Abstract

We demonstrate electrically pumped two-section mode locked quantum well lasers emitting at the L-band of telecommunication wavelength on silicon utilizing die to wafer bonding techniques. The mode locked lasers generate pulses at a repetition frequency of 30 GHz with signal to noise ratio above 30 dB and 1 mW average output power per facet. Optical injection-locking scheme was used to improve the noise properties of the pulse trains of passively mode-locked laser. The phases of the mode-locked frequency comb are shown to be coherent with that of the master continuous-wave (CW) laser. The radio-frequency (RF)-line-width is reduced from 7.6 MHz to 150 kHz under CW optical injection. The corresponding pulse-to-pulse jitter and integrated RMS jitter are 29.7 fs/cycle and 1.0 ps, respectively. The experimental results demonstrate that optical injection can reduce the noise properties of the passively mode locked III-V/Si laser in terms of frequency linewidth and timing jitter, which makes the devices attractive for photonic analog-to-digital converters and clock generation and recovery.

© 2015 Optical Society of America

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References

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    [Crossref]

2014 (1)

T. Habruseva, D. Arsenijevic, M. Kleinert, D. Bimberg, G. Huyet, and S. P. Hegarty, “Optimum phase noise reduction and repetition rate tuning in quantum-dot mode-locked lasers,” Appl. Phys. Lett. 104(2), 021112 (2014).
[Crossref]

2013 (2)

2012 (4)

W. Sibbett, A. A. Lagatsky, and C. T. A. Brown, “The development and application of femtosecond laser systems,” Opt. Express 20(7), 6989–7001 (2012).
[Crossref] [PubMed]

R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20(10), 11316–11320 (2012).
[Crossref] [PubMed]

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J. M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP / SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

H. J. Yang, D. Y. Zhao, S. Chuwongin, J. H. Seo, W. Q. Yang, Y. C. Shuai, J. Berggren, M. Hammar, Z. Q. Ma, and W. D. Zhou, “Transfer-printed stacked nanomembrane lasers on silicon,” Nat. Photonics 6(9), 617–620 (2012).
[Crossref]

2011 (2)

H. Y. Liu, T. Wang, Q. Jiang, R. Hogg, F. Tutu, F. Pozzi, and A. Seeds, “Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate,” Nat. Photonics 5(7), 416–419 (2011).
[Crossref]

E. R. H. Fuchs, R. E. Kirchain, and S. Liu, “The future of silicon photonics: Not so fast? Insights from 100G ethernet LAN transceivers,” J. Lightwave Technol. 29(15), 2319–2326 (2011).
[Crossref]

2010 (3)

D. Liang and J. E. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics 4(8), 511–517 (2010).
[Crossref]

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, and G. G. Qin, “A Selective-Area Metal Bonding InGaAsP–Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[Crossref]

N. Rebrova, T. Habruseva, G. Huyet, and S. P. Hegarty, “Stabilization of a passively mode-locked laser by continuous wave optical injection,” Appl. Phys. Lett. 97(10), 101105 (2010).
[Crossref]

2008 (2)

F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]

A. W. Fang, B. R. Koch, K. G. Gan, H. Park, R. Jones, O. Cohen, M. J. Paniccia, D. J. Blumenthal, and J. E. Bowers, “A racetrack mode-locked silicon evanescent laser,” Opt. Express 16(2), 1393–1398 (2008).
[Crossref] [PubMed]

2007 (2)

B. R. Koch, A. W. Fang, O. Cohen, and J. E. Bowers, “Mode-locked silicon evanescent lasers,” Opt. Express 15(18), 11225–11233 (2007).
[Crossref] [PubMed]

E. U. Rafailov, M. A. Cataluna, and W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics 1(7), 395–401 (2007).
[Crossref]

2006 (2)

R. Soref, “The past, present, and future of silicon photonics,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1678–1687 (2006).
[Crossref]

