(c): Relations between device capacitance and reverse-biased voltage (C-V curves) of samples A-300 through A-60, B-300 through B-60, and C-300 through C-60, respectively.
Fig. 5
Fig. 5 (a)-(c): LED output intensities per mesa area as functions of injected current density of sample series A-C, respectively, by normalizing the results with respect to that of sample B-300 at 333 A/cm2 in current density.
Fig. 6
Fig. 6 (a)-(c): Relative efficiencies as functions of injected current density of sample series A-C, respectively.
Fig. 7
Fig. 7 Setup for the measurement of the modulation bandwidth of an LED.
Fig. 8
Fig. 8 (a)-(c): Modulation responses of samples series A-C, respectively, when the injected current density is fixed at 139 A/cm2.
Fig. 9
Fig. 9 (a)-(c): Modulation responses of samples A-60, B-60 and C-60, respectively, when injected current increases from 10 through 60 mA.
Fig. 10
Fig. 10 Modulation bandwidths as functions of the square-root of injected current density (J) for samples A-60, B-60 and C-60.

Tables (3)

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Table 1 Assignments of samples and their optical characterization results

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Table 2 Characterization results of the LED samples with various mesa sizes

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Table 3 Modulation bandwidths of samples A-60, B-60, and C-60 at various injected current levels

Equations (1)

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t= ( qd/JB ) 1/2 .

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