C. Gunn, “CMOS photonics for high-speed interconnects,” IEEE Micro 26(2), 58–66 (2006).
[Crossref]

2002 (1)

C. M. DePriest, T. Yilmaz, A. Braun, J. Abeles, and P. J. Delfyett, “High-quality photonic sampling streams from a semiconductor diode ring laser,” IEEE J. Quantum Electron. 38(4), 380–389 (2002).
[Crossref]

2000 (1)

J. Reichert, M. Niering, R. Holzwarth, M. Weitz, T. Udem, and T. W. Hansch, “Phase coherent vacuum-ultraviolet to radio frequency comparison with a mode-locked laser,” Phys. Rev. Lett. 84(15), 3232–3235 (2000).
[Crossref] [PubMed]

1994 (1)

1992 (1)

D. J. Derickson, R. J. Helkey, A. Mar, J. R. Karin, J. G. Wasserbauer, and J. E. Bowers, “Short pulse generation using multisegment mode-locked semiconductor lasers,” IEEE J. Quantum Electron. 28(10), 2186–2202 (1992).
[Crossref]

1986 (1)

D. von der Linde, “Characterization of the noise in continuously operating mode-locked lasers,” Appl. Phys. B 39(4), 201–217 (1986).
[Crossref]

1973 (1)

B. W. Hakki and T. L. Paoli, “CW degradation at 300 K of GaAs double- heterostructure junction lasers,” J. Appl. Phys. 44(9), 4113–4119 (1973).
[Crossref]

Abeles, J.

C. M. DePriest, T. Yilmaz, A. Braun, J. Abeles, and P. J. Delfyett, “High-quality photonic sampling streams from a semiconductor diode ring laser,” IEEE J. Quantum Electron. 38(4), 380–389 (2002).
[Crossref]

Arsenijevic, D.

T. Habruseva, D. Arsenijevic, M. Kleinert, D. Bimberg, G. Huyet, and S. P. Hegarty, “Optimum phase noise reduction and repetition rate tuning in quantum-dot mode-locked lasers,” Appl. Phys. Lett. 104(2), 021112 (2014).
[Crossref]

Berggren, J.

H. J. Yang, D. Y. Zhao, S. Chuwongin, J. H. Seo, W. Q. Yang, Y. C. Shuai, J. Berggren, M. Hammar, Z. Q. Ma, and W. D. Zhou, “Transfer-printed stacked nanomembrane lasers on silicon,” Nat. Photonics 6(9), 617–620 (2012).
[Crossref]

Bessette, J. T.

Bimberg, D.

T. Habruseva, D. Arsenijevic, M. Kleinert, D. Bimberg, G. Huyet, and S. P. Hegarty, “Optimum phase noise reduction and repetition rate tuning in quantum-dot mode-locked lasers,” Appl. Phys. Lett. 104(2), 021112 (2014).
[Crossref]

Blumenthal, D. J.

Bowers, J. E.

D. Liang and J. E. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics 4(8), 511–517 (2010).
[Crossref]

A. W. Fang, B. R. Koch, K. G. Gan, H. Park, R. Jones, O. Cohen, M. J. Paniccia, D. J. Blumenthal, and J. E. Bowers, “A racetrack mode-locked silicon evanescent laser,” Opt. Express 16(2), 1393–1398 (2008).
[Crossref] [PubMed]

B. R. Koch, A. W. Fang, O. Cohen, and J. E. Bowers, “Mode-locked silicon evanescent lasers,” Opt. Express 15(18), 11225–11233 (2007).
[Crossref] [PubMed]

D. J. Derickson, R. J. Helkey, A. Mar, J. R. Karin, J. G. Wasserbauer, and J. E. Bowers, “Short pulse generation using multisegment mode-locked semiconductor lasers,” IEEE J. Quantum Electron. 28(10), 2186–2202 (1992).
[Crossref]

Braun, A.

C. M. DePriest, T. Yilmaz, A. Braun, J. Abeles, and P. J. Delfyett, “High-quality photonic sampling streams from a semiconductor diode ring laser,” IEEE J. Quantum Electron. 38(4), 380–389 (2002).
[Crossref]

Brown, C. T. A.

Cai, Y.

Calabretta, N.

Camacho-Aguilera, R. E.

Cataluna, M. A.

E. U. Rafailov, M. A. Cataluna, and W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics 1(7), 395–401 (2007).
[Crossref]

Chen, T.

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, and G. G. Qin, “A Selective-Area Metal Bonding InGaAsP–Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[Crossref]

Chen, W. X.

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, and G. G. Qin, “A Selective-Area Metal Bonding InGaAsP–Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[Crossref]

Cheng, Y. B.

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, and G. G. Qin, “A Selective-Area Metal Bonding InGaAsP–Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[Crossref]

Chuwongin, S.

H. J. Yang, D. Y. Zhao, S. Chuwongin, J. H. Seo, W. Q. Yang, Y. C. Shuai, J. Berggren, M. Hammar, Z. Q. Ma, and W. D. Zhou, “Transfer-printed stacked nanomembrane lasers on silicon,” Nat. Photonics 6(9), 617–620 (2012).
[Crossref]

Cohen, O.

de Valicourt, G.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J. M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP / SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

Delfyett, P. J.

C. M. DePriest, T. Yilmaz, A. Braun, J. Abeles, and P. J. Delfyett, “High-quality photonic sampling streams from a semiconductor diode ring laser,” IEEE J. Quantum Electron. 38(4), 380–389 (2002).
[Crossref]

Della Corte, F. G.

F. G. Della Corte and S. Rao, “Use of amorphous silicon for active photonic devices,” IEEE Trans. Electron. Dev. 60(5), 1495–1505 (2013).
[Crossref]

DePriest, C. M.

C. M. DePriest, T. Yilmaz, A. Braun, J. Abeles, and P. J. Delfyett, “High-quality photonic sampling streams from a semiconductor diode ring laser,” IEEE J. Quantum Electron. 38(4), 380–389 (2002).
[Crossref]

Derickson, D. J.

D. J. Derickson, R. J. Helkey, A. Mar, J. R. Karin, J. G. Wasserbauer, and J. E. Bowers, “Short pulse generation using multisegment mode-locked semiconductor lasers,” IEEE J. Quantum Electron. 28(10), 2186–2202 (1992).
[Crossref]

Dorren, H. J. S.

Duan, G. H.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J. M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP / SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

Eisenstein, G.

Fang, A. W.

Fedeli, J. M.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J. M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP / SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

Fuchs, E. R. H.

Gan, K. G.

Gunn, C.

C. Gunn, “CMOS photonics for high-speed interconnects,” IEEE Micro 26(2), 58–66 (2006).
[Crossref]

Habruseva, T.

T. Habruseva, D. Arsenijevic, M. Kleinert, D. Bimberg, G. Huyet, and S. P. Hegarty, “Optimum phase noise reduction and repetition rate tuning in quantum-dot mode-locked lasers,” Appl. Phys. Lett. 104(2), 021112 (2014).
[Crossref]

N. Rebrova, T. Habruseva, G. Huyet, and S. P. Hegarty, “Stabilization of a passively mode-locked laser by continuous wave optical injection,” Appl. Phys. Lett. 97(10), 101105 (2010).
[Crossref]

Hakki, B. W.

B. W. Hakki and T. L. Paoli, “CW degradation at 300 K of GaAs double- heterostructure junction lasers,” J. Appl. Phys. 44(9), 4113–4119 (1973).
[Crossref]

Hammar, M.

H. J. Yang, D. Y. Zhao, S. Chuwongin, J. H. Seo, W. Q. Yang, Y. C. Shuai, J. Berggren, M. Hammar, Z. Q. Ma, and W. D. Zhou, “Transfer-printed stacked nanomembrane lasers on silicon,” Nat. Photonics 6(9), 617–620 (2012).
[Crossref]

Hansch, T. W.

J. Reichert, M. Niering, R. Holzwarth, M. Weitz, T. Udem, and T. W. Hansch, “Phase coherent vacuum-ultraviolet to radio frequency comparison with a mode-locked laser,” Phys. Rev. Lett. 84(15), 3232–3235 (2000).
[Crossref] [PubMed]

Hegarty, S. P.

T. Habruseva, D. Arsenijevic, M. Kleinert, D. Bimberg, G. Huyet, and S. P. Hegarty, “Optimum phase noise reduction and repetition rate tuning in quantum-dot mode-locked lasers,” Appl. Phys. Lett. 104(2), 021112 (2014).
[Crossref]

N. Rebrova, T. Habruseva, G. Huyet, and S. P. Hegarty, “Stabilization of a passively mode-locked laser by continuous wave optical injection,” Appl. Phys. Lett. 97(10), 101105 (2010).
[Crossref]

Helkey, R. J.

D. J. Derickson, R. J. Helkey, A. Mar, J. R. Karin, J. G. Wasserbauer, and J. E. Bowers, “Short pulse generation using multisegment mode-locked semiconductor lasers,” IEEE J. Quantum Electron. 28(10), 2186–2202 (1992).
[Crossref]

Hogg, R.

H. Y. Liu, T. Wang, Q. Jiang, R. Hogg, F. Tutu, F. Pozzi, and A. Seeds, “Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate,” Nat. Photonics 5(7), 416–419 (2011).
[Crossref]

Holzwarth, R.

J. Reichert, M. Niering, R. Holzwarth, M. Weitz, T. Udem, and T. W. Hansch, “Phase coherent vacuum-ultraviolet to radio frequency comparison with a mode-locked laser,” Phys. Rev. Lett. 84(15), 3232–3235 (2000).
[Crossref] [PubMed]

Hong, T.

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, and G. G. Qin, “A Selective-Area Metal Bonding InGaAsP–Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[Crossref]

Huyet, G.

T. Habruseva, D. Arsenijevic, M. Kleinert, D. Bimberg, G. Huyet, and S. P. Hegarty, “Optimum phase noise reduction and repetition rate tuning in quantum-dot mode-locked lasers,” Appl. Phys. Lett. 104(2), 021112 (2014).
[Crossref]

N. Rebrova, T. Habruseva, G. Huyet, and S. P. Hegarty, “Stabilization of a passively mode-locked laser by continuous wave optical injection,” Appl. Phys. Lett. 97(10), 101105 (2010).
[Crossref]

F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]

Jany, C.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J. M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP / SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

Jiang, Q.

H. Y. Liu, T. Wang, Q. Jiang, R. Hogg, F. Tutu, F. Pozzi, and A. Seeds, “Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate,” Nat. Photonics 5(7), 416–419 (2011).
[Crossref]

Jones, R.

Karin, J. R.

D. J. Derickson, R. J. Helkey, A. Mar, J. R. Karin, J. G. Wasserbauer, and J. E. Bowers, “Short pulse generation using multisegment mode-locked semiconductor lasers,” IEEE J. Quantum Electron. 28(10), 2186–2202 (1992).
[Crossref]

Kefelian, F.

F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]

Keyvaninia, S.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J. M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP / SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

Kimerling, L. C.

Kirchain, R. E.

Kleinert, M.

T. Habruseva, D. Arsenijevic, M. Kleinert, D. Bimberg, G. Huyet, and S. P. Hegarty, “Optimum phase noise reduction and repetition rate tuning in quantum-dot mode-locked lasers,” Appl. Phys. Lett. 104(2), 021112 (2014).
[Crossref]

Koch, B. R.

Lagatsky, A. A.

Lamponi, M.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J. M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP / SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

Landais, P.

Latkowski, S.

Lelarge, F.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J. M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP / SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

Liang, D.

D. Liang and J. E. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics 4(8), 511–517 (2010).
[Crossref]

Liang, S.

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, and G. G. Qin, “A Selective-Area Metal Bonding InGaAsP–Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[Crossref]

Liu, H. Y.

H. Y. Liu, T. Wang, Q. Jiang, R. Hogg, F. Tutu, F. Pozzi, and A. Seeds, “Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate,” Nat. Photonics 5(7), 416–419 (2011).
[Crossref]

Liu, S.

Luo, J.

Ma, Z. Q.

H. J. Yang, D. Y. Zhao, S. Chuwongin, J. H. Seo, W. Q. Yang, Y. C. Shuai, J. Berggren, M. Hammar, Z. Q. Ma, and W. D. Zhou, “Transfer-printed stacked nanomembrane lasers on silicon,” Nat. Photonics 6(9), 617–620 (2012).
[Crossref]

Maldonado-Basilio, R.

Mar, A.

D. J. Derickson, R. J. Helkey, A. Mar, J. R. Karin, J. G. Wasserbauer, and J. E. Bowers, “Short pulse generation using multisegment mode-locked semiconductor lasers,” IEEE J. Quantum Electron. 28(10), 2186–2202 (1992).
[Crossref]

Margalit, M.

McInerney, J. G.

F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]

Messaoudene, S.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J. M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP / SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

Michel, J.

Mikhaelshvili, V.

Niering, M.

J. Reichert, M. Niering, R. Holzwarth, M. Weitz, T. Udem, and T. W. Hansch, “Phase coherent vacuum-ultraviolet to radio frequency comparison with a mode-locked laser,” Phys. Rev. Lett. 84(15), 3232–3235 (2000).
[Crossref] [PubMed]

O’Donoghue, S.

F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]

Orenstein, M.

Pan, J. Q.

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, and G. G. Qin, “A Selective-Area Metal Bonding InGaAsP–Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[Crossref]

Paniccia, M. J.

Paoli, T. L.

B. W. Hakki and T. L. Paoli, “CW degradation at 300 K of GaAs double- heterostructure junction lasers,” J. Appl. Phys. 44(9), 4113–4119 (1973).
[Crossref]

Park, H.

Parra-Cetina, J.

Patel, N.

Poingt, F.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J. M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP / SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

Pozzi, F.

H. Y. Liu, T. Wang, Q. Jiang, R. Hogg, F. Tutu, F. Pozzi, and A. Seeds, “Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate,” Nat. Photonics 5(7), 416–419 (2011).
[Crossref]

Qin, G. G.

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, and G. G. Qin, “A Selective-Area Metal Bonding InGaAsP–Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[Crossref]

Rafailov, E. U.

E. U. Rafailov, M. A. Cataluna, and W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics 1(7), 395–401 (2007).
[Crossref]

Ran, G. Z.

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, and G. G. Qin, “A Selective-Area Metal Bonding InGaAsP–Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[Crossref]

Rao, S.

F. G. Della Corte and S. Rao, “Use of amorphous silicon for active photonic devices,” IEEE Trans. Electron. Dev. 60(5), 1495–1505 (2013).
[Crossref]

Rebrova, N.

N. Rebrova, T. Habruseva, G. Huyet, and S. P. Hegarty, “Stabilization of a passively mode-locked laser by continuous wave optical injection,” Appl. Phys. Lett. 97(10), 101105 (2010).
[Crossref]

Reichert, J.

J. Reichert, M. Niering, R. Holzwarth, M. Weitz, T. Udem, and T. W. Hansch, “Phase coherent vacuum-ultraviolet to radio frequency comparison with a mode-locked laser,” Phys. Rev. Lett. 84(15), 3232–3235 (2000).
[Crossref] [PubMed]

Roelkens, G.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J. M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP / SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

Romagnoli, M.

Seeds, A.

H. Y. Liu, T. Wang, Q. Jiang, R. Hogg, F. Tutu, F. Pozzi, and A. Seeds, “Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate,” Nat. Photonics 5(7), 416–419 (2011).
[Crossref]

Seo, J. H.

H. J. Yang, D. Y. Zhao, S. Chuwongin, J. H. Seo, W. Q. Yang, Y. C. Shuai, J. Berggren, M. Hammar, Z. Q. Ma, and W. D. Zhou, “Transfer-printed stacked nanomembrane lasers on silicon,” Nat. Photonics 6(9), 617–620 (2012).
[Crossref]

Shuai, Y. C.

H. J. Yang, D. Y. Zhao, S. Chuwongin, J. H. Seo, W. Q. Yang, Y. C. Shuai, J. Berggren, M. Hammar, Z. Q. Ma, and W. D. Zhou, “Transfer-printed stacked nanomembrane lasers on silicon,” Nat. Photonics 6(9), 617–620 (2012).
[Crossref]

Sibbett, W.

W. Sibbett, A. A. Lagatsky, and C. T. A. Brown, “The development and application of femtosecond laser systems,” Opt. Express 20(7), 6989–7001 (2012).
[Crossref] [PubMed]

E. U. Rafailov, M. A. Cataluna, and W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics 1(7), 395–401 (2007).
[Crossref]

Soref, R.

R. Soref, “The past, present, and future of silicon photonics,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1678–1687 (2006).
[Crossref]

Todaro, M. T.

F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]

Tutu, F.

H. Y. Liu, T. Wang, Q. Jiang, R. Hogg, F. Tutu, F. Pozzi, and A. Seeds, “Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate,” Nat. Photonics 5(7), 416–419 (2011).
[Crossref]

Udem, T.

J. Reichert, M. Niering, R. Holzwarth, M. Weitz, T. Udem, and T. W. Hansch, “Phase coherent vacuum-ultraviolet to radio frequency comparison with a mode-locked laser,” Phys. Rev. Lett. 84(15), 3232–3235 (2000).
[Crossref] [PubMed]

Van Thourhout, D.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J. M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP / SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

von der Linde, D.

D. von der Linde, “Characterization of the noise in continuously operating mode-locked lasers,” Appl. Phys. B 39(4), 201–217 (1986).
[Crossref]

Wang, T.

H. Y. Liu, T. Wang, Q. Jiang, R. Hogg, F. Tutu, F. Pozzi, and A. Seeds, “Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate,” Nat. Photonics 5(7), 416–419 (2011).
[Crossref]

Wang, W.

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, and G. G. Qin, “A Selective-Area Metal Bonding InGaAsP–Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[Crossref]

Wang, Y.

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, and G. G. Qin, “A Selective-Area Metal Bonding InGaAsP–Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[Crossref]

Wasserbauer, J. G.

D. J. Derickson, R. J. Helkey, A. Mar, J. R. Karin, J. G. Wasserbauer, and J. E. Bowers, “Short pulse generation using multisegment mode-locked semiconductor lasers,” IEEE J. Quantum Electron. 28(10), 2186–2202 (1992).
[Crossref]

Weitz, M.

J. Reichert, M. Niering, R. Holzwarth, M. Weitz, T. Udem, and T. W. Hansch, “Phase coherent vacuum-ultraviolet to radio frequency comparison with a mode-locked laser,” Phys. Rev. Lett. 84(15), 3232–3235 (2000).
[Crossref] [PubMed]

Yang, H. J.

H. J. Yang, D. Y. Zhao, S. Chuwongin, J. H. Seo, W. Q. Yang, Y. C. Shuai, J. Berggren, M. Hammar, Z. Q. Ma, and W. D. Zhou, “Transfer-printed stacked nanomembrane lasers on silicon,” Nat. Photonics 6(9), 617–620 (2012).
[Crossref]

Yang, W. Q.

H. J. Yang, D. Y. Zhao, S. Chuwongin, J. H. Seo, W. Q. Yang, Y. C. Shuai, J. Berggren, M. Hammar, Z. Q. Ma, and W. D. Zhou, “Transfer-printed stacked nanomembrane lasers on silicon,” Nat. Photonics 6(9), 617–620 (2012).
[Crossref]

Yilmaz, T.

C. M. DePriest, T. Yilmaz, A. Braun, J. Abeles, and P. J. Delfyett, “High-quality photonic sampling streams from a semiconductor diode ring laser,” IEEE J. Quantum Electron. 38(4), 380–389 (2002).
[Crossref]

Yin, L. Q.

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, and G. G. Qin, “A Selective-Area Metal Bonding InGaAsP–Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[Crossref]

Zhang, J. H.

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, and G. G. Qin, “A Selective-Area Metal Bonding InGaAsP–Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[Crossref]

Zhao, D. Y.

H. J. Yang, D. Y. Zhao, S. Chuwongin, J. H. Seo, W. Q. Yang, Y. C. Shuai, J. Berggren, M. Hammar, Z. Q. Ma, and W. D. Zhou, “Transfer-printed stacked nanomembrane lasers on silicon,” Nat. Photonics 6(9), 617–620 (2012).
[Crossref]

Zhao, L. J.

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, and G. G. Qin, “A Selective-Area Metal Bonding InGaAsP–Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[Crossref]

Zhou, W. D.

H. J. Yang, D. Y. Zhao, S. Chuwongin, J. H. Seo, W. Q. Yang, Y. C. Shuai, J. Berggren, M. Hammar, Z. Q. Ma, and W. D. Zhou, “Transfer-printed stacked nanomembrane lasers on silicon,” Nat. Photonics 6(9), 617–620 (2012).
[Crossref]

Appl. Phys. B (1)

D. von der Linde, “Characterization of the noise in continuously operating mode-locked lasers,” Appl. Phys. B 39(4), 201–217 (1986).
[Crossref]

Appl. Phys. Lett. (2)

N. Rebrova, T. Habruseva, G. Huyet, and S. P. Hegarty, “Stabilization of a passively mode-locked laser by continuous wave optical injection,” Appl. Phys. Lett. 97(10), 101105 (2010).
[Crossref]

T. Habruseva, D. Arsenijevic, M. Kleinert, D. Bimberg, G. Huyet, and S. P. Hegarty, “Optimum phase noise reduction and repetition rate tuning in quantum-dot mode-locked lasers,” Appl. Phys. Lett. 104(2), 021112 (2014).
[Crossref]

IEEE J. Quantum Electron. (2)

C. M. DePriest, T. Yilmaz, A. Braun, J. Abeles, and P. J. Delfyett, “High-quality photonic sampling streams from a semiconductor diode ring laser,” IEEE J. Quantum Electron. 38(4), 380–389 (2002).
[Crossref]

D. J. Derickson, R. J. Helkey, A. Mar, J. R. Karin, J. G. Wasserbauer, and J. E. Bowers, “Short pulse generation using multisegment mode-locked semiconductor lasers,” IEEE J. Quantum Electron. 28(10), 2186–2202 (1992).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

R. Soref, “The past, present, and future of silicon photonics,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1678–1687 (2006).
[Crossref]

IEEE Micro (1)

C. Gunn, “CMOS photonics for high-speed interconnects,” IEEE Micro 26(2), 58–66 (2006).
[Crossref]

IEEE Photon. Technol. Lett. (3)

T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, and G. G. Qin, “A Selective-Area Metal Bonding InGaAsP–Si Laser,” IEEE Photon. Technol. Lett. 22(15), 1141–1143 (2010).
[Crossref]

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J. M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP / SOI lasers with a double adiabatic taper coupler,” IEEE Photon. Technol. Lett. 24(1), 76–78 (2012).
[Crossref]

F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]

IEEE Trans. Electron. Dev. (1)

F. G. Della Corte and S. Rao, “Use of amorphous silicon for active photonic devices,” IEEE Trans. Electron. Dev. 60(5), 1495–1505 (2013).
[Crossref]

J. Appl. Phys. (1)

B. W. Hakki and T. L. Paoli, “CW degradation at 300 K of GaAs double- heterostructure junction lasers,” J. Appl. Phys. 44(9), 4113–4119 (1973).
[Crossref]

J. Lightwave Technol. (1)

Nat. Photonics (4)

E. U. Rafailov, M. A. Cataluna, and W. Sibbett, “Mode-locked quantum-dot lasers,” Nat. Photonics 1(7), 395–401 (2007).
[Crossref]

H. J. Yang, D. Y. Zhao, S. Chuwongin, J. H. Seo, W. Q. Yang, Y. C. Shuai, J. Berggren, M. Hammar, Z. Q. Ma, and W. D. Zhou, “Transfer-printed stacked nanomembrane lasers on silicon,” Nat. Photonics 6(9), 617–620 (2012).
[Crossref]

H. Y. Liu, T. Wang, Q. Jiang, R. Hogg, F. Tutu, F. Pozzi, and A. Seeds, “Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate,” Nat. Photonics 5(7), 416–419 (2011).
[Crossref]

D. Liang and J. E. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics 4(8), 511–517 (2010).
[Crossref]

Opt. Express (4)

Opt. Lett. (2)

Phys. Rev. Lett. (1)

J. Reichert, M. Niering, R. Holzwarth, M. Weitz, T. Udem, and T. W. Hansch, “Phase coherent vacuum-ultraviolet to radio frequency comparison with a mode-locked laser,” Phys. Rev. Lett. 84(15), 3232–3235 (2000).
[Crossref] [PubMed]

Other (1)

M. L. Davenport, Srinivasan, M. J. R. Heck, and J. E. Bowers, “A hybrid silicon/InP integrated all-passive feedback stabilized mode-locked laser,” Optical Fiber Communication Conference and Exposition (OFC)/National Fiber Optic Engineers Conference (NFOEC), Th3A.5 (2014).
[Crossref]

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Figures (6)

Fig. 1
Fig. 1 (a) Diagram of the III-V/silicon MLL, (b) measured output power versus gain current where the SA is electrically open.
Fig. 2
Fig. 2 (a) Optical spectra of the III-V/silicon MLL at different injection currents to the gain section while the SA section is floating, (b) the magnify image of the ASE spectrum of the device in the long wavelength range at the injection current of 80 mA.
Fig. 3
Fig. 3 (a) Measured RF spectrum of the III-V/Si MLL at Igain of 120 mA and unbiasing the SA section. The RBW during measurement is 3 MHz. (b) measured RF spectrum (solid line/black) and its Lorentzian fit (dotted line/red) of the III-V/Si MLL at a frequency span of 100 MHz.
Fig. 4
Fig. 4 Experimental setup for optical injection locking of the III-V/silicon MLL.
Fig. 5
Fig. 5 (a) Optical spectrum of the III-V/silicon MLL under CW optical injection with injection optical power of −1.5 dBm at 1608.4 nm,(b) measured RF spectrum of the free running (dashed line/black) and CW optically injected (solid line/red) III-V/Si MLL at Igain of 120 mA, (c) measured RF spectrum (dotted line/red) and its Lorentzian fit (solid line/blue) of CW optical injected III-V/Si MLL at a frequency span of 20 MHz.
Fig. 6
Fig. 6 Measured single sideband phase noise traces of the free running (dotted dash/black) and CW optical injected III-V/silicon MLL (solid line/red).

Equations (2)

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   σ RMS = 1 2πf 2 f min f max L(f)df
σ pp = ν/2π f 3

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